Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and program

Abstract

Provided is a technique capable of improving the step coverage of a film formed on a substrate. The method includes a supply step of supplying a processing gas to a substrate from a reservoir in which the processing gas is stored, and in the supply step, the amount of the gas in the reservoir at the end time of the supply step is set to be equal to or greater than a predetermined amount.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method, a method for manufacturing a semiconductor device, a substrate processing apparatus, and a program. Background Art

[0002] In some cases, a process gas is supplied to a substrate to form a film on a substrate having recessed portions formed on its surface (for example, see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2022 / 196339 Pamphlet Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a technology capable of improving the step coverage of a film formed on a substrate.

[0008] Means for solving problems

[0009] According to one embodiment of the present disclosure, a technology is provided, comprising:

[0010] a supplying step of supplying the processing gas from a storage portion storing the processing gas to the substrate;

[0011] In the supply step, the amount of gas in the storage unit at the end of the supply step is set to be equal to or greater than a predetermined amount.

[0012] Effects of the Invention

[0013] According to the present disclosure, the step coverage of a film formed on a substrate can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a longitudinal sectional view schematically showing a substrate processing apparatus according to one embodiment of the present disclosure.

[0015] Figure 2 (A) is a diagram showing a first process gas supply system in one embodiment of the present disclosure. Figure 2 (B) is a diagram showing a second process gas supply system in one embodiment of the present disclosure. Figure 2 (C) is a diagram showing an exhaust system in one embodiment of the present disclosure.

[0016] Figure 3 This is a schematic configuration diagram of a controller of a substrate processing apparatus according to one embodiment of the present disclosure, and is a diagram showing a control system of the controller using a block diagram.

[0017] Figure 4 This is a diagram showing a substrate processing sequence in one embodiment of the present disclosure.

[0018] Figure 5 Yes Figure 4 Flowchart showing details of the first process gas supply step.

[0019] Figure 6 yes Figure 4 Schematic diagram of the inside of the tank during the first process gas supply step. DETAILED DESCRIPTION

[0020] The following mainly refers to Figure 1 FIG8 illustrates one embodiment of the present disclosure. The drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings may not necessarily correspond to actual conditions. Furthermore, the dimensional relationships and ratios of the elements shown in the drawings may not necessarily correspond to actual conditions.

[0021] (1) Structure of substrate processing apparatus

[0022] use Figure 1 , the structure of the substrate processing apparatus 10 is described.

[0023] The substrate processing apparatus 10 includes a reaction tube storage chamber 206b. Within the reaction tube storage chamber 206b are a vertically extending cylindrical reaction tube 210, a heater 211 as a heating unit (furnace body) disposed on the outer periphery of the reaction tube 210, a gas supply structure 212 as a gas supply unit, and a gas exhaust structure 213 as a gas exhaust unit. The gas supply unit may also include an upstream rectifying unit 214 and nozzles 223 and 224, which will be described later. Furthermore, the gas exhaust unit may also include a downstream rectifying unit 215, which will be described later. The area within the reaction tube 210 where the substrates S are processed is referred to as a processing chamber 201. Furthermore, the processing chamber 201 may also be referred to as a processing space within which the substrates S are disposed.

[0024] The gas supply structure 212 is disposed upstream of the reaction tube 210 in the direction of gas flow. Gas is supplied from the gas supply structure 212 into the reaction tube 210, and gas is supplied horizontally to the substrate S. The gas exhaust structure 213 is disposed downstream of the reaction tube 210 in the direction of gas flow. Gas within the reaction tube 210 is exhausted from the gas exhaust structure 213. The gas supply structure 212, the interior of the reaction tube 210, and the gas exhaust structure 213 are horizontally connected.

[0025] An upstream-side rectifying section 214 is provided on the upstream side of the reaction tube 210 between the reaction tube 210 and the gas supply structure 212 to regulate the flow of the gas supplied from the gas supply structure 212. Furthermore, a downstream-side rectifying section 215 is provided on the downstream side of the reaction tube 210 between the reaction tube 210 and the gas exhaust structure 213 to regulate the flow of the gas exhausted from the reaction tube 210. The lower end of the reaction tube 210 is supported by a manifold 216.

[0026] The reaction tube 210, upstream rectifying section 214, and downstream rectifying section 215 are continuous structures formed of materials such as quartz and SiC. They are composed of heat-transmitting components that transmit heat radiated from the heater 211. The heat from the heater 211 heats the substrate S and the gas.

[0027] The gas supply structure 212 is connected to the gas supply pipe 251 and the gas supply pipe 261, and has a distribution part 225 that distributes the gas supplied from each gas supply pipe. A plurality of nozzles 223 and nozzles 224 are provided on the downstream side of the distribution part 225. The gas supply pipe 251 and the gas supply pipe 261 supply different types of gases as described later. The nozzles 223 and nozzles 224 are arranged in an up-down relationship or in a horizontal arrangement. In this embodiment, the gas supply pipe 251 and the gas supply pipe 261 are collectively referred to as the gas supply pipe 221. Each nozzle is also referred to as a gas ejection part. The distribution part 225 is configured to supply each gas from the gas supply pipe 251 to the nozzle 223, and to supply each gas from the gas supply pipe 261 to the nozzle 224.

[0028] The upstream rectifying section 214 includes a housing 227 and a partition plate 226. The partition plate 226 is a continuous, horizontally extending structure with no holes. The horizontal direction here refers to the direction of the sidewall of the housing 227. Multiple partition plates 226 are arranged vertically. The partition plates 226 are fixed to the sidewall of the housing 227, so that gas does not flow beyond the partition plates 226 to adjacent areas below or above.

[0029] Each partition plate 226 is provided at a position corresponding to each substrate S. Nozzles 223 and 224 are provided between the partition plates 226 and between the partition plates 226 and the housing 227. The gas flow ejected from the nozzles 223 and 224 is regulated by the partition plates 226 and supplied to the surface of the substrate S. In other words, the gas is supplied in a lateral direction of the substrate S when viewed from the substrate S.

[0030] The downstream side rectifying portion 215 is configured such that, when the substrates S are supported by the substrate support 300 , the top portion is higher than the uppermost substrate S and the bottom portion is lower than the lowermost substrate S disposed on the substrate support 300 .

[0031] The downstream rectifying section 215 includes a housing 231 and a partition plate 232. The partition plate 232 is a continuous, horizontally extending structure with no holes. The horizontal direction here refers to the direction of the sidewall of the housing 231. Furthermore, multiple partition plates 232 are arranged vertically. The partition plates 232 are fixed to the sidewall of the housing 231, and are configured so that gas does not flow beyond the partition plates 232 to adjacent areas below or above them.

[0032] The partition plates 232 are positioned at positions corresponding to the substrates S and corresponding to the partition plates 226. The corresponding partition plates 226 and 232 are preferably at the same height. Furthermore, when processing substrates S, the height of the substrates S is preferably aligned with the heights of the partition plates 226 and 232. This suppresses vertical flow on the partition plates 226, the substrates S, and the partition plates 232, making the pressure differences of the gas on each substrate S uniform. Consequently, each substrate S can be processed uniformly.

[0033] By arranging the partitioning plate 226 and the partitioning plate 232 in the aforementioned positional relationship, it is possible to achieve uniform pressure loss in the vertical direction upstream and downstream of each substrate S. Specifically, a horizontal airflow, as indicated by the arrows in the figure, can be reliably generated, suppressing vertical flow through the partitioning plate 226, over the substrates S, and through the partitioning plate 232. Consequently, the difference in gas pressure across each substrate S can be reduced, enabling uniform processing of each substrate S.

[0034] The gas exhaust structure 213 is located downstream of the downstream rectifying section 215. It primarily consists of a housing 241 and an exhaust pipe connection portion 242. The housing 231 and housing 241 are constructed with their respective tops and bottoms being highly continuous. Exhaust holes 244 are formed on the downstream side and below, or horizontally, the housing 241 to exhaust gas that has passed through the downstream rectifying section 215. The gas exhaust structure 213 is located laterally of the reaction tube 210, exhausting gas laterally of the substrate S.

[0035] The transfer chamber 217 is provided at the lower portion of the reaction tube 210 via the manifold 216. In the transfer chamber 217, a substrate S is placed (mounted) on a substrate support (hereinafter sometimes referred to as a wafer boat) 300 via a substrate loading port by a vacuum transfer robot, or a substrate S is removed from the substrate support 300 by the vacuum transfer robot.

[0036] The transfer chamber 217 can store the substrate support 300, the partition plate support 310, and the vertical direction driving mechanism 400 for driving the substrate support 300 and the partition plate support 310 in the vertical direction and the rotation direction (collectively referred to as a substrate holder). Figure 1, the substrate support 300 is shown to be raised by the vertical driving mechanism 400 and stored in the reaction tube 210 .

[0037] The vertical drive mechanism 400 includes a rotation drive mechanism 430 that rotates the substrate support 300 and the partition plate support 310 together, and a wafer boat vertical mechanism 420 that drives the substrate support 300 in the vertical direction relative to the partition plate support 310. The rotation drive mechanism 430 and the wafer boat vertical mechanism 420 are fixed to the base flange 401, which serves as a cover and is supported on the base plate 402 via the side plates 403. An O-ring 446 for vacuum sealing is provided on the upper surface of the base flange 401. Figure 1 As shown, the upper surface of the susceptor flange 401 is raised by the vertical drive motor 410 to a position where it contacts the transfer chamber 217, thereby maintaining an airtight interior of the reaction tube 210. The support 440 is connected to a support portion 441 fixed to the substrate support 300 via a vacuum bellows 443.

[0038] The substrate support unit is composed of a substrate support member 300 that supports at least a substrate S and is stored within the reaction tube 210. Furthermore, the substrate support unit transfers the substrate S via a substrate loading port (not shown) within the transfer chamber 217 using a vacuum transfer robot, or performs a process for transferring the transferred substrate S into the reaction tube 210 to form a thin film on the surface of the substrate S. The substrate loading port is, for example, provided in a side wall of the transfer chamber 217. Furthermore, it is also conceivable that the substrate support unit may include a partition plate support unit 310.

[0039] Multiple substrates S are placed on a substrate support 300 at predetermined intervals in the vertical direction. Partition plates 314 are positioned directly below the substrates S, either above or below the substrates S, or on both sides. The partition plates 314 partition the space between the substrates S. The predetermined intervals between the multiple substrates S placed on the substrate support 300 are the same as the upper and lower intervals between the partition plates 314 fixed to the partition plate support 310. Furthermore, the diameter of the partition plates 314 is larger than the diameter of the substrates S.

[0040] In addition, here, an example in which five substrates S are supported by the substrate support 300 is shown, but the present invention is not limited to this. For example, the substrate support 300 can also be configured to support about 5 to 50 substrates S. In addition, the partition plate 314 is also called a partition. In addition, the expression of a numerical range such as "5 to 50 sheets" in this specification means that the lower limit and the upper limit are included in the range. Therefore, for example, "5 to 50 sheets" means "more than 5 sheets and less than 50 sheets." The same applies to other numerical ranges.

[0041] Next, use Figure 2 (A)~ Figure 2 (C) The gas supply system and exhaust system are described in detail.

[0042] like Figure 2 As described in (A) of FIG. 1 , the gas supply pipe 251 is provided with, in order from the upstream direction, a first process gas source 252, a mass flow controller (MFC) 253 serving as a flow controller (flow control unit), a valve 275 serving as an on-off valve, a tank 259 serving as a storage unit storing gas therein, a pressure sensor 301 serving as a pressure measuring device (pressure measuring unit) for measuring the pressure within the tank 259, and a valve 254. Here, the pressure sensor 301 can be considered an example of a measuring unit for measuring the amount of gas within the tank 259, or a detecting unit for detecting that the amount of gas within the tank 259 has reached a specific amount.

[0043] The first process gas source 252 is a gas source for supplying a first process gas, which serves as a process gas. The first process gas is a raw material gas, one of the process gases. Alternatively, a vaporizer or the like may be used as the first process gas source 252. The first process gas supply system 250 (also referred to as the raw material gas supply system) is primarily composed of a gas supply pipe 251, an MFC 253, a valve 275, a tank 259, a pressure sensor 301, and a valve 254. The first process gas source 252 may also be included in the first process gas supply system 250.

[0044] A gas exhaust pipe 302 is connected between the pressure sensor 301 and the valve 254 in the gas supply pipe 251. The gas exhaust pipe 302 is used to discharge the gas in the tank 259 outside the processing chamber 201 instead of supplying it to the processing chamber 201. A valve 303 is provided on the gas exhaust pipe 302. The gas exhaust pipe 302 and the valve 303 primarily constitute a first process gas exhaust system (also referred to as a raw gas exhaust system). The first process gas exhaust system may also be included in the first process gas supply system 250.

[0045] The gas supply pipe 255 is connected between the valve 275 and the tank 259 in the gas supply pipe 251. An inert gas source 256, an MFC 257, and a valve 258 are provided in the gas supply pipe 255 in this order from the upstream. Inert gas is supplied from the inert gas source 256. The gas supply pipe 255, the MFC 257, and the valve 258 primarily constitute the first inert gas supply system. The inert gas supplied from the inert gas source 256 serves as a purge gas for purging gas trapped within the reaction tube 210 during the substrate processing step. The inert gas source 256 may also be included in the first inert gas supply system. Alternatively, the first inert gas supply system may be included in the first processing gas supply system 250.

[0046] like Figure 2As described in (B) of FIG. 2 , a second process gas source 262, an MFC 263, and a valve 264 are provided in order from upstream of the gas supply pipe 261. The second process gas source 262 is a gas source for supplying a second process gas serving as a process gas. The second process gas is a reactive gas or reforming gas that reacts with the raw material gas and is one of the process gases. The gas supply pipe 261, the MFC 263, and the valve 264 primarily constitute the second process gas supply system 260 (also referred to as a reactive gas supply system). The second process gas source 262 may also be included in the second process gas supply system 260.

[0047] A gas supply pipe 265 is connected to the downstream side of the valve 264 in the gas supply pipe 261. An inert gas source 266, an MFC 267, and a valve 268 are provided in this order from the upstream side of the gas supply pipe 265. Inert gas is supplied from the inert gas source 266. The gas supply pipe 265, the MFC 267, and the valve 268 primarily constitute the second inert gas supply system. The inert gas supplied from the inert gas source 266 serves as a purge gas for purging gas trapped within the reaction tube 210 during the substrate processing step. The inert gas source 266 may also be included in the second inert gas supply system. Alternatively, the second inert gas supply system may be included in the second processing gas supply system 260.

[0048] Next, use Figure 2 (C) The exhaust system is described.

[0049] The exhaust system 280 for exhausting the atmosphere in the reaction tube 210 includes an exhaust pipe 281 communicating with the reaction tube 210 and connected to the housing 241 via an exhaust pipe connection portion 242 .

[0050] like Figure 2 As described in (C), the exhaust pipe 281 is connected to a vacuum pump 284 as a vacuum exhaust device via a valve 282 and an APC (Auto Pressure Controller) valve 283 as a pressure regulator (pressure adjustment unit), so as to be able to perform vacuum exhaust so that the pressure in the reaction tube 210 reaches a predetermined pressure (vacuum degree). The exhaust pipe 281, valve 282, and APC valve 283 are collectively referred to as the exhaust system 280. The exhaust system 280 is also referred to as the process chamber exhaust system. In addition, the vacuum pump 284 may also be included in the exhaust system 280.

[0051] Next, use Figure 3 The controller as a control unit (control unit) will be described. The substrate processing apparatus 10 includes a controller 600 that controls the operation of each unit of the substrate processing apparatus 10 .

[0052] Figure 3Controller 600 is schematically shown. Controller 600 is configured as a computer having a CPU (Central Processing Unit) 601, RAM (Random Access Memory) 602, a storage device 603 as a memory unit, and an I / O port 604. RAM 602, storage device 603, and I / O port 604 are configured to exchange data with CPU 601 via an internal bus 605.

[0053] The storage device 603 is composed of, for example, a flash memory or a hard disk drive (HDD). The storage device 603 stores therein control programs for controlling the operation of the substrate processing apparatus 10 and process recipes describing substrate processing procedures and conditions in a readable manner.

[0054] Furthermore, the process recipe is a combination of processes that enable the controller 600 to execute the various processes in the substrate processing steps described later to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, control program, etc., will also be collectively referred to as a program. Furthermore, when the term "program" is used in this specification, it may include only the process recipe, only the control program, or both. Furthermore, the RAM 602 serves as a storage area (work area) for temporarily storing programs, data, etc. read by the CPU 601.

[0055] The I / O port 604 is connected to the above-mentioned vertical direction driving mechanism unit 400, heater 211, APC valve 283, vacuum pump 284, MFC253, 257, 263, 267, valves 254, 258, 264, 268, 275, 282, 303, pressure sensor 301, rotation driving mechanism 430, etc.

[0056] The CPU 601 is configured to read and execute a control program from the storage device 603, and to read a process recipe from the storage device 603 in response to input of an operation command from the input / output device 681. Furthermore, the CPU 601 is configured to control, in accordance with the contents of the read process recipe, the raising and lowering of the substrate support 300 by the vertical drive mechanism 400, the heating operation by the heater 211, the opening and closing of the APC valve 283, the start and stop of the vacuum pump 284, the flow rate adjustment of various gases by the MFCs 253, 257, 263, and 267, the opening and closing of the valves 254, 258, 264, 268, 275, 282, and 303, the pressure measurement in the tank 259 by the pressure sensor 301, the rotation of the substrate support 300 and the rotation speed adjustment by the rotation drive mechanism 430, and the like. The MFCs 253 , 257 , 263 , and 267 , the valves 254 , 258 , 264 , 268 , 275 , 282 , and 303 , the APC valve 283 , and the vacuum pump 284 can be used as a gas control unit configured to control supply and exhaust of gas into the processing chamber 201 .

[0057] The controller 600 uses an external storage device (e.g., a magnetic disk such as a hard disk, an optical disk such as a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 682 that stores the above-mentioned program to install the program on a computer, etc., thereby being able to constitute the controller 600 of this embodiment. In addition, the means for supplying the program to the computer is not limited to the case of supplying it via the external storage device 682. For example, a communication unit such as the Internet or a dedicated line can also be used to supply the program without passing through the external storage device 682. In addition, the storage device 603 and the external storage device 682 are configured as a computer-readable recording medium that records the program. Hereinafter, they will be collectively referred to as recording media. In addition, in this specification, when the term "recording medium" is used, there is a case where only the storage device 603 is included, a case where only the external storage device 682 is included, or a case where both are included.

[0058] (2) Substrate processing

[0059] Next, as one of the steps in the manufacturing process of a semiconductor device (element), Figure 4 8 , a process of forming a thin film on a substrate S using the substrate processing apparatus 10 having the above-described structure will be described. In the following description, the operations of the various components constituting the substrate processing apparatus 10 are controlled by the controller 600 .

[0060] Here, a film forming process for forming a film in recessed portions such as grooves and holes of the substrate S using a first process gas and a second process gas will be described.

[0061] The term "substrate" used in this specification may mean the substrate itself or a laminate of a substrate and a predetermined layer or film formed on its surface. The term "surface of a substrate" used in this specification may mean the surface of the substrate itself or the surface of a predetermined layer, etc. formed on the substrate. When it is stated in this specification that "a predetermined layer is formed on the substrate", it may mean that the predetermined layer is directly formed on the surface of the substrate itself or that the predetermined layer is formed on a layer, etc. formed on the substrate. The use of the term "wafer" in this specification is synonymous with the use of the term "substrate".

[0062] (Substrate Loading Step S1)

[0063] Multiple substrates S are loaded (wafer packing) onto the substrate support 300 in the transfer chamber 217. The substrate support 300, supporting the substrates S, is then raised by the vertical drive mechanism 400, and the substrates S are loaded (wafer boat loading) into the reaction tube 210. The lower end of the reaction tube 210 is sealed by the base flange 401 via an O-ring 446. At this time, the substrates S are positioned so that their surfaces are aligned with the partition plates 226 and 232.

[0064] (Pressure / Temperature Adjustment Step S2)

[0065] The vacuum pump 284 is used to evacuate (pressure control) the reaction tube 210 to a desired pressure. Furthermore, the heater 211 is used to heat (temperature control) the processing chamber 201 to a desired temperature. Furthermore, the rotation of the substrate S by the rotation drive mechanism 430 is started. These various operations are performed continuously until at least the processing of the substrate S is completed.

[0066] (Membrane treatment step S4)

[0067] Next, the first processing gas supply step S41 , the purge gas supply step S42 , the second processing gas supply step S43 , and the purge gas supply step S44 are performed a predetermined number of times (n times, where n is an integer of 1 or 2), thereby performing the membrane processing step S4 .

[0068] [First Processing Gas Supplying Step S41]

[0069] Next, the first process gas is rapidly supplied to the process chamber 201 in which the substrate S is disposed. Here, rapid supply refers to supplying a large flow rate of gas into the reaction tube 210 in a short time.

[0070] The subsequent storage process S411 and supply process S412 are performed a predetermined number of times (p times, where p is an integer greater than or equal to 1 or 2), thereby performing the first process gas supply process S41. FIG7 is a flowchart showing the details of the first process gas supply process S41, and FIG8 is a schematic diagram for explaining the first process gas supply process S41. In FIG8, the height of the gray rectangle in the tank 259 is used to schematically represent the amount of the first process gas stored in the tank 259. In addition, FIG8 shows, from the left, the amount of the first process gas stored in the tank 259 at the start of the storage process S411, at the end of the storage process S411 and the start of the supply process S411, at the end of the supply process S411 and the start of the storage process S411, and at the end of the storage process S411 and the start of the supply process S411. Below, as shown in FIG8, the case where the first process gas of a predetermined amount X or more is stored in the tank 259 at the start of the first process gas supply process S411 is described as an example.

[0071] <Storage Step S411>

[0072] In this step, valve 275 is opened while valves 254, 258, 303, 264, and 268 are closed. After a predetermined time has elapsed, valve 275 is closed. At this point, the first process gas, whose flow rate has been adjusted by MFC 253, is filled into tank 259, which stores a predetermined amount X or more of the first process gas. After the predetermined time has elapsed, valve 275 is closed.

[0073] At this time, the flow rate of the first process gas supplied to the tank 259 and / or the duration of the first process gas supply to the tank 259 are controlled based on the remaining amount of the first process gas in the tank 259. That is, the amount of the first process gas stored in the tank 259 during this step can be varied with each cycle of the first process gas supply step S41. By varying the flow rate of the first process gas supplied to the tank 259 (hereinafter referred to as the storage flow rate) and / or the duration of the first process gas supply to the tank 259 (hereinafter referred to as the storage time), the amount of the first process gas stored in the tank 259 during this step can be adjusted. Thus, even if the remaining amount of the first process gas in the tank 259 at the end of the supply step S412, described later, varies between cycles, the amount of the first process gas stored in the tank 259 at the start of the supply step S412 can be maintained constant between cycles.

[0074] Furthermore, in this step, either the storage flow rate or the storage time can be kept constant across multiple cycles, while the other can be varied at least once across multiple cycles. Specifically, the storage flow rate can be controlled by MFC 253 based on the remaining amount of first process gas in tank 259 at the end of supply step S412, while the storage time can be controlled by opening and closing valve 275. Alternatively, both the storage flow rate control based on MFC 253 and the storage time control based on opening and closing valve 275 can be controlled. By keeping the storage flow rate constant across multiple cycles and varying the storage time at least once across multiple cycles, the amount of first process gas stored in tank 259 can be easily controlled, even when the pressure in tank 259 reaches a high level. By keeping the storage time constant across multiple cycles and varying the storage flow rate at least once across multiple cycles, it is possible to reduce batch-to-batch processing variations associated with changes in the storage time.

[0075] <Supply Step S412>

[0076] The first process gas stored in tank 259 is rapidly supplied to the substrate S. Specifically, with valves 258, 275, 303, 264, and 268 closed, valve 254 is opened and, after a predetermined period of time, valve 254 is closed. At this point, the high-pressure first process gas stored in tank 259 is immediately supplied to the substrate S via gas supply pipe 251. The first process gas is supplied in large quantities from gas supply structure 212 via upstream rectifying section 214 into reaction tube 210 in a short period of time. The gas is then exposed and exhausted through the space above the substrate S, downstream rectifying section 215, gas exhaust structure 213, and exhaust pipe 281. At this point, valve 282 and APC valve 283 are open.

[0077] At this time, the amount of the first process gas remaining in the tank 259 at the end of this step (the time when the valve 254 is closed) is greater than or equal to the predetermined amount X. In other words, in this step, the valve 254 is closed when the amount of the first process gas in the tank 259 reaches the target amount Z, which is greater than the predetermined amount X. The predetermined amount X can be set to any value between 0.1% and 99% of the amount of the first process gas stored in the tank 259 at the start of the supply step S412 (the predetermined amount Y).

[0078] Here, when the predetermined amount X is set to 10 to 90% of the predetermined amount Y, it is easy to control the step coverage and the film forming rate to preferred values. In the case of less than 10%, the first processing gas with a low flow rate is supplied to the substrate S, and thus, there is a case where the step coverage is reduced. In addition, there is a case where the film forming rate is reduced as the temperature of the first processing gas assumed to undergo near-adiabatic expansion, as described later. In the case of more than 90%, the amount of the first processing gas supplied to the substrate S becomes less, and thus, there is a case where the film forming rate is reduced. Here, if the predetermined amount X is set to 20 to 85% of the predetermined amount Y, it is easier to control the step coverage and the film forming rate to preferred values, and therefore, it is preferred. In addition, if the predetermined amount X is set to 30 to 80% of the predetermined amount Y, it is very easy to control the step coverage and the film forming rate, and therefore, it is further preferred.

[0079] Thus, the first process gas can be rapidly supplied to the substrate S under desired conditions. Specifically, for example, the first process gas can be rapidly supplied so that at least one of the flow rate, residence time, decomposition rate, and partial pressure within the processing chamber 201 is within a desired range. In other words, at the end of this step, a predetermined amount X or more of the first process gas remains in the tank 259. Thus, in this step, for example, the flow rate of the first process gas can be maintained above a predetermined flow rate, thereby shortening the residence time of the first process gas within the processing chamber 201.

[0080] Here, the predetermined amount X remaining in the tank 259 at the end of this step is set so that the decomposition rate of the first process gas in the space where the substrate S is located, i.e., in the processing chamber 201, is below the predetermined decomposition rate. When the decomposition rate of the first process gas supplied to the substrate S exceeds the predetermined decomposition rate, the step coverage rate may be easily reduced. By suppressing the decomposition rate of the first process gas supplied to the substrate S from exceeding the predetermined decomposition rate, the step coverage rate can be improved.

[0081] That is, the predetermined amount X is set so that the flow rate of the first process gas in the processing chamber 201 in this step is greater than the predetermined flow rate. This can prevent the decomposition rate of the first process gas supplied to the substrate S from exceeding the predetermined decomposition rate, thereby improving the step coverage.

[0082] Furthermore, when the first process gas is supplied, reaction byproducts such as hydrogen chloride (HCl) are sometimes generated, which hinder the adsorption of the first process gas onto the substrate surface. Consequently, at least a portion of the adsorption sites on the surface of the substrate S adsorbs elements contained in the first process gas. However, reaction byproducts such as HCl adsorb onto adsorption sites on the substrate S, hindering the adsorption of elements contained in the first process gas. In this step, the flow rate of the first process gas in the processing chamber 201 is set to be greater than a predetermined flow rate, and the first process gas is supplied rapidly. This allows a large amount of the first process gas to be supplied to the substrate S in a short period of time from the start of supply. This reduces the number of adsorption sites for reaction byproducts on the substrate S, increasing the amount of adsorption of elements contained in the first process gas. This can increase the film formation rate and improve step coverage performance.

[0083] Here, the flow rate of the first process gas refers to a number that serves as an indicator of the distance traveled per unit time by the first process gas supplied to the processing chamber 201. Alternatively, within the processing chamber 201, a number that serves as an indicator of the distance traveled per unit time by the first process gas may be used. Alternatively, a number that serves as an indicator of the distance traveled per indicator unit time by the gas in the processing space may be used. Alternatively, the flow rate of the first process gas may be an average flow rate of the first process gas on the substrate S. Alternatively, as the flow rate of the first process gas, for example, the average flow rate from the time the first process gas is ejected from the gas supply unit such as the nozzle 223 into the processing chamber 201 until it reaches the exhaust hole 244, or the average flow rate from a certain part (or region) to another part (or region) may be used. Alternatively, the average flow rate of the first process gas in the processing space may be used. Alternatively, the average flow rate of the first process gas in the processing chamber 201 may be used. Alternatively, the flow rate of the first process gas at a certain point on the substrate S, in the processing space, or in the processing chamber 201 may be used.

[0084] Furthermore, by setting the flow rate of the first process gas in processing chamber 201 to be greater than or equal to a predetermined flow rate, the residence time of the first process gas in processing chamber 201 is reduced to less than or equal to a predetermined residence time. In other words, the predetermined amount X can also be set such that the residence time of the first process gas in the space where the substrate S is located during this step is less than or equal to the predetermined residence time. This prevents the decomposition rate of the first process gas supplied to the substrate S from exceeding a predetermined decomposition rate.

[0085] When forming a film within a recess (or groove, trench, or hole) formed on a substrate S, the higher the reactivity of the gas, the easier it is to adsorb toward the open side of the recess and the harder it is to adsorb toward the deep side of the recess. Therefore, when a gas that decomposes to produce a more reactive substance is used as the first process gas for film formation within the recess, by setting the residence time of the first process gas to be less than a predetermined residence time and / or setting the flow rate of the first process gas to be greater than a predetermined flow rate, the decomposition rate of the first process gas is reduced, thereby improving and increasing the step coverage.

[0086] Here, the residence time of the first process gas refers to a number that is an indicator of the time until the first process gas supplied to the process chamber 201 is exhausted from the process chamber 201. Alternatively, it can be set as a number that is an indicator of the time until the gas arriving in the process space escapes from the outside of the process space. Alternatively, the residence time of the first process gas can be set as the time until the first process gas arriving on the substrate S escapes from the substrate S. Furthermore, as the residence time of the first process gas, for example, it can be set as the time until the first process gas arriving in the process space escapes from the process space. Alternatively, the time from the time the first process gas is ejected from the gas supply unit such as the nozzle 223 to the time it reaches the exhaust hole 244 can be used. Alternatively, the time from the start of the supply of the first process gas to the end of the supply, such as the time from the time the valve 254 on the downstream side of the tank 259 is opened to the time the valve 254 is closed, etc., from the time when a predetermined component of the substrate processing device 10 starts or ends a predetermined operation to the time when the predetermined operation starts or ends can be used.

[0087] Alternatively, the predetermined amount X can be set so that the partial pressure of the first process gas in the space where the substrate S is located during this step is greater than or equal to the predetermined partial pressure. This allows the first process gas to more easily reach the deeper portion of the recess, thereby improving step coverage. Furthermore, the probability of the first process gas striking the surface of the substrate S per unit time and per unit area increases. This can increase the film thickness formed on the surface of the substrate S per unit time, or in other words, the film formation rate.

[0088] Alternatively, the predetermined amount X may be set so that the temperature in the tank 259 (eg, the temperature of the tank 259 itself or the temperature of the first processing gas in the tank 259) is above a predetermined temperature during this step. This can increase the film formation rate.

[0089] When the first process gas filled in the tank 259 is supplied from the tank 259 to the processing chamber 201, the first process gas in the tank 259 expands in a short period of time. At this time, the first process gas in the tank 259 undergoes a nearly adiabatic expansion process, so the temperature of the first process gas discharged from the tank 259 decreases. Consequently, the temperature of the tank 259, the substrate S, and the processing chamber 201 also decreases. Furthermore, due to these temperature decreases, the reaction between the substrate and the first process gas and / or the second process gas becomes difficult (the reactivity of the first process gas and / or the second process gas decreases), which may result in a decrease in the film formation rate.

[0090] Consider the case where the predetermined amount X is set in this step so that the temperature of the tank 259 or the temperature of the first process gas within the tank 259 is at or above a predetermined temperature. In this case, the decrease in the temperature of the first process gas can be minimized, thereby suppressing a decrease in the reactivity of the first process gas and / or the second process gas. Consequently, the film formation rate can be increased.

[0091] Alternatively, the predetermined amount X may be set so that the first process gas in the tank 259 does not liquefy or solidify during this step. This can suppress the generation of particles.

[0092] When the first process gas filled in the tank 259 is supplied from the tank 259 to the processing chamber 201, the first process gas is supplied to the substrate S through a nearly adiabatic expansion process, thereby decreasing the temperature of the first process gas and the tank 259. Simultaneously, the pressure within the tank 259 also decreases. Consequently, the temperature and pressure within the tank 259 may reach a point where the first process gas liquefies or solidifies. Furthermore, this liquefaction or solidification of the first process gas may cause particle generation.

[0093] In this step, the predetermined amount X of the first process gas in the tank 259 is set so that it does not liquefy or solidify. In this case, the temperature drop associated with the adiabatic expansion of the first process gas can be reduced. Therefore, the liquefaction or solidification of the first process gas can be minimized, thereby suppressing the generation of particles.

[0094] That is, the amount of the first process gas in the tank 259 at the end of the supply step S412 can be set so that the first process gas in the tank 259 does not liquefy or solidify from the start time to the end time of the supply step S412. Thus, for example, even when rapidly supplying a raw material gas that easily liquefies or solidifies due to a decrease in pressure and / or temperature, the raw material gas can be prevented from liquefying or solidifying and forming particles in the tank 259. In other words, the technology disclosed herein can also be suitably applied to the rapid supply of a process gas obtained by vaporizing a liquid or solid substance at normal temperature and pressure.

[0095] In this step, valve 258 may be opened to supply an inert gas into gas supply pipe 251 via gas supply pipe 255. Furthermore, to prevent the first processing gas from entering gas supply pipe 261, valves 268 and 264 may be opened to supply an inert gas into gas supply pipe 261.

[0096] <Execute the scheduled number of times S413>

[0097] The cycle of the storage step S411 and the supply step S412 is performed a predetermined number of times (p times, where p is an integer of 1 or 2 or greater), thereby forming a first layer having a desired thickness.

[0098] Furthermore, during rapid supply, the first process gas stored in the tank 259 expands in a nearly adiabatic expansion process and is supplied to the process chamber 201. Therefore, the rapid supply reduces the temperature of the first process gas and the temperature of the first process gas supply system 250 including the tank 259. The technology disclosed herein can control the magnitude of the pressure drop within the tank 259 based on the amount of first process gas within the tank 259 at the end of the rapid supply. Therefore, the technology disclosed herein can control the magnitude of the temperature drop within the tank 259 caused by the adiabatic expansion of the rapidly supplied first process gas.

[0099] Furthermore, the amount of the first process gas in the tank 259 can also be controlled by the pressure in the tank 259. That is, the amount of the first process gas in the tank 259 can also be controlled by the pressure in the tank 259 measured by the pressure sensor 301. Here, controlling the pressure in the tank 259 can be considered as controlling the amount of the first process gas in the tank 259. Therefore, the supply step S412 can be considered to be completed after the measuring unit (e.g., the pressure sensor 301) detects that the amount of gas in the tank 259 is equal to or greater than a predetermined amount.

[0100] That is, the supply step S412 may be performed so that the pressure within the tank 259 at the end of the supply step S412 is greater than a predetermined pressure. In this case, the decomposition rate of the first processing gas supplied to the substrate S can be prevented from exceeding a predetermined decomposition rate. The predetermined pressure can be set to any value between 0.1% and 99% of the pressure within the tank 259 at the start of the supply step S412.

[0101] Here, when the predetermined pressure is set to 10-90% of the pressure within tank 259 at the end of supply step S412, it is easier to control the step coverage and film formation rate to preferred values. If it is less than 10%, a low flow rate of the first process gas is supplied to substrate S, which may reduce the step coverage. Furthermore, as the temperature drop of the first process gas, which is assumed to undergo near-adiabatic expansion, increases, as will be described later, the film formation rate may decrease. If it exceeds 90%, the amount of first process gas supplied to substrate S decreases, which may reduce the film formation rate. Here, when the predetermined pressure is set to 20-85% of the pressure within tank 259 at the end of supply step S412, it is easier to control the step coverage and film formation rate to preferred values, which is therefore preferred. Furthermore, when the predetermined pressure is set to 30-80% of the pressure within tank 259 at the end of supply step S412, it is even easier to control the step coverage and film formation rate, which is further preferred.

[0102] [Purge Gas Supply Step S42]

[0103] In this step, a purge gas is supplied to the processing chamber 201 in which the substrate S is disposed. Specifically, after the first layer is formed on the substrate S, valves 254, 258, and 268 are opened while valves 275, 303, and 264 are closed, and an inert gas serving as a purge gas is supplied to the gas supply pipes 251 and 261 via the gas supply pipes 255 and 265. Meanwhile, valve 282 and APC valve 283 of the exhaust pipe 281 remain open, and the processing chamber 201 is evacuated and purged by the vacuum pump 284.

[0104] [Second Processing Gas Supplying Step S43]

[0105] In this step, valve 264 is opened while valves 254, 258, 275, 303, and 268 are closed, and then closed after a predetermined time has elapsed. At this point, the second process gas, whose flow rate is regulated by MFC 263, is supplied to substrate S via gas supply pipe 261. The second process gas is supplied from gas supply structure 212 through upstream rectifying section 214 into reaction tube 210, where it is exposed and exhausted through the space above substrate S, downstream rectifying section 215, gas exhaust structure 213, and exhaust pipe 281. At this point, valve 282 and APC valve 283 are open. Alternatively, valve 268 may be opened to allow inert gas to flow through gas supply pipe 261 via gas supply pipe 265. Furthermore, to prevent the second process gas from entering gas supply pipe 251, valves 258 and 254 may be opened to allow inert gas to flow through gas supply pipe 251. This allows the first layer on substrate S to be modified into the second layer.

[0106] [Purge Gas Supply Step S44]

[0107] In this step, purge gas is supplied to the processing chamber 201 containing the substrate S through the same process as the purge gas supply step S42 described above. Specifically, after the first layer on the substrate S is modified into the second layer, valves 254, 258, and 268 are opened while valves 275, 303, and 264 are closed, and an inert gas serving as a purge gas is supplied to the gas supply pipes 251 and 261 via the gas supply pipes 255 and 265. Meanwhile, valve 282 and APC valve 283 of the exhaust pipe 281 remain open, and the processing chamber 201 is evacuated by the vacuum pump 284, thereby purging the processing chamber 201.

[0108] [Implementing the scheduled number of times S45]

[0109] The above-described first process gas supply step S41, purge gas supply step S42, second process gas supply step S43, and purge gas supply step S44 are cycled a predetermined number of times (n times, where n is an integer greater than or equal to 1 or 2). Thus, a film having a predetermined thickness containing elements derived from the first process gas and elements derived from the second process gas is formed on the substrate S having the recess. In this way, a film having improved step coverage and a higher film formation rate can be formed on the substrate S having the recess.

[0110] (Atmospheric Pressure Restoration Step S5)

[0111] After the film processing on the substrate S is completed, an inert gas is supplied into the processing chamber 201 and exhausted from the exhaust pipe 281. The inert gas acts as a purge gas, thereby purging the processing chamber 201 with the inert gas, and removing the gas and reaction byproducts remaining in the processing chamber 201 from the processing chamber 201. Afterwards, the atmosphere in the processing chamber 201 is replaced with the inert gas, and the pressure in the processing chamber 201 is restored to normal pressure (return to atmospheric pressure).

[0112] (Substrate Unloading Step S6)

[0113] The susceptor flange 401 is lowered by the vertical drive mechanism 400, opening the lower end of the reaction tube 210. The processed substrate S, supported by the substrate support 300, is then unloaded from the transfer chamber 217 (wafer boat unloading). The processed substrate S is then removed from the substrate support 300 in the transfer chamber 217 (wafer removal).

[0114] (3) Preliminary evaluation process

[0115] Next, a description will be given of a preliminary evaluation step performed before the above-mentioned substrate processing step.

[0116] In the preliminary evaluation step, a predetermined method is used to obtain the time from the start of the supply step S412 of the first process gas supply step S41 to the time when the amount of the first process gas in the tank 259 reaches the predetermined amount X. The data obtained in this step is then used in the aforementioned substrate processing step. Predetermined methods include, for example, data obtained from previously performed substrate processing, experimental data, predictions based on this data, numerical calculations including analysis using numerical fluid dynamics (CFD), machine learning, deep learning, and the like.

[0117] Furthermore, the current amount of the first process gas in the tank 259 is determined based on the pressure within the tank 259 measured by the pressure sensor 301. Regarding the supply step S412, the valve 275, MFC 253, and other components are controlled so that the supply step S412 ends at a time before or after the time obtained in the preliminary evaluation step has elapsed since the start of the supply step S412. This eliminates the need for control to terminate rapid supply at the time when the amount of the first process gas in the tank 259, as measured by the pressure sensor 301, reaches or exceeds a predetermined amount X. This simplifies the control of the controller 600.

[0118] Furthermore, while the airflow is shown as horizontal in the above description, it suffices to form a horizontal mainstream of gas overall. A vertically diffuse airflow is also acceptable as long as it does not affect the uniform processing of multiple substrates. Furthermore, while the above descriptions include terms such as "same degree," "equal," and "equal," these naturally encompass terms that are substantially the same.

[0119] (Other embodiments)

[0120] As mentioned above, although embodiment of this aspect was demonstrated concretely, it is not limited to this, Various changes are possible within the range which does not deviate from the summary.

[0121] In the above-described method, the case of using a raw material gas as the first process gas and a reactive gas as the second process gas is described, but the present invention is not limited thereto. Reactive gas can also be used as the first process gas and a raw material gas as the second process gas. In addition, the first process gas supply process can be repeated a predetermined number of times after the second process gas supply process. That is, the reactive gas can be supplied after the raw material gas is quickly supplied, or the reactive gas can be supplied quickly after the raw material gas is supplied. In addition, both the raw material gas and the reactive gas can be supplied quickly. That is, the reactive gas can be supplied quickly after the raw material gas is quickly supplied. The above-described effects can also be obtained in these cases.

[0122] As the raw material gas, for example, a gas containing a predetermined element such as tungsten (W), titanium (Ti), molybdenum (Mo), tantalum (Ta), cobalt (Co), yttrium (Y), ruthenium (Ru), hafnium (Hf), zirconium (Zr), aluminum (Al), or silicon (Si) can be used. As the raw material gas, one or more of these gases can be used. As the raw material gas, a gas excited by plasma or the like can also be used.

[0123] As the gas containing the predetermined element, for example, a gas containing the predetermined halogen element containing the predetermined element and the halogen element can be used. As the gas containing the predetermined halogen element, for example, a gas containing hexachlorotungsten (WCl6), hexafluorotungsten (WF6), titanium tetrachloride (TiCl4), titanium tetrafluoride (TiF4), molybdenum pentachloride (MoCl5), molybdenum pentafluoride (MoF5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum oxychloride tetrachloride (MoOCl4), tantalum pentachloride (TaCl5), tantalum pentafluoride (TaF5), cobalt difluoride (CoF2), cobalt dichloride (CoCl2), yttrium trifluoride (YF3), yttrium trichloride (YCl3), ruthenium trichloride (RuCl3), trifluoromethane (TFA), tungsten trichloride ... Gases such as ruthenium (RuF3), hafnium tetrachloride (HfCl4), hafnium tetrafluoride (HfF4), zirconium tetrachloride (ZrCl4), zirconium tetrafluoride (ZrF4), aluminum trichloride (AlCl3), aluminum trifluoride (AlF3), dichlorosilane (SiH2Cl2), 1,2-dichlorodisilane (Si2H4Cl2), 1,1,1-trichlorodisilane (Si2H3Cl3), 1,1,2-trichlorodisilane (Si2H3Cl3), pentachlorodisilane (Si2HCl5), hexachlorodisilane (Si2Cl6), and tetrafluorosilane (SiF4) can be used. In addition, as a gas containing a predetermined element, for example, monosilane (SiH4), disilane (Si2H6), trisilane (Si3H8), butasilane (Si4H 10 ) etc. As the gas containing the predetermined element, one or more of them can be used.

[0124] In addition, as a gas containing a predetermined element, for example, a gas containing an organic predetermined element having a predetermined element and an organic ligand can be used. As a gas containing an organic predetermined element, for example, a gas containing hexakidimethylamidotungsten (W2[N(CH3)2]6), bis-tert-butylimide bis-dimethylamide tungsten ((t-C4H9NH)2W=(Nt-C4H9)2), tetraethylmethylamidotitanium (Ti[N(C2H5)(CH3)]4), bisethylcyclopentadienylruthenium (Ru(EtCp)2), biscyclopentadienylruthenium (Ru(Cp)2), tetraethylmethylamidohafnium (Hf[N(Me)Et]4), tetradiethylamidohafnium (Hf[N(Et)2 ]4), tetrakisdimethylaminohafnium (Hf[N(Me)2]4), trisdimethylaminocyclopentadienylhafnium ((Cp)Hf[N(Me)2]3), tetraethylmethylaminozirconium (Zr[N(Me)]4), tetrakisdiethylaminozirconium (Zr[N(Et)2]4), tetrakisdimethylaminozirconium (Zr[N(Me)2]4), trisdimethylaminocyclopentadienylzirconium ((Cp)Zr[N(Me)2]3), trimethylaluminum (Al(CH3)3), trisdimethylaminosilane (Si[N(CH3)2]3H), etc. As a gas containing a predetermined element, one or more of them can be used.

[0125] As the reaction gas, for example, a gas containing a reducing gas, an oxidizing gas, a nitriding gas, a sulfiding gas, a seleniding gas, a telluride gas, etc. can be used. As the reaction gas, one or more of these gases can be used. As the reaction gas, a gas excited by plasma or the like can also be used. For example, when one of the first process gas and the second process gas is a gas containing a predetermined element and the other is a reducing gas, a film composed of a simple substance of the predetermined element can be formed on the substrate S. In addition, for example, when one of the first process gas and the second process gas is a gas containing a predetermined element and the other is an oxidizing gas, a nitriding gas, a sulfiding gas, a seleniding gas, or a telluride gas, an oxide film of the predetermined element, a nitride film of the predetermined element, a sulfide film of the predetermined element, a seleniding film of the predetermined element, or a telluride film of the predetermined element can be formed on the wafer.

[0126] As the reducing gas, for example, one or more gases including hydrogen (H2) gas, deuterium (D2) gas, borane (BH3) gas, diborane (B2H6) gas, carbon monoxide (CO) gas, ammonia (NH3) gas, monosilane (SiH4) gas, disilane (Si2H6) gas, trisilane (Si3H8) gas, germane (GeH4) gas, and germane (Ge2H6) gas can be used. In addition, as the reaction gas, for example, an oxidizing gas containing oxygen (O) gas can be used. As the oxidizing gas, for example, one or more gases including oxygen (O2), ozone (O3), water vapor (H2O), a mixed gas of H2 and O2, hydrogen peroxide (H2O2), and nitrous oxide (N2O) can be used. As the nitriding gas, for example, one or more hydrogen nitride-based gases such as ammonia (NH3) gas, diazene (N2H2) gas, hydrazine (N2H4) gas, and N3H8 gas can be used. As the sulfiding gas, for example, a gas containing hydrogen sulfide (H2S), hydrogen disulfide (H2S2), ammonium disulfide ((NH4)2S), dimethyl sulfide ((CH3)2S), etc. can be used. As the sulfiding gas, more than one of them can be used. As the selenization gas, for example, a gas containing selenane (H2Se), diselenane (H2Se2), dimethyl selenide ((CH3)2Se), etc. can be used. As the selenization gas, more than one of them can be used. As the telluride gas, for example, a gas containing hydrogen telluride (H2Te), hydrogen ditelluride (H2Te2), dimethyl selenide ((CH3)2Te), etc. can be used. As the telluride gas, more than one of them can be used.

[0127] As the inert gas, for example, rare gases such as helium (He), argon (Ar), neon (Ne) gas, and xenon (Xe) gas, nitrogen (N 2 ), etc. can be used. As the inert gas, one or more of these can be used.

[0128] In addition, in the above-mentioned method, the case of quickly supplying the first processing gas using a tank 259 is described, but the present method is not limited to this. That is, a plurality of tanks can also be used to quickly supply the first processing gas to the substrate S. By using a plurality of tanks, while the first processing gas is being stored in one tank, the first processing gas can be quickly supplied from another tank. In this method, the same effect as in the above-mentioned method is obtained. In addition, in this method, productivity can be further improved. In addition, the first processing gas can also be quickly supplied to the substrate S from at least a portion of the plurality of tanks at the same time. In this method, the same effect as in the above-mentioned method is obtained. In addition, in this method, the flow rate of the first processing gas in the processing chamber 201 can be further easily increased. As a result, the step coverage rate can be easily improved.

[0129] Furthermore, when using two or more tanks 259 for rapid supply of the first process gas, the rapid supply of the first process gas from the two or more tanks 259 to the substrate S can be performed at least partially simultaneously. This method also achieves the same effects as the above method. Furthermore, this method can further reduce the amount of first process gas supplied from each tank. This makes it easier to supply a sufficient amount of first process gas even when the predetermined amount X is set to a large value. Consequently, the step coverage rate can be further improved.

[0130] Furthermore, while the first process gas supply system 250 described above is described as having a tank 259, this method is not limited thereto. Specifically, the second process gas supply system 260 may also include a tank to rapidly supply the second process gas. Alternatively, each of the first process gas supply system 250 and the second process gas supply system 260 may include a tank to rapidly supply the first process gas and the second process gas, respectively. This method also achieves the same effects as the above method.

[0131] In addition, in the above-described method, the amount of the first process gas remaining in the tank 259 at the end time point of the supply step S412 (the time point when the valve 254 is closed) is greater than or equal to the predetermined amount X. However, the present disclosure is not limited thereto. For example, the amount of the gas containing the first process gas remaining in the tank 259 at the end time point of the supply step S412 (the time point when the valve 254 is closed) is greater than or equal to the predetermined amount X. Here, as the gas containing the first process gas, for example, a gas containing the first process gas obtained by mixing the first process gas with a gas different from the first process gas (for example, N2 gas as an inert gas) can be used. In addition, for example, the amount of the gas different from the first process gas remaining in the tank 259 at the end time point of the supply step S412 (the time point when the valve 254 is closed) is greater than or equal to the predetermined amount X. In these methods, the same effects as those of the above-described methods are also obtained.

[0132] Furthermore, the above-described method exemplifies the case of forming a film on a substrate S using a first process gas and a second process gas during film formation processing performed by a substrate processing apparatus. However, the present method is not limited thereto. In other words, other types of gases may be used as process gases in the film processing step to form other types of thin films. Furthermore, the present method is applicable even when three or more process gases are used.

[0133] In addition, in the above embodiment, film formation is cited as an example of the film treatment process, but the present embodiment is not limited thereto. That is, the present embodiment can also be applied to film formation processes other than the film formation processes cited in the above embodiment.

[0134] In addition, in the above-mentioned manner, an example of forming a film using a batch-type substrate processing device that processes multiple substrates at a time is described. The present disclosure is not limited to the above-mentioned manner. For example, it can also be appropriately applied when forming a film using a single-piece substrate processing device that processes one or several substrates at a time. In addition, in the above-mentioned manner, an example of forming a film using a substrate processing device having a hot-wall type processing furnace is described. The present disclosure is not limited to the above-mentioned manner. It can also be appropriately applied when forming a film using a substrate processing device having a cold-wall type processing furnace. When using these substrate processing devices, each process can also be performed using the same processing procedures and processing conditions as the above-mentioned manner and modified example, and the same effects as the above-mentioned manner and modified example can be obtained.

[0135] The above-mentioned embodiments and modifications can be used in combination as appropriate. The processing procedure and processing conditions in this case can be, for example, the same as those in the above-mentioned embodiments and modifications.

[0136] Explanation of symbols

[0137] S substrate

[0138] 259 tanks (storage department).

Claims

1. A substrate processing method, characterized in that: The substrate processing method includes: a supply step of supplying the processing gas from a storage portion storing the processing gas to the substrate; In the supply step, the amount of gas in the storage unit at the end of the supply step is set to be equal to or greater than a predetermined amount.

2. The substrate processing method according to claim 1, wherein: In the supply step, the amount of the gas including the processing gas in the storage unit at the end of the supply step is set to be equal to or greater than a predetermined amount.

3. The substrate processing method according to claim 1, wherein: The predetermined amount is set so that the decomposition rate of the processing gas in the space where the substrate is located during the supply step is equal to or lower than a predetermined decomposition rate.

4. The substrate processing method according to claim 1, wherein: The predetermined amount is set so that a flow rate of the processing gas in a space where the substrate is located during the supply step is equal to or higher than a predetermined flow rate.

5. The substrate processing method according to claim 1, wherein: The predetermined amount is set so that the residence time of the processing gas in the space where the substrate is located during the supply step is equal to or less than a predetermined residence time.

6. The substrate processing method according to claim 1, wherein: The predetermined amount is set so that a partial pressure of the processing gas in a space where the substrate is located during the supply step is equal to or greater than a predetermined partial pressure.

7. The substrate processing method according to claim 1, wherein: The predetermined amount is set so that the temperature of the storage portion is equal to or higher than a predetermined temperature during the supply step.

8. The substrate processing method according to claim 1, wherein: The predetermined amount is set so that the processing gas existing in the storage portion does not liquefy or solidify during the supply step.

9. The substrate processing method according to claim 1, wherein: In the supplying step, the processing gas is supplied to the substrate from the plurality of storage units.

10. The substrate processing method according to claim 9, wherein: In the supplying step, supply of the processing gas from the two or more storage units to the substrate is at least partially performed simultaneously.

11. The substrate processing method according to claim 1, wherein: The amount of the process gas in the storage portion is controlled by the pressure in the storage portion.

12. The substrate processing method according to claim 1, wherein: The supply step is terminated after it is detected that the amount of gas in the storage unit is equal to or greater than the predetermined amount.

13. The substrate processing method according to claim 1, wherein: The substrate processing method further comprises: a preliminary evaluation step of using a predetermined method to determine the time from the start time of the supply step to the time when the amount of the processing gas in the storage unit reaches a predetermined amount; The supply process ends at a time point before the time point elapses or at a time point after the time point elapses from the start time point of the supply process.

14. The substrate processing method according to any one of claims 1 to 13, wherein: The substrate processing method further includes a storage step of storing the processing gas in the storage portion, and performing a cycle of the storage step and the supply step a predetermined number of times.

15. The substrate processing method according to claim 14, wherein: In the storage step, the flow rate of the process gas supplied to the storage part and / or the time for which the process gas is continuously supplied to the storage part are changed at least once in the plurality of cycles according to the amount of the process gas in the storage part.

16. The substrate processing method according to claim 15, wherein: In the storage step, a flow rate of the process gas supplied to the storage portion is kept constant between the plurality of cycles, and a time for which the process gas is continuously supplied to the storage portion is changed at least once in the plurality of cycles.

17. The substrate processing method according to claim 15, wherein: In the storage step, a time for which the processing gas is continuously supplied to the storage portion is kept constant between the plurality of cycles, and a flow rate of the processing gas supplied to the storage portion is changed at least once in the plurality of cycles.

18. A method for manufacturing a semiconductor device, characterized in that: The manufacturing method includes: a supply step of supplying the processing gas from a storage portion storing the processing gas to the substrate; In the supply step, the amount of gas in the storage unit at the end of the supply step is set to be equal to or greater than a predetermined amount.

19. A substrate processing device, characterized in that: have: a processing chamber in which the substrate is disposed; a storage portion storing the process gas therein; a gas control unit configured to control supply of the processing gas from the storage unit to the substrate; and The control unit is configured to control the gas control unit so as to perform the following process: a supply process of supplying the processing gas from the storage unit to the substrate, and a process of setting the amount of gas in the storage unit at the end time of the supply process to be greater than a predetermined amount.

20. A program, characterized in that A computer is used to cause a substrate processing apparatus to execute the following process: a process of supplying a processing gas from a storage portion storing the processing gas to a substrate, wherein the amount of gas in the storage portion at the end time of the supply process is set to be greater than a predetermined amount.

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