Display panel and display device

Abstract

The application discloses a display panel and a display device. The display panel comprises an array substrate, an isolation structure arranged on one side of the array substrate and provided with an isolation opening, and a light-emitting device arranged in the isolation opening and comprising a first electrode, a light-emitting material layer, a second electrode, a refractive index change layer and a subwavelength grating layer arranged in sequence in a direction away from the array substrate. The second electrode is electrically connected with the isolation structure, and the subwavelength grating layer comprises a plurality of grating structures arranged in a preset period. In the direction away from the array substrate, the refractive index of the refractive index change layer decreases, the refractive index change layer is used for inhibiting total reflection to increase the light extraction efficiency of the light-emitting device, and the subwavelength grating layer is used for adjusting the light-emitting direction of the light-emitting device. The display panel provided by the application can improve or avoid the color deviation problem of the display panel.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display panel and a display device. Background Technology

[0002] In recent years, OLED (Organic Light Emitting Diode) display panels have received increasing attention due to their advantages such as self-emission, low power consumption, high brightness, and high response speed. Currently, the pixel arrangement in OLED display panels suffers from problems such as high current density per subpixel, short lifespan, and high power consumption.

[0003] In the traditional OLED display panel manufacturing process, a fine metal mask (FMM) is typically used to pattern the light-emitting pixels. FMM technology is mature and has extensive mass production experience. However, FMM technology also suffers from limitations in precision and high cost. Fine metal mask-less technology eliminates the limitations of traditional OLED processes on display size, resolution, and other screen performance characteristics, offering advantages such as high performance, full-size display, and agile delivery. Patents CN118251982A, CN115666161A, CN116648095A, CN117062489A, CN118678742A, CN118785761A, CN115224220A, CN118678729A, CN118660529A, and CN118660589A describe relevant content regarding fine metal mask-less technology and are provided for reference.

[0004] The inventors of this application have discovered that display panels prepared using a non-fine metal mask technique suffer from problems such as deterioration of viewing angle bias and powdering at small viewing angles. Summary of the Invention

[0005] This application provides a display panel and a display device that can improve or avoid the viewing angle deviation problem of the display panel.

[0006] The first aspect of this application provides a display panel, including:

[0007] Array substrate;

[0008] An isolation structure is provided on one side of the array substrate and has an isolation opening;

[0009] A light-emitting device, disposed in the isolation opening, includes a first electrode, a light-emitting material layer, a second electrode, a refractive index change layer, and a subwavelength grating layer sequentially stacked in a direction away from the array substrate. The second electrode is electrically connected to the isolation structure, and the subwavelength grating layer includes a plurality of grating structures arranged in a preset period.

[0010] In the direction away from the array substrate, the refractive index of the refractive index change layer is reduced. The refractive index change layer is used to suppress total internal reflection to increase the light extraction efficiency of the light-emitting device. The subwavelength grating layer is used to adjust the light emission direction of the light-emitting device.

[0011] In the direction away from the array substrate, the refractive index of the refractive index changing layer decreases linearly or curvilinearly.

[0012] The refractive index range of the refractive index variation layer is 1.4 to 1.8.

[0013] The refractive index changing layer is in contact with the second electrode, and the subwavelength grating layer is in contact with the refractive index changing layer.

[0014] The refractive index changing layer comprises multiple sub-layers stacked together, and the refractive index of the multiple sub-layers decreases in the direction away from the array substrate.

[0015] The thickness of each sublayer ranges from 10 nm to 80 nm;

[0016] The material of the sublayer includes at least one of titanium dioxide, niobium pentoxide, and zinc sulfide; or, the material of the sublayer includes at least one of titanium oxide, magnesium fluoride, and aluminum oxide.

[0017] The number of sub-layers ranges from 5 to 10.

[0018] The total thickness of the refractive index changing layer ranges from 250 nm to 600 nm.

[0019] The thickness and refractive index of the sublayer satisfy the following conditions:

[0020]

[0021] in, The thickness of the sublayer, The refractive index of the sublayer is... The value range is 500~600nm.

[0022] In the direction away from the array substrate, the rate of decrease in the refractive index of the refractive index changing layer is equal in different wavelength bands.

[0023] In the direction away from the array substrate, the rate of decrease of the refractive index of the refractive index changing layer is not completely equal in different wavelength bands;

[0024] In the direction away from the array substrate, the rate of decrease of the refractive index of the refractive index change layer in the blue light band is greater than the rate of decrease of the refractive index of the refractive index change layer in the red light band.

[0025] In the direction away from the array substrate, the rate of decrease of the refractive index of the refractive index change layer in the blue light band is 20% to 40% faster than the rate of decrease of the refractive index of the refractive index change layer in the red light band.

[0026] The material of the subwavelength grating layer includes inorganic materials;

[0027] The inorganic material includes at least one of silicon nitride, silicon oxide, aluminum oxide, and titanium oxide.

[0028] The distance between the center points of two adjacent grating structures ranges from 200 to 400 nm, and / or the height of the grating structure ranges from 50 to 300 nm, and / or the width of the grating structure ranges from 100 to 200 nm, and / or the duty cycle of the subwavelength grating layer ranges from 0.3 to 0.7.

[0029] The grating structure is inclined relative to the refractive index changing layer, and the angle between the sidewall of the grating structure and the normal plane of the refractive index changing layer is in the range of 30° to 60°.

[0030] This also includes:

[0031] An encapsulation layer is disposed on the side of the grating structure opposite to the first electrode;

[0032] The refractive index of the encapsulation layer is in the range of 1.4 to 1.6;

[0033] The refractive index of the second electrode is in the range of 1.8 to 2.2;

[0034] The refractive index of the second electrode is greater than the maximum refractive index of the refractive index changing layer, and the refractive index of the encapsulation layer is less than the minimum refractive index of the refractive index changing layer;

[0035] The thickness of the second electrode ranges from 10 micrometers to 20 micrometers.

[0036] The isolation structure includes an isolation portion and a blocking portion arranged sequentially in a direction away from the array substrate, wherein the orthographic projection of the isolation portion on the array substrate is located within the orthographic projection of the blocking portion on the array substrate;

[0037] The isolation structure further includes a base located between the isolation portion and the array substrate, wherein the orthographic projection of the isolation portion on the array substrate is located within the orthographic projection of the base on the array substrate.

[0038] A second aspect of this application provides a display panel, the display panel comprising:

[0039] Array substrate;

[0040] A light-emitting device is disposed on one side of the array substrate, comprising a first electrode, a light-emitting material layer, a second electrode, a refractive index change layer, and a subwavelength grating layer sequentially stacked in a direction away from the array substrate, wherein the subwavelength grating layer comprises a plurality of grating structures arranged in a preset period.

[0041] In the direction away from the array substrate, the refractive index of the refractive index changing layer decreases, and the subwavelength grating layer is used to enhance the wide-viewing-angle light extraction efficiency of the light-emitting device.

[0042] This also includes:

[0043] An isolation structure is disposed on one side of the array substrate and has an isolation opening. The light-emitting device is disposed in the isolation opening, and the second electrode is electrically connected to the isolation structure.

[0044] The isolation structure includes an isolation portion and a blocking portion arranged sequentially in a direction away from the array substrate, wherein the orthographic projection of the isolation portion on the array substrate is located within the orthographic projection of the blocking portion on the array substrate;

[0045] The isolation structure further includes a base located between the isolation portion and the array substrate, wherein the orthographic projection of the isolation portion on the array substrate is located within the orthographic projection of the base on the array substrate.

[0046] In the direction away from the array substrate, the refractive index of the refractive index changing layer decreases linearly or curvilinearly.

[0047] The refractive index range of the refractive index variation layer is 1.4 to 1.8;

[0048] The refractive index changing layer is in contact with the second electrode, and the subwavelength grating layer is in contact with the refractive index changing layer.

[0049] The refractive index changing layer comprises multiple sub-layers stacked together, and the refractive index of the multiple sub-layers decreases in the direction away from the array substrate.

[0050] The thickness of each sublayer ranges from 10 nm to 80 nm;

[0051] The material of the sublayer includes at least one of titanium dioxide, niobium pentoxide, and zinc sulfide; or, the material of the sublayer includes at least one of titanium oxide, magnesium fluoride, and aluminum oxide.

[0052] The number of sub-layers ranges from 5 to 10.

[0053] The total thickness of the refractive index variation layer ranges from 250 nm to 600 nm.

[0054] The thickness and refractive index of the sublayer satisfy the following conditions:

[0055]

[0056] in, The thickness of the sublayer, The refractive index of the sublayer is... The value range is 500~600nm.

[0057] Specifically, in the direction away from the array substrate, the rate of decrease of the refractive index of the refractive index changing layer is equal in different wavelength bands; or, in the direction away from the array substrate, the rate of decrease of the refractive index of the refractive index changing layer is not completely equal in different wavelength bands.

[0058] The material of the subwavelength grating layer includes inorganic materials;

[0059] The inorganic material includes at least one of silicon nitride, silicon oxide, aluminum oxide, and titanium oxide;

[0060] The distance between the center points of two adjacent grating structures ranges from 200 to 400 nm, and / or the height of the grating structure ranges from 50 to 300 nm, and / or the width of the grating structure ranges from 100 to 200 nm, and / or the duty cycle of the subwavelength grating layer ranges from 0.3 to 0.7.

[0061] The grating structure is inclined relative to the refractive index changing layer, and the angle between the sidewall of the grating structure and the normal plane of the refractive index changing layer is in the range of 30°~60°.

[0062] This also includes:

[0063] An encapsulation layer is disposed on the side of the grating structure opposite to the first electrode;

[0064] The refractive index of the encapsulation layer is in the range of 1.4 to 1.6;

[0065] The refractive index of the second electrode is in the range of 1.8 to 2.2;

[0066] The refractive index of the second electrode is greater than the maximum refractive index of the refractive index changing layer, and the refractive index of the encapsulation layer is less than the minimum refractive index of the refractive index changing layer;

[0067] The thickness of the second electrode is less than or equal to 10 micrometers, or the thickness of the second electrode ranges from 10 micrometers to 20 micrometers.

[0068] A third aspect of this application provides a display device including the display panel described above.

[0069] The beneficial effects are as follows: This application achieves a gradual change in refractive index between the second electrode and the encapsulation layer through a refractive index change layer, which makes the light propagation path smooth and curved, increases the critical angle of total internal reflection, thereby suppressing total internal reflection, reducing the brightness decay of the display panel, and improving the light extraction efficiency of the display panel; while the subwavelength grating layer can change the light extraction direction of specific light rays from the display panel. Therefore, with the combination of the refractive index change layer improving the light extraction efficiency of the display panel and the subwavelength grating layer changing the light extraction direction of specific light rays from the display panel, this application can improve or eliminate the viewing angle distortion of the display panel. Attached Figure Description

[0070] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort, wherein:

[0071] Figure 1 This is a schematic diagram of the structure of a display panel according to one embodiment of this application;

[0072] Figure 2 This is one embodiment Figure 1 A schematic diagram of a partial film layer cross-section in the BB direction of a local area of ​​the display panel;

[0073] Figure 3 yes Figure 2 Schematic diagram of the structure of the array substrate;

[0074] Figure 4 This is a schematic diagram of the pixel circuit according to an embodiment of this application;

[0075] Figure 5 yes Figure 1 A top view of the central isolation structure;

[0076] Figure 6 In another embodiment Figure 1 A schematic diagram of a partial film layer cross-section in the BB direction of a local area of ​​the display panel;

[0077] Figure 7 In another embodiment Figure 1 A schematic diagram of a partial film layer cross-section in the BB direction of a local area of ​​the display panel;

[0078] Figure 8 In another embodiment Figure 1 A schematic diagram of a partial film layer cross-section in the BB direction of a local area of ​​the display panel;

[0079] Figure 9 In another embodiment Figure 1 A schematic diagram of a partial film layer cross-section in the BB direction of a local area of ​​the display panel;

[0080] Figure 10 This is a schematic diagram of the structure of the light-emitting material layer in a light-emitting device according to an embodiment of this application;

[0081] Figure 11 In another embodiment Figure 1 A schematic diagram of a partial film layer cross-section in the BB direction of a local area of ​​the display panel;

[0082] Figure 12 In another embodiment Figure 1 A schematic diagram of a partial film layer cross-section in the BB direction of a local area of ​​the display panel;

[0083] Figure 13 This is a schematic flowchart of an embodiment of the manufacturing method of the display panel of this application;

[0084] Figure 14 In another embodiment Figure 1 A schematic diagram of a partial film layer cross-section in the BB direction of a local area of ​​the display panel;

[0085] Figure 15 A schematic diagram of the structure of a light-emitting device according to another embodiment of this application;

[0086] Figure 16 yes Figure 15 Schematic diagram of the intermediate refractive index variation layer and the subwavelength grating layer;

[0087] Figure 17 yes Figure 15 Schematic diagram of the structure of the intermediate refractive index variation layer;

[0088] Figure 18 In another embodiment Figure 1 A schematic diagram of a partial film layer cross-section in the BB direction of a local area of ​​the display panel;

[0089] Figure 19 This is a schematic diagram of the structure of a display device according to an embodiment of this application. Detailed Implementation

[0090] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0091] It should be noted that the terms "first" and "second" in this application are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0092] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0093] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0094] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. It should be noted that, unless otherwise specified, different features in the embodiments of this application can be combined with each other.

[0095] For ease of understanding, the accompanying diagram shows the mutually orthogonal X-axis, Y-axis, and Z-axis. The direction along the X-axis is called the X-direction, the direction along the Y-axis is called the Y-direction, and the direction along the Z-axis is called the Z-direction. The Z-direction is the normal direction relative to the plane containing the X and Y directions. Furthermore, a view where various elements are observed parallel to the plane containing the X and Y directions is called a top view. Alternatively, the planes in the X and Y directions can be planes parallel to the display surface of the display panel, and the Z-direction can be a direction parallel to the thickness direction of the display panel.

[0096] For certain elements, terms like "above" or "overhead" are sometimes used when describing the position of an element in the Z direction, and "below" or "under" are used when describing the position of an element in the opposite direction. Furthermore, when using terms like "above," "overhead," "below," "under," or "relative" to define the positional relationship between two elements, this includes not only the state where the two elements are directly adjacent, but also the state where the two elements are separated by gaps or other elements. Additionally, terms like "first," "second," and "third" are used only for distinguishing descriptions and should not be interpreted as indicating or implying relative importance.

[0097] In Visionox's intelligent pixelation (ViP) technology, the existing AMOLED technology and processes can be used in the TFT control backplane. After the anode preparation is completed, differentiation is gradually achieved starting from the pixel definition layer (PDL) to form the isolation structure unique to ViP AMOLED. Then, the pixel preparation is carried out in the whole-surface evaporation and photolithography patterning steps to obtain the display body.

[0098] To facilitate understanding, the structure of the display panel based on VIP technology will be introduced first below. (See attached document.) Figure 1 The display panel can be an organic light-emitting diode (OLED) display panel or a quantum dot light-emitting diode (QLED) display panel. The display panel includes a display area AA with display function and a non-display area NA.

[0099] The display area AA of the display panel can be rectangular, square, circular, oval, or other shapes.

[0100] The display area AA includes a plurality of pixels PX arranged in the X and Y directions. Each pixel PX includes a plurality of sub-pixels SPX displaying different colors. In some embodiments, a pixel PX includes a first sub-pixel SPX1, a second sub-pixel SPX2, and a third sub-pixel SPX3. For example, the first sub-pixel SPX1 is a blue sub-pixel, the second sub-pixel SPX2 is a green sub-pixel SPX2, and the third sub-pixel SPX3 is a red sub-pixel SPX3. In some embodiments, in addition to sub-pixels SPX1, SPX2, and SPX3, a pixel PX also includes sub-pixels SPX that emit white or other colors of light.

[0101] A sub-pixel (SPX) includes a pixel circuit and a light-emitting device driven by the pixel circuit to emit light of the corresponding color. The first sub-pixel (SPX1) includes a first light-emitting device, the second sub-pixel (SPX2) includes a second light-emitting device, and the third sub-pixel (SPX3) includes a third light-emitting device. One pixel circuit drives at least one light-emitting device to emit light. For example, the display area AA includes a normal display area and a light-transmitting display area. The light-transmitting display area is a display area set according to a corresponding sensor and has light-transmitting properties, while the normal display area is a display area not set according to a corresponding sensor. In the normal display area, one pixel circuit drives one light-emitting device to emit light, and in the light-transmitting display area, one pixel circuit drives one or more light-emitting devices to emit light.

[0102] In one implementation, Figure 2 It shows Figure 1 A schematic diagram of a partial cross-sectional structure of the film layer in the BB direction of a local area of ​​the display panel. (Reference) Figure 2 The display panel includes an array substrate 11, an isolation structure 12, and multiple light-emitting devices 13.

[0103] refer to Figure 3 The array substrate 11 includes a pixel circuit layer and a planarization layer 19. The pixel circuit layer includes pixel circuits for driving the light-emitting device 13 to emit light. Figure 3The diagram illustrates a transistor 18 in a pixel circuit. A via is provided in the planarization layer 19, through which a first electrode 131 is electrically connected to the transistor 18 in the pixel circuit layer. Furthermore, the pixel circuit layer includes at least one insulating layer, which may include at least one of inorganic and organic layers. Additionally, the array substrate 11 includes scan lines providing the scan signal Scan and data lines providing the data signal Data for the pixel circuit. The array substrate 11 also includes a substrate on which the pixel circuit layer and planarization layer 19 are sequentially stacked. The substrate serves as a support in the display panel and can be either a flexible or rigid substrate. When the substrate is flexible, its material can be polyimide (PI), or it can be a multilayer structure with alternating organic and inorganic layers. For example, the substrate may include sequentially stacked inorganic, organic, and inorganic layers. In this case, the alternating organic and inorganic multilayer structure balances the flexibility and strength of the substrate, allowing the display panel to bend and resist breakage and deformation. When the substrate is rigid, its material can be glass or metal. This application does not limit the structure of the substrate.

[0104] refer to Figure 4 The pixel circuit includes a driving transistor T1 and a data transistor T2. One end of the driving transistor T1 is electrically connected to the first power supply VDD. The source of the data transistor T2 is connected to the data line that provides the data signal Data, and the gate of the data transistor T2 is connected to the scan line that provides the scan signal Scan. The drain of the data transistor T2 is connected to the gate of the driving transistor T1. The two ends of the storage capacitor C1 are respectively connected to the gate and the source of the driving transistor T1. The drain of the driving transistor T1 is connected to the light-emitting device 13. The end of the light-emitting device 13 that is not electrically connected to the driving transistor T1 is electrically connected to the second power supply VSS. Figure 4 This is one implementation of a pixel circuit; the pixel circuit described in this application is not limited to... Figure 4 The 2T1C pixel circuit shown can also be other pixel circuits, such as 7T1C, 8T1C pixel circuits, etc.

[0105] refer to Figure 2 and Figure 5An isolation structure 12 is located on one side of the array substrate 11 and encloses multiple isolation openings 12a, including multiple first isolation openings 12a1, multiple second isolation openings 12a2, and multiple third isolation openings 12a3. Multiple light-emitting devices 13 are located on one side of the array substrate 11 and include multiple first light-emitting devices 13a, multiple second light-emitting devices 13b, and multiple third light-emitting devices 13c. First light-emitting devices 13a are disposed corresponding to first isolation openings 12a1, second light-emitting devices 13b are disposed corresponding to second isolation openings 12a2, and third light-emitting devices 13c are disposed corresponding to third isolation openings 12a3. In one embodiment, one light-emitting device 13 is disposed corresponding to one isolation opening 12a. For example, one first light-emitting device 13a is disposed one-to-one with one first isolation opening 12a1, one second light-emitting device 13b is disposed one-to-one with one second isolation opening 12a2, and one third light-emitting device 13c is disposed one-to-one with one third isolation opening 12a3. At least a portion of the first light-emitting device 13a is disposed within a corresponding first isolation opening 12a1, at least a portion of the second light-emitting device 13b is disposed within a corresponding second isolation opening 12a2, and at least a portion of the third light-emitting device 13c is disposed within a corresponding third isolation opening 12a3. In another embodiment, multiple light-emitting devices 13 are correspondingly disposed with one isolation opening 12a; for example, multiple light-emitting devices with the same emission color are corresponding to one isolation opening 12a.

[0106] In one example, the isolation structure 12 includes an isolation portion 122 and a blocking portion 121 stacked along a direction away from the array substrate 11 (i.e., the Z direction). The width of the blocking portion 121 is greater than the width of the isolation portion 122, meaning that the orthographic projection of the isolation portion 122 onto the array substrate 11 lies within the orthographic projection of the blocking portion 121 onto the array substrate 11. Consequently, both ends of the blocking portion 121 protrude compared to the sides of the isolation portion 122, and this shape of the isolation structure 12 is also referred to as a pendant shape. The isolation portion 122 and the blocking portion 121 are made of different materials, and the etching rate of the blocking portion 121 is lower than that of the isolation portion 122. The material of the isolation portion 122 includes a conductive material, specifically including at least one of aluminum (Al) and aluminum alloys, wherein the aluminum alloy may include an aluminum-neodymium alloy (Al). ), aluminum-yttrium alloy ( or aluminum-silicon alloy At least one of the following. The blocking part 121 can be a single-layer structure or a multi-layer structure. If the blocking part 121 is a single-layer structure, the material of the blocking part 121 can include at least one of titanium, titanium nitride, molybdenum, tungsten, molybdenum-tungsten alloy, or molybdenum-niobium alloy. (Reference) Figure 6When the blocking part 121 has a multi-layer structure, one layer of the blocking part 121 is made of at least one of titanium, titanium nitride, molybdenum, tungsten, molybdenum-tungsten alloy or molybdenum-niobium alloy, and the other layer of the blocking part 121 may be made of conductive oxide or inorganic insulating material, such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0107] In some embodiments, reference Figure 6 as well as Figure 7 The isolation structure 12 may further include a base 123 located on the side of the isolation portion 122 near the array substrate 11. The base 123 protrudes relative to the isolation portion 122 in the direction toward the isolation opening 12a, and the orthographic projection of the isolation portion 122 on the array substrate 11 lies within the orthographic projection of the base 123 on the array substrate 11. The material of the base 123 may include at least one of molybdenum, titanium, titanium nitride (TiN), molybdenum-tungsten alloy (MoW), or molybdenum-niobium alloy (MoNb).

[0108] In one embodiment, the display panel may further include a pixel definition layer 17, on which an isolation structure 12 is disposed. The pixel definition layer 17 has pixel openings communicating with isolation openings 12a, which define the specific positions of the light-emitting device 13. Specifically, the pixel definition layer 17 has a first pixel opening communicating with a first isolation opening 12a1, a second pixel opening communicating with a second isolation opening 12a2, and a third pixel opening communicating with a third isolation opening 12a3. The areas of the orthographic projections of the first, second, and third pixel openings onto the array substrate 11 may be the same or different. The shapes of the orthographic projections of the pixel openings and the corresponding isolation openings 12a onto the array substrate 11 may be the same or different. Generally, the area of ​​the orthographic projection of the isolation opening 12a onto the array substrate 11 is larger than the area of ​​the orthographic projection of the pixel opening communicating with the isolation opening 12a onto the array substrate 11. The orthographic projections of the pixel openings of the light-emitting device 13 onto the array substrate 11 overlap with the orthographic projections of the isolation openings 12a onto the array substrate 11. The pixel definition layer 17 is made of an inorganic material, such as an inorganic insulating material formed by using at least one of silicon nitride, silicon oxide, and silicon oxynitride.

[0109] In one implementation, reference Figure 8 The pixel definition layer 17 includes multiple sub-layers, including a first sub-layer 171 and a second sub-layer 172 stacked sequentially along the direction away from the array substrate 11. That is, the pixel definition layer 17 can adopt a dual-layer design.

[0110] For example, the first sublayer 171 has better film-forming properties than the second sublayer 172. That is, under the same thickness conditions, the first sublayer 171 can better cover the stepped structure formed by the first electrode 131 than the second sublayer 172, without producing cracks. Conversely, to obtain the same stepped coverage effect, the thickness of the first sublayer 171 needs to be thinner than the thickness of the second sublayer 172. That is, the thickness requirement for the first sublayer 171 is relatively low, which is conducive to product thinning. In addition, the better film-forming properties are reflected in the better coverage of the formed film, which is denser and more conducive to the isolation of water vapor.

[0111] For example, the second sublayer 172 has better etching resistance than the first sublayer 171. Since the side of the pixel definition layer 17 facing away from the array substrate 11 will be etched during the manufacturing process of the display panel, by selecting a material with stronger etching resistance as the second sublayer 172, the etching resistance of the pixel definition layer 17 can be improved, and the reliability of the display panel can be further improved.

[0112] For example, the first sublayer 171 and the second sublayer 172 are made of different materials. For instance, the first sublayer 171 is made of silicon nitride, and the second sublayer 172 is made of silicon oxide.

[0113] For example, the thickness of the first sublayer 171 is greater than or equal to 1000 micrometers and less than or equal to 5000 micrometers. For instance, the thickness of the first sublayer 171 is 1000 micrometers, 2000 micrometers, 3000 micrometers, 4000 micrometers, 5000 micrometers, etc. For example, the thickness of the second sublayer 172 is greater than or equal to 500 micrometers and less than or equal to 3000 micrometers. For instance, the thickness of the second sublayer 172 is 500 micrometers, 1000 micrometers, 2000 micrometers, 3000 micrometers, etc.

[0114] In another embodiment, the isolation structure 12 is disposed within the groove of the pixel definition layer 17. Alternatively, the pixel definition layer 17 may not be provided in the display panel, and the isolation structure 12 may be disposed on one side of the array substrate 11, with the isolation structure 12 in contact with one side of the array substrate 11.

[0115] The first light-emitting device 13a, the second light-emitting device 13b, and the third light-emitting device 13c emit light of different colors. Each of the three devices includes a first electrode 131, a light-emitting material layer 132, and a second electrode 133 stacked together. The first electrode 131 is disposed on the array substrate 11, and a pixel definition layer 17 covers the end of the first electrode 131. A pixel opening is provided on the pixel definition layer 17, through which the first electrode 131 is exposed. The light-emitting material layer 132 of the first light-emitting device 13a, the second light-emitting device 13b, and the third light-emitting device 13c covers the sidewall of the pixel opening of the pixel definition layer 17 and the side of the pixel definition layer 17 facing away from the array substrate 11. Each light-emitting material layer 132 is located within the pixel opening and is in contact with the first electrode 131.

[0116] The second electrodes 133 of the first light-emitting device 13a, the second light-emitting device 13b, and the third light-emitting device 13c are respectively covered with corresponding light-emitting material layers 132. The second electrodes 133 are electrically connected to the isolation structure 12. For example, the second electrodes 133 are connected to the isolation portion 122 of the isolation structure 12, and / or, the second electrodes 133 are connected to the base portion 123 of the isolation structure 12. Specifically, when the isolation structure 12 includes a three-layer structure of a blocking portion 121, an isolation portion 122, and a base portion 123, the second electrodes 133 can extend to the side surface of the base portion 123 facing away from the array substrate 11 to connect with the base portion 123. In this case, the second electrodes 133 may or may not be connected to the isolation portion 122, for example, in… Figure 8 In this embodiment, the second electrode 133 is connected to the isolation portion 122, while... Figure 9 In this embodiment, the second electrode 133 is not connected to the isolation section 122.

[0117] The first electrode 131 can be an anode, and the second electrode 133 can be a cathode. The first electrode 131 of each light-emitting device 13 can be connected to the pixel circuit through a via, so that the pixel circuit drives the light-emitting device 13 to emit light.

[0118] The first electrode 131 may include a multilayer structure, such as a reflective layer and a pair of conductive oxide layers covering the upper and lower surfaces of the reflective layer, respectively. The reflective layer can be formed, for example, using silver, a metallic material with excellent light reflectivity. Each conductive oxide layer can be formed, for example, from a transparent conductive oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or IGZO (Indium Gallium Zinc Oxide). The second electrode 133 is formed, for example, from a metallic material such as an alloy of magnesium and silver (MgAg).

[0119] Figure 10 This is a schematic diagram of a light-emitting material layer 132 according to one embodiment of this application. The light-emitting material layer 132 of at least one of the first light-emitting device 13a, the second light-emitting device 13b, and the third light-emitting device 13c includes a hole injection layer HIL, a hole transport layer HTL, an electron blocking layer EBL, an organic material light-emitting layer EML, a hole blocking layer HBL, an electron transport layer ETL, and an electron injection layer EIL, stacked along a direction away from the array substrate 11 (i.e., the Z direction). The light-emitting material layer 132 may include one organic material light-emitting layer EML, or may include multiple organic material light-emitting layers EML.

[0120] In order for the light-emitting material layer 132 to emit light, a pixel voltage is provided to the first electrode 131 and a common voltage is provided to the second electrode 133, forming a potential difference between the first electrode 131 and the second electrode 133, causing the light-emitting material layer 132 disposed between the first electrode 131 and the second electrode 133 to emit light. In one embodiment, if a potential difference is formed between the first electrode 131 and the second electrode 133 of the first light-emitting device 13a, the organic material light-emitting layer EML of the light-emitting material layer 132 emits blue light; if a potential difference is formed between the first electrode 131 and the second electrode 133 of the second light-emitting device 13b, the organic material light-emitting layer EML of the light-emitting material layer 132 emits green light; and if a potential difference is formed between the first electrode 131 and the second electrode 133 of the third light-emitting device 13c, the organic material light-emitting layer EML of the light-emitting material layer 132 emits red light.

[0121] In this configuration, the pixel voltage of the first electrode 131 is provided by the pixel circuit, and the common voltage of the second electrode 133 is provided by the isolation structure 12. Specifically, the second electrode 133 is electrically connected to the isolation structure 12, and the common voltage is supplied to the second electrode 133 by providing the isolation structure 12. That is, the isolation structure 12 has the function of supplying a common voltage to the second electrode 133.

[0122] The display panel also includes an encapsulation layer, which includes a first encapsulation sublayer. The first encapsulation sublayer includes a plurality of encapsulation portions 14. The encapsulation portions 14 are located on the side of the second electrode 133 facing away from the array substrate 11, and extend through the sidewall of the isolation structure 12 to the side of the isolation structure 12 facing away from the array substrate 11. The plurality of encapsulation portions 14 include a plurality of first encapsulation portions 14a corresponding to a plurality of first light-emitting devices 13a, a plurality of second encapsulation portions 14b corresponding to a plurality of second light-emitting devices 13b, and a plurality of third encapsulation portions 14c corresponding to a plurality of third light-emitting devices 13c. The first encapsulation portions 14a are disposed on the side of the corresponding first light-emitting device 13a facing away from the array substrate 11, the second encapsulation portions 14b are disposed on the side of the corresponding second light-emitting device 13b facing away from the array substrate 11, and the third encapsulation portions 14c are disposed on the side of the corresponding third light-emitting device 13c facing away from the array substrate 11.

[0123] In one embodiment, see Figure 11 The encapsulation portion 14 includes a first segment 141 and a second segment 142 that are connected to each other. The first segment 141 is located inside the isolation opening 12a and is disposed on the side of the light-emitting device 130 away from the array substrate 11. The second segment 142 is located on the side of the isolation structure 12 facing the isolation opening 12a. The surface of the first segment 141 away from the array substrate 11 and the surface of the second segment 142 away from the isolation structure 12 are at least partially connected to each other to enclose and form a gap space 140.

[0124] In another embodiment, see Figure 9 The surface of the first segment 141 facing away from the array substrate 11 and the surface of the second segment 142 facing away from the isolation structure 12 may not be connected.

[0125] like Figure 12 As shown, the encapsulation layer further includes a second encapsulation sublayer 15 and a third encapsulation sublayer 16. The second encapsulation sublayer 15 covers the isolation structure 12 and the encapsulation portion 14, and the third encapsulation sublayer 16 covers the second encapsulation sublayer 15. Both the first encapsulation sublayer and the third encapsulation sublayer 16 are made of inorganic materials, including silicon nitride. silicon dioxide silicon oxynitride At least one of the following. The second encapsulation sublayer 15 is an organic insulating material, such as epoxy resin, acrylic resin, or other resin materials. The second encapsulation sublayer 15 and the third encapsulation sublayer 16 are continuously disposed at least over the entire display area AA, with a portion of them also disposed in the bezel area NA.

[0126] The display panel may also include at least one film layer such as a touch layer, polarizer, color filter substrate, and protective cover. This film layer may also be bonded to the display panel via an adhesive layer such as OCA (Optical Clear Adhesive).

[0127] The manufacturing method of the display panel according to the embodiments of this application will be described below.

[0128] refer to Figure 13 The manufacturing method of the display panel includes:

[0129] Step S11: Provide an array substrate 11.

[0130] Step S12: An isolation structure 12 is formed on one side of the array substrate 11. The isolation structure 12 is provided with a plurality of isolation openings 12a, including a plurality of first isolation openings 12a1, a plurality of second isolation openings 12a2 and a plurality of third isolation openings 12a3.

[0131] Step S13: Fabricate the film layer of the first light-emitting device 13a. The film layer of the first light-emitting device 13a includes a light-emitting material layer and a second electrode layer.

[0132] Step S14: Fabricate the first encapsulation layer of the first light-emitting device 13a. Since the film layer and the first encapsulation layer of the first light-emitting device 13a are both fabricated as a single layer, the film layer and the first encapsulation layer of the first light-emitting device 13a are present at the positions of the plurality of first isolation openings 12a1, the plurality of second isolation openings 12a2 and the plurality of third isolation openings 12a3.

[0133] Step S15: Etch away the film layer and first encapsulation layer of the first light-emitting device 13a at the locations of the plurality of second isolation openings 12a2 and the plurality of third isolation openings 12a3, thereby forming only the light-emitting material layer 132 and the second electrode 133 of the first light-emitting device 13a, as well as the first encapsulation portion 14a of the first light-emitting device 13a at the locations of the plurality of first isolation openings 12a1.

[0134] Based on the above steps S13 to S15, a light-emitting material layer 132 and a second electrode 133 of the second light-emitting device 13b and a second encapsulation portion 14b of the second light-emitting device 13b are respectively provided at the positions of multiple second isolation openings 12a2, and a light-emitting material layer 132 and a second electrode 133 of the third light-emitting device 13c and a third encapsulation portion 14c of the third light-emitting device 13c are respectively provided at the positions of multiple third isolation openings 12a3.

[0135] The above is a brief introduction to the structure of a display panel based on the technology of no fine mask.

[0136] Because in display panels based on fine maskless technology, the second electrode 133 in the light-emitting device 13 needs to be electrically connected to the isolation structure 12, the thickness of the second electrode 133 is usually larger (usually more than twice as thick). This results in a stronger microcavity effect in display panels based on fine maskless technology compared to ordinary display panels without the isolation structure 12, leading to a more severe viewing angle color shift problem and a pinking issue at small viewing angles. Therefore, please refer to... Figure 14 , Figure 15 and Figure 16 In another embodiment of this application, the light-emitting device 13 includes a first electrode 131, a light-emitting material layer 132, a second electrode 133, a refractive index change layer 134, and a subwavelength grating layer 135, which are sequentially stacked in the direction away from the array substrate 11. The second electrode 133 is electrically connected to the isolation structure 12. The subwavelength grating layer 135 includes a plurality of grating structures 1351 arranged in a preset period. In the direction from the first electrode 131 to the second electrode 133 (that is, in the direction away from the array substrate 11), the refractive index of the refractive index change layer 134 is reduced. The refractive index change layer 134 is used to increase the light extraction efficiency of the light-emitting device 13, and the subwavelength grating layer 135 is used to adjust the light emission direction of the light-emitting device 13.

[0137] Specifically, the subwavelength grating layer 135 includes a subwavelength grating structure 1351, the period of which (i.e., the grating period of the subwavelength grating layer 135) is smaller than the wavelength of light. Since the second electrode 133 is electrically connected to the isolation structure 12, the second electrode 133 needs to overlap with the isolation structure 12, resulting in a relatively large thickness for the second electrode 133. To avoid the deterioration of the viewing angle glare of the display panel caused by the large thickness of the second electrode 133, this application sets a refractive index change layer 134 and the subwavelength grating layer 135 to be mutually coupled and synergistic, improving or eliminating the viewing angle glare of the display panel. Specifically, since the refractive index of the second electrode 133 is usually higher than that of the encapsulation layer, the abrupt interface between the second electrode 133 and the encapsulation layer causes total internal reflection of large-angle light. Furthermore, when the first electrode 131 points towards the second electrode 135... In the direction of 33, the refractive index of the refractive index change layer 134 decreases, that is, the refractive index between the second electrode 133 and the encapsulation layer is gradually changed through the refractive index change layer 134, so that the light propagation path is smoothly curved, the critical angle of total internal reflection is increased, and thus total internal reflection can be suppressed, the brightness decay of the display panel is reduced, and the light emission efficiency of the display panel is improved. The subwavelength grating layer 135 can change the light emission direction of a specific light from the display panel. Therefore, with the combination of the refractive index change layer 134 improving the light emission efficiency of the display panel and the subwavelength grating layer 135 changing the light emission direction of a specific light from the display panel, this application can improve or eliminate the viewing angle distortion of the display panel.

[0138] In one embodiment, the refractive index of the encapsulation layer is in the range of 1.4 to 1.6, for example, the refractive index of the encapsulation layer is 1.4, 1.5 or 1.6, etc.

[0139] In one embodiment, the refractive index of the second electrode 133 is in the range of 1.8 to 2.2, for example, the refractive index of the second electrode 133 is 1.8, 1.9, 2.0, 2.1 or 2.2, etc.

[0140] In one embodiment, the refractive index of the second electrode 133 is greater than or equal to the maximum refractive index of the refractive index changing layer 134, and the refractive index of the encapsulation layer is less than or equal to the minimum refractive index of the refractive index changing layer 134.

[0141] Specifically, the above configuration allows the refractive index of the refractive index changing layer 134 to be between that of the second electrode 133 and the encapsulation layer, thereby enabling the refractive index changing layer 134 to achieve a gradual transition between the refractive index of the second electrode 133 and the encapsulation layer.

[0142] In one embodiment, the thickness of the second electrode 133 is in the range of 10 micrometers to 20 micrometers. For example, the thickness of the first electrode 131 is 10 micrometers, 15 micrometers, or 20 micrometers. This thickness range can prevent the second electrode 133 from being too thick and increasing the thickness of the display panel, and can also prevent the second electrode 133 from being too thin and unable to overlap with the isolation structure 12.

[0143] In one embodiment, the refractive index of the refractive index changing layer 134 decreases linearly in the direction from the first electrode 131 to the second electrode 133 (that is, in the direction away from the array substrate 11).

[0144] In another embodiment, the refractive index of the refractive index changing layer 134 decreases in a curve in the direction from the first electrode 131 to the second electrode 133 (that is, in the direction away from the array substrate 11).

[0145] In one embodiment, the refractive index of the refractive index changing layer 134 decreases linearly in the direction from the first electrode 131 to the second electrode 133 (that is, in the direction away from the array substrate 11).

[0146] In one embodiment, the refractive index range of the refractive index changing layer 134 is 1.4 to 1.8, meaning that the refractive index of the refractive index changing layer 134 decreases between 1.4 and 1.8 in the direction from the first electrode 131 to the second electrode 133. Specifically, considering that the refractive index of the second electrode 133 is typically around 1.8, while the refractive index of the encapsulation layer is typically around 1.4, the refractive index range of the refractive index changing layer 134 is set to 1.4 to 1.8 to achieve a gradual transition in refractive index between the second electrode 133 and the encapsulation layer.

[0147] In one embodiment, the refractive index change layer 134 is in contact with the second electrode 133, and the subwavelength grating layer 135 is in contact with the refractive index change layer 134. Specifically, no other film layer is disposed between the refractive index change layer 134 and the second electrode 133, and no other film layer is disposed between the subwavelength grating layer 135 and the refractive index change layer 134. As can be seen from the above analysis, since the refractive index change layer 134 can improve the light extraction efficiency of the display panel, in this embodiment, the refractive index change layer 134 is used to replace the light extraction layer (CPL) in the light-emitting device in the prior art, thereby avoiding the increase in the thickness of the display panel due to the presence of the refractive index change layer 134.

[0148] See Figure 17 The refractive index changing layer 134 includes multiple sublayers 1341 stacked together. In the direction from the first electrode 131 to the second electrode 133, the refractive index of the multiple sublayers 1341 decreases.

[0149] Specifically, in the direction from the first electrode 131 to the second electrode 133, the refractive index of the multilayer sublayer 1341 is reduced, thereby reducing the refractive index of the refractive index changing layer 134 in the direction from the first electrode 131 to the second electrode 133.

[0150] In one embodiment, the refractive index of a single sublayer 1341 can be equal everywhere.

[0151] In one embodiment, the thickness of each sublayer 1341 ranges from 10 nm to 80 nm.

[0152] Specifically, the thickness of sublayer 1341 can be set to 10nm, 20nm, 40nm, 50nm, 60nm, 70nm, and 80nm, etc. Setting the thickness range of sublayer 1341 to 10nm~80nm can avoid increasing the thickness of the display panel by making the thickness of sublayer 1341 too large, and also avoid making the thickness of sublayer 1341 too small so that it cannot play the role of gradual transition of refractive index.

[0153] In one embodiment, the thicknesses of the multiple sublayers 1341 are completely equal. In another embodiment, the thicknesses of the multiple sublayers 1341 are not completely equal; for example, the thickness of some sublayers 1341 ranges from 10 nm to 50 nm, while the thickness of some sublayers 1341 ranges from 20 nm to 80 nm. In short, the thickness of each sublayer 1341 can be set according to actual needs.

[0154] In one embodiment, the material of sublayer 1341 includes titanium dioxide and niobium pentoxide. Zinc sulfide At least one of them, or the material of sublayer 1341 includes titanium oxide. Magnesium fluoride Alumina At least one of the following. For example, the material of a portion of sublayer 1341 includes at least one of titanium dioxide, niobium pentoxide, and zinc sulfide, while the material of a portion of sublayer 1341 includes at least one of titanium oxide, magnesium fluoride, and aluminum oxide.

[0155] In one embodiment, the number of sublayers 1341 ranges from 5 to 10. For example, the refractive index changing layer 134 includes 5, 8, or 10 sublayers 1341. It should be noted that this application does not limit the number of sublayers 1341, and the number can be set according to actual needs.

[0156] In one embodiment, the total thickness of the refractive index changing layer 134 ranges from 250 nm to 600 nm.

[0157] Specifically, the total thickness of the refractive index changing layer 134 is 250nm, 300nm, 400nm, 500nm, or 600nm, etc. Setting the total thickness of the refractive index changing layer 134 in the range of 250nm to 600nm can avoid increasing the thickness of the display panel by making the refractive index changing layer 134 too thick, and also avoid making the refractive index changing layer 134 too thin, thus failing to achieve the function of gradual refractive index transition. It should be noted that this application does not impose a specific limitation on the total thickness of the refractive index changing layer 134, and it can be set according to requirements in different embodiments.

[0158] In one embodiment, for a single sublayer 1341, the thickness of sublayer 1341 and the refractive index of sublayer 1341 also satisfy the following conditions:

[0159]

[0160] in, The thickness of sublayer 1341, The refractive index of sublayer 1341, The value range is 500~600nm.

[0161] As can be seen from the above, the thickness of sublayer 1341 can be set according to its refractive index. Among other things, It can be any value between 500 and 600 nm, such as 500 nm, 550 nm, or 600 nm.

[0162] In one embodiment, the thicknesses of multiple sub-layers 1341 are combined to form a wide-angle antireflection film by the refractive index change layer 134, which enables the refractive index change layer 134 to suppress total internal reflection loss in the 450-650nm wavelength band.

[0163] In one embodiment, in the direction from the first electrode 131 to the second electrode 133 (that is, in the direction away from the array substrate 11), the rate of decrease in the refractive index of the refractive index change layer 134 is equal in different wavelength bands (wherein the rate of decrease in the refractive index of the refractive index change layer 134 refers to the magnitude of decrease in the refractive index change layer 134 per unit thickness). That is, in the direction from the first electrode 131 to the second electrode 133, the rate of decrease in the refractive index of the refractive index change layer 134 in the blue light band (450~480nm) is equal to the rate of decrease in the red light band (600~630nm).

[0164] In another embodiment, in the direction from the first electrode 131 to the second electrode 133, the rate of decrease in the refractive index of the refractive index changing layer 134 is not completely equal in different wavelength bands.

[0165] Specifically, the rate of decrease in refractive index of the refractive index-changing layer 134 can be completely unequal in different wavelength bands, or the rate of decrease in refractive index of the refractive index-changing layer 134 can be equal in some wavelength bands and unequal in others. For example, the rate of decrease in refractive index of the refractive index of the refractive index-changing layer 134 in the blue light band is not equal to the rate of decrease in the red light band. As another example, the rate of decrease in refractive index of the refractive index of the refractive index-changing layer 134 in the blue light band is equal to the rate of decrease in the yellow light band (550-582nm).

[0166] In one embodiment, in the direction from the first electrode 131 to the second electrode 133, the rate of decrease of the refractive index of the refractive index of the refractive index change layer 134 in the blue light band is greater than the rate of decrease of the refractive index of the refractive index change layer 134 in the red light band. In a specific application scenario, in the direction from the first electrode 131 to the second electrode 133, the rate of decrease of the refractive index of the refractive index change layer 134 in the blue light band is 20% to 40% faster than the rate of decrease of the refractive index of the refractive index change layer 134 in the red light band, for example, 20%, 30%, or 40% faster.

[0167] In one embodiment, the material of the subwavelength grating layer 135 includes inorganic materials.

[0168] In one embodiment, the inorganic material includes at least one of silicon nitride, silicon oxide, aluminum oxide, and titanium oxide. That is, the inorganic material may include one of silicon nitride, silicon oxide, aluminum oxide, and titanium oxide, or it may include two, three, or four of silicon nitride, silicon oxide, aluminum oxide, and titanium oxide.

[0169] See Figure 16 In one embodiment, the distance L between the center points of two adjacent grating structures 1351 ranges from 200 to 400 nm.

[0170] Specifically, the distance between the center points of two adjacent grating structures 1351 is the grating period of the subwavelength grating layer 135. The grating period of the subwavelength grating layer 135 can be set to 200nm, 250nm, 300nm, 350nm, or 400nm, etc.

[0171] Preferably, the grating period of the subwavelength grating layer 135 is 250nm~350nm, for example, the grating period of the subwavelength grating layer 135 is 250nm, 300nm or 350nm, etc.

[0172] See Figure 16 In one embodiment, the height H1 of the grating structure 1351 is in the range of 50~300nm, for example, the height H1 of the grating structure 1351 is 50nm, 100nm, 200nm or 300nm, etc.

[0173] See Figure 16 In one embodiment, the width W of the grating structure 1351 is in the range of 100~200nm. For example, the width W of the grating structure 1351 is 100nm, 150nm or 200nm.

[0174] In one embodiment, the duty cycle of the subwavelength grating layer 135 is in the range of 0.3 to 0.7.

[0175] Specifically, the duty cycle of the subwavelength grating layer 135 refers to the ratio of the width of the grating structure 1351 to the grating period within one grating period. The duty cycle of the subwavelength grating layer 135 can be 0.3, 0.5, 0.6, or 0.7, etc.

[0176] See Figure 16 In one embodiment, the grating structure 1351 is inclined relative to the refractive index change layer 134, and the angle θ between the sidewall of the grating structure 1351 and the normal plane of the refractive index change layer 134 is in the range of 30° to 60°.

[0177] Specifically, the angle θ between the sidewall of the grating structure 1351 and the normal plane of the refractive index changing layer 134 can be set to 30°, 40°, 50° or 60°, etc.

[0178] The tilt angle of the grating structure 1351 relative to the refractive index change layer 134 can break the symmetry, allowing the subwavelength grating layer 135 to deflect the main emission direction of blue light to the target viewing angle range, for example, deflecting the main emission direction of blue light to ±30°, aligning it with the angular distribution of red / green light, reducing color coordinate offset, improving or eliminating the viewing angle distortion problem of the display panel, and improving or eliminating the pinking problem of the display panel at small viewing angles.

[0179] In one embodiment, during the fabrication process, a refractive index variation layer 134 can be formed on the second electrode 133 using magnetron sputtering or atomic layer deposition (ALD) processes.

[0180] In one embodiment, during the fabrication process, a subwavelength grating layer 135 can be formed on the refractive index variation layer 134 using nanoimprinting or electron beam lithography.

[0181] In one embodiment, after forming the subwavelength grating layer 135, encapsulating adhesive can be spin-coated onto the subwavelength grating layer 135 and cured to obtain a flat encapsulation layer.

[0182] In the above embodiments, the structure of the display panel was described with the second electrode 133 electrically connected to the isolation structure 12. However, it should be noted that in other embodiments, the display panel may not have the isolation structure 12. In this case, the light-emitting device 13 in the display panel may also have a refractive index variation layer 134 and a subwavelength grating layer 135. For details, please refer to [reference needed]. Figure 18 In another embodiment of this application, the display panel includes an array substrate 11 and a light-emitting device 13.

[0183] The light-emitting device 13 is disposed on one side of the array substrate 11 and includes a first electrode 131, a light-emitting material layer 132, a second electrode 133, a refractive index change layer 134, and a subwavelength grating layer 135, which are sequentially stacked in the direction away from the array substrate 11. The subwavelength grating layer 135 includes a plurality of grating structures 1351 arranged in a preset period. In the direction away from the array substrate 11, the refractive index of the refractive index change layer 134 is reduced, and the subwavelength grating layer 135 is used to enhance the wide-viewing-angle light extraction efficiency of the light-emitting device 13.

[0184] Preferably, in the direction away from the array substrate 11, the refractive index of the refractive index changing layer 134 decreases linearly or curvilinearly.

[0185] Preferably, the refractive index of the refractive index variation layer 134 is in the range of 1.4 to 1.8.

[0186] Preferably, the refractive index change layer 134 is in contact with the second electrode 133, and the subwavelength grating layer 135 is in contact with the refractive index change layer 134.

[0187] Combination Figure 17 In one embodiment, the refractive index changing layer 134 includes multiple sublayers 1341 stacked together, and the refractive index of the multiple sublayers 1341 decreases in the direction away from the array substrate 11.

[0188] Preferably, the thickness of each sublayer 1341 ranges from 10 nm to 80 nm.

[0189] Preferably, the material of sublayer 1341 includes at least one of titanium dioxide, niobium pentoxide, and zinc sulfide, or the material of sublayer 1341 includes at least one of titanium oxide, magnesium fluoride, and aluminum oxide.

[0190] Preferably, the number of sub-layers 1341 ranges from 5 to 10.

[0191] Preferably, the total thickness of the refractive index changing layer 134 ranges from 250 nm to 600 nm.

[0192] Preferably, the thickness of sublayer 1341 and the refractive index of sublayer 1341 satisfy the following conditions:

[0193]

[0194] in, The thickness of sublayer 1341, The refractive index of sublayer 1341, The value range is 500~600nm.

[0195] In one embodiment, the rate of decrease in refractive index of the refractive index-changing layer 134 is equal in different wavelength bands in the direction away from the array substrate 11.

[0196] In another embodiment, the rate of decrease of the refractive index of the refractive index change layer 134 is not completely equal in different wavelength bands in the direction away from the array substrate 11.

[0197] Preferably, in the direction away from the array substrate 11, the rate of decrease of the refractive index of the refractive index change layer 134 in the blue light band is greater than the rate of decrease of the refractive index of the refractive index change layer 134 in the red light band.

[0198] Preferably, in the direction away from the array substrate 11, the rate of decrease of the refractive index of the refractive index change layer 134 in the blue light band is 20% to 40% faster than the rate of decrease of the refractive index of the refractive index change layer 134 in the red light band.

[0199] In one embodiment, the material of the subwavelength grating layer 135 includes inorganic materials.

[0200] Preferably, the inorganic material includes at least one of silicon nitride, silicon oxide, aluminum oxide, and titanium oxide.

[0201] Preferably, the distance between the center points of two adjacent grating structures 1351 is in the range of 200~400nm, and / or the height of the grating structure 1351 is in the range of 50~300nm, and / or the width of the grating structure 1351 is in the range of 100~200nm, and / or the duty cycle of the subwavelength grating layer 135 is in the range of 0.3~0.7.

[0202] Preferably, the grating structure 1351 is inclined relative to the refractive index change layer 134, and the angle between the sidewall of the grating structure 1351 and the normal plane of the refractive index change layer 134 is in the range of 30° to 60°.

[0203] In one embodiment, the display panel further includes an encapsulation layer disposed on the side of the grating structure 1351 opposite to the first electrode 131.

[0204] The encapsulation layer is used to encapsulate the light-emitting device 13, which helps to prevent external moisture and oxygen from affecting the light-emitting device 13. The encapsulation layer includes multiple inorganic encapsulation film layers and at least one organic encapsulation film layer stacked together. The at least one organic encapsulation film layer is disposed between the multiple inorganic encapsulation film layers, and the multiple inorganic encapsulation films form a closed space that seals the organic encapsulation film layer. It should be understood that the inorganic encapsulation film layer can minimize or completely prevent the penetration of moisture, oxygen and / or hydrogen into the array layer and the light-emitting layer. Therefore, as one embodiment, the inorganic encapsulation film layer and the organic encapsulation film layer can be stacked alternately. The inorganic encapsulation film layer can be set as the uppermost and lowermost layers of the encapsulation unit, and the outermost inorganic encapsulation film layer can completely cover the organic encapsulation film layer, thereby forming a barrier space that can block the entry of water and oxygen. In one embodiment, the encapsulation layer includes three encapsulation sub-layers stacked sequentially in the direction away from the array substrate 11. In the direction away from the array substrate 11, the three encapsulation sub-layers are an inorganic layer, an organic layer, and an inorganic layer, respectively.

[0205] Preferably, the refractive index of the encapsulation layer is in the range of 1.4 to 1.6.

[0206] Preferably, the refractive index of the second electrode 133 is in the range of 1.8 to 2.2.

[0207] Preferably, the refractive index of the second electrode 133 is greater than the maximum refractive index of the refractive index change layer 134, and the refractive index of the encapsulation layer is less than the minimum refractive index of the refractive index change layer 134.

[0208] When the display panel does not have the isolation structure 12, since the second electrode 133 does not need to be electrically connected to the isolation structure 12, the thickness of the second electrode 133 does not need to be too large. For example, the thickness of the second electrode 133 can be less than or equal to 10 micrometers. Of course, when the isolation structure 12 is not provided, the thickness of the second electrode 133 can be increased to reduce the transmission impedance. In this case, the thickness of the second electrode 133 can be set to a range of 10 micrometers to 20 micrometers.

[0209] In addition, this application also separately protects the light-emitting device 13 in any of the above embodiments, that is, the light-emitting device 13 includes a first electrode 131, a light-emitting material layer 132, a second electrode 133, a refractive index change layer 134 and a subwavelength grating layer 135 stacked in sequence. The subwavelength grating layer 135 includes a plurality of grating structures 1351 arranged in a preset period. In the direction from the first electrode 131 to the second electrode 133, the refractive index of the refractive index change layer 134 is reduced. The refractive index change layer 134 is used to suppress total internal reflection to increase the light extraction efficiency of the light-emitting device 13. The subwavelength grating layer 135 is used to adjust the light emission direction of the light-emitting device 13.

[0210] Preferably, in the direction from the first electrode 131 to the second electrode 133, the refractive index of the refractive index changing layer 134 decreases linearly or curvilinearly.

[0211] Preferably, the refractive index of the refractive index variation layer 134 is in the range of 1.4 to 1.8.

[0212] Preferably, the refractive index change layer 134 is in contact with the second electrode 133, and the subwavelength grating layer 135 is in contact with the refractive index change layer 134.

[0213] Preferably, the refractive index changing layer 134 includes multiple sublayers 1341 stacked together, and the refractive index of the multiple sublayers 1341 decreases in the direction away from the array substrate 11.

[0214] Preferably, the thickness of sublayer 1341 ranges from 10 nm to 80 nm.

[0215] Preferably, the material of sublayer 1341 includes at least one of titanium dioxide, niobium pentoxide, and zinc sulfide, or the material of sublayer 1341 includes at least one of titanium oxide, magnesium fluoride, and aluminum oxide.

[0216] Preferably, the number of sub-layers 1341 ranges from 5 to 10.

[0217] Preferably, the total thickness of the refractive index changing layer 134 ranges from 250 nm to 600 nm.

[0218] Preferably, the thickness of sublayer 1341 and the refractive index of sublayer 1341 satisfy the following conditions:

[0219]

[0220] in, The thickness of sublayer 1341, The refractive index of sublayer 1341, The value range is 500~600nm.

[0221] Preferably, in the direction from the first electrode 131 to the second electrode 133, the rate of decrease in refractive index of the refractive index change layer 134 is equal in different wavelength bands.

[0222] Preferably, in the direction from the first electrode 131 to the second electrode 133, the rate of decrease in refractive index of the refractive index changing layer 134 is not completely equal in different wavelength bands.

[0223] Preferably, in the direction from the first electrode 131 to the second electrode 133, the rate of decrease of the refractive index of the refractive index change layer 134 in the blue light band is greater than the rate of decrease of the refractive index of the refractive index change layer 134 in the red light band.

[0224] Preferably, in the direction from the first electrode 131 to the second electrode 133, the rate of decrease of the refractive index of the refractive index change layer 134 in the blue light band is 20% to 40% faster than the rate of decrease of the refractive index of the refractive index change layer 134 in the red light band.

[0225] Preferably, the material of the subwavelength grating layer 135 includes at least one of inorganic materials and metal oxides.

[0226] Preferably, the inorganic material includes at least one of silicon nitride and silicon oxide.

[0227] Preferably, the metal oxide includes at least one of aluminum oxide and titanium oxide.

[0228] Preferably, the distance between the center points of two adjacent grating structures 1351 is in the range of 200~400nm, and / or the height of the grating structure 1351 is in the range of 50~300nm, and / or the width of the grating structure 1351 is in the range of 100~200nm, and / or the duty cycle of the subwavelength grating layer 135 is in the range of 0.3~0.7.

[0229] Preferably, the grating structure 1351 is inclined relative to the refractive index change layer 134, and the angle between the sidewall of the grating structure 1351 and the normal plane of the refractive index change layer 134 is in the range of 30° to 60°.

[0230] Preferably, the light-emitting device 13 further includes an encapsulation layer disposed on the side of the grating structure 1351 opposite to the first electrode 131.

[0231] Preferably, the refractive index of the encapsulation layer is in the range of 1.4 to 1.6.

[0232] Preferably, the refractive index of the second electrode 133 is in the range of 1.8 to 2.2.

[0233] Preferably, the refractive index of the second electrode 133 is greater than the maximum refractive index of the refractive index change layer 134, and the refractive index of the encapsulation layer is less than the minimum refractive index of the refractive index change layer 134.

[0234] Preferably, the thickness of the second electrode 133 is in the range of 10 micrometers to 20 micrometers, or the thickness of the second electrode 133 is less than or equal to 10 micrometers.

[0235] In some possible implementations, refer to Figure 19 This application also provides a display device 200, which includes a display panel 100, the structure of which is the same as that of the display panel in any of the above embodiments. The display device 200 may include a device with image processing capabilities, such as a mobile phone, desktop computer, laptop computer, tablet computer, in-vehicle display, wearable device, etc. Because this display device includes the display panel 100 of this application, the reliability of the display device 200 is higher.

[0236] In summary, this application achieves a gradual change in refractive index between the second electrode 133 and the encapsulation layer through the refractive index change layer 134, which makes the light propagation path smoothly curved, increases the critical angle of total internal reflection, thereby suppressing total internal reflection, reducing the brightness decay of the display panel, and improving the light extraction efficiency of the display panel. The subwavelength grating layer 135 can change the light extraction direction of specific light rays from the display panel. Therefore, with the combination of the refractive index change layer 134 improving the light extraction efficiency of the display panel and the subwavelength grating layer 135 changing the light extraction direction of specific light rays from the display panel, this application can improve or eliminate the viewing angle distortion of the display panel.

[0237] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A display panel, characterized by, The display panel comprises an array substrate, an isolation structure arranged on one side of the array substrate and provided with an isolation opening, and a light-emitting device arranged in the isolation opening and comprising a first electrode, a light-emitting material layer, a second electrode, a refractive index change layer and a sub-wavelength grating layer arranged in sequence in a direction away from the array substrate, wherein the second electrode is electrically connected to the isolation structure, and the sub-wavelength grating layer comprises a plurality of grating structures arranged at a preset period. In the direction away from the array substrate, the refractive index of the refractive index change layer decreases, the refractive index change layer is used for inhibiting total reflection to increase the light extraction efficiency of the light-emitting device, and the sub-wavelength grating layer is used for adjusting the light-emitting direction of the light-emitting device. In the direction away from the array substrate, the refractive index of the refractive index change layer decreases linearly or nonlinearly. The refractive index of the refractive index change layer ranges from 1.4 to 1.

8. The refractive index change layer is in contact with the second electrode, and the sub-wavelength grating layer is in contact with the refractive index change layer.

2. The display panel of claim 1, wherein, The refractive index change layer comprises a plurality of sub-layers arranged in layers, and the refractive index of the sub-layers decreases in the direction away from the array substrate. The thickness of each sub-layer ranges from 10 nm to 80 nm.

3. The display panel of claim 1, wherein, The material of the sub-layers comprises at least one of titanium dioxide, niobium pentoxide and zinc sulfide, or the material of the sub-layers comprises at least one of titanium oxide, magnesium fluoride and aluminum oxide.

4. The display panel of claim 1, wherein, The number of the sub-layers ranges from 5 to 10. The total thickness of the refractive index change layer ranges from 250 nm to 600 nm. The thickness of the sub-layers and the refractive index of the sub-layers satisfy the following condition: In the direction away from the array substrate, the decreasing rate of the refractive index of the refractive index change layer is equal in different wave bands.

7. The display panel of claim 1, wherein 5. The display panel of claim 4, wherein, In the direction away from the array substrate, the decreasing rate of the refractive index of the refractive index change layer in the blue light wave band is 20% to 40% faster than the decreasing rate of the refractive index of the refractive index change layer in the red light wave band. wherein is the thickness of the sub-layer, is the refractive index of the sub-layer, has a value in the range of 500-600 nm.

6. The display panel of claim 1, wherein, The material of the sub-wavelength grating layer comprises an inorganic material. The inorganic material comprises at least one of silicon nitride, silicon oxide, aluminum oxide and titanium oxide. The distance between the center points of two adjacent grating structures ranges from 200 nm to 400 nm, the height of the grating structure ranges from 50 nm to 300 nm, the width of the grating structure ranges from 100 nm to 200 nm, and the duty cycle of the sub-wavelength grating layer ranges from 0.3 to 0.

7.

8. The display panel of claim 1, wherein, The grating structure is arranged obliquely relative to the refractive index change layer, and the included angle between the sidewall of the grating structure and the normal plane of the refractive index change layer ranges from 30° to 60°. The display panel further comprises 9. The display panel of claim 1, wherein, ​ 10. The display panel of claim 1, wherein, ​ 11. The display panel of claim 1, wherein, ​ An encapsulation layer is arranged on the side of the grating structure away from the first electrode; The refractive index of the encapsulation layer ranges from 1.4 to 1.6; The refractive index of the second electrode ranges from 1.8 to 2.2; The refractive index of the second electrode is greater than the maximum refractive index of the refractive index changing layer, and the refractive index of the encapsulation layer is less than the minimum refractive index of the refractive index changing layer.

12. The display panel of claim 1, wherein The isolation structure comprises an isolation portion and a blocking portion arranged in sequence in the direction away from the array substrate, and the orthogonal projection of the isolation portion on the array substrate is located within the orthogonal projection of the blocking portion on the array substrate; The isolation structure further comprises a base portion between the isolation portion and the array substrate, and the orthogonal projection of the isolation portion on the array substrate is located within the orthogonal projection of the base portion on the array substrate.

13. A display panel, characterized by Comprise: An array substrate; A light emitting device arranged on the side of the array substrate, comprising a first electrode, a light emitting material layer, a second electrode, a refractive index changing layer and a sub-wavelength grating layer arranged in sequence in the direction away from the array substrate, and the sub-wavelength grating layer comprises a plurality of grating structures arranged in a predetermined period; In the direction away from the array substrate, the refractive index of the refractive index changing layer decreases, and the sub-wavelength grating layer is used to enhance the wide viewing angle light extraction efficiency of the light emitting device, and in the direction away from the array substrate, the decreasing rate of the refractive index of the refractive index changing layer is not completely equal at different wave bands, and in the direction away from the array substrate, the decreasing rate of the refractive index of the refractive index changing layer in the blue light wave band is greater than the decreasing rate of the refractive index of the refractive index changing layer in the red light wave band.

14. The display panel of claim 13, wherein, Further comprise: An isolation structure arranged on the side of the array substrate and provided with an isolation opening, the light emitting device is arranged in the isolation opening, and the second electrode is electrically connected with the isolation structure; The isolation structure comprises an isolation portion and a blocking portion arranged in sequence in the direction away from the array substrate, and the orthogonal projection of the isolation portion on the array substrate is located within the orthogonal projection of the blocking portion on the array substrate; The isolation structure further comprises a base portion between the isolation portion and the array substrate, and the orthogonal projection of the isolation portion on the array substrate is located within the orthogonal projection of the base portion on the array substrate.

15. The display panel of claim 13, wherein, In the direction away from the array substrate, the refractive index of the refractive index changing layer decreases linearly or nonlinearly; The refractive index of the refractive index changing layer ranges from 1.4 to 1.8; The refractive index changing layer is in contact with the second electrode, and the sub-wavelength grating layer is in contact with the refractive index changing layer.

16. The display panel of claim 13, wherein The refractive index changing layer comprises a plurality of sub-layers arranged in sequence, and the refractive index of the plurality of sub-layers decreases in the direction away from the array substrate; The thickness of each sub-layer ranges from 10 nm to 80 nm; The material of the sub-layer comprises at least one of titanium dioxide, diniobium pentoxide, zinc sulfide, or the material of the sub-layer comprises at least one of titanium oxide, magnesium fluoride, aluminum oxide; The number of the sub-layers ranges from 5 to 10; The total thickness of the refractive index change layer ranges from 250 nm to 600 nm; The thickness of the sub-layer and the refractive index of the sub-layer satisfy the following condition: wherein is the thickness of the sub-layer, is the refractive index of the sub-layer, has a value in the range of 500-600 nm.

17. The display panel of claim 13, wherein, The material of the sub-wavelength grating layer comprises an inorganic material; The inorganic material comprises at least one of silicon nitride, silicon oxide, aluminum oxide, titanium oxide; The distance between the center points of two adjacent grating structures ranges from 200 nm to 400 nm, and / or the height of the grating structure ranges from 50 nm to 300 nm, and / or the width of the grating structure ranges from 100 nm to 200 nm, and / or the duty cycle of the sub-wavelength grating layer ranges from 0.3 to 0.7; The grating structure is arranged obliquely relative to the refractive index change layer, and the included angle between the sidewall of the grating structure and the normal plane of the refractive index change layer ranges from 30° to 60°.

18. The display panel of claim 13, wherein, Further comprising: An encapsulation layer arranged on the side of the grating structure away from the first electrode; The refractive index of the encapsulation layer ranges from 1.4 to 1.6; The refractive index of the second electrode ranges from 1.8 to 2.2; The refractive index of the second electrode is greater than the maximum refractive index of the refractive index change layer, and the refractive index of the encapsulation layer is less than the minimum refractive index of the refractive index change layer.

19. A display device comprising: A display panel comprising any one of claims 1 to 18.

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