A semiconductor laser element with a spin polarization sublayer

Abstract

This invention proposes a semiconductor laser device with a spin-polarized sublayer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. This invention establishes a multi-layered spin-polarized sublayer structure between the upper confinement layer and the upper waveguide layer in the semiconductor laser device, and defines the electron mobility distribution and piezoelectric polarization coefficient distribution characteristics of each spin-polarized sublayer. The specific electron mobility distribution and piezoelectric polarization coefficient distribution of the spin-polarized sublayer form an asymmetric discrete potential barrier, modulating the polarization of the lattice distortion structure, increasing the net accumulation of charge dipole momentum, controlling the piezoelectric polarization effect of the active layer, suppressing the quantum confinement Stark effect, reducing the band tilt of the active layer, reducing the hole injection band order, increasing the overlap probability of electron-hole wave functions, and improving the internal quantum efficiency.

Description

Technical Field

[0001] This application relates to the field of semiconductor optoelectronic devices, and more particularly to a semiconductor laser element having a spin polarization layer. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] Lasers and nitride semiconductor light-emitting diodes (LEDs) differ significantly:

[0004] 1) Lasers are generated by stimulated emission of charge carriers. They have a small half-width at half-maximum and very high brightness. The output power of a single laser can be in the W range. In contrast, nitride semiconductor light-emitting diodes are spontaneously emitted, and the output power of a single light-emitting diode is in the mW range.

[0005] 2) The operating current density of lasers reaches KA / cm2, which is more than two orders of magnitude higher than that of nitride light-emitting diodes. This results in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more severe electron-hole mismatch, leading to more severe efficiency degradation and the Droop effect.

[0006] 3) Light-emitting diodes emit spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence. In contrast, lasers emit stimulated transition radiation, where the energy of the induced photon should be equal to the energy difference of the electron transition, producing coherent light that is identical to the induced photon.

[0007] 4) Different principles: Light emission diodes emit light by electrons and holes jumping to quantum wells or pn junctions under the action of external voltage, generating radiative recombination. Lasers, on the other hand, require certain lasing conditions to be met before they can emit light. This requires the carriers in the active region to be reversed, the stimulated emission light to oscillate back and forth in the resonant cavity, and the propagation in the gain medium to amplify the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) The lattice mismatch and large strain of the active layer induce a strong piezoelectric polarization effect, which generates a strong QCSE quantum confinement Stark effect, limiting the improvement of laser electromass gain;

[0010] 2) The optical waveguide has high absorption loss. The inherent carbon impurities in the p-type semiconductor will compensate for the acceptor and destroy the p-type. The ionization rate of p-type doping is low. A large number of unionized Mg acceptor impurities will lead to an increase in internal optical loss. In addition, the refractive index dispersion and confinement factor of the laser decrease with increasing wavelength, resulting in a decrease in the mode gain of the laser.

[0011] 3) p-type semiconductors have high Mg acceptor activation energy and low ionization efficiency. The hole concentration is much lower than the electron concentration and the hole mobility is much lower than the electron mobility. In addition, the quantum well polarization electric field raises the hole injection barrier and causes hole overflow from the active layer. Hole injection is uneven and inefficient, resulting in severe electron-hole asymmetry and mismatch in the quantum well. Electron leakage and carrier delocalization make hole transport in the quantum well more difficult, and the carrier injection is uneven. This leads to uneven gain. At the same time, the laser gain spectrum becomes wider and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in slope efficiency.

[0012] 4) The increased band gap in the valence band of the laser makes it more difficult for holes to transport in the quantum well, resulting in non-uniform carrier injection and non-uniform gain. Summary of the Invention

[0013] To address one of the aforementioned technical problems, the present invention provides a semiconductor laser element having a spin polarization sublayer.

[0014] This invention provides a semiconductor laser device with a spin polarization sublayer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. A spin polarization sublayer is disposed between the upper confinement layer and the upper waveguide layer. The spin polarization sublayer includes, from bottom to top, a first spin polarization sublayer, a second spin polarization sublayer, and a third spin polarization sublayer. The first spin polarization sublayer, the second spin polarization sublayer, and the third spin polarization sublayer all have electron mobility distribution characteristics and piezoelectric polarization coefficient distribution characteristics.

[0015] The electron mobility of the first spin-polarized sublayer has the function y1 = A + B*x1 2 The electron mobility of the second spin-polarized sublayer is given by the curve distribution of sinx1, which has the function y2=C+D*e. -x2 The electron mobility of the third spin-polarized sublayer has a curve distribution of +U*x2-1, and the function y3=F+E*lnx3-T*x3+1 in the first quadrant.

[0016] The piezoelectric polarization coefficient of the first spin-polarized sublayer has a distribution of the function y4 = G + H * tanx1; the piezoelectric polarization coefficient of the second spin-polarized sublayer has a distribution of the function y5 = I + J * e x2-R*x2-1 curve distribution; the piezoelectric polarization coefficient of the third spin polarization sublayer has a first quadrant curve distribution of the function y6=K+L*lnx3-S*x3+1;

[0017] Where x1 is the depth from the first spin polarization sublayer to the second spin polarization sublayer, x2 is the depth from the second spin polarization sublayer to the third spin polarization sublayer, and x3 is the depth from the third spin polarization sublayer to the upper confinement layer.

[0018] Preferably, the electron mobility of the first spin polarized sublayer is d, the electron mobility of the second spin polarized sublayer is e, and the electron mobility of the third spin polarized sublayer is f, where: 10 (cm2 / Vsec) < e < f < d < 20000 (cm2 / Vsec).

[0019] Preferably, the piezoelectric polarization coefficient of the first spin polarized sublayer is g, the piezoelectric polarization coefficient of the second spin polarized sublayer is h, and the piezoelectric polarization coefficient of the third spin polarized sublayer is i, where: 0.2 < h < i < g < 25.

[0020] Preferably, the first spin polarization sublayer, the second spin polarization sublayer, and the third spin polarization sublayer also have polarization optical phonon energy distribution characteristics and spontaneous polarization coefficient distribution characteristics.

[0021] The polarized optical phonon energy of the first spin-polarized sublayer has a curve distribution of the function y7 = M + N * cotx1, and the polarized optical phonon energy of the second spin-polarized sublayer has a function y8 = ax2. 2 The curve distribution is +bx2+c, where a < 0, and the polarization optical phonon energy of the third spin polarization sublayer has the function y9 = mx3. 2 The curve distribution is given by +nx3+p, where m>0;

[0022] The spontaneous polarization coefficient of the first spin-polarized sublayer has a function y 10 =P+Q*cotx1 curve distribution, the spontaneous polarization coefficient of the second spin polarized sublayer has a function y 11 =qx2 2 The +rx2+s curve distribution, where q < 0, indicates that the spontaneous polarization coefficient of the third spin polarization sublayer has a function y 12 =tx3 2 The +ux3+v curve distribution, where t>0.

[0023] Preferably, the polarization optical phonon energy of the first spin polarization sublayer is j, the polarization optical phonon energy of the second spin polarization sublayer is k, and the polarization optical phonon energy of the third spin polarization sublayer is l, wherein: 20 (meV) < j < l < k < 800 (meV).

[0024] Preferably, the spin-polarized sublayer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, Y2NiMnO6, SnO2, Mo6V9O 40 Any one or any combination of NaMnO2:Ti, LaAlO3, KTaO3, 2D-MoS2@3D-LiFePO4, 2D-WS2@3D-Ta2Pd3Se8, 2D-MnO3@3D-Ta2Pt3Se8, 2D-WTe2@3D-CoSe2, and 2D-CdSe@3D-CdS.

[0025] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, with a period number of 1 to 3. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 angstroms to 100 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 angstroms to 150 angstroms.

[0026] Preferably, the lower confining layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 nm to 5000 nm and a Si doping concentration of 1E18 cm⁻¹. -3 Up to 1E20cm -3 ;

[0027] The upper confinement layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 Up to 1E20cm -3 .

[0028] Preferably, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 nm to 1000 nm and a Si doping concentration of 1E16 cm⁻¹. -3 Up to 5E19 cm -3 .

[0029] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, or sapphire / SiN composite substrate. x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0030] The beneficial effects of this invention are as follows: This invention sets up a multi-layered spin-polarized sublayer in a semiconductor laser element and defines the electron mobility distribution and piezoelectric polarization coefficient distribution characteristics of each spin-polarized sublayer. The specific electron mobility distribution and piezoelectric polarization coefficient distribution of the spin-polarized sublayer form an asymmetric discrete potential barrier, modulating the polarization of the lattice distortion structure, increasing the net accumulation of charge dipole momentum, controlling the piezoelectric polarization effect of the active layer, suppressing the quantum confinement Stark effect, reducing the band tilt of the active layer, reducing the hole injection band order, increasing the overlap probability of electron-hole wave functions, and improving the internal quantum efficiency. Attached Figure Description

[0031] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0032] Figure 1 This is a schematic diagram of the structure of a semiconductor laser element with a spin polarization sublayer according to an embodiment of the present invention;

[0033] Figure 2 This is a SIMS secondary ion mass spectrum of a semiconductor laser element with a spin polarization sublayer as described in an embodiment of the present invention.

[0034] Figure label:

[0035] 100. Substrate; 101. Lower confinement layer; 102. Lower waveguide layer; 103. Active layer; 104. Upper waveguide layer; 105. Upper confinement layer; 106. Spin polarization sublayer.

[0036] 106a, first spin polarization sublayer; 106b, second spin polarization sublayer; 106c, third spin polarization sublayer. Detailed Implementation

[0037] To make the technical solutions and advantages of the embodiments of this application clearer, the exemplary embodiments of this application will be described in further detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not an exhaustive list of all embodiments. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0038] like Figure 1 and Figure 2 As shown, this embodiment proposes a semiconductor laser element with a spin polarization sublayer, comprising a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 arranged sequentially from bottom to top. A spin polarization sublayer 106 is also provided in this semiconductor laser element with a spin polarization sublayer.

[0039] Specifically, in this embodiment, the semiconductor laser element with a spin polarization sublayer is provided from bottom to top as follows: substrate 100, lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, and upper confinement layer 105. A spin polarization sublayer 106 is disposed between the upper confinement layer 105 and the upper waveguide layer 104. This spin polarization sublayer 106 has a multilayer structure, specifically including a first spin polarization sublayer 106a, a second spin polarization sublayer 106b, and a third spin polarization sublayer 106c, which are arranged sequentially from bottom to top. Each of the first spin-polarized sublayer 106a, the second spin-polarized sublayer 106b, and the third spin-polarized sublayer 106c contains specific physical properties, specifically electron mobility distribution characteristics and piezoelectric polarization coefficient distribution characteristics, as detailed below:

[0040] Electron mobility distribution:

[0041] The electron mobility of the first spin-polarized sublayer 106a has the function y1 = A + B*x1 2 / sinx1 curve distribution;

[0042] The electron mobility of the second spin-polarized sublayer 106b has the function y2 = C + D*e -x2 +U*x2-1 curve distribution;

[0043] The electron mobility of the third spin-polarized sublayer 106c has a first quadrant curve distribution of the function y3=F+E*lnx3-T*x3+1;

[0044] Piezoelectric polarization coefficient distribution:

[0045] The piezoelectric polarization coefficient of the first spin-polarized sublayer 106a has a function y4=G+H*tanx1 curve distribution;

[0046] The piezoelectric polarization coefficient of the second spin-polarized sublayer 106b has the function y5=I+J*e x2 -R*x²-1 curve distribution;

[0047] The piezoelectric polarization coefficient of the third spin-polarized sublayer 106c has a first quadrant curve distribution of the function y6=K+L*lnx3-S*x3+1.

[0048] Where x1 is the depth from the first spin polarization sublayer 106a toward the second spin polarization sublayer 106b, x2 is the depth from the second spin polarization sublayer 106b toward the third spin polarization sublayer 106c, and x3 is the depth from the third spin polarization sublayer 106c toward the upper confinement layer 105.

[0049] In this embodiment, a multi-layered spin-polarized sublayer 106 is formed in the semiconductor laser element, and the electron mobility distribution and piezoelectric polarization coefficient distribution characteristics of each spin-polarized sublayer 106 are defined. The specific electron mobility distribution and piezoelectric polarization coefficient distribution of the spin-polarized sublayer 106 form an asymmetric discrete potential barrier, modulate the polarization of the lattice distortion structure, increase the net accumulation of charge dipole momentum, regulate the piezoelectric polarization effect of the active layer 103, suppress the quantum confinement Stark effect, reduce the band tilt of the active layer 103, reduce the hole injection band order, increase the overlap probability of electron-hole wave functions, and improve the internal quantum efficiency.

[0050] In some optional embodiments, the electron mobility in the first spin polarized sublayer 106a, the second spin polarized sublayer 106b, and the third spin polarized sublayer 106c also have a certain magnitude relationship, specifically: the electron mobility of the first spin polarized sublayer 106a is d, the electron mobility of the second spin polarized sublayer 106b is e, and the electron mobility of the third spin polarized sublayer 106c is f, where: 10 (cm2 / Vsec) < e < f < d < 20000 (cm2 / Vsec).

[0051] In some optional embodiments, the piezoelectric coefficients in the first spin polarization sublayer 106a, the second spin polarization sublayer 106b, and the third spin polarization sublayer 106c also have a certain magnitude relationship, specifically: the piezoelectric coefficient of the first spin polarization sublayer 106a is g, the piezoelectric coefficient of the second spin polarization sublayer 106b is h, and the piezoelectric coefficient of the third spin polarization sublayer 106c is i, where: 0.2 < h < i < g < 25.

[0052] In some optional embodiments, the first spin polarization sublayer 106a, the second spin polarization sublayer 106b, and the third spin polarization sublayer 106c also possess polarization optical phonon energy distribution characteristics and spontaneous polarization coefficient distribution characteristics, as specifically shown below:

[0053] Polarized optical phonon energy distribution:

[0054] The polarized optical phonon energy of the first spin polariton layer 106a has a function y7 = M + N*cotx1 curve distribution;

[0055] The polarization optical phonon energy of the second spin polariton layer 106b has the function y8 = ax2. 2 The curve distribution is given by +bx2+c, where a < 0;

[0056] The polarized optical phonon energy of the third spin polariton layer 106c has the function y9 = mx3. 2 The curve distribution is given by +nx3+p, where m>0;

[0057] Spontaneous polarization coefficient distribution:

[0058] The spontaneous polarization coefficient of the first spin-polarized sublayer 106a has a function y 10 =P + Q * cotx1 curve distribution;

[0059] The spontaneous polarization coefficient of the second spin-polarized sublayer 106b has a function y 11 =qx2 2 The curve distribution is given by +rx2+s, where q < 0;

[0060] The spontaneous polarization coefficient of the third spin-polarized sublayer 106c has a function y 12 =tx3 2 The +ux3+v curve distribution, where t>0.

[0061] In this embodiment, specific polarization optical phonon energy distribution characteristics and spontaneous polarization coefficient distribution characteristics are designed in each spin-polarized sublayer 106. The specific electron mobility distribution and spontaneous polarization coefficient distribution of the spin-polarized sublayer 106 form fast coherent spin exchange and spin-orbit splitting, improve valley spin splitting and spin-polarized hole concentration, improve and reduce the valence band step difference of the laser, improve carrier transport efficiency and tunneling probability, improve electron and hole transport efficiency and injection efficiency into the active layer 103, thereby improving the radiative recombination efficiency of the active layer 103 of the laser element, reducing the excitation threshold of the laser element, and improving the mode gain, peak gain, optical power and slope efficiency of the laser element.

[0062] In some optional embodiments, the polarization optical phonon energies in the first spin polarization sublayer 106a, the second spin polarization sublayer 106b, and the third spin polarization sublayer 106c also have a certain magnitude relationship, specifically: the polarization optical phonon energy of the first spin polarization sublayer 106a is j, the polarization optical phonon energy of the second spin polarization sublayer 106b is k, and the polarization optical phonon energy of the third spin polarization sublayer 106c is l, where: 20 (meV) < j < l < k < 800 (meV).

[0063] In some optional embodiments, the spin-polarized sublayer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, Y2NiMnO6, SnO2, Mo6V9O 40 Any one or any combination of NaMnO2:Ti, LaAlO3, KTaO3, 2D-MoS2@3D-LiFePO4, 2D-WS2@3D-Ta2Pd3Se8, 2D-MnO3@3D-Ta2Pt3Se8, 2D-WTe2@3D-CoSe2, and 2D-CdSe@3D-CdS.

[0064] In some optional embodiments, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 1 to 3. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 angstroms to 100 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 angstroms to 150 angstroms.

[0065] In some optional embodiments, the lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 nm to 5000 nm and a Si doping concentration of 1E18 cm⁻¹. -3 Up to 1E20cm -3 .

[0066] In some alternative embodiments, the upper confinement layer 105 is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 Up to 1E20cm -3 .

[0067] In some optional embodiments, the lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 nm to 1000 nm and a Si doping concentration of 1E16 cm⁻¹. -3 Up to 5E19 cm -3 .

[0068] In some alternative embodiments, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0069] The table below compares the parameters of a conventional semiconductor laser element and the semiconductor laser element with a spin polarization sublayer proposed in this embodiment, including slope efficiency, threshold current density, and optical power, highlighting the differences between the two:

[0070]

[0071]

[0072] As can be seen, the semiconductor laser element with spin polarization sublayer proposed in this embodiment improves slope efficiency and optical power and reduces threshold current density compared with traditional semiconductor laser elements, showing significant advantages over traditional semiconductor laser elements.

[0073] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A semiconductor laser device having a spin polarization sublayer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, characterized in that, A spin polarization sublayer is disposed between the upper confinement layer and the upper waveguide layer. The spin polarization sublayer includes a first spin polarization sublayer, a second spin polarization sublayer, and a third spin polarization sublayer disposed sequentially from bottom to top. The first spin polarization sublayer, the second spin polarization sublayer, and the third spin polarization sublayer all have electron mobility distribution characteristics and piezoelectric polarization coefficient distribution characteristics. The electron mobility of the first spin-polarization sublayer has a function y1=A+B*x1 2 sinx1 curve distribution, the electron mobility of the second spin-polarization sublayer has a function y2=C+D*e -x2 +U*x2-1 curve distribution, the electron mobility of the third spin-polarization sublayer has a function y3=F+E*lnx3-T*x3+1 first quadrant curve distribution; The electron mobility of the first spin-polarized sublayer is d, the electron mobility of the second spin-polarized sublayer is e, and the electron mobility of the third spin-polarized sublayer is f, where: 10 cm² / Vsec < e < f < d < 20000 cm² / Vsec; The piezoelectric polarization coefficient of the first spin polarization sub-layer has a function y4=G+H*tanx1 curve distribution; the piezoelectric polarization coefficient of the second spin polarization sub-layer has a function y5=I+J*e x2 -R*x2-1 curve distribution; the piezoelectric polarization coefficient of the third spin polarization sub-layer has a function y6=K+L*lnx3-S*x3+1 first quadrant curve distribution; Where x1 is the depth from the first spin polarization sublayer to the second spin polarization sublayer, x2 is the depth from the second spin polarization sublayer to the third spin polarization sublayer, and x3 is the depth from the third spin polarization sublayer to the upper confinement layer.

2. The semiconductor laser element with a spin polarization sublayer according to claim 1, characterized in that, The piezoelectric polarization coefficient of the first spin polarized sublayer is g, the piezoelectric polarization coefficient of the second spin polarized sublayer is h, and the piezoelectric polarization coefficient of the third spin polarized sublayer is i, where: 0.2 < h < i < g < 25.

3. The semiconductor laser element with a spin polarization sublayer according to claim 1, characterized in that, The first spin polarization sublayer, the second spin polarization sublayer, and the third spin polarization sublayer also possess polarization optical phonon energy distribution characteristics and spontaneous polarization coefficient distribution characteristics; The polarized optical phonon energy of the first spin-polarized sublayer has a curve distribution of the function y7=M+N*cotx1, and the polarized optical phonon energy of the second spin-polarized sublayer has a function y8=ax2. 2 The curve distribution is +bx2+c, where a < 0, and the polarization optical phonon energy of the third spin polarization sublayer has the function y9 = mx3. 2 The curve distribution is given by +nx3+p, where m>0; The spontaneous polarization coefficient of the first spin-polarized sublayer has a function y 10 =P+Q*cotx1 curve distribution, the spontaneous polarization coefficient of the second spin polarized sublayer has a function y 11 =qx2 2 The +rx2+s curve distribution, where q < 0, indicates that the spontaneous polarization coefficient of the third spin polarization sublayer has a function y 12 =tx3 2 The +ux3+v curve distribution, where t>0.

4. The semiconductor laser element with a spin polarization sublayer according to claim 3, characterized in that, The polarized optical phonon energy of the first spin polarized sublayer is j, the polarized optical phonon energy of the second spin polarized sublayer is k, and the polarized optical phonon energy of the third spin polarized sublayer is l, where: 20meV < j < l < k < 800meV.

5. The semiconductor laser element with a spin polarization sublayer according to claim 1, characterized in that, Preparation of ingredients such as GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP 、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlIn P、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、 AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, fuel cells, Y2NiMnO6, SnO2, Mo6V9O 40 NaMnO2:Ti、LaAlO3、KTaO3、2D-MoS2@3D-LiFePO4、2D-WS2@3D-Ta2Pd3S e8, 2D-MnO3@3D-Ta2Pt3Se8, 2D-WTe2@3D-CoSe2, 2D-CdSe@3D-CdS.

6. The semiconductor laser element with a spin polarization sublayer according to claim 1, characterized in that, The active layer is a periodic structure composed of a well layer and a barrier layer, with a period number of 1 to 3. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 angstroms to 100 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 angstroms to 150 angstroms.

7. The semiconductor laser element with a spin polarization sublayer according to claim 1, characterized in that, The lower confinement layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 nm to 5000 nm and a Si doping concentration of 1E18 cm⁻¹. -3 Up to 1E20cm -3 ; The upper confinement layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 Up to 1E20cm -3 .

8. The semiconductor laser element with a spin polarization sublayer according to claim 1, characterized in that, The lower and upper waveguide layers are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 nm to 1000 nm and a Si doping concentration of 1E16 cm⁻¹. -3 Up to 5E19 cm -3 .

9. The semiconductor laser element with a spin polarization sublayer according to claim 1, characterized in that, The substrates include sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrates, sapphire / AlN composite substrates, and sapphire / SiN composite substrates. x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

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