A composite material for LED explosion-proof lights and LED explosion-proof lights

Abstract

This invention discloses a composite material for LED explosion-proof lights, comprising: a first layer deposited on a substrate, the first layer being an AZO layer doped with Gd and Co; a second layer deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe; a third layer deposited on the second layer, the third layer being an AZO layer doped with Gd and Fe; a fourth layer deposited on the third layer, the fourth layer being an AZO layer doped with La and Ni; and a fifth layer deposited on the fourth layer, the fifth layer being an AZO layer doped with La and Co. The composite AZO film of this invention exhibits both low resistivity and high light transmittance.

Description

Technical Field

[0001] This invention relates to the field of layered materials technology, and in particular to a composite material for LED explosion-proof lights and the LED explosion-proof light itself. Background Technology

[0002] Some LED explosion-proof lights use polycarbonate (PC) or acrylic materials for their lampshades. As market competition intensifies, users are placing higher demands on LED explosion-proof light products. For example, some users operate LED explosion-proof lights in high-temperature and high-humidity environments, requiring the lampshades to have defogging capabilities. Aluminum-doped zinc oxide (AZO) film is a widely used transparent conductive film. Coating polycarbonate (PC) or acrylic with an AZO film can give the LED explosion-proof light lampshade a defogging function. However, existing AZO films have low resistivity, which cannot meet the requirement for rapid defogging. Doping with metal elements can reduce the resistivity of the AZO film, but ensuring that the light transmittance of the AZO film does not decrease after metal doping remains a challenge for the industry. Summary of the Invention

[0003] To address the problems of existing technologies, this invention proposes a composite material for LED explosion-proof lights. The composite material proposed in this invention comprises multiple AZO layers with specific doping elements. Through film layer structure design, co-doping of transition metal elements and rare earth elements, and by adjusting the types and ratios of rare earth elements and transition metal elements in each layer, the composite AZO film of this invention has a low resistivity and a high light transmittance.

[0004] This invention provides a composite material for LED explosion-proof lights, comprising:

[0005] The first layer deposited on the substrate is an AZO layer doped with Gd and Co;

[0006] The second layer is deposited on top of the first layer; the second layer is an AZO layer doped with Ce and Fe.

[0007] The third layer is deposited on the second layer; the third layer is an AZO layer doped with Gd and Fe.

[0008] A fourth layer, deposited on top of the third layer, is an AZO layer doped with La and Ni; and

[0009] The fifth layer is deposited on top of the fourth layer; the fifth layer is an AZO layer doped with La and Co.

[0010] In a preferred embodiment, the target material for depositing the first layer is an AZO target doped with Gd and Co, wherein the Gd content in the AZO target doped with Gd and Co is 0.8-1.2 wt%, the Co content is 1.0-1.6 wt%, the Al content is 1.5-2.5 wt%, and the balance is ZnO.

[0011] In a preferred embodiment, the specific process for depositing the first layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150℃, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

[0012] In a preferred embodiment, the specific process for depositing the second layer is as follows: the deposition target is an AZO target doped with Ce and Fe, wherein the Ce content in the Ce and Fe doped AZO target is 0.5-0.8 wt%, the Fe content is 0.8-1.2 wt%, the Al content is 2.5-3.2 wt%, and the balance is ZnO; the magnetron sputtering power supply is an RF power supply with a sputtering voltage of 10-20V, a sputtering power of 40-50W, a sputtering temperature of 100-150℃, and an argon atmosphere with an argon flow rate of 30-40 sccm.

[0013] In a preferred embodiment, the specific process for depositing the third layer is as follows: the deposition target is an AZO target doped with Gd and Fe, wherein the Gd content in the AZO target doped with Gd and Fe is 0.6-1.0 wt%, the Fe content is 0.5-0.9 wt%, the Al content is 1.5-2.5 wt%, and the balance is ZnO; the magnetron sputtering power supply is an RF power supply with a sputtering voltage of 10-20V, a sputtering power of 25-40W, a sputtering temperature of 100-150℃, and an argon atmosphere with an argon flow rate of 30-40 sccm.

[0014] In a preferred embodiment, the specific process for depositing the fourth layer is as follows: the deposition target is an AZO target doped with La and Ni, wherein the La content is 0.3-0.6 wt%, the Ni content is 1.0-1.6 wt%, the Al content is 1.5-2.5 wt%, and the balance is ZnO; the magnetron sputtering power supply is an RF power supply with a sputtering voltage of 10-20V, a sputtering power of 25-40W, a sputtering temperature of 100-150℃, and an argon atmosphere with an argon flow rate of 30-40 sccm.

[0015] In a preferred embodiment, the specific process for depositing the fifth layer is as follows: the deposition target is an AZO target doped with La and Co, wherein the La content in the La and Co doped AZO target is 0.3-0.6 wt%, the Co content is 0.9-1.3 wt%, the Al content is 2.5-3.2 wt%, and the balance is ZnO; the magnetron sputtering power supply is an RF power supply with a sputtering voltage of 10-20V, a sputtering power of 25-40W, a sputtering temperature of 100-150℃, and an argon atmosphere with an argon flow rate of 30-40 sccm.

[0016] In a preferred embodiment, the thickness of the first layer is 20-30 nm, the thickness of the second layer is 20-30 nm, the thickness of the third layer is 20-30 nm, the thickness of the fourth layer is 20-30 nm, and the thickness of the fifth layer is 20-30 nm.

[0017] The present invention also provides an LED explosion-proof lamp, wherein the lampshade of the LED explosion-proof lamp uses the composite material as described above.

[0018] Compared with the prior art, the present invention has the following advantages: the composite material proposed in the present invention includes multiple AZO layers with specific doping elements. Through the design of the film layer structure, the co-doping of transition metal elements and rare earth elements, and by adjusting the types and ratios of rare earth elements and transition metal elements in each layer, the composite AZO film of the present invention has a low resistivity and a high transmittance. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the membrane structure according to an embodiment of the present invention.

[0020] Figure 2 This is a TEM photograph of an embodiment of the present invention.

[0021] Figure 3 This is a transmittance variation trend graph of one embodiment of the present invention.

[0022] Figure 4 This is a TEM photograph of another embodiment of the present invention.

[0023] Figure 5 This is a transmittance variation trend graph of another embodiment of the present invention. Detailed Implementation

[0024] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings, but it should be understood that the scope of protection of the present invention is not limited to the specific embodiments.

[0025] Figure 1This is a schematic diagram of the film structure of one embodiment of the present invention. As shown in the figure, the composite material for LED explosion-proof lights of the present invention sequentially includes a substrate, a first layer, a second layer, a third layer, a fourth layer, and a fifth layer. The substrate may be polycarbonate. For the sake of comparability, unless otherwise taught, the substrate material in all embodiments and comparative examples of the present invention is selected as polycarbonate.

[0026] Example 1

[0027] A composite material for use in LED explosion-proof lights includes: a first layer deposited on a substrate, the first layer being an AZO layer doped with Gd and Co; a second layer deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe; a third layer deposited on the second layer, the third layer being an AZO layer doped with Gd and Fe; a fourth layer deposited on the third layer, the fourth layer being an AZO layer doped with La and Ni; and a fifth layer deposited on the fourth layer, the fifth layer being an AZO layer doped with La and Co.

[0028] The target material for the first deposition layer is an AZO target doped with Gd and Co. Specifically, the Gd content in the Gd and Co doped AZO target is 0.8 wt%, the Co content is 1.0 wt%, the Al content is 1.5 wt%, and the balance is ZnO. The Gd and Co doped AZO target can be manufactured using powder metallurgy processes known in the art. This process generally includes the following steps: first, ZnO, Al, Gd, and Co are weighed according to a specific ratio; then, ZnO, Al, Gd, and Co are mixed uniformly by, for example, ball milling; finally, the raw materials are sintered into a Gd and Co doped AZO target using a vacuum high-temperature sintering process. The specific parameters of the aforementioned process are all known in the art, or those skilled in the art can obtain the specific parameters of the aforementioned process through a limited number of experiments; therefore, they will not be elaborated further in this invention. All targets used in this invention were purchased from Dongchen Xianrui New Materials Co., Ltd.

[0029] The specific process for depositing the first layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10V, the sputtering power is 25W, the sputtering temperature is 100℃, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm. Unless otherwise indicated, the magnetron sputtering equipment used in all embodiments and comparative examples of this invention is the CK450 magnetron coating machine manufactured by Shenyang Pengcheng Vacuum Technology Co., Ltd.

[0030] The specific process for depositing the second layer is as follows: The deposition target is an AZO target doped with Ce and Fe, wherein the Ce content is 0.5wt%, the Fe content is 0.8wt%, the Al content is 2.5wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply with a sputtering voltage of 10V, a sputtering power of 40W, a sputtering temperature of 100℃, and an argon atmosphere with an argon flow rate of 30sccm.

[0031] The specific process for depositing the third layer is as follows: The deposition target is an AZO target doped with Gd and Fe, wherein the Gd content is 0.6wt%, the Fe content is 0.5wt%, the Al content is 1.5wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply with a sputtering voltage of 10V, a sputtering power of 25W, a sputtering temperature of 100℃, and an argon atmosphere with an argon flow rate of 30sccm.

[0032] The specific process for depositing the fourth layer is as follows: The deposition target is an AZO target doped with La and Ni, wherein the La content is 0.3wt%, the Ni content is 1.0wt%, the Al content is 1.5wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply with a sputtering voltage of 10V, a sputtering power of 25W, a sputtering temperature of 100℃, and an argon atmosphere with an argon flow rate of 30sccm.

[0033] The specific process for depositing the fifth layer is as follows: The deposition target is an AZO target doped with La and Co. In the AZO target doped with La and Co, the La content is 0.3wt%, the Co content is 0.9wt%, the Al content is 2.5wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply with a sputtering voltage of 10V, a sputtering power of 25W, a sputtering temperature of 100℃, and an argon atmosphere with an argon flow rate of 30sccm.

[0034] The thickness of the first layer is 20nm, the thickness of the second layer is 20nm, the thickness of the third layer is 20nm, the thickness of the fourth layer is 20nm, and the thickness of the fifth layer is 20nm.

[0035] The TEM image of Example 1 can be found in [reference needed]. Figure 2 The TEM sample preparation method is briefly described as follows: First, the substrate is polished from one side using methods such as sandpaper. When the sample thickness is reduced to a certain level, the sample is placed in an ion thinning machine for ion thinning, thereby obtaining the TEM sample. Figure 2 It can be seen that a nanocrystalline structure exists in Example 1.

[0036] The transmittance trend of Example 1 as a function of wavelength is shown in the figure below. Figure 3 As can be seen from the figure, the maximum transmittance of Example 1 can reach 87%, and the decrease in transmittance is not significant as the wavelength increases. The transmittance experiment in Example 1 can be explained as follows: From a solid-state physics perspective, the mechanism by which rare earth elements (Gd / La / Ce) and transition metals (Co / Fe / Ni) maintain high transmittance in this multilayer structure through low-concentration synergistic doping (all <1.6wt%) lies in the fact that the 4f energy level of the rare earth elements and the 3d energy level of the transition metals are both located deep within the band gap of ZnO or in the ultraviolet region (>3.3eV), avoiding electronic transition absorption in the visible light band (1.6-3.1eV); simultaneously, the charge compensation effect between the free electrons provided by Al³⁺ and rare earth ions (such as La³⁺ / Gd³⁺) effectively suppresses the deep-level recombination centers formed by transition metals (such as Co²⁺ / Ni²⁺), reducing carrier scattering losses; and dopants with ionic radii similar to Zn²⁺ (0.74Å) (such as Gd³⁺: 1.05Å, Co²⁺ (0.745 Å) ensures a lattice distortion rate of <5%, guaranteeing lattice integrity and reducing photon scattering. The gradient doping combination of each layer widens the bandgap, neutralizes defect charges, and utilizes multilayer interference effects to shift the impurity absorption edge to the ultraviolet region (λ < 380 nm) and compress visible light reflection, ultimately improving the overall transmittance.

[0037] The resistivity of Example 1 is 7.7 × 10⁻⁶. -4 Ωcm, carrier mobility 30.3cm 2 / VS, carrier concentration is 4.0×10 20 / cm 3It can be seen that the resistivity of Example 1 is low, which can effectively ensure rapid demisting. The test methods for resistivity, carrier mobility and carrier concentration of Example 1 are in accordance with the authorized patent CN105931960B. The transmittance experiment in Example 1 can be explained as follows: From a solid-state physics perspective, the synergistic doping of rare earth elements (Gd / La / Ce) and transition metals (Co / Fe / Ni) in this multilayer structure enhances carrier transport performance through a triple mechanism: Rare earth elements (such as La³⁺ and Gd³⁺) stabilize the valence states of transition metal ions (such as Co²⁺ / Co³⁺ and Ni²⁺ / Ni³⁺) through charge compensation, promoting the formation of shallow donor states of transition metals in the ZnO lattice and significantly increasing the concentration of free electrons; simultaneously, the large radius of rare earth ions (La³⁺: 1.06 Å, Gd³⁺: 1.05 Å) locally expands the lattice, neutralizing the lattice distortion caused by Al³⁺ (0.53 Å) replacing Zn²⁺ (0.74 Å), reducing ionized impurity scattering, while the transition metals (Fe³⁺: 0.645 Å, ...) synergistically enhance carrier transport performance through a triple mechanism: Rare earth elements (such as La³⁺ and Gd³⁺) stabilize the valence states of transition metal ions (such as Co²⁺ / Co³⁺ and Ni²⁺ / Ni³⁺), neutralizing the valence states of transition metals (such as Co²⁺ / Co³⁺ and Ni²⁺ / Ni³⁺), reducing the scattering of ionized impurities, while the large radius of rare earth ions (La³⁺: 1.06 Å, Gd³⁺: 1.05 Å) neutralize the lattice distortion caused by Al³⁺ (0.53 Å) replacing Zn²⁺ (0.74 Å), reducing ionized impurity scattering, while the large radius of rare earth ions (such as La³� The size matching (lattice mismatch <6%) between Co²⁺ (0.745Å) and Zn²⁺ further suppresses grain boundary scattering; the gradient Al content and doping combination of each layer (such as the second layer with high Al-Ce / Fe to broaden the conduction band and the fifth layer with La / Co to optimize the carrier distribution) form a directional band tilt, driving the directional migration of carriers.

[0038] Example 2

[0039] A composite material for use in LED explosion-proof lights includes: a first layer deposited on a substrate, the first layer being an AZO layer doped with Gd and Co; a second layer deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe; a third layer deposited on the second layer, the third layer being an AZO layer doped with Gd and Fe; a fourth layer deposited on the third layer, the fourth layer being an AZO layer doped with La and Ni; and a fifth layer deposited on the fourth layer, the fifth layer being an AZO layer doped with La and Co.

[0040] The target material for the first deposition layer is an AZO target doped with Gd and Co. In the AZO target doped with Gd and Co, the Gd content is 1.2 wt%, the Co content is 1.6 wt%, the Al content is 2.5 wt%, and the balance is ZnO.

[0041] The specific process for depositing the first layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 20V, the sputtering power is 40W, the sputtering temperature is 150℃, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0042] The specific process for depositing the second layer is as follows: The deposition target is an AZO target doped with Ce and Fe, wherein the Ce content is 0.8wt%, the Fe content is 1.2wt%, the Al content is 3.2wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply with a sputtering voltage of 20V, a sputtering power of 50W, a sputtering temperature of 150℃, and an argon atmosphere with an argon flow rate of 30sccm.

[0043] The specific process for depositing the third layer is as follows: The deposition target is an AZO target doped with Gd and Fe, wherein the Gd content is 1.0 wt%, the Fe content is 0.9 wt%, the Al content is 2.5 wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply with a sputtering voltage of 20V, a sputtering power of 40W, a sputtering temperature of 150℃, and an argon atmosphere with an argon flow rate of 30 sccm.

[0044] The specific process for depositing the fourth layer is as follows: The deposition target is an AZO target doped with La and Ni, wherein the La content is 0.6wt%, the Ni content is 1.6wt%, the Al content is 2.5wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply with a sputtering voltage of 20V, a sputtering power of 40W, a sputtering temperature of 150℃, and an argon atmosphere with an argon flow rate of 30sccm.

[0045] The specific process for depositing the fifth layer is as follows: The deposition target is an AZO target doped with La and Co. In the AZO target doped with La and Co, the La content is 0.6 wt%, the Co content is 1.3 wt%, the Al content is 3.2 wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply with a sputtering voltage of 20V, a sputtering power of 40W, a sputtering temperature of 150℃, and an argon atmosphere with an argon flow rate of 30 sccm.

[0046] The thickness of the first layer is 30nm, the thickness of the second layer is 30nm, the thickness of the third layer is 30nm, the thickness of the fourth layer is 30nm, and the thickness of the fifth layer is 30nm.

[0047] The TEM image of Example 2 can be found in [reference needed]. Figure 4 .

[0048] The transmittance as a function of wavelength trend in Example 2 can be found in the graph. Figure 5 As can be seen from the figure, the maximum transmittance of Example 2 can reach 86%, and the decrease in transmittance is not significant with increasing wavelength. The resistivity of Example 1 is 7.4 × 10⁻⁶. -4 Ωcm, carrier mobility 31.3cm2 / VS, carrier concentration is 4.2×10 20 / cm 3 .

[0049] Example 3

[0050] A composite material for use in LED explosion-proof lights includes: a first layer deposited on a substrate, the first layer being an AZO layer doped with Gd and Co; a second layer deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe; a third layer deposited on the second layer, the third layer being an AZO layer doped with Gd and Fe; a fourth layer deposited on the third layer, the fourth layer being an AZO layer doped with La and Ni; and a fifth layer deposited on the fourth layer, the fifth layer being an AZO layer doped with La and Co.

[0051] The target material for the first deposition layer is an AZO target doped with Gd and Co, wherein the Gd content is 1 wt%, the Co content is 1.3 wt%, the Al content is 2 wt%, and the balance is ZnO.

[0052] The specific process for depositing the first layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 15V, the sputtering power is 30W, the sputtering temperature is 120℃, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0053] The specific process for depositing the second layer is as follows: The deposition target is an AZO target doped with Ce and Fe, wherein the Ce content is 0.7wt%, the Fe content is 1wt%, the Al content is 3wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply with a sputtering voltage of 15V, a sputtering power of 45W, a sputtering temperature of 120℃, and an argon atmosphere with an argon flow rate of 30sccm.

[0054] The specific process for depositing the third layer is as follows: The deposition target is an AZO target doped with Gd and Fe, wherein the Gd content is 0.8wt%, the Fe content is 0.6wt%, the Al content is 2wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply with a sputtering voltage of 15V, a sputtering power of 30W, a sputtering temperature of 120℃, and an argon atmosphere with an argon flow rate of 30sccm.

[0055] The specific process for depositing the fourth layer is as follows: The deposition target is an AZO target doped with La and Ni, wherein the La content is 0.5wt%, the Ni content is 1.3wt%, the Al content is 2wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply with a sputtering voltage of 15V, a sputtering power of 30W, a sputtering temperature of 120℃, and an argon atmosphere with an argon flow rate of 30sccm.

[0056] The specific process for depositing the fifth layer is as follows: The deposition target is an AZO target doped with La and Co. In the AZO target doped with La and Co, the La content is 0.5wt%, the Co content is 1.2wt%, the Al content is 3wt%, and the balance is ZnO. The magnetron sputtering power supply is an RF power supply with a sputtering voltage of 15V, a sputtering power of 30W, a sputtering temperature of 120℃, and an argon atmosphere with an argon flow rate of 30sccm.

[0057] The thickness of the first layer is 25nm, the thickness of the second layer is 25nm, the thickness of the third layer is 25nm, the thickness of the fourth layer is 25nm, and the thickness of the fifth layer is 25nm.

[0058] The maximum light transmittance of Example 3 can reach 85%. The resistivity of Example 3 is 7.2 × 10⁻⁶. -4 Ωcm, carrier mobility 32.3cm 2 / VS, carrier concentration is 4.5×10 20 / cm 3 .

[0059] Comparative Example 1

[0060] A composite material for LED explosion-proof lights comprises: a first layer deposited on a substrate, the first layer being an AZO layer doped with Gd and Co; a second layer deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe; and a third layer deposited on the second layer, the third layer being an AZO layer doped with Gd and Fe. The remaining parameters, preparation process, and experimental methods are the same as in Example 1. It is understood that Comparative Example 1 has only three layers, and the target material composition and preparation method of these three layers are the same as in Example 1. The resistivity of Comparative Example 1 is 1.0 × 10⁻⁶. -3 Ωcm.

[0061] Comparative Example 2

[0062] A composite material for LED explosion-proof lights includes: a first layer deposited on a substrate, which is an AZO layer doped with Co and Fe; a second layer deposited on the first layer, which is also an AZO layer doped with Co and Fe; and a third layer deposited on the second layer, which is also an AZO layer doped with Co and Fe. The target materials for each layer are as follows: Co content 1 wt%, Fe content 1.3 wt%, Al content 1.5 wt%, and the balance ZnO. The specific deposition process for each layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10V, the sputtering power is 25W, the sputtering temperature is 100℃, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm. The thickness of each layer is 20 nm. It is understood that Comparative Example 2 has only three layers, and the target material composition and preparation method of these three layers are based on Comparative Example 2. The maximum transmittance of Comparative Example 2 is 78%. Since its transmittance is lower than the user's requirements, the electrical performance of Comparative Example 2 will not be tested.

[0063] Comparative Example 3

[0064] The target material for the first deposition layer is an AZO target doped with Gd and Co. In the AZO target doped with Gd and Co, the Gd content is 1.8 wt%, the Co content is 2 wt%, the Al content is 1.5 wt%, and the balance is ZnO.

[0065] The specific process for depositing the second layer is as follows: the deposition target is an AZO target doped with Ce and Fe, wherein the Ce content is 1.5wt%, the Fe content is 1.5wt%, the Al content is 2.5wt%, and the balance is ZnO.

[0066] The specific process for depositing the third layer is as follows: The deposition target is an AZO target doped with Gd and Fe, wherein the Gd content is 1.5 wt%, the Fe content is 1.5 wt%, the Al content is 1.5 wt%, and the balance is ZnO. The remaining parameters, preparation process, and experimental methods are all the same as in Example 1. It is understood that Comparative Example 3 has five layers; the preparation methods and target composition of the fourth and fifth layers are the same as in Example 1. Comparative Example 3 only describes parameters that differ from Example 1. The maximum transmittance of Comparative Example 3 is 75%. Since its transmittance is lower than the user's requirements, the electrical performance of Comparative Example 3 will not be tested further.

[0067] Comparative Example 4

[0068] The specific process for depositing the second layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 40V, the sputtering power is 100W, the sputtering temperature is 100℃, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm.

[0069] The specific process for depositing the third layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 50V, the sputtering power is 100W, the sputtering temperature is 100℃, the sputtering atmosphere is argon, and the argon flow rate is 30 sccm. The remaining parameters, preparation process, and experimental methods are all the same as in Example 1. It is understood that Comparative Example 4 has five layers; only the parameters different from those in Example 1 are described for Comparative Example 4. The sample in Comparative Example 4 had film fragmentation and could not be tested.

[0070] It should be understood that the specific embodiments described above are merely illustrative or explanatory of the principles of the invention and do not constitute a limitation thereof. Therefore, any modifications, equivalent substitutions, improvements, etc., made without departing from the spirit and scope of the invention should be included within the protection scope of the invention. Furthermore, the appended claims are intended to cover all variations and modifications falling within the scope and boundaries of the appended claims, or equivalent forms of such scope and boundaries.

Claims

1. A composite material for LED explosion-proof lights, comprising: The first layer deposited on the substrate is an AZO layer doped with Gd and Co; A second layer is deposited on the first layer, the second layer being an AZO layer doped with Ce and Fe; A third layer is deposited on the second layer, the third layer being an AZO layer doped with Gd and Fe; A fourth layer is deposited on the third layer, the fourth layer being an AZO layer doped with La and Ni; as well as A fifth layer, which is an AZO layer doped with La and Co, is deposited on the fourth layer. in, The target material for depositing the first layer is an AZO target doped with Gd and Co, wherein the Gd content is 0.8-1.2 wt%, the Co content is 1.0-1.6 wt%, the Al content is 1.5-2.5 wt%, and the balance is ZnO. The target material for depositing the second layer is an AZO target doped with Ce and Fe, wherein the Ce content is 0.5-0.8 wt%, the Fe content is 0.8-1.2 wt%, the Al content is 2.5-3.2 wt%, and the balance is ZnO. The target material for depositing the third layer is an AZO target doped with Gd and Fe, wherein the Gd content is 0.6-1.0 wt%, the Fe content is 0.5-0.9 wt%, the Al content is 1.5-2.5 wt%, and the balance is ZnO. The target material for depositing the fourth layer is an AZO target doped with La and Ni, wherein the La content is 0.3-0.6 wt%, the Ni content is 1.0-1.6 wt%, the Al content is 1.5-2.5 wt%, and the balance is ZnO. The target material for depositing the fifth layer is an AZO target doped with La and Co, wherein the La content is 0.3-0.6 wt%, the Co content is 0.9-1.3 wt%, the Al content is 2.5-3.2 wt%, and the balance is ZnO.

2. The composite material according to claim 1, wherein, The specific process for depositing the first layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150℃, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

3. The composite material according to claim 1, wherein, The specific process for depositing the second layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10-20V, the sputtering power is 40-50W, the sputtering temperature is 100-150℃, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

4. The composite material according to claim 1, wherein, The specific process for depositing the third layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150℃, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

5. The composite material according to claim 1, wherein, The specific process for depositing the fourth layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150℃, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

6. The composite material according to claim 1, wherein, The specific process for depositing the fifth layer is as follows: the magnetron sputtering power supply is an RF power supply, the sputtering voltage is 10-20V, the sputtering power is 25-40W, the sputtering temperature is 100-150℃, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

7. The composite material according to claim 1, wherein, The thickness of the first layer is 20-30nm, the thickness of the second layer is 20-30nm, the thickness of the third layer is 20-30nm, the thickness of the fourth layer is 20-30nm, and the thickness of the fifth layer is 20-30nm.

8. An LED explosion-proof light, wherein, The lampshade of the LED explosion-proof lamp uses the composite material described in any one of claims 1-7.

Images