Infiltratable flank packaging substrate structure, manufacturing method thereof, equipment and medium

Abstract

The invention discloses an infiltratable side wing packaging substrate structure, a manufacturing method thereof, equipment and a medium, and relates to the technical field of packaging substrates. The method comprises the following steps: preparing a bearing plate; manufacturing a first copper column on the surface of the bearing plate; pressing a first dielectric material on the surface of the bearing plate to form a first dielectric layer; manufacturing a second copper column on the surface of the first copper column; pressing a second dielectric material on the surface of the first dielectric layer to form a second dielectric layer; manufacturing a cavity in the second dielectric layer; removing the bearing plate to form a substrate; a first circuit layer is manufactured on the side, away from the second dielectric layer, of the first dielectric layer; the first circuit layer is conducted with the first copper column; a second circuit layer is manufactured on the side, away from the first dielectric layer, of the second dielectric layer and the inner wall of the cavity, and the second circuit layer is conducted with the second copper column; and carrying out surface treatment and cutting on the substrate to form the infiltratable flank packaging substrate structure. According to the manufacturing method of the embodiment of the invention, the packaging cost can be reduced, and the product performance can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of packaging substrates, in particular to a side wing infiltrable packaging substrate structure and a manufacturing method, device and medium thereof. BACKGROUND

[0002] In the semiconductor packaging technology, whether it is a bump flip-chip packaging technology based on metal bumps (also known as bumps) or a packaging technology based on pin mounting and insertion, wire bonding, etc., it is necessary to arrange metal bumps or leads on the chip as electrical connection points connected to the lead frame or IC substrate. In the process of electrical signal transmission, the lengthening of the transmission distance and the existence of parasitic inductance between the leads will cause high loss and high delay, and will also make the packaging size unable to be miniaturized. With the increase of the number of I / O, the packaging method of wire bonding cannot meet the packaging demand, and the packaging structure with a certain area also limits the increase of the number of solder balls on the substrate. At present, the solution to this problem is to arrange a redistribution layer on the wafer to increase the spacing to manufacture new electrical contacts, thereby forming a BGA or LGA package, but this will cause the product yield to decrease and the packaging cost to increase. Moreover, since the pads of the package are located at the bottom of the package, the device can only be mounted on the printed vertical packaging module in a surface mounting manner, and the device heat dissipation needs to be conducted downward through the circuit or actively dissipated from the back of the device, which cannot be applied to the scene of side vertical assembly, thereby failing to meet the multi-directional transceiving function demand of special semiconductor special devices. SUMMARY

[0003] The present application aims to at least solve one of the technical problems existing in the prior art. To this end, the present application provides a side wing infiltrable packaging substrate structure and a manufacturing method, device and medium thereof, which can reduce the packaging cost and avoid the problems of high loss and high delay existing in the traditional wire bonding method.

[0004] In one aspect, the manufacturing method of the side wing infiltrable packaging substrate structure according to the embodiments of the present application comprises the following steps:

[0005] Preparation of a carrier plate;

[0006] Manufacture of a first copper column on the surface of the carrier plate;

[0007] Pressing a first medium material on the surface of the carrier plate to form a first medium layer; the surface of the first medium layer is flush with the surface of the first copper column;

[0008] Manufacture of a second copper column on the surface of the first copper column;

[0009] Pressing a second medium material on the surface of the first medium layer to form a second medium layer; the surface of the second medium layer is flush with the surface of the second copper column;

[0010] making a cavity in the second dielectric layer;

[0011] removing the carrier plate to form a substrate;

[0012] making a first circuit layer on a side of the first dielectric layer away from the second dielectric layer; the first circuit layer is in conductive communication with the first copper pillar;

[0013] making a second circuit layer on a side of the second dielectric layer away from the first dielectric layer and on an inner wall of the cavity; the second circuit layer is in conductive communication with the second copper pillar;

[0014] performing surface treatment and cutting on the substrate to form a wickable side wing package substrate structure.

[0015] According to some embodiments of the present application, the carrier plate comprises a core layer, a first metal layer, a second metal layer, an etching barrier layer and a first metal seed layer which are sequentially arranged on a surface of the core layer; the first metal layer and the second metal layer are separable from each other.

[0016] According to some embodiments of the present application, the pressing of the first dielectric material on the surface of the carrier plate to form the first dielectric layer comprises:

[0017] pressing the first dielectric material on the surface of the carrier plate; the first dielectric material is PP material or ABF material;

[0018] grinding the first dielectric material to form the first dielectric layer with a surface flush with a surface of the first copper pillar.

[0019] According to some embodiments of the present application, the second dielectric material is a photosensitive dielectric material; the making of the cavity in the second dielectric layer comprises:

[0020] exposing and developing the second dielectric layer to form the cavity;

[0021] baking and solidifying the second dielectric layer and performing plasma cleaning.

[0022] According to some embodiments of the present application, the removing of the carrier plate to form the substrate comprises:

[0023] separating the first metal layer and the second metal layer, removing the core layer and the first metal layer;

[0024] etching the second metal layer, the etching barrier layer and the first metal seed layer to obtain the substrate.

[0025] According to some embodiments of the present application, the surface treatment and cutting of the substrate to form the wickable side wing package substrate structure comprises:

[0026] forming a solder resist layer on the surface of the substrate;

[0027] forming a protective layer on the surface of the exposed first circuit layer and the second circuit layer;

[0028] cutting the substrate along the inner part of the cavity to form the wickable side wing package substrate structure.

[0029] According to some embodiments of the present application, the first copper column formed on the surface of the carrier plate comprises:

[0030] attaching a photosensitive dry film on the surface of the carrier plate;

[0031] exposing and developing the photosensitive dry film to form a pattern corresponding to the first copper column;

[0032] electroplating the carrier plate to form the first copper column at the pattern;

[0033] removing the photosensitive dry film.

[0034] In another aspect, the wickable side wing package substrate structure according to embodiments of the present application is manufactured by the manufacturing method of the wickable side wing package substrate structure according to embodiments of the present application.

[0035] In another aspect, the electronic device according to embodiments of the present application comprises at least one control processor and a memory connected in communication with the at least one control processor; the memory stores instructions executable by the at least one control processor, and the instructions are executed by the at least one control processor to enable the at least one control processor to execute the manufacturing method of the wickable side wing package substrate structure according to embodiments of the present application.

[0036] In another aspect, the computer readable storage medium according to embodiments of the present application stores computer executable instructions for causing a computer to execute the manufacturing method of the wickable side wing package substrate structure according to embodiments of the present application.

[0037] The package substrate with a groove, the manufacturing method, the device and the medium according to the embodiment of the present application have at least the following beneficial effects: the first medium layer and the second medium layer are pressed on the carrier plate to form a carrier structure of the infiltrable side wing package substrate structure, the first copper column and the second copper column are formed in the first medium layer and the second medium layer to realize the conduction connection of the first circuit layer and the second circuit layer; the cavity is manufactured in the second medium layer, the second circuit layer is formed on the inner wall of the cavity, and finally the cavity is cut to form the infiltrable side wing package substrate structure; the infiltrable side wing package substrate structure can significantly improve the soldering reliability and the detection efficiency by forming the metallized solderable structure (the second circuit layer on the inner wall of the cavity) on the side surface, the side wing metallized structure enables the soldering tin to climb along the package side surface to form a "meniscus-shaped" three-dimensional soldering point (the traditional soldering point is only a two-dimensional connection on the bottom surface), and the shear strength is improved by more than 40%; the side wing soldering reflection surface enables the 2D / 3D AOI to identify the soldering point profile; the package mode can avoid the high loss and high delay caused by the lengthened transmission distance and the parasitic inductance between the lead wires in the traditional lead bonding mode, and can reduce the package cost and the process flow. The infiltrable side wing package substrate structure can define the size of the infiltrable side wing by exposing and developing the second medium layer to form the cavity, has higher size precision, and can improve the indentation, etching perforation and other problems of the infiltrable side wing package substrate structure, and improve the quality.

[0038] Additional aspects and advantages of the present application will be described in the following description, will become part as some will be obvious from the following description, or will be learned by practice of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0039] The above and / or additional aspects and advantages of the present application will become apparent and more readily appreciated from the following description, taken in conjunction with the following drawings, in which:

[0040] Figure 1 The step flow chart of the manufacturing method of the infiltrable side wing package substrate structure according to the embodiment of the present application;

[0041] Figure 2 The structure schematic diagram of the carrier plate according to the embodiment of the present application;

[0042] Figure 3 The structure schematic diagram of the carrier plate after the first copper column is manufactured according to the embodiment of the present application;

[0043] Figure 4 The structure schematic diagram of the carrier plate after the first medium layer is pressed on the surface of the carrier plate according to the embodiment of the present application;

[0044] Figure 5 The structure schematic diagram of the carrier plate after the second copper column is manufactured on the surface of the first copper column according to the embodiment of the present application;

[0045] Figure 6 Fig. 6 is a schematic diagram of a structure after a second dielectric layer is pressed on a surface of a first dielectric layer according to an embodiment of the present application;

[0046] Figure 7 Fig. 7 is a schematic diagram of a structure of a substrate according to an embodiment of the present application;

[0047] Figure 8 Fig. 8 is a schematic diagram of a structure after a first circuit layer and a second circuit layer are made on a substrate according to an embodiment of the present application;

[0048] Figure 9 Fig. 9 is a schematic diagram of a structure after a substrate is surface treated according to an embodiment of the present application;

[0049] Figure 10 Fig. 10 is a schematic diagram of a structure of a wickable flanking package substrate according to an embodiment of the present application;

[0050] Reference signs:

[0051] The carrier plate 100, the core layer 110, the first metal layer 120, the second metal layer 130, the etching barrier layer 140, the first metal seed layer 150, the first copper column 200, the first dielectric layer 300, the second copper column 400, the second dielectric layer 500, the cavity 510, the substrate 600, the first circuit layer 700, the second circuit layer 800, the solder resist layer 900, the protective layer 1000, and the wickable flanking package substrate 1100. DETAILED DESCRIPTION

[0052] The embodiments of the present application are described in detail below with reference to the accompanying drawings. The embodiments described below are examples for explaining the present application and are not intended to limit the present application. The step numbers in the following embodiments are set only for facilitating the description and do not limit the order between the steps. The execution order of each step in the embodiments can be adaptively adjusted according to the understanding of those skilled in the art.

[0053] In the description of the present application, it should be understood that the orientation description, such as the orientation or position relationship indicated by up, down, front, back, left, right, etc. is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0054] The terms "first", "second", "third", and "fourth" and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. Furthermore, the terms "comprising", "including", "containing", and "having" and the like are used inclusively and not exclusivel y. That is, a process, method, article, or apparatus that comprises, includes, contains, or has a list of elements is not necessarily limited to only those elements but can include other elements not expressly listed or inherent to such process, method, article, or apparatus.

[0055] Reference throughout this specification to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. Appearances of the phrase "an embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly contemplated that embodiments described herein can be combined with each other, even though some embodiments are not explicitly described or illustrated to be combinable.

[0056] In semiconductor packaging technology, whether it is bump flip-chip packaging technology based on metal bumps (also known as bumps) or packaging technology based on pin mounting and insertion, wire bonding, etc., it is necessary to arrange metal bumps or leads on the chip as electrical connection points connected to the lead frame or IC substrate. During the conduction of electrical signals, the lengthening of the transmission distance and the existence of parasitic inductance between leads will cause high loss and high delay, and will also make the packaging size unable to be miniaturized. With the increase of I / O number, the packaging method of wire bonding cannot meet the packaging demand, and the packaging structure with a certain area also limits the increase of the number of solder balls on the substrate. At present, the solution to this problem is to arrange a redistribution layer on the wafer to increase the spacing to manufacture new electrical contacts, thereby forming a BGA or LGA package, but this will cause the product yield to decrease and the packaging cost to increase. Moreover, since the pads of the package are located at the bottom of the package, the device can only be installed on the printed vertical packaging module by surface mounting, and the device heat dissipation needs to be conducted downward through the circuit or actively dissipated from the back of the device, which cannot be applied to the scene of side vertical assembly, thereby cannot meet the multi-directional transceiving function demand of special semiconductor special devices.

[0057] To solve the above problems, the embodiment of the present application provides a kind of infiltrable wing package substrate structure and its manufacturing method, equipment and medium, by pressing first dielectric layer and second dielectric layer on carrier plate, the carrier structure of infiltrable wing package substrate structure is formed, by forming first copper column and second copper column in first dielectric layer and second dielectric layer, the conduction connection of first circuit layer and second circuit layer is realized;By manufacturing cavity in second dielectric layer, and forming second circuit layer on the inner wall of cavity, finally cutting cavity, form infiltrable wing package substrate structure, the infiltrable wing package substrate structure can significantly improve the welding reliability and detection efficiency by forming metallized solderable structure (i.e. the second circuit layer of the inner wall of cavity) on side face, wing metallization structure makes soldering tin climb along the package side, form "meniscus shape" three-dimensional solder joint (traditional solder joint is only bottom surface two-dimensional connection), shear strength is improved by more than 40%;2D / 3D AOI can identify solder joint profile by wing soldering reflection surface;The packaging mode can avoid the high loss and high delay caused by the lengthening of transmission distance and the existence of parasitic inductance between lead wires in the process of traditional lead bonding mode, while reducing packaging cost and process flow.The infiltrable wing package substrate structure can define the size of infiltrable wing by exposing and developing second dielectric layer to form cavity, with higher size precision, and can improve the indentation, etching perforation and other problems of infiltrable wing package substrate structure, and improve quality.

[0058] The infiltrable wing package substrate structure and its manufacturing method, equipment and medium of the embodiment of the present application will be described in detail below with reference to the drawings.

[0059] In one aspect, as Figure 1 The manufacturing method of the infiltrable wing package substrate structure according to the embodiment of the present application includes but is not limited to steps S100-S1000:

[0060] Step S100: prepare carrier plate 100;

[0061] Specifically, carrier plate 100 is used to manufacture the carrier structure of infiltrable wing package substrate structure 1100, and carrier plate 100 needs to be removed subsequently. In order to facilitate the removal of carrier plate 100 subsequently, in the present example, as Figure 2As shown, the carrier plate 100 includes a core layer 110, a first metal layer 120, a second metal layer 130, an etching barrier layer 140 and a first metal seed layer 150 which are sequentially stacked on the surface of the core layer 110; the first metal layer 120 and the second metal layer 130 can be separated from each other. It should be noted that the first metal layer 120, the second metal layer 130, the etching barrier layer 140 and the first metal seed layer 150 can be arranged on the upper surface or the lower surface of the core layer 110, or arranged on the upper and lower surfaces of the core layer 110 at the same time, and if arranged on the upper and lower surfaces of the core layer 110 at the same time, the infiltrable side wing package substrate structure 1100 can be simultaneously manufactured on the upper and lower surfaces of the core layer 110. For the convenience of description, the following description is based on the case that the first metal layer 120, the second metal layer 130, the etching barrier layer 140 and the first metal seed layer 150 are arranged on the upper surface of the core layer 110. The first metal layer 120 and the second metal layer 130 are combined by a physical method, and the two can be separated from each other, thereby facilitating the removal of the core layer 110. The etching barrier layer 140 plays a role of preventing over-etching, avoiding the destruction of the circuit and the copper column of the infiltrable side wing package substrate structure 1100. The first metal seed layer 150 serves as a conductive basis for the electroplating process, facilitating the subsequent manufacturing of the copper column.

[0062] Step S200: manufacturing a first copper column 200 on the surface of the carrier plate 100;

[0063] Specifically, in the present example, in order to manufacture the first copper column 200 on the surface of the carrier plate 100, the following method can be used: attaching a photosensitive dry film to the surface of the first metal seed layer 150, exposing and developing the photosensitive dry film to form a pattern corresponding to the first copper column 200; then, forming the first copper column 200 by electroplating, and the photosensitive dry film plays a role of preventing the remaining positions on the surface of the carrier plate 100 from being electroplated. After electroplating is completed, the photosensitive dry film is removed. As shown in Figure 3 The first copper column 200 is used to subsequently conduct the circuit on the upper and lower surfaces of the infiltrable side wing package substrate structure 1100.

[0064] Step S300: laminating a first dielectric material on the surface of the carrier plate 100 to form a first dielectric layer 300; the surface of the first dielectric layer 300 is flush with the surface of the first copper column 200;

[0065] Specifically, in the present example, the first dielectric material can be a Prepreg material (semi-cured sheet) or an ABF material (Ajinomoto Build-up Film) or the like insulating medium. The first dielectric layer 300 plays a role of insulation and support. In the present example, step S300 specifically includes the following two steps:

[0066] Step S310: press the first dielectric material on the surface of the carrier plate 100; the first dielectric material is PP material or ABF material;

[0067] Step S320: grind the first dielectric material to form the first dielectric layer 300 with the surface flush with the surface of the first copper pillar 200.

[0068] It should be noted that when the first dielectric layer 300 is pressed, the first dielectric layer 300 completely covers the first copper pillar 200, and then the first dielectric layer 300 needs to be ground to remove the part of the first dielectric layer 300 beyond the surface of the first copper pillar 200, so that the surface of the first dielectric layer 300 is flush with the surface of the first copper pillar 200, and the surface of the first copper pillar 200 is exposed, as shown in Figure 4 .

[0069] Step S400: make the second copper pillar 400 on the surface of the first copper pillar 200;

[0070] Specifically, in this example, in order to make the second copper pillar 400 on the surface of the first copper pillar 200, the following method can be used: attach a photosensitive dry film on the surface of the first dielectric layer 300, expose and develop the photosensitive dry film to form a pattern corresponding to the second copper pillar 400; then, form the second copper pillar 400 by electroplating, and the photosensitive dry film plays a role in preventing the rest of the surface of the first dielectric layer 300 from being electroplated. After electroplating is completed, the photosensitive dry film is removed. As shown in Figure 5 , the first copper pillar 200 and the second copper pillar 400 are used to subsequently conduct the circuit on the upper and lower surfaces of the infiltrable side wing packaging substrate structure 1100.

[0071] Step S500: press the second dielectric material on the surface of the first dielectric layer 300 to form the second dielectric layer 500; the surface of the second dielectric layer 500 is flush with the surface of the second copper pillar 400;

[0072] Specifically, in this example, the second dielectric material needs to be a photoimageable dielectric, such as PVF, etc., to facilitate the subsequent making of the cavity 510 in the second dielectric layer 500. When the second dielectric layer 500 is pressed, the second dielectric layer 500 completely covers the second copper pillar 400, and then the second dielectric layer 500 needs to be ground to remove the part of the second dielectric layer 500 beyond the surface of the second copper pillar 400, so that the surface of the second dielectric layer 500 is flush with the surface of the second copper pillar 400, and the surface of the second copper pillar 400 is exposed, as shown in Figure 6 .

[0073] Step S600: make the cavity 510 in the second dielectric layer 500;

[0074] Specifically, since the second dielectric layer 500 is a photosensitive material, the second dielectric layer 500 can be directly exposed and developed to form the cavity 510. It should be noted that if the second dielectric layer 500 is made of other types of insulating materials, the cavity 510 can also be formed in the second dielectric layer 500 by mechanical drilling or laser drilling, etc. In the present example, step S600 specifically includes:

[0075] Step S610: Exposing and developing the second dielectric layer 500 to form the cavity 510;

[0076] Step S620: Baking and curing the second dielectric layer 500 and performing plasma cleaning.

[0077] Specifically, after the cavity 510 is formed by exposure and development, the second dielectric layer 500 needs to be baked and cured to remove the moisture absorbed in the second dielectric layer 500 and enhance the strength of the second dielectric layer 500; and then the second dielectric layer 500 is subjected to plasma cleaning to remove contaminants on the second dielectric layer 500, thereby improving product quality.

[0078] Step S700: Removing the carrier plate 100 to form the substrate 600;

[0079] As shown in Figure 6 , after the cavity 510 is completed, the carrier plate 100 needs to be removed, leaving only the substrate 600, wherein the substrate 600 includes the first copper pillar 200, the first dielectric layer 300, the second copper pillar 400, the second dielectric layer 500 and the cavity 510. In order to remove the carrier plate 100, step S700 includes the following two steps:

[0080] Step S710: Separating the first metal layer 120 and the second metal layer 130 to remove the core layer 110 and the first metal layer 120;

[0081] Step S720: Etching the second metal layer 130, the etching stop layer 140 and the first metal seed layer 150 to obtain the substrate 600.

[0082] Specifically, since the first metal layer 120 and the second metal layer 130 are combined by physical means, they can be separated. After separating the first metal layer 120 and the second metal layer 130, the first metal layer 120 and the core layer 110 are separated from the other parts, leaving the remaining substrate 600 and the second metal layer 130, the etching stop layer 140 and the first metal seed layer 150, and then etching the second metal layer 130, the etching stop layer 140 and the first metal seed layer 150 to obtain the substrate 600 as shown in Figure 6 .

[0083] Step S800: fabricate the first circuit layer 700 on the side of the first dielectric layer 300 away from the second dielectric layer 500; the first circuit layer 700 is in conductive connection with the first copper pillar 200;

[0084] Specifically, in the present example, in order to fabricate the first circuit layer 700 on the first dielectric layer 300, the following method can be adopted: form a metal seed layer on the lower surface of the first dielectric layer 300 by magnetron sputtering or chemical deposition as the conductive basis for subsequent electroplating, then attach a photosensitive dry film to the lower surface of the first dielectric layer 300 and perform exposure and development on the photosensitive dry film to form the pattern of the first circuit layer 700, then perform electroplating to form the first circuit layer 700, and finally remove the photosensitive dry film and etch away the exposed metal seed layer. The first circuit layer 700 is in contact with the first copper pillar 200, thereby being in conductive connection with each other.

[0085] Step S900: fabricate the second circuit layer 800 on the side of the second dielectric layer 500 away from the first dielectric layer 300 and on the inner wall of the cavity 610; the second circuit layer 800 is in conductive connection with the second copper pillar 400;

[0086] Specifically, in the present example, in order to fabricate the second circuit layer 800 on the upper surface of the second dielectric layer 500 and on the inner wall of the cavity 610, the following method can be adopted: form a metal seed layer on the upper surface of the second dielectric layer 500 by magnetron sputtering or chemical deposition as the conductive basis for subsequent electroplating, then attach a photosensitive dry film to the upper surface of the second dielectric layer 500 and perform exposure and development on the photosensitive dry film to form the pattern of the second circuit layer 800, then perform electroplating to form the second circuit layer 800, and finally remove the photosensitive dry film and etch away the exposed metal seed layer. The second circuit layer 800 is in contact with the second copper pillar 400, thereby being in conductive connection with each other. In this way, the first circuit layer 700 and the second circuit layer 800 can be in conductive connection through the first copper pillar 200 and the second copper pillar 400, thereby realizing the electrical performance of the infiltrable side wing packaging substrate structure 1000.

[0087] Step S1000: perform surface treatment and cutting on the substrate 600 to form the infiltrable side wing packaging substrate structure 1100.

[0088] Specifically, by performing surface treatment on the substrate 600, the circuit of the substrate 600 is protected, and then the substrate 600 is cut to form the required infiltrable side wing packaging substrate structure 1100. In the present example, step S1000 specifically includes the following three steps:

[0089] Step S1100: form a solder resist layer 900 on the surface of the substrate 600;

[0090] Step S1200: forming a protective layer 1000 on the surface of the exposed first circuit layer 700 and the second circuit layer 800;

[0091] Step S1300: cutting the substrate 600 along the inside of the cavity 610 to form the infiltrable side wing packaging substrate structure 1100.

[0092] Specifically, after cleaning the substrate 600, the ink is applied on the surface of the substrate 600 by screen printing or spraying, and then the ink is baked and cured to form the solder resist layer 900; at the same time, the solder resist layer 900 is windowed to expose part of the circuit of the first circuit layer 700 and the second circuit layer 800, and the exposed first circuit layer 700 and the second circuit layer 800 are surface treated to form the protective layer 1000, which can be nickel plating, palladium plating, gold immersion and other treatment methods.

[0093] According to the manufacturing method of the infiltrable side wing packaging substrate structure, the first dielectric layer 300 and the second dielectric layer 500 are pressed on the carrier plate 100 to form the carrier structure of the infiltrable side wing packaging substrate structure 1100, the first copper column 200 and the second copper column 400 are formed in the first dielectric layer 300 and the second dielectric layer 500 to realize the conduction connection of the first circuit layer 700 and the second circuit layer 800, the cavity 510 is manufactured in the second dielectric layer 500, the second circuit layer 800 is formed on the inner wall of the cavity 510, and finally the cavity 510 is cut to form the infiltrable side wing packaging substrate structure 1100 as shown in Figure 10 The infiltrable side wing packaging substrate structure 1100 can significantly improve the soldering reliability and detection efficiency by forming a metallized solderable structure (i.e. the second circuit layer 800 on the inner wall of the cavity 610) on the side surface, the side wing metallized structure makes the soldering tin climb along the packaging side surface to form a "meniscus-shaped" three-dimensional soldering point (the traditional soldering point is only a two-dimensional connection on the bottom surface), and the shear strength is improved by more than 40%; the side wing soldering reflection surface can identify the soldering point profile by 2D / 3D AOI; and can avoid the high loss and high delay caused by the lengthening of the transmission distance and the parasitic inductance between the leads in the traditional lead bonding mode, while reducing the packaging cost and the process flow. The infiltrable side wing packaging substrate structure 1100 forms the cavity 510 by exposing and developing the second dielectric layer 500, which can define the size of the infiltrable side wing, has higher size precision, and can improve the indentation, etching perforation and other problems of the infiltrable side wing packaging substrate, and improve the quality.

[0094] On the other hand, the embodiment of the present application also provides an infiltrable side wing packaging substrate structure, which is manufactured by the manufacturing method of the infiltrable side wing packaging substrate structure described in the above aspect embodiment.

[0095] In another aspect, the embodiments of the present application also provide an electronic device, comprising:

[0096] The processor can be implemented in a general-purpose central processing unit (CPU), a microprocessor, an application specific integrated circuit (ASIC), or one or more integrated circuits, and the like, and is configured to execute related programs to implement the technical solutions provided by the embodiments of the present application.

[0097] The memory can be implemented in a read only memory (ROM), a static storage device, a dynamic storage device, or a random access memory (RAM), and the like. The memory can store an operating system and other application programs. When the technical solutions provided by the embodiments of the present application are implemented by software or firmware, the related program codes are stored in the memory and are called and executed by the processor to implement the method for manufacturing the infiltrable side wing packaging substrate structure.

[0098] The input / output interface is configured to realize information input and output.

[0099] The communication interface is configured to realize the communication interaction between the device and other devices. The communication can be realized by a wired manner (for example, a USB, a network cable, and the like) or a wireless manner (for example, a mobile network, WIFI, Bluetooth, and the like).

[0100] The bus is configured to transmit information between various components (for example, the processor, the memory, the input / output interface, and the communication interface) of the device.

[0101] The processor, the memory, the input / output interface, and the communication interface are connected to each other through the bus to realize the communication connection between the device.

[0102] In another aspect, the embodiments of the present application also provide a storage medium, which is a computer readable storage medium. The storage medium stores a computer program. When the computer program is executed by the processor, the method for manufacturing the infiltrable side wing packaging substrate structure is realized.

[0103] Memory, as used in the foregoing description, is a non-transitory computer- readable storage medium used for storage of non-transitory software programs and non- transitory computer-executable programs. In addition, memory can include a high-speed random access memory, and can also include a non-transitory memory such as at least one disk memory device, a flash memory device, or other non-transitory solid-state memory device. In some embodiments, memory can optionally include memory that is remotely located from the processor, which can be connected to the processor through a network. Examples of the network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof. The above-described device embodiments are merely illustrative, in which the units described as separate units can or can not be physically separated, and can be implemented in one location, or can be distributed over a plurality of network units. Some or all of the modules can be selected according to actual needs to achieve the purposes of the present embodiment.

[0104] While specific embodiments are described herein, one of ordinary skill in the art will appreciate that many other modifications or alternative embodiments are within the scope of the present disclosure. For example, any of the functions and / or process capabilities described in connection with a particular device or component can be performed by any other device or component. Additionally, while various exemplary implementations and architectures have been described in accordance with embodiments of the present disclosure, one of ordinary skill in the art will recognize that many other modifications to the exemplary implementations and architectures described herein are within the scope of the present disclosure.

[0105] Certain aspects of the present disclosure are described above with reference to block and flow diagrams of systems, methods, apparatuses and / or computer program products according to example embodiments. It will be understood that one or more blocks of the block diagrams and flow diagrams, and combinations of blocks in the block diagrams and flow diagrams, can be implemented by

[0106] Accordingly, the blocks in the block diagrams and flow diagrams support combinations of means for performing the specified functions, combinations of elements or steps for performing the specified functions, and program instruction means for performing the specified functions. It will also be understood that each block of the block diagrams and flow diagrams, and combinations of blocks in the block diagrams and flow diagrams, can be implemented by dedicated hardware-based computer systems which perform the specified functions or combinations of special-purpose hardware and computer instructions.

[0107] The program modules, applications, and the like described herein can include one or more software components, including, for example, software objects, methods, data structures, and the like. Each such software component can include computer-executable instructions that, in response to execution by a computer, cause at least a portion of the functionality described herein (e.g., one or more operations of the example methods described herein) to be performed.

[0108] Software components can be encoded in any of a variety of programming languages. One example programming language can be a low-level programming language, such as an assembly language associated with a particular hardware architecture and / or operating system platform. Software components including assembly language instructions can need to be translated by an assembler into executable machine code before execution by the hardware architecture and / or platform. Another example programming language can be a higher-level programming language, which can be portable across multiple architectures. Software components including a higher-level programming language can need to be translated by an interpreter or compiler into an intermediate representation before execution. Other examples of programming languages include, but are not limited to, a macro language, a shell or command language, a job control language, a script language, a database query or search language, or a report writing language. In one or more example embodiments, a software component including instructions of one of the above examples of programming languages can be executed directly by an operating system or other software component without first being translated into another form.

[0109] Software components can be stored as files or other data storage constructs. Software components of a similar type or related function can be stored together in a particular directory, folder, or library. Software components can be static (e.g., preset or fixed) or dynamic (e.g., created or modified at execution time).

[0110] The above embodiments of the present application have been described in detail but not limited to the above-mentioned embodiments, and various changes can be made by those skilled in the art within the scope of knowledge of the art without departing from the spirit of the present application.

Claims

1. A method for manufacturing a wettable flank package substrate structure, characterized in that: The method comprises the following steps: preparing a carrier plate; forming a first copper column on the surface of the carrier plate; pressing a first dielectric material on the surface of the carrier plate to form a first dielectric layer; the surface of the first dielectric layer is flush with the surface of the first copper column; forming a second copper column on the surface of the first copper column; pressing a second dielectric material on the surface of the first dielectric layer to form a second dielectric layer; the surface of the second dielectric layer is flush with the surface of the second copper column; forming a cavity in the second dielectric layer; removing the carrier plate to form a substrate; forming a first circuit layer on the side of the first dielectric layer away from the second dielectric layer; the first circuit layer is in conduction with the first copper column; forming a second circuit layer on the side of the second dielectric layer away from the first dielectric layer and the inner wall of the cavity; the second circuit layer is in conduction with the second copper column; performing surface treatment and cutting on the substrate to form a wickable side wing package substrate structure.

2. The method of claim 1, wherein the method further comprises: The carrier plate comprises a core layer, a first metal layer, a second metal layer, an etching barrier layer and a first metal seed layer which are sequentially arranged on the surface of the core layer; the first metal layer and the second metal layer can be separated from each other.

3. The method for manufacturing a wettable flank package substrate structure according to claim 1, wherein: The step of pressing a first dielectric material on the surface of the carrier plate to form a first dielectric layer comprises: pressing a first dielectric material on the surface of the carrier plate; the first dielectric material is PP material or ABF material; grinding the first dielectric material to form a first dielectric layer whose surface is flush with the surface of the first copper column.

4. The method of claim 1, wherein the method further comprises: The second dielectric material is a photosensitive dielectric material. The step of forming a cavity in the second dielectric layer comprises: exposing and developing the second dielectric layer to form the cavity; baking and curing the second dielectric layer and performing plasma cleaning.

5. The method of claim 2, wherein the method further comprises: The step of removing the carrier plate to form a substrate comprises: separating the first metal layer and the second metal layer, removing the core layer and the first metal layer; etching the second metal layer, the etching barrier layer and the first metal seed layer to obtain the substrate.

6. The method of claim 1, wherein the method further comprises: The step of performing surface treatment and cutting on the substrate to form a wickable side wing package substrate structure comprises: forming a solder mask layer on the surface of the substrate; forming a protective layer on the surface of the exposed first circuit layer and second circuit layer; cutting the substrate along the inner part of the cavity to form a wickable side wing package substrate structure.

7. The method of claim 1, wherein the method further comprises: The step of forming a first copper column on the surface of the carrier plate comprises: attaching a photosensitive dry film on the surface of the carrier plate; exposing and developing the photosensitive dry film to form a pattern corresponding to the first copper column; electroplating the carrier plate to form the first copper column at the pattern; removing the photosensitive dry film.

8. A wettable flanked package substrate structure, comprising: The wickable side wing package substrate structure is prepared by the method of any one of claims 1-7.

9. An electronic device, comprising: comprising at least one control processor and a memory communicatively connected to the at least one control processor; the memory storing instructions executable by the at least one control processor, the instructions being executed by the at least one control processor to enable the at least one control processor to perform the method of fabricating a wettable side wing package substrate structure as claimed in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, The computer readable storage medium stores computer executable instructions for causing a computer to perform the method of fabricating a wettable side wing package substrate structure as claimed in any one of claims 1 to 7.

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