High-frequency high-pressure low-temperature plasma energy platform

Abstract

According to the high-frequency high-voltage low-temperature plasma energy platform, an electrode and a tool bit are connected through a control panel, digital frequency and waveform are directly synthesized through the control panel, core modules of the control panel are a field-programmable gate array and a digital-to-analog converter, and frequency adjustment can be achieved. When the control panel is in a no-load and on-load working state, the cutting performance of the tool bit is good, and the electric energy output fluctuation is small. The power supply device comprises a mains supply access device and a power regulator, the ratio of the effective value of the total harmonic current to the effective value of the fundamental current of the input current is suppressed, the adverse effect on a power grid is reduced, and post-stage stable voltage is obtained and is made to be 400 V. And the isolator is electrically connected with the power regulator, so that the switching frequency is improved, and the ripple of the direct-current voltage is further reduced. And the low-frequency voltage stabilizer provides envelope direct-current voltage for the post-stage inverter circuit. The damping selector connects damping of different magnitudes in series to the post-stage inverter circuit, and provides different impedance channels for final output waveform attenuation.

Description

Technical Field

[0001] The present application relates to the technical field of plasma energy platforms, and in particular to a high-frequency, high-pressure, low-temperature plasma energy platform. Background Art

[0002] With the advancement of science and technology, medical cutting technology has developed into electric knife technology in addition to traditional mechanical knives. Electric knife is a high-frequency electric knife, which is an electrosurgical instrument that replaces mechanical scalpels for tissue cutting. It heats the cutting target when the high-frequency and high-voltage current generated by the effective electrode tip comes into contact with the cutting target, achieving separation and coagulation of the cutting target, thereby achieving the purpose of cutting and hemostasis. The charge density of traditional high-frequency electric knives is relatively low, and relying on high-frequency, high-pressure, low-temperature plasma energy platforms is the current technical direction of high-charge-density plasma energy platforms. At present, high-frequency, high-pressure, low-temperature plasma energy platforms have the disadvantage of unstable output power, which results in poor cutting effect of high-frequency electric knives. For this reason, it is necessary to propose a high-frequency, high-pressure, low-temperature plasma energy platform to address the disadvantage of unstable output power of traditional high-frequency, high-pressure, low-temperature plasma energy platforms. Summary of the Invention

[0003] Based on this, it is necessary to propose a high-frequency, high-pressure, low-temperature plasma energy platform to address the drawbacks of unstable power output of traditional high-frequency, high-pressure, low-temperature plasma energy platforms.

[0004] The present application provides a high-frequency, high-pressure, low-temperature plasma energy platform electrically connected to the mains, comprising:

[0005] A control board is connected to an electrode and a cutter head, wherein the electrode is a negative input terminal and the cutter head is a positive output terminal;

[0006] A power supply, comprising a mains power access device and a power conditioner, wherein the mains power access device is electrically connected to the power conditioner, the power conditioner is electrically connected to the control board, and the mains power access device is electrically connected to the mains;

[0007] an isolator, electrically connected to the power regulator;

[0008] a low-frequency voltage stabilizer, electrically connected to the isolator, and the low-frequency voltage stabilizer is electrically connected to the control board;

[0009] a damping selector electrically connected to the low-frequency voltage regulator, wherein the damping selector is electrically connected to the control board;

[0010] an inverter bridge electrically connected to the damping selector, and the inverter bridge electrically connected to the control board;

[0011] A transformer separator is electrically connected to the inverter bridge, and the transformer separator is electrically connected to the control board.

[0012] This application relates to a high-frequency, high-voltage, low-temperature plasma energy platform. The control board connects the electrode and the cutting head via a control board, enabling the control board to directly synthesize digital frequency and waveforms. The core modules of the control board are an FPGA (Field Programmable Gate Array) and a DAC (Digital to Analog Converter). Frequency adjustment is achieved through the FPGA and DAC modules. During power output, the control board can achieve constant voltage and current output to the target, achieving excellent cutting performance under both no-load and loaded conditions, with minimal power output fluctuation. The power supply includes a mains power connector and a power regulator, which suppresses the ratio of the total harmonic current RMS value to the fundamental current RMS value of the input current, mitigating adverse effects on the power grid and stabilizing the voltage at the downstream stage, maintaining it at 400V. An isolator is electrically connected to the power regulator, increasing the switching frequency and further reducing DC voltage ripple. A low-frequency voltage regulator provides an envelope DC voltage for the downstream inverter circuit. A damping selector inserts different damping levels into the downstream inverter circuit, providing different impedance channels for attenuation of the final output waveform. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a structural connection diagram of a high-frequency, high-pressure, low-temperature plasma energy platform provided in one embodiment of the present application.

[0014] Figure 2 This is a schematic diagram of the structural connection of a control board, isolator, and low-frequency voltage regulator of a high-frequency, high-pressure, low-temperature plasma energy platform provided in one embodiment of the present application.

[0015] Figure 3 This is a structural connection diagram of a control panel, isolator, low-frequency voltage regulator, and damping selector of a high-frequency, high-pressure, low-temperature plasma energy platform provided in one embodiment of the present application.

[0016] Figure 4 This is a schematic diagram of the structural connection of a control board and a low-frequency voltage regulator of a high-frequency, high-pressure, low-temperature plasma energy platform provided in one embodiment of the present application.

[0017] Figure 5 This is a structural connection diagram of a control panel, a low-frequency voltage stabilizer, and a damping selector of a high-frequency, high-pressure, and low-temperature plasma energy platform provided in one embodiment of the present application.

[0018] Figure 6 This invention provides a structural connection diagram of a control board, isolator, low-frequency voltage regulator, damping selector, and inverter bridge of a high-frequency, high-pressure, and low-temperature plasma energy platform in accordance with one embodiment of the present application.

[0019] Figure 7This is a schematic diagram of the structural connection of a first multivibrator, a secondary voltage stabilizer, a second electrical damper, and an inverter bridge of a high-frequency, high-pressure, and low-temperature plasma energy platform provided in one embodiment of the present application.

[0020] Figure 8 This is a schematic diagram of the structural connection of a second multivibrator, an inverter bridge, and a transformer separator of a high-frequency, high-pressure, low-temperature plasma energy platform provided in one embodiment of the present application.

[0021] Reference numerals:

[0022] 100-control board; 110-electrode; 120-cutting head; 130-monostable; 131-primary latch;

[0023] 132-secondary latch; 141-inverter gate; 142-NPN MOS tube; 143-flash diode;

[0024] 144-photosensitive varistor; 145-electronic varistor; 146-latch NPN IGBT;

[0025] 147- latch PNP type IGBT; 150- first multivibrator; 160- second multivibrator;

[0026] 200-power supply; 210-mains power access device; 220-power conditioner; 300-isolator;

[0027] 400- low frequency voltage regulator; 410- primary voltage regulator; 411- first inductor; 412- second inductor;

[0028] 413 - third inductor; 414 - first N-type IGBT; 415 - second N-type IGBT; 420 - secondary voltage regulator;

[0029] 500-damping selector; 510-first electrical damper; 511-bypass switch; 512-third N-type IGBT;

[0030] 513 - fourth N-type IGBT; 514 - fourth inductor; 520 - second resistor; 521 - fifth N-type IGBT;

[0031] 522 - sixth N-type IGBT; 523 - fifth inductor; 600 - inverter bridge; 610 - first P-type IGBT;

[0032] 620-second P-type IGBT; 630-third P-type IGBT; 640-fourth P-type IGBT;

[0033] 700-transformer separator; 710-primary coil; 720-first secondary coil; 730-second secondary coil;

[0034] 740-Third secondary coil. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical solutions and advantages of this application more clearly understood, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0036] The present application provides a high-frequency, high-pressure, low-temperature plasma energy platform.

[0037] like Figure 1 As shown, in one embodiment of the present application, a high-frequency, high-voltage, low-temperature plasma energy platform is electrically connected to the mains, including a control board 100, a power supply 200, an isolator 300, a low-frequency voltage regulator 400, a damping selector 500, an inverter bridge 600 and a transformer separator 700.

[0038] The control board 100 is connected to an electrode 110 and a cutter head 120 , wherein the electrode 110 is a negative input terminal and the cutter head 120 is a positive output terminal.

[0039] Specifically, the control board 100 connects the electrode 110 and the cutting head 120, enabling direct synthesis of digital frequency and waveforms. The core modules of the control board 100 are a field programmable gate array (FPGA) and a digital to analog converter (DAC), enabling frequency adjustment. During power output, the control board 100 maintains constant voltage and current output, delivering excellent cutting performance in both no-load and loaded conditions, with minimal power output fluctuations.

[0040] The power supply 200 includes a mains power access device 210 and a power conditioner 220 . The mains power access device 210 is electrically connected to the power conditioner 220 . The power conditioner 220 is electrically connected to the control board 100 . The mains power access device 210 is electrically connected to the mains.

[0041] Specifically, the power supply 200 includes a mains access device 210 and a power conditioner 220, which suppresses the ratio of the total harmonic current effective value to the fundamental current effective value of the input current, reduces the adverse impact on the power grid, and stabilizes the voltage of the subsequent stage so that the subsequent stage voltage is at 400V.

[0042] The isolator 300 is electrically connected to the power regulator 220 .

[0043] Specifically, the isolator 300 is electrically connected with the power regulator 220, the switching frequency is improved, and the ripple of the direct current voltage is further reduced.

[0044] The low-frequency voltage stabilizer 400 is electrically connected with the isolator 300, and the low-frequency voltage stabilizer 400 is electrically connected with the control board 100.

[0045] Specifically, the low-frequency voltage stabilizer 400 provides an envelope direct current voltage for the rear-stage inverter circuit. The damping selector 500 connects different sizes of damping to the rear-stage inverter circuit, and provides different impedance channels for waveform attenuation of the final output.

[0046] The damping selector 500 is electrically connected with the low-frequency voltage stabilizer 400, and the damping selector 500 is electrically connected with the control board 100.

[0047] Specifically, the damping selector 500 connects different sizes of damping to the rear-stage inverter circuit, and provides different impedance channels for waveform attenuation of the final output.

[0048] The inverter bridge 600 is electrically connected with the damping selector 500, and the inverter bridge 600 is electrically connected with the control board 100.

[0049] Specifically, the inter-bridge impedance of the high-frequency inverter bridge 600 can prevent short circuit and smooth the waveform.

[0050] The transformer separator 700 is electrically connected with the inverter bridge 600, and the transformer separator 700 is electrically connected with the control board 100.

[0051] Specifically, the relay selects different transformer secondary winding, cooperates with the voltage of the primary side, and outputs different amplitude voltages.

[0052] It is worth mentioning that the high-frequency high-voltage low-temperature plasma energy platform based on high-frequency high-voltage pulse monopole plasma technology has high charge density, can provide a high-energy platform for rapid cutting of the plasma knife, and solves the problems of tissue adhesion and more smoke.

[0053] More specifically, under the electric field emitted by the high-frequency high-voltage low-temperature plasma energy platform, the tool head breaks the molecular bonds in the tissue, and then realizes low-temperature cutting. The high-frequency high-voltage low-temperature plasma energy platform can realize an electric field change above 1M frequency and a working voltage above 5000 volts.

[0054] This embodiment directly synthesizes digital frequencies and waveforms using a control board 100. The core modules of the control board 100 are a field programmable gate array (FPGA) and a digital to analog converter (DAC). Frequency adjustment is achieved through the FPGA and DAC modules. During power output, the control board 100 achieves constant voltage and current output to the target, delivering excellent cutting performance in both no-load and loaded conditions and minimal power output fluctuations. This addresses the issue of unstable power output associated with conventional high-frequency, high-pressure, and low-temperature plasma energy platforms.

[0055] like Figure 2 As shown, in one embodiment of the present application, the control board 100 includes a monostable 130. The low-frequency voltage regulator 400 includes a primary voltage regulator 410 and a secondary voltage regulator 420. The output end of the isolator 300 is electrically connected to the input end of the primary voltage regulator 410. The output end of the isolator 300 is electrically connected to the input end of the secondary voltage regulator 420. The monostable 130 is electrically connected to the input end of the primary voltage regulator 410. The monostable 130 is electrically connected to the input end of the secondary voltage regulator 420.

[0056] Specifically, the primary regulator 410 and the secondary regulator 420 provide an envelope DC voltage for the subsequent inverter circuit. The choice between the primary regulator 410 and the secondary regulator 420 can provide different levels of DC voltage required for different output gears. The switching frequency of the primary regulator 410 and the secondary regulator 420 is in the kHz range, enabling slow charging and discharging of charge to achieve stable output power. Only the primary regulator 410, or only the secondary regulator 420, or both the primary regulator 410 and the secondary regulator 420 can be turned off. The primary regulator 410 can implement a closed-loop analog signal, while the secondary regulator 420 can implement an open-loop analog signal. Overcurrent in the primary regulator 410 and the secondary regulator 420 will shut down the bridge circuit, and the signal will be transmitted to the control board 100. The primary voltage regulator 410 and the secondary voltage regulator 420 start the discharge mode about 5 ms before the subsequent damping selector 500 circuit stops working in each working cycle.

[0057] like Figure 3As shown, in one embodiment of the present application, the primary regulator 410 and the secondary regulator 420 have the same structure. The primary regulator 410 includes a first inductor 411, a second inductor 412, a third inductor 413, a first N-type IGBT 414, and a second N-type IGBT 415. The output end of the isolator 300 is electrically connected to one end of the first inductor 411. The other end of the first inductor 411 is electrically connected to the drain of the first N-type IGBT 414. The source of the first N-type IGBT 414 is electrically connected to the first end of the third inductor 413. The second end of the third inductor 413 is electrically connected to the damping selector 500. The second inductor 412 is electrically connected to the connection link between the source of the first N-type IGBT 414 and the third inductor 413. The drain of the second N-type IGBT 415 is electrically connected to the source of the first N-type IGBT 414. The source of the second N-type IGBT 415 is grounded.

[0058] Specifically, the inductor can achieve magnetic saturation in the process of receiving charges driven by voltages of different switching frequencies, and can achieve stable voltage output when the inductor is in the process of changing from magnetic saturation to magnetic unsaturation.

[0059] like Figure 2 As shown, in one embodiment of the present application, the monostable 130 includes a primary latch 131 and a secondary latch 132. The primary latch 131 is electrically connected to the primary voltage regulator 410. The secondary latch 132 is electrically connected to the secondary voltage regulator 420. The primary latch 131 and the secondary latch 132 have the same structure.

[0060] Specifically, both the primary latch 131 and the secondary latch 132 can achieve pulse mutual exclusion and overcurrent blocking.

[0061] like Figure 4As shown, in one embodiment of the present application, the primary latch 131 includes a NOT gate 141, an NPN MOS transistor 142, a flash diode 143, a photoresistor 144, an electronic resistor 145, a latching NPN IGBT 146, and a latching PNP IGBT 147. The first output terminal of the primary voltage regulator 410 is electrically connected to the input terminal of the NOT gate 141. The output terminal of the NOT gate 141 is electrically connected to the gate of the NPN MOS transistor 142. The drain of the NPN MOS transistor 142 is electrically connected to the weak power supply of the power supply 200. The source of the NPN MOS transistor 142 is electrically connected to the anode of the flash diode. The cathode of the flash diode is grounded. The flash diode is attached to the outer circumference of the photoresistor 144. The weak power supply of the power supply 200 is electrically connected to one end of the photoresistor 144. The other end of the photoresistor 144 is electrically connected to the signal end of the electronic resistor 145. The first output end of the electronic resistor 145 is electrically connected to the gate of the latching NPN IGBT 146. The second output end of the electronic resistor 145 is electrically connected to the gate of the latching PNP IGBT 147. The weak power supply of the power supply 200 is electrically connected to the drain of the latching NPN IGBT 146. The source of the latching NPN IGBT 146 is electrically connected to the first receiving end of the energy output board of the primary regulator 410. The source of the latching NPN IGBT 146 is electrically connected to the drain of the latching PNP IGBT 147. The source of the latching PNP IGBT 147 is electrically connected to the second receiving end of the energy output board of the primary regulator 410.

[0062] Specifically, a flash diode is a light-emitting diode. The NOT gate 141 can adapt to a high-level signal or a low-level signal from the voltage response board. The NPN MOS transistor 142 can achieve a flashing frequency of the flash diode based on the signal output by the NOT gate 141. In practice, when the NPN MOS transistor 142 receives a low level, the flash diode circuit is cut off. When the NPN MOS transistor 142 receives a high level, the flash diode circuit is turned on.

[0063] When light of varying brightness is received by the photovaristor 144, the resistance of the photovaristor 144 changes. When the resistance of the photovaristor 144 changes, the electronic resistor 145 outputs different level signals at its first and second output terminals, depending on the voltage received at the signal terminal. This, in turn, implements the push-pull function of the latched NPN IGBT 146 and latched PNP IGBT 147.

[0064] The push-pull function of the latched NPN IGBT146 and the latched PNP IGBT147 uses the last pulse of OUT1_P to latch the two delayed voltage values ​​of OUT1_2 after each working cycle, and determines whether OUT1_2 is at a safe voltage by the width of the output high pulse of the optocoupler.

[0065] Under normal conditions, the optocoupler outputs a narrow high pulse or remains low. Under abnormal conditions, the optocoupler outputs a wide high pulse or remains high. The preceding circuit will have discharged its power approximately 5ms before the OUT1_P pulse stops.

[0066] like Figure 5 and Figure 6 As shown, in one embodiment of the present application, the control board 100 further includes a first multivibrator 150. The damping selector 500 includes a first electrical damper 510 and a second electrical damper 520. The first electrical damper 510 is electrically connected to the primary voltage regulator 410. The second electrical damper 520 is electrically connected to the secondary voltage regulator 420. The first electrical damper 510 includes a bypass switch 511, a third N-type IGBT 512, a fourth N-type IGBT 513, and a fourth inductor 514. The drain of the third N-type IGBT 512 is electrically connected to the second end of the third inductor 413. The drain of the fourth N-type IGBT 513 is electrically connected to the source of the third N-type IGBT 512. The fourth inductor 514 is electrically connected to the connection link between the drain of the fourth N-type IGBT 513 and the source of the third N-type IGBT 512. The source of the fourth N-type IGBT 513 is electrically connected to the inverter bridge 600. The gate of the third N-type IGBT 512 is electrically connected to the first multivibrator 150. The gate of the fourth N-type IGBT 513 is electrically connected to the first multivibrator 150. The bypass switch 511 is electrically connected to the connection link between the drain of the third N-type IGBT 512 and the source of the fourth N-type IGBT 513.

[0067] Specifically, the first multivibrator 150 can realize delayed sampling, the first multivibrator 150 can also realize overvoltage protection, the first multivibrator 150 can also keep the pulses of different channels mutually exclusive with the bypass switch 511, and at the same time, the first multivibrator 150 can also realize bypass opening and closing, and the first multivibrator 150 can also perform overcurrent judgment effectively.

[0068] The first and second resistance snubbers 510, 520, insert different damping values ​​into the circuit of the subsequent inverter bridge 600, providing different impedance paths for attenuation of the final output waveform. The damping of the first resistance snubber 510 can be turned off or on. The first resistance snubber 510 has a bypass switch 511.

[0069] like Figure 7 As shown, in one embodiment of the present application, the second electrical damper 520 includes a fifth N-type IGBT 521, a sixth N-type IGBT 522, and a fifth inductor 523. The drain of the fifth N-type IGBT 521 is electrically connected to the secondary regulator 420. The drain of the sixth N-type IGBT 522 is electrically connected to the source of the fifth N-type IGBT 521. The fifth inductor 523 is electrically connected to the connection link between the drain of the sixth N-type IGBT 522 and the source of the fifth N-type IGBT 521. The source of the sixth N-type IGBT 522 is electrically connected to the inverter bridge 600. The gate of the fifth N-type IGBT 521 is electrically connected to the first multivibrator 150. The gate of the sixth N-type IGBT 522 is electrically connected to the first multivibrator 150.

[0070] Specifically, the second electrical damper 520 can operate independently when the bypass switch 511 is turned on. After each operating cycle (button), the final pulse is used to latch two delayed voltage values, and the width of the optocoupler's output high pulse is used to determine whether the path is at a safe voltage. Under normal circumstances, the optocoupler's output high pulse is very narrow or remains low. Under abnormal circumstances, the optocoupler's output high pulse is very wide or remains high.

[0071] like Figure 8 As shown, in one embodiment of the present application, the control board 100 further includes a second multivibrator 160. The inverter bridge 600 includes a first P-type IGBT 610, a second P-type IGBT 620, a third P-type IGBT 630, and a fourth P-type IGBT 640. The drain of the first P-type IGBT 610 is electrically connected to the source of the fourth N-type IGBT 513. The drain of the second P-type IGBT 620 is electrically connected to the source of the fourth N-type IGBT 513. The source of the first P-type IGBT 610 is electrically connected to the drain of the third P-type IGBT 630. The source of the second P-type IGBT 620 is electrically connected to the drain of the fourth P-type IGBT 640. The source of the third P-type IGBT 630 is grounded. The source of the fourth P-type IGBT 640 is grounded. The gate of the first P-type IGBT 610 is electrically connected to the second multivibrator 160. The gate of the second P-type IGBT 620 is electrically connected to the second multivibrator 160 , the gate of the third P-type IGBT 630 is electrically connected to the second multivibrator 160 , and the gate of the fourth P-type IGBT 640 is electrically connected to the second multivibrator 160 .

[0072] Specifically, the on-off combination of the first, second, third, and fourth P-type IGBTs (IGBTs) (610, 620, 630, and 640) enables normal operation within a 1 MHz frequency range. These components form an H-bridge, which can achieve a 50% duty cycle. Furthermore, impedance can be connected in series between the H-bridges to prevent short circuits and smooth the voltage waveform.

[0073] like Figure 8 As shown, in one embodiment of the present application, the transformer separator 700 includes a primary coil 710, a first secondary coil 720, a second secondary coil 730, and a third secondary coil 740. The first end of the primary coil 710 is electrically connected to the source of the first P-type IGBT 610. The second end of the primary coil 710 is electrically connected to the source of the second P-type IGBT 620. One or more of the first secondary coil 720, the second secondary coil 730, and the third secondary coil 740 are output ends of a high-frequency, high-pressure, low-temperature plasma energy platform.

[0074] Specifically, the relay selects different secondary windings of the transformer, such as different combinations of the first secondary winding 720, the second secondary winding 730, and the third secondary winding 740, to output voltages of different amplitudes in accordance with the voltage of the primary winding 710. Furthermore, the transformer separator 700 can isolate the inside and outside of the transformer, and can also isolate DC power.

[0075] The various technical features of the above-described embodiments can be combined arbitrarily, and the execution order of the method steps is not restricted. In order to make the description concise, not all possible combinations of the various technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0076] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present application shall be determined by the appended claims.

Claims

1. A high-frequency, high-pressure, low-temperature plasma energy platform, electrically connected to the mains, characterized in that: include: A control board is connected to an electrode and a cutter head, wherein the electrode is a negative input terminal and the cutter head is a positive output terminal; A power supply, comprising a mains power access device and a power conditioner, wherein the mains power access device is electrically connected to the power conditioner, the power conditioner is electrically connected to the control board, and the mains power access device is electrically connected to the mains; an isolator, electrically connected to the power regulator; a low-frequency voltage stabilizer, electrically connected to the isolator, and the low-frequency voltage stabilizer is electrically connected to the control board; a damping selector electrically connected to the low-frequency voltage regulator, wherein the damping selector is electrically connected to the control board; an inverter bridge electrically connected to the damping selector, and the inverter bridge electrically connected to the control board; A transformer separator is electrically connected to the inverter bridge, and the transformer separator is electrically connected to the control board.

2. The high-frequency, high-pressure, low-temperature plasma energy platform according to claim 1, characterized in that: The control board includes a monostable; The low-frequency voltage stabilizer includes a primary voltage stabilizer and a secondary voltage stabilizer; The output end of the isolator is electrically connected to the input end of the primary regulator; The output end of the isolator is electrically connected to the input end of the secondary regulator; The monostable is electrically connected to the input terminal of the primary regulator; The monostable is electrically connected to the input end of the secondary regulator.

3. The high-frequency, high-pressure, low-temperature plasma energy platform according to claim 2, characterized in that: The primary voltage regulator and the secondary voltage regulator have the same structure; The primary voltage regulator includes a first inductor, a second inductor, a third inductor, a first N-type IGBT and a second N-type IGBT; The output end of the isolator is electrically connected to one end of the first inductor; The other end of the first inductor is electrically connected to the drain of the first N-type IGBT; The source of the first N-type IGBT is electrically connected to the first end of the third inductor; The second end of the third inductor is electrically connected to the damping selector; The second inductor is electrically connected to a connection link between the source of the first N-type IGBT and the third inductor; The drain of the second N-type IGBT is electrically connected to the source of the first N-type IGBT; A source of the second N-type IGBT is grounded.

4. The high-frequency, high-pressure, low-temperature plasma energy platform according to claim 3, characterized in that: The monostable includes a primary latch and a secondary latch; The primary latch is electrically connected to the primary voltage regulator; The secondary latch is electrically connected to the secondary voltage regulator; The first-level latch and the second-level latch have the same structure.

5. The high-frequency, high-pressure, low-temperature plasma energy platform according to claim 4, characterized in that: The first-level latch includes a NOT gate, an NPN MOS tube, a flash diode, a photosensitive varistor, an electronic varistor, a latching NPN IGBT and a latching PNP IGBT; The first output terminal of the primary voltage regulator is electrically connected to the input terminal of the NOT gate; The output end of the NOT gate is electrically connected to the gate of the NPN MOS transistor; The drain of the NPN MOS tube is electrically connected to the weak power supply of the power supply; The source electrode of the NPN MOS tube is electrically connected to the anode electrode of the flash diode; The cathode of the flash diode is grounded; The flash diode is attached to the outer peripheral surface of the photosensitive varistor; The weak power supply of the power supply device is electrically connected to one end of the photosensitive varistor; The other end of the photosensitive varistor is electrically connected to the signal end of the electronic resistor; The first output terminal of the electronic resistor is electrically connected to the gate of the latch NPN type IGBT; The second output terminal of the electronic resistor is electrically connected to the gate of the latch PNP type IGBT; The weak power supply of the power supply is electrically connected to the drain of the latch NPN type IGBT; The source of the latch NPN IGBT is electrically connected to the first receiving end of the energy output board of the primary regulator; The source of the latch NPN IGBT is electrically connected to the drain of the latch PNP IGBT; The source of the latch PNP-type IGBT is electrically connected to the second receiving end of the energy output board of the primary regulator.

6. The high-frequency, high-pressure, low-temperature plasma energy platform according to claim 5, characterized in that: The control board also includes a first multivibrator; The damping selector includes a first electrical damper and a second electrical damper; The first electrical damper is electrically connected to the primary voltage regulator; The second electrical damper is electrically connected to the secondary voltage regulator; The first electrical damper includes a bypass switch, a third N-type IGBT, a fourth N-type IGBT and a fourth inductor; The drain of the third N-type IGBT is electrically connected to the second end of the third inductor; The drain of the fourth N-type IGBT is electrically connected to the source of the third N-type IGBT; The fourth inductor is electrically connected to a connection link between the drain of the fourth N-type IGBT and the source of the third N-type IGBT; The source of the fourth N-type IGBT is electrically connected to the inverter bridge; The gate of the third N-type IGBT is electrically connected to the first multivibrator; The gate of the fourth N-type IGBT is electrically connected to the first multivibrator; The bypass switch is electrically connected to a connection link between the drain of the third N-type IGBT and the source of the fourth N-type IGBT.

7. The high-frequency, high-pressure, low-temperature plasma energy platform according to claim 6, characterized in that: The second electrical damper includes a fifth N-type IGBT, a sixth N-type IGBT and a fifth inductor; The drain of the fifth N-type IGBT is electrically connected to the secondary voltage regulator; The drain of the sixth N-type IGBT is electrically connected to the source of the fifth N-type IGBT; The fifth inductor is electrically connected to a connection link between the drain of the sixth N-type IGBT and the source of the fifth N-type IGBT; The source of the sixth N-type IGBT is electrically connected to the inverter bridge; The gate of the fifth N-type IGBT is electrically connected to the first multivibrator; A gate of the sixth N-type IGBT is electrically connected to the first multivibrator.

8. The high-frequency, high-pressure, low-temperature plasma energy platform according to claim 7, characterized in that: The control board also includes a second multivibrator; The inverter bridge includes a first P-type IGBT, a second P-type IGBT, a third P-type IGBT and a fourth P-type IGBT; The drain of the first P-type IGBT is electrically connected to the source of the fourth N-type IGBT; The drain of the second P-type IGBT is electrically connected to the source of the fourth N-type IGBT; The source of the first P-type IGBT is electrically connected to the drain of the third P-type IGBT; The source of the second P-type IGBT is electrically connected to the drain of the fourth P-type IGBT; The source of the third P-type IGBT is grounded; The source of the fourth P-type IGBT is grounded; The gate of the first P-type IGBT is electrically connected to the second multivibrator; The gate of the second P-type IGBT is electrically connected to the second multivibrator; The gate of the third P-type IGBT is electrically connected to the second multivibrator; A gate of the fourth P-type IGBT is electrically connected to the second multivibrator.

9. The high-frequency, high-pressure, low-temperature plasma energy platform according to claim 8, characterized in that: The transformer separator includes a primary coil, a first secondary coil, a second secondary coil and a third secondary coil; The first end of the primary coil is electrically connected to the source of the first P-type IGBT; The second end of the primary coil is electrically connected to the source of the second P-type IGBT; One or more of the first secondary coil, the second secondary coil and the third secondary coil is an output end of a high-frequency, high-pressure, low-temperature plasma energy platform.

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