Copper profile for chip radiator base and processing technology of copper profile

Abstract

The invention relates to the technical field of copper profiles, in particular to a copper profile for a chip radiator base and a processing technology of the copper profile. The method comprises the steps that S1, raw materials are smelted and cast to obtain an alloy casting blank; the alloy casting blank is subjected to hot rolling treatment, solution treatment, cold rolling treatment and aging treatment, and the copper profile is obtained; s2, uniformly mixing epoxy resin, organic silicon modified epoxy resin, the modified boron nitride nanosheets, aluminum oxide, mica powder, a dispersing agent, a defoaming agent, a flatting agent, a solvent and a curing agent to obtain a composite heat dissipation coating; and S3, a copper profile is taken, polished, cleaned and dried, then the surface of the copper profile is coated with the composite heat dissipation coating, and after curing, the copper profile for the chip radiator base is obtained.

Description

Technical Field

[0001] The present invention relates to the technical field of copper profiles, in particular to a copper profile for a chip radiator base and a processing technology thereof.

[0002] The design and performance of chip heat sinks are crucial in modern electronic devices, especially high-performance computers, servers, and various other electronic products. With increasing chip integration and power consumption, heat dissipation issues are becoming increasingly prominent. As the core component of the cooling system, the heat sink base's material and processing directly impact the cooling effect and product reliability.

[0003] Copper is the preferred material for heat sink bases due to its excellent thermal conductivity, good workability, and corrosion resistance. In high-power density applications, the heat dissipation capabilities of copper profiles can effectively reduce chip temperatures, thereby improving system stability and service life. To enhance heat sink performance, copper profiles are often subjected to surface treatments such as anodizing, nickel plating, and coating with heat-dissipating paint to improve their corrosion resistance and aesthetics. However, anodizing technology suffers from uneven treatment, insufficient adhesion, complex processes, and high energy consumption. Traditional nickel plating processes contain harmful heavy metals and organic solvents, causing serious environmental pollution.

[0004] Therefore, we propose a copper profile for a chip heat sink base and a processing technology thereof. Summary of the Invention

[0005] The object of the present invention is to provide a copper profile for a chip heat sink base and a processing technology thereof, so as to solve the problems raised in the prior art.

[0006] To achieve the above object, the present invention provides the following technical solutions: A process for processing a copper profile for a chip heat sink base comprises the following steps: Step S1: melting the raw materials and casting to obtain alloy ingots; hot rolling, solution treatment, cold rolling and aging treatment of the alloy ingots to obtain copper profiles; Step S2: uniformly mixing epoxy resin, organosilicon-modified epoxy resin, modified boron nitride nanosheets, aluminum oxide, mica powder, dispersant, defoamer, leveling agent, solvent, and curing agent to obtain a composite heat dissipation coating; Step S3: Take the copper profile, polish, clean, and dry it, then apply a composite heat dissipation coating on its surface. After curing, a copper profile for the chip heat sink base is obtained.

[0007] Furthermore, the raw material consists of the following components in mass percentage: Ni: 2-4%, Co: 1-2%, Sb: 0.01-0.02%; Cr: 0.03-0.05%, Ce: 0.01-0.05%, and the balance is Cu.

[0008] Furthermore, the smelting temperature is 1050-1200°C.

[0009] Furthermore, the hot rolling treatment temperature is 870-920° C., and the hot rolling treatment deformation is 40-60%.

[0010] Furthermore, the solution treatment temperature is 930-960° C., and the solution treatment time is 1-3 hours.

[0011] Furthermore, the cold rolling process is carried out at room temperature, and the deformation amount of the cold rolling process is 85-90%.

[0012] Furthermore, the aging treatment temperature is 450-600° C., and the aging treatment time is 8-12 hours.

[0013] Furthermore, the composite heat dissipation coating includes the following components by weight: 40-50 parts of epoxy resin, 10-15 parts of silicone-modified epoxy resin, 5-10 parts of modified boron nitride nanosheets, 8-12 parts of aluminum oxide, 10-15 parts of mica powder, 1-2 parts of dispersant, 0.5-1.0 parts of defoaming agent, 1-3 parts of leveling agent, 20-30 parts of solvent, and 8-12 parts of curing agent.

[0014] Furthermore, the preparation steps of the organosilicon-modified epoxy resin are as follows: Step A: Under nitrogen protection, magnolol, epichlorohydrin and benzyltriethylammonium chloride are mixed uniformly, reacted at 80-90°C for 3-5 hours, cooled to 45-55°C, sodium hydroxide solution is added, and the reaction is continued for 2-3 hours. The mixture is then subjected to rotary evaporation to obtain magnolol epoxy resin; Step B: Mix magnolol epoxy resin, 2-(2-benzimidazolyl)ethanethiol, a photoinitiator and tetrahydrofuran, react under ultraviolet light for 1-2 hours, and obtain an intermediate by rotary evaporation; Step C: The intermediate, modified organosilicon and tetrahydrofuran are mixed evenly, reacted at room temperature for 22-24 hours, and subjected to rotary evaporation to obtain organosilicon-modified epoxy resin.

[0015] Furthermore, the mass ratio of magnolol, epichlorohydrin, benzyltriethylammonium chloride and sodium hydroxide solution is 1: (2-3): (0.05-0.08): (0.5-1.0), and the concentration of the sodium hydroxide solution is 30-40wt%.

[0016] Furthermore, the mass ratio of the magnolol epoxy resin, 2-(2-benzimidazole)ethanethiol, photoinitiator and tetrahydrofuran is 1: (0.5-1.0): (0.03-0.05): (2-4).

[0017] Furthermore, the preparation steps of the 2-(2-benzimidazolyl)ethanethiol are: mixing 3-mercaptopropionic acid and 1,2-phenylenediamine, adding hydrochloric acid solution, refluxing at 100° C. for 40 hours under an argon atmosphere, neutralizing, filtering, washing, and drying to obtain 2-(2-benzimidazolyl)ethanethiol.

[0018] Furthermore, the mass ratio of the 3-mercaptopropionic acid, 1,2-phenylenediamine and hydrochloric acid solution is 1:0.8:4, and the concentration of the hydrochloric acid solution is 4 mol / L.

[0019] Furthermore, the photoinitiator is 2-hydroxy-2-methyl-1-phenyl-1-propanone.

[0020] Furthermore, the UV irradiation process conditions are: UV wavelength of 360-380nm, irradiation intensity of 25-50mW / cm 2 .

[0021] Furthermore, the mass ratio of the intermediate, modified silicone and tetrahydrofuran is 1: (0.2-0.5): (2-4).

[0022] Furthermore, the preparation method of the modified silicone is as follows: Under nitrogen protection, 3-(2,3-epoxypropoxy)propyltrimethoxysilane, furfurylamine and toluene are mixed evenly, reacted at 60-70°C for 6-8 hours, and distilled under reduced pressure to obtain furan-modified silane; furan-modified silane, N-(4-aminophenyl)maleimide and tetrahydrofuran are mixed evenly, stirred at room temperature for 22-24 hours, filtered, washed and dried to obtain modified silicone.

[0023] In the above technical solution, 3-(2,3-epoxypropoxy)propyltrimethoxysilane (KH-560) is reacted with furfurylamine to synthesize a silane coupling agent molecule containing a furan group, namely, furan-modified silane. Then, through a Diels-Alder addition reaction, it reacts with N-(4-aminophenyl)maleimide to introduce the maleimide structure and amino group into the silicone, thereby improving the heat resistance and thermal stability and obtaining a modified silicone.

[0024] Furthermore, the mass ratio of the 3-(2,3-epoxypropoxy)propyltrimethoxysilane, furfurylamine and toluene is 1:(0.4-0.5):(4-6).

[0025] Furthermore, the mass ratio of the furan-modified silane, N-(4-aminophenyl)maleimide and tetrahydrofuran is 1:(0.5-0.7):(4-6).

[0026] Furthermore, the preparation steps of the modified boron nitride nanosheets are as follows: The hydroxylated boron nitride nanosheets are ultrasonically dispersed in a mixed solution of anhydrous ethanol and deionized water, modified organosilicon is added and mixed evenly, the pH is adjusted to 3-4 using hydrochloric acid, the reaction is carried out at 60-70°C for 4-6 hours, and the modified boron nitride nanosheets are obtained after centrifugation, washing and drying.

[0027] Furthermore, the mass ratio of the hydroxylated boron nitride nanosheets to anhydrous ethanol, deionized water, and modified silicone is 1:(10-12):(2-4):(0.1-0.3).

[0028] Furthermore, the solvent is one or both of xylene and n-butanol.

[0029] Furthermore, the thickness of the dry film of the composite heat dissipation coating is 100-200 μm.

[0030] Compared with the prior art, the present invention has the following beneficial effects: 1. The present invention discloses a copper profile for a chip heat sink base and its processing technology. By designing and adjusting the ratios of Ni, Co, Sb, Cr, Ce and P in the copper profile, the synergistic effect of the rare earth element Ce with Cr and Ni effectively inhibits intergranular corrosion, and the addition of Sb further optimizes thermal conductivity and processing performance. The various components cooperate with each other to optimize the microstructure of the copper profile, significantly improving the thermal conductivity of the copper profile, while also improving the corrosion resistance and mechanical properties of the copper profile of the heat sink, which is superior to traditional pure copper or single alloy systems.

[0031] Based on the above scheme, the present invention uses epoxy resin and silicone-modified epoxy resin as the main resins, modified boron nitride nanosheets and alumina as heat-dissipating fillers, and mica powder as an anti-corrosion filler, combined with the joint action of multiple additives to produce a heat-dissipating coating with excellent thermal conductivity and anti-corrosion properties. In this scheme, the biomass raw material magnolia phenol is used to synthesize bio-based epoxy resin. The rigid biphenyl structure and flexible allyl group in the magnolia phenol molecular structure can give the resin excellent comprehensive properties. The magnolia phenol epoxy resin is then used to react with 2-(2-benzimidazole)ethanethiol to undergo a thiol-ene click reaction. The conjugated benzimidazole forms a coordination structure with the copper profile, effectively preventing the metal substrate from flash rusting during the film formation process. The metal coordination makes its cross-linking reversible, giving the coating excellent self-healing properties and anti-fouling capabilities. Finally, the amino groups in the modified silicone are used to react with the magnolia phenol epoxy resin to form an interpenetrating network of "rigid skeleton-flexible chain segments", which greatly improves the heat resistance of the coating. At the same time, the introduction of modified silicone reduces the viscosity of the resin system, increases the fluidity of the coating, improves the flexibility of the coating, and reduces the risk of cracking of the coating under temperature changes or mechanical stress. In order to further enhance the thermal conductivity of the heat dissipation coating, the present invention utilizes the Si-OH generated by the hydrolysis of Si(OCH3)3 in the modified silicone to react with the hydroxyl groups on the surface of the hydroxylated boron nitride nanosheets, successfully introducing amino groups into the boron nitride, greatly improving its dispersibility and compatibility in the epoxy resin, and reducing the interfacial thermal resistance. By matching the size gradient of the modified BN nanosheets with the alumina and coordinating the anti-corrosion barrier effect of the mica powder, the overall excellent heat dissipation and corrosion resistance of the composite heat dissipation coating are achieved, providing a comprehensive solution for the chip heat sink base with high thermal conductivity, long-term corrosion protection, self-repair function and environmentally friendly characteristics. DETAILED DESCRIPTION

[0032] The following is a clear and complete description of the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0033] In this embodiment, hydroxylated boron nitride nanosheets were purchased from Xianfeng Nano, model XFBN03-2; alumina was purchased from Xianfeng Nano, model XF391; mica powder: particle size 325 mesh, purchased from Shijiazhuang Fengming Mineral Products Co., Ltd.; epoxy resin: epoxy resin E51, epoxy equivalent 184-194g / ep, purchased from Shenzhen Jitian Chemical Co., Ltd.; defoamer is AFCONA-2727; leveling agent is BYK-3720; dispersant is BYK-163; curing agent: polyamide 650.

[0034] The following parts are by mass unless otherwise specified.

[0035] In the following examples, 2-(2-benzimidazolyl)ethanethiol is prepared by mixing 15 parts of 3-mercaptopropionic acid and 12 parts of 1,2-phenylenediamine, adding 60 parts of 4 mol / L hydrochloric acid solution, and refluxing at 100° C. for 40 h under an argon atmosphere. The mixture is neutralized, filtered, washed, and dried to obtain 2-(2-benzimidazolyl)ethanethiol.

[0036] Example 1: A process for processing a copper profile for a chip heat sink base, comprising the following steps: Step S1: melting the raw materials at a melting temperature of 1050°C, casting and cooling to obtain an alloy ingot; hot rolling the alloy ingot (hot rolling temperature of 870°C, hot rolling deformation of 40%), solution treatment (solution treatment temperature of 930°C, solution treatment time of 1 hour), cold rolling (carried out at room temperature, cold rolling deformation of 85%), and aging treatment (aging temperature of 450°C, aging time of 8 hours) to obtain a copper profile; Step S2: 40 parts of epoxy resin, 10 parts of organosilicon-modified epoxy resin, 5 parts of modified boron nitride nanosheets, 8 parts of aluminum oxide, 10 parts of mica powder, 1 part of dispersant, 0.5 parts of defoaming agent, 1 part of leveling agent, 20 parts of xylene and 8 parts of curing agent are mixed to obtain a composite heat dissipation coating; Step S3: taking a copper profile, polishing, cleaning, and drying it, and then coating its surface with a composite heat dissipation coating. After curing, a copper profile for a chip heat sink base is obtained; The raw material consists of the following components in mass percentage: Ni: 2%, Co: 1%, Sb: 0.01%; Cr: 0.03%, Ce: 0.01%, and the balance is Cu; The preparation steps of silicone modified epoxy resin are as follows: Step A: Under nitrogen protection, 10 parts of magnolol, 20 parts of epichlorohydrin and 0.5 parts of benzyltriethylammonium chloride were mixed uniformly, reacted at 80°C for 3 hours, cooled to 45°C, 5 parts of 30wt% sodium hydroxide solution were added, and the reaction was continued for 2 hours. The magnolol epoxy resin was obtained by rotary evaporation; Step B: 10 parts of magnolol epoxy resin, 5 parts of 2-(2-benzimidazolyl)ethanethiol, 0.3 parts of 2-hydroxy-2-methyl-1-phenyl-1-propanone and 20 parts of tetrahydrofuran were mixed and reacted under ultraviolet light for 1 hour. The ultraviolet light wavelength was 360 nm and the irradiation intensity was 50 mW / cm 2 , and then evaporated to obtain the intermediate; Step C: 10 parts of the intermediate, 2 parts of the modified organosilicon and 20 parts of tetrahydrofuran were mixed evenly, reacted at room temperature for 22 hours, and subjected to rotary evaporation to obtain an organosilicon-modified epoxy resin; The preparation method of modified silicone is as follows: Under nitrogen protection, 2 parts of 3-(2,3-epoxypropoxy)propyltrimethoxysilane, 0.8 parts of furfurylamine and toluene were mixed evenly, reacted at 60°C for 6 hours, and distilled under reduced pressure to obtain furan-modified silane; 2 parts of furan-modified silane, 1 part of N-(4-aminophenyl)maleimide and 8 parts of tetrahydrofuran were mixed evenly, stirred at room temperature for 22 hours, filtered, washed and dried to obtain modified silicone; The preparation steps of modified boron nitride nanosheets are as follows: 5 parts of hydroxylated boron nitride nanosheets were ultrasonically dispersed in a mixed solution of 50 parts of anhydrous ethanol and 10 parts of deionized water, 0.5 parts of modified silicone were added and mixed evenly, the pH was adjusted to 3 using 1 mol / L hydrochloric acid, and the mixture was reacted at 60°C for 4 hours. After centrifugation, washing, and drying, modified boron nitride nanosheets were obtained.

[0037] Example 2: A process for processing a copper profile for a chip heat sink base, comprising the following steps: Step S1: melting the raw materials at a melting temperature of 1100°C, casting, and cooling to obtain an alloy ingot; hot rolling the alloy ingot (hot rolling temperature of 900°C, hot rolling deformation of 50%), solution treatment (solution treatment temperature of 950°C, solution treatment time of 2 hours), cold rolling (carried out at room temperature, cold rolling deformation of 86%), and aging treatment (aging temperature of 500°C, aging time of 10 hours) to obtain a copper profile; Step S2: 45 parts of epoxy resin, 12 parts of organosilicon-modified epoxy resin, 8 parts of modified boron nitride nanosheets, 10 parts of aluminum oxide, 12 parts of mica powder, 1.5 parts of dispersant, 0.8 parts of defoaming agent, 2 parts of leveling agent, 25 parts of xylene and 10 parts of curing agent are mixed to obtain a composite heat dissipation coating; Step S3: taking a copper profile, polishing, cleaning, and drying it, and then coating its surface with a composite heat dissipation coating. After curing, a copper profile for a chip heat sink base is obtained; The raw material consists of the following components in mass percentage: Ni: 3%, Co: 1.5%, Sb: 0.015%; Cr: 0.04%, Ce: 0.03%, and the balance is Cu; The preparation steps of silicone modified epoxy resin are as follows: Step A: Under nitrogen protection, 12 parts of magnolol, 30 parts of epichlorohydrin and 0.8 parts of benzyltriethylammonium chloride were mixed uniformly, reacted at 85°C for 4 hours, cooled to 50°C, added with 9.6 parts of 35wt% sodium hydroxide solution, and continued to react for 2.5 hours. The mixture was subjected to rotary evaporation to obtain magnolol epoxy resin; Step B: 12 ​​parts of magnolol epoxy resin, 9.6 parts of 2-(2-benzimidazolyl)ethanethiol, 0.48 parts of 2-hydroxy-2-methyl-1-phenyl-1-propanone and 36 parts of tetrahydrofuran were mixed and reacted under ultraviolet light for 1.5 hours. The ultraviolet light wavelength was 370 nm and the irradiation intensity was 35 mW / cm 2 , and then evaporated to obtain the intermediate; Step C: 12 parts of the intermediate, 4 parts of the modified organosilicon and 36 parts of tetrahydrofuran were mixed evenly, reacted at room temperature for 23 hours, and subjected to rotary evaporation to obtain an organosilicon-modified epoxy resin; The preparation method of modified silicone is as follows: Under nitrogen protection, 4 parts of 3-(2,3-epoxypropoxy)propyltrimethoxysilane, 1.8 parts of furfurylamine and 20 parts of toluene were mixed evenly, reacted at 65°C for 7 hours, and distilled under reduced pressure to obtain furan-modified silane; 4 parts of furan-modified silane, 2.4 parts of N-(4-aminophenyl)maleimide and 20 parts of tetrahydrofuran were mixed evenly, stirred at room temperature for 23 hours, filtered, washed and dried to obtain modified silicone; The preparation steps of modified boron nitride nanosheets are as follows: 8 parts of hydroxylated boron nitride nanosheets were ultrasonically dispersed in a mixed solution of 88 parts of anhydrous ethanol and 24 parts of deionized water, 1.6 parts of modified silicone were added and mixed evenly, the pH was adjusted to 3.5 using 1 mol / L hydrochloric acid, and the mixture was reacted at 65°C for 5 hours. After centrifugation, washing, and drying, modified boron nitride nanosheets were obtained.

[0038] Example 3: A process for processing a copper profile for a chip heat sink base, comprising the following steps: Step S1: melting the raw materials at a melting temperature of 1200°C, casting, and cooling to obtain an alloy ingot; hot rolling the alloy ingot (hot rolling temperature of 920°C, hot rolling deformation of 60%), solution treatment (solution treatment temperature of 960°C, solution treatment time of 3 hours), cold rolling (carried out at room temperature, cold rolling deformation of 90%), and aging treatment (aging temperature of 600°C, aging time of 12 hours) to obtain a copper profile; Step S2: 50 parts of epoxy resin, 15 parts of organosilicon-modified epoxy resin, 10 parts of modified boron nitride nanosheets, 12 parts of aluminum oxide, 15 parts of mica powder, 2 parts of dispersant, 1.0 part of defoamer, 3 parts of leveling agent, 30 parts of xylene and 12 parts of curing agent are mixed to obtain a composite heat dissipation coating; Step S3: taking a copper profile, polishing, cleaning, and drying it, and then coating its surface with a composite heat dissipation coating. After curing, a copper profile for a chip heat sink base is obtained; The raw material consists of the following components in mass percentage: Ni: 4%, Co: 2%, Sb: 0.02%; Cr: 0.05%, Ce: 0.05%, and the balance is Cu; The preparation steps of silicone modified epoxy resin are as follows: Step A: Under nitrogen protection, 15 parts of magnolol, 45 parts of epichlorohydrin and 1.2 parts of benzyltriethylammonium chloride were mixed uniformly, reacted at 90°C for 5 hours, cooled to 55°C, 15 parts of 40wt% sodium hydroxide solution were added, and the reaction was continued for 3 hours. The magnolol epoxy resin was obtained by rotary evaporation; Step B: 15 parts of magnolol epoxy resin, 15 parts of 2-(2-benzimidazolyl)ethanethiol, 0.75 parts of 2-hydroxy-2-methyl-1-phenyl-1-propanone and 60 parts of tetrahydrofuran were mixed and reacted under ultraviolet light for 2 hours. The ultraviolet light wavelength was 380 nm and the irradiation intensity was 25 mW / cm 2 , and then evaporated to obtain the intermediate; Step C: 15 parts of the intermediate, 7.5 parts of the modified organosilicon and 60 parts of tetrahydrofuran were mixed evenly, reacted at room temperature for 24 hours, and subjected to rotary evaporation to obtain an organosilicon-modified epoxy resin; The preparation method of modified silicone is as follows: Under nitrogen protection, 8 parts of 3-(2,3-epoxypropoxy)propyltrimethoxysilane, 4 parts of furfurylamine and 48 parts of toluene were mixed evenly, reacted at 70°C for 8 hours, and distilled under reduced pressure to obtain furan-modified silane; 8 parts of furan-modified silane, 5.6 parts of N-(4-aminophenyl)maleimide and 48 parts of tetrahydrofuran were mixed evenly, stirred at room temperature for 24 hours, filtered, washed and dried to obtain modified silicone; The preparation steps of modified boron nitride nanosheets are as follows: 10 parts of hydroxylated boron nitride nanosheets were ultrasonically dispersed in a mixed solution of 120 parts of anhydrous ethanol and 40 parts of deionized water, 3 parts of modified silicone were added and mixed evenly, the pH was adjusted to 4 using 1 mol / L hydrochloric acid, and the mixture was reacted at 70°C for 6 hours. After centrifugation, washing, and drying, modified boron nitride nanosheets were obtained.

[0039] Comparative Example 1: A process for processing a copper profile for a chip heat sink base, comprising the following processes: Taking Example 2 as the control group, in Comparative Example 1, the modified boron nitride nanosheets were replaced with hydroxylated boron nitride nanosheets of the same mass, and the other steps were the same as in Example 2.

[0040] Comparative Example 2: A process for processing a copper profile for a chip heat sink base, comprising the following processes: Example 2 was used as a control group. Comparative Example 2 did not introduce 2-(2-benzimidazolyl)ethanethiol, and the other steps were the same as those in Example 2.

[0041] Comparative Example 3: A process for processing a copper profile for a chip heat sink base, comprising the following processes: Taking Example 2 as the control group, Comparative Example 3 replaced the modified silicone with 3-aminopropyltriethoxysilane of the same mass, and the other steps were the same as in Example 2.

[0042] Comparative Example 4: A process for processing a copper profile for a chip heat sink base, comprising the following processes: Taking Example 2 as the control group, the raw materials of Comparative Example 4 consisted of the following components in mass percentage: Ni: 3%, Co: 1.5%, Sb: 0.015%; Cr: 0.04%, and the balance was Cu; the other steps were the same as in Example 2.

[0043] Detection experiment: 1. The copper profiles for chip heat sink bases obtained in Examples 1-3 and Comparative Examples 1-3 were used to prepare samples. The tensile strength was measured according to ASTM E8M-04. A tensile test was performed using a tensile testing machine at a tensile rate of 50 mm / min.

[0044] 2. Samples were prepared from the copper profiles used for chip heat sink bases obtained in Examples 1-3 and Comparative Examples 1-3. Corrosion resistance was tested according to the neutral salt spray performance standard (GB / T 1771-2007). Test parameters: 5% NaCl mass fraction, 99.9% relative humidity, and 480 hours of salt spray time.

[0045] 3. Using the composite heat-dissipating coatings obtained in Examples 1-3 and Comparative Examples 1-3, a 100 μm-thick coating was applied to a Teflon sample using an applicator. After the coating solidified, it was peeled off the Teflon surface to prepare a 25 mm diameter specimen. The composite's thermal diffusion coefficient α was measured using a laser thermal conductivity meter, its density ρ was measured using a densitometer, and its specific heat capacity Cp was measured using a differential scanning calorimeter. The thermal conductivity of the composite was calculated using the following formula: λ = α × Cp × ρ.

[0046] The test results are as follows:

[0047] According to the data in the above table, we can clearly draw the following conclusions: 1. Compared with Examples 1-3, the corrosion resistance and thermal conductivity of the products obtained in Comparative Examples 1, 2 and 3 are all decreased, indicating that the modified boron nitride nanosheets prepared by the present invention have better compatibility and heat resistance, thereby improving the thermal conductivity and corrosion resistance of the material; at the same time, the present invention introduces 2-(2-benzimidazolyl)ethanethiol, which can synergize with modified silicone to jointly improve the corrosion resistance of magnolol epoxy resin.

[0048] 2. Compared with Examples 1-3, the tensile strength of Comparative Example 4 decreases. It can be seen that not adding Ce element to the raw materials will lead to a decrease in the mechanical properties of the material.

[0049] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations that come within the meaning and range of equivalents of the claims be embraced therein.

Claims

1. A process for processing copper profiles for chip heat sink bases, characterized by: The steps include: Step S1: melting the raw materials and casting to obtain alloy ingots; hot rolling, solution treatment, cold rolling and aging treatment of the alloy ingots to obtain copper profiles; Step S2: uniformly mixing epoxy resin, organosilicon-modified epoxy resin, modified boron nitride nanosheets, aluminum oxide, mica powder, dispersant, defoamer, leveling agent, solvent, and curing agent to obtain a composite heat dissipation coating; Step S3: Take the copper profile, polish, clean, and dry it, then apply a composite heat dissipation coating on its surface. After curing, a copper profile for the chip heat sink base is obtained.

2. The process for processing a copper profile for a chip heat sink base according to claim 1, characterized in that: The raw materials are composed of the following components in percentage by mass: Composition: Ni: 2-4%, Co: 1-2%, Sb: 0.01-0.02%; Cr: 0.03-0.05%, Ce: 0.01-0.05%, and the balance is Cu.

3. The process for processing a copper profile for a chip heat sink base according to claim 1, characterized in that: The hot rolling treatment temperature is 870° C.-920° C., and the hot rolling treatment deformation amount is 40-60%.

4. The process for processing a copper profile for a chip heat sink base according to claim 1, characterized in that: The composite heat dissipation coating includes the following components by weight: 40-50 parts of epoxy resin, 10-15 parts of organosilicon-modified epoxy resin, 5-10 parts of modified boron nitride nanosheets, 8-12 parts of aluminum oxide, 10-15 parts of mica powder, 1-2 parts of dispersant, 0.5-1.0 parts of defoaming agent, 1-3 parts of leveling agent, 20-30 parts of solvent, and 8-12 parts of curing agent.

5. The process for processing a copper profile for a chip heat sink base according to claim 4, characterized in that: The preparation steps of the organosilicon-modified epoxy resin are as follows: Step A: Under nitrogen protection, magnolol, epichlorohydrin and benzyltriethylammonium chloride are mixed uniformly, reacted at 80-90°C for 3-5 hours, cooled to 45-55°C, sodium hydroxide solution is added, and the reaction is continued for 2-3 hours. The mixture is then subjected to rotary evaporation to obtain magnolol epoxy resin; Step B: Mix magnolol epoxy resin, 2-(2-benzimidazolyl)ethanethiol, a photoinitiator and tetrahydrofuran, react under ultraviolet light for 1-2 hours, and obtain an intermediate by rotary evaporation; Step C: The intermediate, modified organosilicon and tetrahydrofuran are mixed evenly, reacted at room temperature for 22-24 hours, and subjected to rotary evaporation to obtain organosilicon-modified epoxy resin.

6. The process for processing a copper profile for a chip heat sink base according to claim 5, characterized in that: The preparation steps of the 2-(2-benzimidazolyl)ethanethiol are as follows: 3-mercaptopropionic acid and 1,2-phenylenediamine are mixed, a hydrochloric acid solution is added, and the mixture is refluxed at 100° C. for 40 hours under an argon atmosphere, followed by neutralization, suction filtration, washing, and drying to obtain 2-(2-benzimidazolyl)ethanethiol.

7. The process for processing a copper profile for a chip heat sink base according to claim 5, characterized in that: The preparation steps of the modified silicone are as follows: Under nitrogen protection, 3-(2,3-epoxypropoxy)propyltrimethoxysilane, furfurylamine and toluene are mixed evenly, reacted at 60-70°C for 6-8 hours, and distilled under reduced pressure to obtain furan-modified silane; furan-modified silane, N-(4-aminophenyl)maleimide and tetrahydrofuran are mixed evenly, stirred at room temperature for 22-24 hours, filtered, washed and dried to obtain modified silicone.

8. The process for processing a copper profile for a chip heat sink base according to claim 4, characterized in that: The preparation steps of the modified boron nitride nanosheets are as follows: The hydroxylated boron nitride nanosheets are ultrasonically dispersed in a mixed solution of anhydrous ethanol and deionized water, modified organosilicon is added and mixed evenly, the pH is adjusted to 3-4 using hydrochloric acid, the reaction is carried out at 60-70°C for 4-6 hours, and the modified boron nitride nanosheets are obtained after centrifugation, washing and drying.

9. A process for processing a copper profile for a chip heat sink base according to claim 8, characterized in that: The mass ratio of the hydroxylated boron nitride nanosheets to anhydrous ethanol, deionized water and modified organic silicon is 1:(10-12):(2-4):(0.3-0.5).

10. A copper profile for a chip heat sink base manufactured according to the processing technology according to any one of claims 1 to 9.

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