Antenna structure in glass core

Abstract

An antenna structure in a glass core is disclosed. Embodiments may include an apparatus comprising: a substrate, where the substrate is an amorphous glass layer; a hole into the substrate; and a structure in the hole, where the structure comprises: a first portion comprising a first material component; and a second portion comprising a second material composition wherein the first portion and the second portion are vertically stacked within the aperture.

Description

Background Art

[0001] Electronic packaging solutions often rely on wired electrical interconnects to communicatively couple components together. For example, wired electrical interconnects may include copper traces, vias, pads, and / or the like. However, as devices continue to scale to smaller feature sizes and wiring complexity increases, the processes used to design and fabricate wired electrical interconnects within the package substrate have become more complex. Furthermore, bandwidth limitations and increasing pin counts have made it difficult to provide electrical wiring within the package substrate.

[0002] Accordingly, some solutions for wireless coupling within a packaging substrate have been proposed. In particular, radio frequency (RF) coupling between components has been proposed as a solution to achieve higher data transmission rates and reduce wiring complexity (especially in the case of three-dimensional (3D) heterogeneous integration). RF coupling can be implemented through the use of RF antenna structures, RF filtering structures, waveguide structures (e.g., parallel plate waveguides, dielectric waveguides, substrate integrated waveguides) and / or passive RF structures (e.g., power dividers / combiners, phase shifters, impedance loads (R / L / C) or attenuators). However, the fabrication of such devices relies on accurate control of the dimensions of the antenna structure. Currently, this capability is limited to applications within the build layer. Unfortunately, fabricating such RF components within the build layer may lead to significant warping issues, especially in high volume manufacturing (HVM) process flows. BRIEF DESCRIPTION OF THE DRAWINGS

[0003] Figure 1 is a cross-sectional view of a package substrate having an organic core with integrated vias according to an embodiment.

[0004] Figure 2A is a cross-sectional view of a glass core having a radio frequency (RF) structure embedded within the core, wherein the RF structure has a height less than a thickness of the core, according to an embodiment.

[0005] Figure 2B is a cross-sectional view of a glass core having an RF structure with a non-uniform depth into the core according to an embodiment.

[0006] Figure 2C is a cross-sectional view of a glass core having an RF structure including an electrically floating conductive region and a dielectric plug added above the conductive region in a vertically stacked configuration according to an embodiment.

[0007] Figure 2D is a cross-sectional view of a glass core with a dielectric RF structure according to an embodiment.

[0008] Figure 2Eis a cross-sectional view of a glass core having an RF structure including vertically stacked conductive regions separated by dielectric regions, according to an embodiment.

[0009] Figure 3A is a cross-sectional view of a glass core having a series of RF structures arranged in a row with decreasing depth according to an embodiment.

[0010] Figure 3B is a cross-sectional view of a glass core having a first series of RF structures having opposing conductive regions, each having a dielectric region between the opposing conductive regions, and a second series of RF structures having floating conductive regions of decreasing height, according to an embodiment.

[0011] Figure 4 is a cross-sectional view of a multi-layer glass core having an RF structure having a depth that is different from the total thickness of the glass core or the thickness of a sub-layer of the glass core according to an embodiment.

[0012] Figure 5 is a cross-sectional view of a glass core having a first RF structure wirelessly coupled to an external component and a second RF structure wirelessly coupled to each other in accordance with an embodiment.

[0013] Figures 6A-6C are plan views of a glass core with RF structures arranged in various antenna configurations according to an embodiment.

[0014] Figure 7 is a perspective view of a glass module including an RF structure according to an embodiment.

[0015] Figures 8A-8L is a cross-sectional diagram depicting a process for fabricating various RF structures within a glass core, according to an embodiment.

[0016] Figure 9 is a process flow diagram of a process for fabricating RF structures within a glass core, according to an embodiment.

[0017] Figure 10 is a cross-sectional view of an electronic system including a glass core with integrated RF structures according to an embodiment.

[0018] Figure 11 is a schematic diagram of a computing device constructed according to an embodiment. DETAILED DESCRIPTION

[0019] Described herein are electronic systems, and more particularly, antenna structures having a height that varies from the thickness of the glass core and fabricated in a glass core according to various embodiments. In the following description, various aspects of the illustrative embodiments will be described using terms commonly employed by those skilled in the art to convey the substance of their work to others skilled in the art. However, it will be apparent to those skilled in the art that the present disclosure may be practiced with only some of the described aspects. For purposes of explanation, specific quantities, materials, and configurations are set forth in order to provide a comprehensive understanding of the illustrative embodiments. However, it will be apparent to those skilled in the art that the present disclosure may be practiced without the specific details. In other instances, well-known features are omitted or simplified so as not to obscure the illustrative embodiments.

[0020] Various operations will be described as multiple discrete operations in sequence in a manner that is most helpful for understanding the present disclosure, however, the order of description should not be construed as implying that these operations must be order-dependent. In particular, these operations do not need to be performed in the order presented.

[0021] Various embodiments or aspects of the present disclosure are described herein. In some implementations, different embodiments are practiced separately. However, the embodiments are not limited to embodiments practiced in isolation. For example, two or more different embodiments may be combined together so as to be practiced as a single device, process, structure, etc. In some instances, the entirety of the various embodiments may be combined together. In other instances, portions of a first embodiment may be combined with portions of one or more different embodiments. For example, portions of a first embodiment may be combined with portions of a second embodiment, or portions of a first embodiment may be combined with portions of a second embodiment and portions of a third embodiment.

[0022] As described above, radio frequency (RF) structures provide wireless coupling solutions to overcome the limitations inherent in the electrical wiring currently used in most electronic packaging solutions. For example, RF structures can achieve improved data transfer rates for communication links and improved integration for three-dimensional (3D) heterogeneous integration. RF structures can also reduce wiring complexity. In existing solutions, these RF structures are limited to being included in the build-up layers of the package substrate. Figure 1 An example of such a solution is shown in .

[0023] Now refer to Figure 1, shows a cross-sectional view of a packaging substrate 100. The packaging substrate 100 may include an organic core 110. For example, an organic dielectric material (which may include glass fiber reinforcement, etc.) is provided between dielectric building layers 121. A conductive layer 105A may be provided below the bottom building layer 121 (below the core 110), and a conductive layer 105B may be provided above the top building layer 121 (above the core 110). A first series of RF structures 130A-130D are formed on the left side of the packaging substrate 100, and a second series of RF structures 131A-131D are formed on the right side of the packaging substrate 100. For RF structures that pass through the core 110, the height of the RF structures 130 and the RF structures 131 is equal to the thickness of the core plus an integer multiple of the thickness of the individual building layers 121. For RF structures that terminate before the core 110, the height of the RF structures 130 and the RF structures 131 is an integer multiple of the thickness of the individual building layers 121. The RF structure 131 may also include dielectric plugs 132A- 132C over the RF structures 131B- 131D.

[0024] As will be appreciated, this configuration requires specific dimensions for RF structures 130 and 131. This can limit the design of RF systems. Accordingly, it is not always possible to create low-Q antennas. Furthermore, the integration of RF structures 130 and 131 within build-up layer 121 can lead to significant warpage issues within package substrate 100.

[0025] Accordingly, the embodiments disclosed herein move the formation of RF structures from the build layers into the core. In particular, a glass core is provided in place of an organic core. The use of a glass core can allow for improvements in the performance of RF systems due to improved electrical and mechanical properties. However, moving to a glass core solution is not without challenges. For example, through-glass vias in a glass core are limited to the height of the glass core. Therefore, multiple glass cores may need to be stacked in order to provide certain RF antenna sizes. In addition, forming thin glass layers (e.g., less than about 200 μm) is difficult and expensive. Therefore, the minimum step size in the height of the RF structure is around 200 μm (e.g., 200 μm, 400 μm, 600 μm, etc.). The number of glass layers that can be reliably stacked is also limited.

[0026] In the case of RF structures (e.g., antennas), the optimal via height for a low quality factor (Q) (or a larger operating frequency bandwidth) is typically found to be a quarter-wavelength for single-ended antenna structures and a half-wavelength for balanced antenna structures. For example, the optimal via height for forming a single-ended antenna structure for a 140 GHz center frequency in a glass core with a dielectric constant of 5 would be 240 μm. Assembling a 140 GHz antenna in a 200 μm glass layer would therefore result in a higher quality factor (Q) (or a narrower operating frequency bandwidth) but also have higher insertion loss.

[0027] Accordingly, embodiments disclosed herein include processes for forming RF structures within a glass core having a height that differs from the thickness of the glass core. This allows the RF structure to be customized for a specific center frequency while also having a large bandwidth (due to a lower quality factor, Q). Consequently, higher data transmission rates may be possible. Embodiments may also include RF structures that include one or more dielectric plugs vertically aligned with the conductive portion. This allows for customization of the dielectric constant around the RF structure to further improve the wireless performance of the system.

[0028] In an embodiment, the RF structure embedded in the glass core can act as a building block for generating an RF system within the packaging substrate. For example, the RF structure can be assembled into an RF system that includes a specific RF antenna configuration, a specific RF filtering configuration, a waveguide structure (e.g., a parallel plate waveguide, a dielectric waveguide, a substrate integrated waveguide) and / or a passive RF structure (e.g., a power divider / combiner, a phase shifter, an impedance load (R / L / C) or an attenuator). For example, a blind via as a dielectric material with controllable impedance and / or loss can be used to implement an impedance load and / or attenuator passive RF structure. In some embodiments, the RF system can be made into a glass module that can be integrated at any location within the packaging substrate (e.g., outside the core). In addition, integrating the RF structure within the glass core reduces the warping problem that may be faced when integrating the RF structure within the building layer of the packaging substrate.

[0029] Now refer to Figures 2A-2E , shows a series of cross-sectional views depicting portions of a package substrate 200 according to various embodiments. In the illustrated embodiment, upper and lower build-up layers are omitted for simplicity in order to emphasize the design of the various RF structures at least partially embedded within the glass core 240.

[0030] In an embodiment, the glass core 240 described herein can be substantially all glass. The glass core 240 can be a solid block comprising a glass material having an amorphous structure, wherein the solid glass core can also include various structures, such as vias, cavities, trenches, or other features, filled with one or more other materials (e.g., metals, metal alloys, dielectric materials, etc.). Thus, the glass core 240 can be distinguished from a "prepreg" or "FR4" core of, for example, a printed circuit board (PCB) substrate, which typically includes glass fibers embedded in a resinous organic material such as epoxy.

[0031] The glass core 240 can have any suitable dimensions. In a particular embodiment, the glass core 240 can have a thickness of approximately 50 μm or greater. For example, the thickness of the glass core 240 can be between approximately 50 μm and approximately 1.4 mm. However, smaller or larger thicknesses can also be used. The glass core 240 can have edge dimensions (e.g., length, width, etc.) of approximately 10 mm or greater. For example, the edge dimensions can be between approximately 10 mm and approximately 250 mm. However, larger or smaller edge dimensions can also be used. More generally, the area dimensions of the glass core 240 (from a top plan view) can be between approximately 10 mm×10 mm and approximately 250 mm×250 mm. In an embodiment, the glass core 240 can have a first side that is perpendicular or orthogonal to a second side. In a more general embodiment, the glass core 240 can include a rectangular prism volume having been removed and filled with other materials (e.g., metal, dielectric, etc.).

[0032] The glass core 240 may include a single monolithic glass layer. In other embodiments, the glass core 240 may include two or more discrete glass layers stacked on top of each other. The discrete glass layers may be provided in direct contact with each other, or the discrete glass layers may be mechanically coupled to each other by an adhesive or the like. The discrete layers of glass in the glass core 240 may each have a thickness of less than about 50 μm. For example, the discrete glass layers in the glass core 240 may have a thickness between about 25 μm and about 50 μm. However, the discrete glass layers may have a greater or lesser thickness in some embodiments. As used herein, "about" may refer to a range of values ​​that are within 10% of a specified value. For example, about 50 μm may refer to a range between 45 μm and 55 μm.

[0033] Glass core 240 can be any suitable glass formulation that exhibits the necessary mechanical robustness and compatibility with semiconductor package manufacturing and assembly processes. For example, glass core 240 can include aluminosilicate glass, borosilicate glass, aluminoborosilicate glass, quartz, fused silica, and the like. In some embodiments, glass core 240 can include one or more additives, such as, but not limited to, Al2O3, B2O3, MgO, CaO, SrO, BaO, SnO2, Na2O, KO, SrO, P2O3, ZrO2, Li2O, Ti, or Zn. More generally, glass core 240 can include silicon and oxygen, as well as any one or more of aluminum, boron, magnesium, calcium, barium, tin, sodium, potassium, strontium, phosphorus, zirconium, lithium, titanium, or zinc. In some embodiments, glass core 240 can include at least 23% silicon (by weight) and at least 26% oxygen (by weight). In some embodiments, glass core 240 can also include at least 5% aluminum (by weight).

[0034] Now refer to Figure 2A , shows a cross-sectional view of a portion of a package substrate 200 according to an embodiment. In an embodiment, the package substrate 200 may include a glass core 240. In an embodiment, the glass core 240 may have a thickness T. The thickness T may be similar to any of the glass core thicknesses described in more detail above. In a particular embodiment, the thickness T may be approximately 200 μm.

[0035] In an embodiment, a first conductive layer 205A (e.g., a copper layer) may be provided below the glass core 240, and a second conductive layer 205B (e.g., a copper layer) may be provided above the glass core 240. Layers 205A and 205B may also be traces, pads, etc. In an embodiment, a dielectric layer 241 or a dielectric layer 242 may be provided between the glass core 240 and the conductive layers 205A and 205B. Dielectric layers 241 and 242 may sometimes be referred to as buffer layers.

[0036] In an embodiment, one or more RF structures 245 and / or RF structures 246 may be at least partially embedded within the glass core 240. The RF structures 245 and 246 may include a conductive material (e.g., copper). The RF structures 245 and 246 may sometimes be referred to as vias. The RF structures 245 and 246 may be configured to propagate RF signals to components (or other RF structures) within and / or outside the package substrate 200, and / or receive RF signals from components (or other RF structures) within and / or outside the package substrate 200. In other words, the RF structures 245 and 246 may sometimes be considered RF antennas.

[0037] In an embodiment, RF structure 245 may be electrically coupled to either conductive layer 205A or conductive layer 205B. For example, RF structure 245A may be electrically coupled to conductive layer 205A, and RF structure 245B may be electrically coupled to conductive layer 205B. In an embodiment, RF structure 246 may be electrically floating. That is, RF structure 246 may not be directly electrically connected to other circuitry within package substrate 200. RF structure 245A and RF structure 246A may extend upward from the bottom surface of glass core 240, and RF structure 245B and RF structure 246B may extend downward from the top surface of glass core 240.

[0038] In embodiments, the RF structures 245 and 246 can be referred to as "blind" structures. That is, the RF structures 245 and 246 do not completely penetrate the thickness T of the glass core 240. For example, the RF structure 245A has a height H that is less than the thickness T of the glass core 240. The process for fabricating such blind structures will be described in more detail below. The ability to form blind structures enables the design of RF structures 245 and 246 with a desired quality factor Q. For example, the RF structures 245 and 246 can be designed with a low quality factor Q to provide a higher data transmission rate due to a wider operating bandwidth.

[0039] Now refer to Figure 2B , a cross-sectional view of a portion of a package substrate 200 is shown according to additional embodiments. Figure 2B The package substrate 200 in FIG. Figure 2A The package substrate 200 in FIG. 1 is designed except for the RF structure 245 and the RF structure 246. For example, Figure 2A In FIG, each pair of RF structures (i.e., a first pair including RF structure 245A and RF structure 246A, and a second pair including RF structure 245B and RF structure 246B) terminates at the same depth into the glass core 240. However, in Figure 2B In the embodiment of the present invention, each pair of RF structures (i.e., a first pair including RF structure 245A and RF structure 246A, and a second pair including RF structure 245B and RF structure 246B) is formed into the glass core at a different depth. The first pair of RF structures 245A / 246A has a depth difference D1, and the second pair of RF structures 245B / 246B has a depth difference D2. The depth difference D1 and the depth difference D2 can be as small as 1 μm and can be as large as approximately the thickness of the glass core 240.

[0040] Now refer to Figure 2C , shows a cross-sectional view of a portion of a package substrate 200 according to an additional embodiment. In an embodiment, the composition of the package substrate 200 with respect to the RF structure may be different from the package substrates described above. Figure 2CIn the embodiment of the present invention, all RF structures 245-248 are floating structures. However, instead of having a single continuous material over the entire height of the RF structures 245-248, the RF structures 245-248 can have multiple parts (or regions) provided in a vertical stack. As used herein, "vertical stack" can refer to components provided above (or below) each other, wherein the center lines of the stacked components substantially coincide with each other. "Substantially coincide" can refer to center lines that completely coincide with each other within 10 μm.

[0041] exist Figure 2C In a first embodiment, the RF structure 245 may have three parts 245A-245C. The second part 245B may be a conductive material (e.g., copper). The second part 245B may be in a vertical stack, between the first part 245A and the third part 245C. The first part 245A and the third part 245C may include a dielectric material. In an embodiment, the dielectric material of the first part 245A and the third part 245C may have a dielectric constant different from the dielectric constant of the glass core 240. Therefore, further tuning of the RF structure 245 may be provided. In other embodiments, the dielectric constant of the third part 245C may be similar to or the same as the dielectric constant of the glass core 240. In an embodiment, the first height H1 of the second part 245B may be less than the thickness T of the glass core 240. In addition, the first part 245A and the third part 245C are shown as having substantially similar heights. However, in other embodiments, the height of the first part 245A may be different from the height of the third part 245C. That is, the distance between the top of the second portion 245B and the top of the glass core 240 may be different from the distance between the bottom of the second portion 245B and the bottom of the glass core 240 .

[0042] exist Figure 2C In the second embodiment, RF structure 246 may also include three portions 246A-246C. However, instead of first portion 246A and third portion 246C having the same dielectric material (as shown in RF structure 245), first portion 246A and third portion 246C may have different dielectric constants. In addition, second portion 246B may have a second height H2 that is different from first height H1 of second portion 245B in RF structure 245. That is, different RF structures within the same glass core 240 may have second portions 245B / 246B of different heights.

[0043] exist Figure 2CIn the third embodiment, the RF structure 247 also has three parts 247A-247C. However, the RF structure 247 includes two conductive parts (i.e., a first part 247A and a third part 247C). The first part 247A can be separated from the third part 247C by a dielectric second part 247B. In the illustrated embodiment, the first part 247A and the third part 247C have substantially similar heights. However, in other embodiments, the height of the first part 247A can be different from the height of the third part 247C.

[0044] exist Figure 2C In a fourth embodiment, the RF structure 248 may include a first portion 248A separated from a second portion 248B by a portion 249 of the glass core 240. Both the first portion 248A and the second portion 248B may include a conductive material (e.g., copper). In other embodiments, one or both of the first portion 248A and the second portion 248B may include a dielectric material. When both the first portion 248A and the second portion 248B include dielectric materials, the dielectric materials may be the same, or the dielectric materials may be different. Although not in direct contact with each other, the first portion 248A and the second portion 248B may still be considered to be vertically stacked because the centerlines of the first portion 248A and the second portion 248B may substantially coincide with each other. In the illustrated embodiment, the first portion 248A and the second portion 248B have similar heights. However, in other embodiments, the first portion 248A and the second portion 248B may have different heights.

[0045] Now refer to Figure 2D , shows a cross-sectional view of a portion of the packaging substrate 200 according to additional embodiments. In an embodiment, the first RF structure 255 includes a single dielectric material. That is, the RF structures described herein do not necessarily need to include a conductive material. The use of a completely dielectric RF structure (e.g., RF structure 255) can be suitable for tuning the dielectric constant of specific areas of the glass core 240 to improve wireless RF transmission characteristics (e.g., by improving the filtering process, optimizing the directionality of signal propagation, etc.). In an embodiment, the dielectric constant of the RF structure 255 is different from the dielectric constant of the glass core 240. In some embodiments, the dielectric RF structure 255 can have a controllable impedance and / or loss, which enables the use of the RF structure 255 as an impedance load and / or attenuator.

[0046] In another embodiment, the RF structure 256 can be provided as a fully dielectric structure including a first portion 256A and a second portion 256B. The first portion 256A and the second portion 256B can include different dielectric materials. In some embodiments, one or both of the first portion 256A and the second portion 256B can have a dielectric constant that is different from the dielectric constant of the glass core 240. As shown, the first portion 256A and the second portion 256B have different heights. In other embodiments, the first portion 256A and the second portion 256B can have the same height.

[0047] Now refer to Figure 2E , shows a cross-sectional view of a portion of a package substrate 200 according to yet another embodiment. In an embodiment, the RF structures 251 - 253 may have more than three portions.

[0048] exist Figure 2E In a first embodiment, the RF structure 251 includes four parts 251A-251D. The first part 251A can be a dielectric material, and the second part 251B can be a conductive material (e.g., copper). The second part 251B can be vertically stacked with the first part 251A and directly contact the first part 251A. In an embodiment, the third part 251C can be vertically stacked with the second part 251B, and the third part 251C is separated from the second part 251B by part 249 of the glass core 240. The fourth part 251D can be a dielectric material vertically stacked with the third part 251C and directly contacting the third part 251C. In the illustrated embodiment, the first part 251A and the second part 251B are mirror images of the third part 251C and the fourth part 251D, respectively. In other embodiments, one or both of the heights of the lower part 251A and the lower part 251B can be different from one or both of the heights of the upper part 251C and the upper part 251D.

[0049] exist Figure 2E In the second embodiment, the RF structure 252 includes five portions 252A-252E. The RF structure 252 can be similar to the RF structure 521, except that a dielectric portion 252C is present between the lower portions 252A / 252B and the upper portions 252D / 252E.

[0050] exist Figure 2EIn the third embodiment, RF structure 253 includes five portions 253A-253E. In some instances, RF structure 253 may be the inverse of RF structure 252. That is, first portion 253A, third portion 253C, and fifth portion 253E may be made of a conductive material (e.g., copper), while second portion 253B and fourth portion 253D may be made of a dielectric material. In the illustrated embodiment, first portion 253A is electrically coupled to layer 205A, fifth portion 253E is electrically coupled to layer 205B, and third portion 253C is electrically floating. In other embodiments, one or both of first portion 253A and fifth portion 253E may be electrically floating.

[0051] Now refer to Figure 3A and Figure 3B , shows a cross-sectional view of a portion of a packaging substrate 300 according to various embodiments. In the illustrated embodiment, packaging substrate 300 includes a glass core 340, which can be similar to any of the glass cores described in more detail herein. Packaging substrate 300 can also include conductive layers 305A and 305B above and below glass core 340. Dielectric layers 341 and 342 can separate conductive layers 305A and 305B from glass core 340.

[0052] Now refer to Figure 3A , shows a cross-sectional view of a portion of a packaging substrate 300 according to an embodiment. In an embodiment, the packaging substrate 300 includes a first RF system 355 and a second RF system 356. In an embodiment, the first RF system 355 may include a plurality of adjacent RF structures 357-360. In an embodiment, the RF structures 357-360 include decreasing heights (from left to right). The RF structure 357 may be electrically coupled to the conductive layer 305A and the conductive layer 305B. That is, the height of the RF structure 357 may be greater than the thickness of the glass core 340. The remaining RF structures 358-360 may be blind RF structures having a height less than the thickness of the glass core 340. In the illustrated embodiment, all of the RF structures 358-360 are electrically coupled to the conductive layer 305A. However, one or more of the RF structures 358-360 may be electrically floating. Although four RF structures 357-360 are shown in the first RF system 355, it should be understood that any number of RF structures may be included in the first RF system 355.

[0053] In an embodiment, the second RF system 356 can be similar to the first RF system 355, but with the addition of a dielectric portion having a height less than the thickness of the glass core 340 above the RF structure. For example, the RF structure 361 can be similar to the RF structure 357, while the RF structures 362-364 can each include two portions. For example, the first portions 362A-364A can be a conductive material (e.g., copper), and the upper second portions 362B-364B can be a dielectric material. In an embodiment, the combined height of the two portions of the RF structures 362-364 can be substantially equal to the thickness of the glass core 340.

[0054] Now refer to Figure 3B , shows a cross-sectional view of a portion of a package substrate 300 according to an embodiment, and shows a first RF system 365 and a second RF system 366. In the first RF system 365, each RF structure 367-369 includes three parts. The lower part 367A-369A and the upper part 367C-369C may include a conductive material (e.g., copper). The middle part 367B-369B may include a dielectric material. In an embodiment, the first RF system 365 may include RF structures 367-369, wherein the middle part 367B-369B decreases in height. Although three RF structures 367-369 are shown in the first RF system 365, it should be understood that any number of RF structures may be included in the first RF system 365.

[0055] The second RF system 366 may be a reverse of the first RF system 365. That is, the lower portions 370A-372A and the upper portions 370C-372C may include dielectric materials, and the middle portions 370B-372B may include conductive materials (e.g., copper). In an embodiment, the second RF system 366 may include RF structures 370-372, wherein the middle portions 370B-372B decrease in height. Although three RF structures 370-372 are shown in the second RF system 366, it should be understood that any number of RF structures may be included in the second RF system 366.

[0056] Now refer to Figure 4, shows a cross-sectional view of a portion of a packaging substrate 400 according to additional embodiments. In the illustrated embodiment, packaging substrate 400 includes a multi-layer glass core 440. For example, a first glass layer 440A and a second glass layer 440B can be stacked and have an interface 407. Glass layers 440A and 440B can be similar to any of the glass cores described in more detail herein. Packaging substrate 400 can also include conductive layers 405A and 405B above and below glass core 440. Dielectric layers 441 and 442 can separate conductive layers 405A and 405B from glass core 440.

[0057] In an embodiment, the package substrate 400 may include any number of RF structures 445 or RF structures 446 at least partially embedded within one or both of the first glass layer 440A or the second glass layer 440B. For example, the RF structures 445A and RF structures 446A may extend upward from the bottom of the first glass layer 440A and into the second glass layer 440B. Conversely, the RF structures 445B and RF structures 446B may extend downward from the top of the second glass layer 440B and into the first glass layer 440A. Furthermore, while the RF structures 445 and RF structures 446 may all completely pass through at least one of the glass layers 440A or 440B, in some embodiments, the RF structures may only be present in one of the glass layers 440A or 440B. Figure 4 Several examples of RF structures are shown (e.g., RF structure 445A and RF structure 445B electrically coupled to conductive layer 405A or conductive layer 405B, and floating RF structure 446A and floating RF structure 446B). However, it should be understood that any of the RF structures described in more detail herein can be integrated into a multi-layer glass core.

[0058] Now refer to Figure 5 , shows a cross-sectional view of a portion of a packaging substrate 500 according to an embodiment, illustrating some RF communication coupling options. In the illustrated embodiment, packaging substrate 500 includes a glass core 540, which can be similar to any of the glass cores described in more detail herein. Packaging substrate 500 can also include conductive layers 505A and 505B above and below glass core 540. Dielectric layers 541 and 542 can separate conductive layers 505A and 505B from glass core 540.

[0059] In an embodiment, the first RF structure 545 is provided near the edge surface of the glass core 540. For example, the edge surface of the first RF structure 545 can be within 100 μm of the edge surface of the glass core 540, within 50 μm of the edge surface of the glass core 540, within 20 μm of the edge surface of the glass core 540, within 5 μm of the edge surface of the glass core 540, or within 1 μm of the edge surface of the glass core 540. Being near the edge surface of the glass core 540 can enable wireless communication coupling (indicated by wave 511) with a component 515 external to the packaging substrate 500. For example, the component 515 can be a separate packaging substrate (which can be on the same board as the packaging substrate 500 or external to the board of the packaging substrate 500). In an embodiment, the component 515 can also be a tube die, a board component, or any other device.

[0060] Although component 515 is shown as being external to package substrate 500, other embodiments may include component 515 integrated as part of package substrate 500. For example, component 515 may be embedded within a build-up layer (not shown) of package substrate 500, embedded within glass core 540, or coupled to a top or bottom surface of the package substrate.

[0061] In an embodiment, the second RF structure 546 can be wirelessly coupled (indicated by wave 512) to the third RF structure 547. In the illustrated embodiment, the second RF structure 546 and the third RF structure 547 are in close proximity to each other. However, in other embodiments, the second RF structure 546 and the third RF structure 547 can be spaced apart. In some instances, one or more other structures (e.g., vias, RF structures, etc.) can be provided in the path between the second RF structure 546 and the third RF structure 547. In some embodiments, the second RF structure 546 and the third RF structure 547 can be different parts of a single RF antenna, such as an RF patch antenna.

[0062] Depend on Figure 5 The use of wireless communication coupling provided by the RF structure allows for a reduction in wiring complexity within the package substrate 500. In addition, a low quality factor (Q) RF structure can be used to improve data transmission rates between locations on the package substrate 500 (or between the package substrate 500 and external components 515) compared to using wired (e.g., copper) interconnects.

[0063] Now refer to Figures 6A-6C , shows a series of plan views depicting RF systems that can be integrated into a glass core according to an embodiment. In the illustrated embodiment, a bottom ground plane 671 and a top ground plane 672 are shown. A glass core (not shown) similar to any of the glass cores described in more detail herein can be provided between the bottom ground plane 671 and the top ground plane 672.

[0064] Now refer to Figure 6A , shows a plan view of an RF system 670 as an open waveguide antenna according to an embodiment. As shown, multiple through-glass vias (TGVs) 675 can form a U-shape around the driven RF structure 645. The TGVs 675 can be standard TGVs that pass through the entire thickness of the glass core (not shown) and contact both the bottom ground plane 671 and the top ground plane 672. The driven RF structure 645 can be a blind RF structure 645 similar to any of the RF structures described in more detail herein. For example, the conductive portion of the driven RF structure 645 can have a height less than the thickness of the glass core. In an embodiment, the driven RF structure 645 can be electrically isolated from the top ground plane 672 (e.g., by an insulator) or by providing holes through the top ground plane 672 around the driven RF structure 645 to electrically isolate the top ground plane 672. The driven RF structure 645 can be electrically coupled to an RF signal source.

[0065] Now refer to Figure 6B , shows a plan view of an RF system 670 as a corner reflector antenna according to an embodiment. As shown, multiple TGVs 675 can form a V-shape around a driven RF structure 645. The TGV 675 can be a standard TGV that passes through the entire thickness of a glass core (not shown) and contacts both a bottom ground plane 671 and a top ground plane 672. The driven RF structure 645 can be a blind RF structure 645 similar to any of the RF structures described in more detail herein. For example, the conductive portion of the driven RF structure 645 can have a height less than the thickness of the glass core. In an embodiment, the driven RF structure 645 can be electrically isolated from the top ground plane 672 (e.g., by an insulator) or by providing a hole through the top ground plane 672 around the driven RF structure 645 to electrically isolate the top ground plane 672. The driven RF structure 645 can be electrically coupled to an RF signal source.

[0066] Now refer to Figure 6C, shows a plan view of an RF system 670 configured as a Yagi antenna according to an embodiment. As shown, a reflective TGV 676 can be provided on one side of a driven RF structure 645, and a plurality of guide TGVs 678 can be provided on the side of the driven RF structure 645 opposite the reflective TGV 676. The reflective TGV 676 and the guide TGV 678 can be blind TGVs that only partially penetrate the entire thickness of a glass core (not shown). That is, the TGVs 676 and TGV 678 can only contact the top ground plane 672. The driven RF structure 645 can also be a blind RF structure 645 similar to any of the RF structures described in more detail herein. For example, the conductive portion of the driven RF structure 645 can have a height less than the thickness of the glass core. In embodiments, the driven RF structure 645 can be electrically isolated from the top ground plane 672 (e.g., by an insulator) or by providing holes around the driven RF structure 645 that penetrate the top ground plane 672. The driven RF structure 645 may be electrically coupled to an RF signal source.

[0067] Figures 6A-6C Examples of RF antenna systems formed with the RF structures described herein are provided according to various embodiments. However, it should be understood that many different antenna systems can be made by various combinations and arrangements of RF structures similar to the RF structures described herein. In addition, although antenna structures for propagating and / or receiving wireless RF signals are shown, it should be understood that the RF system can also include a filtering system. Embodiments can also include RF systems that include waveguide structures (e.g., parallel plate waveguides, dielectric waveguides, substrate integrated waveguides) and / or passive RF structures (e.g., power dividers / combiners, phase shifters, impedance loads (R / L / C) or attenuators).

[0068] Now refer to Figure 7 , shows a perspective view of a glass module 780 according to an embodiment. In an embodiment, the glass module 780 may include a piece of glass 781 (a single-layer glass sheet or a multi-layer glass sheet) having a composition similar to the glass core described in more detail herein. However, instead of being the entire package substrate core, the glass module 780 may be a smaller component suitable for integration into other parts of the package substrate (not shown). For example, the glass module 780 may be embedded in a building layer of the package substrate, or provided above the package substrate. The glass module 780 can be made in a panel form factor using a process similar to the process used to make the glass core (which will be described in more detail herein). After production, the glass module 780 can be singulated from the panel and used elsewhere.

[0069] In an embodiment, one or more RF structures 745 (in Figure 7781. The RF structure 745 can be similar to one or more of the RF structures described in more detail herein. In an embodiment, the RF structure 745 can include a conductive portion having a height H that is less than the thickness T of the piece of glass 781.

[0070] Now refer to Figures 8A-8L , shows a series of cross-sectional views depicting a process for forming an RF structure similar to one or more of the RF structures described in more detail herein, according to an embodiment. Figures 8A-8L Several specific examples of different RF structures are shown in the figures, but it should be understood that any of the RF structures described herein can be made using similar operations (which may include adding one or more additional patterning cycles, eliminating one or more patterning cycles, depositing different dielectric materials, changing the etch depth for one or more of the patterning cycles, etc.).

[0071] Now refer to Figure 8A , shows a cross-sectional view of a portion of a package substrate 800 at a stage of fabrication according to an embodiment. In particular, an unpatterned glass core 840 is shown. Glass core 840 can be similar to any of the glass cores described in more detail herein.

[0072] Now refer to Figure 8B , shows a cross-sectional view of a portion of a package substrate 800 after a via opening operation according to an embodiment. In an embodiment, the via opening 831 can completely pass through the thickness of the glass core 840. The via opening 832 can partially pass through the thickness of the glass core 840. With respect to the via openings 832, each via opening 832 is vertically stacked above the via opening 832 on the other side of the glass core 840. However, in other embodiments, one or more of the via openings 832 may not be vertically stacked. As used herein, the via opening 831 and / or the via opening 832 may also be referred to as a hole.

[0073] In the illustrated embodiment, the sidewalls 833 of the via opening 831 and the via opening 832 can be inclined. For example, the via opening 831 can have sidewalls 833 that are inclined to form an hourglass-shaped cross-section, and the via opening 832 can have sidewalls 833 that converge to a point at the bottom of the via opening 832. The inclined profile of the sidewalls 833 can be a characteristic feature of the laser-assisted etching process. For example, the laser can be used to modify the microstructure and / or chemical structure of the glass in the glass core 840. The modified glass area may be more susceptible to the effects of a given etching chemistry used to form the via opening 831 and the via opening 832. The depth of the via opening 831 and the via opening 832 can be controlled by controlling the amount of laser at different locations. Accordingly, a via opening 832 having a specific depth into the thickness of the glass core 840 (but not completely through the thickness of the glass core 840) can be selected to set the desired dimensions of the resulting RF structure. Accordingly, optimization of RF characteristics (eg, quality factor, center frequency, etc.) may be achieved for a wide range of RF structures.

[0074] Although Figures 8A-8L 833, but substantially vertical sidewalls may also be provided in some embodiments. In addition, while the previous embodiments depict substantially vertical sidewalls, any of the embodiments described herein may be provided with sidewalls similar to those in FIG. Figures 8A-8L That is, any RF structure disclosed herein may include inclined sidewalls forming a tapered cross-section (with or without a point) or an hourglass-shaped cross-section.

[0075] Now refer to Figure 8C , shows a cross-sectional view of a portion of a package substrate 800 after metallizing via openings 831 and 832 according to an embodiment. The metallization features may include an RF structure 845 (which completely passes through the thickness of the glass core 840) and an RF structure 846 (which partially passes through the thickness of the glass core 840). The metallization process may be a plating process (e.g., electroplating) or any other suitable deposition process (e.g., physical vapor deposition (PVD), chemical vapor deposition (CVD), etc.). Any excess deposition above or below the glass core 840 may be polished back (e.g., using a chemical mechanical polishing (CMP) process).

[0076] Now refer to Figure 8D , shows a cross-sectional view of a portion of a package substrate 800 after depositing and patterning a first resist layer 820 to form an opening 821, according to an embodiment. As shown, the opening 821 can be formed over one or more of the RF structure 845 and / or the RF structure 846. The first resist layer 820 can be provided over both the top and bottom of the glass core 840.

[0077] Now refer to Figure 8E , shows a cross-sectional view of a portion of the package substrate 800 after a first etching process according to an embodiment. The first etching process may recess the surfaces of the exposed RF structures 845B, 845C, and 846B. The RF structures 845A and 846A may be completely covered by the resist layer 820 and will not be recessed.

[0078] Now refer to Figure 8F , shows a cross-sectional view of a portion of a package substrate 800 after removing the first resist layer 820 according to an embodiment. In an embodiment, the first resist layer 820 can be removed using a resist stripping process or the like.

[0079] Now refer to Figure 8G , shows a cross-sectional view of a portion of a package substrate 800 after depositing and patterning a second resist layer 822 to form an opening 823 according to an embodiment. In some embodiments, the second resist layer 822 can be provided both above and below the glass core 840. In an embodiment, the opening 823 can be provided before Figure 8E That is, some surfaces that have been recessed once can be recessed again. This enables the formation of multiple RF structures of different heights within the same glass core 840. Alternatively, the RF structures can be completely removed using a subsequent etching process. Figure 8G Although a dual etching process is described herein, it should be understood that a single etching cycle can be used, or multiple etching cycles can be used, to provide RF structures with any number of different heights within a single glass core 840.

[0080] Now refer to Figure 8H , shows a cross-sectional view of a portion of the package substrate 800 after a second etching process according to an embodiment. In the illustrated embodiment, the second etching process is a cleanup process that completely removes the RF structure from the via opening. For example, Figure 8H One via opening 831 of the via openings 831 and two via openings 832 of the via openings 832 are cleared.

[0081] Now refer to Figure 8I , shows a cross-sectional view of a portion of the package substrate 800 after removing the second resist layer 822 according to an embodiment. In an embodiment, the second resist layer 822 can be removed using a resist stripping process or the like.

[0082] Now refer to Figure 8J, shows a cross-sectional view of a portion of package substrate 800 after dielectric plugs 847, 848, 849, and 850 are added to the exposed portions of the via openings in accordance with an embodiment. For example, dielectric plug 847 is provided over the top surface of RF structure 845B, a pair of dielectric plugs 847 are provided above and below RF structure 845C, dielectric plug 848 is provided in completely empty via opening 831, dielectric plug 849 is provided in each of completely empty via openings 832, and dielectric plug 850 is provided over RF structure 846B.

[0083] It should be understood that because the plugs 847-850 and the corresponding RF structures are filled in the same via openings, the plugs and the RF structures will have substantially coincident centerlines. Therefore, the plugs and the corresponding RF structures will be considered to be vertically stacked.

[0084] The dielectric material for plugs 847-850 can be deposited using a molding process, a lamination process, or any other deposition process. Any excess deposition can be removed using a CMP process, etc. In the illustrated embodiment, all plugs 847-850 are the same material. In other embodiments, different dielectric materials can be provided on different RF structures by providing multiple cycles of mask and plug deposition processes.

[0085] Now refer to Figure 8K , shows a cross-sectional view of a portion of a package substrate 800 after providing dielectric layers 841 and 842 over a glass core 840 and patterning the dielectric layers 841 and 842 to form openings 843, according to an embodiment. For example, the dielectric layers 841 and 842 can be deposited using a lamination process, etc. In an embodiment, the openings 843 can be formed using a laser patterning process, a chemical etching process, etc.

[0086] Now refer to Figure 8L , shows a cross-sectional view of a portion of package substrate 800 after metal layers 805A and 805B are added over dielectric layers 841 and 842, in accordance with an embodiment. The deposition of metal layers 805A and 805B may also fill openings 843 to form vias 808 to provide electrical contact to one or more of RF structures 845 and / or RF structures 846. Metal layers 805A and 805B may also be patterned to provide electrical isolation where necessary.

[0087] Now refer to Figure 9 , shows a process flow diagram of a process 980 for forming an RF structure in a glass core according to an embodiment. In an embodiment, the process 980 may be similar to the process described above with respect to Figures 8A-8L(or elsewhere herein) to provide an RF structure in accordance with any of the RF structures described in more detail herein.

[0088] In an embodiment, process 980 may begin with operation 981, which includes forming a via opening through the thickness of a glass substrate. In an embodiment, the via opening may be formed using a laser-assisted patterning process.

[0089] In an embodiment, process 980 may continue to operation 982, which includes depositing a via in the via opening. In an embodiment, the via may be a conductive via deposited using any suitable process. The via may be planarized so that the surface is substantially coplanar with the top and bottom of the glass substrate.

[0090] In an embodiment, process 980 may proceed to operation 983, which includes recessing one or both ends of the via. The recessing may be performed by depositing a resist layer on the top and bottom surfaces of the glass substrate. An opening is then formed through the resist layer over one or both ends of the via to be recessed. An etchant is then used to selectively recess the exposed ends of the via.

[0091] In an embodiment, process 980 may continue to operation 984, which includes depositing plugs above and / or below the via within the via opening. The plugs may be a dielectric material provided using any suitable deposition process. In embodiments having recessed top and bottom surfaces, the top plug may be a different dielectric material than the bottom plug.

[0092] In an embodiment, process 980 may continue to operation 985, which may include electrically coupling the via to a trace above and / or below the glass substrate. The trace may be separated from the glass substrate by a dielectric layer. In such an embodiment, the via may be provided through the dielectric layer to electrically couple the via to the trace. Although electrical coupling to the trace is described in operation 985, it should be understood that the embodiment may terminate after operation 984. That is, the via that is recessed and formed into a plug may be electrically floating.

[0093] Now refer to Figure 10 , shows a cross-sectional view of an electronic system 1090 according to an embodiment. The electronic system 1090 may include a board 1091, such as a printed circuit board (PCB), a motherboard, etc. The board 1091 may be coupled to the package substrate 1000 via a second level interconnect (SLI) 1092. The SLI 1092 may include solder joints, pins, sockets, etc.

[0094] In an embodiment, package substrate 1000 can be similar to any of the package substrates described in more detail herein. For example, package substrate 1000 can include a glass core 1040 having build-up layers 1030 above and below the glass core 1040. In an embodiment, glass core 1040 can include any number of RF structures 1045 or RF structures 1046 similar to any of the embodiments described in more detail herein. For example, RF structure 1045 can include a conductive first region 1045A having a height less than the thickness of glass core 1040, and a dielectric plug second region 1045B. RF structure 1046 can include a conductive first region 1046A and a dielectric plug second region 1046B.

[0095] In an embodiment, one or more dies 1095 may be electrically coupled to the package substrate 1000 via a first level interconnect (FLI) 1094. The FLI 1094 may include solder bumps, copper bumps, a hybrid bonding interface, etc. In an embodiment, the die 1095 may be any type of die, such as a central processing unit (CPU), a graphics processing unit (GPU), an XPU, a communication die, a memory die, etc.

[0096] In an embodiment, RF structures 1045 and / or RF structures 1046 may be used to provide wireless communication coupling between components within electronic system 1090. For example, one or more of RF structures 1045 and / or RF structures 1046 may be wirelessly coupled to one or more of die 1095, a different RF structure 1045 and / or RF structure 1046, and / or any other components in electronic system 1090. Additionally, one or more of RF structures 1045 and / or RF structures 1046 may be wirelessly coupled to one or more components external to electronic system 1090.

[0097] Figure 11 A computing device 1100 according to one embodiment of the present disclosure is shown. Computing device 1100 houses a board 1102. Board 1102 can include multiple components, including, but not limited to, a processor 1104 and at least one communication chip 1106. Processor 1104 is physically and electrically coupled to board 1102. In some embodiments, at least one communication chip 1106 is also physically and electrically coupled to board 1102. In other embodiments, communication chip 1106 is part of processor 1104.

[0098] These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, graphics processors, digital signal processors, cryptographic processors, chipsets, antennas, displays, touch screen displays, touch screen controllers, batteries, audio codecs, video codecs, power amplifiers, Global Positioning System (GPS) devices, compasses, accelerometers, gyroscopes, speakers, cameras, and mass storage devices (e.g., hard drives, compact disks (CDs), digital versatile disks (DVDs), etc.).

[0099] The communication chip 1106 implements wireless communications for transmitting data to and from the computing device 1100. The term "wireless" and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communication channels, and the like that can transmit data over a non-solid medium using modulated electromagnetic radiation. The term does not imply that the associated devices do not contain any wires, although in some embodiments they may not. The communication chip 1106 may implement any of several wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 series), WiMAX (IEEE 802.16 series), IEEE 802.20, Long Term Evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, their derivatives, and any other wireless protocols designated as 3G, 4G, 5G, and higher. The computing device 1100 may include multiple communication chips 1106. For example, the first communication chip 1106 may be dedicated to shorter-range wireless communications, such as Wi-Fi and Bluetooth, and the second communication chip 1106 may be dedicated to longer-range wireless communications, such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, EV-DO, and others.

[0100] The processor 1104 of the computing device 1100 includes an integrated circuit die encapsulated within the processor 1104. In some embodiments of the present disclosure, the integrated circuit die of the processor may be part of an electronic package that includes a glass core with embedded RF structures according to embodiments described herein, the embedded RF structures having one or more portions with a height less than the thickness of the glass core. The term "processor" may refer to any device or portion of a device that processes electronic data from registers and / or memory to transform the electronic data into other electronic data that can be stored in registers and / or memory.

[0101] The communication chip 1106 also includes an integrated circuit die encapsulated within the communication chip 1106. According to another embodiment of the present disclosure, the integrated circuit die of the communication chip can be part of an electronic package that includes a glass core according to embodiments described herein with embedded RF structures, the embedded RF structures having one or more portions having a height less than a thickness of the glass core.

[0102] In embodiments, the computing device 1100 may be part of any device. For example, the computing device may be part of a personal computer, a server, a mobile device, a tablet computer, an automobile, etc. That is, the computing device 1100 is not limited to use in any particular type of system, and the computing device 1100 may be included in any device that may benefit from computing functionality.

[0103] The above description of the illustrated embodiments of the present disclosure, including what is described in the Abstract, is not intended to be exhaustive or to limit the disclosure to the precise forms disclosed. Although specific embodiments and examples of the present disclosure are described herein for illustrative purposes, those skilled in the relevant art will recognize that various equivalent modifications are possible within the scope of the present disclosure.

[0104] These modifications may be made to the present disclosure in light of the above-described detailed description. The terms used in the following claims should not be construed to limit the present disclosure to the specific embodiments disclosed in the specification and claims. Rather, the scope of the present disclosure is to be determined entirely by the following claims, which are to be construed in accordance with established doctrines of claim interpretation.

[0105] Example 1: A device comprising: a substrate, wherein the substrate is an amorphous glass layer; a hole extending into the substrate; and a structure in the hole, wherein the structure comprises: a first portion comprising a first material component; and a second portion comprising a second material component, wherein the first portion and the second portion are vertically stacked within the hole.

[0106] Example 2: The apparatus of Example 1, wherein the first portion has a first height and the second portion has a second height, and wherein the first height is different from the second height.

[0107] Example 3: The device of Example 1 or Example 2, wherein the first material composition comprises a conductive material and the second material composition comprises a dielectric material.

[0108] Example 4: The apparatus of Example 3, wherein the substrate has a first dielectric constant and the second material composition has a second dielectric constant, and wherein the first dielectric constant is different from the second dielectric constant.

[0109] Example 5: The apparatus of Examples 1-4, wherein the structure further comprises: a third portion, wherein the second portion is between the first portion and the third portion, and wherein the third portion comprises the first material composition.

[0110] Example 6: The device of Examples 1-5, wherein the hole extends completely through the thickness of the substrate.

[0111] Example 7: The device of Examples 1-6, wherein the depth of the hole is less than the thickness of the substrate.

[0112] Example 8: The device of Examples 1-7 further includes: a second hole adjacent to the hole and extending into the substrate; and a second structure in the second hole, wherein the second structure includes: a third portion comprising a first material component; and a fourth portion comprising a second material component, wherein the third portion and the fourth portion are vertically stacked within the second hole.

[0113] Example 9: The device of Example 8, wherein the height of the third portion is different from the height of the first portion.

[0114] Example 10: The apparatus of Examples 1-9, wherein the structure is an antenna structure, a filter, a waveguide structure, and / or a passive RF structure.

[0115] Example 11: A device comprising: a substrate, wherein the substrate is an amorphous glass layer; a first layer above the substrate, wherein the first layer is conductive; a second layer below the substrate, wherein the second layer is conductive; and a radio frequency (RF) system at least partially embedded in the substrate, wherein the RF system comprises: a first via into the substrate, wherein a height of the first via is less than a thickness of the substrate, and wherein the first via is electrically coupled to an RF signal source; and a plurality of second vias into the substrate, wherein the plurality of second vias are electrically coupled to one or both of the first layer and the second layer.

[0116] Example 12: The device of Example 11, wherein the RF system is an antenna.

[0117] Example 13: The device of Example 12, wherein the antenna is an open waveguide antenna, a corner reflector antenna, or a Yagi antenna.

[0118] Example 14: The apparatus of Examples 11-13, wherein the RF system is a filter, a waveguide structure, and / or a passive RF structure.

[0119] Example 15: The apparatus of Examples 11-14, wherein the first via is in a hole through the entire thickness of the substrate, wherein the plug fills a portion of the hole, and wherein the plug is a dielectric material.

[0120] Example 16: The device of Examples 11-15, wherein the first layer and the second layer are configured to be grounded.

[0121] Example 17: The device of Examples 11-16, wherein the first via is within 100 μm of an edge of the substrate.

[0122] Example 18: The apparatus of Examples 11-17, further comprising: a first dielectric layer above the substrate; a second dielectric layer below the substrate; a plate coupled to the second dielectric layer; and a die coupled to the first dielectric layer.

[0123] Example 19: A device comprising: a substrate, wherein the substrate is a glass layer; a first radio frequency (RF) antenna portion embedded in the substrate, wherein the first RF antenna portion is electrically coupled to a conductive trace above or below the substrate; and a second RF antenna portion embedded in the substrate, wherein the second RF antenna portion is electrically floating and wherein the first RF antenna portion is configured to be communicatively coupled to the second RF antenna portion.

[0124] Example 20: The device of Example 19, wherein the first RF antenna portion includes a conductive via portion and a dielectric plug portion over the conductive via portion.

Claims

1. A device comprising: a substrate, wherein the substrate is an amorphous glass layer; a hole into the substrate; and The structure in the hole, wherein the structure comprises: a first portion comprising a first material composition; and A second portion includes a second material composition, wherein the first portion and the second portion are vertically stacked within the aperture.

2. The device according to claim 1, wherein The first portion has a first height and the second portion has a second height, and wherein the first height is different from the second height.

3. The device according to claim 1 or 2, wherein: The first material composition includes a conductive material, and the second material composition includes a dielectric material.

4. The device according to claim 3, wherein The substrate has a first dielectric constant and the second material composition has a second dielectric constant, and wherein the first dielectric constant is different from the second dielectric constant.

5. The device according to claim 1 or 2, wherein: The structure further comprises: A third portion, wherein the second portion is between the first portion and the third portion, and wherein the third portion includes the first material composition.

6. The device according to claim 1 or 2, wherein: The holes extend completely through the thickness of the substrate.

7. The apparatus according to claim 1 or 2, wherein: The depth of the hole is smaller than the thickness of the substrate.

8. The apparatus according to claim 1 or 2, further comprising: a second hole into the substrate adjacent to the hole; as well as a second structure in the second hole, wherein the second structure comprises: a third portion comprising said first material composition; and A fourth portion includes the second material composition, wherein the third portion and the fourth portion are vertically stacked within the second aperture.

9. The apparatus according to claim 8, wherein The height of the third portion is different from the height of the first portion.

10. The apparatus according to claim 1 or 2, wherein: The structure is an antenna structure, a filter, a waveguide structure and / or a passive RF structure.

11. A device comprising: a substrate, wherein the substrate is an amorphous glass layer; a first layer on the substrate, wherein the first layer is conductive; a second layer below the substrate, wherein the second layer is conductive; and a radio frequency (RF) system at least partially embedded within the substrate, wherein the RF system comprises: a first via into the substrate, wherein a height of the first via is less than a thickness of the substrate, and wherein the first via is electrically coupled to an RF signal source; and A plurality of second vias are provided into the substrate, wherein the plurality of second vias are each electrically coupled to one or both of the first layer and the second layer.

12. The apparatus according to claim 11, wherein The RF system is an antenna.

13. The apparatus according to claim 12, wherein The antenna is an open waveguide antenna, a corner reflector antenna or a Yagi antenna.

14. The apparatus of claim 11, 12 or 13, wherein: The RF system is a filter, a waveguide structure and / or a passive RF structure.

15. The apparatus of claim 11, 12 or 13, wherein The first via is in a hole through the entire thickness of the substrate, wherein a plug fills a portion of the hole, and wherein the plug is a dielectric material.

16. The apparatus of claim 11, 12 or 13, wherein: The first layer and the second layer are configured to be grounded.

17. The apparatus of claim 11, 12 or 13, wherein: The first via hole is within 100 μm of an edge of the substrate.

18. The apparatus of claim 11, 12 or 13, further comprising: a first dielectric layer over the substrate; a second dielectric layer below the substrate; a plate coupled to the second dielectric layer; as well as A die is coupled to the first dielectric layer.

19. A device comprising: a substrate, wherein the substrate is a glass layer; a first radio frequency (RF) antenna portion embedded in the substrate, wherein the first RF antenna portion is electrically coupled to a conductive trace on or below the substrate; and A second RF antenna portion is embedded in the substrate, wherein the second RF antenna portion is electrically floating, and wherein the first RF antenna portion is configured to be communicatively coupled to the second RF antenna portion.

20. The apparatus according to claim 19, wherein The first RF antenna portion includes a conductive via portion and a dielectric plug portion over the conductive via portion.

Images