Cylindrical capacitor and forming method thereof
By designing a cylindrical capacitor, using a hard layer with a harderness higher than other layers and an oxidized surface portion treated with ozone, the challenges of high capacitance and low leakage of capacitors in semiconductor devices are solved, and the structural stability and capacitance value are improved.
CN120731005APending Publication Date: 2025-09-30NAN YA TECH
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Patent Information
- Application Number
- CN202411324461.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-03-27
- Filing Date
- 2024-09-23
- Publication Date
- 2025-09-30
AI Technical Summary
Technical Problem
As semiconductor device sizes shrink, capacitors face challenges in maintaining high capacitance and reducing leakage.
Method used
A cylindrical capacitor is designed, comprising a first electrode having a hollow cylindrical shape, a surface portion of the electrode being oxidized, a dielectric layer, and a second electrode. A hard layer having a higher hardness than other layers is formed on the surface of the electrode to enhance structural stability, and an oxidized surface portion is formed by ozone treatment to reduce leakage.
Benefits of technology
The hardness of the capacitor is improved, leakage is reduced, structural collapse is avoided, and the capacitance value is increased.
✦ Generated by Eureka AI based on patent content.
Abstract
The present disclosure provides a cylindrical capacitor. The cylindrical capacitor comprises a first electrode, a dielectric layer and a second electrode. The first electrode has a shape of a hollow cylinder, wherein the first electrode includes a plurality of oxidized surface portions, a plurality of first metal-containing layers, and a first hard layer. These oxidized surface portions are at a plurality of cylindrical surfaces of the hollow cylinder of the first electrode. A first metal-containing layer is between the oxidized surface portions. The first hard layer is disposed between the first metal-containing layers, and the hardness of the first hard layer is greater than a plurality of hardness of the oxidized surface portions and the first metal-containing layers. The dielectric layer is disposed on the first electrode. The second electrode is disposed on the dielectric layer. According to the cylindrical capacitor and the forming method thereof, electric leakage of the cylindrical capacitor is reduced by improving the hardness of the cylindrical capacitor, structural collapse of the cylindrical capacitor is avoided, and the capacitance value of the cylindrical capacitor is increased.
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