Substrate processing apparatus

Abstract

The invention provides a substrate processing apparatus capable of controlling the processing rate of a substrate with high precision. A substrate processing apparatus (1) according to an embodiment includes: a rotation holding unit (10) that holds and rotates a substrate (W); a processing liquid supply unit (20) that supplies a processing liquid (Lp) to the substrate (W) that is held and rotated by the rotation holding unit (10); a heating unit (50) that has a light-emitting element (51) that emits light having a wavelength absorbed by the substrate (W), and that heats the substrate (W) by irradiating the substrate (W) that is held and rotated by the rotation holding unit (10) with light from the light-emitting element (51); and a temperature measurement unit (70) that has a radiation thermometer (71) that measures the temperature of the processing liquid (Lp) in a non-contact manner on the basis of light radiated from the processing liquid (Lp), and that measures the temperature of the processing liquid (Lp) heated by coming into contact with the substrate (W) by means of the radiation thermometer (71).

Description

Technical Field

[0001] The present invention relates to a substrate processing device. Background Art

[0002] A single-wafer substrate processing apparatus is known that rotates a substrate such as a semiconductor wafer while supplying a processing liquid to the substrate to perform etching or resist removal. In this substrate processing apparatus, a heater heats the substrate being processed or the processing liquid on the substrate, thereby increasing the temperature of the processing liquid and improving processing efficiency.

[0003] [Prior art literature]

[0004] [Patent Document]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-211201 Summary of the Invention

[0006] [Problems to be solved by the invention]

[0007] In recent years, with the miniaturization of semiconductor devices, there has been a demand for more precise control of the substrate processing volume. Therefore, in substrate processing, the substrate processing rate (the processing volume per unit time) must be controlled with high precision.

[0008] The embodiments of the present invention are proposed to solve the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus capable of controlling a processing rate of a substrate with high precision.

[0009] [Technical means to solve the problem]

[0010] A substrate processing apparatus according to an embodiment of the present invention comprises: a rotating holding portion that holds and rotates a substrate; a supply portion that supplies a processing liquid to the substrate held and rotated by the rotating holding portion; a heating portion that comprises a light-emitting element that irradiates light of a wavelength absorbed by the substrate, and heats the substrate held and rotated by the rotating holding portion by irradiating light from the light-emitting element; and a temperature measuring portion that comprises a radiation thermometer that measures the temperature of the processing liquid in contact with the substrate in a non-contact manner, and measures the temperature of the processing liquid heated due to contact with the substrate by the radiation thermometer.

[0011] [Effects of the Invention]

[0012] According to the embodiments of the present invention, the processing rate of a substrate can be controlled with high precision. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1It is a partial cross-sectional view in the axial direction showing the substrate processing apparatus according to the embodiment when supplying the processing liquid.

[0014] Figure 2 Yes Figure 1 A partial axial cross-sectional view of a substrate processing apparatus during supply of a rinse liquid.

[0015] Figure 3 Yes Figure 1 A partial axial cross-sectional view of a substrate during loading and unloading of a substrate in a substrate processing apparatus.

[0016] Figure 4 This is a graph showing the relationship between the wavelength and transmittance of irradiation light with respect to a phosphoric acid solution and a substrate.

[0017] Figure 5 It is a bottom view showing the heating unit.

[0018] Figure 6 This is a graph showing the relationship between the wavelength of irradiation light and absorbance for a phosphoric acid solution and water.

[0019] Figure 7 It is a block diagram of the control device.

[0020] Figure 8 It is a flowchart showing the processing flow of the embodiment.

[0021] Explanation of Figure Numbers

[0022] 1: Substrate processing equipment

[0023] 10: Rotation holding part

[0024] 11: Rotating Platform

[0025] 11a: Facing surfaces

[0026] 12: Chuck pin

[0027] 13: Drive unit

[0028] 20: Treatment liquid supply unit

[0029] 21: Treatment fluid nozzle

[0030] 21a, 31a: Spout

[0031] 22: Treatment liquid supply pipe

[0032] 23: Heater

[0033] 24, 33: valve

[0034] 25: Treatment liquid supply source

[0035] 30: Flushing liquid supply unit

[0036] 31: Flushing fluid nozzle

[0037] 32: Flushing fluid supply pipe

[0038] 34: Flushing fluid supply source

[0039] 40: Wetted part

[0040] 41: Cup

[0041] 42: Undertaking Department

[0042] 50: Heating unit

[0043] 51, 51A~51D: Light-emitting element

[0044] 52: Support

[0045] 53: Hood

[0046] 53a~53c, 521a~521c: through holes

[0047] 60: Lifting mechanism

[0048] 61: Arm

[0049] 62: Pillar

[0050] 70: Temperature measurement unit

[0051] 71, 71A~71D: Radiation thermometer

[0052] 71a: Light receiving part

[0053] 80: Control device

[0054] 81: Organization Control Department

[0055] 82: Temperature control department

[0056] 83, 93: Storage

[0057] 84: Input

[0058] 521: Top plate

[0059] C: Center

[0060] H: Hand of the transport robot

[0061] Lc: flushing fluid

[0062] Lp: treatment liquid

[0063] P1: Move out / move in location

[0064] P2: Heating position

[0065] P3: flushing position

[0066] R, R1~R4: Area

[0067] S01~S19: Steps

[0068] W: substrate DETAILED DESCRIPTION

[0069] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0070] [summary]

[0071] like Figure 1 As shown, the substrate processing apparatus 1 rotates the substrate W held by the rotation holding unit 10 while supplying the processing liquid Lp to the substrate W from the processing liquid supply unit 20, thereby processing the substrate W. The substrate processing apparatus 1 of this embodiment is a single-wafer apparatus that supplies the processing liquid Lp having etching ability to the substrate W for etching. In addition, in this embodiment, as Figure 2 As shown, before and after the supply of the processing liquid Lp, the rinse liquid Lc is supplied from the rinse liquid supply unit 30 to the substrate W to perform the rinse process.

[0072] The substrate processing apparatus 1 includes a heating unit 50 including a light-emitting element 51 and a temperature measuring unit 70 including a radiation thermometer 71. The light-emitting element 51 is a light-emitting diode (LED) that emits light of a wavelength that heats the substrate W, thereby heating the substrate W itself. The measurement wavelength of the radiation thermometer 71 is a wavelength that can measure the temperature of the processing liquid Lp on the substrate W itself. The control device 80 adjusts the output of the light-emitting element 51 based on the measured temperature of the processing liquid Lp. In other words, the object to be heated (substrate W) and the object to be temperature-measured (processing liquid Lp) by the substrate processing apparatus 1 are different.

[0073] The substrate W processed in this embodiment is, for example, a disk-shaped silicon wafer (hereinafter referred to as a Si substrate) having a silicon nitride film and a silicon oxide film formed on its surface. The processing liquid Lp is, for example, an aqueous solution containing phosphoric acid (hereinafter referred to as a phosphoric acid solution). The concentration of phosphoric acid in the processing liquid Lp is, for example, 85 wt % to 94 wt %. The rinse liquid Lc is, for example, pure water (H O).

[0074] (Processing rate control based on temperature measurement)

[0075] The processing rate of the substrate W is affected by the temperature of the substrate W. Therefore, to control the processing rate, for example, a heater for heating the substrate W and a thermometer for measuring the temperature of the substrate W are connected to a control device. The substrate W supplied with the processing liquid Lp is heated while the temperature of the substrate W is measured. The control device compares the measured temperature of the substrate W with a target temperature and adjusts the output of the heater to maintain the temperature of the substrate W at the target temperature, thereby controlling the processing rate.

[0076] As a thermometer, for example, a radiation thermometer can be used. A radiation thermometer is a thermometer that measures the intensity of electromagnetic waves such as infrared rays or visible rays radiated from an object to be measured, and performs correction based on the emissivity of the object to be measured, thereby calculating the temperature of the object. However, the emissivity of an object depends on the material or surface state of the object. Therefore, if the type of substrate W is different, the emissivity will also be different. The so-called type of substrate W specifically refers to the material forming the substrate W or the type of film formed on the surface of the substrate W, or the type of pattern (concave and convex) formed on the surface of the substrate W. Therefore, in order to accurately measure the temperature of the substrate W using a radiation thermometer, the emissivity must be calculated in advance for each substrate W, and the setting of the radiation thermometer must be adjusted individually according to the type of substrate W, which is time-consuming and labor-intensive.

[0077] Therefore, the inventors have devoted themselves to researching a technique for obtaining highly accurate temperature information, even without individually adjusting the radiation thermometer for each type of substrate W. This resulted in the development of a substrate processing apparatus 1 according to the embodiment described below. By obtaining accurate temperature information, as in this embodiment, the amount of change in the output of the light-emitting element 51 required to achieve the target temperature can be more accurately determined. Furthermore, by changing the output of the light-emitting element 51, the temperature of the processing liquid Lp can be maintained at the target temperature, enabling highly accurate control of the processing rate of the substrates W.

[0078] [structure]

[0079] like Figure 1 As shown, the substrate processing apparatus 1 of this embodiment includes a rotation holding unit 10 , a processing liquid supply unit 20 , a rinse liquid supply unit 30 , a liquid receiving unit 40 , a heating unit 50 , a lifting mechanism 60 , a temperature measuring unit 70 , and a control device 80 .

[0080] (Rotation holding part)

[0081] The rotary holding unit 10 holds and rotates the substrate W. The rotary holding unit 10 includes a rotary platform 11, chuck pins 12, and a drive unit 13. The rotary platform 11 is a cylindrical member, one end of which is closed by a facing surface 11a. The facing surface 11a is a circular surface with a larger diameter than the substrate W, and faces the substrate W to be processed with a gap therebetween.

[0082] The chuck pins 12 are holding members that hold the substrate W on the facing surface 11a of the rotating platform 11 at intervals. A plurality of chuck pins 12 protrude from the rotating platform 11 and are provided at equal intervals along the outer periphery of the substrate W. Furthermore, the chuck pins 12 are movable by an opening and closing mechanism (not shown) between a closed position in which they engage the outer periphery of the substrate W to hold the substrate W and an open position in which they are spaced apart from the outer periphery to release the substrate W.

[0083] The driving unit 13 is a driving source (motor) for rotating the rotary table 11. The driving unit 13 rotates the substrate W held by the chuck pins 12 by rotating the rotary table 11.

[0084] (Processing liquid supply unit)

[0085] The processing liquid supply unit 20 supplies processing liquid Lp to the substrate W held and rotated by the rotating holding unit 10. The processing liquid supply unit 20 includes a processing liquid nozzle 21, a processing liquid supply pipe 22, a heater 23, and a valve 24. The processing liquid nozzle 21 is inserted through a support portion 52 and a cover 53 of a heating unit 50 (described later), and a discharge port 21a at the front end is provided so as to face the vicinity of the center of the substrate W held by the rotating holding unit 10.

[0086] The processing liquid nozzle 21 is connected to a processing liquid supply source 25, such as a storage tank, which stores the processing liquid Lp, via a processing liquid supply pipe 22. In this embodiment, the processing liquid Lp supplied from the processing liquid supply source 25 is preheated. A heater 23 is provided midway along the processing liquid supply pipe 22. After the processing liquid Lp supplied from the processing liquid supply source 25 passes through the processing liquid supply pipe 22 and is heated by the heater 23, it is ejected from the ejection port 21a of the processing liquid nozzle 21 toward the vicinity of the center of the substrate W.

[0087] The temperature of the treatment liquid Lp ejected from the treatment liquid nozzle 21 is, for example, 160°C. Furthermore, a valve 24 is provided midway along the treatment liquid supply pipe 22. The valve 24 is opened and closed to start and stop ejection of the treatment liquid Lp from the treatment liquid nozzle 21. The valve 24 is electrically connected to a control device 80, described later, and its opening and closing are controlled by the control device 80.

[0088] (Rinsing fluid supply unit)

[0089] like Figure 2As shown, the rinse liquid supply unit 30 supplies rinse liquid Lc to the substrate W held by the rotating holding unit 10. Pure water, for example, can be used as the rinse liquid Lc. The rinse liquid supply unit 30 includes a rinse liquid nozzle 31, a rinse liquid supply pipe 32, and a valve 33. The rinse liquid nozzle 31 is inserted through a support portion 52 and a cover 53 of a heating unit 50 (described later), and a discharge port 31a at the front end is positioned so as to face the vicinity of the center of the substrate W held by the rotating holding unit 10.

[0090] The rinsing liquid nozzle 31 is connected to a rinsing liquid supply source 34, such as a storage tank storing the rinsing liquid Lc, via a rinsing liquid supply pipe 32. The rinsing liquid Lc transported from the rinsing liquid supply source 34 is ejected from the ejection port 31a of the rinsing liquid nozzle 31 to near the center of the substrate W through the rinsing liquid supply pipe 32. A valve 33 is provided in the middle of the rinsing liquid supply pipe 32. By opening and closing the valve 33, the ejection of the rinsing liquid Lc from the rinsing liquid nozzle 31 is started and stopped. The valve 33 is electrically connected to a control device 80 described later, and the opening and closing thereof are controlled by the control device 80.

[0091] (wetted part)

[0092] The liquid receiving portion 40 is provided to surround the rotation holding portion 10 , and receives the processing liquid Lp and the rinsing liquid Lc scattered from the rotating substrate W. The liquid receiving portion 40 discharges the received processing liquid Lp and the rinsing liquid Lc to the outside of the substrate processing apparatus 1 .

[0093] The liquid receiving portion 40 includes a cup portion 41 and a receiving portion 42. The cup portion 41 is a cylindrical body that covers the periphery of the rotating holding portion 10 at intervals and is curved in a manner that the diameter of the upper portion is narrowed. The cup portion 41 is moved to a standby position (see FIG. 1 ) by a lifting mechanism (not shown). Figure 3 ) and processing position (refer to Figure 1 、 Figure 2 ) is movably arranged between the receiving portion 42. The receiving portion 42 is an annular container arranged below the cup portion 41 and having an opening at the top.

[0094] The processing liquid Lp and the rinsing liquid Lc scattered from the substrate W are received by the cup portion 41 and fall downward along the inner wall of the cup portion 41, thereby flowing into the receiving portion 42. The processing liquid Lp and the rinsing liquid Lc flowing into the receiving portion 42 are discharged outside the substrate processing apparatus 1 through an outlet (not shown) formed on the bottom surface of the receiving portion 42.

[0095] (Heating section)

[0096] The heating unit 50 irradiates the light from the light emitting element 51 onto the substrate W held and rotated by the rotating holding unit 10, thereby heating the substrate W. The processing liquid Lp supplied to the vicinity of the center of the substrate W flows in a manner that expands toward the outer edge of the substrate W due to centrifugal force. At this time, if there is no further heating, the supplied high-temperature (160°C) processing liquid Lp decreases in temperature as it flows on the substrate W due to heat conduction or heat dissipation toward the substrate W. Therefore, by heating the substrate W, the processing liquid Lp on the substrate W can be heated by means of heat conduction from the substrate W, so that the processing liquid Lp on the substrate W can be maintained at a high temperature. In addition, the output of the heating unit 50 can also be controlled so as not only to maintain the temperature of the processing liquid Lp but also to further increase the temperature on the substrate W.

[0097] The light emitting element 51 emits light (electromagnetic waves) of a wavelength that is absorbed by the substrate W and heats the substrate W. Moreover, the light emitted by the light emitting element 51 is light of a wavelength that is transmitted through the processing liquid Lp. Here, "absorbed by the substrate W" means that the light incident on the substrate W is absorbed to a sufficient extent to heat the substrate W, and includes not only the case where the light is completely absorbed by the substrate W, but also the case where a portion of the light is reflected by the substrate W or transmits through the substrate W. The so-called "transmitted through the processing liquid Lp" means that the light incident on the processing liquid Lp transmits through the processing liquid Lp to a sufficient extent to heat the substrate W, and also includes the case where a portion of the light is absorbed or reflected by the processing liquid Lp.

[0098] As the light-emitting element 51, for example, an LED that emits light for heating is used. The wavelength of the light emitted by the LED is, for example, 350 nm to 1060 nm (350 nm to 1060 nm). More preferably, the center wavelength is 395 nm to 940 nm (395 nm to 940 nm). In this embodiment, an LED that emits light with a center wavelength of 395 nm is used. In addition, the output of the light-emitting element 51 is controlled by the control device 80 described later. Figure 4 The transmission spectra of phosphoric acid solution and Si substrate are shown in FIG. In addition, the UV-visible near-infrared spectrophotometer (V-770) of JASCO Corporation was used for the measurement of each transmission spectrum. Figure 4 As shown in the graph, 350 nm to 1060 nm are wavelengths at which the transmittance to the phosphoric acid solution is high (the transmittance is 70% or more) and the absorptivity of the Si substrate is high (the transmittance is approximately 0%).

[0099] Thus, even when light is irradiated from the light emitting element 51 from above the space holding the substrate W, that is, from above the processing liquid Lp supplied to the substrate W, the light can be transmitted through the processing liquid Lp on the substrate W and absorbed by the substrate W, thereby heating the substrate W. Furthermore, the temperature of the processing liquid Lp increases due to heat conduction from the substrate W, thereby increasing the etching rate (processing rate).

[0100] In addition to the light-emitting elements 51, the heating section 50 also includes a support section 52 and a cover 53. The support section 52 is a component that supports the plurality of light-emitting elements 51. The support section 52 is a cylindrical component whose upper end is closed by a top plate 521. The diameter of the support section 52 is the same as or larger than the diameter of the substrate W. The support section 52 is arranged above the rotating platform 11 at a position facing the opposing surface 11a with a gap therebetween. Thus, the heating section 50 is configured to irradiate light from the light-emitting elements 51 from above the space in which the substrate W is held by the rotating holding section 10. In addition, two through holes 521a and 521b are provided near the center of the top plate 521 of the support section 52.

[0101] like Figure 5 As shown, the cover 53 is a disk-shaped member that covers the end of the support portion 52 facing the rotating platform 11. The cover 53 is formed of a material that is resistant to the processing liquid Lp and transmits the light emitted from the light emitting element 51. For example, the cover 53 is made of quartz. In addition, two through holes 53a and 53b are formed near the center C of the cover 53. Figure 5 In FIG. 5 , the light emitting element 51 viewed through the cover 53 is indicated by a solid line.

[0102] like Figure 1 As shown, the processing liquid nozzle 21 is inserted through the through holes 521a and 53a so that the discharge port 21a at the front end is exposed from the cover 53 and faces the substrate W. The rinse liquid nozzle 31 is inserted through the through holes 521b and 53b so that the discharge port 31a at the front end is exposed from the cover 53 and faces the substrate W.

[0103] A plurality of light-emitting elements 51 are mounted on the support portion 52 so as to face the rotating platform 11 with a cover 53 interposed therebetween. The heating portion 50 has multiple regions for the light-emitting elements 51. In other words, the light-emitting elements 51 are arranged in multiple regions. In this embodiment, the light-emitting elements 51 are arranged in regions corresponding to different radial positions of the substrate W, and the output of the light-emitting elements 51 can be controlled for each region. Furthermore, the light-emitting elements 51 are arranged so as to illuminate the entire surface of the substrate W being processed.

[0104] For example, Figure 5As shown, multiple light-emitting elements 51A to 51D are arranged in four concentric annular regions R1 to R4 (indicated by a two-dot chain line in the figure), so that the output can be controlled according to each region R1 to R4. Regions R1 to R4 do not have light-emitting elements 51 arranged in these regions, excluding the fan-shaped region where the temperature measuring unit 70, described later, is located. In the following description, regions R1 to R4 are simply referred to as regions R when they are not distinguished. Furthermore, light-emitting elements 51A to 51D are simply referred to as light-emitting elements 51 when they are not distinguished.

[0105] in addition, Figure 5 In order to facilitate identification of the regions R, the intervals between the light emitting elements 51 corresponding to the boundaries of the regions R are increased. However, as long as the controlled regions R are distinguished, the intervals between the light emitting elements 51 can also be equal. Moreover, the number of light emitting elements 51 is not limited to Figure 5 For example, hundreds to thousands of light emitting elements 51 may be densely arranged as a whole. By rotating the substrate W relative to the plurality of light emitting elements 51, the entire substrate W can be irradiated with light and the entire surface of the substrate W can be heated.

[0106] (Lifting mechanism)

[0107] like Figure 1 As shown, the lifting mechanism 60 supports and elevates the heating unit 50. The lifting mechanism 60 includes an arm 61 and a support column 62. The arm 61 extends parallel to the substrate W, and one end is connected to the outer periphery of the support unit 52. The support column 62 is vertically arranged in a direction perpendicular to the substrate W and supports the other end of the arm 61. The support column 62 is arranged to be movable up and down by a drive source such as a ball screw mechanism or an air cylinder (not shown).

[0108] The heating unit 50 is positioned at any height among the carry-in / carry-out position P1, the heating position P2, and the rinsing position P3 by driving the lifting mechanism 60. Each position is as follows.

[0109] Loading / unloading position P1: A height position spaced upward from the rotating platform 11 so as to allow the hand H of the transfer robot to be inserted (see Figure 3 ).

[0110] Heating position P2: A height position closer to the substrate W than the carry-in / carry-out position P1 (see Figure 1 ). However, it does not come into contact with the processing liquid Lp on the substrate W.

[0111] Flushing position P3: height position between the carry-out / carry-in position P1 and the heating position P2 (refer to Figure 2 ).

[0112] (Temperature measurement unit)

[0113] The temperature measuring unit 70 uses a radiation thermometer 71 to measure the temperature of the processing liquid Lp, which is heated by contact with the substrate W. The radiation thermometer 71 focuses light (electromagnetic waves) radiated from an object onto a detection element and outputs an electrical signal corresponding to the temperature. The radiation thermometer 71 of this embodiment measures the temperature of the processing liquid Lp in a non-contact manner based on the light radiated from the processing liquid Lp. More specifically, the light radiated from the processing liquid Lp is received by the light receiving unit 71a, and the temperature of the processing liquid Lp is calculated based on the light intensity.

[0114] The radiation thermometers 71 are provided at positions corresponding to the plurality of regions R. That is, the number of radiation thermometers 71 provided corresponds to the plurality of regions R. In this embodiment, four radiation thermometers 71A to 71D are fixed to the support portion 52, corresponding to regions R1 to R4. When not distinguishing between the radiation thermometers 71A to 71D, they are simply referred to as the radiation thermometers 71.

[0115] More specifically, if Figure 1 and Figure 5 As shown, through-holes 521c and through-holes 53c are formed on the circumferences of the fan-shaped areas of the cover 53 and the support portion 52 where no light-emitting elements 51 are arranged, corresponding to the regions R1 to R4 where light-emitting elements 51 are arranged. Four through-holes 521c are provided in the support portion 52, and four through-holes 53c are provided in the cover 53, corresponding to the four regions R1 to R4, respectively.

[0116] Each radiation thermometer 71A to 71D is inserted into each through-hole 521c and fixed in such a manner that the light receiving portion 71a faces the substrate W held by the rotating holding portion 10 via each through-hole 53c. The radiation thermometer 71 is electrically connected to the control device 80. The measurement wavelength of the radiation thermometer 71 is set to a wavelength that can measure the intensity of light radiated from the processing liquid Lp. Moreover, the measurement wavelength of the radiation thermometer 71 and the wavelength of the light emitted by the light emitting element 51 are preferably set to different wavelengths. By setting the measurement wavelength of the radiation thermometer 71 and the wavelength of the light emitted by the light emitting element 51 to different wavelengths, the phenomenon of stray light being generated in the radiation thermometer 71 can be prevented, thereby suppressing measurement errors.

[0117] For example, when the treatment liquid Lp is a phosphoric acid solution, the measurement wavelength is preferably set to 2.2 μm to 2.4 μm (2.2 μm to 2.4 μm). In this embodiment, the measurement wavelength is set to 2.3 μm. The reason why the measurement wavelength is preferably 2.2 μm to 2.4 μm is as follows.

[0118] That is, the absorption spectra of phosphoric acid solution (concentration 85 wt %, concentration 93 wt %) and water (H2O) in the range of 1 μm to 2.5 μm based on infrared spectroscopy are shown in FIG. Figure 6 The measurements were performed using a UV / visible / near-infrared spectrophotometer (SolidSpec-3700 DUV) manufactured by Shimadzu Corporation.

[0119] according to Figure 6 It can be seen that the phosphoric acid solution has a high absorbance at wavelengths between 2.2 μm and 2.4 μm, while the water has a low absorbance. In other words, the wavelengths between 2.2 μm and 2.4 μm have a high intensity ratio between the phosphoric acid solution and water. By using this wavelength as the measurement wavelength for the radiation thermometer 71, even if water vapor is generated during processing, the temperature of the treatment liquid Lp can be measured while suppressing its influence.

[0120] (Control device)

[0121] The control device 80 controls various components of the substrate processing apparatus 1. To implement the various functions of the substrate processing apparatus 1, the control device 80 includes a processor for executing programs, a memory for storing programs and various information such as operating conditions, and a drive circuit for driving various components. Specifically, the control device 80 controls the rotation holding unit 10, the processing liquid supply unit 20, the rinse liquid supply unit 30, the liquid receiving unit 40, the heating unit 50, the lifting mechanism 60, the temperature measuring unit 70, and the like.

[0122] More specifically, if Figure 7 As shown, the control device 80 includes a mechanism control unit 81, a temperature control unit 82, and a storage unit 83. The mechanism control unit 81 controls the operation of the opening and closing mechanism of the rotation holding unit 10, the driving unit 13, the heater 23 and valve 24 of the processing liquid supply unit 20, the valve 33 of the rinse liquid supply unit 30, the lifting mechanism of the liquid receiving unit 40, the lifting mechanism 60, and the like.

[0123] The temperature control unit 82 controls the heating temperature of the substrate W by the heating unit 50 based on the temperature of the processing liquid Lp measured by the temperature measuring unit 70. The storage unit 83 stores information required for processing by various components of the substrate processing apparatus 1. For example, the storage unit 93 stores the target temperature of the processing liquid Lp and the emissivity of the processing liquid Lp.

[0124] The radiation thermometer 71 corrects the measured light intensity based on the emissivity of the processing liquid Lp pre-stored in the storage unit 93, and calculates the temperature of the processing liquid Lp on the substrate W. Furthermore, the calculated temperature is sent to the control unit 80. The temperature control unit 82 adjusts the light intensity of the light-emitting element 51 of the heating unit 50 to heat the substrate W so that the temperature of the processing liquid Lp reaches the target temperature. At this time, the temperature of the processing liquid Lp in each region R1 to R4 is controlled by adjusting the light intensity of each light-emitting element 51A to 51D according to the temperature of the processing liquid Lp measured by the radiation thermometers 71A to 71D in each region R1 to R4. That is, the control unit 80 controls the output of the light-emitting element 51 for each of the multiple regions R based on the temperature of the substrate W measured by the radiation thermometer 71.

[0125] The control device 80 is also connected to an input unit 84 . The input unit 84 includes, for example, a touch panel, a keyboard, a mouse, etc. The operator can input information required for processing the substrate W, such as the target temperature of the processing liquid Lp and the emissivity of the processing liquid Lp, through the input unit 84 .

[0126] [action]

[0127] In addition to the Figures 1 to 7 In addition, refer to Figure 8 The operation of the substrate processing apparatus 1 according to the present embodiment will be described with reference to a flowchart. A substrate processing method for processing a substrate W according to the following flow is also one aspect of the present embodiment.

[0128] like Figure 3 As shown, the heating unit 50 is pre-positioned at the carry-in / carry-out position P1, and the cup unit 41 is pre-positioned at the standby position. The valve 24 of the treatment liquid supply unit 20 and the valve 33 of the rinse liquid supply unit 30 are closed.

[0129] In this state, the chuck pins 12 are in the open position. After the substrate W, mounted on the hand H of the transfer robot, is moved between the heating unit 50 and the rotating platform 11, the chuck pins 12 are moved to the closed position, thereby supporting the periphery of the substrate W with the chuck pins 12. As a result, the substrate W is held on the facing surface 11a of the rotating platform 11, spaced apart from the facing surface 11a (step S01). At this point, the center of the substrate W is aligned with the rotation axis of the rotating platform 11. Subsequently, the cup portion 41 is raised and positioned at the processing position (step S02).

[0130] Next, if Figure 2 As shown, the substrate W held by the chuck pins 12 starts to rotate as the rotary stage 11 rotates, and the heating unit 50 descends and is positioned at the rinsing position P3 (step S03 ).

[0131] Then, the valve 33 of the rinse liquid supply unit 30 is opened, and the rinse liquid Lc is sprayed from the rinse liquid nozzle 31 toward the center of the substrate W (step S04). When the rinse liquid Lc is supplied to the rotating substrate W, the rinse liquid Lc moves toward the outer periphery of the substrate W and spreads to the entire processing surface of the substrate W.

[0132] Without the supply of this rinsing liquid Lc, when the processing liquid Lp is supplied, surface tension will prevent the processing liquid Lp from infiltrating and spreading across the entire processing surface of the substrate W, resulting in uneven processing. In this embodiment, to prevent this uneven processing, rinsing liquid Lc is supplied in this step before the processing liquid Lp is supplied. When the specified rinsing time has elapsed (Yes in step S05), the valve 33 of the rinsing liquid supply unit 30 closes, and the discharge of the rinsing liquid Lc from the rinsing liquid nozzle 31 stops (step S06).

[0133] Next, if Figure 1 As shown, the heating unit 50 begins to descend and stops at the heating position P2 (step S07). Subsequently, the valve 24 of the processing liquid supply unit 20 opens, and the processing liquid Lp is sprayed from the processing liquid nozzle 21 toward the center of the substrate W (step S08). As the processing liquid Lp is supplied to the rotating substrate W, the processing liquid Lp moves toward the periphery of the substrate W and spreads across the entire processing surface of the substrate W. Because the processing surface of the substrate W is pre-supplied with the rinse liquid Lc, the processing liquid Lp infiltrates and spreads across the entire processing surface of the substrate W, preventing uneven processing.

[0134] At the same time as the ejection of the processing liquid Lp begins, the heating of the substrate W by irradiation with light from the light-emitting element 51 and the temperature measurement of the processing liquid Lp by the radiation thermometer 71 are started. During the heating process of the substrate W, the temperature control unit 82 of the control device 80 performs feedback control on the output of the light-emitting element 51 based on the temperature measurement result of the processing liquid Lp, thereby ensuring that the temperature of the processing liquid Lp on the substrate W is the target temperature (step S09). Even if there is water vapor (H2O) generated by heating, since the absorbance of water is small, the measurement wavelength of the radiation thermometer 71 can suppress the influence of water vapor and measure the temperature of the processing liquid Lp. This process is continued until the specified processing time has passed (No in step S10).

[0135] If the predetermined processing time has elapsed (YES in step S10), the valve 24 of the processing liquid supply unit 20 is closed, and the supply of the processing liquid Lp from the processing liquid nozzle 21 is stopped (step S11). At the same time, the irradiation of light from the light emitting element 51 and the temperature measurement by the radiation thermometer 71 are stopped.

[0136] like Figure 2As shown, the heating unit 50 begins to rise, reaches the rinsing position P3, and stops (step S12). Subsequently, the valve 33 of the rinsing liquid supply unit 30 opens, and the rinsing liquid Lc is sprayed from the rinsing liquid nozzle 31 toward the center of the substrate W (step S13). As the rinsing liquid Lc is supplied to the rotating substrate W, it gradually moves toward the periphery of the substrate W and spreads across the entire processed surface of the substrate W.

[0137] When the rinsing liquid Lc is supplied to the phosphoric acid solution processing liquid Lp, a large amount of water vapor is generated. At this time, since the heating unit 50 is located at the rinsing position P3, which is farther from the substrate W than the heating position P2, the water vapor is prevented from adhering to the heating unit 50. Furthermore, since the rinsing position P3 is closer to the substrate W than the carry-in / carry-out position P1, liquid splashing is suppressed, thereby preventing liquid droplets from adhering to the heating unit 50.

[0138] When the predetermined rinsing time has elapsed (YES in step S14), the valve 33 of the rinsing liquid supply unit 30 closes, and the discharge of the rinsing liquid Lc from the rinsing liquid nozzle 31 stops (step S15). The rotating stage 11 stops, and the rotation of the substrate W held by the chuck pins 12 stops (step S16). Subsequently, the cup portion 41 descends and is positioned in the standby position (step S17).

[0139] like Figure 3 As shown, the heating unit 50 rises and is positioned at the carry-in / carry-out position P1 (step S18). In this state, the transfer robot's hand H is inserted under the substrate W, and the chuck pins 12 are in the open position. The substrate W is then placed on the transfer robot's hand H and carried outside (step S19). At this point, the rinse liquid Lc is retained on the substrate W.

[0140] [Effect]

[0141] (1) The substrate processing apparatus 1 of this embodiment comprises: a rotating holding portion 10 for holding and rotating a substrate W; a processing liquid supply portion 20 for supplying a processing liquid Lp to the substrate W held and rotated by the rotating holding portion 10; a heating portion 50 comprising a light-emitting element 51 for emitting light of a wavelength absorbed by the substrate W, and heating the substrate W held and rotated by the rotating holding portion 10 by irradiating light from the light-emitting element 51; and a temperature measuring portion 70 comprising a radiation thermometer 71 for contactlessly measuring the temperature of the processing liquid Lp based on light radiated from the processing liquid Lp, and measuring the temperature of the processing liquid Lp heated by contact with the substrate W by the radiation thermometer 71.

[0142] Therefore, by measuring the temperature of the processing liquid Lp in contact with the substrate W rather than the temperature of the substrate W while heating the substrate W, the processing rate of the substrate W can be controlled with high precision. As described above, different types of substrates W have different emissivities. Therefore, in order to accurately measure the temperature of the substrate W using the radiation thermometer 71, the emissivity must be calculated for each type of substrate W and the radiation thermometer 71 must be set accordingly.

[0143] On the other hand, in this embodiment, the temperature of the processing liquid Lp is measured by the radiation thermometer 71 instead of the temperature of the substrate W. That is, the measurement wavelength of the radiation thermometer 71 is set to a wavelength that can measure the intensity of light radiated from the processing liquid Lp. The emissivity set for the radiation thermometer 71 can be the emissivity of the processing liquid Lp, so there is no need to calculate the emissivity for each substrate W and set the radiation thermometer 71. In addition, the substrate W is heated by the light-emitting element 51, whereby the processing liquid Lp is also heated by heat conduction from the heated substrate W. Therefore, the temperature change of the processing liquid Lp will follow the temperature change of the substrate W. By measuring the intensity of light radiated from the processing liquid Lp, temperature information can be obtained even for different types of substrates W. In addition, by changing the output of the light-emitting element 51 based on the temperature information, the processing rate can be controlled.

[0144] (2) The light from the light emitting element 51 has a wavelength that transmits the processing liquid Lp. The heating unit 50 is provided so as to irradiate the light from the light emitting element 51 from above the space where the substrate W is held by the rotating holding unit 10 .

[0145] By irradiating the substrate W with light of a wavelength that transmits the processing liquid Lp from above as described above, the substrate W can be heated starting from the processing surface of the substrate W. In other words, heating can be performed starting from the interface between the substrate W and the processing liquid Lp, thereby efficiently heating the processing liquid Lp on the substrate W.

[0146] (3) The treatment liquid Lp supplied by the treatment liquid supply unit 20 is an aqueous solution containing phosphoric acid, and the measurement wavelength of the radiation thermometer 71 is 2.2μm to 2.4μm. Therefore, the temperature of the treatment liquid Lp can be measured while suppressing the influence of water vapor. That is, when the heated treatment liquid Lp is ejected, or when the rinsing liquid Lc is supplied to the treatment liquid Lp on the heated substrate W, vapor (water vapor) is generated. If there is water vapor in the optical path of the radiation thermometer 71, the light radiated from the water vapor will also be detected, and this may sometimes affect the measurement result of the radiation thermometer 71. That is, the light intensity radiated from the treatment liquid Lp on the substrate W may not be accurately measured and may deviate from the actual temperature.

[0147] As mentioned above, in the phosphoric acid solution, the absorbance of the phosphoric acid solution is large and the absorbance of water is small at the wavelength of 2.2μm to 2.4μm. Figure 6 ). That is, the wavelength at which the intensity ratio between the phosphoric acid solution and water is large. Therefore, by setting the measurement wavelength of the radiation thermometer 71 to 2.2 μm to 2.4 μm, even if water vapor is generated, the influence of water vapor can be suppressed and the temperature of the treatment liquid Lp can be measured. As described above, by setting the measurement wavelength at a wavelength with high absorbance for the treatment liquid Lp and low absorbance for water, that is, a wavelength that is easily absorbed by the treatment liquid Lp and poorly absorbed by water, the influence of water vapor can be suppressed and the temperature of the treatment liquid Lp can be measured more accurately.

[0148] (4) The light emitted by the light emitting element 51 has a wavelength within the range of 350 nm to 1060 nm. Therefore, the light from the light emitting element 51 can be transmitted through the processing liquid Lp such as phosphoric acid solution to heat the substrate W such as a silicon wafer.

[0149] (5) The heating section 50 includes a plurality of regions R where the light emitting elements 51 are arranged. The radiation thermometers 71 are provided at positions corresponding to the plurality of regions R, and the substrate processing apparatus includes a control device 80 that controls the output of the light emitting elements 51 for each of the plurality of regions R based on the temperature of the substrate W measured by the radiation thermometers 71. Therefore, the temperature of the entire region can be made uniform in response to the fact that the temperature of the processing liquid Lp supplied near the center of the substrate W decreases as it spreads toward the outer edge of the substrate W, or in response to the fact that the processing rate of the substrate W is to be locally changed, a desired region R can be set to a high temperature or a low temperature.

[0150] (6) The plurality of regions R correspond to different radial positions of the substrate W. Therefore, the heating temperature can be changed for each region on the concentric circle of the rotating substrate W to make the processing rate uniform across the entire substrate W or to locally change the processing rate.

[0151] (7) A plurality of light emitting elements 51 are arranged so as to irradiate the entire surface to be processed of the substrate W with light. Therefore, the processing rate of the entire surface to be processed of the substrate W can be controlled.

[0152] (8) The heating unit 50 is provided with an elevating mechanism 60 for elevating the heating unit 50. When the processing liquid Lp is supplied from the processing liquid supply unit 20 to the substrate W, the elevating mechanism 60 positions the heating unit 50 at a heating position P2 that is closer to the substrate W than the position when the substrate W is loaded or unloaded. Thus, while ensuring space for loading or unloading the substrate W, the heating unit 50 can be brought close to the substrate W during processing, allowing efficient heating.

[0153] [Modification]

[0154] (1) The processing performed by the substrate processing apparatus 1 is not limited to etching processing. Any apparatus may be used as long as it processes the substrate W while supplying the processing liquid Lp. For example, resist removal processing for removing a resist film formed on the substrate W may also be performed.

[0155] (2) The treatment liquid Lp is not limited to a phosphoric acid solution. Any treatment liquid Lp that requires heating may be used. For example, hydrofluoric acid may be used. Furthermore, in the case of resist removal, a sulfuric acid peroxide mixture (SPM) (sulfuric acid hydrogen peroxide solution) may be used as the treatment liquid Lp.

[0156] (3) The substrate W to be processed may be a Si substrate having a resist formed on its surface. Furthermore, the substrate W is not limited to a Si substrate. For example, it may be a SiC substrate (silicon carbide wafer).

[0157] (4) The number and arrangement of the light-emitting elements 51 are not limited to the above-described embodiments. Furthermore, the number of regions R is not limited to four, as long as there are multiple regions. Furthermore, the temperature measurement by the radiation thermometer 71 and the heating by the light-emitting element 51 do not need to be controlled by dividing the temperature into multiple regions R. The light from the light-emitting element 51 may be guided through an optical fiber and emitted onto the substrate W. Therefore, the light-emitting element 51 does not need to be arranged above the substrate W.

[0158] (5) In the above-described embodiment, the rinsing liquid nozzle 31 is configured to penetrate the support portion 52 and the cover 53. However, a mechanism may be provided to move the rinsing liquid nozzle 31 in a horizontal direction so that the rinsing liquid nozzle 31 is moved above the center of the substrate W when the rinsing liquid Lc is supplied.

[0159] (6) The support portion 52 on which the light emitting element 51 is arranged is a circular member having a diameter equal to or larger than the diameter of the substrate W, but is not limited thereto. It suffices as long as it can illuminate the entire surface of the substrate W relative to the rotating substrate W. For example, it may be a rectangular member having a size that can cover the radius of the substrate W. As long as the radius of the substrate W can be illuminated, the entire surface of the substrate W can be illuminated by rotating the substrate W. Furthermore, the support portion 52 may be provided so as to be swingable in the horizontal direction, and by swinging the support portion 52 while emitting light from the light emitting element 51, the entire surface of the substrate W can be illuminated.

[0160] In this manner, when the support portion 52 is smaller than the diameter of the substrate W, a mechanism for moving the processing liquid nozzle 21 in the horizontal direction may be provided to move the processing liquid nozzle 21 above the substrate W during processing liquid supply. In other words, the processing liquid nozzle 21 may be arranged in any location as long as it can supply the processing liquid Lp toward the vicinity of the center of the substrate W while irradiating light from the light emitting element 51.

[0161] The light emitting element 51 may also be configured to irradiate light onto the substrate W from below the substrate W to heat it. In this case, it is sufficient to provide a support portion that supports the light emitting element 51 on the facing surface 11a of the rotating platform 11 in such a manner that the rotation from the driving portion 13 is not transmitted. Alternatively, it is sufficient to provide a support portion that rotates at a different rotational speed relative to the rotational speed (number of revolutions per unit time) of the rotating platform 11 on the facing surface 11a of the rotating platform 11. Among them, irradiating the upper surface of the substrate W with light from the light emitting element 51 as in the above-described embodiment enables heating starting from the interface with the processing liquid Lp, and is therefore preferred.

[0162] (7) The radiation thermometer 71 only needs to be able to measure the temperature of the processing liquid Lp on the substrate W. Therefore, a mechanism for moving the support portion of the radiation thermometer 71 in the horizontal direction may be provided so that the radiation thermometer 71 is moved above the substrate W when measuring the temperature.

[0163] [Other embodiments]

[0164] While the embodiments and variations of the various components of the present invention have been described above, these embodiments and variations are provided as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms and may be omitted, replaced, combined, or modified without departing from the spirit of the invention. These embodiments and variations thereof are intended to be within the scope and spirit of the invention and are encompassed by the invention as set forth in the claims.

Claims

1. A substrate processing device, characterized in that: have: A rotation holding portion holds the substrate and rotates it; a processing liquid supplying portion for supplying a processing liquid to the substrate held and rotated by the rotation holding portion; a heating unit including a light emitting element that emits light of a wavelength absorbed by the substrate, and heating the substrate by irradiating the substrate held and rotated by the rotation holding unit with light from the light emitting element; as well as The temperature measuring unit includes a radiation thermometer for non-contactly measuring the temperature of the processing liquid based on light radiated from the processing liquid, and the temperature of the processing liquid heated by contact with the substrate is measured by the radiation thermometer.

2. The substrate processing apparatus according to claim 1, wherein: The light from the light emitting element is light of a wavelength that is transmitted through the treatment liquid. The heating unit is provided so as to irradiate light from the light emitting element from above a space in which the substrate is held by the rotation holding unit.

3. The substrate processing apparatus according to claim 1 or 2, wherein: The treatment liquid supplied by the treatment liquid supply unit is an aqueous solution containing phosphoric acid. The measurement wavelength of the radiation thermometer is 2.2 μm to 2.4 μm.

4. The substrate processing apparatus according to claim 1 or 2, wherein: The light emitted by the light emitting element has a wavelength within a range of 350 nm to 1060 nm.

5. The substrate processing apparatus according to claim 1, wherein: The treatment liquid supplied by the treatment liquid supply unit is an aqueous solution containing phosphoric acid. The measurement wavelength of the radiation thermometer is 2.2μm to 2.4μm. The light emitted by the light emitting element is light with a wavelength within the range of 350nm to 1060nm. The heating unit is provided so as to irradiate light from the light emitting element from above a space in which the substrate is held by the rotation holding unit.

6. The substrate processing apparatus according to claim 1, wherein: The heating portion has a plurality of regions where the light emitting elements are arranged. The radiation thermometers are respectively arranged at positions corresponding to the plurality of areas. The substrate processing apparatus includes a control device configured to control the output of the light emitting element for each of the plurality of regions based on the temperature of the substrate measured by the radiation thermometer.

7. The substrate processing apparatus according to claim 6, wherein: The plurality of regions correspond to different radial positions of the substrate.

8. The substrate processing apparatus according to claim 1, wherein: A plurality of the light emitting elements are arranged so as to irradiate the entire surface to be processed of the substrate with light.

9. The substrate processing apparatus according to claim 1, wherein: A lifting mechanism is provided for lifting and lowering the heating portion. When the processing liquid is supplied from the processing liquid supply portion to the substrate, the lifting mechanism positions the heating portion at a heating position closer to the substrate than the position when the substrate is carried in or out.

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