Substrate processing apparatus, gas supply unit, substrate processing method, semiconductor device manufacturing method, and program

Abstract

The present invention is provided with: a processing chamber for processing a substrate; a first gas supply path that supplies a first gas to the substrate from a side of the processing chamber; and a first gas introduction port that introduces a first gas into a site at a predetermined temperature in the first gas supply path.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, a gas supply unit, a substrate processing method, and a method and program for manufacturing a semiconductor device. Background Art

[0002] A batch-type vertical processing system is a substrate processing apparatus used in one step of the semiconductor device manufacturing process. A batch-type vertical processing apparatus is configured to accommodate multiple substrates (wafers) supported on substrate supports (wafer boats) within a processing furnace, and simultaneously process the substrates (e.g., film formation or heat treatment) while supplying gas in an in-plane direction to the substrates within the processing furnace (e.g., Japanese Patent Application Publication No. 2006-173531). Summary of the Invention

[0003] (Problems to be solved by the invention)

[0004] The present invention provides a technology capable of suppressing the generation of particles in a gas supply path.

[0005] (Technical means to solve the problem)

[0006] According to one embodiment of the present invention, a technique is provided comprising:

[0007] a processing chamber for processing a substrate;

[0008] a first gas supply path for supplying a first gas to the substrate from a side of the processing chamber; and

[0009] The first gas inlet is provided at a location of a predetermined temperature in the first gas supply path and introduces the first gas into the first gas supply path.

[0010] Effects of the Invention

[0011] According to one embodiment of the present invention, generation of particles in a gas supply path can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a longitudinal sectional view showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present invention.

[0013] Figure 2 It is a horizontal cross-sectional view showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present invention.

[0014] Figure 3 This is a longitudinal sectional view taken along a gas flow, showing a gas supply structure and a schematic configuration example of a nozzle of a substrate processing apparatus according to one embodiment of the present invention.

[0015] Figure 4This is a longitudinal cross-sectional view of the nozzle cut at a right angle to the airflow.

[0016] Figure 5 This is a perspective view showing a gas rectifying member of a substrate processing apparatus according to one embodiment of the present invention.

[0017] Figure 6 This is a longitudinal sectional view showing a substrate support member according to one embodiment of the present invention.

[0018] Figure 7A This is an explanatory diagram for explaining gases that can be used in one embodiment of the present invention.

[0019] Figure 7B This is an explanatory diagram for explaining gases that can be used in one embodiment of the present invention.

[0020] Figure 7C This is an explanatory diagram for explaining gases that can be used in one embodiment of the present invention.

[0021] Figure 8 This is an explanatory diagram for explaining a controller of a substrate processing apparatus according to one embodiment of the present invention.

[0022] Figure 9 This is a flowchart illustrating a substrate processing flow according to one embodiment of the present invention. DETAILED DESCRIPTION

[0023] The following describes an embodiment of the present invention with reference to the accompanying drawings. The drawings used in the following description are schematic diagrams, and the dimensional relationships and ratios of the various elements shown in the drawings do not necessarily correspond to actual dimensions. Furthermore, the dimensional relationships and ratios of the various elements shown in the drawings do not necessarily correspond to each other. In the drawings, arrow U indicates the vertical upward direction, and arrow D indicates the vertical downward direction.

[0024] (1) Configuration of substrate processing apparatus

[0025] use Figures 1 to 9 A schematic configuration of a substrate processing apparatus 100 according to one embodiment of the present invention will be described. Figure 1 is a side sectional view of the substrate processing apparatus 100, Figure 2 for Figure 1 Cross-sectional view of α-α'. Figure 3 This is an explanatory diagram for explaining the relationship among the gas supply structure 212 , the gas supply unit 227 , the reaction tube 210 , and the heater 211 .

[0026] Next, we will explain the specific content. Figure 1 As shown, the substrate processing apparatus 100 includes a housing 201 , and the housing 201 includes a reaction tube storage chamber 206 and a transfer chamber 217 . The reaction tube storage chamber 206 is disposed above the transfer chamber 217 .

[0027] The reaction tube storage chamber 206 includes a vertically extending cylindrical reaction tube 210, a heater 211 disposed on the outer periphery of the reaction tube 210 as a heating unit (e.g., a furnace), a gas supply structure 212 and a gas supply unit 227 for supplying gas, and a gas exhaust structure 213 for exhausting gas. The reaction tube 210 is also referred to herein as a processing chamber, and the space within the reaction tube 210 is also referred to as a processing space. The reaction tube 210 can accommodate a substrate support 300, described later. The gas supply unit serves as a housing for a gas flow regulating member 500, described later.

[0028] The heater 211 is provided with a resistance heater (not shown) on the inner surface opposite to the reaction tube 210, and a heat insulating portion (not shown) is provided to surround them. Thus, the outer side of the heater 211, that is, the side not opposite to the reaction tube 210, is less affected by heat. The resistance heater of the heater 211 is electrically connected to a heater control portion (not shown). The heater control portion can control the on / off function and the heating temperature of the heater 211. The heater 211 can be heated to a temperature at which the gas described later can be thermally decomposed. In addition, the heater 211 is also referred to as the processing chamber heating portion.

[0029] like Figures 1 to 3 As shown, the gas supply structure 212 and the gas supply unit 227 are located upstream of the reaction tube 210 in the direction of gas flow. Gas is supplied horizontally from the gas supply structure 212 and the gas supply unit 227 to the reaction tube 210. The gas exhaust structure 213 is located downstream of the reaction tube 210 in the direction of gas flow. The gas in the reaction tube 210 is exhausted from the gas exhaust structure 213. The gas supply structure 212 and the gas supply unit 227 are detachably fixed.

[0030] Furthermore, a downstream side rectifying section 215 is provided between the reaction tube 210 and the gas exhaust structure 213 to rectify the gas flow discharged from the reaction tube 210. The lower end of the reaction tube 210 is supported by a manifold 216.

[0031] The reaction tube 210, gas supply unit 227, and downstream rectifying unit 215 are continuous structures formed of materials such as quartz or SiC. These components are composed of heat-permeable components that transmit the heat radiated from the heater 211. The heat from the heater 211 heats the substrate S and gas used in the semiconductor device.

[0032] The gas supply structure 212 is provided inside the gas supply portion 227 when viewed from the reaction tube 210. Figure 2As shown, the gas supply structure 212 includes a distribution section 222 that can communicate with a gas supply pipe 251, described later, and a distribution section 224 that can communicate with a gas supply pipe 261. The distribution sections 222 and 224 are vertically elongated passages that distribute gas to the gas supply sections 227 and are therefore also referred to as gas distribution sections.

[0033] like Figure 2 As shown, the gas supply structure 212 is provided with distribution parts 222 on both sides in the width direction and two distribution parts 224 on the central side.

[0034] like Figure 2 and Figure 3 As shown, a downstream portion of a gas supply pipe 251, an example of a gas supply system, is inserted into the distribution section 222. A downstream portion of a gas supply pipe 261, an example of a gas supply system, is inserted into the distribution section 224. Multiple holes 251A for ejecting gas are formed at intervals in the vertical direction on the side of the gas supply pipe 251. Multiple holes 261A for ejecting gas are formed at intervals in the vertical direction on the side of the gas supply pipe 261. Holes 251A and 261A can also be referred to as openings.

[0035] like Figures 2 to 4 As shown, on the downstream side of the gas supply structure 212, multiple cylindrical gas supply units 227 are stacked in a direction perpendicular to the substrate S, described later. The gas supply units 227 are arranged in multiple stages in the height direction of the substrate holder, described later. The multiple gas supply units 227 can also be referred to as a single gas supply unit 227 having its interior vertically divided into multiple flow paths.

[0036] Different types of gases are supplied to the gas supply pipe 251 and the gas supply pipe 261 as will be described later.

[0037] like Figure 2 and Figure 3 As shown, on the side surface of the gas supply portion 227 of the gas supply structure 212, blowout holes 222c as an example of a second gas inlet port connected to the distribution portion 222 are arranged at intervals in the vertical direction, and blowout holes 224c connected to the distribution portion 224 are arranged at intervals in the vertical direction.

[0038] (Structure of Gas Supply Section)

[0039] like Figure 2As shown, the gas supply unit 227 is provided on the side of the reaction tube 210. The gas supply unit 227 comprises a straight portion 227A extending linearly from the gas supply structure 212 toward the reaction tube 210, and an expanded diameter portion 227B provided on the reaction tube 210 side of the straight portion 227A and gradually expanding toward the reaction tube 210. The gas supply unit 227 can also be referred to as a gas ejection member for ejecting gas.

[0040] like Figures 2 to 4 As shown, the gas supply unit 227 as an example of a receiving unit contains Figure 5 The gas rectifying member 500 is shown as an example of a gas supply unit. The gas rectifying member 500 is constructed using a single horizontal plate-shaped member 502 and a plurality of vertical plate-shaped members 504, serving as an example of partition walls. In this embodiment, three of these members are positioned vertically above the horizontal plate-shaped member 502, and three are positioned vertically below the horizontal plate-shaped member 502, totaling six members. Eight gas inlet ports 506 are formed within the gas supply unit 227. The gas inlet ports 506 are passages through which gas passes. The portion of the gas supply unit 227 where the gas rectifying member 500 is positioned may be referred to as a gas rectifying portion.

[0041] Furthermore, the two gas inlet portions 506 on the center side of the gas supply portion 227 in the width direction are an example of the first gas supply path of the present invention, and the two gas inlet portions 506 on both sides of the gas supply portion 227 in the width direction are an example of the second gas supply path of the present invention.

[0042] In addition, in the substrate processing apparatus 100 of the present embodiment, a certain gap exists between the gas rectifying member 500 and the gas supply structure 212 , but there may be a case where this gap does not exist.

[0043] like Figures 2 to 4 As shown, inside the two gas inlet sections 506 at the center in the width direction of each gas supply section 227, a gas introduction nozzle 530 formed of a pipe member as an example of a first gas introduction section is arranged along the longitudinal direction of the gas introduction section 506. The gas introduction nozzle 530 is an example of a nozzle of the present invention.

[0044] One end of the gas introduction nozzle 530 is inserted and fixed to the gas supply structure 212 and communicates with the distribution section 224. The gas supplied by the gas supply pipe 261 is ejected from the other end (in other words, the downstream front end or gas outlet; hereinafter referred to as the front end) 530A into the interior of the gas introduction section 506. The gas introduction nozzle 530 is formed of a material such as quartz or SiC. The front end 530A of the gas introduction nozzle 530 is an example of the first gas introduction port of the present invention. The front end 530A of the gas introduction nozzle 530 may also be referred to as the gas outlet.

[0045] Thus, if Figure 2 As shown, the distance between the tip 530A as an example of the first gas inlet and the substrate S is shorter than the distance between the blowout hole 222 c of the gas supply structure 212 as an example of the second gas inlet and the substrate S.

[0046] The gas supply unit 227 housing the gas flow regulating member 500 has a downstream portion positioned inwardly relative to the outer periphery of the heater 211. Consequently, the downstream portion of the gas supply unit and the downstream gas flow regulating member 500 are heated by the heater 211 to a high temperature, while the gas supply unit 227 positioned outwardly relative to the outer periphery of the heater 211 is cooled to a low temperature.

[0047] In this embodiment, the tip 530A of the gas introduction nozzle 530 is positioned at a location on the gas supply unit 227 where the temperature is maintained at a predetermined temperature. The predetermined temperature here refers to a temperature at which the first element-containing gas (nitrogen-containing gas in this embodiment) serving as the first gas does not adhere to the gas supply unit 227 or the gas flow regulating member 500. In other words, the tip 530A of the gas introduction nozzle 530 is positioned at a location where the temperature is maintained at a high enough level that the first element-containing gas (nitrogen-containing gas in this embodiment) does not adhere to the gas supply unit 227 or the gas flow regulating member 500.

[0048] like Figure 2 As shown, the vertical plate-shaped member 504 extends linearly along the longitudinal direction of the gas rectifying member 500 .

[0049] like Figure 4 As shown, in this embodiment, the cross-sectional areas (areas when viewed in a cross section perpendicular to the gas flow) of the gas introduction parts 506 arranged in the straight portion 227A of the gas supply part 227 are substantially the same.

[0050] like Figure 2 、 Figure 3 and Figure 5 As shown, two convex portions 502A are formed at intervals on the side ends of the horizontal plate-shaped member 502 on both sides in the width direction. The convex portions 502A abut against the inner wall surface of the gas supply portion 227, thereby forming a gap between the side ends of the horizontal plate-shaped member 502 and the inner wall surface of the gas supply portion 227. Figure 4 As shown, a communication portion 518 having a width Wa is formed. The communication portion 518 only needs to be partially provided between the side end of the horizontal plate-shaped member 502 and the inner wall surface of the gas supply portion 227. The number of protrusions 502A provided on the side end of the horizontal plate-shaped member 502 may be one, or three or more.

[0051] Two convex portions 504A are formed at intervals on the side ends of the longitudinal plate-shaped member 504 on both sides in the width direction. The convex portions 504A abut against the inner wall surface of the gas supply portion 227, thereby forming a gap between the side ends of the longitudinal plate-shaped member 504 and the inner wall surface of the gas supply portion 227. Figure 4 As shown, a communication portion 520 having a width Wb is formed. The communication portion 520 only needs to be partially provided between the side end of the vertical plate-shaped member 504 and the inner wall surface of the gas supply portion 227. The number of protrusions 504A provided on the side end of the vertical plate-shaped member 504 may be one, or three or more.

[0052] In this manner, the gas flow regulating member 500 is housed within the gas supply unit 227, and the four gas inlet units 506 are arranged horizontally in a horizontally aligned manner. In the middle of the longitudinal direction, a portion of the gas passing through one gas inlet unit 506 can flow through the connecting portion 520 from one gas inlet unit 506 adjacent in the horizontal direction to another gas inlet unit 506. Furthermore, a portion of the gas passing through another gas inlet unit 506 can flow through the connecting portion 520 from another gas inlet unit 506 adjacent in the horizontal direction to one gas inlet unit 506.

[0053] Furthermore, with respect to the two gas inlet portions 506 adjacent in the vertical direction on both sides of the width direction of the gas supply portion, a portion of the gas passing through the upper gas inlet portion 506 can be introduced from the upper gas inlet portion 506 to the lower gas inlet portion 506 via the connecting portion 518 of the horizontal plate-shaped member 502. Furthermore, a portion of the gas passing through the lower gas inlet portion 506 can be introduced from the lower gas inlet portion 506 to the upper gas inlet portion 506 via the connecting portion 518.

[0054] For example, if gas is supplied to the gas inlet portions 506 on both sides of the width direction of the gas supply portion 227, gas can be ejected toward the substrate S from the gas inlet portions 506 on both sides of the width direction, and gas can also be ejected toward the substrate S from the two gas inlet portions 506 on the inner side of the width direction. Since the gas inlet portions 506 are partially connected through the connecting portion 520, forming a wide flow symmetrically on the left and right, the gas can flow in a wide flow symmetrically on the left and right with the substrate S as the center. Figure 2 The arrows in the figure indicate the flow of gas.

[0055] Therefore, the gas supplied from the gas supply structure 212 and the gas introduction nozzle 530 into the gas supply portion 227 can be regulated by the gas rectifying member 500 and supplied to the surface of the substrate S.

[0056] Furthermore, the communicating portion 518 and the communicating portion 520 may also be referred to as a gap or a slit.

[0057] (Downstream side rectification section)

[0058] like Figure 1 As shown, the downstream side rectifying portion 215 is configured such that when the substrate S is supported on the substrate support 300 , its top is higher than the position of the uppermost substrate S, and its bottom is lower than the position of the lowermost substrate S arranged on the substrate support 300 .

[0059] The downstream rectifying section 215 includes a frame 231 and a partition plate 232. The portion of the partition plate 232 facing the substrate S extends in the horizontal direction so as to be at least larger than the diameter of the substrate S. The horizontal direction herein refers to the direction of the side wall of the frame 231. Furthermore, a plurality of partition plates 232 are arranged in the vertical direction. The partition plates 232 are fixed to the side walls of the frame 231 and are configured so that the gas does not flow beyond the partition plates 232 and move to the adjacent area below or above. By preventing the gas from flowing beyond the partition plates 232, the airflow described later can be reliably formed. A flange 233 is provided on the side of the frame 231 that contacts the gas exhaust structure 213.

[0060] The partition plates 232 are continuous, non-porous structures. The center positions between the partition plates 232 correspond to the positions of the substrates S, and are located at positions corresponding to the vertical center positions of the gas supply sections 227. With this structure, the gas supplied by each gas supply section 227 forms an airflow through the substrates S and the partition plates 232, as indicated by the arrows in the figure. In this case, the partition plates 232 are continuous, non-porous structures extending horizontally. This structure allows for uniform pressure loss of the gas exhausted from each substrate S. Consequently, vertical flow of the gas passing through each substrate S is suppressed, and the gas flow is formed horizontally toward the gas exhaust structure 213.

[0061] By setting a partition plate 232 corresponding to the gas supply part 227, the pressure loss can be made uniform in the vertical direction upstream and downstream of each substrate S, thereby suppressing the vertical flow applied to the gas supply part 227, the substrate S, and the partition plate 232, and can effectively form a horizontal airflow.

[0062] The gas exhaust structure 213 is provided downstream of the downstream rectifying section 215. The gas exhaust structure 213 is mainly composed of a frame 241 and a gas exhaust pipe connection section 242. The frame 241 is provided with a flange 243 on the downstream rectifying section 215 side.

[0063] The gas exhaust structure 213 is connected to the space of the downstream side rectifying section 215. The frame 231 and the frame 241 are highly continuous. The top of the frame 231 is configured to be at the same height as the top of the frame 241, and the bottom of the frame 231 is configured to be at the same height as the bottom of the frame 241.

[0064] The gas passing through the downstream side rectifying portion 215 is exhausted from the exhaust hole 244. At this time, since the gas exhaust structure does not have a structure like a partition plate, an air flow including a vertical direction is formed toward the exhaust hole 244.

[0065] The transfer chamber 217 is provided below the reaction tube 210 via a manifold 216. In the transfer chamber 217, a substrate S is horizontally placed (e.g., mounted) on a substrate support (hereinafter sometimes referred to as a wafer boat) 300 by a vacuum transfer robot (not shown), or the substrate S is removed from the substrate support 300 by the vacuum transfer robot.

[0066] like Figure 1 As shown, inside the transfer chamber 217, Figure 6 The substrate support 300, the partition support portion 310, and the vertical direction driving mechanism 400 constituting a first driving unit for driving the substrate support 300 and the partition support portion 310 (collectively referred to as a substrate holder) in the vertical direction and the rotational direction are shown. Figure 1 In FIG. 3 , the substrate holder is shown to be raised by the vertical driving mechanism 400 and housed in the reaction tube.

[0067] Next, use Figure 1 、 Figure 6 The details of the substrate supporting portion, which is a portion that supports the substrate S, will be described.

[0068] The substrate support section is composed of at least a substrate support member 300. A vacuum transfer robot is used to transfer substrates S through a substrate transfer port (not shown) within the transfer chamber 217, or to transfer the transferred substrates S into the reaction tube 210 for a thin film formation process on the surface of the substrates S. Furthermore, the substrate support section may also include a partition support section 310.

[0069] The spacer support 310 has a plurality of disk-shaped spacers 314 fixed at predetermined intervals on pillars 313 supported between a base 311 and a top plate 312. The substrate support 300 has a structure in which a plurality of support rods 315 are supported on the base 311, and a plurality of substrates S are supported at predetermined intervals by these support rods 315.

[0070] like Figure 6 As shown, a plurality of substrates S are horizontally placed at predetermined intervals on a substrate support 300 via a plurality of support rods 315 supported by a base 311. The plurality of substrates S supported by the support rods 315 are separated by disk-shaped partitions 314 fixed (e.g., supported) at predetermined intervals on pillars 313 supported by a partition support portion 310. The partitions 314 are disposed on either or both of the upper and lower portions of the substrates S.

[0071] The predetermined interval between the plurality of substrates S placed horizontally on the substrate support 300 is the same as the vertical interval between the spacers 314 fixed to the spacer support portion 310. The diameter of the spacers 314 is formed to be larger than the diameter of the substrates S.

[0072] The substrate support 300 supports multiple substrates S, for example, five, in a multi-stage vertical direction via a plurality of support rods 315. The base 311 and the plurality of support rods 315 are formed of materials such as quartz or SiC. While this example shows five substrates S supported by the substrate support 300, this is not limiting. For example, the substrate support 300 can also be configured to support 5 to 50 (5 to 50) substrates S.

[0073] like Figure 1 As shown, the partition support 310 and the substrate support 300 are driven by the vertical driving mechanism 400 in the vertical direction between the reaction tube 210 and the transfer chamber 217 and in the rotation direction around the center of the substrate S supported by the substrate support 300 .

[0074] The vertical driving mechanism 400 constituting the first driving unit includes the following components as driving sources: a vertical driving motor 410; a rotation driving motor 430; and a boat vertical mechanism 420 including a linear actuator as a substrate support lifting mechanism for driving the substrate support 300 in the vertical direction.

[0075] (Gas supply system)

[0076] like Figure 2 and Figure 3 As shown, as an example, in this embodiment, various gases may be supplied to the distribution parts 222 on both sides in the width direction through the gas supply pipes 251 , and various gases may be supplied to the distribution part 222 on the central side through the gas supply pipe 261 .

[0077] Furthermore, connected upstream of the gas supply pipe 251 are a mass flow controller (MFC), a flow controller (flow control unit), and a valve (not shown) known in substrate processing equipment. A gas source may also be included in the gas supply system and connected upstream of the gas supply pipe 251.

[0078] As an example, the gas supply pipe 251 is connected to a second gas source that supplies a second gas containing a second element (also referred to as "second-element-containing gas"), a first gas source that supplies a first gas containing a first element (also referred to as "first-element-containing gas"), and an inert gas source that supplies an inert gas. The inert gas source supplies an inert gas, such as nitrogen (N2) gas. The inert gas may also be a gas other than nitrogen (N2) gas.

[0079] The second gas is a raw material gas, that is, one of the processing gases. Here, as an example of the second gas, there is a gas in which at least two silicon atoms (Si) are bonded, such as a gas containing Si and chlorine (Cl). Figure 7A The raw material gas containing Si-Si bond is Si2Cl6 (hexachlorodisilane, abbreviated as HCDS) gas, but other gases can also be used. Figure 7A As shown, HCDS gas contains Si and chlorine groups (chloride) in its chemical structure (in one molecule).

[0080] This Si-Si bond has enough energy to break down within the reaction tube 210 by colliding with the walls of recessed portions (not shown) such as grooves constituting the substrate S, described later. Here, the term "breakdown" refers to the cleavage of the Si-Si bond. Specifically, the Si-Si bond is cleaved by colliding with the wall.

[0081] In addition, the gas containing the first element is one of the processing gases. In addition, the gas containing the first element can also be regarded as a reaction gas or a reforming gas.

[0082] Here, the gas containing the first element is an example of a reaction gas, and contains a first element different from the second element. The first element is, for example, any of oxygen (O), nitrogen (N), and carbon (C). In this embodiment, the gas containing the first element is, for example, a nitrogen-containing gas. Specifically, it is a nitride-based gas containing an NH bond, such as ammonia (NH3), diazene (N2H2) gas, hydrazine (N2H4) gas, or N3H8 gas, but other gases may also be used.

[0083] The inert gas supplied from the inert gas source is used as a purge gas for purging gases accumulated in various pipes, the gas supply unit 227 , and the reaction tube 210 during the substrate processing step.

[0084] (Exhaust System)

[0085] Next, the exhaust system will be described.

[0086] like Figure 1 As shown, an exhaust system (not shown) for exhausting the atmosphere of the reaction tube 210 is connected to the gas exhaust pipe connection portion 242 .

[0087] The exhaust system is configured to perform vacuum exhaust to maintain the pressure within the reaction tube 210 at a predetermined level (e.g., vacuum level) through the valve (open / close valve), the APC (Auto Pressure Controller) valve (pressure regulator, e.g., pressure regulator), and the reaction tube 210. A vacuum pump may also be included in the exhaust system. The exhaust system is also referred to as the process chamber exhaust system.

[0088] (Controller)

[0089] The substrate processing apparatus 100 has a control unit for controlling the operation of each unit of the substrate processing apparatus 100. Figure 8 Controller 600 is shown.

[0090] The controller 600, which serves as a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 601, RAM (Random Access Memory) 602, a storage unit 603, and an I / O (Input / Output) port 604. The RAM 602, storage unit 603, and I / O port 604 are configured to exchange data with the CPU 601 via an internal bus 605. Data transmission and reception within the substrate processing apparatus 100 is performed by instructions from a transmission / reception instruction unit 606, which is also a function of the CPU 601.

[0091] The controller 600 is provided with a network transceiver 683 connected to the host device 670 via a network. The network transceiver 683 can receive information such as the processing history and processing schedule of the substrates S stored in a cassette (not shown) from the host device 670.

[0092] The storage unit 603 is composed of, for example, a flash memory, a hard disk drive (HDD), etc. The storage unit 603 readablely stores a control program for controlling the operation of the substrate processing apparatus, or a process recipe describing a procedure or conditions for substrate processing.

[0093] In addition, the process recipe is a combination of the various programs in the substrate processing steps described below that are executed by the controller 600, so as to obtain a predetermined result, and functions as a program. Hereinafter, the general term for process recipes or control programs, etc., is also referred to as a program. In addition, when the term "program" is used in this specification, it refers to the case of only the process recipe alone, the case of only the control program alone, or the case of both. In addition, RAM 602 is configured as a storage area (work area) for temporarily storing programs and data read by CPU 601.

[0094] The I / O port 604 is connected to various components of the substrate processing apparatus 100. The CPU 601 is configured to read and execute a control program from the storage unit 603, and to read a process recipe from the storage unit 603 in response to input of an operation command from the input / output device 681. Furthermore, the CPU 601 is configured to control the substrate processing apparatus 100 according to the contents of the read process recipe.

[0095] The CPU 601 has a sending and receiving instruction unit 606. The controller 600 can install the program into a computer by using an external storage device (such as a magnetic disk such as a hard disk, an optical disk such as a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 682 that stores the above-mentioned program, thereby forming the controller 600 of this embodiment. In addition, the device (means) for supplying the program to the computer is not limited to the case where it is supplied via the external storage device 682. For example, a communication device (such as a communication means) such as a network or a dedicated line can also be used to supply the program without passing through the external storage device 682. In addition, the storage unit 603 or the external storage device 682 is configured as a computer-readable recording medium. Hereinafter, the general term for these will be referred to as recording medium. Furthermore, when the term recording medium is used in this specification, it refers to the case where only the storage unit 603 is included, the case where only the external storage device 682 is included, or the case where both are included.

[0096] (Processing steps)

[0097] Next, as one step of semiconductor manufacturing, a description will be given of a step of forming a thin film on a substrate S using the substrate processing apparatus 100 having the above-described configuration. In the following description, the operations of the various components constituting the substrate processing apparatus are controlled by the controller 600 .

[0098] Here, for the film forming process in which the second gas and the first gas are alternately supplied to form a film on the substrate S, the second gas and the first gas are alternately supplied to form a film on the substrate S. Figure 9 Provide explanation.

[0099] (Step S202)

[0100] First, the transfer chamber pressure adjustment step S202 will be described. Here, the pressure within transfer chamber 217 is set to a vacuum level. Specifically, an exhaust system (not shown) connected to transfer chamber 217 is activated to exhaust the environment of transfer chamber 217 to a vacuum level.

[0101] Furthermore, the heater 211 may be operated in parallel with this step. When the heater 211 is operated, it is operated at least during the film processing step S208 described later.

[0102] (Step S204)

[0103] Next, the substrate carrying-in step S204 (an example of a step of carrying-in a substrate according to the present invention) will be described.

[0104] The transfer chamber 217 is set to a vacuum level, and the substrate S is transferred into the transfer chamber 217 from an adjacent vacuum transfer chamber (not shown).

[0105] At this time, the substrate support 300 is on standby in the transfer chamber 217 , and the substrates S are transferred to the substrate support 300 . After a predetermined number of substrates S are transferred to the substrate support 300 , the vacuum transfer robot is retracted and the substrate support 300 is raised to move the substrates S into the reaction tube 210 .

[0106] When moving toward the reaction tube 210 , the substrate S is positioned so as to be aligned with the height of the gas supply unit 227 .

[0107] (Step S206)

[0108] The heating step S206 is described. The substrate S is moved into the reaction tube 210, and the heater 211 is controlled so that the surface temperature of the substrate S becomes a predetermined temperature. As an example, the temperature is in the high temperature zone described later, for example, heated to 400°C to 800°C. It is preferably 500°C to 700°C, but is not limited to these temperatures. In addition, the notation of a numerical range such as "400°C to 800°C" in this specification means that the range includes a lower limit and an upper limit. Therefore, for example, the so-called "400°C to 800°C" means "above 400°C and below 800°C". The same applies to other numerical ranges.

[0109] (Step S208)

[0110] The film processing step S208 is described. After the heating step S206, the film processing step S208 is performed. In the film processing step S208, in accordance with the process recipe, the second gas is ejected from the blowing holes 222c on both sides of the gas supply structure 212 to the interior of the gas supply part 227 (two gas inlet parts 506 on both sides in the width direction. The second gas supply path of the present invention) and supplied to the reaction tube 210, and at the same time, the exhaust system 280 is controlled to exhaust the processing gas from the reaction tube 210 to perform film processing. This film processing step S208 corresponds to the step of supplying processing gas to the substrate S of the present invention. In addition, the blowing holes 222c on both sides of the gas supply structure 212 are an example of the second gas inlet port of the present invention.

[0111] In this step, a description will be given of a case where the second gas and the first gas are alternately supplied into the reaction tube 210 to perform an alternating supply process. The supply and exhaust of the gas are controlled so that the interior of the reaction tube 210 is kept at a predetermined pressure.

[0112] As a specific example of an alternating supply process for a film treatment method, the following method can be considered. For example, in the first step, the second gas is supplied into the reaction tube 210, and in the second step, the first gas is supplied into the reaction tube 210. Between the first and second steps, an inert gas is supplied into the reaction tube 210 as a flushing step, and the atmosphere of the reaction tube 210 is simultaneously exhausted. The alternating supply process combining the first step, the flushing step, and the second step is repeated multiple times to form the desired film.

[0113] The supplied gas passes through the gas supply unit 227 , the space above the substrate S, and the downstream rectifying unit 215 , thereby forming a gas flow most suitable for processing the substrate S.

[0114] For example, when supplying the second gas into the reaction tube 210, the second gas is supplied from the distribution sections 222 on both sides of the gas supply structure 212 toward the gas supply section 227. The second gas supplied by the distribution section 222 is ejected from the blowout holes 222 c on both sides toward the gas inlet sections 506 on both sides of the gas supply section, and a portion of the second gas flows through the connecting section 520 of the vertical plate-shaped member 504 toward the gas inlet section 506 on the central side of the adjacent gas supply section.

[0115] As a result, an equal amount of the second gas can be discharged at the same speed along the surface of the substrate S from the downstream ends of the gas introduction parts 506 on both sides and the downstream end of the central gas introduction part 506. The second gas is ejected horizontally from the gas supply part 227 and supplied parallel to the surface of the horizontally arranged substrate S, thereby uniformly treating the surface of the substrate S.

[0116] In addition, if Figure 1 As shown, the gas supply part 227 is provided at multiple stages in the height direction of the substrate holder. The gas supply part 227 is provided for each substrate S, so that each substrate S can be uniformly processed.

[0117] like Figure 4 As shown, in the gas supply unit 227, by setting the width Wb of the connecting portion 520 to 5-10% of the lateral width WA of the gas inlet portion 506, the amount of gas entering the gas inlet portion 506 at the center of the gas supply unit in the width direction from the gas inlet portions 506 on both sides of the gas supply unit in the width direction is optimized. This makes it possible to uniformize the amount and velocity of the second gas discharged from each gas inlet portion 506 toward the substrate S, thereby increasing the average flow velocity of the gas discharged from each gas inlet portion 506.

[0118] When the first gas is supplied into the reaction tube 210 , similarly to the case of supplying the second gas into the reaction tube 210 , the gas flow is regulated by the gas rectifying member 500 , so that the entire surface of the substrate S can be uniformly processed.

[0119] When supplying the first gas into the reaction tube 210, the first gas is ejected from the tip 530A of the gas introduction nozzle 530 toward the two gas inlets 506 located at the center of the width direction of the gas supply section 227 (the first gas supply path of the present invention). A portion of the first gas ejected from the tip 530A flows through the connecting portion 520 of the vertical plate-shaped member 504 toward the gas inlets 506 on either side of the adjacent gas supply section. Consequently, equal amounts of the first gas are ultimately discharged along the surface of the substrate S at the same speed from the downstream end of the central gas inlet 506 and the downstream ends of the gas inlet 506 on either side.

[0120] However, when the second gas and the first gas are alternately supplied into the reaction tube 210 , for example, after the supply of the first gas is stopped, part of the first gas may adhere to the gas supply unit 227 and the gas rectifying member 500 .

[0121] In this state, if the second gas is subsequently supplied to the interior of the gas supply section 227, the first gas attached to the gas supply section 227 and the gas rectification component 500 reacts with the second gas supplied thereafter, thereby generating particles (unnecessary impurities generated by the reaction of the second gas and the first gas) in the gas supply section 227.

[0122] In this embodiment, since the front end 530A of the gas introduction nozzle 530 is arranged at a high temperature position where the nitrogen-containing gas belonging to the first gas does not adhere to the gas supply part 227 and the gas rectifying component 500, the nitrogen-containing gas introduced from the gas introduction nozzle 530 into the reaction tube 210 does not adhere to the gas supply part 227 and the gas rectifying component 500, thereby suppressing its reaction with the second gas remaining in the gas supply part 227 and the gas rectifying component 500, thereby suppressing the generation of particles in the gas supply part 227.

[0123] Furthermore, since the generation of particles is suppressed, the adhesion of particles to the substrate S is suppressed, and a high-quality processed substrate S can be obtained.

[0124] Furthermore, when the nitrogen-containing gas serving as the first gas is ammonia (NH3) gas, it is preferable to discharge the ammonia gas at locations where the temperature of the gas supply unit 227 and the gas rectifying member 500 is 400°C or higher (high-temperature locations where ammonia does not adhere). In other words, ammonia gas is more likely to adhere to locations below 400°C.

[0125] In this embodiment, if Figure 2As shown, ammonia gas is ejected from the gas supply unit 227 and the gas rectifying member 500 at a temperature of 550°C. Figure 2 The front end 530A of the gas introduction nozzle 530 is configured at the position indicated by the two-dot dashed line in the figure.

[0126] Furthermore, when the second gas is HCDS gas, for example, the surface temperature of the substrate S and the temperature in the gas supply unit 227 are preferably set to 800° C. or less. If the temperature exceeds 800° C., the HCDS gas decomposes.

[0127] (Step S210)

[0128] The substrate unloading step S210 is described. In S210, the processed substrate S is unloaded out of the transfer chamber 217 through the reverse procedure of the substrate loading step S204.

[0129] (Step S212)

[0130] Determination S212 is described. Here, it is determined whether the substrate has been processed a predetermined number of times. If it is determined that the substrate has not been processed a predetermined number of times, the process returns to the substrate loading step S204 and the next substrate S is processed. If it is determined that the substrate has been processed a predetermined number of times, the process ends.

[0131] In addition, the above expressions such as the same degree, the same, and equal to appear, but of course these also include cases where they are substantially the same.

[0132] Furthermore, if the gas inlet nozzle 530 is not provided and ammonia (first gas) is ejected into the gas supply section 227 from the side of the gas supply structure 212, the ammonia gas passes through the low-temperature (less than 400°C) portion of the gas supply section 227, and there is a concern that particles may be generated near the gas supply structure 212.

[0133] On the other hand, in this embodiment, since ammonia gas is ejected at the gas supply unit 227 and the gas rectifying member 500 where the temperature is higher than 400° C., ammonia gas does not adhere to the gas supply unit 227 and the gas rectifying member 500 , thereby suppressing particle generation.

[0134] Furthermore, in the above embodiment, an example of spraying ammonia gas into the interior of the gas supply part 227 is described, but in the case of spraying a first gas other than ammonia gas, the first gas is sprayed at a high-temperature portion to which the first gas does not adhere. In other words, the front end 530A of the gas inlet nozzle 530 is arranged at a high-temperature portion to which the first gas does not adhere.

[0135] Furthermore, while ammonia gas (first gas) is flowing through the two gas inlet portions 506 at the center in the width direction of the gas supply unit 227, inert gas may be flowing through the two gas inlet portions 506 at both sides in the width direction. By flowing the inert gas, the ammonia gas can be diluted.

[0136] Furthermore, when HCDS gas (second gas) flows through the two gas inlet ports 506 on both sides of the gas supply unit 227 in the width direction, an inert gas may flow through the two gas inlet ports 506 on the center side in the width direction. By flowing the inert gas, the HCDS gas can be diluted.

[0137] As described above, according to the present invention, one or more effects can be obtained.

[0138] (Other methods)

[0139] While the embodiments of the present embodiment have been specifically described above, the present invention is not limited thereto and various modifications can be made without departing from the spirit and scope of the present invention.

[0140] In addition, for example, in each of the above embodiments, an example is given of a case where a film is formed on a substrate S using a first gas and a second gas in a film forming process performed by the substrate processing apparatus 100, but the present method is not limited thereto. That is, other types of gases can also be used as processing gases used in the film forming process to form other types of thin films. Furthermore, even in the case of using more than three processing gases, the present method can still be applied as long as these are alternately supplied to perform the film forming process. Specifically, as the first element, various elements such as titanium (Ti), silicon (Si), zirconium (Zr), and hafnium (Hf) can also be used. In addition, as the second element, nitrogen (N), oxygen (O), etc. can also be used. In addition, as the first element, Si is more ideal as described above.

[0141] Here, HCDS gas is used as an example for the second gas. However, if it contains silicon and has Si-Si bonds, it is not limited to this. For example, tetrachlorodimethyldisilane ((CH3)2Si2Cl4, abbreviated as: TCDMDS) or dichlorotetramethyldisilane ((CH3)4Si2Cl2, abbreviated as: DCTMDS) can also be used. TCDMDS is Figure 7B As described above, it has Si-Si bonds and further contains chloro groups and alkylene groups. Figure 7C It is described that it has a Si-Si bond and further contains a chloro group and an alkylene group.

[0142] Furthermore, for example, in the above-described embodiments, film formation is cited as an example of a process performed by a substrate processing apparatus, but the present embodiment is not limited thereto. That is, in addition to the film formation processes cited as examples in the embodiments, the present embodiment can also be applied to film formation processes other than the thin film processes exemplified in the embodiments. Furthermore, a portion of the configuration of one embodiment may be replaced with a configuration of another embodiment, and a configuration of another embodiment may be added to a configuration of one embodiment. Furthermore, other configurations may be added to, deleted from, or substituted for a portion of the configuration of each embodiment.

[0143] In the above embodiment, four gas inlet portions 506 are provided in the width direction of the gas supply portion inside the gas supply portion 227, but the number of longitudinal plate-shaped components 504 provided on the gas rectification component 500 may be increased, and more than five gas inlet portions 506 may be provided in the width direction of the gas supply portion. The number of gas rectification components 500 may be increased or decreased as needed.

[0144] In either case, gas may be supplied to at least two gas introduction parts 506 among the plurality of gas introduction parts 506. In addition, gas may be supplied to three or more gas introduction parts 506 as needed.

[0145] In the above embodiment, a gas rectifying component 500 is arranged inside the gas supply section 227 to divide the inside of the gas supply section into two in the vertical direction, and four gas inlet sections 506 are arranged horizontally on the upper and lower sides. However, the gas supply section 227 can be divided into two up and down as needed, or it is not necessary to divide the gas supply section 227 into two up and down.

[0146] The communication portions 518 and the communication portions 520 may be provided at necessary locations so that the flow of the processing airflow becomes wide and symmetrical with respect to the substrate S.

[0147] The gas supply units 227 can be stacked in accordance with the number of substrates S to be processed. For processing one substrate S, only one gas supply unit 227 is required. The present invention can also be applied to processing one substrate S, and the same effects as those of the above embodiment can be achieved.

[0148] The gas flow rectifying member 500 described in the above embodiment is formed of a plate-shaped member, but may be formed of a member other than a plate-shaped member.

[0149] The term "substrate" used in this specification refers to the substrate itself, or to a laminate of a substrate and a predetermined layer or film formed on its surface. The term "substrate surface" used in this specification refers to the surface of the substrate itself, or to the surface of a predetermined layer, etc. formed on the substrate. When it is stated in this specification that "a predetermined layer is formed on the substrate", it means that the predetermined layer is directly formed on the surface of the substrate itself, or that the predetermined layer is formed on a layer, etc. formed on the substrate. The term "substrate" in this specification is synonymous with the term "wafer".

[0150] In addition, although not particularly described in the above embodiment, each requirement is not limited to one, and may exist in plurality unless otherwise specified in the specification.

[0151] Furthermore, the above embodiment describes an example of film formation using a substrate processing apparatus that processes multiple substrates. The present invention is not limited to the above embodiment and is also applicable to film formation using a substrate processing apparatus that processes a single substrate. Furthermore, the present invention is also applicable to substrate processing apparatuses with cold-wall processing furnaces or hot-wall processing furnaces, and to substrate processing apparatuses with nozzles that blow processing gas along the substrate.

[0152] When these substrate processing apparatuses are used, each process can be performed using the same processing procedures and processing conditions as those in the above-described embodiment or modification examples, thereby achieving the same effects as those in the above-described embodiment or modification examples.

[0153] In addition, the above-mentioned aspects or modifications may be used in combination as appropriate. In this case, the processing procedures and processing conditions may be, for example, the same as those of the above-mentioned aspects or modifications.

[0154]

Explanation of symbols

[0155] 100: substrate processing device

[0156] 210: reaction tube (processing chamber)

[0157] 506: Gas inlet portion (first gas supply path, second gas supply path)

[0158] 530: Gas introduction nozzle (nozzle, first gas introduction part)

[0159] 530A: Front end (1st gas inlet)

Claims

1. A substrate processing device, characterized in that: have: a processing chamber for processing a substrate; a first gas supply path for supplying a first gas to the substrate from a side of the processing chamber; and The first gas inlet is provided at a location of a predetermined temperature in the first gas supply path and introduces the first gas into the first gas supply path.

2. The substrate processing apparatus according to claim 1, wherein: The first gas inlet port is provided in a first gas introduction portion disposed in the first gas supply path.

3. The substrate processing apparatus according to claim 2, wherein: The first gas introduction portion is a nozzle, and the first gas introduction port is provided at a front end of the nozzle.

4. The substrate processing apparatus according to claim 3, wherein: The tip of the nozzle is provided at the portion with the predetermined temperature.

5. The substrate processing apparatus according to claim 1, wherein have: a second gas supply path for supplying a second gas different from the first gas to the substrate from a side of the processing chamber; and A second gas introduction port introduces the second gas into the second gas supply path.

6. The substrate processing apparatus according to claim 5, wherein: A distance between the first gas introduction port and the substrate is shorter than a distance between the second gas introduction port and the substrate.

7. The substrate processing apparatus according to claim 5, wherein: A gas supply unit including the first gas supply path and the second gas supply path is formed, A housing for housing the gas supply unit is provided on a side surface of the processing chamber.

8. The substrate processing apparatus according to claim 7, wherein: A partition wall is provided between the first gas supply path and the second gas supply path.

9. The substrate processing apparatus according to claim 7, wherein: The first gas supply path and the second gas supply path are provided adjacent to each other.

10. The substrate processing apparatus according to claim 7, wherein: The processing chamber accommodates a substrate holding portion, which is loaded with and holds a plurality of the substrates; The housing portion loads and houses the plurality of gas supply units.

11. The substrate processing apparatus according to claim 7, wherein: A heating portion is provided for heating the housing portion.

12. The substrate processing apparatus according to claim 1, wherein: The first gas is a reaction gas.

13. The substrate processing apparatus according to claim 12, wherein: The reaction gas is nitrogen-containing gas.

14. The substrate processing apparatus according to claim 13, wherein: The predetermined temperature is a temperature at which the nitrogen-containing gas does not adhere to the first gas supply path.

15. The substrate processing apparatus according to claim 5, wherein: When the first gas is supplied to the first gas supply path, the inert gas is supplied to the second gas supply path.

16. The substrate processing apparatus according to claim 5, wherein: When the second gas is supplied to the second gas supply path, the inert gas is supplied to the first gas supply path.

17. A gas supply unit, characterized in that: have: a first gas supply path for supplying a first gas to the substrate from a side of a processing chamber in which the substrate is processed; and The first gas inlet is provided at a location of a predetermined temperature in the first gas supply path and introduces the first gas into the first gas supply path.

18. A substrate processing method, characterized in that: The method includes supplying a first gas to the substrate in the processing chamber via a first gas inlet provided at a location at a predetermined temperature in a first gas supply path for supplying the first gas, and introducing the first gas into the first gas supply path.

19. A method for manufacturing a semiconductor device, characterized in that: The substrate processing method according to claim 18 is used.

20. A program, characterized in that A computer is used to cause a substrate processing apparatus to execute the following steps: a step of supplying a first gas to a substrate in a processing chamber via a first gas inlet port, wherein the first gas inlet port is provided at a position of a specified temperature in a first gas supply path for supplying the first gas, and introducing the first gas into the first gas supply path.

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