Photoetching method for adaptively adjusting exposure dose based on photoresist thickness measurement

Abstract

The invention relates to semiconductor photoetching, in particular to an exposure dose self-adaptive adjustment photoetching method based on photoresist thickness measurement, which comprises the following steps of: additionally arranging a photoresist thickness measurement device on a photoetching machine, putting a mask raw material into the photoetching machine, and adjusting the incident light position of the photoresist thickness measurement device; carrying out glue thickness measurement on the photoetching area on the mask raw material through a glue thickness measurement device; estimating the glue thickness at each position in the photoetching area according to the glue thickness measurement result; calculating the exposure dose required by each position in the photoetching area according to the relationship between the photoresist thickness and the exposure dose; s3, performing photoetching on the mask raw material by the photoetching machine according to the exposure dose required by each position in the photoetching area, continuously performing photoresist thickness measurement on the next photoetching area on the mask raw material by the photoresist thickness measurement device while performing photoetching, and returning to S3 until the photoetching work of all the photoetching areas is completed; according to the technical scheme provided by the invention, the defect that the exposure dose cannot be adaptively adjusted according to the photoresist thickness can be effectively overcome.

Description

Technical Field

[0001] The invention relates to semiconductor photolithography, and in particular to a photolithography method for adaptively adjusting exposure dose based on photoresist thickness measurement. Background Art

[0002] The uniformity of photoresist thickness significantly impacts the critical dimensions of patterns in the mask manufacturing industry. The exposure dose of a lithography machine has varying effects on photoresists of varying thickness, thus affecting the reaction of back-end chemical solutions to the photolithography area. Currently, mainstream lithography machines for panel display masks are unable to effectively measure photoresist thickness, making it difficult to develop real-time exposure dose adjustments tailored to the thickness.

[0003] In view of this, there is an urgent need to design a lithography method for adaptively adjusting exposure dose based on photoresist thickness measurement, and to formulate a corresponding exposure dose adjustment plan by measuring the photoresist thickness in real time. Summary of the Invention

[0004] (1) Technical problems solved

[0005] In view of the above shortcomings of the prior art, the present invention provides a lithography method for adaptively adjusting exposure dose based on photoresist thickness measurement, which can effectively overcome the defect of the prior art that the exposure dose cannot be adaptively adjusted according to the photoresist thickness.

[0006] (2) Technical solution

[0007] To achieve the above objectives, the present invention is implemented through the following technical solutions:

[0008] The method for adaptively adjusting exposure dose of a photolithography film based on photoresist thickness measurement includes the following steps:

[0009] S1. Install a photoresist thickness measuring device on the photolithography machine, place the mask plate raw material into the photolithography machine, and adjust the incident light position of the photoresist thickness measuring device;

[0010] S2, measuring the thickness of the photoresist in the photolithography area on the mask original material by using a photoresist thickness measuring device;

[0011] S3, estimating the thickness of the photoresist at each position in the photolithography area according to the photoresist thickness measurement result;

[0012] S4. Calculate the exposure dose required for each position in the photolithography area based on the relationship between the photoresist thickness and the exposure dose;

[0013] S5. The photolithography machine performs photolithography on the mask original material according to the exposure dose required for each position in the photolithography area. While performing photolithography, the photoresist thickness measuring device continues to measure the photoresist thickness of the next photolithography area on the mask original material and returns to S3 until the photolithography work of all photolithography areas is completed.

[0014] Preferably, the photolithography machine includes a photolithography laser, a photolithography lens, a photolithography lens and an equipment carrier;

[0015] Lithography laser, which emits lithography laser to the lithography lens;

[0016] The photolithography lens reflects the photolithography laser so that the photolithography laser passes through the photolithography lens;

[0017] The photolithography lens is fixedly mounted on the X-direction moving unit and uses the photolithography laser to perform photolithography on the mask material along the X direction;

[0018] The equipment stage is used to place the mask original material. When the lithography machine lens completes each photolithography along the X direction, it drives the mask original material to move a certain distance in the Y direction.

[0019] The X-direction moving unit is slidably connected to the X-direction cross bridge.

[0020] Preferably, the glue thickness measuring device comprises an interferometer glue thickness measuring laser, a glue thickness measuring optical path unit, a glue thickness measuring interferometer lens and a data processing unit;

[0021] Interferometer glue thickness measurement laser, emits measurement laser to glue thickness measurement optical path unit;

[0022] The glue thickness measurement optical path unit reflects the measurement laser so that the measurement laser is irradiated onto the mask original material;

[0023] The interferometer lens for measuring the thickness of the mask further reflects the reflected light from the photoresist surface of the mask and the reflected light from the chromium oxide surface below the photoresist, so that the two beams of reflected light enter the data processing unit;

[0024] The data processing unit calculates and measures the glue thickness at the laser irradiation location based on the optical path difference between the two reflected light beams.

[0025] Preferably, adjusting the incident light position of the glue thickness measuring device in S1 includes:

[0026] Since the actual scanning width S of the lithography machine i Related to the graphics, in order to ensure that the Y-axis measurement step of the glue thickness measuring device is consistent with the actual scanning width S i If the glue thickness is consistent, the incident light position of the glue thickness measuring device needs to be adjusted:

[0027] S11. Calculate the actual scan width S based on the graph i , combined with the maximum scanning width S of the lithography machine max Here, the default position of the glue thickness measuring device is S away from the edge of the graphic. max / 2, calculate the incident light position adjustment distance ΔS of the glue thickness measuring device:

[0028] ΔS=(S max -S i ) / 2;

[0029] S12. Measure the inclination angle θ of the lens 3 in the optical path unit according to the glue thickness, and calculate the descending height ΔH of the lens 3:

[0030] ΔH=tanθ*ΔS;

[0031] The adhesive thickness measurement optical path unit includes lens 1, lens 2 and lens 3.

[0032] Preferably, the data processing unit calculates and measures the glue thickness at the laser irradiation location based on the optical path difference between the two beams of reflected light, including:

[0033] The optical path difference between the two reflected light beams is 2nd. When the optical path difference 2nd is an integer multiple of the measuring laser wavelength, constructive interference occurs, i.e., bright fringes; when the optical path difference 2nd is a half-integer multiple of the measuring laser wavelength, destructive interference occurs, i.e., dark fringes.

[0034] Combined with the known photoresist refractive index n or multi-wavelength measurement, the resist thickness d at the laser irradiation point can be calculated and measured.

[0035] Preferably, in S2, measuring the thickness of the photoresist in the photolithography area on the mask original material by using a photoresist thickness measuring device includes:

[0036] In both X and Y directions, the distance from the edge of the figure is S i / 2 is the starting point, and the photolithography area on the mask original material is measured along the X direction, and the Y direction measurement step is kept consistent with the actual scanning width S i consistent.

[0037] Preferably, estimating the thickness of the adhesive at each position in the photolithography area according to the adhesive thickness measurement result in S3 includes:

[0038] The bilinear interpolation method is used to estimate the thickness of the photoresist at each position in the photolithography area based on the photoresist thickness measurement results:

[0039] Define the grid point thickness matrix D i,j ;

[0040] Where i = 0, 1, ..., m, m is the grid point thickness matrix T i,j The number of columns, j = 0, 1, ..., n, n is the grid point glue thickness matrix T i,j number of rows;

[0041] 1) For any position (x,y) within the original grid cell range:

[0042] Determine the grid cell to which any position (x,y) belongs:

[0043]

[0044] in, Indicates rounding down, Δx=Δy=S i ;

[0045] Calculate the relative position (u,v) of any position (x,y) within its grid cell:

[0046]

[0047] Among them, u,v∈(0,1);

[0048] According to the glue thickness at the four corner points of the grid unit, the glue thickness d(x,y) at any position (x,y) is calculated using bilinear weighting:

[0049] d(x,y)=(1-u)(1-v)d i,j +u(1-v)d i+1,j +(1-u)vd i,j+1 +uvd i+1,j+1 ;

[0050] Among them, d i,j is the grid dot thickness matrix D i,j The thickness of the grid point glue in row j and column i is d i+1,j is the grid dot thickness matrix D i,j The thickness of the grid point glue in the jth row and the i+1th column, d i,j+1 is the grid dot thickness matrix D i,j The thickness of the grid point glue in the j+1th row and ith column is d i+1,j+1 is the grid dot thickness matrix D i,j The thickness of the grid point at row j+1 and column i+1;

[0051] 2) For any position (x * ,y * ):

[0052] With any position (x * ,y * ) is the glue thickness at the position closest to the original grid unit as the glue thickness d(x * ,y * ),Right now:

[0053] d(x*,y*)=d(x nearest ,y nearest );

[0054] Among them, d(x nearest ,y nearest) is any position (x * ,y * ) is the closest position within the original grid cell (x nearest ,y nearest ) at the glue thickness.

[0055] Preferably, calculating the exposure dose required for each position in the lithography area according to the relationship between the photoresist thickness and the exposure dose in S4 includes:

[0056] S41. Based on the photochemical reaction kinetics of the photoresist and the nonlinear compensation of the photoresist thickness, the relationship between the photoresist thickness and the exposure dose is obtained:

[0057] E(k,l)=E0[d(k,l) / d0] γ +α[d(k,l)-d0] 2 ;

[0058] Where E(k,l) is the exposure dose at any position (k,l) in the lithography area, d(k,l) is the thickness of the glue at any position (k,l) in the lithography area, and any position (k,l) includes any position (x,y) within the original grid unit range and any position (x,y) outside the original grid unit range. * ,y * ), d0 is the standard adhesive thickness, E0 is the exposure dose required for the standard adhesive thickness d0, γ is the process sensitivity index, and α is the nonlinear compensation coefficient of adhesive thickness;

[0059] S42. Calculate the exposure dose required for each position in the photolithography area according to the relationship between the photoresist thickness and the exposure dose.

[0060] (3) Beneficial effects

[0061] Compared with the prior art, the method for adaptively adjusting exposure dose based on photoresist thickness measurement provided by the present invention has the following beneficial effects:

[0062] 1) It can adaptively adjust the exposure dose in real time according to the thickness of the photoresist, effectively improving the CD deviation caused by the change of the photoresist thickness;

[0063] 2) Mirror thickness measurement and photolithography are performed simultaneously to optimize production capacity;

[0064] 3) The distance between the adhesive thickness measurement points is at the micron level, and the exposure dose adjustment is highly effective;

[0065] 4) The algorithm is simple and the exposure dose adjustment has good real-time performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0066] To more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. Those skilled in the art can also derive other drawings based on these drawings without inventive effort.

[0067] Figure 1 It is a schematic diagram of the process of the present invention;

[0068] Figure 2 Schematic diagram of the structure of the photolithography machine in the present invention;

[0069] Figure 3 Schematic diagram of the structure of the glue thickness measuring device of the present invention;

[0070] Figure 4 A simplified optical path diagram of the adhesive thickness measuring optical path unit in the adhesive thickness measuring device of the present invention;

[0071] Figure 5 Schematic diagram of the device for measuring the thickness of a photoresist in the present invention measuring the thickness of a photoresist in a photoresist region on a mask original. DETAILED DESCRIPTION

[0072] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0073] In the technical solution of this application, Figure 2 As shown, the lithography machine includes a lithography laser, a lithography lens, a lithography lens and an equipment carrier;

[0074] Lithography laser, which emits lithography laser to the lithography lens;

[0075] The photolithography lens reflects the photolithography laser so that the photolithography laser passes through the photolithography lens;

[0076] The photolithography lens is fixedly mounted on the X-direction moving unit and uses the photolithography laser to perform photolithography on the mask material along the X direction;

[0077] The equipment stage is used to place the mask original material. When the lithography machine lens completes each photolithography along the X direction, it drives the mask original material to move a certain distance in the Y direction.

[0078] The X-direction moving unit is slidably connected to the X-direction cross bridge.

[0079] In the technical solution of this application, Figure 3 As shown, the glue thickness measuring device includes an interferometer glue thickness measuring laser, a glue thickness measuring optical path unit, a glue thickness measuring interferometer lens and a data processing unit;

[0080] The interferometer glue thickness measurement laser emits a measurement laser (red light with a wavelength of 632nm, which does not react with the photoresist and can ensure the stability of the photoresist) to the glue thickness measurement optical path unit;

[0081] The glue thickness measurement optical path unit reflects the measurement laser so that the measurement laser is irradiated onto the mask original material;

[0082] The interferometer lens for measuring the thickness of the mask further reflects the reflected light from the photoresist surface of the mask and the reflected light from the chromium oxide surface below the photoresist, so that the two beams of reflected light enter the data processing unit;

[0083] The data processing unit calculates and measures the glue thickness at the laser irradiation location based on the optical path difference between the two reflected light beams.

[0084] Specifically, the data processing unit calculates and measures the glue thickness at the laser irradiation location based on the optical path difference between the two reflected light beams, including:

[0085] The optical path difference between the two reflected light beams is 2nd. When the optical path difference 2nd is an integer multiple of the measuring laser wavelength, constructive interference occurs, i.e., bright fringes; when the optical path difference 2nd is a half-integer multiple of the measuring laser wavelength, destructive interference occurs, i.e., dark fringes.

[0086] Combined with the known photoresist refractive index n or multi-wavelength measurement, the resist thickness d at the laser irradiation point can be calculated and measured.

[0087] The exposure dose adaptive adjustment lithography method based on photoresist thickness measurement, such as Figure 1 As shown, the following steps are included:

[0088] S1. Install a photoresist thickness measuring device on the photolithography machine, place the mask plate raw material into the photolithography machine, and adjust the incident light position of the photoresist thickness measuring device.

[0089] Specifically, the incident light position of the glue thickness measuring device is adjusted, such as Figure 4 Shown, including:

[0090] Since the actual scanning width S of the lithography machine i Related to the graphics, in order to ensure that the Y-axis measurement step of the glue thickness measuring device is consistent with the actual scanning width S i If the glue thickness is consistent, the incident light position of the glue thickness measuring device needs to be adjusted:

[0091] S11. Calculate the actual scan width S based on the graph i, combined with the maximum scanning width S of the lithography machine max Here, the default position of the glue thickness measuring device is S away from the edge of the graphic. max / 2, calculate the incident light position adjustment distance ΔS of the glue thickness measuring device:

[0092] ΔS=(S max -S i ) / 2;

[0093] S12. Calculate the drop height ΔH of the lens 3 based on the inclination angle θ of the lens 3 in the adhesive thickness measurement optical path unit (usually tens of microns, so the effect on adhesive thickness measurement can be ignored):

[0094] ΔH=tanθ*ΔS;

[0095] The adhesive thickness measurement optical path unit includes lens 1, lens 2 and lens 3.

[0096] S2, measure the thickness of the photolithography area on the mask plate by using the glue thickness measuring device, such as Figure 5 As shown, specifically including:

[0097] In both X and Y directions, the distance from the edge of the figure is S i / 2 is the starting point, and the photolithography area on the mask original material is measured along the X direction, and the Y direction measurement step is kept consistent with the actual scanning width S i consistent.

[0098] S3, estimating the thickness of the photoresist at each position in the photolithography area according to the photoresist thickness measurement result, specifically including:

[0099] The bilinear interpolation method is used to estimate the thickness of the photoresist at each position in the photolithography area based on the photoresist thickness measurement results:

[0100] Define the grid point thickness matrix D i,j (The spacing between grid points is in the micrometer range);

[0101] Where i = 0, 1, ..., m, m is the grid point thickness matrix T i,j The number of columns, j = 0, 1, ..., n, n is the grid point glue thickness matrix T i,j number of rows;

[0102] 1) For any position (x,y) within the original grid cell range:

[0103] Determine the grid cell to which any position (x,y) belongs:

[0104]

[0105] in, Indicates rounding down, Δx=Δy=Si ;

[0106] Calculate the relative position (u,v) of any position (x,y) within its grid cell:

[0107]

[0108] Among them, u,v∈(0,1);

[0109] According to the glue thickness at the four corner points of the grid unit, the glue thickness d(x,y) at any position (x,y) is calculated using bilinear weighting:

[0110] d(x,y)=(1-u)(1-v)d i,j +u(1-v)d i+1,j +(1-u)vd i,j+1 +uvd i+1,j+1 ;

[0111] Among them, d i,j is the grid dot thickness matrix D i,j The thickness of the grid point glue in row j and column i is d i+1,j is the grid dot thickness matrix D i,j The thickness of the grid point glue in the jth row and the i+1th column, d i,j+1 is the grid dot thickness matrix D i,j The thickness of the grid point glue in the j+1th row and ith column is d i+1,j+1 is the grid dot thickness matrix D i,j The thickness of the grid point at row j+1 and column i+1;

[0112] 2) For any position (x * ,y * ):

[0113] With any position (x * ,y * ) is the glue thickness at the position closest to the original grid unit as the glue thickness d(x * ,y * ),Right now:

[0114] d(x*,y * )=d(x nearest ,y nearest );

[0115] Among them, d(x nearest ,y nearest ) is any position (x * ,y * ) is the closest position within the original grid cell (xnearest ,y nearest ) at the glue thickness.

[0116] S4. Calculate the exposure dose required for each position in the photolithography area based on the relationship between the photoresist thickness and the exposure dose, specifically including:

[0117] S41. Based on the photochemical reaction kinetics of the photoresist and the nonlinear compensation of the photoresist thickness, the relationship between the photoresist thickness and the exposure dose is obtained:

[0118] E(k,l)=E0[d(k,l) / d0] γ +α[d(k,l)-d0] 2 ;

[0119] Where E(k,l) is the exposure dose at any position (k,l) in the lithography area, d(k,l) is the thickness of the glue at any position (k,l) in the lithography area, and any position (k,l) includes any position (x,y) within the original grid unit range and any position (x,y) outside the original grid unit range. * ,y * ), d0 is the standard adhesive thickness, E0 is the exposure dose required for the standard adhesive thickness d0, γ is the process sensitivity index, and α is the nonlinear compensation coefficient of adhesive thickness;

[0120] S42. Calculate the exposure dose required for each position in the photolithography area according to the relationship between the photoresist thickness and the exposure dose.

[0121] S5. The photolithography machine performs photolithography on the mask original material according to the exposure dose required for each position in the photolithography area. While performing photolithography, the photoresist thickness measuring device continues to measure the photoresist thickness of the next photolithography area on the mask original material and returns to S3 until the photolithography work of all photolithography areas is completed.

[0122] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements will not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims

1. A method for adaptively adjusting exposure dose based on photoresist thickness measurement, characterized in that: The following steps are involved: S1. Install a photoresist thickness measuring device on the photolithography machine, place the mask plate raw material into the photolithography machine, and adjust the incident light position of the photoresist thickness measuring device; S2, measuring the thickness of the photoresist in the photolithography area on the mask original material by using a photoresist thickness measuring device; S3, estimating the thickness of the photoresist at each position in the photolithography area according to the photoresist thickness measurement result; S4. Calculate the exposure dose required for each position in the photolithography area based on the relationship between the photoresist thickness and the exposure dose; S5. The photolithography machine performs photolithography on the mask original material according to the exposure dose required for each position in the photolithography area. While performing photolithography, the photoresist thickness measuring device continues to measure the photoresist thickness of the next photolithography area on the mask original material and returns to S3 until the photolithography work of all photolithography areas is completed.

2. The method for adaptively adjusting exposure dose based on photoresist thickness measurement according to claim 1, wherein: The photolithography machine includes a photolithography laser, a photolithography lens, a photolithography lens and an equipment carrier; Lithography laser, which emits lithography laser to the lithography lens; The photolithography lens reflects the photolithography laser so that the photolithography laser passes through the photolithography lens; The photolithography lens is fixedly mounted on the X-direction moving unit and uses the photolithography laser to perform photolithography on the mask material along the X direction; The equipment stage is used to place the mask original material. When the lithography machine lens completes each photolithography along the X direction, it drives the mask original material to move a certain distance in the Y direction. The X-direction moving unit is slidably connected to the X-direction cross bridge.

3. The method for adaptively adjusting exposure dose based on photoresist thickness measurement according to claim 2, wherein: The glue thickness measuring device includes an interferometer glue thickness measuring laser, a glue thickness measuring optical path unit, a glue thickness measuring interferometer lens and a data processing unit; Interferometer glue thickness measurement laser, emits measurement laser to glue thickness measurement optical path unit; The glue thickness measurement optical path unit reflects the measurement laser so that the measurement laser is irradiated onto the mask original material; The interferometer lens for measuring the thickness of the mask further reflects the reflected light from the photoresist surface of the mask and the reflected light from the chromium oxide surface below the photoresist, so that the two beams of reflected light enter the data processing unit; The data processing unit calculates and measures the glue thickness at the laser irradiation location based on the optical path difference between the two reflected light beams.

4. The method for adaptively adjusting exposure dose based on photoresist thickness measurement according to claim 3, wherein: In S1, the incident light position of the glue thickness measuring device is adjusted, including: Since the actual scanning width S of the lithography machine i Related to the graphics, in order to ensure that the Y-axis measurement step of the glue thickness measuring device is consistent with the actual scanning width S i If the glue thickness is consistent, the incident light position of the glue thickness measuring device needs to be adjusted: S11. Calculate the actual scan width S based on the graph i , combined with the maximum scanning width S of the lithography machine max Here, the default position of the glue thickness measuring device is S away from the edge of the graphic. max / 2, calculate the incident light position adjustment distance ΔS of the glue thickness measuring device: ΔS=(S max -S i ) / 2; S12. Measure the inclination angle θ of the lens 3 in the optical path unit according to the glue thickness, and calculate the descending height ΔH of the lens 3: ΔH=tanθ*ΔS; The adhesive thickness measurement optical path unit includes lens 1, lens 2 and lens 3.

5. The method for adaptively adjusting exposure dose based on photoresist thickness measurement according to claim 4, characterized in that: The data processing unit calculates and measures the glue thickness at the laser irradiation location based on the optical path difference between the two beams of reflected light, including: The optical path difference between the two reflected light beams is 2nd. When the optical path difference 2nd is an integer multiple of the measuring laser wavelength, constructive interference occurs, i.e., bright fringes; when the optical path difference 2nd is a half-integer multiple of the measuring laser wavelength, destructive interference occurs, i.e., dark fringes. Combined with the known photoresist refractive index n or multi-wavelength measurement, the resist thickness d at the laser irradiation point can be calculated and measured.

6. The method for adaptively adjusting exposure dose based on photoresist thickness measurement according to claim 5, characterized in that: In S2, the photoresist thickness of the photoresist area on the mask original is measured by a photoresist thickness measuring device, including: In both X and Y directions, the distance from the edge of the figure is S i / 2 is the starting point, and the photolithography area on the mask original material is measured along the X direction, and the Y direction measurement step is kept consistent with the actual scanning width S i consistent.

7. The method for adaptively adjusting exposure dose based on photoresist thickness measurement according to claim 6, wherein: In S3, the thickness of the photoresist at each position in the photolithography area is estimated based on the photoresist thickness measurement results, including: The bilinear interpolation method is used to estimate the thickness of the photoresist at each position in the photolithography area based on the photoresist thickness measurement results: Define the grid point thickness matrix D i,j ; Where i = 0, 1, ..., m, m is the grid point thickness matrix T i,j The number of columns, j = 0, 1, ..., n, n is the grid point glue thickness matrix T i,j number of rows; 1) For any position (x,y) within the original grid cell range: Determine the grid cell to which any position (x,y) belongs: in, Indicates rounding down, Δx=Δy=S i ; Calculate the relative position (u,v) of any position (x,y) within its grid cell: Among them, u,v∈(0,1); According to the glue thickness at the four corner points of the grid unit, the glue thickness d(x,y) at any position (x,y) is calculated using bilinear weighting: d(x,y)=(1-u)(1-v)d i,j +u(1-v)d i+1,j +(1-u)vd i,j+1 +uvd i+1,j+1 ; Among them, d i,j is the grid dot thickness matrix D i,j The thickness of the grid point glue in row j and column i is d i+1,j is the grid dot thickness matrix D i,j The thickness of the grid point glue in the jth row and the i+1th column, d i,j+1 is the grid dot thickness matrix D i,j The thickness of the grid point glue in the j+1th row and ith column is d i+1,j+1 is the grid dot thickness matrix D i,j The thickness of the grid point at row j+1 and column i+1; 2) For any position (x * ,y * ): With any position (x * ,y * ) is the glue thickness at the position closest to the original grid unit as the glue thickness d(x * ,y * ),Right now: d(x*,y * )=d(x nearest ,y nearest ); Among them, d(x nearest ,y nearest ) is any position (x * ,y * ) is the closest position within the original grid cell (x nearest ,y nearest ) at the glue thickness.

8. The method for adaptively adjusting exposure dose based on photoresist thickness measurement according to claim 7, wherein: In S4, the exposure dose required for each position in the lithography area is calculated based on the relationship between the photoresist thickness and the exposure dose, including: S41. Based on the photochemical reaction kinetics of the photoresist and the nonlinear compensation of the photoresist thickness, the relationship between the photoresist thickness and the exposure dose is obtained: E(k,l)=E0[d(k,l) / d0] γ +α[d(k,l)-d0] 2 ; Where E(k,l) is the exposure dose at any position (k,l) in the lithography area, d(k,l) is the thickness of the glue at any position (k,l) in the lithography area, and any position (k,l) includes any position (x,y) within the original grid unit range and any position (x,y) outside the original grid unit range. * ,y * ), d0 is the standard adhesive thickness, E0 is the exposure dose required for the standard adhesive thickness d0, γ is the process sensitivity index, and α is the nonlinear compensation coefficient of adhesive thickness; S42. Calculate the exposure dose required for each position in the photolithography area according to the relationship between the photoresist thickness and the exposure dose.

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