High-frequency module

Abstract

The invention provides a high-frequency module which reduces transmission loss of signals of a plurality of frequency bands. A high-frequency module is provided with: a switch (11) having a selection terminal (11b) connected to an antenna (2a), a selection terminal (11c) connected to an antenna (2b), and a common terminal (11a); a switch (12) having selection terminals (12a), (12b) and a common terminal (12f); filters (41) and (42); an inductor (21) connected to a common path connecting the common terminals (11a) and (12f); an inductor (31) connected to a signal path connecting the selection terminal (12a) and the filter (41); and an inductor (32) connected to a signal path connecting the selection terminal (12b) and the filter (42), the distance between the inductor (21) and the inductor (31) being smaller than the distance between the inductor (21) and the inductor (32).

Description

TECHNICAL FIELD

[0001] The present application relates to a high-frequency module. BACKGROUND

[0002] A front-end module is disclosed in Patent Literature 1, which has a structure in which a first inductive element connected to a signal path that transmits a signal of a low frequency band group and a second inductive element connected to a signal path that transmits a signal of a high frequency band group are electromagnetically coupled, thereby canceling a second harmonic component propagating in the signal path of the high frequency band group.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: International Publication No. 2017 / 006866 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] With the development of multi-band, a high-frequency module that reduces transmission loss of signals of multiple frequency bands is being sought.

[0008] Therefore, the present application has been achieved in order to solve the above problems, and has an object to provide a high-frequency module that reduces transmission loss of signals of multiple frequency bands.

[0009] MEANS FOR SOLVING THE PROBLEMS

[0010] In order to achieve the above object, a high-frequency module according to an embodiment of the present application includes a first switch having a first selection terminal connected to a first antenna, a second selection terminal connected to a second antenna, and a first common terminal; a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; and a third inductor connected to a second path connecting the fourth selection terminal and the second filter, wherein a distance between the first inductor and the second inductor is smaller than a distance between the first inductor and the third inductor.

[0011] Further, a high-frequency module according to one embodiment of the present application includes a first switch having a first selection terminal connected to a first antenna, a second selection terminal connected to a second antenna, and a first common terminal; a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; and a third inductor connected to a second path connecting the fourth selection terminal and the second filter, wherein an angle formed by a winding axis positive direction of the first inductor and a winding axis positive direction of the second inductor is smaller than an angle formed by the winding axis positive direction of the first inductor and a winding axis positive direction of the third inductor.

[0012] Further, a high-frequency module according to one embodiment of the present application includes a first switch having a first selection terminal connected to a first antenna, a second selection terminal connected to a second antenna, and a first common terminal; a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; a third inductor connected to a second path connecting the fourth selection terminal and the second filter; and a metal member disposed between the first inductor and the third inductor.

[0013] Effects of the Invention

[0014] According to the present application, a high-frequency module that reduces transmission loss of signals of a plurality of frequency bands can be provided. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1A is a circuit configuration diagram at the time of reception of frequency band A of a high-frequency module and a communication device according to an embodiment.

[0016] Figure 1B is a circuit configuration diagram at the time of reception of frequency band B of a high-frequency module and a communication device according to an embodiment.

[0017] Figure 1C is a circuit configuration diagram at the time of simultaneous reception of frequency band A and frequency band B of a high-frequency module and a communication device according to an embodiment.

[0018] Figure 1D is a circuit configuration diagram at the time of use of a diversity circuit of a high-frequency module and a communication device according to an embodiment.

[0019] Figure 2 is a plan view and a sectional view of a high-frequency module according to an embodiment.

[0020] Figure 3 Fig. 1 is a plan view of a high-frequency module according to Embodiment 1.

[0021] Figure 4 Fig. 2 is a plan view and a sectional view of a high-frequency module according to Modification 1 of Embodiment 1.

[0022] Figure 5A Fig. 3 is a circuit configuration diagram of the high-frequency module according to Modification 1 of Embodiment 1 at a reception frequency band A.

[0023] Figure 5B Fig. 4 is a circuit configuration diagram of the high-frequency module according to Modification 1 of Embodiment 1 at a reception frequency band B.

[0024] Figure 5C Fig. 5 is a circuit configuration diagram of the high-frequency module according to Modification 1 of Embodiment 1 at a reception frequency band C.

[0025] Figure 6 Fig. 6 is a graph showing a band-pass characteristic of a low-pass filter of the high-frequency module according to Modification 1 of Embodiment 1.

[0026] Figure 7A Fig. 7 is a circuit configuration diagram of the high-frequency module according to Modification 2 of Embodiment 1 at a transmission frequency band A.

[0027] Figure 7B Fig. 8 is a circuit configuration diagram of the high-frequency module according to Modification 2 of Embodiment 1 at a reception frequency band A.

[0028] Figure 7C Fig. 9 is a circuit configuration diagram of the high-frequency module according to Modification 3 of Embodiment 1 at a transmission frequency band A.

[0029] Figure 8 Fig. 10 is a graph showing a band-pass characteristic of a low-pass filter of the high-frequency module according to Modification 3 and Modification 4 of Embodiment 1. DETAILED DESCRIPTION

[0030] Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In addition, each of the embodiments described below indicates a general or specific example. The numerical values, shapes, materials, structural elements, arrangement of structural elements, and connection methods and the like shown in the following embodiments are one example, and the gist thereof is not intended to be limited to the present application. The elements of the following embodiments that are not recited in the independent claims are described as arbitrary elements. In addition, the size or size ratio of the elements shown in the drawings is not necessarily strict.

[0031] Furthermore, the respective drawings are schematic views in which emphasis, omission, or adjustment of scale has been appropriately made in order to illustrate the present application, and are not necessarily strictly to scale, and sometimes differ from the actual shape, positional relationship, and scale. In the respective drawings, the same reference numerals are assigned to substantially the same structures, and sometimes the repeated explanation is omitted or simplified.

[0032] In the circuit structure of the present disclosure, "connection" includes not only a case of direct connection using a connection terminal and / or a wiring conductor, but also a case of electrical connection via a matching element or a switching circuit. "Connected between A and B" means connected to both A and B between A and B.

[0033] In the present application, "terminal" means a point at which a conductor within an element ends. Furthermore, in a case where the impedance of a conductor between elements is sufficiently low, a terminal is not only interpreted as a single point, but also interpreted as an arbitrary point (node) on the conductor between elements or the entire conductor.

[0034] In addition, in the present disclosure, "signal path" and "common path" mean a transmission line constituted by a wiring that propagates a high-frequency transmission signal or a high-frequency reception signal, an electrode directly connected to the wiring, and a terminal directly connected to the wiring or the electrode.

[0035] In addition, in the circuit element arrangement of the present disclosure, "circuit element A is arranged in series on path B" means that a signal input terminal and a signal output terminal of circuit element A are connected to two wirings that constitute at least a part of path B, respectively. Furthermore, at least one of the two wirings can be an electrode or a terminal.

[0036] In addition, in the present disclosure, "viewing the substrate in plan view" means observing the substrate and the circuit elements mounted on the substrate by projecting them onto a plane parallel to the main surface of the substrate.

[0037] In addition, in the component arrangement of the present disclosure, "arranging a component on a substrate" includes a case where the component is arranged on the main surface of the substrate and a case where the component is arranged inside the substrate. "Arranging a component on the main surface of the substrate" includes not only a case where the component is arranged on the main surface of the substrate in contact with the main surface, but also a case where the component is arranged above the main surface without contact with the main surface (for example, a case where the component is layered on another component arranged on the main surface in contact with the main surface). In addition, "arranging a component on the main surface of the substrate" can include a case where the component is arranged in a recess formed in the main surface. "Arranging a component inside the substrate" includes not only a case where the component is packaged inside a module substrate, but also a case where a part of the component is not covered with the substrate although the entire component is arranged between the two main surfaces of the substrate and a case where only a part of the component is arranged inside the substrate.

[0038] In addition, in the component configuration of the present disclosure, "the winding axis positive direction coincides" does not mean only the case where the angle formed by the vector component of the winding axis positive direction is 0°, but also includes a range where the winding axis positive direction substantially coincides, for example, a case where the angle formed by the vector component of the winding axis positive direction is within ±30°.

[0039] In addition, in the following embodiments, the passband of the filter is defined as a frequency band between two frequencies that are 3 dB larger than the minimum value of the insertion loss within the passband.

[0040] In addition, in the present disclosure, "a frequency band" refers to at least one of an uplink operating frequency band and a downlink operating frequency band of a frequency band that is defined in advance by a standardization organization or the like (for example, 3GPP (registered trademark), IEEE (Institute of Electrical and Electronics Engineers), or the like) for a communication system configured using a radio access technology (RAT: Radio Access Technology). In the present embodiment, as the communication system, for example, an LTE (Long Term Evolution) system, a 5G (5th Generation)-NR (New Radio) system, a WLAN (Wireless Local Area Network) system, or the like can be used, but is not limited to these systems. Furthermore, the uplink operating frequency band of the frequency band refers to a frequency range in the frequency band that is designated for uplink. In addition, the downlink operating frequency band of the frequency band refers to a frequency range in the frequency band that is designated for downlink.

[0041] (Embodiment)

[0042] [1 Circuit structure of high-frequency module 1 and communication device 4]

[0043] Referring to Figures 1A-1D The circuit structure of the high-frequency module 1 and the communication device 4 according to the present embodiment will be described. Figure 1A is a circuit structure diagram at the time of reception of the frequency band A of the high-frequency module 1 and the communication device 4 according to the present embodiment. Figure 1B is a circuit structure diagram at the time of reception of the frequency band B of the high-frequency module 1 and the communication device 4 according to the present embodiment. Figure 1C is a circuit structure diagram at the time of simultaneous reception of the frequency band A and the frequency band B of the high-frequency module 1 and the communication device 4 according to the present embodiment. Figure 1D is a circuit structure diagram at the time of use of the diversity circuit of the high-frequency module 1 and the communication device 4 according to the present embodiment.

[0044] As Figures 1A-1DAs shown, the communication device 4 is provided with the high-frequency module 1, the antennas 2a, 2b, and 2c, and the RF signal processing circuit (RFIC: Radio Frequency Integrated Circuit) 3.

[0045] The high-frequency module 1 transmits a high-frequency signal between the antennas 2a to 2c and the RFIC 3. The detailed circuit structure of the high-frequency module 1 will be described later.

[0046] The antenna 2a is an example of a first antenna, is connected to the antenna connection terminal 101 of the high-frequency module 1, receives a high-frequency signal from the outside, and outputs the high-frequency signal to the high-frequency module 1. The antenna 2b is an example of a second antenna, is connected to the antenna connection terminal 102 of the high-frequency module 1, receives a high-frequency signal from the outside, and outputs the high-frequency signal to the high-frequency module 1. The antenna 2c is connected to the antenna connection terminal 103 of the high-frequency module 1, receives a high-frequency signal from the outside, and outputs the high-frequency signal to the high-frequency module 1. In addition, the antennas 2a to 2c can also transmit a high-frequency signal output from the high-frequency module 1 to the outside.

[0047] The RFIC 3 is an example of a signal processing circuit that processes a high-frequency signal. Specifically, the RFIC 3 performs signal processing such as frequency down-conversion on a reception signal input via a reception path of the high-frequency module 1, and outputs a reception signal generated by the signal processing to a baseband signal processing circuit (BBIC, not shown). In addition, the RFIC 3 can also perform signal processing such as frequency up-conversion on a transmission signal input from the BBIC, and output a transmission signal generated by the signal processing to a transmission path of the high-frequency module 1.

[0048] In addition, the RFIC 3 also has a function as a control section that controls connection switching of the switches 11 and 12 of the high-frequency module 1, and controls a power supply voltage and a bias voltage (current) supplied to the low-noise amplifiers 51 to 55. In addition, part or all of the function of the RFIC 3 as the control section can also be installed outside the RFIC 3, for example, in the BBIC or the high-frequency module 1.

[0049] In addition, the antennas 2a to 2c can also not be included in the communication device 4.

[0050] Next, the circuit structure of the high-frequency module 1 will be described. As shown in FIG. 1, the high-frequency module 1 includes the switches 11 and 12, the low-noise amplifiers 51 to 55, the frequency conversion circuits 61 to 65, the filters 71 to 75, and the power supply circuits 81 and 82. Figures 1A-1DAs shown, the high-frequency module 1 is provided with switches 11 and 12, filters 41, 42, 43, 44, and 45, inductors 21, 31, 32, 33, 34, and 35, capacitors 22, low-noise amplifiers 51, 52, 53, 54, and 55, a coupler 60, antenna connection terminals 101, 102, and 103, an external connection terminal 104, and signal output terminals 105, 110, 120, 130, 140, and 150.

[0051] The antenna connection terminal 101 is an example of a first antenna connection terminal, and is connected to the antenna 2a and the selection terminal 11b of the switch 11. The antenna connection terminal 102 is an example of a second antenna connection terminal, and is connected to the antenna 2b and the selection terminal 11c of the switch 11. The antenna connection terminal 103 is connected to the antenna 2c and the selection terminal 11d of the switch 11. The external connection terminal 104 is connected to the selection terminal 11e of the switch 11. The signal output terminal 105 is connected to the sub-line of the coupler 60. The signal output terminal 110 is connected to the output terminal of the low-noise amplifier 51 and the RFIC 3. The signal output terminal 120 is connected to the output terminal of the low-noise amplifier 52 and the RFIC 3. The signal output terminal 130 is connected to the output terminal of the low-noise amplifier 53 and the RFIC 3. The signal output terminal 140 is connected to the output terminal of the low-noise amplifier 54 and the RFIC 3. The signal output terminal 150 is connected to the output terminal of the low-noise amplifier 55 and the RFIC 3.

[0052] The filter 41 is an example of a first filter, and has a passband including a reception frequency band of the frequency band A. One end of the filter 41 is connected to the inductor 31, and the other end is connected to the input terminal of the low-noise amplifier 51. The filter 42 is an example of a second filter, and has a passband including a reception frequency band of the frequency band B. One end of the filter 42 is connected to the inductor 32, and the other end is connected to the input terminal of the low-noise amplifier 52. The filter 43 has a passband including a reception frequency band of the frequency band C. One end of the filter 43 is connected to the inductor 33, and the other end is connected to the input terminal of the low-noise amplifier 53. The filter 44 has a passband including a reception frequency band of the frequency band D. One end of the filter 44 is connected to the inductor 34, and the other end is connected to the input terminal of the low-noise amplifier 54. The filter 45 has a passband including a reception frequency band of the frequency band E. One end of the filter 45 is connected to the inductor 35, and the other end is connected to the input terminal of the low-noise amplifier 55. The configuration of the filters 41 to 45 is not particularly limited, and is, for example, an elastic wave filter including an elastic wave resonator, or an LC filter including an inductor and a capacitor, and the like. Furthermore, the filters 43 to 45 can also not be included in the high-frequency module 1.

[0053] The switch 11 is an example of a first switch, and has a common terminal 11a (first common terminal), a selection terminal 11b (first selection terminal), a selection terminal 11c (second selection terminal), a selection terminal 11d, and a selection terminal 11e (external connection terminal). The switch 11 switches connection and disconnection between the common terminal 11a and the selection terminal 11b, switches connection and disconnection between the common terminal 11a and the selection terminal 11c, switches connection and disconnection between the common terminal 11a and the selection terminal 11d, switches connection and disconnection between the selection terminal 11b and the selection terminal 11e, switches connection and disconnection between the selection terminal 11c and the selection terminal 11e, and switches connection and disconnection between the selection terminal 11d and the selection terminal 11e. The common terminal 11a is connected to the common terminal 12f of the switch 12 via the common path Pc, the selection terminal 11b is connected to the antenna 2a via the antenna connection terminal 101, the selection terminal 11c is connected to the antenna 2b via the antenna connection terminal 102, the selection terminal 11d is connected to the antenna 2c via the antenna connection terminal 103, and the selection terminal 11e is connected to the external circuit (diversity circuit 9) via the external connection terminal 104. Note that the selection terminals 11d and 11e can not be included in the switch 11.

[0054] The switch 12 is an example of a second switch, and has a common terminal 12f (second common terminal), a selection terminal 12a (third selection terminal), a selection terminal 12b (fourth selection terminal), a selection terminal 12c, a selection terminal 12d, and a selection terminal 12e. The switch 12 switches connection and disconnection between the common terminal 12f and the selection terminal 12a, switches connection and disconnection between the common terminal 12f and the selection terminal 12b, switches connection and disconnection between the common terminal 12f and the selection terminal 12c, switches connection and disconnection between the common terminal 12f and the selection terminal 12d, and switches connection and disconnection between the common terminal 12f and the selection terminal 12e. The common terminal 12f is connected to the common terminal 11a via the common path Pc, the selection terminal 12a is connected to the inductor 31, the selection terminal 12b is connected to the inductor 32, the selection terminal 12c is connected to the inductor 33, the selection terminal 12d is connected to the inductor 34, and the selection terminal 12e is connected to the inductor 35. Note that the selection terminals 12c, 12d, and 12e can not be included in the switch 12.

[0055] The inductor 21 is an example of a first inductor, and is connected to the common path Pc that links the common terminal 11a and the common terminal 12f. More specifically, one end of the inductor 21 is connected to the common terminal 11a, and the other end is connected to the common terminal 12f.

[0056] The capacitor 22 is an example of a first capacitor and is connected between the common path Pc and the ground. Further, in the present embodiment, the capacitor 22 is connected to a portion of the common path Pc between the inductor 21 and the common terminal 12f, but can be connected to a portion of the common path Pc between the inductor 21 and the common terminal 11a.

[0057] The inductor 21 and the capacitor 22 constitute a low-pass filter 20. Further, the capacitor 22 can be omitted. In addition, the inductor 21 can be connected between the common path Pc and the ground. In addition, the inductor 21 can function as an impedance matching circuit in the case where the capacitor 22 is not provided.

[0058] The inductor 31 is an example of a second inductor and is connected to a signal path P1 (first path) connecting the selection terminal 12a and the filter 41. More specifically, one end of the inductor 31 is connected to the selection terminal 12a, and the other end is connected to the filter 41. Further, the inductor 31 can be connected between the signal path P1 and the ground.

[0059] The inductor 32 is an example of a third inductor and is connected to a signal path P2 (second path) connecting the selection terminal 12b and the filter 42. More specifically, one end of the inductor 32 is connected to the selection terminal 12b, and the other end is connected to the filter 42. Further, the inductor 32 can be connected between the signal path P2 and the ground.

[0060] The inductor 33 is connected to a signal path connecting the selection terminal 12c and the filter 43. More specifically, one end of the inductor 33 is connected to the selection terminal 12c, and the other end is connected to the filter 43. Further, the inductor 33 can be connected between the above-described signal path and the ground. The inductor 34 is connected to a signal path connecting the selection terminal 12d and the filter 44. More specifically, one end of the inductor 34 is connected to the selection terminal 12d, and the other end is connected to the filter 44. Further, the inductor 34 can be connected between the above-described signal path and the ground. The inductor 35 is connected to a signal path connecting the selection terminal 12e and the filter 45. More specifically, one end of the inductor 35 is connected to the selection terminal 12e, and the other end is connected to the filter 45. Further, the inductor 35 can be connected between the above-described signal path and the ground. Further, the inductors 33 to 35 can be omitted in the high-frequency module 1.

[0061] The inductor 21 and the inductor 31 are configured to be capable of magnetic field coupling. In addition, the inductor 21 and the inductor 32 are configured to be capable of magnetic field coupling.

[0062] The input end of low-noise amplifier 51 is connected to filter 41, and the output end is connected to signal output terminal 110. Low-noise amplifier 51 is capable of amplifying signals in the reception band of frequency band A. The input end of low-noise amplifier 52 is connected to filter 42, and the output end is connected to signal output terminal 120. Low-noise amplifier 52 is capable of amplifying signals in the reception band of frequency band B. The input end of low-noise amplifier 53 is connected to filter 43, and the output end is connected to signal output terminal 130. Low-noise amplifier 53 is capable of amplifying signals in the reception band of frequency band C. Low-noise amplifier 54 is capable of amplifying signals in the reception band of frequency band D. Low-noise amplifier 55 is capable of amplifying signals in the reception band of frequency band E. Furthermore, the low-noise amplifiers 51 to 55 may be a single low-noise amplifier capable of amplifying reception signals in the frequency bands A to E. Furthermore, the high-frequency module 1 may not include the low-noise amplifiers 51 to 55 .

[0063] Coupler 60 is located on common path Pc and is capable of measuring the power of signals transmitted along common path Pc. Coupler 60 includes a main line and a sub-line that are electromagnetically coupled to each other. The main line is located on common path Pc, and one end of the sub-line is terminated, with the other end connected to signal output terminal 105.

[0064] Thus, by arranging only one coupler 60 for measuring signal power on the common path Pc, the power of signals transmitted through multiple signal paths corresponding to frequency bands A to E can be measured, thereby miniaturizing the high-frequency module 1 .

[0065] Next, use Figures 1A-1D The following describes the cases where the high-frequency module 1 (1) receives a signal in frequency band A (frequency band A reception mode), (2) receives a signal in frequency band B (frequency band B reception mode), (3) receives signals in frequency band A and frequency band B simultaneously (frequency band A and B simultaneous reception mode), and (4) receives a signal using an external circuit (external circuit reception mode).

[0066] First, if Figure 1AAs shown, in (1) band A reception mode, common terminal 11a is connected to selection terminal 11b, and common terminal 12f is connected to selection terminal 12a. In this circuit state, the signal of band A passes through antenna 2a, switch 11, low-pass filter 20, switch 12, inductor 31, filter 41, and low-noise amplifier 51, and is output from signal output terminal 110. At this time, the signal flows through inductors 21 and 31, so inductor 21 and inductor 31 are magnetically coupled, generating mutual inductance (+M1) (first mutual inductance). Therefore, the inductance value of low-pass filter 20 (common path Pc) is the value obtained by adding +M1 to the inductance value L21 of inductor 21. In addition, the inductance value of signal path P1 is the value obtained by adding +M1 to the inductance value L31 of inductor 31.

[0067] Furthermore, in (1) Band A reception mode, the signals of Band A are not limited to being received by antenna 2a, and antennas 2b or 2c may also be used to receive the signals of Band A. In this case, the common terminal 11a is connected to the selection terminal 11c, or the common terminal 11a is connected to the selection terminal 11d.

[0068] Then, if Figure 1B As shown, in (2) band B reception mode, common terminal 11a is connected to selection terminal 11b, and common terminal 12f is connected to selection terminal 12b. In this circuit state, the signal of band B passes through antenna 2a, switch 11, low-pass filter 20, switch 12, inductor 32, filter 42, and low-noise amplifier 52 and is output from signal output terminal 120. At this time, the signal flows through inductors 21 and 32, so inductor 21 and inductor 32 are magnetically coupled to generate mutual inductance (+M2) (second mutual inductance). Therefore, the inductance value of low-pass filter 20 (common path Pc) is the value obtained by adding +M2 to the inductance value L21 of inductor 21. In addition, the inductance value of signal path P2 is the value obtained by adding +M2 to the inductance value L32 of inductor 32.

[0069] Furthermore, in (2) Band B reception mode, the signals of Band B are not limited to being received using antenna 2a, and antennas 2b or 2c may also be used to receive the signals of Band B. In this case, the common terminal 11a is connected to the selection terminal 11c, or the common terminal 11a is connected to the selection terminal 11d.

[0070] In the existing high-frequency module, in order to configure a low-pass filter optimized for each of the multiple signal paths that transmit signals in multiple frequency bands, a low-pass filter is configured in each of the paths connecting antenna 2a and switch 11, the path connecting antenna 2b and switch 11, and the path connecting antenna 2c and switch 11.

[0071] On the other hand, in the high-frequency module 1 according to the present embodiment, in the frequency band A reception mode and the frequency band B reception mode, the plurality of signal paths in which the antennas 2a to 2c are connected to any one of the filters 41 to 45 share a common path Pc, and a low-pass filter 20 is provided in the common path Pc. Thus, the chip inductor is not connected in the path in which the antenna connection terminal 101 is connected to the switch 11, the path in which the antenna connection terminal 102 is connected to the switch 11, and the path in which the antenna connection terminal 103 is connected to the switch 11.

[0072] Thus, the inductor 21 provided in the common path Pc can be used as a matching element for obtaining impedance matching between the antennas 2a to 2c and the high-frequency module 1, and thus the high-frequency module 1 can be downsized.

[0073] Further, by individually performing magnetic field coupling of the inductor 21 of the low-pass filter 20 and each of the inductors 31 to 35 provided in the respective signal paths, it is possible to optimize the passband width, the frequency of the attenuation pole, and the like of the low-pass filter 20 for each of the signal paths for the frequency bands A to E. For example, in the frequency band A reception mode, the inductor 21 and the inductor 31 perform magnetic field coupling to generate mutual inductance (+M1), and in the frequency band B reception mode, the inductor 21 and the inductor 32 perform magnetic field coupling to generate mutual inductance (+M2) different from the mutual inductance (+M1). By generating mutual inductance as described above, it is possible to make the effective inductance value of the common path Pc larger than the inductance value of the inductor 21, and it is possible to make the effective inductance value of the signal path P1 larger than the inductance value of the inductor 31, and it is possible to make the effective inductance value of the signal path P2 larger than the inductance value of the inductor 32. Thus, it is possible to reduce the inductance values of the inductors 21 and 31 by the amount of the mutual inductance (+M1), and it is possible to reduce the inductance values of the inductors 21 and 32 by the amount of the mutual inductance (+M2), and thus it is possible to reduce the resistance loss of the inductors 21, 31, and 32, and it is possible to reduce the transmission loss of the signal path for the frequency band A and the signal path for the frequency band B.

[0074] Next, as Figure 1CAs shown, in (3) the simultaneous reception mode of frequency bands A and B, the common terminal 11a is connected to the selection terminal 11b, the common terminal 12f is connected to the selection terminal 12a, and the common terminal 12f is connected to the selection terminal 12b. In this circuit state, the signal of frequency band A passes through the antenna 2a, switch 11, low-pass filter 20, switch 12, inductor 31, filter 41, and low-noise amplifier 51 and is output from the signal output terminal 110. At the same time, the signal of frequency band B passes through the antenna 2a, switch 11, low-pass filter 20, switch 12, inductor 32, filter 42, and low-noise amplifier 52 and is output from the signal output terminal 120. At this time, the signal flows through inductors 21, 31, and 32, so that inductor 21 is magnetically coupled with inductor 31 and inductor 32, generating mutual inductance (+M3). Therefore, the inductance value of the low-pass filter 20 (common path Pc) is the value obtained by adding +M3 to the inductance value L21 of inductor 21. The inductance value of the signal path P1 is a value obtained by adding +M1 to the inductance value L31 of the inductor 31 , and the inductance value of the signal path P2 is a value obtained by adding +M2 to the inductance value L32 of the inductor 32 .

[0075] Furthermore, in (3) the band A and band B reception mode, the antenna 2a is not limited to receiving the signals of the bands A and B, and the antenna 2b or 2c may be used to receive at least one signal of the bands A and B. In this case, the common terminal 11a is connected to the selection terminal 11c, and / or the common terminal 11a is connected to the selection terminal 11d.

[0076] Then, if Figure 1D As shown, in (4) external circuit reception mode, selection terminal 11b is connected to selection terminal 11e. In this circuit state, the signal of frequency band A passes through antenna 2a, switch 11, and external connection terminal 104 and is output to the external circuit of high-frequency module 1, namely, diversity circuit 9. Diversity circuit 9 includes, for example, switch 19, inductor 39, filter 49, and low-noise amplifier 59. The signal of frequency band A that has passed through switch 11 of high-frequency module 1 passes through switch 19, inductor 39, filter 49, and low-noise amplifier 59 and is output to, for example, RFIC 3. Since switch 11 has selection terminal 11e, the signal of frequency band A transmitted in diversity circuit 9 does not pass through low-pass filter 20, thereby reducing the transmission loss of the signal path connecting from antennas 2a to 2c to diversity circuit 9.

[0077] Furthermore, in (4) external circuit reception mode, antenna 2a is not limited to receiving signals in frequency band A. Antennas 2b or 2c may also be used to receive signals in frequency band A. In this case, common terminal 11a is connected to selection terminal 11c, or common terminal 11a is connected to selection terminal 11d.

[0078] [2 Component Arrangement Structure of High-Frequency Module 1]

[0079] Next, the component arrangement structure of the high-frequency module 1 according to this embodiment will be described. Figure 2 1 are a plan view and a cross-sectional view of the high-frequency module 1 according to the embodiment. Figure 2 (a) shows the arrangement of the circuit components when the main surface 70a of the module substrate 70 is viewed from the positive z-axis direction side. Figure 2 In (a), the circuit components arranged on the main surface 70b of the module substrate 70 are indicated by dotted lines. Figure 2 (b) shows Figure 2 (a) is a cross-sectional view at line IIB-IIB. Figure 2 In FIG, the wiring connecting the module substrate 70 and each circuit component is partially omitted. Figure 2 In the figure, in order to facilitate understanding of the configuration relationship of the filters, symbols indicating their functions are marked, but these symbols are not marked on the actual filters.

[0080] Figure 2 The high frequency module 1 shown in FIG. Figures 1A-1D The high-frequency module 1 shown in FIG further includes a module substrate 70 , resin members 85 and 86 , and a shield electrode layer 95 .

[0081] The module substrate 70 has opposing principal surfaces 70a (first principal surface) and 70b (second principal surface), and is used to mount the circuit components that constitute the high-frequency module 1. Examples of the module substrate 70 include a low-temperature co-fired ceramic (LTCC) substrate or a high-temperature co-fired ceramic (HTCC) substrate having a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board.

[0082] like Figure 2 As shown in FIG. 1 , filters 41 to 45 and inductors 21 and 31 to 35 are arranged on the main surface 70a. In addition, semiconductor IC (Integrated Circuit) 81 and external connection terminals 91 and 92 are arranged on the main surface 70b. In addition, low noise amplifiers 51 to 55, coupler 60 and capacitor 22 are arranged on the main surface 70b. Figure 2 Although not shown in the figure, it can also be arranged on the module substrate 70.

[0083] Semiconductor IC 81 is an example of a first semiconductor IC and includes switches 11 and 12. Semiconductor IC 81 can be constructed using, for example, a CMOS (Complementary Metal Oxide Semiconductor) process, specifically, a silicon-on-insulator (SOI) process. Alternatively, semiconductor IC 81 can be constructed from at least one of GaAs, SiGe, and GaN. The semiconductor materials used for semiconductor IC 81 are not limited to those listed above.

[0084] Thus, the circuit components constituting the high-frequency module 1 are separately arranged on both surfaces of the module substrate 70 , and thus the high-frequency module 1 can be miniaturized.

[0085] The inductors 21 and 31 to 35 are, for example, surface-mount chip inductors. Alternatively, the inductors 21 and 31 to 35 may be formed of a planar coil conductor formed on the module substrate 70 .

[0086] like Figure 2 As shown in (a), the distance D between the inductor 21 and the inductor 31 is 31 The distance D between the inductor 21 and the inductor 32 is 32 Small.

[0087] This allows the mutual inductance (+M1) generated by magnetic field coupling between inductor 21 and inductor 31 to be different from the mutual inductance (+M2) generated by magnetic field coupling between inductor 21 and inductor 32. Furthermore, when the inductance values ​​of inductor 31 and inductor 32 are substantially equal, the mutual inductance (+M1) can be made larger than the mutual inductance (+M2).

[0088] This allows the inductance of common path Pc to be greater than that of inductor 21, the inductance of signal path P1 to be greater than that of inductor 31, and the inductance of signal path P2 to be greater than that of inductor 32. Consequently, the inductance of inductors 21 and 31 can be reduced by the mutual inductance (+M1), and the inductance of inductors 21 and 32 can be reduced by the mutual inductance (+M2). This reduces the resistance loss of inductors 21, 31, and 32, and the transmission loss of the signal paths in band A and band B. Furthermore, since the mutual inductance (+M1) and the mutual inductance (+M2) can be made different, the inductance of common path Pc can be set separately for transmitting signals in band A and band B.

[0089] In addition, you can also Figure 2The winding axis positive direction of the inductor 21, the winding axis positive direction of the inductor 31, and the winding axis positive direction of the inductor 32 are identical.

[0090] Thereby, the mutual inductance (+M1) and the mutual inductance (+M2) can be set to positive values. Further, the mutual inductance (+M1) and the mutual inductance (+M2) can be regulated by adjusting the distance D 31 and the distance D 32 . In the present embodiment, the distance D 31 is smaller than the distance D 32 , and thus the mutual inductance (+M1) can be made larger than the mutual inductance (+M2).

[0091] Further, in the case where the inductor is a surface-mount type chip component, the winding axis thereof is the winding axis of the coil formed inside the component. Further, in the case where the inductor is constituted by a planar coil formed on the module substrate 70, the winding axis thereof is an axis perpendicular to the plane including the planar coil and intersecting the region surrounded by the planar coil.

[0092] Further, the direction of the winding axis of the inductor is defined as follows. In the case where, when viewing the coil constituting the inductor from the direction from one side of the winding axis toward the other side, the current flows clockwise (right turn) in the coil, the winding axis positive direction is defined as the direction from the above-mentioned one side of the winding axis toward the above-mentioned other side, and the winding axis negative direction is defined as the direction from the above-mentioned other side of the winding axis toward the above-mentioned one side.

[0093] The resin member 85 is arranged so as to cover the main surface 70a, the filters 41 to 45, and the inductors 21 and 31 to 35. The resin member 86 is arranged so as to cover the main surface 70b and the semiconductor IC 81.

[0094] The shield electrode layer 95 is formed so as to cover the surface of the resin member 85, the side surface of the resin member 86, and the side surface of the module substrate 70, and is set to ground potential.

[0095] Further, at least one of the resin members 85 and 86 and the shield electrode layer 95 can not be present.

[0096] As shown in (a) of FIG. 8, in the case where the module substrate 70 is viewed from above, the inductors 31 and 32 overlap the semiconductor IC 81. Thereby, the wiring connected to the selection terminals 12a and 12b of the switch 12 can be shortened, and thus the transmission loss of the high-frequency module 1 can be reduced. Further, at least one of the inductors 31 and 32 can overlap the semiconductor IC 81. Figure 2

[0097] ​In addition, although not shown, the inductor 21 can overlap the semiconductor IC 81 when the module substrate 70 is viewed from above. By this, the wiring connected to the common terminal 12f side of the switch 12 can be shortened, and thus the transmission loss of the high-frequency module 1 can be reduced.

[0098] [3 Configuration of Components of High-Frequency Module 1A According to Modified Example 1]

[0099] Next, the configuration of components of the high-frequency module 1A according to modified example 1 will be described. The high-frequency module 1A according to this modified example is provided with the switches 11 and 12, the filters 41 to 45, the inductors 21, 31, 32A, 33, 34, and 35, the capacitor 22, the low-noise amplifiers 51 to 55, the coupler 60, the antenna connection terminals 101 to 103, the external connection terminal 104, the signal output terminals 105 and 110 to 150, the module substrate 70, the resin members 85 and 86, and the shield electrode layer 95. The high-frequency module 1A according to this modified example differs from the high-frequency module 1 according to the embodiment only in the configuration of the inductor 32. Therefore, hereinafter, regarding the high-frequency module 1A according to this modified example, the description of the same structure as that of the high-frequency module 1 according to the embodiment will be omitted, and the different structure will be described.

[0100] The inductor 32A is an example of the third inductor, and is connected to the signal path P2 connecting the selection terminal 12b and the filter 42. More specifically, one end of the inductor 32A is connected to the selection terminal 12b, and the other end is connected to the filter 42.

[0101] Figure 3 is a plan view of the high-frequency module 1A according to modified example 1 of the embodiment. As shown in this figure, the filters 41 to 45, and the inductors 21, 31, 32A, 33, 34, and 35 are arranged on the main surface 70a. In addition, the semiconductor IC 81, the external connection terminals 91 and 92 are arranged on the main surface 70b. Further, the low-noise amplifiers 51 to 55, the coupler 60, and the capacitor 22 are not shown in the figure, but can be arranged on the module substrate 70. Figure 3

[0102] By this, the circuit components constituting the high-frequency module 1A are arranged separately on both surfaces of the module substrate 70, and thus the high-frequency module 1A can be downsized.

[0103] Each of the inductors 21, 31, 32A, 33, 34, and 35 is, for example, a surface-mounted chip inductor. Further, each of the inductors 21, 31, 32A, 33, 34, and 35 can be constituted by a planar coil conductor formed on the module substrate 70.

[0104] As shown in the figure, the inductor 32A is arranged on the main surface 70a of the module substrate 70. Figure 3 ​As shown, the winding axis positive direction (x axis negative direction) of the inductor 21 coincides with the winding axis positive direction (x axis negative direction) of the inductor 31, and the winding axis positive direction (x axis negative direction) of the inductor 21 coincides with the winding axis negative direction (x axis negative direction) of the inductor 32A.

[0105] Thus, the mutual inductance (+M1) generated by the magnetic field coupling of the inductor 21 and the inductor 31 can be made different from the mutual inductance (-M2) generated by the magnetic field coupling of the inductor 21 and the inductor 32A. Also, in the case where the inductance value of the inductor 31 and the inductance value of the inductor 32A are approximately equal, the mutual inductance (+M1) can be made larger than the mutual inductance (-M2).

[0106] Thus, the inductance value of the common path Pc can be made larger than the inductance value of the inductor 21, and the inductance value of the signal path P1 can be made larger than the inductance value of the inductor 31. Therefore, the inductance values of the inductors 21 and 31 can be reduced by the amount of the mutual inductance (+M1), so the resistance loss of the inductors 21 and 31 can be reduced, and the transmission loss of the signal path in the frequency band A can be reduced. Also, the mutual inductance (+M1) and the mutual inductance (-M2) can be made different, so the inductance value of the common path Pc can be set individually in the case of transmitting the signal of the frequency band A and in the case of transmitting the signal of the frequency band B.

[0107] Further, in the present modification, the winding axis positive direction of the inductor 31 is set to the same direction as the winding axis positive direction of the inductor 21, and the winding axis positive direction of the inductor 32A is set to the opposite direction to the winding axis positive direction of the inductor 21, but instead of this configuration, the angle formed by the winding axis positive direction of the inductor 21 and the winding axis positive direction of the inductor 31 can be made smaller than the angle formed by the winding axis positive direction of the inductor 21 and the winding axis positive direction of the inductor 32A.

[0108] Thus, the inductance value of the common path Pc can be made larger than the inductance value of the inductor 21, and the inductance value of the signal path P1 can be made larger than the inductance value of the inductor 31. Therefore, the inductance values of the inductors 21 and 31 can be reduced by the amount of the mutual inductance (+M1) generated by the magnetic field coupling of the inductor 21 and the inductor 31, so the resistance loss of the inductors 21 and 31 can be reduced, and the transmission loss of the signal path in the frequency band A can be reduced. Also, the mutual inductance (+M1) generated by the magnetic field coupling of the inductor 21 and the inductor 31 can be made larger than the mutual inductance (+M2) generated by the magnetic field coupling of the inductor 21 and the inductor 32A, so the inductance value of the common path Pc can be set individually in the case of transmitting the signal of the frequency band A and in the case of transmitting the signal of the frequency band B.

[0109] Also, as shown in FIG. 17, the distance D between the inductor 21 and the inductor 32 can be made larger than the distance D between the inductor 21 and the inductor 32A. Figure 3 As shown, the distance D between the inductor 21 and the inductor 32 31Distance D of the mutual inductor 21 from the inductor 32A 32 Small.

[0110] Thus, the mutual inductance (+M1) and the mutual inductance (+M2) can be made more different. Also, in a case where the inductance value of the inductor 21 and the inductance value of the inductor 31 are substantially equal, the mutual inductance (+M1) can be made larger than the mutual inductance (+M2).

[0111] Also, as shown in FIG. 10, in a case of viewing the module substrate 70 from above, the inductors 31 and 32A overlap the semiconductor IC 81. Thus, the wiring connected to the selection terminals 12a and 12b of the switch 12 can be shortened, and thus the transmission loss of the high-frequency module 1A can be reduced. At least one of the inductors 31 and 32A can overlap the semiconductor IC 81. Figure 3 Also, although not shown, in a case of viewing the module substrate 70 from above, the inductor 21 can also overlap the semiconductor IC 81. Thus, the wiring connected to the common terminal 12f of the switch 12 can be shortened, and thus the transmission loss of the high-frequency module 1A can be reduced.

[0112] [4 Configuration structure of components of high-frequency module 1B according to modification 2]

[0113] Next, the configuration structure of components of the high-frequency module 1B according to modification 2 will be described. The high-frequency module 1B according to this modification is provided with the switches 11 and 12, the filters 41 to 45, the inductors 21 and 31 to 35, the capacitor 22, the low-noise amplifiers 51 to 55, the coupler 60, the antenna connection terminals 101 to 103, the external connection terminals 104, the signal output terminals 105 and 110 to 150, the module substrate 70, the resin members 85 and 86, the shield electrode layer 95, and the ground metal plate 93. The high-frequency module 1B according to this modification is different from the high-frequency module 1 according to the embodiment only in that the ground metal plate 93 is provided. Therefore, hereinafter, regarding the high-frequency module 1B according to this modification, the description of the same structure as that of the high-frequency module 1 according to the embodiment will be omitted, and the different structure will be described.

[0114]

[0115] is a plan view and a cross-sectional view of the high-frequency module 1B according to modification 2 of the embodiment. As shown in this figure, the filters 41 to 45, the inductors 21 and 31 to 35, and the ground metal plate 93 are provided on the main surface 70a. Also, the semiconductor IC 81, the external connection terminals 91 and 92 are provided on the main surface 70b. Furthermore, the low-noise amplifiers 51 to 55, the coupler 60, and the capacitor 22, although not shown in FIG. 10, can be provided on the module substrate 70. Figure 4 Figure 4 ​​

[0116] Thus, the circuit components constituting the high-frequency module 1B are arranged separately on both surfaces of the module substrate 70, so that the high-frequency module 1B can be miniaturized.

[0117] The ground metal plate 93 is an example of a metal member that is erected on the main surface 70a between the inductors 21 and 31 and the inductor 32. More specifically, the ground metal plate 93 is erected on the main surface 70a in a manner of surrounding the inductors 21 and 31. Further, the ground metal plate 93 can be joined to the shield electrode layer 95 as shown in (b) of FIG. 9, or can be connected to a ground layer formed in the module substrate 70. Figure 4

[0118] Thus, the ground metal plate 93 is arranged between the inductors 21 and 32, so that the mutual inductance (+M2) generated by the magnetic field coupling between the inductors 21 and 32 can be made smaller than the mutual inductance (+Ml) generated by the magnetic field coupling between the inductors 21 and 31.

[0119] Further, the mutual inductance (+Ml) and the mutual inductance (+M2) can be adjusted in accordance with the distance D 31 between the inductors 21 and 31, the distance D 32 between the inductors 21 and 32, and the winding axis directions of the inductors 31 and 32.

[0120] Thus, the inductance value of the common path Pc can be made larger than the inductance value of the inductor 21, and the inductance value of the signal path Pl can be made larger than the inductance value of the inductor 31. Therefore, the inductance values of the inductors 21 and 31 can be reduced by the amount of the mutual inductance (+Ml), so that the resistance loss of the inductors 21 and 31 can be reduced, and the transmission loss of the signal paths in the frequency band A can be reduced. Further, the mutual inductance (+Ml) and the mutual inductance (+M2) can be made different, so that the inductance value of the common path Pc can be set individually in the case of transmitting the signal of the frequency band A and in the case of transmitting the signal of the frequency band B.

[0121] Further, in the present modification example, the ground metal plate 93 is erected on the main surface 70a in a manner of surrounding the inductors 21 and 31, but can be erected in a manner of surrounding the inductor 32 without surrounding the inductors 21 and 31. Further, the metal member that separates the inductors 21 and 31 from the inductor 32 can not be the ground metal plate 93, but can be a circuit element including a conductive member such as an electrode.

[0122] Further, a ground metal plate that separates the filters 41 to 45 from the inductors 21 and 31 to 35 can be arranged on the main surface 70a. Thus, the electromagnetic field coupling between the inductors 21 and 31 to 35 and the filters 41 to 45 can be suppressed while the magnetic field coupling between the inductors 21 and 31 to 35 is ensured.​

[0123] [5Structure of high-frequency module 1C according to modification 3]

[0124] Next, the circuit structure and band-pass characteristics of the high-frequency module 1C according to modification 3 of the embodiment will be described. Figure 5A is a circuit structure diagram of the high-frequency module 1C according to modification 3 of the embodiment at the reception frequency band A. Figure 5B is a circuit structure diagram of the high-frequency module 1C according to modification 3 of the embodiment at the reception frequency band B. Figure 5C is a circuit structure diagram of the high-frequency module 1C according to modification 3 of the embodiment at the reception frequency band C. As shown in Figures 5A-5C the high-frequency module 1C has switches 11 and 12, filters 41 to 45, inductors 21, 31 to 35, capacitors 22 and 23, low-noise amplifiers 51 to 55, antenna connection terminals 101 to 103, and signal output terminals 110 to 150. The high-frequency module 1C can also have a coupler 60 disposed in the common path Pc. The high-frequency module 1C according to the present modification differs from the high-frequency module 1 according to the embodiment in the circuit structure of the low-pass filter 20C. Therefore, hereinafter, regarding the high-frequency module 1C according to the present modification, the description of the same structure as that of the high-frequency module 1 according to the embodiment will be omitted, and the different structure will be described.

[0125] The inductor 21 is an example of the first inductor, and is connected to the common path Pc that links the common terminal 11a and the common terminal 12f. More specifically, one end of the inductor 21 is connected to the common terminal 11a, and the other end is connected to the common terminal 12f.

[0126] The capacitor 22 is an example of the first capacitor, and is connected between the common path Pc and the ground. In the present embodiment, the capacitor 22 is connected to the portion of the common path Pc between the inductor 21 and the common terminal 12f, but can be connected to the portion of the common path Pc between the inductor 21 and the common terminal 11a.

[0127] The capacitor 23 is an example of the second capacitor, and is connected in parallel to the inductor 21.

[0128] The inductor 21, the capacitor 22, and the capacitor 23 constitute the low-pass filter 20C. In addition, the capacitor 22 can be omitted.

[0129] The inductor 21 and the inductor 31 are configured to be capable of magnetic field coupling. In addition, the inductor 21 and the inductor 33 are configured to be capable of magnetic field coupling. In addition, the inductor 21 and the inductor 32 are configured not to perform magnetic field coupling.

[0130] Examples of the structure of the high-frequency module 1C that achieves the presence or absence of magnetic field coupling between the inductor 21 and the inductors 31 to 33 described above include the following arrangement structures A to C. The high-frequency module 1C further includes a module substrate 70 having main surfaces 70a and 70b facing each other.

[0131] (Configuration Structure A)

[0132] Inductors 21 and 31 to 33 are arranged on the main surface 70a, with the positive winding axis direction of inductor 21 aligned with the positive winding axis direction of inductor 31, and the positive winding axis direction of inductor 21 aligned with the negative winding axis direction of inductor 33. The distance D between inductor 21 and inductor 31 is 31 The distance D between the inductor 21 and the inductor 32 is 32 Small.

[0133] (Configuration Structure B)

[0134] Inductors 21 and 31 to 33 are arranged on the main surface 70a, the positive direction of the winding axis of inductor 21 is consistent with the positive direction of the winding axis of inductor 31, the positive direction of the winding axis of inductor 21 is consistent with the negative direction of the winding axis of inductor 33, and the angle formed by the positive direction of the winding axis of inductor 21 and the positive direction of the winding axis of inductor 32 is 90°.

[0135] (Configuration Structure C)

[0136] Inductors 21 and 31-33 are arranged on main surface 70a, with the positive winding axis direction of inductor 21 aligned with the positive winding axis direction of inductor 31, and the positive winding axis direction of inductor 21 aligned with the negative winding axis direction of inductor 33. Furthermore, a ground metal plate is erected on main surface 70a so as to surround inductors 21, 31, and 33, excluding inductor 32.

[0137] Next, use Figures 5A-5C The following describes the cases where the high-frequency module 1C (1) receives a signal in frequency band A (frequency band A reception mode), (2) receives a signal in frequency band B (frequency band B reception mode), and (3) simultaneously receives a signal in frequency band C (frequency band C reception mode).

[0138] First, if Figure 5AAs shown, in (1) band A reception mode, common terminal 11a is connected to selection terminal 11b, and common terminal 12f is connected to selection terminal 12a. In this circuit state, the band A signal passes through antenna 2a, switch 11, low-pass filter 20C, switch 12, inductor 31, filter 41, and low-noise amplifier 51, and is output from signal output terminal 110. At this time, the signal flows through inductors 21 and 31, so inductor 21 and inductor 31 are magnetically coupled, generating mutual inductance (+M1). As a result, in low-pass filter 20C, an inductance of +M1 is equivalently added in series to common path Pc, an inductance of -M1 is equivalently added in series to the shunt path connecting common path Pc and capacitor 22, and an inductance of +M1 is equivalently added in series to signal path P1.

[0139] Furthermore, in (1) Band A reception mode, antenna 2a is not limited to receiving signals in Band A. Antennas 2b or 2c may also be used to receive signals in Band A. In this case, common terminal 11a is connected to selection terminal 11c, or common terminal 11a is connected to selection terminal 11d.

[0140] Then, if Figure 5B As shown, in (2) Band B reception mode, common terminal 11a is connected to selection terminal 11b, and common terminal 12f is connected to selection terminal 12b. In this circuit state, the signal of Band B passes through antenna 2a, switch 11, low-pass filter 20C, switch 12, inductor 32, filter 42, and low-noise amplifier 52, and is output from signal output terminal 120. At this time, although the signal flows through inductors 21 and 32, since inductor 21 and inductor 32 are configured so as not to couple with a magnetic field, no mutual inductance is generated between inductor 21 and inductor 32.

[0141] Furthermore, in (2) Band B reception mode, antenna 2a is not limited to receiving signals in Band B. Antennas 2b or 2c may also be used to receive signals in Band B. In this case, common terminal 11a is connected to selection terminal 11c, or common terminal 11a is connected to selection terminal 11d.

[0142] Then, if Figure 5CIn the (3) frequency band C reception mode, the common terminal 11a is connected to the selection terminal 11b, and the common terminal 12f is connected to the selection terminal 12c. In this circuit state, the signal of the frequency band C is outputted from the signal output terminal 130 through the antenna 2a, the switch 11, the low pass filter 20C, the switch 12, the inductor 33, the filter 43, and the low noise amplifier 53. At this time, the signal flows through the inductors 21 and 33, and thus the inductor 21 and the inductor 33 are magnetically coupled to each other to generate mutual inductance (-M3). Thus, in the low pass filter 20C, an inductance of -M3 is added in series to the common path Pc equivalently, an inductance of +M3 is added in series to the shunt path connecting the common path Pc and the capacitor 22 equivalently, and an inductance of -M3 is added in series to the signal path P3 connecting the selection terminal 12c and the filter 43 equivalently.

[0143] Further, in the (3) frequency band C reception mode, the signal of the frequency band C can be received by the antenna 2b or 2c, not by the antenna 2a. In this case, the common terminal 11a is connected to the selection terminal 11c, or the common terminal 11a is connected to the selection terminal 11d.

[0144] Figure 6 Fig. 9 is a graph showing the band pass characteristic of the low pass filter 20C of the high frequency module 1C according to Modification 3. In this graph, the band pass characteristic of the low pass filter 20C in the (1) frequency band A reception mode, the (2) frequency band B reception mode, and the (3) frequency band C reception mode are shown.

[0145] In the frequency band A reception mode, an equivalent inductor having an inductance of -Ml is added between the common path Pc and the ground, and a first attenuation pole at a frequency f A is formed in the band pass characteristic by a resonance circuit including the equivalent inductor.

[0146] In the frequency band B reception mode, an equivalent inductor generated by magnetic coupling is not added between the common path Pc and the ground, and a second attenuation pole at a frequency f B which is on the low frequency side compared to the first attenuation pole is formed in the band pass characteristic by a resonance circuit not including the equivalent inductor.

[0147] In the frequency band C reception mode, an equivalent inductor having an inductance of +M3 is added between the common path Pc and the ground, and a third attenuation pole at a frequency f C which is on the low frequency side compared to the second attenuation pole is formed in the band pass characteristic by a resonance circuit including the equivalent inductor.

[0148] Thus, by the magnetic field coupling of the inductor 21 and the inductor 31, an equivalent inductor having a negative inductance (-M1) and no resistance component is added between the common path Pc and the capacitor 22, and a sharp first attenuation pole can be generated. Also, by the magnetic field coupling of the inductor 21 and the inductor 33, an equivalent inductor having a positive inductance (+M3) and no resistance component is added between the common path Pc and the capacitor 22, and a sharp third attenuation pole can be generated. Thus, by the magnetic field coupling of the inductor 21 and the inductor 31 and the magnetic field coupling of the inductor 21 and the inductor 33, the generation frequencies of the attenuation poles can be made different.

[0149] For example, in a case where the frequency bands have a frequency band relationship in which the frequency band A is located at a higher frequency side than the frequency band B, and the frequency band B is located at a higher frequency side than the frequency band C, by making f A B C Thus, the high frequency end of the passband of the low pass filter 20C is shifted in matching with the frequency band frequencies, and thus the signals of the respective frequency bands can be low-lossed. That is, by making the inductor 21 of the low pass filter 20C perform magnetic field coupling with the inductors 31 to 35 provided to the respective signal paths, the passband width, the frequencies of the attenuation poles, and the like of the low pass filter 20C can be optimized for each of the signal paths for the frequency bands A to E.

[0150] Also, in the high frequency module 1C according to the present modified example, the plurality of signal paths linking the antennas 2a to 2c and any one of the filters 41 to 45 share the common path Pc, and one low pass filter 20C is provided to the common path Pc. Thus, the chip inductors are not connected in the path linking the antenna connection terminal 101 and the switch 11, the path linking the antenna connection terminal 102 and the switch 11, and the path linking the antenna connection terminal 103 and the switch 11.

[0151] Thus, the low pass filter 20C can be used as a matching circuit for impedance matching between the antennas 2a to 2c and the high frequency module 1C, and thus the high frequency module 1C can be downsized.

[0152] [Structure of high frequency module 1D according to modified example 4]

[0153] Next, the circuit structure and the band pass characteristics of the high frequency module 1D according to the modified example 4 of the embodiment will be described. Figure 7A is a circuit structure diagram of the high frequency module 1D according to the modified example 4 of the embodiment at the time of transmission of the frequency band A. Figure 7B is a circuit structure diagram of the high frequency module 1D according to the modified example 4 of the embodiment at the time of reception of the frequency band A. As Figure 7A and Figure 7B ​​As shown, the high-frequency module 1D is provided with the switches 11 and 12, the filters 41 and 43 to 46, the inductors 21, 31, and 33 to 36, the capacitors 22 and 24, the low-noise amplifiers 51 and 53 to 55, the power amplifier 56, the antenna connection terminals 101 to 103, the signal output terminals 120 to 150, and the signal input terminal 160. Further, the high-frequency module 1D can also be provided with the coupler 60 disposed in the common path Pc. The high-frequency module 1D according to the present modified example differs from the high-frequency module 1 according to the embodiment in the structure of the low-pass filter 20D and in that the transmission circuit of the frequency band A is disposed instead of the reception circuit of the frequency band B. Therefore, hereinafter, for the high-frequency module 1D according to the present modified example, the description of the same structure as the high-frequency module 1 according to the embodiment will be omitted, and the different structure will be described.

[0154] The signal input terminal 160 is connected to the input terminal of the power amplifier 56. The signal output terminal 120 is connected to the output terminal of the low-noise amplifier 51.

[0155] The filter 46 is an example of the first filter, and has a passband including the transmission frequency band of the frequency band A. One end of the filter 46 is connected to the inductor 36, and the other end is connected to the output terminal of the power amplifier 56.

[0156] The filter 41 is an example of the second filter, and has a passband including the reception frequency band of the frequency band A. One end of the filter 41 is connected to the inductor 31, and the other end is connected to the input terminal of the low-noise amplifier 51.

[0157] The switch 12 has a common terminal 12f, selection terminals 12a, 12b, 12c, 12d, and 12e. The common terminal 12f is connected to the common terminal 11a via the common path Pc, the selection terminal 12a is connected to the inductor 36, the selection terminal 12b is connected to the inductor 31, the selection terminal 12c is connected to the inductor 33, the selection terminal 12d is connected to the inductor 34, and the selection terminal 12e is connected to the inductor 35.

[0158] The capacitor 24 is connected between the common path Pc and the ground.

[0159] The inductor 21 is an example of the first inductor, and is connected to the common path Pc that links the common terminal 11a and the common terminal 12f. More specifically, one end of the inductor 21 is connected to the common terminal 11a, and the other end is connected to the common terminal 12f.

[0160] The inductor 36 is an example of a first inductor, and is connected to a signal path P1 (first path) that links the selection terminal 12a and the filter 46. More specifically, one end of the inductor 36 is connected to the selection terminal 12a, and the other end is connected to the filter 46. In addition, the inductor 36 can also be connected between the signal path P1 and the ground.

[0161] The inductor 31 is an example of a second inductor, and is connected to a signal path P2 (second path) that links the selection terminal 12a and the filter 41. More specifically, one end of the inductor 31 is connected to the selection terminal 12a, and the other end is connected to the filter 41. In addition, the inductor 31 can also be connected between the signal path P2 and the ground.

[0162] The inductor 21, the capacitors 22 and 24 constitute the low-pass filter 20D. In addition, the capacitors 22 and 24 can also be omitted. In addition, the inductor 21 can also be connected between the common path Pc and the ground. In addition, in the case where the capacitors 22 and 24 are not provided, the inductor 21 can also function as an impedance matching circuit.

[0163] The inductor 21 and the inductor 36 are configured to be capable of magnetic field coupling. In addition, the inductor 21 and the inductor 31 are configured not to perform magnetic field coupling.

[0164] The inductor 36 is connected to the signal path P1 that links the selection terminal 12a and the filter 46. More specifically, one end of the inductor 36 is connected to the selection terminal 12a, and the other end is connected to the filter 46. In addition, the inductor 36 can also be connected between the signal path P1 and the ground.

[0165] The inductor 31 is connected to the signal path P2 that links the selection terminal 12b and the filter 41. More specifically, one end of the inductor 31 is connected to the selection terminal 12b, and the other end is connected to the filter 41. In addition, the inductor 31 can also be connected between the signal path P2 and the ground.

[0166] The output terminal of the power amplifier 56 is connected to the filter 46, and the input terminal is connected to the signal input terminal 160. The input terminal of the low-noise amplifier 51 is connected to the filter 41, and the output terminal is connected to the signal output terminal 120.

[0167] As a configuration of the high-frequency module 1D that realizes the presence or absence of the magnetic field coupling of the inductor 21 and the inductors 31 and 36 as described above, for example, the following configuration structures D to F are cited. In addition, the high-frequency module 1D further has a module substrate 70 that has main surfaces 70a and 70b facing each other.

[0168] (Configuration structure D)

[0169] The inductors 21, 31, and 36 are arranged on the main surface 70a, and the positive direction of the winding axis of the inductor 21 is aligned with the negative direction of the winding axis of the inductor 36. The distance D between the inductor 21 and the inductor 31 is 31 The distance D between the inductor 21 and the inductor 36 is 36 big.

[0170] (Configuration Structure E)

[0171] Inductors 21 , 31 , and 36 are arranged on main surface 70 a , with the positive winding axis of inductor 21 coinciding with the negative winding axis of inductor 36 , and the angle between the positive winding axes of inductor 21 and 31 is 90°.

[0172] (Configuration Structure F)

[0173] Inductors 21, 31, and 36 are arranged on main surface 70a, with the positive winding axis of inductor 21 aligning with the negative winding axis of inductor 36. A ground metal plate is erected on main surface 70a to surround inductors 21 and 36, excluding inductor 31.

[0174] Next, use Figure 7A and Figure 7B The following describes the case where the high-frequency module 1D (1) transmits a signal in the frequency band A (frequency band A transmission mode) and (2) receives a signal in the frequency band A (frequency band A reception mode).

[0175] First, if Figure 7A As shown, in (1) Band A transmission mode, common terminal 11a is connected to selection terminal 11b, and common terminal 12f is connected to selection terminal 12a. In this circuit state, the signal in Band A passes through signal input terminal 160, power amplifier 56, filter 46, inductor 36, switch 12, low-pass filter 20D, and switch 11, and is output from antenna 2a. At this time, the signal flows through inductors 21 and 36, so inductor 21 and inductor 36 are magnetically coupled to generate mutual inductance (-M1). As a result, in low-pass filter 20D, an inductance of -M1 is equivalently added in series with common path Pc, an inductance of +M1 is equivalently added in series with the shunt path connecting common path Pc and capacitor 22, and an inductance of -M1 is equivalently added in series with signal path P1.

[0176] Furthermore, in (1) Band A transmission mode, antenna 2a is not limited to transmitting signals in Band A, and antennas 2b or 2c may also transmit signals in Band B. In this case, common terminal 11a is connected to selection terminal 11c, or common terminal 11a is connected to selection terminal 11d.

[0177] Then, if Figure 7BAs shown, in the (2) frequency band A reception mode, the common terminal 11a is connected to the selection terminal 11b, and the common terminal 12f is connected to the selection terminal 12b. In this circuit state, the signal of the frequency band A is outputted from the signal output terminal 120 through the antenna 2a, the switch 11, the low pass filter 20D, the switch 12, the inductor 31, the filter 41, and the low noise amplifier 51. At this time, although the signal flows through the inductors 21 and 31, the inductor 21 and the inductor 31 are configured not to perform magnetic field coupling, and thus no mutual inductance is generated between the inductor 21 and the inductor 31.

[0178] Further, in the (2) frequency band A reception mode, not only the signal of the frequency band A is received by the antenna 2a, but also the signal of the frequency band A can be received by the antenna 2b or 2c. In this case, the common terminal 11a is connected to the selection terminal 11c, or the common terminal 11a is connected to the selection terminal 11d.

[0179] Next, the circuit structure of the high frequency module 500 related to the comparative example as a related art will be described. Figure 7C is a circuit structure diagram of the high frequency module 500 related to the comparative example at the time of transmission of the frequency band A. As shown in the diagram, the high frequency module 500 is provided with the switches 11 and 12, the filters 41 and 43 to 46, the inductors 21, 25, 31, and 33 to 36, the capacitors 22 and 24, the low noise amplifiers 51 and 53 to 55, the power amplifier 56, the antenna connection terminals 101 to 103, the signal output terminals 120 to 150, and the signal input terminal 160. The high frequency module 500 related to the comparative example is different from the high frequency module ID related to the modified example 4 mainly in the structure of the low pass filter 520. Therefore, hereinafter, for the high frequency module 500 related to the comparative example, the description of the same structure as the high frequency module ID related to the modified example 4 will be omitted, and the description will be made focusing on the different structure.

[0180] The inductor 25 is connected between the common path Pc and the capacitor 22. The inductors 21 and 25, and the capacitors 22 and 24 constitute the low pass filter 520.

[0181] The inductor 21 and the inductor 36 are configured not to perform magnetic field coupling. Further, the inductor 21 and the inductor 31 are configured not to perform magnetic field coupling.

[0182] As shown in the diagram, in the (1) frequency band B reception mode, the common terminal 11a is connected to the selection terminal 11b, and the common terminal 12f is connected to the selection terminal 12b. In this circuit state, the signal of the frequency band B is outputted from the signal output terminal 120 through the antenna 2a, the switch 11, the low pass filter 20D, the switch 12, the inductor 31, the filter 41, and the low noise amplifier 51. At this time, although the signal flows through the inductors 21 and 31, the inductor 21 and the inductor 31 are configured not to perform magnetic field coupling, and thus no mutual inductance is generated between the inductor 21 and the inductor 31. Figure 7CAs shown, in the high-frequency module 500, in the (1) band A transmission mode, the common terminal 11a is connected to the selection terminal 11b, and the common terminal 12f is connected to the selection terminal 12a. In this circuit state, the signal of the band A is outputted from the antenna 2a through the signal input terminal 160, the power amplifier 56, the filter 46, the inductor 36, the switch 12, the low-pass filter 520, and the switch 11. At this time, the inductor 21 does not perform magnetic field coupling with the inductor 36, and thus does not add the inductance generated by the magnetic field coupling of the inductor 21 and the inductor 36 to the low-pass filter 520. Therefore, in the high-frequency module 500, the inductor 25 is provided as a circuit structure.

[0183] Figure 8 A graph showing the band-pass characteristics of the low-pass filter 20D of the high-frequency module ID related to Modification Example 4 and the low-pass filter 520 of the high-frequency module 500 related to the comparative example is shown in the graph. In the graph, the band-pass characteristics of the low-pass filter 20D (520) in the (1) band A transmission mode of the high-frequency module ID, the (2) band A reception mode of the high-frequency module ID, and the (3) band A transmission mode and the band A reception mode of the high-frequency module 500 are shown.

[0184] In the case of the band A transmission mode, in both the high-frequency module ID and the high-frequency module 500, the frequency f T forms an attenuation pole. In the high-frequency module 500, an LC series resonance circuit is formed by the inductor 25 and the capacitor 22 between the common path Pc and the ground. On the other hand, in the high-frequency module ID, an LC series resonance circuit is formed by the equivalent inductor (+M1) and the capacitor 22 between the common path Pc and the ground. Since the equivalent inductor added to the high-frequency module ID has no resistance loss, the Q value of the LC series resonance circuit can be made high, and thus the sharpness of the above-mentioned attenuation pole (the frequency f T ) can be improved. Along therewith, the high-frequency module ID can reduce the insertion loss at the high-frequency end of the passband of the low-pass filter 20D (reduce the so-called shoulder drop) compared to the high-frequency module 500.

[0185] In addition, in the high-frequency module ID, the above-mentioned equivalent inductor is not generated at the time of reception, and thus the insertion loss of the low-pass filter 20D can be reduced compared to the high-frequency module 500 in the band A reception mode.

[0186] Further, in the band A reception mode of the high-frequency module ID, the inductors 21 and 32 can be configured to generate mutual inductance (+M2). Thereby, the equivalent inductor of the mutual inductance (-M2) between the common path Pc and the capacitor 22 can be added, and the insertion loss of the low-pass filter 20D can be further reduced.

[0187] [7Effects and the like]

[0188] As described above, the high-frequency module 1 according to the embodiment has the switch 11 having the selection terminal 11b connected to the antenna 2a, the selection terminal 11c connected to the antenna 2b, and the common terminal 11a, the switch 12 having the selection terminals 12a, 12b, and the common terminal 12f, the filters 41 and 42, the inductor 21 connected to the common path Pc connecting the common terminal 11a and the common terminal 12f, the inductor 31 connected to the signal path P1 connecting the selection terminal 12a and the filter 41, and the inductor 32 connected to the signal path P2 connecting the selection terminal 12b and the filter 42, wherein the distance D between the inductor 21 and the inductor 31 is smaller than the distance D between the inductor 21 and the inductor 32. 31 The distance D between the inductor 21 and the inductor 32 is smaller than the distance D between the inductor 21 and the inductor 31. 32

[0189] Thus, the plurality of signal paths connecting either one of the antennas 2a and 2b and either one of the filters 41 and 42 share the common path Pc. At this time, the inductor 21 and the inductor 31 can be magnetically coupled to generate mutual inductance (+M1), and the inductor 21 and the inductor 32 can be magnetically coupled to generate mutual inductance (+M2) different from the mutual inductance (+M1). By generating the mutual inductances as described above, it is possible to make the inductance value of the common path Pc larger than the inductance value of the inductor 21, and it is possible to make the inductance value of the signal path P1 larger than the inductance value of the inductor 31, and it is possible to make the inductance value of the signal path P2 larger than the inductance value of the inductor 32. Therefore, it is possible to make the inductance values of the inductors 21 and 31 decrease by the amount of the mutual inductance (+M1), and it is possible to make the inductance values of the inductors 21 and 32 decrease by the amount of the mutual inductance (+M2), and thus it is possible to reduce the resistance loss of the inductors 21, 31, and 32, and it is possible to reduce the transmission loss of the signals of the plurality of frequency bands passing through the common path Pc, the signal path P1, and the signal path P2. In addition, since the magnetic field coupling of the plurality of signal paths is individually achieved in a manner of sharing the inductor 21 disposed in the common path Pc, it is possible to miniaturize the high-frequency module 1.

[0190] In addition, for example, in the high-frequency module 1, the winding axis positive direction of the inductor 21, the winding axis positive direction of the inductor 31, and the winding axis positive direction of the inductor 32 are identical.

[0191] Thus, it is possible to make the mutual inductance (+M1) larger than the mutual inductance (+M2).

[0192] ​Further, for example, the high-frequency module 1A according to the modified example 1 includes: the switch 11 having the selection terminal 11b connected to the antenna 2a, the selection terminal 11c connected to the antenna 2b, and the common terminal 11a; the switch 12 having the selection terminals 12a, 12b, and the common terminal 12f; the filters 41 and 42; the inductor 21 connected to the common path Pc connecting the common terminal 11a and the common terminal 12f; the inductor 31 connected to the signal path P1 connecting the selection terminal 12a and the filter 41; and the inductor 32A connected to the signal path P2 connecting the selection terminal 12b and the filter 42, wherein the angle formed by the winding axis positive direction of the inductor 21 and the winding axis positive direction of the inductor 31 is smaller than the angle formed by the winding axis positive direction of the inductor 21 and the winding axis positive direction of the inductor 32A.

[0193] Thus, the plurality of signal paths connecting either one of the antennas 2a and 2b and either one of the filters 41 and 42 share the common path Pc. At this time, the inductor 21 and the inductor 31 can be magnetically coupled to generate mutual inductance (+M1), and the inductor 21 and the inductor 32A can be magnetically coupled to generate mutual inductance (+M2) different from the mutual inductance (+M1). By generating the mutual inductances as described above, the inductance value of the common path Pc can be made larger than the inductance value of the inductor 21, the inductance value of the signal path P1 can be made larger than the inductance value of the inductor 31, and the inductance value of the signal path P2 can be made larger than the inductance value of the inductor 32A, so that the resistance loss of the inductors 21, 31, and 32A can be reduced, and the transmission loss of the signals of the plurality of frequency bands passing through the common path Pc, the signal path P1, and the signal path P2 can be reduced. Further, since the magnetic field coupling of the plurality of signal paths is individually achieved by sharing the inductor 21 disposed in the common path Pc, the high-frequency module 1A can be miniaturized.

[0194] Further, for example, in the high-frequency module 1A, the winding axis positive direction of the inductor 21 coincides with the winding axis positive direction of the inductor 31, the winding axis positive direction of the inductor 21 coincides with the winding axis negative direction of the inductor 32, and the distance D 31 between the inductor 21 and the inductor 32A 32 is smaller than the distance D

[0195] Thus, the mutual inductance (+M1) can be made larger than the mutual inductance (-M2).

[0196] Further, for example, the high-frequency module 1B according to the modified example 2 includes: the switch 11 having the selection terminal 11b connected to the antenna 2a, the selection terminal 11c connected to the antenna 2b, and the common terminal 11a; the switch 12 having the selection terminals 12a, 12b, and the common terminal 12f; the filters 41 and 42; the inductor 21 connected to the common path Pc connecting the common terminal 11a and the common terminal 12f; the inductor 31 connected to the signal path P1 connecting the selection terminal 12a and the filter 41; the inductor 32 connected to the signal path P2 connecting the selection terminal 12b and the filter 42; and the metal member disposed between the inductor 21 and the inductor 32.

[0197] Thus, the plurality of signal paths connecting either one of the antennas 2a and 2b and either one of the filters 41 and 42 share the common path Pc. At this time, the inductor 21 and the inductor 31 can be magnetically coupled to generate mutual inductance (+M1), and the inductor 21 and the inductor 32 can be magnetically coupled to generate mutual inductance (+M2) different from the mutual inductance (+M1). By generating the mutual inductances as described above, it is possible to make the inductance value of the common path Pc larger than the inductance value of the inductor 21, and to make the inductance value of the signal path P1 larger than the inductance value of the inductor 31, and to make the inductance value of the signal path P2 larger than the inductance value of the inductor 32, and thus it is possible to reduce the resistance loss of the inductors 21, 31, and 32, and to reduce the transmission loss of the signals of the plurality of frequency bands passing through the common path Pc, the signal path P1, and the signal path P2. Further, since the magnetic field coupling of the plurality of signal paths is individually realized in a manner of sharing the inductor 21 disposed in the common path Pc, it is possible to miniaturize the high-frequency module 1B.

[0198] Further, for example, the high-frequency module 1B further includes the module substrate 70 having the main surfaces 70a and 70b facing each other, the inductors 21, 31, and 32 are disposed on the main surface 70a, and the metal member is a ground metal plate 93 vertically disposed between the inductors 21 and 31 and the inductor 32 when the main surface 70a is viewed in plan.

[0199] Thus, it is possible to make the mutual inductance (+M1) larger than the mutual inductance (+M2).

[0200] Further, for example, in the high-frequency modules 1, 1A, and 1B, the switches 11 and 12 are included in the semiconductor IC 81, the inductors 21, 31, and 32 are disposed on the main surface 70a, and the semiconductor IC 81 is disposed on the main surface 70b.

[0201] Thus, the inductors 21, 31, and 32, and the switches 11 and 12 are separately disposed on both surfaces of the module substrate 70, and thus it is possible to miniaturize the high-frequency modules 1, 1A, and 1B.

[0202] Further, for example, in the high-frequency module 1, 1A, and 1B, at least one of the inductors 31 and 32 overlaps the semiconductor IC 81 when the module substrate 70 is viewed from above.

[0203] Thus, the wiring connected to the selection terminal side of the switch 12 can be shortened, and thus the transmission loss of the high-frequency module 1, 1A, and 1B can be reduced.

[0204] Further, for example, in the high-frequency module 1, 1A, and 1B, the inductor 21 overlaps the semiconductor IC 81 when the module substrate 70 is viewed from above.

[0205] Thus, the wiring connected to the common terminal side of the switch 12 can be shortened, and thus the transmission loss of the high-frequency module 1, 1A, and 1B can be reduced.

[0206] Further, for example, in the high-frequency module 1, 1A, and 1B, one end of the inductor 21 is connected to the common terminal 11a, the other end of the inductor 21 is connected to the common terminal 12f, and a capacitor 22 connected between the common path Pc and the ground is further provided.

[0207] Thus, the inductor 21 and the capacitor 22 constitute a low-pass filter 20, and by connection switching of the switch 12, a first mutual inductance or a second mutual inductance can be generated. Thus, the passband width, the frequency of the attenuation pole, and the attenuation amount of the low-pass filter 20, and the like can be changed.

[0208] Further, for example, the high-frequency module 1C related to the modified example 3 further includes a capacitor 23 connected in parallel to the inductor 21.

[0209] Thus, a negative mutual inductance (-M1) between the common path Pc and the capacitor 22 can be generated by the magnetic field coupling of the inductor 21 and the inductor 31, and a sharp attenuation pole of the low-pass filter 20C can be generated by LC resonance caused by the mutual inductance (-M1) and the capacitor 22. Thus, the generation frequencies of the attenuation poles can be made different by the magnetic field coupling of the inductor 21 and the inductor 31, and the magnetic field coupling of the inductor 21 and the inductor 32.

[0210] Further, for example, in the high-frequency module 1C, in a case where the common terminal 12f is connected to the selection terminal 12a and the common terminal 12f and the selection terminal 12b are set to be non-connected, a first attenuation pole (f A ) is generated in the bandpass characteristic of the common path Pc, and in a case where the common terminal 12f and the selection terminal 12a are set to be non-connected and the common terminal 12f and the selection terminal 12b are connected, a second attenuation pole (f A ) that is on the low-frequency side compared to the first attenuation pole (f B ) is generated in the bandpass characteristic of the common path Pc.

[0211] Thus, by causing the inductor 21 of the low-pass filter 20C to be magnetically coupled with the inductor 31 arranged in the signal path Pl and the inductor 32 arranged in the signal path P2, respectively, the passband width, the frequency of the attenuation pole, and the like of the low-pass filter 20C can be optimized for each signal path.

[0212] Further, for example, the high-frequency module 1, 1A, 1B, and 1C further includes the coupler 60 arranged in the common path Pc.

[0213] Thus, by arranging only one coupler 60 for measuring the power of the signal in the common path Pc, the power of the signal transmitted in the plurality of signal paths can be measured, and thus the high-frequency module 1, 1A, 1B, and 1C can be miniaturized.

[0214] Further, for example, the high-frequency module 1, 1A, 1B, and 1C further includes an antenna connection terminal 101 connected between the antenna 2a and the selection terminal lib, and an antenna connection terminal 102 connected between the antenna 2b and the selection terminal lie, and the chip inductor is not connected in the signal path connecting the antenna connection terminal 101 and the selection terminal lib, and the signal path connecting the antenna connection terminal 102 and the selection terminal lie.

[0215] Thus, the inductor 21 can be used as a matching element of the antenna 2a and the high-frequency module 1 (and 1A, 1B, 1C), and a matching element of the antenna 2b and the high-frequency module 1 (and 1A, 1B, 1C), and thus the high-frequency module 1, 1A, 1B, and 1C can be miniaturized.

[0216] Further, for example, in the high-frequency module 1, 1A, 1B, and 1C, the switch 11 further includes a selection terminal lie connected to the diversity circuit 9 other than the high-frequency module 1 (and 1A, 1B, 1C), and can be connected to at least one of the selection terminals lib and lie.

[0217] Thus, the inductor is not arranged in the signal path connecting the antennas 2a and 2b and the diversity circuit 9, and thus the transmission loss of the signal path can be reduced.

[0218] (Other Embodiments, etc.)

[0219] The high-frequency module and the communication apparatus according to the present application are not limited to the above-described embodiments and modifications. Other embodiments realized by combining any of the constituent elements of the above-described embodiments and modifications, modifications obtained by applying various modifications conceivable by those skilled in the art to the above-described embodiments and modifications within the scope of the gist of the present application, and various devices in which the above-described high-frequency module is built are also included in the present application.

[0220] For example, in the high-frequency module and the communication apparatus according to the above-described embodiments and modifications, other circuit elements and wirings or the like can be inserted between the paths disclosed in the drawings that connect the circuit elements and the signal paths.

[0221] Next, features of the high-frequency module described based on the above-described embodiments are shown.

[0222] <1>

[0223] A high-frequency module includes:

[0224] a first switch having a first selection terminal connected to a first antenna, a second selection terminal connected to a second antenna, and a first common terminal;

[0225] a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal;

[0226] a first filter and a second filter;

[0227] a first inductor connected to a common path connecting the first common terminal and the second common terminal;

[0228] a second inductor connected to a first path connecting the third selection terminal and the first filter; and

[0229] a third inductor connected to a second path connecting the fourth selection terminal and the second filter,

[0230] wherein a distance between the first inductor and the second inductor is smaller than a distance between the first inductor and the third inductor.

[0231] <2>

[0232] The high-frequency module according to <1>, wherein

[0233] the winding axis positive direction of the first inductor, the winding axis positive direction of the second inductor, and the winding axis positive direction of the third inductor are identical.

[0234] <3>

[0235] A high-frequency module comprising:

[0236] a first switch having a first selection terminal connected to a first antenna, a second selection terminal connected to a second antenna, and a first common terminal;

[0237] a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal;

[0238] a first filter and a second filter;

[0239] a first inductor connected to a common path connecting the first common terminal and the second common terminal;

[0240] a second inductor connected to a first path connecting the third selection terminal and the first filter; and

[0241] a third inductor connected to a second path connecting the fourth selection terminal and the second filter,

[0242] wherein an angle formed by a winding axis positive direction of the first inductor and a winding axis positive direction of the second inductor is smaller than an angle formed by the winding axis positive direction of the first inductor and a winding axis positive direction of the third inductor.

[0243] <4>

[0244] The high-frequency module according to <3>, wherein

[0245] the winding axis positive direction of the first inductor coincides with the winding axis positive direction of the second inductor,

[0246] the winding axis positive direction of the first inductor coincides with a winding axis negative direction of the third inductor,

[0247] a distance between the first inductor and the second inductor is smaller than a distance between the first inductor and the third inductor.

[0248] <5>

[0249] A high-frequency module comprising:

[0250] a first switch having a first selection terminal connected to a first antenna, a second selection terminal connected to a second antenna, and a first common terminal;

[0251] a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal;

[0252] a first filter and a second filter;

[0253] a first inductor connected to a common path linking the first common terminal and the second common terminal;

[0254] a second inductor connected to a first path linking the third selection terminal and the first filter;

[0255] a third inductor connected to a second path linking the fourth selection terminal and the second filter; and

[0256] a metal member disposed between the first inductor and the third inductor.

[0257] <6>

[0258] The high-frequency module according to <5>, wherein

[0259] Further comprising a module substrate having a first main surface and a second main surface facing each other,

[0260] the first inductor, the second inductor, and the third inductor are disposed on the first main surface,

[0261] the metal member is a ground metal plate vertically disposed between the first inductor and the second inductor and the third inductor when the first main surface is viewed in plan.

[0262] <7>

[0263] The high-frequency module according to any one of <1> to <5>, wherein

[0264] Further comprising a module substrate having a first main surface and a second main surface facing each other,

[0265] the first switch and the second switch are included in a first semiconductor IC,

[0266] the first inductor, the second inductor, and the third inductor are disposed on the first main surface,

[0267] the first semiconductor IC is disposed on the second main surface.

[0268] <8>

[0269] The high-frequency module according to <7>, wherein

[0270] at least one of the second inductor and the third inductor overlaps the first semiconductor IC when the module substrate is viewed in plan.

[0271] <9>

[0272] The high-frequency module according to <7>, wherein

[0273] The first inductor overlaps the first semiconductor IC when the module substrate is viewed from above.

[0274] <10>

[0275] The high-frequency module according to any one of <1> to <9>, wherein

[0276] One end of the first inductor is connected to the first common terminal,

[0277] The other end of the first inductor is connected to the second common terminal,

[0278] The high-frequency module further includes a first capacitor connected between the common path and ground.

[0279] <11>

[0280] The high-frequency module according to <10>, wherein

[0281] Further includes a second capacitor connected in parallel to the first inductor.

[0282] <12>

[0283] The high-frequency module according to <11>, wherein

[0284] In a case where the second common terminal is connected to the third selection terminal and the second common terminal is set to be non-connected to the fourth selection terminal, a first attenuation pole is generated in a band-pass characteristic of the common path,

[0285] In a case where the second common terminal is set to be non-connected to the third selection terminal and the second common terminal is connected to the fourth selection terminal, a second attenuation pole on a low-frequency side compared to the first attenuation pole is generated in the band-pass characteristic of the common path.

[0286] <13>

[0287] The high-frequency module according to any one of <1> to <12>, wherein

[0288] Further includes a coupler disposed in the common path.

[0289] <14>

[0290] The high-frequency module according to any one of <1> to <13>, wherein further includes:

[0291] a first antenna connection terminal connected between the first antenna and the first selection terminal; and

[0292] a second antenna connection terminal connected between the second antenna and the second selection terminal,

[0293] a chip inductor is not connected in a path connecting the first antenna connection terminal and the first selection terminal, and a path connecting the second antenna connection terminal and the second selection terminal.

[0294] <15>

[0295] The high-frequency module according to <14>, wherein

[0296] The first switch further has an external connection terminal connected to an external circuit outside the high-frequency module and connectable to at least one of the first selection terminal and the second selection terminal.

[0297] Industrial applicability

[0298] The present application can be widely used for communication devices such as portable telephones as a high-frequency module arranged at a front end.

[0299] Explanation of reference numerals

[0300] 1, 1A, 1B, 1C, 1D, 500: high-frequency module; 2a, 2b, 2c: antenna; 3: RF signal processing circuit (RFIC); 4: communication device; 9: diversity circuit; 11, 12, 19: switch; 11a, 12f: common terminal; 11b, 11c, 11d, 11e, 12a, 12b, 12c, 12d, 12e: selection terminal; 20, 20C, 20D, 520: low-pass filter; 21, 25, 31, 32, 32A, 33, 34, 35, 36, 39: inductor; 22, 23, 24: capacitor; 41, 42, 43, 44, 45, 46, 49: filter; 51, 52, 53, 54, 55, 59: low-noise amplifier; 56: power amplifier; 60: coupler; 70: module substrate; 70a, 70b: main surface; 81: semiconductor IC; 85, 86: resin member; 91, 92, 104: external connection terminal; 93: ground metal plate; 95: shield electrode layer; 101, 102, 103: antenna connection terminal; 105, 110, 120, 130, 140, 150: signal output terminal; 160: signal input terminal; P1, P2, P3: signal path; Pc: common path.

Claims

1. A high-frequency module comprising: a first switch having a first selection terminal connected to a first antenna, a second selection terminal connected to a second antenna, and a first common terminal; a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; and a third inductor connected to a second path connecting the fourth selection terminal and the second filter, wherein a distance between the first inductor and the second inductor is smaller than a distance between the first inductor and the third inductor.

2. The high-frequency module according to claim 1, wherein a winding axis positive direction of the first inductor, a winding axis positive direction of the second inductor, and a winding axis positive direction of the third inductor are identical.

3. A high-frequency module comprising: a first switch having a first selection terminal connected to a first antenna, a second selection terminal connected to a second antenna, and a first common terminal; a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; and a third inductor connected to a second path connecting the fourth selection terminal and the second filter, wherein an angle between a winding axis positive direction of the first inductor and a winding axis positive direction of the second inductor is smaller than an angle between the winding axis positive direction of the first inductor and a winding axis positive direction of the third inductor.

4. The high-frequency module according to claim 3, wherein the winding axis positive direction of the first inductor and the winding axis positive direction of the second inductor are identical, the winding axis positive direction of the first inductor and a winding axis negative direction of the third inductor are identical, and a distance between the first inductor and the second inductor is smaller than a distance between the first inductor and the third inductor.

5. A high-frequency module comprising: a first switch having a first selection terminal connected to a first antenna, a second selection terminal connected to a second antenna, and a first common terminal; a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; a third inductor connected to a second path connecting the fourth selection terminal and the second filter; and a metal member disposed between the first inductor and the third inductor.

6. The high-frequency module according to claim 5, wherein ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ Further provided is a module substrate having first and second main surfaces facing each other, The first, second, and third inductors are arranged on the first main surface, The metal member is a ground metal plate vertically arranged between the first and second inductors and the third inductor when the first main surface is viewed in plan.

7. The high-frequency module according to any one of claims 1 to 5, wherein Further provided is a module substrate having first and second main surfaces facing each other, The first and second switches are included in a first semiconductor integrated circuit (first semiconductor IC), The first, second, and third inductors are arranged on the first main surface, The first semiconductor IC is arranged on the second main surface.

8. The high-frequency module according to claim 7, wherein At least one of the second and third inductors overlaps the first semiconductor IC when the module substrate is viewed in plan.

9. The high-frequency module according to claim 7, wherein The first inductor overlaps the first semiconductor IC when the module substrate is viewed in plan.

10. The high-frequency module according to any one of claims 1 to 9, wherein One end of the first inductor is connected to the first common terminal, The other end of the first inductor is connected to the second common terminal, The high-frequency module further includes a first capacitor connected between the common path and ground.

11. The high-frequency module according to claim 10, wherein A second capacitor is connected in parallel with the first inductor.

12. The high-frequency module according to claim 11, wherein When the second common terminal is connected to the third selection terminal and disconnected from the fourth selection terminal in the second switch, a first attenuation pole is generated in a band-pass characteristic of the common path, When the second common terminal is disconnected from the third selection terminal and connected to the fourth selection terminal in the second switch, a second attenuation pole on a lower frequency side than the first attenuation pole is generated in the band-pass characteristic of the common path.

13. The high-frequency module according to any one of claims 1 to 12, wherein A coupler is arranged on the common path.

14. The high-frequency module according to any one of claims 1 to 13, wherein Further provided are: a first antenna connection terminal connected between the first antenna and the first selection terminal; and a second antenna connection terminal connected between the second antenna and the second selection terminal, A chip inductor is not connected in a path connecting the first antenna connection terminal and the first selection terminal, and a path connecting the second antenna connection terminal and the second selection terminal.

15. The high-frequency module according to claim 14, wherein The first switch further has an external connection terminal connected to an external circuit outside the high-frequency module and connectable to at least one of the first and second selection terminals.

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