Wafer processing apparatus and method

Abstract

The application relates to a wafer processing device and method, the wafer processing device comprising an emission module, a defect detection module and a control module, wherein the control module is connected with the defect detection module and the emission module respectively; the defect detection module is used for acquiring an edge image of a wafer, and in the case that it is determined that there is a defect in the edge of the wafer according to the edge image, sending feedback information to the control module; the control module is used for controlling the emission module to emit plasma to the edge area of the wafer according to the feedback information, so as to eliminate the defect. The wafer processing device of the application is installed on a machine table of a deposition device, an etching device or the like, can eliminate the defects such as falling off and peeling off of the edge of the wafer in time during the working process of the machine table, avoids the falling-off objects from falling into the normal area of the wafer in the subsequent process, and improves the product yield.

Description

Technical Field

[0001] This application relates to the field of semiconductor process technology, and in particular to a wafer processing apparatus and method. Background Technology

[0002] In existing processes, as layers of film are stacked on the wafer, such as silicon nitride and silicon carbide nitride, the difference in stress between the crystal face and the back face of the wafer can be large, which can lead to defects such as peeling and cracking at the edge of the wafer, affecting product yield. Summary of the Invention

[0003] Therefore, it is necessary to provide a wafer processing apparatus and method that can promptly remove defects such as detachment and peeling from the wafer edge.

[0004] In a first aspect, this application provides a wafer processing apparatus, comprising: an emission module, a defect detection module, and a control module, wherein the control module is connected to the defect detection module and the emission module respectively;

[0005] The defect detection module is used to acquire edge images of the wafer and, if it is determined from the edge images that there are defects at the edge of the wafer, to send feedback information to the control module.

[0006] The control module is used to control the emission module to emit plasma towards the edge region of the wafer based on the feedback information, so as to remove the defects.

[0007] In one embodiment, the wafer processing apparatus further includes:

[0008] A bias module, connected to the control module, is used to adjust the trajectory of the plasma emitted by the emission module.

[0009] In one embodiment, the biasing module includes a first set of biasing electrodes and a second set of biasing electrodes; each set of biasing electrodes includes two electrode plates disposed opposite to each other;

[0010] The first set of bias electrodes is used to change the trajectory of the plasma in a first direction;

[0011] The second set of bias electrodes is used to change the trajectory of the plasma in a second direction; the first direction intersects the second direction.

[0012] In one embodiment, the wafer processing apparatus further includes:

[0013] A wafer edge positioning module, connected to the control module, is used to acquire the edge region of the wafer;

[0014] The control module is further configured to determine the bias parameters of the bias module based on the feedback information and the edge region, and control the bias module to adjust the motion trajectory of the plasma according to the bias parameters so that the plasma falls into the edge region; the bias parameters include at least the electric field strength.

[0015] In one embodiment, the wafer edge positioning module is used to determine the edge region based on the tray boundary, the wafer boundary, and a preset distance from the wafer boundary toward the wafer center; wherein the wafer is placed on the tray.

[0016] In one embodiment, the control module is further configured to acquire the circumference and rotation speed of the wafer, determine the time interval between the defect region rotating to the plasma bombardment region within the edge region based on the circumference, the rotation speed, and the feedback information, and control the emission module to emit plasma based on the time interval.

[0017] In one embodiment, the wafer processing apparatus further includes a path locking module; the plasma enters the reaction chamber through the path locking module.

[0018] Secondly, this application also provides a wafer fabrication method, the method comprising:

[0019] Obtain the edge image of the wafer;

[0020] Based on the edge image, determine the presence of defects at the wafer edge;

[0021] In the event of defects at the edge of the wafer, the control emission module emits plasma toward the edge region of the wafer to remove the defects.

[0022] In one embodiment, the step of controlling the emission module to emit plasma toward the edge region of the wafer to remove the defects when defects exist at the wafer edge includes:

[0023] Obtain the edge region of the wafer;

[0024] Based on the edge region, the bias parameters of the bias module are determined, and the bias module is used to adjust the motion trajectory of the plasma emitted by the emission module;

[0025] The control emission module emits plasma towards the edge region of the wafer to eliminate the defects.

[0026] In one embodiment, the step of controlling the emission module to emit plasma toward the edge region of the wafer to remove the defects when defects exist at the wafer edge includes:

[0027] Obtain the circumference and rotational speed of the wafer;

[0028] Based on the perimeter and the rotation speed, the time interval between the defect region rotating to the plasma bombardment region within the edge region is determined;

[0029] The emission module is controlled to emit plasma toward the plasma bombardment region according to the time interval.

[0030] An unexpected and beneficial effect of this application is that the wafer processing apparatus includes an emission module, a defect detection module, and a control module. The control module is connected to the defect detection module and the emission module, respectively. The wafer processing apparatus can be installed on the machine table of equipment such as deposition equipment and etching equipment. In this way, during the operation of the machine table, such as when depositing a film layer on the wafer, the edge image of the wafer can be acquired in real time through the defect detection module. If it is determined that there is a defect on the edge of the wafer based on the edge image, the defect detection module can send feedback information to the control module to indicate that there is a detachment defect or a detachment trend in the wafer edge area. After receiving the feedback information, the control module can control the emission module to emit plasma to the edge area of ​​the wafer to remove the detachment defect of the wafer edge in time through ion bombardment. This avoids the polymer at the defect location from falling into the normal area of ​​the wafer during subsequent process and affecting the performance of the normal area, thereby improving the product yield. In addition, by bombarding the edge area of ​​the wafer with plasma, the edge area of ​​the wafer can also be thinned. With the thickness reduced, the stress will also be reduced, thereby reducing the risk of detachment defects in the normal area of ​​the wafer edge. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 This is a schematic diagram of the detachment defects that occur at the edge of a wafer when SiCN (silicon carbonitride) is deposited on the wafer.

[0033] Figure 2 This is a structural block diagram of a wafer processing apparatus provided in one embodiment;

[0034] Figure 3 This is a schematic diagram of the structure of a wafer processing apparatus provided in one embodiment;

[0035] Figure 4 A flowchart of a wafer fabrication method provided in one embodiment;

[0036] Figure 5 The flowchart provided in one embodiment describes the steps of controlling the emission module to emit plasma towards the edge region of the wafer to remove defects when defects exist at the wafer edge;

[0037] Figure 6 A flowchart of steps provided for another embodiment, in the event of defects at the wafer edge, to control the emission module to emit plasma toward the edge region of the wafer to remove the defects.

[0038] Explanation of reference numerals in the attached figures:

[0039] 100 - Emission module, 200 - Defect detection module, 300 - Control module, 410 - Reaction chamber, 420 - Wafer, 430 - Tray, 500 - Bias module, 510 - First set of bias electrodes, 520 - Second set of bias electrodes, 600 - Crystal edge positioning module, 700 - Path locking module. Detailed Implementation

[0040] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0041] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0042] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, the element or feature described as “below,” “under,” or “below” will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. Furthermore, the device may also include other orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptive terms used herein will be interpreted accordingly.

[0043] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, in this specification, the term “and / or” includes any and all combinations of the associated listed items.

[0044] In wafer fabrication processes, multiple layers of film are typically deposited on the crystal face or back of the wafer. This can lead to an imbalance of stress between the crystal face and back, making it prone to peeling and delamination defects at the wafer edges. For example, in back-end of line (BEOL) processes, after depositing SiCN (silicon carbide) on the wafer, the increased stress difference between the crystal face and back can cause defects such as delamination and delamination at the wafer edges. Figure 1 The image shows a detachment defect. If this defect is not removed promptly, the polymer at the defect site may detach during subsequent processing and fall into the normal area of ​​the wafer, affecting the performance of the normal area.

[0045] Based on this, this application provides a wafer processing apparatus that can be installed on the machine base of equipment such as deposition equipment and etching equipment, such as... Figure 2 and Figure 3 As shown, the wafer processing apparatus includes an emission module 100, a defect detection module 200, and a control module 300. The control module 300 is connected to both the defect detection module 200 and the emission module 100. The defect detection module 200 is installed inside the reaction chamber 410. The control module 300 and the emission module 100 can be installed either inside or outside the reaction chamber 410.

[0046] The defect detection module 200 is used to acquire edge images of the wafer 420 and, if it determines that a defect exists at the wafer edge based on the edge image, to send feedback information to the control module 300. The edge image refers to an image of the edge region of the wafer 420, such as an image of a region extending 3mm from the wafer edge towards the wafer center. The defect detection module 200 can acquire an overall image of the wafer using methods such as infrared imaging or electron beam imaging, and then extract an image of the edge region from the overall image. Alternatively, it can directly acquire images of the edge region of the wafer using methods such as infrared imaging or electron beam imaging. The defect detection module 200 can also acquire a normal image of the wafer edge in advance and visually compare the edge image with the normal image to determine whether a detachment defect exists at the wafer edge and the extent of the detachment. When the defect detection module 200 determines that a defect exists at the wafer edge based on the edge image, it sends feedback information to the control module 300. The feedback information indicates the extent of detachment at the wafer edge, such as a detachment trend or the presence of an existing detachment defect.

[0047] The control module 300 controls the emission module 100 to emit plasma towards the edge region of the wafer 420 based on feedback information to remove defects. Upon receiving feedback information, the control module 300 controls the emission module 100 to emit plasma towards the edge region of the wafer 420, removing defects such as detachment and peeling by bombarding the edge region with plasma. The plasma can be tetravalent ions or inert neutral ions in a plasma state, such as Xe ions, Ar ions, C ions, Si ions, and N ions in a plasma state. The landing point of the plasma emitted by the emission module 100 at the wafer edge region can be fixed relative to the defect detection module 200. This is because the wafer to be processed is usually in a rotating state during machine operation. Therefore, even if the landing point is fixed, the wafer edge region with detachment defects will rotate to the landing point and be bombarded by the plasma.

[0048] In this embodiment of the application, the wafer processing apparatus includes an emission module 100, a defect detection module 200, and a control module 300, with the control module 300 connected to the defect detection module 200 and the emission module 100, respectively. The wafer processing apparatus can be installed on the machine table of deposition equipment, etching equipment, etc. In this way, during the operation of the machine table, for example when depositing SiCN on wafer 420, the defect detection module 200 can acquire the edge image of wafer 420 in real time. If it is determined that there is a defect on the edge of the wafer based on the edge image, feedback information is sent to the control module 300 to indicate that there is a detachment defect or a detachment trend in the edge area of ​​the wafer. When the control module 300 receives the feedback information, it controls the emission module 100 to emit plasma to the edge area of ​​the wafer to remove the detachment defect of the wafer edge in time through ion bombardment, so as to avoid the polymer at the defect location from falling into the normal area and affecting the performance of the normal area, thereby improving the product yield. In addition, by bombarding the edge area of ​​wafer 420 with plasma, the edge area of ​​wafer 420 can also be thinned. With the thickness reduced, the stress will also be reduced, thereby reducing the risk of detachment defects in the normal area of ​​the wafer edge.

[0049] In one embodiment, the emission module 100 includes an ionization chamber, an acceleration chamber, and an emission channel. The ionization chamber ionizes inert gases, neutral gases, etc., into a plasma state and releases the plasma into the acceleration chamber. After being accelerated in the acceleration chamber, the plasma gains an initial velocity and bombardment energy, and then reaches the edge region of the wafer through the emission channel. The initial velocity and bombardment energy of the plasma can be dynamically set by the control module 300 based on feedback information sent by the defect detection module 200, or they can be set to fixed values. The emission module 100 may include at least one emission channel. If the emission module 100 includes multiple emission channels, the multiple emission channels can be set at different positions in the reaction chamber, as long as it is ensured that the plasma falls to the edge region of the wafer after passing through the emission channel. These emission channels can emit the same plasma or different plasmas, and the concentration of the emitted plasma can be the same or different; this embodiment does not impose any limitations here. In some embodiments, the emission module 100 may include an emission gun, such as a dual-channel ion emission gun.

[0050] Furthermore, the control module 300 can also control at least one emission channel to emit plasma based on feedback information. For example, if the control module 300 determines based on feedback information that the wafer edge region has a large tendency to detach and only requires slight assistance to remove the detachment defect, the control module 300 can control only one emission channel to emit plasma to the wafer edge region. If the control module 300 determines based on feedback information that the wafer edge region has a tendency to detach but requires greater external force to remove the detachment defect, the control module 300 can control multiple emission channels to emit plasma to the wafer edge region.

[0051] In one embodiment, such as Figure 3 As shown, the wafer processing apparatus also includes a bias module 500. The bias module 500 is connected to the control module 300 and can be located either inside or outside the reaction chamber 410. The bias module 500 is used to adjust the trajectory of the plasma emitted by the emission module 100. It can be understood that after adjustment by the bias module 500, the plasma emitted by the emission module 100 can more accurately fall onto the edge region of the wafer.

[0052] Specifically, the bias module 500 may include a first set of bias electrodes 510 and a second set of bias electrodes 520, each set of bias electrodes including two electrode plates arranged opposite to each other.

[0053] like Figure 3 As shown, the first set of bias electrodes 510 can be used to change the trajectory of the plasma in the first direction, and the second set of bias electrodes 520 can be used to change the trajectory of the plasma in the second direction. The first direction and the second direction intersect. The angle between the first direction and the second direction is (0°, 180°). It can be understood that the plasma emitted by the emission module 100 can pass sequentially between the two electrode plates of the first set of bias electrodes 510 and between the two electrode plates of the second set of bias electrodes 520. By changing the voltage between the electrode plates of the two sets of bias electrodes through the control module 300, the electric field strength between the two electrode plates of the first set of bias electrodes 510 and the two electrode plates of the second set of bias electrodes 520 is adjusted, thereby changing the acceleration of the plasma in the first direction and the acceleration in the second direction, thus changing the trajectory of the plasma, so that the plasma can accurately fall onto the edge region of the wafer.

[0054] In one embodiment, please refer to... Figure 3The wafer processing apparatus also includes a wafer edge positioning module 600. The wafer edge positioning module 600 can be disposed within the reaction chamber 410 and is connected to the control module 300. The wafer edge positioning module 600 is used to acquire the edge region of the wafer 420. Different wafers may have different specifications. To ensure that the plasma emitted by the emission module 100 can more accurately land on the edge region of the wafer 400, the wafer edge positioning module 600 can be used to determine the edge region of each wafer. For example, the wafer edge positioning module 600 can determine the edge region of the wafer through spectral detection methods such as infrared imaging or electron beam imaging.

[0055] Specifically, the wafer edge positioning module 600 is used to determine the edge region based on the tray boundary, the wafer boundary, and a preset distance from the wafer boundary toward the wafer center. The wafer 420 is placed on the tray 430. The preset distance from the wafer boundary toward the wafer center can be used as the edge region of the wafer. The specifications of the tray 430 are generally fixed; therefore, the tray boundary can be used as the origin of the coordinate system, and the position information of the edge region can be determined based on the distance from the wafer boundary to the tray boundary and the preset distance. For example, the preset distance can be 2mm-3mm, such as 2mm, 2.5mm, 3mm, or other values; this embodiment does not impose limitations.

[0056] Furthermore, the control module 300 is also used to determine the bias parameters of the bias module 500 based on feedback information and the edge region, and control the bias module to adjust the trajectory of the plasma so that the plasma falls into the edge region. The bias parameters may include electric field strength, voltage, etc. It can be understood that after the control module 300 determines the presence and extent of detachment defects in the edge region of the wafer based on feedback information, it can adjust the electric field strength of the bias module 500 according to the actual position of the edge region, thereby changing the acceleration of the plasma passing through the bias module 500, so that the plasma emitted by the emission module 100, after being adjusted by the bias module 500, can accurately fall into the edge region of the wafer.

[0057] In one embodiment, the control module 300 is further configured to acquire the perimeter and rotation speed of the wafer, determine the time interval between the rotation of the defect region to the plasma bombardment region in the edge region based on the perimeter, rotation speed and feedback information, and control the emission module 100 to emit plasma based on the time interval.

[0058] The plasma bombardment region refers to the actual area where the plasma falls. For example... Figure 3As shown, to improve the accuracy of plasma impact point positioning, the projection area A of the crystal edge positioning module 600 on the wafer can be used as the plasma bombardment area. Feedback information includes not only the degree of detachment but also the specific location of the defect, i.e., the area where the defect is located. After determining the defect area based on the feedback information, the control module 300 can calculate the time interval between the defect area rotating to the plasma bombardment area within the edge region, based on the wafer circumference, rotation speed, the location information of the defect area, and the location information of the plasma bombardment area. Based on this time interval, the emission module 100 can be controlled to start emitting plasma to reduce the impact of plasma on the normal area at the wafer edge. Furthermore, to avoid missing defect areas, the emission module 100 can be controlled to emit plasma a certain amount of time in advance, or the emission module 100 can be controlled to stop emitting plasma a certain amount of time after the defect area has passed the plasma bombardment area.

[0059] In one embodiment, please refer to... Figure 3 The wafer processing apparatus also includes a path locking module 700. The path locking module 700 is disposed on the reaction chamber. Plasma enters the reaction chamber through the path locking module 700. The path locking module 700 may include an ion incident window and a locking unit, the locking unit being used to adjust the width of the ion incident window so that plasma emitted by the emission module 100 can enter the reaction chamber through the ion incident window. For example, the width of the ion incident window is approximately 5 mm.

[0060] In one embodiment, this application also provides a wafer fabrication method, which can be applied to the control module of the wafer fabrication apparatus provided in any of the above embodiments. For example... Figure 4 As shown, the wafer fabrication method includes steps S410-S430.

[0061] S410, acquire the edge image of the wafer.

[0062] The control module 300 can acquire the edge image of the wafer 420 through the defect detection module 200.

[0063] S420, based on the edge image, determines the presence of defects at the wafer edge.

[0064] The control module 300 can determine the presence of defects at the edge of the wafer based on the edge image.

[0065] S430 controls the emission module to emit plasma towards the edge region of the wafer to remove defects when defects exist at the wafer edge.

[0066] When the control module 300 determines that a defect exists at the edge of the wafer, it can control the emission module 100 to emit plasma towards the edge region of the wafer 420, thereby removing the defect through plasma bombardment. In the presence of a defect, the control module 300 can also determine the degree of defect detachment based on the edge image and control the initial velocity and bombardment energy of the plasma emitted by the emission module 100 accordingly.

[0067] In this embodiment, by acquiring an edge image of the wafer, the presence of defects at the wafer edge is determined based on the edge image. If defects exist at the wafer edge, the emission module 100 is controlled to emit plasma towards the edge region of the wafer to remove the defects. This can promptly remove detached defects in the wafer edge region and prevent defects from falling into the normal region of the wafer and affecting the performance of the normal region. In addition, by bombarding the edge region of the wafer with plasma, the thickness of the edge region can be reduced, stress can be reduced, and thus the risk of detached defects can be reduced.

[0068] In one embodiment, such as Figure 5 As shown, in the case of defects at the edge of the wafer, the emission module is controlled to emit plasma towards the edge region of the wafer to remove the defects, including steps S510-S530.

[0069] S510, acquires the edge region of the wafer.

[0070] The control module 300 can determine the edge region of the wafer through the wafer edge positioning module.

[0071] S520 determines the bias parameters of the bias module based on the edge region. The bias module is used to adjust the motion trajectory of the plasma emitted by the emission module.

[0072] The control module 300 can adjust the bias parameters of the bias module 500 according to the edge region, thereby changing the trajectory of the plasma. The bias parameters include at least the electric field strength.

[0073] The S530 controls the emission module to emit plasma towards the edge region of the wafer to remove defects.

[0074] The control module 300 can control the emission module 100 to emit plasma to the edge region of the wafer 420. After being adjusted by the bias module 500, the plasma can accurately fall to the edge region of the wafer 420, eliminating defects caused by detachment.

[0075] In this embodiment, by acquiring the edge region of the wafer, determining the bias parameters of the bias module based on the edge region, and controlling the emission module to emit plasma towards the edge region of the wafer, the plasma can accurately fall onto the edge region of the wafer, reducing the impact of the plasma on other normal areas on the wafer.

[0076] In one embodiment, such as Figure 6 As shown, in the case of defects at the edge of the wafer, the emission module is controlled to emit plasma towards the edge region of the wafer to remove the defects, including steps S610-S630.

[0077] S610, obtains the wafer's circumference and rotation speed.

[0078] S620 determines the time interval between the rotation of the defect region to the plasma bombardment region in the edge region based on the perimeter and rotation speed.

[0079] The plasma bombardment region refers to the actual landing point of plasma at the edge of the wafer. Compared to the equipment, the plasma bombardment region is fixed and does not rotate with the wafer's rotation. The defect region refers to the area on the wafer edge where there is a tendency for detachment or a detachment defect. The control module 300 can determine the relative position information between the defect region and the plasma bombardment region through the edge image. Then, based on the perimeter and rotation speed, it determines the time interval between the defect region rotating to the plasma bombardment region within the edge region.

[0080] S630 controls the emission module to emit plasma into the plasma bombardment area according to the time interval.

[0081] In this embodiment, the circumference and rotation speed of the wafer can be obtained, and the time interval between the defect area rotating to the plasma bombardment area in the edge area can be determined based on the circumference and rotation speed. Furthermore, the emission module is controlled to start emitting plasma to the plasma bombardment area according to the time interval, so that the plasma can accurately fall to the defect area and reduce the impact of plasma on other normal areas at the edge of the wafer.

[0082] In addition, to ensure that no defect area is missed, the control module can control the launch module to launch plasma into the plasma bombardment area in advance based on time intervals, and can also control the launch module to stop launching plasma a certain period of time after the defect area has passed through the plasma bombardment area.

[0083] It should be understood that although the steps in the flowcharts above are shown in the order illustrated, these steps are not necessarily executed in that order. Unless otherwise explicitly stated herein, there is no strict order constraint on the execution of these steps, and they can be executed in other orders. Moreover, at least some of the steps may include multiple steps or stages, which are not necessarily completed at the same time, but may be executed at different times. The execution order of these steps or stages is not necessarily sequential, but may alternate or alternate with other steps or at least some of the steps or stages within other steps.

[0084] In the description of this specification, references to terms such as "some embodiments," "other embodiments," and "ideal embodiments" indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0085] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0086] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A wafer processing apparatus, characterized in that, The wafer processing apparatus is installed on the machine table of an etching equipment or a deposition equipment. The wafer processing apparatus includes: an emission module, a defect detection module, a bias module, a crystal edge positioning module, and a control module, wherein the control module is connected to the defect detection module, the emission module, the bias module, and the crystal edge positioning module respectively. The defect detection module is used to acquire wafer edge images in real time during the operation of the machine, and to send feedback information to the control module when it is determined that there are defects on the wafer edge based on the edge images. The bias module is used to adjust the trajectory of the plasma emitted by the emission module; The edge positioning module is used to obtain the edge region of the wafer; The control module is used to determine the bias parameters of the bias module based on the feedback information and the edge region, and control the bias module to adjust the motion trajectory of the plasma according to the bias parameters so that the plasma falls into the edge region to eliminate the defect; the bias parameters include at least the electric field strength.

2. The wafer processing apparatus according to claim 1, characterized in that, The biasing module includes a first set of biasing electrodes and a second set of biasing electrodes; each set of biasing electrodes includes two electrode plates arranged opposite to each other. The first set of bias electrodes is used to change the trajectory of the plasma in a first direction; The second set of bias electrodes is used to change the trajectory of the plasma in a second direction; the first direction intersects the second direction.

3. The wafer processing apparatus according to claim 1, characterized in that, The wafer edge positioning module is used to determine the edge region based on the tray boundary, the wafer boundary, and a preset distance from the wafer boundary toward the wafer center; wherein the wafer is placed on the tray.

4. The wafer processing apparatus according to claim 1, characterized in that, The control module is also used to acquire the circumference and rotation speed of the wafer, determine the time interval between the defect region rotating to the plasma bombardment region in the edge region based on the circumference, the rotation speed and the feedback information, and control the emission module to emit plasma based on the time interval.

5. The wafer processing apparatus according to claim 1, characterized in that, The wafer processing apparatus further includes a path locking module; the plasma enters the reaction chamber through the path locking module.

6. The wafer processing apparatus according to claim 1, characterized in that, The launching module includes at least one launching channel; if the launching module includes multiple launching channels, the launching channels are located at different positions in the reaction chamber.

7. A wafer fabrication method, characterized in that, Applied to a wafer processing apparatus, the wafer processing apparatus being mounted on a machine table of an etching or deposition apparatus, the method includes: During the machine's operation, the edge image of the wafer is acquired in real time; Based on the edge image, determine the presence of defects at the wafer edge; In the case of defects at the edge of the wafer, the edge region of the wafer is obtained; Based on the edge region, the bias parameters of the bias module are determined, and the bias module is used to adjust the motion trajectory of the plasma emitted by the emission module; The control emission module emits plasma towards the edge region of the wafer to eliminate the defects.

8. The method according to claim 7, characterized in that, The control emission module emits plasma toward the edge region of the wafer to remove the defects, including: Obtain the circumference and rotational speed of the wafer; Based on the perimeter and the rotation speed, the time interval between the defect region rotating to the plasma bombardment region within the edge region is determined; The emission module is controlled to emit plasma toward the plasma bombardment region according to the time interval.

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