Semiconductor equipment and cleaning method thereof

Abstract

The invention provides semiconductor equipment and a cleaning method thereof, the semiconductor equipment comprises a reaction chamber, a feeding pipeline, a discharging pipeline and a bypass pipeline, two ends of the bypass pipeline are respectively connected with the feeding pipeline and the discharging pipeline, and the bypass pipeline is provided with a bypass driving unit. According to the device, the bypass driving unit arranged on the bypass pipeline can apply driving force to the second material remaining in the bypass pipeline, so that the second material is accelerated to flow to the discharging pipeline and is discharged through the discharging pipeline, and the situation that the second material is retained in the bypass pipeline, so that the hole diameter of the bypass pipeline is decreased, and blockage is caused is avoided.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a semiconductor device and a cleaning method thereof. Background Art

[0002] During the operation of semiconductor equipment, some by-products are generated. As the operating time increases, the by-products will continue to accumulate in the pipelines of the semiconductor equipment, resulting in poor material flow in the pipelines of the semiconductor equipment and increased pressure in the pipelines, affecting the normal operation of the equipment.

[0003] Currently, it is usually necessary to regularly dismantle the pipeline and clean the inside of the pipeline, which seriously affects the return time of the equipment and thus reduces production efficiency. Summary of the Invention

[0004] The following is an overview of the subject matter described in detail in this disclosure. This overview is not intended to limit the scope of the claims.

[0005] According to a first aspect of the present disclosure, a semiconductor device is provided, comprising:

[0006] reaction chamber;

[0007] a feed pipeline connected to the reaction chamber;

[0008] a discharge pipeline connected to the reaction chamber, the discharge pipeline being used to discharge the first material remaining in the reaction chamber;

[0009] The bypass pipeline has two ends connected to the feed pipeline and the discharge pipeline respectively. A bypass drive unit is provided on the bypass pipeline. The bypass drive unit is configured to: when the bypass pipeline is in a conducting state, apply a driving force to the second material remaining in the bypass pipeline to accelerate the second material to flow to the discharge pipeline and be discharged through the discharge pipeline to avoid the second material being retained in the bypass pipeline and causing the bypass pipeline to be blocked.

[0010] In some possible embodiments, the semiconductor device further includes a heating unit, and the heating unit is disposed on the bypass pipeline.

[0011] In some possible embodiments, the heating unit is disposed on the bypass pipeline between the bypass drive unit and the discharge pipeline.

[0012] In some possible embodiments, when the reaction chamber is in a process state, the heating temperature of the heating unit is 120-180° C.; and / or,

[0013] When the reaction chamber is in an idle state, the heating temperature of the heating unit is 45-55°C.

[0014] In some possible embodiments, the feed pipeline includes a first feed pipeline, the first feed pipeline is connected to the reaction chamber and the bypass pipeline, and the first feed pipeline is configured to transport reaction gas to the reaction chamber when the reaction chamber is in a process state; the bypass pipeline includes a main pipeline and a first branch pipeline connected to each other, an end of the main pipeline away from the first branch pipeline is connected to the discharge pipeline, and an end of the first branch pipeline away from the main pipeline is connected to the first feed pipeline, the bypass drive unit is disposed on the main pipeline, and a first valve is disposed on the first branch pipeline;

[0015] When the reaction chamber is in a process state, the first valve is closed, and at least part of the first material in the discharge pipeline enters the bypass pipeline from the end of the main pipeline away from the first branch pipeline, circulates in the bypass pipeline, and is then discharged through the discharge pipeline; and / or,

[0016] When the reaction chamber is in an idle state, the first valve is opened, and the bypass driving unit is started to suck the reaction gas remaining in the first feed pipeline into the bypass pipeline and apply driving force to the material remaining in the bypass pipeline.

[0017] In some possible embodiments, the feed pipeline further includes a second feed pipeline, the second feed pipeline being connected to the reaction chamber and the bypass pipeline, and the second feed pipeline being configured to deliver a cleaning gas to the reaction chamber and / or the bypass pipeline when the reaction chamber is in an idle state;

[0018] The bypass pipeline also includes a second branch connected to the main pipeline, one end of the main pipeline away from the second branch is connected to the discharge pipeline, and one end of the second branch away from the main pipeline is connected to the second feed pipeline, and a second valve is provided on the second branch;

[0019] When the reaction chamber is in a process state, the second valve is closed, and at least part of the first material in the discharge pipeline enters the bypass pipeline from the end of the main pipeline away from the second branch pipeline, circulates in the bypass pipeline, and is then discharged through the discharge pipeline; and / or,

[0020] When the reaction chamber is in an idle state, the second valve is opened, and the bypass driving unit is started to suck part of the cleaning gas from the second feed pipeline into the bypass pipeline and apply driving force to the material remaining in the bypass pipeline.

[0021] In some possible embodiments, the bypass driving unit is disposed on the main line.

[0022] In some possible embodiments, the semiconductor equipment also includes a waste recovery unit, which is arranged at the end of the discharge pipeline and connected to the discharge pipeline. A main drive unit is provided on the discharge pipeline. The main drive unit is located at one end of the discharge pipeline close to the waste recovery unit and is used to drive the first material in the discharge pipeline to flow to the waste recovery unit.

[0023] In some possible embodiments, the semiconductor device includes a plurality of reaction chambers, a plurality of discharge pipes, a plurality of bypass pipes, and a plurality of main drive units in a one-to-one correspondence;

[0024] Wherein, a plurality of bypass pipelines are arranged in parallel and connected to the same bypass drive unit.

[0025] In some possible embodiments, the semiconductor device further includes a cooling unit, which is connected to the bypass driving unit and is configured to cool the bypass driving unit.

[0026] In some possible embodiments, the semiconductor device further includes:

[0027] An air pressure monitoring unit is provided on the bypass pipeline and is located on the bypass pipeline between the bypass drive unit and the feed pipeline;

[0028] An alarm unit is provided on the bypass pipeline and is located on the bypass pipeline between the bypass drive unit and the feed pipeline;

[0029] The filter unit is arranged on the bypass pipeline and is located on the bypass pipeline between the air pressure detection unit and / or the alarm unit and the bypass drive unit.

[0030] A second aspect of the present disclosure provides a cleaning method for a semiconductor device, which is applied to the semiconductor device provided in the first aspect of the present disclosure, comprising:

[0031] Conducting a bypass line connected between the feed line and the discharge line;

[0032] Starting a bypass drive unit provided on the bypass pipeline;

[0033] Among them, the bypass drive unit in the started state is configured to: apply driving force to the second material remaining in the bypass pipeline to accelerate the second material to flow to the discharge pipeline and be discharged through the discharge pipeline, so as to avoid the second material being retained in the bypass pipeline and causing blockage of the bypass pipeline.

[0034] In some possible embodiments, the semiconductor device further includes a heating unit, which is disposed on the bypass pipeline between the bypass drive unit and the discharge pipeline. The cleaning method further includes:

[0035] When the bypass drive unit is activated, the heating unit is turned on.

[0036] In some possible embodiments, the feed pipeline includes a first feed pipeline, the first feed pipeline is connected to the reaction chamber and the bypass pipeline, and the first feed pipeline is configured to transport reaction gas to the reaction chamber when the reaction chamber is in a process state; the bypass pipeline includes a main pipeline and a first branch pipeline connected to each other, an end of the main pipeline away from the first branch pipeline is connected to the discharge pipeline, and an end of the first branch pipeline away from the main pipeline is connected to the first feed pipeline, the bypass drive unit is disposed on the main pipeline, and a first valve is disposed on the first branch pipeline;

[0037] Cleaning methods also include:

[0038] When the reaction chamber is in a process state, the first valve is closed, reaction gas is supplied to the reaction chamber through the first feed pipeline, the bypass drive unit is closed, and at least part of the first material in the discharge pipeline enters the bypass pipeline through the end of the main pipeline away from the first branch pipeline, circulates in the bypass pipeline, and is then discharged through the discharge pipeline;

[0039] When the reaction chamber is in an idle state, the reaction gas is stopped from being introduced into the first feed pipeline, the first valve is opened and the bypass drive unit is started. The bypass drive unit is used to suck the reaction gas remaining in the first feed pipeline into the bypass pipeline, and a driving force is applied to the material remaining in the bypass pipeline.

[0040] In some possible embodiments, the feed pipeline further includes a second feed pipeline, the second feed pipeline being connected to the reaction chamber and the bypass pipeline, and the second feed pipeline being configured to deliver a cleaning gas to the reaction chamber and / or the bypass pipeline when the reaction chamber is in an idle state; the bypass pipeline further includes a second branch connected to the main pipeline, an end of the main pipeline remote from the second branch being connected to the discharge pipeline, and an end of the second branch remote from the main pipeline being connected to the second feed pipeline, and a second valve being provided on the second branch;

[0041] Cleaning methods also include:

[0042] When the reaction chamber is in an idle state, the second valve is opened to introduce cleaning gas into the second feed pipeline, and the bypass drive unit is activated to draw part of the cleaning gas from the second feed pipeline into the bypass pipeline and apply a driving force to the material remaining in the bypass pipeline;

[0043] When the reaction chamber is in the process state, the second valve is closed, the supply of cleaning gas into the second feed pipeline is stopped, the bypass drive unit is turned off, and at least part of the first material in the discharge pipeline enters the bypass pipeline from the end of the main pipeline away from the second branch pipeline, circulates in the bypass pipeline, and is then discharged through the discharge pipeline.

[0044] In the semiconductor device provided by the present disclosure, the bypass drive unit arranged in the bypass line can apply a driving force to the second material remaining in the bypass line to accelerate the second material to flow to the discharge line and be discharged through the discharge line, thereby avoiding the second material being retained in the bypass line, causing the aperture of the bypass line to become smaller and causing blockage.

[0045] Still other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] The accompanying drawings, which are incorporated into and constitute a part of the specification, illustrate embodiments of the present disclosure and, together with the description, are used to explain the principles of the embodiments of the present disclosure. In these drawings, similar reference numerals are used to represent similar elements. The drawings described below are some embodiments of the present disclosure, not all embodiments. For those skilled in the art, other drawings can be derived from these drawings without inventive effort.

[0047] Figure 1 is a schematic diagram showing gas flow in a semiconductor device in an idle state according to an exemplary embodiment;

[0048] Figure 2 is a schematic diagram showing gas flow in a semiconductor device under a process state according to an exemplary embodiment;

[0049] Figure 3 is a system diagram of a semiconductor device according to an exemplary embodiment;

[0050] Figure 4 The figure is a schematic diagram showing the connection relationship among multiple reaction chambers, multiple discharge pipelines, multiple bypass pipelines, multiple main drive units, bypass drive units, and waste recovery units according to an exemplary embodiment.

[0051] Reference numerals:

[0052] 1. Reaction chamber; 2. Feed line; 3. Discharge line; 4. Bypass line; 5. Bypass drive unit; 6. First valve; 7. Second valve; 8. Third valve; 9. Fourth valve; 10. Fifth valve; 11. Sixth valve; 12. Waste recovery unit; 13. Main drive unit; 14. Cooling unit; 15. Air pressure monitoring unit; 16. Alarm unit; 17. Filter unit; 18. Mass flow controller; 19. Seventh valve.

[0053] 21. First feed pipeline; 22. Second feed pipeline;

[0054] 41. First branch road; 42. Main road; 43. Second branch road;

[0055] 111. First bypass line; 112. Second bypass line; 113. Third bypass line;

[0056] 331, first discharge pipeline; 332, second discharge pipeline; 333, third discharge pipeline;

[0057] 131. First main drive unit; 132. Second main drive unit; 133. Third main drive unit. DETAILED DESCRIPTION

[0058] In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions in the disclosed embodiments will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present disclosure. It should be noted that, in the absence of conflict, the embodiments in the present disclosure and the features in the embodiments can be arbitrarily combined with each other.

[0059] Figure 1 1 is a schematic diagram illustrating gas flow within a semiconductor device in an idle state according to an exemplary embodiment (i.e., a gas flow diagram of a semiconductor device in a cleaning mode when a reaction chamber is in an idle state); Figure 2 1 is a schematic diagram of gas flow in a semiconductor device in a process state according to an exemplary embodiment (i.e., a gas flow diagram when a reaction chamber is in a process state); Figure 3 is a system diagram of a semiconductor device according to an exemplary embodiment; Figure 4 The figure is a schematic diagram showing the connection relationship between a plurality of discharge pipelines, a plurality of bypass pipelines, a plurality of main drive units, a bypass drive unit and a waste recovery unit according to an exemplary embodiment.

[0060] In process practice, the inventors of the present application creatively discovered that before introducing reactants such as SiH4 into the reaction chamber for formal operation of the process, reactants such as SiH4 are usually introduced into the bypass line 4 for pre-feeding, that is, the reaction gas in the feed line 2 is introduced into the bypass line 4 to ensure the stability of the airflow and pressure of the reaction gas 4. After the pre-feeding conditions are stable, the reaction gas is introduced into the reaction chamber for the formal process. However, after introducing reactants into the bypass line 4 for pre-feeding and after a long time, residual materials (such as residual silane and generated silicon oxide powder) will be generated and accumulated in the bypass line, which will cause the bypass line 4 to be blocked after a long time. When the reaction gas enters the reaction chamber 1 for reaction, the first material produced will be discharged through the discharge line 3. At this time, since the bypass line 4 is connected to the discharge line 3, part of the first material will enter the bypass line 4, and the reaction products in the first material will accumulate at the interface between the bypass line 4 and the discharge line 3, which will further cause the bypass line 4 to become clogged. Based on this, the present application provides a semiconductor device that can significantly reduce the probability of clogging the bypass line 4.

[0061] According to an exemplary embodiment of the present disclosure, Figures 3 and 4 As shown, this embodiment provides a semiconductor device, comprising: a reaction chamber 1, a feed line 2, a discharge line 3, and a bypass line 4. The feed line 2 and the discharge line 3 are both connected to the reaction chamber 1, and the discharge line 3 is used to discharge the first material remaining in the reaction chamber 1. The two ends of the bypass line 4 are respectively connected to the feed line 2 and the discharge line 3. A bypass drive unit 5 is also provided on the bypass line 4. The bypass drive unit 5 is configured to: when the bypass line 4 is in a conducting state, apply a driving force to the second material remaining in the bypass line 4 to accelerate the second material to flow to the discharge line 3 and be discharged through the discharge line 3, so as to avoid the second material being retained in the bypass line 4 and causing the bypass line 4 to be blocked.

[0062] It should be noted that the first material may include unreacted reactants and reaction products. In one example, the reactants include reaction gases such as SiH4, and the reaction products include reaction gases and silica dust. The second material may include unreacted and incompletely reacted reactants (reactants include reaction gases such as SiH4), reaction products (including reaction gases and silica dust), and cleaning gas.

[0063] The bypass drive unit 5 is an air pump, and may also include but is not limited to a blower and a compressor. A suitable drive unit can be selected according to the process requirements. For example, for small semiconductor equipment or processes where material retention is not likely to occur, an air pump or blower that provides medium driving force can be set as the bypass drive unit 5; for large semiconductor equipment or processes where material retention is likely to occur, an air pump or compressor that can provide strong driving force can be selected.

[0064] The inventors of this application have further creatively discovered in the process practice that Figure 3 As shown, by arranging a bypass drive unit 5 on the bypass pipeline 4, a driving force can be applied to the second material remaining in the bypass pipeline to accelerate the second material to flow to the discharge pipeline and be discharged through the discharge pipeline (used in conjunction with the main drive unit 13), thereby avoiding the second material being retained in the bypass pipeline 4 and causing the bypass pipeline 4 to be blocked.

[0065] In one example, if Figure 3 As shown, since the reaction products usually accumulate at the interface between the bypass line 4 and the discharge line 3, the bypass drive unit 5 is set at a position close to the discharge line 3, so that the second material driven by the bypass drive unit 5 can flush the interface between the bypass line 4 and the discharge line 3 at a higher speed to avoid the accumulation of reaction products at the interface.

[0066] In some embodiments, the semiconductor device further includes a heating unit (not shown) disposed on bypass line 4. For example, the heating unit may be a heating tube wrapped around the outer wall of the bypass line to avoid occupying space within the bypass line. The provision of the heating unit increases the velocity of the second material within bypass line 4, making it easier for the bypass drive unit 5 to drive the second material into discharge line 3, thereby improving cleaning efficiency.

[0067] The heating unit can heat the entire bypass pipeline 4 or heat a portion of the bypass pipeline 4 .

[0068] In some embodiments, the heating unit is disposed on the bypass pipeline 4 between the bypass drive unit 5 and the discharge pipeline 3 .

[0069] In one example, the electric heating device is provided on the bypass pipeline 4 , and a plurality of electric heating devices are provided to fully cover the bypass pipeline 4 .

[0070] In another example, based on experience, the heating device may be disposed only at locations where blockages often occur. For example, the heating device may be disposed between the bypass drive unit 5 and the discharge pipeline 3 .

[0071] In some embodiments, when the reaction chamber 1 is in a process state, the heating temperature of the heating unit is 120-180° C.; and / or when the reaction chamber 1 is in an idle state, the heating temperature of the heating unit is 45-55° C.

[0072] When reaction chamber 1 is in a process state, the heating unit is set to a relatively high temperature of 120-180°C. Within this temperature range, the reaction products are effectively prevented from solidifying or crystallizing within bypass line 4, ensuring fluidity and making it more difficult for the reaction products to accumulate within bypass line 4 without adversely affecting the semiconductor manufacturing process. When reaction chamber 1 is idle, the heating unit is set to a relatively low temperature of 45-55°C. This temperature range ensures that the reaction products do not completely cool and solidify excessively, reducing energy consumption while still completing basic functions and achieving energy conservation.

[0073] In one example, if Figure 2 As shown, when the reaction chamber 1 is in the process state, the heating temperature of the heating unit is 150°C, which increases the fluidity of the reaction product. When it enters the bypass line 4 along with the first material, the purge of the first material in the bypass line 4 will also drive part of the reaction product to flow out of the bypass line 4, making it more difficult for the reaction product to accumulate in the bypass line 4. When the reaction chamber 1 is in an idle state, as shown Figure 1 As shown, the heating temperature of the heating unit is set to 50°C. At this temperature, the reaction products will not completely cool down and solidify and accumulate in the bypass line 4. At this time, the bypass drive unit 5 with a greater driving force drives the second material to discharge the reaction products from the bypass line 4. In this case, the lower heating temperature also plays a role in energy saving.

[0074] In some embodiments, as Figure 3 As shown, the feed pipeline 2 includes a first feed pipeline 21, which is connected to the reaction chamber 1 and the bypass pipeline 4. The first feed pipeline 21 is configured to transport reaction gas to the reaction chamber 1 when the reaction chamber 1 is in a process state; the bypass pipeline 4 includes a connected main pipeline 42 and a first branch pipeline 41, the end of the main pipeline 42 away from the first branch pipeline 41 is connected to the discharge pipeline 3, and the end of the first branch pipeline 41 away from the main pipeline 42 is connected to the first feed pipeline 21, the bypass drive unit 5 is arranged on the main pipeline 42, and the first branch pipeline 41 is provided with a first valve 6.

[0075] In one example, if Figure 3As shown, the first feed line 21 is further provided with a third valve 8 and a fourth valve 9. The third valve 8 is located at the junction of the first feed line 21 and the first branch line 41, away from the reaction chamber 1. The fourth valve 9 is located at the junction of the first feed line 21 and the first branch line 41, closer to the reaction chamber 1. When the semiconductor device is idle, the third valve 8 is closed, and the reaction gas cannot be passed into the first feed line 21. During trial operation of the semiconductor device, the third valve 8 and the first valve 6 are opened, and the fourth valve 9 is closed, and all the reaction gas will enter the main line 42 of the bypass line 4 through the first branch line 41. During formal operation of the device, the third valve 8 and the fourth valve 9 are opened, and the first valve 6 is closed, and all the reaction gas will enter the reaction chamber 1.

[0076] When the reaction chamber 1 is in the process state, such as Figure 2 and Figure 3 As shown, the first valve 6 is closed, and at least part of the first material in the discharge pipeline 3 enters the bypass pipeline 4 from the end of the main pipeline 42 away from the first branch pipeline 41, circulates in the bypass pipeline 4, and is then discharged through the discharge pipeline 3. When the reaction chamber 1 is in an idle state, as shown in FIG. Figure 1 and Figure 3 As shown, the first valve 6 is opened, and the bypass drive unit 5 is started to suck the reaction gas remaining in the first feed pipeline 21 into the bypass pipeline 4 and apply driving force to the material remaining in the bypass pipeline 4.

[0077] like Figure 2 and Figure 3 As shown, when the reaction chamber 1 is in the process state, a large amount of reaction gas is required. Therefore, the first valve 6 needs to be closed at this time to allow all the reaction gas in the first feed line 21 to enter the reaction chamber 1 for reaction. After the reaction is completed, part of the first material will enter the bypass line 4 during the process of being discharged through the discharge line 3. At this time, since the first valve 6 is in the closed state, this part of the first material will circulate in the bypass line 4 once and then return to the discharge line 3. The first material entering the bypass line 4 will purge the reaction products in the bypass line 4 during the circulation process, so that the reaction products will be purged into the discharge line 3 for discharge, preventing the bypass line 4 from being blocked by the second material.

[0078] like Figure 1 and Figure 3As shown, when the reaction chamber 1 is idle, some first material may remain in the first feed line 21. To prevent the residual first material from leaking and causing environmental pollution or personal injury, the first valve 6 can be opened and the bypass drive unit 5 can be activated while the third valve 8 is closed. The bypass drive unit 5 then draws the first material remaining in the first feed line 21 into the discharge line 3 through the bypass line 4. When the residual first material flows through the bypass line 4, it purges the reaction products in the bypass line 4, increasing the driving force for the reaction products and allowing the second material in the bypass line 4 to enter the discharge pipe, thereby preventing the bypass line 4 from being blocked by the reaction products.

[0079] In one example, if Figure 3 As shown, the first feed line 21 is further provided with a mass flow controller 18, which is disposed on a side of the third valve 8 close to the reaction chamber 1. The mass flow controller 18 can precisely control the amount of the first material introduced into the reaction chamber 1, thereby making the reaction in the reaction chamber 1 more stable and more convenient to control the output, thereby avoiding material waste.

[0080] In some embodiments, as Figure 3 As shown, the feed pipeline 2 also includes a second feed pipeline 22, which is connected to the reaction chamber 1 and the bypass pipeline 4. The second feed pipeline 22 is configured to transport cleaning gas to the reaction chamber 1 and the bypass pipeline 4 when the reaction chamber 1 is in an idle state; the bypass pipeline 4 also includes a second branch 43 connected to the main pipeline 42, and the end of the main pipeline 42 away from the second branch 43 is connected to the discharge pipeline 3, and the end of the second branch 43 away from the main pipeline 42 is connected to the second feed pipeline 22, and a second valve 7 is provided on the second branch 43.

[0081] In one example, if Figure 3As shown, the second feed line 22 is further provided with a fifth valve 10 and a sixth valve 11. The fifth valve 10 is located at the junction of the second feed line 22 and the second branch line 43, away from the reaction chamber 1. The sixth valve 11 is located at the junction of the second feed line 22 and the second branch line 43, closer to the reaction chamber 1. When the fifth valve 10 is closed, the cleaning gas cannot be passed into the second feed line 22. When the fifth valve 10 and the second valve 7 are open and the sixth valve 11 is closed, the cleaning gas will all pass through the second branch line 43 into the main line 42 of the bypass line 4, thereby strongly cleaning the bypass line 4. When the fifth valve 10 and the sixth valve 11 are open and the second valve 7 is closed, the cleaning gas will all enter the reaction chamber 1. When the fifth valve 10, the fourth valve 9, and the second valve 7 are all open, the cleaning gas will enter both the reaction chamber 1, thereby strongly cleaning the reaction chamber, and the bypass line 4. The semiconductor device provided in this embodiment can flexibly combine the above three switching states during a cleaning process, which is conducive to improving cleaning efficiency and cleaning effect.

[0082] like Figure 2 and Figure 3 As shown, when the reaction chamber 1 is in the process state, the second valve 7 is closed, and at least part of the first material in the discharge pipeline 3 enters the bypass pipeline 4 from the end of the main pipeline 42 away from the second branch 43, and is circulated in the bypass pipeline 4 before being discharged through the discharge pipeline 3; when the reaction chamber 1 is in the idle state, as shown Figure 1 and Figure 3 As shown, the second valve 7 is opened, and part of the cleaning gas from the second feed line 22 is used to purge the reaction chamber. At the same time, the bypass drive unit 5 is started to suck part of the cleaning gas from the second feed line 22 into the bypass line 4, and apply driving force to the material remaining in the bypass line 4.

[0083] like Figure 2 and Figure 3 As shown, when the reaction chamber 1 is in the process state, in order to ensure that the gas in the reaction chamber 1 is not discharged from the pipeline other than the discharge pipeline 3, it is necessary to close at least the fifth valve 10 to keep the second feed pipeline 22 and the reaction chamber 1 sealed. After the reaction gas in the reaction chamber 1 is completed, part of the first material will enter the bypass pipeline 4 during the process of being discharged through the discharge pipeline 3. At this time, because the first valve 6 and the second valve 7 are in the closed state, this part of the first material will circulate in the bypass pipeline 4 once and then return to the discharge pipeline 3. The first material entering the bypass pipeline 4 will purge the second material in the bypass pipeline 4 during the circulation process, so that part of the second material will be purged into the discharge pipeline 3 for discharge, thereby preventing the bypass pipeline 4 from being blocked by reaction products.

[0084] like Figure 1 and Figure 3 As shown, when the reaction chamber 1 is in an idle state, the fifth valve 10 and the second valve 7 are opened, and the bypass drive unit 5 is started. At this time, the bypass drive unit 5 will suck the cleaning gas entering the second feed pipeline 22 through the fifth valve 10 into the bypass pipeline 4 through the second branch 43. After the cleaning gas enters the bypass pipeline 4, the reaction products in the bypass pipeline 4 will be purged, so that the reaction products follow the cleaning gas into the discharge pipeline 3 and are discharged, thereby avoiding the bypass pipeline 4 being blocked by the reaction products.

[0085] like Figure 1 and Figure 3 As shown, in one example, when the reaction chamber 1 is idle, the sixth valve 11 can be opened simultaneously to clean the reaction chamber 1. When the sixth valve 11 is opened, a cleaning gas can enter the reaction chamber 1 to purge the first material and the second material remaining in the reaction chamber 1 and purge them into the discharge pipeline 3 for discharge.

[0086] In one example, if Figure 3 As shown, the second feed line 22 is further provided with a seventh valve 19, which is located on the side of the fifth valve 10 close to the reaction chamber 1. The provision of the seventh valve 19 further ensures the sealing of the second feed line 22, preventing some cleaning gas from entering the reaction chamber 1 when the reaction chamber 1 is in a process state due to a loose seal, thereby preventing adverse effects on the reaction.

[0087] The cleaning gas may be any non-toxic gas that does not react with the first material and the second material. In this example, nitrogen is used as the cleaning gas.

[0088] In some embodiments, as Figure 1 As shown, the semiconductor device also includes a waste recovery unit 12, which is arranged at the end of the discharge pipeline 3 and connected to the discharge pipeline 3. A main driving unit 13 is provided on the discharge pipeline 3. The main driving unit 13 is located at one end of the discharge pipeline 3 close to the waste recovery unit 12, and is used to drive the first material and the second material in the discharge pipeline 3 to flow to the waste recovery unit 12.

[0089] In order to achieve effective treatment of discharged materials, such as Figure 1 As shown, in this embodiment, a waste recovery unit 12 is provided at the end of the discharge pipeline 3. Waste recovery unit 12 is connected to the discharge pipeline 3 and can collect and process the discharged first and second materials to prevent them from polluting the environment. At the same time, the main drive unit 13 on the discharge pipeline 3 ensures that the materials are discharged smoothly and effectively recovered.

[0090] The main driving unit 13 may be any device capable of adding driving force to the gas. In this example, the main driving unit 13 is an air pump.

[0091] In some embodiments, as Figure 3 and Figure 4 As shown, the semiconductor device includes a plurality of reaction chambers 1, a plurality of discharge pipes 3, a plurality of bypass pipes 4 and a plurality of main drive units 13 in one-to-one correspondence; wherein the plurality of bypass pipes 4 are arranged in parallel and connected to the same bypass drive unit 5.

[0092] To improve production efficiency, the semiconductor equipment is equipped with multiple reaction chambers 1 and corresponding discharge pipes 3, bypass pipes 4, and main drive units 13. During actual production, the material after the reaction in each reaction chamber 1 enters the corresponding discharge pipe 3 and bypass pipe 4, and then enters the waste recovery unit 12 under the drive of the corresponding main drive unit 13.

[0093] In one example, if Figure 3 and Figure 4 As shown, three reaction chambers 1 are provided (not shown in the figure). Corresponding to the three reaction chambers 1, three discharge pipelines 3, bypass pipelines 4 and main drive units 13 are also provided, namely: a first discharge pipeline 331, a second discharge pipeline 332, and a third discharge pipeline 333; a first bypass pipeline 111, a second bypass pipeline 112, and a third bypass pipeline 113; a first main drive unit 131, a second main drive unit 132, and a third main drive unit 133.

[0094] Take one of the reaction chambers 1 and its corresponding structure as an example for explanation: Figure 4 As shown, when the reaction chamber 1 is in a process state, the first valve 6 and the second valve 7 in the first bypass line 111 are closed, and at least part of the first material in the first discharge line 331 enters the first bypass line 111 from the end of the main line 42 away from the second branch line 43, and is circulated in the first bypass line 111 before being discharged through the first discharge line 331 and entering the waste recovery unit 12 under the drive of the first main drive unit 131; when the reaction chamber 1 is in an idle state, the first valve 6 in the first bypass line 111 is closed. , the second valve 7 is opened, and the bypass drive unit 5 in the first bypass line 111 is started to suck the cleaning gas into the first bypass line 111; when the reaction chamber 1 is in an idle state, the first valve 6 in the first bypass line 111 is opened, the second valve 7 is closed, and the bypass drive unit 5 in the first bypass line 111 is started to suck the reaction gas remaining in the first feed line 21 into the first bypass line 111, and then enters the waste recovery unit 12 through the first discharge line 331 under the drive of the first main drive unit 131.

[0095] In some embodiments, as Figure 3 As shown, the semiconductor device further includes a cooling unit 14 , which is connected to the bypass driving unit 5 and is used to cool the bypass driving unit 5 .

[0096] Since the bypass drive unit 5 generates heat during operation, in order to prevent the bypass drive unit 5 from being damaged due to overheating and affecting its service life, it is necessary to adopt cooling measures for the bypass drive unit 5.

[0097] In one example, the cooling unit 14 is a water cooling device, which absorbs the heat generated by the bypass drive unit 5 by passing cooling water into the bypass drive unit 5 to achieve cooling.

[0098] In one example, the cooling water in the cooling unit 14 is also introduced into the reaction chamber to cool the reaction chamber to prevent the chamber from being damaged or affecting the reaction process due to excessive temperature.

[0099] In some embodiments, as Figure 3 As shown, the semiconductor device also includes:

[0100] The air pressure monitoring unit 15 is provided on the bypass pipeline 4 and is located on the bypass pipeline 4 between the bypass drive unit 5 and the feed pipeline 2;

[0101] The alarm unit 16 is provided on the bypass pipeline 4 and is located on the bypass pipeline 4 between the bypass drive unit 5 and the feed pipeline 2;

[0102] The filter unit 17 is disposed on the bypass pipeline 4 and is located on the bypass pipeline 4 between the air pressure detection unit and / or alarm unit 16 and the bypass drive unit 5 .

[0103] like Figure 3 As shown, the air pressure monitoring unit 15 can detect the state of the bypass line 4 in real time. When the pressure in the bypass line 4 is too high, the alarm unit 16 can promptly issue an alarm to remind the staff to take action, thereby avoiding equipment damage or production accidents caused by line blockage or other faults. In order to ensure the normal operation of the bypass drive unit 5, a filter unit 17 is provided on the bypass line 4 between the air pressure detection unit and / or the alarm unit 16 and the bypass drive unit 5. The filter unit 17 can filter the gas entering the bypass drive unit 5 to prevent solid impurities from entering and affecting the normal operation of the bypass drive unit 5.

[0104] In an exemplary embodiment of the present disclosure, a method for cleaning a semiconductor device is provided, comprising:

[0105] Step S110, connecting the bypass pipeline between the feed pipeline and the discharge pipeline;

[0106] Step S120: Start the bypass drive unit provided on the bypass pipeline.

[0107] Among them, the bypass drive unit 5 in the started state is configured to: apply driving force to the second material remaining in the bypass pipeline 4 to accelerate the second material to flow to the discharge pipeline 3 and be discharged through the discharge pipeline 3, so as to avoid the second material being retained in the bypass pipeline 4 and causing the bypass pipeline 4 to be blocked.

[0108] like Figure 3 As shown, after the first material enters the reaction chamber 1 and reacts, the remaining unreacted first material will be discharged through the discharge pipe 3. When the remaining first material enters the discharge pipe 3, the second material produced by the reaction of the first material in the reaction chamber 1 will follow it into the discharge pipe 3. At this time, since the bypass pipe 4 is connected to the discharge pipe 3, part of the second material will enter the bypass pipe 4 and accumulate at the interface between the bypass pipe 4 and the discharge pipe 3, thereby causing the bypass pipe 4 to be blocked. By providing a bypass drive unit 5 on the bypass pipe 4, a driving force can be applied to the second material accumulated at the interface between the bypass pipe 4 and the discharge pipe 3, allowing the second material to re-enter the discharge pipe 3, thereby avoiding blockage of the bypass pipe 4.

[0109] In some embodiments, the semiconductor device further includes a heating unit, which is disposed on the bypass line 4 between the bypass drive unit 5 and the discharge line 3. The cleaning method further includes:

[0110] Step S130: When the bypass drive unit is started, the heating unit is turned on. The heating effect of the heating unit can further improve the fluidity of the second material, enhance the cleaning effect, and ensure that the reaction products in the bypass pipeline can be completely removed.

[0111] In one example, if Figure 3 As shown, when the reaction chamber 1 is in a process state, the heating unit is heated to 150°C, increasing the fluidity of the second material. When it enters the bypass line 4 along with the first material, the purge of the first material within the bypass line 4 also drives some reaction products out of the bypass line 4, making it more difficult for the reaction products to accumulate in the bypass line 4. When the reaction chamber 1 is idle, the heating unit is heated to 50°C. At this temperature, the reaction products will not completely cool and solidify and accumulate in the bypass line 4. At this time, the bypass drive unit 5 with a greater driving force drives the second material to discharge the reaction products out of the bypass line 4. In this case, the lower heating temperature also saves energy.

[0112] In some embodiments, as Figure 3As shown, the feed pipeline 2 includes a first feed pipeline 21, which is connected to the reaction chamber 1 and the bypass pipeline 4. The first feed pipeline 21 is configured to transport reaction gas to the reaction chamber 1 when the reaction chamber 1 is in a process state; the bypass pipeline 4 includes a main pipeline 42 and a first branch pipeline 41 connected to each other. The end of the main pipeline 42 away from the first branch pipeline 41 is connected to the discharge pipeline 3, and the end of the first branch pipeline 41 away from the main pipeline 42 is connected to the first feed pipeline 21. The bypass drive unit 5 is provided on the main pipeline 42, and the first branch pipeline 41 is provided with a first valve 6.

[0113] Cleaning methods also include:

[0114] Step S220: When the reaction chamber is in a process state, the first valve is closed, and a reaction gas is supplied to the reaction chamber through the first feed line. The bypass drive unit is closed, and at least a portion of the first material in the discharge line enters the bypass line through the end of the main line away from the first branch line, circulates in the bypass line, and is then discharged through the discharge line.

[0115] When the reaction chamber is in an idle state, the reaction gas is stopped from being introduced into the first feed pipeline, the first valve is opened and the bypass drive unit is started. The bypass drive unit is used to suck the reaction gas remaining in the first feed pipeline into the bypass pipeline, and a driving force is applied to the material remaining in the bypass pipeline.

[0116] In one example, if Figure 2 and Figure 3 As shown, the reaction chamber 1 is in a process state. At this time, the first valve 6, the second valve 7, and all valves on the second feed line 22 are closed, allowing all the reaction gas in the first feed line 21 to enter the reaction chamber 1 for reaction. After the reaction is completed, part of the first material will enter the bypass line 4 during the process of being discharged through the discharge line 3. At this time, since the first valve 6 and the second valve 7 are in the closed state, this part of the first material will circulate in the bypass line 4 once and then return to the discharge line 3. The first material entering the bypass line 4 will purge the reaction products in the bypass line 4 during the circulation process, so that part of the reaction products will be purged into the discharge line 3 for discharge, thereby preventing the bypass line 4 from being blocked by the reaction products.

[0117] In one example, if Figure 1 and Figure 3As shown, the reaction chamber 1 is in an idle state, and some first material still remains in the first feed line 21. At this time, the first valve 6 is opened, and the second valve 7 and all valves on the second feed line 22 remain closed. Then, the bypass drive unit 5 is activated, and the first material remaining in the first feed line 21 is sucked into the discharge line 3 through the bypass line 4 by the bypass drive unit 5. When the residual first material flows through the bypass line 4, it will purge the reaction products in the bypass line 4, increasing the driving force for it, so that the reaction products in the bypass line 4 enter the discharge pipe, preventing the bypass line 4 from being blocked by the second material.

[0118] In some embodiments, as Figure 3 As shown, the feed pipeline 2 further includes a second feed pipeline 22, which is connected to the reaction chamber 1 and the bypass pipeline 4. The second feed pipeline 22 is configured to deliver cleaning gas to the reaction chamber 1 and the bypass pipeline 4 when the reaction chamber 1 is in an idle state. The bypass pipeline 4 further includes a second branch 43 connected to the main pipeline 42. An end of the main pipeline 42 away from the second branch 43 is connected to the discharge pipeline 3, and an end of the second branch 43 away from the main pipeline 42 is connected to the second feed pipeline 22. A second valve 7 is provided on the second branch 43.

[0119] Cleaning methods also include:

[0120] Step S320: When the reaction chamber is in an idle state, the second valve is opened to introduce cleaning gas into the second feed line, and the bypass drive unit is activated to draw a portion of the cleaning gas from the second feed line into the bypass line, thereby applying a driving force to the material remaining in the bypass line.

[0121] When the reaction chamber is in the process state, the second valve is closed, the supply of cleaning gas into the second feed pipeline is stopped, the bypass drive unit is turned off, and at least part of the first material in the discharge pipeline enters the bypass pipeline from the end of the main pipeline away from the second branch pipeline, circulates in the bypass pipeline, and is then discharged through the discharge pipeline.

[0122] In one example, if Figure 1 and Figure 3As shown, the reaction chamber 1 is in an idle state. At this time, the first valve 6 and all valves on the first feed line 21 are closed, and the second valve 7 and all valves on the second feed line 22 are opened. Then, the bypass drive unit 5 is started. At this time, the bypass drive unit 5 will draw the cleaning gas entering the second feed line 22 through the fifth valve 10 into the bypass line 4 through the second branch 43. When the cleaning gas enters the bypass line 4, it will purge the reaction products in the bypass line 4, causing them to follow the cleaning gas into the discharge line 3 and be discharged, thereby preventing the bypass line 4 from being blocked by the reaction products. At the same time, the cleaning gas will also enter the reaction chamber 1 for purging, and purge the first material and second material remaining in the reaction chamber 1 into the discharge line 3 for discharge.

[0123] In one example, if Figure 2 and Figure 3 As shown, the reaction chamber 1 is in a process state. At this time, the first valve 6, the second valve 7, and all valves on the second feed line 22 are closed, allowing all the reaction gas in the first feed line 21 to enter the reaction chamber 1 for reaction. After the reaction is completed, part of the unreacted first material will enter the bypass line 4 during the process of being discharged through the discharge line 3. At this time, since the first valve 6 and the second valve 7 are in the closed state, this part of the first material will circulate in the bypass line 4 once and then return to the discharge line 3. The first material entering the bypass line 4 will purge the reaction products in the bypass line 4 during the circulation process, so that a part of the reaction products will be purged into the discharge line 3 for discharge, thereby preventing the bypass line 4 from being blocked by the reaction products.

[0124] The various embodiments or implementation methods in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referenced to each other.

[0125] In the description of this specification, reference to the terms "embodiment", "exemplary embodiment", "some embodiments", "illustrative embodiment", "example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure.

[0126] In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any suitable manner in any one or more embodiments or examples.

[0127] In the description of the present disclosure, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on the present disclosure.

[0128] It is to be understood that the terms "first", "second", etc. used in the present disclosure can be used to describe various structures in the present disclosure, but these structures are not limited by these terms. These terms are only used to distinguish a first structure from another structure.

[0129] In one or more of the accompanying drawings, identical elements are represented by similar reference numerals. For clarity, many parts in the accompanying drawings are not drawn to scale. In addition, certain well-known parts may not be shown. For simplicity, a structure obtained after several steps may be described in a single figure. Many specific details of the present disclosure, such as device structure, materials, dimensions, processing techniques, and technologies, are described below to facilitate a clearer understanding of the present disclosure. However, as will be appreciated by those skilled in the art, the present disclosure may be practiced without following these specific details.

[0130] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A semiconductor device, characterized in that: include: reaction chamber; a feed pipeline connected to the reaction chamber; a discharge pipeline connected to the reaction chamber, the discharge pipeline being used to discharge the first material remaining in the reaction chamber; A bypass pipeline, wherein both ends of the bypass pipeline are respectively connected to the feed pipeline and the discharge pipeline, and a bypass drive unit is provided on the bypass pipeline, and the bypass drive unit is configured to: when the bypass pipeline is in a conducting state, apply a driving force to the second material remaining in the bypass pipeline to accelerate the second material to flow to the discharge pipeline and be discharged through the discharge pipeline, so as to avoid the second material being retained in the bypass pipeline and causing the bypass pipeline to be blocked.

2. The semiconductor device according to claim 1, wherein The semiconductor device further includes a heating unit, which is disposed on the bypass pipeline.

3. The semiconductor device according to claim 2, wherein: The heating unit is arranged on the bypass pipeline between the bypass driving unit and the discharge pipeline.

4. The semiconductor device according to claim 3, wherein When the reaction chamber is in a process state, the heating temperature of the heating unit is 120-180° C.; and / or, When the reaction chamber is in an idle state, the heating temperature of the heating unit is 45-55°C.

5. The semiconductor device according to any one of claims 1 to 4, wherein: The feed pipeline includes a first feed pipeline, the first feed pipeline is connected to the reaction chamber and the bypass pipeline, and the first feed pipeline is configured to transport reaction gas to the reaction chamber when the reaction chamber is in a process state; the bypass pipeline includes a main pipeline and a first branch pipeline connected to each other, an end of the main pipeline away from the first branch pipeline is connected to the discharge pipeline, and an end of the first branch pipeline away from the main pipeline is connected to the first feed pipeline, the bypass drive unit is disposed on the main pipeline, and a first valve is disposed on the first branch pipeline; Wherein, when the reaction chamber is in a process state, the first valve is closed, and at least part of the first material in the discharge pipeline enters the bypass pipeline from the end of the main pipeline away from the first branch pipeline, circulates in the bypass pipeline, and is then discharged through the discharge pipeline; and / or, When the reaction chamber is in an idle state, the first valve is opened, and the bypass driving unit is activated to suck the reaction gas remaining in the first feed line into the bypass line and apply driving force to the material remaining in the bypass line.

6. The semiconductor device according to claim 5, wherein The feed pipeline further includes a second feed pipeline connected to the reaction chamber and the bypass pipeline, and the second feed pipeline is configured to deliver a cleaning gas to the reaction chamber and / or the bypass pipeline when the reaction chamber is in an idle state; The bypass pipeline further includes a second branch connected to the main pipeline, an end of the main pipeline away from the second branch is connected to the discharge pipeline, an end of the second branch away from the main pipeline is connected to the second feed pipeline, and a second valve is provided on the second branch; Wherein, when the reaction chamber is in a process state, the second valve is closed, and at least part of the first material in the discharge pipeline enters the bypass pipeline from the end of the main pipeline away from the second branch pipeline, circulates in the bypass pipeline, and is then discharged through the discharge pipeline; and / or, When the reaction chamber is in an idle state, the second valve is opened, and the bypass driving unit is activated to suck part of the cleaning gas from the second feed pipeline into the bypass pipeline and apply driving force to the material remaining in the bypass pipeline.

7. The semiconductor device according to claim 6, wherein: The bypass driving unit is arranged on the main road.

8. The semiconductor device according to any one of claims 1 to 4, wherein: The semiconductor device also includes a waste recovery unit, which is arranged at the end of the discharge pipeline and connected to the discharge pipeline. A main drive unit is provided on the discharge pipeline. The main drive unit is located at one end of the discharge pipeline close to the waste recovery unit and is used to drive the first material in the discharge pipeline to flow to the waste recovery unit.

9. The semiconductor device according to claim 8, wherein The semiconductor device includes a plurality of reaction chambers, a plurality of discharge pipes, a plurality of bypass pipes and a plurality of main drive units corresponding to each other; Wherein, a plurality of the bypass pipelines are arranged in parallel and connected to the same bypass drive unit.

10. The semiconductor device according to any one of claims 1 to 4, wherein: The semiconductor device further includes a cooling unit connected to the bypass driving unit and configured to cool the bypass driving unit.

11. The semiconductor device according to any one of claims 1 to 4, wherein: The semiconductor device further includes: an air pressure monitoring unit, provided on the bypass pipeline and located on the bypass pipeline between the bypass drive unit and the feed pipeline; an alarm unit, provided on the bypass pipeline and located on the bypass pipeline between the bypass drive unit and the feed pipeline; The filter unit is provided in the bypass pipeline and is located on the bypass pipeline between the air pressure detection unit and / or the alarm unit and the bypass drive unit.

12. A method for cleaning a semiconductor device, characterized in that: The semiconductor device according to any one of claims 1 to 11, comprising: Conductively connecting the bypass pipeline between the feed pipeline and the discharge pipeline; Starting the bypass drive unit provided on the bypass pipeline; Among them, the bypass drive unit in the started state is configured to: apply driving force to the second material remaining in the bypass pipeline to accelerate the second material to flow to the discharge pipeline and be discharged through the discharge pipeline, so as to avoid the second material being retained in the bypass pipeline and causing blockage of the bypass pipeline.

13. The method for cleaning a semiconductor device according to claim 12, wherein: The semiconductor device further includes a heating unit, which is disposed on the bypass pipeline between the bypass drive unit and the discharge pipeline. The cleaning method further includes: When the bypass drive unit is started, the heating unit is turned on.

14. The method for cleaning a semiconductor device according to claim 12, wherein: The feed pipeline includes a first feed pipeline, the first feed pipeline is connected to the reaction chamber and the bypass pipeline, and the first feed pipeline is configured to transport reaction gas to the reaction chamber when the reaction chamber is in a process state; the bypass pipeline includes a main pipeline and a first branch pipeline connected to each other, an end of the main pipeline away from the first branch pipeline is connected to the discharge pipeline, and an end of the first branch pipeline away from the main pipeline is connected to the first feed pipeline, the bypass drive unit is disposed on the main pipeline, and a first valve is disposed on the first branch pipeline; The cleaning method further comprises: When the reaction chamber is in a process state, the first valve is closed, reaction gas is supplied into the reaction chamber through the first feed pipeline, the bypass drive unit is closed, and at least part of the first material in the discharge pipeline enters the bypass pipeline through the end of the main pipeline away from the first branch pipeline, circulates in the bypass pipeline, and is then discharged through the discharge pipeline; When the reaction chamber is in an idle state, the reaction gas is stopped from being introduced into the first feed pipeline, the first valve is opened, and the bypass drive unit is started. The bypass drive unit is used to suck the reaction gas remaining in the first feed pipeline into the bypass pipeline, and exert a driving force on the material remaining in the bypass pipeline.

15. The method for cleaning a semiconductor device according to claim 14, wherein: The feed pipeline further includes a second feed pipeline, the second feed pipeline being connected to the reaction chamber and the bypass pipeline, and the second feed pipeline being configured to deliver a cleaning gas to the reaction chamber and / or the bypass pipeline when the reaction chamber is in an idle state; the bypass pipeline further includes a second branch connected to the main pipeline, an end of the main pipeline remote from the second branch being connected to the discharge pipeline, and an end of the second branch being remote from the main pipeline being connected to the second feed pipeline, and a second valve being provided on the second branch; The cleaning method further comprises: When the reaction chamber is in an idle state, the second valve is opened to introduce cleaning gas into the second feed pipeline, the bypass drive unit is activated, and a portion of the cleaning gas from the second feed pipeline is sucked into the bypass pipeline by the bypass drive unit, thereby applying a driving force to the material remaining in the bypass pipeline; When the reaction chamber is in a process state, the second valve is closed, the supply of cleaning gas into the second feed pipeline is stopped, and the bypass drive unit is turned off. At least part of the first material in the discharge pipeline enters the bypass pipeline from the end of the main pipeline away from the second branch pipeline, circulates in the bypass pipeline, and is then discharged through the discharge pipeline.

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