A radiation-resistant, low-phase-noise voltage-controlled oscillator based on SOI technology

Abstract

This invention discloses a radiation-resistant, low-phase-noise voltage-controlled oscillator (VCO) based on SOI technology, relating to the field of oscillator technology. It addresses the technical problem that existing SOI-based VCOs cannot simultaneously achieve low phase noise and high radiation resistance. The SOI-based VCO includes an energy storage unit and a negative transconductance unit. The energy storage unit forms a resonant cavity through inductors and capacitors. The negative transconductance unit is connected to the energy storage unit. The negative transconductance unit is configured to include at least a first cross-coupled pair and a second cross-coupled pair composed of multiple transistors. The first cross-coupled pair generates negative resistance to compensate for losses in the energy storage unit, and the second cross-coupled pair acts as a current switching network. The first and second cross-coupled pairs form a negative resistance characteristic, converting DC energy into AC oscillation energy to compensate for resonant cavity losses. The generated oscillation signal is output from the output node.

Description

Technical Field

[0001] This invention relates to the field of oscillator technology, and more specifically, to a radiation-resistant, low-phase-noise voltage-controlled oscillator based on SOI technology. Background Technology

[0002] Voltage-controlled oscillators (VCOs) are core modules in modern RF and analog mixed-signal circuit systems, widely used in high-performance communication systems, high-speed data converters, and precision measuring instruments. Their core phase noise and frequency tuning range directly determine the signal-to-noise ratio, communication quality, positioning accuracy, and anti-interference capability of the entire system. Space radiation can induce single-event effects in oscillators, causing frequency jumps or instantaneous phase abrupt changes. Simultaneously, the long-term cumulative total dose effect may alter the parameters of transistors and LC components, causing oscillation frequency drift or oscillation cessation. Therefore, ensuring the stability of VCOs in key performance indicators and preventing significant degradation due to high-energy particles in harsh radiation environments is a crucial requirement for ensuring reliable system operation.

[0003] Existing voltage-controlled oscillators (VCOs) are typically based on standard bulk silicon CMOS (complementary metal-oxide-semiconductor) or bipolar processes. However, the parasitic PN junctions inherent in bulk silicon processes exhibit significant leakage and charge accumulation under high-dose radiation, leading to frequency drift, tuning range compression, and even malfunction of the VCO. While hardening measures such as deep-well isolation can mitigate these issues to some extent, these methods typically introduce additional parasitic capacitance, reducing the resonant cavity Q value and consequently degrading phase noise. Furthermore, the severe substrate coupling effect in conventional processes makes them extremely sensitive to noise and radiation disturbances. Conventional circuit structures still exhibit significant degradation in oscillation amplitude, frequency, and phase noise characteristics when faced with radiation-induced MOS transistor threshold voltage drift and increased leakage current. Therefore, existing SOI-based VCOs often struggle to achieve an optimal balance between low phase noise and radiation resistance. Summary of the Invention

[0004] The purpose of this invention is to provide a radiation-resistant, low-phase-noise voltage-controlled oscillator based on SOI technology, to solve the technical problem that existing SOI-based voltage-controlled oscillators cannot simultaneously achieve low phase noise and high radiation resistance. Therefore, this invention is achieved through the following solution.

[0005] This invention provides a radiation-resistant, low-phase-noise voltage-controlled oscillator based on SOI technology, comprising:

[0006] The energy storage unit forms a resonant cavity through inductors and capacitors;

[0007] A negative transconductance unit is connected to the energy storage unit;

[0008] The negative transconductance unit is configured to include at least a first cross-coupled pair and a second cross-coupled pair consisting of multiple transistors; the first cross-coupled pair is used to generate negative resistance to compensate for the losses of the energy storage unit, and the second cross-coupled pair acts as a current switching network.

[0009] The first cross-coupled pair and the second cross-coupled pair form a negative resistance characteristic, converting DC energy into AC oscillation energy, compensating for the loss of the resonant cavity, and the generated oscillation signal is output from the output node.

[0010] Compared with existing technologies, in the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention, the energy storage unit forms a resonant cavity through inductors and capacitors. The parasitic diode between the n-well and the substrate can be eliminated using varactor diode reverse biasing technology, grounding the varactor diode n-well and achieving radiation hardening in the varactor diode, thereby improving the radiation resistance of the voltage-controlled oscillator. The negative transconductance unit can use stacked transistors. When a single-particle radiation is incident on one transistor, since the other transistor is almost unaffected, only a small amount of single-particle current pulse flows to the ground or power supply, effectively reducing the single-particle effect of the circuit, further improving the radiation resistance of the voltage-controlled oscillator and reducing phase noise. Furthermore, in the above technical solution, the negative transconductance unit is configured to include at least a first cross-coupled pair and a second cross-coupled pair composed of multiple transistors. The first cross-coupled pair is used to generate negative resistance to compensate for the losses of the energy storage unit, and the second cross-coupled pair... The coupling pairs act as a current switching network; the first and second cross-coupled pairs form a negative resistance characteristic, converting DC energy into AC oscillation energy to compensate for the resonant cavity loss, and the generated oscillation signal is output from the output node. Specifically, at the initial power-on instant, the thermal noise of the transistor or power supply disturbance generates a weak voltage difference at the output node. The inductance and capacitance of the energy storage unit form a resonant cavity, and oscillation is formed through the alternating conversion of electromagnetic energy. The first and second cross-coupled pairs (cross-coupled transistors) form a negative resistance characteristic, continuously converting DC energy into AC oscillation energy to compensate for the resonant cavity loss; the generated oscillation signal is directly output as a sine wave from the output node of the voltage-controlled oscillator. Furthermore, the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention can adopt adaptive body bias technology, thereby reducing the threshold voltage, further generating a larger negative transconductance, and improving the phase noise of the voltage-controlled oscillator. Through the above technical solution of the present invention, the technical problem that existing voltage-controlled oscillators based on SOI technology cannot simultaneously achieve low phase noise and high radiation resistance is solved.

[0011] Furthermore, the radiation-resistant low phase noise voltage-controlled oscillator based on SOI technology of the present invention also includes a transconductance multiplier unit;

[0012] The transconductance multiplier unit has a first end and a second end; the input end of the negative transconductance unit is connected to the first end of the transconductance multiplier unit, and the energy storage unit is connected to the second end of the transconductance multiplier unit.

[0013] Furthermore, in the radiation-resistant low phase noise voltage-controlled oscillator based on SOI technology of the present invention, the transconductance multiplier unit includes a first inductor and a second inductor;

[0014] The first terminal of the first inductor and the first terminal of the second inductor are both connected to the negative transconductance unit;

[0015] The second end of the first inductor and the second end of the second inductor are both connected to the energy storage unit.

[0016] Furthermore, in the radiation-resistant low phase noise voltage-controlled oscillator based on SOI technology of the present invention, the energy storage unit includes a third inductor, a first variable capacitor, and a second variable capacitor.

[0017] The first end of the third inductor is connected to the second end of the first inductor, the second end of the third inductor is connected to the second end of the second inductor, and the third end of the third inductor is connected to the power supply.

[0018] The first terminal of the first variable capacitor is connected to the second terminal of the first inductor, the second terminal of the first variable capacitor is connected to the first terminal of the second variable capacitor, and the connection point is connected to the control voltage; the second terminal of the second variable capacitor is connected to the second terminal of the second inductor.

[0019] Furthermore, in the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention, the first cross-coupling pair includes a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, and a fourth NMOS transistor; the gate of the first NMOS transistor is connected to the drain of the second NMOS transistor, the drain of the first NMOS transistor is connected to the first terminal of the first inductor, and the source of the first NMOS transistor is connected to the drain of the third NMOS transistor; the gate of the second NMOS transistor is connected to the drain of the first NMOS transistor, the drain of the second NMOS transistor is connected to the first terminal of the second inductor, and the source of the second NMOS transistor is connected to the drain of the fourth NMOS transistor; the gate of the third NMOS transistor is connected to the drain of the second NMOS transistor; the gate of the fourth NMOS transistor is connected to the drain of the first NMOS transistor; the first cross-coupling pair is connected to the second cross-coupling pair through the sources of the third NMOS transistor and the fourth NMOS transistor.

[0020] Furthermore, in the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention, the second cross-coupling pair includes a fifth NMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, and an eighth NMOS transistor; the gate of the fifth NMOS transistor is connected to the drain of the sixth NMOS transistor, the drain of the fifth NMOS transistor is connected to the source of the third NMOS transistor, and the source of the fifth NMOS transistor is connected to the drain of the seventh NMOS transistor; the gate of the sixth NMOS transistor is connected to the drain of the fifth NMOS transistor, the drain of the sixth NMOS transistor is connected to the source of the fourth NMOS transistor, and the source of the sixth NMOS transistor is connected to the drain of the eighth NMOS transistor; the gate of the seventh NMOS transistor is connected to the drain of the sixth NMOS transistor, and the source of the seventh NMOS transistor is grounded; the gate of the eighth NMOS transistor is connected to the drain of the fifth NMOS transistor, and the source of the eighth NMOS transistor is grounded.

[0021] Furthermore, in the radiation-resistant low phase noise voltage-controlled oscillator based on SOI technology of the present invention, the body terminal of the first NMOS transistor is connected to the body terminals of the third NMOS transistor, the fifth NMOS transistor and the seventh NMOS transistor, and is also connected to the source of the fourth NMOS transistor and the drain of the sixth NMOS transistor.

[0022] Furthermore, in the radiation-resistant low phase noise voltage-controlled oscillator based on SOI technology of the present invention, the body terminal of the second NMOS transistor is connected to the body terminals of the fourth, sixth, and eighth NMOS transistors, and is also connected to the source of the third NMOS transistor and the drain of the fifth NMOS transistor. Attached Figure Description

[0023] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0024] Figure 1 This is a schematic diagram of the radiation-resistant, low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention.

[0025] Figure 2 This is a simulation diagram of the phase noise of the radiation-resistant low phase noise voltage-controlled oscillator based on SOI technology according to the present invention.

[0026] Figure label:

[0027] Figure 1In the diagram, L1 is the first inductor; L2 is the second inductor; L3 is the third inductor; C1 is the first variable capacitor; C2 is the second variable capacitor; M1 is the first NMOS transistor; M2 is the second NMOS transistor; M3 is the third NMOS transistor; M4 is the fourth NMOS transistor; M5 is the fifth NMOS transistor; M6 is the sixth NMOS transistor; M7 is the seventh NMOS transistor; M8 is the eighth NMOS transistor; and VCtrl is the control voltage. Detailed Implementation

[0028] To make the technical problems to be solved, the technical solutions, and the beneficial effects of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.

[0029] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0030] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified. "Several" means one or more, unless otherwise explicitly specified.

[0031] Existing voltage-controlled oscillators (VCOs) are typically based on standard bulk silicon CMOS (complementary metal-oxide-semiconductor) or bipolar processes. However, the parasitic PN junctions inherent in bulk silicon processes exhibit significant leakage and charge accumulation under high-dose radiation, leading to frequency drift, tuning range compression, and even malfunction of the VCO. While hardening measures such as deep-well isolation can mitigate these issues to some extent, these methods typically introduce additional parasitic capacitance, reducing the resonant cavity Q value and consequently degrading phase noise. Furthermore, the severe substrate coupling effect in conventional processes makes them extremely sensitive to noise and radiation disturbances. Conventional circuit structures still exhibit significant degradation in oscillation amplitude, frequency, and phase noise characteristics when faced with radiation-induced MOS transistor threshold voltage drift and increased leakage current. Therefore, existing SOI-based VCOs often struggle to achieve an optimal balance between low phase noise and radiation resistance.

[0032] To address the aforementioned technical problems, this invention provides a radiation-resistant, low-phase-noise voltage-controlled oscillator based on SOI technology. This voltage-controlled oscillator includes an energy storage unit and a negative transconductance unit; wherein:

[0033] The energy storage unit forms a resonant cavity through inductors and capacitors; the negative transconductance unit is connected to the energy storage unit; the negative transconductance unit is configured to include at least a first cross-coupled pair and a second cross-coupled pair composed of multiple transistors; the first cross-coupled pair is used to generate negative resistance to compensate for the losses of the energy storage unit, and the second cross-coupled pair acts as a current switching network; the first cross-coupled pair and the second cross-coupled pair form a negative resistance characteristic, converting DC energy into AC oscillation energy, compensating for the losses of the resonant cavity, and the generated oscillation signal is output from the output node.

[0034] In the SOI-based low-phase-noise voltage-controlled oscillator of the present invention, the energy storage unit forms a resonant cavity through inductors and capacitors. A varactor diode reverse bias technique can be used to eliminate the parasitic diode between the n-well and the substrate, grounding the varactor diode n-well and achieving radiation hardening in the varactor diode, thereby improving the radiation resistance of the voltage-controlled oscillator. The negative transconductance unit can be a stacked transistor. When a single-particle radiation incident on one transistor, since the other transistor is almost unaffected, only a small amount of single-particle current pulse flows to the ground or power supply, effectively reducing the single-particle effect of the circuit and further improving the radiation resistance of the voltage-controlled oscillator and reducing phase noise. Furthermore, in the above technical solution, the negative transconductance unit is configured to include at least a first cross-coupled pair and a second cross-coupled pair composed of multiple transistors. The first cross-coupled pair is used to generate negative resistance to compensate for the losses of the energy storage unit. Two cross-coupled pairs act as a current switching network; the first and second cross-coupled pairs form a negative resistance characteristic, converting DC energy into AC oscillating energy to compensate for the resonant cavity loss, and the generated oscillation signal is output from the output node. Specifically, at the initial power-on instant, the thermal noise of the transistor or power supply disturbance generates a weak voltage difference at the output node. The inductance and capacitance of the energy storage unit form a resonant cavity, and oscillation is formed through the alternating conversion of electromagnetic energy. The first and second cross-coupled pairs (cross-coupled transistors) form a negative resistance characteristic, continuously converting DC energy into AC oscillating energy to compensate for the resonant cavity loss; the generated oscillation signal is directly output as a sine wave from the output node of the voltage-controlled oscillator. Furthermore, the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention can adopt adaptive body bias technology, thereby reducing the threshold voltage, further generating a larger negative transconductance, and improving the phase noise of the voltage-controlled oscillator. Through the above technical solution of the present invention, the technical problem that existing voltage-controlled oscillators based on SOI technology cannot simultaneously achieve low phase noise and high radiation resistance is solved.

[0035] As one possible implementation, the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention further includes a transconductance multiplier unit; the transconductance multiplier unit has a first terminal and a second terminal; the input terminal of the negative transconductance unit is connected to the first terminal of the transconductance multiplier unit, and the energy storage unit is connected to the second terminal of the transconductance multiplier unit. With this technical solution, the transconductance multiplier unit can be composed of multiple inductors. By setting the transconductance multiplier unit between the energy storage unit and the negative transconductance unit, the generated negative transconductance can be significantly enhanced, and power consumption can be reduced, further improving the radiation resistance of the voltage-controlled oscillator.

[0036] As one possible implementation, in the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention, the transconductance multiplication unit includes a first inductor L1 and a second inductor L2; the first end of the first inductor L1 and the first end of the second inductor L2 are both connected to a negative transconductance unit; the second end of the first inductor L1 and the second end of the second inductor L2 are both connected to an energy storage unit. With this technical solution, the transconductance multiplication unit can be composed of the first inductor L1 and the second inductor L2. By setting the transconductance multiplication unit composed of the first inductor L1 and the second inductor L2 between the energy storage unit and the negative transconductance unit, the generated negative transconductance can be significantly enhanced, and power consumption can be reduced, further improving the radiation resistance of the voltage-controlled oscillator.

[0037] In one possible implementation, the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention includes an energy storage unit comprising a third inductor L3, a first variable capacitor C1, and a second variable capacitor C2. The first end of the third inductor L3 is connected to the second end of the first inductor L1, the second end of the third inductor L3 is connected to the second end of the second inductor L2, and the third end of the third inductor L3 is connected to a power supply. The first end of the first variable capacitor C1 is connected to the second end of the first inductor L1, the second end of the first variable capacitor C1 is connected to the first end of the second variable capacitor C2, and the connection points are both connected to the control voltage VCtrl. The second end of the second variable capacitor C2 is connected to the second end of the second inductor L2. Using this technical solution, the parasitic diode between the n-well of the varactor (first variable capacitor C1 and second variable capacitor C2) and the substrate can be eliminated, grounding the varactor n-well and achieving radiation hardening in the varactor, thereby further improving the radiation resistance of the voltage-controlled oscillator.

[0038] In one possible implementation, the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention includes a first cross-coupling pair comprising a first NMOS transistor M1, a second NMOS transistor M2, a third NMOS transistor M3, and a fourth NMOS transistor M4; the gate of the first NMOS transistor M1 is connected to the drain of the second NMOS transistor M2, the drain of the first NMOS transistor M1 is connected to the first terminal of the first inductor L1, and the source of the first NMOS transistor M1 is connected to the drain of the third NMOS transistor M3; the gate of the second NMOS transistor M2 is connected to the drain of the first NMOS transistor M1, the drain of the second NMOS transistor M2 is connected to the first terminal of the second inductor L2, and the source of the second NMOS transistor M2 is connected to the drain of the fourth NMOS transistor M4; the gate of the third NMOS transistor M3 is connected to the drain of the second NMOS transistor M2; and the gate of the fourth NMOS transistor M4 is connected to the drain of the first NMOS transistor M1; the first cross-coupling pair is connected to the second cross-coupling pair through the sources of the third NMOS transistor M3 and the fourth NMOS transistor M4. When this technical solution is adopted, the first cross-coupled pair compensates for the losses of the energy storage circuit by generating a negative resistance.

[0039] In one possible implementation, in the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention, the second cross-coupling pair includes a fifth NMOS transistor M5, a sixth NMOS transistor M6, a seventh NMOS transistor M7, and an eighth NMOS transistor M8; the gate of the fifth NMOS transistor M5 is connected to the drain of the sixth NMOS transistor M6, the drain of the fifth NMOS transistor M5 is connected to the source of the third NMOS transistor M3, and the source of the fifth NMOS transistor M5 is connected to the drain of the seventh NMOS transistor M7; the gate of the sixth NMOS transistor M6 is connected to the drain of the fifth NMOS transistor M5, the drain of the sixth NMOS transistor M6 is connected to the source of the fourth NMOS transistor M4, and the source of the sixth NMOS transistor M6 is connected to the drain of the eighth NMOS transistor M8; the gate of the seventh NMOS transistor M7 is connected to the drain of the sixth NMOS transistor M6, and the source of the seventh NMOS transistor M7 is grounded; the gate of the eighth NMOS transistor M8 is connected to the drain of the fifth NMOS transistor M5, and the source of the eighth NMOS transistor M8 is grounded. When this technical solution is adopted, the second cross-coupled pair acts as a current switching network, which improves the generated negative transconductance by providing a larger loop gain.

[0040] In one possible implementation, in the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention, the body terminal of the first NMOS transistor M1 is connected to the body terminals of the third NMOS transistor M3, the fifth NMOS transistor M5, and the seventh NMOS transistor M7, and together they are connected to the source of the fourth NMOS transistor M4 and the drain of the sixth NMOS transistor M6. With this technical solution, the threshold voltage of the transistors can be reduced by a positive body bias, thereby generating a larger negative transconductance and effectively improving the phase noise of the voltage-controlled oscillator.

[0041] In one possible implementation, in the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology of the present invention, the body terminal of the second NMOS transistor M2 is connected to the body terminals of the fourth NMOS transistor M4, the sixth NMOS transistor M6, and the eighth NMOS transistor M8, and together they are connected to the source of the third NMOS transistor M3 and the drain of the fifth NMOS transistor M5. Similarly, with this technical solution, the threshold voltage of the transistors can be reduced by a positive body bias, thereby generating a larger negative transconductance and improving the phase noise of the voltage-controlled oscillator.

[0042] Furthermore, simulation experiments were conducted on the radiation-resistant low-phase-noise voltage-controlled oscillator based on SOI technology described above. Specifically, the simulation experimental components of this invention adopted XMC 55nm RFSOI CMOS technology, and the simulation circuit of this invention was built on the Cadence IC617 simulation experimental platform under the Linux system. The simulation experiment of this invention used the Specture RF simulation tool to simulate the circuit of this invention, with a given power supply voltage VDD of 0.8V and an operating temperature of 27℃.

[0043] The simulation process is as follows: Under the above operating conditions, using the Specture RF simulation tool, corresponding output ports are added to the positive output terminal OUTP and the negative output terminal OUTN, respectively, to perform PSS+PNOISE simulation on the radiation-resistant low phase noise voltage-controlled oscillator based on SOI technology of this invention; the specific simulation results are as follows. Figure 2 As shown, Figure 2 The simulation results of phase noise are shown. Figure 2 In the diagram, the horizontal axis represents the offset frequency (Hz), and the vertical axis represents the output signal phase noise (dBc / Hz). From Figure 2The simulation results of phase noise show that the phase noise of the voltage-controlled oscillator of this invention at a 10MHz frequency offset under a 25GHz operating frequency is -119.7dBc / Hz without volume bias technology. With volume bias technology, the phase noise is improved to -122.4dBc / Hz, while the power consumption is only 2.85mW. The comprehensive simulation results demonstrate that the radiation-resistant, low-phase-noise voltage-controlled oscillator based on SOI technology of this invention maintains extremely low phase noise and excellent radiation resistance while ensuring high frequency operation.

[0044] In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0045] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A radiation-resistant, low-phase-noise voltage-controlled oscillator based on SOI technology, characterized in that, include: The energy storage unit forms a resonant cavity through inductors and capacitors; A negative transconductance unit is connected to the energy storage unit; The transconductance multiplier unit includes a first inductor and a second inductor, both the first end of the first inductor and the first end of the second inductor are connected to the negative transconductance unit; both the second end of the first inductor and the second end of the second inductor are connected to the energy storage unit. The negative transconductance unit is configured to include at least a first cross-coupled pair and a second cross-coupled pair consisting of multiple transistors; the first cross-coupled pair is used to generate negative resistance to compensate for the losses of the energy storage unit, and the second cross-coupled pair acts as a current switching network. The first cross-coupled pair and the second cross-coupled pair form a negative resistance characteristic, which converts DC energy into AC oscillation energy, compensates for the loss of the resonant cavity, and the generated oscillation signal is output from the output node; Wherein: the first cross-coupling pair includes a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, and a fourth NMOS transistor; the gate of the first NMOS transistor is connected to the drain of the second NMOS transistor, the drain of the first NMOS transistor is connected to the first terminal of the first inductor, and the source of the first NMOS transistor is connected to the drain of the third NMOS transistor; the gate of the second NMOS transistor is connected to the drain of the first NMOS transistor, the drain of the second NMOS transistor is connected to the first terminal of the second inductor, and the source of the second NMOS transistor is connected to the drain of the fourth NMOS transistor; the gate of the third NMOS transistor is connected to the drain of the second NMOS transistor; the gate of the fourth NMOS transistor is connected to the drain of the first NMOS transistor; the first cross-coupling pair is connected to the second cross-coupling pair through the sources of the third NMOS transistor and the fourth NMOS transistor; The second cross-coupled pair includes a fifth NMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, and an eighth NMOS transistor; The gate of the fifth NMOS transistor is connected to the drain of the sixth NMOS transistor, the drain of the fifth NMOS transistor is connected to the source of the third NMOS transistor, and the source of the fifth NMOS transistor is connected to the drain of the seventh NMOS transistor; the gate of the sixth NMOS transistor is connected to the drain of the fifth NMOS transistor, the drain of the sixth NMOS transistor is connected to the source of the fourth NMOS transistor, and the source of the sixth NMOS transistor is connected to the drain of the eighth NMOS transistor; the gate of the seventh NMOS transistor is connected to the drain of the sixth NMOS transistor, and the source of the seventh NMOS transistor is grounded; the gate of the eighth NMOS transistor is connected to the drain of the fifth NMOS transistor, and the source of the eighth NMOS transistor is grounded. The body terminal of the first NMOS transistor is connected to the body terminals of the third, fifth, and seventh NMOS transistors, and is also connected to the source of the fourth NMOS transistor and the drain of the sixth NMOS transistor. The body terminal of the second NMOS transistor is connected to the body terminals of the fourth, sixth, and eighth NMOS transistors, and is also connected to the source of the third NMOS transistor and the drain of the fifth NMOS transistor.

2. The radiation-resistant, low-phase-noise voltage-controlled oscillator based on SOI technology according to claim 1, characterized in that, The transconductance multiplier unit has a first end and a second end; the input end of the negative transconductance unit is connected to the first end of the transconductance multiplier unit, and the energy storage unit is connected to the second end of the transconductance multiplier unit.

3. The radiation-resistant, low-phase-noise voltage-controlled oscillator based on SOI technology according to claim 2, characterized in that, The energy storage unit includes a third inductor, a first variable capacitor, and a second variable capacitor; The first end of the third inductor is connected to the second end of the first inductor, the second end of the third inductor is connected to the second end of the second inductor, and the third end of the third inductor is connected to the power supply. The first terminal of the first variable capacitor is connected to the second terminal of the first inductor, the second terminal of the first variable capacitor is connected to the first terminal of the second variable capacitor, and the connection point is connected to the control voltage; the second terminal of the second variable capacitor is connected to the second terminal of the second inductor.

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