Wafer precision heating system and control method
By using a silicon carbide-coated thermally conductive film and a multi-zone heating module combined with a micro heating control unit in the wafer heating system, the problems of temperature non-uniformity and thermal stress in the wafer heating system are solved, achieving more uniform and precise heating control.
Patent Information
- Application Number
- CN202510866258.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-26
- Publication Date
- 2025-10-17
AI Technical Summary
Existing wafer heating systems suffer from problems such as uneven thermal conductive coating, poor temperature consistency, uneven heating, high risk of lattice damage and fragmentation due to thermal stress, and insufficient temperature measurement accuracy, making it difficult to achieve accurate temperature change monitoring and control.
A silicon carbide-coated thermally conductive film is applied to the inner layer of the mounting groove and the surface of the heater. Combined with a multi-zone heating module and a micro heating control unit, zoned heating is achieved through finite element thermal field simulation optimization, which avoids heating unevenness and enhances temperature uniformity and control accuracy.
This achieves more uniform heating within the wafer surface, improves temperature consistency and heating process stability, reduces the risk of thermal stress damage, and enhances temperature measurement accuracy and temperature change monitoring precision.
Smart Images
Figure CN120812784A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of energy-saving and environment-friendly intelligent control for semiconductor precision machining, and more particularly to a wafer precision heating system and a control method. BACKGROUND
[0002] At present, with the improvement of wafer processing technology and digitalization and intelligentization, the precision requirement of wafer heating systems is higher and higher, and the wafer precision heating system is crucial in semiconductor processes. The existing wafer heating system still has the following technical problems, including how to prepare a more uniform heat-conducting coating, how to set the heat-conducting coating to enhance the overall temperature consistency, how to control the temperature balance of each region for enhanced heating, and how to adjust the uniform and smooth heating process. The problems such as temperature uniformity of wafer surface at nanoscale, edge effect heat loss, heat conduction of heating element, and heat absorption difference of heating body still need to be solved. The problems such as abnormal hot spots or cold spots caused by aging of the heater or uneven power distribution still need to be solved. The temperature rising and falling process can cause significant thermal stress in the wafer, which can easily cause lattice damage, slip dislocation or irreversible warping for large-size or ultra-thin wafers, increase the risk of fragments and damage the device performance. The temperature measurement process is easily affected by factors such as detection accuracy, thickness difference of the heating target, and environmental radiation interference, resulting in real temperature feedback deviation. How to realize ultra-fast temperature change precise monitoring, tracking, feedback, and stability precision is still a problem to be solved. Therefore, it is necessary to propose a wafer precision heating system and a control method to at least partially solve the problems in the prior art. SUMMARY
[0003] A series of simplified concepts are introduced in the summary section, which will be further described in detail in the specific embodiment section. The summary section of the present application does not mean to attempt to limit the key features and necessary technical features of the claimed technical solution, and even less to determine the protection scope of the claimed technical solution.
[0004] To at least partially solve the above problems, the present application provides a wafer precision heating system, comprising:
[0005] A silicon carbide coating heat conduction sub-system prepares a silicon carbide coating heat conduction film, and the silicon carbide coating heat conduction film is arranged in the inner layer of the installation groove.
[0006] A surface bonding coating heat conduction sub-system is arranged at the contact part between the heater cover and the heater surface and the heater surface, and a silicon carbide coating heat conduction film is arranged at the contact part between the heater cover and the heater surface and the heater surface.
[0007] A multi-zone heating segmented conduction sub-system is provided with a multi-zone heating module to heat the central region of the heating disc, and a plurality of electric heating wire heating segments are arranged outward in sequence.
[0008] Integrated micro-heating control subsystem, by integrating multiple micro-heating integrated control units, intelligent control of partition heating is carried out, and more uniform in-wafer heating is realized.
[0009] Preferably, the silicon carbide coating heat conduction subsystem comprises:
[0010] The silicon carbide coating nanometer preparation subsystem prepares the silicon carbide coating heat conduction film through growth of a silicon carbide nanometer array.
[0011] The mounting groove silicon carbide coating subsystem sets the silicon carbide coating heat conduction film in the inner layer of the mounting groove, one side of the silicon carbide coating heat conduction film is attached to the surface of the heater, and the other side is attached to the inner wall of the mounting groove.
[0012] Preferably, the surface bonding coating heat conduction subsystem comprises:
[0013] The cover bonding heat conduction strengthening subsystem sets the silicon carbide coating heat conduction film at the contact part between the heater cover and the surface of the heater.
[0014] The surface heat conduction layer increasing subsystem applies the silicon carbide coating heat conduction film to the surface of the heater; and the silicon carbide coating heat conduction film on the surface of the heater is attached through pressure on the symmetry plane.
[0015] Preferably, the multi-zone heating segmented conduction subsystem comprises:
[0016] The multi-zone heating segmented subsystem sets a multi-zone heating module to divide the heating disc into multiple zones; multiple segmental heating wire heating segments are set in the multiple zones; the length of each segmental heating wire heating segment is equal; the segmental heating wire segment at the center of the heating disc is set as an S-shaped heating wire; the midpoint of the S-shaped heating wire is located at the center of the heating layer position in the heating disc; the heating wire is spirally laid from the inside to the outside in a double helix ring around the center of the heating layer position to the endpoints of the segmental heating wire heating segments at both ends;
[0017] The inter-segment insulation subsystem sets an inter-segment insulation layer at the endpoints of the segmental heating wire heating segments at both ends; the inter-segment insulation layer separates adjacent segmental heating wire heating segments; the inter-segment insulation layer is set to comprise high-temperature-resistant heat-conducting ceramic sheets.
[0018] The outer layer segmented heating subsystem sets adjacent segmental heating wire heating segments of the segmental heating wire segment at the center of the heating disc, and sets multiple segmental heating wire heating segments outward in turn.
[0019] Preferably, the integrated micro-heating control subsystem comprises:
[0020] The multi-micro-heating integrated subsystem integrates multiple micro-heating integrated control units to carry out intelligent control of partition heating.
[0021] The finite element thermal field optimization subsystem optimizes the integrated layout of the micro heating integrated control unit through finite element thermal field simulation, and realizes more uniform heating of a wafer in a plane.
[0022] The wafer precision heating control method comprises the following steps:
[0023] S1, a silicon carbide coating heat-conducting film is prepared, and the silicon carbide coating heat-conducting film is arranged on the inner layer of the mounting groove;
[0024] S2, the silicon carbide coating heat-conducting film is arranged on the contact part between the heater cover and the heater surface and the heater surface;
[0025] S3, a multi-zone heating module is arranged to heat the central region of the heating disc, and a plurality of electric heating wire heating sections are sequentially arranged outward;
[0026] S4, a plurality of micro heating integrated control units are integrated to perform intelligent control of partition heating, so that the wafer is more uniformly heated in the plane.
[0027] Preferably, S1 comprises the following steps:
[0028] S11, the silicon carbide coating heat-conducting film is prepared through silicon carbide nanometer array growth;
[0029] S12, the silicon carbide coating heat-conducting film is arranged on the inner layer of the mounting groove, one side of the silicon carbide coating heat-conducting film is attached to the surface of the heater, and the other side is attached to the inner wall of the mounting groove.
[0030] Preferably, S2 comprises the following steps:
[0031] S21, the silicon carbide coating heat-conducting film is arranged on the contact part between the heater cover and the heater surface;
[0032] S22, the silicon carbide coating heat-conducting film is coated on the heater surface, and the silicon carbide coating heat-conducting film on the heater surface is attached through pressure on the symmetry plane.
[0033] Preferably, S3 comprises the following steps:
[0034] S31, a multi-zone heating module is arranged to divide the heating disc into a plurality of regions; a plurality of electric heating wire heating sections are arranged in the plurality of regions; the length of each electric heating wire heating section is equal; in the central region of the heating disc, the electric heating wire section at the center of the heating disc is arranged in an S-shaped electric heating wire; the midpoint of the S-shaped electric heating wire is located at the center of the heating layer position in the heating disc, and the electric heating wire is spirally laid from the inside to the outside layer by layer with the center of the heating layer position as the center, to the end points of the two ends of the electric heating wire heating section;
[0035] S32, an inter-section insulation layer is arranged at the end points of the two ends of the electric heating wire heating section; the inter-section insulation layer separates adjacent electric heating wire heating sections; the inter-section insulation layer is arranged to include high-temperature-resistant heat-conducting ceramic sheets;
[0036] S33, setting the heating disc center electric heating wire segment adjacent segment electric heating wire heating section, sequentially setting multiple electric heating wire heating sections outward respectively.
[0037] Preferably, S4 comprises:
[0038] S41, by integrating multiple micro-heating integrated control units, performing partition heating intelligent control;
[0039] S42, by finite element thermal field simulation optimizing micro-heating integrated control unit integrated layout, realizing more uniform heating in wafer surface.
[0040] Compared with the prior art, the present application at least includes the following beneficial effects:
[0041] The present application provides a kind of wafer precision heating system and control method, by silicon carbide coating heat conduction sub-system, preparation silicon carbide coating heat conduction film, in the inner layer of mounting groove sets silicon carbide coating heat conduction film;Surface bonding coating heat conduction sub-system, in the contact part of heater cover and heater surface and heater surface, respectively sets silicon carbide coating heat conduction film;Multi-zone heating subsection conduction sub-system, sets multiple heating module, to heat disc center area, sequentially setting multiple electric heating wire heating sections outward respectively;Integrated micro-heating control sub-system, by integrating multiple micro-heating integrated control units, carries out partition heating intelligent control, realizes more uniform heating in wafer surface;In the inner layer of mounting groove sets silicon carbide coating heat conduction film, silicon carbide coating heat conduction film one side is bonded with heater surface, the other side is bonded with mounting groove inner wall;Heater cover and the contact part of heater surface set silicon carbide coating heat conduction film;Heater surface is coated with silicon carbide coating;Set multiple heating module, avoid the uneven heating caused by the length of heater heating wire too long;By integrating multiple micro-heating integrated control units, partition heating control;By finite element thermal field simulation optimizing micro-heating integrated control unit integrated layout, realizes uniform heating in wafer surface high efficiency precision;It has great significance and remarkable effect.
[0042] The wafer precision heating system and control method of the application, other advantages, objects and features of the application will be partly embodied by the following description, and some will be understood by the skilled in the art through the study and practice of the application. BRIEF DESCRIPTION OF DRAWINGS
[0043] The accompanying drawings are included to provide a further understanding of the application, and constitute a part of the specification, together with the embodiments of the application, for explaining the application, and do not constitute a limitation on the application.In the drawings:
[0044] Figure 1 It is an embodiment of the wafer precision heating system described in the application.
[0045] Figure 2Another embodiment diagram of the multi-zone heating of the wafer precision heating system according to the present application.
[0046] Figure 3 Another embodiment diagram of the coating heat conduction of the wafer precision heating system according to the present application. DETAILED DESCRIPTION
[0047] The present application will be further described in detail below with reference to the accompanying drawings and embodiments, so that those skilled in the art can implement the present application according to the description; as shown in the drawings, the present application provides a wafer precision heating system, comprising: Figures 1-3
[0048] The silicon carbide coating heat conduction sub-system prepares a silicon carbide coating heat conduction film, and sets the silicon carbide coating heat conduction film in the inner layer of the installation groove;
[0049] The surface bonding coating heat conduction sub-system sets the silicon carbide coating heat conduction film at the contact part of the heater cover and the heater surface and the heater surface, respectively;
[0050] The multi-zone heating segmented conduction sub-system sets a multi-zone heating module to heat the central area of the heating disc, and sets a plurality of segmented heating wire heating segments outward in sequence, respectively;
[0051] The integrated micro-heating control sub-system performs intelligent control of partition heating by integrating a plurality of micro-heating integrated control units, so as to realize more uniform heating of the wafer surface.
[0052] The principle and effect of the above technical solution are as follows: the silicon carbide coating heat conduction sub-system prepares a silicon carbide coating heat conduction film, and sets the silicon carbide coating heat conduction film in the inner layer of the installation groove; the surface bonding coating heat conduction sub-system sets the silicon carbide coating heat conduction film at the contact part of the heater cover and the heater surface and the heater surface, respectively; the multi-zone heating segmented conduction sub-system sets a multi-zone heating module to heat the central area of the heating disc, and sets a plurality of segmented heating wire heating segments outward in sequence, respectively; the integrated micro-heating control sub-system performs intelligent control of partition heating by integrating a plurality of micro-heating integrated control units, so as to realize more uniform heating of the wafer surface; the silicon carbide coating heat conduction film is set in the inner layer of the installation groove, one side of the silicon carbide coating heat conduction film is bonded to the surface of the heater, and the other side is bonded to the inner wall of the installation groove; the silicon carbide coating heat conduction film is set at the contact part of the heater cover and the heater surface; the heater surface is coated with a silicon carbide coating; the multi-zone heating module is set to avoid uneven heating caused by the excessive length of the heater heating wire; the partition heating control is performed by integrating a plurality of micro-heating integrated control units; the integrated layout of the micro-heating integrated control units is optimized by finite element thermal field simulation, so as to realize uniform and efficient and precise heating of the wafer surface; and the present application has great significance and remarkable effects.
[0053] In one embodiment, preferably, the silicon carbide coating heat conduction sub-system comprises:
[0054] Silicon carbide coating nano-preparation subsystem, which prepares silicon carbide coating thermal conductive film by growing silicon carbide nano-arrays;
[0055] The mounting groove silicon carbide coating subsystem is provided with a silicon carbide coating thermal conductive film on the inner layer of the mounting groove, with one side of the silicon carbide coating thermal conductive film being in contact with the surface of the heater and the other side being in contact with the inner wall of the mounting groove.
[0056] The principle and effect of the above technical solution are as follows: Figure 3 As shown, the silicon carbide coating heat conductive subsystem includes: a silicon carbide coating nano-preparation subsystem, which prepares a silicon carbide coating heat conductive film by growing a silicon carbide nano-array; a mounting groove silicon carbide coating subsystem, which sets a silicon carbide coating heat conductive film 101 in the inner layer of the mounting groove, and the silicon carbide coating heat conductive film is attached to the surface of the heater 102 on one side and to the inner wall of the mounting groove 103 on the other side; the mounting gap is filled with a high-temperature resistant heat conductive fluorphlogopite filling material; the preparation of the silicon carbide coating heat conductive film includes: using a high-purity atmosphere resistance furnace to grow a silicon carbide nano-array to prepare the silicon carbide coating heat conductive film; in the high-purity atmosphere resistance furnace, the heat conductive film A first-side silicon carbide nanoarray is grown on the first side of the substrate to obtain a first-side silicon carbide nanoarray thermal conductive film; after completion, a second-side silicon carbide nanoarray is grown on the second side of the thermal conductive film substrate to obtain a second-side silicon carbide nanoarray thermal conductive film; silicon carbide nanoarrays are grown on the first-side silicon carbide nanoarray thermal conductive film again to obtain a first-side regrown silicon carbide nanoarray thermal conductive film; silicon carbide nanoarrays are grown on the second-side silicon carbide nanoarray thermal conductive film again to obtain a second-side regrown silicon carbide nanoarray thermal conductive film; after multiple growths on both sides, a silicon carbide coating thermal conductive film is obtained; and the thermal conductivity uniformity is significantly improved.
[0057] In one embodiment, a surface bonding coating thermal conductive subsystem comprises:
[0058] The cover is combined with a heat conduction strengthening subsystem, and a silicon carbide coating heat conductive film is set at the contact point between the heater cover and the heater surface;
[0059] The surface heat conduction layer adding subsystem coats the silicon carbide coating heat conduction film on the heater surface; the silicon carbide coating heat conduction film on the heater surface is pressed and attached through the symmetrical surface.
[0060] The principle and effect of the above technical solution are: the surface combined coating heat conduction subsystem includes: a cover combined heat conduction strengthening subsystem, a silicon carbide coating heat conduction film is arranged at the contact part of the heater cover 211 and the heater surface; the contact part of the heater cover and the heater surface is arranged to be mutually attached to the surface of the heater; a surface heat conduction layer subsystem, a silicon carbide coating heat conduction film is coated on the surface of the heater; the silicon carbide coating heat conduction film on the surface of the heater is attached by symmetric face pressing; the symmetric face pressing includes: each half face attachment surface is arranged in the symmetric direction of the heater contour; the silicon carbide coating heat conduction film is wound on the surface of the heater, the symmetric half face attachment surfaces are used to press the winding part of the silicon carbide coating heat conduction film towards each other, and the silicon carbide coating heat conduction film is attached to the surface of the heater by pressing, and the bubbles and attachment gaps are squeezed out, the symmetric face pressing is carried out, and the silicon carbide coating heat conduction film is coated on the surface of the heater; the heating process enhances the overall heat distribution uniformity of the heat dissipation block.
[0061] In one embodiment, the multi-zone heating segmented conduction subsystem includes:
[0062] The multi-zone heating segmented subsystem sets up a multi-zone heating module to divide the heating disc into multiple zones; multiple segmental heating wires are arranged in the multiple zones; the length of each segmental heating wire is equal;
[0063] The inter-segment insulation subsystem sets up an inter-segment insulation layer at the end of each segmental heating wire; the inter-segment insulation layer separates adjacent segmental heating wires; the inter-segment insulation layer includes high-temperature-resistant heat-conducting ceramic sheets;
[0064] The outer layer segmented heating subsystem sets up adjacent segmental heating wires at the center of the heating disc, and multiple segmental heating wires are arranged outward in sequence; this avoids the uneven heating caused by the excessive length of the heating wires.
[0065] The principle and effect of the above technical solution are: as Figure 2As shown, the multi-zone heating segmented conduction subsystem includes: a multi-zone heating segmented subsystem, a multi-zone heating module 311 is arranged to divide the heating disc into multiple zones 312; a plurality of heating segments 313 are arranged in the multiple zones; each heating segment has an equal length; an inter-segment insulation layer 321 is arranged at the end of each heating segment; the inter-segment insulation layer separates adjacent heating segments; the inter-segment insulation layer is made of high-temperature-resistant and heat-conductive ceramic sheet; in the central region of the heating disc, the heating segment at the center of the heating disc is arranged in an S-shaped heating wire 3131; the midpoint of the S-shaped heating wire is located at the center of the heating layer position in the heating disc; the S-shaped heating wire is arranged in a double helix annular shape from the inside to the outside layer by layer, with the center of the heating layer position as the center, until the end of the heating segment; the double helix annular shape includes a double-arm Archimedes spiral, the helical spacing gradually decreases from the inside to the outside layer, and the tightness of the spiral ring arrangement increases layer by layer; an inter-segment insulation subsystem is arranged at the end of each heating segment; the inter-segment insulation layer separates adjacent heating segments; the inter-segment insulation layer is made of high-temperature-resistant and heat-conductive ceramic insulation sheet; the preparation of the high-temperature-resistant and heat-conductive ceramic insulation sheet includes: mixing boron nitride nanospheres and metal chloride and stirring for a preset first time; the preset first time includes: 1 hour-4 hours; boron nitride metal chloride mixed powder is obtained; under a high-purity nitrogen protective atmosphere, the boron nitride metal chloride mixed powder is heated to a preset first temperature at a set heating rate; the preset first temperature includes: 800℃-1450℃; during the heating process, intelligent control is performed for heat loss compensation, and the heating target temperature is detected by infrared detection; according to the infrared detection heating target temperature, the heat loss error between the heating target temperature and the preset first temperature is obtained; the heating temperature is controlled according to the heat loss error to compensate for the heat loss error; the set heating rate includes: 15℃ / min-35℃ / min; then the temperature is maintained for 3-10 hours for heat treatment; then the temperature is lowered to room temperature under a high-purity nitrogen protective atmosphere, and the high-purity hexagonal boron nitride nanosheet is formed by cleaning with a high-purity cleaning solution; the high-purity hexagonal boron nitride nanosheet is modified by an amino group; β-Al2O3 is modified by an epoxy group to obtain a β-Al2O3 core layer, which is arranged in; the amino-modified high-purity hexagonal boron nitride nanosheet is attached to the β-Al2O3 core layer, and the hexagonal boron nitride nanosheet is self-assembled on the outer layer of the β-Al2O3 to form a high-temperature-resistant and heat-conductive ceramic insulation sheet, thereby obtaining the inter-segment insulation layer; mutual insulation improves safety, and uniform heat conduction is achieved to avoid the formation of heat conduction discontinuous low-temperature points; epoxy modification includes β-Si3N4 and Al2O3 modification; an outer segment heating subsystem is arranged to arrange adjacent heating segments at the center of the heating disc, and a plurality of heating segments are arranged outward in turn; in the heat dissipation part of the edge region of the heating disc, the density of the heating wire arrangement is greater than that in the internal region of the heating disc; a plurality of arc heating wires 3133 are arranged along the outermost edge of the wafer in the edge region to compensate for heat loss in the edge region.The heating disc center and the middle region of the edge are provided with a plurality of arc-shaped heating wires for heat compensation, which can compensate for local heat imbalance in the middle region; avoid uneven heating caused by the length of the heating wire; and reduce heat attenuation or uneven heat concentration of the heat conduction wire.
[0066] In one embodiment, the integrated micro-heating control subsystem includes:
[0067] The multi-micro-heating integrated subsystem controls the heating of different zones intelligently by integrating multiple micro-heating integrated control units.
[0068] The finite element thermal field optimization subsystem optimizes the integrated layout of the micro-heating integrated control units through finite element thermal field simulation to achieve more uniform heating of the wafer surface.
[0069] The principle and effect of the above technical solution are as follows: The integrated micro-heating control subsystem includes: a multi-micro-heating integrated subsystem that controls the heating of different zones intelligently by integrating multiple micro-heating integrated control units; and a finite element thermal field optimization subsystem that optimizes the integrated layout of the micro-heating integrated control units through finite element thermal field simulation to achieve more uniform heating of the wafer surface. The micro-heating integrated control unit includes: a micro-heating integrated group, a heating zone thermosensitive sheet, a zone-heating balance group, and a balance-heating intelligent control group. The micro-heating integrated group is arranged as multiple groups of staggered and stacked silicon carbide coating layers. The thickness of the multiple groups of staggered and stacked silicon carbide coating layers increases near the heat source stacking area, and the thermal conductivity is higher. The thickness gradually decreases away from the heat source stacking area, forming a heat conduction zoning balance. The thermal conductivity is more balanced. The heating temperature is concentrated in the heat source area, and the heating is not balanced. The heating zone thermosensitive sheet is used for detecting the temperature of each heating zone. The balance-heating intelligent control group controls the zone-heating balance group to adjust the heating power of the temperature-exceeding heating zone according to the temperature of each heating zone, further achieving uniform heating of each zone.
[0070] The present application provides a wafer precision heating control method, comprising:
[0071] S1, preparing a silicon carbide coating heat conduction film, and arranging the silicon carbide coating heat conduction film in the inner layer of the mounting groove;
[0072] S2, arranging the silicon carbide coating heat conduction film on the contact part between the heater cover and the heater surface and the heater surface, respectively;
[0073] S3, arranging a multi-zone heating module to heat the center area of the heating disc, and sequentially arranging multiple electric heating wire heating sections outward;
[0074] S4, controlling the heating of different zones intelligently by integrating multiple micro-heating integrated control units to achieve more uniform heating of the wafer surface.
[0075] The principle and effect of the above technical solution are: a silicon carbide coating heat-conducting film is prepared, a silicon carbide coating heat-conducting film is arranged on the inner layer of the installation groove; a silicon carbide coating heat-conducting film is arranged on the contact part of the heater cover and the heater surface and the surface of the heater; a multi-zone heating module is arranged to heat the central area of the heating disc, and a plurality of heating wire heating sections are arranged outward in sequence; a plurality of micro heating integrated control units are integrated to perform intelligent control of partition heating, so that the wafer is more uniformly heated in the plane; the silicon carbide coating heat-conducting film is arranged on the inner layer of the installation groove, one side of the silicon carbide coating heat-conducting film is attached to the surface of the heater, and the other side is attached to the inner wall of the installation groove; the silicon carbide coating heat-conducting film is arranged on the contact part of the heater cover and the heater surface; the surface of the heater is coated with a silicon carbide coating; the multi-zone heating module is arranged to avoid uneven heating caused by the length of the heater heating wire being too long; the plurality of micro heating integrated control units are integrated to control the partition heating; the integrated layout of the micro heating integrated control unit is optimized through finite element thermal field simulation, so that the wafer is uniformly and efficiently heated in the plane; and the method has great significance and remarkable effect.
[0076] In one embodiment, S1 comprises:
[0077] S11, preparing a silicon carbide coating heat-conducting film through silicon carbide nano array growth;
[0078] S12, arranging a silicon carbide coating heat-conducting film on the inner layer of the installation groove, one side of the silicon carbide coating heat-conducting film being attached to the surface of the heater, and the other side being attached to the inner wall of the installation groove.
[0079] The principle and effect of the above technical solution are: as shown in Figure 3 The silicon carbide coating heat-conducting film is prepared through silicon carbide nano array growth; the silicon carbide coating heat-conducting film 101 is arranged on the inner layer of the installation groove 103, one side of the silicon carbide coating heat-conducting film being attached to the surface of the heater 102, and the other side being attached to the inner wall of the installation groove 103; a high-temperature-resistant heat-conducting fluorophlogopite filling material is filled in the installation gap; the preparation of the silicon carbide coating heat-conducting film comprises: the silicon carbide coating heat-conducting film is prepared through silicon carbide nano array growth by using a high-purity atmosphere resistance furnace; in the high-purity atmosphere resistance furnace, the first side of the heat-conducting film base is subjected to first side silicon carbide nano array growth to obtain a first side silicon carbide nano array heat-conducting film; after completion, the second side of the heat-conducting film base is subjected to second side silicon carbide nano array growth to obtain a second side silicon carbide nano array heat-conducting film; the first side silicon carbide nano array heat-conducting film is subjected to silicon carbide nano array growth again to obtain a first side regrown silicon carbide nano array heat-conducting film; the second side silicon carbide nano array heat-conducting film is subjected to silicon carbide nano array growth again to obtain a second side regrown silicon carbide nano array heat-conducting film; the silicon carbide coating heat-conducting film is obtained through double-sided multiple growth; and the heat-conducting uniformity is significantly improved.
[0080] In one embodiment, S2 comprises:
[0081] S21, setting a silicon carbide coating heat-conducting film at the contact part between the heater cover and the heater surface;
[0082] S22, coating a silicon carbide coating heat-conducting film on the heater surface; the silicon carbide coating heat-conducting film on the heater surface is attached by pressure on the symmetric surface; the heating process enhances the overall thermal distribution uniformity of the heat-dissipating block.
[0083] The principle and effect of the above technical solution are as follows: a silicon carbide coating heat-conducting film is set at the contact part between the heater cover 211 and the heater surface; the contact part between the heater cover and the heater surface is set as a mutual attaching surface with the heater surface; a silicon carbide coating heat-conducting film is coated on the heater surface; the silicon carbide coating heat-conducting film on the heater surface is attached by pressure on the symmetric surface; the symmetric surface pressure attachment includes: setting a half-attaching surface in each of the symmetric directions of the heater contour; winding the silicon carbide coating heat-conducting film on the heater surface, and attaching the winding part of the silicon carbide coating heat-conducting film to the heater surface by pressure on the symmetric half-attaching surfaces, and extruding the bubbles and attachment gaps, to perform the symmetric surface pressure attachment, and coat the silicon carbide coating heat-conducting film on the heater surface; the heating process enhances the overall thermal distribution uniformity of the heat-dissipating block.
[0084] In one embodiment, S3 includes:
[0085] S31, setting a multi-zone heating module, and dividing the heating disc into multiple zones; multiple electric heating wire heating sections are set in the multiple zones; the length of each electric heating wire heating section is equal;
[0086] S32, setting an inter-section insulation layer at the end of each electric heating wire heating section; the inter-section insulation layer separates the adjacent electric heating wire heating sections; the inter-section insulation layer is made of high-temperature-resistant heat-conducting ceramic sheet;
[0087] S33, setting adjacent electric heating wire heating sections at the center of the heating disc, and sequentially setting multiple electric heating wire heating sections outward; this avoids the uneven heating caused by the excessive length of the heating wire of the heater.
[0088] The principle and effect of the above technical solution are as follows: as Figure 2As shown, the multi-zone heating module 311 is arranged to divide the heating disc into multiple regions 312; multiple electric heating wire heating sections 313 are arranged in the multiple regions; each electric heating wire heating section has equal length; an inter-section insulation layer 321 is arranged at the end of each electric heating wire heating section; the inter-section insulation layer separates adjacent electric heating wire heating sections; the inter-section insulation layer is made of high-temperature-resistant and heat-conductive ceramic sheet; adjacent electric heating wire heating sections are arranged at the center of the heating disc; multiple electric heating wire heating sections are arranged outward in sequence; this arrangement avoids uneven heating caused by too long heating wire; in the central region of the heating disc, the electric heating wire section at the center of the heating disc is arranged in S-shaped electric heating wire 3131; the midpoint of the S-shaped electric heating wire is located at the center of the heating layer position in the heating disc; the S-shaped electric heating wire 3132 is arranged in double helix annular layer by layer from inside to outside with the center of the heating layer position as the center; the double helix annular layer is made of double-arm Archimedes helix; the helix spacing gradually decreases layer by layer from inside to outside; the helix annular arrangement is increasingly dense layer by layer; an inter-section insulation layer is arranged at the end of each electric heating wire heating section; the inter-section insulation layer separates adjacent electric heating wire heating sections; the inter-section insulation layer is made of high-temperature-resistant and heat-conductive ceramic sheet; the preparation of the high-temperature-resistant and heat-conductive ceramic insulation sheet includes: mixing boron nitride nanospheres and metal chloride and stirring for a preset first time; the preset first time includes: 1 hour-4 hours; boron nitride metal chloride mixed powder is obtained; under high-purity nitrogen protection atmosphere, the boron nitride metal chloride mixed powder is heated to a preset first temperature at a set heating rate; the preset first temperature includes: 800℃-1450℃; the heating process is controlled by intelligent heat loss compensation; the heating target temperature is detected by infrared detection; according to the infrared detection heating target temperature, the heat loss error between the heating target temperature and the preset first temperature is obtained; the heating temperature is controlled according to the heat loss error to compensate for the heat loss error; the set heating rate includes: 15℃ / min-35℃ / min; then heat treatment is performed by keeping the temperature for 3-10 hours; then the temperature is lowered to room temperature under high-purity nitrogen protection atmosphere; the high-purity hexagonal boron nitride nanosheet is formed by cleaning with high-purity cleaning solution; the high-purity hexagonal boron nitride nanosheet is modified by amino group; β-Al2O3 is modified by epoxy group to obtain a β-Al2O3 core layer; the β-Al2O3 core layer is arranged at; the amino-modified high-purity hexagonal boron nitride nanosheet is attached to the β-Al2O3 core layer; the hexagonal boron nitride nanosheet is self-assembled on the outer layer of β-Al2O3 to form a high-temperature-resistant and heat-conductive ceramic insulation sheet to obtain an inter-section insulation layer; mutual insulation improves safety and ensures uniform heat conduction to avoid the formation of heat conduction discontinuous low temperature points; the epoxy modification includes β-Si3N4 and Al2O3 modification; adjacent electric heating wire heating sections are arranged at the center of the heating disc; multiple electric heating wire heating sections are arranged outward in sequence; in the heat dissipation part of the edge region of the heating disc, the electric heating wire arrangement density is greater than that in the internal region of the heating disc; multiple arc-shaped heating wires 3133 are arranged along the outermost edge of the wafer in the edge region to compensate for heat dissipation;The heating disc center and the middle region of the edge are provided with a plurality of arc-shaped heating wires for heat compensation, which can compensate for local heat imbalance in the middle region; avoid uneven heating caused by the length of the heating wires; and reduce heat attenuation or non-uniform heat concentration of the heat-conducting wires.
[0089] In one embodiment, S4 comprises:
[0090] S41, by integrating a plurality of micro-heating integrated control units, intelligent control of partition heating is performed.
[0091] S42, by finite element thermal field simulation, the integrated layout of the micro-heating integrated control unit is optimized, and more uniform heating in the wafer plane is realized.
[0092] The principle and effect of the above technical solution are: by integrating a plurality of micro-heating integrated control units, intelligent control of partition heating is performed; by finite element thermal field simulation, the integrated layout of the micro-heating integrated control unit is optimized, and more uniform heating in the wafer plane is realized; the micro-heating integrated control unit comprises: a micro-heating integrated group, a heating zone thermosensitive sheet, a partition heating balance group, and a balance heating intelligent control group; the micro-heating integrated group is arranged as a plurality of groups of staggered and stacked silicon carbide coating layers; the plurality of groups of staggered and stacked silicon carbide coating layers increase in thickness near the heat source layer stack area and have higher thermal conductivity; the plurality of groups of staggered and stacked silicon carbide coating layers gradually decrease in thickness away from the heat source layer stack area and have more balanced thermal conductivity; heat source area heating temperature concentration and uneven heating are avoided; heat conduction partition balance is formed; the heating zone thermosensitive sheet is used for partition detection of the temperature of each heating zone; the balance heating intelligent control group controls the partition heating balance group to adjust the heating power of the temperature out-of-tolerance heating zone according to the temperature of each heating zone, and further achieves uniform and balanced heating of each partition.
[0093] Although the embodiments of the present application have been disclosed as above, they are not limited to the application listed in the specification and the embodiments, and can be fully applied to various fields suitable for the present application, and additional modifications can be easily realized by those skilled in the art, and therefore the present application is not limited to specific details and the figures shown and described herein, without departing from the general concept defined by the claims and the equivalent scope.
Claims
1. A wafer precision heating system, characterized in that: include: Silicon carbide coating heat conduction subsystem, prepare silicon carbide coating heat conduction film, set silicon carbide coating heat conduction film in the inner layer of the installation groove; The surface combined coating heat conduction subsystem is equipped with a silicon carbide coating heat conduction film at the contact point between the heater cover and the heater surface and on the heater surface; Multi-zone heating segmented conduction subsystem, with multi-zone heating modules, with multiple heating wire heating segments arranged outwards from the center of the heating plate; The integrated micro-heating control subsystem integrates multiple micro-heating integrated control units to perform intelligent control of zoned heating, achieving more uniform heating within the wafer surface.
2. The wafer precision heating system according to claim 1, characterized in that: Silicon carbide coating thermal conductivity subsystem, including: Silicon carbide coating nano-preparation subsystem, which prepares silicon carbide coating thermal conductive film by growing silicon carbide nano-arrays; The mounting groove silicon carbide coating subsystem is provided with a silicon carbide coating thermal conductive film on the inner layer of the mounting groove, with one side of the silicon carbide coating thermal conductive film being in contact with the surface of the heater and the other side being in contact with the inner wall of the mounting groove.
3. The wafer precision heating system according to claim 1, characterized in that: Surface bonding coating thermal conductivity subsystem, including: The cover is combined with a heat conduction strengthening subsystem, and a silicon carbide coating heat conductive film is set at the contact point between the heater cover and the heater surface; The surface heat conduction layer adding subsystem coats the silicon carbide coating heat conduction film on the heater surface; the silicon carbide coating heat conduction film on the heater surface is pressed and attached through the symmetrical surface.
4. The wafer precision heating system according to claim 1, characterized in that: Multi-zone heating segmented conduction subsystem, including: The multi-zone heating segmentation subsystem is equipped with a multi-zone heating module to divide the heating plate into multiple zones. Multiple heating wire sections are set in each zone; each heating wire section is of equal length. The inter-segment insulation subsystem is provided with an inter-segment insulation layer at each end of the heating wire heating segment; the inter-segment insulation layer separates adjacent heating wire heating segments; the inter-segment insulation layer is provided with a high-temperature resistant heat-conductive ceramic sheet; The outer layer segmented heating subsystem is provided with adjacent segments of the heating wire segment at the center of the heating disk, and multiple segments of the heating wire heating segment are sequentially provided outwards.
5. The wafer precision heating system according to claim 1, characterized in that: Integrated micro heating control subsystem, including: Multi-micro heating integrated subsystem, which integrates multiple micro heating integrated control units to perform intelligent control of zoned heating; The finite element thermal field optimization subsystem optimizes the integrated layout of the micro-heating integrated control unit through finite element thermal field simulation to achieve more uniform heating within the wafer surface.
6. A wafer precision heating control method, characterized in that: include: S1, preparing a silicon carbide coating thermal conductive film, and placing the silicon carbide coating thermal conductive film on the inner layer of the installation groove; S2, setting a silicon carbide coating heat conductive film on the contact part between the heater cover and the heater surface and on the heater surface; S3, setting a multi-zone heating module, with multiple heating wire sections arranged outward from the center of the heating plate; S4 integrates multiple micro-heating integrated control units to perform intelligent control of zoned heating, achieving more uniform heating within the wafer surface.
7. The wafer precision heating control method according to claim 6, characterized in that: S1 includes: S11, preparation of silicon carbide coating thermal conductive film by growing silicon carbide nanoarrays; S12, disposing a silicon carbide coating heat conductive film on the inner layer of the installation groove, wherein one side of the silicon carbide coating heat conductive film adheres to the surface of the heater and the other side adheres to the inner wall of the installation groove.
8. The wafer precision heating control method according to claim 6, wherein S2 include: S21, providing a silicon carbide coating heat conductive film at a contact portion between the heater cover and the heater surface; S22, coating a silicon carbide coating thermal conductive film on the surface of the heater; The silicon carbide coating heat conductive film on the heater surface is pressed and attached through the symmetrical surface.
9. The wafer precision heating control method according to claim 6, wherein S3 include: S31, setting a multi-zone heating module to divide the heating plate into multiple zones; setting multiple heating wire sections in each zone; each heating wire section has the same length; S32, providing inter-segment insulation layers at both ends of the heating wire heating segment; the inter-segment insulation layers separate adjacent heating wire heating segments; the inter-segment insulation layers are provided with high-temperature resistant thermally conductive ceramic sheets; S33, setting adjacent heating wire heating segments at the center of the heating plate, and sequentially setting multiple heating wire heating segments outward.
10. The wafer precision heating control method according to claim 6, wherein S4 include: S41, by integrating multiple micro heating integrated control units, performs intelligent control of zoned heating; S42, optimizes the integrated layout of the micro-heating integrated control unit through finite element thermal field simulation to achieve more uniform heating within the wafer surface.