Air inlet structure for thin film deposition equipment and thin film deposition equipment

By designing an intake structure with N gas channels and N-1 uniform gas channels in the thin film deposition equipment, the problem of reaction gases meeting and reacting in the intake channels is solved, and the quality and uniformity of the film are improved.

CN120666315APending Publication Date: 2025-09-19JIANGSU MICROVIA NANO EQUIP TECH CO LTD
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Patent Information

Application Number
CN202510781878.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-06-11
Publication Date
2025-09-19

AI Technical Summary

Technical Problem

In existing thin film deposition equipment, reactant gases meet and react in the air inlet channel, generating impurity particles that affect the quality of the film.

Method used

An air intake structure is adopted, which is equipped with N gas channels and N-1 uniform air channels. The first air intake channel is located at the central axis position, and each second air intake channel is connected to the uniform air channel one by one. A gas separation channel is provided on one side of the uniform air channel to prevent the reaction gases from meeting and flowing into each other, and the gas is evenly separated through the uniform air channel.

Benefits of technology

The generation of impurity particles is reduced, and the uniformity of film quality and thickness is improved.

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Abstract

The invention relates to the technical field of semiconductor preparation, and discloses a gas inlet structure for thin film deposition equipment, N gas channels and N-1 gas uniformizing channels are arranged in the gas inlet structure, the N gas channels are composed of one first gas inlet channel and N-1 second gas inlet channels, and N is a positive integer larger than or equal to 2; the first air inlet channel is located at the position of the center axis of the air inlet structure, the second air inlet channels communicate with the air uniformizing channels in a one-to-one correspondence mode, and a plurality of air distributing channels which are evenly distributed along the center axis of the air inlet structure at intervals are arranged on the sides, opposite to the second air inlet channels, of the air uniformizing channels. Therefore, by changing the gas inlet paths of different reaction gases, the possibility that the two reaction gases meet to react and flow into each other is reduced, the generation of impurity particles is reduced, and the film quality is improved. The invention further discloses thin film deposition equipment.
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Description

Technical Field

[0001] The present application relates to the field of semiconductor preparation technology, and in particular to an air intake structure for a thin film deposition device and a thin film deposition device. Background Art

[0002] Currently, atomic layer deposition (ALD) technology can introduce two or more reaction gases into the reaction chamber separately, so that each reaction gas undergoes a fully saturated surface chemical reaction on the substrate surface and is deposited on the substrate surface in the form of a single atomic film.

[0003] Atomic layer deposition equipment generally delivers gas to the coating chamber through a spray structure. Among them, most spray structures are provided with two gas paths, which are separated at the air inlet of the air inlet structure. For example, a thin film deposition device provided in the related art includes a vacuum chamber, a spray structure is provided above the vacuum chamber, a top plate is provided above the spray structure, the air inlet structure is located above the top plate, the air inlet structure is provided with two air inlets, and the base supporting the wafer is located in the vacuum chamber and below the air outlet of the spray structure. In the process of depositing the thin film, the first reaction gas is blown in through one of the air inlets of the air inlet structure, purged with an inert gas, and then the second reaction gas is blown in through the other air inlet of the air inlet structure, and then purged with an inert gas, and so on.

[0004] During the implementation of the embodiments of the present disclosure, it was found that at least the following problems exist in the related art:

[0005] When the above-mentioned air intake structure is used, the first reaction gas and the second reaction gas may meet and react in the air intake channel, or even the two reaction gases may flow into each other at the air intake and react, thereby generating impurity particles. The impurity particles enter the vacuum chamber along with the reaction gases, thereby affecting the quality of the film.

[0006] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of this application, and therefore may include information that does not constitute prior art known to ordinary technicians in this field. Summary of the Invention

[0007] In order to provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. The summary is not an extensive review, nor is it intended to identify key / critical elements or delineate the scope of protection of these embodiments, but rather serves as a prelude to the detailed description that follows.

[0008] The embodiments of the present disclosure provide an air intake structure and a thin film deposition device for thin film deposition equipment, which changes the air intake paths of different reaction gases, thereby reducing the possibility of two reaction gases meeting and reacting and flowing into each other, thereby reducing the generation of impurity particles and improving the quality of the film.

[0009] In some embodiments, the air intake structure for thin film deposition equipment is provided with N gas channels and N-1 uniform air channels in the air intake structure, and the N gas channels are composed of 1 first air intake channel and N-1 second air intake channels, wherein N is a positive integer greater than or equal to 2; the first air intake channel is located at the central axis position of the air intake structure, and each second air intake channel is connected to each uniform air channel in a one-to-one correspondence, and a plurality of gas distribution channels are provided on the side of the uniform air channel relative to the second air intake channel, which are evenly spaced along the central axis of the air intake structure.

[0010] Optionally, the gas uniformity channels are arranged at intervals in the longitudinal direction.

[0011] Optionally, the gas uniformity channel is a horizontally placed annular space.

[0012] Optionally, the air uniformity channel is used as a boundary to separate the air into N-1 detachably connected air intake modules.

[0013] Optionally, the air intake modules are detachably connected via a first side connection structure and a second side connection structure.

[0014] Optionally, the air intake modules are sealed.

[0015] Optionally, the air intake module has a first surface, a second surface and a third surface located therebetween; wherein, the first surface or the third surface of the air intake module is provided with an air inlet corresponding to the first air intake channel and the second air intake channel, and is used to be connected to the gas delivery component; the second surface of the air intake module is provided with an air outlet corresponding to the first air intake channel and the air distribution channel, and is used to be connected to the spray component.

[0016] Optionally, the air intake module for connecting to the air delivery assembly includes a module body and a cover plate arranged on the top of the module body; wherein the cover plate covers the top of the module body to form an air uniformity channel.

[0017] Optionally, in the air intake module connected to the spray assembly, the air outlet of the first air intake channel is located at the center of the second surface, and the air outlets of the plurality of air distribution channels are evenly spaced around the center of the second surface.

[0018] In some embodiments, the thin film deposition equipment includes: a reaction chamber; a spray assembly, arranged in the reaction chamber; a gas delivery assembly, and an air intake structure for the thin film deposition equipment as described in the aforementioned embodiment is arranged between the gas delivery assembly and the spray assembly; the gas delivery assembly and the spray assembly are connected through the air intake structure.

[0019] The air intake structure for a thin film deposition device and the thin film deposition device provided in the embodiments of the present disclosure can achieve the following technical effects:

[0020] The air intake structure is equipped with N gas channels and N-1 uniform air channels. These N gas channels consist of one first air intake channel and N-1 second air intake channels. The first air intake channel is located at the central axis of the air intake structure, and each second air intake channel is connected to a uniform air channel in a one-to-one correspondence. This allows the reactant gases to enter the spray assembly through the first and second air intake channels, preventing the reactant gases in the gas channels from interacting and reacting. Furthermore, before different reactant gases enter the spray assembly, they are prevented from flowing into each other, thereby reducing the generation of impurity particles and improving film quality.

[0021] On this basis, a plurality of gas distribution channels are evenly spaced along the central axis of the gas inlet structure on the side of the gas uniformity channel opposite to the second gas inlet channel. In this way, the reaction gas can be evenly distributed, thereby ensuring the uniformity of the reaction gas and further improving the uniformity of the film thickness.

[0022] The above general description and the following description are exemplary and explanatory only and are not intended to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] One or more embodiments are exemplarily described by corresponding drawings. These exemplary descriptions and drawings do not limit the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. The drawings do not constitute a scale limitation. In addition,

[0024] Figure 1 It is a structural schematic diagram of a thin film deposition device in the prior art;

[0025] Figure 2 is a structural schematic diagram of an air intake structure provided by an embodiment of the present disclosure;

[0026] Figure 3 This is a cross-sectional diagram of an air intake structure provided by an embodiment of the present disclosure. Figure 1 ;

[0027] Figure 4 This is a cross-sectional diagram of an air intake structure provided by an embodiment of the present disclosure. Figure 2 ;

[0028] Figure 5 is a structural schematic diagram of a top plate provided by an embodiment of the present disclosure;

[0029] Figure 6 This is a schematic structural diagram of two gas modules connected together according to an embodiment of the present disclosure;

[0030] Figure 7 is a structural schematic diagram of another top plate provided by an embodiment of the present disclosure;

[0031] Figure 8 is a front view of another air intake structure provided by an embodiment of the present disclosure;

[0032] Figure 9 is a top view of another air intake structure provided by an embodiment of the present disclosure;

[0033] Figure 10 yes Figure 9 Schematic diagram of the cross section at AA in the middle;

[0034] Figure 11 yes Figure 9 Schematic diagram of the cross section at the middle BB;

[0035] Figure 12 yes Figure 9 Schematic cross-section at CC;

[0036] Figure 13 is a simplified structural diagram of an air intake structure provided by an embodiment of the present disclosure;

[0037] Figure 14 is a simplified structural diagram of another air intake structure provided by an embodiment of the present disclosure;

[0038] Figure 15 It is a simplified structural diagram of another air intake structure provided by an embodiment of the present disclosure.

[0039] Reference numerals:

[0040] 1: Air inlet block; 1a: Air inlet channel; 1b: First air inlet; 1c: Second air inlet; 2: Spray structure; 3: Heating plate; 4: Reaction chamber; 5: Wafer;

[0041] 10: gas module; 11: first surface; 12: second surface; 13: third surface; 14: module body; 141: cover; 15: sealing ring; 16: air inlet area; 17: air outlet area;

[0042] 20: gas channel; 21: first air inlet channel; 22: second air inlet channel;

[0043] 30: gas uniformity channel; 31: gas separation channel;

[0044] 100: spray assembly; 101: top plate; 102: interface area; 1021: first interface area; 1022: second interface area; 1023: third interface area; 103: spray plate. DETAILED DESCRIPTION

[0045] In order to be able to understand the features and technical content of the embodiments of the present disclosure in more detail, the implementation of the embodiments of the present disclosure is described in detail below in conjunction with the accompanying drawings. The accompanying drawings are for reference only and are not used to limit the embodiments of the present disclosure. In the following technical description, for the sake of convenience of explanation, a full understanding of the disclosed embodiments is provided through multiple details. However, one or more embodiments can still be implemented without these details. In other cases, to simplify the drawings, well-known structures and devices can be simplified for display.

[0046] In the description and claims of the embodiments of the present disclosure, as well as in the accompanying drawings, the terms "first," "second," and the like are used to distinguish similar items and are not necessarily used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate to describe the embodiments of the present disclosure herein. In addition, the terms "including," "having," and any variations thereof are intended to cover non-exclusive inclusions.

[0047] In the embodiments of the present disclosure, the terms "upper", "lower", "inside", "middle", "outside", "front", "back" and the like indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings. These terms are mainly intended to better describe the embodiments of the present disclosure and their embodiments, and are not intended to limit the indicated devices, elements or components to having a specific direction, or to be constructed and operated in a specific direction. Moreover, in addition to being used to indicate directions or positional relationships, some of the above terms may also be used to indicate other meanings. For example, the term "upper" may also be used to indicate a certain dependency or connection relationship in certain circumstances. For those of ordinary skill in the art, the specific meanings of these terms in the embodiments of the present disclosure can be understood according to specific circumstances.

[0048] Furthermore, the terms "disposed," "connected," and "fixed" should be interpreted broadly. For example, "connected" can mean a fixed connection, a removable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be a direct connection, an indirect connection through an intermediary, or an internal connection between two devices, elements, or components. Those skilled in the art will understand the specific meanings of these terms in the embodiments of this disclosure based on the specific circumstances.

[0049] Unless otherwise stated, the term "plurality" means two or more.

[0050] In the embodiment of the present disclosure, the character " / " indicates that the preceding and following objects are in an "or" relationship. For example, A / B means: A or B.

[0051] The term "and / or" describes an association between objects, indicating that three relationships can exist. For example, A and / or B means: A or B, or A and B.

[0052] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0053] Currently, traditional thin film deposition technologies, including physical vapor deposition (PVD) and chemical vapor deposition (CVD), are unable to effectively and precisely control film properties in key production steps and meet increasingly stringent process requirements. This is where ALD's unique capabilities come into play, such as its ability to form high-quality, pinhole-free, conformal films on complex, non-planar and three-dimensional structures.

[0054] Currently, atomic layer deposition (ALD), one of the most advanced thin-film deposition technologies, is widely used in advanced microelectronics, display, MEMS, sensor, photovoltaic cell, and other manufacturing industries. With the continuous development of modern science and technology, its applications will continue to grow in the near future.

[0055] In the related art, the structure of the thin film deposition equipment is as follows Figure 1 As shown, it includes a reaction chamber 4, in which a heating plate 3 is arranged. The heating plate 3 is used to carry a wafer 5. A spray structure 2 is arranged above the wafer 5, and an air inlet block 1 is arranged on the spray structure 2.

[0056] The inlet block 1 has an inlet channel 1a within it and a first inlet port 1b and a second inlet port 1c on its surface that communicate with the inlet channel 1a. During pre-treatment and coating of wafers 5, the first reactant gas is first blown into the inlet channel 1a through the first inlet port 1b and purged with an inert gas. Then, the second reactant gas is blown into the inlet channel 1a through the second inlet port 1c and purged with an inert gas. This process is repeated.

[0057] Here, although the inert gas purge can expel most of the reaction gas from the inlet channel 1a, some reaction gas still remains in the inlet channel 1a. Thus, after the first reaction gas or the second reaction gas is blown in, a reaction occurs, thereby generating impurity particles. Simultaneously, the first reaction gas blown in from the first inlet 1b may also flow into the second inlet 1c, and the first reaction gas blown in from the second inlet 1c may also flow into the second inlet 1c. This causes the two reaction gases to react at the inlets, generating impurity particles. These impurity particles then enter the reaction chamber 4 along with the reaction gas or inert gas, thereby affecting the film quality.

[0058] In order to overcome the above technical problems, the embodiment of the present disclosure provides an air intake structure for thin film deposition equipment, which changes the air intake paths of different reaction gases, thereby reducing the possibility of the two reaction gases meeting and reacting and flowing into each other, thereby reducing the generation of impurity particles and improving the quality of the film.

[0059] The following is combined with Figures 2 to 15 The structure, function and implementation process of the air intake structure provided in this embodiment are illustrated by examples.

[0060] Combine Figures 2 to 4 As shown, an embodiment of the present disclosure provides an air intake structure for a thin film deposition device, wherein N gas channels 20 and N-1 uniform air channels 30 are provided in the air intake structure, and the N gas channels 20 are composed of 1 first air intake channel 21 and N-1 second air intake channels 22, wherein N is a positive integer greater than or equal to 2; the first air intake channel 21 is located at the central axis position of the air intake structure, and each second air intake channel 22 is connected to each uniform air channel 30 in a one-to-one correspondence, and a plurality of gas distribution channels 31 are provided on the side of the uniform air channel 30 relative to the second air intake channel 22, which are evenly spaced along the central axis of the air intake structure.

[0061] The air intake structure for thin film deposition equipment provided by the embodiment of the present disclosure is provided with N gas channels 20 and N-1 uniform air channels 30. The N gas channels 20 are composed of a first air intake channel 21 and N-1 second air intake channels 22. The first air intake channel 21 is located at the central axis of the air intake structure, and each second air intake channel 22 is connected to each uniform air channel 30 in a one-to-one correspondence. In this way, the reaction gas can enter the spray assembly through the first air intake channel 21 and the second air intake channel 22 respectively, preventing the reaction gases in the gas channels from meeting and reacting. At the same time, before different reaction gases enter the spray assembly, they are prevented from flowing into each other, thereby reducing the generation of impurity particles and improving the quality of the film.

[0062] On this basis, a plurality of gas distribution channels 31 are provided on the side of the gas uniformity channel 30 opposite to the second gas inlet channel 22. These channels are evenly spaced along the central axis of the gas inlet structure. This allows the reaction gas to be evenly distributed, thereby ensuring the uniformity of the reaction gas and improving the uniformity of the film thickness.

[0063] In this embodiment, the gas delivery assembly is used to deliver one or more reactant gases to the spray assembly 100. For example, when two reactant gases are input, the first reactant gas includes TiCl4, TMA, or NH3; the second reactant gas includes H2O or TiN. The inert gas includes nitrogen. The inert gas can be used for purging or as a carrier gas, carrying the first or second reactant gas through the gas channel 20 and the gas uniformity channel 30 of the air inlet structure and into the spray assembly 100.

[0064] In this embodiment, the number of gas channels 20 can be determined based on the number of gas inlets. Here, the number of gas inlets is N, the number of gas channels 20 is N, and the number of gas uniformity channels 30 is N-1, where N is a positive integer greater than or equal to 2. This allows for more gas flow.

[0065] Optionally, if the number of air inlets is 2, the number of gas channels 20 required is 2, and the number of gas uniformity channels 30 is 1; alternatively, if the number of air inlets is 3, the number of gas channels 20 required is 3, and the number of gas uniformity channels 30 is 2; alternatively, if the number of air inlets is 4, the number of gas channels 20 required is 4, and the number of gas uniformity channels 30 is 3. The number can be selected according to the actual application scenario, and the number is not limited.

[0066] In this embodiment, the N gas channels 20 are composed of one first gas inlet channel 21 and N-1 second gas inlet channels 22. That is, the total number of the first gas inlet channel 21 and the second gas inlet channel 22 is N. Structurally, the first gas inlet channel 21 is located at the central axis of the gas inlet structure, and the second gas inlet channel 22 is connected to the uniform gas channel 30. Here, the number of second gas inlet channels 22 is the same as the number of uniform gas channels 30. At the same time, the gas channel 20 and the uniform gas channel 30 are isolated from each other, and the first gas inlet channel 21 and the second gas inlet channel 22 of the gas channel 20 are isolated from each other. In this way, different reaction gases can be completely prevented from meeting each other in the gas inlet structure, thereby preventing cross-gas from contaminating the entire reaction system and wafers.

[0067] In this embodiment, in order to further ensure the uniformity of the gas passing through the gas channel 20, a plurality of gas distribution channels 31 are provided on the side of the gas distribution channel 30 relative to the second gas inlet channel 22, which are evenly spaced along the central axis of the gas inlet structure. The gas in the gas distribution channel 30 is evenly distributed through the gas distribution channels 31 and finally flows into the spray assembly 100.

[0068] In some embodiments, the air-leveling channels 30 are spaced apart longitudinally. When there are two or more air-leveling channels 30, adjacent air-leveling channels 30 may need to be separated. This facilitates separation of the air-leveling channels 30 and facilitates connection of the second air inlet channel 22 and the plurality of air distribution channels 31 to the air-leveling channels 30.

[0069] In some embodiments, the reaction gas in the second air inlet channel 22 can enter the gas uniformity channel 30 for uniformity and then enter the corresponding gas separation channels 31. In order to enable the gas uniformity channel 30 to perform uniform gas separation, the gas uniformity channel 30 is set as a horizontal annular space.

[0070] Here, the second air inlet passage 22 is communicated with the middle portion of the annular space, and a plurality of air distribution passages 31 are respectively connected in the circumferential direction of the annular space.

[0071] In some embodiments, when there are two or more uniform air channels 30, the air intake structure is divided into N-1 detachably connected air intake modules 10, with the uniform air channels 30 as the boundary. In this way, the number of air intake modules 10 can be flexibly adjusted according to the number of uniform air channels 30, thereby facilitating the free spatial arrangement of the air intake modules 10 to adapt to more usage scenarios and further improve its scalability.

[0072] In this embodiment, the air intake structure is modularly designed, and a detachably connected gas module 10 is provided. The gas module 10 may be a block structure.

[0073] Optionally, in this embodiment, the cross-sectional shape of the gas module 10 includes a regular geometric shape, an irregular geometric shape, or a shape composed of multiple geometric shapes.

[0074] Optionally, the regular geometric shape includes but is not limited to a triangle, a square, a circle or a polygon, etc., wherein the polygon is a regular polygon or an irregular polygon with a side length greater than or equal to 5.

[0075] Optionally, in the graphic composed of multiple geometric shapes, the multiple geometric shapes are arranged in a predetermined layout to form a graphic having a certain pattern, wherein the multiple geometric shapes are the same or different.

[0076] Optionally, the cross-sectional shapes of adjacent spliced ​​gas modules 10 are the same or different.

[0077] Optionally, the gas module 20 may be made of a polymer material or a composite material.

[0078] Combine Figures 6 to 12 As shown, in some embodiments, the air intake modules 10 are detachably connected via a first side connection structure and a second side connection structure.

[0079] In this embodiment, the first side connection structure includes a positioning structure and a first screw hole, and the second side connection structure includes a positioning and matching structure and a second screw hole. The first screw hole and the second screw hole are connected by bolts at the positioning structure and the positioning and matching structure. The bolt connection ensures the stability of the connection between the gas modules 10; the positioning structure and the positioning and matching structure are used to ensure the accuracy of the connection between the gas modules 10.

[0080] Optionally, one of the positioning structure and the positioning matching structure is a positioning protrusion, and one of the positioning structure and the positioning matching structure is a positioning groove.

[0081] In some embodiments, the air intake modules 10 are sealed.

[0082] In this embodiment, when the gas modules 10 are connected to each other, the gas channels of each gas module 10 are connected to each other. In this way, it is necessary to ensure the sealing of the gas channels 20 of each gas module 10. Therefore, the gas modules 10 are sealed. Here, you can refer to Figure 3 The sealing structure includes a sealing ring 15 , that is, a sealing ring 15 is provided in the circumferential direction of each air outlet 22 .

[0083] Combine Figure 6 As shown, in some embodiments, the air intake module 10 has a first surface 11, a second surface 12 and a third surface 13 located therebetween; wherein, the first surface 11 or the third surface 13 of the air intake module 10 is provided with an air intake area 16 corresponding to the first air intake channel 21 and the second air intake channel, and is used to be connected to the gas delivery component; the second surface of the air intake module 10 is provided with an air outlet area 17 corresponding to the first air intake channel 21 and the air distribution channel, and is used to be connected to the spray component 100.

[0084] In this embodiment, combined with Figure 5 and Figure 6 As shown, the spray assembly 100 includes a top plate 101 and a spray plate 103 . The top plate 101 is provided with an interface area 102 connected to the gas outlet area 17 of the gas module 10 , and the gas outlet area 17 is connected to the spray plate 103 via.

[0085] Here, the gas module 10 is provided with the outlet of the first gas inlet channel 21 and the outlet of the gas separation channel 31 as an example. A first interface area and a second interface area are provided on the top plate 101. The first gas inlet channel 21 is fed with the first reaction gas, and the outlet is connected to the first interface area. The gas separation channel 31 is fed with the second reaction gas, and the outlet is connected to the second interface area.

[0086] In this embodiment, the first surface 11 or the third surface 13 of the air intake module 10 is provided with an air inlet 21 of the gas channel. In this way, the air intake module 10 can be connected to the gas delivery component from different positions. Here, the third surface 13 may include multiple planes or cylindrical surfaces.

[0087] Combine Figure 4 As shown, in some embodiments, the air intake module 10 for connecting to the air delivery assembly includes a module body 14 and a cover plate 141 arranged on the top of the module body 14; wherein the cover plate 141 covers the top of the module body 14 to form a uniform air channel 30.

[0088] In this embodiment, a gas module 10 equipped with a cover plate 141 is connected to the gas delivery assembly, facilitating the machining of the gas distribution channel 30. Partial or complete wall sections of the gas distribution channel 30 may be located on the cover plate 141; alternatively, the entire wall section of the gas distribution channel 30 may be located on top of the module body 14. This facilitates direct machining on machine tools.

[0089] In this embodiment, when the gas module 10 includes a module body 14 and a cover plate 141 , the top surface of the cover plate 141 is the first surface 11 of the gas module 10 , and the cover plate 141 is fixed to the top of the module body 14 by bolts.

[0090] In some embodiments, the air inlet module 10, which is connected to the spray assembly 100, has its first air inlet channel 21 with its outlet located at the center of the second surface, and the outlets of the plurality of air distribution channels 31 are evenly spaced around the center of the second surface. This allows the air entering the spray assembly 100 to be evenly distributed.

[0091] In this embodiment, when the number of the air intake module 10 is one, the air outlet of the first air intake channel 21 is provided at the center position of the second surface of the air intake module 10, and the air outlets of several air distribution channels 31 are provided around the air outlet of the first air intake channel 21.

[0092] In this embodiment, when the number of air intake modules 10 is 2 or more, an air outlet of the first air intake channel 21 is provided at the center position of the second surface of the air intake module 10, and two or more groups of air outlets of the air intake channels 31 are provided around the air outlet of the first air intake channel 21.

[0093] Combine Figure 7 As shown, in some specific embodiments, when the number of the air intake modules 10 is 2, correspondingly, combined with Figure 7 As shown, the spray assembly is provided with multiple interface areas, and a first interface area 1021 connected to the air outlet of the first air inlet channel 21, a second interface area 1022 and a third interface area 1023 respectively connected to the air outlets of the air separation channels are provided on the top plate 101.

[0094] Combine Figure 13 As shown, the number of air intakes is 2, and the number of gas channels 20 required is 2. Correspondingly, the number of first air intake channels 21 is 1, the number of second air intake channels 22 is 1, the number of uniform air channels 30 is 1, and the number of air intake modules 10 is 1.

[0095] The first air inlet channel 21 is a curved channel extending from the third surface 13 of the air inlet module 10 to the middle of the first surface 11 of the air inlet module 10. The air uniforming channel 30 is provided on the second surface 12 of the air inlet module 10. The second air inlet channel 22 is a curved channel extending from the third surface 13 of the air inlet module 10 to the air uniforming channel 30. The air separation channel 31 extends from the air separation channel 30 to the second surface.

[0096] Combine Figure 14 As shown, the number of air intakes is 3, and the number of gas channels 20 required is 3. Correspondingly, the number of first air intake channels 21 is 1, the number of second air intake channels 22 is 2, the number of uniform air channels 30 is 2, and the number of air intake modules 10 is 2.

[0097] The air uniforming channel 30 is respectively provided on one side of the first surface 11 of the air intake module 10 and on one side of the second surface 12 of the air intake module 10 .

[0098] Combine Figure 15 As shown, the number of air intakes is 4, and the number of gas channels 20 required is 4. Correspondingly, the number of first air intake channels 21 is 1, the number of second air intake channels 22 is 3, the number of uniform air channels 30 is 3, and the number of air intake modules 10 is 3.

[0099] Two of the air uniformity channels 30 are respectively disposed on the first surface 11 of the first air intake module 10 and the second surface 12 of the air intake module 10 . Another air uniformity channel 30 is disposed on the second surface of the second air intake module 10 .

[0100] Here, the air uniforming channel 30 is respectively provided on one side of the first surface 11 of the air intake module 10 and on one side of the second surface 12 of the air intake module 10 , so that the air uniforming channel 30 is conveniently processed.

[0101] In the above embodiment, the number of air intakes is the same as the number of the gas channels 20 , and the number of the second air intake channels 22 , the number of the air uniforming channels 30 and the number of the air intake modules 10 are the same.

[0102] An embodiment of the present disclosure also provides a thin film deposition device, including: a reaction chamber; a spray assembly, arranged in the reaction chamber; a gas delivery assembly, an air intake structure for the thin film deposition device as in the aforementioned embodiment is arranged between the gas delivery assembly and the spray assembly; the gas delivery assembly and the spray assembly are connected through the air intake structure.

[0103] In this embodiment, the thin film deposition device includes the above-mentioned air intake structure for thin film deposition equipment. Referring to the above-mentioned embodiment, it at least has the beneficial effects brought by the technical solutions of the above-mentioned embodiments, which will not be described one by one here.

[0104] The above description and the accompanying drawings sufficiently illustrate the embodiments of the present disclosure to enable those skilled in the art to practice them. Other embodiments may include structural and other changes. The embodiments represent only possible variations. Unless expressly required, individual components and functions are optional, and the order of operations may vary. Portions and features of some embodiments may be included in or replace portions and features of other embodiments. The embodiments of the present disclosure are not limited to the structures described above and shown in the accompanying drawings, and various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims

1. An air intake structure for a thin film deposition device, characterized in that: The air intake structure is provided with N gas channels and N-1 uniform air channels, and the N gas channels are composed of 1 first air intake channel and N-1 second air intake channels, wherein N is a positive integer greater than or equal to 2; the first air intake channel is located at the central axis position of the air intake structure, and each of the second air intake channels is connected to each of the uniform air channels in a one-to-one correspondence, and the uniform air channel is provided with a plurality of gas distribution channels evenly spaced along the central axis of the air intake structure on one side relative to the second air intake channel.

2. The air intake structure according to claim 1, characterized in that: The gas uniforming channels are arranged at intervals in the longitudinal direction.

3. The air intake structure according to claim 1, characterized in that: The gas uniformity channel is a horizontally placed annular space.

4. The air intake structure according to any one of claims 1 to 3, characterized in that: The air uniformity channel is used as a boundary to separate the air into N-1 detachably connected air intake modules. 5 . The air intake structure according to claim 4 , wherein the air intake modules are detachably connected via a first side connection structure and a second side connection structure.

6. The air intake structure according to claim 4, characterized in that: The air intake modules are sealed.

7. The air intake structure according to claim 4, characterized in that: The air intake module has a first surface, a second surface and a third surface located therebetween; wherein, the first surface or the third surface of the air intake module is provided with an air inlet corresponding to the first air intake channel and the second air intake channel, and is used to be connected to the gas delivery component; the second surface of the air intake module is provided with an air outlet corresponding to the first air intake channel and the air distribution channel, and is used to be connected to the spray component.

8. The air intake structure according to claim 7, characterized in that: The air intake module used to be connected to the air delivery assembly includes a module body and a cover plate arranged on the top of the module body; wherein the cover plate covers the top of the module body to form the uniform air channel.

9. The air intake structure according to claim 7, characterized in that: The air intake module is used to be connected to the spray assembly, and the air outlet of its first air intake channel is located at the center of the second surface, and the air outlets of several air distribution channels are evenly spaced around the center of the second surface.

10. A thin film deposition device, characterized in that: include: reaction chamber; A spray assembly is arranged in the reaction chamber; An air delivery component, wherein an air intake structure for a thin film deposition device as described in any one of claims 1 to 9 is arranged between the air delivery component and the spray component; the air delivery component and the spray component are connected through the air intake structure.