Preparation method of SCM-52 molecular sieve precursor, SCM-52 molecular sieve precursor and application of SCM-52 molecular sieve precursor

Abstract

The invention relates to a preparation method of an SCM-52 molecular sieve precursor, the SCM-52 molecular sieve precursor and application of the SCM-52 molecular sieve precursor. The SCM-52 molecular sieve precursor provided by the invention comprises silicon dioxide, aluminum oxide, an organic structure-directing agent and a silanization reagent, wherein the organic structure-directing agent comprises a compound as shown in a formula I (all groups are defined in the specification). The SCM-52 molecular sieve precursor provided by the invention has a novel skeleton structure and / or chemical composition, and has very important application value.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of molecular sieve, in particular to a preparation method of SCM-52 molecular sieve precursor, SCM-52 molecular sieve precursor and application thereof. BACKGROUND

[0002] Molecular sieve is a crystalline silicate with uniform pore structure, and its space network structure is formed by the staggered arrangement of silicon oxygen tetrahedral units [SiO4] and aluminum oxygen tetrahedral units [AlO4]. A large amount of crystal water is contained in the molecular sieve structure, and a plurality of cavities of different sizes are formed in the process of heating due to the loss of crystal water. The cavities are connected by a plurality of micropores with the same diameter, forming uniform pores with a diameter of molecular size. Therefore, molecules with a diameter larger than the pore size can be excluded, thereby realizing the function of sieving molecules, and the molecular sieve is named accordingly. This structural feature enables the molecular sieve to have three major characteristics of selective adsorption, catalysis and ion exchange. Therefore, it is widely used in petroleum, chemical, metallurgical and other industries.

[0003] The specific structure of the molecular sieve material is determined by X-ray diffraction spectrum (XRD). The position, relative intensity and width of the peaks in the X-ray diffraction spectrum (XRD) are related to the chemical composition, grain size and shape of the material. The X-ray powder diffraction patterns of different samples may be slightly different due to the influence of unit cell parameter changes. Different zeolite molecular sieves have different XRD spectrum characteristics. At the same time, molecular sieves with the same topological structure generally have the same XRD spectrum characteristics, but the framework elements are different, which are also different molecular sieves. Typical ions, zeolite molecular sieves ZSM-5 and TS-1 with the same CHA topological structure, have the same XRD spectrum characteristics, but the framework elements are different, and they are two different molecular sieve materials. The framework composition elements of ZSM-5 molecular sieve material are Si and Al, which are mainly applied in the field of acid catalysis, while the framework composition elements of TS-1 molecular sieve material are Si and Ti, which are mainly applied in the catalytic oxidation process.

[0004] Since different pore structures and element compositions determine the unique physicochemical and catalytic properties of molecular sieves, the development of molecular sieves with special structures is particularly important. SUMMARY

[0005] The present application provides a new molecular sieve precursor SCM-52, which is a germanium-free and high-silicon molecular sieve precursor material, and has very important application value.

[0006] In a first aspect, the SCM-52 molecular sieve precursor provided by the present application comprises silicon dioxide, aluminum trioxide, an organic structure directing agent OSDA and a silylation reagent SIL, wherein the organic structure directing agent comprises a compound shown in formula I,

[0007]

[0008] In Formula I, R1, R2, R3, and R4 are the same or different, each independently selected from C 1-8 alkyl, X - is selected from OH - , a halide anion, nitrate, or a monovalent organic acid anion, R5 and R6 are the same or different, each independently selected from hydrogen, halogen, C 1-4 alkyl.

[0009] In some embodiments, in Formula I, R1, R2, R3, and R4 are the same or different, each independently selected from C 1-4 alkyl, such as methyl, ethyl, or propyl. In some embodiments, in Formula I, R1 and R3 are the same, and R2 and R4 are the same.

[0010] In some embodiments, X - is selected from OH - , bromide, chloride, iodide, nitrate, or acetate.

[0011] In some embodiments, R5 and R6 are the same or different, each independently selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, or propyl.

[0012] In some embodiments, at least one of R5 and R6 is hydrogen. In some embodiments, R5 and R6 are both hydrogen.

[0013] In some embodiments, the organic structure directing agent is selected from one or more of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindolium hydroxide, 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindolium bromide, and 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindolium chloride.

[0014] In some embodiments, the silylating agent comprises a compound of Formula II

[0015]

[0016] In Formula II, R7, R8, R9, and R 10 are the same or different, each independently selected from hydrogen, halogen, C 1-6 alkyl, C 1-6 alkoxy.

[0017] In some embodiments, R7, R8, R9, and R 10the same or different, each independently selected from the group consisting of hydrogen, fluorine, chlorine, bromine, methyl, ethyl, propyl, methoxy, ethoxy, propoxy.

[0018] In some embodiments, R7, R8, R9, and R 10 the same, each selected from the group consisting of C 1-4 alkoxy.

[0019] In some embodiments, the silylating agent is selected from one or more of tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraisopropoxysilane, monomethylchlorosilane, dimethylchlorosilane, monomethylmethoxysilane, dimethylmethoxysilane, monomethylethoxysilane, and dimethylethoxysilane.

[0020] In some embodiments, the SCM-52 molecular sieve precursor has a molar ratio of silica to alumina (i.e., silica-to-alumina ratio) of 10-500, such as 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 105, 110, 115, 120, 125, 130, 135, 140, 145, 150, 155, 160, 165, 170, 175, 180, 185, 190, 195, 200, 205, 210, 215, 220, 225, 230, 235, 240, 245, 250, 255, 260, 265, 270, 275, 280, 285, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, 410, 420, 430, 440, 450, 460, 470, 480, 490, or any value therebetween. In some embodiments, the molar ratio of silica to alumina is 20-200.

[0021] In some embodiments, the molar ratio of silica to OSDA in the SCM-52 molecular sieve precursor is 5-40. In some embodiments, the molar ratio of silica to OSDA in the SCM-52 molecular sieve precursor is 5, 6, 7, 8, 9, 10, 10.5, 11, 11.5, 12, 12.5, 13, 13.5, 14, 14.5, 15, 15.5, 16, 16.5, 17, 17.5, 18, 18.5, 19, 19.5, 20, 20.5, 21, 21.5, 22, 22.5, 23, 23.5, 24, 24.5, 25, 25.5, 26, 26.5, 27, 27.5, 28, 28.5, 29, 29.5, 30, 30.5, 31, 31.5, 32, 32.5, 33, 33.5, 34, 34.5, 35, 35.5, 36, 36.5, 37, 37.5, 38, 38.5, 39, 39.5, or any value therebetween. In some embodiments, the molar ratio of silica to OSDA is 20-40.

[0022] In some embodiments, the molar ratio of silica to silanizing agent in the SCM-52 molecular sieve precursor is 200-800. In some embodiments, the molar ratio of silica to silanizing agent in the SCM-52 molecular sieve precursor is 205, 210, 215, 220, 225, 230, 235, 240, 245, 250, 255, 260, 265, 270, 275, 280, 285, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, 410, 420, 430, 440, 450, 460, 470, 480, 490, 500, 510, 520, 530, 540, 550, 560, 570, 580, 590, 600, 610, 620, 630, 640, 650, 660, 670, 680, 690, 700, 710, 720, 730, 740, 750, 760, 770, 780, 790, or any value therebetween. In some embodiments, the molar ratio of silica to silanizing agent SIL is 300-600.

[0023] In some embodiments, the SCM-52 molecular sieve precursor has a chemical composition of mSi02· nAl203· qOSDA · ySIL, where 10 < m / n < 500, 5 < m / q < 40, 200 < m / y < 800.

[0024] In some embodiments, m / n is 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 105, 110, 115, 120, 125, 130, 135, 140, 145, 150, 155, 160, 165, 170, 175, 180, 185, 190, 195, 200, 205, 210, 215, 220, 225, 230, 235, 240, 245, 250, 255, 260, 265, 270, 275, 280, 285, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, 410, 420, 430, 440, 450, 460, 470, 480, 490, or any value therebetween. In some embodiments, 20 < m / n < 200.

[0025] In some embodiments, m / q is 5, 6, 7, 8, 9, 10, 10.5, 11, 11.5, 12, 12.5, 13, 13.5, 14, 14.5, 15, 15.5, 16, 16.5, 17, 17.5, 18, 18.5, 19, 19.5, 20, 20.5, 21, 21.5, 22, 22.5, 23, 23.5, 24, 24.5, 25, 25.5, 26, 26.5, 27, 27.5, 28, 28.5, 29, 29.5, 30, 30.5, 31, 31.5, 32, 32.5, 33, 33.5, 34, 34.5, 35, 35.5, 36, 36.5, 37, 37.5, 38, 38.5, 39, 39.5, or any value therebetween. In some embodiments, 20 < m / q < 40.

[0026] In some embodiments, m / y is 205, 210, 215, 220, 225, 230, 235, 240, 245, 250, 255, 260, 265, 270, 275, 280, 285, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, 410, 420, 430, 440, 450, 460, 470, 480, 490, 500, 510, 520, 530, 540, 550, 560, 570, 580, 590, 600, 610, 620, 630, 640, 650, 660, 670, 680, 690, 700, 710, 720, 730, 740, 750, 760, 770, 780, 790, or any value therebetween. In some embodiments, 300 < m / y < 600.

[0027] In some embodiments, in the schematic chemical composition shown as "mSi02-nAl203-qOSDA", the molar ratio of the water to the silicon source is 8-100, preferably 15-100, more preferably 15-50.

[0028] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor includes one or more of diffraction peaks at 2-theta of 3.985°±0.30°, 8.306°±0.30°, 12.081°±0.30°, and 25.921°±0.50°.

[0029] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor includes a diffraction peak at 2-theta of 3.985°±0.03°, 3.985°±0.05°, 3.985°±0.07°, 3.985°±0.1°, 3.985°±0.13°, 3.985°±0.15°, 3.985°±0.17°, 3.985°±0.2°, 3.985°±0.23°, 3.985°±0.25°, or 3.985°±0.27°.

[0030] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor includes a diffraction peak at 2-theta of 8.306°±0.03°, 8.306°±0.05°, 8.306°±0.07°, 8.306°±0.1°, 8.306°±0.13°, 8.306°±0.15°, 8.306°±0.17°, 8.306°±0.2°, 8.306°±0.23°, 8.306°±0.25°, or 8.306°±0.27°.

[0031] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor includes a diffraction peak at 2-theta of 12.081°±0.03°, 12.081°±0.05°, 12.081°±0.07°, 12.081°±0.1°, 12.081°±0.13°, 12.081°±0.15°, 12.081°±0.17°, 12.081°±0.2°, 12.081°±0.23°, 12.081°±0.25°, or 12.081°±0.27°.

[0032] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising a diffraction peak at 2-theta = 25.921° ± 0.03°, 25.921° ± 0.05°, 25.921° ± 0.07°, 25.921° ± 0.1°, 25.921° ± 0.13°, 25.921° ± 0.15°, 25.921° ± 0.17°, 25.921° ± 0.2°, 25.921° ± 0.23°, 25.921° ± 0.25°, 25.921° ± 0.27°, 25.921° ± 0.3°, 25.921° ± 0.33°, 25.921° ± 0.35°, 25.921° ± 0.37°, 25.921° ± 0.4°, 25.921° ± 0.43°, 25.921° ± 0.45°, or 25.921° ± 0.47°.

[0033] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising a diffraction peak at 2-theta = 3.985° ± 0.30° as the most intense peak.

[0034] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising one or more of diffraction peaks at 2-theta = 13.941° ± 0.30°, 17.88° ± 0.50°, 22.146° ± 0.50°, and 24.225° ± 0.30°.

[0035] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising a diffraction peak at 2-theta = 13.941° ± 0.03°, 13.941° ± 0.05°, 13.941° ± 0.07°, 13.941° ± 0.1°, 13.941° ± 0.13°, 13.941° ± 0.15°, 13.941° ± 0.17°, 13.941° ± 0.2°, 13.941° ± 0.23°, 13.941° ± 0.25°, or 13.941° ± 0.27°.

[0036] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor further comprises a diffraction peak at 2-theta = 17.88° ± 0.03°, 17.88° ± 0.05°, 17.88° ± 0.07°, 17.88° ± 0.1°, 17.88° ± 0.13°, 17.88° ± 0.15°, 17.88° ± 0.17°, 17.88° ± 0.2°, 17.88° ± 0.23°, 17.88° ± 0.25°, 17.88° ± 0.27°, 17.88° ± 0.3°, 17.88° ± 0.33°, 17.88° ± 0.35°, 17.88° ± 0.37°, 17.88° ± 0.4°, 17.88° ± 0.43°, 17.88° ± 0.45°, or 17.88° ± 0.47°.

[0037] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor further comprises a diffraction peak at 2-theta = 22.146° ± 0.03°, 22.146° ± 0.05°, 22.146° ± 0.07°, 22.146° ± 0.1°, 22.146° ± 0.13°, 22.146° ± 0.15°, 22.146° ± 0.17°, 22.146° ± 0.2°, 22.146° ± 0.23°, 22.146° ± 0.25°, 22.146° ± 0.27°, 22.146° ± 0.3°, 22.146° ± 0.33°, 22.146° ± 0.35°, 22.146° ± 0.37°, 22.146° ± 0.4°, 22.146° ± 0.43°, 22.146° ± 0.45°, or 22.146° ± 0.47°.

[0038] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor further comprises a diffraction peak at 2-theta = 24.225° ± 0.03°, 24.225° ± 0.05°, 24.225° ± 0.07°, 24.225° ± 0.1°, 24.225° ± 0.13°, 24.225° ± 0.15°, 24.225° ± 0.17°, 24.225° ± 0.2°, 24.225° ± 0.23°, 24.225° ± 0.25°, or 24.225° ± 0.27°.

[0039] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor comprises the diffraction peaks set forth in Table A:

[0040] Table A

[0041] 2 theta Relative intensity (I / I0 x 100) 3.985°±0.30° vs 8.306°±0.30° m-s 12.081°±0.30° m-s 25.921°±0.50° s-vs .

[0042] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising the diffraction peaks of Table A-1:

[0043] Table A-1

[0044]

[0045]

[0046] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising the diffraction peaks of Table B:

[0047] Table B

[0048] 2 theta Relative intensity (I / I0 x 100) 3.985°±0.30° vs 8.306°±0.30° m-s 12.081°±0.30° m-s 13.941°±0.30° w-m 17.88°±0.50° w-m 22.146°±0.50° w-m 24.225°±0.30° w-m 25.921°±0.50° s-vs .

[0049] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising the diffraction peaks of Table B-1:

[0050] Table B-1

[0051] 2 theta Relative intensity (I / I0 x 100) 3.985°±0.30° 100 8.306°±0.30° 20-45 12.081°±0.30° 20-40 13.941°±0.30° 10-30 17.88°±0.50° 10-25 22.146°±0.50° 10-25 24.225°±0.30° 10-30 25.921°±0.50° 50-70 .

[0052] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising the diffraction peaks of Table C:

[0053] Table C

[0054]

[0055] wherein b: varies with 2-theta.

[0056] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising the diffraction peaks of Table C-1:

[0057] Table C-1

[0058]

[0059] wherein b: varies with 2-theta.

[0060] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising the diffraction peaks of Table D:

[0061] Table D

[0062]

[0063] wherein b: varies with 2-theta.

[0064] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising the diffraction peaks shown in Table D-1:

[0065] Table D-1

[0066]

[0067] wherein b: varies with 2Q.

[0068] In some embodiments, the crystals of the SCM-52 molecular sieve precursor have a nanosheet morphology. In some embodiments, the crystals have an average thickness of less than or equal to 30 nm.

[0069] In some embodiments, the crystals have an average thickness of 2 nm to 27 nm, for example, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, or any value therebetween. In some embodiments, the crystals have an average thickness of 5 nm to 25 nm.

[0070] In some embodiments, the SCM-52 molecular sieve precursor comprises silicon, aluminum, oxygen, and nitrogen.

[0071] In some embodiments, the SCM-52 molecular sieve precursor further comprises a non-silicon and non-aluminum element, preferably the non-silicon and non-aluminum element is selected from one or more of sodium, potassium, germanium, titanium, boron, zirconium, tin, and iron.

[0072] In some embodiments, the SCM-52 molecular sieve precursor further comprises one or more of sodium, potassium, germanium, titanium, boron, zirconium, tin, and iron.

[0073] In a second aspect, the present application provides an SCM-52 molecular sieve precursor having an X-ray diffraction pattern comprising one or more of diffraction peaks at 2Q of 3.985° ± 0.30°, 8.306° ± 0.30°, 12.081° ± 0.30°, and 25.921° ± 0.50°.

[0074] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor includes a diffraction peak at 2-theta of 3.985°±0.03°, 3.985°±0.05°, 3.985°±0.07°, 3.985°±0.1°, 3.985°±0.13°, 3.985°±0.15°, 3.985°±0.17°, 3.985°±0.2°, 3.985°±0.23°, 3.985°±0.25°, or 3.985°±0.27°.

[0075] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor includes a diffraction peak at 2-theta of 8.306°±0.03°, 8.306°±0.05°, 8.306°±0.07°, 8.306°±0.1°, 8.306°±0.13°, 8.306°±0.15°, 8.306°±0.17°, 8.306°±0.2°, 8.306°±0.23°, 8.306°±0.25°, or 8.306°±0.27°.

[0076] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor includes a diffraction peak at 2-theta of 12.081°±0.03°, 12.081°±0.05°, 12.081°±0.07°, 12.081°±0.1°, 12.081°±0.13°, 12.081°±0.15°, 12.081°±0.17°, 12.081°±0.2°, 12.081°±0.23°, 12.081°±0.25°, or 12.081°±0.27°.

[0077] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor includes a diffraction peak at 2-theta of 25.921°±0.03°, 25.921°±0.05°, 25.921°±0.07°, 25.921°±0.1°, 25.921°±0.13°, 25.921°±0.15°, 25.921°±0.17°, 25.921°±0.2°, 25.921°±0.23°, 25.921°±0.25°, 25.921°±0.27°, 25.921°±0.3°, 25.921°±0.33°, 25.921°±0.35°, 25.921°±0.37°, 25.921°±0.4°, 25.921°±0.43°, 25.921°±0.45°, or 25.921°±0.47°.

[0078] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising a diffraction peak at 2-theta = 3.985° ± 0.30°.

[0079] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern further comprising one or more of diffraction peaks at 2-theta = 13.941° ± 0.30°, 17.88° ± 0.50°, 22.146° ± 0.50°, and 24.225° ± 0.30°.

[0080] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern further comprising a diffraction peak at 2-theta = 13.941° ± 0.03°, 13.941° ± 0.05°, 13.941° ± 0.07°, 13.941° ± 0.1°, 13.941° ± 0.13°, 13.941° ± 0.15°, 13.941° ± 0.17°, 13.941° ± 0.2°, 13.941° ± 0.23°, 13.941° ± 0.25°, or 13.941° ± 0.27°.

[0081] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern further comprising a diffraction peak at 2-theta = 17.88° ± 0.03°, 17.88° ± 0.05°, 17.88° ± 0.07°, 17.88° ± 0.1°, 17.88° ± 0.13°, 17.88° ± 0.15°, 17.88° ± 0.17°, 17.88° ± 0.2°, 17.88° ± 0.23°, 17.88° ± 0.25°, 17.88° ± 0.27°, 17.88° ± 0.3°, 17.88° ± 0.33°, 17.88° ± 0.35°, 17.88° ± 0.37°, 17.88° ± 0.4°, 17.88° ± 0.43°, 17.88° ± 0.45°, or 17.88° ± 0.47°.

[0082] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor further comprises a diffraction peak at 2-theta = 22.146° ± 0.03°, 22.146° ± 0.05°, 22.146° ± 0.07°, 22.146° ± 0.1°, 22.146° ± 0.13°, 22.146° ± 0.15°, 22.146° ± 0.17°, 22.146° ± 0.2°, 22.146° ± 0.23°, 22.146° ± 0.25°, 22.146° ± 0.27°, 22.146° ± 0.3°, 22.146° ± 0.33°, 22.146° ± 0.35°, 22.146° ± 0.37°, 22.146° ± 0.4°, 22.146° ± 0.43°, 22.146° ± 0.45°, or 22.146° ± 0.47°.

[0083] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor further comprises a diffraction peak at 2-theta = 24.225° ± 0.03°, 24.225° ± 0.05°, 24.225° ± 0.07°, 24.225° ± 0.1°, 24.225° ± 0.13°, 24.225° ± 0.15°, 24.225° ± 0.17°, 24.225° ± 0.2°, 24.225° ± 0.23°, 24.225° ± 0.25°, or 24.225° ± 0.27°.

[0084] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor comprises the diffraction peaks set forth in Table A:

[0085] Table A

[0086] 2 theta Relative intensity (I / I0 x 100) 3.985°±0.30° vs 8.306°±0.30° m-s 12.081°±0.30° m-s 25.921°±0.50° s-vs .

[0087] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor comprises the diffraction peaks set forth in Table A-1:

[0088] Table A-1

[0089] 2 theta Relative intensity (I / I0 x 100) 3.985°±0.30° 100 8.306°±0.30° 20-45 12.081°±0.30° 20-40 25.921°±0.50° 50-70 .

[0090] In some embodiments, the X-ray diffraction pattern of the SCM-52 molecular sieve precursor comprises the diffraction peaks set forth in Table B:

[0091] Table B

[0092]

[0093]

[0094] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising the diffraction peaks shown in Table B-1 :

[0095] Table B-1

[0096] 2 theta Relative intensity (I / I0 x 100) 3.985°±0.30° 100 8.306°±0.30° 20-45 12.081°±0.30° 20-40 13.941°±0.30° 10-30 17.88°±0.50° 10-25 22.146°±0.50° 10-25 24.225°±0.30° 10-30 25.921°±0.50° 50-70 .

[0097] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising the diffraction peaks shown in Table C:

[0098] Table C

[0099]

[0100] wherein b: varies with 2-theta.

[0101] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising the diffraction peaks shown in Table C-1 :

[0102] Table C-1

[0103]

[0104] wherein b: varies with 2-theta.

[0105] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising the diffraction peaks shown in Table D:

[0106] Table D

[0107]

[0108]

[0109] wherein b: varies with 2-theta.

[0110] In some embodiments, the SCM-52 molecular sieve precursor has an X-ray diffraction pattern comprising the diffraction peaks shown in Table D-1 :

[0111] Table D-1

[0112]

[0113] wherein b: varies with 2-theta.

[0114] In some embodiments, the SCM-52 molecular sieve precursor comprises silicon, aluminum, oxygen, and nitrogen.

[0115] In some embodiments, the SCM-52 molecular sieve precursor comprises silica, alumina, an organic structure directing agent, and a silylating agent, the organic structure directing agent comprising a compound of Formula I,

[0116]

[0117] In Formula I, R1, R2, R3, and R4 are the same or different, each independently selected from C 1-8 alkyl, X - is selected from OH - , a halide anion, nitrate, or a monovalent organic acid anion, R5 and R6 are the same or different, each independently selected from hydrogen, halogen, C 1-4 alkyl.

[0118] In some embodiments, in Formula I, R1, R2, R3, and R4 are the same or different, each independently selected from C 1-4 alkyl, such as methyl, ethyl, or propyl. In some embodiments, in Formula I, R1 and R3 are the same, and R2 and R4 are the same.

[0119] In some embodiments, X - is selected from OH - , bromide, chloride, iodide, nitrate, or acetate.

[0120] In some embodiments, R5 and R6 are the same or different, each independently selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, or propyl.

[0121] In some embodiments, at least one of R5 and R6 is hydrogen. In some embodiments, R5 and R6 are both hydrogen.

[0122] In some embodiments, the organic structure directing agent is selected from one or more of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindolium hydroxide, 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindolium bromide, and 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindolium chloride.

[0123] In some embodiments, the silylating agent comprises a compound of Formula II

[0124]

[0125] In Formula II, R7, R8, R9, and R 10 are the same or different, each independently selected from hydrogen, halogen, C 1-6 alkyl, C 1-6 alkoxy.

[0126] In some embodiments, R7, R8, R9 and R 10 The same or different, each independently selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, propyl, methoxy, ethoxy, propoxy.

[0127] In some embodiments, R7, R8, R9 and R 10 Same, all selected from C 1-4 Alkoxy.

[0128] In some embodiments, the silanization agent is selected from one or more of tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraisopropoxysilane, monomethylchlorosilane, dimethylchlorosilane, monomethylmethoxysilane, dimethylmethoxysilane, monomethylethoxysilane and dimethylethoxysilane.

[0129] In some embodiments, the molar ratio of silicon dioxide to aluminum oxide (i.e., silicon-aluminum ratio) in the SCM-52 molecular sieve precursor is 10-500, for example, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 105, 110, 115, 120, 125, 130, 135, 140, 145, 150, 155, 160, 165, 170, 175, 180, 185, 190, 200, 210, 215, 220, 225, 230, 235, 240, 250, 260, 270, 275, 280, 285, 290, 300, 310, 315, 320, 330, 335, 340, 350, 360, 370, 380, 390, 400, 410, 420, 430, 440, 450, 460, 470, 480, 490, 500, 510, 510, 520, 530, 530 480, 490, or any value therebetween. In some embodiments, the molar ratio of silica to alumina is from 20 to 200.

[0130] In some embodiments, the molar ratio of silica to OSDA in the SCM-52 molecular sieve precursor is 5-40. In some embodiments, the molar ratio of silica to OSDA in the SCM-52 molecular sieve precursor is 5, 6, 7, 8, 9, 10, 10.5, 11, 11.5, 12, 12.5, 13, 13.5, 14, 14.5, 15, 15.5, 16, 16.5, 17, 17.5, 18, 18.5, 19, 19.5, 20, 20.5, 21, 21.5, 22, 22.5, 23, 23.5, 24, 24.5, 25, 25.5, 26, 26.5, 27, 27.5, 28, 28.5, 29, 29.5, 30, 30.5, 31, 31.5, 32, 32.5, 33, 33.5, 34, 34.5, 35, 35.5, 36, 36.5, 37, 37.5, 38, 38.5, 39, 39.5, or any value therebetween. In some embodiments, the molar ratio of silica to OSDA is 20-40.

[0131] In some embodiments, the molar ratio of silica to silanizing agent in the SCM-52 molecular sieve precursor is 200-800. In some embodiments, the molar ratio of silica to silanizing agent SIL in the SCM-52 molecular sieve precursor is 205, 210, 215, 220, 225, 230, 235, 240, 245, 250, 255, 260, 265, 270, 275, 280, 285, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, 410, 420, 430, 440, 450, 460, 470, 480, 490, 500, 510, 520, 530, 540, 550, 560, 570, 580, 590, 600, 610, 620, 630, 640, 650, 660, 670, 680, 690, 700, 710, 720, 730, 740, 750, 760, 770, 780, 790, or any value therebetween. In some embodiments, the molar ratio of silica to silanizing agent SIL is 300-600.

[0132] In some embodiments, the SCM-52 molecular sieve precursor has a chemical composition of mSi02· nAl203· qOSDA · ySIL, where OSDA represents the organic structure directing agent, SIL represents the silanizing agent, 10 < m / n < 500, 5 < m / q < 40, 200 < m / y < 800.

[0133] In some embodiments, m / n is 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 105, 110, 115, 120, 125, 130, 135, 140, 145, 150, 155, 160, 165, 170, 175, 180, 185, 190, 195, 200, 205 , 210, 215, 220, 225, 230, 235, 240, 245, 250, 255, 260, 265, 270, 275, 280, 285, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, 410, 420, 430, 440, 450, 460, 470, 480, 490 or any value therebetween. In some embodiments, 20≤m / n≤200.

[0134] In some embodiments, m / q is 5, 6, 7, 8, 9, 10, 10.5, 11, 11.5, 12, 12.5, 13, 13.5, 14, 14.5, 15, 15.5, 16, 16.5, 17, 17.5, 18, 18.5, 19, 19.5, 20, 20.5, 21, 21.5, 22, 22.5, 23, 23.5, 24. 7.5, 38, 38.5, 39, 39.5, or any value therebetween. In some embodiments, 20≤m / q≤40.

[0135] In some embodiments, m / y is 205, 210, 215, 220, 225, 230, 235, 240, 245, 250, 255, 260, 265, 270, 275, 280, 285, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, 410, 420, 430, 440, 450, 70, 780, 790, or any value therebetween. In some embodiments, 300≤m / y≤600.

[0136] In some embodiments, in the schematic chemical composition shown as "mSiO2·nAl2O3·qOSDA", the molar ratio of the water to the silicon source is 8-100, preferably 15-100, more preferably 15-50.

[0137] In the present invention, OSDA stands for Organic Structure-Directing Agent, and SIL stands for silylation.

[0138] In some embodiments, the crystals of the SCM-52 molecular sieve precursor have a nanosheet morphology. In some embodiments, the average thickness of the crystals is less than or equal to 30 nm.

[0139] In some embodiments, the average thickness of the crystals is 2 nm-27 nm, such as 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, or any value therebetween. In some embodiments, the average thickness of the crystals is 5 nm-25 nm.

[0140] In some embodiments, the SCM-52 molecular sieve precursor further comprises a non-silicon and non-aluminum element, preferably the non-silicon and non-aluminum element is selected from one or more of sodium, potassium, germanium, titanium, boron, zirconium, tin, and iron.

[0141] In some embodiments, the SCM-52 molecular sieve precursor further comprises one or more elements selected from sodium, potassium, germanium, titanium, boron, zirconium, tin, and iron.

[0142] In a third aspect, the present invention provides a method for preparing a SCM-52 molecular sieve precursor, comprising the following steps:

[0143] S1: subjecting a mixture containing a silicon source, an aluminum source, an organic structure-directing agent, and a solvent to a crystallization treatment to obtain a crystallization product;

[0144] S2: subjecting the crystallization product to a hydrothermal treatment after mixing with a silylation agent under acidic conditions; preferably, the organic structure-directing agent comprises a compound shown as Formula I,

[0145]

[0146] In Formula I, R1, R2, R3, and R4 are the same or different, each independently selected from C 1-8 alkyl, X -selected from OH - , a halide anion, nitrate, or a monovalent organic acid anion; R5and R6are the same or different, each independently selected from hydrogen, halogen, C 1-4 alkyl.

[0147] In some embodiments, in Formula I, R1, R2, R3, and R4are the same or different, each independently selected from C 1-4 alkyl, for example, methyl, ethyl, or propyl. In some embodiments, in Formula I, R1and R3are the same, and R2and R4are the same.

[0148] In some embodiments, X - is selected from OH - , bromide, chloride, iodide, nitrate, or acetate.

[0149] In some embodiments, R5and R6are the same or different, each independently selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, or propyl.

[0150] In some embodiments, at least one of R5and R6is hydrogen. In some embodiments, R5and R6are both hydrogen.

[0151] In some embodiments, the organic structure directing agent is selected from one or more of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindolium hydroxide, 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindolium bromide, and 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindolium chloride.

[0152] In some embodiments, the molar ratio of the silicon source, calculated as Si02, to the aluminum source, calculated as Al203, is 1 : (0.0025-0.25), for example 1 :0.003, 1 :0.0035, 1 :0.004, 1 :0.0045, 1 :0.005, 1 :0.0055, 1 :0.006, 1 :0.0065, 1 :0.007, 1 :0.0075, 1 :0.008, 1 :0.0085, 1 :0.009, 1 :0.0095, 1 :0.01, 1 :0.015, 1 :0.02, 1 :0.025, 1 :0.03, 1 :0.035, 1 :0.04, 1 :0.045, 1 :0.05, 1 :0.055, 1 :0.06, 1 :0.065, 1 :0.07, 1 :0.075, 1 :0.08, 1 :0.085, 1 :0.09, 1 :0.095, 1 :0.1, 1 :0.105, 1 :0.12, 1 :0.125, 1 :0.13, 1 :0.135, 1 :0.14, 1 :0.145, 1 :0.15, 1 :0.155, 1 :0.16, 1 :0.165, 1 :0.17, 1 :0.175, 1 :0.18, 1 :0.185, 1 :0.19, 1 :0.195, 1 :0.1, 1 :0.205, 1 :0.22, 1 :0.225, 1 :0.23, 1 :0.235, 1 :0.24, 1 :0.245, or any value therebetween.

[0153] In some embodiments, the molar ratio of the silicon source to the aluminum source is 1 : (0.025-0.2). In some embodiments, the molar ratio of the silicon source to the aluminum source is 1 : (0.0025-0.15).

[0154] In some embodiments, the molar ratio of the silicon source, calculated as Si02, to the organic structure directing agent is 1 : (0.050-0.50), for example 1 :0.05, 1 :0.06, 1 :0.07, 1 :0.08, 1 :0.09, 1 :0.1, 1 :0.1 1, 1 :0.12, 1 :0.13, 1 :0.14, 1 :0.15, 1 :0.17, 1 :0.20, 1 :0.23, 1 :0.25, 1 :0.27, 1 :0.30, 1 :0.33, 1 :0.35, 1 :0.37, 1 :0.40, 1 :0.43, 1 :0.45, 1 :0.47, or any value therebetween.

[0155] In some embodiments, the molar ratio of the silicon source to the organic structure directing agent is 1 : (0.1 -0.50). In some embodiments, the molar ratio of the silicon source to the organic structure directing agent is 1 : (0.30-0.50).

[0156] In some embodiments, the molar ratio of the silicon source to the solvent is 1 : (8-100), for example 1 : 10, 1 : 15, 1 : 20, 1 : 25, 1 : 30, 1 : 35, 1 : 40, 1 : 45, 1 : 50, 1 : 55, 1 : 60, 1 : 65, 1 : 70, 1 : 75, 1 : 80, 1 : 85, 1 : 90, 1 : 95, or any value therebetween, in terms of Si02.

[0157] In some embodiments, the molar ratio of the silicon source to the solvent is 1 : (15-100). In some embodiments, the molar ratio of the silicon source to the solvent is 1 : (15-50).

[0158] In some embodiments, the acidic condition is provided by an acid solution. In some embodiments, the concentration of the acid solution is 0.5 mol / L-6 mol / L, for example 1 mol / L, 1.5 mol / L, 2 mol / L, 2.5 mol / L, 3 mol / L, 3.5 mol / L, 4 mol / L, 4.5 mol / L, 5 mol / L, 5.5 mol / L, or any value therebetween. In some embodiments, the concentration of the acid solution is 1 mol / L-5 mol / L. In some embodiments, the concentration of the acid solution is 1.5 mol / L-4.5 mol / L.

[0159] In some embodiments, the liquid to solid ratio of the acid solution to the crystallization product is (10-100) mL: 1 g, for example 20 mL: 1 g, 30 mL: 1 g, 40 mL: 1 g, 50 mL: 1 g, 60 mL: 1 g, 70 mL: 1 g, 80 mL: 1 g, or 90 mL: 1 g. In some embodiments, the liquid to solid ratio of the acid solution to the crystallization product is (20-80) mL: 1 g. In some embodiments, the liquid to solid ratio of the acid solution to the crystallization product is (40-60) mL: 1 g.

[0160] In some embodiments, the mass ratio of the silylating agent to the crystallization product is (0.1-4): 1, for example 0.2: 1, 0.3: 1, 0.4: 1, 0.5: 1, 0.6: 1, 0.7: 1, 0.8: 1, 0.9: 1, 1.0: 1, 1.1: 1, 1.2: 1, 1.3: 1, 1.4: 1, 1.5: 1, 1.6: 1, 1.7: 1, 1.8: 1, 1.9: 1, 2.0: 1, 2.3: 1, 2.5: 1, 2.7: 1, 3.0: 1, 3.3: 1, 3.5: 1, or 3.7: 1. In some embodiments, the mass ratio of the silylating agent to the crystallization product is (0.2-2): 1. In some embodiments, the mass ratio of the silylating agent to the crystallization product is (0.2-2.5): 1.

[0161] In some embodiments, the acid solution is selected from an aqueous hydrochloric acid solution, an aqueous acetic acid solution, an aqueous nitric acid solution, an ethanolic hydrochloric acid solution, an ethanolic acetic acid solution, or an ethanolic nitric acid solution.

[0162] In some embodiments, the silylating agent comprises a compound of Formula II

[0163]

[0164] In Formula II, R7, R8, R9, and R 10 are each independently selected from hydrogen, halogen, C 1-6 alkyl, C 1-6 alkoxy.

[0165] In some embodiments, R7, R8, R9, and R 10 are each independently selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, propyl, methoxy, ethoxy, propoxy.

[0166] In some embodiments, R7, R8, R9, and R 10 are each independently selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, propyl, methoxy, ethoxy, propoxy. 1-4 alkoxy.

[0167] In some embodiments, the silylating agent is selected from one or more of tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraisopropoxysilane, monomethylchlorosilane, dimethylchlorosilane, monomethylmethoxysilane, dimethylmethoxysilane, monomethylethoxysilane, and dimethylethoxysilane.

[0168] In the present invention, a silylating agent is used to direct structural modification of the pore walls of a molecular sieve precursor under acidic conditions.

[0169] In some embodiments, the silicon source is selected from one or more of a silica sol, a silica gel, tetraethyl orthosilicate, fumed silica, and silicic acid.

[0170] In some embodiments, the aluminum source is selected from one or more of aluminum hydroxide, aluminum isopropoxide, aluminum nitrate, and aluminum oxide.

[0171] In some embodiments, the solvent is selected from water.

[0172] In some embodiments, the mixture is free of alkali or alkaline earth metals.

[0173] According to one embodiment of the present application, in the method for synthesizing the molecular sieve precursor, the mixture does not contain an alkali source from the perspective of being more advantageous for obtaining the SCM-52 molecular sieve precursor of the present application. As the alkali source, for example, an alkaline substance other than the silicon source, the aluminum source, and the organic structure directing agent can be cited, specifically, for example, any alkali source conventionally used in the art for the purpose of making the system alkaline, more specifically, for example, an inorganic base having an alkali metal or an alkaline earth metal as a cation, particularly sodium hydroxide and potassium hydroxide, and the like. Here, by "does not contain an alkali source", it means that the alkali source is not intentionally or actively introduced into the mixture.

[0174] In some embodiments, the mixture is subjected to dynamic crystallization by rotation. In some embodiments, the rotation speed is 10 rpm to 60 rpm, for example, 20 rpm, 30 rpm, or 40 rpm.

[0175] In some embodiments, the mixture is subjected to dynamic crystallization by stirring. In some embodiments, the stirring speed is 30 rpm to 400 rpm, for example, 50 rpm, 100 rpm, 150 rpm, 200 rpm, 250 rpm, 300 rpm, or 350 rpm.

[0176] In some embodiments, the mixture is crystallized at 130°C to 180°C, for example, 135°C, 140°C, 145°C, 150°C, 155°C, 160°C, 165°C, 170°C, or 175°C, for 1 to 12 days, for example, 2 days, 3 days, 4 days, 5 days, 6 days, 7 days, 8 days, 9 days, 10 days, or 11 days. In some embodiments, the mixture is crystallized at 135°C to 175°C for 2 to 11 days. In some embodiments, the mixture is crystallized at 140°C to 170°C for 3 to 10 days.

[0177] In some embodiments, the hydrothermal treatment is at a temperature of 80°C to 190°C, for example, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 170°C, or 180°C.

[0178] In some embodiments, the hydrothermal treatment is performed for a time period of 5 h to 48 h, such as 8 h, 10 h, 12 h, 15 h, 20 h, 24 h, 28 h, 30 h, 32 h, 36 h, 40 h, 44 h or 46 h.

[0179] According to the present application, the various SCM-52 molecular sieve precursors obtained as described above can be used in any physical form, such as a powder, a granule or a molded product (such as a rod, a clover, etc.). These physical forms can be obtained in any manner known in the art and are not particularly limited.

[0180] In a fourth aspect, the present application provides a molecular sieve precursor composition comprising the SCM-52 molecular sieve precursor of the first or second aspect or the SCM-52 molecular sieve precursor prepared by the preparation method of the third aspect, and optionally a binder.

[0181] According to the present application, the SCM-52 molecular sieve precursor can be used in combination with other materials, thereby obtaining a SCM-52 molecular sieve precursor composition. As these other materials, for example, active materials and inactive materials can be mentioned. As the active materials, for example, synthetic zeolites, natural zeolites or other types of molecular sieves, etc. can be mentioned, and as the inactive materials (generally referred to as binders), for example, clays, white clay, silica gel and alumina, etc. can be mentioned. These other materials can be used singly or in combination in any ratio. As the amount of the other materials, the amount conventionally used in the art can be directly referred to and is not particularly limited.

[0182] In a fifth aspect, the present application provides the use of the SCM-52 molecular sieve precursor of the first or second aspect or the SCM-52 molecular sieve precursor prepared by the preparation method of the third aspect or the molecular sieve composition of the fourth aspect as an adsorbent or a catalyst for the conversion of organic compounds or for the preparation of a molecular sieve.

[0183] In some embodiments, the SCM-52 molecular sieve precursor can be used to prepare a molecular sieve, for example, by calcination to prepare a SCM-53 molecular sieve.

[0184] In some embodiments, the SCM-52 molecular sieve precursor or the molecular sieve precursor composition is used to separate at least one component from a mixture of various components in a gas phase or a liquid phase. According to this, the at least one component can be partially or substantially completely separated from the mixture of various components, in particular by contacting the mixture with the SCM-52 molecular sieve precursor or the molecular sieve precursor composition to selectively adsorb this component.

[0185] The SCM-52 molecular sieve precursor involved in the present invention has a new skeleton structure and / or chemical composition and has very important application value. BRIEF DESCRIPTION OF THE DRAWINGS

[0186] Figure 1 is the X-ray diffraction pattern (XRD) of the sample in Example 1;

[0187] Figure 2 This is a scanning electron microscope image (SEM) of the sample in Example 1;

[0188] Figure 3 For the sample in Example 1 27 Al NMR;

[0189] Figure 4 For the sample in Example 1 29 Si NMR;

[0190] Figure 5 is the X-ray diffraction pattern (XRD) of the sample in Example 2;

[0191] Figure 6 This is a scanning electron microscope image (SEM) of the sample in Example 2;

[0192] Figure 7 is the X-ray diffraction pattern (XRD) of the sample in Example 3;

[0193] Figure 8 This is a scanning electron microscope (SEM) image of the sample in Example 3. DETAILED DESCRIPTION

[0194] The specific embodiments of the present invention are described in detail below. However, it should be noted that the protection scope of the present invention is not limited by these specific embodiments, but is determined by the claims in the appendix.

[0195] All publications, patent applications, patents, and other references mentioned in this specification are incorporated herein by reference. Unless otherwise defined, all technical and scientific terms used in this specification have the meanings commonly understood by those skilled in the art. In the event of conflict, the definitions in this specification will prevail.

[0196] When this specification uses the prefix "well known to those skilled in the art", "prior art" or similar terms to introduce materials, substances, methods, steps, devices or components, the objects introduced by the prefix include those commonly used in the art when this application is filed, but also include those that are not commonly used at present but will become generally recognized in the art to be suitable for similar purposes.

[0197] In the context of the present specification, unless explicitly stated otherwise, any matter or item not mentioned is directly applicable as known in the art without any change. Moreover, any embodiment described herein can be freely combined with one or more other embodiments described herein, whereby the resulting technical solution or technical idea is considered to be part of the original disclosure or original teaching of the present application and should not be considered as new matter or new content not disclosed or contemplated herein, unless the combination is considered to be obviously unreasonable by a person skilled in the art.

[0198] In the context of the present specification, in the XRD data of the molecular sieve precursor, w, m, s, vs represent the intensity of the diffraction peak, w is weak, m is moderate, s is strong, and vs is very strong, which is well known to those skilled in the art. Generally, w is less than 20, for example, 5, 7, 10, 11, 12, 13, 14, 15, 16, 17, 18 or 19; m is 20-40, for example, 21, 23, 25, 27, 29, 30, 31, 33, 35, 37 or 39; s is 40-70, for example, 41, 43, 45, 47, 49, 50, 51, 53, 55, 57, 59, 60, 61, 63, 65, 67 or 69; vs is greater than 70, for example, 75, 80, 85, 90, 95 or 100.

[0199] In the context of the present specification, the structure of the molecular sieve precursor is determined by X-ray diffraction pattern (XRD), which is measured by an X-ray powder diffractometer using a Cu-Kα ray source, a nickel filter. Before sample testing, a scanning electron microscope (SEM) is used to observe the crystallization of the molecular sieve precursor sample to confirm that only one crystal is contained in the sample, i.e., the molecular sieve precursor sample is a pure phase, on which basis XRD testing is performed to ensure that there are no interference peaks of other crystals in the diffraction peaks in the XRD pattern.

[0200] In some embodiments, the SCM-50 molecular sieve precursor of the present application has an X-ray diffraction pattern as shown in Figure 1 , Figure 5 or Figure 7 .

[0201] In the context of the present specification, including in the following examples and comparative examples, the model of the X-ray powder diffractometer for analyzing the phase of the molecular sieve precursor is a Panalytical X PER PRO X-ray powder diffractometer, a Cu Kα ray source a nickel filter, a 2θ scanning range of 2°-50°, an operating voltage of 40 KV, a current of 40 mA, and a scanning rate of 10° / min.

[0202] In the context of this specification, including in the following examples and comparative examples, the molecular sieve precursor is observed using a scanning electron microscope (SEM) of type S-4800II field emission scanning electron microscope. The molecular sieve precursor is observed at a magnification of 40,000 times using the scanning electron microscope. An observation field is randomly selected, and the average value of the sum of the thicknesses of all crystals in the observation field is calculated. This operation is repeated 10 times. The average value of the sum of the 10 values ​​is used as the crystal thickness, and the size of all agglomerates in the observation field is measured using the same method.

[0203] In the context of this specification, including the following examples and comparative examples, the molecular sieve precursor is analyzed using an inductively coupled plasma atomic emission spectrometer (ICP) of model Varian 725-ES. The analysis sample is dissolved in hydrofluoric acid to detect the element content in moles.

[0204] In the context of this specification, including the following examples and comparative examples, the molecular sieve precursor is measured using a solid-state nuclear magnetic resonance (NMR) instrument model Bruker 600M, which is used to analyze the element coordination environment in the sample.

[0205] In the context of this specification, including in the following examples and comparative examples, the content of organic matter in the molecular sieve precursor is determined by a thermogravimetric analyzer, the model of the thermogravimetric analyzer is SDT Q600 V20.9Build 20, and the sample is heated from 50°C to 800°C at a rate of 10°C / min in air or oxygen atmosphere to detect weight loss, and the weight loss percentage of the sample in the range of 200°C-700°C is the organic matter content of the sample.

[0206] The technical solutions of the present invention are further described in detail below through examples, but the protection scope of the present invention is not limited to these examples.

[0207] The preparation of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide in the present invention adopts the following method:

[0208] Preparation Example 1 Preparation

[0209] A mixture of 0.01 mol (98 wt%, 4.59 g) 1,2,4,5-tetrakis(bromomethyl)benzene (CAS: 15442-91-8) and 300 mL N,N-dimethylformamide (DMF) solvent, 0.02 mol (98 wt%, 4.59 g) anhydrous potassium carbonate as an acid binding agent, stirring uniformly at 1000-1500 rpm. Under the reflux device, the temperature was raised to 60-65°C while stirring, then 0.02 mol (10 mL) of dimethylamine (dimethylamine tetrahydrofuran solution, 2M) was added to the system at a constant pressure, and the dropping speed was controlled at 3-4 seconds / drop. After the addition was completed, it was continued to reflux for 6-8 hours, and then cooled to room temperature to obtain a reaction mixture. The reaction mixture was cooled at 0°C, then filtered and separated, and the filtrate was distilled under reduced pressure. The concentrated liquid was recrystallized with acetone, and the target product, nitrogen-containing heterocyclic quaternary ammonium salt, was obtained by filtration and drying:

[0210] Yield 67.7%.

[0211] Preparation of Example 2

[0212] The nitrogen-containing heterocyclic quaternary ammonium salt obtained according to Preparation Example 1 (0.1 mol), water (125 g) and anion resin (200 g) were stirred at room temperature for 12 h, and then filtered to obtain 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindol ammonium hydroxide solution.

[0213] Example 1

[0214] A mixture was prepared by uniformly mixing 26.815 g of deionized water, 10.08 g of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindol ammonium hydroxide solution (containing OSDA 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindol ammonium hydroxide 20 wt%), 15.023 g of silica sol (containing SiO2 40 wt%), and 2.637 g of aluminum hydroxide, and stirring at room temperature for 8 hours. The final material ratio (molar ratio) was Al2O3 / SiO2 = 0.15, OSDA / SiO2 = 0.08, and H2O / SiO2 = 25.

[0215] The above prepared mixture was loaded into a stainless steel autoclave and crystallized at 150°C and 30 rpm for 7 days. After crystallization, centrifugation and washing were performed until the pH value was close to neutral (pH = 7-8), and then drying was performed in an oven at 110°C to obtain a silico-aluminate.

[0216] ​The aluminosilicate prepared above was subjected to silanization treatment. 10 g of aluminosilicate, 500 ml of 2 mol / L nitric acid solution, and 6 g of tetramethoxysilane (silanization agent SIL) were mixed and stirred at room temperature for 1.0 h. The mixed solution was then hydrothermally treated at 160°C for 32 h. After treatment, the sample was centrifuged, washed to a near-neutral pH (pH = 7-8), and dried in an oven at 110°C to yield 6.1 g of sample.

[0217] The XRD spectrum of the sample is as follows Figure 1 As shown in Table 1, it is an SCM-52 molecular sieve precursor, and the yield of the molecular sieve precursor is 61 wt%.

[0218] The SEM images of the samples are as follows Figure 2 As shown, it is a nanosheet morphology.

[0219] Sample 27 Al NMR spectrum Figure 3 As shown, 29 Si NMR spectrum Figure 4 As shown, Figure 4 The peaks with chemical shifts of -14 ppm and -65 ppm correspond to the condensation between adjacent silanization reagents attached to the outer surface, indicating that the silane groups are successfully inserted into the interior of the molecular sieve precursor.

[0220] The molar ratio of silicon, aluminum, organic structure directing agent and silanization agent in the sample was measured by inductively coupled plasma atomic emission spectroscopy (ICP) and thermogravimetric analysis and was 1SiO2·0.02Al2O3·0.035OSDA·0.0018SIL.

[0221] Table 1

[0222]

[0223] Example 2

[0224] 33.80 g of deionized water, 2.637 g of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide solution (containing 20 wt% of OSDA2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide), 15.023 g of silica sol (containing 40 wt% of SiO2), and 2.637 g of aluminum hydroxide were mixed uniformly and stirred at room temperature for 7 hours to obtain a mixture. The final material ratio (molar ratio) was: Al2O3 / SiO2=0.15, OSDA / SiO2=0.1, H2O / SiO2=30.

[0225] The above prepared mixture was charged into a stainless steel autoclave and crystallized at 145°C for 5 days with rotation at 30 rpm. After the crystallization was completed, centrifugation and washing were performed until the pH value was close to neutral (pH = 7-8), and the silico-aluminate was dried in an oven at 110°C to obtain the silico-aluminate.

[0226] The above prepared silico-aluminate was subjected to silanization treatment, 10 g of the silico-aluminate, 500 ml of 1.5 mol / L nitric acid solution, and 7.5 g of tetramethoxysilane (silanization reagent SIL) were mixed and stirred at room temperature for 1 h, and the mixed solution was subjected to hydrothermal treatment at 165°C for 24 h. After the treatment was completed, centrifugation and washing were performed until the pH value was close to neutral (pH = 7-8), and the sample was dried in an oven at 120°C to obtain 6.5 g of the sample.

[0227] The XRD spectrum of the sample is shown in FIG. 2, and Table 2, and is the precursor of SCM-52 molecular sieve, and the yield of the molecular sieve precursor is 65 wt%. Figure 5 The SEM image of the sample is shown in FIG. 3, and is a nanosheet-like morphology.

[0228] Figure 6 Table 2

[0229] Table 2

[0230]

[0231] The molar ratio of silicon, aluminum, organic structure directing agent, and silanization reagent in the sample was determined by inductively coupled plasma atomic emission spectrometry (ICP) and thermogravimetric analysis to be 1SiO2·0.018Al2O3·0.037OSDA·0.0020SIL.

[0232] Example 3

[0233] A mixture was prepared by uniformly mixing 37.76 g of deionized water, 18.9 g of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide solution (containing 20 wt% of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide OSDA), 15.023 g of silica sol (containing 40 wt% of SiO2), and 1.758 g of aluminum hydroxide, and the mixture was stirred at room temperature for 10 hours to obtain a final mixture having a molar ratio of Al2O3 / SiO2 = 0.15, OSDA / SiO2 = 0.15, and H2O / SiO2 = 35.

[0234] The above prepared mixture was charged into a stainless steel autoclave and crystallized at 145°C for 5 days with rotation at 30 rpm. After the crystallization was completed, centrifugation and washing were performed until the pH value was close to neutral (pH = 7-8), and the silico-aluminate was dried in an oven at 110°C to obtain the silico-aluminate.

[0235] ​The silicate prepared above was subjected to silanization treatment. 10 g of the silicate, 400 mL of 2.5 mol / L nitric acid solution and 4.5 g of tetramethoxysilane (silanization reagent SIL) were mixed and stirred at room temperature for 1.0 h. The mixed solution was subjected to hydrothermal treatment at 150°C for 24 h. After the treatment, centrifugation and washing were performed until the pH value was close to neutral (pH = 7-8), and the sample was dried in an oven at 110°C to obtain 7.1 g of the sample.

[0236] The XRD pattern of the sample is shown in Fig. 2, and Table 3, and is a precursor of SCM-52 molecular sieve. The yield of the molecular sieve precursor was 71 wt%. Figure 7

[0237] The SEM image of the sample is shown in Fig. 3, and is a nanosheet-like morphology. Figure 8

[0238] Table 3

[0239]

[0240] The molar ratio of silicon, aluminum, organic structure directing agent and silanization reagent in the sample was determined by inductively coupled plasma atomic emission spectrometry (ICP) and thermogravimetric analysis to be 1 SiO2·0.017 Al2O3·0.042 OSDA·0.0017 SIL.

[0241] Example 4

[0242] A mixture was prepared by uniformly mixing 27.18 g of deionized water, 10.08 g of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide solution (containing 20 wt% of OSDA 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide), 15.03 g of silica sol (containing 40 wt% of SiO2), and 1.758 g of aluminum hydroxide. The mixture was stirred at room temperature for 7 h. The final material ratio (molar ratio) was: Al2O3 / SiO2=0.1, OSDA / SiO2=0.08, and H2O / SiO2=25.

[0243] The mixture prepared above was loaded into a stainless steel autoclave, and subjected to crystallization at 160°C and 35 rpm for 6 days. After the crystallization, centrifugation and washing were performed until the pH value was close to neutral (pH = 7-8), and the sample was dried in an oven at 120°C to obtain a precursor silicate.

[0244] ​​The silicate prepared above was subjected to silanization treatment. 10 g of the silicate, 400 mL of 3 mol / L nitric acid solution and 6 g of tetramethoxysilane (silanization reagent SIL) were mixed and stirred at room temperature for 1.0 h. The mixed solution was subjected to hydrothermal treatment at 170°C for 24 h. After the treatment, centrifugation and washing were performed until the pH value was close to neutral (pH = 7-8), and the sample was dried in an oven at 110°C to obtain 6.8 g of the sample.

[0245] The XRD pattern of the sample is shown in Table 4, which is the precursor of SCM-52 molecular sieve, and the yield of the molecular sieve precursor is 68 wt%.

[0246] The SEM image of the sample is similar to that of Figure 2 and is a nanosheet-like morphology.

[0247] Table 4

[0248]

[0249] The molar ratio of silicon, aluminum, organic structure directing agent and silanization reagent in the sample was determined by inductively coupled plasma atomic emission spectrometry (ICP) and thermogravimetric analysis to be 1SiO2·0.009Al2O3·0.028OSDA·0.0019SIL.

[0250] Example 5

[0251] 46.782 g of deionized water, 12.6 g of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide solution (containing 20 wt% of OSDA 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide), 20.833 g of tetraethyl orthosilicate (containing SiO2 28.8 wt%), and 1.758 g of aluminum isopropoxide were mixed uniformly, and the mixture was stirred at room temperature for 7 h to obtain a final material having a molar ratio of Al2O3 / SiO2 = 0.1, OSDA / SiO2 = 0.1, and H2O / SiO2 = 30.

[0252] The mixture prepared above was loaded into a stainless steel autoclave and subjected to crystallization at 150°C and 30 rpm for 7 days. After the crystallization, centrifugation and washing were performed until the pH value was close to neutral (pH = 7-8), and the sample was dried in an oven at 110°C to obtain a silicate.

[0253] The silicate was silanized by mixing 10 g of the silicate, 400 mL of 2 mol / L nitric acid solution and 4.9 g of tetramethoxysilane (silanization reagent SIL) at room temperature for 0.5 h. The mixture was hydrothermally treated at 175 °C for 24 h. After the treatment, centrifugation, washing to near neutral pH (pH = 7-8) and drying in an oven at 110 °C were performed to obtain 7.2 g of the sample.

[0254] The XRD pattern of the sample is shown in Table 5, which is a precursor of SCM-52 molecular sieve. The yield of the molecular sieve precursor is 72 wt%.

[0255] The SEM image of the sample is similar to that of Example 1, and Figure 6 is a nanosheet-like morphology.

[0256] Table 5

[0257]

[0258] The molar ratio of silicon, aluminum, organic structure directing agent and silanization reagent in the sample was determined by inductively coupled plasma atomic emission spectrometry (ICP) and thermogravimetric analysis to be 1 SiO2·0.0095 Al2O3·0.029 OSDA·0.0018 SIL.

[0259] Example 6

[0260] 31.333 g of deionized water, 18.9 g of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide solution (containing 20 wt% of OSDA 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide), 6.009 g of white carbon black (containing SiO2 100 wt%) and 1.367 g of aluminum oxide were uniformly mixed to prepare a mixture. After stirring at room temperature for 6 h, the final material ratio (molar ratio) was Al2O3 / SiO2 = 0.1, OSDA / SiO2 = 0.15 and H2O / SiO2 = 35.

[0261] The above-prepared mixture was loaded into a stainless steel autoclave, and crystallization was performed at 135 °C and 30 rpm for 10 days. After the crystallization, centrifugation, washing to near neutral pH (pH = 7-8) and drying in an oven at 100 °C were performed to obtain the silicate.

[0262] The silicate was silanized by mixing 10 g of the silicate, 500 mL of 2 mol / L nitric acid solution and 8 g of tetramethoxysilane (silanization reagent SIL) at room temperature for 1.0 h. The mixture was hydrothermally treated at 165 °C for 24 h. After the treatment, the sample was centrifuged, washed to near neutral pH (pH = 7-8) and dried in an oven at 110 °C to obtain 6.9 g of the sample.

[0263] The XRD pattern of the sample is shown in Table 6, which is a precursor of SCM-52 molecular sieve, and the yield of the molecular sieve precursor is 69 wt%.

[0264] The SEM image of the sample is similar to that of the sample of Example 1, and Figure 6 is a nanosheet-like morphology.

[0265] Table 6

[0266]

[0267] The molar ratio of silicon, aluminum, organic structure directing agent and silanization reagent in the sample was determined by inductively coupled plasma atomic emission spectrometry (ICP) and thermogravimetric analysis to be 1 SiO2·0.0093 Al2O3·0.032 OSDA·0.0025 SIL.

[0268] Application Example

[0269] The SCM-52 molecular sieve precursor prepared in Example 1 was calcined at 550 °C in an oxygen-containing atmosphere for 6 h to obtain a sample. The XRD pattern of the sample is shown in Table 7, which is a SCM-53 molecular sieve.

[0270] Table 7

[0271]

[0272] The above describes the preferred embodiments of the present application, but the present application is not limited thereto. Within the technical concept of the present application, various simple modifications can be made to the technical solutions of the present application, including the combination of various technical features in any other suitable manner, and these simple modifications and combinations should also be considered as disclosed by the present application and fall within the protection scope of the present application.

Claims

1. A SCM-52 molecular sieve precursor comprising silicon dioxide, aluminum oxide, an organic structure-directing agent, and a silanization agent, wherein the organic structure-directing agent comprises a compound represented by formula I. In Formula I, R1, R2, R3 and R4 are the same or different and are independently selected from C 1-8 Alkyl, preferably selected from C 1-4 Alkyl, more preferably selected from methyl, ethyl or propyl, X - Selected from OH - , halogen anion, nitrate or monovalent organic acid radical; R5 and R6 are the same or different, each independently selected from hydrogen, halogen, C 1-4 Alkyl, preferably selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl or propyl; Preferably, the organic structure directing agent is selected from one or more of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide, 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium bromide and 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium chloride.

2. A SCM-52 molecular sieve precursor, characterized in that: The X-ray diffraction spectrum of the SCM-52 molecular sieve precursor includes one or more diffraction peaks at 2θ of 3.985°±0.30°, 8.306°±0.30°, 12.081°±0.30° and 25.921°±0.50°. Preferably, the diffraction peak with 2θ of 3.985°±0.30° is the strongest peak.

3. The SCM-52 molecular sieve precursor according to claim 1 or 2, characterized in that The X-ray diffraction spectrum of the SCM-52 molecular sieve precursor also includes one or more diffraction peaks with 2θ of 13.941°±0.30°, 17.88°±0.50°, 22.146°±0.50° and 24.225°±0.30°.

4. The SCM-52 molecular sieve precursor according to any one of claims 1 to 3, characterized in that The X-ray diffraction spectrum of the SCM-52 molecular sieve precursor includes the diffraction peaks shown in Table A: Table A Preferably, the X-ray diffraction spectrum of the SCM-52 molecular sieve precursor includes the diffraction peaks shown in Table B: Table B 。 5. The SCM-52 molecular sieve precursor according to any one of claims 1 to 4, characterized in that The X-ray diffraction spectrum of the SCM-52 molecular sieve precursor includes the diffraction peaks shown in Table C: Table C b: varies with 2θ Preferably, the X-ray diffraction spectrum of the SCM-52 molecular sieve precursor includes the diffraction peaks shown in Table D: Table D Where b varies with 2θ.

6. The SCM-52 molecular sieve precursor according to any one of claims 1 to 5, characterized in that The SCM-52 molecular sieve precursor comprises silicon, aluminum, oxygen and nitrogen, and / or The silanization agent includes a compound shown in formula II In Formula II, R7, R8, R9 and R 10 the same or different, each independently selected from hydrogen, halogen, C 1-6 Alkyl, C 1-6 Alkoxy, preferably selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, propyl, methoxy, ethoxy, propoxy; preferably, R7, R8, R9 and R 10 Same, all selected from C 1-4 Alkoxy; preferably, the silanizing agent is selected from one or more of tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraisopropoxysilane, monomethylchlorosilane, dimethylchlorosilane, monomethylmethoxysilane, dimethylmethoxysilane, monomethylethoxysilane and dimethylethoxysilane; and / or In the SCM-52 molecular sieve precursor, the molar ratio of silicon dioxide to aluminum oxide is 10-500, preferably 20-200, the molar ratio of silicon dioxide to organic structure directing agent is 5-40, preferably 20-40, and the molar ratio of silicon dioxide to silanization agent is 200-800, preferably 300-600. Preferably, the SCM-52 molecular sieve precursor has a chemical composition with the following molar ratio: mSiO2·nAl2O3·qOSDA·ySIL, wherein OSDA represents an organic structure directing agent, SIL represents a silanization agent, 10≤m / n≤500, 5≤m / q≤40, 200≤m / y≤800, preferably 20≤m / n≤200, 20≤m / q≤40, 300≤m / y≤600; and / or The crystals of the SCM-52 molecular sieve precursor have a nano-platelet morphology, and the average thickness of the crystals is less than or equal to 30 nm, preferably 2 nm to 27 nm, more preferably 5 nm to 25 nm; and / or The SCM-52 molecular sieve precursor further comprises one or more elements selected from the group consisting of sodium, potassium, germanium, titanium, boron, zirconium, tin and iron.

7. A method for preparing an SCM-52 molecular sieve precursor, comprising the following steps: S1: crystallizing a mixture containing a silicon source, an aluminum source, an organic structure directing agent, and a solvent to obtain a crystallized product; S2: Under acidic conditions, the crystallized product is mixed with a silanization agent and then subjected to hydrothermal treatment; preferably, the organic structure directing agent comprises a compound represented by formula I, In Formula I, R1, R2, R3 and R4 are the same or different and are independently selected from C 1-8 Alkyl, preferably selected from C 1-4 Alkyl, more preferably selected from methyl, ethyl or propyl; X - Selected from OH - , halogen anion, nitrate or monovalent organic acid radical; R5 and R6 are the same or different, each independently selected from hydrogen, halogen, C 1-4 Alkyl, preferably selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl or propyl; Preferably, the organic structure directing agent is selected from one or more of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide, 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium bromide and 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium chloride.

8. The preparation method according to claim 7, characterized in that The silicon source is calculated as SiO2, and the aluminum source is calculated as Al2O3, and the molar ratio of the silicon source to the aluminum source is 1:(0.0025-0.25), preferably 1:(0.025-0.2), and more preferably 1:(0.0025-0.15); The molar ratio of the silicon source to the organic structure directing agent is 1:(0.050-0.50), preferably 1:(0.10-0.50), and more preferably 1:(0.30-0.50); The molar ratio of the silicon source to the solvent is 1:(8-100), preferably 1:(15-100), more preferably 1:(15-50); and / or The acidic condition is provided by an acid solution. Preferably, the concentration of the acid solution is 0.5 mol / L-6 mol / L, preferably 1 mol / L-5 mol / L, more preferably 1.5 mol / L-4.5 mol / L; Preferably, the liquid-to-solid ratio of the acid solution to the crystallized product is (10-100) mL:1 g, preferably (20-80) mL:1 g, more preferably (40-60) mL:1 g; and / or The mass ratio of the silanization agent to the crystallized product is (0.1-4):1, preferably (0.2-2.5):

1.

9. The preparation method according to claim 7 or 8, characterized in that The acid solution is selected from aqueous or ethanol solutions of hydrochloric acid, acetic acid or nitric acid; and / or The silanization agent includes a compound shown in formula II In Formula II, R7, R8, R9 and R 10 the same or different, each independently selected from hydrogen, halogen, C 1-6 Alkyl, C 1-6 Alkoxy, preferably selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, propyl, methoxy, ethoxy, propoxy; preferably, R7, R8, R9 and R 10 Same, all selected from C 1-4 Alkoxy; preferably, the silanizing agent is selected from one or more of tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraisopropoxysilane, monomethylchlorosilane, dimethylchlorosilane, monomethylmethoxysilane, dimethylmethoxysilane, monomethylethoxysilane and dimethylethoxysilane; and / or The silicon source is selected from one or more of silica sol, silica gel, ethyl orthosilicate, white carbon black and silicic acid; and / or The aluminum source is selected from one or more of aluminum hydroxide, aluminum isopropoxide, aluminum nitrate and aluminum oxide; and / or The solvent is selected from water; and / or The mixture does not contain alkali metals or alkaline earth metals.

10. The preparation method according to any one of claims 7 to 9, characterized in that The crystallization process of the mixture is dynamic crystallization with rotation or stirring, the rotation speed is 10 rpm-60 rpm, and the stirring speed is 30 rpm-400 rpm; the crystallization conditions of the mixture are crystallization at 130° C.-180° C. for 1-12 days, preferably crystallization at 135° C.-175° C. for 2-11 days, more preferably crystallization at 140° C.-170° C. for 3-10 days; and / or The temperature of the hydrothermal treatment is 80°C-190°C; and / or The time of the hydrothermal treatment is 5h-48h.

11. A molecular sieve precursor composition comprising the SCM-52 molecular sieve precursor according to any one of claims 1 to 6 or the SCM-52 molecular sieve precursor prepared by the preparation method according to any one of claims 7 to 10, and an optional binder.

12. Use of the SCM-52 molecular sieve precursor according to any one of claims 1 to 6, or the SCM-52 molecular sieve precursor prepared by the preparation method according to any one of claims 7 to 10, or the molecular sieve precursor composition according to claim 11 as an adsorbent or a catalyst for conversion of organic compounds or for preparing molecular sieves.

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