Wafer surface protection method based on UV energy regulation and control

Abstract

The invention provides a wafer surface protection method based on UV energy regulation and control. The wafer surface protection method based on UV energy regulation and control comprises the steps that a, an ultraviolet light source with adjustable power output is provided, b, a control system is provided, the energy output of the ultraviolet light source can be accurately regulated by the control system according to the environment temperature and the wafer surface reaction condition, and the energy output of the ultraviolet light source can be accurately regulated by the control system according to the environment temperature and the wafer surface reaction condition. And c, placing the surface of the wafer in an irradiation range of an ultraviolet light source. According to the wafer surface protection method based on UV energy regulation and control, energy output and irradiation time of ultraviolet light can be accurately controlled, so that the problems of wafer surface microstructure change and material degradation caused by too high ultraviolet light energy are effectively avoided. By adjusting the ultraviolet irradiation intensity, the wafer surface reaction rate and the environment temperature through a real-time monitoring system, the stability and the uniformity in the ultraviolet irradiation process are ensured, so that a uniform and stable protection layer is formed on the surface of the wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer surface protection, and in particular to a wafer surface protection method based on UV energy regulation. Background Art

[0002] The wafer surface protection method based on UV energy regulation uses ultraviolet (UV) light to regulate the protective layer on the wafer surface. The basic structure of this method includes: a UV light source, a wafer surface, a protective material and a regulation device. First, the UV light source emits ultraviolet light of a specific wavelength and irradiates the wafer surface. During the irradiation process, this ultraviolet light promotes chemical reactions or physical changes in the protective material through interaction with the protective material, thereby forming an effective protective layer for the wafer. The regulation device can adjust the energy intensity and irradiation time of the UV light according to demand to accurately control the thickness, uniformity and durability of the protective layer. This method is suitable for various semiconductor wafers that need surface protection, especially in precision manufacturing processes, to effectively prevent surface contamination and scratches.

[0003] While wafer surface protection methods based on UV energy regulation offer advantages in terms of protection effectiveness and process control, the system also has some drawbacks. UV light exposure can damage certain sensitive materials, especially under high-energy UV light, which can easily lead to material degradation or changes in the wafer surface microstructure. Uniformity and control of UV light exposure time are crucial to ensuring the quality of the protective layer. However, due to environmental factors such as light source stability and external temperature fluctuations, the system struggles to maintain long-term stable exposure, resulting in fluctuations in the quality of the protective layer. Summary of the Invention

[0004] In response to the shortcomings of the existing technology, the present invention provides a wafer surface protection method based on UV energy regulation, which solves the problem of easily causing material degradation or changes in the microstructure of the wafer surface; due to environmental factors such as light source stability and external temperature changes, it is difficult for the system to maintain long-term stable irradiation effects, resulting in fluctuations in the quality of the protective layer.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solutions: a wafer surface protection method based on UV energy regulation, comprising:

[0006] a. Providing a UV light source, the UV light source having an adjustable power output;

[0007] b. Provide a control system that can accurately adjust the energy output of the UV light source according to the ambient temperature and the wafer surface reaction;

[0008] c. placing the wafer surface within the irradiation range of the ultraviolet light source, wherein the surface of the wafer is a semiconductor material or a glass material;

[0009] d. Under the regulation of the control system, select the appropriate UV light energy and irradiation time to make the UV light react chemically or physically with the protective material on the wafer surface to form a protective layer;

[0010] e. Monitor the UV light intensity and the reaction rate on the wafer surface through a real-time monitoring system to ensure UV light uniformity and stability;

[0011] f. Based on the monitoring results, adjust the UV irradiation time and energy to ensure the stability of the protective layer quality and avoid excessive energy causing microstructural changes on the wafer surface or material degradation;

[0012] g. Real-time adjustment of the light source stability to ensure that the output power of the UV light source is within the specified range and reduce the impact of external temperature changes on the UV light irradiation effect;

[0013] h. Adjust the ambient temperature through the temperature control device to ensure the consistency of the quality of the protective layer;

[0014] i. A protective layer formed on the wafer surface to protect the wafer surface from external contamination and damage;

[0015] j. During the protective layer formation process, the feedback regulation module is used to adjust the UV irradiation time and energy to ensure the consistency and stability of the protective layer on the wafer surface;

[0016] k. Real-time adjustment of the UV irradiation process is achieved through an automated feedback system to optimize the formation of the protective layer and avoid quality fluctuations caused by uneven irradiation;

[0017] l. Ensure the durability and high efficiency of the protective layer through long-term stable irradiation.

[0018] Preferably, the ultraviolet light source is a high-stability UV lamp or a laser with a power output range of 10mW to 500mW, and the protective material is a photosensitive resin film that can form a protective layer under ultraviolet light irradiation.

[0019] Preferably, the temperature control device is an adjustable environmental temperature control system, which can maintain the temperature in the range of 20°C to 25°C to reduce the impact of temperature fluctuations on the ultraviolet light irradiation effect.

[0020] Preferably, the wavelength range of the ultraviolet light source is 200nm to 400nm, and it can adjust ultraviolet light of different wavelengths to meet the needs of different protective materials. The feedback adjustment module monitors the wafer surface temperature, light intensity and material reaction rate through sensors, and adjusts the ultraviolet light irradiation parameters through the control system.

[0021] Preferably, the thickness of the protective layer is controlled between 1 μm and 10 μm, and has excellent uniformity, ensuring that there are no obvious defects on the wafer surface.

[0022] Preferably, the control system further comprises:

[0023] An ultraviolet light source power adjustment module, used to adjust the power output of the ultraviolet light source;

[0024] An environmental temperature control module, used to adjust and maintain the ambient temperature of the wafer within a preset range in real time;

[0025] The real-time feedback adjustment module is used to dynamically adjust the time and energy of ultraviolet light irradiation according to the reaction conditions on the wafer surface.

[0026] Preferably, the irradiation intensity of the ultraviolet light source can be 50mJ / cm 2 Up to 500mJ / cm 2 The range can be precisely adjusted to suit the needs of different protective materials and the different reaction characteristics of the wafer surface.

[0027] Preferably, the temperature control device includes:

[0028] Temperature sensor, used to monitor the temperature of the wafer surface and its surrounding environment;

[0029] An adjustable fan or heater is used to maintain the temperature within the desired range to ensure stable UV radiation.

[0030] The present invention provides a wafer surface protection method based on UV energy regulation. It has the following beneficial effects:

[0031] This wafer surface protection method, based on UV energy regulation, precisely controls the UV light output and exposure time, effectively preventing microstructural changes and material degradation on the wafer surface caused by excessive UV light energy. By regulating UV light intensity, wafer surface reaction rate, and ambient temperature through a real-time monitoring system, the stability and uniformity of the UV light exposure process are ensured, forming a uniform and stable protective layer on the wafer surface. This protective layer effectively prevents contamination, damage, or physical changes caused by external factors during subsequent processing, ensuring long-term performance stability.

[0032] The present invention solves the problem of fluctuations in the quality of the protective layer due to changes in the external environment, such as light source stability and temperature fluctuations, by introducing a number of optimization measures. Specifically, through the synergistic effect of the ultraviolet light source power adjustment module and the temperature control device, the output power of the ultraviolet light source and the ambient temperature can be adjusted in real time to reduce the impact of temperature fluctuations and changes in the external environment on the ultraviolet light irradiation effect. In addition, the control system can dynamically adjust the ultraviolet light irradiation time and energy in real time according to the reaction conditions on the wafer surface to ensure the consistency and stability of the protective layer. This method can maintain the excellent performance of the protective layer during long-term stable irradiation and avoid quality instability caused by light source aging or environmental fluctuations. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a schematic diagram of the process of the present invention. DETAILED DESCRIPTION

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0035] like Figure 1 As shown, an embodiment of the present invention provides a wafer surface protection method based on UV energy regulation, including: a. providing an ultraviolet light source, the ultraviolet light source has an adjustable power output, the ultraviolet light source is a high-stability UV lamp or a laser, the power output range is 10mW to 500mW, the protective material is a photosensitive resin, a polymer film or a metal oxide film, which can form a protective layer under ultraviolet light irradiation, the wavelength range of the ultraviolet light source is 200nm to 400nm, and ultraviolet light of different wavelengths can be adjusted to meet the needs of different protective materials, the feedback regulation module monitors the wafer surface temperature, light intensity and material reaction rate through sensors, and adjusts the ultraviolet light irradiation parameters through a control system, and the irradiation intensity of the ultraviolet light source can be within 50mJ / cm 2 Up to 500mJ / cm 2 The range can be precisely adjusted to suit the needs of different protective materials and the different reaction characteristics of the wafer surface.

[0036] b. Provide a control system that can accurately adjust the energy output of the UV light source based on the ambient temperature and the wafer surface reaction conditions, the control system further comprising:

[0037] The ultraviolet light source power adjustment module is used to adjust the power output of the ultraviolet light source.

[0038] The ambient temperature control module is used to adjust and maintain the ambient temperature of the wafer within a preset range in real time.

[0039] The real-time feedback adjustment module is used to dynamically adjust the time and energy of ultraviolet light irradiation according to the reaction conditions on the wafer surface.

[0040] c. Pre-treating the wafer surface, including cleaning and surface roughening steps, to remove surface contaminants, particles, and organic matter and optimize the adhesion of the protective material. Plasma treatment can be used during the pre-treatment process, and the wafer surface is placed within the irradiation range of an ultraviolet light source. The surface of the wafer is a semiconductor material or a glass material.

[0041] d. Under the regulation of the control system, select the appropriate UV light energy and irradiation time to make the UV light react chemically or physically with the protective material on the wafer surface to form a protective layer.

[0042] e. Through the real-time monitoring system, the UV light intensity and the reaction rate of the wafer surface are monitored to ensure the uniformity and stability of UV light irradiation.

[0043] f. Based on the monitoring results, adjust the UV light exposure time and energy to ensure the stability of the quality of the protective layer and avoid excessive energy causing microstructural changes on the wafer surface or material degradation.

[0044] g. Adjust the light source stability in real time to ensure that the output power of the UV light source is within the specified range, reduce the impact of external temperature changes on the UV light irradiation effect, optimize the wafer surface reaction temperature, and accurately control the wafer surface temperature through the temperature control system to ensure that the protective material can react evenly under UV light irradiation, avoiding defects or instability in the protective layer due to excessively high or low temperatures.

[0045] h. The ambient temperature is regulated by a temperature control device to ensure the consistency of the quality of the protective layer. The temperature control device is an adjustable ambient temperature control system that can maintain a temperature range of 20°C to 25°C to reduce the impact of temperature fluctuations on the UV irradiation effect. The temperature control device includes:

[0046] Temperature sensors are used to monitor the temperature of the wafer surface and its surrounding environment.

[0047] An adjustable fan or heater is used to maintain the temperature within the desired range to ensure stable UV radiation.

[0048] i. The protective layer formed on the wafer surface protects the wafer surface from external contamination and damage. The thickness of the protective layer is controlled between 1μm and 10μm, and its uniformity is excellent, ensuring that there are no obvious defects on the wafer surface. The performance of the protective layer is tested using an optical microscope and a scanning electron microscope to test the thickness, uniformity, and adhesion of the protective layer to ensure that the protective layer meets the expected requirements.

[0049] j. During the protective layer formation process, the feedback regulation module is used to adjust the UV light irradiation time and energy to ensure the consistency and stability of the protective layer on the wafer surface.

[0050] k. Real-time adjustment of the UV irradiation process is achieved through an automated feedback system to optimize the formation of the protective layer and avoid quality fluctuations caused by uneven irradiation.

[0051] l. Ensure the durability and high efficiency of the protective layer through long-term stable irradiation.

[0052] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A wafer surface protection method based on UV energy regulation, characterized in that: include: a. Providing a UV light source, the UV light source having an adjustable power output; b. Provide a control system that can accurately adjust the energy output of the UV light source according to the ambient temperature and the wafer surface reaction; c. placing the wafer surface within the irradiation range of the ultraviolet light source, wherein the surface of the wafer is a semiconductor material or a glass material; d. Under the regulation of the control system, select the appropriate UV light energy and irradiation time to make the UV light react chemically or physically with the protective material on the wafer surface to form a protective layer; e. Monitor the UV light intensity and the reaction rate on the wafer surface through a real-time monitoring system to ensure UV light uniformity and stability; f. Based on the monitoring results, adjust the UV irradiation time and energy to ensure the stability of the protective layer quality and avoid excessive energy causing microstructural changes on the wafer surface or material degradation; g. Real-time adjustment of the light source stability to ensure that the output power of the UV light source is within the specified range and reduce the impact of external temperature changes on the UV light irradiation effect; h. Adjust the ambient temperature through the temperature control device to ensure the consistency of the quality of the protective layer; i. A protective layer formed on the wafer surface to protect the wafer surface from external contamination and damage; j. During the protective layer formation process, the feedback regulation module is used to adjust the UV irradiation time and energy to ensure the consistency and stability of the protective layer on the wafer surface; k. Real-time adjustment of the UV irradiation process is achieved through an automated feedback system to optimize the formation of the protective layer and avoid quality fluctuations caused by uneven irradiation; l. Ensure the durability and high efficiency of the protective layer through long-term stable irradiation.

2. The wafer surface protection method based on UV energy regulation according to claim 1, characterized in that: The ultraviolet light source is a high-stability UV lamp or laser with a power output range of 10mW to 500mW. The protective material is a photosensitive resin, a polymer film or a metal oxide film, which can form a protective layer under ultraviolet light irradiation.

3. The wafer surface protection method based on UV energy regulation according to claim 1, characterized in that: The temperature control device is an adjustable environmental temperature control system that can maintain a temperature range of 20°C to 25°C to reduce the impact of temperature fluctuations on the ultraviolet light irradiation effect.

4. The wafer surface protection method based on UV energy regulation according to claim 1, characterized in that: The wavelength range of the ultraviolet light source is 200nm to 400nm, and it can adjust ultraviolet light of different wavelengths to meet the needs of different protective materials. The feedback adjustment module monitors the wafer surface temperature, light intensity and material reaction rate through sensors, and adjusts the ultraviolet light irradiation parameters through the control system.

5. The wafer surface protection method based on UV energy regulation according to claim 1, characterized in that: The thickness of the protective layer is controlled between 1 μm and 10 μm, and has excellent uniformity, ensuring that there are no obvious defects on the wafer surface.

6. The wafer surface protection method based on UV energy regulation according to claim 1, characterized in that: The control system further comprises: An ultraviolet light source power adjustment module, used to adjust the power output of the ultraviolet light source; An environmental temperature control module, used to adjust and maintain the ambient temperature of the wafer within a preset range in real time; The real-time feedback adjustment module is used to dynamically adjust the time and energy of ultraviolet light irradiation according to the reaction conditions on the wafer surface.

7. The wafer surface protection method based on UV energy regulation according to claim 1, characterized in that: The irradiation intensity of the ultraviolet light source can be 50mJ / cm 2 Up to 500mJ / cm 2 The range can be precisely adjusted to suit the needs of different protective materials and the different reaction characteristics of the wafer surface.

8. The wafer surface protection method based on UV energy regulation according to claim 1, characterized in that: The temperature control device comprises: Temperature sensor, used to monitor the temperature of the wafer surface and its surrounding environment; An adjustable fan or heater is used to maintain the temperature within the desired range to ensure stable UV radiation.

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