Substrate processing method, semiconductor device manufacturing method, recording medium, and substrate processing apparatus

Abstract

The invention relates to a substrate processing method, a semiconductor device manufacturing method, a recording medium, and a substrate processing apparatus. The invention provides a technology capable of controlling the processing amount of a substrate between a plurality of substrates in a manner that the processing amount becomes a desired distribution. The method comprises: (a) a step for arranging a plurality of first substrates, each of which has a recessed structure formed on the surface thereof, in a plurality of layers in a first region in a direction perpendicular to the surface; (b) a step for supplying a first process gas to the first region; and (c) a step for supplying an inert gas to the first region, the first region including a first section including one end of the first region, a third section including the other end of the first region, and a second section therebetween. Supplying an inert gas to the second section, and supplying an inert gas to at least one of the first section and the third section at a flow rate smaller than that of the inert gas supplied to the second section; alternatively, the inert gas is supplied to the second section and the inert gas is not supplied to the first section and the third section.

Description

Technical Field

[0001] The present invention relates to a substrate processing method, a method for manufacturing a semiconductor device, a recording medium, and a substrate processing apparatus. Background Art

[0002] As one step of a substrate processing step (a semiconductor device manufacturing step), a plurality of substrates may be processed (for example, see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2016-143681 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The present invention provides a technology capable of controlling the processing throughput of a substrate so as to achieve a desired distribution among a plurality of substrates.

[0008] Means for solving problems

[0009] According to one embodiment of the present invention, a technique is provided, comprising:

[0010] (a) a step of arranging a plurality of first substrates having concave structures formed on their surfaces in a multilayer manner in a direction perpendicular to the surface within the first region;

[0011] (b) supplying a first process gas to at least a portion of the first region; and

[0012] (c) supplying an inert gas different from the first process gas to at least a portion of the first region,

[0013] The first region includes: a first section including one end of the first region; a third section including the other end of the first region; and a second section located between the first section and the third section.

[0014] In (c), the inert gas is supplied to the second section, and the inert gas is supplied to at least either the first section or the third section at a flow rate smaller than the flow rate of the inert gas supplied to the second section; or, the inert gas is supplied to the second section, and the inert gas is not supplied to the first section and the third section.

[0015] Effects of the Invention

[0016] According to the present invention, the processing throughput of a substrate can be controlled so as to have a desired distribution among a plurality of substrates. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 1 is a schematic diagram of the structure of a vertical processing furnace of a substrate processing apparatus preferably used in one embodiment of the present invention, and shows a portion of the processing furnace 202 in a vertical cross-sectional view.

[0018] Figure 2 This is a schematic diagram of a vertical processing furnace of a substrate processing apparatus preferably used in one embodiment of the present invention. Figure 1 The AA line cross-sectional view shows a portion of the processing furnace 202 .

[0019] Figure 3 1 is a schematic configuration diagram of a controller 121 of a substrate processing apparatus preferably used in one embodiment of the present invention, and is a diagram showing a control system of the controller 121 in the form of a block diagram.

[0020] Figure 4 This is a diagram showing a processing procedure in one embodiment of the present invention.

[0021] Figure 5 This is a schematic diagram of the configuration of a second nozzle preferably used in one embodiment of the present invention.

[0022] Figure 6 This is a diagram showing the flow rate distribution of the inert gas supplied from the second nozzle preferably used in one embodiment of the present invention and the flow rate distribution of the gas supplied from the first and third nozzles.

[0023] Figure 7 (a)~ Figure 7 (i) is a diagram showing a modified example of the schematic configuration diagram of the second nozzle preferably used in one embodiment of the present invention.

[0024] Figure 8 (a)~ Figure 8 (e) is a diagram showing a modified example of the flow rate distribution of the inert gas supplied from the second nozzle preferably used in one embodiment of the present invention.

[0025] Description of Reference Numerals

[0026] 200a product chip

[0027] 210a Area 1 DETAILED DESCRIPTION

[0028] <One embodiment of the present invention>

[0029] The following mainly refers to Figures 1 to 6One embodiment of the present invention will be described. It should be noted that the drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings may not necessarily be consistent with reality. Furthermore, the dimensional relationships and ratios of the elements shown in the multiple drawings may not necessarily be consistent with each other.

[0030] (1) Configuration of substrate processing apparatus

[0031] like Figure 1 As shown, the processing furnace 202 has a heater 207 as a temperature controller (heating unit). The heater 207 is cylindrical and is supported by a holding plate and installed vertically. The heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the gas by heat.

[0032] A reaction tube 203 is arranged concentrically with the heater 207 inside the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and has a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The upper end of the manifold 209 engages with the lower end of the reaction tube 203 to support the reaction tube 203. An O-ring 220a is provided between the manifold 209 and the reaction tube 203 as a sealing member. The reaction tube 203 is mounted vertically, similar to the heater 207. The reaction tube 203 and the manifold 209 primarily constitute a processing vessel (reaction container). A processing chamber 201 for processing wafers 200, serving as substrates, is formed in the hollow portion of the processing container. The processing chamber 201 is configured to accommodate wafers 200 arranged from one end (lower side) toward the other end (upper side) within the processing chamber 201. The area within the processing chamber 201 where the plurality of wafers 200 are arranged is also referred to as a substrate arrangement area (wafer arrangement area). Furthermore, the direction in which the wafers 200 are arranged within the processing chamber 201 is also referred to as a substrate arrangement direction (wafer arrangement direction). The wafers 200 include a product wafer 200a serving as a first substrate and a dummy wafer 200b serving as a second substrate.

[0033] Within processing chamber 201, nozzles 249a to 249c, serving as first to third supply units, are installed so as to penetrate the sidewalls of manifold 209. Nozzles 249a to 249c are also referred to as first to third nozzles, respectively. Nozzles 249a to 249c are made of a heat-resistant material such as quartz or SiC. Gas supply pipes 232a to 232c are connected to nozzles 249a to 249c, respectively. Nozzles 249a to 249c are separate nozzles, and nozzles 249a and 249c are located adjacent to nozzle 249b.

[0034] Gas supply pipes 232a through 232c are provided with mass flow controllers (MFCs) 241a through 241c, serving as flow controllers (flow control units), and valves 243a through 243c, serving as on / off valves, in order from the upstream side of the gas flow. Gas supply pipes 232d and 232e are connected to gas supply pipe 232a downstream of valve 243a. Gas supply pipe 232f is connected to gas supply pipe 232c downstream of valve 243c. MFCs 241d through 241f and valves 243d through 243f are provided on gas supply pipes 232d through 232f, in order from the upstream side of the gas flow.

[0035] like Figure 2 As shown, nozzles 249a-249c are positioned in the annular space between the inner wall of reaction tube 203 and wafers 200, extending upward from the lower portion of the inner wall of reaction tube 203 toward the upper portion, in the direction in which wafers 200 are arranged. Specifically, nozzles 249a-249c are positioned along the wafer arrangement area, in areas lateral to and horizontally surrounding the wafer arrangement area. When viewed from above, nozzle 249b is positioned so as to be aligned with exhaust port 231a (described later) across the center of wafer 200 loaded into processing chamber 201. In this specification, nozzles 249a, 249b, and 249c are also referred to as R1, R2, and R3, respectively.

[0036] The nozzles 249a to 249c are provided with a plurality of gas supply holes 250a to 250c on their side surfaces. The gas supply holes 250a to 250c are opened to face the exhaust port 231a in a plan view and can supply gas to the wafer 200.

[0037] like Figure 5As shown, the chip arrangement area can be considered as multiple areas. In this embodiment, the central side of the chip arrangement area in the chip arrangement direction (the direction perpendicular to the surface of the chip 200) is also referred to as the first area 210a. The two end sides of the chip arrangement area in the chip arrangement direction are also referred to as the second area 210b. The product chip 200a is arranged in the first area 210a, and the dummy chip 200b is arranged in the second area 210b. The first area 210a can be considered as multiple segments. In this embodiment, the segment on one end side (here, the upper side) of the first area 210a in the chip arrangement direction is also referred to as the first segment. In addition, the segment on the central side of the first area 210a in the chip arrangement direction is also referred to as the second segment. In addition, the segment on the other end side (here, the lower side) of the first area 210a in the chip arrangement direction is also referred to as the third segment. The first section is located adjacent to the second region 210b on one end side (here, the upper side), and the third section is located adjacent to the second region 210b on the other end side (here, the lower side).

[0038] Multiple gas supply holes 250a and 250c, serving as openings in nozzles 249a and 249c, are provided in portions (positions) facing first region 210a and second region 210b, respectively, extending from the upper portion to the lower portion of nozzles 249a and 249c. In other words, nozzles 249a and 249c are configured to supply gas toward first region 210a and second region 210b, respectively. The multiple gas supply holes 250a and 250c each have the same shape (e.g., circular), the same opening area, and are arranged at the same intervals (pitch). However, in the present invention, the shape of gas supply holes 250a and 250c is not particularly limited to the aforementioned configuration; for example, they may also be formed of one or more slit-shaped openings formed along the extending direction of nozzles 249a and 249c.

[0039] The nozzle 249b has multiple gas supply holes 250b, which serve as openings, disposed, for example, at locations facing the first region 210a (the first to third sections) and the second region 210b, extending from the top to the bottom of the nozzle 249b. In other words, the nozzle 249b is configured to supply gas to both the first region 210a and the second region 210b.

[0040] like Figure 5As shown, the gas supply holes 250b are formed, for example, in a circular or elliptical shape, and are configured so that their opening area varies depending on their placement (arrangement) position. Specifically, the opening area of ​​the gas supply holes 250b per unit length in the direction perpendicular to the surface of the wafer 200 is configured so that the portion facing the second segment is larger than the portion facing the first and third segments. The opening area of ​​the gas supply holes 250b per unit length in the direction perpendicular to the surface of the wafer 200 is configured so that the portion facing the first and third segments is larger than the portion facing the second region 201b. The opening area of ​​the gas supply holes 250b per unit length in the direction perpendicular to the surface of the wafer 200 is configured so that the portion facing the second segment is larger than the portion facing the second region 201b. By adjusting the opening area of ​​the gas supply holes 250b per unit length in the direction perpendicular to the surface of the wafer 200, the gas ejection flow rate per unit length in the direction perpendicular to the surface of the wafer 200 at that position can be adjusted. The inert gas flow rate per unit length of the nozzle 249b (the opening area of ​​the gas supply holes 250b per unit length) can be adjusted by the opening area of ​​the gas supply holes 250b and the number (pitch) of the gas supply holes 250b per unit length of the nozzle 249b.

[0041] The first process gas is supplied from the gas supply pipe 232a through the MFC 241a, valve 243a, and nozzle 249a into the process chamber 201. In this specification, the nozzle 249a (first nozzle, R1) supplying the first process gas is also referred to as a first process gas nozzle.

[0042] Inert gas is supplied into the processing chamber 201 from the gas supply pipe 232b via the MFC 241b, valve 243b, and nozzle 249b. In this specification, the nozzle 249b (second nozzle, R2) that supplies the inert gas is also referred to as the inert gas nozzle. The inert gas supplied via the nozzle 249b primarily functions as a dilution gas. Furthermore, the inert gas supplied via the nozzle 249b may also function as a purge gas. Hereinafter, the inert gas supplied from the nozzle 249b may be referred to as the dilution inert gas.

[0043] The second process gas is supplied from the gas supply pipe 232c through the MFC 241c, valve 243c, and nozzle 249c into the process chamber 201. In this specification, the nozzle 249c (third nozzle, R3) supplying the second process gas is also referred to as the second process gas nozzle.

[0044] The catalyst is supplied into the processing chamber 201 from the gas supply pipe 232 d via the MFC 241 d , the valve 243 d , and the nozzle 249 a (first nozzle, R1 ).

[0045] Inert gas is supplied from gas supply pipes 232e and 232f through MFCs 241e and 241f, valves 243e and 243f, gas supply pipes 232a and 232c, and nozzles 249a and 249c into the processing chamber 201. The inert gas supplied through nozzles 249a and 249c functions as a purge gas or a carrier gas.

[0046] The first process gas supply unit is primarily composed of the gas supply pipe 232a, the MFC 241a, and the valve 243a. The inert gas supply unit (also referred to as the inert gas supply system or the dilution inert gas supply unit) is primarily composed of the gas supply pipe 232b, the MFC 241b, and the valve 243b. The second process gas supply unit (second process gas supply system) is primarily composed of the gas supply pipe 232c, the MFC 241c, and the valve 243c. The catalyst supply unit (catalyst supply system) is primarily composed of the gas supply pipe 232d, the MFC 241d, and the valve 243d. The second inert gas supply unit (second inert gas supply system) is primarily composed of the gas supply pipes 232e and 232f, the MFCs 241e and 241f, and the valves 243e and 243f. The nozzles connected to the gas supply pipes constituting the various supply units described above may each be included in the supply unit.

[0047] Any one or all of the various supply units described above may be configured as an integrated supply system 248 in which the valves 243 a to 243 f , the MFCs 241 a to 241 f , and the like are integrated.

[0048] An exhaust port 231a for exhausting the atmosphere in the processing chamber 201 is provided below the side wall of the reaction tube 203. Figure 2As shown, the exhaust port 231a is provided at a position opposite (facing) the nozzles 249a to 249c (gas supply holes 250a to 250c) across the wafer 200 when viewed from above. The exhaust port 231a may also be provided along the lower portion to the upper portion of the side wall of the reaction tube 203, that is, along the wafer arrangement area. An exhaust pipe 231 is connected to the exhaust port 231a. A vacuum pump 246 serving as a vacuum exhaust device is connected to the exhaust pipe 231 via a pressure sensor 245 serving as a pressure detector (pressure detection unit) for detecting the pressure within the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 serving as a pressure regulator (pressure regulation unit). The APC valve 244 is configured to enable and disable vacuum evacuation within the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is in operation. Furthermore, while the vacuum pump 246 is in operation, the pressure within the processing chamber 201 can be adjusted by adjusting the valve opening based on pressure information detected by the pressure sensor 245. The exhaust system primarily comprises the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may also be included in the exhaust system.

[0049] A sealing cap 219, serving as a furnace port cover and airtightly sealing the lower opening of the manifold 209, is provided below the manifold 209. An O-ring 220b, serving as a sealing member and contacting the lower end of the manifold 209, is provided on the upper surface of the sealing cap 219. A rotating mechanism 267, which rotates the wafer boat 217 (described later), is provided below the sealing cap 219. A rotating shaft 255 of the rotating mechanism 267 passes through the sealing cap 219 and is connected to the wafer boat 217. The rotating mechanism 267 is configured to rotate the wafers 200 by rotating the wafer boat 217. The sealing cap 219 is vertically raised and lowered by a boat elevator 115, serving as an elevating mechanism, located outside the reaction tube 203. The boat elevator 115 serves as a transport device (transport mechanism) that transports the wafers 200 into and out of the processing chamber 201 by raising and lowering the sealing cap 219.

[0050] A gate 219s, serving as a furnace port cover, is installed below the manifold 209. This gate 219s can airtightly seal the lower opening of the manifold 209 when the sealing cover 219 is lowered and the wafer boat 217 is unloaded from the processing chamber 201. An O-ring 220c, serving as a sealing member and contacting the lower end of the manifold 209, is installed on the top surface of the gate 219s. The opening and closing movements (such as lifting and rotating movements) of the gate 219s are controlled by a gate opening and closing mechanism 115s.

[0051] The wafer boat 217, serving as a substrate holder, is configured to support multiple wafers 200, for example, 25 to 200 wafers 200, arranged in a horizontal position and aligned with each other in a vertical direction in multiple layers, i.e., arranged at intervals. Heat shields 218 are supported in multiple layers at the bottom of the wafer boat 217.

[0052] A temperature sensor 263 is provided within the reaction tube 203 as a temperature detector. By adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature within the processing chamber 201 is adjusted to a desired temperature distribution. The temperature sensor 263 is provided along the inner wall of the reaction tube 203.

[0053] like Figure 3 As shown, the controller 121 as a control unit (control unit) is configured as a computer having a CPU (Central Processing Unit; Central Processing Unit) 121a, a RAM (Random Access Memory; Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. An input and output device 122, such as a touch panel, is connected to the controller 121. In addition, an external storage device 123 can be connected to the controller 121. It should be noted that the substrate processing apparatus can be configured to have one control unit or to have multiple control units. That is, one control unit or multiple control units can be used to control the processing sequence described later. In addition, the multiple control units can be configured as a control system interconnected by a wired or wireless communication network, or the control system as a whole can be used to control the processing sequence described later. When the term "control unit" is used in this specification, it includes not only one control unit but also a plurality of control units and a control system composed of a plurality of control units.

[0054] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. The control program for controlling the action of the substrate processing device, the process process that records the steps and conditions of the substrate processing described later, etc. are recorded and stored in a readable manner in the storage device 121c. The process process is composed of a method in which the substrate processing device executes the various steps in the substrate processing described later through the controller 121 and can obtain a specified result, and functions as a program. Hereinafter, the process process, control program, etc. are collectively referred to as a program. In addition, the process process is also referred to as a process. When the term "program" is used in this specification, sometimes only the process is included alone, sometimes only the control program is included alone, or sometimes both are included. RAM121b is configured as a memory area (work area) that temporarily holds the program, data, etc. read by CPU121a.

[0055] The I / O port 121d is connected to the MFCs 241a to 241f, valves 243a to 243f, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotation mechanism 267, boat elevator 115, gate opening and closing mechanism 115s, and the like.

[0056] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c based on input of an operation command from the input / output device 122. The CPU 121a is configured to control, in accordance with the contents of the read recipe, the flow rate adjustment of various substances (gases) by the MFCs 241a to 241f, the opening and closing of the valves 243a to 243f, the opening and closing of the APC valve 244 and the pressure adjustment performed by the APC valve 244 using the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment of the heater 207 by the temperature sensor 263, the rotation and rotation speed adjustment of the wafer boat 217 by the rotation mechanism 267, the lifting and lowering of the wafer boat 217 by the boat elevator 115, and the opening and closing of the gate 219s by the gate opening and closing mechanism 115s.

[0057] The controller 121 can be constructed by installing the above-mentioned program recorded and stored in the external storage device 123 into the computer. The external storage device 123 includes, for example, a magnetic disk such as an HDD, an optical disk such as a CD, an optical magnetic disk such as an MO, a USB memory, a semiconductor memory such as an SSD, etc. The storage device 121c and the external storage device 123 constitute a recording medium that can be read by a computer. Hereinafter, they will be collectively referred to as recording media. When the term recording medium is used in this specification, sometimes only the storage device 121c is included alone, sometimes only the external storage device 123 is included alone, or sometimes both are included. It should be noted that, instead of using the external storage device 123, a communication unit such as the Internet or a dedicated line can be used to provide the program to the computer.

[0058] (2) Substrate processing

[0059] As one of the steps in the manufacturing process of semiconductor devices, the main Figure 4 An example sequence of a method for processing a substrate using the aforementioned substrate processing apparatus will be described. This example sequence involves forming a film on a wafer 200, which is a substrate having concave structures such as trenches, grooves, and holes formed on its surface as three-dimensional structures. In the following description, the operations of the various components of the substrate processing apparatus are controlled by the controller 121.

[0060] In the processing sequence of this method, there are:

[0061] (a) Step A of arranging a plurality of first substrates having concave structures formed on the surface of a product wafer 200a in a multilayer manner in a direction perpendicular to the surface within a first region 210a;

[0062] (b) step B of supplying a first process gas to at least a portion of the first region 210a; and

[0063] (c) step C of supplying an inert gas different from the first process gas to at least a portion of the first region 210a,

[0064] The first region 210a includes a first segment including one end of the first region 210a, a third segment including the other end of the first region 210a, and a second segment located between the first segment and the third segment.

[0065] In step C, inert gas is supplied to the second section, and inert gas is supplied to at least one of the first section and the third section at a flow rate smaller than the flow rate of inert gas supplied to the second section; or, inert gas is supplied to the second section, and inert gas is not supplied to the first section and the third section.

[0066] In this method, the case where step A includes placing a dummy wafer 200b, serving as a second substrate and having a smaller surface area than the product wafer 200a, in a second region 210b different from the first region 210a will be described. The dummy wafer 200b can be a bare wafer with no surface pattern or a wafer with a surface pattern. Even when a wafer with a surface pattern is used as the dummy wafer 200b, the surface area of ​​the dummy wafer 200b is smaller than that of the product wafer 200a. The product wafer 200a and dummy wafer 200b are sometimes collectively referred to as wafer 200.

[0067] In this method, the following case is described,

[0068] The method further comprises the step (d) of supplying a second process gas containing a predetermined element and different from the first process gas to the first region 210a.

[0069] By performing a cycle including steps B, C, and D a predetermined number of times (n times, where n is an integer of 1 or 2 or greater), films containing a predetermined element are formed on the plurality of product wafers 200 a .

[0070] In this embodiment, a case where the second process gas containing a predetermined element is used as the source gas and the first process gas is used as the reaction gas will be described.

[0071] In this method, in step B, the first process gas (reaction gas) is supplied from nozzle 249a (R1, first process gas nozzle). In step C, the inert gas is supplied from nozzle 249b (R2, inert gas nozzle). In step D, the second process gas (raw material gas) is supplied from nozzle 249c (R3, second process gas nozzle).

[0072] In this embodiment, a case where a catalyst is supplied simultaneously with supplying the first process gas and the second process gas in steps B and D, respectively, will be described.

[0073] In addition, in this embodiment, the case where the inert gas is supplied to all of the first to third zones in step C will be described.

[0074] In this specification, for convenience, the above-mentioned processing sequence may be expressed as follows. The same expression is also used in the following description of modified examples and other aspects.

[0075] {(R3: second process gas) + (R1: catalyst) → (R1: first process gas) + (R1: catalyst) + (R2: inert gas)} × n

[0076] In this specification, the term "wafer" may refer to the wafer itself or to a laminate of a wafer and a predetermined layer or film formed on its surface. The term "surface of a wafer" may refer to the surface of the wafer itself or to the surface of a predetermined layer, etc., formed on the wafer. In this specification, "forming a predetermined layer on a wafer" may refer to forming the predetermined layer directly on the surface of the wafer itself or to forming the predetermined layer on a layer, etc., formed on the wafer. The term "substrate" used in this specification is also synonymous with the term "wafer."

[0077] The term "layer" used in this specification includes at least one of a continuous layer and a discontinuous layer. For example, the first layer and the second layer described below may include a continuous layer, a discontinuous layer, or both.

[0078] In this specification, when describing the adsorption and reaction of the first processing gas and the second processing gas on the surface of the chip 200, it not only includes the way in which they adsorb and react on the chip surface in an undecomposed state, but also includes the way in which they decompose and the intermediates generated by the detachment of their ligands adsorb and react on the surface of the chip 200.

[0079] (Wafer filling and wafer boat loading)

[0080] After a plurality of wafers 200 (product wafers 200a and dummy wafers 200b) are loaded (wafer filling) into the wafer boat 217, the gate opening and closing mechanism 115s moves the gate 219s to open the lower end opening of the manifold 209 (gate opening). When the wafers 200 are loaded into the wafer boat 217, the dummy wafers 200b are loaded on the upper and lower ends of the wafer boat 217, and the product wafers 200a are loaded on the central portion sandwiched between the upper and lower ends of the wafer boat 217. Figure 1 As shown, the wafer boat 217 supporting multiple wafers 200 is lifted by the wafer boat elevator 115 and carried into the processing chamber 201 (wafer boat loading). In this state, the sealing cover 219 is sealed to the lower end of the manifold 209 via the O-ring 220b. In this way, multiple product wafers 200a are arranged in multiple layers in the first area 210a in a direction perpendicular to the surface of the product wafers 200a, and dummy wafers 200b are arranged in the second area 210b (step A). ​​The dummy wafers 200b are not arranged in the first area 210a. It should be noted that if there are empty slots in a portion of the first area 210a, dummy wafers 200b can be arranged (filled) in these slots. However, in this case, it is also preferable that the ratio of the number of dummy wafers 200b arranged in the first area 210a is sufficiently small (for example, less than 1 / 10) relative to the number of product wafers 200a.

[0081] (Pressure regulation and temperature regulation)

[0082] After the wafer boat is loaded, vacuum pump 246 performs vacuum evacuation (decompression evacuation) to reduce the pressure (vacuum level) within processing chamber 201, i.e., the space containing wafers 200, to the desired processing space. The pressure within processing chamber 201 is measured by pressure sensor 245, and feedback control (pressure regulation) is performed on APC valve 244 based on this pressure information. Heater 207 heats the wafers 200 within processing chamber 201 to the desired processing temperature. Feedback control (temperature regulation) of the power supply to heater 207 is performed based on the temperature information detected by temperature sensor 263 to achieve the desired temperature distribution within processing chamber 201. Rotation of wafer 200 by rotation mechanism 267 is also initiated. Exhausting processing chamber 201, heating wafer 200, and rotating wafer 200 continue for at least until processing of wafer 200 is completed.

[0083] (Film forming treatment)

[0084] Then, perform steps B, C, and D in the following order.

[0085] [Step D]

[0086] In this step, a second process gas containing a predetermined element and a catalyst are supplied to the first region 201 a and the second region 201 b in the process chamber 201 .

[0087] Specifically, valves 243c and 243d are opened to allow the second process gas to flow into gas supply pipe 232c, and the catalyst to flow into gas supply pipe 232d. The second process gas and catalyst are flow-regulated by MFCs 241c and 241d, respectively, and supplied into processing chamber 201 via nozzles 249c and 249a. After being supplied into processing chamber 201, they are mixed and exhausted from exhaust port 231a. At this time, the second process gas and catalyst are supplied to wafer 200 (second process gas + catalyst supply). At this time, valves 243e and 243f can also be opened to supply inert gas into processing chamber 201 via nozzles 249a (R1) and 249c (R3), respectively.

[0088] At this time, valve 243b is opened to allow inert gas to flow into gas supply pipe 232b. The inert gas is flow-regulated by MFC 241b, supplied into processing chamber 201 through nozzle 249b (R2), and exhausted from exhaust port 231a.

[0089] The treatment conditions in this step may include:

[0090] Second process gas supply flow rate: 1-2000 sccm

[0091] Catalyst supply flow rate: 1~2000sccm

[0092] Inert gas supply flow rate (R2): 1 to 1000 sccm

[0093] Inert gas supply flow rate (each R1, R3): 0 to 20,000 sccm

[0094] Each gas supply time: 1 to 100 seconds, preferably 5 to 60 seconds

[0095] Processing temperature: room temperature (25°C) ~ 200°C, preferably room temperature ~ 150°C

[0096] Processing pressure: 133~1333Pa.

[0097] However, the flow rate of the inert gas supplied from R2 is preferably smaller than the flow rate of the inert gas supplied from R2 in step B described later.

[0098] It should be noted that the expression of a numerical range such as "25 to 120°C" in this specification means that the lower limit and the upper limit are included in the range. Therefore, for example, "25 to 120°C" means "above 25°C and below 120°C". The same applies to other numerical ranges. In addition, the processing temperature in this specification refers to the temperature of the chip 200 or the temperature in the processing chamber 201, and the processing pressure refers to the pressure in the processing chamber 201, in other words, the pressure of the space where the chip 200 is located. In addition, the processing time refers to the time during which the processing continues. In addition, when the supply flow rate includes 0 sccm, 0 sccm means that the substance (gas) is not supplied. This is also the case in the following description.

[0099] By supplying a second processing gas containing a specified element (i.e., a raw material gas containing a specified element) to the first region 201a and the second region 201b under the above-mentioned processing conditions, the second processing gas can be adsorbed on the surface of the chip 200 (the upper surface and inner surface of the concave structure) to form a first layer containing the specified element.

[0100] In this step, by supplying the catalyst together with the second process gas, it is possible to carry out the above-mentioned reaction (particularly adsorption) under the above-mentioned low temperature conditions.

[0101] It should be noted that, according to the configuration of the gas supply holes 250a and 250c, in this step, the second process gas and the catalyst are supplied at the same flow rate to any of the first region 201a and the second region 201b (see FIG. Figure 6 ).

[0102] In addition, according to the structure of the gas supply hole 250b, the inert gas supplied from the nozzle 249b (R2) is Figure 6 The flow rate distribution shown is for supply to the first region 201a and the second region 201b. The flow rate distribution of the inert gas supplied (ejected) from the nozzle 249b (R2) will be described in detail later. It should be noted that the flow rate distribution of the inert gas supplied from the nozzle 249b (R2) in this step may differ from the flow rate distribution of the inert gas supplied from the nozzle 249b (R2) in steps B and C described later.

[0103] When the predetermined element is silicon (Si), a silane-based gas can be used as the second process gas. For example, a silane-based gas containing Si and a halogen, i.e., a halosilane-based gas, can be used. As the halogen, at least one of chlorine (Cl), fluorine (F), bromine (Br), and iodine (I) can be used. For example, a chlorosilane-based gas containing Si and Cl can be used as the halosilane-based gas.

[0104] As the second processing gas, for example, monochlorosilane (SiH3Cl) gas, dichlorosilane (SiH2Cl2) gas, trichlorosilane (SiHCl3) gas, tetrachlorosilane (SiCl4) gas, hexachlorodisilane (Si2Cl6) gas, octachlorotrisilane (Si3Cl8) gas, hexachlorodisiloxane (Cl3Si-O-SiCl3) gas, octachlorotrisiloxane (Cl3Si-O-SiCl2-O-SiCl3) gas, 1,1,3,3 -Chlorosilane gases such as tetrachloro-1,3-disilacyclobutane (C2H4Cl4Si2) gas, bis(trichlorosilyl)methane ((SiCl3)2CH2) gas, 1,2-bis(trichlorosilyl)ethane ((SiCl3)2C2H4) gas, 1,1,2,2-tetrachloro-1,2-dimethyldisilane ((CH3)2Si2Cl4) gas, and 1,2-dichloro-1,1,2,2-tetramethyldisilane ((CH3)4Si2Cl2) gas.

[0105] As the second process gas, for example, a fluorosilane-based gas, a bromosilane-based gas, or an iodosilane-based gas may be used in addition to the chlorosilane-based gas.

[0106] As the second processing gas, in addition to the above-mentioned processing gases, aminosilane-based gases such as tetrakis(dimethylamino)silane (Si[N(CH3)2]4) gas, tris(dimethylamino)silane (Si[N(CH3)2]3H) gas, bis(diethylamino)silane (Si[N(C2H5)2]2H2) gas, bis(tert-butylamino)silane (SiH2[NH(C4H9)]2) gas, and (diisopropylamino)silane (SiH3[N(C3H7)2]) gas, i.e., gases containing Si and amino groups, can also be used.

[0107] As the second process gas, one or more of the above-mentioned gases can be used.

[0108] As a catalyst, for example, an amine gas (amine substance) containing carbon (C), nitrogen (N) and hydrogen (H) can be used. As the amine gas, a cyclic amine gas (cyclic amine substance) or a chain amine gas (chain amine substance) can be used. As a catalyst, for example, pyridine (C5H5N), aminopyridine (C5H6N2), picoline (C6H7N), lutidine (C7H9N), pyrimidine (C4H4N2), quinoline (C9H7N), piperazine (C4H 10 N2), piperidine (C5H 11 Cyclic amines such as triethylamine ((C2H5)3N), diethylamine ((C2H5)2NH), monoethylamine ((C2H5)NH2), trimethylamine ((CH3)3N), dimethylamine ((CH3)2NH), and monomethylamine ((CH3)NH2) can be used as catalysts. One or more of these catalysts can be used. This also applies to the steps described below.

[0109] As the inert gas, for example, rare gases such as nitrogen (N2), argon (Ar), helium (He), neon (Ne), and xenon (Xe) can be used. As the inert gas, one or more of these can be used. This also applies to the steps described below.

[0110] After the first layer is formed on the surface of the wafer 200 (the upper surface and inner surface of the concave structure), the valves 243c and 243d are closed to stop the supply of the second process gas and the catalyst into the processing chamber 201. The valve 243b remains open to continue supplying the inert gas into the processing chamber 201. Then, the processing chamber 201 is vacuum-exhausted to remove the gaseous substances and the like remaining in the processing chamber 201 from the processing chamber 201. At this time, the valves 243e and 243f are opened to supply the inert gas into the processing chamber 201 through the nozzles 249a and 249c. The inert gas supplied from the nozzles 249a and 249c acts as a purge gas, thereby purging (purging) the space in which the wafer 200 is located, i.e., the processing chamber 201.

[0111] [Step B + Step C]

[0112] After step D is completed, the first process gas, the catalyst, and the dilution inert gas are supplied to the first region 201a and the second region 201b in the process chamber 201. In this embodiment, step B and step C are performed simultaneously.

[0113] Specifically, valves 243a and 243d are opened to allow the first process gas to flow into gas supply pipe 232a, and the catalyst to flow into gas supply pipe 232d. The first process gas and catalyst are flow-regulated by MFCs 241a and 241d, respectively, and supplied into process chamber 201 via nozzle 249a (R1). Exhaust is then exhausted from exhaust port 231a. At this point, the second process gas and catalyst are supplied to wafer 200 (second process gas + catalyst supply: step B). Alternatively, valves 243e and 243f may be opened to supply an inert gas into process chamber 201 via nozzles 249a (R1) and 249c (R3), respectively.

[0114] At this time, valve 243b is kept open to allow the inert gas to continue to flow into gas supply pipe 232b. The inert gas is flow-regulated by MFC 241b and supplied into processing chamber 201 through nozzle 249b (R2) and exhausted from exhaust port 231a (step C).

[0115] The treatment conditions in this step (step B + step C) include:

[0116] First process gas supply flow rate: 1-2000 sccm

[0117] Catalyst supply flow rate: 1~2000sccm

[0118] Inert gas supply flow rate (R2): 1 to 20,000 sccm

[0119] Inert gas supply flow rate (each R1, R3): 0 to 20,000 sccm

[0120] Each gas supply time: 1 to 100 seconds, preferably 5 to 60 seconds

[0121] Processing temperature: room temperature (25°C) ~ 200°C, preferably room temperature ~ 150°C

[0122] Processing pressure: 133~1333Pa

[0123] By supplying the first process gas (reactive gas) to the wafer 200 under the above process conditions, at least a portion of the first layer formed on the wafer 200 reacts with the first process gas and is modified. As a result, a second layer is formed on the wafer 200 as a modified layer of the first layer.

[0124] In this step, by supplying the catalyst together with the first process gas, the above-mentioned reaction can be carried out under the low-temperature conditions as described above.

[0125] In step B, the first process gas is supplied under conditions where the probability of physical adsorption of the first process gas onto the plurality of wafers 200 is sufficiently high, for example, under conditions where the probability of physical adsorption is higher than the probability of chemical adsorption (i.e., under conditions where physical adsorption is dominant). Specifically, the first process gas is supplied under the low temperature conditions described above.

[0126] When the treatment temperature is lower than room temperature (25°C), chemical adsorption may be suppressed, and the rate of modification of the first layer by the chemically adsorbed first process gas (i.e., the film formation rate) may be reduced. By setting the treatment temperature to 25°C or higher, chemical adsorption can be promoted, thereby increasing the rate of modification of the first layer.

[0127] When the processing temperature exceeds 200°C, excessive heat may be applied to the wafer 200, making it difficult to effectively control the thermal history of the wafer 200. Furthermore, when the processing temperature exceeds 200°C, the probability of physical adsorption of the first process gas on the wafer 200 decreases, and the modification rate (i.e., film formation rate) of the first layer due to physical adsorption of the first process gas may decrease. In particular, when using a gas that easily physically adsorbs as the first process gas, the reduced probability of physical adsorption may prevent the desired film formation rate from being achieved. By keeping the processing temperature below 200°C, the heat applied to the wafer 200 can be reduced, effectively controlling the thermal history of the wafer 200. Furthermore, keeping the processing temperature below 200°C increases the probability of physical adsorption of the first process gas on the wafer 200, ensuring the modification rate of the first layer due to physical adsorption. In particular, when using a gas that easily physically adsorbs as the first process gas, the increased probability of physical adsorption facilitates achieving the desired film formation rate. Furthermore, since the contribution of physical adsorption to the film formation rate increases, the effect achieved by supplying the inert gas in step C becomes more significant. By setting the process temperature below 150°C, the amount of heat applied to the wafer 200 can be further reduced, allowing for better control of the thermal history of the wafer 200. Furthermore, by setting the process temperature below 150°C, the probability of physical adsorption of the first process gas on the wafer 200 can be further increased, thereby increasing the rate of modification of the first layer due to physical adsorption. Furthermore, since the contribution of physical adsorption to the film formation rate increases, the effect achieved by supplying the inert gas in step C becomes even more significant.

[0128] It should be noted that, according to the configuration of the gas supply holes 250a and 250c, in step B, the second process gas and the catalyst are supplied at the same flow rate to either the first region 201a or the second region 201b (see FIG. Figure 6 ).

[0129] Furthermore, according to the configuration of the gas supply holes 250b, in step C, the inert gas is supplied to the first and third sections at a flow rate (second flow rate) smaller than the flow rate (first flow rate) of the inert gas supplied to the second section (see FIG. Figure 5 、 Figure 6 ).

[0130] Furthermore, according to the configuration of the gas supply holes 250b, in step C, the inert gas is supplied to the second region 201b at a flow rate smaller than the flow rate of the inert gas supplied to the first and third sections (see FIG. Figure 5 、 Figure 6 ).

[0131] Furthermore, according to the configuration of the gas supply holes 250b, in step C, the inert gas is supplied to the second region 201b at a flow rate smaller than the flow rate of the inert gas supplied to the second section (see FIG. Figure 5 、 Figure 6 ).

[0132] In step C, an inert gas is supplied so as to suppress physical adsorption of the first process gas onto the surfaces of the plurality of product wafers 200 a .

[0133] In step C, the inert gas is supplied so as to desorb at least a portion of the first process gas physically adsorbed onto the plurality of product wafers 200 a .

[0134] In step C, an inert gas is supplied to purge the first process gas remaining in the space between the plurality of product wafers 200 a .

[0135] As the first processing gas, for example, a gas containing oxygen (O) and H (a substance containing O and H, an oxidizing gas) can be used. As the gas containing O and H, water vapor (H2O gas), hydrogen peroxide (H2O2) gas, hydrogen (H2) gas + oxygen (O2) gas, H2 gas + ozone (O3) gas, etc. can be used. That is, as the gas containing O and H, a gas containing O + a gas containing H can also be used. In this case, as the gas containing H, deuterium ( 2 H2) gas.

[0136] In this specification, the term "H2 gas + O2 gas" used herein refers to a mixed gas of H2 gas and O2 gas. When supplying a mixed gas, the two gases may be mixed in a supply pipe (premixed) and then supplied to the processing chamber 201. Alternatively, the two gases may be supplied to the processing chamber 201 from separate supply pipes and then mixed in the processing chamber 201 (postmixed).

[0137] In addition, as the first processing gas, an O-containing gas (O-containing substance, oxidizing gas) can be used. As the O-containing gas, O2 gas, ozone (O3) gas, nitrous oxide (N2O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO2) gas, carbon monoxide (CO) gas, carbon dioxide (CO2) gas, etc. can be used.

[0138] As the first processing gas, one or more of these can be used.

[0139] Furthermore, as the first process gas, a gas that is easily physically adsorbed onto the wafer 200 can be preferably used. For example, an O-containing gas (oxidizing gas) can be preferably used as a gas that is easily physically adsorbed onto the wafer 200. Furthermore, as a gas that is easily physically adsorbed onto the wafer 200, a gas containing O and H, particularly a gas containing O and H in one molecule (i.e., H2O gas, H2O2 gas, etc.) can be more preferably used.

[0140] After the first layer formed on the surface of the wafer 200 (the upper surface and inner surface of the concave structure) is transformed into the second layer, the valves 243a and 243d are closed, and the supply of the first process gas and the catalyst into the process chamber 201 is stopped. Then, the process chamber 201 is vacuum-exhausted to remove the gaseous substances and the like remaining in the process chamber 201 from the process chamber 201. At this time, the valves 243e and 243f are opened, and an inert gas is supplied to the process chamber 201 through the nozzles 249a and 249c. In addition, at this time, the valve 243b remains open, reducing the flow rate of the inert gas supplied from the nozzle 249b to the process chamber 201. The inert gas supplied from the nozzles 249a, 249b, and 249c acts as a purge gas, thereby purging (scavenging) the space where the wafer 200 is located, that is, the process chamber 201. It should be noted that, at this time, the valve 243 b may be closed to stop the supply of the inert gas from the nozzle 249 b into the processing chamber 201 .

[0141] [Number of times of implementation]

[0142] By performing the above-mentioned steps B to D in the above-mentioned order for n times (n is an integer greater than or equal to 1 or 2), a film having a desired composition can be formed on the surface of the wafer 200 (the upper surface and inner surface of the concave structure). For example, when the above-mentioned Si-containing gas is used as the second process gas (raw material gas) and the above-mentioned O-containing gas (oxidizing gas) is used as the first process gas (reactive gas), a silicon oxide film (SiO film) is formed on the surface of the wafer 200. The above-mentioned cycle is preferably repeated multiple times. In other words, it is preferred that the thickness of the second layer formed in each cycle is thinner than the desired film thickness, and the above-mentioned cycle is repeated multiple times until the film thickness of the film formed by stacking the second layer reaches the desired film thickness.

[0143] (Post-purge and atmospheric pressure recovery)

[0144] After the film formation process is completed, an inert gas is supplied as a purge gas into the processing chamber 201 from nozzles 249a and 249c, respectively, and then exhausted from exhaust port 231a. Thus, the processing chamber 201 is purged, and the gas, reaction byproducts, etc. remaining in the processing chamber 201 are removed from the processing chamber 201 (post-purge). The atmosphere in the processing chamber 201 is then replaced with the inert gas (inert gas replacement), and the pressure in the processing chamber 201 is restored to normal pressure (atmospheric pressure recovery).

[0145] (Wafer boat unloading and wafer removal)

[0146] The boat elevator 115 then lowers the seal cap 219, opening the lower end of the manifold 209. The processed wafers 200, supported by the boat 217, are then unloaded from the lower end of the manifold 209 to the exterior of the reaction tube 203 (boat unloading). After the boat is unloaded, the gate 219s is moved, sealing the lower end of the manifold 209 with the gate 219s via the O-ring 220c (gate closing). After the processed wafers 200 are unloaded from the boat 217 (wafer removal).

[0147] (3) Effects of this method

[0148] According to this aspect, one or more of the following effects can be obtained.

[0149] (a) In step C, the inert gas is supplied to the first and third sections at a flow rate (second flow rate) that is smaller than the flow rate (first flow rate) of the inert gas supplied to the second section when the first process gas is supplied in step B. This allows the throughput of the product wafers 200a to be controlled so that it is distributed as desired, for example, uniform across the plurality of product wafers 200a. This will be described below.

[0150] For example, a portion of the first process gas supplied to the wafer 200 in step B may be adsorbed onto the surface of the wafer 200 and then, at a predetermined timing, desorbed from the wafer 200 and moved within the processing chamber 201. The first process gas moving within the processing chamber 201 may be re-adsorbed onto other wafers 200 within the processing chamber 201. Hereinafter, the phenomenon of process gas desorption from the wafer 200, movement, and re-adsorption onto other wafers 200 after the supply of the process gas is collectively referred to as "diffusion."

[0151] Here, within the wafer arrangement region within the processing chamber 201, the amount of the first process gas released from the wafer 200 may vary depending on the region. Specifically, the concentration of the first process gas released from the wafer 200 (i.e., the amount of the first process gas per unit volume of the space within the wafer arrangement region) may vary between the second segment at the center of the first region 201a and the first and third segments at the ends adjacent to the second region 201b (hereinafter sometimes referred to as "between segments"). More details are as follows.

[0152] Product wafers 200a, which have a larger surface area than dummy wafers 200b, are arranged in the first region 201a (particularly the second section) of the wafer arrangement area. Therefore, the total substrate surface area per unit volume in the first region 201a is greater than the total substrate surface area per unit volume in the second region 201b. Consequently, the concentration of the first process gas released from the wafers 200 after the first process gas is supplied is relatively high in the first region 201a. On the other hand, dummy wafers 200b, which have a smaller surface area than product wafers 200a, are arranged in the second region 201b of the wafer arrangement area. Therefore, the total substrate surface area per unit volume in the second region 201b is less than the total substrate surface area per unit volume in the first region 201a (particularly the second section). Consequently, the concentration of the first process gas released from the wafers 200 after the first process gas is supplied is relatively low in the second region 201b. As described above, when a concentration difference in the first process gas released from the wafer 200 occurs between the first region 201a and the second region 201b, the first process gas released from the product wafer 200a migrates (spreads) from the first and third segments, the ends of the first region 201a adjacent to the second region 201b, toward the second region 201b. Consequently, the concentration of the first process gas released from the product wafer 200a decreases in the first and third segments. On the other hand, since the second segment is not adjacent to the second region 201b, the process gas released from the product wafer 200a is less likely to migrate (outflow) in the second segment. Consequently, the concentration of the first process gas released from the wafer 2000 increases in the second segment compared to the first and third segments.

[0153] As a result, the amount of the first process gas re-adsorbed may decrease on product wafers 200a arranged in the first and third sections, while the amount of the first process gas re-adsorbed may increase on product wafers 200a arranged in the second section. This variation in the amount of the first process gas adsorbed after diffusion between product wafers 200a can cause differences in the throughput of product wafers 200a between sections. For example, in the aforementioned film formation process, differences in film formation rates may occur between sections. These issues are particularly pronounced when the surface area of ​​product wafers 200a arranged in the first region 201a is large.

[0154] In the present invention, as described above, the area of ​​the gas supply hole 250b per unit length in the direction perpendicular to the surface of the wafer 200 is larger in the portion facing the second section than in the portion facing the first section and the third section (see FIG. Figure 5 ). Thus, in step C, the inert gas can be supplied to the first section and the third section at a flow rate smaller than the flow rate of the inert gas supplied to the second section when the first processing gas is supplied in step B (see Figure 6 That is, in step C, the first process gas may be diluted with the inert gas so that the concentration of the first process gas supplied to the second section becomes lower than the concentration of the first process gas supplied to the first section and the third section.

[0155] By supplying the inert gas with the aforementioned flow rate distribution in step C, the amount of the first process gas adsorbed onto the product wafers 200a arranged in the second section in step B can be reduced compared to the amount of the first process gas adsorbed onto the product wafers 200a arranged in the first and third sections. This allows the amount of the first process gas re-adsorbed onto the product wafers 200a arranged in the second section to be closer to the amount of the first process gas re-adsorbed onto the product wafers 200a arranged in the first and third sections. This eliminates variations in the amount of the first process gas adsorbed between sections after diffusion of the first process gas. Consequently, the throughput of the product wafers 200a can be controlled to achieve a desired distribution, for example, uniformity, across the plurality of product wafers 200a.

[0156] (b) In step B, the first process gas is supplied from nozzle 249a, and in step C, the inert gas is supplied from nozzle 249b, which is different from nozzle 249a. This allows the first process gas and the inert gas for dilution to be ejected (supplied) from gas supply holes that are provided in different arrangements and shapes. Consequently, in step C, the inert gas for dilution can be supplied with a desired ejection pattern (flow rate distribution) without being affected by the ejection pattern (flow rate distribution) of the first process gas in step B.

[0157] In step C, by supplying the inert gas to at least the second section, the amount of the first process gas adsorbed onto the product wafer 200 a disposed in the second section in step B can be reliably reduced, thereby reliably achieving the above-mentioned effect.

[0158] (c) If step B is performed under low temperature conditions, for example, above room temperature (25°C) and below 200°C, the probability of physical adsorption of the first process gas to the chip 200 becomes higher than the probability of chemical adsorption. The first process gas physically adsorbed to the chip 200 is more likely to be released from the chip 200 than when chemically adsorbed. Therefore, if the first process gas is supplied under conditions where the probability of physical adsorption to the chip 200 is high, especially under conditions where physical adsorption is dominant, diffusion is likely to occur. That is, the influence of the diffusion of the first process gas in the above-mentioned film forming step is likely to become greater. As a result, after the first process gas diffuses, the amount of the first process gas adsorbed to the product chip 200a is likely to deviate between sections. When step B is performed under the above-mentioned low temperature conditions as in this method, the above-mentioned effect can be particularly significantly obtained.

[0159] (d) In step B, when a gas that is easily physically adsorbed on the surface of wafer 200 is used as the first process gas, it is more likely to be desorbed from wafer 200 after being adsorbed on the surface of wafer 200 than when a gas that is easily chemically adsorbed is used. As a result, after the first process gas diffuses, the amount of the first process gas adsorbed onto product wafer 200a is likely to vary between zones. When a gas that is easily physically adsorbed on the surface of wafer 200 is used as the first process gas in step B, as in this embodiment, the above-described effect can be particularly significantly achieved.

[0160] (e) By performing step B and step C simultaneously, the dilution inert gas can be supplied when the first process gas is supplied, thereby adjusting the amount of the first process gas adsorbed on the product wafer 200a (particularly the amount of physical adsorption).

[0161] (f) During the execution of step D, an inert gas is supplied from the inert gas nozzle (R2) to the second section at a flow rate smaller than the flow rate of the inert gas supplied from R2 to the second section during the execution of step B. Thus, when the second process gas is supplied, excessive dilution of the second process gas by the inert gas, which would otherwise reduce the concentration of the second process gas in the second section, can be suppressed.

[0162] (g) In step A, by placing the dummy wafer 200b having a relatively small surface area in the second region 201b, the concentration of the first process gas released from the product wafer 200a after the first process gas is supplied in step B is more likely to vary between the zones. This effect is particularly pronounced when the dummy wafer 200b is placed in the second region 201b in step A, as in this embodiment.

[0163] (h) In step A, no dummy wafer 200b is placed in first region 201a. That is, only product wafer 200a, which has a relatively large surface area, is placed in first region 201a. Consequently, after the first process gas is supplied in step B, the concentration of the first process gas released from product wafer 200a is likely to vary between zones. This effect is particularly pronounced when no dummy wafer 200b is placed in first region 201a in step A, as in this embodiment.

[0164] (i) In step C, the inert gas is supplied to the second region 201b at a flow rate smaller than the flow rate of the inert gas supplied to the second zone during the supply of the first process gas in step B. By supplying the inert gas from the nozzle 249b with such a flow rate distribution, it is possible to further reduce the variation in the concentration of the first process gas released from the product wafer 200a between zones.

[0165] (j) In step C, the inert gas is supplied to the second region 201b at a flow rate smaller than the flow rate of the inert gas supplied to the first and third zones during the supply of the first process gas in step B. By supplying the inert gas from the nozzle 249b with such a flow rate distribution, it is possible to further effectively reduce the concentration variation of the first process gas released from the product wafer 200a between the zones.

[0166] (k) In step B, the first processing gas (see Figure 6 ), thereby adjusting the partial pressure of the first process gas in the first and third sections so that the first process gas is reliably supplied to the first and third sections in step B. This ensures, for example, the film thickness of the product wafer 200a disposed in the first and third sections.

[0167] (1) By supplying the inert gas in step C, physical adsorption of the first process gas supplied in step B onto the surfaces of the plurality of product wafers 200 a can be reduced.

[0168] (m) By supplying the inert gas in step C, it is possible to purge the first process gas supplied in step B that has not been adsorbed onto the product wafers 200a but has accumulated in the spaces between the multiple product wafers 200a. Specifically, the inert gas supplied to the first through third sections in step C purges the spaces between the multiple product wafers 200a, thereby suppressing the re-adsorption of the first process gas that has been released from the surfaces of the product wafers 200a. Therefore, by supplying the inert gas in step C with the aforementioned flow rate distribution, it is sometimes possible to more effectively suppress the amount of the first process gas that is re-adsorbed onto the product wafers 200a after the first process gas is supplied in step B in the second section than in the first and third sections.

[0169] (n) By supplying the inert gas in step C, at least a portion of the first process gas supplied in step B and physically adsorbed on the plurality of product wafers 200a can be desorbed and exhausted from the processing chamber 201. Specifically, the inert gas supplied to the first through third sections in step C sometimes acts to purge the surfaces of the product wafers 200a, thereby physically desorbing the first process gas (particularly the physically adsorbed first process gas) adsorbed on the surfaces of the product wafers 200a from the surfaces of the product wafers 200a and exhausting it from the processing chamber 201 without being adsorbed. Therefore, by supplying the inert gas in step C with the aforementioned flow rate distribution, the amount of the first process gas adsorbed on the surfaces of the product wafers 200a and potentially diffusing can sometimes be more effectively reduced in the second section than in the first and third sections.

[0170] (4) Modification

[0171] (i) The nozzle 249b and the gas supply hole 250b in the above embodiment can be modified as shown in the following modifications. Only the elements different from the above embodiment will be described below.

[0172] (Variation 1)

[0173] In the above-mentioned embodiment, the case where the gas supply hole 250b is formed into a circular or elliptical shape is used as an example for explanation. However, in the present invention, the shape of the gas supply hole 250b is not particularly limited. Figure 7 As shown in (a) in FIG. 2 , it can also be formed in a slit shape. In this modified example, the slits are formed in such a manner that the width of the slits becomes the order of the second segment > the first segment and the third segment > the second region 201b. In addition, in the above-mentioned method, the case where a plurality of gas supply holes 250b are respectively provided in the first to third segments and each second region 201b is described as an example. However, in the present invention, the number of gas supply holes 250b in each segment, etc. is not particularly limited. For example, Figure 7 As shown in (a) of FIG. 1 , one gas supply hole 250b may be provided in each of the first to third sections and each second region 201b. The flow rate distribution of the inert gas ejected from the gas supply hole 250b in this modification is as follows: Figure 6 shown.

[0174] In this modification, the same effects as those of the above-described embodiment can be obtained.

[0175] (Variation 2)

[0176] In the above-mentioned embodiment, the case where a plurality of gas supply holes 250b are provided is described as an example. However, in the present invention, the number of gas supply holes 250b in the nozzle 249b is not particularly limited. Figure 7 As shown in (b) in FIG. 1 , a slit-shaped gas supply hole 250b may be provided from the upper portion to the lower portion of the nozzle 249b. In this modified example, the slit is formed in such a manner that the width of the slit gradually or stepwise decreases from the second section to the first section (or third section) and the second region 201b. The flow rate distribution of the inactive gas ejected from the gas supply hole 250b in this modified example is shown in FIG. Figure 6 shown.

[0177] In this modification, the same effects as those of the above-described embodiment can be obtained.

[0178] (Variation 3)

[0179] like Figure 7 As shown in (c) in FIG. 2 , the opening area of ​​the gas supply hole 250b per unit length in the direction perpendicular to the surface of the chip 200 may be larger in the portion opposite to the first section and the third section than in the portion opposite to the second region 201b. In this modified example, the opening area of ​​each gas supply hole 250b formed in the first section and the third section is substantially the same as the opening area of ​​each gas supply hole 250b formed in the second region 201b. The flow rate distribution of the inactive gas ejected from the gas supply hole 250b in this modified example is shown in FIG. Figure 8 As shown in (a) in .

[0180] In this modification, the same effects as those of the above-described embodiment can be obtained.

[0181] (Variation 4)

[0182] like Figure 7 As shown in (d) in FIG. 1 , the gas supply hole 250b may not be provided in the portion opposite to the second region 201b. That is, in step C, the supply of the inert gas from the gas supply hole 250b to the second region 201b may not be implemented. The flow rate distribution of the inert gas ejected from the gas supply hole 250b in this modification is shown in FIG. Figure 8 As shown in (b) in .

[0183] In this modification, the same effects as those of the above-described embodiment can be obtained.

[0184] (Variant 5)

[0185] like Figure 7 As shown in (e) in FIG. 1 , the gas supply hole 250b may not be provided in the portion opposite to the first and third sections. That is, in step C, the inert gas may be supplied to the second region 201b instead of the first and third sections. The flow rate distribution of the inert gas ejected from the gas supply hole 250b in this modification is shown in FIG. Figure 8 As shown in (c) in .

[0186] This variation also achieves the same effects as the above-described embodiment. Furthermore, in this variation, during the supply of the first process gas, by increasing the partial pressure of the inert gas in the second region 201b relative to the partial pressure of the inert gas in the first and third sections, the partial pressure of the first process gas in the first and third sections can sometimes be increased. This facilitates the adsorption of the first process gas onto the product wafers 200a disposed in the first and third sections, thereby reducing variations in the throughput compared to the product wafers 200a disposed in the second section.

[0187] (Variant 6)

[0188] like Figure 7 As shown in (f) in FIG. 1 , the gas supply hole 250b may not be provided in the portion facing the first and third sections and the second region 201b. That is, in step C, the supply of the inert gas to the first and third sections and the second region 201b may not be implemented. The flow rate distribution of the inert gas ejected from the gas supply hole 250b in this modified example is shown in FIG. Figure 8 As shown in (d) in .

[0189] This variation also achieves the same effects as the above-described embodiment. Furthermore, in this variation, during the supply of the first process gas, a large amount of the first process gas can be adsorbed onto the product wafer 200a arranged in the first and third sections and the dummy wafer 200b arranged in the second region 201b. This further increases the first process gas concentration in the first and third sections during diffusion. Consequently, the effect of reducing uneven first process gas concentration between sections can be further enhanced.

[0190] (Variant 7)

[0191] like Figure 7 (g) or Figure 7As shown in (h) in FIG. 2 , a plurality of nozzles 249b may be provided. In this modified example, at least one of the plurality of nozzles 249b has a gas supply hole 250b provided only in a portion facing the second section, and another of the plurality of nozzles 249b has a gas supply hole 250b provided in a portion facing the first section and the third section. Figure 7 In the modification shown in (g), three nozzles 249b are provided, and the first one has a gas supply hole 250b provided only in the portion facing the second section, the second one has a gas supply hole 250b provided only in the portion facing the first and third sections, and the third one has a gas supply hole 250b provided only in the portion facing the second region 201b. Figure 7 In the modified example shown in (h), three nozzles 249b are provided. The first nozzle has gas supply holes 250b provided only in the portion facing the second segment. The second nozzle has gas supply holes 250b provided only in the portion facing each of the first to third segments. The third nozzle has gas supply holes 250b provided in the portion facing each of the first to third segments and the second region 201b. In these modified examples, for example, the opening areas of the gas supply holes 250b may be equal, and the gas supply holes 250b may be arranged at equal intervals.

[0192] The flow rate distribution of the inert gas ejected from the gas supply holes 250b in this modification can be controlled by adjusting the supply flow rate of each nozzle 249b. Figure 7 In the modification shown in (g), by adjusting the supply flow rate in each nozzle 249b, the flow rate distribution of the inert gas ejected from the gas supply hole 250b can be made Figure 6 、 Figure 8 In the embodiment shown in any one of (a) to (e). In addition, for example, according to Figure 7 In the modification shown in (h), by adjusting the supply flow rate in each nozzle 249b, the flow rate distribution of the inert gas ejected from the gas supply hole 250b can be made Figure 6 、 Figure 8 (b) Figure 8 The method shown in any one of (d).

[0193] In this modification, the same effects as those of the above-described method can be obtained. In this modification, by further providing a plurality of nozzles 249b, the flow rate of the inert gas supplied to the second section and the flow rate of the inert gas supplied to the first section and the third section can be easily controlled in step C.

[0194] (ii) The processing sequence in the above-mentioned embodiment can be modified as shown in the following modifications. These modifications can be combined arbitrarily. Unless otherwise specified, the processing steps and processing conditions in each step of each modification can be the same as the processing steps and processing conditions in each step of the above-mentioned processing sequence.

[0195] (Variation 8)

[0196] In step C, after stopping the supply of the first process gas in step B, the supply of the inert gas may be stopped.

[0197] This variation also achieves the same effects as the above-described embodiment. It also allows for more efficient regulation of the amount of the first process gas adsorbed onto the product wafers 200a arranged in the first to third sections. In particular, after the supply of the first process gas is stopped, the amount of the first process gas re-adsorbed onto the product wafers 200a can be further regulated.

[0198] (Variant 9)

[0199] Step C may also be performed after step B but not simultaneously with step B.

[0200] This modification also achieves at least some of the advantages of the above-described method. Furthermore, after the first process gas is supplied, the first process gas physically adsorbed on the product wafer 200 a is purged (removed), thereby adjusting the amount of the first process gas adsorbed on the product wafer 200 a.

[0201] (Variation 10)

[0202] During the execution of step D, the dilution inert gas may also be supplied to the second section, and the dilution inert gas may be supplied to at least either the first section or the third section at a flow rate greater than the flow rate of the dilution inert gas supplied to the second section (the same flow rate or a flow rate greater than the flow rate of the dilution inert gas supplied to the second section).

[0203] In this modification, the same effects as those of the above-described embodiment can be obtained.

[0204] The second process gas (raw material gas) supplied in step D sometimes has a relatively high concentration in the first section and the third section, and a relatively low concentration in the second section. This is because, in the second region 201b where the dummy chip 200b with a small surface area is arranged, the consumption (adsorption) of the second process gas per unit volume is relatively small, so the unconsumed second process gas sometimes moves (spreads) to the adjacent first section and third section. In this modification, the concentration of the second process gas in each section is made nearly uniform by supplying the dilution inert gas in a manner that achieves the above-mentioned flow distribution when the second process gas is supplied. It should be noted that, with respect to the supply of the dilution inert gas in this modification, as shown in FIG. Figure 7 As shown in (g) in FIG. 1 , this can be particularly preferably implemented when a plurality of nozzles 249 b ( R2 ) are provided and the flow rate distribution of the dilution inert gas is configured to be able to be changed in steps.

[0205] It should be noted that, similar to the supply of the first process gas in step B, when the second process gas is supplied in step D, the diffusion of physically adsorbed gas may cause a deviation in gas concentration between the segments and / or between the first and second regions. In this case, in step D, the flow rate distribution of the dilution inert gas supplied to each of the first to third segments and / or to each of the first and second regions may be controlled in the same manner as in step C.

[0206] (Variation 11)

[0207] The following steps can also be performed as shown in the following processing sequence:

[0208] Step A: arranging a plurality of product wafers 200a having concave structures formed on their surfaces in multiple layers in a direction perpendicular to the surface in a first region 201a, and arranging dummy wafers 200b in a second region 201b;

[0209] step B of supplying a first process gas to at least a portion of the first region 201a; and

[0210] Step C of supplying an inert gas at a first flow rate to at least a portion of the first region 201a and supplying an inert gas at a flow rate smaller than the flow rate of the inert gas supplied to the first region 201a to the second region 201b.

[0211] In step B of this variation, the first process gas is preferably supplied from nozzle 249a (R1). In step C of this variation, an inert gas is preferably supplied from one or more nozzles 249b (R2) to the first region 201a and the second region 201b. In step C of this variation, the inert gas is preferably supplied from one or more nozzles R2 at a first flow rate to at least a portion of the first region 201a, and the inert gas is preferably supplied from one or more nozzles R2 at a second flow rate that is lower than the first flow rate to the second region 201b.

[0212] In step C of this modification, the nozzle 249b (see Figure 5 ),exist Figure 7 (a)~ Figure 7 This is performed using the nozzle 249b illustrated in (i). Figure 7 The nozzle 249b shown in (i) is configured such that the opening area of ​​the gas supply hole 250b per unit length in the direction perpendicular to the surface of the wafer 200 becomes smaller in the portion facing the second region 201b than in the portion facing the first region 201a. In addition, step C in this modification can particularly preferably use the nozzle 249b as exemplified in the above-mentioned method (see Figure 5 ),exist Figure 7 (a)~ Figure 7 (c) Figure 7 (e) in Figure 7 (g)~ Figure 7 The nozzle 249b shown in (i) is provided with a gas supply hole 250b in the portion facing the second region 201b. By using a nozzle provided with a gas supply hole 250b in the portion facing the second region 201b, it is easy to supply the dilution inert gas to the second region 201b and adjust the concentration distribution (partial pressure distribution) of the first processing gas. In addition, in this modification, as shown in FIG. Figure 7 As shown in (i) in FIG. 1 , the opening area of ​​the gas supply hole 250b per unit length in the direction perpendicular to the surface of the wafer 200 may not be larger in the portion facing the second section than in the portion facing the first section and the third section. Figure 7 The flow rate distribution of the inert gas ejected from the gas supply hole 250b shown in (i) is as follows: Figure 8 As shown in (e) in .

[0213] In this modification, at least part of the same effects as those of the above-described embodiment can be obtained.

[0214] <Other aspects of the present invention>

[0215] The embodiments of the present invention have been specifically described above. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the present invention.

[0216] In the above-described method, as the second process gas, a raw material gas containing Si as a predetermined element is used as an example. However, the present invention is not limited to this. For example, the present invention can also be applied when an oxide film containing a metal element such as aluminum (Al), titanium (Ti), hafnium (Hf), zirconium (Zr), tantalum (Ta), molybdenum (Mo), or tungsten (W) is formed on the wafer 200 in the above-described process sequence using a second process gas containing a metal element such as aluminum (Al), titanium (TiO), hafnium (HfO), zirconium (ZrO), tantalum (TaO), molybdenum (MoO), or tungsten (WO). Furthermore, the present invention can also be applied to the case where a nitride film or carbide film containing a metal element, such as an aluminum nitride film (AlN film), a titanium nitride film (TiN film), a hafnium nitride film (HfN film), a zirconium nitride film (ZrN film), a tantalum nitride film (TaN film), a molybdenum nitride film (MoN film), a tungsten nitride film (WN film), a titanium oxynitride film (TiON film), a titanium aluminum carbonitride film (TiAlCN film), a titanium aluminum carbide film (TiAlC film), or a titanium carbonitride film (TiCN film), is formed on the wafer 200 in the above-described process sequence using a first process gas containing at least one of nitrogen (N) or carbon (C) and a second process gas containing the above-described metal element. In this embodiment, the same effects as those of the above-described embodiment can be obtained.

[0217] In the above embodiment, the case where the inert gas is supplied to both the first and third sections in step C is described as an example. However, the present invention is not limited to this. For example, the inert gas may be supplied to either the first or third section. This embodiment also achieves the same effects as the above embodiment.

[0218] In the above method, step A is described using the example of placing dummy wafer 200b in second area 201b. However, the present invention is not limited to this. For example, a wafer may not be placed in second area 201b. Alternatively, second area 201b may be a space without a wafer. This method also achieves the same effects as the above method.

[0219] In the above-described method, step A describes the arrangement of dummy wafers 200b in the second region 201b as an example. However, the present invention is not limited to this arrangement. For example, the arrangement interval (pitch) between product wafers 200a arranged in the second region 201b may be wider than the arrangement interval between product wafers 200a arranged in the first region 201a. In other words, the surface area per unit volume of the wafers in the second region 201b may be smaller than the surface area per unit volume of the wafers in the first region 201a. This method also achieves the same effects as the above-described method.

[0220] The above method uses a dummy wafer 200b as the second substrate. However, the present invention is not limited to this. For example, a monitor wafer with a smaller surface area than the product wafer 200a can also be used as the second substrate. This method also achieves the same effects as the above method.

[0221] In the above-described method, film formation is used as an example of substrate processing. However, the present invention is not limited to this. For example, etching can also be performed using an etching gas as the second process gas. This method can also achieve the same effects as the above-described method.

[0222] The above method describes the case where steps B and C are performed simultaneously (where the execution period of step B coincides with and overlaps with the execution period of step C). However, the present invention is not limited to this. For example, step C may be started after a predetermined time has elapsed after step B begins and before step B ends. In this case, at least a portion of the execution period of step B and the execution period of step C (the supply period of the first process gas and the supply period of the dilution inert gas) overlap. This method also achieves the same effects as the above method.

[0223] Recipes for each process are preferably prepared separately based on the process content and pre-recorded and stored in the storage device 121c via a communication line or an external storage device 123. Furthermore, when each process is started, the CPU 121a preferably selects an appropriate recipe from the multiple recipes recorded and stored in the storage device 121c based on the process content. These recipes are not limited to newly generated recipes; for example, they can be prepared by modifying existing recipes already installed in the substrate processing apparatus.

[0224] The above-described method describes an example of film formation using a substrate processing apparatus with a hot-wall processing furnace. The present invention is not limited to the above-described method and can also be appropriately applied to film formation using a substrate processing apparatus with a cold-wall processing furnace. Furthermore, the above-described method describes an example of gas activation using heat. However, the present invention is not limited to this. For example, gas activation using plasma generated inside or outside the processing chamber 201 or gas activation using electromagnetic waves irradiated by a lamp or the like can also be appropriately applied.

[0225] When these substrate processing apparatuses are used, each process can be performed using the same processing steps and processing conditions as those in the above-mentioned embodiment and modification examples, and the same effects as those in the above-mentioned embodiment and modification examples can be obtained.

[0226] The above-mentioned embodiments and modifications can be used in combination as appropriate. The processing steps and processing conditions in this case can be, for example, the same as those in the above-mentioned embodiments or modifications.

Claims

1. A substrate processing method comprising: (a) a step of arranging a plurality of first substrates having concave structures formed on their surfaces in a multilayer manner in a direction perpendicular to the surface within the first region; (b) supplying a first process gas to at least a portion of the first region; and (c) supplying an inert gas different from the first process gas to at least a portion of the first region, The first area includes: a first section including one end of the first region; a third section including the other end of the first region; and a second section located between the first section and the third section, In (c), the inert gas is supplied to the second section, and the inert gas is supplied to at least either the first section or the third section at a flow rate smaller than the flow rate of the inert gas supplied to the second section; or, the inert gas is supplied to the second section, and the inert gas is not supplied to the first section and the third section.

2. The substrate processing method according to claim 1, wherein: In (b), the first processing gas is supplied from the first nozzle, In (c), the inert gas is supplied to at least the second section from one or more second nozzles different from the first nozzle.

3. The substrate processing method according to claim 1, further comprising: (d) supplying a second processing gas containing a predetermined element and different from the first processing gas to the first region; By performing (b), (c), and (d) a predetermined number of times, films containing the predetermined element are formed on the plurality of first substrates.

4. The substrate processing method according to claim 3, wherein: In (c), the inert gas is supplied from an inert gas nozzle different from a first process gas nozzle for supplying the first process gas and a second process gas nozzle for supplying the second process gas.

5. The substrate processing method according to claim 1, wherein: (c) is performed in a manner that repeats (b) for at least a portion of the execution period.

6. The substrate processing method according to claim 4, wherein: (c) is repeated with (b) for at least part of the execution period, During the execution period of (d), the inert gas is supplied from the inert gas nozzle to the second section at a flow rate smaller than the flow rate of the inert gas supplied from the inert gas nozzle to the second section during the execution period of (b).

7. The substrate processing method according to any one of claims 1 to 6, wherein: (a) further includes the step of disposing a second substrate having a smaller surface area than the first substrate in a second region different from the first region.

8. The substrate processing method according to claim 7, wherein: In (a), the second substrate is not arranged in the first region.

9. The substrate processing method according to claim 7, wherein: In (c), the inert gas is supplied to the second region at a flow rate smaller than the flow rate of the inert gas supplied to the second section, or the inert gas is not supplied to the second region.

10. The substrate processing method according to claim 7, wherein: In (c), the inert gas is supplied to the second region at a flow rate smaller than the flow rate of the inert gas supplied to at least either the first section or the third section, or the inert gas is not supplied to the second region.

11. The substrate processing method according to claim 7, wherein: In (c), the inert gas is not supplied to the first section and the third section, and the inert gas is supplied to the second region.

12. The substrate processing method according to claim 7, wherein: In (c), the inert gas is not supplied to the first section, the third section, and the second region.

13. The substrate processing method according to claim 7, wherein: In (b), the first process gas is supplied to at least a portion of the second region.

14. The substrate processing method according to any one of claims 1 to 6, wherein: In (c), the inert gas is supplied so as to suppress physical adsorption of the first process gas onto the surfaces of the plurality of first substrates.

15. The substrate processing method according to any one of claims 1 to 6, wherein: In (b), the temperature of the plurality of first substrates is set to be not less than room temperature and not more than 200° C.

16. The substrate processing method according to any one of claims 1 to 6, wherein: The first processing gas is a gas containing oxygen.

17. The substrate processing method according to any one of claims 1 to 6, wherein: The first processing gas is a gas containing oxygen and hydrogen in one molecule.

18. A method for manufacturing a semiconductor device, comprising: (a) a step of arranging a plurality of first substrates having concave structures formed on their surfaces in a multilayer manner in a direction perpendicular to the surface within the first region; (b) supplying a first process gas to at least a portion of the first region; and (c) supplying an inert gas different from the first process gas to at least a portion of the first region, The first area includes: a first section including one end of the first region; a third section including the other end of the first region; and a second section located between the first section and the third section, In (c), the inert gas is supplied to the second section, and the inert gas is supplied to at least either the first section or the third section at a flow rate smaller than the flow rate of the inert gas supplied to the second section; or, the inert gas is supplied to the second section, and the inert gas is not supplied to the first section and the third section.

19. A computer-readable recording medium having a program recorded thereon for causing a substrate processing apparatus to execute the following steps via a computer, the steps comprising: (a) a step of arranging a plurality of first substrates having concave structures formed on their surfaces in a multilayer manner in a direction perpendicular to the surface in the first region; (b) supplying a first processing gas to at least a portion of the first region; (c) supplying an inert gas different from the first process gas to at least a portion of the first region, The first region includes: a first section including one end of the first region; a third section including the other end of the first region; and a second section located between the first section and the third section. In (c), the inert gas is supplied to the second section, and the inert gas is supplied to at least either the first section or the third section at a flow rate smaller than the flow rate of the inert gas supplied to the second section; or, the inert gas is supplied to the second section, and the inert gas is not supplied to the first section and the third section.

20. A substrate processing apparatus comprising: a substrate holder for holding a plurality of first substrates having concave structures formed on their surfaces in a multi-layer manner in a direction perpendicular to the surface in the first region; a first process gas supply unit configured to supply a first process gas to at least a portion of the first region; an inert gas supply unit configured to supply an inert gas different from the first process gas to at least a portion of the first region; and a control unit configured to control the first process gas supply unit and the inert gas supply unit so as to perform: (b) a process of supplying the first process gas to at least a portion of the first region; and (c) supplying the inert gas different from the first process gas to at least a portion of the first region, The first region includes: a first section including one end of the first region; a third section including the other end of the first region; and a second section located between the first section and the third section. The control unit is configured to control the inert gas supply unit so that: in (c), the inert gas is supplied to the second section, and the inert gas is supplied to at least either the first section or the third section at a flow rate smaller than the flow rate of the inert gas supplied to the second section; or, the inert gas is supplied to the second section, and the inert gas is not supplied to the first section and the third section.

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