Adaptive Optimization Method and System for IGBT Modules in Power Electronic Systems

Abstract

The application discloses an IGBT module adaptive optimization method and system for a power electronic system, and relates to the technical field of semiconductors.The method comprises the following steps: monitoring an electric power scene in which an IGBT module is connected, and determining a load state; triggering an intelligent power module embedded in the IGBT module, triggering a working condition mode, and determining a load mode topology; opening a compensation branch in the intelligent power module, introducing multiple time scales, performing first time scale compensation in a switching transient process, performing second time scale compensation in a thermal cycle process, performing third time scale compensation in aging loss accumulation, performing optimization adjustment of the load mode topology under the condition of scale independence, determining IGBT drive parameters, and driving and controlling the IGBT module.The technical problem of insufficient adaptability of an IGBT module in different electric power scenes in the prior art is solved, and the technical effect of adaptive optimization adjustment of an IGBT module according to different load states is achieved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically to an adaptive optimization method and system for IGBT modules in power electronic systems. Background Technology

[0002] Insulated-gate bipolar transistors (IGBTs), as power electronic devices that combine the advantages of high input impedance of MOSFETs and low on-state voltage drop of GTRs, are widely used in various medium- and high-voltage power conversion systems such as photovoltaic inverters, electric vehicles, and grid conversion devices. In existing technologies, the driving parameters and operating strategies of IGBT modules are mostly set statically or manually adjusted based on experience, lacking real-time sensing and dynamic response capabilities to actual operating conditions. This leads to problems such as increased switching losses, increased risk of thermal breakdown, and shortened lifespan in IGBT devices under conditions of sudden load changes, abnormal environmental temperature rise, or long-term aging, making it difficult to meet the requirements of modern power electronic systems for device adaptability and high reliability. Summary of the Invention

[0003] This application provides an adaptive optimization method and system for IGBT modules in power electronic systems, which solves the technical problem of insufficient adaptability of IGBT modules in different power scenarios in the prior art.

[0004] The first aspect of this application provides an adaptive optimization method for IGBT modules in power electronic systems. The method includes: monitoring the power scenario to which the IGBT module is connected to determine the load state, wherein the IGBT module is composed of at least one IGBT chip and auxiliary circuitry; triggering an embedded intelligent power module within the IGBT module to perform operating mode triggering based on the load state, determining the load mode topology, wherein the load mode topology is a pre-adjusted topology based on a higher-level mode; opening a compensation branch in the intelligent power module, introducing multiple time scales, performing first time scale compensation based on switching transient processes, second time scale compensation based on thermal cycling processes, and third time scale compensation based on aging loss accumulation, performing scale-independent optimization adjustment of the load mode topology, determining IGBT drive parameters, and performing drive control of the IGBT module.

[0005] A second aspect of this application provides an adaptive optimization system for IGBT modules in power electronic systems, the system comprising:

[0006] Monitoring Unit: Monitors the power scenario connected to the IGBT module to determine the load status. The IGBT module consists of at least one IGBT chip and auxiliary circuit packaging. Triggering Unit: Based on the load status, triggers the intelligent power module embedded in the IGBT module to trigger the operating mode and determine the load mode topology. The load mode topology is a pre-adjusted topology based on the upper-level mode. Control Unit: Opens a compensation branch in the intelligent power module, introducing multiple time scales: first time scale compensation based on switching transients, second time scale compensation based on thermal cycling, and third time scale compensation based on aging loss accumulation. It performs scale-independent optimization adjustment of the load mode topology, determines the IGBT drive parameters, and drives the IGBT module.

[0007] One or more technical solutions provided in this application have at least the following technical effects or advantages:

[0008] First, the power scenario accessed by the IGBT module is monitored to determine the load status. The IGBT module consists of at least one IGBT chip and auxiliary circuitry. Then, based on the load status, the intelligent power module embedded within the IGBT module is triggered to initiate a working mode and determine the load mode topology. This load mode topology is a pre-adjusted topology based on the upper-level mode. Finally, a compensation branch is established in the intelligent power module, introducing multiple time scales: first, compensation based on switching transients; second, compensation based on thermal cycling; and third, compensation based on aging loss accumulation. The load mode topology is optimized and adjusted independently at each scale to determine the IGBT drive parameters and drive the IGBT module. This solves the technical problem of insufficient adaptability of IGBT modules in different power scenarios in existing technologies, achieving the technical effect of adaptive optimization and adjustment of the IGBT module according to different load states. Attached Figure Description

[0009] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0010] Figure 1 A schematic diagram of the adaptive optimization method for IGBT modules in power electronic systems provided in this application embodiment;

[0011] Figure 2 A schematic diagram of an adaptive optimization system structure for IGBT modules in power electronic systems provided in this application embodiment.

[0012] Explanation of reference numerals in the attached drawings: Monitoring unit 11, triggering unit 12, control unit 13. Detailed Implementation

[0013] This application provides an adaptive optimization method and system for IGBT modules in power electronic systems, which solves the technical problem of insufficient adaptability of IGBT modules in different power scenarios in the prior art.

[0014] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0015] It should be noted that the terms "comprising" and "having" are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or server that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or modules that are not explicitly listed or that are inherent to these processes, methods, products, or devices.

[0016] Example 1, as Figure 1 As shown, this application provides an adaptive optimization method for IGBT modules in power electronic systems, wherein the method includes:

[0017] The power scenario connected to the IGBT module is monitored to determine the load status. The IGBT module consists of at least one IGBT chip and auxiliary circuit packaging.

[0018] By using sensor components such as voltage, current, temperature, and frequency installed on the input side of the power electronic system or the IGBT module interface, the current operating parameters of the power system are collected in real time, and the operating characteristics of the current power scenario are analyzed and identified, including indicators such as load change rate, power factor, temperature rise rate, and current surge amplitude. Based on the monitoring process, the load state of the IGBT module is dynamically determined.

[0019] In this embodiment, the IGBT module includes at least one IGBT chip and auxiliary circuit units such as a driving circuit and an overcurrent / overtemperature protection circuit, all packaged in an integrated structure, supporting high-frequency switching control of current and voltage.

[0020] Based on the load state, the intelligent power module embedded in the IGBT module is triggered to perform operating mode triggering and determine the load mode topology, wherein the load mode topology is a pre-adjusted topology based on the upper-level mode.

[0021] Once the monitoring module identifies the current load state of the IGBT module, the system transmits the corresponding status signal to the intelligent power module deployed inside the IGBT module, based on the identified load type (e.g., excited-state load or steady-state load). The intelligent power module is an embedded processing unit integrated within the IGBT module, possessing computing power and strategy switching capabilities. It can dynamically select an appropriate power drive strategy according to different operating conditions. Upon triggering, the intelligent power module initiates a condition identification mechanism, performing condition mode matching and prediction based on the load state, historical operating data, and device characteristic parameters to determine the load mode topology suitable for the current power operating environment. The load mode topology is a configuration structure oriented towards the IGBT module's operating state, used to define the IGBT chip's connection method, drive method, and corresponding thermal and electrical stress management strategies. The load mode topology is a pre-adjustment topology structure formed based on the operating mode and adjustment target provided by the upper-level control system (e.g., main controller or system-level scheduling module), combined with the internal state of the IGBT module, possessing feedforward adjustment capabilities. For example, the upper-level mode can indicate whether the current system is in grid-connected operation, off-grid switching, or pulse charging and discharging stage. The intelligent power module then pre-configures parameters such as the working channel, drive threshold, and conduction time of the IGBT based on this upper-level mode, thereby ensuring that the load mode topology is highly coordinated with the system-level operating conditions.

[0022] Furthermore, triggering the intelligent power module embedded within the IGBT module includes:

[0023] Set up multi-level loads; for the multi-level loads, determine the load condition mode, which is divided into light load and heavy load categories. The light load category is a single tube parallel mode, and the heavy load category is a module series mode. Each category contains at least one level; based on the autonomous switching training under the load condition mode, construct the intelligent power module and embed it in the IGBT module.

[0024] The system sets multiple load levels based on actual power application scenarios and IGBT module design parameters to finely classify operating states under different power demands. These multi-level loads are divided into several levels according to load capacity and operational complexity, including but not limited to low load, medium load, and high load states.

[0025] For multi-level load conditions, the system further defines load operating modes. These modes are categorized according to electrical connection structure and power handling capacity, into two main types: light load and heavy load. The light load mode is suitable for conditions with small loads and minimal current fluctuations, employing a single-tube parallel mode (one or more IGBT chips connected in parallel to improve current sharing). The heavy load mode is suitable for conditions with large loads and frequent voltage or current fluctuations, employing a module series mode (multiple IGBT modules connected in series to share high voltage stress and achieve tiered power control). Within each load operating mode, multiple sub-levels are further defined to accommodate more refined load fluctuation adjustment requirements.

[0026] In this embodiment, based on training data from multi-level loads, and combining simulated operating conditions with actual operational data, reinforcement learning, pattern recognition, or other forms of autonomous switching training methods are employed to train and optimize control strategies under different load conditions. This results in the construction of an intelligent power module capable of pattern recognition, autonomous judgment, and strategy invocation. The intelligent power module is embedded within the IGBT module, possessing low-latency, high-reliability localized response capabilities. Without relying on an external controller, it can perform real-time identification of load changes and switching of operating modes, thereby achieving dynamic drive optimization of the IGBT module.

[0027] Furthermore, for the IGBT chip and auxiliary circuit built into the IGBT module, unconventional operating boundaries based on the smallest component unit are explored; using the unconventional operating boundaries as identification conditions, an autonomous isolation and reconstruction under fault-tolerant operation is deployed to form a fault-tolerant mode; and the fault-tolerant mode is incorporated into the load condition mode.

[0028] By dynamically monitoring and simulating the parameters of fine-grained structural units such as chip channels, current paths, heat dissipation channels, and protection mechanisms, a mapping model between operating states and failure risks is established. This allows for the identification of unconventional operating boundaries under extreme conditions such as high-frequency switching, electrothermal cycling, and local overvoltage. These unconventional operating boundaries include, but are not limited to, indicators such as the chip's extreme on-state voltage drop, extreme junction temperature threshold, and upper limit of current surge tolerance, reflecting atypical fault symptoms that may occur in devices under edge conditions.

[0029] After identifying the unconventional operating boundary, the system uses it as the basis for identifying fault-tolerant operation. When the system detects that the current operating state is approaching or exceeding a certain unconventional operating boundary, it triggers the fault-tolerant control mechanism, initiating autonomous isolation and functional reconfiguration operations. Specifically, autonomous isolation refers to logically or physically isolating and disabling chip units or channels with potential failure risks to prevent fault propagation; functional reconfiguration refers to re-establishing a sustainable operating structure by adjusting the working relationships between other components, such as switching backup drive paths, enabling redundant power modules, and adjusting current carrying ratios, to achieve degraded but uninterrupted operation assurance.

[0030] The above-mentioned fault-tolerant control strategy is defined as a fault-tolerant mode and incorporated into the load condition mode system as a part of it. This allows the system to dynamically determine whether to integrate the fault-tolerant mode while performing load level identification and condition mode switching, thereby achieving robust response to sudden failures, gradual aging, or uncertain conditions, and thus improving the safety and reliability of IGBT modules in the long-term operation of complex power electronic systems.

[0031] Furthermore, the load state is either an excited-state load or a stable-state load; if the load state is an excited-state load, the intelligent power module switches to a first mode sensitivity; if the load state is a stable-state load, the intelligent power module switches to a second mode sensitivity, wherein the first mode sensitivity is higher than the second mode sensitivity.

[0032] Load conditions can be divided into two types: excited-state load and steady-state load. Excited-state load refers to the operating condition in which the electrical load borne by the IGBT module changes rapidly, experiences short-term high-amplitude impacts, or transient over-limits, such as sudden current changes, sudden increases in switching frequency, or short-term high-power pulses. Excited-state loads require high dynamic response capabilities and protection sensitivity of the device. Steady-state loads, on the other hand, refer to the continuous and stable load state of the module, with small load fluctuations and relatively stable electrical and thermal characteristics. They are suitable for conventional drives and low-sensitivity protection strategies.

[0033] For different load states, the intelligent power module switches between different sensitivity modes to achieve optimal control: when the load is identified as an excited state, the intelligent power module automatically switches to the first sensitivity mode, which has high response sensitivity and control accuracy.

[0034] When a steady-state load is identified, the intelligent power module switches to the second sensitivity mode. The second sensitivity mode has a relatively low sensitivity and is mainly designed to optimize drive efficiency and thermal management for long-term steady-state operation, reducing unnecessary protection triggers and control oscillations, and improving the overall energy efficiency and lifespan of the system. The setting of the second sensitivity mode balances safety and stability, avoiding false triggers caused by excessive sensitivity.

[0035] Furthermore, triggering the operating mode and determining the load mode topology includes:

[0036] For the load state, a target load level is determined by performing level matching; a target operating mode is determined based on the target load level; a higher-level load mode topology is identified; and with the target operating mode, optimization decisions are made for IGBT chip selection under mode difference and series structure reconstruction to determine the load mode topology.

[0037] For the identified load states, the system uses a preset level matching mechanism, combined with real-time monitoring data and historical operating information, to determine the target load level corresponding to the current IGBT module. Based on the determined target load level, the system further maps the corresponding target operating mode. The target operating mode is a comprehensive description of the module's operating environment, load characteristics, and working state, reflecting the actual load conditions of the IGBT module, such as single-tube parallel connection, module series connection, pulse operation, or continuous steady-state mode.

[0038] Specifically, identifying the upper-level load mode topology refers to receiving and parsing load operation mode information transmitted by the upper-level control system (such as the main controller or power grid dispatching unit) to obtain the system's current required operating configuration. The upper-level load mode topology reflects the overall load demand, power allocation strategy, and operating constraints of the power electronic system. Based on this information, combined with the previously determined target operating mode, the intelligent power module optimizes the scheduling of existing IGBT chip resources. This includes calculating the mode difference, i.e., measuring the difference between the current operating mode and the predefined standard operating mode, as a decision-making basis to select appropriate IGBT chips to enable or disable to adapt to the current load demand. At the same time, the system dynamically reconfigures the series structure within the IGBT module, adjusts the connection method and drive strategy between chips, optimizes power allocation and thermal management, reduces stress concentration and energy consumption, and improves the overall system efficiency and reliability. Finally, through the optimized decision-making of chip selection and series structure reconfiguration, a load mode topology suitable for the current load demand is determined.

[0039] A compensation branch is established in the intelligent power module, introducing multiple time scales. The first time scale compensation is based on the switching transient process, the second time scale compensation is based on the thermal cycling process, and the third time scale compensation is based on the accumulation of aging losses. The load mode topology is optimized and adjusted under scale independence to determine the IGBT drive parameters and drive the IGBT module.

[0040] Multiple compensation branches are set up inside the intelligent power module, and corresponding compensation control strategies are designed for the performance changes and loss mechanisms at different time scales that occur in the IGBT module during actual operation.

[0041] The first time-scale compensation targets the switching transient process. This compensation branch monitors the switching state of the IGBT, identifies instantaneous current and voltage fluctuations during the switching process, and compensates for the switching losses and pulse interference caused by switching. By adjusting the gate voltage of the drive signal, the switching speed, and the dead time, real-time optimization of switching performance can be achieved, reducing switching losses and electromagnetic interference.

[0042] The second timescale compensation targets the thermal cycling process. This compensation branch monitors the junction temperature changes and thermal stress distribution of the module, analyzes the current sharing and thermal imbalance between chips, executes a multi-chip switching strategy, rationally allocates the load, avoids overheating or thermal fatigue of a single chip, delays damage caused by thermal stress, and improves the thermal management effect and operational stability of the module.

[0043] The third timescale compensation targets the aging loss accumulation process. This compensation branch is based on long-term monitoring data of the device's service status. It assesses the performance degradation caused by material aging, thermal cycling fatigue, and current-carrying stress, adjusts drive parameters and protection strategies, extends the device's service life, and triggers necessary maintenance prompts or fault-tolerant modes to ensure the system's continuous and reliable operation.

[0044] Through the independent and synergistic effects of the aforementioned multi-timescale compensation branches, the load mode topology is dynamically optimized and adjusted under scale-independent conditions. Based on this, the intelligent power module determines the optimal IGBT drive parameters, thereby achieving precise drive control of the IGBT module.

[0045] Furthermore, a compensation branch is established in the intelligent power module, including:

[0046] Based on the first time scale, a first compensation node is deployed for electrical compensation, wherein electrical losses include at least switching losses during the switching transient process and online pulse identification; based on the second time scale, a second compensation node is deployed for switching rotation compensation under multi-chip current sharing and thermal imbalance; based on the third time scale, a third compensation node is deployed for aging loss accumulation under service conditions; the first compensation node, the second compensation node, and the third compensation node are arranged in parallel as the compensation branch.

[0047] Furthermore, the system implements a multi-timescale approach, wherein the first timescale is at the nanosecond level, the second timescale is at the second level, the third timescale is at the month level, and the multi-timescale approach is adjustable.

[0048] The first compensation node is deployed based on a first time scale, corresponding to the switching transient process at the nanosecond to microsecond level. The first compensation node primarily targets the electrical losses generated by the IGBT module during high-speed switching, including but not limited to typical phenomena such as switching losses, voltage spikes, and current surges. By real-time acquisition of characteristics such as gate voltage and current change rates, an online pulse identification algorithm is executed to accurately identify non-ideal behaviors during high-frequency switching. Combined with active gate control technology, the turn-on / turn-off speed is adjusted, thereby achieving dynamic electrical compensation for switching losses.

[0049] A second compensation node is deployed based on a second timescale, typically on the order of seconds or minutes, reflecting the thermal imbalance caused by uneven thermal load among multiple chips within the IGBT module. The second compensation node continuously monitors parameters such as junction temperature and current distribution of each chip in the module to identify hotspot cells with concentrated loads. Combined with a switching strategy (i.e., periodically changing the order in which each chip bears the main load), it achieves current sharing compensation and optimized thermal stress distribution among the chips, effectively mitigating localized overheating and fatigue damage caused by thermal cycling.

[0050] A third compensation node is deployed based on a third time scale, typically on the monthly level, reflecting the gradual degradation trend of IGBT module performance during long-term service. The third compensation node continuously records aging indicators such as total module operating time, on / off cycles, and thermal cycles. It uses aging models (such as power cycle life or solder joint fatigue models) to assess the device health status and dynamically adjusts drive parameters, load limiting strategies, or fault tolerance mechanisms to address performance degradation and achieve feedforward long-term compensation for accumulated aging losses.

[0051] The first compensation node, the second compensation node, and the third compensation node are treated as relatively independent yet collaborative sub-modules, forming the compensation branches within the intelligent power module.

[0052] Furthermore, the first compensation node, the second compensation node, and the third compensation node perform relatively independent driving based on the constraints of their respective time scales.

[0053] The first, second, and third compensation nodes correspond to different operating dimensions and time scales within the intelligent power module. Based on their respective compensation objects and dynamic response requirements, they are independently configured with driving logic and parameter adjustment strategies, forming relatively independent driving channels to achieve parallel optimization and real-time response under multi-dimensional operating conditions.

[0054] Furthermore, the scale-independent optimization adjustment of the load mode topology includes:

[0055] According to the load mode topology, the operating conditions of the IGBT module are adjusted; with the operating condition adjustment based on the load mode topology, the compensation branch is triggered to perform adaptive optimization control under the operating conditions, based on the first time scale of the first compensation node, the second time scale of the second compensation node, and the third time scale of the third compensation node.

[0056] Based on the currently identified load mode topology, the corresponding operating condition adjustment strategy is executed, and then the preset multi-time scale compensation branches are activated simultaneously to achieve multi-dimensional adaptive optimization control from short-term dynamics to long-term lifespan.

[0057] During the operating condition adjustment phase, based on the IGBT module's structural characteristics (including the number of chips, connection method, conduction path, etc.) described in the load mode topology and the target operating condition (such as current level, thermal load level, etc.), structural and parameter-level adjustments are made to the module. For example, when dealing with a heavy-load series topology, electrical parameters are configured by adjusting the drive gate amplitude, duty cycle, and conduction sequence; while in a light-load parallel topology, priority is given to optimizing the chip current sharing capability and improving the thermal balance level to adapt to the operating requirements under different load levels.

[0058] As the operating condition adjustment is executed, the system will automatically identify the scope of impact involved in the current adjustment and trigger the corresponding compensation nodes according to the time scale.

[0059] Based on the first time scale (nanosecond to microsecond level) of the first compensation node, the system collects the transient signal of the switch in real time and triggers the adjustment of parameters such as switching speed and voltage slope to compensate for spikes, electromagnetic interference or local overshoot problems generated during the turn-on / turn-off process, so as to achieve fast-response electrical compensation.

[0060] Based on the second time scale (seconds to minutes) of the second compensation node, and combined with the temperature evolution and chip load distribution during the adjustment process, thermal equilibrium scheduling and chip switching are performed to reduce the risk of uneven temperature rise and thermal fatigue, and to implement medium-cycle thermal compensation and current sharing control.

[0061] Based on the third time scale (monthly or higher) of the third compensation node, the system incorporates module aging data and historical service records, and combines them with the current adjustment scheme to perform lifespan assessment and aging compensation, such as dynamic load reduction, fault tolerance activation, or health factor feedback, ensuring the stability and reliability of IGBT module operation in the long term. In summary, the embodiments of this application have at least the following technical effects:

[0062] First, the power scenario accessed by the IGBT module is monitored to determine the load status. The IGBT module consists of at least one IGBT chip and auxiliary circuitry. Then, based on the load status, the intelligent power module embedded within the IGBT module is triggered to initiate a working mode and determine the load mode topology. This load mode topology is a pre-adjusted topology based on the upper-level mode. Finally, a compensation branch is established in the intelligent power module, introducing multiple time scales: first, compensation based on switching transients; second, compensation based on thermal cycling; and third, compensation based on aging loss accumulation. The load mode topology is optimized and adjusted independently at each scale to determine the IGBT drive parameters and drive the IGBT module. This solves the technical problem of insufficient adaptability of IGBT modules in different power scenarios in existing technologies, achieving the technical effect of adaptive optimization and adjustment of the IGBT module according to different load states.

[0063] Example 2, based on the same inventive concept as the IGBT module adaptive optimization method for power electronic systems in the foregoing examples, such as... Figure 2 As shown, this application provides an adaptive optimization system for IGBT modules in power electronic systems, wherein the system includes:

[0064] Monitoring unit 11: Monitors the power scenario connected to the IGBT module to determine the load status. The IGBT module consists of at least one IGBT chip and auxiliary circuit packaging. Triggering unit 12: Triggers the intelligent power module embedded in the IGBT module according to the load status to trigger the operating mode and determine the load mode topology. The load mode topology is a pre-adjusted topology based on the upper-level mode. Control unit 13: Opens a compensation branch in the intelligent power module, introduces multiple time scales, performs first time scale compensation based on the switching transient process, second time scale compensation based on the thermal cycling process, and third time scale compensation based on the aging loss accumulation, optimizes and adjusts the load mode topology under scale independence, determines the IGBT drive parameters, and drives and controls the IGBT module.

[0065] Furthermore, the triggering unit 12 is used to perform the following method:

[0066] Set up multi-level loads; for the multi-level loads, determine the load condition mode, which is divided into light load and heavy load categories. The light load category is a single tube parallel mode, and the heavy load category is a module series mode. Each category contains at least one level; based on the autonomous switching training under the load condition mode, construct the intelligent power module and embed it in the IGBT module.

[0067] Furthermore, the triggering unit 12 is used to perform the following method:

[0068] For the IGBT chip and auxiliary circuit built into the IGBT module, unconventional operating boundaries based on the smallest component unit are explored; using the unconventional operating boundaries as identification conditions, an autonomous isolation and reconstruction under fault-tolerant operation is deployed to form a fault-tolerant mode; and the fault-tolerant mode is incorporated into the load condition mode.

[0069] Furthermore, the control unit 13 is configured to perform the following methods:

[0070] Based on the first time scale, a first compensation node is deployed for electrical compensation, wherein electrical losses include at least switching losses during the switching transient process and online pulse identification; based on the second time scale, a second compensation node is deployed for switching rotation compensation under multi-chip current sharing and thermal imbalance; based on the third time scale, a third compensation node is deployed for aging loss accumulation under service conditions; the first compensation node, the second compensation node, and the third compensation node are arranged in parallel as the compensation branch.

[0071] Furthermore, the control unit 13 is configured to perform the following methods:

[0072] The system implements a multi-timescale design, wherein the first timescale is at the nanosecond level, the second timescale is at the second level, the third timescale is at the month level, and the multi-timescale design is adjustable.

[0073] Furthermore, the control unit 13 is configured to perform the following methods:

[0074] The first compensation node, the second compensation node, and the third compensation node execute relatively independent drives based on the corresponding time scale constraints.

[0075] Furthermore, the monitoring unit 11 is used to perform the following methods:

[0076] The load state is either an excited state load or a stable state load; if the load state is an excited state load, the intelligent power module switches to a first mode sensitivity; if the load state is a stable state load, the intelligent power module switches to a second mode sensitivity, wherein the first mode sensitivity is higher than the second mode sensitivity.

[0077] Furthermore, the triggering unit 12 is used to perform the following method:

[0078] For the load state, a target load level is determined by performing level matching; a target operating mode is determined based on the target load level; a higher-level load mode topology is identified; and with the target operating mode, optimization decisions are made for IGBT chip selection under mode difference and series structure reconstruction to determine the load mode topology.

[0079] Furthermore, the control unit 13 is configured to perform the following methods:

[0080] According to the load mode topology, the operating conditions of the IGBT module are adjusted; with the operating condition adjustment based on the load mode topology, the compensation branch is triggered to perform adaptive optimization control under the operating conditions, based on the first time scale of the first compensation node, the second time scale of the second compensation node, and the third time scale of the third compensation node.

[0081] It should be noted that the order of the embodiments described above is merely for descriptive purposes and does not represent the superiority or inferiority of the embodiments. Furthermore, the above description focuses on specific embodiments of this specification. The processes depicted in the accompanying drawings do not necessarily require a specific or sequential order to achieve the desired results. In some implementations, multitasking and parallel processing are possible or may be advantageous.

[0082] The above description is only a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

[0083] This specification and accompanying drawings are merely illustrative examples of this application and are intended to cover any and all modifications, variations, combinations, or equivalents within the scope of this application. Clearly, those skilled in the art can make various alterations and modifications to this application without departing from its scope. Therefore, if such modifications and modifications fall within the scope of this application and its equivalents, this application intends to include such modifications and modifications.

Claims

1. An adaptive optimization method for IGBT modules oriented to power electronic systems, characterized by, The method comprises: monitoring the power scene accessed by the IGBT module, determining the load state, wherein the IGBT module is composed of at least one IGBT chip and auxiliary circuit package; According to the load state, trigger the intelligent power module embedded in the IGBT module, trigger the working condition mode, determine the load mode topology, wherein the load mode topology is a pre-adjustment topology based on the upper mode; Open a compensation branch in the intelligent power module, introduce multi-time scale, perform first time scale compensation in switching transient process, perform second time scale compensation in thermal cycle process, perform third time scale compensation in aging loss accumulation, optimize and adjust the load mode topology under the scale independence, determine the IGBT drive parameter, and drive control the IGBT module; Triggering the working condition mode, determining the load mode topology, comprising: For the load state, determine the target load level by performing level matching; According to the target load level, determine the target working condition mode; Identify the upper load mode topology, execute the IGBT chip selection under the mode difference, the optimization decision under the series structure reconstruction, and determine the load mode topology.

2. The power electronics system oriented IGBT module adaptive optimization method of claim 1, wherein, Triggering the intelligent power module embedded in the IGBT module, comprising: Set multiple load levels; For the multiple load levels, determine the load working condition mode, wherein it is divided into light load class and heavy load class, the light load class is single tube parallel mode, and the heavy load class is module series mode, and each class contains at least one level; According to the autonomous switching training under the load working condition mode, build the intelligent power module and embed it in the IGBT module.

3. The power electronics system oriented IGBT module adaptive optimization method of claim 2, wherein, For the IGBT chip and auxiliary circuit built-in the IGBT module, excavate the unconventional operation boundary based on the minimum component unit; Taking the unconventional operation boundary as the recognition condition, deploying fault-tolerant mode under fault-tolerant operation; Integrate the fault-tolerant mode into the load working condition mode.

4. The power electronics system oriented IGBT module adaptive optimization method of claim 1, wherein, Opening a compensation branch in the intelligent power module, comprising: According to the electrical compensation, deploy the first compensation node under the first time scale, wherein the electrical loss at least contains the on-off loss of switching transient process and online pulse identification; According to the second time scale, deploy the second compensation node under the switching rotation compensation of multi-chip current sharing and thermal imbalance; According to the third time scale, deploy the third compensation node under the aging loss accumulation in service state; Parallel the first compensation node, the second compensation node and the third compensation node as the compensation branch.

5. The power electronics system oriented IGBT module adaptive optimization method of claim 4, wherein, Execute multi-time scale specification, wherein the first time scale is nanosecond level, the second time scale is second level, the third time scale is month level, and the multi-time scale is adjustable.

6. The power electronics system oriented IGBT module adaptive optimization method of claim 4, wherein, The first compensation node, the second compensation node and the third compensation node execute relative independent drive under the corresponding time scale constraint.

7. The power electronics system oriented IGBT module adaptive optimization method of claim 1, wherein, The load state is excited state load or stable state load; If the load state is excited state load, the intelligent power module switches the first mode sensitivity; If the load state is a steady state load, the smart power module switches a second mode sensitivity, wherein the first mode sensitivity is higher than the second mode sensitivity.

8. The power electronics system oriented IGBT module adaptive optimization method of claim 4, wherein, The load mode topology is optimized and adjusted independently of the scale, including: According to the load mode topology, the IGBT module is adjusted and controlled in working conditions. With the working condition adjustment based on the load mode topology, the compensation branch is triggered to trigger compensation based on the first time scale of the first compensation node, the second time scale of the second compensation node, and the third time scale of the third compensation node, and to perform adaptive optimization control in working condition operation.

9. An IGBT module adaptive optimization system for power electronic systems, characterized by, The IGBT module adaptive optimization method for the power electronic system of claim 1-8, the system comprising: A monitoring unit: monitoring the power scene accessed by the IGBT module, and determining the load state, wherein the IGBT module is composed of at least one IGBT chip and an auxiliary circuit package; A triggering unit: according to the load state, triggering the smart power module embedded in the IGBT module to trigger the working condition mode, and determining the load mode topology, wherein the load mode topology is a pre-adjustment topology based on the upper mode; A control unit: opening a compensation branch in the smart power module, introducing multiple time scales, switching the first time scale compensation in the switching transient process, the second time scale compensation in the thermal cycle process, and the third time scale compensation in the aging loss accumulation, optimizing and adjusting the load mode topology independently of the scale, determining the IGBT drive parameters, and driving and controlling the IGBT module.

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