An etching method and semiconductor processing apparatus

By forming a sacrificial layer covering the protrusions of the metal material layer and the top of the mask layer during the etching process, the problem of severe horizontal pushing at the top of the metal material layer is solved, the stability of the mesh and the etching accuracy are improved, and a smooth transition between the metal material layer and the mask layer is ensured.

CN120769574BActive Publication Date: 2026-06-02BEIJING INTEGRATED CIRCUIT EQUIPMENT INNOVATION CENTER CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
BEIJING INTEGRATED CIRCUIT EQUIPMENT INNOVATION CENTER CO LTD
Filing Date
2025-06-19
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

In the existing technology, the top of the metal material layer is severely pushed horizontally during the mesh formation process, which makes it impossible for the metal material layer to transition smoothly with the upper mask layer, resulting in the mesh being prone to breakage or peeling.

Method used

An etching method is employed, comprising a first over-etching step and a deposition step, to form first and second sacrificial layers to cover the protrusions of the metal material layer and the top of the mask layer, preventing excessive lateral pushing of the top of the metal material layer and protecting the thickness of the mask layer during subsequent etching processes to ensure a smooth transition.

Benefits of technology

By adding a sacrificial layer to protect the mesh, prevent mesh breakage or peeling, improve mesh stability and etching process accuracy, expand the process window, and ensure a smooth connection between the metal material layer and the mask layer.

✦ Generated by Eureka AI based on patent content.

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Abstract

This invention provides an etching method and semiconductor process equipment, relating to the field of semiconductor technology. It addresses the problem of excessive horizontal pushing of the top of the metal material layer during the mesh formation process using related etching methods, which prevents a smooth transition between the metal material layer and the upper mask layer. The etching method includes providing a semiconductor device comprising a mask layer, a metal material layer, a metal compound material layer, a dielectric layer, and a substrate layer stacked sequentially; a first etching step to pattern the mask layer, forming recesses in areas where the metal material layer does not cover the mask layer and protrusions in areas where the metal material layer covers the mask layer; a deposition step to form a first sacrificial layer in the recesses, laterally covering the protrusions; and a second sacrificial layer on top of the mask layer. This invention prevents excessive horizontal pushing of the top of the metal material layer, ensuring a smooth transition at the junction of the metal material layer and the mask layer.
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