Power device

Abstract

A power device comprises a power switch circuit, a driver, a regulator, at least one power taking circuit, a first pin, a second pin and a third pin. And the driver controls the power switch circuit to connect or disconnect the first pin and the second pin according to a signal on the third pin. And the at least one power taking circuit obtains voltage from the first pin, the third pin and / or the power switch circuit. The regulator converts the voltage provided by the at least one power taking circuit into a proper voltage and provides the proper voltage to a power supply end of the driver. Since the power supply required by the driver can be obtained from the inside of the power device, the power supply can be obtained from the outside of the power device without adding additional pins.

Description

Technical Field

[0001] The present invention relates to a power device, in particular to a power device using a GaN transistor and having only three pins. Background Art

[0002] Traditional power devices are based on metal oxide semiconductor field effect transistors (MOSFETs). As technology advances, electronic devices require increasingly higher voltages and operating frequencies, making traditional MOSFETs incapable of meeting these demands. To increase response speed, reduce size, and improve efficiency, power devices using gallium nitride (GaN) transistors have been proposed.

[0003] Figure 1 The power device 100 currently uses GaN transistors and includes a regulator 102, a driver 104, a power switching circuit 106, and four pins 108 to 114. The regulator 102 receives a voltage Vp1 from outside the power device 100 via pin 108, converts the voltage Vp1 to a voltage Vp2, and provides it to one of the two power supply terminals of the driver 104. The other power supply terminal of the driver 104 receives a voltage VL via pin 114. Voltage VL is typically 0V. The power switching circuit 106 includes at least one GaN transistor (not shown) connected between pins 112 and 114. The driver 104 controls the power switching circuit 106 to connect pin 112 to pin 114 or disconnect pins 112 and 114 based on an input signal Vin at pin 110. Specifically, when the input signal Vin is at a first level (e.g., a high level), the driver 104 controls the power switch circuit 106 to turn on, thereby connecting the pin 112 to the pin 114. When the input signal Vin is at a second level (e.g., a low level), the driver 104 controls the power switch circuit 106 to turn off, thereby disconnecting the pins 112 and 114.

[0004] Compared to MOSFETs, GaN transistors can withstand high voltages and offer higher operating frequencies. However, GaN transistors require a driver 104 to drive them, and driver 104 requires an additional power supply voltage (i.e., voltage V2) to operate. Therefore, compared to power devices using MOSFETs, power device 100 requires an additional pin 108 to obtain the power supply voltage required by driver 104. In other words, current power devices using GaN transistors require at least four pins 108-114, which hinders the direct replacement of power devices using MOSFETs with power devices using GaN transistors in power electronics topology. Summary of the Invention

[0005] One of the objectives of the present invention is to provide a power device using GaN transistors and having only three pins.

[0006] According to a first aspect of the present invention, a power device is provided, comprising a first pin, a second pin, a third pin, a power switching circuit, a driver, a first power supply circuit, and a regulator. The power switching circuit is configured to connect the first pin to the second pin, or to disconnect the first pin from the second pin. The driver controls the power switching circuit to connect or disconnect the first pin from the second pin based on a signal on the third pin. The first power supply circuit is configured to obtain a first voltage from the first pin to generate a second voltage. The regulator is configured to convert the second voltage into a third voltage and provide the third voltage to a power supply terminal of the driver.

[0007] Optionally, the first power supply circuit includes a junction field effect transistor having an input terminal, an output terminal and a control terminal, wherein the input terminal is connected to the first pin, the output terminal is connected to the regulator, and the control terminal is connected to the second pin or a preset voltage source.

[0008] Optionally, the power device further includes a second power-taking circuit connected to the third pin and the regulator, for obtaining a fourth voltage from the third pin to generate a fifth voltage, wherein the regulator converts the fifth voltage into the third voltage.

[0009] Optionally, the second power supply circuit includes a diode having an anode and a cathode, wherein the anode is connected to the third pin, and the cathode is connected to the regulator; and the diode is formed by a transistor.

[0010] Optionally, the power device further includes a third power circuit connected to the power switch circuit and the regulator, for obtaining a sixth voltage from the power switch circuit to generate a seventh voltage, wherein the regulator converts the seventh voltage into the third voltage.

[0011] Optionally, the power switching circuit includes: a first switching element having a first input end, a first output end and a first control end, wherein the first input end is connected to the first pin, the first output end is connected to the third power supply circuit, and the first control end is connected to the second pin; and a second switching element having a second input end, a second output end and a second control end, wherein the second input end is connected to the first output end, the second output end is connected to the second pin, and the second control end is connected to the driver; wherein the third power supply circuit obtains the sixth voltage from the first output end.

[0012] Optionally, the first switch element includes a depletion-mode gallium nitride transistor, and the second switch element includes a metal oxide semiconductor field effect transistor or an enhancement-mode gallium nitride transistor.

[0013] Optionally, the third power supply circuit includes a diode having an anode and a cathode, wherein the anode is connected to the first output terminal and the cathode is connected to the regulator; and the diode is formed by a transistor.

[0014] According to a second aspect of the present invention, a power device is provided, comprising a first pin, a second pin, a third pin, a power switching circuit, a driver, a first power supply circuit, and a regulator. The power switching circuit is used to connect the first pin to the second pin, or to disconnect the first pin and the second pin. The driver controls the power switching circuit to connect or disconnect the first pin and the second pin based on a signal on the third pin. The first power supply circuit is used to obtain a first voltage from the third pin to generate a second voltage. The regulator is used to convert the second voltage into a third voltage and provide the third voltage to a power supply terminal of the driver.

[0015] Optionally, the first power supply circuit includes a diode having an anode and a cathode, wherein the anode is connected to the third pin, and the cathode is connected to the regulator.

[0016] Optionally, the diode is formed by a transistor.

[0017] Optionally, the power device further includes a second power extraction circuit connected to the power switch circuit and the regulator, for obtaining a fourth voltage from the power switch circuit to generate a fifth voltage, wherein the regulator converts the fifth voltage into the third voltage.

[0018] Optionally, the power switching circuit includes: a first switching element having a first input end, a first output end and a first control end, wherein the first input end is connected to the first pin, the first output end is connected to the second power supply circuit, and the first control end is connected to the second pin; and a second switching element having a second input end, a second output end and a second control end, wherein the second input end is connected to the first output end, the second output end is connected to the second pin, and the second control end is connected to the driver; wherein the second power supply circuit obtains the fourth voltage from the first output end.

[0019] Optionally, the first switch element includes a depletion-mode gallium nitride transistor, and the second switch element includes a metal oxide semiconductor field effect transistor or an enhancement-mode gallium nitride transistor.

[0020] According to a third aspect of the present invention, a power device is provided, comprising a first pin, a second pin, a third pin, a power switching circuit, a driver, a first power supply circuit, and a regulator. The power switching circuit is configured to connect the first pin to the second pin, or to disconnect the first pin from the second pin. The driver controls the power switching circuit to connect or disconnect the first pin from the second pin based on a signal on the third pin. The first power supply circuit is configured to obtain a first voltage from the power switching circuit to generate a second voltage. The regulator is configured to convert the second voltage into a third voltage and provide the third voltage to a power supply terminal of the driver.

[0021] Optionally, the power switching circuit includes: a first switching element having a first input end, a first output end and a first control end, wherein the first input end is connected to the first pin, the first output end is connected to the first power supply circuit, and the first control end is connected to the second pin; and a second switching element having a second input end, a second output end and a second control end, wherein the second input end is connected to the first output end, the second output end is connected to the second pin, and the second control end is connected to the driver; wherein the first power supply circuit obtains the first voltage from the first output end.

[0022] Optionally, the first switch element includes a depletion-mode gallium nitride transistor, and the second switch element includes a metal oxide semiconductor field effect transistor or an enhancement-mode gallium nitride transistor.

[0023] Optionally, the power device further includes a second power-taking circuit connected to the first pin and the regulator, for obtaining a fourth voltage from the first pin to generate a fifth voltage, wherein the regulator converts the fifth voltage into the third voltage.

[0024] Optionally, the second power supply circuit includes a junction field effect transistor having an input terminal, an output terminal and a control terminal, wherein the input terminal is connected to the first pin, the output terminal is connected to the regulator, and the control terminal is connected to the second pin or a preset voltage source.

[0025] The power device of the present invention can be powered from within the device, eliminating the need for additional pins to externally power the device. Compared to existing power devices requiring four pins, the power device of the present invention can reduce costs. Furthermore, the power device of the present invention can directly replace power devices using MOSFETs in electronic devices, eliminating the need to modify the device's power electronics topology. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 For power devices currently using GaN transistors;

[0027] Figure 2 This is a first embodiment of the power device of the present invention;

[0028] Figure 3 for Figure 2 An embodiment of the power taking circuit in;

[0029] Figure 4 for Figure 2 A first embodiment of a medium power switching circuit;

[0030] Figure 5 for Figure 2 A third embodiment of a medium power switching circuit;

[0031] Figure 6 for Figure 2 A third embodiment of a medium power switching circuit;

[0032] Figure 7 This is a second embodiment of the power device of the present invention;

[0033] Figure 8 for Figure 7 An embodiment of the power taking circuit in;

[0034] Figure 9 is a third embodiment of the power device of the present invention;

[0035] Figure 10 for Figure 9 An embodiment of the power taking circuit in;

[0036] Figure 11 This is a fourth embodiment of the power device of the present invention;

[0037] Figure 12 This is a fifth embodiment of the power device of the present invention;

[0038] Figure 13 This is a sixth embodiment of the power device of the present invention;

[0039] Figure 14 This is a seventh embodiment of the power device of the present invention;

[0040] In the picture:

[0041] 100. Power device;

[0042] 102. Regulator;

[0043] 104. Driver;

[0044] 106. Power switching circuit;

[0045] 108, pin;

[0046] 110, pin;

[0047] 112, pin;

[0048] 114, pin;

[0049] 200. Power device;

[0050] 202, regulator;

[0051] 204, driver;

[0052] 206, power circuit;

[0053] 208. Power switching circuit;

[0054] 210, pin;

[0055] 212, pin;

[0056] 214, pin;

[0057] 300, power device;

[0058] 302, power circuit;

[0059] 400, power device;

[0060] 402, power circuit;

[0061] D1, diode;

[0062] G1, depletion-mode GaN transistor;

[0063] G2, enhancement-mode GaN transistor;

[0064] G3, depletion-mode GaN transistor;

[0065] G4, enhancement-mode GaN transistor;

[0066] G5, enhancement-mode GaN transistor;

[0067] J1, junction field effect transistor;

[0068] M1, transistor;

[0069] V1, voltage;

[0070] V2, voltage;

[0071] V3, voltage;

[0072] V4, voltage;

[0073] V5, voltage;

[0074] Vd, driving signal;

[0075] VDD, power supply voltage;

[0076] VH, voltage;

[0077] Vin, input signal;

[0078] VL, voltage;

[0079] Vp1, voltage;

[0080] Vp2, voltage;

[0081] Vs1, signal;

[0082] Vs2, signal;

[0083] SW1, switch;

[0084] SW2, switch. DETAILED DESCRIPTION

[0085] The present invention will be further described below by describing preferred embodiments in detail with reference to the accompanying drawings.

[0086] Figure 2 This is the first embodiment of the power device of the present invention. Figure 2The power device 200 includes a regulator 202, a driver 204, a power supply circuit 206, a power switch circuit 208, and three pins 210-214. The power switch circuit 208 is connected between pin 212 and pin 214. The power switch circuit 208 is used to connect pin 212 to pin 214 or disconnect pin 212 from pin 214. The power supply circuit 206 is connected to pin 212 and the regulator 202. The power supply circuit 206 obtains a voltage VH from pin 212 to generate a voltage V1. The regulator 202 is connected between the power supply circuit 206 and the driver 204. The regulator 202 is used to convert the voltage V1 from the power supply circuit 206 into a voltage V2 and provide the voltage V2 to one of the two power supply terminals of the driver 204. The other power supply terminal of the driver 204 obtains the voltage VL through pin 214. The voltage VL can be, but is not limited to, 0V. The driver 204 generates a driving signal Vd based on the input signal Vin at the pin 210 to control the power switch circuit 208 to connect the pin 212 to the pin 214 or to disconnect the pins 212 and 214. Specifically, when the input signal Vin is at a first level (e.g., a high level), the driver 204 controls the power switch circuit 208 to turn on, thereby connecting the pin 212 to the pin 214. When the input signal Vin is at a second level (e.g., a low level), the driver 204 controls the power switch circuit 208 to turn off, thereby disconnecting the pins 212 and 214.

[0087] Figure 3 for Figure 2 An embodiment of the power taking circuit 206 in FIG. Figure 3 In the embodiment, the power supply circuit 206 includes a junction gate field-effect transistor (JFET) J1, which has an input terminal, an output terminal, and a control terminal, wherein the input terminal is connected to the pin 212, the output terminal is connected to the regulator 202, and the control terminal is connected to the pin 214. In other embodiments, the control terminal of the JFET J1 can also be connected to a preset voltage source. Figure 3 In the embodiment, power extraction circuit 206 is formed by JFET J1, but the present invention is not limited thereto. Other components (such as diodes or MOSFETs) can also serve as the power extraction circuit. When voltage VH at pin 212 is high, the component connected to pin 212 in power extraction circuit 206 must be a high-voltage-resistant component to prevent burnout.

[0088] Figure 4 、 Figure 5 and Figure 6 These are three embodiments of the power switch circuit 208 , but the power switch circuit 208 of the present invention is not limited to these three architectures. Figure 4 for Figure 2 The first embodiment of the medium power switch circuit 208 includes a depletion-mode GaN transistor G1 and an enhancement-mode GaN transistor G2 as switching elements. The depletion-mode GaN transistor G1 has a first input terminal (drain), a first output terminal (source), and a first control terminal (gate), wherein the first input terminal is connected to the pin 212, the first output terminal is connected to the enhancement-mode GaN transistor G2, and the first control terminal is connected to the pin 214. The enhancement-mode GaN transistor G2 has a second input terminal (drain), a second output terminal (source), and a second control terminal (gate), wherein the second input terminal is connected to the first output terminal, the second output terminal is connected to the pin 214, and the second control terminal is connected to the driver 204. In other embodiments, Figure 4 The enhancement-mode GaN transistor G2 can also be replaced by a MOSFET.

[0089] Figure 5 for Figure 2 A second embodiment of a medium-power switching circuit 208 includes a depletion-mode GaN transistor G3 and an enhancement-mode GaN transistor G4 as switching elements. Depletion-mode GaN transistor G3 has a first input terminal (drain), a first output terminal (source), and a first control terminal (gate). The first input terminal is connected to pin 212, the first output terminal is connected to enhancement-mode GaN transistor G4, and the first control terminal is connected to driver 204. Enhancement-mode GaN transistor G4 has a second input terminal (drain), a second output terminal (source), and a second control terminal (gate). The second input terminal is connected to the first output terminal, the second output terminal is connected to pin 214, and the second control terminal is connected to a power supply voltage VDD via a switch SW1 controlled by a signal Vs1. The second control terminal is connected to pin 214 via a switch SW2 controlled by a signal Vs2. When the driver 204 is just started, the driving signal Vd cannot immediately reach the preset level to turn off the depletion-mode GaN transistor G3. Therefore, in order to prevent the depletion-mode GaN transistor G3 and the enhancement-mode GaN transistor G4 from being turned on at the same time and causing circuit damage, when the driver 204 is just started, the switch SW1 will be turned off and the switch SW2 will be turned on to turn off the enhancement-mode GaN transistor G4. After the driver 204 is started (i.e., the driving signal Vd reaches the preset level), the switch SW1 will be turned on and the switch SW2 will be turned off to keep the enhancement-mode GaN transistor G4 in the on state. In other embodiments, Figure 5 The switch SW2 can also be connected between the second control terminal and a ground terminal. In other embodiments, Figure 5 The enhancement-mode GaN transistor G4 can also be replaced by a MOSFET.

[0090] Figure 6 for Figure 2 A third embodiment of a medium-power switching circuit 208 includes an enhancement-mode GaN transistor G5 as a switching element. The enhancement-mode GaN transistor G5 has an input terminal (drain), an output terminal (source), and a control terminal (gate). The input terminal is connected to pin 212 , the output terminal is connected to pin 214 , and the control terminal is connected to driver 204 .

[0091] Figure 7 This is the second embodiment of the power device of the present invention. Figure 7 The power device 300 and Figure 2 Power device 200 similarly includes a regulator 202, a driver 204, a power extraction circuit 206, a power switching circuit 208, and three pins 210-214. The difference is that power device 300 further includes a power extraction circuit 302. Power extraction circuit 302 is connected to regulator 202 and pin 210. Power extraction circuit 302 extracts a voltage (i.e., input signal Vin) from pin 210 to generate voltage V3 for regulator 202. Regulator 202 then converts voltage V3 into voltage V2.

[0092] Figure 8 for Figure 7 An embodiment of the power taking circuit 302 in FIG. Figure 8 In the embodiment, the power supply circuit 302 includes a diode D1. The diode D1 has an anode and a cathode, wherein the anode is connected to the pin 210 and the cathode is connected to the regulator 202. In other embodiments, the diode D1 can be formed by a transistor. Figure 8 In the embodiment, the power supply circuit 302 is composed of a diode D1, but the present invention is not limited thereto.

[0093] Figure 9 This is the third embodiment of the power device of the present invention. Figure 9 The power device 400 and Figure 7 The power device 300 also includes a regulator 202, a driver 204, a power extraction circuit 206, a power switch circuit 208, three pins 210-214, and the power extraction circuit 302. The difference is that the power device 400 further includes a power extraction circuit 402. The power extraction circuit 402 is connected to the regulator 202 and the power switch circuit 208. The power extraction circuit 402 obtains a voltage V4 from the power switch circuit 208 to generate a voltage V5 for the regulator 202.

[0094] Figure 10 for Figure 9 An embodiment of the power taking circuit 402 in FIG. Figure 10 In the embodiment, the power switch circuit 208 is Figure 4 Take the architecture as an example. Figure 10The power supply circuit 402 includes a transistor M1, and the transistor M1 forms a diode. The drain and gate (anode) of the transistor M1 are connected to the first output terminal (source) of the depletion-mode GaN transistor G1 in the power switch circuit 208, and the source (cathode) of the transistor M1 is connected to the regulator 202. The transistor M1 obtains the voltage V4 from the first output terminal of the depletion-mode GaN transistor G1 and generates a voltage V5 for the regulator 202. Figure 9 In the embodiment, the power supply circuit 402 is composed of a transistor M1, but the present invention is not limited thereto.

[0095] Figure 11 This is the fourth embodiment of the power device of the present invention. Figure 11 The power device 500 and Figure 7 The power device 300 also includes a regulator 202 , a driver 204 , a power switch circuit 208 , three pins 210 ˜ 214 and a power extraction circuit 302 . The difference is that the power device 500 omits the power extraction circuit 206 .

[0096] Figure 12 This is the fifth embodiment of the power device of the present invention. Figure 12 The power device 600 and Figure 9 The power device 400 also includes a regulator 202 , a driver 204 , a power switch circuit 208 , three pins 210 ˜ 214 , a power extraction circuit 302 and a power extraction circuit 402 . The difference is that the power device 600 omits the power extraction circuit 206 .

[0097] Figure 13 This is the sixth embodiment of the power device of the present invention. Figure 13 The power device 700 and Figure 12 The power device 600 also includes a regulator 202 , a driver 204 , a power switch circuit 208 , three pins 210 ˜ 214 and a power extraction circuit 402 . The difference is that the power device 700 omits the power extraction circuit 302 .

[0098] Figure 14 This is the seventh embodiment of the power device of the present invention. Figure 14 The power device 800 with Figure 9 The power device 400 also includes a regulator 202 , a driver 204 , a power extraction circuit 206 , a power switch circuit 208 , three pins 210 ˜ 214 and the power extraction circuit 402 . The difference is that the power device 800 omits the power extraction circuit 302 .

[0099] The above description is merely an embodiment of the present invention and does not constitute any form of limitation to the present invention. Although the present invention has been disclosed as above by the embodiment, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes or modifications to equivalent embodiments of the technical contents disclosed above without departing from the scope of the technical solution of the present invention. However, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention are still within the scope of the technical solution of the present invention.

Claims

1. A power device, characterized in that: include: a first pin; a second pin; a third pin; a power switch circuit connected between the first pin and the second pin, for connecting the first pin to the second pin or disconnecting the first pin from the second pin; a driver connected to the third pin and the power switch circuit, and controlling the power switch circuit to connect or disconnect the first pin and the second pin according to a signal on the third pin; a first power-taking circuit connected to the first pin, for obtaining a first voltage from the first pin to generate a second voltage; and a regulator connected to the first power circuit and the driver, for converting the second voltage into a third voltage and providing the third voltage to a power supply terminal of the driver.

2. The power device according to claim 1, wherein: The first power-taking circuit includes a junction field-effect transistor having an input terminal, an output terminal, and a control terminal, wherein the input terminal is connected to the first pin, the output terminal is connected to the regulator, and the control terminal is connected to the second pin or a preset voltage source.

3. The power device according to claim 1, wherein: The device further includes a second power-taking circuit connected to the third pin and the regulator, for obtaining a fourth voltage from the third pin to generate a fifth voltage, wherein the regulator converts the fifth voltage into the third voltage.

4. The power device according to claim 3, wherein: The second power-taking circuit includes a diode having an anode and a cathode, wherein the anode is connected to the third pin, and the cathode is connected to the regulator.

5. The power device according to claim 4, wherein: The diode is formed by a transistor.

6. The power device according to claim 3, wherein: The device further includes a third power-taking circuit connected to the power switch circuit and the regulator, for obtaining a sixth voltage from the power switch circuit to generate a seventh voltage, wherein the regulator converts the seventh voltage into the third voltage.

7. The power device according to claim 6, wherein: The power switch circuit includes: a first switch element having a first input terminal, a first output terminal, and a first control terminal, wherein the first input terminal is connected to the first pin, the first output terminal is connected to the third power circuit, and the first control terminal is connected to the second pin; and a second switch element having a second input terminal, a second output terminal, and a second control terminal, wherein the second input terminal is connected to the first output terminal, the second output terminal is connected to the second pin, and the second control terminal is connected to the driver; The third power-taking circuit obtains the sixth voltage from the first output terminal.

8. The power device according to claim 7, wherein: The first switch element includes a depletion-mode gallium nitride transistor, and the second switch element includes a metal oxide semiconductor field effect transistor or an enhancement-mode gallium nitride transistor.

9. The power device according to claim 7, wherein: The third power-taking circuit includes a diode having an anode and a cathode, wherein the anode is connected to the first output terminal, and the cathode is connected to the regulator.

10. The power device according to claim 9, wherein: The diode is formed by a transistor.

11. A power device, characterized in that: include: a first pin; a second pin; a third pin; a power switch circuit connected between the first pin and the second pin, for connecting the first pin to the second pin or disconnecting the first pin from the second pin; a driver connected to the third pin and the power switch circuit, and controlling the power switch circuit to connect or disconnect the first pin and the second pin according to a signal on the third pin; a first power-taking circuit connected to the third pin, for obtaining a first voltage from the third pin to generate a second voltage; and a regulator connected to the first power circuit and the driver, for converting the second voltage into a third voltage and providing the third voltage to a power supply terminal of the driver.

12. The power device according to claim 11, wherein: The first power-taking circuit includes a diode having an anode and a cathode, wherein the anode is connected to the third pin, and the cathode is connected to the regulator.

13. The power device according to claim 12, wherein: The diode is formed by a transistor.

14. The power device according to claim 11, wherein: The device further includes a second power-taking circuit connected to the power switch circuit and the regulator, for obtaining a fourth voltage from the power switch circuit to generate a fifth voltage, wherein the regulator converts the fifth voltage into the third voltage.

15. The power device according to claim 14, wherein: The power switch circuit includes: a first switch element having a first input terminal, a first output terminal, and a first control terminal, wherein the first input terminal is connected to the first pin, the first output terminal is connected to the second power circuit, and the first control terminal is connected to the second pin; and a second switch element having a second input terminal, a second output terminal, and a second control terminal, wherein the second input terminal is connected to the first output terminal, the second output terminal is connected to the second pin, and the second control terminal is connected to the driver; The second power-taking circuit obtains the fourth voltage from the first output terminal.

16. The power device according to claim 15, wherein: The first switch element includes a depletion-mode gallium nitride transistor, and the second switch element includes a metal oxide semiconductor field effect transistor or an enhancement-mode gallium nitride transistor.

17. A power device, characterized in that: include: a first pin; a second pin; a third pin; a power switch circuit connected between the first pin and the second pin, for connecting the first pin to the second pin or disconnecting the first pin from the second pin; a driver connected to the third pin and the power switch circuit, and controlling the power switch circuit to connect or disconnect the first pin and the second pin according to a signal on the third pin; a first power-taking circuit connected to the power switch circuit and configured to obtain a first voltage from the power switch circuit to generate a second voltage; and a regulator connected to the first power circuit and the driver, for converting the second voltage into a third voltage and providing the third voltage to a power supply terminal of the driver.

18. The power device according to claim 17, wherein: The power switch circuit includes: a first switch element having a first input terminal, a first output terminal, and a first control terminal, wherein the first input terminal is connected to the first pin, the first output terminal is connected to the first power circuit, and the first control terminal is connected to the second pin; and a second switch element having a second input terminal, a second output terminal, and a second control terminal, wherein the second input terminal is connected to the first output terminal, the second output terminal is connected to the second pin, and the second control terminal is connected to the driver; The first power-taking circuit obtains the first voltage from the first output terminal.

19. The power device according to claim 18, wherein: The first switch element includes a depletion-mode gallium nitride transistor, and the second switch element includes a metal oxide semiconductor field effect transistor or an enhancement-mode gallium nitride transistor.

20. The power device according to claim 17, wherein: The device further includes a second power-taking circuit connected to the first pin and the regulator, for obtaining a fourth voltage from the first pin to generate a fifth voltage, wherein the regulator converts the fifth voltage into the third voltage.

21. The power device according to claim 20, wherein: The second power-taking circuit includes a junction field-effect transistor having an input terminal, an output terminal, and a control terminal, wherein the input terminal is connected to the first pin, the output terminal is connected to the regulator, and the control terminal is connected to the second pin or a preset voltage source.

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