Epoxy resin composition and semiconductor device

Abstract

An epoxy resin composition containing (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler, the content of the (C) inorganic filler being 85 mass% or more and less than 92 mass% with respect to the total mass of the epoxy resin composition. The inorganic filler (C) contains (C1) alumina particles having an average particle diameter of 0.1 [mu] m to 0.9 [mu] m (inclusive) and (C2) alumina particles having an average particle diameter of 5 [mu] m to 50 [mu] m (inclusive), and the (C1) alumina particles have an alpha-phase content of 70% or more.

Description

Technical Field

[0001] The present disclosure relates to epoxy resin compositions and semiconductor devices. Background Art

[0002] In recent years, as electronic devices have become more sophisticated and faster, the density and multi-layer wiring of semiconductor device circuits have continued to increase. This has led to an increase in the heat generated by the semiconductor devices themselves. Against this backdrop, there is a growing demand for semiconductor packaging materials with excellent heat dissipation properties.

[0003] In addition, in recent years, for semiconductor devices, in order to meet the requirements of miniaturization, thinness, high functionality, high integration and high speed, the flip chip connection method (FC connection method) that connects semiconductor elements to the substrate via conductive protrusions called bumps is becoming popular, and the demand for semiconductor packaging materials with excellent narrow part filling properties is increasing.

[0004] Patent Document 1 discloses a technology for improving the thermal conductivity of a cured product of a semiconductor encapsulating epoxy resin composition by increasing the content of aluminum oxide (hereinafter, α-alumina) whose primary crystalline phase is an α-phase in an inorganic filler (filler) constituting the epoxy resin composition for semiconductor encapsulation. Specifically, the invention discloses an epoxy resin composition containing an inorganic filler containing α-alumina with an α crystallization fraction of 40% to 90%.

[0005] Patent Document 1 relates to the narrow portion filling property of an epoxy resin composition and discloses that by setting the average particle size of the inorganic filler to 0.1 μm or more, an increase in the viscosity of the liquid epoxy resin composition is suppressed, thereby suppressing a decrease in the penetrability.

[0006] Furthermore, Patent Document 1 discloses that by setting the average particle size of the inorganic filler to 0.1 μm or more and 2.0 μm or less, the penetration of the epoxy resin composition and the thermal conductivity of the cured product can be further improved.

[0007] Prior art literature

[0008] Patent Literature

[0009] Patent Document 1: International Publication No. 2022 / 024727. Summary of the Invention

[0010] The present disclosure provides the following solutions.

[0011] <Epoxy resin composition>

[0012] [1] An epoxy resin composition comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler, wherein the content of the (C) inorganic filler is 85% by mass or more and less than 92% by mass relative to the total mass of the epoxy resin composition, the (C) inorganic filler comprises (C1) alumina particles having an average particle size of 0.1 μm or more and 0.9 μm or less, and (C2) alumina particles having an average particle size of 5 μm or more and 50 μm or less, and the α phase content of the (C1) alumina particles is 70% or more.

[0013] [2] The epoxy resin composition according to [1], wherein the total content of the (C1) alumina particles and the (C2) alumina particles is 95% by mass or more relative to the total mass of the (C) inorganic filler.

[0014] [3] The epoxy resin composition according to [1] or [2], wherein the average circularity of the (C1) aluminum oxide particles and the average circularity of the (C2) aluminum oxide particles are both 0.8 or greater.

[0015] [4] The epoxy resin composition according to any one of [1] to [3], wherein the content ratio (C1:C2) of the (C1) aluminum oxide particles to the (C2) aluminum oxide particles is 1:8 or more and 1:1 or less in terms of mass ratio.

[0016] [5] The epoxy resin composition according to any one of [1] to [4], wherein the maximum particle size of the (C2) aluminum oxide particles is 15 μm or more and 75 μm or less.

[0017] [6] The epoxy resin composition according to any one of [1] to [5], wherein the (C) inorganic filler further comprises (C3) a specific surface area of ​​150 m 2 / g and above and 250m 2 / g or less of silica particles.

[0018] [7] The epoxy resin composition according to any one of [1] to [6], further comprising (D) a latent curing accelerator.

[0019] [8] The epoxy resin composition according to any one of [1] to [7], wherein the (A) epoxy resin comprises a crystalline epoxy resin.

[0020] Semiconductor devices

[0021] [9] A semiconductor device comprising a cured product of the epoxy resin composition according to any one of [1] to [8]. DETAILED DESCRIPTION

[0022] Hereinafter, embodiments of the present disclosure will be described in detail.

[0023] In the following description, the term "A to B" when describing a numerical range means "A or greater and B or less," inclusive of the endpoints. When describing "may be A to B, may be C to D, or may be E to F," the upper and lower limits may be arbitrarily combined. Furthermore, in numerical ranges described in this specification, the upper and lower limits of the ranges may be replaced with the values ​​shown in the Examples.

[0024] [Epoxy resin composition]

[0025] An epoxy resin composition in one embodiment contains (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler. The content of the (C) inorganic filler is 85% by mass or more and less than 92% by mass relative to the total mass of the epoxy resin composition. The (C) inorganic filler includes (C1) alumina particles having an average particle size of 0.1 μm or more and 0.9 μm or less, and (C2) alumina particles having an average particle size of 5 μm or more and 50 μm or less. The (C1) alumina particles have an α-phase content of 70% or more.

[0026] <(A) Epoxy resin>

[0027] The component (A) may be a component having two or more epoxy groups in one molecule, and its molecular weight, molecular structure, etc. are not particularly limited. For example, the component may include: crystalline epoxy resins such as biphenyl aralkyl epoxy resins, biphenyl epoxy resins, bisphenol epoxy resins, and stilbene epoxy resins; novolac epoxy resins such as phenol novolac epoxy resins and cresol novolac epoxy resins; polyfunctional epoxy resins such as trisphenol methane epoxy resins and alkyl-modified trisphenol methane epoxy resins; phenol aralkyl epoxy resins having a phenylene skeleton; naphthol epoxy resins such as dihydroxynaphthalene epoxy resins and epoxy resins obtained by glycidyl etherification of dihydroxynaphthalene dimers; triazine nucleus-containing epoxy resins such as triglycidyl isocyanurate and monoallyl glycidyl isocyanurate; and novolac epoxy resins modified with bridged cyclic hydrocarbon compounds such as dicyclopentadiene-modified novolac epoxy resins. These epoxy resins may be used alone or in combination of two or more.

[0028] Component (A) may be a crystalline epoxy resin or may contain a crystalline epoxy resin. A crystalline epoxy resin is an epoxy resin that is solid and crystalline at room temperature (25°C). Crystalline epoxy resins have a property of significantly decreasing viscosity when melted. The melting point of a crystalline epoxy resin may be 60 to 150°C or 90 to 130°C. The melting point of a crystalline epoxy resin can be measured by the endothermic peak of DSC.

[0029] (A) Component may be any one selected from the group consisting of biphenyl aralkyl epoxy resins, biphenyl epoxy resins, and bisphenol epoxy resins.

[0030] The softening point of (A) can be 40-120°C, 50-110°C, or 60-100°C. When the softening point of (A) is within this range, a suitable melt viscosity can be obtained. In this disclosure, the softening point refers to the "ring and ball softening point," which is a value measured according to ASTM D36.

[0031] The content of component (A) may be 5-30 mass %, 5-20 mass %, or 5-10 mass % relative to 100 mass % of the total of (A) epoxy resin, (B) curing agent, and (C) inorganic filler.

[0032] (B) Curing agent

[0033] Component (B) may be a phenol curing agent. Any known phenol curing agent having two or more phenolic hydroxyl groups in one molecule that can react with the epoxy groups of the epoxy resin (component (A)) may be used without particular limitation.

[0034] Examples of the phenol curing agent include: phenol compounds having two phenolic hydroxyl groups in one molecule, such as resorcinol, catechol, bisphenol A, bisphenol F, and substituted or unsubstituted bisphenols; novolac-type phenolic resins obtained by condensing or polycondensing phenols such as phenol, cresol, xylenol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol and / or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene with aldehydes such as formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde, and salicylaldehyde in the presence of an acidic catalyst; and Aralkyl-type phenolic resins such as phenol aralkyl resins synthesized from phenols and dimethoxy-p-xylene, bis(methoxymethyl)biphenyl, etc., naphthol aralkyl resins, biphenyl aralkyl resins, etc.; modified resins such as p-xylene-modified phenolic resins, m-xylene-modified phenolic resins, melamine-modified phenolic resins, and terpene-modified phenolic resins; dicyclopentadiene-type phenolic resins and dicyclopentadiene-type naphthol resins synthesized by copolymerizing phenols and / or naphthols with dicyclopentadiene; polycyclic aromatic ring-modified phenolic resins; biphenyl-type phenolic resins; and triphenylmethane-type phenolic resins. Phenolic resins obtained by copolymerizing two or more of the above-mentioned phenolic resins may also be used.

[0035] (B) Component may be used alone or in combination of two or more.

[0036] The softening point of the component (B) may be 70 to 120°C, or 80 to 100°C.

[0037] The content of the component (B) may be 1 to 10% by mass, or 2 to 5% by mass, relative to 100% by mass of the total of the (A) epoxy resin, the (B) curing agent, and the (C) inorganic filler.

[0038] <(C) Inorganic fillers>

[0039] The (C) component includes (C1) alumina particles having an average particle size of 0.1 μm or more and 0.9 μm or less and (C2) alumina particles having an average particle size of 5 μm or more and 50 μm or less. The α-phase content of (C1) only needs to be 70% or more. In addition, it may also contain known inorganic fillers commonly used in semiconductor encapsulation resin compositions. Examples of known inorganic fillers include fused silica, crystalline silica, crushed silica, synthetic silica, alumina, titanium dioxide, magnesium oxide, aluminum hydroxide, magnesium hydroxide, aluminum nitride, barium titanate, and silicon carbide. Two or more known inorganic fillers may also be used in combination.

[0040] The α-phase content of (C1) can be calculated from the α-alumina ratio of (C1). Specifically, a calibration curve can be created based on the X-ray diffraction measurement results of mixing alumina with a 100% α-phase content and alumina with a 100% γ-phase content at mass ratios of 5:95, 10:90, 35:65, and 50:50, and the α-phase content can be calculated using this calibration curve. The α-phase content of (C1) can be 70% or greater, 80% or greater, or 90% or greater. The upper limit of the α-phase content can be 100% or 95%.

[0041] The content of the component (C) may be 85% to less than 92% by mass, 87% to less than 91.5% by mass, or 88.5% to less than 91% by mass relative to the total mass of the epoxy resin composition.

[0042] <(C1) Alumina particles, (C2) Alumina particles>

[0043] The average particle size of the component (C1) may be 0.1 μm or more and 0.9 μm or less, 0.1 μm or more and 0.5 μm or less, or 0.1 μm or more and 0.3 μm or less.

[0044] The average particle size of the component (C2) may be 5 μm to 50 μm, 6 μm to 35 μm, 7 μm to 20 μm, or 8 μm to 15 μm.

[0045] The maximum particle size of the component (C2) may be 15 μm or more and 75 μm or less, 15 μm or more and 53 μm or less, or 15 μm or more and 25 μm or less.

[0046] By setting the average particle size of components (C1) and (C2) and the maximum particle size of component (C2) within the above ranges, the epoxy resin composition can be imparted with high penetrability. In other words, when the epoxy resin composition is used as an underfill material, it can easily penetrate even a narrow gap between the substrate and the chip.

[0047] The content ratio (C1:C2) of the component (C1) and the component (C2) may be 1:8 or more and 1:1 or less in terms of mass ratio.

[0048] The average circularity of the (C1) aluminum oxide particles and the average circularity of the (C2) aluminum oxide particles may both be 0.8 or more, or 0.95 or more.

[0049] When the average circularity of the (C1) aluminum oxide particles and the average circularity of the (C2) aluminum oxide particles are within the above range, the aluminum oxide particles are close to a true sphere, which can improve the fluidity of the epoxy resin composition. The above average circularity is the average value of the circularity. That is, the numerical value obtained by measuring the circularity of a specified number and averaging these measured values ​​is the average circularity. The more the number of roundness measurements, the more preferred, for example, more than 30. The roundness can be calculated using the area and circumference of a particle and according to the following formula (1). The closer the roundness is to 1, the closer it is to a perfect circle.

[0050] Formula (1): Roundness = 4π × area / (circumference) 2 (where 0 < roundness ≤ 1)

[0051] Specifically, the area of ​​one particle (the number of pixels contained in one particle) and its perimeter are determined by observing the particles using a microscope or a scanning electron microscope (SEM). The microscope is not particularly limited, and examples thereof include the VHX-6000 manufactured by Keyence Corporation. The scanning electron microscope is not particularly limited, and examples thereof include the JSM-7900F manufactured by JEOL Ltd. (accelerating voltage: 5 kV).

[0052] When the observation result of the particle is that the area of ​​a particle is less than 30 pixels, the number of pixels is used as the "area" in formula (1). The "perimeter" in formula (1) is the number of boundary pixels. The boundary pixels are pixels that include the outline of a particle. When the area of ​​a particle is more than 30 pixels, the remaining number of pixels obtained by subtracting half of the number of boundary pixels from the number of pixels is used as the "area" in formula (1). The "perimeter" in formula (1) is the number of boundary pixels. The above-mentioned average circularity can be calculated using a well-known image analysis device. That is, by photographing the particles using a CCD (Charge Coupled Device) or the like, and appropriately analyzing the obtained particle image using an image analysis device, the above-mentioned average circularity can be calculated.

[0053] The total content of the components (C1) and (C2) relative to 100% by mass of the total of the component (C) may be 100% by mass, 99% by mass or more, 97% by mass or more, or 95% by mass or more.

[0054] <(C3) Finely divided silicon dioxide>

[0055] Component (C) may further contain (C3) having a specific surface area of ​​150 m 2 / g and above and 250m 2 Silica particles (hereinafter referred to as fine silica) of 100 g or less are present. The fine silica of component (C3) can reduce melt viscosity, thereby reducing flash while maintaining fluidity. The specific surface area of ​​silica can be measured using a specific surface area measuring device and the BET single-point method utilizing nitrogen adsorption.

[0056] The specific surface area of ​​component (C3) can be 180m 2 / g or above and 220m 2 / g or less.

[0057] The shape of the component (C3) is not particularly limited, and may be spherical.

[0058] By combining component (C3) with components (C1) and (C2), a multimodal particle size distribution with a wide distribution range is achieved, thereby approaching a close-packed structure with few voids and reducing the apparent volume filling ratio. This allows the epoxy resin composition to maintain flowability and improve thermal conductivity without compromising narrow-area filling properties.

[0059] Furthermore, since the component (C3) has high affinity with a coupling agent described later, the mechanical strength of the resin composition is improved.

[0060] Furthermore, component (C3) has lower thermal conductivity than components (C1) and (C2), allowing it to transfer externally applied heat into the resin without dissipating it. Consequently, component (C3) can reduce melt viscosity, improve fluidity, and effectively reduce wire runout.

[0061] The amount of component (C3) can be 0.1 to 2% by mass, or 0.3 to 1% by mass, relative to the total amount of components (C1) and (C2). Setting the amount of component (C3) to 0.1% by mass or greater can reduce flash caused by mold leakage. Setting the amount of component (C3) to 2% by mass or less can achieve sufficient fluidity, reduce wire deviation, and improve filling properties in narrow areas.

[0062] <(D) Curing accelerator>

[0063] The component (D) can be used without particular limitation as long as it is a component commonly used as a curing accelerator for epoxy resins. Examples of the component (D) include amide compounds, phosphorus compounds, imidazole compounds, and urea compounds.

[0064] Component (D) may be a latent curing accelerator that makes the activation of the curing accelerator latent. By using a latent curing accelerator, the curing reaction in the mold at high temperature is delayed, which can reduce the wire deviation during the resin flow process and improve the filling property.

[0065] Examples of the amide compound include dicyandiamide and polyamide-amine (products obtained by reacting aliphatic dicarboxylic acids such as succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, and azelaic acid, carboxylic acid compounds such as fatty acids and dimer acids, with aliphatic polyamines, polyamines having a polyoxyalkylene chain, and the like).

[0066] Examples of the phosphorus compound include primary phosphines such as alkylphosphines such as ethylphosphine and butylphosphine, and phenylphosphine; dialkylphosphines such as dimethylphosphine and dipropylphosphine; secondary phosphines such as diphenylphosphine and methylethylphosphine; and tertiary phosphines such as trimethylphosphine, triethylphosphine and triphenylphosphine.

[0067] Examples of the imidazole compound include imidazole, methylimidazole, and ethylimidazole.

[0068] Examples of the urea compound include aromatic dimethylurea compounds (p-chlorophenyl-N,N-dimethylurea, 3-phenyl-1,1-dimethylurea, 3-(3,4-dichlorophenyl)-N,N-dimethylurea, and N-(3-chloro-4-methylphenyl)-N',N'-dimethylurea).

[0069] Examples of latent curing accelerators include solid-dispersible latent curing accelerators. A solid-dispersible latent curing accelerator is a compound that is solid and insoluble in epoxy resin at room temperature (25°C), becomes soluble upon heating, and functions as a curing accelerator for the epoxy resin. Examples include, but are not limited to, tertiary amine compounds, imidazole compounds that are solid at room temperature, and solid-dispersible amine adduct-based latent curing accelerators. Specific examples of tertiary amine compounds include dimethyl urea compounds such as U-CAT3512T (manufactured by San Apro Co., Ltd.) and U-CAT3513N (manufactured by San Apro Co., Ltd.). Examples of solid-dispersible amine adduct-based latent curing accelerators include reaction products of amine compounds and epoxy compounds (amine-epoxy adducts), and reaction products of amine compounds with isocyanate compounds or urea compounds (urea-type adducts). Among these, solid-dispersible amine adduct-based latent curing accelerators are preferred.

[0070] (D) The curing accelerator may be used alone or in combination of two or more.

[0071] The content of the curing accelerator (D) may be 0.05 to 2 mass %, 0.1 to 1 mass %, or 0.1 to 0.5 mass % relative to 100 mass % of the total of (A) epoxy resin, (B) curing agent, (C) inorganic filler, and (D) curing accelerator.

[0072] <Additives>

[0073] In addition to the above components, the epoxy resin composition of the present disclosure may contain additives such as coupling agents, release agents (synthetic wax, natural wax, higher fatty acid, metal salt of higher fatty acid, etc.), colorants (carbon black, cobalt blue, etc.), modifiers (silicone oil, silicone rubber, etc.), hydrotalcites, and ion scavengers, as needed, within the scope that does not impair the effects of the present disclosure. Each of these additives may be used alone, or two or more may be mixed and used.

[0074] As the coupling agent, epoxysilane-based, aminosilane-based, urea-based, vinylsilane-based, alkylsilane-based, organic titanate-based, aluminum alcoholate-based, etc. can be used. From the viewpoints of flame retardancy and curability, aminosilane-based coupling agents can be used, for example, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropylmethyldimethoxysilane, 3-aminopropylmethyldiethoxysilane, 3-phenylaminopropyltrimethoxysilane, etc.

[0075] In the epoxy resin composition of the present disclosure, the contents of (A) epoxy resin, (B) curing agent, (C) inorganic filler and (D) curing accelerator can be 90 to 100 mass%, 95 to 99 mass%, or 98 to 99.9 mass%, and the amount of the above additives can be 10 mass% or less, 1 to 5 mass%, or 0.1 to 2 mass%.

[0076] <Method for preparing resin composition>

[0077] The shape of the epoxy resin composition of the present disclosure can be selected according to the molding method of the epoxy resin composition, and examples thereof include particle shapes such as powder, tablet, and granule; and sheet shapes.

[0078] The epoxy resin composition disclosed herein can be obtained by the following method: pre-mixing components (A) to (D) and various additives such as additives as needed using a mixer, etc., and then kneading them using a disperser, a kneader, a three-roll mill, etc., followed by cooling and solidification, and crushing them into appropriate sizes. In addition, it is also possible to form the epoxy resin composition after crushing to obtain a granular or sheet-like epoxy resin composition. For example, it is also possible to press-form the epoxy resin composition into a cylindrical shape to obtain a tablet-like epoxy resin composition. In addition, for example, a vacuum extruder can be used to obtain a sheet-like epoxy resin composition. In addition, the obtained epoxy resin composition can also be appropriately adjusted in terms of dispersion, fluidity, etc.

[0079] [Physical Properties of Epoxy Resin Composition]

[0080] The spiral flowability of the epoxy resin composition disclosed herein may be 100 cm or more, 130 cm or more, or 150 cm or more.

[0081] The thermal conductivity of the cured product of the epoxy resin composition of the present disclosure may be 3.7 W / (m·K) or higher, 3.9 W / (m·K) or higher, or 4.0 W / (m·K) or higher.

[0082] The above-mentioned physical property values ​​can be measured by the methods described in the examples.

[0083] [Semiconductor devices]

[0084] Specific examples of semiconductor devices include: TCPs (Tape Carrier Packages) in which a semiconductor chip is encapsulated with the epoxy resin composition of the present disclosure; COB (Chip On Board) modules in which semiconductor chips, active components such as transistors, diodes, and thyristors, and / or passive components such as capacitors, resistors, and coils, connected to wiring formed on a wiring board or glass by wire bonding, flip-chip bonding, soldering, or the like, are encapsulated with the epoxy resin composition of the present disclosure; hybrid integrated circuits; multi-chip modules; and BGAs (Ball Grid Arrays) and CSPs (Chip Size Packages) in which components are mounted on the surface of an organic substrate having wiring board connection terminals formed on the back surface, connected to wiring formed on the organic substrate by bumping or wire bonding, and then encapsulated with the epoxy resin composition of the present disclosure. Furthermore, the epoxy resin composition of the present disclosure can also be effectively used in printed wiring boards.

[0085] The encapsulation method using the epoxy resin composition of the present disclosure is not particularly limited, and encapsulation can be performed by compression molding, low-pressure transfer molding, injection molding, cast molding, or the like.

[0086] In the case of compression molding, a substrate with a semiconductor component mounted thereon is supplied to the upper mold of the molding die, and the epoxy resin composition of the present disclosure is supplied to the cavity of the lower mold. Next, the upper and lower molds are clamped at the required clamping pressure, and the semiconductor component is immersed in the resin composition heated and melted in the cavity of the lower mold. Then, the resin composition heated and melted in the cavity of the lower mold is pressed against the cavity bottom member, and the required pressure is applied under reduced pressure to perform compression molding. The molding conditions can be a temperature of 120 to 200°C and a pressure of 2 to 20 MPa.

[0087] In transfer molding, a substrate carrying a semiconductor element is placed in a transfer molding mold. In this state, the epoxy resin composition of the present disclosure is heated to melt and then injected into the mold. Within the mold, the epoxy resin composition is further heated to solidify. Thus, a packaging material containing the epoxy resin composition of the present disclosure is obtained. The mold is then opened and removed from the mold, thereby obtaining a packaged semiconductor device.

[0088] In the case of transfer molding, for example, the injection pressure may be in the range of 2 to 20 MPa, the mold temperature may be in the range of 120 to 200° C., and the heating time may be in the range of 30 seconds to 300 seconds.

[0089] In addition, to reduce the amount of unreacted functional groups in the encapsulation material, the encapsulated semiconductor device can be post-cured. Post-curing is typically performed by heating the semiconductor device in an oven after it is removed from the mold. When post-curing the encapsulated semiconductor device, the oven temperature can be in the range of 120-200°C, and the heating time can be in the range of 1-12 hours.

[0090] The type of semiconductor component encapsulated using the epoxy resin composition of the present disclosure is not particularly limited. The semiconductor component may be a resin-encapsulated semiconductor device having a thickness of 0.1 to 4.5 mm. Specifically, the component may be an FBGA (fine pitch ball grid array) in which a substrate and a chip are connected by wire bonding, a CSP (chip size package) in which a substrate and a chip are connected using solder balls, or a SiP (system in package) in which multiple semiconductor elements are encapsulated.

[0091] By molding using the epoxy resin composition disclosed herein, which can provide a packaging material with high thermal conductivity and good narrow portion filling properties, a semiconductor device that meets requirements for miniaturization, thinness, high functionality, high integration, and high speed can be obtained.

[0092] Example

[0093] Next, specific examples of the present disclosure will be described, but the present disclosure is not limited to these examples.

[0094] The materials used in the following Examples and Comparative Examples are shown in Table 1. In Table 2, blank columns indicate that no materials were mixed.

[0095] Table 1

[0096]

[0097] (Example 1)

[0098] An epoxy resin composition was obtained by mixing 6.51% by mass of (A) epoxy resin, 3.03% by mass of (B) curing agent, 28% by mass of (C1) alumina particles, 61% by mass of (C2) alumina particles, 0.5% by mass of (C3) finely divided silica, 0.2% by mass of an ion scavenger, 0.45% by mass of a coupling agent, 0.25% by mass of a colorant, 0.30% by mass of a curing accelerator, and 0.25% by mass of a wax at room temperature, followed by heating and kneading at 100°C.

[0099] (Examples 2 to 6 and Comparative Examples 1 to 5)

[0100] Except having set the kind and compounding amount of each component as described in Table 2, the same method as Example 1 was carried out to obtain an epoxy resin composition.

[0101] The epoxy resin compositions obtained in the above-mentioned Examples and Comparative Examples were evaluated for various properties by the methods described below.

[0102] Table 2 shows the evaluation results.

[0103] <Epoxy resin composition>

[0104] Spiral flow

[0105] The epoxy resin composition was transfer molded under the conditions of a mold temperature of 175°C, an injection pressure of 9.8 MPa, and a curing time of 150 seconds, and the spiral flow (flow distance (cm) of the resin composition) was measured. The spiral flow value can be used to evaluate fluidity and narrow-end filling properties. The larger the spiral flow value, the better the fluidity and narrow-end filling properties.

[0106] In the present disclosure, a spiral flow rate of 100 cm or more is judged as acceptable.

[0107] (2) Gel time

[0108] According to the gelation time method A specified in 7.5.1 of JIS C 2161, about 1 g of the epoxy resin composition was applied on a hot plate at 175° C. and stirred with a stirring rod. The time (s) until the composition became gel and could no longer be stirred was measured.

[0109] (3) Viscosity

[0110] A Koka flow tester (Shimadzu Corporation, CFT-500C) was used with nozzle length 1.0 mm, nozzle diameter 0.5 mm, temperature 175°C, load pressure 10 kgf / cm 2 The melt viscosity (Pa·s) was measured under the condition of 0.98 MPa.

[0111] In Comparative Example 1, the viscosity was too high and the melt viscosity could not be measured.

[0112] (4) Overflow

[0113] The epoxy resin composition was transfer molded under the conditions of a mold temperature of 175° C., an injection pressure of 9.8 MPa, and a curing time of 150 seconds, and the length of the epoxy resin composition entering a 10 μm slit pre-processed in the mold was measured.

[0114] In Comparative Example 1, transfer molding could not be performed under the above conditions.

[0115] (5) Thermal conductivity

[0116] The epoxy resin composition was molded into a disc-shaped test piece (diameter 100 mm, thickness 2 mm) under the conditions of a mold temperature of 175°C and a curing time of 3 minutes. The thermal conductivity (W / (m·K)) was measured using a rapid thermal conductivity meter (manufactured by Kyoto Electronics Co., Ltd., product name: TPS-500S).

[0117] A thermal conductivity of 3.7 or higher was judged as acceptable.

[0118] In Comparative Example 1, a molded product could not be produced under the above conditions.

[0119] Table 2

[0120]

[0121] From the above, it was confirmed that the configuration disclosed herein can provide an epoxy resin composition capable of obtaining a sealing material having a high thermal conductivity of 3.7 W / (m·K) or higher and having good narrow portion filling properties.

[0122] Industrial Applicability

[0123] The epoxy resin composition of the present disclosure can also be suitably used as a semiconductor packaging material requiring high thermal conductivity, specifically, a thermal conductivity of 3.7 W / (m·K) or higher, and can also be suitably used in semiconductor devices using a flip-chip connection method.

Claims

1. An epoxy resin composition comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler, wherein: The content of the (C) inorganic filler is 85% by mass or more and less than 92% by mass relative to the total mass of the epoxy resin composition. The (C) inorganic filler comprises (C1) alumina particles having an average particle size of 0.1 μm or more and 0.9 μm or less and (C2) alumina particles having an average particle size of 5 μm or more and 50 μm or less. The (C1) alumina particles have an α-phase content of 70% or more.

2. The epoxy resin composition according to claim 1, wherein The total content of the (C1) alumina particles and the (C2) alumina particles is 95% by mass or more relative to the total mass of the (C) inorganic filler.

3. The epoxy resin composition according to claim 1 or 2, wherein The average circularity of the (C1) aluminum oxide particles and the average circularity of the (C2) aluminum oxide particles are both 0.8 or more.

4. The epoxy resin composition according to any one of claims 1 to 3, wherein The content ratio of the (C1) aluminum oxide particles to the (C2) aluminum oxide particles, that is, C1:C2, is 1:8 or more and 1:1 or less in terms of mass ratio.

5. The epoxy resin composition according to any one of claims 1 to 4, wherein The maximum particle size of the (C2) aluminum oxide particles is 15 μm or more and 75 μm or less.

6. The epoxy resin composition according to any one of claims 1 to 5, wherein The (C) inorganic filler further comprises (C3) having a specific surface area of ​​150 m 2 / g and above and 250m 2 / g or less of silica particles.

7. The epoxy resin composition according to any one of claims 1 to 6, wherein The epoxy resin composition further contains (D) a latent curing accelerator.

8. The epoxy resin composition according to any one of claims 1 to 7, wherein The (A) epoxy resin includes a crystalline epoxy resin.

9. A semiconductor device, wherein: The present invention comprises a cured product of the epoxy resin composition according to any one of claims 1 to 8.

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