Method for adaptively matching impedance according to protocol and connector

Abstract

The invention relates to the technical field of connectors, in particular to a method for adaptively matching impedance according to a protocol and a connector, and the method comprises the following steps: A, embedding a quantum dot array in a dielectric layer for signal transmission of the connector; b, detecting the type of a communication protocol accessed by the connector in real time, and generating a protocol identification signal; c, calling a target impedance value Ztarget from a pre-stored multi-protocol impedance database according to the protocol identification signal; d, applying bias voltage to regulate and control the electron tunneling probability Pt of the quantum dots; e, changing an effective dielectric constant epsilon eff based on the electron tunneling probability Pt, and dynamically adjusting a distributed capacitance value C; and F, correcting the bias voltage through closed-loop feedback to realize continuous impedance matching. According to the invention, real-time, continuous and high-precision dynamic matching of impedance in a multi-protocol hot switching scene is realized through the electric control dielectric characteristics of the quantum dot array, and the problems of switching delay, mechanical loss and narrow adjustment range in a traditional scheme are solved. The bottleneck of the traditional data transmission rate is broken through, and the high-speed interconnection reliability and performance are guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of connectors, and in particular to a method for adaptively matching impedance according to a protocol and a connector. Background Art

[0002] High-speed electronic connectors, core components of cloud computing data centers, play a crucial role in high-speed signal transmission between servers and storage devices (e.g., supporting protocols such as PCIe 5.0 / 6.0 and SAS 4.0). As data rates continue to climb and surpass 56Gbps, signal integrity faces unprecedented challenges. Different high-speed serial communication protocols impose stringent and differentiated requirements on the characteristic impedance of transmission lines.

[0003] Traditional impedance matching solutions rely primarily on physically replacing termination resistors or employing mechanical switch arrays. However, these solutions have significant drawbacks: First, their switching response latency is high, making it difficult to meet the stringent real-time requirements of hot-swap (hot plug) protocols in multi-protocol interface applications. Second, mechanical contacts are susceptible to wear and aging due to frequent operation, leading to impedance drift and severely impacting long-term stability and reliability. Although some existing electronic control technologies (such as those based on semiconductor switches or micro-electromechanical systems) can avoid the problem of mechanical losses, they are still subject to inherent limitations: narrow impedance adjustment range, excessive power consumption, and generally unable to achieve continuous and precise dynamic control of dielectric parameters.

[0004] Therefore, faced with core problems such as switching hysteresis, insufficient accuracy, and poor structural reliability in traditional solutions in high-speed multi-protocol scenarios, the industry urgently needs to develop an adaptive impedance matching technology that can identify communication protocols in real time and dynamically and accurately adapt impedances, so as to break through the bottleneck of current data transmission rates and ensure the reliability and performance of high-speed interconnection. Summary of the Invention

[0005] The present invention aims to address the shortcomings of existing technologies by providing a method and connector for adaptive impedance matching based on protocols. By leveraging the electrically controlled dielectric properties of quantum dot arrays, this method enables real-time, continuous, and high-precision dynamic impedance matching in multi-protocol hot switching scenarios. This method completely resolves the switching delays, mechanical losses, and narrow adjustment range issues inherent in traditional solutions, breaking through the bottleneck of traditional data transmission rates and ensuring the reliability and performance of high-speed interconnects.

[0006] To achieve the above object, the present invention provides a method for adaptively matching impedance according to a protocol, comprising the following steps: A. Embed a quantum dot array in the dielectric layer of the connector signal transmission; B. Real-time detection of the communication protocol type connected to the connector and generation of a protocol identification signal; C. According to the protocol identification signal, the target impedance value Z is retrieved from the pre-stored multi-protocol impedance database. target ; D. Apply bias voltage to control the electron tunneling probability P of quantum dots t ; E. Based on the electron tunneling probability P t Changing the equivalent dielectric constant ε eff , dynamically adjust the distributed capacitance value C; F. Continuous impedance matching is achieved by correcting the bias voltage through closed-loop feedback.

[0007] Preferably, the quantum dot array is embedded in the signal transmission medium layer in a hexagonal close-packed structure; The surface of the quantum dots is modified with thiol molecules to form a coordination bonding layer, wherein the thiol molecules are oriented perpendicular to the dielectric layer, with an orientation deviation of ≤5°, and the direction of the molecular dipole moment is parallel to the electric field vector; The surface of quantum dots is coated with a barrier layer to form a periodic barrier structure to suppress the overlap of electron tunneling paths; The periodic barrier layer adopts a gradient doping process, and the thickness of the barrier layer increases from 2nm to 5nm along the signal transmission direction, with a step increment of 0.5nm / μm, to achieve linear regulation of the electron tunneling probability Pt; The quantum dot array is integrated with the bias control circuit of the flexible printed circuit through eutectic bonding.

[0008] Preferably, the quantum dot electron tunneling probability P is regulated by the bias voltage. t In the steps, the control circuit performs phased voltage output: In the initial matching stage, when the impedance deviation is detected When the high-frequency pulse voltage with a frequency of >1MHz is output, the polarization direction of the quantum dots is quickly changed through the alternating electric field, accelerating the convergence of the tunneling probability. In the steady-state matching stage, when the impedance deviation When the voltage is 0–3 V, the DC bias is switched to maintain the stability of the polarization state of the quantum dots to achieve continuous impedance matching.

[0009] Preferably, the bias voltage is applied using a bipolar driving strategy, which includes: A forward bias control mechanism applies a forward bias of 0V to +3V to the quantum dot array via the bias control circuit of the flexible printed circuit when it is detected that the distributed capacitance value C needs to be increased; Negative bias control mechanism: when it is detected that the distributed capacitance value C needs to be reduced, a negative bias of -1V to 0V is applied to the quantum dot array through the bias control circuit of the flexible printed circuit.

[0010] Preferably, the multi-protocol impedance database stores the standard impedance value Z of each communication protocol.Protocol , and construct the impedance temperature mapping function Z adjusted , impedance temperature mapping function , Among them, Z protocol The standard impedance value for the protocol includes 85Ω for PCIe protocol, 90Ω for SAS protocol, and 100Ω for InfiniBand protocol. ΔT is the real-time temperature of the connector T real and ambient reference temperature T base The difference between K1 is the protocol impedance weight coefficient, ranging from 0.95 to 1.05; K2 is the temperature compensation coefficient, and its value range is -0.15Ω / ℃~+0.15Ω / ℃; The impedance temperature mapping function Z adjusted The impedance weight coefficient K1 is used to correct the manufacturing tolerance of the equipment, and the temperature compensation coefficient K2 is used to linearly offset the impedance drift caused by the thermal expansion of the material, so that the actual impedance value of the connector is relative to the target impedance value Z within the operating temperature range of -40℃~125℃. target The deviation is ≤±1.5Ω, thereby ensuring the signal eye opening ≥0.7UI at a 56Gbps transmission rate.

[0011] Preferably, when two or more communication protocol identification signals are detected at the same time, the priority arbitration mechanism is started, and the target impedance value Z is selected according to the preset protocol priority order of PCIe protocol>SAS protocol>InfiniBand protocol. target , driving the bipolar bias circuit for dynamic matching.

[0012] Preferably, when detecting an unknown communication protocol type, dynamic impedance matching of the unknown communication protocol type is achieved by the following steps: C1. Real-time acquisition of the time domain waveform of the unknown protocol transmission signal, and extraction of signal characteristic parameters based on eye diagram analysis, including eye height, eye width, and time jitter value; C2. According to the signal characteristic parameters, the optimal target impedance value Z is matched through the multi-protocol impedance database optimized ; C3. Generate a temporary impedance mapping entry, store the signal characteristic parameters and Z optimized the relationship between C4. When a protocol with the same signal characteristic parameters is detected later, Z is automatically called. optimized Drive bipolar bias circuit for impedance matching; At the moment of protocol switching, a transition pulse with a width of 5ns and an amplitude of 50% of the bias value corresponding to the target impedance is injected into the bias control circuit to suppress the signal ringing phenomenon during the impedance matching process and ensure that the eye opening attenuation is ≤10%.

[0013] Preferably, the reflection waveform of the connector transmission path is collected in real time by a time domain reflectometer. measured The standard value Z of the protocol library protocol When the absolute value of the deviation is ≥ 2Ω, the impedance tolerance range of the corresponding protocol in the protocol library is adaptively updated.

[0014] Preferably, it also includes a multi-level failure protection mechanism, which is provided with a real-time monitoring layer, a rapid response layer and a system maintenance layer; The real-time monitoring layer includes the following steps: The local temperature data is collected in real time by the micro temperature sensor on the surface of quantum dots, and based on the formula Calibrate the equivalent dielectric constant error; Real-time monitoring of quantum dot tunneling current. When the current suddenly exceeds the threshold by 20% within 1μs, the bias cut-off protection is triggered. The rapid response layer includes the following steps: If three consecutive impedance matching operation timeouts are detected, and each timeout period is greater than 10μs, the impedance matching mode is immediately switched to the preset 100Ω default impedance; the sound and light alarm device is activated to output a three-level beep and red light flashing signal; The signal transmission path is switched from the main quantum dot array to the backup quantum dot array within 100ns through a micro-electromechanical switch; at the same time, an array switching completion instruction is sent to the protocol recognition module to lock the current communication protocol parameters; The system maintenance layer includes the following steps: During the data transmission interval, a full impedance range scan of 70-130Ω is periodically performed to detect the impedance drift caused by quantum dot aging; according to the magnitude and direction of the impedance drift, the compensation coefficient K2 in the impedance temperature mapping function is proportionally and reversely adjusted; When the impedance drifts in the positive direction, the absolute value of the compensation coefficient K2 is reduced by a fixed ratio of 0.12; When the impedance drifts negatively, the absolute value of the compensation coefficient K2 is increased at a fixed ratio of 0.12; The adjustment amplitude is linearly related to the impedance drift, ensuring that the temperature drift compensation accuracy after aging is maintained within the range of ±1.5Ω.

[0015] Another aspect further provides a connector for performing the above-mentioned method for adaptively matching impedance according to a protocol, comprising: The dielectric layer is composed of a modified polyimide matrix, and the dielectric layer has a quantum dot array embedded in it through a laser-etched micro-pit array for high-speed signal transmission; The protocol identification module detects the type of communication protocol being accessed in real time and generates a protocol identification signal; Multi-protocol impedance database, which stores the standard impedance value and impedance temperature mapping function of each communication protocol, and outputs the target impedance value Z according to the protocol identification signal target ; The bias control circuit is connected to the quantum dot array and applies a bipolar bias voltage of 0V~+3V or -1V~0V to control the electron tunneling probability P of the quantum dots. t ; Dynamic tuning module, based on the electron tunneling probability P through the Al2O3 gradient barrier layer of the quantum dot array t Changing the equivalent dielectric constant ε eff , dynamically adjust the distributed capacitance value C to achieve impedance matching; The closed-loop feedback circuit uses a fuzzy PID controller to correct the bias voltage in real time according to the impedance deviation ΔZ to maintain Z target Stability of fluctuation ≤±1.5Ω.

[0016] The beneficial effects of this invention include: leveraging the electrically controlled dielectric properties of quantum dot arrays to achieve real-time, continuous, and high-precision dynamic impedance matching in multi-protocol hot switching scenarios, completely resolving the switching delays, mechanical losses, and narrow adjustment range issues inherent in traditional solutions. This approach also breaks through the bottleneck of traditional data transmission rates, ensuring the reliability and performance of high-speed interconnects. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 The present invention is a block diagram of the steps of a method for adaptively matching impedance according to a protocol.

[0018] Figure 2 The figure is a schematic block diagram of the working principle of a connector of the present invention. DETAILED DESCRIPTION

[0019] The present invention is described in detail below with reference to the accompanying drawings.

[0020] like Figure 1 As shown, a method for adaptively matching impedance according to a protocol of the present invention includes the following steps: A. A quantum dot array is embedded in the dielectric layer of the connector's signal transmission system. Under the influence of an electric field, the quantum dots produce a quantum confinement effect. Electron tunneling behavior changes the material's polarization response, thereby regulating the dielectric constant of the dielectric layer. This eliminates mechanical wear, extends device life, and enables continuous electrical control of dielectric parameters.

[0021] B. Real-time detection of the communication protocol type connected to the connector generates a protocol identification signal. It identifies the current communication protocol type by analyzing the transmission signal characteristics and outputs the corresponding digital identification signal. It supports automatic switching of protocols in hot-swappable scenarios and adapts to multi-protocol mixed environments.

[0022] C. According to the protocol identification signal, the target impedance value Z is retrieved from the pre-stored multi-protocol impedance database. target ; According to the protocol identification signal, the target impedance value Z is retrieved from the preset multi-protocol impedance database target . Ensure that impedance matching meets the protocol specification accuracy and avoid real-time calculation delays.

[0023] D. Apply bias voltage to control the electron tunneling probability P of quantum dots t ; Applying bias voltage changes the band structure of quantum dots, making the electron tunneling probability P t It changes exponentially with voltage, achieving nanosecond response speed and significantly reducing power consumption.

[0024] E. Based on the electron tunneling probability P t Changing the equivalent dielectric constant ε eff , dynamically adjust the distributed capacitance value C; electron tunneling probability P t The change of the equivalent dielectric constant ε is directly controlled eff , thereby continuously changing the transmission line distributed capacitance value C. Impedance matching is achieved through distributed parameter adjustment, supporting sub-ohm precision control.

[0025] F. Continuous impedance matching is achieved through closed-loop feedback to correct bias voltage. The deviation between actual and target impedances is compared in real time, and the bias voltage is dynamically corrected to achieve continuous matching. Environmental interference is automatically compensated for, maintaining long-term stability and high accuracy.

[0026] By leveraging the electrically controlled dielectric properties of quantum dot arrays, this technology enables real-time, continuous, and high-precision dynamic impedance matching in multi-protocol hot switching scenarios, completely resolving the switching delays, mechanical losses, and narrow adjustment range issues inherent in traditional solutions. This technology breaks through the bottleneck of traditional data transmission rates and ensures the reliability and performance of high-speed interconnects.

[0027] During operation, when a high-speed electronic connector is connected to a device, the connector real-time detection module automatically identifies the current communication protocol type by analyzing the physical characteristics of the transmission signal and generates a corresponding digital protocol identification signal. The control unit immediately retrieves the target impedance value Z from the pre-stored multi-protocol impedance database based on the identification signal. target Subsequently, the digital-to-analog converter generates a precise bias voltage that is applied to the quantum dot array embedded in the dielectric layer. This voltage changes the quantum dot band structure, which makes the electron tunneling probability P t An exponential change occurs, thereby continuously regulating the equivalent dielectric constant ε of the dielectric layer eff. Equivalent dielectric constant ε eff The dynamic changes of the impedance directly affect the distributed capacitance C of the transmission line, and the impedance value is adjusted according to the physical relationship between impedance and capacitance. During this process, the time domain reflectometer continuously samples the actual impedance, and the control unit compares the measured value with the target value in real time. The bias voltage is dynamically corrected through a closed-loop feedback algorithm to compensate for the deviation, ultimately maintaining the impedance stability within the accuracy range required by the target protocol. When the protocol undergoes a hot switch, the system can complete the entire process from protocol re-identification to impedance re-matching within 500 nanoseconds, with no mechanical action and power consumption less than 5 milliwatts, completely solving the problems of switching hysteresis, mechanical wear and insufficient adjustment accuracy of traditional solutions.

[0028] The quantum dot array of this embodiment is embedded in the signal transmission medium layer in a hexagonal close-packed structure. This allows the quantum dots to be embedded in the medium layer in a three-dimensional closest-packed manner, maximizing the quantum dot density per unit volume. This improves the sensitivity of dielectric constant control and expands the impedance adjustment range.

[0029] The quantum dots are surface-modified with thiol molecules to form a coordinated bonding layer. The thiol molecules are oriented perpendicular to the dielectric layer, with an orientation deviation of ≤5° and a molecular dipole moment parallel to the electric field vector. The thiol molecules are perpendicularly bonded to the quantum dot surface through sulfur atom coordination bonds, with a deviation of ≤5° between the molecular long axis and the dielectric layer normal and a dipole moment parallel to the electric field. This enhances the driving force of the electric field on molecular polarization, improving dielectric response speed and energy efficiency.

[0030] Among them, the quantum dots are CdSe nanocrystals with a diameter of 5nm-10nm and an array spacing of ≤20nm.

[0031] The general formula of mercapto molecules is HS-R, where the R group is an alkyl chain (C4–C 12 ); Sulfur atoms (-SH) and cadmium ions (Cd 2+ ) forms a Cd-S coordination bond with a bond energy ≥ 210 kJ / mol; The alkyl chain (R) extends outward to form a molecular dipole moment (μ=1.8D–2.4D), enhancing the electric field response sensitivity.

[0032] The surface of the quantum dots is coated with a barrier layer to form a periodic barrier structure to suppress the overlap of electron tunneling paths. The periodic barrier layer adopts a gradient doping process. The thickness of the barrier layer increases from 2nm to 5nm along the signal transmission direction, with a step increment of 0.5nm / μm, realizing linear regulation of the electron tunneling probability Pt. Specifically, the barrier layer is an aluminum oxide barrier layer coated on the surface of the quantum dots, with a thickness of 2nm-5nm, so that the barrier layer is coated on the surface of the coordination bonding layer.

[0033] According to the quantum tunneling effect, the electron tunneling probability P tIt has a negative exponential relationship with the barrier layer thickness d, and the equation is: , where P t is the electron tunneling probability; d is the barrier thickness; m is the electron mass; ϕ is the barrier height, ϕ eff =ϕ0−eV bias ; ℏ is the reduced Planck constant (e.g., 1.05×10 -34 J.s).

[0034] When the barrier layer thickness d is small (input end), the electron tunneling probability P t Increase, equivalent dielectric constant ε eff As it increases, the distributed capacitance value C increases; When the barrier layer thickness d is large (output end), the electron tunneling probability P t Reduce the equivalent dielectric constant ε eff The distributed capacitance C decreases. The electric field intensity attenuation is offset by the gradient of the barrier layer thickness d, making the electron tunneling probability P t It changes linearly along the transmission path, achieving continuous impedance adjustment.

[0035] The quantum dot array and the bias control circuit of the flexible printed circuit are integrated through eutectic bonding. This eliminates interfacial contact resistance and improves bias control accuracy and mechanical reliability.

[0036] Among them: the bonding material is Au-Sn alloy (melting point 280℃), and the shear strength is ≥25MPa; The bonding interface is embedded with an insulating SiO2 nanocolumn array (diameter ≤ 100nm, height 100nm, spacing 200nm). The SiO2 nanocolumn array makes the parasitic capacitance of the bonding interface ≤ 0.05pF and the leakage current ≤ 0.1μA@3V, forming a physical isolation barrier to prevent leakage current.

[0037] In this embodiment, the bias voltage is used to control the tunneling probability P of quantum dots. t In the steps, the control circuit performs phased voltage output: In the initial matching stage, when the impedance deviation is detected When the device is in operation, a high-frequency pulse voltage with a frequency of >1MHz is output, which quickly changes the polarization direction of the quantum dots through the alternating electric field, accelerates the convergence of the tunneling probability, and achieves nanosecond impedance initial matching.

[0038] In the steady-state matching stage, when the impedance deviation When the polarization state of the quantum dots is stable, the bias voltage is switched to 0–3 V DC to achieve continuous impedance matching, thus avoiding continuous polarization energy consumption and ensuring long-term stable impedance matching.

[0039] The bias voltage applied in this embodiment adopts a bipolar driving strategy, which includes: The forward bias control mechanism applies a forward bias of 0V to +3V to the quantum dot array through the bias control circuit of the flexible printed circuit when it detects that the distributed capacitance value C needs to be increased; accurately improves the equivalent dielectric constant and realizes continuous positive adjustment of the capacitance value.

[0040] Specifically, the forward bias increases the electron tunneling probability P by reducing the effective barrier height of the quantum dot. t ; Increased electron tunneling probability P t Leading to the equivalent dielectric constant ε eff Improve, thereby increasing the distributed capacitance value C, and realizing positive regulation of the capacitance value.

[0041] The negative bias control mechanism applies a negative bias voltage between -1V and 0V to the quantum dot array via the bias control circuit of the flexible printed circuit when the distributed capacitance C needs to be reduced. This precisely reduces the equivalent dielectric constant and enables continuous negative capacitance adjustment.

[0042] Specifically, the negative bias increases the effective barrier height of the quantum dot and reduces the electron tunneling probability P t ; Reduced electron tunneling probability P t Leading to the equivalent dielectric constant ε eff Reduce, thereby reducing the distributed capacitance value C, and achieving negative regulation of the capacitance value.

[0043] Through the coordinated regulation of forward bias and negative bias, the distributed capacitance value C can be adjusted bidirectionally and continuously within a range of ±35%, and the impedance matching range is extended to 70Ω-130Ω.

[0044] Forward bias increases capacitance, while negative bias decreases it, enabling bidirectional capacitance control with one-percent accuracy. Alternating positive and negative voltages neutralizes ion migration, extending the lifespan of the quantum dot array tenfold. Zero bias completely shuts off the current path, reducing steady-state power consumption to nanowatts.

[0045] The multi-protocol impedance database of this embodiment stores the standard impedance value Z of each communication protocol Protocol , and construct the impedance temperature mapping function Z adjusted , impedance temperature mapping function , Among them, Z protocol This is the protocol standard impedance value, which includes PCIe protocol: 85Ω, SAS protocol: 90Ω, and InfiniBand protocol: 100Ω. It provides protocol matching benchmark values ​​to ensure that the impedance meets international standards.

[0046] ΔT is the real-time temperature of the connector T real and ambient reference temperature T base The difference between K1 is the protocol impedance weight coefficient, ranging from 0.95 to 1.05; K2 is the temperature compensation coefficient, and its value range is -0.15Ω / ℃~+0.15Ω / ℃; Impedance-temperature mapping function Z adjusted The impedance weight coefficient K1 is used to correct the manufacturing tolerance of the equipment, and the temperature compensation coefficient K2 is used to linearly offset the impedance drift caused by the thermal expansion of the material, so that the actual impedance value of the connector is relative to the target impedance value Z within the operating temperature range of -40℃~125℃. target The deviation is ≤±1.5Ω, thus ensuring the signal eye opening ≥0.7UI at a 56Gbps transmission rate. Automatically compensate for the influence of temperature drift and maintain the target impedance value Z target Stability under all working conditions.

[0047] In this embodiment, when two or more communication protocol identification signals are detected at the same time, the priority arbitration mechanism is started, and the target impedance value Z is selected according to the preset protocol priority order of PCIe protocol>SAS protocol>InfiniBand protocol. target , driving the bipolar bias circuit for dynamic matching. This avoids impedance matching confusion caused by protocol conflicts and ensures deterministic system response. Enforced priority rules eliminate multi-protocol contention, with decision latency under 20 nanoseconds. This permanently prioritizes the PCIe protocol, ensuring zero interruption for critical cloud computing services. The entire arbitration to execution process takes 50 nanoseconds, meeting the real-time requirements of protocol hot-swap.

[0048] When detecting an unknown communication protocol type, the present embodiment implements dynamic impedance matching of the unknown communication protocol type through the following steps: C1. Real-time acquisition of the time domain waveform of the unknown protocol transmission signal. Signal characteristic parameters, including eye height, eye width, and time jitter, are extracted based on eye diagram analysis. Specifically, eye diagram analysis uses a 16GSa / s ADC chip to acquire the time domain waveform, and a convolutional neural network (CNN) processor extracts characteristic parameters. A quantitative model of the unknown protocol signal characteristics is established, providing a data foundation for impedance matching.

[0049] C2. According to the signal characteristic parameters, the optimal target impedance value Z is matched through the multi-protocol impedance database optimized ; Achieve adaptive instant matching of unknown protocols to avoid manual configuration delays.

[0050] C3. Generate temporary impedance mapping entries, store signal characteristic parameters and Z optimized the relationship between C4. When a protocol with the same signal characteristic parameters is detected later, Z is automatically called. optimizedDrive the bipolar bias circuit for impedance matching; when the same protocol appears again, the historical optimal value is directly called, and the matching speed is increased by a thousand times.

[0051] At the moment of protocol switching, a transition pulse with a width of 5ns and an amplitude of 50% of the bias value corresponding to the target impedance is injected into the bias control circuit to suppress the signal ringing phenomenon during the impedance matching process and ensure that the eye opening attenuation is ≤10%.

[0052] In this embodiment, the reflection waveform of the connector transmission path is collected in real time by a time domain reflectometer (TDR). measured The standard value Z of the protocol library protocol When the absolute value of the deviation is ≥ 2Ω, the impedance tolerance range of the corresponding protocol in the protocol library is adaptively updated.

[0053] This embodiment also includes a multi-level failure protection mechanism, which is provided with a real-time monitoring layer, a rapid response layer, and a system maintenance layer; The real-time monitoring layer includes the following steps: The local temperature data is collected in real time through the micro temperature sensor on the surface of the quantum dot layer (the size of the micro temperature sensor is ≤ 0.1 mm²), and based on the formula Calibrate the equivalent dielectric constant error; Real-time monitoring of quantum dot tunneling current. When the current suddenly exceeds the threshold by 20% within 1μs, bias cut-off protection is triggered; millisecond-level risk warning is provided to prevent thermal breakdown of quantum dots.

[0054] The rapid response layer includes the following steps: If three consecutive impedance matching operation timeouts are detected, and each timeout period is greater than 10μs, the impedance matching mode is immediately switched to the preset 100Ω default impedance; the sound and light alarm device is activated to output a three-level beep and red light flashing signal; The signal transmission path is switched from the main quantum dot array to the backup quantum dot array within 100ns through a micro-electromechanical switch; at the same time, an array switching completion instruction is sent to the protocol identification module to lock the current communication protocol parameters; hardware-level fault emergency response is achieved to ensure zero communication interruption.

[0055] The system maintenance layer includes the following steps: During the data transmission interval, a full impedance range scan of 70-130Ω is periodically performed to detect the impedance drift caused by quantum dot aging. Based on the magnitude and direction of the impedance drift, the compensation coefficient K2 in the impedance temperature mapping function is proportionally adjusted inversely. When the impedance drifts in the positive direction, the absolute value of the compensation coefficient K2 is reduced by a fixed ratio of 0.12; When the impedance drifts negatively, the absolute value of the compensation coefficient K2 is increased at a fixed ratio of 0.12; The adjustment amplitude is linearly proportional to the impedance drift, ensuring that the temperature drift compensation accuracy after aging remains within ±1.5Ω. Automatically compensates for aging drift to maintain lifetime accuracy.

[0056] The real-time monitoring layer and the rapid response layer achieve microsecond-level linkage through high-speed comparators and hardware timers (such as the TI TLV3202 comparator). The system maintenance layer automatically activates during communication intervals using the MCU's low-power mode (for example, the STM32G4's Stop 2 mode consumes less than 5μA).

[0057] Preferably, the closed-loop feedback control includes the following coordinated mechanisms: Core control layer: The fuzzy PID controller is used to dynamically adjust the proportional coefficient K according to the real-time impedance deviation ΔZ. p , where K p The value increases nonlinearly with the increase of |ΔZ|; When |ΔZ|>5Ω, the particle swarm optimization algorithm is used to accelerate convergence, with the initial particle positions set to the historically optimal matching parameters. This improves convergence speed by over 50% in large deviation scenarios. The core control layer is an ST STM32H7 series MCU (with integrated FPU and AI accelerator).

[0058] Prediction compensation layer: An integrated LSTM prediction module analyzes historical impedance data sequences to predict quantum dot aging trends and proactively compensate for the decay of the polarization coefficient α, reducing lifetime impedance fluctuations by 60%. The prediction and compensation layer utilizes an NVIDIA Jetson Nano edge computing module.

[0059] Real-time monitoring layer: Inverse calculation of the equivalent dielectric constant ε from the quantum dot tunneling current eff , replacing traditional time domain reflectometry measurements; eliminating TDR measurement delays and shortening response time to 200ns. The real-time monitoring layer uses the TI INA828 high-precision current sense amplifier.

[0060] Security protection layer: When the ambient temperature drops below -30°C or exceeds 100°C, a safety mode is activated, locking the bias output to the optimal static operating point of 1.5±0.1V, preventing quantum dot dielectric breakdown under extreme operating conditions. The safety protection layer is a combination of the ADIADT7420 temperature sensor and a voltage reference source.

[0061] Interference-resistant transport layer: Closed-loop control signals are transmitted via differential shielded microstrip lines, and the ground layer's integrated frequency-selective surface suppresses high-frequency crosstalk, improving the signal-to-noise ratio by 15dB or more. The anti-interference transmission layer is constructed of Rogers RO4350B high-frequency PCB material.

[0062] like Figure 2 As shown, another aspect further provides a connector for performing the above-mentioned method of adaptively matching impedance according to a protocol, comprising: The dielectric layer is composed of a modified polyimide matrix. The dielectric constant of the dielectric layer is 3.2, and the loss tangent is ≤0.002@10GHz. The dielectric layer is embedded with a quantum dot array through a laser-etched micro-pit array for high-speed signal transmission. The quantum dot array is embedded in the signal transmission path as a unit with adjustable dielectric constant, providing a low-loss signal transmission channel.

[0063] The protocol identification module detects the type of communication protocol being connected in real time and generates a protocol identification signal. This module implements basic identification functions for multi-protocol compatibility by detecting the type of communication protocol being connected to the interface in real time and generating an identification signal. The protocol identification module is a high-speed signal analysis chip, such as the Keysight M8040A series, Teledyne LeCroy Sierra M328, Xilinx Versal ACAP, or Intel Stratix 10 GX series.

[0064] Multi-protocol impedance database, stores the standard impedance value and impedance temperature mapping function of each communication protocol, and outputs the target impedance value Z according to the protocol identification signal target Specific communication protocol standards and impedance values ​​are: PCIe protocol, PCIe protocol impedance value: 85Ω, SAS protocol, SAS protocol impedance value: 90Ω, InfiniBand protocol, InfiniBand protocol impedance value: 100Ω. Store the protocol standard impedance value and temperature compensation function, and output the target impedance Z according to the protocol identifier. target The multi-protocol impedance database is embedded in non-volatile memory, such as Renesas MONOS process - TSMC 40nm eFlash IP or Everspin EM064LX - Samsung 28nm eMRAM.

[0065] The bias control circuit is connected to the quantum dot array and applies a bipolar bias voltage of 0V~+3V or -1V~0V to control the electron tunneling probability P of the quantum dots. t Applying bipolar bias voltage to control the tunneling probability P of quantum dot electrons t , realizing an electric control adjustment mechanism without mechanical contacts.

[0066] Dynamic tuning module, based on the electron tunneling probability P through the Al2O3 gradient barrier layer of the quantum dot array t Changing the equivalent dielectric constant ε eff , dynamically adjust the distributed capacitance value C to achieve impedance matching; breaking through the adjustment range limitations of traditional solutions.

[0067] The closed-loop feedback circuit uses a fuzzy PID controller (Proportional-Integral-Derivative Controller) to correct the bias voltage in real time according to the impedance deviation ΔZ to maintain Z target Fluctuation ≤ ±1.5Ω stability. Achieve impedance steady-state error control.

[0068] During operation, when the high-speed connector is connected to the PCIe protocol device, the protocol identification module detects the physical layer signal characteristics in real time and outputs the identification signal. The multi-protocol impedance database retrieves the target impedance value of 85Ω and the temperature compensation parameters accordingly. The bias control circuit applies an initial bipolar bias (such as +1.5V) to the quantum dot array, and adjusts the electron tunneling probability P t Changing the equivalent dielectric constant ε of the Al2O3 gradient barrier layer eff , so that the distributed capacitance of the dielectric layer changes dynamically to approach the target impedance Z target The fuzzy PID controller in the closed-loop feedback circuit continuously collects the actual impedance deviation ΔZ and corrects the bias voltage in real time (for example, adding 0.2V when ΔZ>1.5Ω). Ultimately, the impedance is stabilized to 85±1.5Ω within 20μs, completing hot-swap adaptive matching for the PCIe 5.0 / 6.0 protocol.

[0069] The above contents are only preferred embodiments of the present invention. For ordinary technicians in this field, according to the concept of the present invention, there may be changes in the specific implementation methods and application scopes. The contents of this specification should not be understood as limiting the present invention.

Claims

1. A method for adaptively matching impedance according to a protocol, characterized in that: The following steps are involved: A. Embed a quantum dot array in the dielectric layer of the connector signal transmission; B. Real-time detection of the communication protocol type connected to the connector and generation of a protocol identification signal; C. According to the protocol identification signal, the target impedance value Z is retrieved from the pre-stored multi-protocol impedance database. target ; D. Apply bias voltage to control the electron tunneling probability P of quantum dots t ; E. Based on the electron tunneling probability P t Changing the equivalent dielectric constant ε eff , dynamically adjust the distributed capacitance value C; F. Continuous impedance matching is achieved by correcting the bias voltage through closed-loop feedback.

2. The method for adaptively matching impedance according to a protocol according to claim 1, characterized in that: The quantum dot array is embedded in the signal transmission medium layer in a hexagonal close-packed structure; The surface of the quantum dots is modified with thiol molecules to form a coordination bonding layer, wherein the thiol molecules are oriented perpendicular to the dielectric layer, with an orientation deviation of ≤5°, and the direction of the molecular dipole moment is parallel to the electric field vector; The surface of quantum dots is coated with a barrier layer to form a periodic barrier structure to suppress the overlap of electron tunneling paths; The periodic barrier layer adopts a gradient doping process, and the thickness of the barrier layer increases from 2nm to 5nm along the signal transmission direction, with a step increment of 0.5nm / μm, to achieve linear regulation of the electron tunneling probability Pt; The quantum dot array is integrated with the bias control circuit of the flexible printed circuit through eutectic bonding.

3. A method for adaptively matching impedance according to a protocol according to claim 1 or 2, characterized in that: The quantum dot electron tunneling probability P is regulated by bias voltage. t In the steps, the control circuit performs phased voltage output: In the initial matching stage, when the impedance deviation is detected When the high-frequency pulse voltage with a frequency of >1MHz is output, the polarization direction of the quantum dots is quickly changed through the alternating electric field, accelerating the convergence of the tunneling probability. In the steady-state matching stage, when the impedance deviation When the voltage is 0–3 V, the DC bias is switched to maintain the stability of the polarization state of the quantum dots to achieve continuous impedance matching.

4. The method for adaptively matching impedance according to a protocol according to claim 1, characterized in that: The bias voltage is applied using a bipolar driving strategy, which includes: A forward bias control mechanism applies a forward bias of 0V to +3V to the quantum dot array via the bias control circuit of the flexible printed circuit when it is detected that the distributed capacitance value C needs to be increased; Negative bias control mechanism: when it is detected that the distributed capacitance value C needs to be reduced, a negative bias of -1V to 0V is applied to the quantum dot array through the bias control circuit of the flexible printed circuit.

5. The method for adaptively matching impedance according to a protocol according to claim 1, characterized in that: The multi-protocol impedance database stores the standard impedance value Z of each communication protocol Protocol , and construct the impedance temperature mapping function Z adjusted , impedance temperature mapping function , Among them, Z protocol The standard impedance value for the protocol includes 85Ω for PCIe protocol, 90Ω for SAS protocol, and 100Ω for InfiniBand protocol. ΔT is the real-time temperature of the connector T real and ambient reference temperature T base The difference between K1 is the protocol impedance weight coefficient, ranging from 0.95 to 1.05; K2 is the temperature compensation coefficient, and its value range is -0.15Ω / ℃~+0.15Ω / ℃; The impedance temperature mapping function Z adjusted The impedance weight coefficient K1 is used to correct the manufacturing tolerance of the equipment, and the temperature compensation coefficient K2 is used to linearly offset the impedance drift caused by the thermal expansion of the material, so that the actual impedance value of the connector is relative to the target impedance value Z within the operating temperature range of -40℃~125℃. target The deviation is ≤±1.5Ω, thereby ensuring the signal eye opening ≥0.7UI at a 56Gbps transmission rate.

6. The method for adaptively matching impedance according to a protocol according to claim 5, characterized in that: When two or more communication protocol identification signals are detected at the same time, the priority arbitration mechanism is started and the target impedance value Z is selected according to the preset protocol priority order of PCIe protocol>SAS protocol>InfiniBand protocol. target , driving the bipolar bias circuit for dynamic matching.

7. The method for adaptively matching impedance according to a protocol according to claim 5, characterized in that: When detecting an unknown communication protocol type, dynamic impedance matching of the unknown communication protocol type is achieved through the following steps: C1. Real-time acquisition of the time domain waveform of the unknown protocol transmission signal, and extraction of signal characteristic parameters based on eye diagram analysis, including eye height, eye width, and time jitter value; C2. According to the signal characteristic parameters, the optimal target impedance value Z is matched through the multi-protocol impedance database optimized ; C3. Generate a temporary impedance mapping entry, store the signal characteristic parameters and Z optimized the relationship between C4. When a protocol with the same signal characteristic parameters is detected later, Z is automatically called. optimized Drive bipolar bias circuit for impedance matching; At the moment of protocol switching, a transition pulse with a width of 5ns and an amplitude of 50% of the bias value corresponding to the target impedance is injected into the bias control circuit to suppress the signal ringing phenomenon during the impedance matching process and ensure that the eye opening attenuation is ≤10%.

8. The method for adaptively matching impedance according to a protocol according to claim 5, characterized in that: The reflection waveform of the connector transmission path is collected in real time by the time domain reflectometer. measured The standard value Z of the protocol library protocol When the absolute value of the deviation is ≥ 2Ω, the impedance tolerance range of the corresponding protocol in the protocol library is adaptively updated.

9. The method for adaptively matching impedance according to a protocol according to claim 5, characterized in that: It also includes a multi-level failure protection mechanism, which is equipped with a real-time monitoring layer, a rapid response layer, and a system maintenance layer; The real-time monitoring layer includes the following steps: The local temperature data is collected in real time by the micro temperature sensor on the surface of quantum dots, and based on the formula Calibrate the equivalent dielectric constant error; Real-time monitoring of quantum dot tunneling current. When the current suddenly exceeds the threshold by 20% within 1μs, the bias cut-off protection is triggered. The rapid response layer includes the following steps: If three consecutive impedance matching operation timeouts are detected, and each timeout period is greater than 10μs, the impedance matching mode is immediately switched to the preset 100Ω default impedance; the sound and light alarm device is activated to output a three-level beep and red light flashing signal; The signal transmission path is switched from the main quantum dot array to the backup quantum dot array within 100ns through a micro-electromechanical switch; at the same time, an array switching completion instruction is sent to the protocol recognition module to lock the current communication protocol parameters; The system maintenance layer includes the following steps: During the data transmission interval, a full impedance range scan of 70-130Ω is periodically performed to detect the impedance drift caused by quantum dot aging; according to the magnitude and direction of the impedance drift, the compensation coefficient K2 in the impedance temperature mapping function is proportionally and reversely adjusted; When the impedance drifts in the positive direction, the absolute value of the compensation coefficient K2 is reduced by a fixed ratio of 0.12; When the impedance drifts negatively, the absolute value of the compensation coefficient K2 is increased at a fixed ratio of 0.12; The adjustment amplitude is linearly related to the impedance drift, ensuring that the temperature drift compensation accuracy after aging is maintained within the range of ±1.5Ω.

10. A connector, used to perform the method for adaptively matching impedance according to a protocol according to any one of claims 1 to 9, characterized in that: include: The dielectric layer is composed of a modified polyimide matrix, and the dielectric layer is embedded with a quantum dot array through a laser-etched micro-pit array for high-speed signal transmission; The protocol identification module detects the type of communication protocol being accessed in real time and generates a protocol identification signal; Multi-protocol impedance database, which stores the standard impedance value and impedance temperature mapping function of each communication protocol, and outputs the target impedance value Z according to the protocol identification signal target ; The bias control circuit is connected to the quantum dot array and applies a bipolar bias voltage of 0V~+3V or -1V~0V to control the electron tunneling probability P of the quantum dots. t ; Dynamic tuning module, based on the electron tunneling probability P through the Al2O3 gradient barrier layer of the quantum dot array t Changing the equivalent dielectric constant ε eff , dynamically adjust the distributed capacitance value C to achieve impedance matching; The closed-loop feedback circuit uses a fuzzy PID controller to correct the bias voltage in real time according to the impedance deviation ΔZ to maintain Z target Stability of fluctuation ≤±1.5Ω.

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