Substrate processing apparatus and method of manufacturing semiconductor device

Abstract

The invention provides a substrate processing apparatus and a method of manufacturing a semiconductor device. The substrate processing apparatus uniformly supplies processing gas to a substrate. The present invention is provided with: a processing chamber having a vent hole in the side of a plurality of substrates accommodated therein; a first nozzle that is provided at a position facing the exhaust hole and supplies a processing gas for processing the substrate to the processing chamber; and a second nozzle configured so as to have a plurality of first injection holes and one or more second injection holes formed therein, the plurality of first injection holes opening upstream of the gas flow from the first nozzle toward the exhaust hole, the plurality of first injection holes corresponding to the plurality of substrates, respectively, and the one or more second injection holes opening downstream of the gas flow from the first nozzle toward the exhaust hole, and the one or more second injection holes opening downstream of the gas flow from the first nozzle toward the exhaust hole. The one or more second injection holes correspond to some of the plurality of substrates and open to the downstream of the gas flow from the first nozzle to the exhaust hole, and the inert gas supplied from at least one of the first injection holes and the second injection holes and the processing gas are mixed at the peripheral edges of the plurality of substrates.

Description

Technical Field

[0001] The present invention relates to a substrate processing device and a method for manufacturing a semiconductor device. Background Art

[0002] As one of the steps in the manufacturing process of semiconductor devices, a substrate processing step is sometimes performed, in which a process gas (e.g., a raw material gas, a reaction gas, etc.) is supplied to a substrate at a controlled flow rate to form a film on the substrate (see, for example, Patent Documents 1 to 3). In this case, for some reason, the process gas may not be supplied evenly to the substrate, making it difficult to evenly form a film on the substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Publication No. 2023-080147

[0006] Patent Document 2: Japanese Patent Publication No. 2014-067783

[0007] Patent Document 3: Japanese Patent Publication No. 2012-146939 Summary of the Invention

[0008] The present invention provides a technology for evenly supplying a processing gas onto a substrate.

[0009] According to one aspect of the present invention, a technique is provided, comprising:

[0010] A processing chamber having exhaust holes on the sides of the plurality of substrates accommodated therein;

[0011] a first nozzle disposed at a position opposite to the exhaust hole and supplying a processing gas for processing the substrate into the processing chamber; and

[0012] The second nozzle is formed with a plurality of first injection holes and one or more second injection holes, and is configured to supply an inert gas to the processing chamber, wherein the plurality of first injection holes are respectively opened upstream of a flow of gas from the first nozzle toward the exhaust hole corresponding to the plurality of substrates, and the one or more second injection holes are opened downstream of a flow of gas from the first nozzle toward the exhaust hole corresponding to some of the plurality of substrates.

[0013] The inert gas and the processing gas supplied from at least one of the first injection hole and the second injection hole are mixed at the peripheral portions of the plurality of substrates.

[0014] Effects of the Invention

[0015] According to the present invention, the processing gas can be uniformly supplied onto the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a schematic diagram of the structure of a substrate processing apparatus preferably used in one embodiment of the present invention, showing a processing furnace portion in a longitudinal sectional view.

[0017] Figure 2 It is the use of Figure 1 The AA line cross-sectional view is a diagram showing a portion of a processing furnace of a substrate processing apparatus preferably used in one embodiment of the present invention.

[0018] Figure 3 This is a schematic configuration diagram of a controller of a substrate processing apparatus preferably used in one embodiment of the present invention, and is a diagram showing a control system of the controller using a block diagram.

[0019] Figure 4 This is a diagram showing a film forming sequence of a substrate processing apparatus preferably used in one embodiment of the present invention.

[0020] Figure 5 This is a diagram for explaining the arrangement angles of a processing nozzle and a convection nozzle of a substrate processing apparatus preferably used in one embodiment of the present invention.

[0021] Figure 6A This is a diagram for explaining the angle formed between the first injection hole and the second injection hole of the convection nozzle of the present invention.

[0022] Figure 6B This is a diagram for explaining the angle formed between the first injection hole and the second injection hole of the convection nozzle of the present invention.

[0023] Figure 7A This is a diagram illustrating the relationship between a dummy area, a product area, and first and second injection holes within a processing chamber of a substrate processing apparatus preferably used in one embodiment of the present invention.

[0024] Figure 7B This is a diagram illustrating gas ejection in the product area.

[0025] Figure 7C It is a diagram explaining the gas ejection in the dummy area.

[0026] Figure 8A This is a diagram illustrating the flow of gas in a dummy region of a substrate processing apparatus that is preferably used in one embodiment of the present invention.

[0027] Figure 8B 1 and 2 are diagrams illustrating the flow of gas in the dummy region of the substrate processing apparatus according to Comparative Example 1.

[0028] Figure 8C 1 and 2 are diagrams illustrating the flow of gas in the dummy region of the substrate processing apparatus according to Comparative Example 2.

[0029] Figure 9A The diagram is a diagram illustrating angles between the first injection hole and the second injection hole in the second protruding portion of the substrate processing apparatus preferably used in one embodiment of the present invention.

[0030] Figure 9B This is a diagram illustrating angles between the first injection hole and the second injection hole in the third protrusion of the substrate processing apparatus preferably used in one embodiment of the present invention.

[0031] Description of Reference Numerals

[0032] 200: chip (substrate), 201: processing chamber, 249a: nozzle (1st nozzle), 249b: nozzle (1st nozzle), 249c: nozzle (2nd nozzle), 249d: nozzle (2nd nozzle), 250c1: 1st injection hole, 250d1: 1st injection hole, 250c2: 2nd injection hole, 250d2: 2nd injection hole. DETAILED DESCRIPTION

[0033] Below, refer to Figure 1 FIG9 illustrates one embodiment of the present invention. The drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings do not necessarily correspond to reality. Furthermore, the dimensional relationships and ratios of the elements shown in the drawings do not necessarily correspond to reality.

[0034] (1) Configuration of substrate processing apparatus

[0035] like Figure 1 and Figure 2 As shown, substrate processing apparatus 202 includes a heater 207 as a heating unit (heating mechanism). Heater 207 is cylindrical and is vertically mounted by being supported by a holding plate. Heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) gas using heat.

[0036] Inside heater 207, a reaction tube 203, serving as an inner tube, is arranged concentrically with heater 207. Reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and has a cylindrical shape with a closed top and an open bottom. Below reaction tube 203, a manifold 209 is arranged concentrically with reaction tube 203. Manifold 209 is made of a metal such as a nickel alloy and has a short cylindrical shape with open top and bottom ends. The upper end of manifold 209 engages with the lower end of reaction tube 203, supporting reaction tube 203. An O-ring 220a is provided between manifold 209 and reaction tube 203 as a sealing member. Reaction tube 203 is mounted vertically, similar to heater 207. The reaction tube 203 and manifold 209 primarily constitute a processing vessel (reaction container). Within the processing container, a processing chamber 201 is formed. The processing chamber 201 is configured to accommodate a wafer 200 serving as a substrate.

[0037] In the processing chamber 201, nozzles 249a and 249b are provided as first nozzles to supply film-forming gas (processing gas) so as to penetrate the side wall of the manifold 209. Nozzles 249c and 249d are provided as second nozzles to supply inert gas so as to penetrate the side wall of the manifold 209. Gas supply pipes 232a to 232d are connected to the nozzles 249a to 249d, respectively.

[0038] Nozzles 249a and 249b serve as process gas nozzles for supplying film-forming gas (process gas) to the process chamber 201. Furthermore, nozzles 249c and 249d serve as inert gas nozzles for supplying inert gas to the process chamber 201. Nozzles 249c and 249d each serve as a counternozzle for supplying only inert gas from a system other than the film-forming gas. Two counternozzles are provided in the process chamber 201. Each counternozzle is separated from the process gas nozzle by a predetermined distance in the circumferential direction of the wafer 200.

[0039] Gas supply pipes 232a to 232d are equipped, in order from the upstream side of the gas flow, with mass flow controllers (MFCs) 241a to 241d, serving as flow controllers (flow control units), and valves 243a to 243d, serving as on-off valves. Downstream of valves 243a and 243b, gas supply pipes 232e and 232f, respectively, for supplying inert gas, are connected to gas supply pipes 232a and 232b. MFCs 241e and 241f, and valves 243e and 243f, respectively, are equipped, in order from the upstream side of the gas flow.

[0040] The reaction tube 203 is formed with a first protrusion 302, which protrudes outward from the processing chamber 201 to accommodate the nozzles 249a and 249b and serves as a first nozzle chamber; a second protrusion 303, which protrudes outward from the processing chamber 201 to accommodate the nozzle 249c and serves as a second nozzle chamber; and a third protrusion 304, which protrudes outward from the processing chamber 201 to accommodate the nozzle 249d and serves as a second nozzle chamber. The first protrusion 302 may be divided into a plurality of sections, each of which accommodates the nozzles 249a and 249b.

[0041] The first protrusion 302 is formed at a position facing the exhaust hole 233. The second protrusion 303 and the third protrusion 304 are each formed at a position separated from the first protrusion 302 by a predetermined distance in the circumferential direction of the reaction tube 203. Here, the predetermined distance is a distance of an arc within a range of 15° to 120° relative to the first protrusion 302 in the circumferential direction of the reaction tube 203 (see Figure 5 In other words, the angle θ formed between the straight line connecting the center of the first protrusion 302 of the reaction tube 203 and the center of the wafer 200 and the straight line connecting the center of each of the second protrusion 303 and the third protrusion 304 and the center of the wafer 200 is within a range of 15° to 120°. That is, with respect to the nozzles 249c and 249d, the angle θ formed between the straight line connecting the center of the nozzles 249a and 249b and the center of the wafer 200 and the straight line connecting the center of each of the nozzles 249c and 249d and the center of the wafer 200 is within a range of 15° to 120°.

[0042] exist Figure 2 In the illustrated example, the second protrusion 303 and the third protrusion 304 are each formed at a position spaced 30° apart from the first protrusion 302 in the circumferential direction of the reaction tube 203 .

[0043] The first protrusion 302 forms a portion of the processing chamber 201 and is configured to accommodate the nozzles 249a and 249b. The second protrusion 303 forms a portion of the processing chamber 201 and is configured to accommodate the nozzle 249c. The third protrusion 304 forms a portion of the processing chamber 201 and is configured to accommodate the nozzle 249d.

[0044] The nozzle 249a and the nozzle 249b are each provided in the first protrusion 302 from the bottom to the top of the reaction tube 203 along the arrangement direction of the wafers 200. The nozzle 249a and the nozzle 249b are arranged adjacent to each other in the first protrusion 302. The nozzles 249a and 249b are arranged to face the exhaust hole 233 described later across the center of the wafer 200 loaded into the processing chamber 201.

[0045] like Figure 2As shown, nozzle 249c and nozzle 249d are respectively arranged in the second protrusion 303 and the third protrusion 304 from the bottom to the top of the reaction tube 203 along the arrangement direction of the wafers 200. As described above, nozzle 249c and nozzle 249d are arranged at positions that are 15° to 120° with respect to the straight line connecting the center of the process gas nozzles (nozzles 249a, 249b) and the center of the wafer in the circumferential direction of the wafer 200.

[0046] If the angle is less than 15°, the angle between the inert gas flow from the first injection holes 250c1 and 250d1 and the process gas flow from the nozzles 249a and 249b is shallow, and the process gas flow may not be sufficiently pressed toward the center of the wafer 200 (to form the same flow as the process gas). If the angle exceeds 120°, the distance between the first injection holes 250c1 and 250d1 and the nozzles 249a and 249b is large, and the dilution effect at the edge of the wafer 200 achieved by the first injection holes 250c1 and 250d1 may be reduced. Furthermore, the inert gas from the second injection holes 250c2 and 250d2 may flow directly into the exhaust hole 233, hindering the smooth exhaust of the process gas and causing the pressure to increase, resulting in an increase in the film thickness at the edge of the wafer 200.

[0047] If the angle is 120° or less, the effect of exhaust from the exhaust hole 233 on the second injection holes 250c2 and 250d2 described later is reduced, and the convection effect achieved by the first injection holes 250c1 and 250d1 and the second injection holes 250c2 and 250d2 described later can be exerted.

[0048] Furthermore, the 90° point is the location with the largest horizontal flow path area in the processing chamber 201. Therefore, it is believed that if the angle is set below 90°, the effect of exhaust by the exhaust hole 233 will almost disappear. Therefore, nozzles 249c and 249d are preferably located such that the angle θ formed by the straight line connecting the center of the processing gas nozzles (nozzles 249a and 249b) and the center of the wafer 200 and the straight line connecting the center of each nozzle 249c and nozzle 249d and the center of the wafer 200 is 15° or more and 90° or less.

[0049] Furthermore, nozzles 249c and 249d are preferably positioned at both ends of nozzles 249a and 249b. Specifically, nozzles 249c and 249d are preferably positioned such that the angle θ formed between a line connecting the center of the process gas nozzles (nozzles 249a and 249b) and the center of wafer 200 and a line connecting the center of each nozzle 249c and nozzle 249d and the center of wafer 200 is not less than 15° and not more than 45°. This allows for the convection effect on wafer 200 achieved by first injection holes 250c1 and 250d1 and second injection holes 250c2 and 250d2, described later, to be exerted, suppressing backflow of process gas supplied from the process gas nozzles and directing the process gas flow toward exhaust hole 233. Furthermore, smooth process gas flow on wafer 200 is achieved.

[0050] Furthermore, nozzles 249c and 249d are arranged line-symmetrically with respect to a straight line connecting the center of the process gas nozzle and the center of exhaust port 233. Specifically, nozzle 249d is located in an area on the opposite side of the area where nozzle 249c is located, within an area defined by a line connecting the center of the process gas nozzle and the center of exhaust port 233. Here, the center of the process gas nozzle refers to the center of nozzle 249a, the center of nozzle 249b, or a midpoint between the centers of nozzles 249a and 249b.

[0051] A plurality of gas supply holes 250a are formed in a row in the nozzle 249a, and a plurality of gas supply holes 250b are formed in a row in the nozzle 249b. The gas supply holes 250a and 250b are each capable of supplying gas toward the center of the wafer 200. Multiple gas supply holes 250a and 250b are provided from the bottom to the top of the reaction tube 203, opening toward the center of each wafer 200. In other words, the gas supply holes 250a and 250b are opened so as to eject gas toward the center of the wafer 200. The gas supplied from the gas supply holes 250a and 250b passes through the wafer 200 and is directed toward the exhaust port 233.

[0052] like Figure 6A As shown, the nozzle 249c has a plurality of first injection holes 250c1 arranged in a row at positions corresponding to the plurality of wafers 200. Furthermore, the nozzle 249c has a plurality of second injection holes 250c2 arranged in a row at positions corresponding to portions of the wafers 200 in the axial direction (the direction in which the wafers 200 are arranged).

[0053] The nozzle 249d has a plurality of first injection holes 250d1 arranged in a row at positions corresponding to the plurality of wafers 200. Furthermore, the nozzle 249d has a plurality of second injection holes 250d2 arranged in a row at positions corresponding to portions of the wafers 200 in the axial direction (the direction in which the wafers 200 are arranged).

[0054] In this embodiment, as an example, Figure 7A As shown, dummy regions DM are formed at both ends (the topmost and bottommost sides) in the wafer 200 arrangement direction Z, where dummy wafers 200 are placed. A product region PD is formed between the dummy regions DM, where product wafers 200 are placed. First injection holes 250c1 and 250d1 are formed at positions corresponding to the dummy regions DM and the product region PD, while second injection holes 250c2 and 250d2 are formed at positions corresponding to the dummy regions DM. In other words, the second injection holes 250c2 and 250d2 are provided to correspond to one or more wafers 200 arranged at the top and one or more wafers 200 arranged at the bottom, among the plurality of wafers 200. Furthermore, the second injection holes 250c2 and 250d2 are arranged so as to sandwich a product wafer 200 among the plurality of wafers 200.

[0055] The first injection holes 250c1, 250d1 and the second injection holes 250c2, 250d2 are arranged at the same position (height) in the arrangement direction of the plurality of wafers 200. Furthermore, the first injection holes 250c1, 250d1 and the second injection holes 250c2, 250d2 are provided corresponding to the same wafer 200 in the arrangement direction of the plurality of wafers 200.

[0056] The first injection holes 250c1 and 250d1 open upstream of the gas flow from the gas supply holes 250a and 250b toward the exhaust hole 233, that is, toward the nozzles 249a and 249b. Furthermore, the second injection holes 250c2 and 250d2 open downstream of the gas flow from the gas supply holes 250a and 250b toward the exhaust hole 233, that is, toward the exhaust hole 233. The airflows from the gas supply holes 250a and 250b are denoted as GA and GB, the airflow from the first injection holes 250c1 and 250d1 as airflow G1, and the airflow from the second injection holes 250c2 and 250d2 as airflow G2.

[0057] The upstream portion of the gas flow from the gas supply holes 250a and 250b toward the exhaust hole 233 refers to the upstream half of the straight path from the gas supply holes 250a and 250b to the exhaust hole 233. Furthermore, the downstream portion of the gas flow from the gas supply holes 250a and 250b toward the exhaust hole 233 refers to the downstream half of the straight path from the gas supply holes 250a and 250b to the exhaust hole 233.

[0058] like Figure 7B As shown, in the product area PD, the gas flow G1 from the first injection holes 250c1 and the first injection holes 250d1 in the nozzles 249c and 249d is ejected upstream to the gas flows GA and GB from the gas supply holes 250a and the gas supply holes 250b along the inner wall of the processing chamber 201. Figure 7C As shown, in the dummy area DM and the monitoring area MT, the airflow G1 is ejected toward the upstream airflow GA, GB, and the airflow G2 from the second injection holes 250c2 and the second injection holes 250d2 is ejected toward the downstream airflow GA, GB. Figure 8A As shown, after being pushed into the inner side of the wafer 200 by the airflow G1, the airflows GA and GB are directed toward the outer periphery of the wafer 200, but are oriented by the airflow G2 so as to pass again inside the edge of the wafer 200 and toward the exhaust hole 233.

[0059] On the other hand, as Comparative Example 1, consider a case where two nozzles N1 to N4 are provided on one side at intervals from the gas supply holes 250a and 250b, and inert gas is sprayed toward the center of the wafer 200. Figure 8B As shown in FIG. 1 , after being pushed into the inner side of the wafer 200 by the airflow G1, the airflows GA and GB return toward the outer periphery of the wafer 200 and toward the peripheral edge of the wafer 200. This easily causes diffusion from a position outside the peripheral edge of the dummy wafer 200 to the product area PD. Figure 8C As shown, consider the case where the second injection holes 250c2 and 250d2 are not provided. The inert gas G1 from the first injection holes 250c1 and 250d1 mixes with the airflows GA and GB. However, the airflows GA and GB flow back toward the outer edge of the dummy wafer 200, which tends to cause diffusion from outside the peripheral edge of the dummy wafer 200 to the product area PD.

[0060] The inactive gas ejected from the first injection holes 250c1 and 250d1 of the nozzles 249c and 249d, which correspond to portions where the second injection holes 250c2 and 250d2 are not provided, forms a vortex near the peripheral edge of the corresponding wafer 200. Specifically, the inactive gas is ejected in the direction toward which the gas supply holes 250a and 250b and the first injection holes 250c1 and 250d1 are directed, and drawn in around these directions, thereby generating a vortex.

[0061] In addition, the structure is such that the inactive gas injected from the first injection holes 250c1 and 250d1 corresponding to the parts of the nozzles 249c and 249d where the second injection holes 250c2 and 250d2 are not provided is supplied at a flow rate that is greater than a specified value so as to maintain the in-plane uniformity (convexity) of the film formed on the corresponding chip 200.

[0062] like Figure 9A As shown, the angle α1 formed by the injection direction of the first injection hole 250c1 and the injection direction of the second injection hole 250c2 corresponds to the angle of both ends of the opening of the second protrusion 303 viewed from the center of the nozzle 249c. Figure 9B As shown, the angle α2 formed between the injection direction of the first injection hole 250d1 and the injection direction of the second injection hole 250d2 corresponds to the angle when the two ends of the opening of the third protrusion 304 are viewed from the center of the nozzle 249d. Furthermore, the angle α1 is the angle formed by the straight line connecting the center of the nozzle 249c and the center of the first injection hole 250c1, and the straight line connecting the center of the nozzle 249c and the center of the second injection hole 250c2. Furthermore, the angle α2 is the angle formed by the straight line connecting the center of the nozzle 249d and the center of the first injection hole 250d1, and the straight line connecting the center of the nozzle 249d and the center of the second injection hole 250d2.

[0063] Figure 9A The angle α1′ is larger than the angle when both ends of the opening of the second protrusion 303 are viewed from the center of the nozzle 249c. Figure 9B The angle α2′ is larger than the angle when both ends of the opening of the third protrusion 304 are viewed from the center of the nozzle 249d.

[0064] The angle α1 formed by the injection direction of the first injection hole 250c1 and the injection direction of the second injection hole 250c2, and the angle α2 formed by the injection direction of the first injection hole 250d1 and the injection direction of the second injection hole 250d2 are preferably not less than 60° and not more than 120°. If the angle is less than 60°, the distance between the first injection hole 250c1 and the second injection hole 250c2, and the distance between the first injection hole 250d1 and the second injection hole 250d2 are close, and there is a possibility that the inert gas will not be widely diluted at the edge of the wafer 200. If the angle exceeds 120°, the inert gas may hit the wall surfaces of the second protrusion 303 and the third protrusion 304, and there is a possibility that it will not be widely diluted. In addition, a large amount of inert gas may flow into the gap between the wafer 200 and the reaction tube 203, and the dilution effect at the edge of the wafer 200 may be reduced.

[0065] A source gas (processing gas) GA is supplied from the gas supply pipe 232 a to the processing chamber 201 via the MFC 241 a , the valve 243 a , and the nozzle 249 a .

[0066] A gas GB serving as a process gas and serving as a reactant (reactant) having a chemical structure (molecular structure) different from that of the raw material is supplied from the gas supply pipe 232b to the process chamber 201 via the MFC 241b, the valve 243b, and the nozzle 249b.

[0067] Inert gas is supplied from gas supply pipes 232c to 232f via MFCs 241c to 241f, valves 243c to 243f, gas supply pipes 232c, 232d, 232a, and 232b, and nozzles 249c, 249d, 249a, and 249b, respectively, into the processing chamber 201. The inert gas functions as a purge gas and a carrier gas, and also as a film thickness distribution control gas for controlling the in-plane film thickness distribution of the film formed on the wafer 200.

[0068] The processing gas supply system mainly comprises the gas supply pipes 232a, 232b, MFCs 241a, 241b, and valves 243a, 243b, while the inert gas supply system mainly comprises the gas supply pipes 232c to 232f, MFCs 241c to 241f, and valves 243c to 243f.

[0069] The reaction tube 203 is provided with an exhaust hole 233 as an exhaust part for exhausting the atmosphere of the processing chamber 201. Figure 2As shown in the horizontal cross-section, the exhaust hole 233 is provided at a position opposite (facing) the nozzles 249a, 249b (gas supply holes 250a, 250b) across the wafer 200. An exhaust pipe 231 is connected to the exhaust hole 233. The exhaust pipe 231 is equipped with a pressure sensor 245 as a pressure detector for detecting the pressure of the processing chamber 201. It is also connected to a vacuum pump (vacuum exhaust device) 246 via an APC (Auto Pressure Controller) valve 244 as a pressure regulator. The APC valve 244 is configured to enable vacuum exhaust and stop of the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is in operation. In addition, the pressure of the processing chamber 201 can be adjusted by adjusting the opening based on the pressure information detected by the pressure sensor 245 while the vacuum pump 246 is in operation. The exhaust system mainly comprises the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may also be included in the exhaust system.

[0070] A sealing cap 219 is provided below the manifold 209, serving as a cover that hermetically seals the lower opening of the manifold 209. The cap 219 is, for example, made of metal and formed in a disc shape. An O-ring 220b, serving as a sealing member and contacting the lower end of the manifold 209, is provided on the upper surface of the cap 219. A rotating mechanism 267 is provided below the cap 219 to rotate the boat 217, described later. A rotating shaft 255 of the rotating mechanism 267 passes through the cap 219 and is connected to the boat 217. The rotating mechanism 267 rotates the boat 217, thereby rotating the wafers 200.

[0071] The lid 219 is configured to be raised and lowered vertically by a boat elevator 115, a lifting mechanism, located outside the reaction tube 203. The lifting mechanism 115 serves as a transport device (transport mechanism) that moves the lid 219 in and out of the processing chamber 201. Furthermore, a gate 221, serving as a furnace cover, is located below or to the side of the manifold 209. This gate 221, while the lid 219 is lowered to completely remove the boat 217 from the processing chamber 201, airtightly seals the lower opening of the manifold 209. Like the lid 219, the gate 221 is disc-shaped, with an O-ring 220c disposed on its upper surface to abut the lower end of the manifold 209. The opening and closing movements (lifting and rotation, etc.) of the gate 221 are controlled by a gate opening and closing mechanism 222.

[0072] The substrate support boat 217 is configured to support multiple wafers 200, for example, 25 to 200, arranged in a horizontal position with their centers aligned vertically, in multiple layers. The boat 217 is made of a heat-resistant material such as quartz or SiC. Heat shields 218, also made of a heat-resistant material such as quartz or SiC, are supported in multiple layers at the bottom of the boat 217.

[0073] A temperature sensor 263 is provided within the reaction tube 203 as a temperature detector. By adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature of the processing chamber 201 is adjusted to a desired temperature distribution. The temperature sensor 263 is provided along the inner wall of the reaction tube 203.

[0074] like Figure 3 As shown, the controller 121, which serves as a control unit (control unit), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, such as a touch panel, is connected to the controller 121.

[0075] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), etc. A control program for controlling the operation of the substrate processing device, a process recipe that records the order and conditions of the substrate processing described later, etc. are stored in a readable manner in the storage device 121c. The process recipe is composed in a manner that enables the controller 121 to execute each step in the substrate processing described later and obtain a specified result, and functions as a program. Hereinafter, process recipes and control programs, etc. are collectively referred to as programs. In addition, process recipes are also referred to as recipes only. When the term program is used in this specification, there are cases where only one side of the recipe is included, only one side of the control program is included, or both sides are included. RAM121b is configured as a storage area (work area) for temporarily holding programs, data, etc. read by CPU121a.

[0076] The I / O port 121d is connected to the above-mentioned MFCs 241a to 241f, valves 243a to 243f, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotation mechanism 267, lifting mechanism 115, gate opening and closing mechanism 222, and the like.

[0077] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c based on input of an operation command from the input / output device 122. The CPU 121a is configured to control, in accordance with the contents of the read recipe, flow rate adjustment operations of various gases by the MFCs 241a to 241f, opening and closing operations of the valves 243a to 243f, opening and closing operations of the APC valve 244, pressure adjustment operations by the APC valve 244 by the pressure sensor 245, starting and stopping of the vacuum pump 246, temperature adjustment operations of the heater 207 by the temperature sensor 263, rotation and rotation speed adjustment operations of the boat 217 by the rotation mechanism 267, lifting and lowering operations of the boat 217 by the lifting mechanism 115, and opening and closing operations of the gate 221 by the gate opening and closing mechanism 222.

[0078] The controller 121 can be configured by installing the above-mentioned program stored in an external storage device (e.g., a magnetic disk such as a hard disk, an optical disk such as a CD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 123 into a computer. The storage device 121c and the external storage device 123 constitute a computer-readable recording medium. Hereinafter, they will be collectively referred to as recording media. When the term recording medium is used in this specification, there are cases where only the storage device 121c is included, cases where only the external storage device 123 is included, or cases where both are included. In addition, the provision of the program to the computer can also be carried out using communication means such as the Internet or a dedicated line instead of the external storage device 123.

[0079] (2) Film forming treatment

[0080] Regarding an example of a process for forming a film (referred to as an AB film) on a wafer 200 as a substrate using the substrate processing apparatus as one of the steps in the manufacturing process of a semiconductor device, Figure 4 In the following description, the operations of the various components constituting the substrate processing apparatus are controlled by the controller 121 .

[0081] Figure 4 The film formation sequence shown forms a film including A and B (herein referred to as an AB film), that is, an AB film, on the chip 200 by performing the following cycle n times (n is an integer greater than 1 and a prescribed number), and the cycle non-simultaneously performs step A of forming the first layer by supplying gas GA as a processing gas to the chip 200 from the nozzle 249a, and step B of forming the AB layer as the second layer by supplying gas GB as a processing gas to the chip 200 from the nozzle 249b.

[0082] In this specification, when the term "wafer" is used, it may refer to the wafer itself or a laminated body of the wafer and a predetermined layer or film formed on its surface. In this specification, when the term "wafer surface" is used, it may refer to the surface of the wafer itself or the surface of a predetermined layer, etc. formed on the wafer. In this specification, "substrate" includes the meaning of "wafer".

[0083] (Wafer loading and boat loading)

[0084] When a plurality of wafers 200 are loaded into the boat 217 (wafer loading), the gate 221 is moved by the gate opening and closing mechanism 222 to open the lower end of the manifold 209. Figure 1 As shown, the boat 217 supporting the plurality of wafers 200 is lifted by the lifting mechanism 115 and carried (boat loading) into the processing chamber 201. At this time, the lid 219 seals the lower end of the manifold 209 via the O-ring 220b.

[0085] (Pressure adjustment and temperature adjustment)

[0086] The processing chamber 201 is evacuated by a vacuum pump 246 to achieve the desired pressure in the processing chamber 201, i.e., the space containing the wafer 200. The pressure in the processing chamber 201 is measured by a pressure sensor 245, and feedback control of the APC valve 244 is performed based on this measured pressure information. Furthermore, the wafer 200 in the processing chamber 201 is heated by the heater 207 to achieve the desired film formation temperature. At this time, the power supply to the heater 207 is feedback controlled based on the temperature information detected by the temperature sensor 263 to achieve the desired temperature distribution in the processing chamber 201. Furthermore, rotation of the wafer 200 by the rotation mechanism 267 is initiated. The evacuation of the processing chamber 201 and the heating and rotation of the wafer 200 continue at least until the processing of the wafer 200 is completed.

[0087] (Film Formation Step)

[0088] After that, execute the following steps A and B in sequence.

[0089] [Step A]

[0090] In this step, gas GA is supplied to wafer 200 in processing chamber 201 .

[0091] Specifically, valve 243a is opened to allow gas GA to flow into gas supply pipe 232a. The flow rate of gas GA is adjusted by MFC 241a, supplied to processing chamber 201 via nozzle 249a, and exhausted from exhaust port 233. In other words, gas GA is supplied to wafer 200. At this time, valve 243e may also be opened to allow inert gas to flow into gas supply pipe 232e. The flow rate of inert gas may be adjusted by MFC 241e, supplied to processing chamber 201 along with gas GA via nozzle 249a, and exhausted from exhaust port 233. Furthermore, in step A, while gas GA is being supplied to processing chamber 201 via nozzle 249a, inert gas is supplied to processing chamber 201 via nozzles 249c and 249d, respectively. Details of this will be described later.

[0092] In step A, the flow rate of the inert gas injected from the first injection holes 250c1, 250d1 in the portion of the first injection holes 250c1, 250d1 where the corresponding second injection holes 250c2, 250d2 are not provided is adjusted so as to generate a vortex around the periphery of the corresponding wafer 200. This vortex improves the in-plane uniformity of the film formed on the wafer 200.

[0093] For example, if the flow rate of the inert gas supplied from the first injection holes 250c1 and 250d1 is too low relative to that of the gas GA, the inert gas supplied from the first injection holes 250c1 and 250d1 may become inferior to the gas GA. In other words, the source gas flowing in the gap G region is not diluted and flows downstream, reducing the total amount of source gas reaching the center of the wafer 200. This can result in a concave film thickness distribution of the film formed on the wafer 200, deteriorating the in-plane film thickness uniformity.

[0094] Furthermore, if the flow rate of the inert gas supplied from the first injection holes 250c1 and 250d1 is too high relative to the flow rate of the gas GA, the inert gas supplied from the first injection holes 250c1 and 250d1 will have a greater dilution effect on the source gas flowing through the gap G, potentially causing an excessive increase in the total amount of source gas reaching the center of the wafer. This can result in a convex film thickness distribution of the film formed on the wafer 200, deteriorating the in-plane film thickness uniformity.

[0095] These flow conditions vary depending on the surface area of ​​the chip 200, the chip spacing, the width of the gap G between the reaction tube 203 and the chip 200, the position of the nozzles 249c and 249d, the direction of the first injection holes 250c1 and 250d1 of the nozzles 249c and 249d, the gas type, the film forming temperature, the processing pressure, etc.

[0096] Here, in the dummy area DM, the consumption of gas GA is less than that in the product area PD. In the product area PD near the boundary with the dummy area DM, there is a case where the excess gas in the dummy area DM diffuses into the product area PD. Specifically, near the dummy area DM, there is a case where the thickness of the film formed on the wafer 200 in the product area PD is thicker than that of the wafer 200 in other product areas PD. In this embodiment, as shown in FIG. 7, Figure 8A As shown, in the peripheral portion A of the dummy wafer 200 in the dummy region DM, the inert gas G1 from the first injection holes 250c1 and 250d1 mixes with the gases GA and GB. The gases GA and GB then flow back toward the outer edge of the dummy wafer 200 and mix with the inert gas G2 from the second injection holes 250c2 and 250d2 at the peripheral portion B. The gases GA and GB are then directed toward the exhaust holes 233. This prevents the gases GA and GB from diffusing from the peripheral portion of the dummy wafer 200 into the product region PD.

[0097] In step A, while gas GA is being supplied from nozzle 249a, valves 243c-243f are opened to allow inert gas to flow into gas supply pipes 232c, 232d, and 232b, thereby supplying inert gas from nozzles 249c, 249d, and 249b into processing chamber 201. Maintaining a small amount of inert gas supply from nozzle 249b is not essential, but is preferred to prevent intrusion of gas GA into nozzle 249b. For this purpose, the supply of inert gas from nozzle 249b is preferably initiated simultaneously with or before step A.

[0098] As described above, by supplying the gas GA and the inert gas to the wafer 200 , the first layer is formed on the outermost surface of the wafer 200 .

[0099] After the first layer is formed, valve 243a is closed to stop the supply of gas GA. At this time, APC valve 244 remains open, and vacuum pump 246 is used to evacuate the processing chamber 201, removing any remaining unreacted gas GA or gas GA that has participated in the formation of the first layer from the processing chamber 201. The inert gas supplied from nozzles 249a to 249d acts as a purge gas, thereby purging the processing chamber 201 (purge step).

[0100] [Step B]

[0101] After step A is completed, gas GB is supplied to wafer 200 in processing chamber 201 , that is, to the first layer formed on wafer 200 .

[0102] In this step, the opening and closing of valves 243b, 243c, and 243f are controlled in the same manner as the opening and closing of valves 243a, 243c, and 243f in step A. Gas GB is supplied to the processing chamber 201 through nozzle 249b at a flow rate controlled by MFC 241b and exhausted from exhaust port 233. At this time, gas GB is supplied to the wafer 200.

[0103] In step B, the flow rate of the inert gas ejected from the first injection holes 250c1, 250d1 at the portion of the first injection holes 250c1, 250d1 where the corresponding second injection holes 250c2, 250d2 are not provided is adjusted so as to form a vortex around the periphery of the corresponding wafer 200. By setting in this manner, the same effect as that described in step A above can be obtained.

[0104] In step B as well, the gas GB is suppressed from diffusing from the dummy region DM to the product region PD by the inert gas from the nozzles 249 c and 249 d , similarly to the gas GA.

[0105] When the gas GB and the inert gas are supplied to the wafer 200 in this manner, at least a portion of the first layer formed on the wafer 200 is modified.

[0106] After the second layer is formed, valve 243b is closed to stop the supply of gas GB. The remaining unreacted gas GB or the gas GB that has participated in the formation of the second layer and the reaction byproducts are then removed from the processing chamber 201 by the same treatment process and treatment conditions as in step A.

[0107] [Number of times of implementation]

[0108] By performing the cycle of steps A and B non-simultaneously, i.e., asynchronously, one or more times (n times), an AB film having a predetermined composition and predetermined thickness can be formed on the wafer 200. The above cycle is preferably repeated multiple times. Specifically, it is preferred that the thickness of the second layer formed after one cycle is thinner than the desired film thickness, and the above cycle is repeated multiple times until the thickness of the AB film formed by laminating the second layer reaches the desired film thickness.

[0109] (Post-purge ~ atmospheric pressure recovery)

[0110] After a film of desired composition and thickness is formed on wafer 200, an inert gas is supplied as a purge gas from nozzles 249a to 249d to process chamber 201 and exhausted from exhaust port 233. Thus, process chamber 201 is purged, and gases and reaction byproducts remaining in process chamber 201 are removed from process chamber 201 (post-purge). Thereafter, the atmosphere in process chamber 201 is replaced with the inert gas, and the pressure in process chamber 201 is restored to normal pressure (return to atmospheric pressure).

[0111] (Boat unloading and wafer unloading)

[0112] The lid 219 is lowered by the lifting mechanism 115, opening the lower end of the manifold 209. The processed wafers 200, supported by the boat 217, are then unloaded from the lower end of the manifold 209 to the exterior of the reaction tube 203 (boat unloading). The gate 221 is then moved, sealing the lower end opening of the manifold 209 with the gate 221 via the O-ring 220c. After being unloaded to the exterior of the reaction tube 203, the processed wafers 200 are removed from the boat 217 (wafer unloading).

[0113] (4) Effects of this embodiment

[0114] According to this embodiment, one or more of the following effects are obtained.

[0115] (a) The system includes a plurality of first injection holes 250c1 and 250d1, which open upstream of the gas flow from the nozzles 249a and 249b toward the exhaust hole 233, respectively, corresponding to the plurality of wafers 200; and one or more second injection holes 250c2 and 250d2, which open downstream of the gas flow from the nozzles 249a and 249b toward the exhaust hole 233, corresponding to a portion of the plurality of wafers 200. Furthermore, the system is configured such that the inert gas supplied from at least one of the first injection holes 250c1 and 250d1 and the second injection holes 250c2 and 250d2 and the process gas from the nozzles 249a and 249b are mixed at the peripheral portions of the plurality of wafers 200. This ensures smooth gas flow over a portion of the plurality of wafers 200, and prevents unintended diffusion of the process gas from the dummy region DM corresponding to the portion of the plurality of wafers 200.

[0116] (b) By providing second injection holes 250c2 and 250d2 corresponding to one or more chips 200 arranged on the uppermost side and one or more chips 200 arranged on the lowermost side among the plurality of chips 200, it is possible to suppress the diffusion of accidental processing gas into other areas where the second injection holes 250c2 and 250d2 are not provided.

[0117] (c) The inert gas supplied from the first injection holes 250c1 and 250d1 and the second injection holes 250c2 and 250d2, respectively, mixes with the processing gas at the periphery of the plurality of wafers 200. This allows for smooth gas flow over the plurality of wafers 200, thereby suppressing diffusion of the processing gas from the plurality of wafers 200.

[0118] (d) The inert gas injected from the first injection holes 250c1, 250d1 at the portion of the first injection holes 250c1, 250d1 where the corresponding second injection holes 250c2, 250d2 are not formed forms a vortex near the peripheral edge of the corresponding wafer 200. Therefore, the inert gas supplied from the first injection holes 250c1, 250d1 can be used to adjust the flow rate of the processing gas at the peripheral edge of the wafer 200, thereby improving the in-plane uniformity of the film formed on the corresponding wafer 200.

[0119] (e) The reaction tube 203 has a first protrusion 302 for accommodating the nozzles 249a and 249b, a second protrusion 303 for accommodating the nozzle 249c, and a third protrusion 304 for accommodating the nozzle 249d. Therefore, the influence of each nozzle on substrate processing can be suppressed.

[0120] (f) The second injection holes 250c2 and 250d2 are provided corresponding to the dummy wafers 200 disposed at the boundary with the product region PD among the plurality of wafers 200. Therefore, the second injection holes 250c2 and 250d2 can suppress the diffusion of the processing gas from the dummy region DM where the dummy wafers 200 are placed to the product region PD where the product wafers 200 are placed.

[0121] (g) By adjusting the setting position of the nozzles 249c and 249d, the orientation of the first injection holes 250c1 and 250d1 and the second injection holes 250c2 and 250d2 formed in the nozzles 249c and 249d, etc., the gas flow on a part of the multiple chips 200 can be smoothed, and the processing gas can be prevented from accidentally diffusing from the virtual area DM corresponding to a part of the multiple chips 200.

[0122] An embodiment of the present invention has been specifically described above, but the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

[0123] In the above embodiment, an example of using two convection nozzles, nozzle 249c and nozzle 249d, has been described. However, the present invention is not limited to this. The convection nozzle may be any one, or three or more. Furthermore, if only one convection nozzle is used, the film thickness at the peripheral edge of the wafer on the side without the convection nozzle increases. Therefore, two or more convection nozzles are preferably used.

[0124] Furthermore, the above-described embodiment can be suitably applied to film formation processes including, for example, CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), processes for forming oxide films and nitride films, and processes for forming films containing metals.

[0125] In addition, the recipe used in substrate processing is preferably prepared separately according to the processing content and stored in the storage device 121c via an electronic communication line or an external storage device 123. Moreover, when the processing is started, the CPU 121a preferably selects an appropriate recipe from the multiple recipes stored in the storage device 121c according to the content of the substrate processing. In this way, films of various film types, composition ratios, film qualities, and film thicknesses can be formed with good reproducibility using a single substrate processing device. In addition, the burden on the operator can be reduced, and processing can be started quickly while avoiding operational errors.

[0126] Furthermore, the aforementioned recipes are not limited to newly created ones; for example, they can be prepared by modifying an existing recipe already installed in a substrate processing apparatus. When modifying a recipe, the modified recipe can be installed in the substrate processing apparatus via an electronic communication line or a recording medium containing the recipe. Alternatively, the input / output device 122 of an existing substrate processing apparatus can be operated to directly modify an existing recipe installed in the apparatus.

[0127] Furthermore, the present invention is not limited to semiconductor manufacturing apparatuses that process semiconductor wafers, such as the above-mentioned substrate processing apparatus, and can also be applied to LCD (Liquid Crystal Display) manufacturing apparatuses that process glass substrates.

Claims

1. A substrate processing device, characterized in that: have: A processing chamber having exhaust holes on the sides of the plurality of substrates accommodated therein; a first nozzle disposed at a position opposite to the exhaust hole and supplying a processing gas for processing the substrate into the processing chamber; and The second nozzle is formed with a plurality of first injection holes and one or more second injection holes, and is configured to supply an inert gas to the processing chamber, wherein the plurality of first injection holes are respectively opened upstream of a flow of gas from the first nozzle toward the exhaust hole corresponding to the plurality of substrates, and the one or more second injection holes are opened downstream of a flow of gas from the first nozzle toward the exhaust hole corresponding to some of the plurality of substrates. The substrate processing apparatus is configured such that the inert gas supplied from at least one of the first injection hole and the second injection hole and the processing gas are mixed at peripheral portions of the plurality of substrates.

2. The substrate processing apparatus according to claim 1, wherein: The first injection hole opens toward the first nozzle.

3. The substrate processing apparatus according to claim 1, wherein: The second injection hole opens toward the exhaust hole.

4. The substrate processing apparatus according to claim 1, wherein: The second injection holes are provided corresponding to one or more substrates arranged on the uppermost layer side and one or more substrates arranged on the lowermost layer side among the plurality of substrates.

5. The substrate processing apparatus according to claim 1, wherein: The first injection holes and the second injection holes are configured to be provided corresponding to the same substrate in the arrangement direction of the plurality of substrates.

6. The substrate processing apparatus according to claim 5, wherein: The first injection hole and the second injection hole are configured to be located at the same position in the arrangement direction of the plurality of substrates.

7. The substrate processing apparatus according to claim 1, wherein: The structure is such that the inactive gas is supplied at a flow rate above a prescribed value, that is, the inactive gas injected from the first injection hole at a portion of the second nozzle where the second injection hole is not provided at a corresponding position in the arrangement direction of the plurality of substrates does not change the in-plane uniformity of the film formed on the corresponding substrate.

8. The substrate processing apparatus according to claim 7, wherein: The inert gas injected from the first injection holes at portions of the second nozzle where the second injection holes are not provided at corresponding positions in the arrangement direction of the plurality of substrates forms a vortex near the peripheral edge of the corresponding substrate.

9. The substrate processing apparatus according to claim 1, wherein: The second nozzle is disposed at a position where an angle formed by a straight line connecting the first nozzle and the center of the substrate and a straight line connecting the second nozzle and the center of the substrate is 120 degrees or less.

10. The substrate processing apparatus according to claim 9, wherein: The second nozzle is disposed at a position where an angle formed by a straight line connecting the first nozzle and the center of the substrate and a straight line connecting the second nozzle and the center of the substrate is equal to or smaller than 90 degrees.

11. The substrate processing apparatus according to claim 10, wherein: The second nozzle is arranged on both end sides of the first nozzle.

12. The substrate processing apparatus according to claim 1, wherein: The processing chamber includes a cylindrical inner tube. The inner tube includes a first nozzle chamber and a second nozzle chamber that protrude outward and house the first nozzle and the second nozzle, respectively, inside the inner tube.

13. The substrate processing apparatus according to claim 12, wherein: An angle formed between the injection direction of the first injection hole and the injection direction of the second injection hole corresponds to an angle when both ends of the opening of the second nozzle chamber are viewed from the center of the second nozzle.

14. The substrate processing apparatus according to claim 13, wherein: An angle formed between the spraying directions of the first spray hole and the second spray hole provided for the corresponding substrate is not less than 60° and not more than 120°.

15. The substrate processing apparatus according to claim 1, wherein The second injection holes are provided corresponding to dummy substrates among the plurality of substrates.

16. The substrate processing apparatus according to claim 15, wherein: The processing gas and the inert gas are configured to mix at a plurality of peripheral portions of the dummy substrate.

17. The substrate processing apparatus according to claim 15, wherein: The second injection holes are provided in an arrangement direction of the plurality of substrates so as to correspond to the dummy substrates that are arranged with the product substrates interposed therebetween among the plurality of substrates.

18. A method for manufacturing a semiconductor device, characterized in that: Including the following steps: a step of preparing a substrate processing apparatus; and a step of mixing the inert gas and the processing gas supplied from at least one of the first injection hole and the second injection hole at the periphery of the plurality of substrates; Wherein, the substrate processing device comprises: a processing chamber having an exhaust hole on the side of the plurality of substrates accommodated therein; a first nozzle disposed at a position opposite to the exhaust hole and supplying the processing gas for processing the substrate into the processing chamber; a plurality of first injection holes, each corresponding to the plurality of substrates, opening upstream of a flow of gas from the first nozzle toward the exhaust hole; one or more second injection holes, which open downstream of a flow of gas from the first nozzle toward the exhaust hole, corresponding to a portion of the plurality of substrates; and The second nozzle is configured to supply the inert gas to the processing chamber.

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