Annealing furnace equipment and annealing control method thereof

Abstract

The invention discloses annealing furnace equipment and an annealing control method thereof. The annealing furnace equipment comprises an annealing furnace with a cylindrical structure, the first furnace door and the second furnace door are respectively arranged at two ends of the annealing furnace; the first furnace door is connected with a bearing bracket which can be inserted into the annealing furnace; the bearing bracket is of a strip-shaped plate structure and is used for bearing a semiconductor device to be processed; a heat insulation plate is detachably arranged at the end, connected with the first furnace door, of the bearing support. The shape of the heat insulation plate is the same as that of the cross section of the annealing furnace; a through hole structure which is the same as the cross section of the bearing bracket in shape is arranged in the central area of the heat insulation plate, and the end part of the bearing bracket penetrates through the through hole structure. According to the annealing furnace equipment, the detachable heat insulation plates are arranged at the end, connected with the first furnace door, of the bearing support in the penetrating mode, low-cost flexible control over the temperature field of the annealing furnace equipment is achieved, the requirements of heat treatment of different semiconductor devices for the temperature field are met, and wide application of the annealing furnace equipment is facilitated.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor heat treatment equipment, and in particular to an annealing furnace equipment and an annealing control method for the annealing furnace equipment. Background Art

[0002] Annealing furnace is a kind of high temperature processing equipment that is frequently used in semiconductor processing. Based on the different types of semiconductor products that need to be processed by the annealing furnace, the structure and shape of the annealing furnace are also varied. Figure 1 As shown, Figure 1 The cylindrical tubular annealing furnace shown in the figure has closable furnace doors at both ends. The bracket for carrying semiconductor products in the annealing furnace is connected to one of the furnace doors and can be pushed into or pulled out of the annealing furnace as the furnace door is pulled. The annealing furnace is also equipped with heating resistance wires and temperature measuring thermistors and other components.

[0003] right Figure 1 In the cylindrical tubular annealing furnace shown, the heat dissipation rate is faster at the two end doors than in the middle section of the annealing furnace. Generally, the temperature field within the annealing furnace is roughly divided into a relatively high constant temperature zone in the middle section and a cooling zone with a decreasing temperature trend at the two end sections. The temperature field distribution requirements within the annealing furnace vary depending on the type of semiconductor product being processed and annealed in the annealing furnace. Currently, the temperature field distribution in annealing furnaces can only be adjusted by adjusting the heating power of the heating wire. This single method of temperature regulation is costly to implement and lacks flexibility. Summary of the Invention

[0004] The object of the present invention is to provide an annealing furnace device and an annealing control method thereof, which can realize flexible adjustment of the temperature in the annealing furnace at low cost.

[0005] In order to solve the above technical problems, the present invention provides an annealing furnace device, comprising an annealing furnace with a cylindrical structure; a first furnace door and a second furnace door respectively provided at both ends of the annealing furnace;

[0006] Wherein, the first furnace door is connected to a supporting bracket which can be inserted into the annealing furnace; the supporting bracket is a strip plate structure for supporting the semiconductor device to be processed;

[0007] A heat insulation board is detachably provided on the end of the supporting bracket that is interconnected with the first furnace door; the shape of the heat insulation board is the same as the cross-sectional shape of the annealing furnace; and a through-hole structure with the same cross-sectional shape as the supporting bracket is provided in the central area of ​​the heat insulation board, and the end of the supporting bracket passes through the through-hole structure.

[0008] In an optional embodiment of the present application, the thermal insulation board includes two thermal insulation splicing boards; the two thermal insulation splicing boards are spliced ​​together to form the thermal insulation board;

[0009] The two thermal insulation splicing plates both have a groove structure; when the two thermal insulation splicing plates are spliced ​​together to form the thermal insulation board, the through-hole structure is formed between the two groove structures.

[0010] In an optional embodiment of the present application, the parts where the two thermal insulation splicing panels are spliced ​​and bonded to each other are concave-convex structures that can be interpenetrated with each other;

[0011] And / or, the locations where the two thermal insulation splicing panels are spliced ​​and bonded to each other are provided with magnetic attracting parts that can attract each other.

[0012] In an optional embodiment of the present application, the thermal insulation board is a nanoporous thermal insulation board or a zirconia ceramic board.

[0013] In an optional embodiment of the present application, the second furnace door is a columnar platform that can be inserted into the end of the annealing furnace;

[0014] A plurality of heat-insulating blocks are detachably provided on the end surface of the second furnace door facing away from the annealing furnace.

[0015] In an optional embodiment of the present application, a plurality of blind holes are provided on an end surface of the second furnace door facing away from the annealing furnace;

[0016] The heat-insulating blocks are pluggable and inserted into the blind holes.

[0017] In an optional embodiment of the present application, the insulation block is an insulation rod comprising a first segment rod and a second segment rod; the diameter of the first segment rod is greater than the diameter of the second segment rod; the diameter of the blind hole is the same as the diameter of the second segment rod; and the depth of the blind hole is equal to the length of the second segment rod.

[0018] In an optional embodiment of the present application, a plurality of concentrically arranged annular grooves are provided on an end surface of the second furnace door facing away from the annealing furnace;

[0019] The heat-insulating block is an annular heat-insulating ring for being clamped into each of the annular grooves.

[0020] In an optional embodiment of the present application, the second furnace door and the insulation block are both made of zirconia ceramic structures.

[0021] In an optional embodiment of the present application, at least three annular thermal insulation rings are detachably connected to the outer surface of the annealing furnace; one of the three annular thermal insulation rings is provided in each of the middle section and the two sections of the annealing furnace.

[0022] An annealing control method for an annealing furnace device, applied to the annealing furnace device described in any one of the above items, the annealing control method comprising:

[0023] Determining temperature parameters of a middle region and two end regions of an annealing furnace in an annealing furnace device according to the device type of the semiconductor device to be processed;

[0024] The annealing tube is supported and placed in the annealing furnace by a supporting bracket; wherein the semiconductor device to be processed is placed in the annealing tube;

[0025] A corresponding number of heat insulation boards are arranged on the supporting bracket according to the temperature parameters.

[0026] In an optional embodiment of the present application, the semiconductor device to be processed is a mercury cadmium telluride wafer disposed in the middle section of the annealing tube; a mercury source is disposed at an end of the annealing tube away from the sealing interface;

[0027] The method of supporting and arranging the annealing tube in the annealing furnace by a supporting bracket includes:

[0028] Placing the annealing tube on a supporting bracket, pushing the supporting bracket into the furnace of the annealing furnace until the mercury cadmium telluride wafer enters the furnace of the annealing furnace and the mercury source does not enter the furnace of the annealing furnace, and keeping it for 1 minute to 5 minutes, then completely pushing the supporting bracket into the annealing furnace;

[0029] After arranging a corresponding number of heat insulation boards on the supporting bracket according to the temperature parameters, the method further includes:

[0030] The supporting bracket is pulled out of the annealing furnace until the mercury cadmium telluride wafer is located in the furnace of the annealing furnace and the mercury source is located outside the furnace of the annealing furnace, and maintained for 1 minute to 5 minutes, and then the supporting bracket is completely pulled out of the annealing furnace.

[0031] The present invention provides an annealing furnace device and an annealing control method for the annealing furnace device, wherein the annealing furnace device includes an annealing furnace with a tubular structure; a first furnace door and a second furnace door are respectively arranged at both ends of the annealing furnace; wherein the first furnace door is connected to a supporting bracket that can be inserted into the annealing furnace; the supporting bracket is a strip plate structure for supporting semiconductor devices to be processed; the end of the supporting bracket that is interconnected with the first furnace door is detachably provided with a heat insulation plate; the shape of the heat insulation plate is the same as the cross-sectional shape of the annealing furnace; and the central area of ​​the heat insulation plate is provided with a through-hole structure with the same cross-sectional shape as the supporting bracket, and the end of the supporting bracket passes through the through-hole structure.

[0032] In the annealing furnace equipment in the present application, a plurality of detachable heat insulation panels are interspersed at the end where the supporting bracket is connected to the first furnace door; the first furnace door connected to the supporting bracket is the furnace door that is opened more frequently on the annealing furnace, so the temperature drop gradient in the end area close to the first furnace door in the annealing furnace is larger. In order to be able to more flexibly adjust the temperature field changes in the end interval close to the first furnace door in the annealing furnace in the present application, a heat insulation panel is detachably provided on the end of the supporting bracket close to the first furnace door. Based on the different number of heat insulation panels, the temperature field in the end area close to the first furnace door in the annealing furnace can be flexibly adjusted to change according to different gradients, thereby meeting the requirements of different semiconductor device processing for the temperature field in the annealing furnace, realizing low-cost and flexible control of the temperature field of the annealing furnace equipment, and facilitating the wide application of the annealing furnace equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0034] Figure 1 It is a structural schematic diagram of an existing annealing furnace;

[0035] Figure 2 A schematic diagram of the structure of the annealing furnace equipment provided in an embodiment of the present application;

[0036] Figure 3 A schematic diagram of the structure of a support supporting a mercury cadmium telluride wafer provided in an embodiment of the present application;

[0037] Figure 4 A schematic structural diagram of a heat insulation board provided in an embodiment of the present application;

[0038] Figure 5 A schematic structural diagram of a heat-insulating splicing plate provided in an embodiment of the present application;

[0039] Figure 6 A schematic diagram of the structure of the second furnace door and the insulation rod connected to each other provided in an embodiment of the present application;

[0040] Figure 7 A schematic structural diagram of a second furnace door provided in an embodiment of the present application;

[0041] Figure 8 A schematic diagram of the structure of the heat preservation rod provided in an embodiment of the present application;

[0042] Figure 9 A schematic flow chart of an annealing control method for an annealing furnace device provided in an embodiment of the present application;

[0043] In the accompanying drawings: 1 is an annealing furnace, 11 is a first furnace door, 12 is a second furnace door, 121 is an insulation block, 122 is a blind hole, 1221 is a first section rod, 1222 is a second section rod, 2 is a supporting bracket, 3 is a heat insulation board, 31 is a through-hole structure, 32 is a heat insulation splicing board, 321 is a groove structure, 322 is a convex strip, 323 is a groove, 324 is a magnetic part, 4 is an annular heat insulation ring, 5 is an annealing quartz tube, 51 is a mercury source, and 52 is a mercury cadmium telluride wafer. DETAILED DESCRIPTION

[0044] In the technology of temperature control in the annealing furnace, the heating power of the heating device in the annealing furnace is often regulated based on the temperature data collected and measured by thermistors distributed in the annealing furnace. This temperature control method requires more complex temperature control calculations and is more expensive, which to a certain extent increases the cost of annealing processing of semiconductor devices.

[0045] To this end, the present application provides an annealing furnace device that can reduce the cost of temperature control in the annealing furnace while meeting the temperature requirements of different types of semiconductor devices.

[0046] In order to enable those skilled in the art to better understand the present invention, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0047] like Figure 2 and Figure 3 As shown, Figure 2 A schematic diagram of the structure of the annealing furnace equipment provided in an embodiment of the present application; Figure 3 A schematic diagram of the structure of a support supporting a mercury cadmium telluride wafer provided in an embodiment of the present application.

[0048] In a specific embodiment of the present application, the annealing furnace equipment may include:

[0049] An annealing furnace 1 having a cylindrical structure; a first furnace door 11 and a second furnace door 12 respectively provided at both ends of the annealing furnace 1;

[0050] The first furnace door 11 is connected to a supporting bracket 2 that can be inserted into the annealing furnace 1; the supporting bracket 2 is a strip plate structure for supporting semiconductor devices to be processed;

[0051] A heat insulation board 3 is detachably provided on the end of the supporting bracket 2 that is interconnected with the first furnace door 11; the shape of the heat insulation board 3 is the same as the cross-sectional shape of the annealing furnace 1; and a through-hole structure 31 with the same cross-sectional shape as the supporting bracket 2 is provided in the central area of ​​the heat insulation board 3, and the end of the supporting bracket 2 passes through the through-hole structure 31.

[0052] like Figure 2 As shown, in the annealing furnace equipment of this embodiment, the first furnace door 11 and the end of the supporting bracket 2 are fixedly connected, and a slide rail is generally provided on the outside of the annealing furnace 1. The first furnace door 11 can drive the supporting bracket 2 to move on the slide rail, thereby driving the supporting bracket 2 to be inserted into the annealing furnace 1 or removed from the annealing furnace 1; that is, the first furnace door 11 is the furnace door on the annealing furnace 1 that needs to be opened and closed more frequently; accordingly, the temperature in the section of the annealing furnace 1 close to the first furnace door 11 is lower than the temperature in the middle section of the annealing furnace 1.

[0053] In actual applications, when the semiconductor device to be processed is annealed in the annealing furnace 1, it is required that the entire annealing furnace 1, including the two end sections, are approximately constant temperature sections. At this time, multiple heat insulation plates 3 can be set at the ends of the supporting bracket 2. By utilizing the common heat insulation effect between the heat insulation plates 3 and the first furnace door 11, the temperature drop of the section near the first furnace door 11 in the annealing furnace 1 can be reduced to a certain extent, thereby reducing the temperature difference between the section near the first furnace door 11 and the middle section in the annealing furnace 1, thereby meeting the annealing processing requirements of the semiconductor device to be processed.

[0054] Of course, in practical applications, different types of semiconductor devices to be processed have different requirements for the annealing temperature field distribution in the annealing furnace 1 .

[0055] like Figure 3 As shown, in Figure 3 The semiconductor device to be processed is a mercury cadmium telluride wafer 52, used in infrared detection chips, placed within an annealing quartz tube 5. A mercury source 51 is located at the end of the annealing quartz tube 5. The mercury cadmium telluride wafer 52 is annealed in a mercury vapor atmosphere. During this annealing process, the temperature at the end of the mercury source 51 must be lower than the temperature of the area surrounding the mercury cadmium telluride wafer 52 to prevent mercury vapor from condensing on the surface of the mercury cadmium telluride wafer 52 and corroding it. However, the temperature at the end of the mercury source 51 must not be too low to ensure sufficient mercury vapor within the annealing quartz tube 5. Therefore, during this annealing process, a few heat insulation plates 3 can be installed at the end of the supporting frame 2 to reduce the heat dissipation at the first furnace door 11, thereby ensuring that the temperature at the end of the mercury source 51 in the annealing quartz tube 5 is not too low, while ensuring that there is a certain temperature difference between the section where the mercury cadmium telluride wafer 52 is located and the temperature at the end of the mercury source 51, thereby ensuring the annealing effect of the mercury cadmium telluride wafer 52.

[0056] Based on the above discussion, in the present application, a heat insulation plate 3 is detachably provided at the end where the supporting bracket 2 and the first furnace door 11 are connected. Therefore, in the actual process of heat treatment of different semiconductor devices to be processed, the number of heat insulation plates 3 can be flexibly adjusted based on the heat treatment temperature requirements of different types of semiconductor devices to be processed, thereby realizing flexible adjustment of the temperature field in the annealing furnace 1. The adjustment method is simple and the implementation cost is low, which is conducive to the widespread application of annealing furnace equipment in the heat treatment processing of various different semiconductor devices.

[0057] Based on the above embodiments, Figure 4 and Figure 5 As shown, in an optional embodiment of the present application, the heat insulation board 3 may further include:

[0058] Two heat-insulating splicing panels 32; two heat-insulating splicing panels 32 are spliced ​​together to form a heat-insulating panel 3;

[0059] The two heat-insulating splicing plates 32 each have a groove structure 321 . When the two heat-insulating splicing plates 32 are spliced ​​together to form the heat-insulating plate 3 , a through-hole structure 31 is formed between the two groove structures 321 .

[0060] Reference Figure 4 and Figure 5 In this embodiment, the heat insulation board 3 is divided into two heat insulation splicing boards 32, and the dividing line between the two heat insulation splicing boards 32 passes through the through-hole structure 31, dividing the through-hole structure 31 into two groove structures 321. As a result, the two heat insulation splicing boards 32 can be arranged on the supporting bracket 2 by splicing each other, so that the supporting bracket 2 passes through the through-hole structure 31 formed by the splicing of the two groove structures 321, so that the heat insulation board 3 formed by the two heat insulation splicing boards 32 is fixed to the end of the supporting bracket 2; similarly, the heat insulation board 3 set on the supporting bracket 2 can also be removed from the supporting bracket 2 by splitting the two heat insulation splicing boards 32 from each other. It can be seen that in this embodiment, by dividing the heat insulation board 3 into two detachable heat insulation splicing boards 32, the heat insulation board 3 can be more conveniently installed on the supporting bracket 2 and can also be conveniently removed from the supporting bracket 2.

[0061] In actual application, the through hole structure 31 on the insulation board 3 is roughly a narrow rectangular through hole, and the dividing line between the two insulation splicing boards 32 can be roughly perpendicular to the long side length of the rectangular through hole structure 31, so that a single insulation splicing board 32 can also be clamped on the supporting bracket 2 through the groove structure 321.

[0062] In addition, in order to improve the tightness of the splicing connection between the two thermal insulation splicing panels 32, in another optional implementation of this embodiment, the two thermal insulation splicing panels 32 may further include:

[0063] The parts where the two heat-insulating splicing plates 32 are spliced ​​and fitted together are concave-convex structures that can be interpenetrated with each other;

[0064] And / or, the locations where the two heat insulation splicing plates 32 are spliced ​​and bonded to each other are provided with magnetic attracting parts 324 that can attract each other.

[0065] In order to improve the tightness of the connection between the two insulation splicing plates 32 after they are spliced ​​together in this embodiment, the surfaces of the two insulation splicing plates 32 that are bonded to each other are set to have a concave-convex structure that can be interlaced with each other, such as Figure 4 and Figure 5 As shown, a ridge 322 extending outward with a certain length is provided on the splicing surface of one thermal insulation splicing plate 32, and correspondingly, a matching groove 323 is provided at the corresponding position on the other thermal insulation splicing plate 32; thereby, the ridge on one thermal insulation splicing plate 32 can be inserted into the groove on the other thermal insulation splicing plate 32, and each thermal insulation splicing plate 32 has both a ridge 322 and a corresponding groove 323, and the length of the ridge 322 and the depth of the groove 323 are relatively large, thereby ensuring that the two thermal insulation splicing plates 32 can be deeply interlaced, thereby enabling the two thermal insulation splicing plates 32 to be tightly spliced ​​and connected.

[0066] On this basis, in addition to utilizing the concave-convex structure formed by the grooves 323 and the ridges 322 to achieve the splicing connection between the two thermal insulation splicing panels 32, in this embodiment, magnetic suction parts 324 can also be respectively provided on the splicing surfaces between the two thermal insulation splicing panels 32. Specifically, magnetic suction sheets can be provided. Obviously, the magnetic properties of the magnetic suction parts 324 respectively provided on the two thermal insulation splicing panels 32 should be opposite, so that the two thermal insulation splicing panels 32 can be fastened and spliced ​​through the mutual adsorption force of the magnetic parts 324.

[0067] Of course, in actual applications, in order to better ensure the tightness of the splicing connection between the two thermal insulation splicing panels 32, a magnetic part 324 can be further provided on the basis of providing a concave-convex structure on the splicing surface between the two thermal insulation splicing panels 32. For example, a magnetic part 324 can be provided at the end of the convex strip on one thermal insulation splicing panel 32, and correspondingly, a magnetic part 324 is also provided at the bottom of the groove of the other thermal insulation splicing panel 32. The magnetic properties of the magnetic part 324 at the end of the convex strip and the magnetic part 324 at the bottom of the groove are opposite, so that the two thermal insulation splicing panels 32 can simultaneously achieve a tight splicing connection by utilizing the mutual interlacing of the concave-convex structure and the adsorption effect of the magnetic part 324.

[0068] In addition, the heat insulation board 3 in the present application can be made of any of the following materials: a nanoporous heat insulation board 3 or a zirconia ceramic board. In actual applications, the heat insulation board 3 needs to be pushed into the interior of the annealing furnace 1, so the shape and size of the heat insulation board 3 should be completely consistent with the shape and size of the inner cross-section of the annealing furnace 1. The heat insulation board 3 can also include a variety of different specifications and thicknesses, so that based on the actual annealing heat processing requirements of the semiconductor device to be processed, different numbers of heat insulation boards 3 of different thicknesses can be flexibly used to achieve more flexible adjustment of the temperature in the annealing furnace 1.

[0069] Furthermore, for the first furnace door 11, its diameter should be slightly larger than the outer diameter of the annealing furnace 1, so that it can be better sealed and connected to the end of the annealing furnace 1. In practical applications, a first sealing ring can be set at the edge of the port of the annealing furnace 1; and a second sealing ring is set on the side surface of the first furnace door 11 connected to the supporting bracket 2. When the second furnace door 12 is fitted and connected to the port of the annealing furnace 1, the first sealing ring can be just stuck into the inner ring of the second sealing ring, thereby realizing a sealed connection between the first furnace door 11 and the port of the annealing furnace 1.

[0070] As mentioned above, the first door 11 of the annealing furnace 1 needs to be opened and closed frequently, while the second door 12, although opened and closed less frequently, dissipates heat relatively quickly relative to the middle section of the annealing furnace 1. Therefore, the temperature in the end section near the second door 12 of the annealing furnace 1 is generally still lower than that in the middle section. Figures 6 to 8 As shown, in another optional embodiment of the present application, the annealing furnace equipment may further include:

[0071] The second furnace door 12 is a columnar platform that can be inserted into the end of the annealing furnace 1;

[0072] A plurality of heat-insulating blocks 121 are detachably provided on the end surface of the second furnace door 12 facing away from the annealing furnace 1 .

[0073] like Figure 2 and Figure 6As shown, unlike the first furnace door 11, the second furnace door 12 in this embodiment is a columnar platform that can be inserted into the annealing furnace 1. The cross-sectional shape of the columnar platform is exactly the same as the inner diameter cross-sectional shape of the annealing furnace 1. On this basis, this embodiment further provides detachable insulation blocks 121 on the second furnace door 12. Obviously, as the number of insulation blocks 121 provided on the second furnace door 12 changes, the thickness of the second furnace door 12 can be changed to a certain extent, thereby changing the insulation effect of the second furnace door 12. Similar to the function of the heat insulation board 3 provided on the end of the supporting bracket 2 connected to the first furnace door 11, in this embodiment, by changing the number of insulation blocks 121 on the second furnace door 12, the temperature of the end section of the annealing furnace 1 near the second furnace door 12 can be flexibly adjusted, thereby meeting the annealing heat treatment temperature requirements of different types of semiconductor devices to be processed.

[0074] Furthermore, if Figure 6 As shown, in Figure 6 In the illustrated embodiment, a plurality of blind holes 122 may be provided on the end surface of the second furnace door 12 facing away from the annealing furnace 1 , and correspondingly, each insulation block 121 may be pluggably inserted into each blind hole 122 .

[0075] It can be understood that the second furnace door 12 in this embodiment should have a certain thickness to ensure that a blind hole 122 of sufficient depth can be set on the second furnace door 12, thereby ensuring that the insulation block 121 can be firmly inserted into the blind hole 122 and not easily fall off. At the same time, the insulation block 121 can achieve the overall thickness change of the second furnace door 12 only by inserting it into or pulling it out of the blind hole 122, and the operation is simple and easy to implement.

[0076] On this basis, if Figures 6 to 8 As shown, in another optional implementation of this embodiment, the insulation block 121 may also include: an insulation rod of a first segment rod 1221 and a second segment rod 1222; the diameter of the first segment rod 1221 is greater than the diameter of the second segment rod 1222; the diameter of the blind hole 122 is the same as the diameter of the second segment rod 1222; and the depth of the blind hole 122 is equal to the length of the second segment rod 1222.

[0077] like Figure 8 As shown, the insulation rod in this embodiment includes a thicker second segment rod 1222 and a thinner first segment rod 1221. Accordingly, the second segment rod 1222 is also relatively short, while the length of the first segment rod 1221 is longer, specifically the same as the depth of the blind hole 122. Therefore, the thinner second segment rod 1222 in the insulation rod can be inserted into the blind hole 122, while the first segment rod 1221 is exposed outside, thereby facilitating the plugging and unplugging operation of the insulation rod.

[0078] like Figure 7As shown, a plurality of blind holes 122 are evenly provided on the second furnace door 12. In practical applications, the number of insulation rods inserted into the entire second furnace door 12 can be determined based on the heat treatment requirements of the semiconductor devices to be processed. The insulation rods can be inserted into some blind holes 122 in a scattered and even manner, or can be concentratedly inserted into the blind holes 122 in some local areas, as long as the temperature field distribution in the end section near the second furnace door 12 in the annealing furnace 1 ultimately meets the annealing requirements.

[0079] Of course, in actual application, the method of arranging the heat preservation block 121 on the second furnace door 12 is not limited to Figures 6 to 8 In another optional embodiment of the present application, the end surface of the second furnace door 12 facing away from the annealing furnace 1 may be further provided with a plurality of concentrically arranged annular grooves;

[0080] The heat-insulating block 121 is an annular heat-insulating ring for being inserted into each annular groove.

[0081] It is understandable that although the second furnace door 12 can be sealed and connected to the port of the annealing furnace 1, as the annealing furnace equipment is used for a longer time, the sealing between the second furnace door 12 and the annealing furnace 1 may decrease, thereby causing the heat dissipation at the edge of the second furnace door 12 to accelerate; at this time, it is possible to preferentially insert an annular insulation ring into the annular groove closest to the edge of the second furnace door 12, thereby increasing the insulation effect on the edge of the second furnace door 12.

[0082] In practical applications, an annular heat-insulating ring may be inserted into every other annular groove, so that the annular heat-insulating rings are evenly inserted into different areas of the second furnace door 12 .

[0083] In addition, although the insulation rod and the annular insulation ring can be arranged on the second furnace door 12 in an interlaced manner, in order to further improve the stability of the connection between the insulation rod and the annular insulation ring and the second furnace door 12 respectively, magnetic suction parts that can be attracted to each other can be set at the end of the insulation rod and the bottom of the blind hole 122, and magnetic suction parts that can be attracted to each other can be set at the end of the annular insulation ring and the bottom of the annular groove, thereby improving the stability of the connection between the insulation rod and the annular insulation ring on the second furnace door 12.

[0084] Based on the above discussion, in the present application, a detachably connected insulation block 121 is provided on the surface of the second furnace door 12 facing away from the annealing furnace 1. Without opening the second furnace door 12, the temperature of the end section of the annealing furnace 1 close to the second furnace door 12 can be flexibly adjusted, which is convenient to operate and low in cost.

[0085] In addition, the second furnace door 12 and the heat-insulating block 121 in this embodiment may also be made of zirconia ceramic structure.

[0086] Based on any of the above embodiments, in another optional embodiment of the present application, the annealing furnace equipment may further include:

[0087] At least three annular heat-insulating rings 4 are detachably connected to the outer surface of the annealing furnace 1 ; one annular heat-insulating ring 4 is provided in each of the middle section and the two sections of the annealing furnace 1 .

[0088] In this embodiment, at least three annular heat-insulating rings 4 are further provided on the outer surface of the annealing furnace 1 , so as to insulate the side surface of the annealing furnace 1 .

[0089] For example, when the temperature required for the heat treatment of the semiconductor device to be processed is relatively high, the entire outer surface of the annealing furnace 1 can be wrapped with an annular thermal insulation ring 4, so that the heating device in the annealing furnace 1 can ensure that the temperature in the annealing furnace 1 reaches the processing requirement temperature while outputting a smaller heating power.

[0090] For example, when the heat treatment of the semiconductor device to be processed requires that the temperature of the middle section of the annealing furnace 1 be higher than the temperature of the two end sections and have a higher temperature difference, an annular insulation ring can be set only on the outer surface of the middle section of the annealing furnace 1.

[0091] For example, when the heat treatment of the semiconductor device to be processed requires that the temperature of the two end sections of the annealing furnace 1 is higher than the temperature of the middle section, an annular thermal insulation ring can be set on the outer surface of the two end sections of the annealing furnace 1, and a thermal insulation plate 3 and an insulation block 121 can be set at the first furnace door 11 and the second furnace door 12 respectively. This coordinated arrangement can improve the insulation effect of the two end sections of the annealing furnace 1.

[0092] It can be seen that in this application, the annular thermal insulation ring 4 is arranged on the outer surface of the annealing furnace 1 in different ways, so that the temperature in the annealing furnace 1 can be adjusted more flexibly, thereby meeting the heat treatment requirements of various semiconductor devices to be processed.

[0093] In addition, if Figure 2 As shown, each annular heat insulation ring 4 can be composed of two semi-annular heat insulation rings 4 spliced ​​together.

[0094] To sum up, in the annealing furnace equipment in the present application, a plurality of detachable heat insulation panels are interspersed at the end where the supporting bracket and the first furnace door are connected; the first furnace door connected to the supporting bracket is the furnace door that is opened more frequently on the annealing furnace, so the temperature drop gradient in the end area close to the first furnace door in the annealing furnace is larger. In order to be able to more flexibly adjust the temperature field changes in the end interval close to the first furnace door in the annealing furnace in the present application, a heat insulation panel is detachably provided on the end of the supporting bracket close to the first furnace door. Based on the different number of heat insulation panels, the temperature field in the end area close to the first furnace door in the annealing furnace can be flexibly adjusted to change according to different gradients, thereby meeting the requirements of different semiconductor device processing for the temperature field in the annealing furnace, realizing low-cost and flexible control of the temperature field of the annealing furnace equipment, and facilitating the wide application of the annealing furnace equipment.

[0095] like Figure 9 As shown, Figure 9 This is a flow chart of an annealing control method for an annealing furnace device provided in an embodiment of the present application. This application also provides an embodiment of an annealing control method for an annealing furnace device, which is applied to the annealing furnace device described in any of the above embodiments, and the annealing control method includes:

[0096] S1: determining temperature parameters of a middle area and two end areas of an annealing furnace in an annealing furnace device according to the device type of the semiconductor device to be processed;

[0097] S2: placing an annealing tube in an annealing furnace via a supporting bracket; wherein the semiconductor device to be processed is placed in the annealing tube;

[0098] S3: Arrange a corresponding number of heat insulation boards on the supporting bracket according to the temperature parameters.

[0099] It should be noted that in actual applications, the number of heat insulation plates provided on the support bracket should be determined together with the heating power of the heater in the annealing furnace and the temperature parameters required for annealing the semiconductor device to be processed.

[0100] Optionally, the method further includes:

[0101] S4: detecting the temperature of different sections of the corresponding annealing tube in the annealing furnace to obtain temperature data;

[0102] S5: According to the temperature data, the insulation block provided on the second furnace door in the annealing furnace equipment is adjusted until the temperature of different sections in the annealing tube reaches the set temperature range.

[0103] Different temperature sections in the annealing tube can be respectively equipped with temperature measuring couplers to measure the temperature data at different positions of the annealing tube; for example, the temperature data corresponding to the two ends and the middle position of the annealing tube. Once the temperature data at the three different positions do not meet the annealing heat treatment process requirements, the number of insulation blocks provided on the second furnace door is adjusted to increase or decrease, thereby ensuring that the temperature of different sections in the annealing tube is within the set temperature range required for the heat treatment.

[0104] In an optional embodiment of the present application, the semiconductor device to be processed can be specifically a mercury cadmium telluride wafer 52. Accordingly, the annealing tube 5 is a tubular structure with an opening at only one end. The open end of the annealing tube 5 will be sealed during the actual heating and annealing process of the mercury cadmium telluride wafer 52, that is, a sealing interface is formed.

[0105] During the heating and annealing process of the HgCdTe wafer 52, the HgCdTe wafer 52 should be placed in the middle section of the annealing tube 5, and a mercury source 51 is also provided at the end of the annealing tube 5 away from the sealing port. Based on this, the heating and annealing process of the HgCdTe wafer 52 in this embodiment may include:

[0106] 1) Preheating the HgCdTe Wafer: Place the annealing tube 5 on the support bracket 2, and push the support bracket 2 into the hearth of the annealing furnace 5 until the HgCdTe wafer 52 enters the hearth of the annealing furnace 5 and the mercury source 51 does not enter the hearth of the annealing furnace 5. After maintaining this position for 1 to 5 minutes, push the support bracket 2 completely into the annealing furnace 5.

[0107] In this step, the HgCdTe wafer 52 is preheated to ensure that the temperature of the HgCdTe wafer 52 is always higher than the temperature of the mercury source 51 during the entire heating process, thereby preventing a large number of mercury pits from forming on the surface of the HgCdTe wafer 52 .

[0108] In addition, in this step, two annealing tubes 5 can be bound together and in parallel on the supporting bracket 2. One of the annealing tubes 5 is provided with a mercury cadmium telluride wafer 52 and a mercury source 51, and serves as the annealing tube 5 for annealing processing, while the other is used as a temperature measurement reference annealing tube. A temperature measuring thermocouple is provided in the middle section, the sealing interface, and the end position away from the sealing interface of the temperature measurement reference annealing tube. Obviously, the temperature data measured by the three temperature measuring thermocouples are the temperature data of the three positions of the sealing interface, the mercury cadmium telluride wafer 52, and the mercury source 51 in the annealing tube 5 corresponding to the annealing processing.

[0109] 2) Heat treatment: Heat treatment is performed according to the pre-set temperature zone characteristics.

[0110] The key point in this step is to determine the temperature data corresponding to the three positions of the HgCdTe wafer, the mercury source, and the sealing interface on the annealing tube.

[0111] As described above, the temperature data of the three positions of the HgCdTe wafer 52, the mercury source 51, and the sealing interface can be indirectly measured by measuring the temperature with reference to the three temperature measuring thermocouples in the annealing tube. On this basis, by continuously plugging and unplugging the insulation block 121 in the rear-end module of the annealing furnace equipment and increasing or decreasing the number of the heat insulation plates 3 in the front-end module, the front-end and rear-end temperatures of the annealing furnace 5 are lowered, and the temperature at the positions of the mercury source 51 and the sealing interface in the annealing tube 5 is gradually lowered than the temperature at the position of the HgCdTe wafer 52 until the desired temperature is reached. In this way, the heat treatment process of the HgCdTe wafer 52 can be carried out according to the specified mercury pressure, and at the same time, a large number of mercury etching pits formed due to the small temperature difference between the HgCdTe wafer and the mercury source can be avoided.

[0112] 3) Mercury source precooling: After the HgCdTe wafer 52 has completed heat treatment, the support bracket 2 is pulled out of the furnace of the annealing furnace 5 until the mercury source 51 just extends out of the furnace mouth of the annealing furnace 5. After the mercury source 51 has cooled for 1 to 5 minutes, the support bracket 2 is completely pulled out and the annealing tube 5 is removed.

[0113] In this step, the mercury source 51 is first cooled to ensure that the temperature of the mercury source 51 is always lower than the temperature of the HgCdTe wafer 52 during the entire cooling process, thereby avoiding the formation of a large number of mercury corrosion pits on the surface of the HgCdTe wafer 52.

[0114] In this embodiment, the above process is used to ensure that mercury pits are avoided during the heat treatment of the mercury cadmium telluride wafer, thereby improving the reliability of the heat treatment process.

[0115] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device comprising a series of elements are inherent to the elements. In the absence of further restrictions, the elements limited by the statement "comprise one..." do not exclude the presence of other identical elements in the process, method, article or device comprising the elements. In addition, the above-mentioned technical solutions provided in the embodiments of the present application are not described in detail in accordance with the corresponding technical solutions in the prior art to achieve the same principle, so as to avoid excessive elaboration.

[0116] The principles and implementation methods of the present invention are described herein using specific examples. The description of the above examples is only intended to help understand the method and core concept of the present invention. It should be noted that those skilled in the art may make various improvements and modifications to the present invention without departing from the principles of the present invention, and such improvements and modifications also fall within the scope of protection of the present invention.

Claims

1. An annealing furnace device, characterized in that: It includes an annealing furnace with a cylindrical structure; a first furnace door and a second furnace door respectively provided at both ends of the annealing furnace; Wherein, the first furnace door is connected to a supporting bracket which can be inserted into the annealing furnace; the supporting bracket is a strip plate structure for supporting the semiconductor device to be processed; A heat insulation board is detachably provided on the end of the supporting bracket that is interconnected with the first furnace door; the shape of the heat insulation board is the same as the cross-sectional shape of the annealing furnace; and a through-hole structure with the same cross-sectional shape as the supporting bracket is provided in the central area of ​​the heat insulation board, and the end of the supporting bracket passes through the through-hole structure.

2. The annealing furnace equipment according to claim 1, characterized in that The thermal insulation board comprises two thermal insulation splicing boards; the two thermal insulation splicing boards are spliced ​​together to form the thermal insulation board; The two thermal insulation splicing plates both have a groove structure; when the two thermal insulation splicing plates are spliced ​​together to form the thermal insulation board, the through-hole structure is formed between the two groove structures.

3. The annealing furnace equipment according to claim 2, characterized in that The parts where the two heat-insulating splicing panels are spliced ​​and bonded to each other are concave-convex structures that can be interpenetrated with each other; And / or, the locations where the two thermal insulation splicing panels are spliced ​​and bonded to each other are provided with magnetic attracting parts that can attract each other.

4. The annealing furnace equipment according to any one of claims 1 to 3, characterized in that: The second furnace door is a columnar platform that can be inserted into the end of the annealing furnace; A plurality of heat-insulating blocks are detachably provided on the end surface of the second furnace door facing away from the annealing furnace.

5. The annealing furnace equipment according to claim 4, characterized in that: A plurality of blind holes are provided on the end surface of the second furnace door facing away from the annealing furnace; The heat-insulating blocks are pluggable and inserted into the blind holes.

6. The annealing furnace equipment according to claim 4, characterized in that The end surface of the second furnace door facing away from the annealing furnace is provided with a plurality of concentrically arranged annular grooves; The heat-insulating block is an annular heat-insulating ring for being clamped into each of the annular grooves.

7. The annealing furnace equipment according to claim 4, characterized in that The second furnace door and the insulation block are both made of zirconia ceramics; The heat insulation board is a nano porous heat insulation board or a zirconia ceramic board.

8. The annealing furnace equipment according to claim 1, characterized in that At least three annular heat-insulating rings are detachably connected to the outer surface of the annealing furnace; one of the three annular heat-insulating rings is provided in each of the middle section and the two sections of the annealing furnace.

9. An annealing control method for an annealing furnace device, characterized in that: Applied to the annealing furnace equipment according to any one of claims 1 to 8, the annealing control method comprises: Determining temperature parameters of a middle region and two end regions of an annealing furnace in an annealing furnace device according to the device type of the semiconductor device to be processed; The annealing tube is supported and placed in the annealing furnace by a supporting bracket; wherein the semiconductor device to be processed is placed in the annealing tube; A corresponding number of heat insulation boards are arranged on the supporting bracket according to the temperature parameters.

10. The annealing control method of the annealing furnace equipment according to claim 9, characterized in that: The semiconductor device to be processed is a mercury cadmium telluride wafer disposed in the middle section of the annealing tube; A mercury source is provided at the end of the annealing tube away from the sealing interface; The method of supporting and arranging the annealing tube in the annealing furnace by a supporting bracket includes: Placing the annealing tube on a supporting bracket, pushing the supporting bracket into the furnace of the annealing furnace until the mercury cadmium telluride wafer enters the furnace of the annealing furnace and the mercury source does not enter the furnace of the annealing furnace, and keeping it for 1 minute to 5 minutes, then completely pushing the supporting bracket into the annealing furnace; After arranging a corresponding number of heat insulation boards on the supporting bracket according to the temperature parameters, the method further includes: The supporting bracket is pulled out of the annealing furnace until the mercury cadmium telluride wafer is located in the furnace of the annealing furnace and the mercury source is located outside the furnace of the annealing furnace, and maintained for 1 minute to 5 minutes, and then the supporting bracket is completely pulled out of the annealing furnace.

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