Magnetic memory device including magnetic tunnel junction

Abstract

A magnetic memory device includes: a fixed magnetic pattern and a free magnetic pattern stacked on a substrate; a tunnel barrier pattern disposed between the fixed magnetic pattern and the free magnetic pattern; a capping pattern disposed on the free magnetic pattern; and a metal oxide pattern disposed between the free magnetic pattern and the capping pattern, in which the capping pattern includes a first capping pattern and a second capping pattern disposed on the first capping pattern, in which the first capping pattern includes a first non-magnetic metal, in which the second capping pattern includes a second non-magnetic metal, and in which the first non-magnetic metal and the second non-magnetic metal are separated from each other. The first capping pattern includes an oxide of a first non-magnetic metal adjacent an interface between the metal oxide pattern and the first capping pattern.

Description

Cross Reference to Related Applications

[0001] This application claims priority to Korean Patent Application No. 10-2024-0054025, filed on April 23, 2024, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. TECHNICAL FIELD

[0002] The present inventive concept relates to a magnetic memory device, and more particularly, to a magnetic memory device including a magnetic tunnel junction. BACKGROUND

[0003] With the development of high-speed and / or low-power electronic devices including semiconductor memory devices, there is a demand for high-speed and / or low-voltage semiconductor memory devices. To meet these demands, magnetic memory devices have been proposed. Generally, magnetic memory devices have high-speed and / or non-volatile characteristics, and are considered to be next-generation semiconductor memory devices.

[0004] Generally, a magnetic memory device can include a magnetic tunnel junction (MTJ) pattern. The MTJ pattern can include two magnetic layers and an insulating layer disposed therebetween. A resistance value of the MTJ pattern can change according to magnetization directions of the two magnetic layers. For example, when the magnetization directions of the two magnetic layers are anti-parallel to each other, the MTJ pattern can have a high resistance value. Further, when the magnetization directions of the two magnetic layers are parallel to each other, the MTJ pattern can have a low resistance value. Logic data can be written / read by using a difference between the high resistance value and the low resistance value of the MTJ pattern.

[0005] With the development of the electronic industry, there is an increasing demand for high-integration and / or low-power magnetic memory devices. Accordingly, magnetic memory devices capable of meeting these demands are currently being developed. SUMMARY

[0006] According to embodiments of the present inventive concept, a magnetic memory device includes a fixed magnetic pattern and a free magnetic pattern stacked on a substrate, a tunnel barrier pattern disposed between the fixed magnetic pattern and the free magnetic pattern, a capping pattern disposed on the free magnetic pattern, and a metal oxide pattern disposed between the free magnetic pattern and the capping pattern, wherein the capping pattern includes a first capping pattern and a second capping pattern disposed on the first capping pattern, wherein the first capping pattern includes a first non-magnetic metal, wherein the second capping pattern includes a second non-magnetic metal, and wherein the first capping pattern includes an oxide of the first non-magnetic metal adjacent to an interface between the metal oxide pattern and the first capping pattern.

[0007] According to embodiments of the present inventive concept, a magnetic memory device includes a fixed magnetic pattern and a free magnetic pattern stacked on a substrate, a tunnel barrier pattern disposed between the fixed magnetic pattern and the free magnetic pattern, a first capping pattern and a second capping pattern stacked on the free magnetic pattern, and a metal oxide pattern disposed between the free magnetic pattern and the first capping pattern, wherein the first capping pattern includes molybdenum (Mo), and wherein the second capping pattern includes rhenium (Re).

[0008] According to embodiments of the present inventive concept, a magnetic memory device includes a lower electrode disposed on a substrate, a fixed magnetic pattern and a free magnetic pattern stacked on the lower electrode, a tunnel barrier pattern disposed between the fixed magnetic pattern and the free magnetic pattern, a capping pattern disposed on the tunnel barrier pattern, a metal oxide pattern disposed between the capping pattern and the tunnel barrier pattern, and an upper electrode disposed on the capping pattern, wherein the capping pattern includes a first capping pattern including a first non-magnetic metal and a second capping pattern including a second non-magnetic metal and on the first capping pattern, wherein an oxide formation energy of the first non-magnetic metal is lower than an oxide formation energy of the second non-magnetic metal, and wherein a thickness of the first capping pattern is less than a thickness of the second capping pattern. BRIEF DESCRIPTION OF DRAWINGS

[0009] The above and other aspects of the present inventive concept will become more apparent by describing in detail embodiments thereof with reference to the attached drawings, in which:

[0010] Figure 1 FIG. 1 is a circuit diagram illustrating a unit memory cell of a magnetic memory device according to embodiments of the present inventive concept.

[0011] Figure 2 FIG. 2 is a cross-sectional view of a magnetic memory device according to embodiments of the present inventive concept.

[0012] Figure 3 FIG. 3 is a magnified view of a region "X" in FIG. 2. Figure 2

[0013] Figure 4 FIG. 4 is a cross-sectional view of a magnetic memory device according to embodiments of the present inventive concept. Figure 5

[0014] FIG. 5 is a plan view of a magnetic memory device according to embodiments of the present inventive concept. Figure 6

[0015] FIG. 6 is a cross-sectional view of a magnetic memory device according to embodiments of the present inventive concept, taken along line A-A' of FIG. 5. Figure 7 Figure 6

[0016] Figure 8 ​​​is a plan view of a magnetic storage device according to an embodiment of the present inventive concept.

[0017] Figure 9 is a cross-sectional view taken along a line B-B' of a magnetic storage device according to an embodiment of the present inventive concept. Figure 8

[0018] Figure 10 , Figure 11 and Figure 12 is a cross-sectional view taken along a line A-A' to illustrate a method of manufacturing a magnetic storage device according to an embodiment of the present inventive concept. Figure 6 DETAILED DESCRIPTION

[0019] Hereinafter, embodiments of the present inventive concept will be described with reference to the accompanying drawings. Throughout the specification and the drawings, like reference numerals can refer to like elements, and thus redundant description thereof can be omitted.

[0020] Figure 1 is a circuit diagram illustrating a unit storage cell of a magnetic storage device according to an embodiment of the present inventive concept.

[0021] Referring to Figure 1 , a unit storage cell MC can include a memory device ME and a selection device SE. The memory device ME and the selection device SE can be electrically connected in series to each other. The memory device ME can be connected between a bit line BL and the selection device SE. The selection device SE can be connected between the memory device ME and a source line SL, and can be controlled by a word line WL. For example, the selection device SE can include a bipolar transistor or a MOS field effect transistor.

[0022] ​​A memory device ME may include a magnetic tunnel junction pattern MTJ, and the magnetic tunnel junction pattern MTJ may include a first magnetic pattern MP1, a second magnetic pattern MP2, and a tunnel barrier pattern TBR disposed between the first and second magnetic patterns MP1 and MP2. One of the first and second magnetic patterns MP1 and MP2 may be a fixed magnetic pattern, whose magnetization direction remains fixed in one direction regardless of an external magnetic field under normal use. The other of the first and second magnetic patterns MP1 and MP2 may be a free magnetic pattern, whose magnetization direction changes between two stable magnetization directions due to an external magnetic field. When the magnetization directions of the fixed and free magnetic patterns are antiparallel, the resistance of the magnetic tunnel junction pattern MTJ may be significantly greater than when the magnetization directions of the fixed and free magnetic patterns are parallel. For example, the resistance of the magnetic tunnel junction pattern MTJ may be adjusted by changing the magnetization direction of the free magnetic pattern. Therefore, the memory device ME can store data in a unit memory cell MC by utilizing a resistance difference depending on the magnetization directions of the fixed and free magnetic patterns.

[0023] Figure 2 is a cross-sectional view of a magnetic memory device according to an embodiment of the inventive concept. Figure 3 yes Figure 2 Magnified view of area "X".

[0024] Reference Figure 2 A first interlayer insulating layer 110 may be disposed on the substrate 100. A lower contact plug 115 may be disposed in the first interlayer insulating layer 110. The first interlayer insulating layer 110 may cover the upper surface 100U of the substrate 100 and the side surfaces of the lower contact plug 115. For example, the substrate 100 may be a semiconductor substrate including silicon, silicon-on-insulator (SOI), silicon germanium (SiGe), germanium (Ge), gallium arsenide (GaAs), etc. The first interlayer insulating layer 110 may include, for example, silicon oxide, silicon nitride, and / or silicon oxynitride.

[0025] The lower contact plug 115 may penetrate the first interlayer insulating layer 110. The lower contact plug 115 may be electrically connected to the substrate 100. The selection device SE (eg, Figure 1 The substrate 100 may include a selection device 110 (e.g., a field effect transistor). The lower contact plug 115 may be electrically connected to a terminal (e.g., a source / drain terminal) of the selection device. For example, the lower contact plug 115 may include at least one of a doped semiconductor material (e.g., doped silicon), a metal (e.g., tungsten, titanium, and / or tantalum), a metal-semiconductor compound (e.g., a metal silicide), and a conductive material (e.g., titanium nitride, tantalum nitride, and / or tungsten nitride).

[0026] The lower electrode BE, the magnetic tunnel junction pattern MTJ, and the upper electrode TE can be disposed on the lower contact plug 115. The lower electrode BE, the magnetic tunnel junction pattern MTJ, and the upper electrode TE can be sequentially stacked along a first direction Dl substantially perpendicular to the upper surface 100U of the substrate 100. The lower electrode BE can be disposed between the lower contact plug 115 and the magnetic tunnel junction pattern MTJ. The magnetic tunnel junction pattern MTJ can be disposed between the lower electrode BE and the upper electrode TE. The lower electrode BE can be electrically connected to the lower contact plug 115. The lower electrode BE can include a conductive metal nitride (e.g., titanium nitride or tantalum nitride). The upper electrode TE can include at least one of a metal (e.g., Ta, W, Ru, Ir, etc.) and / or a conductive metal nitride (e.g., TiN).

[0027] The magnetic tunnel junction pattern MTJ can include a fixed magnetic pattern 130, a free magnetic pattern 140, and a tunnel barrier pattern TBR disposed between the fixed magnetic pattern 130 and the free magnetic pattern 140. The fixed magnetic pattern 130 can be disposed between the lower electrode BE and the tunnel barrier pattern TBR. The free magnetic pattern 140 can be disposed between the upper electrode TE and the tunnel barrier pattern TBR. The magnetic tunnel junction pattern MTJ can also include a seed pattern 120 disposed between the lower electrode BE and the fixed magnetic pattern 130, a capping pattern 160 disposed between the upper electrode TE and the free magnetic pattern 140, and a metal oxide pattern 150 disposed between the capping pattern 160 and the free magnetic pattern 140.

[0028] The seed pattern 120 can include a material that facilitates crystal growth of the fixed magnetic pattern 130. For example, the seed pattern 120 can include at least one of chromium (Cr), iridium (Ir), and / or ruthenium (Ru).

[0029] The fixed magnetic pattern 130 can have a magnetization direction 130MD fixed in one direction. The magnetization direction 130MD of the fixed magnetic pattern 130 can be substantially perpendicular to an interface between the tunnel barrier pattern TBR and the free magnetic pattern 140. For example, the free magnetic pattern 140 can have a first surface 140S1 and a second surface 140S2 facing each other. The first surface 140S1 of the free magnetic pattern 140 can be adjacent to the tunnel barrier pattern TBR. For example, the first surface 140S1 of the free magnetic pattern 140 can contact the tunnel barrier pattern TBR. The second surface 140S2 of the free magnetic pattern 140 can be adjacent to the metal oxide pattern 150. For example, the second surface 140S2 of the free magnetic pattern 140 can contact the metal oxide pattern 150. The first surface 140S1 of the free magnetic pattern 140 can be an interface at which the tunnel barrier pattern TBR and the free magnetic pattern 140 contact each other. The second surface 140S2 of the free magnetic pattern 140 can be an interface at which the metal oxide pattern 150 and the free magnetic pattern 140 contact each other. The magnetization direction 130MD of the fixed magnetic pattern 130 can be substantially perpendicular to the first surface 140S1 of the free magnetic pattern 140.

[0030] The fixed magnetic pattern 130 can include a magnetic element. The fixed magnetic pattern 130 can include, for example, at least one of iron (Fe), cobalt (Co), and / or nickel (Ni). The fixed magnetic pattern 130 can include at least one of an intrinsic perpendicular magnetic material and / or an extrinsic perpendicular magnetic material.

[0031] The intrinsic perpendicular magnetic material can include a material that exhibits a perpendicular magnetization characteristic even without an external cause. For example, the intrinsic perpendicular magnetic material can include a perpendicular magnetic material (e.g., CoFeTb, CoFeGd, or CoFeDy), a perpendicular magnetic material having an L 10 structure, a CoPt material having a hexagonal close-packed lattice structure, and / or at least one of a perpendicular magnetic structure. For example, the perpendicular magnetic material having an L 10 structure can include an L 10 FePt, an L 10 FePd, an L 10 CoPd, or an L 10 CoPt. The perpendicular magnetic structure can include magnetic layers and non-magnetic layers alternately and repeatedly stacked with each other. For example, the perpendicular magnetic structure can include at least one of (Co / Pt)n, (CoFe / Pt)n, (CoFe / Pd)n, (Co / Pd)n, (Co / Ni)n, (CoNi / Pt)n, (CoCr / Pt)n, or (CoCr / Pd)n, where "n" is a natural number equal to or greater than 2.

[0032] The extrinsic perpendicular magnetic material can include a material that has intrinsic in-plane magnetization properties but has perpendicular magnetization properties due to an external cause. For example, the extrinsic perpendicular magnetic material can have perpendicular magnetization properties due to magnetic anisotropy caused by the junction of the fixed magnetic pattern 130 and the tunnel barrier pattern TBR. For example, the extrinsic perpendicular magnetic material can include CoFeB. The fixed magnetic pattern 130 can include a cobalt (Co)-based Heusler alloy.

[0033] The tunnel barrier pattern TBR can include a metal oxide layer. For example, the tunnel barrier pattern TBR can include at least one of a magnesium oxide (Mg) layer, a titanium oxide (Ti) layer, an aluminum oxide (Al) layer, a magnesium-zinc oxide (Mg-Zn) layer, or a magnesium-boron oxide (Mg-B) layer.

[0034] The free magnetic pattern 140 can have a magnetization direction 140MD that is capable of changing to be parallel or anti-parallel to the magnetization direction 130MD of the fixed magnetic pattern 130. The magnetization direction 140MD of the free magnetic pattern 140 can be substantially perpendicular to an interface between the tunnel barrier pattern TBR and the free magnetic pattern 140. For example, the magnetization direction 140MD of the free magnetic pattern 140 can be substantially perpendicular to a first surface 140S1 of the free magnetic pattern 140.

[0035] According to embodiments of the inventive concepts, the free magnetic pattern 140 can include a first free magnetic pattern 142 adjacent to the tunnel barrier pattern TBR, and a second free magnetic pattern 144 separated from the tunnel barrier pattern TBR by the first free magnetic pattern 142. The second free magnetic pattern 144 can be adjacent to the metal oxide pattern 150. The first free magnetic pattern 142 can be disposed between the tunnel barrier pattern TBR and the second free magnetic pattern 144. The second free magnetic pattern 144 can be disposed between the first free magnetic pattern 142 and the metal oxide pattern 150.

[0036] Each of the first free magnetic pattern 142 and the second free magnetic pattern 144 can include a magnetic element. For example, the first free magnetic pattern 142 can include at least one of iron (Fe), cobalt (Co), and / or nickel (Ni). For example, the first free magnetic pattern 142 can include cobalt iron (CoFe). Further, the first free magnetic pattern 142 can include a perpendicular magnetic material (e.g., CoFeTb, CoFeGd, CoFeDy), a material with L 10The perpendicular magnetic material of the structure, CoPt having a hexagonal close-packed lattice structure, and / or at least one of the perpendicular magnetic materials. The second free magnetic pattern 144 can include a magnetic material having a perpendicular magnetization characteristic due to a magnetic anisotropy caused at an interface between the second free magnetic pattern 144 and the first free magnetic pattern 142 and / or at an interface between the second free magnetic pattern 144 and the metal oxide pattern 150. For example, the second free magnetic pattern 144 can include cobalt iron boron (CoFeB). Each of the first free magnetic pattern 142 and the second free magnetic pattern 144 can include a cobalt (Co)-based Heusler alloy. However, the inventive concept is not limited thereto.

[0037] The metal oxide pattern 150 can be disposed between the second free magnetic pattern 144 and the capping pattern 160. The metal oxide pattern 150 can be used to increase a perpendicular magnetic anisotropy of the free magnetic pattern 140. The metal oxide pattern 150 can have an upper surface 150U and a lower surface 150L facing each other in the first direction D1. The lower surface 150L of the metal oxide pattern 150 can correspond to the second surface 140S2 of the free magnetic pattern 140. For example, the metal oxide pattern 150 can include one of magnesium (Mg), tungsten (W), tantalum (Ta), titanium (Ti), and hafnium (Hf), or oxygen (O).

[0038] The capping pattern 160 can be disposed on the metal oxide pattern 150. The capping pattern 160 can include a first capping pattern 162 adjacent to the metal oxide pattern 150, and a second capping pattern 164 separated from the metal oxide pattern 150 by the first capping pattern 162. The first capping pattern 162 can be disposed between the metal oxide pattern 150 and the second capping pattern 164. The second capping pattern 164 can be disposed between the first capping pattern 162 and the upper electrode TE. The second capping pattern 164 can be disposed on the first capping pattern 162. For example, the first capping pattern 162 and the second capping pattern 164 can contact each other.

[0039] The first capping pattern 162 and the second capping pattern 164 can have different thicknesses from each other. The first capping pattern 162 can have a first thickness T1 in the first direction D1. The second capping pattern 164 can have a second thickness T2 in the first direction D1. The first thickness T1 can be less than the second thickness T2. For example, the first thickness T1 can be about 2 Å to about 20 Å, and the second thickness T2 can be about 5 Å to about 30 Å.

[0040] Referring to Figure 3The first capping pattern 162 can include a first non-magnetic metal. The second capping pattern 164 can include a second non-magnetic metal different from the first non-magnetic metal. An oxide formation energy of the first non-magnetic metal can be lower than an oxide formation energy of the second non-magnetic metal. In this specification, the oxide formation energy can be defined as an energy of a product minus an energy of a reactant (i.e., E oxide formation = E product - E reactant). Also, as the oxide formation energy decreases, it can be easier to form an oxide, and as the oxide formation energy increases, it can be more difficult to form an oxide. For example, the first capping pattern 162 can react with oxygen more easily than the second capping pattern 164, and can be oxidized more easily than the second capping pattern 164.

[0041] For example, a coefficient of thermal expansion of the first non-magnetic metal can be less than a coefficient of thermal expansion of the second non-magnetic metal. Also, a boiling point of the second non-magnetic metal can be higher than a boiling point of the first non-magnetic metal. Thus, at a high temperature, the first capping pattern 162 can expand less, and the second capping pattern 164 can well maintain its crystal structure.

[0042] The first capping pattern 162 can include a first portion 162a adjacent to the metal oxide pattern 150, and a second portion 162b disposed on the first portion 162a. The first portion 162a can be disposed between the metal oxide pattern 150 and the second portion 162b. Since the first capping pattern 162 and the metal oxide pattern 150 are in contact with each other, an interface IF at which the first capping pattern 162 and the metal oxide pattern 150 are in contact can correspond to the upper surface 150U of the metal oxide pattern 150. For example, the first portion 162a can be adjacent to the interface IF at which the first capping pattern 162 and the metal oxide pattern 150 are in contact, and the second portion 162b can be separated from the interface IF by the first portion 162a.

[0043] The first portion 162a can be formed by a high-temperature heat treatment process performed after forming the magnetic tunnel junction pattern MTJ. For example, oxygen in the metal oxide pattern 150 can diffuse due to the high-temperature heat treatment process. The oxygen in the metal oxide pattern 150 can combine with the first non-magnetic metal adjacent to the interface IF at which the first capping pattern 162 and the metal oxide pattern 150 are in contact with each other. As a result, the first portion 162a can be formed adjacent to the interface IF at which the first capping pattern 162 and the metal oxide pattern 150 are in contact with each other. In other words, the first portion 162a can include the first non-magnetic metal and an oxide of the first non-magnetic metal combined with oxygen. The second portion 162b can include only the first non-magnetic metal.

[0044] The first portion 162a can be formed to be very thin. Accordingly, the thickness of the first portion 162a can be less than the thickness of the second portion 162b. For example, the first portion 162a can not be identifiable in an image of a scanning electron microscope (SEM) or a transmission electron microscope (TEM). Also, the first portion 162a can be identified by using electron energy loss spectroscopy (EELS) or X-ray photoelectron spectroscopy (XPS).

[0045] According to an embodiment of the inventive concept, the first non-magnetic metal of the first capping pattern 162 can be molybdenum (Mo), and the second non-magnetic metal of the second capping pattern 164 can be rhenium (Re). In this case, the first portion 162a of the first capping pattern 162 can include molybdenum oxide.

[0046] According to an embodiment of the inventive concept, the first capping pattern 162 can further include a metal different from the first non-magnetic metal. In this case, the first capping pattern 162 can further include any one of tantalum (Ta), tungsten (W), iridium (Ir), ruthenium (Ru), or hafnium (Hf).

[0047] Referring again to FIG. 1, Figure 2 The second interlayer insulating layer 180 can be disposed on the first interlayer insulating layer 110. The second interlayer insulating layer 180 can cover side surfaces of the lower electrode BE, the magnetic tunnel junction pattern MTJ, and the upper electrode TE. For example, the second interlayer insulating layer 180 can include substantially the same material as the first interlayer insulating layer 110, but the inventive concept is not limited thereto.

[0048] The upper wiring 200 can be disposed on the second interlayer insulating layer 180. The upper wiring 200 can be connected to the upper electrode TE. The upper wiring 200 can be connected to the magnetic tunnel junction pattern MTJ through the upper electrode TE. The upper wiring 200 can function as a bit line BL of the memory cell. Figure 1 For example, the upper wiring 200 can include at least one of a metal and / or a conductive metal nitride.

[0049] For example, the first capping pattern 162 can function as a barrier that suppresses diffusion of oxygen in the metal oxide pattern 150. As a result, diffusion of oxygen in the metal oxide pattern 150 to the second capping pattern 164 and the upper electrode TE can be prevented or reduced. Further, since the first non-magnetic metal of the first capping pattern 162 has a relatively low coefficient of thermal expansion, the influence of thermal expansion of the first capping pattern 162 can be relatively small. Since the second non-magnetic metal of the second capping pattern 164 has a relatively high boiling point, the perpendicular magnetic anisotropy can be easily maintained due to the second capping pattern 164 even at high temperatures. As a result, deterioration of the switching characteristics of the magnetic tunnel junction pattern MTJ can be prevented, and the durability of the magnetic tunnel junction pattern MTJ at high temperatures can be improved. Thus, the heat resistance of the magnetic tunnel junction pattern MTJ can be improved.

[0050] Figure 4 and Figure 5 is a cross-sectional view of a magnetic storage device according to an embodiment of the inventive concepts.

[0051] Hereinafter, the description of elements identical to those described with reference to Figure 2 and Figure 3 will be omitted or briefly discussed, and the differences will be described.

[0052] With reference to Figure 4 , the capping pattern 160 can not include the first capping pattern and the second capping pattern. For example, the capping pattern 160 can be provided as one layer. The capping pattern 160 can include the first non-magnetic metal and the second non-magnetic metal. For example, the capping pattern 160 can be an alloy formed of two or more metal elements. For example, the first non-magnetic metal can include molybdenum. For example, the second non-magnetic metal can include at least one of rhenium and / or tantalum.

[0053] The capping pattern 160 can be disposed on the upper surface 150U of the metal oxide pattern 150. For example, the capping pattern 160 can be in contact with the upper surface 150U of the metal oxide pattern 150. Thus, oxygen in the metal oxide pattern 150 can diffuse into the capping pattern 160. As described with reference to Figure 3 , the capping pattern 160 can include an oxide of the first non-magnetic metal adjacent to the upper surface 150U of the metal oxide pattern 150.

[0054] The capping pattern 160 can have a certain thickness. For example, the capping pattern 160 can have a third thickness T3 in the first direction. The third thickness T3 can be substantially equal to the sum of the first thickness T1 and the second thickness T2 in Figure 2 , but the inventive concepts are not limited thereto.

[0055] With reference to Figure 5The magnetic tunnel junction pattern MTJ can include a fixed magnetic pattern 130, a free magnetic pattern 140, and a tunnel barrier pattern TBR disposed between the fixed magnetic pattern 130 and the free magnetic pattern 140. The free magnetic pattern 140 can be disposed between the bottom electrode BE and the tunnel barrier pattern TBR. The fixed magnetic pattern 130 can be disposed between the top electrode TE and the tunnel barrier pattern TBR. The magnetic tunnel junction pattern MTJ can also include a capping pattern 160 disposed between the bottom electrode BE and the free magnetic pattern 140, and a metal oxide pattern 150 disposed between the capping pattern 160 and the free magnetic pattern 140.

[0056] The free magnetic pattern 140 can include a first free magnetic pattern 142 adjacent to the tunnel barrier pattern TBR, and a second free magnetic pattern 144 separated from the tunnel barrier pattern TBR by the first free magnetic pattern 142. The second free magnetic pattern 144 can be adjacent to the metal oxide pattern 150. The first free magnetic pattern 142 can be disposed between the tunnel barrier pattern TBR and the second free magnetic pattern 144. The second free magnetic pattern 144 can be disposed between the first free magnetic pattern 142 and the metal oxide pattern 150.

[0057] A first surface 140S1 of the free magnetic pattern 140 can be in contact with the tunnel barrier pattern TBR. The capping pattern 160 can be disposed on a second surface 140S2 of the free magnetic pattern 140. The metal oxide pattern 150 can be disposed between the second surface 140S2 of the free magnetic pattern 140 and the capping pattern 160. For example, an upper surface 150U of the metal oxide pattern 150 can correspond to the second surface 140S2 of the free magnetic pattern 140, and a lower surface 150L of the metal oxide pattern 150 can be in contact with the capping pattern 160.

[0058] The capping pattern 160 can include a first capping pattern 162 adjacent to the metal oxide pattern 150, and a second capping pattern 164 disposed on the bottom electrode BE. The first capping pattern 162 can be disposed between the metal oxide pattern 150 and the second capping pattern 164. The second capping pattern 164 can be disposed between the first capping pattern 162 and the bottom electrode BE. The first capping pattern 162 and the second capping pattern 164 can be substantially the same as the capping pattern described with reference to Figure 2 and Figure 3 For example, the first capping pattern 162 can include a first non-magnetic metal, and the second capping pattern 164 can include a second non-magnetic metal. Further, the first capping pattern 162 can include an oxide of the first non-magnetic metal adjacent to the lower surface 150L of the metal oxide pattern 150, where the first capping pattern 162 is in contact with the metal oxide pattern 150.

[0059] Figure 6 is a plan view of a magnetic storage device according to an embodiment of the present inventive concept. Figure 7 is a cross-sectional view of a magnetic storage device according to an embodiment of the present inventive concept, taken along the line A-A' of Figure 6

[0060] Referring to Figure 6 and Figure 7 , a lower wiring 102 and a lower contact 104 can be provided on the substrate 100. The lower wiring 102 can be spaced apart from an upper surface 100U of the substrate 100 in a first direction D1 substantially perpendicular to the upper surface 100U of the substrate 100. The lower contact 104 can be provided between the substrate 100 and the lower wiring 102. Each of the lower wirings 102 can be electrically connected to the substrate 100 through a corresponding one of the lower contacts 104. The lower wiring 102 and the lower contact 104 can include a metal such as copper (Cu).

[0061] A selection device SE (e.g., in Figure 1 ) can be provided in the substrate 100. For example, the selection device SE can include a field effect transistor. Each of the lower wirings 102 can be electrically connected to a corresponding one of the selection devices SE through a corresponding one of the lower contacts 104.

[0062] A lower interlayer insulating layer 106 can be provided on the substrate 100. The lower interlayer insulating layer 106 can cover the lower wiring 102 and the lower contact 104. An upper surface of an uppermost one of the lower wirings 102 can be substantially coplanar with an upper surface of the lower interlayer insulating layer 106. For example, the upper surface of the uppermost one of the lower wirings 102 can be provided at substantially the same height as the upper surface of the lower interlayer insulating layer 106. In the present specification, height refers to a distance measured from the upper surface 100U of the substrate 100 in the first direction D1. For example, the lower interlayer insulating layer 106 can include silicon oxide, silicon nitride, and / or silicon oxynitride.

[0063] A first interlayer insulating layer 110 can be provided on the lower interlayer insulating layer 106. The first interlayer insulating layer 110 can cover the uppermost one of the lower wirings 102 and the lower interlayer insulating layer 106.

[0064] ​The lower contact plugs 115 can be disposed in the first interlayer insulating layer 110. The lower contact plugs 115 can be spaced apart from each other in a second direction D2 and a third direction D3 extending in parallel with the upper surface 100U of the substrate 100. The second direction D2 and the third direction D3 can intersect each other. Each of the lower contact plugs 115 can penetrate the first interlayer insulating layer 110. The lower contact plugs 115 can be connected to corresponding ones of the lower wiring lines 102. The lower contact plugs 115 can be electrically connected to the corresponding one of the selector devices SE through the corresponding one of the lower wiring lines 102.

[0065] The data storage patterns DS can be disposed on the first interlayer insulating layer 110. The data storage patterns DS can be spaced apart from each other in the second direction D2 and the third direction D3. The data storage patterns DS can be disposed on and connected to the lower contact plugs 115, respectively.

[0066] Each of the data storage patterns DS can include a lower electrode BE, a magnetic tunnel junction pattern MTJ, and an upper electrode TE sequentially stacked on the corresponding one of the lower contact plugs 115. The lower electrode BE can be disposed between the corresponding one of the lower contact plugs 115 and the magnetic tunnel junction pattern MTJ. The magnetic tunnel junction pattern MTJ can be disposed between the lower electrode BE and the upper electrode TE. For example, the magnetic tunnel junction pattern MTJ can be configured to be substantially the same as the magnetic tunnel junction pattern MTJ described with reference to FIGS. 1A to 1C. Figures 2 to 5 The magnetic tunnel junction pattern MTJ described is substantially the same.

[0067] The magnetic tunnel junction pattern MTJ can include a fixed magnetic pattern 130, a free magnetic pattern 140, and a tunnel barrier pattern TBR disposed between the fixed magnetic pattern 130 and the free magnetic pattern 140. The fixed magnetic pattern 130 can be disposed between the lower electrode BE and the tunnel barrier pattern TBR. The free magnetic pattern 140 can be disposed between the upper electrode TE and the tunnel barrier pattern TBR. The magnetic tunnel junction pattern MTJ can further include a seed pattern 120 disposed between the lower electrode BE and the fixed magnetic pattern 130, a capping pattern 160 disposed between the upper electrode TE and the free magnetic pattern 140, and a metal oxide pattern 150 disposed between the capping pattern 160 and the free magnetic pattern 140. The free magnetic pattern 140 can include a first free magnetic pattern 142 adjacent to the tunnel barrier pattern TBR, and a second free magnetic pattern 144 disposed between the first free magnetic pattern 142 and the metal oxide pattern 150. The capping pattern 160 can include a first capping pattern 162 disposed adjacent to the metal oxide pattern 150, and a second capping pattern 164 disposed between the first capping pattern 162 and the upper electrode TE.

[0068] In the region between the data storage patterns DS, the upper surface of the first interlayer insulating layer 110 may be recessed toward the substrate 100. A protective insulating layer 170 may at least partially surround each side surface of the data storage patterns DS. The protective insulating layer 170 may cover the side surfaces of the lower electrode BE, the magnetic tunnel junction pattern MTJ, and the upper electrode TE. When viewed in a plan view, the protective insulating layer 170 may surround the side surfaces of the lower electrode BE, the magnetic tunnel junction pattern MTJ, and the upper electrode TE. The protective insulating layer 170 may extend from each side surface of the data storage pattern DS onto the recessed upper surface 110RU of the first interlayer insulating layer 110. The protective insulating layer 170 may cover the recessed upper surface 110RU of the first interlayer insulating layer 110 with a substantially uniform thickness. For example, the protective insulating layer 170 may include silicon nitride.

[0069] The second interlayer insulating layer 180 may be disposed on the first interlayer insulating layer 110. The second interlayer insulating layer 180 may be disposed on the side surfaces of the data storage pattern DS and the protective insulating layer 170. The protective insulating layer 170 may be located between the side surface of each data storage pattern DS and the second interlayer insulating layer 180. In addition, the protective insulating layer 170 may extend between the recessed upper surface 110RU of the first interlayer insulating layer 110 and the second interlayer insulating layer 180.

[0070] The upper wiring 200 may be disposed on the second interlayer insulating layer 180. Each upper wiring 200 may extend along the second direction D2. The upper wirings 200 may be spaced apart from each other in the third direction D3. Each upper wiring 200 may be connected to the data storage patterns DS adjacent to each other in the second direction D2.

[0071] Figure 8 is a plan view of a magnetic memory device according to an embodiment of the inventive concept. Figure 9 It is along Figure 8 A cross-sectional view of a magnetic memory device according to an embodiment of the inventive concept taken along line BB′.

[0072] Reference Figure 8 and Figure 9 , the lower electrode BE may be provided on the substrate 100. The selection device SE may be provided in the substrate 100. For example, the selection device SE may include a field effect transistor. The lower electrode BE may be electrically connected to the selection device SE.

[0073] A lower interlayer insulating layer 106 may be disposed on the substrate 100. The lower interlayer insulating layer 106 may cover the side surfaces of the lower electrode BE. The lower interlayer insulating layer 106 may expose the upper surface of the lower electrode BE. For example, the upper surface of the lower electrode BE may be substantially coplanar with the upper surface of the lower interlayer insulating layer 106.

[0074] The conductive line 108 can be disposed on the lower electrode BE. For example, the conductive line 108 can be in contact with and electrically connected to an upper surface of the lower electrode BE. The conductive line 108 can extend on the lower interlayer insulating layer 106 in a second direction D2 parallel to the upper surface 100U of the substrate 100. The conductive line 108 can be formed of multiple layers, but the inventive concept is not limited thereto.

[0075] A magnetic tunnel junction pattern MTJ can be disposed on the conductive line 108. An upper electrode TE can be disposed on the magnetic tunnel junction pattern MTJ. The magnetic tunnel junction pattern MTJ can be disposed between the conductive line 108 and the upper electrode TE. The magnetic tunnel junction pattern MTJ and the upper electrode TE can vertically (e.g., in the first direction D1) overlap each other.

[0076] The magnetic tunnel junction pattern MTJ can be substantially the same as the magnetic tunnel junction pattern MTJ described with reference to Figures 2 to 5 The magnetic tunnel junction pattern MTJ can include a fixed magnetic pattern 130, a free magnetic pattern 140, and a tunnel barrier pattern TBR disposed between the fixed magnetic pattern 130 and the free magnetic pattern 140. The fixed magnetic pattern 130 can be disposed between the lower electrode BE and the tunnel barrier pattern TBR. The free magnetic pattern 140 can be disposed between the upper electrode TE and the tunnel barrier pattern TBR. The magnetic tunnel junction pattern MTJ can further include a seed pattern 120 disposed between the lower electrode BE and the fixed magnetic pattern 130, a capping pattern 160 disposed between the upper electrode TE and the free magnetic pattern 140, and a metal oxide pattern 150 disposed between the capping pattern 160 and the free magnetic pattern 140. The free magnetic pattern 140 can include a first free magnetic pattern 142 adjacent to the tunnel barrier pattern TBR, and a second free magnetic pattern 144 disposed between the first free magnetic pattern 142 and the metal oxide pattern 150. The capping pattern 160 can include a first capping pattern 162 adjacent to the metal oxide pattern 150, and a second capping pattern 164 disposed between the first capping pattern 162 and the upper electrode TE.

[0077] The conductive line 108 can be configured to apply a spin-orbit torque to the magnetic tunnel junction pattern MTJ. For example, when the conductive line 108 includes a topological insulator, a current I can flow along the conductive line 108. In this case, a spin current based on the spin Hall effect (e.g., quantum spin Hall effect) can flow in a direction substantially perpendicular to an upper surface of the conductive line, and thus a spin-orbit torque can be applied to the magnetic tunnel junction pattern MTJ. Accordingly, a magnetization direction of the free magnetic pattern 140 can be switched by the spin-orbit torque.

[0078] An upper interlayer insulating layer 107 can be disposed on the conductive lines 108. The upper interlayer insulating layer 107 can cover upper surfaces of the conductive lines 108 as well as side surfaces of the magnetic tunnel junction patterns MTJ and the upper electrodes TE. For example, the upper interlayer insulating layer 107 can include silicon oxide, silicon nitride, and / or silicon oxynitride. Upper wiring lines 200 can be disposed on the upper interlayer insulating layer 107. The upper electrodes TE can be electrically connected to corresponding upper wiring lines 200.

[0079] Figures 10 to 12 is a cross-sectional view taken along a line A-A' of Figure 6 to illustrate a method of manufacturing a magnetic memory device according to an embodiment of the inventive concept.

[0080] Referring to Figure 10 , selector devices SE (e.g., in Figure 1 ) can be formed in the substrate 100. Lower wiring lines 102 and lower contacts 104 can be formed on the substrate 100. Each of the lower wiring lines 102 can be electrically connected to a corresponding one of the selector devices SE through a corresponding one of the lower contacts 104. A lower interlayer insulating layer 106 can be formed on the substrate 100 to cover the lower wiring lines 102 and the lower contacts 104. An upper surface of an uppermost one of the lower wiring lines 102 can be substantially coplanar with an upper surface of the lower interlayer insulating layer 106.

[0081] A first interlayer insulating layer 110 can be formed on the lower interlayer insulating layer 106. Lower contact plugs 115 can be formed in the first interlayer insulating layer 110. Each of the lower contact plugs 115 can penetrate the first interlayer insulating layer 110 and connect to a corresponding one of the lower wiring lines 102. A method of forming the lower contact plugs 115 can include forming lower contact holes that penetrate the first interlayer insulating layer 110, forming a lower contact layer that fills the lower contact holes on the first interlayer insulating layer 110, and planarizing the lower contact layer until an upper surface of the first interlayer insulating layer 110 is exposed.

[0082] A lower electrode layer BEL and a magnetic tunnel junction layer MTJL can be sequentially formed on the first interlayer insulating layer 110. The magnetic tunnel junction layer MTJL can include a seed layer 120L, a fixed magnetic layer 130L, a tunnel barrier layer TBRL, a free magnetic layer 140L, a metal oxide layer 150LA, and a capping layer 160L, which are sequentially stacked on the lower electrode layer BEL. The free magnetic layer 140L can include a first free magnetic layer 142L and a second free magnetic layer 144L, which are sequentially stacked on the tunnel barrier layer TBRL. The capping layer 160L can include a first capping layer 162L adjacent to the metal oxide layer 150LA, and a second capping layer 164L stacked on the first capping layer 162L. For example, the lower electrode layer BEL and the magnetic tunnel junction layer MTJL can be formed by a sputtering, chemical vapor deposition, or atomic layer deposition process.

[0083] A conductive mask pattern 175 can be formed on the magnetic tunnel junction layer MTJL. The conductive mask pattern 175 can define an area in which a magnetic tunnel junction pattern (to be described later) is to be formed. The conductive mask pattern 175 can include at least one of a metal (e.g., Ta, W, Ru, Ir, etc.) and / or a conductive metal nitride (e.g., TiN).

[0084] Referring to Figure 11 The magnetic tunnel junction layer MTJL and the lower electrode layer BEL can be etched by using the conductive mask pattern 175 as an etching mask. Accordingly, a magnetic tunnel junction pattern MTJ and a lower electrode BE can be formed on the first interlayer insulating layer 110. The lower electrode BE can be connected to a corresponding contact plug 115, and the magnetic tunnel junction pattern MTJ can be formed on the lower electrode BE.

[0085] The etching of the magnetic tunnel junction layer MTJL can include sequentially etching the cap layer 160L, the metal oxide layer 150LA, the free magnetic layer 140L, the tunnel barrier layer TBRL, the fixed magnetic layer 130L, and the seed layer 120L by using the conductive mask pattern 175 as an etching mask. As a result, a seed pattern 120, a fixed magnetic pattern 130, a tunnel barrier pattern TBR, a free magnetic pattern 140, a metal oxide pattern 150, and a cap pattern 160 can be formed in sequence on the lower electrode BE. The free magnetic pattern 140 can include a first free magnetic pattern 142 and a second free magnetic pattern 144 formed by etching a first free magnetic layer 142L and a second free magnetic layer 144L. The cap pattern 160 can include a first cap pattern 162 and a second cap pattern 164 formed by etching a first cap layer 162L and a second cap layer 164L.

[0086] For example, the etching process of etching the magnetic tunnel junction layer MTJL and the lower electrode layer BEL can be an ion beam etching process using an ion beam. The ion beam can include inert ions. By the ion beam etching process, an upper surface of the first interlayer insulating layer 110 can be recessed on both sides of the magnetic tunnel junction pattern MTJ. Accordingly, the first interlayer insulating layer 110 can have an upper surface 110RU that is recessed on both sides (e.g., opposite sides) of the magnetic tunnel junction pattern MTJ.

[0087] After the ion beam etching process, a portion of each conductive mask pattern 175 can remain on the magnetic tunnel junction pattern MTJ. The portion of each conductive mask pattern 175 can serve as an upper electrode TE. That is, each conductive mask pattern 175 can be formed as an upper electrode TE. The upper electrode TE, the magnetic tunnel junction pattern MTJ, and the lower electrode BE can constitute each data storage pattern DS.

[0088] Referring toFigure 12 A protective insulating layer 170 can be formed on the first interlayer insulating layer 110 to cover the data storage pattern DS. The protective insulating layer 170 can be formed to cover the upper surface and the side surface of each data storage pattern DS with a substantially uniform thickness. The protective insulating layer 170 can extend along the recessed upper surface 110RU of the first interlayer insulating layer 110. A second interlayer insulating layer 180 can be formed on the protective insulating layer 170, and can cover the data storage pattern DS.

[0089] Referring again to Figure 7 A portion of the second interlayer insulating layer 180 and the protective insulating layer 170 can be removed, and an upper surface of the upper electrode TE of each data storage pattern DS can be exposed. An upper wiring 200 can be formed on the second interlayer insulating layer 180, and can cover the exposed upper surface of the upper electrode TE. The upper wiring 200 can be electrically connected to the upper electrode TE.

[0090] According to embodiments of the inventive concept, the magnetic tunnel junction pattern MTJ can include the metal oxide pattern 150 and the capping pattern 160 sequentially stacked on one side of the free magnetic pattern 140. The capping pattern 160 can include a first capping pattern 162, and a second capping pattern 164 disposed on the first capping pattern 162. Further, the first capping pattern 162 can include a first non-magnetic metal, and the second capping pattern 164 can include a second non-magnetic metal different from the first non-magnetic metal. The first capping pattern 162 can function as a barrier layer that suppresses diffusion of oxygen in the metal oxide pattern 150. As a result, diffusion of oxygen in the metal oxide pattern 150 into the second capping pattern 164 can be prevented or reduced. Further, since the first non-magnetic metal of the first capping pattern 162 has a relatively low coefficient of thermal expansion, the effect of thermal expansion of the first capping pattern 162 can be less. Since the second non-magnetic metal of the second capping pattern 164 has a relatively high boiling point, the perpendicular magnetic anisotropy can be easily maintained due to the second capping pattern 164 even at a relatively high temperature. As a result, degradation of the switching characteristics of the magnetic tunnel junction pattern MTJ can be prevented, and the durability of the magnetic tunnel junction pattern MTJ at high temperatures can be improved. Accordingly, the heat resistance of the magnetic tunnel junction pattern MTJ can be improved.

[0091] A magnetic memory device according to an embodiment of the inventive concept can include a first capping pattern adjacent to a metal oxide pattern, and a second capping pattern disposed on the first capping pattern. The first capping pattern can function as a barrier layer that suppresses diffusion of oxygen in the metal oxide pattern. As a result, diffusion of oxygen in the metal oxide pattern into the second capping pattern can be prevented or reduced. Further, since a first non-magnetic metal of the first capping pattern has a relatively low coefficient of thermal expansion, the effect of thermal expansion of the first capping pattern can be less. Since a second non-magnetic metal of the second capping pattern has a relatively high boiling point, perpendicular magnetic anisotropy can be easily maintained due to the second capping pattern even at high temperatures. As a result, degradation of switching characteristics of a magnetic tunnel junction pattern can be prevented, and durability of the magnetic tunnel junction pattern at high temperatures can be improved. Accordingly, heat resistance of the magnetic tunnel junction pattern can be improved.

[0092] Although the inventive concept has been described with reference to embodiments thereof, it is to be understood that various changes can be made and equivalents can be substituted for elements thereof without departing from the spirit and scope of the inventive concept.

Claims

1. A magnetic memory device, comprising: a fixed magnetic pattern and a free magnetic pattern stacked on a substrate; a tunnel barrier pattern between the fixed magnetic pattern and the free magnetic pattern; a capping pattern on the free magnetic pattern; and a metal oxide pattern between the free magnetic pattern and the capping pattern, wherein the capping pattern comprises a first capping pattern and a second capping pattern on the first capping pattern, wherein the first capping pattern comprises a first non-magnetic metal, wherein the second capping pattern comprises a second non-magnetic metal, and wherein the first capping pattern comprises an oxide of the first non-magnetic metal, the oxide of the first non-magnetic metal being adjacent to an interface between the metal oxide pattern and the first capping pattern. A thickness of the first capping pattern is less than a thickness of the second capping pattern.

2. The magnetic memory device of claim 1, wherein, The first non-magnetic metal is molybdenum (Mo), and the second non-magnetic metal is rhenium (Re).

3. The magnetic memory device according to claim 1, wherein The oxide of the first non-magnetic metal forms at a lower energy than the oxide of the second non-magnetic metal.

4. The magnetic memory device of claim 1, wherein, The first capping pattern further comprises one of tantalum (Ta), tungsten (W), iridium (Ir), ruthenium (Ru), or hafnium (Hf).

5. The magnetic memory device of claim 1, wherein, The metal oxide pattern comprises one of magnesium (Mg), tungsten (W), tantalum (Ta), titanium (Ti), or hafnium (Hf).

6. The magnetic memory device of claim 1, wherein, Each of the fixed magnetic pattern and the free magnetic pattern has a magnetization direction perpendicular to an interface between the free magnetic pattern and the tunnel barrier pattern.

7. The magnetic memory device of claim 1, wherein, A boiling point of the second non-magnetic metal is higher than a boiling point of the first non-magnetic metal.

8. The magnetic memory device of claim 1, wherein, 9. The magnetic memory device of claim 1, further comprising: a lower electrode between the substrate and the fixed magnetic pattern; and an upper electrode on the capping pattern, and wherein the fixed magnetic pattern is disposed between the substrate and the tunnel barrier pattern.

10. The magnetic memory device of claim 1, further comprising: a lower electrode between the substrate and the fixed magnetic pattern; and an upper electrode on the capping pattern, wherein the free magnetic pattern is disposed between the substrate and the tunnel barrier pattern, and wherein the capping pattern is disposed between the substrate and the free magnetic pattern.

11. A magnetic memory device, comprising: a fixed magnetic pattern and a free magnetic pattern stacked on a substrate; a tunnel barrier pattern between the fixed magnetic pattern and the free magnetic pattern; a first capping pattern and a second capping pattern stacked on the free magnetic pattern; and a metal oxide pattern between the free magnetic pattern and the first capping pattern, wherein the first capping pattern comprises molybdenum (Mo), and wherein the second capping pattern comprises rhenium (Re). The first capping pattern and the metal oxide pattern are in contact with each other to form an interface therebetween, and wherein the first capping pattern further comprises a molybdenum oxide, the molybdenum oxide being adjacent to the interface between the first capping pattern and the metal oxide pattern. The first capping pattern has a thickness of 2 Å to 20 Å, and wherein the second capping pattern has a thickness of 5 Å to 30 Å.

12. The magnetic memory device of claim 11, wherein, ​ ​ 13. The magnetic memory device of claim 11, wherein, ​ ​ 14. The magnetic memory device of claim 11, wherein, The first capping pattern further includes one of tantalum (Ta), tungsten (W), iridium (Ir), ruthenium (Ru), or hafnium (Hf).

15. The magnetic memory device of claim 11, wherein, The free magnetic pattern includes: a first free magnetic pattern adjacent to the tunnel barrier pattern; and a second free magnetic pattern adjacent to the metal oxide pattern and in contact with the first free magnetic pattern.

16. The magnetic memory device of claim 11, wherein, The first capping pattern is disposed between the metal oxide pattern and the second capping pattern, and wherein the first capping pattern is in contact with the metal oxide pattern and the second capping pattern.

17. A magnetic memory device, comprising: a lower electrode on a substrate; a fixed magnetic pattern and a free magnetic pattern stacked on the lower electrode; a tunnel barrier pattern between the fixed magnetic pattern and the free magnetic pattern; a capping pattern on the tunnel barrier pattern; a metal oxide pattern between the capping pattern and the tunnel barrier pattern; and an upper electrode on the capping pattern, wherein the capping pattern includes: a first capping pattern including a first non-magnetic metal; and a second capping pattern including a second non-magnetic metal and on the first capping pattern, wherein an oxide of the first non-magnetic metal forms at an energy lower than an oxide of the second non-magnetic metal, and wherein a thickness of the first capping pattern is less than a thickness of the second capping pattern. The first non-magnetic metal includes molybdenum (Mo), and 18. The magnetic memory device of claim 17, wherein, wherein the second non-magnetic metal includes rhenium (Re). The first capping pattern includes an oxide of the first non-magnetic metal adjacent to an interface between the first capping pattern and the metal oxide pattern.

19. The magnetic memory device of claim 17, wherein, The second non-magnetic metal has a boiling point higher than a boiling point of the first non-magnetic metal.

20. The magnetic memory device of claim 17, wherein, ​

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