Power semiconductor device with non-rectangular semiconductor die for enhanced mechanical robustness and reduced stress concentration and electric field concentration
By adopting non-rectangular semiconductor dies and non-traditional dicing technology, the problem of poor mechanical robustness of power semiconductor devices caused by stress and electric field concentration in high-power applications is solved, and the reliability and performance of the devices are improved.
Patent Information
- Application Number
- CN202480011777.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-02-09
- Filing Date
- 2024-01-17
- Publication Date
- 2025-09-16
AI Technical Summary
Existing power semiconductor devices are prone to stress concentration and electric field concentration caused by thermal cycling and physical stress in high-power applications, resulting in poor mechanical robustness and prone to cracks and failures.
Semiconductor tube cores with non-rectangular shapes, such as hexagonal or polygonal shapes, are designed with rounded or chamfered corners and formed through non-traditional scribing technologies such as plasma scribing and laser ablation to reduce thermal stress and electric field concentration.
It improves the mechanical robustness of the device, reduces stress concentration and electric field concentration, reduces the risk of failure, and improves the reliability and performance of the device.