Semiconductor device

Abstract

Provided is a semiconductor device capable of improving characteristics. According to one embodiment, a semiconductor device includes first to third electrodes, first to fifth semiconductor components, and a first insulating member. The first semiconductor component is of a first conductivity type. The sixth partial region of the first semiconductor component is in Schottky contact with the second electrode. The second semiconductor component is of a second conductivity type. The third semiconductor component is of the first conductivity type. The fourth semiconductor component is of the second conductivity type. The fifth semiconductor component is of the second conductivity type. A fifth impurity concentration of the second conductivity type of the fifth semiconductor component is lower than a fourth impurity concentration of the second conductivity type of the fourth semiconductor component.

Description

Technical Field

[0001] Embodiments of the present invention relate to a semiconductor device. Background Art

[0002] For example, in semiconductor devices including Schottky barrier diodes and the like, improvement in characteristics is desired.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2023-45865 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] Embodiments provide a semiconductor device capable of improving characteristics.

[0008] Means for solving problems

[0009] According to an embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor component, a second semiconductor component, a third semiconductor component, a fourth semiconductor component, a fourth semiconductor component, a fifth semiconductor component, and a first insulating component. The first semiconductor region is provided between the first electrode and the second electrode and has a first conductivity type. The first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region. The third partial region is provided parallel to the second partial region in a second direction intersecting a first direction from the first electrode to the second electrode, and the first partial region is located between the third partial region and the second partial region in the second direction. The fourth partial region is parallel to the second partial region in a direction intersecting the first direction. The fifth partial region is parallel to the first partial region in the first direction. The sixth partial region is parallel to the fourth partial region in the first direction and forms a Schottky contact with the second electrode. The second semiconductor component has a second conductivity type. The second semiconductor component includes: a first semiconductor component of the first conductivity type, disposed between the first electrode and the second electrode; a first semiconductor region, aligned with the second partial region in the first direction; a second semiconductor region; a third semiconductor region, aligned with the third partial region in the first direction; and a fourth semiconductor region. The third semiconductor component is electrically connected to the second electrode and has the first conductivity type. The third semiconductor component includes: a first semiconductor portion, disposed so that the second semiconductor region is located between the first semiconductor portion and the fifth partial region in the second direction; and a second semiconductor portion, disposed so that the fourth semiconductor region is located between the second semiconductor portion and the fifth partial region in the second direction. The fourth semiconductor component is electrically connected to the second electrode and has the second conductivity type. The fourth semiconductor component is disposed so that the first semiconductor region is located between the fourth semiconductor component and the second partial region in the first direction. The fourth semiconductor component is disposed so that the first semiconductor portion is located between the fourth semiconductor component and the second semiconductor region in the second direction. The fifth semiconductor component is electrically connected to the second electrode and has the second conductivity type. The fifth semiconductor component is disposed so that the third semiconductor region is located between the fifth semiconductor component and the third partial region in the first direction. The fifth semiconductor component is provided so that the second semiconductor portion is located between the fifth semiconductor component and the fourth semiconductor region in the second direction. The fifth semiconductor component has a fifth impurity concentration of the second conductivity type lower than a fourth impurity concentration of the second conductivity type of the fourth semiconductor component.The third electrode is arranged so that the fifth partial region is located between the third electrode and the first partial region in the first direction. The first insulating component includes a first insulating region arranged between the fifth partial region and at least a portion of the first conductive portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. DETAILED DESCRIPTION

[0011] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0012] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as in reality. Even when showing the same part, the size and ratio may be different depending on the drawing.

[0013] In the present specification and the drawings, regarding the drawings that have already appeared, the same elements as those described above are denoted by the same reference numerals, and detailed descriptions thereof are appropriately omitted.

[0014] (First embodiment)

[0015] Figure 1 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0016] like Figure 1 As shown, the semiconductor device 110 of the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor component 11, a second semiconductor component 12, a third semiconductor component 13, a fourth semiconductor component 14, and a fifth semiconductor component 15. The first semiconductor component 11, the second semiconductor component 12, the third semiconductor component 13, the fourth semiconductor component 14, and the fifth semiconductor component 15 are included in, for example, a semiconductor layer 10S.

[0017] The first semiconductor component 11 is disposed between the first electrode 51 and the second electrode 52 and has a first conductivity type. The first semiconductor component 11 includes a first partial region 11a, a second partial region 11b, a third partial region 11c, a fourth partial region 11d, a fifth partial region 11e, and a sixth partial region 11f. A second direction D2 from the third partial region 11c toward the second partial region 11b intersects the first direction D1 from the first electrode 51 toward the second electrode 52.

[0018] The first direction D1 is set as the Z-axis direction. A direction perpendicular to the Z-axis direction is set as the X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is set as the Y-axis direction. In one example, the second direction D2 can be the X-axis direction.

[0019] The first partial region 11a is located between the third partial region 11c and the second partial region 11b in the second direction D2. The direction from the second partial region 11b to the fourth partial region 11d intersects the first direction D1. In this example, the direction from the second partial region 11b to the fourth partial region 11d is along the second direction D2. In embodiments, the direction from the second partial region 11b to the fourth partial region 11d may be any direction intersecting the first direction D1 (e.g., a direction having a component equal to the Y-axis direction).

[0020] The direction from the first partial region 11 a to the fifth partial region 11 e is along the first direction D1 . The direction from the fourth partial region 11 d to the sixth partial region 11 f is along the first direction D1 . The sixth partial region 11 f makes Schottky contact with the second electrode 52 .

[0021] The second semiconductor component 12 is of the second conductivity type. The first conductivity type is one of the n-type and the p-type. The second conductivity type is the other of the n-type and the p-type. Hereinafter, the first conductivity type is the n-type and the second conductivity type is the p-type.

[0022] The second semiconductor component 12 includes a first semiconductor region 12a, a second semiconductor region 12b, a third semiconductor region 12c, and a fourth semiconductor region 12d. The direction from the second subregion 11b to the first semiconductor region 12a is along the first direction D1. The direction from the third subregion 11c to the third semiconductor region 12c is along the first direction D1.

[0023] The third semiconductor component 13 has the first conductivity type. The third semiconductor component 13 includes a first semiconductor portion 13a and a second semiconductor portion 13b. The second semiconductor region 12b is located between the fifth partial region 11e and the first semiconductor portion 13a in the second direction D2. The fourth semiconductor region 12d is located between the second semiconductor portion 13b and the fifth partial region 11e in the second direction D2. The first semiconductor portion 13a and the second semiconductor portion 13b are electrically connected to the second electrode 52.

[0024] The fourth semiconductor component 14 is of the second conductivity type. The first semiconductor region 12a is provided between the second partial region 11b and the fourth semiconductor component 14 in the first direction D1. The first semiconductor portion 13a is provided between the second semiconductor region 12b and the fourth semiconductor component 14 in the second direction D2. The fourth semiconductor component 14 is electrically connected to the second electrode 52.

[0025] The fifth semiconductor component 15 is of the second conductivity type. The third semiconductor region 12c is provided between the third partial region 11c and the fifth semiconductor component 15 in the first direction D1. The second semiconductor portion 13b is provided between the fifth semiconductor component 15 and the fourth semiconductor region 12d in the second direction D2. The fifth semiconductor component 15 is electrically connected to the second electrode 52.

[0026] The fifth semiconductor component 15 has a lower second conductivity type impurity concentration than the fourth semiconductor component 14. In one example, the fifth semiconductor component 15 is a p+ layer, and the fourth semiconductor component 14 is a p++ layer.

[0027] The third electrode 53 includes a first conductive portion 53a. The fifth partial region 11e is provided between the first partial region 11a and the first conductive portion 53a in the first direction D1.

[0028] The first insulating member 41 includes a first insulating region 41 a provided between the fifth partial region 11 e and at least a portion of the first conductive portion 53 a .

[0029] In the semiconductor device 110, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 can be, for example, a potential based on the potential of the second electrode 52. The first electrode 51 functions as a drain electrode, for example. The second electrode 52 functions as a source electrode, for example. The third electrode 53 functions as a gate electrode. The semiconductor device 110 is, for example, a transistor (MOS transistor).

[0030] In the semiconductor device 110, the sixth partial region 11f makes Schottky contact with the second electrode 52. The portion including the sixth partial region 11f functions as a Schottky barrier diode (SBD).

[0031] For example, a reverse voltage may be applied to the semiconductor device 110. When the reverse voltage is applied, the potential of the second electrode 52 is higher than that of the first electrode 51. In this state, when holes are injected from the second electrode 52 into the transistor region, defects may occur in the semiconductor layer 10S, causing characteristic abnormalities (such as destruction). By providing an SBD in the semiconductor device 110, it is possible to control the hole injection start voltage and suppress characteristic abnormalities.

[0032] In such a structure, for example, when the hole injection start current is high, there is a tendency for surge resistance to decrease. In the embodiment, a fourth semiconductor component 14 and a fifth semiconductor component 15 are provided, each having a second conductivity type (p-type) impurity concentration different from each other. As a result, for example, even when the hole injection start current is high, a high surge resistance can be maintained. According to the embodiment, a semiconductor device with improved characteristics can be provided. For example, when the hole injection start current is low, a high surge resistance can be maintained.

[0033] In the embodiment, the first distance between the fourth semiconductor component 14 and the sixth partial region 11f is preferably shorter than the second distance between the fifth semiconductor component 15 and the sixth partial region 11f. The fourth semiconductor component 14, having a high impurity concentration, is provided near the Schottky contact. The fifth semiconductor component 15, having a relatively low impurity concentration, is provided farther from the Schottky contact. This allows for more effective maintenance of high surge withstand capability.

[0034] For example, the fourth semiconductor component 14 with a high impurity concentration located near the SBD functions as a hole injection promotion layer. Before the hole injection begins, essentially no action occurs. On the other hand, hole injection begins from the fifth semiconductor component 15 located away from the SBD. Then, a large amount of holes are injected from the fourth semiconductor component 14 functioning as a hole injection promotion layer. This generates conductivity modulation, and the resistance decreases. Due to the decrease in resistance after the start of hole injection, for example, FSM (peak 1 cycle surge current) is improved.

[0035] During transistor operation, the fourth semiconductor component 14 and the fifth semiconductor component 15 form a current path from the first electrode 51 to the second electrode 52. By making the characteristics of the current path uniform, stable transistor operation is easily achieved. Therefore, the characteristics (e.g., impurity concentration) of the fourth semiconductor component 14 and the fifth semiconductor component 15 are generally not different.

[0036] The inventors of this application focused on a special situation that may arise when an SBD is provided. Focusing on this special situation, they made the impurity concentrations in the fourth semiconductor component 14 and the fifth semiconductor component 15 different from each other. This made it possible to improve characteristics that were not generally expected.

[0037] In the embodiment, the semiconductor layer 10S (first semiconductor component 11, second semiconductor component 12, third semiconductor component 13, fourth semiconductor component 4, and fifth semiconductor component 15, etc.) comprises SiC. When the semiconductor layer 10S comprises SiC, hole injection can cause stacking faults to expand. Stacking faults can, for example, cause changes in operating characteristics. By providing SBDs, these defects are suppressed, effectively achieving the aforementioned effects of the fourth and fifth semiconductor components 14 and 15.

[0038] In the embodiment, the fourth impurity concentration of the second conductivity type in the fourth semiconductor component 14 is higher than the second impurity concentration of the second conductivity type in the second semiconductor component 12. The fifth impurity concentration of the second conductivity type in the fifth semiconductor component 15 is higher than the second impurity concentration. The second semiconductor component 12 is, for example, a p-layer. As already described, the fifth semiconductor component 15 can be a p+ layer. The fifth semiconductor component 15 can be a p++ layer. The fifth semiconductor component 15 can also be a p+ layer with a higher impurity concentration than the fourth semiconductor component 14.

[0039] In one example of the embodiment, the concentration of the fourth impurity of the second conductivity type in the fourth semiconductor component 14 may be 1.2 times or more and 50 times or less of the fifth impurity concentration in the fifth semiconductor component 15 .

[0040] In one example, the fourth impurity concentration may be greater than or equal to 1.8 times and less than or equal to 2500 times the second impurity concentration. The fifth impurity concentration may be greater than or equal to 1.5 times and less than or equal to 50 times the second impurity concentration.

[0041] In one example, the second impurity concentration is 3×10 16 cm -3 Above and 3×10 19 cm -3 In one example, the fourth impurity concentration is 1×10 19 cm -3 Above and 5×10 20 cm -3 In one example, the fifth impurity concentration is 1×10 18 cm -3 Above and 1×10 20 cm -3 the following.

[0042] In the embodiment, the third impurity concentration of the first conductivity type in the third semiconductor component 13 is higher than the first impurity concentration of the first conductivity type in the first semiconductor component 11. The first semiconductor component 11 is, for example, an n-layer. The third semiconductor component 13 is, for example, an n+ layer.

[0043] In one example, the first impurity concentration may be 1×10 15 cm -3 Above and 1×10 17 cm -3 The third impurity concentration may be 1×10 18 cm -3 Above and 5×10 20 cm -3 the following.

[0044] like Figure 1 As shown, the second partial region 11 b may be arranged between the first partial region 11 a and the fourth partial region 11 d in the second direction D2 .

[0045] like Figure 1 As shown, the second electrode 52 may include a first electrode portion 52a and a second electrode portion 52b. The second electrode portion 52b is provided between the sixth partial region 11f and the first electrode portion 52a. The second electrode portion 52b includes at least one selected from the group consisting of Ni, Ti, V, and Mo. This second electrode portion 52b facilitates achieving the desired Schottky contact.

[0046] like Figure 1 As shown, a portion of the first conductive portion 53 a of the third electrode 53 may overlap a portion of the second semiconductor region 12 b and the first semiconductor portion 13 a in the first direction D1 .

[0047] like Figure 1 As shown, the first insulating member 41 may further include a second insulating region 41 b , at least a portion of which is disposed between the first conductive portion 53 a of the third electrode 53 and the second electrode 52 .

[0048] like Figure 1 As shown, the first semiconductor component 11 may further include a seventh partial region 11g and an eighth partial region 11h. The third partial region 11c is located between the seventh partial region 11g and the first partial region 11a in the second direction D2. The direction from the seventh partial region 11g to the eighth partial region 11h is along the first direction D1.

[0049] The second semiconductor component 12 may further include a fifth semiconductor region 12e. The third semiconductor component 13 may further include a third semiconductor portion 13c. The fifth semiconductor region 12e is disposed between the eighth partial region 11h and the fifth semiconductor component 15 in the second direction D2. The fifth semiconductor component 15 is disposed between the third semiconductor portion 13c and the second semiconductor portion 13b in the second direction D2.

[0050] The third electrode 53 may further include a second conductive portion 53b. The eighth partial region 11h is disposed between the seventh partial region 11g and the second conductive portion 53b in the first direction D1.

[0051] The first insulating member 41 may further include a third insulating region 41c. At least a portion of the third insulating region 41c is provided between the eighth partial region 11h and at least a portion of the second conductive portion 53b. The second conductive portion 53b functions as a portion of the gate electrode.

[0052] The semiconductor device 110 may include multiple portions that function as gate electrodes. In one example, the first conductive portion 53a and the second conductive portion 53b may be stripes extending along a third direction D3. The third direction D3 intersects a plane including the first direction D1 and the second direction D2. The third direction D3 may be, for example, the Y-axis direction.

[0053] In the embodiment, a plurality of portions (such as the first conductive portion 53 a and the second conductive portion 53 b ) functioning as gate electrodes may be island-shaped.

[0054] The first insulating member 41 may further include a fourth insulating region 41 d . At least a portion of the fourth insulating region 41 d is disposed between the second conductive portion 53 b and the second electrode 52 .

[0055] like Figure 1 As shown, the second semiconductor component 12 may further include a sixth semiconductor region 12f. The third semiconductor component 13 may further include a fourth semiconductor portion 13d. The fourth semiconductor portion 13d is disposed between the fourth semiconductor component 14 and the sixth semiconductor region 12f in the second direction D2.

[0056] The sixth semiconductor region 12 f may be provided, for example, between the fourth semiconductor portion 13 d and the sixth partial region 11 f .

[0057] In an embodiment, the first insulating member 41 may include a first element including at least one selected from the group consisting of oxygen and nitrogen and silicon. The first insulating member 41 may include silicon oxide. The first insulating member 41 may include silicon nitride.

[0058] like Figure 1 As shown, the semiconductor device 110 may further include a sixth semiconductor component 16 of the first conductivity type. The sixth semiconductor component 16 is disposed between the first electrode 51 and the first semiconductor component 11. The concentration of the sixth impurity of the first conductivity type in the sixth semiconductor component 16 is higher than the concentration of the first impurity of the first conductivity type in the first semiconductor component 11. This provides a good electrical connection between the first electrode 51 and the semiconductor layer 10S, and thus facilitates low on-resistance.

[0059] The semiconductor layer 10S (the first semiconductor component 11, the second semiconductor component 12, the third semiconductor component 13, the fourth semiconductor component 14, and the fifth semiconductor component 15) may include at least one selected from the group consisting of 4H-SiC, 6H-SiC, and 3C-SiC. These semiconductor components may include crystals, silicon, or a compound semiconductor containing Ga.

[0060] For example, the first conductivity type impurity includes at least one selected from the group consisting of N, P, and As. For example, the second conductivity type impurity includes at least one selected from the group consisting of B, Al, and Ga.

[0061] In the embodiment, information on the length and thickness is obtained by electron microscope observation, etc. Information on the composition of the material is obtained by SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy Dispersive X-ray Spectroscopy), etc.

[0062] Implementation methods may include the following technical solutions.

[0063] (Technical Solution 1)

[0064] A semiconductor device comprising:

[0065] a first electrode;

[0066] a second electrode; and

[0067] a first semiconductor component of a first conductivity type, disposed between the first electrode and the second electrode, the first semiconductor component including a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region; a second direction from the third partial region to the second partial region intersects with a first direction from the first electrode to the second electrode; the first partial region is located between the third partial region and the second partial region in the second direction; a direction from the second partial region to the fourth partial region intersects with the first direction; a direction from the first partial region to the fifth partial region is along the first direction; a direction from the fourth partial region to the sixth partial region is along the first direction; and the sixth partial region makes Schottky contact with the second electrode;

[0068] a second semiconductor component of a second conductivity type, the second semiconductor component including a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region, a direction from the second partial region to the first semiconductor region being along the first direction, and a direction from the third partial region to the third semiconductor region being along the first direction;

[0069] a third semiconductor component of the first conductivity type, the third semiconductor component including a first semiconductor portion and a second semiconductor portion, the second semiconductor region being located between the fifth partial region and the first semiconductor portion in the second direction, the fourth semiconductor region being located between the second semiconductor portion and the fifth partial region in the second direction, the first semiconductor portion and the second semiconductor portion being electrically connected to the second electrode;

[0070] a fourth semiconductor component of the second conductivity type, wherein the first semiconductor region is disposed between the second partial region and the fourth semiconductor component in the first direction, the first semiconductor portion is disposed between the second semiconductor region and the fourth semiconductor component in the second direction, and the fourth semiconductor component is electrically connected to the second electrode;

[0071] a fifth semiconductor component of the second conductivity type, wherein the third semiconductor region is provided between the third partial region and the fifth semiconductor component in the first direction, the second semiconductor portion is provided between the fifth semiconductor component and the fourth semiconductor region in the second direction, the fifth semiconductor component is electrically connected to the second electrode, and a fifth impurity concentration of the second conductivity type in the fifth semiconductor component is lower than a fourth impurity concentration of the second conductivity type in the fourth semiconductor component;

[0072] a third electrode including a first conductive portion, the fifth partial region being disposed between the first partial region and the first conductive portion in the first direction; and

[0073] A first insulating member includes a first insulating region disposed between the fifth partial region and at least a portion of the first conductive portion.

[0074] (Technical Solution 2)

[0075] According to the semiconductor device of claim 1 , the fourth impurity concentration is greater than or equal to 1.2 times and less than or equal to 50 times the fifth impurity concentration.

[0076] (Technical Solution 3)

[0077] According to the semiconductor device of claim 1 or 2, the fourth impurity concentration is higher than the second impurity concentration of the second conductivity type in the second semiconductor component.

[0078] The fifth impurity concentration is higher than the second impurity concentration.

[0079] (Technical Solution 4)

[0080] According to the semiconductor device of claim 3, the fourth impurity concentration is 1.8 times or more and 2500 times or less of the second impurity concentration.

[0081] The fifth impurity concentration is greater than or equal to 1.5 times and less than or equal to 50 times the second impurity concentration.

[0082] (Technical Solution 5)

[0083] According to the semiconductor device of technical solution 3 or 4, the second impurity concentration is 3×10 16 cm -3 Above and 3×10 19 cm -3 the following,

[0084] The fourth impurity concentration is 1×10 19 cm -3 Above and 5×10 20 cm -3 the following,

[0085] The fifth impurity concentration is 1×10 18 cm -3 Above and 1×10 20 cm -3 the following.

[0086] (Technical Solution 6)

[0087] According to the semiconductor device of any one of claims 1 to 5, a first distance between the fourth semiconductor component and the sixth partial region is shorter than a second distance between the fifth semiconductor component and the sixth partial region.

[0088] (Technical Solution 7)

[0089] According to the semiconductor device of any one of claims 1 to 6, the second partial region is provided between the first partial region and the fourth partial region in the second direction.

[0090] (Technical Solution 8)

[0091] According to any one of technical solutions 1 to 7, the second electrode includes a first electrode portion and a second electrode portion.

[0092] The second electrode portion is disposed between the sixth portion and the first electrode portion.

[0093] The second electrode portion includes at least one selected from the group consisting of Ni, Ti, V, and Mo.

[0094] (Technical Solution 9)

[0095] According to the semiconductor device of any one of claims 1 to 8, the third impurity concentration of the first conductivity type in the third semiconductor component is higher than the first impurity concentration of the first conductivity type in the first semiconductor component.

[0096] (Technical Solution 10)

[0097] According to the semiconductor device of technical solution 9, the first impurity concentration is 1×10 15 cm -3 Above and 1×10 17 cm -3 the following,

[0098] The third impurity concentration is 1×10 18 cm -3 Above and 5×10 20 cm -3 the following.

[0099] (Technical Solution 11)

[0100] According to the semiconductor device of any one of technical solutions 1 to 10, the first insulating component further includes a second insulating region.

[0101] At least a portion of the second insulating region is disposed between the first conductive portion and the second electrode.

[0102] (Technical Solution 12)

[0103] According to the semiconductor device of any one of technical solutions 3 to 5, the first semiconductor component further includes a seventh partial region and an eighth partial region.

[0104] The third partial area is located between the seventh partial area and the first partial area in the second direction.

[0105] From the seventh partial area to the eighth partial area along the first direction,

[0106] The second semiconductor component further includes a fifth semiconductor region,

[0107] The third semiconductor component further comprises a third semiconductor region,

[0108] The fifth semiconductor region is provided between the eighth partial region and the fifth semiconductor component in the second direction,

[0109] The third electrode further includes a second conductive portion,

[0110] The eighth partial region is arranged between the seventh partial region and the second conductive portion in the first direction,

[0111] The first insulating component further includes a third insulating region,

[0112] At least a portion of the third insulating region is disposed between the eighth partial region and at least a portion of the second conductive portion.

[0113] (Technical Solution 13)

[0114] According to the semiconductor device of technical solution 12, the first conductive portion and the second conductive portion are along the third direction.

[0115] The third direction intersects a plane including the first direction and the second direction.

[0116] (Technical Solution 14)

[0117] According to the semiconductor device of technical solution 12 or 13, the first insulating component further includes a fourth insulating region.

[0118] At least a portion of the fourth insulating region is disposed between the second conductive portion and the second electrode.

[0119] (Technical Solution 15)

[0120] According to the semiconductor device of any one of technical solutions 1 to 14, the second semiconductor component further includes a sixth semiconductor region.

[0121] The third semiconductor component further includes a fourth semiconductor portion,

[0122] The fourth semiconductor portion is provided between the fourth semiconductor component and the sixth semiconductor region in the second direction.

[0123] (Technical Solution 16)

[0124] According to the semiconductor device described in Technical Solution 15, the sixth semiconductor region is arranged between the fourth semiconductor portion and the sixth partial region.

[0125] (Technical Solution 17)

[0126] According to the semiconductor device of any one of technical solutions 1 to 16, the first semiconductor component, the second semiconductor component, the third semiconductor component, and the fourth semiconductor component include SiC.

[0127] (Technical Solution 18)

[0128] According to the semiconductor device of any one of claims 1 to 17, the first insulating member includes a first element and silicon, and the first element includes at least one selected from the group consisting of oxygen and nitrogen.

[0129] (Technical Solution 19)

[0130] The semiconductor device according to any one of technical solutions 1 to 8 further includes a sixth semiconductor component of the first conductivity type,

[0131] The sixth semiconductor component is disposed between the first electrode and the first semiconductor component,

[0132] A sixth impurity concentration of the first conductivity type in the sixth semiconductor component is higher than a first impurity concentration of the first conductivity type in the first semiconductor component.

[0133] (Technical Solution 20)

[0134] According to the semiconductor device of any one of technical solutions 1 to 19, a portion of the first conductive portion overlaps with a portion of the second semiconductor region and the first semiconductor portion in the first direction.

[0135] According to the embodiment, a semiconductor device having improved characteristics can be provided.

[0136] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific structures of various elements included in a semiconductor device, such as electrodes, semiconductor components, and insulating components, are encompassed by the present invention as long as those skilled in the art can appropriately select from known configurations and implement the present invention in the same manner and achieve the same effects.

[0137] Furthermore, any combination of two or more elements of each specific example within a technically possible range is included in the scope of the present invention as long as it includes the gist of the present invention.

[0138] Furthermore, as embodiments of the present invention, all devices that can be implemented by those skilled in the art by appropriately modifying the design based on the above-described semiconductor device fall within the scope of the present invention as long as they include the gist of the present invention.

[0139] Furthermore, within the scope of the concept of the present invention, those skilled in the art can conceive of various changes and modifications, which also fall within the scope of the present invention.

[0140] While several embodiments of the present invention have been described, these embodiments are provided as examples and are not intended to limit the scope of the invention. These new embodiments may be implemented in various other ways, and various omissions, substitutions, and modifications may be made without departing from the gist of the invention. These embodiments or variations thereof are included within the scope and gist of the invention and are encompassed by the invention as set forth in the claims and their equivalents.

[0141] Description of reference numerals:

[0142] 10S: semiconductor layer, 11-16: first to sixth semiconductor components, 11a-11h: first to eighth partial regions, 12a-12f: first to sixth semiconductor regions, 13a-13d: first to fourth semiconductor parts, 41: first insulating component, 41a-41d: first to fourth insulating regions, 51-53: first to third electrodes, 52a, 52b: first and second electrode parts, 53a, 53b: first and second conductive parts, 110: semiconductor device, D1-D3: first to third directions.

Claims

1. A semiconductor device, wherein: have: a first electrode; a second electrode; A first semiconductor component of a first conductivity type is provided between the first electrode and the second electrode, and includes: a first partial region; a second partial region; a third partial region arranged to be parallel to the second partial region in a second direction intersecting the first direction from the first electrode to the second electrode, and the first partial region is located between the third partial region and the second partial region in the second direction; a fourth partial region arranged to be parallel to the second partial region in a direction intersecting the first direction; a fifth partial region arranged to be parallel to the first partial region in the first direction; and a sixth partial region arranged to be parallel to the fourth partial region in the first direction and making Schottky contact with the second electrode. A second semiconductor component of a second conductivity type includes: a first semiconductor region arranged side by side with the second partial region in the first direction; a second semiconductor region; a third semiconductor region arranged side by side with the third partial region in the first direction; and a fourth semiconductor region; The third semiconductor component of the first conductivity type is electrically connected to the second electrode and includes: a first semiconductor portion, arranged so that the second semiconductor region is located between the first semiconductor portion and the fifth partial region in the second direction; and a second semiconductor portion, arranged so that the fourth semiconductor region is located between the second semiconductor portion and the fifth partial region in the second direction; The fourth semiconductor component of the second conductivity type is electrically connected to the second electrode, and is arranged so that the first semiconductor region is located between the fourth semiconductor component and the second partial region in the first direction, and the first semiconductor portion is located between the fourth semiconductor component and the second semiconductor region in the second direction; a fifth semiconductor component of the second conductivity type electrically connected to the second electrode, arranged so that the third semiconductor region is located between the fifth semiconductor component and the third partial region in the first direction, and arranged so that the second semiconductor portion is located between the fifth semiconductor component and the fourth semiconductor region in the second direction, the fifth semiconductor component having a fifth impurity concentration of the second conductivity type lower than a fourth impurity concentration of the second conductivity type of the fourth semiconductor component; a third electrode including a first conductive portion, wherein the first conductive portion is arranged so that the fifth partial region is located between the first conductive portion and the first partial region in the first direction; and The first insulating component includes a first insulating region, and the first insulating region is arranged between the fifth partial region and at least a portion of the first conductive portion.

2. The semiconductor device according to claim 1, wherein The fourth impurity concentration is greater than or equal to 1.2 times and less than or equal to 50 times the fifth impurity concentration.

3. The semiconductor device according to claim 1, wherein the fourth impurity concentration is higher than the second impurity concentration of the second conductivity type of the second semiconductor component, The fifth impurity concentration is higher than the second impurity concentration.

4. The semiconductor device according to any one of claims 1 to 3, wherein A first distance between the fourth semiconductor component and the sixth partial region is shorter than a second distance between the fifth semiconductor component and the sixth partial region.

5. The semiconductor device according to claim 1, wherein The second electrode includes a first electrode portion and a second electrode portion, The second electrode portion is disposed between the sixth portion and the first electrode portion. The second electrode portion includes at least one selected from the group consisting of Ni, Ti, V, and Mo. The semiconductor device according to claim 1 , wherein: A third impurity concentration of the first conductivity type in the third semiconductor component is higher than a first impurity concentration of the first conductivity type in the first semiconductor component.

7. The semiconductor device according to claim 3, wherein The first semiconductor component further includes a seventh partial region and an eighth partial region. The third partial area is located between the seventh partial area and the first partial area in the second direction. From the seventh partial area to the eighth partial area along the first direction, The second semiconductor component further includes a fifth semiconductor region, The third semiconductor component further comprises a third semiconductor portion, The fifth semiconductor region is provided between the eighth partial region and the fifth semiconductor component in the second direction, The third electrode further includes a second conductive portion, The eighth partial region is arranged between the seventh partial region and the second conductive portion in the first direction, The first insulating component further includes a third insulating region, At least a portion of the third insulating region is disposed between the eighth partial region and at least a portion of the second conductive portion.

8. The semiconductor device according to claim 1, wherein The first semiconductor component, the second semiconductor component, the third semiconductor component, and the fourth semiconductor component include SiC.

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