Photodetector and electronic device

Abstract

A light detection device according to one embodiment of the present disclosure includes: a plurality of pixels provided to a semiconductor layer and including a first pixel having a photoelectric conversion element; and a separation portion disposed between a plurality of adjacent pixels in the semiconductor layer. The first pixel includes: a first transistor having a first gate electrode provided in the semiconductor layer to reach the photoelectric conversion portion, the first transistor being capable of transferring a charge photoelectrically converted by the photoelectric conversion portion; and a capacitor provided so as to be laminated on the photoelectric conversion part, the capacitor being capable of accumulating the charge photoelectrically converted by the photoelectric conversion part. The first gate electrode is provided in a region of the semiconductor layer separated from the separation portion.

Description

Technical Field

[0001] The present invention relates to a light detector and an electronic device. Background Art

[0002] An imaging device including a sensor pixel having a photodiode, a transfer transistor, and a charge retention unit has been proposed (Patent Document 1). The transfer transistor includes a vertical gate electrode. The charge retention unit retains charge transferred from the photodiode. List of citations Patent Literature

[0003] Patent Document 1: Japanese Unexamined Patent Application No. 2020-47616 Summary of the Invention

[0004] Devices that detect light need to suppress degradation of signal quality.

[0005] It is desirable to provide a photodetector configured to suppress degradation of signal quality.

[0006] According to an embodiment of the present disclosure, a photodetector includes a plurality of pixels and a separator. The plurality of pixels include a first pixel including a photoelectric conversion unit provided in a semiconductor layer. The separator is provided between adjacent pixels in the semiconductor layer. The first pixel includes a first transistor and a capacitor. The first transistor includes a first gate electrode and is configured to transmit charge photoelectrically converted by the photoelectric conversion unit. The first gate electrode is configured to reach the photoelectric conversion unit in the semiconductor layer. The capacitor is configured to be stacked on the photoelectric conversion unit and is configured to accumulate the charge photoelectrically converted by the photoelectric conversion unit. The first gate electrode is provided in a region of the semiconductor layer away from the separator. An electronic device according to an embodiment of the present disclosure includes an optical system and a photodetector. The photodetector receives light transmitted through the optical system. The photodetector includes a plurality of pixels and a separator. The plurality of pixels include a first pixel, the first pixel including a photoelectric conversion unit provided in a semiconductor layer. The separator is provided between adjacent pixels in the semiconductor layer. The first pixel includes a first transistor and a capacitor. The first transistor includes a first gate electrode and is configured to transmit charge photoelectrically converted by the photoelectric conversion unit. The first gate electrode is configured to reach the photoelectric conversion unit in the semiconductor layer. The capacitor is configured to be stacked on the photoelectric conversion unit and is configured to accumulate charge photoelectrically converted by the photoelectric conversion unit. The first gate electrode is provided in a region of the semiconductor layer away from the separator. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] [Figure 1 ] Figure 1 : is a block diagram illustrating an example of a schematic configuration of an image pickup device as an example of a photodetector according to an embodiment of the present disclosure. [ Figure 2 ] Figure 2 is a diagram illustrating an example of a pixel arrangement of an image pickup device according to an embodiment of the present disclosure. [ Figure 3 ] Figure 3 is a diagram illustrating a circuit configuration example of a pixel of an image pickup device according to an embodiment of the present disclosure. [ Figure 4 ] Figure 4 is a diagram illustrating an example of a cross-sectional configuration of an image pickup device according to an embodiment of the present disclosure. [ Figure 5 ] Figure 5 is a diagram illustrating an example of a planar configuration of pixels of an image pickup device according to an embodiment of the present disclosure. [ Figure 6 ] Figure 6 is a diagram illustrating a configuration example of a pixel of an image pickup device according to an embodiment of the present disclosure. [ Figure 7 ] Figure 7 is a diagram illustrating a configuration example of a pixel of an image pickup device according to an embodiment of the present disclosure. [ Figure 8 ] Figure 8 is a diagram illustrating a configuration example of a pixel of an image pickup device according to an embodiment of the present disclosure. [ Figure 9 ] Figure 9 is a diagram illustrating a configuration example of a pixel of an image pickup device according to an embodiment of the present disclosure. [ Figure 10 ] Figure 10 is a diagram illustrating another example of the configuration of a pixel of the image pickup device according to an embodiment of the present disclosure. [ Figure 11 ] Figure 11 is a diagram illustrating another example of the configuration of a pixel of the image pickup device according to an embodiment of the present disclosure. [ Figure 12 ] Figure 12 is a diagram illustrating another example of the configuration of a pixel of the image pickup device according to an embodiment of the present disclosure. [ Figure 13A ] Figure 13A is a diagram illustrating another example of the configuration of a pixel of the image pickup device according to an embodiment of the present disclosure. [ Figure 13B ] Figure 13B is a diagram illustrating another example of the configuration of a pixel of the image pickup device according to an embodiment of the present disclosure. [ Figure 14 ] Figure 14 A diagram illustrating a configuration example of pixels of an image pickup device according to Modification 1 of the present disclosure. [ Figure 15 ] Figure 15 A diagram illustrating a configuration example of pixels of an image pickup device according to Modification 1 of the present disclosure. [ Figure 16A ] Figure 16A 1 is a diagram illustrating an example of a circuit configuration of a pixel of an image pickup device according to Modification 1. FIG. [ Figure 16B ] Figure 16B This is a diagram illustrating another example of the circuit configuration of a pixel of the image pickup device according to Modification 1. [ Figure 16C ] Figure 16C This is a diagram illustrating another example of the circuit configuration of a pixel of the image pickup device according to Modification 1. [ Figure 16D ] Figure 16D This is a diagram illustrating another example of the circuit configuration of a pixel of the image pickup device according to Modification 1. [ Figure 17 ] Figure 17 A diagram illustrating a configuration example of pixels of an image pickup device according to Modification 2 of the present disclosure. [ Figure 18 ] Figure 18 A diagram illustrating a configuration example of pixels of an image pickup device according to Modification 2 of the present disclosure. [ Figure 19 ] Figure 19 A diagram illustrating a configuration example of pixels of an image pickup device according to Modification 2 of the present disclosure. [ Figure 20 ] Figure 20 A diagram illustrating a configuration example of pixels of an image pickup device according to Modification 2 of the present disclosure. [ Figure 21 ] Figure 21 A diagram illustrating a configuration example of pixels of an image pickup device according to Modification 3 of the present disclosure. [ Figure 22 ] Figure 22 A diagram illustrating a configuration example of pixels of an image pickup device according to Modification 3 of the present disclosure. [ Figure 23 ] Figure 23 : is a diagram showing an example of a circuit configuration of a pixel of an image pickup device according to Modification 4. [ Figure 24 ] Figure 24 is a block diagram showing a configuration example of an electronic device including an imaging device. [ Figure 25] Figure 25 is a block diagram showing an example of a schematic configuration of a vehicle control system. [ Figure 26 ] Figure 26 It is a diagram for assisting in explaining an example of the installation positions of the vehicle exterior information detection unit and the imaging unit. [ Figure 27 ] Figure 27 is a diagram showing an example of a schematic configuration of an endoscopic surgery system. [ Figure 28 ] Figure 28 : is a block diagram showing an example of the functional configuration of a camera head and a camera control unit (CCU). DETAILED DESCRIPTION

[0008] Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. It should be noted that the description will be given in the following order: 1. Implementation Plan 2. Modification 3. Application Examples 4. Application Examples <1. Implementation Plan>

[0009] Figure 1 1 is a block diagram showing an example of a schematic configuration of an imaging device as an example of a photodetector according to an embodiment of the present disclosure. A photodetector is a device configured to detect incident light. An imaging device 1 serving as a photodetector includes a plurality of pixels P, each pixel P including a photoelectric conversion unit (photoelectric converter), and configured to generate a signal by photoelectric conversion of incident light. The imaging device 1 (photodetector) is configured to generate a signal by receiving light transmitted through an optical system (not shown) including an optical lens.

[0010] The imaging device 1 is constructed, for example, using a semiconductor substrate (e.g., a silicon substrate) provided with a plurality of pixels P. The photoelectric conversion portion of each pixel P of the imaging device 1 is, for example, a photodiode (PD), and is configured to perform photoelectric conversion on light. The imaging device 1 includes a region (pixel unit 100) in which a plurality of pixels P are arranged two-dimensionally to form a matrix as an imaging region. The pixel unit 100 is a pixel array in which a plurality of pixels P are arranged, and can also be referred to as a light receiving region.

[0011] The imaging device 1 captures incident light (image light) from a subject via an optical system including an optical lens. The imaging device 1 captures an image of the subject formed by the optical lens. The imaging device 1 is configured to generate pixel signals through photoelectric conversion of received light. The imaging device 1 is, for example, a CMOS (Complementary Metal Oxide Semiconductor) image sensor. The imaging device 1 can be used in electronic devices including, for example, digital cameras, video cameras, and mobile phones.

[0012] like Figure 1 As shown in the example of FIG, the imaging device 1 includes, for example, a pixel driving unit 111, a signal processing unit 112, a control unit 113, and a processing unit 114 in the peripheral area of ​​the pixel unit 100 (pixel array). In addition, the imaging device 1 is provided with a plurality of control lines L1 and a plurality of signal lines L2.

[0013] The control line L1 is a signal line configured to transmit a signal for controlling the pixel P, and is connected to the pixel driving unit 111 and the pixel P of the pixel unit 100. Figure 1 In the example of FIG. 1 , each of the plurality of control lines L1 is wired for a corresponding pixel row consisting of a plurality of pixels P arranged in a horizontal direction (row direction) for the pixel unit 100. The control line L1 is configured to transmit a control signal for reading a signal from the pixel P.

[0014] As an example, each of the plurality of control lines L1 for a corresponding pixel row of the imaging device 1 includes a wiring for transmitting a signal for controlling a transfer transistor, a wiring for transmitting a signal for controlling a select transistor, a wiring for transmitting a signal for controlling a reset transistor, etc. The control line L1 may also be referred to as a drive line (pixel drive line), which transmits a signal for driving the pixel P.

[0015] The signal line L2 is a signal line configured to transmit a signal from the pixel P, and is connected to the pixel P of the pixel unit 100 and the signal processing unit 112. For example, one or more signal lines L2 are connected to each of a pixel column composed of a plurality of pixels P arranged in a vertical direction (column direction).

[0016] The signal line L2 is a vertical signal line and is configured to transmit a signal output from the pixel P. For the image pickup device 1 , a plurality of signal lines L2 may be provided for one pixel column. The image pickup device 1 may have a plurality of signal lines L2 for each pixel column.

[0017] The pixel driving unit 111 is configured to drive each pixel P of the pixel unit 100. The pixel driving unit 111 is a driving circuit and is composed of multiple circuits including, for example, a buffer, a shift register, and an address decoder. The pixel driving unit 111 generates a signal for driving the pixel P and outputs the signal to each pixel P of the pixel unit 100 via the control line L1. The pixel driving unit 111 is controlled by the control unit 113 and controls the pixels P of the pixel unit 100.

[0018] The pixel driving unit 111 generates signals for controlling the pixels P, such as signals for controlling the transfer transistors of the pixels P, signals for controlling the selection transistors, or signals for controlling the reset transistors, and supplies these signals to the respective pixels P via the control lines L1. The pixel driving unit 111 is configured to control the reading of pixel signals from the respective pixels P. The pixel driving unit 111 may be referred to as a pixel control unit, which is configured to control the respective pixels P. Note that the pixel driving unit 111 and the control unit 113 may also be collectively referred to as a pixel control unit.

[0019] The signal processing unit 112 is configured to perform signal processing on the input pixel signal. The signal processing unit 112 is a signal processing circuit and includes, for example, a load circuit unit, an AD (analog-to-digital) converter, and a horizontal selection switch. Note that the signal processing unit 112 may include an amplifier circuit unit configured to amplify the signal read from the pixel P via the signal line L2.

[0020] The signals output from the respective pixels P selectively scanned by the pixel driving unit 111 are input to the signal processing unit 112 via the signal line L2. The signal processing unit 112 is configured to perform signal processing, such as AD conversion or CDS (Correlated Double Sampling), on the pixels P. The signals of the respective pixels P transmitted via the corresponding signal lines L2 are processed by the signal processing unit 112 and output to the processing unit 114.

[0021] The processing unit 114 is configured to perform signal processing on the input signal. The processing unit 114 is a signal processing circuit and is composed of, for example, circuits that perform various types of signal processing on the pixel signal. The processing unit 114 may include a processor and a memory. The processing unit 114 performs signal processing on the pixel signal input from the signal processing unit 112 and outputs the processed pixel signal. The processing unit 114 is configured to perform various types of signal processing, such as noise reduction processing or tone compensation processing.

[0022] The control unit 113 is configured to control each part of the imaging device 1. The control unit 113 receives a clock supplied from the outside, data indicating an operation mode, and the like, and is configured to output data such as internal information of the imaging device 1. The control unit 113 is a control circuit and includes, for example, a timing generator configured to generate various timing signals.

[0023] The control unit 113 performs drive control of the pixel driving unit 111, the signal processing unit 112, etc. based on various timing signals (pulse signal, clock signal, etc.) generated by the timing generator. Note that the control unit 113 and the processing unit 114 may be integrally configured.

[0024] The pixel driving unit 111, signal processing unit 112, control unit 113, and processing unit 114 may be provided on a single semiconductor substrate or may be provided on a plurality of semiconductor substrates. The imaging device 1 may have a structure (stacked structure) constituted by stacking a plurality of substrates.

[0025] Figure 2 1 is a diagram showing an example of a pixel arrangement of an image pickup device according to an embodiment. A pixel P of the image pickup device 1 includes a photoelectric conversion unit 12 and a lens 81. Note that, as Figure 2 As shown, the direction of light incident from the subject is called the Z-axis direction, the left-right direction on the drawing perpendicular to the Z-axis direction is called the X-axis direction, and the up-down direction on the drawing perpendicular to the Z-axis direction and perpendicular to the X-axis direction is called the Y-axis direction. Figure 2 The direction of the arrow is used as a reference to indicate the direction.

[0026] The lens 81 is an optical component also called an on-chip lens. The lens 81 is provided above the photoelectric converter 12, for example, for each pixel P or for each plurality of pixels P. Light from a subject enters the lens 81 via an optical system such as an imaging lens. The photoelectric converter 12 performs photoelectric conversion on the light incident via the lens 81.

[0027] Furthermore, the pixel P may include a filter 82 (see also the filter 82 described below). Figure 4 ). The filter 82 is configured to selectively transmit light having a specific wavelength range in the incident light. The filter 82 is, for example, an RGB color filter, an infrared light transmission filter, or the like.

[0028] The plurality of pixels P provided in the pixel unit 100 of the imaging device 1 include a plurality of pixels (R pixels) provided with filters 82 that transmit red (R) light, a plurality of pixels (G pixels) provided with filters 82 that transmit green (G) light, and a plurality of pixels (B pixels) provided with filters 82 that transmit blue (B) light. The plurality of R pixels, the plurality of G pixels, and the plurality of B pixels are repeatedly arranged in the pixel unit 100. The R pixels, the G pixels, and the B pixels are arranged, for example, according to a Bayer arrangement.

[0029] As an example, R pixels, G pixels, and B pixels may each be arranged in units of 2 pixels by 2 pixels. For example, four adjacent R pixels, four adjacent G pixels, and four adjacent B pixels are repeatedly arranged in the pixel unit 100. Therefore, it can also be understood that the R pixels, G pixels, and B pixels are each cyclically arranged in units of 2 rows by 2 columns.

[0030] The R pixel, the G pixel, and the B pixel generate an R component pixel signal, a G component pixel signal, and a B component pixel signal, respectively. The image pickup device 1 can acquire RGB pixel signals. Note that the arrangement of pixels is not limited to the above example and can be set as needed.

[0031] The filter 82 provided in the pixel P in the pixel unit 100 is not limited to the color filter according to the primary color system (RGB), and a color filter according to a complementary color system such as Cy (cyan), Mg (magenta), or Ye (yellow) can also be used. In addition, a filter corresponding to W (white) that is a filter that transmits the entire wavelength range of incident light can also be arranged.

[0032] Furthermore, the image pickup device 1 may omit the filter 82 as needed. For example, for pixels P that receive white (W) light and perform photoelectric conversion, the filter 82 need not be provided. Furthermore, the filter 82 may not be provided for some of all pixels P in the image pickup device 1.

[0033] Figure 3 1 is a diagram illustrating an example of a circuit configuration of a pixel of an image pickup device according to an embodiment. A pixel P of the image pickup device 1 includes a photoelectric conversion unit 12 (photoelectric converter), a transistor TRZ, a transistor TRX, a transistor TRG, a transistor OFG, and a reading circuit 20. The photoelectric conversion unit 12 is configured to receive light and generate a signal.

[0034] The photoelectric conversion section 12 is a light receiving section (light receiving element) configured to generate electric charges by photoelectric conversion. Figure 3 In the example of FIG, the photoelectric conversion section 12 is a photodiode (PD) and converts incident light into electric charge. The photoelectric conversion section 12 performs photoelectric conversion and generates electric charge corresponding to the amount of received light.

[0035] The transistor TRZ is configured to transfer the charge that has been photoelectrically converted by the photoelectric conversion unit 12 to the transistor TRX and the capacitor MEM. The transistor TRZ is controlled by the signal STRZ and electrically connects or disconnects the photoelectric conversion unit 12 and the transistor TRX from each other. The transistor TRZ is a transfer transistor and is configured to transfer the charge that has been photoelectrically converted and accumulated by the photoelectric conversion unit 12 to the transistor TRX and the capacitor MEM.

[0036] The transistor TRX is configured to control the potential of the capacitor MEM. The transistor TRX is controlled by the signal STRX and is configured to control (adjust) the potential of the capacitor MEM. The transistor TRX is configured to adjust (change) the height of the potential barrier formed between the transistor TRZ and the capacitor MEM, for example.

[0037] For example, when the transistor TRX is on, the potential of the capacitor MEM becomes deeper, and when the transistor TRZ is off, the potential of the capacitor MEM becomes shallower. The transistor TRZ transfers the charge photoelectrically converted by the photoelectric conversion unit 12 to the capacitor MEM via the transistor TRX.

[0038] Capacitor MEM is an accumulation unit (or storage unit) configured to accumulate transferred charge. Capacitor MEM is configured, for example, by a MOS capacitor, a MIM (metal-insulator-metal) capacitor, or the like. Capacitor MEM is configured to accumulate charge photoelectrically converted by photoelectric conversion unit 12. Capacitor MEM can also be referred to as a holding unit configured to hold the transferred charge.

[0039] The transistor TRG is configured to transfer the charge accumulated in the capacitor MEM to the floating diffusion FD of the read circuit 20. The transistor TRG is controlled by a signal STRG, and electrically connects or disconnects the transistor TRX and the floating diffusion FD to each other.

[0040] The transistor TRG is a transfer transistor and is configured to transfer the charge accumulated in the capacitor MEM to the floating diffusion FD. For example, the charge accumulated in the capacitor MEM is transferred to the floating diffusion FD via the transistor TRX and the transistor TRG.

[0041] The transistor OFG is configured to reset the charge of the photoelectric conversion portion 12. Figure 3 In the illustrated example, the transistor OFG is electrically connected to a power supply line (power voltage VDD is supplied via the power supply line) and is configured to reset the photoelectric converter 12. The transistor OFG is configured to release the charge accumulated in the photoelectric converter 12 via the transistor TRZ and reset the voltage of the photoelectric converter 12. The transistor OFG is a reset transistor.

[0042] The readout circuit 20 is configured to output a signal based on the photoelectrically converted charge. As an example, the readout circuit 20 includes a floating diffusion FD, a transistor AMP, a transistor SEL, and a transistor RST. Note that the readout circuit 30 may also include the aforementioned transistors TRZ, TRX, TRG, and OFG.

[0043] Regarding the imaging device 1, for example, the reading circuit 20 may be provided for each pixel P or for each of the plurality of pixels P. The imaging device 1 may also have a configuration in which, for example, a plurality of pixels P share a single reading circuit 20. The imaging device 1 may also have a configuration in which, for example, a plurality of adjacent pixels P share a transistor AMP, a transistor RST, and the like of the reading circuit 20.

[0044] The floating diffusion FD is an accumulation unit configured to accumulate transferred charge. The floating diffusion FD is configured to accumulate charge that has been photoelectrically converted by the photoelectric conversion unit 12. The floating diffusion FD can also be referred to as a holding unit configured to hold the transferred charge. The floating diffusion FD accumulates the transferred charge and converts it into a voltage corresponding to the capacitance of the floating diffusion FD.

[0045] The transistor AMP is configured to generate and output a signal based on the charge accumulated in the floating diffusion FD. Figure 3 As shown, the gate of the transistor AMP is electrically connected to the floating diffusion FD, and receives the voltage converted by the floating diffusion FD.

[0046] The drain of the transistor AMP is connected to a power supply line (through which the power voltage VDD is supplied), and the source of the transistor AMP is connected to the signal line L2 via the transistor SEL. The transistor AMP is an amplifying transistor and is configured to generate a signal based on the charge accumulated in the floating diffusion FD (i.e., a signal based on the voltage of the floating diffusion FD) and output the signal to the signal line L2.

[0047] Transistor SEL is configured to control pixel signal output. Transistor SEL is controlled by signal SSEL and is configured to output a signal from transistor AMP to signal line L2. Transistor SEL is a selection transistor and is configured to control the output timing of the pixel signal. Note that transistor SEL can be provided between a power line (through which power voltage VDD is supplied) and transistor AMP. Furthermore, transistor SEL can be omitted as desired.

[0048] The transistor RST is configured to reset the voltage of the floating diffusion FD. Figure 3 In the illustrated example, the transistor RST is electrically connected to a power supply line through which a power voltage VDD is supplied, and is configured to reset the charge of the pixel P.

[0049] The transistor RST is controlled by a signal SRST and is configured to reset the charge accumulated in the floating diffusion FD and reset the voltage of the floating diffusion FD. The transistor RST is a reset transistor.

[0050] The above-mentioned transistor TRZ, transistor TRX, transistor TRG, transistor OFG, transistor AMP, transistor SEL, and transistor RST are all MOS transistors (MOSFETs) each having a gate, a source, and a drain terminal.

[0051] exist Figure 3In the example shown, transistors TRZ, TRX, TRG, OFG, AMP, SEL, and RST are all NMOS transistors. Note that the transistors of the pixel P may be PMOS transistors.

[0052] Note that the configuration of the read circuit 20 can be modified as appropriate and is not limited to the above example. For example, the read circuit 20 can be configured to change the conversion efficiency (gain) when converting charge to voltage. For example, the read circuit 20 can include a switching transistor for setting the conversion efficiency. As an example, the switching transistor is provided between the floating diffusion FD and the transistor RST.

[0053] The switching transistor may be connected in parallel to the transistor RST. For example, the switching transistor may be configured to electrically connect the floating diffusion FD and the capacitance for switching the gain to each other.

[0054] Regarding the reading circuit 20, when the switching transistor is turned on, the capacitance added to the floating diffusion FD of the pixel P becomes larger and the conversion efficiency is switched. The switching transistor is configured to switch the capacitance connected to the gate of the transistor AMP and change the conversion efficiency.

[0055] Pixel driving unit 111 (see Figure 1 ) supplies control signals to the gates of the transistors TRZ, TRX, TRG, OFG, AMP, SEL, and RST of each pixel P via the above-mentioned control line L1, and turns on (conductive state) or off (non-conductive state) the transistors.

[0056] The multiple control lines L1 of the imaging device 1 include wiring for transmitting a signal STRZ for controlling the transistor TRZ, wiring for transmitting a signal STRX for controlling the transistor TRX, wiring for transmitting a signal STRG for controlling the transistor TRG, and wiring for transmitting a signal SOFG for controlling the transistor OFG. Furthermore, the multiple control lines L1 of the imaging device 1 include wiring for transmitting a signal SSEL for controlling the transistor SEL, wiring for transmitting a signal SRST for controlling the transistor RST, and the like.

[0057] The pixel driving unit 111 controls the on / off states of transistors TRZ, TRX, TRG, OFG, SEL, and RST. The pixel driving unit 111 controls each pixel P so that each pixel P outputs a pixel signal to the signal line L2. The pixel driving unit 111 is configured to control the reading of the pixel signal of each pixel P onto the signal line L2.

[0058] Each pixel P of the imaging device 1 can temporarily accumulate charge photoelectrically converted by the photoelectric conversion unit 12 in its capacitor MEM. Thus, the imaging device 1 can implement a global shutter. The pixels P are configured to operate in a global shutter mode and can be referred to as global shutter pixels. In the case of a global shutter, the pixel drive unit 111 can collectively reset the charge in the photoelectric conversion unit 12 of each pixel P, for example, by controlling the transistors OFG of each pixel P.

[0059] Figure 4 : is a diagram showing an example of a cross-sectional configuration of an image pickup device according to an embodiment. Figure 5 : is a diagram showing an example of a planar configuration of a pixel of an image pickup device according to an embodiment. Figure 4 As shown, the image pickup device 1 is composed of a light guide unit 80 , an insulating layer 70 , a semiconductor layer 10 , and a multilayer wiring layer 90 stacked in the Z-axis direction.

[0060] like Figure 4 As shown, semiconductor layer 10 includes a first surface 11S1 and a second surface 11S2 that are opposite to each other. Second surface 11S2 is a surface opposite first surface 11S1. Semiconductor layer 10 is formed from a semiconductor substrate, such as a Si (silicon) substrate. First surface 11S1 of semiconductor layer 10 is a light-receiving surface (light-incident surface). Second surface 11S2 of semiconductor layer 10 is a component-forming surface, on which components such as transistors are formed.

[0061] Second surface 11S2 of semiconductor layer 10 is provided with a gate electrode, a gate oxide film (not shown), and the like. Figure 4 The transistor TRZ, the transistor TRX, and the capacitor MEM are shown. The gate electrode 30 of the transistor TRZ is formed on the second face 11S2 side of the semiconductor layer 10 via a gate oxide film (not shown).

[0062] The gate electrode 30 may include, for example, polysilicon (Poly-Si), a metal material, a metal compound, etc. The gate electrode 30 may include, for example, titanium nitride (TiN), tantalum nitride (TaN), etc.

[0063] also, Figure 4 and Figure 5 The gate electrodes 31 of the transistor TRX, 32 of the transistor TRG, and 33 of the transistor OFG shown may also include polysilicon, a metal material, a metal compound, etc. In addition, the gate electrodes 30 to 33 may also include a material including at least any one of titanium, nickel, zirconium, tantalum, tungsten, aluminum, hafnium, etc.

[0064] exist Figure 4In the illustrated example, the insulating layer 70 and the light guide 80 are provided on the first surface 11S1 side of the semiconductor layer 10. The multilayer wiring layer 90 is provided on the second surface 11S2 side of the semiconductor layer 10. The light guide 80 and the like are provided on the side where light enters from the optical system, and the multilayer wiring layer 90 is provided on the side opposite to the light entrance side. The imaging device 1 is a so-called back-illuminated imaging device.

[0065] In the semiconductor layer 1, a plurality of photoelectric conversion units 12 (photoelectric converters) are provided along the first surface 11S1 and the second surface 11S2 of the semiconductor layer 10. For example, the plurality of photoelectric conversion units 12 are formed by embedding. Figure 4 As schematically shown, the photoelectric conversion unit 12 is configured by including an N-type semiconductor region 13 a and a P-type semiconductor region 13 b .

[0066] Furthermore, the semiconductor layer 10 is provided with a plurality of capacitors MEM. The capacitors MEM are provided to be stacked with the photoelectric conversion unit 12. The capacitors MEM may be arranged to be buried in the semiconductor layer 10, for example. Figure 4 In the example shown, the capacitor MEM is formed in the semiconductor layer 10 above the photoelectric conversion portion 12 .

[0067] The imaging device 1 has a structure in which the photoelectric conversion unit 12 and the capacitor MEM are stacked one on top of the other. It is understood that the photoelectric conversion unit 12 and the capacitor MEM are stacked vertically. Note that the semiconductor layer 10 may be an SOI (silicon on insulator) substrate, a SiGe (silicon germanium) substrate, a SiC (silicon carbide) substrate, or the like, and may include a III-V compound semiconductor material or the like.

[0068] The multilayer wiring layer 90 includes, for example, a conductive film and an insulating film, and includes a plurality of wirings, through-holes (VIAs), and the like. The multilayer wiring layer 90 includes, for example, two or more layers of wirings. The multilayer wiring layer 90 has a structure in which a plurality of wirings are stacked one on top of the other with an insulating film interposed therebetween. The insulating film of the multilayer wiring layer 90 may also be referred to as an interlayer insulating film (interlayer insulating layer).

[0069] The wiring of the multilayer wiring layer 90 is formed, for example, using a metal material such as aluminum (Al), copper (Cu), or tungsten (W). The wiring of the multilayer wiring layer 90 may include polysilicon (Poly-Si) or other conductive materials. The interlayer insulating film is formed using, for example, silicon oxide (SiO), silicon nitride (NiO), silicon oxynitride (SiON), etc.

[0070] The semiconductor layer 10 and the multilayer wiring layer 90 are provided with, for example, the transistors (transistor TRZ, transistor TRX, transistor TRG, transistor OFG, etc.) of the above-mentioned pixel P. Note that the above-mentioned reading circuit 20, pixel driving unit 111, signal processing unit 112, control unit 113, processing unit 114, etc. may be provided on a substrate (semiconductor substrate) other than the semiconductor layer 10, or may be provided on the semiconductor layer 10 and the multilayer wiring layer 90.

[0071] The light guide unit 80 is stacked on the semiconductor layer 10 and the insulating layer 70 in a thickness direction perpendicular to the first surface 11S1 of the semiconductor layer 10. The light guide unit 80 includes a lens 81 and a filter 82, and guides incident light to the semiconductor layer 10 side. The photoelectric conversion unit 12 performs photoelectric conversion on the light incident via the lens 81 and the filter 82.

[0072] The insulating layer 70 is provided between the light guide unit 80 and the semiconductor layer 10. For example, the insulating layer is formed by using an insulating film such as an oxide film, a nitride film, or an oxynitride film. The insulating layer 70 may include silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or other insulating materials. The insulating layer 70 may also be referred to as a planarization layer (planarization film).

[0073] In addition, if Figure 4 and Figure 5 As shown in the example of FIG, the imaging device 1 is provided with a separator 60. The separator 60 is formed between a plurality of adjacent photoelectric conversion units 12 in the semiconductor layer 10 and separates the photoelectric conversion units 12. The separator 60 is configured by using a trench (groove) provided at the boundary between adjacent pixels P. The separator 60 has, for example, a DTI (deep trench isolation) structure.

[0074] exist Figure 4 In the example shown, the separation portion 60 is provided to penetrate the semiconductor layer 10. For example, the separation portion 60 is provided to surround each photoelectric conversion portion 12 in the semiconductor layer 10. Figure 5 As shown, in a plan view, the separation portion 60 is provided to surround a plurality of elements of the pixel P (transistor TRZ, transistor TRX, transistor TRG, transistor OFG, etc.).

[0075] As an example, an insulating film such as an oxide film (eg, silicon oxide film) or a nitride film (eg, silicon nitride film) is provided in the trench of the separation portion 60. Note that the trench of the separation portion 60 may be filled with polysilicon, a metal material, or the like.

[0076] Since the separator 60 is provided, the charge photoelectrically converted by the photoelectric converter 12 of the pixel P is prevented from leaking to the surrounding pixels P. In addition, light can be prevented from leaking to the surrounding pixels P. Note that as the separator 60, a separator that forms a potential barrier may be provided between adjacent photoelectric converters 12 to electrically separate the adjacent photoelectric converters 12.

[0077] like Figure 4 As shown, the semiconductor region 65 is provided on the side wall of the separation portion 60. The semiconductor region 65 is a semiconductor region of a predetermined conductivity type and is a semiconductor layer formed by using impurities. The semiconductor region 65 is, for example, a p-type semiconductor region and is a doped layer doped with p-type impurities.

[0078] The semiconductor region 65 is provided on the side surface (side portion) of the separation portion 60 by, for example, ion implantation or solid phase diffusion. The semiconductor region 65 is a pinning film (pinning layer) and can be formed to cover the side wall of the separation portion 60. Since the semiconductor region 65 is provided, the generation of dark current is suppressed.

[0079] In addition, if Figure 4 As shown, the camera device 1 includes a light shielding portion 40. The light shielding portion ( Figure 4 , the light shielding portion 40a and the light shielding portion 40b) are light shielding members including a member for shielding light, and are provided in the semiconductor layer 10. The light shielding portion 40a and the light shielding portion 40b are both provided in the region where the photoelectric conversion portion 12 is located, and can be understood as being arranged by replacing a portion in the photoelectric conversion portion 12. Note that in Figure 4 In the illustrated example, the light shielding portion 40 is not provided between the photoelectric conversion portion 12 and the capacitor MEM.

[0080] The light shielding portion 40a and the light shielding portion 40b both extend in a direction perpendicular to the thickness direction of the semiconductor layer 10 (i.e., in the X-axis direction (and in the Y-axis direction)). The light shielding portion 40a and the light shielding portion 40b may be arranged so that a portion of the photoelectric conversion portion 12 is interposed therebetween. Figure 4 In the illustrated example, the light shielding portion 40 a and the light shielding portion 40 b are arranged so as to overlap with each other.

[0081] The light shielding portion 40a and the light shielding portion 40b both include a light shielding metal material (aluminum (Al), tungsten (W), copper (Cu), etc.) The light shielding portion 40a and the light shielding portion 40b may include a light absorbing material.

[0082] The light shielding portions 40a and 40b can be formed, for example, by wet etching the groove of the separation portion 60 using plane orientation dependency. The light shielding portions 40a and 40b can be provided so as to be buried in the groove of the separation portion 60 in the lateral direction (X-axis direction and Y-axis direction).

[0083] Since the light shielding portions 40a and 40b are provided, the image pickup device 1 can suppress unnecessary light from entering the capacitor MEM and can also suppress noise from being mixed into the pixel signal, thereby improving the PLS (parasitic light sensitivity) characteristic.

[0084] In the imaging device 1, the gate electrode 30 of the transistor TRZ is provided so as to reach the photoelectric conversion unit 12 in the semiconductor layer 10. At least a portion of the gate electrode 30 may be provided so as to be buried in the semiconductor layer 10. The gate electrode 30 includes a first portion VG provided so as to reach the photoelectric conversion unit 12 in the semiconductor layer 10 and a second portion SG provided on the second surface 11S2 side of the semiconductor layer 10.

[0085] like Figure 4 As shown in the example of FIG. 4 , the first portion VG serving as a portion of the gate electrode 30 of the transistor TRZ is formed in the semiconductor layer 10 so as to be located, for example, inside the semiconductor layer 10. The transistor TRZ has a vertical gate structure.

[0086] like Figure 4 As shown in the example of FIG, the first portion VG of the gate electrode 30 of the transistor TRZ is provided, for example, from the second surface 11S2 side of the semiconductor layer 10 to the photoelectric conversion unit 12. Note that the gate insulating film of the transistor TRZ is formed along the first portion VG of the gate electrode 30 inside the semiconductor layer 10.

[0087] When the transistor TRZ is turned on, the charge photoelectrically converted by the photoelectric converter 12 is transferred to the capacitor MEM via the side surface (side portion) of the gate insulating film of the first portion VG. Therefore, the transistor TRZ is configured to transfer the charge photoelectrically converted by the photoelectric converter 12 to the capacitor MEM provided for the photoelectric converter 12.

[0088] Regarding the camera device 1, Figure 4 and Figure 5 As shown in the example of , the gate electrode 30 of the transistor TRZ is provided in a region away from the separation portion 60. The gate electrode 30 of the transistor TRZ is provided at a position away from the separation portion 60 provided in all directions, for example, in the central portion of the pixel P. With respect to the pixel P, the transistor TRZ is provided adjacent to the transistor TRG, for example.

[0089] exist Figure 5 In the example shown, the gate electrode 30 of the transistor TRZ is arranged adjacent to the gate electrode 32 of the transistor TRG in a plan view. The distance between the gate electrode 30 and the separation portion 60 is greater than the distance between the gate electrode 32 and the separation portion 60. Figure 5 In the example shown, the transistor TRG and the transistor OFG are arranged so that the transistor TRZ is interposed therebetween.

[0090] In a plan view, at least a portion of the transistor TRZ may be disposed at the center of the pixel P. At least a portion of the gate electrode 30 of the transistor TRZ may be disposed at the center of the pixel P. Furthermore, at least a portion of the first portion VG of the gate electrode 30 may be arranged at the center of the pixel P.

[0091] When transistor TRZ is close to separator 60 and semiconductor region 65, a strong electric field is likely to be generated between transistor TRZ and semiconductor region 65. When transistor TRZ is turned on, a strong electric field is generated between the first portion VG of gate electrode 30 of transistor TRZ and semiconductor region 65 (e.g., p-type semiconductor region), and the pixel signal is mixed with noise. In particular, when a high-concentration p-type semiconductor region 65 is present on the sidewall of separator 60, a strong electric field is likely to be generated, and, for example, white spots (white scratches) may appear in the image. In addition, in the case of fine pixels, when a strong electric field is generated, the pixel signal quality and image quality tend to deteriorate.

[0092] Therefore, according to this embodiment, as described above, the gate electrode 30 of the transistor TRZ is provided in a region away from the separating portion 60. Compared to a case where the transistor TRZ and the separating portion 60 are provided close to each other, the electric field generated between the gate electrode 30 of the transistor TRZ and the separating portion 60 can be weakened, and the mixing of noise into the pixel signal can also be suppressed. The appearance of white spots and the like in the image can be suppressed.

[0093] Furthermore, in the case of fine pixels, by Figure 5 By arranging the transistor TRZ as shown in the example of FIG, it is also possible to weaken the electric field between the gate electrode 30 of the transistor TRZ and the semiconductor region 65. Therefore, it is possible to suppress degradation of pixel signal quality and also suppress degradation of image quality.

[0094] Figures 6 to 9 1 and 2 are diagrams illustrating a configuration example of a pixel of an image pickup device according to an embodiment of the present invention. For example, the transistor TRZ is provided adjacent to the side (surface) of the transistor TRG. Figure 6 As shown by the arrow in , the gate electrode 30 may be provided adjacent to the side 22 farthest from the separating portion 60 among the sides of the gate electrode 32 of the transistor TRG.

[0095] exist Figure 7 In FIG, the dotted line A represents the diagonal line of the pixel P. At least a portion of the transistor TRZ may be disposed at a position on the diagonal line of the pixel P. At least a portion of the gate electrode 30 of the transistor TRZ may be disposed on the diagonal line of the pixel P. Figure 7 As shown in the example of , the transistor TRZ may be arranged such that the first portion VG of the gate electrode 30 overlaps with the diagonal line indicated by the dotted line A.

[0096] like Figure 8 As shown, when the width of the pixel P is defined as "a", the distance between the center of the first portion VG of the gate electrode 30 and the separation portion 60 may be greater than or equal to one third (= a / 3) of the width a of the pixel P. Figure 8 In the example shown, the distance between the center of the first portion VG and the edge of the separation portion 60 is greater than or equal to a / 3. Note that the position of the first portion VG of the gate electrode 30 is not limited to Figure 8 The example shown, and as in Figure 9 The examples shown schematically can be modified as appropriate.

[0097] Figures 10 to 13A and Figure 13B Each is a diagram illustrating another configuration example of a pixel of the image pickup device according to the embodiment. The pixel P of the image pickup device 1 may be as follows. Figure 10 For example, the transistor TRZ may be arranged adjacent to the side (surface) of the transistor TRG. Figure 11 As shown by the arrow in , the gate electrode 30 may be provided adjacent to the side 22 farthest from the separating portion 60 among the sides of the gate electrode 32 of the transistor TRG.

[0098] exist Figure 12 , at least a portion of the transistor TRZ may be disposed at a position on a diagonal line of the pixel P. At least a portion of the gate electrode 30 of the transistor TRZ may be disposed on a diagonal line of the pixel P. The transistor TRZ may be arranged such that a first portion VG of the gate electrode 30 overlaps with a diagonal line of the pixel P.

[0099] like Figure 13A As shown, when the width of the pixel P is defined as "a", the distance between the center of the first portion VG of the gate electrode 30 and the separation portion 60 may be greater than or equal to one third (=a / 3) of the width a of the pixel P. Figure 13A In the example shown, the distance between the center of the first portion VG and the edge of the separation portion 60 is greater than or equal to a / 3.

[0100] Note that Figure 13B As shown by the arrow in , the minimum distance from the portion of the separation portion 60 close to the transistor TRG to the first portion VG of the gate electrode 30 may be longer than the maximum distance from the same portion of the separation portion 60 to the gate electrode 32 side of the transistor TRG. Furthermore, the minimum distance from the portion of the separation portion 60 close to the transistor TRX to the first portion VG of the gate electrode 30 may be longer than the maximum distance from the same portion of the separation portion 60 to the gate electrode 31 of the transistor TRX. [Function and Effect]

[0101] The photodetector according to the embodiment includes a plurality of pixels and a separation unit (separation unit 60). The plurality of pixels include a first pixel, which includes a photoelectric converter (photoelectric conversion unit 12) arranged in a semiconductor layer (semiconductor layer 10). The separation unit is arranged between pixels adjacent to each other in the semiconductor layer. The first pixel includes a first transistor (transistor TRZ) and a capacitor (capacitor MEM). The first transistor includes a first gate electrode (gate electrode 30) and is configured to transmit charges photoelectrically converted by the photoelectric converter. The first electrode is configured to reach the photoelectric converter in the semiconductor layer. The capacitor is configured to be stacked on the photoelectric converter and is configured to accumulate charges photoelectrically converted by the photoelectric converter. The first gate electrode is arranged in a region of the semiconductor layer away from the separation unit.

[0102] In the photodetector (image pickup device 1) according to the embodiment, the gate electrode 30 of the transistor TRZ is provided in a region of the semiconductor layer 10 that is away from the separating portion 60. Therefore, in the image pickup device 1, the electric field generated between the gate electrode 30 and the separating portion 60 can be weakened, and deterioration of pixel signal quality can be suppressed. A photodetector configured to suppress degradation of signal quality can be realized.

[0103] Next, a modification of the present disclosure will be described. Hereinafter, the same reference numerals will be assigned to the same structural elements as those in the above embodiment, and description thereof will be omitted as appropriate. <2. Modifications> [2-1. Modification 1]

[0104] Although the above embodiment has been described with respect to the configuration example of the pixel, the configuration of the pixel is not limited to the above example. Figure 14 and Figure 15 Each of them is a diagram illustrating a configuration example of a pixel of an image pickup device according to Modification 1 of the present disclosure. Figure 16A This figure illustrates an example circuit configuration of a pixel of an imaging device according to Modification 1. For example, the pixel P may include a transistor TRY. The transistor TRY is configured to control the potential of the capacitor MEM. For example, the transistor TRY is configured to adjust (change) the height of the potential barrier to prevent charge from flowing back from the capacitor MEM to the photoelectric conversion unit 12. The transistor TRY is referred to as a backflow prevention transistor.

[0105] like Figure 14 or Figure 15As shown, multiple components, including transistors TRX, TRY, TRG, and OFG, are arranged around transistor TRZ. These components are arranged to surround transistor TRZ. In this variation, since the gate electrode 30 of transistor TRZ is located in a region of the semiconductor layer 10 away from the separator 60, the generation of a strong electric field between the gate electrode 30 and the separator 60 can be prevented. This can suppress degradation of pixel signal quality.

[0106] Note that Figure 16B As shown in the illustrated example, the pixel P may include a transistor FDG and a capacitor C1. The transistor FDG is configured to electrically connect the floating diffusion FD and the capacitor MEM to each other. For example, the transistor FDG is controlled by a signal SFDG and electrically connects or disconnects the floating diffusion FD and the capacitor C1 to each other.

[0107] The transistor FDG is a switching transistor for setting the above-mentioned conversion efficiency. The capacitor C1 is, for example, a capacitor (CI capacitor) formed by using an insulating film (for example, an oxide film). Note that, as Figure 16C and Figure 16D In the example shown, the pixel P may include only one of the transistor FDG and the capacitor C1. [2-2. Modification 2]

[0108] Figures 17 to 20 1 and 2 are diagrams each illustrating an example of a configuration of a pixel of an image pickup device according to Modification 2. Figure 17 or Figure 18 In the example shown, the pixel P may not have the transistor OFG. Note that, regarding the gate electrode 30 of the transistor TRZ of the pixel P, as shown in FIG. Figure 19 or Figure 20 In the illustrated example, the second portion SG provided on the second surface 11S2 side of the semiconductor layer 10 may be provided so as to be in contact with the separation portion 60 . [2-3. Modification 3]

[0109] Figure 21 and Figure 22 3 are diagrams illustrating a configuration example of a pixel of an image pickup device according to Modification 3. An element such as a transistor or a capacitor may be provided between the transistor TRZ and the transistor TRG. Figure 21 or Figure 22 In the example shown, a portion of the transistor TRX may be disposed between the transistor TRZ and the transistor TRG. The transistor TRZ may be disposed adjacent to the transistor TRG via a portion of the transistor TRX, for example.

[0110] Note that elements other than the transistor TRX, such as the transistor OFG, the transistor TRY, transistors of the read circuit 20, capacitors (e.g., the capacitor C1 described above), etc., may be provided between the transistors TRZ and TRG. In this modification, effects similar to those of the imaging device according to the above-described embodiment can also be achieved. [2-4. Modification 4]

[0111] Figure 23 : is a diagram showing an example of a circuit configuration of a pixel of an image pickup device according to Modification 4. Figure 23 As shown, transistor OFG can be electrically connected to photoelectric converter 12. For example, gate electrode 33 of transistor OFG can be provided to reach photoelectric converter 12 in semiconductor layer 10. Transistor OFG is configured to reset the charge of photoelectric converter 12 without participation of transistor TRZ or the like. <3. Application Examples>

[0112] The imaging apparatus 1 and the like can be applied to any type of electronic equipment having an imaging function, for example, a camera system such as a digital camera or a video camera, or a mobile phone having an imaging function. Figure 24 The overall configuration of the electronic device 1000 is shown.

[0113] The electronic device 1000 includes, for example, a lens group 1001 , an imaging device 1 , a DSP (Digital Signal Processor) circuit 1002 , a frame memory 1003 , a display unit 1004 , a storage unit 1005 , an operation unit 1006 , and a power supply unit 1007 , which are connected to one another via a bus 1008 .

[0114] The lens group 1001 takes in incident light (image light) from a subject and forms an image on the imaging surface of the imaging device 1. The imaging device 1 converts the amount of incident light that forms an image on the imaging surface by the lens group 1001 into an electrical signal on a pixel basis and supplies the electrical signal as a pixel signal to the DSP circuit 1002.

[0115] The DSP circuit 1002 is a signal processing circuit that processes a signal supplied from the imaging device 1. The DSP circuit 1002 outputs image data acquired by processing the signal from the imaging device 1. The frame memory 1003 temporarily stores the image data processed by the DSP circuit 1002 in units of frames.

[0116] The display unit 1004 includes, for example, a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and records image data (such as moving images or still images) captured by the imaging apparatus 1 in a recording medium such as a semiconductor memory or a hard disk.

[0117] The operation unit 1006 outputs operation signals for various functions of the electronic device 1000 according to user operations. The power supply unit 1007 appropriately supplies various types of power used as operating power sources for the DSP circuit 1002, frame memory 1003, display unit 1004, storage unit 1005, and operation unit 1006 to these power supply targets. <4. Application Examples> (Application example of mobile objects)

[0118] The technology according to the present disclosure (the present technology) is applicable to various products. For example, the technology according to the present disclosure can be implemented as a device installed on any type of mobile object such as an automobile, electric vehicle, hybrid vehicle, motorcycle, bicycle, personal mobile device, airplane, drone, ship, robot, etc.

[0119] Figure 25 : is a block diagram showing an example of a schematic configuration of a vehicle control system as an example of a mobile body control system to which the technology according to the embodiment of the present invention can be applied.

[0120] The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. Figure 25 In the illustrated example, a vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an exterior information detection unit 12030, an interior information detection unit 12040, and an integrated control unit 12050. Furthermore, as functional components of the integrated control unit 12050, a microcomputer 12051, a sound / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are illustrated.

[0121] The drive system control unit 12010 controls the operation of devices related to the vehicle's drive system according to various types of programs. For example, the drive system control unit 12010 functions as a control device for a drive force generating device such as an internal combustion engine or a drive motor for generating vehicle drive force, a drive force transmitting mechanism for transmitting drive force to wheels, a steering mechanism for adjusting the vehicle's steering angle, and a braking device for generating vehicle braking force.

[0122] The body system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, power windows, or various lights such as headlights, backup lights, brake lights, turn signals, and fog lights. In this case, the body system control unit 12020 can receive radio waves or signals from various switches transmitted from a mobile device that replaces a key. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door locks, power windows, lights, and the like.

[0123] The vehicle exterior information detection unit 12030 detects information about the exterior of the vehicle, including the vehicle control system 12000. For example, the vehicle exterior information detection unit 12030 is connected to the imaging unit 12031. The vehicle exterior information detection unit 12030 causes the imaging unit 12031 to capture images of the exterior of the vehicle and receives the captured images. Based on the received images, the vehicle exterior information detection unit 12030 can detect objects such as people, vehicles, obstacles, signs, or characters on the road surface, or can detect the distance to such objects.

[0124] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 can be visible light or invisible light such as infrared light.

[0125] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. For example, the in-vehicle information detection unit 12040 is connected to a driver status detection unit 12041 that detects the driver's condition. For example, the driver status detection unit 12041 includes a camera that captures the driver's image. Based on the detection information input from the driver status detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or concentration level, or determine whether the driver is dozing off.

[0126] The microcomputer 12051 can calculate control target values ​​for the driving force generation device, the steering mechanism, or the braking device based on information outside or inside the vehicle obtained by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform coordinated control to implement advanced driver assistance system (ADAS) functions, such as collision avoidance or impact mitigation, vehicle-to-vehicle distance-based following driving, speed maintenance driving, vehicle collision warning, or vehicle lane departure warning.

[0127] In addition, by controlling the driving force generating device, steering mechanism or braking device, etc. based on the information outside or inside the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, the microcomputer 12051 is able to perform collaborative control aimed at achieving automatic driving, etc., wherein the automatic driving enables the vehicle to drive autonomously without relying on the driver's operation.

[0128] In addition, based on the information outside the vehicle obtained by the vehicle exterior information detection unit 12030, the microcomputer 12051 can output a control command to the body system control unit 12020. For example, the microcomputer 12051 can perform cooperative control aimed at preventing glare by controlling the headlights to switch from high beam to low beam, for example, based on the position of a preceding vehicle or an oncoming vehicle detected by the vehicle exterior information detection unit 12030.

[0129] The sound / image output unit 12052 sends an output signal of at least one of sound and image to an output device capable of visually or auditorily notifying the vehicle's passengers or the outside of the vehicle of information. Figure 25 In the example of FIG, as the output device, an audio speaker 12061, a display portion 12062, and an instrument panel 12063 are shown. For example, the display portion 12062 may include at least one of an in-vehicle display and a head-up display.

[0130] Figure 26 12031 is a diagram showing an example of the installation position of the camera unit 12031.

[0131] exist Figure 26 , the camera unit 12031 includes camera units 12101 , 12102 , 12103 , 12104 and 12105 .

[0132] Camera units 12101, 12102, 12103, 12104, and 12105 are, for example, located on the front nose, rearview mirror, rear bumper, and rear door of vehicle 12100, as well as on the upper portion of the windshield within the vehicle. Camera unit 12101 located on the front nose and camera unit 12105 located on the upper portion of the windshield within the vehicle primarily capture images in front of vehicle 12100. Camera units 12102 and 12103 located on the rearview mirror primarily capture images on both sides of vehicle 12100. Camera unit 12104 located on the rear bumper or rear door primarily captures images from the rear of vehicle 12100. Camera unit 12105 located on the upper portion of the windshield within the vehicle primarily detects vehicles ahead, pedestrians, obstacles, traffic lights, traffic signs, lanes, and the like.

[0133] By the way, Figure 26Examples of the imaging ranges of imaging units 12101 through 12104 are shown. Imaging range 12111 represents the imaging range of imaging unit 12101, located on the front nose. Imaging ranges 12112 and 12113 represent the imaging ranges of imaging units 12102 and 12103, respectively, located on the rearview mirrors. Imaging range 12114 represents the imaging range of imaging unit 12104, located on the rear bumper or rear door. For example, by superimposing the image data captured by imaging units 12101 through 12104, a bird's-eye view image of vehicle 12100, viewed from above, can be obtained.

[0134] At least one of the imaging units 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

[0135] For example, based on the distance information obtained from imaging units 12101 to 12104, microcomputer 12051 can determine the distance to each three-dimensional object within imaging ranges 12111 to 12114 and the temporal change in that distance (relative speed to vehicle 12100), thereby identifying the closest three-dimensional object as the preceding vehicle. Specifically, this three-dimensional object is located in the travel path of vehicle 12100 and is traveling in the same direction as vehicle 12100 at a predetermined speed (e.g., equal to or greater than 0 km / h). Furthermore, microcomputer 12051 can pre-set the inter-vehicle distance to be maintained between the preceding vehicle and execute automatic braking control (including follow-up stop control) or automatic acceleration control (including follow-up start control). This allows for cooperative control, such as automated driving, designed to enable the vehicle to travel autonomously without relying on driver input.

[0136] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12501 can classify 3D object data of 3D objects into 3D object data of two-wheeled vehicles, standard vehicles, large vehicles, pedestrians, utility poles, and other 3D objects, extract the classified 3D object data, and use the extracted 3D object data to automatically avoid obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as those that the driver of the vehicle 12100 can visually identify and those that are difficult for the driver of the vehicle 12100 to visually identify. The microcomputer 12051 then determines a collision risk indicating the risk of collision with each obstacle. If the collision risk is equal to or higher than a set value, indicating a collision possibility, the microcomputer 12051 outputs a warning to the driver via the audio speaker 12061 or the display unit 12062, and executes forced deceleration or evasive steering via the drive system control unit 12010. Thus, the microcomputer 12051 can assist driving to avoid collisions.

[0137] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. The microcomputer 12051 can identify pedestrians, for example, by determining whether a pedestrian exists in the images captured by the imaging units 12101 to 12104. For example, this pedestrian identification is performed by extracting feature points from the images captured by the imaging units 12101 to 12104, which are infrared cameras, and performing pattern matching on a series of feature points representing the outline of an object to determine whether the object is a pedestrian. If the microcomputer 12051 determines that a pedestrian exists in the images captured by the imaging units 12101 to 12104 and identifies the pedestrian, the audio / video output unit 12052 controls the display unit 12062 to display a square outline superimposed on the identified pedestrian for emphasis. The audio / video output unit 12052 can also control the display unit 12062 to display an icon representing the pedestrian at a desired location.

[0138] An example of a mobile object control system to which the technology of the present disclosure can be applied has been described above. The technology of the present disclosure can be applied to the imaging unit 12031 among the aforementioned components. Specifically, the imaging device 1 and the like can be applied to the imaging unit 12031. Applying the technology of the present disclosure to the imaging unit 12031 enables the acquisition of high-definition captured images. Consequently, the mobile object control system can utilize the captured images for high-precision control. (Application example of endoscopic surgery system)

[0139] The technology according to the present disclosure (the present technology) is applicable to various products. For example, the technology according to the present disclosure is applicable to an endoscopic surgery system.

[0140] Figure 27 : is a diagram showing a schematic configuration example of an endoscopic surgery system to which the technology according to the embodiment of the present disclosure (the present technology) can be applied.

[0141] exist Figure 27 , a state is shown in which a surgeon (doctor) 11131 is using an endoscopic surgery system 11000 to perform surgery on a patient 11132 who is lying on a bed 11133. As shown in the figure, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 (e.g., a pneumoperitoneum tube 11111 and an energy device 11112), a support arm device 11120 (supporting the endoscope 11100), and a cart 11200 on which various devices used for endoscopic surgery are loaded.

[0142] Endoscope 11100 includes a lens barrel 11101 and a camera 11102 connected to the proximal end of lens barrel 11101. Lens barrel 11101 has a region of a predetermined length from its distal end for insertion into a body cavity of a patient 11132. In the illustrated example, endoscope 11100 is illustrated as a rigid endoscope including lens barrel 11101 having a rigid shape. However, endoscope 11100 may also be a flexible endoscope including lens barrel 11101 having a flexible shape.

[0143] The lens barrel 11101 has an opening at its distal end for mounting an objective lens. A light source device 11203 is connected to the endoscope 11100 so that light generated by the light source device 11203 is guided to the distal end of the lens barrel 11101 via a light guide extending within the lens barrel 11101 and illuminates an observation target in the body cavity of the patient 11132 through the objective lens. It should be noted that the endoscope 11100 can be a forward-looking endoscope, an oblique-looking endoscope, or a side-looking endoscope.

[0144] The camera head 11102 is equipped with an optical system and an imaging element. The optical system focuses reflected light (observation light) from the observation target onto the imaging element. The imaging element photoelectrically converts the observation light to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is transmitted as raw data to the camera control unit (CCU) 11201.

[0145] The CCU 11201 includes a central processing unit (CPU), a graphics processing unit (GPU), and the like, and centrally controls the operations of the endoscope 11100 and the display device 11202. In addition, the CCU 11201 receives an image signal from the camera 11102 and performs various image processing, such as development processing (demosaic processing), on the image signal for displaying an image based on the image signal.

[0146] The display device 11202 displays an image based on an image signal that has been image-processed by the CCU 11201 under the control of the CCU 11201 .

[0147] The light source device 11203 includes a light source such as, for example, a light emitting diode (LED), and provides illumination light to the endoscope 11100 when imaging the surgical area.

[0148] The input device 11204 is an input interface for the endoscopic surgery system 11000. The user can input various types of information or instructions to the endoscopic surgery system 11000 through the input device 11204. For example, the user can input instructions to change the image capture conditions (such as the type of irradiation light, magnification, or focal length) of the endoscope 11100.

[0149] The treatment tool control device 11205 controls the driving of the energy device 11112 for cauterizing or incising tissue, sealing blood vessels, and the like. The pneumoperitoneum device 11206 delivers gas into the body cavity of the patient 11132 via the pneumoperitoneum tube 11111 to insulate the cavity, thereby ensuring the field of view of the endoscope 11100 and the surgeon's working space. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats (e.g., text, images, or graphics).

[0150] It should be noted that the light source device 11203 that provides irradiation light when the surgical area is to be imaged to the endoscope 11100 may include a white light source such as an LED, a laser light source, or a combination thereof. In the case where the white light source includes a combination of red, green, and blue (RGB) laser light sources, since the output intensity and output timing of each color (each wavelength) can be controlled with high precision, the light source device 11203 can perform white balance adjustment of the captured image. In addition, in this case, if the laser beams from each RGB laser light source are irradiated onto the observation target in a time-division manner, and the drive of the imaging element of the camera 11102 is controlled in synchronization with the irradiation timing, it is also possible to capture images corresponding to each of the R, G, and B colors in a time-division manner. According to this method, a color image can be obtained even if a color filter is not provided for the imaging element.

[0151] In addition, the light source device 11203 can be controlled so that the intensity of the light to be output changes at predetermined intervals. By controlling the driving of the imaging element of the camera 11102 in synchronization with the timing of the change in light intensity, images are acquired in a time-division manner and synthesized, and a high dynamic range image without underexposed shadows or overexposed highlights can be generated.

[0152] In addition, the light source device 11203 can be constructed to provide light of a predetermined wavelength band that can be used for special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in human tissue to irradiate light having a narrower wavelength band than the irradiation light (i.e., white light) during ordinary observation, narrowband light observation is performed to image predetermined tissues (e.g., blood vessels in the surface layer of the mucous membrane, etc.) with high contrast. Alternatively, in special light observation, fluorescence observation for obtaining an image by fluorescence generated by irradiation with excitation light can be performed. In fluorescence observation, fluorescence from body tissue can be observed by irradiating excitation light onto body tissue (autofluorescence observation) or a fluorescence image can be obtained by locally injecting an agent (such as indocyanine green (ICG)) into human tissue and irradiating excitation light corresponding to the fluorescence wavelength of the agent onto the human tissue. The light source device 11203 can be constructed to provide narrowband domain light and / or excitation light suitable for the above-mentioned special light observation.

[0153] Figure 28 It shows Figure 27 A block diagram of an example of the functional configuration of the camera 11102 and CCU 11201 is shown.

[0154] The camera 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 for communication.

[0155] The lens unit 11401 is an optical system provided at a position connected to the lens barrel 11101. Observation light taken from the distal end of the lens barrel 11101 is guided to the camera 11102 and introduced into the lens unit 11401. The lens unit 11401 includes a combination of multiple lenses including a zoom lens and a focus lens.

[0156] The number of imaging elements included in the imaging unit 11402 can be one (single-board type) or multiple (multi-board type). For example, in the case where the imaging unit 11402 is constructed as a multi-board type imaging unit, image signals corresponding to each of R, G and B are generated by the imaging elements, and the image signals can be synthesized to obtain a color image. The imaging unit 11402 can also be constructed to have a pair of imaging elements for respectively acquiring image signals for the right eye and image signals for the left eye, thereby being used for three-dimensional (3D) display. If 3D display is performed, the surgeon 11131 can understand the depth of living tissue in the surgical area more accurately. It should be noted that in the case where the imaging unit 11402 is constructed as a stereoscopic type imaging unit, multiple systems of lens units 11401 are provided corresponding to the respective imaging elements.

[0157] In addition, the imaging unit 11402 does not necessarily have to be provided on the camera head 11102. For example, the imaging unit 11402 can be provided inside the lens barrel 11101 immediately behind the objective lens.

[0158] The drive unit 11403 includes an actuator and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera control unit 11405. Therefore, the magnification and focus of the image captured by the imaging unit 11402 can be appropriately adjusted.

[0159] The communication unit 11404 includes communication means for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits an image signal acquired from the imaging unit 11402 to the CCU 11201 as RAW data via the transmission cable 11400.

[0160] In addition, the communication unit 11404 receives a control signal for controlling the driving of the camera 11102 from the CCU 11201, and supplies the control signal to the camera control unit 11405. The control signal includes information related to imaging conditions, such as, for example, information specifying a frame rate for capturing an image, information specifying an exposure value when capturing an image, and / or information specifying a magnification and a focus for capturing an image.

[0161] It should be noted that image capturing conditions such as frame rate, exposure value, magnification, or focus may be specified by the user or may be automatically set based on the acquired image signal by the control unit 11413 of the CCU 11201. In the latter case, an automatic exposure (AE) function, an automatic focus (AF) function, and an automatic white balance (AWB) function are incorporated into the endoscope 11100.

[0162] The camera control unit 11405 controls the driving of the camera 11102 based on the control signal received from the CCU 11201 through the communication unit 11404 .

[0163] The communication unit 11411 includes a communication device for transmitting and receiving various types of information to and from the camera 11102. Through the transmission cable 11400, the communication unit 11411 receives an image signal transmitted thereto from the camera 11102.

[0164] In addition, the communication unit 11411 transmits a control signal for controlling the driving of the camera 11102 to the camera 11102. The image signal and the control signal can be transmitted through electrical communication, optical communication, or the like.

[0165] The image processing unit 11412 performs various image processing on the image signal in the form of RAW data sent thereto from the camera 11102 .

[0166] The control unit 11413 performs various types of control related to imaging of the operation area, etc. by the endoscope 11100 and display of the captured image obtained by imaging the operation area, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102 .

[0167] Furthermore, control unit 11413 controls display device 11202 to display a captured image of the surgical area, etc., based on the image signal processed by image processing unit 11412. Therefore, control unit 11413 can use various image recognition technologies to identify various objects in the captured image. For example, control unit 11413 can detect the shape and color of the edges of objects contained in the captured image to identify surgical tools such as forceps, specific living areas, bleeding, fog when using energy device 11112, and so on. When control unit 11413 controls display device 11202 to display the captured image, control unit 11413 can use the recognition results to display various types of surgical support information superimposed on the image of the surgical area. Displaying this superimposed surgical support information and presenting it to surgeon 11131 can reduce the burden on surgeon 11131, allowing surgeon 11131 to perform surgery reliably.

[0168] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 to each other is an electric signal cable capable of being used for electric signal communication, an optical fiber capable of being used for optical communication, or a composite cable capable of being used for electric and optical communication.

[0169] Here, although communication is performed by wired communication using the transmission cable 11400 in the illustrated example, communication between the camera 11102 and the CCU 11201 may be performed by wireless communication.

[0170] An example of an endoscopic surgical system to which the technology of the present disclosure can be applied has been described above. The technology of the present disclosure is applicable to the imaging unit 11402 provided on the camera head 11102 of the endoscope 11100, among the components described above. Applying the technology of the present disclosure to the imaging unit 11402 enables the provision of an endoscope 11100 with enhanced clarity.

[0171] While the present disclosure has been described with reference to embodiments, variations, applicable examples, and application examples, the present technology is not limited to the above-described embodiments and the like, and various variations are possible. For example, while the above-described variations are described as variations of the above-described embodiments, the configurations of these variations may be appropriately combined. For example, the present disclosure is not limited to backside-illuminated image sensors and may be applied to frontside-illuminated image sensors.

[0172] Although this embodiment is described using an imaging device as an example, it is sufficient for the photodetector disclosed herein to receive incident light and convert it into electric charge. The output signal can be an image information signal or a distance measurement information signal. The photodetector (imaging device) can be applied to image sensors, distance measurement sensors, and the like.

[0173] The light detector according to the present disclosure can also be applied to a distance measurement sensor configured to measure distance using a TOF (Time of Flight) method. The light detector (camera) can also be applied to a sensor configured to detect events, such as an event-driven sensor (referred to as an EVS (Event Vision Sensor), EDS (Event Driven Sensor), DVS (Dynamic Vision Sensor), etc.).

[0174] According to an embodiment of the present disclosure, a photodetector includes a plurality of pixels and a separation portion. The plurality of pixels include a first pixel including a photoelectric conversion unit provided in a semiconductor layer. The separation unit is provided between adjacent pixels in the semiconductor layer. The first pixel includes a first transistor and a capacitor. The first transistor includes a first gate electrode and is configured to transmit charges photoelectrically converted by the photoelectric conversion unit. The first electrode is configured to reach the photoelectric conversion unit in the semiconductor layer. The capacitor is configured to be stacked on the photoelectric conversion unit and is configured to accumulate charges photoelectrically converted by the photoelectric conversion unit. The first gate electrode is provided in a region of the semiconductor layer away from the separation unit. Therefore, a photodetector configured to suppress degradation of signal quality can be realized.

[0175] It should be noted that the effects described in this specification are merely exemplary effects and are non-limiting, and any other effects may be achieved. In addition, the present disclosure may also be configured as follows. (1) A light detector comprising: a plurality of pixels including a first pixel including a photoelectric conversion portion provided in a semiconductor layer; and a separation portion provided between a plurality of adjacent pixels in the semiconductor layer, wherein The first pixel includes: a first transistor including a first gate electrode provided in the semiconductor layer so as to reach the photoelectric conversion portion and configured to transfer charges photoelectrically converted by the photoelectric conversion portion; and a capacitor provided so as to be stacked on the photoelectric conversion portion and configured to accumulate charges photoelectrically converted by the photoelectric conversion portion, and The first gate electrode is provided in a region of the semiconductor layer that is away from the separation portion. (2) The photodetector according to (1) above, wherein The first pixel includes a floating diffusion and a second transistor configured to electrically connect the capacitor and the floating diffusion to each other, and The first transistor is disposed adjacent to the second transistor. (3) The light detector according to (2) above further includes: A plurality of elements including the second transistor, wherein The plurality of elements are disposed to surround the first transistor. (4) The photodetector according to the above (3), wherein the separation portion is provided so as to surround the plurality of elements in a plan view. (5) The photodetector according to any one of (2) to (4) above, further comprising: The third transistor is provided around the first transistor, wherein: At least a portion of the third transistor is disposed between the first transistor and the second transistor. (6) The photodetector according to any one of (2) to (5) above, further comprising: The third transistor is provided around the first transistor, wherein: The second transistor and the third transistor are arranged to sandwich the first transistor. (7) The photodetector according to any one of (2) to (6) above, wherein: The second transistor includes a second gate electrode provided on the first surface side of the semiconductor layer, and In a plan view, the first gate electrode is disposed adjacent to the second gate electrode. (8) The photodetector according to the above (7), wherein the first gate electrode is provided adjacent to a side farthest from the separation portion among a plurality of sides of the second gate electrode. (9) The photodetector according to (7) or (8) above, wherein a distance between the first gate electrode and the separation portion is greater than a distance between the second gate electrode and the separation portion. (10) The photodetector according to any one of (1) to (9) above, wherein at least a portion of the first transistor is provided on a diagonal line of the first pixel in a plan view. (11) The photodetector according to any one of (1) to (10) above, wherein at least a portion of the first gate electrode is provided on a diagonal line of the first pixel in a plan view. (12) The photodetector according to any one of (1) to (11) above, wherein The first gate electrode includes a first portion provided in the semiconductor layer so as to reach the photoelectric conversion unit and a second portion provided on the first surface side of the semiconductor layer, and A distance between the first portion and the separating portion is greater than or equal to one third of the first pixel width. (13) The photodetector according to any one of (1) to (12) above, wherein at least a portion of the first transistor is provided at the center of the pixel in a plan view. (14) The photodetector according to any one of (1) to (13) above, wherein The first pixel includes a floating diffusion and a second transistor configured to electrically connect the capacitor and the floating diffusion to each other, and The first gate electrode is located closer to the center of the pixel than the second transistor. (15) The light detector according to (14) above further includes: The third transistor is provided around the first transistor, wherein: The first gate electrode is located closer to the center of the pixel than the second transistor and the third transistor. (16) The photodetector according to any one of (1) to (15) above, further comprising: a light shielding portion formed so as to be buried in the semiconductor layer, wherein The light shielding portion extends in a direction perpendicular to a thickness direction of the semiconductor layer. (17) The photodetector according to the above (16), wherein the light shielding portion is not provided between the photoelectric conversion portion and the capacitor. (18) The photodetector according to any one of (1) to (17) above, wherein The semiconductor layer includes a first surface and a second surface opposite to the first surface, and The separation portion is provided between the first surface and the second surface. (19) The photodetector according to any one of (1) to (18) above, wherein the separation portion is provided so as to surround the photoelectric conversion portion in the semiconductor layer. (20) An electronic device, comprising: Optical systems; and a light detector that receives light transmitted through the optical system, The light detector comprises: a plurality of pixels including a first pixel including a photoelectric conversion portion provided in a semiconductor layer; and a separation portion provided between a plurality of adjacent pixels in the semiconductor layer, wherein The first pixel includes: a first transistor including a first gate electrode provided in the semiconductor layer so as to reach the photoelectric conversion portion and configured to transfer charges photoelectrically converted by the photoelectric conversion portion; and a capacitor provided so as to be stacked on the photoelectric conversion portion and configured to accumulate charges photoelectrically converted by the photoelectric conversion portion, and The first gate electrode is provided in a region of the semiconductor layer that is away from the separation portion.

[0176] This application claims priority from Japanese Patent Application No. JP2023-059433 filed with the Japan Patent Office on March 31, 2023, the entire contents of which are incorporated herein by reference.

[0177] It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may be made according to design requirements and other factors as long as they are within the scope of the appended claims or the equivalents thereof.

Claims

1. A light detector comprising: a plurality of pixels including a first pixel including a photoelectric conversion portion provided in a semiconductor layer; and a separation portion provided between a plurality of adjacent pixels in the semiconductor layer, wherein The first pixel includes: a first transistor including a first gate electrode provided in the semiconductor layer so as to reach the photoelectric conversion portion and configured to transfer charges photoelectrically converted by the photoelectric conversion portion; and a capacitor provided so as to be stacked on the photoelectric conversion portion and configured to accumulate charges photoelectrically converted by the photoelectric conversion portion, and The first gate electrode is provided in a region of the semiconductor layer that is away from the separation portion.

2. The light detector according to claim 1, wherein The first pixel includes a floating diffusion and a second transistor configured to electrically connect the capacitor and the floating diffusion to each other, and The first transistor is disposed adjacent to the second transistor.

3. The light detector according to claim 2, further comprising: A plurality of elements including the second transistor, wherein The plurality of elements are disposed to surround the first transistor.

4. The light detector according to claim 3, wherein The separation portion is provided to surround the plurality of elements in a plan view.

5. The light detector according to claim 2, further comprising: The third transistor is provided around the first transistor, wherein: At least a portion of the third transistor is disposed between the first transistor and the second transistor.

6. The light detector according to claim 2, further comprising: The third transistor is provided around the first transistor, wherein: The second transistor and the third transistor are arranged to sandwich the first transistor.

7. The light detector according to claim 2, wherein The second transistor includes a second gate electrode provided on the first surface side of the semiconductor layer, and In a plan view, the first gate electrode is disposed adjacent to the second gate electrode.

8. The light detector according to claim 7, wherein The first gate electrode is provided adjacent to a side farthest from the separation portion among a plurality of sides of the second gate electrode.

9. The light detector according to claim 7, wherein A distance between the first gate electrode and the separation portion is greater than a distance between the second gate electrode and the separation portion.

10. The light detector according to claim 1, wherein In a plan view, at least a portion of the first transistor is disposed on a diagonal line of the first pixel.

11. The light detector according to claim 1, wherein In a plan view, at least a portion of the first gate electrode is disposed on a diagonal line of the first pixel.

12. The light detector according to claim 1, wherein The first gate electrode includes a first portion provided in the semiconductor layer so as to reach the photoelectric conversion unit and a second portion provided on the first surface side of the semiconductor layer, and A distance between the first portion and the separating portion is greater than or equal to one third of the first pixel width.

13. The light detector according to claim 1, wherein At least a portion of the first transistor is disposed at a center of the pixel in a plan view.

14. The light detector according to claim 1, wherein The first pixel includes a floating diffusion and a second transistor configured to electrically connect the capacitor and the floating diffusion to each other, and The first gate electrode is located closer to the center of the pixel than the second transistor.

15. The light detector according to claim 14, further comprising: The third transistor is provided around the first transistor, wherein: The first gate electrode is located closer to the center of the pixel than the second transistor and the third transistor.

16. The light detector of claim 1 , further comprising: a light shielding portion formed so as to be buried in the semiconductor layer, wherein The light shielding portion extends in a direction perpendicular to a thickness direction of the semiconductor layer.

17. The light detector according to claim 16, wherein The light shielding portion is not provided between the photoelectric conversion portion and the capacitor.

18. The light detector according to claim 1, wherein The semiconductor layer includes a first surface and a second surface opposite to the first surface, and The separation portion is provided between the first surface and the second surface.

19. The light detector according to claim 1, wherein The separation portion is provided so as to surround the photoelectric conversion portion in the semiconductor layer.

20. An electronic device comprising: Optical system; and a light detector that receives light transmitted through the optical system, The light detector comprises: a plurality of pixels including a first pixel including a photoelectric conversion portion provided in a semiconductor layer; and a separation portion provided between a plurality of adjacent pixels in the semiconductor layer, wherein The first pixel includes: a first transistor including a first gate electrode provided in the semiconductor layer so as to reach the photoelectric conversion portion and configured to transfer charges photoelectrically converted by the photoelectric conversion portion; and a capacitor provided so as to be stacked on the photoelectric conversion portion and configured to accumulate charges photoelectrically converted by the photoelectric conversion portion, and The first gate electrode is provided in a region of the semiconductor layer that is away from the separation portion.

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