A fast switching diode circuit control method for high frequency signal processing

Abstract

The present application relates to the technical field of circuit control, and particularly relates to a fast switching diode circuit control method for high-frequency signal processing, comprising: acquiring working temperature data, reverse recovery time data, ringing decay time data and frequency spectrum data; determining whether the diode thermal stability is qualified based on the junction zone transient temperature rise index, and determining the rising slope of the anode driving voltage according to the difference; when the high-frequency signal between the two ends of the diode reaches a preset switching threshold, the driving circuit switches the diode from the on state to the off state; determining whether the diode switching responsiveness is qualified based on the recovery speed representation parameter, and determining the adjustment of the off driving voltage according to the relative difference; determining whether the stability of the circuit signal processing is up to the standard based on the harmonic distortion characteristic value, and determining the adjustment of the off rate or the initial value of the anode driving voltage in the on state according to the ratio. The present application improves the stability of the fast switching of the diode circuit.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of circuit control, and in particular to a fast switching diode circuit control method for high-frequency signal processing. BACKGROUND

[0002] In the field of high-frequency signal processing, fast switching diodes are widely used in 5G communication radio frequency switches, new energy vehicle power converters, industrial high-frequency inverters, etc. as key devices, and their performance directly affects the working efficiency, reliability and signal quality of the system. With the increase of high-frequency signal frequency, the diode needs to complete the fast switching of the on-off state within nanoseconds, which puts higher requirements on the driving control: on the one hand, it needs to suppress the risk of heat accumulation caused by high-frequency switching and avoid thermal runaway failure, and on the other hand, it needs to reduce the reverse recovery time and ring decay time, reduce the switching delay and signal distortion, and also needs to suppress the harmonic distortion caused by nonlinear characteristics to ensure signal integrity.

[0003] Chinese patent application publication No. CN118263972A discloses a switching circuit, comprising: an operational amplifier and a control circuit, the operational amplifier is used to determine the relative size of the output voltage of the first branch and the output voltage of the second branch, and the control circuit is used to perform on-off operation on the first switch to the fourth switch to switch the power supply from supplying power to the first branch to supplying power to the second branch under the condition that the power supply supplies power to the first branch according to the relative size of the output voltage of the first branch and the output voltage of the second branch and the turn-off and freewheeling of the body diode of the first switch and the body diode of the third switch, and during the switching process, the output path of the power supply is provided through the first branch or the second branch. Wherein, the first branch is connected with the power supply through the first switch and the second switch, and the second branch is connected with the power supply through the third switch and the fourth switch.

[0004] However, the prior art has the following problems: the diode has heat management loss and insufficient harmonic suppression in the high-frequency fast switching scene, resulting in large differences in switching stability of the diode circuit in different environments, thereby causing low fast switching stability of the diode circuit. SUMMARY

[0005] Therefore, the present application provides a fast switching diode circuit control method for high-frequency signal processing to overcome the problem of low fast switching stability of the diode circuit caused by the heat management loss and insufficient harmonic suppression of the diode in the high-frequency fast switching scene in the prior art.

[0006] To achieve the above purpose, the present application provides a fast switching diode circuit control method for high-frequency signal processing, comprising:

[0007] Obtaining working temperature data, reverse recovery time data, ring attenuation time data of the diode, and frequency spectrum data of the circuit output signal;

[0008] The initial control signal is input into the driving circuit with preset on driving parameters, the driving circuit switches the diode into the on state, so that the high-frequency signal passes through the diode circuit;

[0009] Based on the working temperature data, the junction transient temperature rise index is determined to determine whether the diode thermal stability is qualified, and the rising slope of the anode driving voltage is adjusted according to the difference between the junction transient temperature rise index and the preset junction transient temperature rise index;

[0010] When the high-frequency signal across the diode reaches the preset switching threshold, the switching control signal is input into the driving circuit with preset off driving parameters, and the driving circuit switches the diode from the on state to the off state;

[0011] Based on the reverse recovery time data, the recovery speed characteristic parameter is determined to determine whether the diode switching responsiveness is qualified, and the off driving voltage is adjusted according to the relative difference between the recovery speed characteristic parameter and the preset recovery speed characteristic parameter;

[0012] Based on the frequency spectrum data, the harmonic distortion characteristic value is determined to determine whether the stability of the circuit signal processing is up to standard, and the off rate or the initial value of the anode driving voltage in the on state is adjusted according to the ratio of the preset harmonic distortion characteristic value to the harmonic distortion characteristic value.

[0013] Further, the unqualified thermal stability of the diode is determined based on the comparison result that the junction transient temperature rise index is greater than the preset junction transient temperature rise index.

[0014] Further, the process of obtaining the junction transient temperature rise index includes:

[0015] The junction temperature is collected in real time by the thermocouple sensor attached to the diode shell, and the ambient temperature is collected by the temperature sensor;

[0016] The absolute value of the difference between the junction temperature and the ambient temperature is taken, denoted as the transient temperature rise;

[0017] The absolute value of the difference between the maximum allowed junction temperature and the ambient temperature is taken, denoted as the maximum temperature rise;

[0018] The junction transient temperature rise index is the ratio of the transient temperature rise to the maximum temperature rise.

[0019] Further, the process of adjusting the rising slope of the anode driving voltage includes:

[0020] The difference between the junction transient temperature rise index under the condition that the diode thermal stability is unqualified and the preset junction transient temperature rise index is calculated;

[0021] determining to decrease the rising slope by a first preset rising slope adjustment coefficient based on a comparison result that the difference is less than or equal to a preset difference;

[0022] determining to decrease the rising slope by a second preset rising slope adjustment coefficient based on a comparison result that the difference is greater than the preset difference.

[0023] Further, the switching response unqualification of the diode is determined based on a comparison result that the recovery speed characteristic parameter is greater than a preset recovery speed characteristic parameter, wherein,

[0024] The recovery speed characteristic parameter is determined according to a reverse recovery time, a ring decay time and a signal period.

[0025] Further, the process of adjusting the off-state driving voltage includes:

[0026] calculating a relative difference between the recovery speed characteristic parameter under the diode switching response unqualification condition and the preset recovery speed characteristic parameter;

[0027] determining a first preset off-state rate adjustment coefficient to increase the off-state driving voltage based on a comparison result that the relative difference is less than or equal to a preset relative difference;

[0028] determining a second preset off-state rate adjustment coefficient to increase the off-state driving voltage based on a comparison result that the relative difference is greater than the preset relative difference.

[0029] Further, the stability unqualification of the circuit signal processing is determined based on a comparison result that a harmonic distortion characteristic value is greater than a preset harmonic distortion characteristic value.

[0030] Further, the process of obtaining the harmonic distortion characteristic value includes:

[0031] performing fast Fourier transform processing on the signal to obtain an amplitude distribution of each frequency component, forming an amplitude spectrum;

[0032] extracting an amplitude of a fundamental wave from the amplitude spectrum, and simultaneously extracting amplitudes of each harmonic;

[0033] calculating a ratio of a square root of a sum of squares of all harmonic amplitudes to the amplitude of the fundamental wave to obtain the harmonic distortion characteristic value.

[0034] Further, the process of adjusting the off-state rate or the initial value of the anode driving voltage in the on-state includes:

[0035] calculating a ratio of a preset harmonic distortion characteristic value under the stability unqualification condition of the circuit signal processing to the harmonic distortion characteristic value;

[0036] determining to decrease the off-state rate based on a comparison result that the ratio is less than or equal to a preset ratio;

[0037] The reduced turn-off rate is determined according to the turn-off rate and a preset turn-off rate adjustment coefficient.

[0038] Further, the process of adjusting the initial value of the turn-off rate or the anode driving voltage in the on state further includes:

[0039] a ratio of a preset harmonic distortion eigenvalue to the harmonic distortion eigenvalue under a condition that stability of signal processing of the computing circuit is not up to standard;

[0040] determining to increase the initial value of the anode driving voltage based on a comparison result that the ratio is greater than a preset ratio;

[0041] The increased initial value of the anode driving voltage is determined according to the initial value of the anode driving voltage and a preset anode driving voltage adjustment coefficient.

[0042] Compared with the prior art, the beneficial effects of the present application are that the present application makes the diode enter the conduction state by inputting the initial conduction parameter to transmit the high-frequency signal, evaluates the thermal stability of the diode based on the working temperature data and adjusts the anode drive voltage rising slope when the thermal stability is unqualified, switches off when the high-frequency signal reaches the threshold, optimizes the switching responsiveness of the diode in combination with the reverse recovery time and the ringing recovery time, determines whether the stability of the circuit signal processing meets the standard according to the harmonic distortion characteristic value, dynamically adjusts the off rate or the initial gate voltage when it does not meet the standard, the temperature data reflects the cumulative heating risk of the diode in high-frequency switching, the reverse recovery time and the ringing decay time quantify the "tail" effect of the switching process, the frequency spectrum data reveals the interference degree of the nonlinear distortion on the subsequent circuit, ensures that the diode can remain stable under different working conditions, reduces the anode drive voltage rising slope when the junction transient temperature rise index exceeds the standard, slows down the temperature rise rate, increases the off drive voltage when the recovery speed is insufficient, accelerates the reverse current decay and suppresses the ringing, adjusts the off rate or the initial gate voltage when the harmonic distortion exceeds the standard, balances the switching speed and signal integrity, so that the diode circuit can adapt to changes in the external environment or internal state, avoids switching failure or performance degradation caused by mismatch between static parameters and actual demand, the product of the forward voltage drop and the current in the diode during high-frequency switching will cause the junction temperature to rise rapidly, and excessive temperature rise will cause thermal runaway, the thermal risk is quantified according to the junction transient temperature rise index, and the instantaneous power consumption is reduced by adjusting the anode drive voltage rising slope to suppress the temperature rise from the source, the reverse recovery time is too long, which will cause switching delay, and the ringing will introduce additional loss and electromagnetic interference, the responsiveness is evaluated according to the recovery speed characteristic parameter, the reverse driving ability is enhanced by adjusting the off drive voltage, and the carrier extraction is accelerated, the nonlinear characteristics of the diode will produce harmonic distortion at high frequency, which will cause the output signal to be distorted, the signal quality is quantified according to the harmonic distortion characteristic value, and the current decay rate is controlled by adjusting the off rate to reduce the high-frequency component, and the initial gate voltage is adjusted to optimize the volt-ampere characteristic during conduction, thereby improving the stability of the diode circuit for rapid switching.

[0043] Further, the application determines the thermal stability by the junction zone transient temperature rise index, when unqualified, reduces the anode driving voltage rising slope according to the difference between the junction zone transient temperature rise index and the preset junction zone transient temperature rise index, realizes dynamic inhibition of thermal risk, the junction zone transient temperature rise index converts the abstract temperature change into a normalized numerical index, more directly reflects whether the temperature rise exceeds the device tolerance range, avoids misjudgment caused by device individual difference or environmental temperature fluctuation, improves the objectivity of thermal stability evaluation, the anode driving voltage rising slope affects the current growth rate when the diode is turned on, by reducing the rising slope, accurately controlling the current rising rhythm in the conduction stage, reducing the junction heat accumulation, ensuring that the diode can stably complete multiple high-frequency switching, avoiding "thermal fatigue" failure caused by heat accumulation, significantly improving the reliability of the diode in long-term operation, thereby improving the stability of the diode circuit fast switching.

[0044] Further, the application completes high-frequency switching from conduction to cutoff through the driving circuit switching control signal, determines the diode switching responsiveness according to the recovery speed characteristic parameter, when unqualified, increases the off driving voltage according to the relative difference between the recovery speed characteristic parameter and the preset recovery speed characteristic parameter, optimizes the switching process, the recovery speed characteristic parameter integrates the two key dynamic parameters of reverse recovery time and ring decay time into a single value, avoiding the one-sidedness of single parameter evaluation, improving the accuracy of responsiveness optimization, the reverse recovery time and ring decay time of the diode are easily affected by factors such as junction temperature, load current, and environmental temperature, according to real-time monitoring and dynamic adjustment of the off driving voltage, the circuit can adapt to different working conditions, in high-temperature and high-load scenarios, the responsiveness decreases, the off driving voltage is increased to compensate for the attenuation of the carrier extraction capability, in low-temperature and light-load scenarios, the responsiveness is good, the relative difference is small, and a lower driving voltage is maintained to reduce energy loss, ensuring that the diode can still stably complete high-frequency switching in complex environments, too long reverse recovery time will cause the reverse current peak value to increase during the switching process, and slow ring decay will cause high-frequency oscillation, increasing the off driving voltage, on the one hand, it can enhance the control ability of the gate to the diode, accelerate the carrier extraction from the PN junction, shorten the reverse recovery time, and reduce the duration and peak value of the reverse current, on the other hand, a higher driving voltage can suppress the "residual effect" of the gate charge, accelerate the decay of the ring waveform, reduce the amplitude of voltage / current oscillation, and improve the signal integrity and long-term reliability of the circuit in high-frequency scenarios, thereby improving the stability of the diode circuit fast switching.

[0045] Further, the application determines signal stability by harmonic distortion characteristic value, when not meeting the standard, reduces the off rate or increases the gate initial voltage according to the ratio of the harmonic distortion characteristic value and the preset harmonic distortion characteristic value, balances harmonic suppression and switching performance by adjusting, reduces high frequency harmonic generation by reducing current change rate, increases gate initial voltage, optimizes the voltage-current characteristic when the diode is turned on, reduces the nonlinearity of the junction capacitance, avoids switching delay caused by blindly reducing the off rate to reduce distortion, or signal distortion caused by ignoring distortion to increase speed, ensures high stability of the signal in the switching process, adjusts the mode to suppress harmonics while ensuring that the basic characteristics of the diode are not affected, and ensures the long-term reliability of the circuit, thereby improving the stability of the fast switching diode circuit for high frequency signal processing. BRIEF DESCRIPTION OF DRAWINGS

[0046] Figure 1 Flow chart of the control method of the fast switching diode circuit for high frequency signal processing according to the embodiment of the application;

[0047] Figure 2 Flow chart of determining whether the thermal stability of the diode is qualified according to the embodiment of the application;

[0048] Figure 3 Flow chart of determining whether the switching responsiveness of the diode is qualified according to the embodiment of the application;

[0049] Figure 4 Flow chart of determining whether the stability of the signal processing of the circuit is qualified according to the embodiment of the application. DETAILED DESCRIPTION

[0050] In order to make the objects and advantages of the application clearer, the application will be further described below with reference to the embodiments. It should be understood that the specific embodiments described herein are only used to explain the application and do not limit the protection scope of the application.

[0051] The preferred embodiments of the application will be described below with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are only used to explain the technical principles of the application and do not limit the protection scope of the application.

[0052] It should be pointed out that the data in the embodiments are obtained by analyzing and evaluating the historical detection data and the corresponding historical detection results of the last three months before the detection according to the application. Those skilled in the art can understand that the determination method of the application for a single parameter can be to select the value with the highest proportion as the preset standard parameter according to the data distribution, to use weighted summation to obtain the value as the preset standard parameter, to substitute each historical data into a specific formula and to obtain the value by using the formula as the preset standard parameter, or other selection methods, as long as the application can clearly define different specific situations in the single determination process by obtaining the value.

[0053] Referring to Figure 1 As shown in the figure, it is a flow chart of the control method of the fast switching diode circuit for high frequency signal processing according to the embodiment of the application.

[0054] The control method of the fast switching diode circuit for high frequency signal processing according to the embodiment of the application comprises:

[0055] In step S1, the working temperature data, the reverse recovery time data, the ring attenuation time data and the frequency spectrum data of the circuit output signal of the diode are acquired.

[0056] In step S2, the initial control signal is input to the driving circuit with preset on driving parameters, the driving circuit switches the diode into the on state, so that the high frequency signal passes through the diode circuit.

[0057] In step S3, the junction transient temperature rise index is determined based on the working temperature data, so as to determine whether the thermal stability of the diode is qualified, and the rising slope of the anode driving voltage is determined according to the difference between the junction transient temperature rise index and the preset junction transient temperature rise index.

[0058] In step S4, when the high frequency signal between the two ends of the diode reaches the preset switching threshold value, the switching control signal is input to the driving circuit with preset off driving parameters, the driving circuit switches the diode from the on state to the off state.

[0059] In step S5, the recovery speed characteristic parameter is determined based on the reverse recovery time data, so as to determine whether the switching responsiveness of the diode is qualified, and the off driving voltage is adjusted according to the relative difference between the recovery speed characteristic parameter and the preset recovery speed characteristic parameter.

[0060] In step S6, the harmonic distortion characteristic value is determined based on the frequency spectrum data, so as to determine whether the stability of the circuit signal processing is up to the standard, and the off rate or the initial value of the anode driving voltage in the on state is adjusted according to the ratio between the preset harmonic distortion characteristic value and the harmonic distortion characteristic value.

[0061] Specifically, the application makes the diode enter the conduction state by inputting initial conduction parameters to transmit high-frequency signals, evaluates the thermal stability of the diode based on working temperature data and adjusts the rising slope of anode drive voltage when the thermal stability is unqualified, switches off when the high-frequency signal reaches a threshold, optimizes the switching responsiveness of the diode in combination with reverse recovery time and ringing recovery time, determines whether the stability of circuit signal processing is qualified according to a harmonic distortion characteristic value, dynamically adjusts the off rate or the initial voltage of the gate when the stability is unqualified, the temperature data reflects the cumulative heating risk of the diode in high-frequency switching, the reverse recovery time and the ringing decay time quantify the "tail" effect of the switching process, the spectrum data reveals the interference degree of nonlinear distortion on subsequent circuits, ensures that the diode can remain stable under different working conditions, reduces the rising slope of the anode drive voltage when the junction transient temperature rise index is unqualified, slows down the temperature rise rate, increases the off drive voltage when the recovery speed is insufficient, accelerates the reverse current decay and suppresses ringing, adjusts the off rate or the initial voltage of the gate when the harmonic distortion is unqualified, balances the switching speed and signal integrity, so that the diode circuit can adapt to changes in external environment or internal state, avoids switching failure or performance degradation caused by mismatch between static parameters and actual demand, the product of the forward voltage drop and the current in the diode in high-frequency switching will cause the junction temperature to rise rapidly, and excessive temperature rise will cause thermal runaway, the thermal risk is quantified according to the junction transient temperature rise index, and the instantaneous power consumption is reduced by adjusting the rising slope of the anode drive voltage, thereby inhibiting the temperature rise from the source, excessive reverse recovery time will cause switching delay, and ringing will introduce additional loss and electromagnetic interference, the responsiveness is evaluated according to the recovery speed characteristic value, the reverse driving capability is enhanced by adjusting the off drive voltage, and the carrier extraction is accelerated, the nonlinear characteristics of the diode will produce harmonic distortion under high frequency, causing output signal distortion, the signal quality is quantified according to the harmonic distortion characteristic value, and the current decay rate is controlled by adjusting the off rate to reduce high-frequency components, and the initial voltage of the gate is adjusted to optimize the volt-ampere characteristic during conduction, thereby improving the stability of the diode circuit in rapid switching.

[0062] In the embodiment of the application, the working temperature data is collected in real time by a thermocouple sensor attached to the diode housing, and the ambient temperature is collected by a temperature sensor; the reverse recovery time data is monitored by a high-frequency oscilloscope during the switching process from conduction to cutoff of the diode, and the time required for the reverse current to drop from the peak value to a preset threshold value is obtained, wherein the preset threshold value is 10% of the peak value; the ringing decay time data is measured by a high-frequency oscilloscope, and the time required for the ringing waveform to decay from the initial peak value to a preset amplitude is obtained, wherein the preset amplitude is 10% of the initial peak value; and the spectrum data is obtained by collecting the signals at the output end of the circuit by a spectrum analyzer and performing Fourier transform analysis on the signals to obtain the frequency and amplitude of each harmonic component in the signals.

[0063] In the embodiment of the application, the diode is a Schottky diode, and the specific type of the diode is not limited.

[0064] Specifically, the embodiment of the present application inputs the initial control signal with preset conduction driving parameters into the driving circuit, and the specific process that the driving circuit switches the diode into the conduction state to make the high-frequency signal pass through the diode circuit includes:

[0065] When the diode receives the conduction instruction, the upper tube of the driving stage is turned on, and the lower tube is turned off, the power supply voltage is applied to the anode of the diode through the driving resistor, and the forward driving current is formed; during the driving process, when the anode driving voltage reaches the preset conduction threshold value, at this time, the diode starts to enter the conduction state; continue to maintain the driving voltage until the anode current stabilizes to the load current value, and the tube voltage drop is reduced to the conduction voltage drop, and the conduction switching process is completed.

[0066] In the embodiment of the present application, the initial control signal is a digital pulse signal, which contains a conduction trigger instruction and timing synchronization information, the upper tube is a P-channel MOSFET, the lower tube is an N-channel MOSFET, and the preset conduction threshold value is a diode opening voltage, the value range of which is 3-5V.

[0067] In the embodiment of the present application, the preset conduction driving parameters include the initial value of the anode driving voltage, the value range of which is 3.5V-5V, preferably 4.5V, the rising slope of the anode driving voltage, the value range of which is 30-100V / ns, preferably 70V / ns, the driving resistor, the value range of which is 5Ω-20Ω, preferably 10Ω, the gate driving current, the value range of which is 80mA-300mA, preferably 150mA, the conduction voltage, the rising slope, the driving resistor and the gate driving current. The value range and the preferred value are determined according to the characteristics of the diode, and can also be determined according to the actual situation, which is not limited here and will not be described again.

[0068] Please refer to Figure 2 The figure is a flow chart for determining whether the diode thermal stability is qualified or not according to the embodiment of the present application.

[0069] Specifically, the embodiment of the present application determines whether the diode thermal stability is qualified or not according to the comparison result of the junction transient temperature rise index determined according to the working temperature data and the preset junction transient temperature rise index;

[0070] When the junction transient temperature rise index is less than or equal to the preset junction transient temperature rise index, it is determined that the diode thermal stability is qualified;

[0071] When the junction transient temperature rise index is greater than the preset junction transient temperature rise index, it is determined that the diode thermal stability is unqualified.

[0072] In the embodiment of the present application, the preset junction transient temperature rise index is in the range of [0.7, 0.8], and preferably 0.75, but the above value is not limited thereto, and the value can be adjusted according to actual needs by those skilled in the art.

[0073] In the embodiment of the present application, the process of obtaining the junction transient temperature rise index is as follows: the shell temperature is collected in real time by the thermocouple sensor attached to the diode shell, the junction temperature is calculated according to the junction-to-ambient thermal resistance of the diode and using the thermal resistance formula, and the ambient temperature is collected by the temperature sensor; the absolute value of the difference between the junction temperature and the ambient temperature is taken, denoted as the transient temperature rise; the absolute value of the difference between the maximum allowed junction temperature and the ambient temperature is taken, denoted as the maximum temperature rise; and the junction transient temperature rise index is the ratio of the transient temperature rise to the maximum temperature rise.

[0074] Specifically, under the condition that the diode thermal stability is determined to be unqualified, the present embodiment determines the rising slope of the anode driving voltage according to the comparison result of the difference between the junction transient temperature rise index and the preset junction transient temperature rise index and the preset difference value.

[0075] When the difference is less than or equal to the preset difference value, the rising slope is determined to be reduced to a corresponding value by a first preset rising slope adjustment coefficient 0.97.

[0076] When the difference is greater than the preset difference value, the rising slope is determined to be reduced to a corresponding value by a second preset rising slope adjustment coefficient 0.95.

[0077] The difference is the difference between the junction transient temperature rise index and the preset junction transient temperature rise index.

[0078] In the embodiment of the present application, the preset difference value is in the range of [0.3, 0.4], and preferably 0.35, but the above value is not limited thereto, and the value can be adjusted according to actual needs by those skilled in the art.

[0079] In the embodiment of the present application, the increased rising slope is the product of the rising slope and the preset rising slope adjustment coefficient, the preset rising slope adjustment coefficient includes a first preset rising slope adjustment coefficient with a value of 0.97 and a second preset rising slope adjustment coefficient with a value of 0.95, and the adjustment coefficient is set to control the adjustment range to ensure that the adjusted rising slope meets the actual needs and the adjustment range is not too large.

[0080] Specifically, the application determines the thermal stability by the junction zone transient temperature rise index, when unqualified, reduces the anode driving voltage rising slope according to the difference between the junction zone transient temperature rise index and the preset junction zone transient temperature rise index, realizes the dynamic inhibition of thermal risk, the junction zone transient temperature rise index converts the abstract temperature change into a normalized numerical index, more directly reflects whether the temperature rise exceeds the device tolerance range, avoids the misjudgment caused by the individual difference of the device or the environmental temperature fluctuation, improves the objectivity of the thermal stability evaluation, the anode driving voltage rising slope affects the current growth rate when the diode is turned on, by reducing the rising slope, accurately controls the current rising rhythm in the conduction stage, reduces the junction zone heat accumulation, ensures that the diode can stably complete multiple high-frequency switching, avoids the "thermal fatigue" failure caused by heat accumulation, significantly improves the reliability of the diode long-term operation, thereby improving the stability of the diode circuit fast switching.

[0081] Specifically, under the condition that the diode thermal stability is qualified, when the high-frequency signal between the two ends of the diode reaches the preset switching threshold, the switching control signal is input to the driving circuit with preset off driving parameters, and the driving circuit switches the diode from the on state to the off state, and the specific process includes:

[0082] The switching control signal is input to the driving circuit, the upper tube of the driving stage is cut off, the lower tube is turned on, the off driving voltage is applied to the anode of the diode through the driving resistor; the anode driving voltage starts to decrease from the conduction maintenance voltage with a preset slope, forming a reverse driving current; when the anode driving voltage decreases to the preset off threshold, the diode starts to enter the off transition state, and the anode current gradually decays; when the tube voltage drop reverses from the conduction voltage drop to the reverse blocking voltage, and the anode current decreases to the leakage current threshold, it is determined that the off process enters the stable stage; the switching process is completed, the diode enters the stable off state, and the high-frequency signal is blocked.

[0083] In the embodiment of the application, the preset off driving parameters include: an off driving voltage, the value range of which is 10V-20V, preferably 15V; an off rate, the value range of which is 10V / ns-50V / ns, preferably 30V / ns; and a gate voltage maintenance time, the value range of which is 0.5ns-5ns, preferably 3ns. The value range and the preferred value of the off driving voltage, the off rate and the gate voltage maintenance time are determined according to the characteristics of the diode, and can also be determined according to the actual situation, which is not limited here and will not be described again.

[0084] Please refer to Figure 3 It is a flow chart for determining whether the diode switching responsiveness is qualified.

[0085] Specifically, the application embodiment determines whether the diode switching responsiveness is qualified according to the comparison result of the recovery speed characteristic parameter determined according to the reverse recovery time data and the ring attenuation time data and the preset recovery speed characteristic parameter.

[0086] When the recovery speed characteristic parameter is less than or equal to the preset recovery speed characteristic parameter, it is determined that the diode switching responsiveness is qualified.

[0087] When the recovery speed characteristic parameter is greater than the preset recovery speed characteristic parameter, it is determined that the diode switching responsiveness is unqualified.

[0088] In the application embodiment, the preset recovery speed characteristic parameter value range is [0.65, 0.78], preferably 0.72, but the above value is not limited thereto, and the person skilled in the art can also adjust the value according to the actual needs.

[0089] In the application embodiment, the recovery speed characteristic parameter is the ratio of the reverse recovery time to the signal period multiplied by the weight 0.6 plus the ratio of the ring attenuation time to the signal period multiplied by the weight 0.4, wherein the signal period is the period of the high-frequency switch control signal output by the driving circuit.

[0090] Specifically, under the condition that the diode switching responsiveness is unqualified, the application embodiment determines to adjust the off driving voltage according to the comparison result of the relative difference between the recovery speed characteristic parameter and the preset recovery speed characteristic parameter and the preset relative difference.

[0091] When the relative difference is less than or equal to the preset relative difference, it is determined to increase the off driving voltage to the corresponding value by the first preset off voltage adjustment coefficient 1.1.

[0092] When the relative difference is greater than the preset relative difference, it is determined to increase the off driving voltage to the corresponding value by the second preset off voltage adjustment coefficient 1.2.

[0093] The relative difference is the relative difference between the recovery speed characteristic parameter and the preset recovery speed characteristic parameter.

[0094] In the application embodiment, the preset relative difference value range is [0.15, 0.25], preferably 0.2, but the above value is not limited thereto, and the person skilled in the art can also adjust the value according to the actual needs.

[0095] In the embodiment of the present application, the increased turn-off drive voltage is the product of the turn-off drive voltage and the preset turn-off voltage adjustment coefficient, the preset turn-off voltage adjustment coefficient includes a first preset turn-off voltage adjustment coefficient with a value of 1.1 and a second preset turn-off voltage adjustment coefficient with a value of 1.2, in order to ensure that the adjusted turn-off drive voltage meets the actual demand, the adjustment range should not be too large, so the adjustment coefficient is correspondingly set to control the adjustment range.

[0096] Specifically, the present application completes high-frequency switching from conduction to cutoff through the driving circuit switching control signal, determines the switching responsiveness of the diode according to the recovery speed characteristic parameter, when unqualified, increases the turn-off drive voltage according to the relative difference between the recovery speed characteristic parameter and the preset recovery speed characteristic parameter, optimizes the switching process, the recovery speed characteristic parameter integrates the two key dynamic parameters of reverse recovery time and ring decay time into a single value, avoiding the one-sidedness of single parameter evaluation, improving the accuracy of responsiveness optimization, the reverse recovery time and ring decay time of the diode are easily affected by factors such as junction temperature, load current and environmental temperature, according to real-time monitoring and dynamic adjustment of the turn-off drive voltage, the circuit can adapt to different working conditions, in high temperature and high load scenarios, the responsiveness decreases, the turn-off drive voltage is increased to compensate for the attenuation of the carrier extraction ability, in low temperature and light load scenarios, the responsiveness is good, the relative difference is small, and the driving voltage is kept low to reduce energy loss, ensuring that the diode can still complete high-frequency switching stably in complex environments, too long reverse recovery time will increase the reverse current peak value in the switching process, slow ring decay will cause high-frequency oscillation, increasing the turn-off drive voltage can enhance the control ability of the gate to the diode, accelerate the extraction of carriers from the PN junction, shorten the reverse recovery time, reduce the duration and peak value of the reverse current, on the other hand, higher drive voltage can suppress the "residual effect" of gate charge, accelerate the decay of ring waveform, reduce the amplitude of voltage / current oscillation, and improve the signal integrity and long-term reliability of the circuit in high-frequency scenarios, thereby improving the stability of the diode circuit fast switching.

[0097] Please refer to Figure 4 The figure is a flow chart for determining whether the stability of circuit signal processing meets the standard.

[0098] Specifically, the present application determines whether the stability of circuit signal processing meets the standard according to the comparison result of the harmonic distortion characteristic value determined according to the frequency spectrum data and the preset harmonic distortion characteristic value;

[0099] When the harmonic distortion characteristic value is less than or equal to the preset harmonic distortion characteristic value, it is determined that the stability of circuit signal processing meets the standard;

[0100] When the harmonic distortion characteristic value is greater than the preset harmonic distortion characteristic value, it is determined that the stability of circuit signal processing does not meet the standard.

[0101] In the embodiment of the present application, the preset harmonic distortion characteristic value is in the range of [0.1, 0.2], and preferably 0.15, but the above value is not limited thereto, and the value can be adjusted according to actual needs by those skilled in the art.

[0102] In the embodiment of the present application, the process of obtaining the harmonic distortion characteristic value is as follows: performing fast Fourier transform processing on the signal to obtain the amplitude distribution of each frequency component to form an amplitude spectrum; extracting the amplitude of the fundamental wave from the amplitude spectrum, and simultaneously extracting the amplitudes of each harmonic; and calculating the ratio of the square root of the sum of squares of all harmonic amplitudes to the amplitude of the fundamental wave to obtain the harmonic distortion characteristic value.

[0103] Specifically, under the condition that the stability of the circuit signal processing is not up to standard, the preset harmonic distortion characteristic value and the ratio of the harmonic distortion characteristic value to the preset ratio are compared to determine whether to adjust the turn-off rate or the initial value of the anode driving voltage in the on state.

[0104] When the ratio is less than or equal to the preset ratio, the turn-off rate is reduced to a corresponding value by a preset turn-off rate adjustment coefficient 0.91.

[0105] When the ratio is greater than the preset ratio, the initial value of the anode driving voltage is increased to a corresponding value by a preset anode driving voltage adjustment coefficient 1.07.

[0106] The preset ratio is the ratio of the preset harmonic distortion characteristic value to the harmonic distortion characteristic value.

[0107] In the embodiment of the present application, the preset ratio is in the range of [0.6, 0.8], and preferably 0.7, but the above value is not limited thereto, and the value can be adjusted according to actual needs by those skilled in the art.

[0108] In the embodiment of the present application, the reduced turn-off rate is the product of the turn-off rate and a preset turn-off rate adjustment coefficient, and the preset turn-off rate adjustment coefficient is 0.91; the increased initial value of the anode driving voltage is the product of the initial value of the anode driving voltage and a preset anode driving voltage adjustment coefficient, and the preset anode driving voltage adjustment coefficient is 1.07; in order to ensure that the adjusted turn-off rate and the initial value of the anode driving voltage meet actual needs, the adjustment amplitude should not be too large, so the adjustment coefficient is set to control the adjustment amplitude.

[0109] Specifically, the application determines signal stability by harmonic distortion characteristic value, when not meeting the standard, reduces the off rate or increases the gate initial voltage according to the ratio of the harmonic distortion characteristic value and the preset harmonic distortion characteristic value, balances harmonic suppression and switching performance by adjusting, reduces high frequency harmonic generation by reducing current change rate, increases gate initial voltage, optimizes the voltage-current characteristic when the diode is turned on, reduces the nonlinearity of the junction capacitance, avoids switching delay caused by blindly reducing the off rate to reduce distortion, or signal distortion caused by ignoring distortion to increase speed, ensures the high stability of the signal in the switching process, the adjustment method ensures that the basic characteristics of the diode are not affected while suppressing harmonics, guarantees the long-term reliability of the circuit, thereby improving the stability of the fast switching of the diode circuit.

[0110] So far, the technical solutions of the application have been described in combination with the preferred embodiments shown in the drawings, but those skilled in the art can easily understand that the protection scope of the application is obviously not limited to these specific embodiments. Those skilled in the art can make equivalent changes or replacements to the related technical features without departing from the principles of the application, and the technical solutions after the changes or replacements will fall within the protection scope of the application.

Claims

1. A fast switching diode circuit control method for high frequency signal processing, characterized by, The method comprises: acquiring working temperature data, reverse recovery time data, ring decay time data of the diode, and frequency spectrum data of a circuit output signal; inputting an initial control signal with preset on-driving parameters into a driving circuit, and switching the diode into an on state by the driving circuit to enable a high-frequency signal to pass through the diode circuit; determining a junction transient temperature rise index based on the working temperature data to determine whether the diode is thermally stable, and determining an increasing slope of an anode driving voltage based on a difference between the junction transient temperature rise index and a preset junction transient temperature rise index; when the high-frequency signal between the two ends of the diode reaches a preset switching threshold, inputting a switching control signal with preset off-driving parameters into the driving circuit, and switching the diode from the on state to an off state by the driving circuit; determining a recovery speed characteristic parameter based on the reverse recovery time data to determine whether the diode is switch-responsive, and adjusting the off-driving voltage based on a relative difference between the recovery speed characteristic parameter and a preset recovery speed characteristic parameter; the switch responsiveness of the diode is determined to be unqualified based on a comparison result that the recovery speed characteristic parameter is greater than the preset recovery speed characteristic parameter, wherein the recovery speed characteristic parameter is determined according to the reverse recovery time, the ring decay time, and the signal period; the process of adjusting the off-driving voltage comprises: calculating a relative difference between the recovery speed characteristic parameter and the preset recovery speed characteristic parameter under the condition that the switch responsiveness of the diode is unqualified; determining a first preset off-rate adjustment coefficient to increase the off-driving voltage based on a comparison result that the relative difference is less than or equal to a preset relative difference; determining a second preset off-rate adjustment coefficient to increase the off-driving voltage based on a comparison result that the relative difference is greater than the preset relative difference; determining a harmonic distortion characteristic value based on the frequency spectrum data to determine whether the stability of the circuit signal processing is up to standard, and determining an initial value of the off-rate or the anode driving voltage in the on state based on a ratio of a preset harmonic distortion characteristic value to the harmonic distortion characteristic value; the stability of the circuit signal processing is determined to be unqualified based on a comparison result that the harmonic distortion characteristic value is greater than the preset harmonic distortion characteristic value; the process of adjusting the off-rate or the initial value of the anode driving voltage in the on state comprises: calculating a ratio of the preset harmonic distortion characteristic value to the harmonic distortion characteristic value under the condition that the stability of the circuit signal processing is unqualified; determining to decrease the off-rate based on a comparison result that the ratio is less than or equal to a preset ratio; wherein the decreased off-rate is determined according to the off-rate and a preset off-rate adjustment coefficient; the process of adjusting the off-rate or the initial value of the anode driving voltage in the on state further comprises: calculating a ratio of the preset harmonic distortion characteristic value to the harmonic distortion characteristic value under the condition that the stability of the circuit signal processing is unqualified; determining to increase the initial value of the anode driving voltage based on a comparison result that the ratio is greater than a preset ratio; wherein the increased initial value of the anode driving voltage is determined according to the initial value of the anode driving voltage and a preset anode driving voltage adjustment coefficient.

2. The fast switching diode circuit control method for high frequency signal processing according to claim 1, characterized by, the thermal stability of the diode is determined to be unqualified based on a comparison result that the junction transient temperature rise index is greater than a preset junction transient temperature rise index.

3. The fast switching diode circuit control method for high frequency signal processing according to claim 2, characterized by, The process of obtaining the junction transient temperature rise index comprises: Real-time acquisition of the junction temperature through a thermocouple sensor attached to the diode shell and acquisition of the ambient temperature through a temperature sensor; Difference between the junction temperature and the ambient temperature is taken as the absolute value, denoted as the transient temperature rise; Difference between the maximum allowable junction temperature and the ambient temperature is taken as the absolute value, denoted as the maximum temperature rise; The junction transient temperature rise index is the ratio of the transient temperature rise to the maximum temperature rise.

4. The fast switching diode circuit control method for high frequency signal processing according to claim 3, characterized by, The process of adjusting the rising slope of the anode driving voltage comprises: Calculation of the difference between the junction transient temperature rise index under the condition of unqualified diode thermal stability and the preset junction transient temperature rise index; Determination of the reduction of the rising slope by the first preset rising slope adjustment coefficient based on the comparison result that the difference is less than or equal to the preset difference; Determination of the reduction of the rising slope by the second preset rising slope adjustment coefficient based on the comparison result that the difference is greater than the preset difference.

5. The fast switching diode circuit control method for high frequency signal processing according to claim 4, characterized by, The process of obtaining the harmonic distortion characteristic value comprises: Fast Fourier transform processing of the signal to obtain the amplitude distribution of each frequency component and form an amplitude spectrum; Extraction of the amplitude of the fundamental wave and the amplitudes of each harmonic from the amplitude spectrum; Calculation of the ratio of the square root of the sum of squares of all harmonic amplitudes to the amplitude of the fundamental wave to obtain the harmonic distortion characteristic value.

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