Semiconductor structure and manufacturing method thereof

Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, an assembly structure layer, a dielectric layer, an organic light emitting diode assembly, a light shielding layer and a via hole. The component structure layer is disposed on the substrate. The dielectric layer is disposed on the component structure layer. The organic light emitting diode assembly is disposed on the dielectric layer. The light shielding layer is arranged between the dielectric layer and the component structure layer, or arranged between the dielectric layer and the organic light emitting diode component, or arranged between the dielectric layer and the component structure layer and between the dielectric layer and the organic light emitting diode component. The via hole is arranged in the dielectric layer and the light shielding layer, and is electrically connected with the organic light emitting diode assembly and the assembly structure layer.

Description

TECHNICAL FIELD

[0001] The present application relates to a semiconductor structure, and particularly to a semiconductor structure with a light shielding layer disposed between an organic light-emitting diode (OLED) component and a substrate. BACKGROUND

[0002] In current semiconductor processes, a dielectric layer is formed on a component structure layer on a substrate before forming an organic light-emitting diode component on the dielectric layer. In addition, a conductive via is formed in the dielectric layer to electrically connect the organic light-emitting diode component and the component structure layer before forming the organic light-emitting diode component. For this structure, when light from the outside or light from the organic light-emitting diode component enters the component structure layer, it can affect the performance of the components in the component structure layer. SUMMARY

[0003] The present application is directed to a semiconductor structure and a method of manufacturing the same, in which a light shielding layer is formed between an organic light-emitting diode component and a substrate.

[0004] The semiconductor structure of the present application includes a substrate, a component structure layer, a dielectric layer, an organic light-emitting diode component, a light shielding layer, and a conductive via. The component structure layer is disposed on the substrate. The dielectric layer is disposed on the component structure layer. The organic light-emitting diode component is disposed on the dielectric layer. The light shielding layer is disposed between the dielectric layer and the component structure layer, or between the dielectric layer and the organic light-emitting diode component, or between the dielectric layer and the component structure layer and between the dielectric layer and the organic light-emitting diode component. The conductive via is disposed in the dielectric layer and the light shielding layer and electrically connected to the organic light-emitting diode component and the component structure layer.

[0005] In one embodiment of the semiconductor structure of the present application, the light shielding layer is in contact with the conductive via.

[0006] In one embodiment of the semiconductor structure of the present application, the light shielding layer is not in contact with the conductive via.

[0007] In one embodiment of the semiconductor structure of the present application, the material of the light shielding layer includes a nitrogen-containing compound or amorphous silicon.

[0008] In one embodiment of the semiconductor structure of the present application, the nitrogen-containing compound includes SiN, SiON, or SiCN.

[0009] In one embodiment of the semiconductor structure of the present application, the via is connected to a bottom electrode of the organic light emitting diode component.

[0010] In one embodiment of the semiconductor structure of the present application, the via is connected to a contact pad in the component structure layer.

[0011] The method of manufacturing a semiconductor structure of the present application comprises the following steps. A substrate is provided. A component structure layer is formed on the substrate. A dielectric layer is formed on the component structure layer. An organic light emitting diode component is formed on the dielectric layer. A light shielding layer is formed, wherein the light shielding layer is formed between the dielectric layer and the component structure layer, or between the dielectric layer and the organic light emitting diode component, or between the dielectric layer and the component structure layer and between the dielectric layer and the organic light emitting diode component. A via is formed in the dielectric layer and the light shielding layer, wherein the via is electrically connected to the organic light emitting diode component and the component structure layer.

[0012] In one embodiment of the method of manufacturing a semiconductor structure of the present application, the light shielding layer is in contact with the via.

[0013] In one embodiment of the method of manufacturing a semiconductor structure of the present application, the light shielding layer is not in contact with the via.

[0014] In one embodiment of the method of manufacturing a semiconductor structure of the present application, the material of the light shielding layer comprises a nitrogen-containing compound or amorphous silicon.

[0015] In one embodiment of the method of manufacturing a semiconductor structure of the present application, the nitrogen-containing compound comprises SiN, SiON or SiCN.

[0016] In one embodiment of the method of manufacturing a semiconductor structure of the present application, the via is connected to a bottom electrode of the organic light emitting diode component.

[0017] In one embodiment of the method of manufacturing a semiconductor structure of the present application, the via is connected to a contact pad in the component structure layer.

[0018] In one embodiment of the method of manufacturing a semiconductor structure of the present application, the light shielding layer is formed after the component structure layer is formed and before the dielectric layer is formed.

[0019] In one embodiment of the method of manufacturing a semiconductor structure of the present application, the via is formed after the dielectric layer is formed and before the organic light emitting diode component is formed, and the light shielding layer is formed after the dielectric layer is formed and before the via is formed.

[0020] Based on the above, in the semiconductor structure of the present embodiment, since the light shielding layer is arranged between the organic light emitting diode assembly and the assembly structure layer, the light from the outside or the light from the organic light emitting diode assembly can be effectively blocked from entering the assembly structure layer, so as to avoid the influence of the light on the performance of the assembly in the assembly structure layer. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figures 1A-1C A manufacturing process cross-sectional schematic view of a semiconductor structure of a first embodiment of the present application;

[0022] Figures 2A-2B A manufacturing process cross-sectional schematic view of a semiconductor structure of a second embodiment of the present application;

[0023] Figure 3 A cross-sectional schematic view of a semiconductor structure of a third embodiment of the present application;

[0024] Figure 4 A cross-sectional schematic view of a semiconductor structure of a fourth embodiment of the present application;

[0025] Figure 5 A cross-sectional schematic view of a semiconductor structure of a fifth embodiment of the present application. DETAILED DESCRIPTION

[0026] The embodiments are explained below with reference to the accompanying drawings. However, the embodiments provided are not intended to limit the scope of the present application, and the drawings are not drawn to scale. Identical components are identified by identical reference numerals throughout the description. The same components are explained using the same reference numerals in the following description.

[0027] The terms such as "comprise", "include", "have" and the like used herein are open-ended terms, that is, "comprising but not limited to".

[0028] When the terms "first", "second" and the like are used in this specification, these terms are used to distinguish one component from another, and do not limit the sequence or importance of the components. Thus, in some cases, a first component can be termed as a second component, and a second component can be termed as a first component, and this does not depart from the scope of the present application.

[0029] In addition, the directional terms mentioned herein, such as "upper", "lower", and the like, are used only to refer to the direction of the drawings, and are not intended to limit the present application. Thus, it should be understood that "upper" can be used interchangeably with "lower", and when a layer or film or the like component is placed "on" another component, the component can be placed directly on the other component, or there can be an intermediate component. On the other hand, when a component is said to be "directly" placed on another component, there is no intermediate component between the two.

[0030] Figures 1A-1CA manufacturing flow cross-sectional view of a semiconductor structure of a first embodiment of the present application.

[0031] First, referring to Figure 1A , a substrate 100 is provided. In the present embodiment, the substrate 100 can be a silicon substrate, but the present application is not limited thereto. Then, a component structure layer 102 is formed on the substrate 100. The component structure layer 102 can include various semiconductor components generally known. For example, the component structure layer 102 can include transistors formed at a surface of the substrate 100, interconnect structures electrically connected with the transistors, and dielectric layers covering the transistors and the interconnect structures, but the present application is not limited thereto. Further, in the present embodiment, the component structure layer 102 includes a terminal pad 104 exposed at the surface. The terminal pad 104 can be electrically connected with the various semiconductor components described above, and can serve as a terminal for connection with external components. In other embodiments, the component structure layer 102 can not include the terminal pad 104, but include a wiring pattern exposed at the surface.

[0032] In Figure 1A , for the sake of clarity of the drawings, the various semiconductor components in the component structure layer 102 are not shown, and only the terminal pad 104 is shown. The detailed structure of the component structure layer 102 and the forming method are generally known to those skilled in the art, and are not described herein. Further, in Figure 1A , the number of the terminal pads 104 is only exemplary, and the present application is not limited thereto.

[0033] Next, referring to Figure 1B , a dielectric layer 106 is formed on the component structure layer 102. In the present embodiment, the dielectric layer 106 is a silicon oxide layer. The dielectric layer 106 serves as an inter-metal dielectric (IMD) layer in the semiconductor structure of the present embodiment. Then, a light shielding layer 108a is formed on the dielectric layer 106. In the present embodiment, the material of the light shielding layer 108a can be a nitrogen-containing compound or amorphous silicon. The nitrogen-containing compound described above is, for example, SiN, SiON, or SiCN. Further, in the present embodiment, the light shielding layer 108a is a single film layer, but the present application is not limited thereto. In other embodiments, the light shielding layer 108a can be a composite layer composed of different material layers.

[0034] Then, referring to Figure 1C , a via 110 connected with the terminal pad 104 is formed in the dielectric layer 106 and the light shielding layer 108a. In Figure 1CIn the present embodiment, the number of the via holes 110 is merely exemplary, and the present application is not limited thereto. In the present embodiment, the forming method of the via holes 110 can include the following steps. A via hole exposing the contact pad 104 is formed in the dielectric layer 106 and the light shielding layer 108a. Then, a conductive material is formed on the light shielding layer 108a and fills the via hole. After that, the conductive material outside the via hole is removed, and the conductive material in the via hole constitutes the via hole 110. Thus, in the present embodiment, the via hole 110 is exposed at the surface of the light shielding layer 108a, and the via hole 110 is in contact with the light shielding layer 108a.

[0035] After the via hole 110 is formed, the organic light emitting diode assembly 112 is formed on the light shielding layer 108a. The organic light emitting diode assembly 112 is connected with the via hole 110. In the present embodiment, the via hole 110 is connected with the bottom electrode (not shown) of the organic light emitting diode assembly 112, but the present application is not limited thereto. In this way, the semiconductor structure 10 of the present embodiment is formed.

[0036] In the semiconductor structure 10 of the present embodiment, the light shielding layer 108a is formed between the organic light emitting diode assembly 112 and the assembly structure layer 102, thus effectively blocking the light from the outside or the light from the organic light emitting diode assembly 112 into the assembly structure layer 102, so as to avoid the influence of the light on the performance of the components in the assembly structure layer 102.

[0037] In addition, in the present embodiment, after the dielectric layer 106 is formed, the light shielding layer 108a is directly formed on the dielectric layer 106, and after the light shielding layer 108a is formed, the organic light emitting diode assembly 112 is formed on the light shielding layer 108a. Thus, the process steps of the semiconductor structure 10 of the present embodiment are simple, and no additional photomask is needed.

[0038] In the semiconductor structure 10 of the first embodiment, the light shielding layer 108a is formed between the organic light emitting diode assembly 112 and the dielectric layer 106, but the present application is not limited thereto. In other embodiments, the light shielding layer 108a can be formed between the assembly structure layer 102 and the dielectric layer 106. This will be described in detail below.

[0039] Figures 2A-2B A manufacturing flow cross-sectional view of a semiconductor structure of a second embodiment of the present application is shown. In the present embodiment, the same components as those in the first embodiment will be denoted by the same reference numerals, and will not be described again.

[0040] First, referring to Figure 2A , a dielectric layer 106 is formed on the assembly structure layer 102. Then, a contact pad 104 is formed on the dielectric layer 106. After that, a light shielding layer 108a is formed on the dielectric layer 106 and the contact pad 104. Figure 1AAfter the above steps, a light shielding layer 108b is formed on the device structure layer 102. In this embodiment, the material of the light shielding layer 108b can be a nitrogen-containing compound or amorphous silicon. Examples of the nitrogen-containing compound are SiN, SiON, or SiCN. Furthermore, in this embodiment, the light shielding layer 108b is a single film layer, but the present invention is not limited to this. In other embodiments, the light shielding layer 108b can be a composite layer composed of layers of different materials. Subsequently, a dielectric layer 106 is formed on the light shielding layer 108b.

[0041] Then, please refer to Figure 2B A via 110 connected to the pad 104 is formed in the dielectric layer 106 and the light shielding layer 108b. An organic light emitting diode element 112 is then formed on the dielectric layer 106. The organic light emitting diode element 112 is connected to the via 110. In this way, the semiconductor structure 20 of this embodiment is formed.

[0042] In the semiconductor structure 20 of the present embodiment, the light shielding layer 108b is formed between the dielectric layer 106 and the device structure layer 102, thereby effectively blocking light from the outside or light from the organic light emitting diode device 112 from entering the device structure layer 102, thereby preventing the light from affecting the performance of the devices in the device structure layer 102.

[0043] Furthermore, in this embodiment, after forming the device structure layer 102, the light shielding layer 108b is directly formed on the device structure layer 102. Furthermore, after forming the light shielding layer 108b, the dielectric layer 106, the via 110, and the organic light emitting diode device 112 are formed. Therefore, the process steps of the semiconductor structure 20 of this embodiment are relatively simple, and no additional photomask is required.

[0044] In the first embodiment, the light shielding layer 108a is formed between the organic light emitting diode device 112 and the dielectric layer 106, while in the second embodiment, the light shielding layer 108b is formed between the dielectric layer 106 and the device structure layer 102. In other embodiments, depending on actual needs, both the light shielding layer 108a and the light shielding layer 108b can be formed.

[0045] Figure 3 FIG3 is a cross-sectional view of a semiconductor structure according to a third embodiment of the present invention. In this embodiment, the same components as those in the first and second embodiments are denoted by the same reference symbols and will not be further described.

[0046] Please refer to Figure 3 ,exist Figure 1A After the above steps, a light shielding layer 108b is formed on the component structure layer 102. In addition, after the dielectric layer 106 is formed, a light shielding layer 108a is formed on the dielectric layer 106.Figure 1C The step of forming a via 110 connected to the contact pad 104 and an organic light emitting diode assembly 112 connected to the via 110 in the dielectric layer 106, the light shielding layer 108a and the light shielding layer 108b is performed. In this way, the semiconductor structure 30 of the present embodiment is formed.

[0047] In the semiconductor structure 30 of the present embodiment, the light shielding layer 108a and the light shielding layer 108b are formed between the organic light emitting diode assembly 112 and the assembly structure layer 102. Therefore, the light from the outside or the light from the organic light emitting diode assembly 112 can be effectively blocked from entering the assembly structure layer 102, so as to avoid the influence of the light on the performance of the components in the assembly structure layer 102.

[0048] In addition, in the present embodiment, the light shielding layer 108b is formed on the assembly structure layer 102 after the formation of the assembly structure layer 102, and the light shielding layer 108a is formed on the dielectric layer 106 after the formation of the dielectric layer 106. Therefore, the process steps of the semiconductor structure 30 of the present embodiment are simple, and no additional photomask is needed.

[0049] In the above embodiments, the light shielding layer 108a and the light shielding layer 108b are in contact with the via 110, but the present application is not limited thereto. In other embodiments, the light shielding layer 108a and the light shielding layer 108b can not be in contact with the via 110 according to actual needs.

[0050] Figure 4 A cross-sectional view of a semiconductor structure of a fourth embodiment of the present application is shown. In the present embodiment, the components same as those of the first embodiment are denoted by the same reference numerals, and will not be described again.

[0051] Please refer to Figure 4 The semiconductor structure 40 of the present embodiment is different from the semiconductor structure 10 in that the light shielding layer 108a is not in contact with the via 110 in the semiconductor structure 40. In addition, a dielectric layer 114 is disposed between the light shielding layer 108a and the via 110. The material of the dielectric layer 114 can be the same as or different from that of the dielectric layer 106.

[0052] In the present embodiment, since the dielectric layer 114 is disposed between the light shielding layer 108a and the via 110, the material of the light shielding layer 108a can be a metal, such as Al or Ag, in addition to the nitrogen-containing compound or amorphous silicon. In the case where the material of the light shielding layer 108a is a metal, the light shielding layer 108a must not be in contact with the organic light emitting diode assembly 112, so as to avoid the electrical problem.

[0053] Figure 5FIG. 5 is a schematic cross-sectional view of a semiconductor structure according to a fifth embodiment of the present application. In this embodiment, components identical to those of the second embodiment will be denoted by identical reference numerals, and will not be described again.

[0054] Referring to FIG. 5, the semiconductor structure 50 according to the fifth embodiment of the present application comprises a substrate 100, a dielectric layer 106, a light shielding layer 108b, a via 110, a contact pad 104, and a semiconductor layer 102. Figure 5 The semiconductor structure 50 according to the fifth embodiment of the present application differs from the semiconductor structure 10 in that the light shielding layer 108b does not contact the via 110 in the semiconductor structure 50. In addition, the dielectric layer 106 can further be located between the light shielding layer 108b and the via 110.

[0055] In this embodiment, since the dielectric layer 106 is located between the light shielding layer 108b and the via 110, the material of the light shielding layer 108b can be a metal, such as Al or Ag, in addition to a nitrogen-containing compound or amorphous silicon. In the case where the material of the light shielding layer 108b is a metal, the light shielding layer 108b must not contact the contact pad 104, so as to avoid causing electrical problems.

[0056] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than limit the present application; although the present application has been described in detail with reference to the above embodiments, those ordinarily skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or equivalently replace some or all of the technical features; and these modifications or replacements do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A semiconductor structure, characterized in that include: substrate; A component structure layer is provided on the substrate; a dielectric layer, disposed on the component structure layer; an organic light emitting diode component, disposed on the dielectric layer; a light shielding layer, disposed between the dielectric layer and the component structure layer, or between the dielectric layer and the organic light emitting diode component, or between the dielectric layer and the component structure layer and between the dielectric layer and the organic light emitting diode component; as well as The conducting hole is disposed in the dielectric layer and the light shielding layer and is electrically connected to the organic light emitting diode component and the component structure layer.

2. The semiconductor structure according to claim 1, wherein: The light shielding layer is in contact with the via hole.

3. The semiconductor structure according to claim 1, wherein: The light shielding layer does not contact the via hole.

4. The semiconductor structure according to claim 1, wherein: The material of the light shielding layer includes nitrogen-containing compounds or amorphous silicon.

5. The semiconductor structure according to claim 4, wherein: The nitrogen-containing compound includes SiN, SiON or SiCN. The semiconductor structure according to claim 1 , wherein: The conductive hole is connected to the bottom electrode of the organic light emitting diode assembly.

7. The semiconductor structure according to claim 1, wherein: The vias are connected to pads in the component structure layer.

8. A method for manufacturing a semiconductor structure, characterized in that: include: providing a substrate; forming a component structure layer on the substrate; forming a dielectric layer on the component structure layer; forming an organic light emitting diode assembly on the dielectric layer; forming a light shielding layer, wherein the light shielding layer is formed between the dielectric layer and the component structure layer, or between the dielectric layer and the organic light emitting diode component, or between the dielectric layer and the component structure layer and between the dielectric layer and the organic light emitting diode component; as well as A via hole is formed in the dielectric layer and the light shielding layer, wherein the via hole is electrically connected to the organic light emitting diode component and the component structure layer.

9. The method for manufacturing a semiconductor structure according to claim 8, wherein: The light shielding layer is in contact with the via hole.

10. The method for manufacturing a semiconductor structure according to claim 8, wherein: The light shielding layer does not contact the via hole.

11. The method for manufacturing a semiconductor structure according to claim 8, wherein: The material of the light shielding layer includes nitrogen-containing compounds or amorphous silicon.

12. The method for manufacturing a semiconductor structure according to claim 11, wherein: The nitrogen-containing compound includes SiN, SiON or SiCN.

13. The method for manufacturing a semiconductor structure according to claim 8, wherein: The conductive hole is connected to the bottom electrode of the organic light emitting diode assembly.

14. The method for manufacturing a semiconductor structure according to claim 8, wherein: The vias are connected to pads in the component structure layer.

15. The method for manufacturing a semiconductor structure according to claim 8, wherein: The light shielding layer is formed after forming the component structure layer and before forming the dielectric layer.

16. The method for manufacturing a semiconductor structure according to claim 8, wherein: The via hole is formed after the dielectric layer is formed and before the organic light emitting diode component is formed, and the light shielding layer is formed after the dielectric layer is formed and before the via hole is formed.

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