Laser processing mask plate and projection-type laser processing method using the same

Abstract

The invention provides a laser processing mask group and a projection type laser processing method using the same. Comprising the following steps that a machining laser device, a laser machining mask set and a projection lens are provided, and the laser machining mask set, the projection lens and a machined workpiece are sequentially arranged on a propagation path of a laser beam in the propagation direction of the laser beam generated by the machining laser device, wherein the laser processing mask group comprises an initial mask and a correction mask, and the correction mask is arranged between the initial mask and the projection lens or the initial mask is arranged between the correction mask and the projection lens; and carrying out a laser processing process on the processing workpiece. Wherein the size of the laser beam projected on the focusing plane after passing through the laser processing mask group and the projection lens is effectively controlled by means of the correction mask.

Description

Technical Field

[0001] The present disclosure relates to a laser processing mask set and a projection laser processing method using the mask set, and in particular to a laser processing mask set with a correction mask to effectively control the size of a laser beam projected on a focal plane after passing through the laser processing mask set and a projection lens. Background Art

[0002] See Figure 4A , which is a cross-sectional schematic diagram of a specific embodiment of a projection laser processing system using a laser processing mask in the prior art. Please also refer to Figure 4B , which is Figure 4A Schematic top view of the laser processing mask of the embodiment. Prior art A projection laser processing system 9 using a laser processing mask includes: a processing laser device 91, a laser processing mask 90, and a projection lens 92. The laser processing mask 90, the projection lens 92, and the processing workpiece 93 are sequentially arranged on the propagation path of the laser beam 94 along the propagation direction of the laser beam 94 generated by the processing laser device 91. The laser processing mask 90 is an amplitude mask. The laser processing mask 90 includes a mask base 97 and a light shielding layer 98. The light shielding layer 98 is formed on the surface 99 of the mask base 97; the laser processing mask 90 includes a mask area 96 where the light shielding layer 98 is formed and a non-mask area 95 (i.e., an area outside the mask area 96) where the light shielding layer 98 is not formed. The shape of the non-mask area 95 is circular. The wavelength of the laser beam 94 generated by the processing laser device 91 is 248 nm; the magnification of the projection lens 92 is 0.4 times; the circular diameter of the non-mask area 95 is equal to 7.5 μm; there is a light-shielding projection spacing p between the mask area 96 of the laser processing mask 90 and the projection lens 92, and the light-shielding projection spacing p is equal to 60 mm. Please also refer to Figure 4C , which simulates the existing technology Figure 4A Schematic diagram of the irradiation profile of the laser beam projected onto the focal plane after passing through the laser processing mask and the projection lens of the embodiment. Figure 4D , which is the prior art Figure 4C The cross-sectional view of the laser beam's irradiance profile along the radial direction (the R axis passes through the X axis = 0 and the Y axis = 0). After simulation, when the laser beam 94 passes through the non-mask area 95 of the laser processing mask 90 and then passes through the projection lens 92, the irradiance profile of the laser beam is as follows: Figure 4C As shown. Figure 4D The peak full width at half maximum (FWHM) of the laser beam irradiance profile along the radial section is 2.336 μm. Figure 4DIt can be observed that the verticality of the laser beam's irradiance profile along the radial section is not very high; when the workpiece 93 is laser drilled, if the verticality of the laser beam's irradiance profile along the radial section is not high enough, the verticality of the hole drilled by the laser will not be very high, and a hole with a wide opening and a narrow bottom will be easily formed. In addition, on both sides outside the central spot of the laser, for example, Figure 4D The diffraction patterns generated after the main laser beam 94 passes through the non-mask area 95 of the laser processing mask 90 in the area where the middle R axis is less than -2μm or greater than 2μm; when the workpiece 93 is subjected to laser drilling processing, not only the central spot of the laser is used for laser drilling to drill a hole, but the surface of the workpiece 93 around the opening of the drilled hole is also irradiated by these diffraction patterns. Although the radiation illumination of these diffraction patterns is low, they may also damage the surface structure of the workpiece 93 around the opening of the hole.

[0003] See Figure 5A , which is a cross-sectional schematic diagram of another specific embodiment of a projection laser processing system using a laser processing mask in the prior art. Please also refer to Figure 5B , which is Figure 5A A schematic top view of a laser processing mask according to an embodiment. Figure 5A and Figure 5B The main structure of the specific embodiment and Figure 5A and Figure 5B The structure of the embodiment is substantially the same, except that the non-masked area 95 of the laser processing mask 90 is rectangular, with the long side of the rectangle being 7.5 μm and the short side being 6 μm. The wavelength of the laser beam 94 generated by the processing laser device 91 is 248 nm; the magnification of the projection lens 92 is 0.4 times; and there is a light-shielding projection spacing p between the mask area 96 of the laser processing mask 90 and the projection lens 92, which is equal to 60 mm. Please also refer to Figure 5C , which simulates the existing technology Figure 5A Schematic diagram of the irradiance profile of the laser beam projected onto the focal plane after passing through the laser processing mask and the projection lens of the embodiment. Please also refer to Figure 5D as well as Figure 5E , which are the prior art Figure 5C Schematic diagram of the cross-section of the laser beam irradiance profile along the X-axis and the prior art Figure 5C The cross-sectional diagram of the laser beam irradiance profile along the Y axis is shown in FIG. After simulation, when the laser beam 94 passes through the non-mask area 95 of the laser processing mask 90 and then passes through the projection lens 92, the irradiance profile of the laser beam is as follows: Figure 5C As shown. Figure 5DThe peak full width at half maximum of the laser beam irradiance profile along the X-axis is 2.293 μm. Figure 5E The peak full width at half maximum of the laser beam irradiance profile along the Y-axis is 2.349 μm. Figure 5D It can be observed that the verticality of the cross-section of the laser beam's irradiance profile along the X-axis is not very high. When the workpiece 93 is subjected to a laser cutting groove processing process, if the laser beam 94 is moving along the Y-axis while processing and a long groove along the Y-axis is cut, if the verticality of the cross-section of the laser beam's irradiance profile along the X-axis is not high enough, the verticality of the cross-section of the long groove along the X-axis produced by the laser cutting groove processing will not be too high, and it is easy to form a long groove with a wider opening and a narrower bottom along the X-axis (a long groove along the Y-axis). In addition, on both sides of the cross-section of the laser beam's irradiance profile along the X-axis, for example, Figure 5D The diffraction patterns generated by the main laser beam 94 after passing through the non-mask area 95 of the laser processing mask 90 in the area where the X-axis is less than -2μm or greater than 2μm; when the workpiece 93 is subjected to the laser cutting groove processing process, if the laser beam 94 moves along the Y-axis while processing and cuts a long groove along the Y-axis, the surface of the workpiece 93 around the opening of the cross-section of the cut long groove along the X-axis will also be irradiated by these diffraction patterns. Although the radiation illumination of these diffraction patterns is low, they may also damage the surface structure of the workpiece 93 around the opening of the long groove. Summary of the Invention

[0004] The technical problem solved by the present disclosure is how to provide a laser processing mask for projection laser processing to effectively control the size of the laser beam projected on the focal plane after passing through the laser processing mask set and the projection lens.

[0005] Additional aspects and advantages of the disclosure will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the disclosure.

[0006] According to one aspect of the present disclosure, a laser processing mask set for projection laser processing is provided. The laser processing mask set and a projection lens are sequentially arranged along the propagation direction of a laser beam generated by a processing laser device, along the propagation path of the laser beam. The laser processing mask set includes an initial mask and a first correction mask. The initial mask is an amplitude mask. The initial mask includes an initial mask region and one or more initial non-masked regions. A first correction mask is arranged between the initial mask and the projection lens, or between the initial mask and the projection lens. The first correction mask includes one or more first mapping regions. The one or more first mapping regions of the first correction mask and the one or more initial non-masked regions of the initial mask are mapped onto regions on the first correction mask along the propagation path of the laser beam. Each of the one or more first mapping regions has a shape and area identical to the shape and area of ​​the corresponding one or more initial non-masked regions. Any of the one or more first mapping regions is an amplitude mask or a phase mask. The first correction mask is used to effectively control the size of the laser beam projected onto a focal plane after passing through the laser processing mask set and the projection lens.

[0007] According to another aspect of the present disclosure, a projection laser processing method using a laser processing mask group is also provided, comprising the following steps: providing a processing laser device, a laser processing mask group and a projection lens, so that the laser processing mask group, the projection lens and the processing workpiece are sequentially arranged on the propagation path of the laser beam along the propagation direction of the laser beam generated by the processing laser device, the laser processing mask group includes an initial mask and a first correction mask, the initial mask is an amplitude mask, the first correction mask is an amplitude mask or a phase mask, the first correction mask is arranged between the initial mask and the projection lens or the initial mask is arranged between the first correction mask and the projection lens; and performing a laser processing process on the processing workpiece; wherein the first correction mask is used to effectively control the size of the laser beam projected on the focal plane after passing through the laser processing mask group and the projection lens.

[0008] In an exemplary embodiment of the present disclosure, the laser processing process is a laser drilling process, a laser cutting process, a laser polishing process, a laser patterning process, or any combination thereof.

[0009] In an exemplary embodiment of the present disclosure, at least one of the one or more first mapping regions is an amplitude mask, and each of the one or more first mapping regions of the amplitude mask includes a first mapping mask region and a first mapping non-mask region.

[0010] In an exemplary embodiment of the present disclosure, at least one of the one or more first mapping regions of the amplitude mask is in a circular shape.

[0011] In an exemplary embodiment of the present disclosure, a first correction mask is disposed between the initial mask and the projection lens. At least one of the one or more first mapping regions of the amplitude-modulated mask and its first mapping mask region are circular and annular, respectively. The annular region is symmetrical about the center of the circle.

[0012] In an exemplary embodiment of the present disclosure, the ratio of the inner diameter of the ring to the diameter of the circle is between 2:15 and 2:5, and the ratio of the outer diameter of the ring to the diameter of the circle is between 2:3 and 14:15.

[0013] In an exemplary embodiment of the present disclosure, the diameter of the circle is greater than or equal to 10 times the wavelength of the laser beam and less than or equal to 91 times the wavelength of the laser beam. Along the propagation direction of the laser beam, a distance between the initial mask area and the first mapped mask area is greater than or equal to 403 times the wavelength of the laser beam and less than or equal to 24194 times the wavelength of the laser beam.

[0014] In an exemplary embodiment of the present disclosure, the first correction mask further includes one or more peripheral regions, each of the one or more peripheral regions surrounding a corresponding one of the one or more first mapping regions.

[0015] In an exemplary embodiment of the present disclosure, any one of the one or more surrounding areas and the corresponding one of the one or more first mapping areas are both amplitude masks or both phase masks.

[0016] In an exemplary embodiment of the present disclosure, at least one of the one or more surrounding regions and the corresponding one or more first mapping regions are amplitude masks. Each of the one or more surrounding regions of the amplitude mask includes a surrounding mask region and a surrounding non-masked region. Each of the one or more first mapping regions of the amplitude mask includes a first mapped mask region and a first mapped non-masked region.

[0017] In an exemplary embodiment of the present disclosure, at least one of the one or more first mapping regions of the amplitude mask is in the shape of a mapping rectangle.

[0018] In an exemplary embodiment of the present disclosure, a peripheral mask region of at least one of the one or more peripheral regions of the amplitude mask is connected to a first mapping mask region of the corresponding one or more first mapping regions of the amplitude mask.

[0019] In an exemplary embodiment of the present disclosure, a first correction mask is disposed between the initial mask and the projection lens. A surrounding mask region of at least one of the one or more surrounding regions of the amplitude mask is connected to a first mapping mask region of the corresponding one or more first mapping regions of the amplitude mask to form a connecting rectangle.

[0020] In an exemplary embodiment of the present disclosure, a first correction mask is disposed between the initial mask and the projection lens. One of the one or more first mapping regions of the amplitude mask is shaped like a mapping rectangle. The first mapping mask region of one of the one or more first mapping regions of the amplitude mask is connected to the surrounding mask regions of the corresponding one or more surrounding regions of the amplitude mask to form a connecting rectangle. The geometric center of the mapping rectangle coincides with the geometric center of the connecting rectangle. The long side of the mapping rectangle is parallel to the long side of the connecting rectangle.

[0021] In an exemplary embodiment of the present disclosure, the long side of the mapping rectangle is smaller than the long side of the connecting rectangle, and the short side of the mapping rectangle is larger than the short side of the connecting rectangle.

[0022] In an exemplary embodiment of the present disclosure, the ratio of the long side of the mapping rectangle to the long side of the connecting rectangle is between 5:12 and 15:44, and the ratio of the short side of the mapping rectangle to the short side of the connecting rectangle is between 2:1 and 6:5.

[0023] In an exemplary embodiment of the present disclosure, the long side of the mapping rectangle is greater than or equal to 10 times the wavelength of the laser beam and less than or equal to 91 times the wavelength of the laser beam. The short side of the mapping rectangle is greater than or equal to 8 times the wavelength of the laser beam and less than or equal to 73 times the wavelength of the laser beam. Along the propagation direction of the laser beam, a spacing is provided between the initial mask area and the first mapping mask area, and the spacing is greater than or equal to 403 times the wavelength of the laser beam and less than or equal to 24,194 times the wavelength of the laser beam.

[0024] In an exemplary embodiment of the present disclosure, the laser processing mask set further includes a second calibration mask. The initial mask is positioned between the first and second calibration masks, or the first calibration mask is positioned between the initial and second calibration masks. The second calibration mask is an amplitude mask or a phase mask. The first and second calibration masks are used to effectively control the size of the laser beam projected onto the focal plane after passing through the laser processing mask set and the projection lens.

[0025] In an exemplary embodiment of the present disclosure, the second correction mask includes one or more second mapping regions. The one or more second mapping regions of the second correction mask are regions on the second correction mask mapped to one or more initial non-masked regions of the initial mask along the propagation path of the laser beam. Each of the one or more second mapping regions has a shape and area identical to the shape and area of ​​a corresponding one of the one or more initial non-masked regions. Any of the one or more second mapping regions is an amplitude mask or a phase mask.

[0026] In an exemplary embodiment of the present disclosure, at least one of the one or more second mapping regions is an amplitude mask, and each of the one or more second mapping regions of the amplitude mask includes a second mapping mask region and a second mapping non-mask region.

[0027] In an exemplary embodiment of the present disclosure, a preliminary mask includes a preliminary mask base and a preliminary light-shielding layer. The preliminary light-shielding layer is formed on a first surface of the preliminary mask base within a preliminary mask region of the preliminary mask.

[0028] In an exemplary embodiment of the present disclosure, the initial mask substrate has a second surface. The second surface is opposite to the first surface of the initial mask substrate along a propagation path of the laser beam. The first correction mask includes a first correction light-shielding layer. The first correction light-shielding layer is formed on the second surface of the initial mask substrate. The first correction light-shielding layer is a first mapping mask region of one or more first mapping regions of the first correction mask.

[0029] In an exemplary embodiment of the present disclosure, the initial mask base of the initial mask includes one or more through-regions. The one or more through-regions penetrate the initial mask base along the propagation direction of the laser beam. The one or more through-regions are one or more initial non-mask regions of the initial mask.

[0030] In an exemplary embodiment of the present disclosure, the initial mask includes an initial mask mask base. The initial mask mask base includes one or more penetration regions and non-penetration regions. The one or more penetration regions penetrate the initial mask mask base along the propagation direction of the laser beam. The one or more penetration regions are one or more initial non-masked regions of the initial mask. The non-penetration regions are initial mask regions of the initial mask.

[0031] In an exemplary embodiment of the present disclosure, the first correction mask includes a first correction mask base and a first correction light-shielding layer. The first correction light-shielding layer is formed on a surface of the first correction mask base within a first mapping mask region of one or more first mapping regions of the first correction mask.

[0032] The laser processing mask set and the projection laser processing method using the mask set disclosed in the present invention have the following beneficial effects:

[0033] The laser processing mask set disclosed in the present invention can effectively control the size of the laser beam projected on the focal plane after passing through the laser processing mask set and the projection lens by means of a correction mask.

[0034] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The accompanying drawings are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification, are used to explain the principles of the present disclosure. Obviously, the drawings described below are only some embodiments of the present disclosure, and those skilled in the art can derive other drawings based on these drawings without inventive effort.

[0036] Figure 1A The figure is a cross-sectional schematic diagram of a specific embodiment of a projection laser processing system using a laser processing mask set according to the present invention.

[0037] Figure 1B for Figure 1A A schematic top view of an initial mask of a laser processing mask set according to an embodiment.

[0038] Figure 1C for Figure 1A Schematic top view of a first correction mask of a laser machining mask set according to an embodiment.

[0039] Figure 1D For simulation Figure 1A A schematic diagram of the irradiation profile of the laser beam projected onto a focal plane after the laser beam passes through a laser machining mask set and a projection lens according to an embodiment.

[0040] Figure 1E for Figure 1D Schematic diagram of the cross-section of the laser beam's irradiance profile along the radial direction.

[0041] Figure 1F For the present invention Figure 1E Schematic diagram of the radial cross-section of the laser beam irradiance profile and the prior art Figure 4D Schematic comparison of the laser beam irradiance profile along the radial cross-section.

[0042] Figure 1G For the present invention Figure 1E Schematic diagram of the radial cross-section of the laser beam irradiance profile and the prior art Figure 4D Schematic diagram of the normalized cross-sectional view of the laser beam irradiance profile along the radial direction.

[0043] Figure 2A FIG2 is a cross-sectional schematic diagram of another specific embodiment of a projection laser processing system using a laser processing mask set according to the present invention.

[0044] Figure 2B for Figure 2A A schematic top view of an initial mask of a laser processing mask set according to an embodiment.

[0045] Figure 2C for Figure 2A Schematic top view of a first correction mask of a laser machining mask set according to an embodiment.

[0046] Figure 2D For simulation Figure 2A A schematic diagram of the irradiance profile of the laser beam projected onto a focal plane after the laser beam passes through a laser processing mask set and a projection lens according to an embodiment.

[0047] Figure 2E for Figure 2D Schematic diagram of the cross-section of the laser beam irradiance profile along the X-axis.

[0048] Figure 2F for Figure 2D Schematic diagram of the cross-section of the laser beam irradiance profile along the Y-axis.

[0049] Figure 2G For the present invention Figure 2E Schematic diagram of the cross-section of the laser beam irradiance profile along the X-axis and the prior art Figure 5D Schematic comparison of the cross-sectional view of the laser beam irradiance profile along the X-axis.

[0050] Figure 2H For the present invention Figure 2F Schematic diagram of the cross-section of the laser beam irradiance profile along the Y axis and the prior art Figure 5E Schematic comparison of the cross-sectional view of the laser beam irradiance profile along the Y-axis.

[0051] Figure 2I For the present invention Figure 2E Schematic diagram of the cross-section of the laser beam irradiance profile along the X-axis and the prior art Figure 5D Schematic diagram of the cross-section of the laser beam irradiance profile along the X-axis after normalization.

[0052] Figure 2J For the present invention Figure 2F Schematic diagram of the cross-section of the laser beam irradiance profile along the Y axis and the prior art Figure 5E Schematic diagram of the cross-section of the laser beam irradiance profile along the Y-axis after normalization.

[0053] Figure 3A FIG. 4 is a cross-sectional schematic diagram of another specific embodiment of the laser processing mask set of the present invention.

[0054] Figure 3B FIG. 4 is a cross-sectional schematic diagram of another specific embodiment of the laser processing mask set of the present invention.

[0055] Figure 3C FIG. 4 is a cross-sectional schematic diagram of another specific embodiment of the laser processing mask set of the present invention.

[0056] Figure 3D FIG. 1 is a top view of an initial mask according to yet another embodiment of the laser processing mask set of the present invention.

[0057] Figure 3E FIG. 4 is a top view of a first calibration mask according to yet another embodiment of the laser processing mask set of the present invention.

[0058] Figure 3F FIG. 4 is a cross-sectional schematic diagram of another specific embodiment of the laser processing mask set of the present invention.

[0059] Figure 4A The figure is a cross-sectional schematic diagram of a specific embodiment of a projection laser processing system using a laser processing mask in the prior art.

[0060] Figure 4B For existing technology Figure 4A A schematic top view of a laser processing mask according to an embodiment.

[0061] Figure 4C To simulate existing technology Figure 4A A schematic diagram of the irradiation profile of the laser beam projected onto a focal plane after the laser beam passes through a laser machining mask and a projection lens according to an embodiment.

[0062] Figure 4D For existing technology Figure 4C Schematic diagram of the radial cross-section of the laser beam's irradiance profile.

[0063] Figure 5A The figure is a cross-sectional schematic diagram of another specific embodiment of a projection laser processing system using a laser processing mask in the prior art.

[0064] Figure 5B For existing technology Figure 5A A schematic top view of a laser processing mask according to an embodiment.

[0065] Figure 5C To simulate existing technology Figure 5A A schematic diagram of the radiant illumination profile of the laser beam of an embodiment after the laser beam passes through the laser processing mask and the projection lens and is projected onto a focal plane.

[0066] Figure 5D For existing technology Figure 5C Schematic diagram of the cross-section of the laser beam's irradiance profile along the X-axis.

[0067] Figure 5E For existing technology Figure 5C Schematic diagram of the cross-section of the laser beam's irradiance profile along the Y-axis.

[0068] The main components in the figure are marked as follows:

[0069] 1. Projection laser processing system using a laser processing mask set;

[0070] 10. Processing laser device; 11. Projection lens; 12. Processing workpiece; 13. Laser beam;

[0071] 2. Laser processing mask set;

[0072] 3. Initial mask;

[0073] 30. Initial non-mask region; 31. Initial mask region; 32. Initial mask base; 33. Initial light shielding layer; 34. First surface; 35. Second surface; 36. Through-region; 37. Initial mask base; 38. Non-through-region;

[0074] 4. First correction mask;

[0075] 40. First mapping region; 41. First mapping mask region; 42. First correction mask base;

[0076] 43. First correction light shielding layer; 44. Surface; 45. First mapping non-mask area; 46. Surrounding area; 47. Surrounding mask area; 48. Surrounding non-mask area;

[0077] 5. Second correction mask;

[0078] 9. Projection laser processing system using laser processing mask;

[0079] 90. Laser processing mask; 91. Processing laser device; 92. Projection lens; 93. Processing workpiece; 94. Laser beam; 95. Non-mask area; 96. Mask area; 97. Mask base;

[0080] 98, light shielding layer; 99, surface;

[0081] d. Shading spacing;

[0082] p, shading projection spacing;

[0083] R, axis;

[0084] X, axis;

[0085] Y,axis;

[0086] Z, axis. DETAILED DESCRIPTION

[0087] See Figure 1A , which is a cross-sectional schematic diagram of a specific embodiment of a projection laser processing system using a laser processing mask set of the present invention. Please also refer to Figure 1B as well as Figure 1C , which are Figure 1AA schematic top view of an initial mask and a schematic top view of a first correction mask of a laser processing mask set according to an embodiment. A projection laser processing system 1 using a laser processing mask set according to the present invention includes: a processing laser device 10, a laser processing mask set 2, and a projection lens 11. The laser processing mask set 2, the projection lens 11, and the workpiece 12 are sequentially arranged along the propagation direction of a laser beam 13 generated by the processing laser device 10, along the propagation path of the laser beam 13. In this embodiment, the laser processing mask set 2 includes an initial mask 3 and a first correction mask 4, wherein the first correction mask 4 is arranged between the initial mask 3 and the projection lens 11. The initial mask 3 is an amplitude-type mask. The initial mask 3 includes an initial mask base 32 and an initial light-shielding layer 33. An initial light-shielding layer 33 is formed on a first surface 34 of an initial mask substrate 32. The initial mask 3 includes an initial mask region 31 where the initial light-shielding layer 33 is formed (i.e., the initial light-shielding layer 33 of the initial mask 3 is formed within the initial mask region 31 of the initial mask 3) and an initial non-mask region 30 where the initial light-shielding layer 33 is not formed (i.e., the region outside the initial mask region 31). The initial non-mask region 30 is circular in shape. The first correction mask 4 includes a first mapping region 40, where the initial non-mask region 30 of the initial mask 3 is mapped onto the first correction mask 4 along the propagation path of the laser beam 13. The first mapping region 40 is circular in shape (the same as the initial non-mask region 30), and the circular area of ​​the first mapping region 40 is the same as the circular area of ​​the initial non-mask region 30. The first mapping region 40 is an amplitude-type mask. The first correction mask 4 includes a first correction mask base 42 and a first correction light-shielding layer 43. The first correction light-shielding layer 43 is formed on a surface 44 of the first correction mask base 42. The first mapping region 40 includes a first mapping mask region 41 and a first mapping non-mask region 45. The first correction light-shielding layer 43 is formed within the first mapping mask region 41 of the first mapping region 40. The first mapping non-mask region 45 is the region within the first mapping region 40 where the first correction light-shielding layer 43 is not formed (i.e., the region within the first mapping region 40 outside the first mapping mask region 41). The first mapping mask region 41 is annular in shape. The annular shape of the first mapping mask region 41 is symmetrical about the center of the circle of the first mapping region 40 (i.e., symmetrical about the origin where the X-axis = 0 and the Y-axis = 0), and the outer diameter of the annular shape of the first mapping mask region 41 is smaller than the diameter of the circle of the first mapping region 40.In this embodiment, the wavelength of the laser beam 13 generated by the processing laser device 10 is 248nm; the magnification of the projection lens 11 is 0.4 times; the circular diameter of the initial non-mask area 30 and the circular diameter of the first mapping area 40 are equal to 7.5μm; the outer diameter of the ring of the first mapping mask area 41 is equal to 6μm; the inner diameter of the ring of the first mapping mask area 41 is equal to 2μm; in the propagation direction of the laser beam 13, there is a shading distance d between the initial shading layer 33 and the first correction shading layer 43, and the shading distance d is equal to 0.5mm; there is a shading projection distance p between the first correction mask 4 and the projection lens 11, and the shading projection distance p is equal to 60mm.

[0088] The present invention Figure 1A Embodiments and prior art Figure 4A The only difference between the embodiments is that Figure 1A The embodiment has an additional first correction mask 4. Figure 1A The initial mask 3, the processing laser device 10 and the projection lens 11 of the embodiment are respectively different from those of the prior art. Figure 4A The laser processing mask 90, processing laser device 91 and projection lens 92 of the embodiment are the same, and other parameters are also the same. Figure 1D , which simulates the present invention Figure 1A Schematic diagram of the irradiance profile of the laser beam projected onto the focal plane after passing through the laser processing mask set and the projection lens in the embodiment. Please also refer to Figure 1E , which is Figure 1D The radiant illumination profile of the laser beam along the radial direction is shown in FIG. 1 (the R axis passes through the X axis = 0 and the Y axis = 0). After simulation, when the laser beam 13 passes through the laser processing mask set 2 (including the initial mask 3 and the first correction mask 4) and the projection lens 11, and is then projected onto the focal plane (for example, onto the workpiece 12), the radiant illumination profile of the laser beam is as follows: Figure 1D In the present invention Figure 1E The peak full width at half maximum (FWHM) of the laser beam irradiance profile along the radial section is 2.139 μm, which is significantly lower than that in the prior art. Figure 4D The peak full width at half maximum of the laser beam irradiance profile along the radial direction is 2.336 μm. Figure 1F , which is the present invention Figure 1E Schematic diagram of the radial cross-section of the laser beam irradiance profile and the prior art Figure 4D Comparison of the laser beam irradiance profile along the radial cross-sectional schematic diagram. Figure 1A Embodiments are better than prior art Figure 4A The embodiment has an additional first calibration mask 4. Therefore, when the laser beam 13 passes through the initial non-mask area 30 of the initial mask 3 of the laser processing mask set 2 and then passes through the first calibration mask 4, the radiation illumination of the laser beam 13 is bound to be weakened. Figure 1F In the present invention ( Figure 1E )'s laser beam irradiance is significantly lower than that of the prior art ( Figure 4D ) of the laser beam. Please also refer to Figure 1G , which is the present invention Figure 1E Schematic diagram of the radial cross-section of the laser beam irradiance profile and the prior art Figure 4D The radiant illumination profile of the laser beam along the radial direction is compared with the normalized cross-sectional schematic diagram. Figure 1E With existing technology Figure 4D Normalization) and then make comparisons, such as Figure 1G As shown, the present invention ( Figure 1E ) The verticality of the normalized laser beam irradiance profile along the radial section is significantly higher than that of the prior art ( Figure 4D ) The normalized irradiance profile of the laser beam is perpendicular to the radial section. Figure 1G In the embodiment of the present invention, on both sides outside the central spot of the laser, for example, in the region where the R axis is less than -2 μm or greater than 2 μm, Figure 1E ) The diffraction pattern of the normalized laser beam irradiance profile is significantly lower (less than) that of the prior art ( Figure 4D ) The diffraction pattern of the normalized irradiance profile of the laser beam. Figure 1A The first correction mask 4 of the embodiment can effectively control the size of the laser beam 13 projected on the focal plane (for example, projected on the workpiece 12) after the laser beam 13 passes through the laser processing mask set 2 (including the initial mask 3 and the first correction mask 4) and the projection lens 11; and compared with the prior art Figure 4A The embodiment uses only the laser processing mask 90 (equivalent to the present invention Figure 1A Initial mask 3 of the embodiment, the present invention Figure 1A The embodiment uses the laser processing mask set 2 (including the initial mask 3 and the first correction mask 4) to reduce or lower the diffraction pattern of the laser beam 13 when it is projected on the focal plane. Figure 1AThe first correction mask 4 of the embodiment is used to increase the verticality of the radiation illumination profile of the laser beam along the radial direction and reduce the peak half-maximum full width of the radiation illumination profile of the laser beam along the radial direction. When the projection laser processing system 1 using the laser processing mask set of the present invention is used to perform a laser drilling process on the processing workpiece 12, the verticality of the hole produced by the laser drilling is higher (compared to the prior art Figure 4A The projection laser processing system 9) using a laser processing mask of the embodiment can avoid forming a hole with a wide opening and a narrow bottom; in addition, it greatly reduces the possibility that the surface of the workpiece 12 around the opening of the laser-processed hole will be damaged by the diffraction pattern of the laser beam 13. Figure 1A The laser processing mask set 2 of the embodiment (including Figure 1B The initial mask 3 and Figure 1C The first correction mask 4) is suitable for use in, for example, a laser drilling process, especially a circularly symmetrical laser drilling process; in addition, due to the characteristics of circular symmetry, it is also suitable for use in, for example, a laser cutting process that cuts a groove along an arbitrary direction while processing; or it is suitable for use in a laser patterning process, such as a laser patterning process that changes direction while processing. Among them, the laser drilling process in this specification refers to a process for processing a hole with a depth less than the thickness of the workpiece 12 on the workpiece 12, or refers to a process for processing a through hole that penetrates the workpiece 12 on the workpiece 12. Among them, the laser cutting process in this specification refers to a process for cutting a groove with a depth less than the thickness of the workpiece 12 on the workpiece 12, or refers to a process for cutting a groove that penetrates the workpiece 12 on the workpiece 12.

[0089] In some embodiments, the circular diameter of the initial non-mask area 30 and the circular diameter of the first mapping area 40 are greater than or equal to 10 times the wavelength of the laser beam 13 and less than or equal to 91 times the wavelength of the laser beam 13. In some embodiments, in the propagation direction of the laser beam 13, the light-shielding distance d between the initial light-shielding layer 33 and the first correction light-shielding layer 43 is greater than or equal to 403 times the wavelength of the laser beam 13 and less than or equal to 24194 times the wavelength of the laser beam 13.

[0090] In some embodiments, the ratio of the inner diameter of the ring of the first mapping mask area 41 to the diameter of the circle of the initial non-mask area 30 and the diameter of the circle of the first mapping area 40 is between 2:15 and 2:5; the ratio of the outer diameter of the ring of the first mapping mask area 41 to the diameter of the circle of the initial non-mask area 30 and the diameter of the circle of the first mapping area 40 is between 2:3 and 14:15.

[0091] In some embodiments, the first correction mask 4 is an amplitude mask. In other embodiments, the first correction mask 4 is a phase mask.

[0092] In some embodiments, the initial mask 3 is disposed between the first correction mask 4 and the projection lens 11 .

[0093] In some embodiments, the initial mask 3 includes a plurality of initial non-mask areas 30, and the first correction mask 4 includes a plurality of first mapping areas 40, wherein each of the plurality of first mapping areas 40 corresponds to an area on the first correction mask 4 corresponding to the plurality of initial non-mask areas 30 of the initial mask 3 along the propagation path of the laser beam 13.

[0094] See Figure 2A , which is a cross-sectional schematic diagram of another specific embodiment of a projection laser processing system using a laser processing mask set of the present invention. Please also refer to Figure 2B as well as Figure 2C , which are Figure 2AA schematic top view of an initial mask and a schematic top view of a first correction mask of a laser processing mask set according to an embodiment. A projection laser processing system 1 using a laser processing mask set according to the present invention includes: a processing laser device 10, a laser processing mask set 2, and a projection lens 11. The laser processing mask set 2, the projection lens 11, and the workpiece 12 are sequentially arranged along the propagation direction of a laser beam 13 generated by the processing laser device 10. In this embodiment, the laser processing mask set 2 includes an initial mask 3 and a first correction mask 4, wherein the first correction mask 4 is arranged between the initial mask 3 and the projection lens 11. The initial mask 3 is an amplitude-type mask. The initial mask 3 includes an initial mask base 32 and an initial light-shielding layer 33. An initial light-shielding layer 33 is formed on a first surface 34 of an initial mask substrate 32. The initial mask 3 includes an initial mask region 31 where the initial light-shielding layer 33 is formed (i.e., the initial light-shielding layer 33 of the initial mask 3 is formed within the initial mask region 31 of the initial mask 3) and an initial non-mask region 30 where the initial light-shielding layer 33 is not formed (i.e., the area outside the initial mask region 31). The initial non-mask region 30 is rectangular in shape. The first calibration mask 4 includes a first mapping region 40 and a surrounding region 46. The first mapping region 40 is the region on the first calibration mask 4 mapped along the propagation path of the laser beam 13. The surrounding region 46 surrounds the first mapping region 40. The first mapping region 40 is rectangular in shape (the same as the initial non-mask region 30), and the area of ​​the rectangle is the same as that of the rectangle of the initial non-mask region 30. Both the first mapping region 40 and the surrounding region 46 are amplitude-type masks. The first mapping region 40 includes a first mapping mask region 41 and a first mapping non-mask region 45. The surrounding region 46 includes a surrounding mask region 47 and a surrounding non-mask region 48. The first mapping mask region 41 of the first mapping region 40 is connected to the surrounding mask region 47 of the surrounding region 46 to form a rectangle. Hereinafter, the rectangle of the first mapping region 40 is defined as a mapping rectangle; and the rectangle formed by connecting the first mapping mask region 41 of the first mapping region 40 and the surrounding mask region 47 of the surrounding region 46 is defined as a connecting rectangle. The first correction mask 4 includes a first correction mask substrate 42 and a first correction light-shielding layer 43. The first correction light-shielding layer 43 is formed on the surface 44 of the first correction mask substrate 42. The area on the surface 44 of the first correction mask substrate 42 where the first correction light-shielding layer 43 is formed includes the first mapping mask region 41 of the first mapping region 40 and the surrounding mask region 47 of the surrounding region 46 (i.e., the area of ​​the connecting rectangle). In the first mapping region 40 , the area on the surface 44 of the first correction mask substrate 42 where the first correction light shielding layer 43 is not formed is a first mapping non-mask area 45 (ie, the area outside the first mapping mask area 41 in the first mapping region 40 ).Within the peripheral region 46, the area on the surface 44 of the first correction mask substrate 42 where the first correction light-shielding layer 43 is not formed is a peripheral non-mask region 48 (i.e., the area outside the peripheral mask region 47 within the peripheral region 46). The geometric center of the mapping rectangle coincides with the geometric center of the connecting rectangle (both located at the origin where the X axis = 0 and the Y axis = 0), and the long side of the mapping rectangle is parallel to the long side of the connecting rectangle (the short side of the mapping rectangle is also parallel to the short side of the connecting rectangle). The long side of the mapping rectangle is smaller than the long side of the connecting rectangle, and the short side of the mapping rectangle is larger than the short side of the connecting rectangle. In this embodiment, the wavelength of the laser beam 13 generated by the processing laser device 10 is 248 nm; the magnification of the projection lens 11 is 0.4 times; the long side of the rectangle of the initial non-mask area 30 and the mapping rectangle (the rectangle of the first mapping area 40) is 7.5 μm; the short side of the rectangle of the initial non-mask area 30 and the mapping rectangle (the rectangle of the first mapping area 40) is 6 μm; the long side of the connecting rectangle (the rectangle formed by connecting the first mapping mask area 41 and the surrounding mask area 47) is 20 μm; the short side of the connecting rectangle (the rectangle formed by connecting the first mapping mask area 41 and the surrounding mask area 47) is 4 μm; in the propagation direction of the laser beam 13, there is a shielding distance d between the initial light shielding layer 33 and the first correction light shielding layer 43, and the shielding distance d is equal to 0.5 mm; there is a shielding projection distance p between the first correction mask 4 and the projection lens 11, and the shielding projection distance p is equal to 60 mm.

[0095] The present invention Figure 2A Embodiments and prior art Figure 5A The only difference between the embodiments is that Figure 2A The embodiment has an additional first correction mask 4. Figure 2A The initial mask 3, the processing laser device 10 and the projection lens 11 of the embodiment are respectively different from those of the prior art. Figure 5A The laser processing mask 90, processing laser device 91 and projection lens 92 of the embodiment are the same, and other parameters are also the same. Figure 2D , which is a simulation Figure 2A Schematic diagram of the irradiance profile of the laser beam projected onto the focal plane after passing through the laser processing mask set and the projection lens of the embodiment. Please also refer to Figure 2E as well as Figure 2F , which are Figure 2D Schematic diagram of the cross-section of the laser beam irradiance profile along the X-axis and Figure 2D The cross-sectional diagram of the laser beam irradiance profile along the Y axis is shown in FIG. After simulation, when the laser beam 13 passes through the laser processing mask set 2 (including the initial mask 3 and the first correction mask 4) and the projection lens 11, and is then projected onto the focal plane (for example, onto the workpiece 12), the irradiance profile of the laser beam is as follows: Figure 2D In the present invention Figure 2E The peak half-maximum full width of the laser beam irradiance profile along the X-axis is 2.018 μm, which is significantly lower than that in the prior art. Figure 5D The peak half-maximum full width of the laser beam irradiance profile along the X-axis is 2.293 μm; Figure 2F The peak half-maximum full width of the laser beam irradiance profile along the Y-axis is 2.332 μm, which is only slightly lower than that in the existing technology. Figure 5E The peak full width at half maximum of the laser beam irradiance profile along the Y axis is 2.349 μm. Figure 2G , which is the present invention Figure 2E Schematic diagram of the cross-section of the laser beam's irradiance profile along the X-axis and the prior art Figure 5D Comparison of the cross-sectional diagram of the laser beam irradiance profile along the X-axis. Please also refer to Figure 2H , the present invention Figure 2F Schematic diagram of the cross-section of the laser beam irradiance profile along the Y axis and the prior art Figure 5E Comparison of the cross-sectional schematic diagram of the irradiance profile of the laser beam along the Y axis. Figure 2A Embodiments are better than prior art Figure 5A The embodiment has an additional first calibration mask 4. Therefore, when the laser beam 13 passes through the initial non-mask area 30 of the initial mask 3 of the laser processing mask set 2 and then passes through the first calibration mask 4, the radiation illumination of the laser beam 13 is bound to be weakened. Figure 2G as well as Figure 2H In the present invention ( Figure 2E and Figure 2F )'s laser beam irradiance is significantly lower than that of the prior art ( Figure 5D and Figure 5E ) of the laser beam. Please also refer to Figure 2I , which is the present invention Figure 2E Schematic diagram of the cross-section of the laser beam irradiance profile along the X-axis and the prior art Figure 5D The cross-sectional diagram of the laser beam irradiance profile along the X-axis is normalized. Please also refer to Figure 2J , the present invention Figure 2F Schematic diagram of the cross-section of the laser beam irradiance profile along the Y axis and the prior art Figure 5E The irradiance profile of the laser beam along the Y axis is compared with the normalized cross-sectional schematic diagram. Figure 2E With existing technology Figure 5D Normalization and the present invention Figure 2F With existing technology Figure 5E Normalization) and then make comparisons, such as Figure 2I as well as Figure 2J As shown. Figure 2I In the present invention ( Figure 2E ) The verticality of the normalized laser beam irradiance profile along the X-axis is significantly higher than that of the prior art ( Figure 5D ) The verticality of the cross section of the normalized laser beam irradiance profile along the X-axis. Figure 2I In the present invention, on both sides of the cross section of the laser beam irradiance profile along the X axis, for example, in the region less than -2 μm or greater than 2 μm on the X axis, Figure 2E ) The diffraction pattern of the normalized laser beam irradiance profile along the X-axis is significantly lower (less than) that of the prior art ( Figure 5D ) The diffraction pattern of the normalized laser beam irradiance profile along the X-axis section. Figure 2J In the present invention ( Figure 2F ) The verticality of the normalized laser beam irradiance profile along the Y-axis is only slightly higher than that of the prior art ( Figure 5E ) The verticality of the cross section of the normalized laser beam irradiance profile along the Y axis (the present invention Figure 2F The peak half-maximum full width of the laser beam along the Y-axis is 2.332 μm, which is slightly lower than that of the conventional technology. Figure 5E The peak half-maximum full width of the laser beam radiation illuminance profile along the Y axis section is 2.349 μm), and on both sides of the laser beam radiation illuminance profile along the Y axis section, the present invention ( Figure 2F ) The diffraction pattern of the normalized laser beam irradiance profile along the Y-axis is similar to that of the prior art ( Figure 5E ) The diffraction pattern of the laser beam's irradiance profile along the Y-axis after normalization. Figure 2A The first correction mask 4 of the embodiment can effectively control the size of the laser beam 13 along the X-axis direction after the laser beam 13 passes through the laser processing mask set 2 (including the initial mask 3 and the first correction mask 4) and the projection lens 11, and is projected on a focusing plane. Compared with the prior art 5A embodiment which only uses the laser processing mask 90 (equivalent to the embodiment of the present invention), Figure 2A Initial mask 3 of the embodiment, the present invention Figure 2A The embodiment uses the laser processing mask set 2 (including the initial mask 3 and the first correction mask 4) to effectively reduce or lower the diffraction pattern of the laser beam 13 projected on the focus plane along the X-axis (that is, it can effectively control the size of the laser beam 13 projected on the focus plane along the X-axis). In addition, it can also effectively reduce or lower the diffraction pattern of the laser beam 13 projected on the focus plane along the X-axis. Figure 2AThe first correction mask 4 of the embodiment increases the verticality of the radiation illumination profile of the laser beam along the X-axis and reduces the peak half-maximum full width of the radiation illumination profile of the laser beam along the X-axis. Figure 2A After the first correction mask 4 of the embodiment controls the laser beam 13 to pass through the laser processing mask set 2 (including the initial mask 3 and the first correction mask 4) and the projection lens 11, the size of the laser beam 13 projected on the focal plane along the Y-axis is relatively limited; and the present invention Figure 2A The embodiment uses a laser processing mask set 2 (including an initial mask 3 and a first correction mask 4), which is relatively limited in reducing or lowering the diffraction pattern of the laser beam 13 projected on the focal plane along the Y-axis direction (that is, it cannot effectively control the size of the laser beam 13 projected on the focal plane along the Y-axis direction). In addition, it is also relatively limited in increasing the verticality of the radiation illuminance profile of the laser beam along the Y-axis direction and reducing the peak half-maximum full width of the radiation illuminance profile of the laser beam along the Y-axis. Therefore, when the projection laser processing system 1 using the laser processing mask set of the present invention is used to perform a laser cutting groove processing process on the workpiece 12, when the laser beam 13 is moving along the Y-axis while processing and cutting out a long groove along the Y-axis, the verticality of the cross-section of the long groove processed by the laser cutting groove along the X-axis is higher (compared to the prior art Figure 5A The projection laser processing system 9) using a laser processing mask of the embodiment can avoid forming a long groove with a wide opening and a narrow bottom along the X-axis cross section; in addition, the possibility of the surface of the workpiece 12 being damaged by the diffraction pattern of the laser beam 13 around the opening of the cross section along the X-axis of the laser-processed long groove is greatly reduced. Therefore, the present invention Figure 2A In the embodiment, the laser processing mask set 2 (including Figure 2B The initial mask 3 and Figure 2C The first correction mask 4) is suitable for use in a laser cutting process, for example, in which the laser moves along the Y axis while cutting to form long grooves along the Y axis.

[0096] In some embodiments, the long sides of the rectangle of the initial non-mask area 30 and the mapped rectangle are greater than or equal to 10 times the wavelength of the laser beam 13 and less than or equal to 91 times the wavelength of the laser beam 13, and the short sides of the rectangle of the initial non-mask area 30 and the mapped rectangle are greater than or equal to 8 times the wavelength of the laser beam 13 and less than or equal to 73 times the wavelength of the laser beam 13. In some embodiments, along the propagation direction of the laser beam 13, the light-shielding distance d between the initial light-shielding layer 33 and the first correction light-shielding layer 43 is greater than or equal to 403 times the wavelength of the laser beam 13 and less than or equal to 24194 times the wavelength of the laser beam 13.

[0097] In some embodiments, the ratio of the long side of the rectangle of the initial non-mask area 30 and the mapped rectangle to the long side of the connecting rectangle is between 5:12 and 15:44, and the ratio of the short side of the rectangle of the initial non-mask area 30 and the mapped rectangle to the short side of the connecting rectangle is between 2:1 and 6:5.

[0098] In some embodiments, the initial mask 3 is an amplitude mask, and the first correction mask 4 is an amplitude mask. In other embodiments, the initial mask 3 is an amplitude mask, and the first correction mask 4 is a phase mask. In still other embodiments, the initial mask 3 is an amplitude mask, and the first mapping region 40 and the surrounding region 46 are both phase masks.

[0099] In some embodiments, the initial mask 3 is disposed between the first correction mask 4 and the projection lens 11 .

[0100] In some embodiments, the initial mask 3 includes a plurality of initial non-mask regions 30, and the first correction mask 4 includes a plurality of first mapping regions 40, wherein each of the plurality of first mapping regions 40 corresponds to a region on the first correction mask 4 along the propagation path of the laser beam 13. In other embodiments, the initial mask 3 includes a plurality of initial non-mask regions 30, and the first correction mask 4 includes a plurality of first mapping regions 40 and a plurality of surrounding regions 46, wherein each of the plurality of first mapping regions 40 corresponds to a region on the first correction mask 4 along the propagation path of the laser beam 13, wherein the plurality of first mapping regions 40 respectively correspond to a plurality of surrounding regions 46 (each surrounding region 46 surrounds a corresponding first mapping region 40). In some other embodiments, the initial mask 3 includes a plurality of initial non-mask areas 30, and the first correction mask 4 includes a plurality of first mapping areas 40 and a plurality of surrounding areas 46, wherein each of the plurality of first mapping areas 40 corresponds to an area on the first correction mask 4 along the propagation path of the laser beam 13 corresponding to the plurality of initial non-mask areas 30 of the initial mask 3, wherein at least a portion of the plurality of first mapping areas 40 respectively corresponds to the plurality of surrounding areas 46 (for example, there are 4 surrounding areas 46, there are 10 first mapping areas 40, and 4 of the first mapping areas 40 respectively correspond to the 4 surrounding areas 46, wherein each surrounding area 46 surrounds the corresponding first mapping area 40).

[0101] See Figure 3A, which is a cross-sectional schematic diagram of another specific embodiment of the laser processing mask set of the present invention. In this embodiment, the laser processing mask set 2 includes an initial mask 3 and a first correction mask 4. The initial mask 3 is an amplitude-type mask. The initial mask 3 includes an initial mask base 32 and an initial light-shielding layer 33. The initial light-shielding layer 33 is formed on the first surface 34 of the initial mask base 32; the initial mask 3 includes an initial mask region 31 where the initial light-shielding layer 33 is formed (i.e., the initial light-shielding layer 33 of the initial mask 3 is formed within the initial mask region 31 of the initial mask 3) and an initial non-mask region 30 where the initial light-shielding layer 33 is not formed (i.e., the region outside the initial mask region 31). The initial non-mask region 30 is circular in shape. The first correction mask 4 includes a first mapping region 40, wherein the first mapping region 40 maps the initial non-mask region 30 of the initial mask 3 to a region on the first correction mask 4 along the propagation path of the laser beam 13. The first mapping region 40 is circular in shape (the same as the initial non-masked region 30), and its circular area is the same as that of the initial non-masked region 30. The first mapping region 40 is an amplitude-type mask. The first correction mask 4 includes a first correction light-shielding layer 43. The first correction light-shielding layer 43 of the first correction mask 4 is formed on the second surface 35 of the initial mask substrate 32 of the initial mask 3 (the second surface 35 is opposite to the first surface 34 of the initial mask substrate 32 along the propagation path of the laser beam 13), so that the first correction mask 4 is positioned between the initial mask 3 and the projection lens 11. The first mapping region 40 includes a first mapping mask region 41 and a first mapping non-masked region 45. In this embodiment, the first correction light-shielding layer 43 is the first mapping mask region 41 of the first mapping region 40. The first mapping non-masked region 45 is the region within the first mapping region 40 where the first correction light-shielding layer 43 is not formed (i.e., the region outside the first mapping mask region 41 within the first mapping region 40). The first mapping mask region 41 is annular. The annular shape of the first mapping mask region 41 is symmetrical about the center of the circular shape of the first mapping region 40 (i.e., about the origin where the X-axis = 0 and the Y-axis = 0), and the outer diameter of the annular shape of the first mapping mask region 41 is smaller than the diameter of the circular shape of the first mapping region 40. Along the propagation direction of the laser beam 13, a light-shielding distance d is defined between the initial light-shielding layer 33 and the first correction light-shielding layer 43. The light-shielding distance d is equal to the thickness of the initial mask substrate 32. The light-shielding distance d can be controlled by adjusting the thickness of the initial mask substrate 32.

[0102] See Figure 3B , which is a cross-sectional schematic diagram of another specific embodiment of the laser processing mask set of the present invention. Figure 3B The main structure of the laser processing mask set 2 (including the initial mask 3 and the first correction mask 4) of the embodiment is the same as Figure 1A 、 Figure 1B and Figure 1C The structure of the laser processing mask group 2 of the embodiment is roughly the same, except that the initial mask base 32 of the initial mask 3 has a penetration area 36, ​​and the penetration area 36 penetrates the initial mask base 32 along the propagation direction of the laser beam 13, wherein the penetration area 36 of the initial mask base 32 of the initial mask 3 is the initial non-mask area 30 of the initial mask 3.

[0103] In some embodiments, the initial mask base 32 of the initial mask 3 has a plurality of through-regions 36 , wherein each of the plurality of through-regions 36 penetrates the initial mask base 32 along the propagation direction of the laser beam 13 , and each of the plurality of through-regions 36 is an initial non-mask region 30 of the initial mask 3 .

[0104] See Figure 3C , which is a cross-sectional schematic diagram of another specific embodiment of the laser processing mask set of the present invention. In this embodiment, the laser processing mask set 2 includes an initial mask 3 and a first correction mask 4, wherein the first correction mask 4 is disposed between the initial mask 3 and the projection lens 11. Figure 3C The structure of the first correction mask 4 of the embodiment is Figure 1A and Figure 1C The structure of the first correction mask 4 of the embodiment is identical. The initial mask 3 is an amplitude-type mask. The initial mask 3 includes an initial mask mask base 37. The initial mask mask base 37 includes a penetration region 36 and a non-penetration region 38. The penetration region 36 penetrates the initial mask mask base 37 along the propagation direction of the laser beam 13. The penetration region 36 of the initial mask mask base 37 of the initial mask 3 constitutes the initial non-mask region 30 of the initial mask 3. The non-penetration region 38 of the initial mask mask base 37 of the initial mask 3 constitutes the initial mask region 31 of the initial mask 3. The initial non-mask region 30 (penetration region 36) is circular in shape and has the same circular shape and area as the first mapping region 40. In some embodiments, the circular diameters of the initial non-mask region 30 (penetration region 36) and the first mapping region 40 are greater than or equal to 2.5 μm and less than or equal to 22.5 μm. In some embodiments, along the propagation direction of the laser beam 13, there is a shading distance d between the initial mask area 31 (non-penetrating area 38) and the first correction shading layer 43, and the shading distance d is greater than or equal to 0.1 mm and less than or equal to 6 mm.

[0105] In some embodiments, the initial mask mask base 37 of the initial mask 3 has a plurality of through-regions 36 and non-through-regions 38, wherein each of the plurality of through-regions 36 penetrates the initial mask mask base 37 along the propagation direction of the laser beam 13, and each of the plurality of through-regions 36 is an initial non-mask region 30 of the initial mask 3. The non-through-region 38 of the initial mask mask base 37 of the initial mask 3 is the initial mask region 31 of the initial mask 3.

[0106] Please also see Figure 3D as well as Figure 3E , which are top views of an initial mask and a first correction mask, respectively, according to yet another specific embodiment of a laser processing mask set of the present invention. In this embodiment, the laser processing mask set 2 includes an initial mask 3 and a first correction mask 4. The initial mask 3 includes an initial mask area 31 and five initial non-mask areas 30, each of which is circular in shape. The first correction mask 4 includes five first mapping areas 40, each of which is a region on the first correction mask 4 mapped along the propagation path of the laser beam 13 to a corresponding initial non-mask area 30 of the initial mask 3. Each first mapping area 40 is circular in shape (the same as the corresponding initial non-mask area 30), and the circular area of ​​each first mapping area 40 is the same as the circular area of ​​the corresponding initial non-mask area 30. The first mapping areas 40 are amplitude-type masks. Each first mapping area 40 includes a first mapping mask area 41 and a first mapping non-mask area 45. The first mapping mask area 41 is annular in shape. The ring shape of the first mapping mask region 41 is symmetrical to the center of the circle of the first mapping region 40 (i.e., symmetrical to the origin of X axis=0 and Y axis=0), and the outer diameter of the ring shape of the first mapping mask region 41 is smaller than the diameter of the circle of the first mapping region 40.

[0107] In some embodiments, the initial mask 3 includes a plurality of initial non-mask areas 30, and the first correction mask 4 includes a plurality of first mapping areas 40, wherein each first mapping area 40 maps a corresponding initial non-mask area 30 of the initial mask 3 to an area on the first correction mask 4 along the propagation path of the laser beam 13. Each first mapping area 40 has the same shape and area as the corresponding initial non-mask area 30. The plurality of initial non-mask areas 30 (corresponding first mapping areas 40) can be circular, rectangular, or other shapes. The shape and size of the plurality of initial non-mask areas 30 (corresponding first mapping areas 40) can be the same, partially the same, or different. The plurality of initial non-mask areas 30 (corresponding first mapping areas 40) can be arranged in columns, rows, rows and columns, randomly, or a combination of the foregoing arrangements.

[0108] See Figure 3F , which is a cross-sectional schematic diagram of another specific embodiment of the laser processing mask set of the present invention. In this embodiment, the laser processing mask set 2 of the present invention includes an initial mask 3, a first correction mask 4, and a second correction mask 5. The first correction mask 4 is disposed between the initial mask 3 and the second correction mask 5, and the second correction mask 5 is disposed between the first correction mask 4 and the projection lens 11. The initial mask 3 is an amplitude mask, comprising an initial mask region and one or more initial non-masked regions. The first correction mask 4 includes one or more first mapping regions, wherein the one or more first mapping regions of the first correction mask 4 are regions mapped onto the first correction mask 4 along the propagation path of the laser beam 13 from the one or more initial non-masked regions of the initial mask 3. Each of the one or more first mapping regions has a shape and area identical to the shape and area of ​​the corresponding one or more initial non-masked regions. Any of the one or more first mapping regions of the first correction mask 4 is an amplitude mask or a phase mask. The second correction mask 5 is an amplitude mask or a phase mask. The first correction mask 4 and the second correction mask 5 are used to effectively control the size of the laser beam 13 projected on a focal plane after the laser beam 13 passes through the laser processing mask set 2 (including the initial mask 3, the first correction mask 4 and the second correction mask 5) and the projection lens 11, and reduce or lower the diffraction pattern of the laser beam 13 projected on the focal plane.

[0109] In some embodiments, the second correction mask 5 includes one or more second mapping areas, wherein the one or more second mapping areas of the second correction mask 5 are areas on the second correction mask 5 mapped from one or more initial non-mask areas of the initial mask 3 along the propagation path of the laser beam 13, wherein each of the one or more second mapping areas has a shape and an area that are respectively identical to the shape and area of ​​the corresponding one or more initial non-mask areas, wherein any one of the one or more second mapping areas of the second correction mask 5 is an amplitude mask or a phase mask.

[0110] In some embodiments, any of the one or more second mapping regions of the second correction mask 5 is an amplitude mask, wherein each of the one or more second mapping regions includes a second mapped mask region and a second mapped non-mask region.

[0111] In some embodiments, the first correction mask 4 is disposed between the initial mask 3 and the second correction mask 5, and the initial mask 3 is disposed between the first correction mask 4 and the projection lens 11. In other embodiments, the initial mask 3 is disposed between the first correction mask 4 and the second correction mask 5, and the second correction mask 5 is disposed between the initial mask 3 and the projection lens 11. In still other embodiments, the initial mask 3 is disposed between the first correction mask 4 and the second correction mask 5, and the first correction mask 4 is disposed between the initial mask 3 and the projection lens 11. In still other embodiments, the second correction mask 5 is disposed between the initial mask 3 and the first correction mask 4, and the first correction mask 4 is disposed between the second correction mask 5 and the projection lens 11. In still other embodiments, the second correction mask 5 is disposed between the initial mask 3 and the first correction mask 4, and the initial mask 3 is disposed between the second correction mask 5 and the projection lens 11.

[0112] In some embodiments, the initial mask 3 is an amplitude mask, the first correction mask 4 is an amplitude mask, and the second correction mask 5 is an amplitude mask. In other embodiments, the initial mask 3 is an amplitude mask, the first correction mask 4 is a phase mask, and the second correction mask 5 is an amplitude mask. In still other embodiments, the initial mask 3 is an amplitude mask, the first correction mask 4 is an amplitude mask, and the second correction mask 5 is a phase mask. In still other embodiments, the initial mask 3 is an amplitude mask, the first correction mask 4 is a phase mask, and the second correction mask 5 is a phase mask.

[0113] In some embodiments, the laser processing mask set 2 includes a plurality of initial masks 3 and a first calibration mask 4, wherein the arrangement of the plurality of initial masks 3 and the first calibration mask 4 can be adjusted in order according to the design of the plurality of initial masks 3 and the first calibration mask 4. In other embodiments, the laser processing mask set 2 includes a plurality of initial masks 3 and a plurality of first calibration masks 4, wherein the arrangement of the plurality of initial masks 3 and the plurality of first calibration masks 4 can be adjusted in order according to the design of the plurality of initial masks 3 and the plurality of first calibration masks 4. In still other embodiments, the laser processing mask set 2 includes an initial mask 3 and a plurality of first calibration masks 4, wherein the arrangement of the initial mask 3 and the plurality of first calibration masks 4 can be adjusted in order according to the design of the initial mask 3 and the plurality of first calibration masks 4.

[0114] The present invention further provides a projection laser processing method using a laser processing mask set, comprising the following steps: providing a processing laser device 10, a laser processing mask set 2, and a projection lens 11, such that the laser processing mask set 2, the projection lens 11, and a workpiece 12 are sequentially arranged along the propagation direction of a laser beam 13 generated by the processing laser device 10 on a propagation path of the laser beam 13, wherein the laser processing mask set 2 includes an initial mask 3 and a first calibration mask 4, wherein the initial mask 3 is an amplitude mask, and the first calibration mask 4 is arranged between the initial mask 3 and the projection lens 11, or between the initial mask 3 and the first calibration mask 4 and the projection lens 11; and performing a laser processing process on the workpiece 12; wherein the first calibration mask 4 is used to effectively control the size of the laser beam 13 projected on a focal plane after passing through the laser processing mask set 2 (including the initial mask 3 and the first calibration mask 4) and the projection lens 11, and to reduce or minimize the diffraction pattern of the laser beam 13 when projected on the focal plane. The laser processing process is a laser drilling process, a laser cutting process, a laser polishing process, a laser patterning process, or any combination thereof. The laser drilling process in this specification refers to a process for processing a hole having a depth less than the thickness of the workpiece 12 on the workpiece 12, or a process for processing a through hole penetrating the workpiece 12 on the workpiece 12. The laser cutting process in this specification refers to a process for cutting a groove having a depth less than the thickness of the workpiece 12 on the workpiece 12, or a process for cutting a groove penetrating the workpiece 12 on the workpiece 12.

[0115] In some embodiments, the laser processing mask set 2 of the projection laser processing method using a laser processing mask set of the present invention further includes a second calibration mask 5. The initial mask 3 is disposed between the first calibration mask 4 and the second calibration mask 5, or the first calibration mask 4 is disposed between the initial mask 3 and the second calibration mask 5. The second calibration mask 5 is an amplitude mask or a phase mask. The first calibration mask 4 and the second calibration mask 5 are used to effectively control the size of the laser beam 13 projected onto the focal plane after the laser beam 13 passes through the laser processing mask set 2 (including the initial mask 3, the first calibration mask 4, and the second calibration mask 5) and the projection lens 11, and to reduce or minimize the diffraction pattern of the laser beam 13 when projected onto the focal plane.

[0116] In some embodiments, the laser processing mask set 2 used in the projection laser processing method using a laser processing mask set of the present invention may be any of the aforementioned laser processing mask sets 2 .

[0117] In some embodiments, the processing laser device 10 of the projection laser processing system 1 using the laser processing mask set of the present invention can be an excimer laser, a solid-state laser or a fiber laser; wherein the wavelength of the excimer laser can be 248nm or 193nm; wherein the wavelength of the solid-state laser can be 1064nm, 532nm, 355nm or 263nm; wherein the wavelength of the fiber laser can be 1030nm, 515nm, 343nm or 258nm.

[0118] The above description is a specific embodiment of the present invention and the technical means used therein. Based on the disclosure or teachings of this article, many changes and modifications can be derived and deduced, which can still be regarded as equivalent changes made to the concept of the present invention. The effects produced still do not exceed the essential spirit covered by the description and drawings, and should be regarded as within the technical scope of the present invention. It is hereby stated in advance.

[0119] In summary, based on the contents disclosed above, the present invention can indeed achieve the intended purpose of the invention, providing a laser processing mask set for projection laser processing and a projection laser processing method using the laser processing mask set, which are of great industrial value, and an invention patent application is filed in accordance with the law.

Claims

1. A laser processing mask set for projection laser processing, characterized in that: The laser processing mask set and the projection lens are sequentially arranged on a propagation path of the laser beam along a propagation direction of the laser beam generated by the processing laser device, wherein the laser processing mask set includes: An initial mask, wherein the initial mask is an amplitude mask, and the initial mask comprises: an initial mask area; and one or more initial non-masked regions; and a first correction mask, wherein the first correction mask is disposed between the initial mask and the projection lens or the initial mask is disposed between the first correction mask and the projection lens, the first correction mask comprising: One or more first mapping areas, wherein the one or more first mapping areas of the first correction mask are areas on the first correction mask mapped from the one or more initial non-mask areas of the initial mask along the propagation path of the laser beam, each of the one or more first mapping areas has a shape and an area that are respectively identical to the shape and area of ​​the corresponding one or more initial non-mask areas, and any one of the one or more first mapping areas is an amplitude mask or a phase mask, wherein the first correction mask is used to effectively control the size of the laser beam projected on a focal plane after passing through the laser processing mask set and the projection lens.

2. The laser processing mask set for projection laser processing according to claim 1, wherein: At least one of the one or more first mapping regions is an amplitude mask, and each of the one or more first mapping regions of the amplitude mask comprises: a first mapped mask region; and The first maps the non-masked area.

3. The laser processing mask set for projection laser processing according to claim 2, wherein: At least one of the one or more first mapping regions of the amplitude mask is circular.

4. The laser processing mask set for projection laser processing according to claim 2, wherein: The first correction mask is arranged between the initial mask and the projection lens, and at least one of the one or more first mapping areas of the amplitude mask and its first mapping mask area are respectively circular and annular, and the annular shape is symmetrical to the center of the circle.

5. The laser processing mask set for projection laser processing according to claim 4, wherein: The outer diameter of the ring shape is smaller than the diameter of the circle.

6. The laser processing mask set for projection laser processing according to claim 5, characterized in that: The ratio of the inner diameter of the ring to the diameter of the circle is between 2:15 and 2:5, and the ratio of the outer diameter of the ring to the diameter of the circle is between 2:3 and 14:

15.

7. The laser processing mask set for projection laser processing according to claim 4, characterized in that: The diameter of the circle is greater than or equal to 10 times the wavelength of the laser beam and less than or equal to 91 times the wavelength of the laser beam.

8. The laser processing mask set for projection laser processing according to claim 7, wherein: Wherein, along the propagation direction of the laser beam, there is a spacing between the initial mask area and the first mapping mask area, and the spacing is greater than or equal to 403 times the wavelength of the laser beam and less than or equal to 24194 times the wavelength of the laser beam.

9. The laser processing mask set for projection laser processing according to claim 1, wherein: The first correction mask further includes one or more peripheral regions, each of the one or more peripheral regions surrounding a corresponding one of the one or more first mapping regions.

10. The laser processing mask set for projection laser processing according to claim 9, wherein: Any one of the one or more surrounding areas and the corresponding one of the one or more first mapping areas are both amplitude masks or both phase masks.

11. The laser processing mask set for projection laser processing according to claim 9, wherein: At least one of the one or more surrounding regions and the corresponding one or more first mapping regions are amplitude masks, and each of the one or more surrounding regions of the amplitude mask comprises: surrounding mask area; and surrounding non-mask area; wherein each of the one or more first mapping regions of the amplitude mask comprises: a first mapped mask region; and The first maps the non-masked area.

12. The laser processing mask set for projection laser processing according to claim 11, wherein: At least one of the one or more first mapping areas of the amplitude mask is a mapping rectangle.

13. The laser processing mask set for projection laser processing according to claim 11, wherein: The surrounding mask region of at least one of the one or more surrounding regions of the amplitude mask is connected to the first mapping mask region of the corresponding one or more first mapping regions of the amplitude mask.

14. The laser processing mask set for projection laser processing according to claim 13, wherein: The first correction mask is arranged between the initial mask and the projection lens, and the surrounding mask area of ​​at least one of the one or more surrounding areas of the amplitude mask is connected to the first mapping mask area of ​​the corresponding one or more first mapping areas of the amplitude mask to form a connecting rectangle.

15. The laser processing mask set for projection laser processing according to claim 11, wherein: The first correction mask is arranged between the initial mask and the projection lens, one of the one or more first mapping areas of the amplitude mask is in the form of a mapping rectangle, the first mapping mask area of ​​one of the one or more first mapping areas of the amplitude mask is connected to the surrounding mask area of ​​the one or more surrounding areas of the corresponding amplitude mask to form a connecting rectangle, the geometric center of the mapping rectangle coincides with the geometric center of the connecting rectangle, and the long side of the mapping rectangle is parallel to the long side of the connecting rectangle.

16. The laser processing mask set for projection laser processing according to claim 15, characterized in that: The long side of the mapping rectangle is smaller than the long side of the connection rectangle, and the short side of the mapping rectangle is larger than the short side of the connection rectangle.

17. The laser processing mask set for projection laser processing according to claim 16, wherein: The ratio of the long side of the mapping rectangle to the long side of the connection rectangle is between 5:12 and 15:44, and the ratio of the short side of the mapping rectangle to the short side of the connection rectangle is between 2:1 and 6:

5.

18. The laser processing mask set for projection laser processing according to claim 15, wherein: The long side of the mapping rectangle is greater than or equal to 10 times the wavelength of the laser beam and less than or equal to 91 times the wavelength of the laser beam, and the short side of the mapping rectangle is greater than or equal to 8 times the wavelength of the laser beam and less than or equal to 73 times the wavelength of the laser beam.

19. The laser processing mask set for projection laser processing according to claim 18, wherein: Wherein, along the propagation direction of the laser beam, there is a spacing between the initial mask area and the first mapping mask area, and the spacing is greater than or equal to 403 times the wavelength of the laser beam and less than or equal to 24194 times the wavelength of the laser beam.

20. The laser processing mask set for projection laser processing according to any one of claims 1 to 19, characterized in that: It further includes a second correction mask, wherein the initial mask is arranged between the first correction mask and the second correction mask or the first correction mask is arranged between the initial mask and the second correction mask, and the second correction mask is an amplitude mask or a phase mask, wherein the first correction mask and the second correction mask are used to effectively control the size of the laser beam projected on the focal plane after passing through the laser processing mask set and the projection lens.

21. The laser processing mask set for projection laser processing according to claim 20, wherein: The second correction mask includes: One or more second mapping areas, wherein the one or more second mapping areas of the second correction mask and the one or more initial non-mask areas of the initial mask are mapped to areas on the second correction mask along the propagation path of the laser beam, each of the one or more second mapping areas has a shape and an area that are respectively identical to the shape and area of ​​the corresponding one of the one or more initial non-mask areas, and any one of the one or more second mapping areas is an amplitude mask or a phase mask.

22. The laser processing mask set for projection laser processing according to claim 21, wherein: wherein at least one of the one or more second mapping regions is an amplitude mask, and each of the one or more second mapping regions of the amplitude mask comprises: a second mapped mask region; and The second maps the non-mask area.

23. The laser processing mask set for projection laser processing according to any one of claims 2 to 8 and 11 to 19, characterized in that: The initial mask comprises: an initial mask substrate; and A preliminary light-shielding layer is formed on the first surface of the preliminary mask base in the preliminary mask region of the preliminary mask.

24. The laser processing mask set for projection laser processing according to claim 23, wherein: The initial mask substrate has a second surface, the second surface is opposite to the first surface of the initial mask substrate along the propagation path of the laser beam, and the first correction mask includes: A first correction light-shielding layer is formed on the second surface of the initial mask substrate, and the first correction light-shielding layer is the first mapping mask region of the one or more first mapping regions of the first correction mask.

25. The laser processing mask set for projection laser processing according to claim 23, wherein: The initial mask base of the initial mask includes one or more penetrating regions, and the one or more penetrating regions penetrate the initial mask base along the propagation direction of the laser beam, and the one or more penetrating regions are the one or more initial non-mask regions of the initial mask.

26. The laser processing mask set for projection laser processing according to claim 23, wherein: The first correction mask includes: a first calibration mask base; and A first correction light-shielding layer is formed on a surface of the first correction mask substrate within the first mapping mask region of the one or more first mapping regions of the first correction mask.

27. The laser processing mask set for projection laser processing according to any one of claims 2 to 8 and 11 to 19, characterized in that: The initial mask includes an initial mask mask base, and the initial mask mask base includes one or more penetrating regions and non-penetrating regions, and the one or more penetrating regions penetrate the initial mask mask base along the propagation direction of the laser beam, and the one or more penetrating regions are the one or more initial non-mask regions of the initial mask, and the non-penetrating regions are the initial mask regions of the initial mask.

28. The laser processing mask set for projection laser processing according to claim 27, wherein: The first correction mask includes: a first calibration mask base; and A first correction light-shielding layer is formed on a surface of the first correction mask substrate within the first mapping mask region of the one or more first mapping regions of the first correction mask.

29. A projection laser processing method using a laser processing mask set, characterized in that: The following steps are involved: Providing a processing laser device, a laser processing mask set, and a projection lens, so that the laser processing mask set, the projection lens, and a processing workpiece are sequentially arranged on a propagation path of a laser beam generated by the processing laser device along the propagation direction of the laser beam, wherein the laser processing mask set includes an initial mask and a first correction mask, the initial mask is an amplitude mask, the first correction mask is an amplitude mask or a phase mask, and the first correction mask is arranged between the initial mask and the projection lens or between the initial mask and the first correction mask and the projection lens; and performing a laser processing process on the workpiece; The first correction mask is used to effectively control the size of the laser beam projected on the focal plane after passing through the laser processing mask set and the projection lens.

30. The projection laser processing method using a laser processing mask set according to claim 29, wherein: The laser processing process is a laser drilling process, a laser cutting process, a laser polishing process, a laser patterning process or any combination thereof.

31. The projection laser processing method using a laser processing mask set according to claim 29, wherein: The laser processing mask set is the laser processing mask set for projection laser processing according to any one of claims 1 to 19.

32. The projection laser processing method using a laser processing mask set according to claim 31, wherein: The laser processing mask set further includes a second correction mask, the initial mask is set between the first correction mask and the second correction mask, or the first correction mask is set between the initial mask and the second correction mask, and the second correction mask is an amplitude mask or a phase mask, wherein the first correction mask and the second correction mask are used to effectively control the size of the laser beam projected onto the focal plane after passing through the laser processing mask set and the projection lens.

33. The projection laser processing method using a laser processing mask set according to claim 32, wherein: The second correction mask includes: One or more second mapping areas, wherein the one or more second mapping areas of the second correction mask are areas on the second correction mask mapped from the one or more initial non-mask areas of the initial mask along the propagation path of the laser beam, each of the one or more second mapping areas has a shape and an area that are respectively identical to the shape and area of ​​the corresponding one of the one or more initial non-mask areas, and any one of the one or more second mapping areas is an amplitude mask or a phase mask.

34. The projection laser processing method using a laser processing mask set according to claim 33, wherein: wherein at least one of the one or more second mapping regions is an amplitude mask, and each of the one or more second mapping regions of the amplitude mask comprises: a second mapped mask region; and The second maps the non-mask area.

35. The projection laser processing method using a laser processing mask set according to claim 29, wherein: The laser processing mask set is a laser processing mask set for projection laser processing according to any one of claims 2 to 8 and 11 to 19, and the initial mask comprises: an initial mask substrate; and A preliminary light-shielding layer is formed on the first surface of the preliminary mask base in the preliminary mask region of the preliminary mask.

36. The projection laser processing method using a laser processing mask set according to claim 35, wherein: The initial mask substrate has a second surface, the second surface is opposite to the first surface of the initial mask substrate along the propagation path of the laser beam, and the first correction mask includes: A first correction light-shielding layer is formed on the second surface of the initial mask substrate, and the first correction light-shielding layer is the first mapping mask region of the one or more first mapping regions of the first correction mask.

37. The projection laser processing method using a laser processing mask set according to claim 35, wherein: The initial mask base of the initial mask includes one or more penetrating regions, and the one or more penetrating regions penetrate the initial mask base along the propagation direction of the laser beam, and the one or more penetrating regions are the one or more initial non-mask regions of the initial mask.

38. The projection laser processing method using a laser processing mask set according to claim 35, wherein: The first correction mask includes: a first calibration mask base; and A first correction light-shielding layer is formed on a surface of the first correction mask substrate within the first mapping mask region of the one or more first mapping regions of the first correction mask.

39. The projection laser processing method using a laser processing mask set according to claim 29, wherein: Wherein the laser processing mask group is a laser processing mask group for projection laser processing as described in any one of claims 2 to 8 and 11 to 19, the initial mask includes an initial mask mask base, the initial mask mask base includes one or more penetrating areas and non-penetrating areas, the one or more penetrating areas penetrate the initial mask mask base along the propagation direction of the laser beam, the one or more penetrating areas are the one or more initial non-mask areas of the initial mask, and the non-penetrating areas are the initial mask areas of the initial mask.

40. The projection laser processing method using a laser processing mask set according to claim 39, wherein: The first correction mask includes: a first calibration mask base; and A first correction light-shielding layer is formed on a surface of the first correction mask substrate within the first mapping mask region of the one or more first mapping regions of the first correction mask.

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