Porous alumina ceramic, preparation method thereof, semiconductor vacuum chuck and application

Abstract

The invention belongs to the technical field of aluminum nitride preparation, and particularly relates to porous aluminum oxide ceramic, a preparation method thereof, a semiconductor vacuum chuck and application. The porous alumina ceramic comprises a porous ceramic matrix, the porous ceramic matrix is prepared from the following raw materials in parts by weight: 100 parts of aluminum oxide, 10 to 20 parts of polyaniline, 10 to 20 parts of dopamine, 3 to 5 parts of borazane and 3 to 5 parts of aluminum oxide. The porous alumina ceramic provided by the invention has very high mechanical strength and thermal conductivity.

Description

Technical Field

[0001] The present invention belongs to the technical field of alumina ceramic preparation, and in particular relates to a porous alumina ceramic and a preparation method thereof, a semiconductor vacuum chuck and applications thereof. Background Art

[0002] Porous alumina ceramics are high-performance structural materials with a unique pore structure, widely used in fields such as filtration, catalysis, and biomedicine. The preparation processes for porous alumina ceramics generally include pore-forming agent methods, particle stacking and sintering methods, and sol-gel methods. These processes are extremely sensitive to parameters (such as temperature, pressure, and sintering aids), and even slight deviations can lead to reduced porosity or mechanical properties. Therefore, the preparation process of porous alumina ceramics determines the performance of the finished ceramics. Products produced using traditional porous alumina preparation processes have significantly reduced mechanical and thermal conductivity properties, failing to meet demand.

[0003] In order to improve the mechanical, thermal conductivity and other properties of porous alumina ceramics, processes such as introducing a second phase (such as ZrO2, TiO2) to enhance the mechanical properties, surface modification and structural optimization of alumina are usually adopted. However, these existing processes have great difficulty in controlling the pore size, distribution and connectivity of alumina, and are prone to problems such as local density unevenness or poor pore connectivity, which affects the performance consistency and leads to insufficient mechanical, thermal conductivity and other properties of the ceramics. Summary of the Invention

[0004] To solve the above problems, the present invention proposes a porous alumina ceramic and a preparation method thereof, a semiconductor vacuum chuck and applications thereof, so as to solve at least one aspect of the above technical problems.

[0005] The present invention is achieved through the following technical solutions: In a first aspect, the present invention provides a porous alumina ceramic comprising a porous ceramic substrate; The porous ceramic matrix comprises the following raw materials in parts by weight: 100 parts of aluminum oxide, 10 to 20 parts of polyaniline, 10 to 20 parts of dopamine, 3 to 5 parts of borazine, and 3 to 5 parts of zirconium oxide.

[0006] In some possible implementations, the average pore size of the porous ceramic matrix is ​​90 μm to 120 μm.

[0007] In some possible implementations, the porous alumina ceramic further includes a coating layer coated on the surface of the ceramic matrix.

[0008] In some possible implementations, the material of the coating layer includes silicon oxide.

[0009] In some possible implementations, the coating layer has a thickness of 50 nm to 100 nm.

[0010] In a second aspect, the present invention provides a method for preparing the above-mentioned porous alumina ceramic, comprising the following steps: Preparation of porous ceramic substrate.

[0011] In some possible implementations, the preparation of the porous ceramic substrate includes the following steps: Pressing and sintering the mixed raw materials; The mixed raw materials include aluminum oxide, polyaniline, dopamine, borazine and zirconium oxide.

[0012] In some possible implementations, the pressing pressure is 8 MPa to 12 MPa.

[0013] In some possible implementations, the pressing time is 12 minutes to 15 minutes.

[0014] In some possible implementations, the sintering includes the following steps: Low-temperature sintering and high-temperature sintering were performed under a nitrogen atmosphere.

[0015] In some possible implementations, the low-temperature sintering step includes: Heat to 200℃~400℃ at a heating rate of 20℃ / min~30℃ / min and keep warm.

[0016] In some possible implementations, the high-temperature sintering step includes: The temperature was raised from 200°C~400°C to 700°C~1000°C at a heating rate of 20°C / min~30°C / min, and then kept warm.

[0017] In a third aspect, the present invention provides a semiconductor vacuum chuck, the material of which includes the above-mentioned porous alumina ceramic.

[0018] In a fourth aspect, the present invention provides an application of the above-mentioned porous alumina ceramic in the field of semiconductor manufacturing or electronic packaging.

[0019] The porous alumina ceramics and their preparation methods, as well as the semiconductor vacuum chuck provided by the present invention, have at least the following beneficial technical effects compared to the prior art: (1) The porous alumina ceramics provided by the present invention have high mechanical strength and thermal conductivity.

[0020] (2) In the preparation method of the porous alumina ceramic provided by the present invention, low-temperature sintering and high-temperature sintering are adopted. The low-temperature sintering causes the polyaniline, dopamine and cyclopentadiene to decompose and form pores; the high-temperature sintering causes the intermediates of the residual polyaniline, dopamine and cyclopentadiene to completely decompose and the residual carbon elements to carbonize, thereby improving the mechanical strength of the ceramic. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present drawings or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present drawings. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0022] Figure 1 A schematic diagram of the three-dimensional structure of a semiconductor vacuum chuck provided in an embodiment of the present invention; Figure 2 A schematic diagram of the microstructure of the porous alumina ceramic provided in Example 1 of the present invention; Figure 3 Schematic diagram of the microstructure of the alumina ceramic provided in Comparative Example 1 of the present invention.

[0023] The purpose, features and advantages of this drawing will be further described with reference to the accompanying drawings in conjunction with the embodiments. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is described and illustrated below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are merely for explaining the present invention and are not intended to limit the present invention. Based on the embodiments provided by the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work are within the scope of protection of the present invention.

[0025] Obviously, the following descriptions are merely examples or embodiments of the present invention, and those skilled in the art will be able to apply the present invention to other similar scenarios without inventive effort. Furthermore, it is understood that while the effort involved in such a development process may be complex and lengthy, for those skilled in the art related to the present disclosure, any design, manufacturing, or production changes based on the technical content disclosed in the present disclosure are merely conventional technical means and should not be construed as an inadequacy of the present disclosure.

[0026] However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters or repeated descriptions of substantially identical structures may be omitted. This is to avoid unnecessary redundancy in the following description and to facilitate understanding by those skilled in the art. Furthermore, the following description is provided to facilitate a thorough understanding of the present invention by those skilled in the art and is not intended to limit the subject matter recited in the claims.

[0027] Unless otherwise specified, all embodiments and optional embodiments of the present invention can be combined with each other to form a new technical solution, and all technical features and optional technical features of the present invention can be combined with each other to form a new technical solution.

[0028] A first aspect of an embodiment of the present invention provides a porous alumina ceramic, comprising a porous ceramic substrate; The porous ceramic matrix includes the following raw materials in parts by weight: 100 parts of aluminum oxide, 10 to 20 parts of polyaniline, 10 to 20 parts of dopamine, 3 to 5 parts of borazine, and 3 to 5 parts of zirconium oxide.

[0029] The porous alumina ceramic provided by an embodiment of the present invention comprises polyaniline, dopamine and cycloborane as pore-forming agents in the raw materials, which decompose at high temperature to open micron-scale pores (polyaniline) and nanoscale pores (dopamine and cycloborane) in the alumina, thereby forming a porous structure in the alumina ceramic. Polyaniline and dopamine also serve as nitrogen sources and nitrogen sources, decompose at high temperature, and the generated gas is used to form pores in the alumina ceramic. Nitrogen can react with alumina to form aluminum nitride, thereby improving the mechanical properties and thermal conductivity of the ceramic. Cycloborane also serves as a boron source and nitrogen source, decomposes at high temperature, and the generated gas is used to form pores in the alumina ceramic. The generated boron nitride and aluminum nitride have good corrosion resistance and mechanical properties, thereby improving the corrosion resistance and mechanical properties of the aluminum nitride ceramic. Zirconium oxide improves the mechanical strength of the ceramic.

[0030] In some embodiments, the aluminum oxide has a CAS number of 1344-28-1.

[0031] In some embodiments, the polyaniline has a CAS number of 5612-44-2.

[0032] In some embodiments, dopamine has a CAS number of 51-61-6.

[0033] In some embodiments, the structural formula of borazine is as follows: .

[0034] In some embodiments, the zirconium oxide has a CAS number of 1314-23-4.

[0035] In some embodiments, the average particle size of zirconium oxide is 50 nm to 70 nm.

[0036] In some embodiments, the average pore size of the pores in the porous ceramic matrix is ​​90 μm to 120 μm.

[0037] In some embodiments, the porous alumina ceramic further includes a coating layer coated on the surface of the ceramic substrate.

[0038] In some embodiments, the material of the cladding layer includes silicon oxide.

[0039] In some embodiments, the coating layer has a thickness of 50 nm to 100 nm.

[0040] A second aspect of an embodiment of the present invention provides a method for preparing the above-mentioned porous alumina ceramic, comprising the following steps: S10. Prepare a porous ceramic substrate.

[0041] In some embodiments, in the above step S10, preparing the porous ceramic substrate includes the following steps: S101. The mixed raw materials are pressed and sintered; The mixed raw materials include aluminum oxide, polyaniline, dopamine, borazine and zirconium oxide.

[0042] In some embodiments, in the above step S101, the preparation of the mixed raw material includes the following steps: S1011. Alumina, polyaniline, dopamine, borazine and zirconium oxide are mixed and ball milled.

[0043] In the preparation of the mixed raw materials, the raw materials are mixed and ball-milled to refine the particle size of the raw materials and the uniformity of the mixed raw materials, thereby improving the density of the ceramic.

[0044] In some embodiments, in the above step S1011, the ball milling solution includes at least one of acetone and tetrahydrofuran.

[0045] In some embodiments, in the above step S101, the pressing pressure is 8 MPa to 12 MPa.

[0046] In some embodiments, in the above step S101, the pressing time is 12 minutes to 15 minutes.

[0047] In some embodiments, in the above step S101, sintering includes the following steps: S1012. Perform low-temperature sintering and high-temperature sintering in a nitrogen atmosphere.

[0048] In the above sintering steps, low-temperature sintering is first performed and then high-temperature sintering. The low-temperature sintering causes the polyaniline, dopamine and cyclopentadiene to decompose and form pores; the high-temperature sintering causes the intermediates of the residual polyaniline, dopamine and cyclopentadiene to completely decompose and the residual carbon elements to carbonize, thereby improving the mechanical strength of the ceramic.

[0049] In some embodiments, in the above step S1012, the low temperature sintering step includes: S10121. Raise the temperature to 200℃~400℃ at a heating rate of 20℃ / min~30℃ / min and keep warm.

[0050] In some embodiments, in the above step S10121, the insulation time is 1 hour to 2 hours.

[0051] In some embodiments, in the above step S1012, the high temperature sintering step includes: S10122. Raise the temperature from 200℃~400℃ to 700℃~1000℃ at a heating rate of 20℃ / min~30℃ / min, and then hold.

[0052] In some embodiments, in the above step S10122, the insulation time is 1 hour to 2 hours.

[0053] In some embodiments, the method for preparing porous alumina ceramics further comprises the following steps: S20. Prepare a coating layer.

[0054] In some embodiments, in the above step S20, preparing the coating layer includes the following steps: S201. Deposit a silicon oxide coating layer on the surface of a porous ceramic substrate using a plasma enhanced chemical vapor deposition (PECVD) method.

[0055] In some embodiments, in the above step S201 , in the plasma enhanced chemical vapor deposition method, the silicon source includes hexamethyldisiloxane ((CH 3 ) 3 SiOSi(CH 3 ) 3 , HMDSO).

[0056] In some embodiments, in the above step S201 , in the plasma enhanced chemical vapor deposition method, the oxygen source includes oxygen plasma.

[0057] In some embodiments, in the above step S201, in the plasma enhanced chemical vapor deposition method, the volume ratio of HMDSO and O2 is 1:(10~18).

[0058] In some embodiments, in the above step S201 , in the plasma enhanced chemical vapor deposition method, the carrier gas is helium or argon.

[0059] In some embodiments, in the above step S201 , in the plasma enhanced chemical vapor deposition method, the volume proportion of the carrier gas is 50% to 80%.

[0060] In some embodiments, in the above step S201 , in the plasma enhanced chemical vapor deposition method, the deposition temperature is 150° C. to 200° C.

[0061] In some embodiments, in the above step S201, in the plasma enhanced chemical vapor deposition method, the deposition time is 5 minutes to 10 minutes.

[0062] In some embodiments, a method for preparing the porous alumina ceramic is provided, comprising the following steps: S11. Prepare a porous ceramic substrate.

[0063] S21. Prepare a coating layer.

[0064] A third aspect of the present invention provides a semiconductor vacuum chuck, such as Figure 1 As shown, the material comprises the porous alumina ceramics described above.

[0065] The following is further explained with reference to specific embodiments.

[0066] Example 1 Example 1 provides a porous alumina ceramic, consisting of a porous ceramic matrix; The porous ceramic matrix is ​​composed of the following raw materials in parts by weight: 100 parts of aluminum oxide, 15 parts of polyaniline, 15 parts of dopamine, 4 parts of borazine, and 3 parts of zirconium oxide; The average particle size of zirconium oxide is 50 nm.

[0067] This embodiment also provides a method for preparing porous alumina ceramics, the steps of which are as follows: E10. Alumina, polyaniline, dopamine, borazine, and zirconium oxide are mixed and ball-milled to obtain a mixed raw material.

[0068] E20. The mixed raw material is pressed to obtain a pressed body; The pressing pressure was 10 MPa and the pressing time was 10 min.

[0069] E30. Under a nitrogen atmosphere, the pressed body was sintered at low temperature and high temperature to obtain a porous ceramic substrate, ie, the porous alumina ceramic of the present embodiment; The low-temperature sintering step is as follows: heating to 300°C at a heating rate of 25°C / min and then keeping the temperature for 2h; The high-temperature sintering steps are: heating from 300°C to 900°C at a heating rate of 20°C / min and then keeping the temperature for 1 hour.

[0070] Example 2 Example 2 provides a porous alumina ceramic, consisting of a porous ceramic matrix; The porous ceramic matrix is ​​composed of the following raw materials in parts by weight: 100 parts of aluminum oxide, 10 parts of polyaniline, 20 parts of dopamine, 3 parts of borazine and 5 parts of zirconium oxide; The average particle size of zirconium oxide is 70 nm.

[0071] This embodiment also provides a method for preparing porous alumina ceramics. The steps are basically the same as those in Example 1, except that: In step E30, the low-temperature sintering step is as follows: heating to 400°C at a heating rate of 30°C / min and then holding the temperature for 1 hour; The high-temperature sintering steps are: heating from 400°C to 1000°C at a heating rate of 25°C / min and then keeping the temperature for 2h.

[0072] Example 3 Example 3 provides a porous alumina ceramic, consisting of a porous ceramic matrix; The porous ceramic matrix is ​​composed of the following raw materials in parts by weight: 100 parts of aluminum oxide, 20 parts of polyaniline, 20 parts of dopamine, 3 parts of borazine and 4 parts of zirconium oxide; The average particle size of zirconium oxide is 60 nm.

[0073] This embodiment also provides a method for preparing porous alumina ceramics. The steps are basically the same as those in Example 1, except that: In step E30, the low-temperature sintering step is as follows: heating to 200°C at a heating rate of 20°C / min and then keeping the temperature for 2 hours; The high-temperature sintering steps are: heating from 200°C to 700°C at a heating rate of 30°C / min and then keeping the temperature for 2h.

[0074] Example 4 Example 4 provides a porous alumina ceramic, comprising a porous ceramic substrate and a silicon oxide coating layer coated on the surface of the ceramic substrate; The porous ceramic matrix is ​​composed of the following raw materials in parts by weight: 100 parts of aluminum oxide, 15 parts of polyaniline, 10 parts of dopamine, 5 parts of borazine and 5 parts of zirconium oxide; The average particle size of zirconium oxide is 50 nm.

[0075] This embodiment also provides a method for preparing porous alumina ceramics, the steps of which are as follows: E14. Alumina, polyaniline, dopamine, borazine, and zirconium oxide are mixed and ball-milled to obtain a mixed raw material.

[0076] E24. The mixed raw material is pressed to obtain a pressed body; The pressing pressure was 8 MPa and the pressing time was 15 min.

[0077] E34. Under a nitrogen atmosphere, the pressed body was sintered at low temperature and high temperature to obtain a porous ceramic matrix; The low-temperature sintering step is as follows: heating to 400°C at a heating rate of 20°C / min and then keeping the temperature for 1 hour; The high-temperature sintering steps are: heating from 400°C to 1000°C at a heating rate of 30°C / min and then keeping the temperature for 2h.

[0078] E44. Depositing a silicon oxide coating on the surface of a porous ceramic substrate using plasma-enhanced chemical vapor deposition; Among them, in the plasma-enhanced chemical vapor deposition method, the silicon source is hexamethyldisiloxane, the oxygen source is oxygen plasma, the deposition temperature is 180°C, the volume proportion of helium (carrier gas) is 60%, the volume ratio of HMDSO and O2 is 1:15, and the deposition time is 8 minutes.

[0079] Example 5 Example 5 provides a porous alumina ceramic, comprising a porous ceramic substrate and an alumina coating layer coated on the surface of the ceramic substrate; The porous ceramic matrix is ​​composed of the following raw materials in parts by weight: 100 parts of aluminum oxide, 10 parts of polyaniline, 10 parts of dopamine, 3 parts of borazine and 3 parts of zirconium oxide; The average particle size of zirconium oxide is 60 nm.

[0080] This embodiment also provides a method for preparing the porous alumina ceramics provided in this embodiment. The steps are basically the same as those in Example 4, except that: In step E44, in the plasma enhanced chemical vapor deposition method, the silicon source is hexamethyldisiloxane, the oxygen source is oxygen plasma, the deposition temperature is 200°C, the volume proportion of helium (carrier gas) is 80%, the volume ratio of HMDSO and O2 is 1:10, and the deposition time is 8 minutes.

[0081] Example 6 Example 6 provides a porous alumina ceramic, comprising a porous ceramic substrate and an alumina coating layer coated on the surface of the ceramic substrate; The porous ceramic matrix is ​​composed of the following raw materials in parts by weight: 100 parts of aluminum oxide, 12 parts of polyaniline, 15 parts of dopamine, 4 parts of borazine, and 4 parts of zirconium oxide; The average particle size of zirconium oxide is 60 nm.

[0082] This embodiment also provides a method for preparing the porous alumina ceramics provided in this embodiment. The steps are basically the same as those in Example 4, except that: In step E44, in the plasma enhanced chemical vapor deposition method, the silicon source is hexamethyldisiloxane, the oxygen source is oxygen plasma, the deposition temperature is 150° C., the volume proportion of helium (carrier gas) is 50%, the volume ratio of HMDSO and O2 is 1:18, and the deposition time is 5 minutes.

[0083] Comparative Example 1 Comparative Example 1 provides an alumina ceramic, which is composed of the following raw materials in parts by weight: 100 parts aluminum oxide, 15 parts polyaniline, 15 parts dopamine, and 3 parts zirconium oxide; The average particle size of zirconium oxide is 50 nm.

[0084] This comparative example also provides a method for preparing alumina ceramics, the steps of which are as follows: D10. Alumina, polyaniline, dopamine, and zirconium oxide were stirred and mixed and then pressed to obtain a pressed body; The pressing pressure was 10 MPa and the pressing time was 10 min.

[0085] D20. Under a nitrogen atmosphere, the pressed body was sintered at 900°C for 3 h to obtain alumina ceramics.

[0086] Comparative Example 2 Comparative Example 2 provides an alumina ceramic, which is composed of the following raw materials in parts by weight: 100 parts of aluminum oxide, 15 parts of polyaniline, 4 parts of borazine, and 3 parts of zirconium oxide; The average particle size of zirconium oxide is 50 nm.

[0087] This comparative example also provides a method for preparing alumina ceramics, and the steps are the same as those of comparative example 1.

[0088] Comparative Example 3 Comparative Example 3 provides an alumina ceramic, which is composed of the following raw materials in parts by weight: 100 parts aluminum oxide, 15 parts dopamine, 4 parts borazine, and 3 parts zirconium oxide; The average particle size of zirconium oxide is 50 nm.

[0089] This comparative example also provides a method for preparing alumina ceramics, and the steps are the same as those of comparative example 1.

[0090] In order to verify the advancement of a porous alumina ceramic and its preparation method provided by the embodiment of the present invention, the ceramics provided by the embodiment of the present invention and the comparative example were tested for the pore size distribution of the ceramics using a scanning electron microscope. The results are shown in Table 1 below. The microstructures of the ceramics of Example 1 and Comparative Example 1 are shown in Table 1. Figure 2 and Figure 3 The bending strength of the ceramics provided in the examples and comparative examples was tested according to standard GB / T6569, and the results are shown in Table 1 below. The thermal conductivity of the ceramics provided in the examples and comparative examples was tested according to standard GB / T 5990, and the results are shown in Table 1 below.

[0091] Table 1

[0092] From the above table and the accompanying drawings, we can at least draw the following conclusions: (1) The method for preparing porous alumina ceramics provided in an embodiment of the present invention has an average pore size of 90 μm to 120 μm. Within this pore size range, the porous alumina ceramics have excellent bending strength (mechanical strength) and thermal conductivity.

[0093] (2) In the preparation method of the porous alumina ceramic provided in the embodiment of the present invention, low-temperature sintering and high-temperature sintering are adopted. The low-temperature sintering causes the polyaniline, dopamine and cyclopentadiene to decompose and form pores; the high-temperature sintering causes the intermediates of the residual polyaniline, dopamine and cyclopentadiene to completely decompose and the residual carbon elements to carbonize, thereby improving the mechanical strength of the ceramic.

[0094] It should be noted that the present invention is not limited to the above-mentioned embodiments. The above-mentioned embodiments are merely examples, and any embodiments having substantially the same structure and effect as the technical concept within the scope of the technical solution of the present invention are all included in the technical scope of the present invention. In addition, without departing from the scope of the present invention, other embodiments that can be conceived by those skilled in the art and that combine some of the constituent elements in the embodiments are also included in the scope of the present invention.

Claims

1. A porous alumina ceramic, characterized in that: including a porous ceramic matrix; The porous ceramic matrix comprises the following raw materials in parts by weight: 100 parts of aluminum oxide, 10 to 20 parts of polyaniline, 10 to 20 parts of dopamine, 3 to 5 parts of borazine, and 3 to 5 parts of zirconium oxide.

2. The porous alumina ceramic according to claim 1, characterized in that The average pore size of the porous ceramic matrix is ​​90 μm to 120 μm.

3. The porous alumina ceramic according to claim 1 or 2, characterized in that: The porous alumina ceramic further includes a coating layer coated on the surface of the ceramic matrix.

4. The porous alumina ceramic according to claim 3, characterized in that The coating layer satisfies at least one of the following conditions (1) to (2): (1) The material of the coating layer includes silicon oxide; (2) The thickness of the coating layer is 50 nm to 100 nm.

5. A method for preparing the porous alumina ceramic according to any one of claims 1 to 4, characterized in that: The steps include: Preparation of porous ceramic substrate.

6. The method for preparing porous alumina ceramics according to claim 5, characterized in that: The preparation of the porous ceramic matrix comprises the following steps: Pressing and sintering the mixed raw materials; The mixed raw materials include aluminum oxide, polyaniline, dopamine, borazine and zirconium oxide.

7. The method for preparing porous alumina ceramics according to claim 6, wherein: Satisfy at least one of the following conditions (1) to (3): (1) The pressing pressure is 8 MPa to 12 MPa; (2) The pressing time is 12 minutes to 15 minutes; (3) The sintering includes the following steps: low-temperature sintering and high-temperature sintering in a nitrogen atmosphere.

8. The method for preparing porous alumina ceramics according to claim 7, wherein: Satisfy at least one of the following conditions (1) to (2): (1) The low-temperature sintering step includes: heating the temperature to 200°C to 400°C at a heating rate of 20°C / min to 30°C / min and then keeping the temperature; (2) The high-temperature sintering step includes: heating from 200°C to 400°C to 700°C to 1000°C at a heating rate of 20°C / min to 30°C / min and then keeping the temperature.

9. A semiconductor vacuum chuck, characterized in that: The material includes the porous alumina ceramic according to any one of claims 1 to 4.

10. Use of the porous alumina ceramic according to any one of claims 1 to 4 in the field of semiconductor manufacturing or electronic packaging.

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