Gallium nitride switching device electrical characteristic multifunctional analysis system

Abstract

The invention relates to the technical field of semiconductors and power converters, and particularly discloses a multifunctional analysis system for electrical characteristics of a gallium nitride switching device, which is characterized in that a GUI interface implementation module comprises a double-pulse test circuit diagram displayed in a main interface, a software function selection button and a software closing button; the double-pulse test circuit diagram shows a test circuit schematic diagram of the gallium nitride switching device, the software function selection button is used for selecting different prediction analysis functions, and the software closing button is used for closing the system; and the Simulink model implementation module constructs a double-pulse test simulation circuit based on a Simscape model converted by using a Spice model, calculates simulation data, operates simulation and outputs the simulation data. According to the method, the voltage oscillation waveform and the crosstalk waveform of the gallium nitride switching device can be accurately predicted, a user can select device manufacturers and models and set parameters of a circuit used for simulation, and the voltage oscillation and crosstalk conditions of the gallium nitride switching device can be visually observed.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductors and power converters, and in particular to a multifunctional analysis system for the electrical characteristics of a gallium nitride switching device. Background Art

[0002] Currently, silicon-based insulated-gate bipolar transistors (IGBTs) are widely used as switching elements in power converters. However, IGBTs face bottlenecks such as limited switching speeds, significant switching and heat losses, and relatively low switching frequencies. With the rapid advancement of semiconductor technology, wide-bandgap semiconductor materials, particularly gallium nitride high-electron-mobility transistors (GaN HEMTs), are leading the revolution in next-generation power converters with their faster switching speeds, lower switching and heat losses, and enhanced fault tolerance.

[0003] Traditionally, power converters rely on IGBTs, whose switching frequencies are mostly between 1kHz and 20kHz. These switching speeds are not very fast, and the voltage oscillations of the switching devices are easy to control. In contrast, GaN HEMTs can achieve switching frequencies of up to hundreds of kHz. While their ultra-fast switching speeds bring about a performance leap, they also severely exacerbate the problems of switching device voltage oscillations and crosstalk between devices, posing a potential threat to peripheral equipment and potentially causing converter instability.

[0004] Given this, companies developing GaN-based products face unprecedented challenges: they must build complex test systems and procure expensive test equipment to comprehensively capture and analyze relevant data to verify device performance and reliability. This process is not only time-consuming and costly, but also places high demands on the theoretical foundation and practical skills of engineers and technicians.

[0005] Therefore, a multifunctional analysis system for the electrical characteristics of GaN switching devices has become an urgent problem to be solved. Summary of the Invention

[0006] The object of the present invention is to overcome the above problems and provide a multifunctional analysis system for the electrical characteristics of gallium nitride switching devices.

[0007] To achieve the above-mentioned purpose, the present invention provides a technical solution: a multifunctional analysis system for the electrical characteristics of a gallium nitride switching device, comprising a Simulink model implementation module and a GUI interface implementation module;

[0008] The GUI interface implementation module includes a dual-pulse test circuit diagram displayed in the main interface, a software function selection button, and a software shutdown button. The dual-pulse test circuit diagram displays a test circuit schematic diagram of a gallium nitride switching device. The software function selection button is used to select different prediction and analysis functions. The software shutdown button is used to shut down the system.

[0009] The Simulink model implementation module is based on a Simscape model converted from a Spice model, constructs a double-pulse test simulation circuit, calculates simulation data, runs the simulation, and outputs simulation data.

[0010] The multifunctional electrical characteristics analysis software for GaN switching devices uses Simulink and GUI interactive simulation. It allows selection of various actual GaN device models from GaN Systems and allows arbitrary changes in device junction temperature, DC voltage, and parasitic inductance parameters to predict and analyze GaN HEMT device voltage oscillation and crosstalk.

[0011] Furthermore, the specific method for converting the Spice model to the Simscape model is as follows:

[0012] S1. Obtain Spice model: Obtain the device Spice model file from the GaN HEMT device manufacturer;

[0013] S2. Change the model file suffix .lib to .cir to form a Spice model netlist file;

[0014] S3. Use the subcircuit2ssc function: Use the subcircuit2ssc function provided by MATLAB to convert the Spice model netlist file into the Simscape component model code;

[0015] S4. Use the ssc_build function to encapsulate the Simscape component model code into a Simscape component model, and add the model to the Simulink custom library for calling.

[0016] The device simulation model in Simulink is derived from a Spice software simulation model provided by the GaN HEMT device manufacturer. Since GaN HEMT components are not available in the MATLAB component library, to use the Spice model for the GaN switching device in Simulink, we used the MATLAB subcircuit2ssc function to convert the Spice model netlist of the actual device into the corresponding code for the Simscape component model in Simulink. The ssc_build function then packaged the Simscape component model code into a Simscape component model, which was then added to a custom Simulink library for easy access.

[0017] Furthermore, the Simulink model in the dual-pulse test simulation circuit is built using a Simscape model of a packaged GaN HEMT element; the Simulink model uses one of eight different GaN HEMT devices, and the remaining external circuit parameters are the same.

[0018] The Simscape model of the packaged GaN HEMT component was used to build Simulink models of eight double-pulse test simulation circuits. Each Simulink model used one of the eight different GaN HEMT devices, and the rest of the circuits were identical.

[0019] Furthermore, the simulation data is simulated and calculated on the Simulink model by the Solver Configuration solver; the simulation data includes the gate-source voltage v of the active tube Q2 GS , drain-source voltage v DS , drain current i D and the inductor current i L ; Inductor current i L The calculation formula is as follows:

[0020]

[0021] Where V dc is the power supply voltage, t1 and t2 are the start and end time of the first pulse, t3 and t4 are the start and end time of the second pulse, and L is the circuit load inductance.

[0022] The gate-source voltage v of active transistor Q2 GS , drain-source voltage v DS and drain current i D It is the main measurement object. The role of the passive tube Q1 is to conduct reverse conduction when the active tube Q2 is turned off. When the active tube Q2 is turned on, the inductor current i LLinear rise; when the active tube Q2 is turned off, the inductor continues to flow through the passive tube Q1, and the inductor current i L During the second pulse, it is necessary to measure the turn-on and turn-off waveforms of the power device under certain voltage and load current conditions.

[0023] Furthermore, the simulation process is started by running the code, and the simulation data is output to the current workspace of MATLAB.

[0024] The double-pulse test circuit diagram displayed in the double-pulse test circuit diagram display part is displayed by the image axis through the code imshow('circuit.bmp').

[0025] Furthermore, the software function selection button includes a voltage oscillation prediction analysis button and a crosstalk prediction analysis button. The voltage oscillation prediction analysis button is used to enter the voltage oscillation prediction analysis function, and the voltage oscillation prediction analysis function includes a device model selection drop-down menu, simulation parameter settings, prediction analysis start and close return buttons; the crosstalk prediction analysis button is used to enter the crosstalk prediction analysis function, and the crosstalk prediction analysis function includes a device model selection drop-down menu, simulation parameter settings, prediction analysis start and close return buttons.

[0026] The voltage oscillation prediction analysis button opens the related interface and functions of running voltage oscillation prediction analysis through the code run("simulation_1.m"); the crosstalk prediction analysis button opens the related interface and functions of running crosstalk prediction analysis through the code run("simulation_2.m"); the close software button clears the software running data and closes the software interface through the codes clear all and close all.

[0027] Furthermore, in the voltage oscillation prediction and analysis function and the crosstalk prediction and analysis function, the double-pulse test circuit element parameter input and the double-pulse test circuit element parameters displayed in the simulation control part are refreshed to the pre-set values ​​in the parameter input area through the code; the set_param function finds the corresponding element in the Simulink simulation model according to the corresponding path, and modifies the element parameters to the set values; the simulation model is specified to run by the sim function, and the simulation command parameters are set to start or stop the simulation model.

[0028] Furthermore, the drop-down menus in the voltage oscillation prediction and crosstalk prediction analysis functions allow you to select any of eight different GaN HEMT devices. The GUI uses code to retrieve the selected value from the drop-down menu and invoke the Simulink double-pulse test simulation model for the corresponding GaN HEMT device type. The first editable input field, Tj, in the lower left corner of the GUI corresponds to the junction temperature of the GaN HEMT device during simulation. The remaining seven editable parameter input fields correspond to the circuit components of the same name in the circuit diagram.

[0029] Furthermore, in the voltage oscillation prediction waveform display part of the voltage oscillation prediction analysis function, the simulation data is output to the MATLAB workspace through the axes function in the GUI and combined with the Simulink model. The code is run and the voltage and current waveforms of the double pulse test are drawn. After clicking the voltage oscillation prediction analysis button and waiting for the program to run, the right half of the software interface displays the voltage and current waveforms of the double pulse test experiment respectively. GS 、i L 、v DS 、i D The crosstalk prediction analysis function, device model selection part, circuit element parameter input part, and simulation control part are the same as those of the voltage oscillation prediction analysis function. In the crosstalk prediction analysis waveform display part, after clicking the crosstalk prediction analysis button and waiting for the program to finish running, the right half of the software interface will display the crosstalk prediction analysis waveform. GS Simulation waveform.

[0030] The advantages of the present invention compared with the prior art are:

[0031] 1. Through early theoretical and experimental verification, the software can accurately predict the voltage oscillation and crosstalk of GaN HEMT devices, providing engineers with a reliable reference.

[0032] 2. In this invention, users simply select the GaN HEMT device model and enter or set the relevant parameters according to the manual. They can then directly observe the device's voltage oscillation and crosstalk waveforms through an intuitive visual interface. This simple and fast operation process reduces the theoretical requirements of engineers.

[0033] 3. This invention allows for fast and flexible comparison of voltage oscillation and crosstalk waveforms of different GaN HEMT devices under the same conditions, as well as the voltage oscillation and crosstalk waveforms of the same device under different parameter settings. This capability helps engineers quickly identify the optimal device model and parameter configuration.

[0034] 4. The present invention significantly reduces the time and economic costs in the product development process and improves overall development efficiency by reducing the dependence on traditional complex test circuits and expensive test equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 This is a flow chart of the multifunctional analysis software for the electrical characteristics of gallium nitride switching devices of the present invention.

[0036] Figure 2 This is the schematic diagram of the double pulse test circuit.

[0037] Figure 3 This is a Simulink model for multifunctional analysis software for the electrical characteristics of GaN switching devices.

[0038] Figure 4 It is the main interface of the multifunctional analysis software for the electrical characteristics of GaN switching devices.

[0039] Figure 5 This is the interface for voltage oscillation prediction and analysis of GaN switching devices.

[0040] Figure 6 This is the interface for crosstalk prediction and analysis of GaN switching devices.

[0041] Figure 7 This is the voltage oscillation prediction analysis effect using the default parameters in Example 1.

[0042] Figure 8 This is the voltage oscillation prediction and analysis effect after changing the external circuit parameters in Example 1.

[0043] Figure 9 The voltage oscillation prediction and analysis results after changing the GaN HEMT model in Example 1 are shown.

[0044] Figure 10 The crosstalk prediction analysis effect using default parameters in Example 2 is shown.

[0045] Figure 11 This is the crosstalk prediction analysis effect after changing the external circuit parameters in Example 2.

[0046] Figure 12 The crosstalk prediction analysis effect after changing the GaN HEMT model in Example 2 is shown. DETAILED DESCRIPTION

[0047] Various exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that unless otherwise specifically stated, the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention.

[0048] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.

[0049] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered part of the specification.

[0050] In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not limiting. Therefore, other examples of the exemplary embodiments may have different values.

[0051] The following is a further detailed description of a multifunctional analysis system for electrical characteristics of a gallium nitride switching device according to the present invention with reference to the accompanying drawings.

[0052] Combined with attachment Figure 1-12 , the present invention is introduced in detail.

[0053] As attached Figure 1-6 , a multifunctional analysis system for the electrical characteristics of GaN switching devices, including a Simulink model implementation module and a GUI interface implementation module:

[0054] GUI interface implementation module: This includes the dual-pulse test circuit diagram displayed on the main interface, software function selection buttons, and a software shutdown button. The dual-pulse test circuit diagram shows the test circuit schematic for GaN switching devices; the software function selection buttons are used to select different predictive analysis functions, including voltage oscillation prediction analysis and crosstalk prediction analysis; and the software shutdown button shuts down the system.

[0055] Simulink model implementation module: Based on the Simscape model converted from the Spice model, it builds a dual-pulse test simulation circuit, performs simulation data calculations, and runs the simulation to output simulation data.

[0056] The multifunctional electrical characteristics analysis software for GaN switching devices uses Simulink and GUI interactive simulation. It supports the selection of various actual GaN device models from GaN Systems and allows arbitrary changes in device junction temperature, DC voltage, and parasitic inductance parameters to predict and analyze voltage oscillation and crosstalk in GaN switching devices.

[0057] Furthermore, the specific method for converting the Spice model to the Simscape model is as follows:

[0058] S1. Obtain Spice model: Obtain the device Spice model file from the GaN HEMT device manufacturer.

[0059] S2. Change the model file suffix: Change the model file suffix .lib to .cir to form a Spice model netlist file.

[0060] S3. Use the subcircuit2ssc function: Use the subcircuit2ssc function provided by MATLAB to convert the Spice model netlist file into the code of the Simscape component model.

[0061] S4. Encapsulate through the ssc_build function: Encapsulate the Simscape component model code into a Simscape component model through the ssc_build function, and add the model to the Simulink custom library for calling.

[0062] The device simulation model in Simulink is derived from a Spice software simulation model provided by the GaN HEMT device manufacturer. Since there are no GaN HEMT components in the MATLAB component library, to use the Spice model for the GaN HEMT device in Simulink, the MATLAB subcircuit2ssc function was used to convert the Spice model netlist of the actual device into the code corresponding to the Simscape component model in Simulink. The ssc_build function was then used to encapsulate the Simscape component model code into a Simscape component model, which was then added to a custom Simulink library for easy access.

[0063] Furthermore, the Simulink model in the double-pulse test simulation circuit was built using a Simscape model of a packaged GaN HEMT component; the Simulink model used one of eight different GaN HEMT devices, with the remaining external circuit parameters being the same.

[0064] The Simscape model of the packaged GaN HEMT component was used to build Simulink models of eight double-pulse test simulation circuits. Each Simulink model used one of the eight different GaN HEMT devices, and the rest of the circuits were identical.

[0065] Furthermore, the simulation data is simulated and calculated on the Simulink model by the Solver Configuration solver; the simulation data includes the gate-source voltage v of the active tube Q2 GS , drain-source voltage v DS , drain current i D and the inductor current i L ; Inductor current i L The calculation formula is as follows:

[0066]

[0067] Where V dc is the power supply voltage, t1 and t2 are the start and end time of the first pulse, t3 and t4 are the start and end time of the second pulse, and L is the circuit load inductance.

[0068] The gate-source voltage v of active transistor Q2 GS , drain-source voltage v DS and drain current i D It is the main measurement object. The role of the passive tube Q1 is to conduct reverse conduction when the active tube Q2 is turned off. When the active tube Q2 is turned on, the inductor current i L Linear rise; when the active tube Q2 is turned off, the inductor continues to flow through the passive tube Q1, and the inductor current i L During the second pulse, it is necessary to measure the turn-on and turn-off waveforms of the power device under certain voltage and load current conditions.

[0069] Furthermore, the simulation process is started by running the code, and the simulation data is output to the current workspace of MATLAB.

[0070] The double-pulse test circuit diagram displayed in the double-pulse test circuit diagram display part is displayed by the image axis through the code imshow('circuit.bmp').

[0071] Furthermore, the software function selection button includes a voltage oscillation prediction analysis button and a crosstalk prediction analysis button. The voltage oscillation prediction analysis button is used to enter the voltage oscillation prediction analysis function, and the voltage oscillation prediction analysis function includes a device model selection drop-down menu, simulation parameter settings, prediction analysis start and close return buttons; the crosstalk prediction analysis button is used to enter the crosstalk prediction analysis function, and the crosstalk prediction analysis function includes a device model selection drop-down menu, simulation parameter settings, prediction analysis start and close return buttons.

[0072] The voltage oscillation prediction analysis button opens the related interface and functions of running voltage oscillation prediction analysis through the code run("simulation_1.m"); the crosstalk prediction analysis button opens the related interface and functions of running crosstalk prediction analysis through the code run("simulation_2.m"); the close software button clears the software running data and closes the software interface through the codes clear all and close all.

[0073] Furthermore, in the voltage oscillation prediction and analysis function and the crosstalk prediction and analysis function, the double-pulse test circuit element parameter input and the double-pulse test circuit element parameters displayed in the simulation control part are refreshed to the pre-set values ​​in the parameter input area through the code; the set_param function finds the corresponding element in the Simulink simulation model according to the corresponding path, and modifies the element parameters to the set values; the simulation model is specified to run by the sim function, and the simulation command parameters are set to start or stop the simulation model.

[0074] Furthermore, the drop-down menus in the voltage oscillation prediction and crosstalk prediction analysis functions allow you to select any of eight different GaN HEMT devices. The GUI uses code to retrieve the selected value from the drop-down menu and invoke the Simulink double-pulse test simulation model for the corresponding GaN HEMT device type. The first editable input field, Tj, in the lower left corner of the GUI corresponds to the junction temperature of the GaN HEMT device during simulation. The remaining seven editable parameter input fields correspond to the circuit components of the same name in the circuit diagram.

[0075] Furthermore, in the voltage oscillation prediction waveform display part of the voltage oscillation prediction analysis function, the simulation data is output to the MATLAB workspace through the axes function in the GUI and combined with the Simulink model. The code is run and the voltage and current waveforms of the double pulse test are drawn. After clicking the voltage oscillation prediction analysis button and waiting for the program to run, the right half of the software interface displays the voltage and current waveforms of the double pulse test experiment respectively. GS 、i L 、v DS 、i D The crosstalk prediction analysis function, device model selection part, circuit element parameter input part, and simulation control part are the same as those of the voltage oscillation prediction analysis function. In the crosstalk prediction analysis waveform display part, after clicking the crosstalk prediction analysis button and waiting for the program to finish running, the right half of the software interface will display the crosstalk prediction analysis waveform. GS Simulation waveform.

[0076] The specific implementation process of the multifunctional analysis system for electrical characteristics of a gallium nitride switching device of the present invention is as follows:

[0077] Example 1

[0078] Combined with attachment Figure 4 、 56. The main interface of the prediction and analysis software includes a display section for the dual-pulse test circuit diagram used in the simulation, and a software function selection button section. The dual-pulse test circuit diagram is labeled with the names of the external circuit components used, and the names correspond to the circuit parameter input sections in the voltage oscillation prediction and analysis functions and the crosstalk prediction and analysis functions. In the software function selection button section, clicking the "Voltage Oscillation Prediction and Analysis" button will cause the software to automatically open a new interface and jump to the voltage oscillation prediction and analysis function; clicking the "Crosstalk Prediction and Analysis" button will cause the software to automatically open a new interface and jump to the crosstalk prediction and analysis function; clicking the "Close Software" button will cause the software to automatically clear all simulation data and close all open software interfaces.

[0079] Voltage Oscillation Prediction and Analysis

[0080] In the upper left corner of the Voltage Oscillation Prediction Analysis interface is a drop-down menu from which you can select eight GaN HEMT devices from GaN Systems as components for the double-pulse test simulation circuit: GS66502B, GS66504B, GS66508B, GS66508T, GS-065-060-3-B, GS-065-060-3-T, GS-065-060-5-BA, and GS-065-060-5-TA.

[0081] The lower left part is the simulation parameter setting panel. The first editable input area Tj in the lower left corner of the interface corresponds to the junction temperature of the GaN HEMT device during simulation. The remaining seven editable parameter input areas correspond to the circuit components of the same name in the circuit diagram and are used to adjust the external circuit parameters in the double pulse test simulation circuit.

[0082] Click the "Voltage Oscillation Prediction Analysis" button to start the double pulse test circuit simulation using the device junction temperature and circuit component parameters set by the user. After the program is completed, the V GS 、i L 、v DS 、i D These four simulation waveforms are displayed on the four coordinate axes on the right side of the software interface.

[0083] like Figure 7-9 , the software uses the default parameters of the voltage oscillation prediction analysis effect, and the voltage oscillation prediction analysis effect after changing the simulation parameters and changing the GaNHEMT device model.

[0084] All simulation waveforms can be displayed in zoom mode, and three zoom modes can be selected: free zoom, horizontal zoom, and vertical zoom for easy observation.

[0085] Click the "Close and return to main interface" button to close the current voltage oscillation prediction and analysis function interface and return to the main interface of the software.

[0086] Example 2

[0087] The main interface of the prediction and analysis software includes a display of the dual-pulse test circuit diagram used in the simulation and software function selection buttons. The dual-pulse test circuit diagram displays the names of the external circuit components used, corresponding to the circuit parameter input sections for the voltage oscillation prediction and analysis functions and the crosstalk prediction and analysis functions. In the software function selection button section, clicking the "Voltage Oscillation Prediction and Analysis" button automatically opens a new interface and jumps to the voltage oscillation prediction and analysis function; clicking the "Crosstalk Prediction and Analysis" button automatically opens a new interface and jumps to the crosstalk prediction and analysis function; clicking the "Close Software" button automatically clears all simulation data and closes all open software interfaces.

[0088] Crosstalk prediction analysis

[0089] The upper left portion of the crosstalk prediction analysis interface contains a drop-down menu from which you can select eight GaN Systems GaNHEMT devices as components for the double-pulse test simulation circuit: GS66502B, GS66504B, GS66508B, GS66508T, GS-065-060-3-B, GS-065-060-3-T, GS-065-060-5-BA, and GS-065-060-5-TA.

[0090] The lower left part is the simulation parameter setting panel. The first editable input area Tj in the lower left corner of the interface corresponds to the junction temperature of the GaN HEMT device during simulation. The remaining 7 editable parameter input areas correspond to the circuit elements of the same name in the circuit diagram and are used to adjust the external circuit parameters in the double pulse test simulation circuit.

[0091] Click the "Crosstalk Prediction Analysis" button to start circuit simulation prediction analysis using the device junction temperature and circuit component parameters set by the user. After the program is completed, the v GS The simulation waveform is displayed on the right coordinate axis of the software interface.

[0092] like Figure 10-12 , the software uses the default parameters to predict the crosstalk analysis effect, and the crosstalk prediction analysis effect after changing the simulation parameters and changing the GaNHEMT device model.

[0093] All simulation waveforms can be displayed in zoom mode, and three zoom modes can be selected: free zoom, horizontal zoom, and vertical zoom for easy observation.

[0094] Click the "Close and return to main interface" button to close the current crosstalk prediction analysis function interface and return to the main interface of the software.

[0095] This invention allows users to easily select different GaN HEMT device models and flexibly set parameters by directly entering them from the device manual or through the user interface. Through an intuitive visual interface, users can instantly monitor the device's voltage oscillations and crosstalk under simulated operating conditions. This enables rapid and accurate prediction of GaN HEMT voltage oscillations and crosstalk, significantly improving the efficiency and accuracy of product design and verification, and providing strong technical support for engineers.

[0096] The present invention and its embodiments are described above. This description is not restrictive. The drawings show only one embodiment of the present invention, and the actual structure is not limited thereto. In short, if a person skilled in the art is inspired by this and, without departing from the purpose of the present invention, designs structures and embodiments similar to this technical solution without inventiveness, they shall fall within the scope of protection of the present invention.

Claims

1. A multifunctional analysis system for the electrical characteristics of gallium nitride switching devices, characterized by: Including Simulink model implementation module and GUI interface implementation module; The GUI interface implementation module includes a dual-pulse test circuit diagram displayed in the main interface, a software function selection button, and a software shutdown button. The dual-pulse test circuit diagram displays a test circuit schematic diagram of a gallium nitride switching device. The software function selection button is used to select different prediction and analysis functions. The software shutdown button is used to shut down the system. The Simulink model implementation module is based on a Simscape model converted from a Spice model, constructs a double-pulse test simulation circuit, calculates simulation data, runs the simulation, and outputs simulation data.

2. The multifunctional analysis system for electrical characteristics of a gallium nitride switching device according to claim 1, characterized in that: The specific method of converting Spice model to Simscape model is as follows: S1. Obtain Spice model: Obtain the device Spice model file from the GaN HEMT device manufacturer; S2. Change the model file suffix .lib to .cir to form a Spice model netlist file; S3. Use the subcircuit2ssc function: Use the subcircuit2ssc function provided by MATLAB to convert the Spice model netlist file into the Simscape component model code; S4. Use the ssc_build function to encapsulate the Simscape component model code into a Simscape component model, and add the model to the Simulink custom library for calling.

3. The multifunctional analysis system for electrical characteristics of a gallium nitride switching device according to claim 2, characterized in that: The Simulink model in the double-pulse test simulation circuit is built using a Simscape model of a packaged GaN HEMT component; the Simulink model uses one of eight different GaN HEMT devices, and the remaining external circuit parameters are the same.

4. The multifunctional analysis system for electrical characteristics of a gallium nitride switching device according to claim 3, characterized in that: The simulation data is simulated and calculated by the Solver Configuration solver on the Simulink model; the simulation data includes the gate-source voltage v of the active tube Q2 GS , drain-source voltage v DS , drain current i D and the inductor current i L ; Inductor current i L The calculation formula is as follows:

5. The multifunctional analysis system for electrical characteristics of a gallium nitride switching device according to claim 4, characterized in that: The simulation process is started by running the code, and the simulation data is output to the current workspace of MATLAB.

6. The multifunctional analysis system for electrical characteristics of a gallium nitride switching device according to claim 5, characterized in that: The software function selection buttons include a voltage oscillation prediction and analysis button and a crosstalk prediction and analysis button. The voltage oscillation prediction and analysis button is used to enter the voltage oscillation prediction and analysis function, which includes a device model selection drop-down menu, simulation parameter settings, prediction analysis start and close return buttons; the crosstalk prediction and analysis button is used to enter the crosstalk prediction and analysis function, which includes a device model selection drop-down menu, simulation parameter settings, prediction analysis start and close return buttons.

7. The multifunctional analysis system for electrical characteristics of a gallium nitride switching device according to claim 6, characterized in that: In the voltage oscillation prediction and analysis function and the crosstalk prediction and analysis function, the double-pulse test circuit component parameter input and the double-pulse test circuit component parameters displayed in the simulation control part are refreshed to the pre-set values ​​in the parameter input area through the code; the set_param function finds the corresponding component in the Simulink simulation model according to the corresponding path, and modifies the component parameters to the set values; the simulation model is specified to run by the sim function, and the simulation command parameters are set to start or stop the simulation model.

8. The multifunctional analysis system for electrical characteristics of a gallium nitride switching device according to claim 7, characterized in that: The drop-down menus in the voltage oscillation prediction and crosstalk prediction analysis functions allow you to select any of eight different GaN HEMT devices. The GUI uses code to obtain the value selected from the drop-down menu and call the Simulink double-pulse test simulation model that contains the corresponding GaN HEMT device type.

9. The multifunctional analysis system for electrical characteristics of a gallium nitride switching device according to claim 8, characterized in that: In the voltage oscillation prediction waveform display section of the voltage oscillation prediction analysis function, the simulation data is output to the MATLAB workspace through the axes function in the GUI and combined with the Simulink model. The code is run to draw the voltage and current waveforms of the double-pulse test, and after drawing, they are displayed in the GUI interface.

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