Radio frequency test socket and electronic equipment

Abstract

The invention discloses a radio frequency test socket and electronic equipment. The radio frequency test socket provided by the invention comprises a first electric contact component and an impedance module, the first electric contact component is connected with the input end of the radio frequency test seat; the impedance module is arranged on the first electric contact component, and the impedance module is in contact with the first electric contact component; wherein the impedance module is used for attenuating signal power input from the input end of the radio frequency test socket.

Description

Technical Field

[0001] The present application belongs to the field of testing equipment, and specifically relates to a radio frequency test socket and electronic equipment. Background Art

[0002] During RF development, an RF test socket is typically added between the RF module and antenna module to test transmission-related indicators. For example, the RF test socket typically includes a metal dome, metal contacts, and a test probe. The metal dome connects to the RF module via the RF test socket's input terminal, the metal contact connects to the antenna module via the RF test socket's output terminal, and the test probe connects to the test instrument via the RF test socket's test terminal.

[0003] In related art, during RF testing using an RF test socket, the test probe contacts a metal spring, allowing the test meter to test the RF module's transmitted signal. After the test is complete, the metal spring contacts a metal contact, allowing the antenna module to transmit the signal from the RF module. However, during RF testing using an RF test socket, the power of the transmitted signal transmitted by the RF test socket can be too high, exceeding the test meter's range and potentially damaging the instrument. Summary of the Invention

[0004] The present application provides a radio frequency test socket and electronic equipment, which utilize an impedance module to attenuate the signal power transmitted by the radio frequency test socket, thereby avoiding the problem of excessive signal power transmitted by the radio frequency test socket damaging the test instrument.

[0005] In a first aspect, the present application provides a radio frequency test socket having an input end, the radio frequency test socket comprising: a first electrical contact component and an impedance module; the first electrical contact component is connected to the input end of the radio frequency test socket; The impedance module is disposed on the first electrical contact component, and the impedance module is in contact with the first electrical contact component; The impedance module is used to attenuate the signal power input from the input end of the radio frequency test socket.

[0006] In a second aspect, the present application provides an electronic device, comprising: a radio frequency module, an antenna module, and a radio frequency test socket as in the first aspect, wherein the input end of the radio frequency test socket is connected to the radio frequency module, and the output end of the radio frequency test socket is connected to the antenna module.

[0007] In an embodiment of the present application, a radio frequency test socket has an input terminal, and includes a first electrical contact component and an impedance module. The first electrical contact component is connected to the input terminal of the radio frequency test socket. The impedance module is disposed on the first electrical contact component and in contact with the first electrical contact component. The impedance module is configured to attenuate the power of a signal input from the input terminal of the radio frequency test socket. Thus, because the impedance module is disposed on the first electrical contact component of the radio frequency test socket, during radio frequency testing using the radio frequency test socket, the impedance module on the first electrical contact component attenuates the power of the signal transmitted by the radio frequency test socket, thereby avoiding the problem of excessive signal power transmitted by the radio frequency test socket damaging the test instrument. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which: Figure 1 A schematic diagram of a radio frequency test socket provided for related technologies; Figure 2 A schematic diagram of a radio frequency test socket provided for related technologies; Figure 3 A schematic diagram of a radio frequency test socket provided for some embodiments of the present application; Figure 4A A schematic diagram of a radio frequency test socket provided for some embodiments of the present application; Figure 4B A schematic diagram of a radio frequency test socket provided for some embodiments of the present application; Figure 5 A schematic diagram of a radio frequency test socket provided for some embodiments of the present application; Figure 6 for Figure 5 Schematic diagram of the equivalent circuit of the impedance module in the RF test socket shown; Figure 7 A schematic diagram of a radio frequency test socket provided for some embodiments of the present application; Figure 8 for Figure 7 Schematic diagram of the equivalent circuit of the impedance module in the RF test socket shown; Figure 9 A schematic diagram of a radio frequency test socket provided for some embodiments of the present application; Figure 10 for Figure 9 Schematic diagram of the equivalent circuit of the impedance module in the RF test socket shown; Figure 11 A schematic diagram of a radio frequency test socket provided for some embodiments of the present application; Figure 12 A schematic diagram of a radio frequency test socket provided for some embodiments of the present application; Figure 13 A schematic diagram of a radio frequency test socket provided for some embodiments of the present application; Figure 14 A schematic diagram of an electronic device provided for some embodiments of the present application; Figure 15 A schematic diagram of performing radio frequency testing on an electronic device provided in some embodiments of the present application.

[0009] Description of reference numerals: 10-RF test socket; 11-metal spring; 12-metal contact; 13-test probe; A-RF test socket input; B-RF test socket output; C-RF test socket test end; 20-RF module; 30-antenna module; 40-test instrument; 100-RF test socket; 110-first electrical contact component; 120-second electrical contact component; 130-impedance module; 140-third electrical contact component; 150-metal conductor; 160-ground component; 170-first insulating layer; R1-first resistor; R2-second resistor; R3-third resistor; R A -The impedance of the RF module; R B - Load impedance of the antenna module; R C - load impedance of the test module; GND - reference ground; 111 - first metal shrapnel; 111a - first part of the first metal shrapnel; 111b - second part of the first metal shrapnel; 112 - second metal shrapnel; 121 - second insulating layer; 122 - metal probe; 200 - RF module; 300 - antenna module; 400 - test probe; 500 - test instrument; 1400 - electronic equipment. DETAILED DESCRIPTION

[0010] The embodiments of the present application will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and are not to be construed as limiting the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0011] The terms "first," "second," and "third" in the specification and claims of this application may explicitly or implicitly refer to one or more of the features. Throughout the description of this application, unless otherwise specified, "plurality" means two or more. Furthermore, "and / or" in the specification and claims refers to at least one of the connected elements, and the character " / " generally indicates an "or" relationship between the connected elements.

[0012] In the description of this application, it should be understood that the terms "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on this application.

[0013] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "connected" and "connection" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, or electrical connections; direct connections, indirect connections through an intermediate medium, or internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0014] The terms used in the implementation section of this application are only used to explain the specific embodiments of this application and are not intended to limit this application.

[0015] The following is an explanation of the terms involved in the embodiments of the present application.

[0016] RF test socket: The RF test socket is used to assist the test module in testing the RF module. The RF test socket has an input end, an output end, and a test end. The input end of the RF test socket is connected to the RF module, the output end of the RF test socket is connected to the antenna module, and the test end of the RF test socket is connected to the test module. When the RF test socket is in a first state, the input end of the RF test socket and the test end of the RF test socket are connected, and the test module can test the transmission signal from the RF module; when the RF test socket is in a second state, the input end of the RF test socket and the output end of the RF test socket are connected, and the antenna module can transmit the signal from the RF module.

[0017] Electrical Contact Components: Electrical contact components are metal components within the RF test socket responsible for establishing electrical connections, ensuring highly reliable signal transmission along the signal transmission path. For example, the electrical contact components within the RF test socket may include: a first electrical contact component connected to the input terminal of the RF test socket, a second electrical contact component connected to the test terminal of the RF test socket, and a third electrical contact component connected to the output terminal of the RF test socket. In practical applications, specific types of electrical contact components may include, but are not limited to, metal springs, metal contacts, metal probes, elastic contact structures such as coil springs, and the like. This application does not limit the specific types of electrical contact components. In practical applications, the second electrical contact component may be a test probe. Depending on the actual test requirements and specific test environment, the test probe may be built into the RF test socket or located outside the RF test socket. For example, if the test probe is a built-in test probe such as a coaxial probe or a microstrip probe, the RF test socket includes the first electrical contact component, the second electrical contact component, and the third electrical contact component. For another example, if the test probe is an external test probe such as a high-frequency probe or an RF probe card, the RF test socket includes the first electrical contact component and the third electrical contact component.

[0018] Impedance module: An impedance module refers to a functional component or circuit unit used to control the impedance of the signal transmission path of the RF test socket. The impedance module may include impedance matching elements such as resistors, capacitors, and inductors, and achieve impedance matching through an L-type circuit, a π-type circuit, or a T-type circuit. In an embodiment of the present application, the impedance module is provided on the first signal transmission path between the input end of the RF test socket and the test end of the RF test socket, and is used to attenuate the power of the signal transmitted on the first signal transmission path between the input end of the RF test socket and the test end of the RF test socket.

[0019] The following describes the radio frequency test socket and electronic equipment provided by the embodiments of the present application in conjunction with the accompanying drawings.

[0020] like Figure 1 and Figure 2As shown, the RF test socket 10 provided in the related art includes a metal shrapnel 11, a metal contact 12, and a test probe 13. The metal shrapnel 11 is connected to the RF module 20 through the input terminal A of the RF test socket 10, the metal contact 12 is connected to the antenna module 30 through the output terminal B of the RF test socket 10, and the test probe 13 is connected to the test meter 40 through the test terminal C of the RF test socket. In the related art, during the RF test process using the RF test socket 10, the test probe 13 contacts the metal shrapnel 11, and the test meter 40 can test the transmission signal of the RF module 20; after the test is completed, the metal shrapnel 11 contacts the metal contact 12, and the antenna module 30 transmits the signal from the RF module 20. However, during the RF test process using the RF test socket 10, there is a problem in the related art that the power of the transmission signal transmitted by the RF test socket 10 is too large, exceeding the range of the test meter 40, thereby damaging the test meter.

[0021] Based on this, an embodiment of the present application provides a new type of RF test socket, which utilizes an impedance module set between the input end and the test end of the RF test socket to achieve attenuation of the signal power transmitted by the RF test socket, thereby avoiding the problem of excessive signal power transmitted by the RF test socket and damaging the test instrument.

[0022] In some embodiments of the present application, Figure 3 As shown, an embodiment of the present application provides a radio frequency test socket 100, which has an input terminal A. The radio frequency test socket 100 may include: a first electrical contact component 110 and an impedance module 130; the first electrical contact component 110 is connected to the input terminal A of the radio frequency test socket 100; The impedance module 130 is disposed on the first electrical contact component 110 , and the impedance module 130 contacts the first electrical contact component 110 ; The impedance module 130 is used to attenuate the signal power input from the input terminal A of the RF test socket 100 .

[0023] It should be noted that since the impedance module 130 is disposed on the first electrical contact component 110 and is in contact with the first electrical contact component 110 , when the test signal transmitted by the RF test socket passes through the first electrical contact component 110 and the impedance module 130 , the impedance module can attenuate the signal power input from the input end of the RF test socket.

[0024] In this way, since the impedance module is provided on the first electrical contact component of the RF test socket, during the RF test using the RF test socket, the impedance module on the first electrical contact component is utilized to achieve attenuation of the signal power transmitted by the RF test socket, thereby avoiding the problem of excessive signal power transmitted by the RF test socket and damaging the test instrument.

[0025] In actual applications, during the test of radio frequency signals, the embodiment of the present application uses a test probe to abut against the impedance module on the first electrical contact component to attenuate the power of the signal to be tested transmitted by the radio frequency test socket. Depending on the actual test requirements and the specific test environment, the test probe can be built into the radio frequency test socket or located outside the radio frequency test socket. For example, in the case where the test probe includes a built-in test probe such as a coaxial probe or a microstrip probe, the radio frequency test socket includes the test probe. For another example, in the case where the test probe includes an external test probe such as a high-frequency probe or a radio frequency probe card, the radio frequency test socket cooperates with the test probe to realize the test of the radio frequency signal. The following is an example of a test probe built into the radio frequency test socket.

[0026] In some embodiments of the present application, Figure 4A or Figure 4B As shown, an embodiment of the present application provides a radio frequency test socket 100, which has an input terminal A and a test terminal C. The radio frequency test socket 100 may include a first electrical contact component 110, a second electrical contact component 120, and an impedance module 130; the first electrical contact component 110 is connected to the input terminal A of the radio frequency test socket, and the second electrical contact component 120 is connected to the test terminal C of the radio frequency test socket; The impedance module 130 is disposed in a target area of ​​the first electrical contact component 110 and contacts the target area of ​​the first electrical contact component 110 ; the target area is an area of ​​the first electrical contact component 110 facing the second electrical contact component 120 ; The second electrical contact component 120 includes a test probe, which abuts against the impedance module 130 on the first electrical contact component to attenuate the power of the signal to be tested input from the input end of the radio frequency test socket.

[0027] Among them, such as Figure 4A As shown, when the RF test socket 100 is in the first state, the second electrical contact component 120 contacts the impedance module 130, and the input terminal A of the RF test socket is connected to the test terminal C of the RF test socket through the first electrical contact component 110, the impedance module 130 and the second electrical contact component 120.

[0028] During RF testing using the RF test socket 100, input terminal A of the RF test socket 100 is used to connect to the RF module and input the transmit signal from the RF module. Test terminal C of the RF test socket 100 is used to connect to a test module and output the transmit signal transmitted by the RF test socket 100 to the test module to implement the RF testing function of the test module. The test module can include, but is not limited to, various types of test instruments.

[0029] When the RF test socket 100 is in the first state, the first electrical contact component 110, the impedance module 130, and the second electrical contact component 120 form a first signal transmission path, enabling signal transmission along the first signal transmission path. The impedance module 130 can control or adjust the impedance of the first signal transmission path, thereby controlling the power of the signal transmitted along the first signal transmission path. In this case, since the transmit signal transmitted by the RF test socket 100 passes through the impedance module 130, the signal power can be attenuated by the impedance module 130, making the signal power at the test terminal C of the RF test socket less than the signal power at the input terminal A of the RF test socket. The RF test socket has a signal power attenuation function, thereby avoiding the problem of excessive signal power transmitted by the RF test socket damaging the test instrument.

[0030] In this way, since the impedance module 130 is set in the target area of ​​the first electrical contact component 110 of the RF test socket 100, the input terminal A of the RF test socket can be connected to the test terminal C of the RF test socket through the first electrical contact component 110, the impedance module 130, and the second electrical contact component 140. During the RF test using the RF test socket 100, the impedance module 130 between the input terminal A and the test terminal C of the RF test socket is used to attenuate the signal power transmitted by the RF test socket 100, thereby avoiding the problem of excessive signal power transmitted by the RF test socket and damaging the test instrument.

[0031] In some embodiments of the present application, after the RF test is completed, the RF test socket 100 can be switched from the first state to the second state to enable the antenna module to operate normally. Figure 4B As shown, the RF test socket 100 has an output terminal B. The RF test socket 100 further includes a third electrical contact component 140 . The third electrical contact component 140 is connected to the output terminal B of the RF test socket.

[0032] The output end of the RF test socket is used to connect to the antenna module, and the antenna module can transmit the signal from the RF module.

[0033] Among them, such as Figure 4B As shown, when the RF test socket 100 is in the second state, the first electrical contact component 110 contacts the third electrical contact component 140 , and the input terminal A of the RF test socket is connected to the output terminal B of the RF test socket through the first electrical contact component 110 and the third electrical contact component 140 .

[0034] In this way, after completing the RF test, the RF test socket 100 can be switched from the first state to the second state. When the RF test socket 100 is in the second state, the first electrical contact component 110 and the third electrical contact component 140 form a second signal transmission path to realize signal transmission on the second signal transmission path, thereby utilizing the second signal transmission path to transmit the transmission signal of the RF module to the antenna module, so that the antenna module can perform signal transmission.

[0035] In some embodiments of the present application, after the impedance module is set in the RF test socket 100, in order to suppress the noise and interference that may be introduced by the impedance module, the impedance module 130 can be grounded when the RF test socket 100 is in the first state to avoid the introduction of noise. Figure 5 、 Figure 7 or Figure 9 As shown, the RF test socket 100 may further include a metal conductor 150 and a grounding component 160 . The metal conductor 150 is connected to the impedance module 130 , and the grounding component 160 is disposed opposite to the metal conductor 150 .

[0036] Among them, such as Figure 7 or Figure 9 As shown, when the RF test socket 100 is in the first state, the metal conductor 150 is in contact with the ground component 160 , and the impedance module 130 is connected to the ground component 160 through the metal conductor 150 .

[0037] The metal conductor 150 may include a metal wire, a metal strip, a metal sheet, etc. The embodiment of the present application does not limit the specific type of the metal conductor 150.

[0038] The grounding component 160 may include a GND contact, and the grounding component 160 is used for grounding.

[0039] One end of the metal conductor 150 is connected to the impedance module 130 , and the other end of the metal conductor 150 is arranged opposite to the ground component 160 . When the RF test socket 100 is in the first state, the metal conductor 150 is used to connect the impedance module and the ground component 160 .

[0040] For example, if Figure 7 or Figure 9 As shown, when the RF test socket 100 is in the first state, the metal conductor 150 contacts the ground component 160, so that the impedance module 130 is connected to the ground component 160 through the metal conductor 150. Then, an attenuation network is formed by the impedance module 130, the metal conductor 150 and the ground component 160. The attenuation network is used to attenuate the signal power input from the input terminal A of the RF test socket 100.

[0041] Furthermore, the impedance module 130 forms a signal return path through the metal conductor 150 and the grounding component 160 to avoid radiation or crosstalk caused by an incomplete signal return path.

[0042] In this way, since the impedance module 130 is connected to the grounding component 160 through the metal conductor 150, the impedance module 130 can be grounded through the metal conductor 150 and the grounding component 160, ensuring that the current on the first signal transmission path is completely returned, avoiding radiation or crosstalk caused by an incomplete signal return path, and ensuring signal integrity, electromagnetic compatibility and system stability.

[0043] In some embodiments of the present application, in order to achieve precise impedance matching, the impedance module 130 may include multiple resistors. By combining resistors of different values, the target impedance value, such as 50Ω, can be accurately synthesized. The circuit network composed of multiple resistors is dynamically adjusted to match the load impedance of the test module to adapt to complex load requirements. For example, Figure 5 、 Figure 7 or Figure 9 As shown, the impedance module 130 may include a plurality of resistors, and the plurality of resistors are stacked and disposed in a target area of ​​the first electrical contact component 110 .

[0044] Among them, the impedance module 130 includes multiple resistors, the number of the multiple resistors can be set according to actual needs, and the resistance value of each of the multiple resistors can be set according to actual needs. This application does not impose any specific restrictions on this.

[0045] For example, in the embodiment of the present application, multiple layers of thin film resistors may be coated on the target area of ​​the first electrical contact component 110 , and each thin film resistor may be independently controlled to be grounded through a metal conductor, thereby forming an attenuation network.

[0046] Among them, such as Figure 7 or Figure 9 As shown, when the RF test socket 100 is in the first state, multiple resistors, the metal conductor 150 and the grounding component 160 form an attenuation network; the attenuation network is used to attenuate the signal power input from the input end of the RF test socket 100, and the attenuation amount of the attenuation network is obtained based on the resistance values ​​of the multiple resistors.

[0047] The attenuation of the attenuation network is obtained based on the resistance values ​​of the multiple resistors. By adjusting the resistance values ​​of the multiple resistors, the attenuation of the attenuation network can be adjusted, thereby achieving any degree of energy attenuation.

[0048] The impedance of the attenuation network can match the impedance of the RF module, and the impedance of the attenuation network can match the load impedance at the test module end, thereby avoiding the problem of impedance mismatch.

[0049] In this way, the attenuation network formed by the multiple resistors, the metal conductor 150, and the grounding component 160 can match the impedance of the attenuation network with the source impedance of the RF module and the load impedance of the test module, thus avoiding impedance mismatch. Furthermore, by adjusting the resistance values ​​of the multiple resistors, the attenuation of the attenuation network can be flexibly adjusted, thereby achieving any degree of energy attenuation.

[0050] In practical applications, the attenuation network formed by multiple resistors, metal conductors 150 and grounding components 160 may include a π-type attenuation network, a T-type attenuation network or other types of attenuation networks, etc. This application does not limit the specific type of the attenuation network, and examples are given below.

[0051] In some embodiments of the present application, the attenuation network formed by the plurality of resistors, the metal conductor 150 and the grounding component 160 is a π-type attenuation network as an example. Figure 5 or Figure 7 As shown, the multiple resistors include a first resistor R1, a second resistor R2 and a third resistor R3, the second resistor R2 is located between the first resistor R1 and the third resistor R3, one end of the second resistor R2 is in contact with the first resistor R1, and the other end of the second resistor R2 is in contact with the third resistor R3; the first resistor R1 and the third resistor R3 are connected to the metal conductor 150.

[0052] In the scenario where the signal of the input terminal A of the RF test socket 100 is transmitted to the output terminal B of the RF test socket 100, as shown in FIG. Figure 5 As shown, when the RF test socket 100 is in the second state, the first electrical contact component 110 contacts the third electrical contact component 140, and the input terminal A of the RF test socket is connected to the output terminal B of the RF test socket through the first electrical contact component 110 and the third electrical contact component 140. In this case, the equivalent circuit of the first resistor R1, the second resistor R2 and the third resistor R3 can be referred to Figure 6 , the first resistor R1, the second resistor R2 and the third resistor R3 are equivalent to a series connection, and one end of the third resistor R3 is in an open circuit state. Figure 6 The dotted line indicates that the equivalent impedance of the first resistor R1, the second resistor R2 and the third resistor R3 is infinite, and the RF system is usually a 50Ω system. The impedance of the RF module R A The load impedance of the antenna module is 50Ω. B The impedance module 130 has little effect on normal signal transmission.

[0053] In the scenario where the signal of the input terminal A of the RF test socket 100 is transmitted to the test terminal C of the RF test socket 100, as shown in FIG. Figure 7As shown, when the RF test socket 100 is in the first state, the first resistor R1 and the third resistor R3 are connected to the ground component 160 through the metal conductor 150, and the first resistor R1, the second resistor R2, the third resistor R3, the metal conductor 150 and the ground component 160 form a π-type attenuation network.

[0054] In this case, the equivalent circuit of the first resistor R1, the second resistor R2 and the third resistor R3 can be referred to Figure 8 The first resistor R1, the second resistor R2, the third resistor R3 and the grounding component 160 may form a π-type attenuation network.

[0055] In the π-type attenuation network, the embodiment of the present application can adjust the attenuation and impedance of the π-type attenuation network by adjusting the resistance values ​​of the first resistor R1, the second resistor R2, and the third resistor R3.

[0056] The attenuation of the π-type attenuation network during the transmission of a signal from input terminal A of the RF test socket 100 to the test terminal of the RF test socket 100 can represent the degree of attenuation of the transmitted signal. The attenuation of the π-type attenuation network can be determined based on the ratio of the signal power at test terminal C of the RF test socket to the signal power at input terminal A of the RF test socket.

[0057] The impedance of the π-type attenuation network can be compared with the impedance R of the RF module. A , the load impedance of the test module R C Match to avoid affecting normal signal transmission.

[0058] For example, the RF system is usually a 50Ω system, and the impedance of the RF module R A The load impedance of the test module is 50Ω. C Therefore, the impedance of the π-type attenuation network formed by the first resistor R1, the second resistor R2, the third resistor R3 and the grounding component 160 can be adjusted to 50Ω to avoid affecting normal signal transmission.

[0059] When the impedance of the π-type attenuation network is determined to be 50Ω, the embodiment of the present application can determine the attenuation of the π-type attenuation network by pre-estimating the difference between the signal power at the input terminal A of the RF test socket and the range of the test module; then, select the first resistor R1, the second resistor R2 and the third resistor R3 with resistance values ​​corresponding to the attenuation.

[0060] Among them, the specific value of the attenuation of the π-type attenuation network can be set according to actual needs, and this application does not impose any specific restrictions on this.

[0061] The resistance values ​​of the first resistor R1, the second resistor R2, and the third resistor R3 are functionally related to the impedance and attenuation of the π-type attenuation network. In practical applications, embodiments of the present application can calculate the resistance values ​​of the first resistor R1, the second resistor R2, and the third resistor R3 based on the impedance and attenuation of the π-type attenuation network, and select resistors with corresponding resistance values.

[0062] For example, when the impedance of the π-type attenuation network is 50Ω and the attenuation of the π-type attenuation network is 1 dB, the first resistor R1 and the third resistor R3 may be 6Ω resistors, and the second resistor R2 may be 870Ω resistor.

[0063] For example, when the impedance of the π-type attenuation network is 50Ω and the attenuation of the π-type attenuation network is 2 dB, the first resistor R1 and the third resistor R3 may be 12Ω resistors, and the second resistor R2 may be 436Ω resistor.

[0064] For example, when the impedance of the π-type attenuation network is 50Ω and the attenuation of the π-type attenuation network is 3 dB, the first resistor R1 and the third resistor R3 may be 18Ω resistors, and the second resistor R2 may be 292Ω resistor.

[0065] For example, when the impedance of the π-type attenuation network is 50Ω and the attenuation of the π-type attenuation network is 4 dB, the first resistor R1 and the third resistor R3 may be 24Ω resistors, and the second resistor R2 may be 221Ω resistor.

[0066] For example, when the impedance of the π-type attenuation network is 50Ω and the attenuation of the π-type attenuation network is 5 dB, the first resistor R1 and the third resistor R3 may be 30Ω resistors, and the second resistor R2 may be 178Ω resistor.

[0067] In this way, the embodiment of the present application can set the impedance and attenuation of the π-type attenuation network by adjusting the resistance values ​​of the first resistor R1, the second resistor R2 and the third resistor R3, thereby achieving any degree of energy attenuation, and avoiding the problem of impedance mismatch, without affecting normal signal transmission.

[0068] In some embodiments of the present application, the attenuation network formed by the plurality of resistors, the metal conductor 150 and the grounding component 160 is a T-type attenuation network as an example. Figure 9 As shown, the multiple resistors include a first resistor R1, a second resistor R2 and a third resistor R3, the second resistor R2 is located between the first resistor R1 and the third resistor R3, one end of the second resistor R2 is in contact with the first resistor R1, and the other end of the second resistor R2 is in contact with the third resistor R3; the second resistor R2 is connected to the metal conductor 150.

[0069] In the scenario where the signal of the input terminal A of the RF test socket 100 is transmitted to the test terminal C of the RF test socket 100, as shown in FIG. Figure 9 As shown, when the RF test socket 100 is in the first state, the second resistor R2 is connected to the ground component 160 through the metal conductor 150, and the first resistor R1, the second resistor R2, the third resistor R3, the metal conductor 150 and the ground component 160 form a T-type attenuation network.

[0070] In this case, the equivalent circuit of the first resistor R1, the second resistor R2 and the third resistor R3 can be referred to Figure 10 The first resistor R1 , the second resistor R2 , the third resistor R3 and the grounding component 160 may form a T-type attenuation network.

[0071] In the T-type attenuation network, the embodiment of the present application can set the attenuation and impedance of the T-type attenuation network by adjusting the resistance values ​​of the first resistor R1, the second resistor R2 and the third resistor R3.

[0072] The attenuation of the T-type attenuation network during the transmission of the signal from input terminal A of the RF test socket 100 to the test terminal of the RF test socket 100 can represent the degree of attenuation of the transmitted signal. The attenuation of the T-type attenuation network can be determined based on the ratio of the signal power at test terminal C of the RF test socket to the signal power at input terminal A of the RF test socket.

[0073] The impedance of the T-type attenuation network can be compared with the impedance R of the RF module. A , the load impedance of the test module R C Matching to avoid impedance mismatch problems that may affect normal signal transmission.

[0074] For example, the RF system is usually a 50Ω system, and the impedance of the RF module R A The load impedance of the test module is 50Ω. C Therefore, the impedance of the T-type attenuation network formed by the first resistor R1, the second resistor R2, the third resistor R3 and the grounding component 160 can be set to 50Ω to avoid the impedance mismatch problem.

[0075] When the impedance of the T-type attenuation network is determined to be 50Ω, the embodiment of the present application can determine the attenuation of the T-type attenuation network by pre-estimating the difference between the signal power at the input terminal A of the RF test socket and the range of the test module; then, select the first resistor R1, the second resistor R2 and the third resistor R3 with resistance values ​​corresponding to the impedance and attenuation.

[0076] Among them, the specific value of the attenuation of the T-type attenuation network can be set according to actual needs, and this application does not impose any specific restrictions on this.

[0077] The resistance values ​​of the first resistor R1, the second resistor R2, and the third resistor R3 are functionally related to the impedance and attenuation of the T-type attenuation network. In practical applications, embodiments of the present application can calculate the resistance values ​​of the first resistor R1, the second resistor R2, and the third resistor R3 based on the impedance and attenuation of the T-type attenuation network, and select resistors with corresponding resistance values.

[0078] For example, when the impedance of the T-type attenuation network is 50Ω and the attenuation of the T-type attenuation network is 1 dB, the first resistor R1 and the third resistor R3 may be 3Ω resistors, and the second resistor R2 may be 433Ω resistor.

[0079] For example, when the impedance of the T-type attenuation network is 50Ω and the attenuation of the T-type attenuation network is 2 dB, the first resistor R1 and the third resistor R3 may be 6Ω resistors, and the second resistor R2 may be 215Ω resistor.

[0080] For example, when the impedance of the T-type attenuation network is 50Ω and the attenuation of the T-type attenuation network is 3 dB, the first resistor R1 and the third resistor R3 may be 9Ω resistors, and the second resistor R2 may be 142Ω resistor.

[0081] For example, when the impedance of the T-type attenuation network is 50Ω and the attenuation of the T-type attenuation network is 4 dB, the first resistor R1 and the third resistor R3 may be 11Ω resistors, and the second resistor R2 may be 105Ω resistor.

[0082] For example, when the impedance of the T-type attenuation network is 50Ω and the attenuation of the T-type attenuation network is 5 dB, the first resistor R1 and the third resistor R3 may be 14Ω resistors, and the second resistor R2 may be 82Ω resistor.

[0083] In this way, the embodiment of the present application can set the impedance and attenuation of the T-type attenuation network by adjusting the resistance values ​​of the first resistor R1, the second resistor R2 and the third resistor R3, thereby achieving any degree of energy attenuation without affecting normal signal transmission.

[0084] In some embodiments of the present application, in order to avoid the risk of short circuit caused by the contact between the first electrical contact component 110 and the metal conductor 150, as shown in FIG. Figure 5 、 Figure 7 or Figure 9 As shown, the RF test socket 100 may further include a first insulating layer 170 , which is disposed between the first electrical contact component 110 and the metal conductor 150 .

[0085] Thus, since the first insulating layer 170 is disposed between the first electrical contact component 110 and the metal conductor 150 , the first insulating layer 170 avoids the risk of short circuit caused by contact between the first electrical contact component 110 and the metal conductor 150 , thereby improving the safety of the RF test socket.

[0086] In some embodiments of the present application, in order to increase the flexibility of using the RF test socket 100 and achieve different degrees of energy attenuation, the embodiments of the present application may provide a RF test socket with multiple levels of attenuation.

[0087] For example, the first electrical contact component may include a first metal spring and a second metal spring. The region of the first metal spring facing the second electrical contact component is not provided with an impedance module, while the region of the second metal spring facing the second electrical contact component is provided with an impedance module. In this case, when the first metal spring contacts the second electrical contact component, signal transmission is performed without energy attenuation. When the impedance module on the second metal spring contacts the second electrical contact component, signal transmission is performed with power attenuation, thereby forming a two-stage attenuation RF test socket.

[0088] For another example, the first electrical contact component may include a first metal spring, a second metal spring, and a third metal spring. No impedance module is provided in the area of ​​the first metal spring facing the second electrical contact component, a first impedance module is provided in the area of ​​the second metal spring facing the second electrical contact component, and a second impedance module is provided in the area of ​​the third metal spring facing the second electrical contact component. The impedance of the first impedance module is less than the impedance of the second impedance module. In this case, when the first metal spring contacts the second electrical contact component, signal transmission occurs without energy attenuation. When the first impedance module on the second metal spring contacts the second electrical contact component, signal transmission occurs at a first level of energy attenuation. When the second impedance module on the third metal spring contacts the second electrical contact component, signal transmission occurs at a second level of energy attenuation, thereby forming a three-level attenuation RF test socket.

[0089] It should be noted that the embodiment of the present application can be configured with a radio frequency test socket with one level of attenuation, two levels of attenuation, three levels of attenuation or any level of attenuation according to actual needs, and the present application does not impose any specific restrictions on this.

[0090] For example, take the RF test socket with two levels of attenuation as an example. Figure 11 As shown, the first electrical contact component 110 includes a first metal spring 111 and a second metal spring 112 , which are connected to the input terminal A of the RF test socket; and the impedance module 130 is provided on the second metal spring 112 .

[0091] In this case, when the first metal spring contacts the second electrical contact component, signal transmission is achieved without energy attenuation; when the impedance module on the second metal spring contacts the second electrical contact component, signal transmission is achieved with power attenuation, thereby forming a two-stage attenuation RF test socket, increasing the flexibility of the RF test socket and achieving different degrees of energy attenuation.

[0092] In a specific example, the second electrical contact component (such as a test probe) is provided in the RF test socket 100. In the scenario where the signal of the input terminal A of the RF test socket 100 is transmitted to the test terminal C of the RF test socket 100 and the signal power of the input terminal A of the RF test socket 100 is too large, as shown in FIG. Figure 13 As shown, when the RF test socket 100 is in the first state, the second electrical contact component 120 contacts the impedance module 130 on the target area of ​​the second metal spring 112, and the input terminal A of the RF test socket is connected to the test terminal C of the RF test socket through the second metal spring 112, the impedance module 130 and the second electrical contact component 120.

[0093] Thus, during RF testing using the RF test socket 100, the second metal spring 112, the impedance module 130, and the second electrical contact member 120 form a first signal transmission path, enabling signal transmission along the first signal transmission path. The impedance module 130 can control or adjust the impedance of the first signal transmission path, thereby controlling the power of the signal transmitted along the first signal transmission path. In this case, since the transmit signal transmitted by the RF test socket 100 is attenuated by the impedance module 130 after passing through it, the signal power can be attenuated by the impedance module 130, making the signal power at the test terminal C of the RF test socket less than the signal power at the input terminal A of the RF test socket. The RF test socket has a power attenuation function, thereby avoiding the problem of excessive signal power transmitted by the RF test socket damaging the test instrument.

[0094] In addition, in the scenario where the signal of the input terminal A of the RF test socket 100 is transmitted to the test terminal C of the RF test socket 100 and the signal power of the input terminal A of the RF test socket 100 does not need to be attenuated, such as Figure 12 As shown, when the RF test socket 100 is in the third state, the second electrical contact component 120 contacts the first metal spring 111 , and the input terminal A of the RF test socket is connected to the test terminal C of the RF test socket through the first metal spring 111 and the second electrical contact component 120 .

[0095] In this way, during the RF test process using the RF test socket 100, the first metal spring 111 and the second electrical contact component 120 form a third signal transmission path, realizing signal transmission on the third signal transmission path, and the signal power transmitted by the RF test socket 100 is not attenuated, so as to adapt to the scenario where the signal power of the input terminal A of the RF test socket 100 does not need to be attenuated.

[0096] In addition, in the scenario where the signal of the input terminal A of the RF test socket 100 is transmitted to the output terminal B of the RF test socket 100, as shown in FIG. Figure 11 As shown, when the RF test socket 100 is in the second state, the first metal spring 111 contacts the third electrical contact component 140 , and the input terminal A of the RF test socket is connected to the output terminal B of the RF test socket through the first metal spring 111 and the third electrical contact component 140 .

[0097] In this way, the first metal spring 111 and the third electrical contact component 140 form a second signal transmission path to implement signal transmission on the second signal transmission path, thereby transmitting the transmission signal of the RF module to the antenna module, so that the antenna module can transmit the signal.

[0098] In practical applications, the positions of the first metal spring 111 and the second metal spring 112 can be interchanged according to actual needs, and the present application does not impose any specific restrictions on the relative positions of the first metal spring 111 and the second metal spring 112. Figure 11 As shown, the first metal spring 111 may be a metal spring close to the second electrical contact component 120, and the second metal spring 112 may be a metal spring away from the second electrical contact component 120. For another example, in other embodiments (not shown), the second metal spring may be a metal spring close to the second electrical contact component, and the first metal spring may be a metal spring away from the second electrical contact component.

[0099] In some embodiments of the present application, in order to avoid the risk of short circuit caused by the second electrical contact component 120 being in electrical contact with the first metal spring 111 and the second metal spring 112 at the same time, the second electrical contact component 120 can be set as a metal probe in the embodiment of the present application, and a portion of the surface of the metal probe is covered with an insulating layer. The end of the metal probe extends from the insulating layer toward the first electrical contact component to avoid the metal probe being in electrical contact with the first metal spring 111 and the second metal spring 112 at the same time.

[0100] For example, the first metal spring 111 is a metal spring close to the second electrical contact component 120, and the second metal spring 112 is a metal spring far from the second electrical contact component 120. Figure 11 、 Figure 12 or Figure 13As shown, the RF test socket 100 includes a second electrical contact component 120 , which may include a second insulating layer 121 and a metal probe 122 . The second insulating layer 121 covers a portion of the surface of the metal probe 122 , and the metal probe 122 extends from the second insulating layer 122 toward the end of the first electrical contact component 110 .

[0101] In the scenario where the signal of the input terminal A of the RF test socket 100 is transmitted to the test terminal C of the RF test socket 100, as shown in FIG. Figure 13 As shown, when the RF test socket 100 is in the first state, the end of the metal probe 122 contacts the impedance module 130 , and the second insulating layer 122 contacts the first metal spring 111 .

[0102] Thus, when the RF test socket 100 is in the first state, the second insulating layer 122 separates the first metal spring 111 from the metal probe 122 , thereby preventing the metal probe from electrically contacting both the first and second metal springs 111 and 112 at the same time, thereby preventing a short circuit risk.

[0103] For example, if Figure 11 As shown, the first metal dome 111 may include a first portion 111 a and a second portion 111 b , and the first portion 111 a of the first metal dome is connected to the input terminal A of the RF test socket.

[0104] like Figure 13 As shown, when the RF test socket 100 is in the first state, the first portion 111a of the first metal dome contacts the second insulating layer 121. Thus, the second insulating layer 122 separates the first portion 111a of the first metal dome from the metal probe 122, thereby preventing the risk of a short circuit caused by the metal probe being in electrical contact with both the first portion 111a of the first metal dome and the second metal dome 112.

[0105] In addition, if Figure 11 As shown, when the RF test socket 100 further includes a third electrical contact component 140 and the third electrical contact component 140 is connected to the output terminal B of the RF test socket, when the RF test socket 100 is in the second state, the first portion 111a of the first metal dome contacts the second portion 111b of the first metal dome, and the second portion 111b of the first metal dome contacts the third electrical contact component 140. Thus, the first portion 111a of the first metal dome, the second portion 111b of the first metal dome, and the third electrical contact component 140 form a second signal transmission path, enabling signal transmission along the second signal transmission path. The second signal transmission path is then used to transmit the transmit signal from the RF module to the antenna module, facilitating signal transmission by the antenna module.

[0106] In addition, if Figure 12As shown, when the RF test socket 100 is in the third state, the first portion 111a of the first metal dome contacts the end of the metal probe 122. Thus, the first portion 111a of the first metal dome 111 and the second electrical contact member 120 form a third signal transmission path, enabling signal transmission along the third signal transmission path. The signal power transmitted by the RF test socket 100 is not attenuated, thus accommodating scenarios where the signal power at the input terminal A of the RF test socket 100 does not need to be attenuated.

[0107] In this way, the embodiment of the present application increases the flexibility of using the RF test socket 100 by providing a multi-level attenuation RF test socket 100 and achieves different degrees of energy attenuation.

[0108] Based on the same concept as the radio frequency test socket provided in any of the above embodiments, an embodiment of the present application further provides an electronic device.

[0109] like Figure 14 As shown, an embodiment of the present application provides an electronic device 1400, including: a RF module 200, an antenna module 300 and a RF test socket 100; the input end A of the RF test socket 100 is connected to the RF module 200, and the output end B of the RF test socket is connected to the antenna module 300.

[0110] It should be noted that the electronic device provided in the embodiment of the present application includes the RF test socket provided in any of the above embodiments and can realize all the functions of the RF test socket. To avoid repetition, it will not be described here.

[0111] In practical applications, such as Figure 15 As shown, during the RF test process using the RF test socket 100 in the electronic device, the test meter 500 abuts against the impedance module 130 in the RF test socket 100 through the test probe 400, thereby utilizing the impedance module 130 to attenuate the signal power transmitted by the RF test socket, thereby expanding the range of transmission power that the test meter can test, and also avoiding the problem of the signal power transmitted by the RF test socket being too large and exceeding the range of the test meter and damaging the test meter.

[0112] In actual applications, in the application scenario of mass production testing, by adding an impedance module in the RF test socket, the RF test socket has the function of attenuating the transmission signal power. Compared with the related technology of connecting an attenuator in the path between the input end of the RF test socket and the RF module, there is no need to manually adjust the attenuation of the attenuator, which improves the testing efficiency and production efficiency.

[0113] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0114] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions, and variations may be made to the embodiments without departing from the principles and intent of the present application, and that the scope of the present application is defined by the claims and their equivalents.

Claims

1. A radio frequency test socket, the radio frequency test socket having an input end, characterized in that: The radio frequency test socket includes: a first electrical contact component and an impedance module; the first electrical contact component is connected to the input end of the radio frequency test socket; The impedance module is disposed on the first electrical contact component, and the impedance module is in contact with the first electrical contact component; The impedance module is used to attenuate the signal power input from the input end of the radio frequency test socket.

2. The radio frequency test socket according to claim 1, characterized in that: The radio frequency test socket further includes a metal conductor and a grounding component, wherein the metal conductor is connected to the impedance module, and the grounding component is arranged opposite to the metal conductor; Wherein, when the radio frequency test socket is in the first state, the metal conductor is in contact with the ground component, and the impedance module is connected to the ground component through the metal conductor.

3. The radio frequency test socket according to claim 2, characterized in that: The impedance module includes a plurality of resistors, and the plurality of resistors are stacked and arranged in a target area of ​​the first electrical contact component; Wherein, when the RF test socket is in the first state, the multiple resistors, the metal conductor and the grounding component form an attenuation network; the attenuation network is used to attenuate the signal power input from the input end of the RF test socket.

4. The radio frequency test socket according to claim 3, characterized in that: The plurality of resistors include a first resistor, a second resistor, and a third resistor, wherein the second resistor is located between the first resistor and the third resistor, one end of the second resistor is in contact with the first resistor, and the other end of the second resistor is in contact with the third resistor; the first resistor and the third resistor are connected to the metal conductor; When the RF test socket is in the first state, the first resistor and the third resistor are connected to the ground component through the metal conductor, and the first resistor, the second resistor, the third resistor, the metal conductor and the ground component form a π-type attenuation network.

5. The radio frequency test socket according to claim 3, characterized in that: The plurality of resistors include a first resistor, a second resistor, and a third resistor, wherein the second resistor is located between the first resistor and the third resistor, one end of the second resistor is in contact with the first resistor, and the other end of the second resistor is in contact with the third resistor; the second resistor is connected to the metal conductor; When the RF test socket is in the first state, the second resistor is connected to the ground component through the metal conductor, and the first resistor, the second resistor, the third resistor, the metal conductor and the ground component form a T-type attenuation network.

6. The radio frequency test socket according to claim 2, characterized in that: The radio frequency test socket further includes a first insulating layer, which is disposed between the first electrical contact component and the metal conductor.

7. The radio frequency test socket according to claim 1, characterized in that: The radio frequency test socket has an output end, and the radio frequency test socket further includes a third electrical contact component, and the third electrical contact component is connected to the output end of the radio frequency test socket; When the RF test socket is in the second state, the first electrical contact component contacts the third electrical contact component, and the input end of the RF test socket is connected to the output end of the RF test socket through the first electrical contact component and the third electrical contact component.

8. The radio frequency test socket according to any one of claims 1 to 7, characterized in that: The radio frequency test socket has a test end, and the radio frequency test socket further includes a second electrical contact component, and the second electrical contact component is connected to the test end of the radio frequency test socket; The impedance module is disposed in a target area of ​​the first electrical contact component, and the impedance module contacts the target area of ​​the first electrical contact component; the target area is an area of ​​the first electrical contact component facing the second electrical contact component; When the RF test socket is in the first state, the second electrical contact component contacts the impedance module, and the input end of the RF test socket is connected to the test end of the RF test socket through the first electrical contact component, the impedance module and the second electrical contact component.

9. The radio frequency test socket according to any one of claims 1 to 5, characterized in that: The first electrical contact component includes a first metal spring and a second metal spring, the first metal spring and the second metal spring are connected to the input end of the radio frequency test socket; the impedance module is arranged on the second metal spring.

10. The radio frequency test socket according to claim 9, characterized in that: The first metal dome includes a first part and a second part, and the first part of the first metal dome is connected to the input end of the radio frequency test socket; In a case where the RF test socket further includes a third electrical contact component and the third electrical contact component is connected to the output end of the RF test socket, when the RF test socket is in the second state, the first portion of the first metal dome contacts the second portion of the first metal dome, and the second portion of the first metal dome contacts the third electrical contact component.

11. The radio frequency test socket according to claim 9 or 10, characterized in that: The RF test socket further includes a second electrical contact component, the second electrical contact component including a second insulating layer and a metal probe, the second insulating layer covers a portion of the surface of the metal probe, and the end of the metal probe toward the first electrical contact component extends from the second insulating layer; Wherein, when the RF test socket is in the first state, the end of the metal probe contacts the impedance module, and the second insulating layer contacts the first metal spring; When the radio frequency test socket is in the third state, the first metal spring contacts the end of the metal probe.

12. An electronic device, characterized in that: include: A radio frequency module, an antenna module, and a radio frequency test socket according to any one of claims 1 to 11; the input end of the radio frequency test socket is connected to the radio frequency module, and the output end of the radio frequency test socket is connected to the antenna module.

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