Semiconductor device

Abstract

A semiconductor device includes: a first conductive member having an island portion; a semiconductor element disposed on one side of the island portion in the thickness direction; and a sealing resin covering the semiconductor element and covering at least a portion of the first conductive member, the island portion including a first edge portion located on one side of a first direction orthogonal to the thickness direction and extending in a second direction orthogonal to the thickness direction and the first direction, and a second edge portion located on the other side of the first direction and extending in a second direction orthogonal to the thickness direction and the second direction. The first edge portion has a first step portion which is covered by the sealing resin and is formed at a position closer to one side of the second direction than the semiconductor element in the second direction. A portion of the first step portion on one side in the second direction is recessed further toward the other side in the first direction than a portion on the other side in the second direction.

Description

Technical Field

[0001] The present invention relates to a semiconductor device (also referred to as a semiconductor apparatus). Background Art

[0002] Various structures have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes leads, a semiconductor element, and a sealing resin. The semiconductor element is supported by the leads. The sealing resin covers a portion of the leads and the semiconductor element.

[0003] In the semiconductor device described in Patent Document 1, the semiconductor element is bonded to the wire via a bonding material. In such a semiconductor device, due to the heat generated by the semiconductor element, various parts undergo thermal expansion and contraction. The linear expansion coefficient of the sealing resin is greater than that of the semiconductor element and the wire. Due to this difference in linear expansion coefficient, relatively large stress may sometimes be applied near the periphery of the semiconductor element due to the thermal contraction of the sealing resin. In this case, there is a concern that undesirable conditions such as poor bonding of the semiconductor element and the formation of cracks in the sealing resin may occur.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2019-192751 Summary of the Invention

[0007] Technical problem to be solved by the invention

[0008] One technical problem of the present invention is to provide a semiconductor device that is an improvement over the conventional technology. The present invention has been made based on the above situation, and one technical problem is to provide a semiconductor device that is suitable for reducing stress acting near the periphery of a semiconductor element.

[0009] Technical solutions to technical problems

[0010] According to one aspect of the present invention, a semiconductor device is provided, comprising: a first conductive component having an island portion; a semiconductor element disposed on one side of the island portion in a thickness direction; and a sealing resin covering the semiconductor element and at least a portion of the first conductive component. The island portion includes a first edge portion, which is located on one side of a first direction perpendicular to the thickness direction and extends in a second direction perpendicular to the thickness direction and the first direction. The first edge portion has a first step portion, which is covered by the sealing resin and is formed in the second direction at a position closer to the second direction than the semiconductor element. The portion of the first step portion on the second direction side is recessed toward the other side of the first direction than the portion on the other side of the second direction.

[0011] Effects of the Invention

[0012] According to the above configuration, stress acting near the periphery of the semiconductor element can be reduced.

[0013] Other features and advantages of the present invention will become more apparent from the following detailed description made with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a perspective view showing a semiconductor device according to a first embodiment of the present invention.

[0015] Figure 2 It is a perspective view showing an essential part of a semiconductor device according to a first embodiment of the present invention.

[0016] Figure 3 It is a plan view showing a semiconductor device according to the first embodiment of the present invention.

[0017] Figure 4 It is a plan view of an essential part of a semiconductor device showing a first embodiment of the present invention.

[0018] Figure 5 It is a bottom view showing the semiconductor device according to the first embodiment of the present invention.

[0019] Figure 6 It is a bottom view showing an important part of the semiconductor device according to the first embodiment of the present invention.

[0020] Figure 7 It is a side view showing the semiconductor device according to the first embodiment of the present invention.

[0021] Figure 8 It is along Figure 4 Cross-sectional view along line VIII-VIII.

[0022] Figure 9 It is along Figure 4 Cross-sectional view along line IX-IX.

[0023] Figure 10 It is along Figure 4 Cross-sectional view of line XX.

[0024] Figure 11 It is along Figure 4 Cross-sectional view along line XI-XI.

[0025] Figure 12 yes Figure 4 A partial enlarged view of .

[0026] Figure 13 It is a plan view of an essential part of a semiconductor device showing a second embodiment of the present invention.

[0027] Figure 14 It is a bottom view of an important part of a semiconductor device showing a second embodiment of the present invention.

[0028] Figure 15 It is along Figure 13 Cross-sectional view along line XV-XV.

[0029] Figure 16 It is a plan view of an essential part of a semiconductor device showing a third embodiment of the present invention.

[0030] Figure 17 It is a bottom view of an essential part of a semiconductor device showing a third embodiment of the present invention.

[0031] Figure 18 It is a plan view of an essential part of a semiconductor device showing a fourth embodiment of the present invention.

[0032] Figure 19 It is a bottom view of an essential part of a semiconductor device showing a fourth embodiment of the present invention.

[0033] Figure 20 It is a plan view of an essential part of a semiconductor device showing a fifth embodiment of the present invention.

[0034] Figure 21 It is a bottom view of an essential part of a semiconductor device showing a fifth embodiment of the present invention. DETAILED DESCRIPTION

[0035] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0036] In the present invention, the terms "first", "second", "third", etc. are used only as labels and do not necessarily give a sequence to these objects.

[0037] In the present invention, “something A is formed on thing B” and “something A is formed on thing B” include “something A is directly formed on thing B” and “something A is formed on thing B with something else interposed between thing A and thing B” unless otherwise specified. Similarly, “something A is arranged on thing B” and “something A is arranged on thing B” include “something A is directly arranged on thing B” and “something A is arranged on thing B with something else interposed between thing A and thing B” unless otherwise specified. Similarly, “something A is located on thing B” include “something A is in contact with thing B and thing A is located on thing B” and “something A is located on thing B with something else interposed between thing A and thing B” unless otherwise specified. In addition, “something A overlaps with thing B when viewed in a certain direction” includes “something A completely overlaps with thing B” and “something A partially overlaps with thing B” unless otherwise specified. In addition, in the present invention, "a certain surface A faces (one side or the other side) of direction B" is not limited to the case where the angle formed by the surface A with respect to direction B is 90°, but includes the case where the surface A is inclined with respect to direction B.

[0038] First embodiment:

[0039] Figures 1 to 12 This figure shows a semiconductor device according to a first embodiment of the present invention. Semiconductor device A1 of this embodiment includes a semiconductor element 1, a first conductive component 2, a second conductive component 3, a third conductive component 4, and a sealing resin 5. The application of semiconductor device A1 is not limited in any way, and it may be used, for example, in electronic equipment including power conversion circuits such as DC-DC converters.

[0040] Figure 1 It is a perspective view of the semiconductor device A1. Figure 2 This is a perspective view of an important part of the semiconductor device A1, with the sealing resin 5 omitted. Figure 3 is a top view of the semiconductor device A1. Figure 4 This is a plan view of the main parts of the semiconductor device A1, showing the sealing resin 5 through a perspective view. Figure 5 It is a bottom view of the semiconductor device A1. Figure 6 This is a bottom view of the main part of the semiconductor device A1, showing the sealing resin 5 through the lens. Figure 7 is a side view of the semiconductor device A1. Figure 8 It is along Figure 4 Cross-sectional view along line VIII-VIII. Figure 9 It is along Figure 4 Cross-sectional view along line IX-IX. Figure 10 It is along Figure 4 Cross-sectional view of line XX. Figure 11 It is along Figure 4 Cross-sectional view along line XI-XI. Figure 12 yes Figure 4 In addition, Figure 4 and Figure 6 In FIG. 1 , the sealing resin 5 that is seen through is indicated by an imaginary line (two-dot chain line).

[0041] In these figures, for example, an example of the thickness direction of the present invention is referred to as "thickness direction z". The direction perpendicular to the thickness direction z ( Figure 3 、 Figure 4 The left and right directions in the figure are examples of the first direction of the present invention and are referred to as "first direction x". Figure 3 、 Figure 4 The up and down direction in the figure is an example of the second direction of the present invention and is referred to as the "second direction y". Figure 3 、 Figure 4 In the figure, the right side is an example of the "one side of the first direction" of the present invention, called the "x1 side of the first direction x", and the left side is an example of the "other side of the first direction" of the present invention, called the "x2 side of the first direction x". Figure 3 、 Figure 4 In the figure, the upper side is an example of "one side of the second direction" of the present invention, called "y1 side of the second direction y", and the lower side is an example of "the other side of the second direction" of the present invention, called "y2 side of the second direction y". Figures 8 to 11 In the figure, the upper side is an example of the "one side in the thickness direction" of the present invention, called the "z1 side in the thickness direction z", and the lower side is an example of the "other side in the thickness direction" of the present invention, called the "z2 side in the thickness direction z".

[0042] Semiconductor element 1 is the element that performs the electrical functions of semiconductor device A1. In this embodiment, semiconductor element 1 is a three-terminal element with three electrodes, such as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Alternatively, semiconductor element 1 may be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. In the description of semiconductor device A1, semiconductor element 1 is an n-channel MOSFET with a vertical structure. When viewed in the thickness direction z, semiconductor element 1 has a rectangular shape.

[0043] like Figure 2 、 Figure 4 and Figures 8 to 10As shown, the semiconductor element 1 includes a first surface 101, a second surface 102, a first electrode 11, a second electrode 12, and a third electrode 13. The first surface 101 and the second surface 102 are spaced apart in the thickness direction z, with the first surface 101 facing opposite sides facing the z1 side of the thickness direction z. The second surface 102 faces the z2 side of the thickness direction z.

[0044] The first electrode 11 is disposed on the element first surface 101. A current corresponding to the electric power (electric power) converted by the semiconductor element 1 flows through the first electrode 11. That is, the first electrode 11 corresponds to the source electrode of the semiconductor element 1.

[0045] The second electrode 12 is disposed on the device second surface 102. A current corresponding to the power before conversion by the semiconductor device 1 flows through the second electrode 12. That is, the second electrode 12 corresponds to the drain electrode of the semiconductor device 1.

[0046] The third electrode 13 is disposed on the first surface 101 of the device. A gate voltage for driving the semiconductor device 1 can be applied to the third electrode 13. In other words, the third electrode 13 serves as the gate electrode of the semiconductor device 1. When viewed in the thickness direction z, the area of ​​the third electrode 13 is smaller than that of the first electrode 11.

[0047] The first conductive member 2 is arranged on the z2 side in the thickness direction z relative to the semiconductor element 1. The first conductive member 2 is made of a conductive material such as metal, for example, copper (Cu).

[0048] like Figures 1 to 10 As shown, the first conductive component 2 has a first main surface 201 and a second main surface 202. The first main surface 201 is a surface facing the z1 side in the thickness direction z. The second main surface 202 is a surface facing the z2 side in the thickness direction z. The semiconductor element 1 is mounted on the first main surface 201. Figure 5 and Figure 6 As shown, the second main surface 202 is exposed from the sealing resin 9 .

[0049] like Figures 1 to 10 As shown, the first conductive component 2 includes an island portion 21 , a first terminal portion 22 , and a through hole 23 .

[0050] The island portion 21 is a portion on which the semiconductor element 1 is mounted in whole or in part. The island portion 21 includes a portion of the first main surface 201 and a portion of the second main surface 202. The shape and size of the island portion 21 are not limited in any way; in the illustrated example, the island portion 21 has a substantially rectangular shape when viewed in the thickness direction z.

[0051] like Figure 2 、 Figure 4 、 Figure 6 、 Figures 8 to 11As shown, the island portion 21 has a first edge portion 211, a second edge portion 212, a third edge portion 213 and a groove 214. The first edge portion 211 is located on the x1 side of the first direction x and extends in the second direction y. The second edge portion 212 is located on the x2 side of the first direction x and extends in the second direction y. The third edge portion 213 is located on the y2 side of the second direction y and extends in the first direction x. The groove 214 is recessed from the first main surface 201 to the z2 side of the thickness direction z, and has a roughly V-shaped cross-section. The groove 214 surrounds the semiconductor element 1 when viewed in the thickness direction z. The first edge portion 211, the second edge portion 212, the third edge portion 213 and the groove 214 are each covered by the sealing resin 5. In addition, a structure in which the island portion 21 does not have the groove 214, which is different from the example shown in the figure, can also be adopted.

[0052] like Figure 4 、 Figure 6 As shown, the first edge 211 has a first step 211a. The first step 211a is formed on the y1 side of the semiconductor element 1 in the second direction y. The first step 211a is formed so that the y1 side of the second direction y is recessed toward the x2 side of the first direction x relative to the y2 side of the second direction y. In this embodiment, the first step 211a is inclined relative to the first direction x and the second direction y such that it is positioned more toward the x2 side of the first direction x as it moves toward the y1 side of the second direction y in the second direction y.

[0053] The second edge 212 includes a second step 212a. The second step 212a is formed on the y1 side of the second direction y relative to the semiconductor element 1 in the second direction y. The second step 212a is formed so that the y1 side of the second direction y is recessed toward the x1 side of the first direction x relative to the y2 side of the second direction y. In this embodiment, the second step 212a is inclined relative to the first direction x and the second direction y such that it becomes more positioned toward the x1 side of the first direction x as it moves toward the y1 side of the second direction y in the second direction y.

[0054] In this embodiment, if Figure 4 、 Figure 6 、 Figure 10 、 Figure 11 As shown, the island portion 21 includes a main portion 21A, a first thin portion 21B, and a second thin portion 21C. The main portion 21A includes a portion of the first main surface 201 and a portion of the second main surface 202 .

[0055] The first thin-walled portion 21B is a portion connected to the main body 21A on the x1 side in the first direction x relative to the main body 21A. The first thin-walled portion 21B includes a portion of the first main surface 201 and a first intermediate surface 203. The first thin-walled portion 21B is a portion that does not have the second main surface 202. The first intermediate surface 203 faces the z2 side in the thickness direction z. The first intermediate surface 203 is located between the first main surface 201 and the second main surface 202 in the thickness direction z. Thus, the first thin-walled portion 21B is a portion on the z2 side in the thickness direction z that is recessed relative to the main body 21A. In the example shown in the figure, the first thin-walled portion 21B includes the entire first edge portion 211. The first step portion 211a is formed in the first thin-walled portion 21B.

[0056] The second thin-walled portion 21C is a portion connected to the main body 21A on the x2 side in the first direction x relative to the main body 21A. The second thin-walled portion 21C includes a portion of the first main surface 201 and a second intermediate surface 204. The second thin-walled portion 21C is a portion that does not have the second main surface 202. The second intermediate surface 204 faces the z2 side in the thickness direction z. The second intermediate surface 204 is located between the first main surface 201 and the second main surface 202 in the thickness direction z. As a result, the second thin-walled portion 21C has a shape that is recessed relative to the main body 21A on the z2 side in the thickness direction z. In the example shown in the figure, the second thin-walled portion 21C includes the entire second edge portion 212. The second step portion 212a is formed in the first thin-walled portion 21B.

[0057] like Figure 4 、 Figure 10 As shown in FIG, the semiconductor element 1 overlaps the main body portion 21A and the first thin-walled portion 21B when viewed in the thickness direction z. Also, the semiconductor element 1 overlaps the main body portion 21A and the second thin-walled portion 21C when viewed in the thickness direction z.

[0058] like Figures 8 to 10 As shown, a semiconductor element 1 is bonded to the first main surface 201 of the island portion 21 via (through) a conductive bonding material 19. The second surface 102 of the semiconductor element 1 is opposite to the first main surface 201. The second electrode 12 on the second surface 102 of the element is conductively bonded to the first main surface 201 via the conductive bonding material 19. The specific structure of the conductive bonding material 19 is not particularly limited, and it may be, for example, solder (a metal containing tin and silver). In addition, the conductive bonding material 19 may also be composed of a metal paste containing a metal such as silver (Ag). In addition, a plating layer composed of, for example, silver (Ag) may also be formed in the area of ​​the first main surface 201 of the island portion 21 where the semiconductor element 1 is bonded.

[0059] The first terminal portion 22 is connected to the island portion 21 on the y1 side in the second direction y relative to the island portion 21. The first terminal portion 22 includes a portion of the first main surface 201 and a portion of the second main surface 202. The first terminal portion 22 can also be used as a terminal when mounting the semiconductor device A1.

[0060] The through-hole 23 penetrates the first conductive component 2 in the thickness direction z. In this embodiment, the through-hole 23 is partially filled with the sealing resin 5. Furthermore, the cross-section of the through-hole 23 perpendicular to the thickness direction z is larger on the z2 side of the thickness direction z than on the z1 side of the thickness direction z. This structure, for example, prevents the first conductive component 2 from falling out of the sealing resin 5.

[0061] A plating layer made of an alloy containing tin (Sn) as a main component may be formed on a portion of the first conductive member 2 exposed from the sealing resin 5 .

[0062] The second conductive member 3 includes a portion disposed on the z1 side of the semiconductor element 1 in the thickness direction z. The second conductive member 3 is made of a conductive material such as metal, for example, Cu (copper). Figures 1 to 6 、 Figures 8 to 10 As shown, the second conductive component 3 has a pad portion 31 and a plurality of second terminal portions 32 .

[0063] The pad portion 31 is a portion that is electrically connected to the first electrode 11 of the semiconductor element 1. The shape and size of the pad portion 31 are not limited in any way. In the example shown in the figure, the pad portion 31 has a shape that overlaps most of the first electrode 11 when viewed in the thickness direction z and exposes the third electrode 13.

[0064] like Figures 8 to 10 As shown, the pad portion 31 is bonded to the first electrode 11 of the semiconductor element 1 via a conductive bonding material 39. The pad portion 31 and the first electrode 11 are conductively bonded via the conductive bonding material 39. The specific structure of the conductive bonding material 39 is not particularly limited, and it can be, for example, solder (a metal containing tin and silver). In addition, the conductive bonding material 39 can also be composed of a metal paste containing a metal such as silver (Ag). In addition, a plating layer composed of, for example, silver (Ag) can also be formed in the area of ​​the pad portion 31 that is bonded to the semiconductor element 1 (first electrode 11).

[0065] The plurality of second terminal portions 32 are connected to the solder pad portion 31 on the y2 side of the second direction y relative to the solder pad portion 31. Each of the second terminal portions 32 extends in the second direction y when viewed in the thickness direction z, and is arranged at intervals in the first direction x. There is no limitation on the number of the plurality of second terminal portions 32, and it can be 3 as shown in the example shown in the figure, or it can be 2, or it can be 4 or more. In addition, it can also be a structure including only one second terminal portion 32. Figure 1 、 Figure 2 and Figure 8 As shown, the second terminal portion 32 includes a portion connected to the pad portion 31 and covered by the sealing resin 5, a portion protruding from the sealing resin 5 toward the y2 side in the second direction y, a portion folded back toward the z2 side in the thickness direction z, and a portion located toward the z2 side in the thickness direction z. The plurality of second terminal portions 32 are used as terminals when mounting the semiconductor device A1.

[0066] A plating layer made of, for example, an alloy containing tin (Sn) as a main component may be formed on the portion of the second conductive member 3 (the plurality of second terminal portions 32 ) exposed from the sealing resin 5 .

[0067] The third conductive member 4 includes a portion disposed on the z1 side of the semiconductor element 1 in the thickness direction z. The third conductive member 4 is made of a conductive material such as metal, for example, Cu (copper). Figures 1 to 7 、 Figure 9 、 Figure 10 As shown, the second conductive component 3 has a pad portion 41 and a third terminal portion 42 .

[0068] The pad portion 41 is a portion that is electrically connected to the third electrode 13 of the semiconductor element 1. The shape and size of the pad portion 41 are not limited in any way. In the example shown in the figure, the pad portion 41 has a shape that overlaps with a portion of the third electrode 13 when viewed in the thickness direction z and exposes the third electrode 13.

[0069] like Figure 9 As shown, the pad portion 41 is bonded to the third electrode 13 of the semiconductor element 1 via a conductive bonding material 49. The pad portion 41 and the third electrode 13 are conductively bonded via the conductive bonding material 49. The specific structure of the conductive bonding material 49 is not particularly limited, and it can be, for example, solder (a metal containing tin and silver). In addition, the conductive bonding material 49 can also be composed of a metal paste containing a metal such as silver (Ag). In addition, a plating layer composed of, for example, silver (Ag) can also be formed in the area of ​​the pad portion 41 that is bonded to the semiconductor element 1 (third electrode 13).

[0070] The third terminal portion 42 is connected to the pad portion 41 on the y2 side of the second direction y relative to the pad portion 41. The third terminal portion 42 extends in the second direction y when viewed from the thickness direction z. Figure 1 、 Figure 2 、 Figure 7 and Figure 9As shown, the third terminal portion 42 includes a portion connected to the pad portion 41 and covered by the sealing resin 5, a portion protruding from the sealing resin 5 toward the y2 side in the second direction y, a portion folded back toward the z2 side in the thickness direction z, and a portion located toward the z2 side in the thickness direction z. When viewed in the first direction x, the third terminal portion 42 has a shape and size that substantially overlaps with the second terminal portion 32. The third terminal portion 42 serves as a terminal when mounting the semiconductor device A1.

[0071] A plating layer made of an alloy containing tin (Sn) as a main component may be formed on a portion of the third conductive member 4 (third terminal portion 42 ) exposed from the sealing resin 5 .

[0072] The sealing resin 5 covers the semiconductor element 1 and covers a portion of each of the first conductive part 2, the second conductive part 3, and the third conductive part 4. The sealing resin 5 has electrical insulation properties. The sealing resin 5 includes, for example, a black epoxy resin containing a filler. The shape of the sealing resin 5 is not limited. Figure 1 、 Figures 3 to 11 As shown, the sealing resin 5 of this embodiment has a first resin surface 51 , a second resin surface 52 , a third resin surface 53 , a fourth resin surface 54 , a fifth resin surface 55 , and a sixth resin surface 56 .

[0073] The first resin surface 51 is the surface facing the z1 side of the thickness direction z. The second resin surface 52 is the surface facing the z2 side of the thickness direction z. The second main surface 202 of the first conductive component 2 is exposed from the second resin surface 52. In the illustrated example, the first and second resin surfaces 51 and 52 are flat surfaces, but are not limited to this. For example, they may be curved or bent surfaces. In the illustrated example, the second resin surface 52 and the second main surface 202 are coplanar (coplanar).

[0074] The third resin surface 53 is a surface facing the x1 side of the first direction x. The fourth resin surface 54 is a surface facing the x2 side of the first direction x. In the illustrated example, the third resin surface 53 and the fourth resin surface 54 are slightly curved surfaces, but this is not limiting and may be, for example, curved surfaces or flat surfaces.

[0075] The fifth resin surface 55 is a surface facing the y1 side of the second direction y. The sixth resin surface 56 is a surface facing the y2 side of the second direction y. In the illustrated example, the fifth and sixth resin surfaces 55 and 56 are slightly curved surfaces, but are not limited to this. For example, curved surfaces or flat surfaces may also be used. In this embodiment, the first terminal portion 22 protrudes from the fifth resin surface 55, and the plurality of second terminal portions 32 and third terminal portions 42 protrude from the sixth resin surface 56.

[0076] Next, the operation of the semiconductor device A1 will be described.

[0077] In the semiconductor device A1, the first edge 211 of the island 21 has a first step portion 211a. The first edge 211 is located on the x1 side of the first direction x of the island 21 and extends in the second direction y. The first step portion 211a is formed on the y1 side of the second direction y relative to the semiconductor element 1 in the second direction y and is covered by the sealing resin 5. The portion of the first step portion 211a on the y1 side of the second direction y is recessed toward the x2 side of the first direction x compared to the portion on the y2 side of the second direction y. According to such a structure, when each part is thermally expanded or contracted due to the heat generated by the semiconductor element 1, the first step portion 211a can withstand the thermal contraction of the sealing resin 5 (in Figure 12 Therefore, stress acting near the periphery of the semiconductor element 1 (near the corners of the semiconductor element 1 on the x1 side in the first direction x and on the y1 side in the second direction y) can be reduced.

[0078] The second edge 212 of the island 21 has a second step portion 212a. The second step portion 212a is located on the x2 side of the first direction x of the island 21 and extends in the second direction y. The second step portion 212a is formed on the y1 side of the second direction y relative to the semiconductor element 1 in the second direction y and is covered by the sealing resin 5. The portion of the second step portion 212a on the y1 side of the second direction y is recessed toward the x1 side of the first direction x relative to the portion on the y2 side of the second direction y. According to such a structure, the second step portion 212a can withstand the thermal contraction of the sealing resin 5 (at Figure 12 Therefore, stress acting near the periphery of the semiconductor element 1 (near the corners of the semiconductor element 1 on the x2 side in the first direction x and on the y1 side in the second direction y) can be reduced.

[0079] The island portion 21 includes a main portion 21A, a first thin-walled portion 21B, and a second thin-walled portion 21C. The main portion 21A includes a portion of the first principal surface 201 and a portion of the second principal surface 202. The first thin-walled portion 21B is connected to the main portion 21A on the x1 side in the first direction x relative to the main portion 21A and includes a portion of the first principal surface 201 and a first intermediate surface 203. The first intermediate surface 203 faces the z2 side in the thickness direction z and is located between the first principal surface 201 and the second principal surface 202 in the thickness direction z. The second thin-walled portion 21C is connected to the main portion 21A on the x2 side in the first direction x relative to the main portion 21A and includes a portion of the first principal surface 201 and a second intermediate surface 204. The second intermediate surface 204 faces the z2 side in the thickness direction z and is located between the first principal surface 201 and the second principal surface 202 in the thickness direction z. Semiconductor element 1 overlaps body portion 21A, first thin portion 21B, and second thin portion 21C when viewed in thickness direction z. This structure reduces stress acting near the periphery of semiconductor element 1 as described above, while increasing the size of semiconductor element 1 mounted on island 21.

[0080] Figures 13 to 21 1 and 2 represent other embodiments of the present invention. In addition, in these figures, the same or similar elements as those in the above-mentioned embodiments are marked with the same reference numerals as those in the above-mentioned embodiments, and repeated descriptions are omitted. In addition, the structures of the various parts in each embodiment can be appropriately combined with each other within the range that does not produce technical contradictions.

[0081] Second embodiment:

[0082] Figures 13 to 15 A semiconductor device according to a second embodiment of the present invention is shown. Figure 13 It is a plan view showing an important part of the semiconductor device A2 according to the present embodiment, with the sealing resin 5 being seen through. Figure 14 This is a bottom view of the main part of the semiconductor device A2, with the sealing resin 5 shown through. Figure 15 It is along Figure 13 The cross-sectional view of the XV-XV line. Figure 13 and Figure 14 In FIG. 1 , the sealing resin 5 that is seen through is indicated by an imaginary line (two-dot chain line).

[0083] In the semiconductor device A2, the formation regions of the main body portion 21A, the first thin-walled portion 21B, and the second thin-walled portion 21C of the island portion 21 are different from those in the above-described embodiment. Figure 14 As shown, in the semiconductor device A2, the formation region of the main body portion 21A is larger than that of the semiconductor device A1 of the above-described embodiment.

[0084] like Figure 14 As shown, in the semiconductor device A2, a first step portion 211a and a second step portion 212a are formed in the main body portion 21A.

[0085] In semiconductor device A2, the first step portion 211a of the island 21 is formed on the y1 side of the semiconductor element 1 in the second direction y and is covered by the sealing resin 5. The portion of the first step portion 211a on the y1 side of the second direction y is recessed toward the x2 side of the first direction x relative to the portion on the y2 side of the second direction y. This structure allows the first step portion 211a to withstand thermal contraction of the sealing resin 5. Consequently, stress acting near the periphery of the semiconductor element 1 (near the corners of the semiconductor element 1 on the x1 side of the first direction x and the y1 side of the second direction y) can be reduced.

[0086] The second step portion 212a of the island portion 21 is formed on the y1 side of the semiconductor element 1 in the second direction y and is covered by the sealing resin 5. The portion of the second step portion 212a on the y1 side of the second direction y is recessed toward the x1 side of the first direction x relative to the portion on the y2 side of the second direction y. With this structure, the second step portion 212a can withstand thermal contraction of the sealing resin 5. Consequently, stress acting near the periphery of the semiconductor element 1 (near the corners of the semiconductor element 1 on the x2 side of the first direction x and the y1 side of the second direction y) can be reduced.

[0087] In semiconductor device A2, first step 211a and second step 212a are formed in body 21A. This structure allows a larger area to withstand thermal contraction of sealing resin 5. This structure is more preferable in terms of reducing stress acting near the periphery of semiconductor element 1.

[0088] Semiconductor element 1 overlaps body portion 21A, first thin portion 21B, and second thin portion 21C when viewed in thickness direction z. This structure reduces stress acting on the periphery of semiconductor element 1 and increases the size of semiconductor element 1 mounted on island 21.

[0089] Third embodiment:

[0090] Figure 16 and Figure 17 A semiconductor device according to a third embodiment of the present invention is shown. Figure 16 It is a plan view showing an important part of the semiconductor device A3 according to the present embodiment, with the sealing resin 5 being seen through. Figure 17 FIG3 is a bottom view of an important part of the semiconductor device A3, showing the sealing resin 5. Figure 16 and Figure 17 In FIG. 1 , the sealing resin 5 that is seen through is indicated by an imaginary line (two-dot chain line).

[0091] The structures of the first edge portion 211 and the second edge portion 212 of the semiconductor device A3 are different from those in the above embodiment.

[0092] like Figure 16 、 Figure 17 As shown, the first edge 211 has a first recess 211b formed on the y1 side of the semiconductor element 1 in the second direction y. The first recess 211b is recessed toward the x2 side of the first direction x and includes a first step 211a.

[0093] The second edge 212 has a second recess 212b formed on the y1 side of the second direction y of the semiconductor element 1. The second recess 212b is recessed toward the x1 side of the first direction x and includes a second step 212a.

[0094] In semiconductor device A3, the first step portion 211a of the island 21 is formed on the y1 side of the semiconductor element 1 in the second direction y and is covered by the sealing resin 5. The portion of the first step portion 211a on the y1 side of the second direction y is recessed toward the x2 side of the first direction x relative to the portion on the y2 side of the second direction y. This structure allows the first step portion 211a to withstand thermal contraction of the sealing resin 5. Consequently, stress acting near the periphery of the semiconductor element 1 (near the corners of the semiconductor element 1 on the x1 side of the first direction x and the y1 side of the second direction y) can be reduced.

[0095] The second step portion 212a of the island portion 21 is formed on the y1 side of the semiconductor element 1 in the second direction y and is covered with the sealing resin 5. The portion of the second step portion 212a on the y1 side of the second direction y is recessed toward the x1 side of the first direction x relative to the portion on the y2 side of the second direction y. With this structure, the second step portion 212a can withstand thermal contraction of the sealing resin 5. Consequently, stress acting near the periphery of the semiconductor element 1 (near the corners of the semiconductor element 1 on the x2 side of the first direction x and the y1 side of the second direction y) can be reduced.

[0096] Semiconductor element 1 overlaps body portion 21A, first thin portion 21B, and second thin portion 21C when viewed in thickness direction z. This structure reduces stress acting on the periphery of semiconductor element 1 and increases the size of semiconductor element 1 mounted on island 21.

[0097] Fourth embodiment:

[0098] Figure 18 and Figure 19 A semiconductor device according to a fourth embodiment of the present invention is shown. Figure 18 It is a plan view showing an important part of the semiconductor device A4 according to the present embodiment, with the sealing resin 5 being seen through. Figure 19 FIG1 is a bottom view of an important part of the semiconductor device A4, showing the sealing resin 5. Figure 18 and Figure 19 In FIG. 1 , the sealing resin 5 that is seen through is indicated by an imaginary line (two-dot chain line).

[0099] The structures of the first step portion 211 a and the second step portion 212 a of the semiconductor device A4 are different from those in the above embodiment.

[0100] like Figure 18 、 Figure 19As shown, in the semiconductor device A4, the first step portion 211a is perpendicular or substantially perpendicular to the second direction y when viewed in the thickness direction z, and the first recess 211b is perpendicular or substantially perpendicular to the second direction y when viewed in the thickness direction z.

[0101] In semiconductor device A4, the first step portion 211a of the island 21 is formed in the second direction y, closer to the y1 side of the second direction y than the semiconductor element 1, and is covered by the sealing resin 5. The portion of the first step portion 211a on the y1 side of the second direction y is recessed toward the x2 side of the first direction x relative to the portion on the y2 side of the second direction y. With this structure, the first step portion 211a can withstand the thermal contraction of the sealing resin 5. Consequently, stress acting near the periphery of the semiconductor element 1 (near the corners of the semiconductor element 1 on the x1 side of the first direction x and the y1 side of the second direction y) can be reduced.

[0102] The second step portion 212a of the island portion 21 is formed on the y1 side of the semiconductor element 1 in the second direction y and is covered with the sealing resin 5. The portion of the second step portion 212a on the y1 side of the second direction y is recessed toward the x1 side of the first direction x relative to the portion on the y2 side of the second direction y. With this structure, the second step portion 212a can withstand thermal contraction of the sealing resin 5. Consequently, stress acting near the periphery of the semiconductor element 1 (near the corners of the semiconductor element 1 on the x2 side of the first direction x and the y1 side of the second direction y) can be reduced.

[0103] Semiconductor element 1 overlaps body portion 21A, first thin portion 21B, and second thin portion 21C when viewed in thickness direction z. This structure reduces stress acting on the periphery of semiconductor element 1 and increases the size of semiconductor element 1 mounted on island 21.

[0104] Fifth embodiment:

[0105] Figure 20 and Figure 21 A semiconductor device according to a fifth embodiment of the present invention is shown. Figure 20 It is a plan view showing an important part of the semiconductor device A5 according to the present embodiment, with the sealing resin 5 being seen through. Figure 21 FIG1 is a bottom view of an important part of the semiconductor device A5, showing the sealing resin 5. Figure 20 and Figure 21 In FIG. 1 , the sealing resin 5 that is seen through is indicated by an imaginary line (two-dot chain line).

[0106] The structures of the first edge 211 and the second edge 212 of the semiconductor device A5 are different from those of the above embodiment. In the semiconductor device A5, the first edge 211 further includes a first step 211c, and the second edge 212 further includes a second step 212c.

[0107] In semiconductor device A5, first edge 211 has two first steps 211a and 211c. First step 211c is adjacent to first step 211a in the second direction y, closer to the y1 side of the second direction y. First step 211c is formed so that its portion on the y1 side of the second direction y is recessed toward the x2 side of the first direction x, relative to the y2 side of the second direction y. Thus, in semiconductor device A5, first edge 211 has first steps 211a and 211c that are recessed in two stages.

[0108] The second edge 212 has two second steps 212a and 212c. The second step 212c is adjacent to the second step 212a in the second direction y, closer to the y1 side of the second direction y. The second step 212c is formed so that the portion on the y1 side of the second direction y is recessed toward the x2 side of the first direction x relative to the portion on the y2 side of the second direction y. Thus, the second edge 212 has the second steps 212a and 212c recessed in two stages.

[0109] In the semiconductor device A5 , the groove 214 is not formed near the first step portions 211 a , 211 c and near the second step portions 212 a , 212 c .

[0110] In semiconductor device A5, the first steps 211a and 211c of the island 21 are formed on the y1 side of the semiconductor element 1 in the second direction y and are covered by the sealing resin 5. The portion of each first step 211a and 211c on the y1 side of the second direction y is recessed toward the x2 side of the first direction x relative to the portion on the y2 side of the second direction y. With this structure, the two first steps 211a and 211c can withstand the thermal contraction of the sealing resin 5. Consequently, stress acting near the periphery of the semiconductor element 1 (near the corners of the semiconductor element 1 on the x1 side of the first direction x and on the y1 side of the second direction y) can be reduced.

[0111] The second step portions 212a and 212c of the island portion 21 are formed on the y1 side of the semiconductor element 1 in the second direction y and are covered with the sealing resin 5. The portion on the y1 side of each second step portion 212a and 212c in the second direction y is recessed toward the x1 side in the first direction x relative to the portion on the y2 side in the second direction y. This structure allows the two second step portions 212a and 212c to withstand thermal contraction of the sealing resin 5. Consequently, stress acting near the periphery of the semiconductor element 1 (near the corners of the semiconductor element 1 on the x2 side in the first direction x and the y1 side in the second direction y) can be reduced.

[0112] Semiconductor element 1 overlaps body portion 21A, first thin portion 21B, and second thin portion 21C when viewed in thickness direction z. This structure reduces stress acting on the periphery of semiconductor element 1 and increases the size of semiconductor element 1 mounted on island 21.

[0113] The semiconductor device of the present invention is not limited to the above-described embodiment, and the specific structure of each part of the semiconductor device of the present invention can be freely modified in various designs.

[0114] The present invention includes the embodiments described in the following supplementary notes.

[0115] Note 1.

[0116] A semiconductor device comprising:

[0117] a first conductive component having an island portion;

[0118] a semiconductor element disposed on one side in the thickness direction of the island portion; and

[0119] a sealing resin covering the semiconductor element and at least a portion of the first conductive member,

[0120] The island portion includes a first edge portion located on one side of a first direction perpendicular to the thickness direction and extending in a second direction perpendicular to the thickness direction and the first direction.

[0121] The first edge portion has a first step portion that is covered with the sealing resin and is formed on one side of the semiconductor element in the second direction.

[0122] A portion of the first step portion on one side in the second direction is recessed toward the other side in the first direction relative to a portion on the other side in the second direction.

[0123] Note 2.

[0124] The semiconductor device according to Supplementary Note 1, wherein:

[0125] The island portion has: a first main surface facing one side in the thickness direction; and a second main surface facing the other side in the thickness direction.

[0126] The semiconductor element includes a first element surface facing one side in the thickness direction and a second element surface facing the other side in the thickness direction and opposite to the first main surface.

[0127] Note 3.

[0128] The semiconductor device according to Supplementary Note 2, wherein:

[0129] The island portion includes a main body portion,

[0130] The main body has at least a portion of the first main surface and the second main surface.

[0131] Note 4.

[0132] The semiconductor device according to Supplementary Note 3, wherein:

[0133] The island portion includes a first thin-walled portion connected to a portion of the main body portion on one side of the first direction.

[0134] The first thin-walled portion includes: a portion of the first main surface; and a first intermediate surface facing the other side in the thickness direction and located between the first main surface and the second main surface in the thickness direction.

[0135] The first thin-walled portion includes at least a portion of the first edge portion.

[0136] Note 5.

[0137] The semiconductor device according to Supplementary Note 4, wherein:

[0138] The first step portion is formed in the first thin-walled portion.

[0139] Note 6.

[0140] The semiconductor device according to Supplementary Note 3 or 4, wherein:

[0141] The first step portion is formed on the main body portion.

[0142] Note 7.

[0143] The semiconductor device according to any one of Supplementary Notes 4 to 6, wherein

[0144] When viewed in the thickness direction, the semiconductor element overlaps with the main body portion and the first thin-walled portion.

[0145] Note 8.

[0146] The semiconductor device according to any one of Supplementary Notes 1 to 7, wherein

[0147] The first edge portion includes the first step portion and has a first recessed portion recessed toward the other side in the first direction.

[0148] Note 9.

[0149] The semiconductor device according to any one of Supplementary Notes 1 to 8, wherein

[0150] The island portion includes a second edge portion located on the other side of the first direction and extending in the second direction,

[0151] The second edge portion has a second step portion that is covered with the sealing resin and formed on one side of the semiconductor element in the second direction.

[0152] A portion of the second step portion on one side in the second direction is recessed toward one side in the first direction relative to a portion on the other side in the second direction.

[0153] Note 10.

[0154] The semiconductor device according to any one of Supplementary Notes 4 to 7, wherein

[0155] The island portion includes a second edge portion located on the other side of the first direction and extending in the second direction,

[0156] The second edge portion has a second step portion that is covered with the sealing resin and formed on one side of the semiconductor element in the second direction.

[0157] The portion of the second step portion on one side in the second direction is recessed toward the first direction relative to the portion on the other side in the second direction.

[0158] The island portion includes a second thin-walled portion connected to a portion of the main body portion on the other side of the first direction.

[0159] The second thin-walled portion has: a portion of the first main surface; and a second intermediate surface facing the other side in the thickness direction, the second intermediate surface being located between the first main surface and the second main surface in the thickness direction,

[0160] The second thin-walled portion includes at least a portion of the second edge portion.

[0161] Note 11.

[0162] The semiconductor device according to Supplementary Note 10, wherein

[0163] The second step portion is formed in the second thin-walled portion.

[0164] Note 12.

[0165] The semiconductor device according to Supplementary Note 10, wherein

[0166] The second step portion is formed on the main body portion.

[0167] Note 13.

[0168] The semiconductor device according to any one of Supplementary Notes 10 to 12, wherein:

[0169] When viewed in the thickness direction, the semiconductor element overlaps with the main body portion and the second thin-walled portion.

[0170] Note 14.

[0171] The semiconductor device according to any one of Supplementary Notes 9 to 13, wherein:

[0172] The second edge portion includes the second step portion and has a second recessed portion recessed toward one side in the first direction.

[0173] Note 15.

[0174] The semiconductor device according to any one of Supplementary Notes 1 to 14, wherein

[0175] The semiconductor element includes: a first electrode arranged on one side in the thickness direction; and a second electrode arranged on the other side in the thickness direction.

[0176] The second electrode is conductively bonded to a portion of the island portion on one side in the thickness direction.

[0177] Note 16.

[0178] The semiconductor device according to Supplementary Note 15 further includes: a second conductive member conductively connected to the first electrode, and a third conductive member conductively connected to the third electrode.

[0179] The semiconductor element includes a third electrode disposed on one side in the thickness direction.

[0180] Description of Reference Signs

[0181] A1, A2, A3, A4, A5: Semiconductor devices 1: Semiconductor components

[0182] 101: Component first side 102: Component second side

[0183] 11: First electrode 12: Second electrode

[0184] 13: Third electrode 19: Conductive bonding material

[0185] 2: First conductive component 201: First main surface

[0186] 202: Second main surface 203: First intermediate surface

[0187] 204: Second intermediate surface 21: Island

[0188] 21A: Main body 21B: First thin-walled portion

[0189] 21C: Second thin-walled portion 211: First edge portion

[0190] 211a, 211c: first step portion 211b: first recess

[0191] 212: Second edge 212a, 212c: Second step

[0192] 212b: Second concave portion 213: Third edge portion

[0193] 214: groove 22: first terminal portion

[0194] 23: Through hole 3: Second conductive component

[0195] 31: pad portion 32: second terminal portion

[0196] 39: Conductive bonding material 4: Third conductive component

[0197] 41: pad portion 42: third terminal portion

[0198] 49: Conductive bonding material 5: Sealing resin

[0199] 51: First resin surface 52: Second resin surface

[0200] 53: Third resin surface 54: Fourth resin surface

[0201] 55: fifth resin surface 56: sixth resin surface

Claims

1. A semiconductor device, characterized in that: include: a first conductive component having an island portion; a semiconductor element disposed on one side of the island portion in a thickness direction; and a sealing resin covering the semiconductor element and at least a portion of the first conductive member, The island portion includes a first edge portion located on one side of a first direction perpendicular to the thickness direction and extending in a second direction perpendicular to the thickness direction and the first direction. The first edge portion has a first step portion that is covered with the sealing resin and is formed on one side of the semiconductor element in the second direction. A portion of the first step portion on one side in the second direction is recessed toward the other side in the first direction relative to a portion on the other side in the second direction.

2. The semiconductor device according to claim 1, wherein: The island portion has: a first main surface facing one side in the thickness direction; and a second main surface facing the other side in the thickness direction. The semiconductor element has: an element first surface facing one side in the thickness direction; and a second surface of the element facing the other side in the thickness direction and opposite to the first main surface.

3. The semiconductor device according to claim 2, wherein: The island portion includes a main body portion, The main body has at least a portion of the first main surface and the second main surface.

4. The semiconductor device according to claim 3, wherein: The island portion includes a first thin-walled portion connected to a portion of the main body portion on one side of the first direction. The first thin-walled portion includes: a portion of the first main surface; and a first intermediate surface facing the other side in the thickness direction, the first intermediate surface being located between the first main surface and the second main surface in the thickness direction. The first thin-walled portion includes at least a portion of the first edge portion.

5. The semiconductor device according to claim 4, wherein: The first step portion is formed in the first thin-walled portion.

6. The semiconductor device according to claim 3 or 4, wherein: The first step portion is formed on the main body portion.

7. The semiconductor device according to any one of claims 4 to 6, wherein: The semiconductor element overlaps the main body portion and the first thin-walled portion when viewed in the thickness direction.

8. The semiconductor device according to any one of claims 1 to 7, wherein: The first edge portion includes the first step portion and has a first recessed portion recessed toward the other side in the first direction.

9. The semiconductor device according to any one of claims 1 to 8, wherein: The island portion includes a second edge portion, the second edge portion is located on the other side of the first direction and extends in the second direction, The second edge portion has a second step portion that is covered with the sealing resin and formed on one side of the semiconductor element in the second direction. A portion of the second step portion on one side in the second direction is recessed toward one side in the first direction relative to a portion on the other side in the second direction.

10. The semiconductor device according to any one of claims 4 to 7, wherein: The island portion includes a second edge portion, the second edge portion is located on the other side of the first direction and extends in the second direction, The second edge portion has a second step portion that is covered with the sealing resin and formed on one side of the semiconductor element in the second direction. The portion of the second step portion on one side in the second direction is recessed toward the first direction relative to the portion on the other side in the second direction. The island portion includes a second thin-walled portion connected to a portion of the main body portion on the other side of the first direction. The second thin-walled portion has: a portion of the first main surface; and a second intermediate surface facing the other side in the thickness direction, the second intermediate surface being located between the first main surface and the second main surface in the thickness direction, The second thin-walled portion includes at least a portion of the second edge portion.

11. The semiconductor device according to claim 10, wherein: The second step portion is formed in the second thin-walled portion.

12. The semiconductor device according to claim 10, wherein: The second step portion is formed on the main body portion.

13. The semiconductor device according to any one of claims 10 to 12, wherein: When viewed in the thickness direction, the semiconductor element overlaps with the main body portion and the second thin-walled portion.

14. The semiconductor device according to any one of claims 9 to 13, wherein: The second edge portion includes the second step portion and has a second recessed portion recessed toward one side in the first direction.

15. The semiconductor device according to any one of claims 1 to 14, wherein: The semiconductor element includes: a first electrode arranged on one side in the thickness direction; and a second electrode arranged on the other side in the thickness direction. The second electrode is conductively bonded to a portion of the island portion on one side in the thickness direction.

16. The semiconductor device according to claim 15, wherein: The semiconductor element has a third electrode arranged on one side in the thickness direction. The semiconductor device further includes: a second conductive feature conductively bonded to the first electrode; and a third conductive feature conductively bonded to the third electrode.

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