A method for preparing ultra-low profile metal foil with low permeability
By employing a sandwich structure design of electroplating-sputtering-electroplating and controlled peeling technology, combined with a second metal foil containing nickel, the problem of perforation in high-frequency, low-profile metal foils was solved, achieving stable transmission of high-frequency signals and reliability of fine circuits.
CN120797121BActive Publication Date: 2026-05-26BEIJING KUIGUAN TECHNOLOGY CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BEIJING KUIGUAN TECHNOLOGY CO LTD
- Filing Date
- 2025-07-18
- Publication Date
- 2026-05-26
AI Technical Summary
Technical Problem
Existing high-frequency, low-profile metal foils have the problem of perforation, which can cause open circuits or short circuits in the circuit, affecting the stability and reliability of signal transmission.
Method used
A sandwich structure design of electroplating-sputtering-electroplating and controllable peeling technology are adopted, combined with a second metal foil containing nickel, to form a dense metal foil by sputtering, which blocks the penetration path and inhibits grain boundary migration and pore formation.
Benefits of technology
It effectively solved the perforation problem, improved the quality and reliability of the circuit and the high-frequency signal transmission performance, and increased the yield of fine circuits.
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Smart Images
Figure CN120797121B_ABST
Abstract
This application discloses a method for preparing an ultra-low profile metal foil with low permeability, comprising the following steps: S10: forming a release layer on the surface of a carrier foil; S20: electroplating a first metal foil on a surface of the release layer away from the carrier foil; S30: sputtering a second metal foil on the surface of the first metal foil away from the carrier foil; S40: electroplating a third metal foil on the surface of the second metal foil away from the carrier foil; S50: peeling the first metal foil, the second metal foil, and the third metal foil as a whole from the carrier foil to obtain the ultra-low profile metal foil; wherein, the first metal foil, the second metal foil, and the third metal foil constitute the ultra-low profile metal foil; the thickness of the first metal foil is 1 / 4 to 3 / 4 of the thickness of the ultra-low profile metal foil, and the second metal foil includes at least Ni. By combining an electroplating-sputtering-electroplating sandwich structure with controlled peeling technology, a dense metal foil is formed, blocking the penetration of chemical solutions, solving the "permeability problem" of traditional electrolytic copper foil, and improving the yield of fine circuits.
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