Perovskite battery and preparation method thereof

Abstract

The invention provides a perovskite cell and a preparation method thereof, and the preparation method comprises the steps: (1) carrying out the first passivation of the surface of a hole transport layer through employing a first gas, and obtaining a passivated hole transport layer; (2) preparing a perovskite layer on the passivated surface of the passivated hole transport layer obtained in the step (1); and (3) carrying out second passivation on the perovskite layer obtained in the step (2) by adopting second gas. According to the preparation method disclosed by the invention, the hole transport layer and the perovskite layer are respectively passivated by adopting a vapor phase method, so that the stability of the perovskite cell is improved, and the preparation efficiency of the preparation method is further improved; according to the preparation method provided by the invention, a dry process is adopted, so that the preparation efficiency of the preparation method is further higher, and the yield of the perovskite cell is improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of perovskite batteries, and relates to a preparation method of a perovskite battery, in particular to a perovskite battery and a preparation method thereof. BACKGROUND

[0002] With the development of perovskite solar cells, perovskite solar cells are increasingly recognized by the public. The efficiency and stability of perovskite solar cells have gradually achieved exciting breakthroughs, and it is extremely likely to become the next generation of photovoltaics to replace crystalline silicon. During the development of perovskite solar cells, the efficiency of perovskite solar cells has been rapidly improved. The efficiency of small cells prepared in the laboratory exceeds 26%, and the efficiency of small modules reaches 23%. In addition to efficiency, the stability of perovskite solar cells has also made certain breakthroughs.

[0003] Most of the existing preparation lines of perovskite solar cells are based on the process of preparing perovskite by solution method, such as slot coating, blade coating and 3D printing, etc. The solution method for preparing perovskite thin film has many shortcomings, such as many defects, poor repeatability, poor film formation, and the existing perovskite passivation process needs to be further improved. At the same time, the current passivation process basically adopts the solution method, which also needs annealing equipment, which increases the complexity of the production line. Multiple annealing equipment greatly affects the tact time of the production line. In addition, after the complete crystallization of perovskite, the subsequent annealing process will cause irreversible damage to it, which seriously affects its stability.

[0004] CN116390503A discloses a preparation method and application of a double-heterojunction passivated perovskite cell interface, and relates to the technical field of perovskite cells. The preparation method of the perovskite cell interface is to use metal ion doping to modify the TiO2 thin film transport layer, prepare a SnO2 thin film on the basis of the thin film, spin-coat a layer of oxygen-containing acid anion on the surface of the SnO2 thin film to form a TiO2 / SnO2 / oxygen-containing acid anion double-heterojunction electron transport layer; or directly add the oxygen-containing acid anion to the SnO2 solution to form a TiO2 / SnO2@oxygen-containing acid anion double-heterojunction electron transport layer.

[0005] CN117596903A discloses a perovskite solar cell and a preparation method thereof, and belongs to the technical field of photovoltaic solar materials. The preparation method comprises: stacking an electrically conductive glass substrate, an electron transport layer, a perovskite layer, a hole transport layer and a metal electrode in sequence to prepare the perovskite solar cell; a phosphoric acid ester surfactant containing a P=O functional group is arranged between the electron transport layer and the perovskite layer for buried interface modification. SUMMARY

[0006] In view of the deficiencies of the prior art, the purpose of the present application is to provide a perovskite battery and a preparation method thereof, wherein the preparation method adopts a gas phase method to passivate the hole transport layer and the perovskite layer, thereby improving the stability of the perovskite battery and further improving the preparation efficiency of the preparation method; the preparation method provided by the present application adopts a dry process, so the preparation efficiency of the preparation method is further improved, thereby improving the yield of the perovskite battery.

[0007] To achieve this purpose, the present application adopts the following technical solutions:

[0008] In a first aspect, the present application provides a preparation method of a perovskite battery, which comprises:

[0009] (1) performing first passivation on the surface of the hole transport layer by using a first gas to obtain a passivated hole transport layer;

[0010] (2) preparing a perovskite layer on the passivated surface of the passivated hole transport layer obtained in step (1);

[0011] (3) performing second passivation on the perovskite layer obtained in step (2) by using a second gas.

[0012] In the preparation method of the perovskite battery provided by the present application, the hole transport layer is passivated by using a gas phase method, which reduces the redox reaction between the hole transport layer and the perovskite interface, the perovskite layer is passivated by using a gas phase method, which prevents the further deterioration of the Pb 2+ defects in the perovskite layer, thereby improving the stability of the perovskite battery and further improving the passivation efficiency, so as to improve the preparation efficiency of the preparation method; in addition, the preparation method adopts a dry process, which maximizes the continuity of the preparation process, so the preparation efficiency of the preparation method is higher, thereby further improving the yield of the perovskite battery.

[0013] Thirdly, the preparation method only performs a heat treatment once, which improves the preparation efficiency and avoids damage to the perovskite battery caused by multiple heat treatments, thereby improving the stability of the perovskite battery.

[0014] Preferably, the preparation method further comprises, before step (1): preparing a hole transport layer on the surface of a substrate;

[0015] The substrate in the present application includes an FTO substrate, and the thickness of the substrate is not limited, for example, it can be 500 nm.

[0016] Preferably, the hole transport layer in step (1) comprises a NiO x layer.

[0017] Preferably, the thickness of the hole transport layer in step (1) is 15-25 nm, for example, it can be 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm or 25 nm, but is not limited to the listed values, and other values not listed in the range are also applicable, and the hole transport layer is prepared by magnetron sputtering.

[0018] Preferably, the first gas in step (1) comprises SO.

[0019] Preferably, the first passivation in step (1) comprises: placing the hole transport layer in an SO atmosphere to perform a first passivation reaction.

[0020] Preferably, the first passivation reaction is performed at a temperature of 80-120°C for 30-90 s.

[0021] In the present application, the first passivation reaction is performed at a temperature of 80-120°C, for example, it can be 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 115°C or 120°C, but is not limited to the listed values, and other values not listed in the range are also applicable.

[0022] In the present application, the first passivation reaction is performed for 30-90 s, for example, it can be 30 s, 35 s, 40 s, 45 s, 50 s, 55 s, 60 s, 65 s, 70 s, 75 s, 80 s, 85 s or 90 s, but is not limited to the listed values, and other values not listed in the range are also applicable.

[0023] Preferably, the method for preparing the perovskite layer in step (2) comprises a two-step vacuum method.

[0024] The two-step vacuum method comprises: first preparing a PbI2 layer, and then using the PbI2 layer to prepare a CsFAPbI3 layer; or first preparing a composite layer of CsI and PbI2, and then using the composite layer to prepare a CsFAPbI3 layer.

[0025] Preferably, the thickness of the PbI2 layer is 300-400 nm, for example, it can be 300 nm, 310 nm, 320 nm, 330 nm, 340 nm, 350 nm, 360 nm, 370 nm, 380 nm, 390 nm or 400 nm, but is not limited to the listed values, and other values not listed in the range are also applicable.

[0026] Preferably, the mass ratio of CsI to PbI2 in the composite layer of CsI and PbI2 is (3-15):100, for example, it can be 3:100, 4:100, 5:100, 6:100, 7:100, 8:100, 9:100, 10:100, 11:100, 12:100, 13:100, 14:100 or 15:100, but not limited to the listed values, other values not listed in the range are also applicable.

[0027] Preferably, the thickness of the CsFAPbI3 layer is 300-700 nm, for example, it can be 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm or 700 nm, but not limited to the listed values, other values not listed in the range are also applicable.

[0028] Preferably, the second gas in step (3) comprises CS2.

[0029] Preferably, the second passivation in step (3) comprises: placing the perovskite layer obtained in step (2) in a CS2 atmosphere to perform a second passivation reaction.

[0030] Preferably, the temperature of the second passivation reaction is 80-100℃, and the time is 2-10 min.

[0031] In the present application, the temperature of the second passivation reaction is 80-100℃, for example, it can be 80℃, 82℃, 84℃, 86℃, 88℃, 90℃, 92℃, 94℃, 96℃, 98℃ or 100℃, but not limited to the listed values, other values not listed in the range are also applicable.

[0032] In the present application, the time of the second passivation reaction is 2-10 min, for example, it can be 2 min, 3 min, 4 min, 5 min, 6 min, 7 min, 8 min, 9 min or 10 min, but not limited to the listed values, other values not listed in the range are also applicable.

[0033] Preferably, the preparation method further comprises, after step (3): preparing an electron transport layer on the surface of the passivated perovskite layer obtained in step (3).

[0034] Preferably, the electron transport layer comprises C 60 a layer and / or a SnO2 layer with a thickness of 20-40 nm, and the method for preparing the electron transport layer comprises any one or a combination of at least two of ALD, electron beam or RPD.

[0035] The thickness of the electron transport layer in the present application is 20-40 nm, for example, it can be 20 nm, 22 nm, 24 nm, 26 nm, 28 nm, 30 nm, 32 nm, 34 nm, 36 nm, 38 nm or 40 nm, but it is not limited to the listed values, and other values not listed in this range are also applicable.

[0036] The method for preparing the electron transport layer in the present application includes any one of atomic layer deposition (ALD), electron beam deposition or reactive plasma deposition (RPD), or a combination of at least two of them, typically but not limitedly including a combination of ALD and electron beam, a combination of electron beam and RPD, or a combination of ALD, electron beam and RPD.

[0037] Preferably, the preparation method further includes coating a carbon paste on the surface of the electron transport layer.

[0038] Preferably, the coating method includes screen printing.

[0039] Preferably, the preparation method further includes: after preparing the electron transport layer or coating the carbon paste, heat treating the resulting structure.

[0040] The preparation method of the perovskite battery provided in the present application only performs heat treatment once, which improves the preparation efficiency and also improves the stability of the perovskite battery.

[0041] Preferably, the temperature of the heat treatment is 100-150℃, and the time is 10-60 min.

[0042] The temperature of the heat treatment in the present application is 100-150℃, for example, it can be 100℃, 105℃, 110℃, 115℃, 120℃, 125℃, 130℃, 135℃, 140℃, 145℃ or 150℃, but it is not limited to the listed values, and other values not listed in this range are also applicable.

[0043] The time of the heat treatment in the present application is 10-60 min, for example, it can be 10 min, 15 min, 20 min, 25 min, 30 min, 35 min, 40 min, 45 min, 50 min, 55 min or 60 min, but it is not limited to the listed values, and other values not listed in this range are also applicable.

[0044] As a preferred technical solution of the preparation method in the present application, the preparation method includes:

[0045] (1) NiO with a thickness of 15-25 nm obtained by magnetron sputtering xThe layer is placed in SO atmosphere and passivation reaction is carried out at 80-120 ° C for 30-90s to obtain passivated NiO x layer;

[0046] (2) The passivated NiO obtained in step (1) x A PbI2 layer is first prepared on the passivation surface of the layer, and then the CsFAPbI3 layer is prepared using the PbI2 layer;

[0047] Or the passivated NiO obtained in step (1) x A composite layer having a mass ratio of CsI to PbI2 of (3-15):100 is first prepared on the passivated surface of the layer, and then a CsFAPbI3 layer is prepared using the composite layer;

[0048] (3) placing the CsFAPbI3 layer obtained in step (2) in a CS2 atmosphere and performing a passivation reaction at 80-100°C for 2-10 minutes to obtain a passivated CsFAPbI3 layer;

[0049] (4) preparing an electron transport layer with a thickness of 20 to 40 nm on the surface of the passivated CsFAPbI3 layer obtained in step (3), wherein the electron transport layer comprises C 60 layer and / or SnO2 layer, and then coating the surface of the electron transport layer with carbon paste by screen printing;

[0050] After preparing the electron transport layer or coating the carbon paste, the obtained structure is subjected to a heat treatment at 100-150° C. for 10-60 minutes to obtain a perovskite cell.

[0051] In a second aspect, the present invention provides a perovskite battery, which is obtained by the preparation method described in the first aspect.

[0052] Compared with the prior art, the present invention has the following beneficial effects:

[0053] The preparation method of the perovskite battery provided by the present invention adopts a gas phase method to passivate the hole transport layer, thereby reducing the redox reaction between the hole transport layer and the perovskite interface, and adopts a gas phase method to passivate the perovskite layer, thereby preventing the Pb in the perovskite layer from 2+ The further deterioration of defects not only improves the stability of the perovskite battery, but also improves the passivation efficiency, thereby improving the preparation efficiency of the preparation method; in addition, the preparation method adopts a dry process to maximize the continuity of the preparation process, so the preparation efficiency of the preparation method is relatively high, thereby further improving the output of the perovskite battery. DETAILED DESCRIPTION

[0054] The technical solution of the present invention is further described below by way of specific embodiments. It should be understood by those skilled in the art that the embodiments are merely to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0055] Example 1

[0056] This embodiment provides a method for preparing a perovskite battery, the method comprising:

[0057] (1) NiO with a thickness of 20 nm was prepared on the surface of a 500 nm thick FTO substrate by magnetron sputtering. x layer, the obtained NiO x The layer was placed in SO atmosphere and passivated at 100 ° C for 60 s to obtain passivated NiO x layer;

[0058] (2) The passivated NiO obtained in step (1) x A composite layer with a mass ratio of CsI to PbI2 of 10:300 was first prepared on the passivation surface of the layer, and then formamidine hydroiodide (FAI) was coated on the surface of the composite layer. After annealing, a CsFAPbI3 layer with a thickness of 500 nm was prepared;

[0059] (3) placing the CsFAPbI3 layer obtained in step (2) in a CS2 atmosphere and performing a passivation reaction at 90°C for 6 minutes to obtain a passivated CsFAPbI3 layer;

[0060] (4) preparing an electron transport layer with a thickness of 30 nm on the surface of the passivated CsFAPbI3 layer obtained in step (3), wherein the electron transport layer is C 60 layer, and then coating the surface of the electron transport layer with carbon paste by screen printing;

[0061] After coating the carbon paste, the resulting structure was heat-treated at 120° C. for 35 min to obtain a perovskite cell.

[0062] Example 2

[0063] This embodiment provides a method for preparing a perovskite battery, the method comprising:

[0064] (1) NiO with a thickness of 25 nm was prepared on the surface of a 500 nm thick FTO substrate by magnetron sputtering. x layer, the obtained NiO x The layer was placed in SO atmosphere and passivated at 120 ° C for 30 s to obtain passivated NiO x layer;

[0065] (2) The passivated NiO obtained in step (1) xA 300 nm thick PbI2 layer was first prepared on the passivation surface of the layer, and then formamidine hydroiodide (FAI) was coated on the surface of the PbI2 layer. After annealing, a 300 nm thick CsFAPbI3 layer was prepared;

[0066] (3) placing the CsFAPbI3 layer obtained in step (2) in a CS2 atmosphere and performing a passivation reaction at 80°C for 10 minutes to obtain a passivated CsFAPbI3 layer;

[0067] (4) preparing an electron transport layer with a thickness of 20 nm on the surface of the passivated CsFAPbI3 layer obtained in step (3), wherein the electron transport layer is C 60 layer, after preparing the electron transport layer, the obtained structure is heat-treated at 150° C. for 10 minutes to obtain a perovskite cell, and then carbon paste is coated on the surface of the electron transport layer by screen printing.

[0068] Example 3

[0069] This embodiment provides a method for preparing a perovskite battery, the method comprising:

[0070] (1) NiO with a thickness of 15 nm was prepared on the surface of a 500 nm thick FTO substrate by magnetron sputtering. x layer, the obtained NiO x The layer was placed in SO atmosphere and passivated at 80℃ for 90s to obtain passivated NiO x layer;

[0071] (2) The passivated NiO obtained in step (1) x A composite layer with a mass ratio of CsI to PbI2 of 15:100 was first prepared on the passivation surface of the layer, and then formamidine hydroiodide (FAI) was coated on the surface of the composite layer. After annealing, a CsFAPbI3 layer with a thickness of 700 nm was prepared;

[0072] (3) placing the CsFAPbI3 layer obtained in step (2) in a CS2 atmosphere and performing a passivation reaction at 100°C for 2 minutes to obtain a passivated CsFAPbI3 layer;

[0073] (4) preparing an electron transport layer with a thickness of 40 nm on the surface of the passivated CsFAPbI3 layer obtained in step (3), wherein the electron transport layer is a SnO2 layer, and then coating the surface of the electron transport layer with carbon paste by screen printing;

[0074] After coating the carbon paste, the resulting structure was heat-treated at 100° C. for 60 min to obtain a perovskite cell.

[0075] Example 4

[0076] The embodiment provides a preparation method of a perovskite battery. x The temperature for placing the layer in the SO atmosphere to perform the passivation reaction is 80 DEG C, and the rest is the same as in example 1.

[0077] Example 5

[0078] The embodiment provides a preparation method of a perovskite battery. x The temperature for placing the layer in the SO atmosphere to perform the passivation reaction is 120 DEG C, and the rest is the same as in example 1.

[0079] Example 6

[0080] The embodiment provides a preparation method of a perovskite battery. S The mass ratio of CI to PbI2 in the composite layer is 1:10, and the rest is the same as in example 1. S The mass ratio of CI to PbI2 in the composite layer is 1:10, and the rest is the same as in example 1.

[0081] Example 7

[0082] The embodiment provides a preparation method of a perovskite battery. S The mass ratio of CI to PbI2 in the composite layer is 1:10, and the rest is the same as in example 1. S The mass ratio of CI to PbI2 in the composite layer is 1:10, and the rest is the same as in example 1.

[0083] Example 8

[0084] The embodiment provides a preparation method of a perovskite battery.

[0085] Example 9

[0086] The embodiment provides a preparation method of a perovskite battery.

[0087] Example 10

[0088] The embodiment provides a preparation method of a perovskite battery.

[0089] Example 11

[0090] The embodiment provides a preparation method of a perovskite battery.

[0091] Example 12

[0092] The embodiment provides a preparation method of a perovskite battery, which is identical to that in Embodiment 1 except that the SO atmosphere is replaced by a CO atmosphere.

[0093] Embodiment 13

[0094] The embodiment provides a preparation method of a perovskite battery, which is identical to that in Embodiment 1 except that the CsFAPbI3 layer prepared by the two-step vacuum method is replaced by a CsFAPbI3 layer of the same thickness prepared by a one-step vacuum method.

[0095] Embodiment 14

[0096] The embodiment provides a preparation method of a perovskite battery, which is identical to that in Embodiment 1 except that the CS2 atmosphere is replaced by ammonia.

[0097] Embodiment 15

[0098] The embodiment provides a preparation method of a perovskite battery, which is identical to that in Embodiment 1 except that, in step (1), the NiO x layer is placed in an SO atmosphere to perform a passivation reaction at a temperature of 60 DEG C.

[0099] Embodiment 16

[0100] The embodiment provides a preparation method of a perovskite battery, which is identical to that in Embodiment 1 except that, in step (1), the NiO x layer is placed in an SO atmosphere to perform a passivation reaction at a temperature of 150 DEG C.

[0101] Embodiment 17

[0102] The embodiment provides a preparation method of a perovskite battery, which is identical to that in Embodiment 1 except that, in step (2), the mass ratio of CsI to PbI2 in the composite layer of CsI and PbI2 is 3:700.

[0103] Embodiment 18

[0104] The embodiment provides a preparation method of a perovskite battery, which is identical to that in Embodiment 1 except that, in step (2), the mass ratio of CsI to PbI2 in the composite layer of CsI and PbI2 is 15:80.

[0105] Embodiment 19

[0106] The embodiment provides a preparation method of a perovskite battery, which is identical to that in Embodiment 1 except that, in step (3), the passivation reaction is performed at a temperature of 60 DEG C.

[0107] Embodiment 20

[0108] The embodiment provides a preparation method of a perovskite battery, which is the same as that in Embodiment 1, except that the temperature of the passivation reaction in step (3) is 120 DEG C.

[0109] Embodiment 21

[0110] The embodiment provides a preparation method of a perovskite battery, which is the same as that in Embodiment 1, except that the temperature of the heat treatment in step (4) is 80 DEG C.

[0111] Embodiment 22

[0112] The embodiment provides a preparation method of a perovskite battery, which is the same as that in Embodiment 1, except that the temperature of the heat treatment in step (4) is 180 DEG C.

[0113] Comparative Example 1

[0114] The comparative example provides a preparation method of a perovskite battery, which is the same as that in Embodiment 1, except that the "placing the obtained NiOx layer in an SO atmosphere, and performing a passivation reaction at 100 DEG C for 60 s to obtain a passivated NiOx layer" is replaced by adopting a liquid phase method for passivation, and the liquid phase method is that: adopting hydrogen peroxide for passivation.

[0115] Comparative Example 2

[0116] The comparative example provides a preparation method of a perovskite battery, which is the same as that in Embodiment 1, except that the "placing the CsFAPbI3 layer obtained in step (2) in a CS2 atmosphere, and performing a passivation reaction at 90 DEG C for 6 min to obtain a passivated CsFAPbI3 layer" is replaced by adopting a liquid phase method for passivation, and the liquid phase method is that: adopting trimethylolpropane triacrylate for cross-linking passivation.

[0117] The perovskite batteries prepared by the preparation methods provided in Embodiments 1 to 22 and Comparative Examples 1 and 2 are tested.

[0118] The test includes photoelectric conversion efficiency test, open circuit voltage test, short circuit current test and fill factor test, and the above tests are carried out under AM1.5G light condition, the test time interval is 100 ms, and the photoelectric conversion efficiency (PCE), open circuit voltage (Voc), short circuit current (Isc) and fill factor (FF) of the perovskite battery obtained by the test are shown in Table 1.

[0119] The test includes lamination test, and the lamination test is that: the perovskite battery is laminated at 85 DEG C under a pressure of 1x10 3 Pa for 10 h, and the performance retention rate of the perovskite battery after lamination for 10 h is shown in Table 2, and the performance retention rate is the ratio of the performance of the perovskite battery after lamination for 10 h to the performance before lamination.

[0120] The test includes a stability test, which is a test under the light condition of AM1.5G, a temperature of 60°C, and 10 RH%, and the aging time when the battery is discolored is shown in Table 2.

[0121] Table 1

[0122]

[0123]

[0124] Table 2

[0125]

[0126]

[0127] From Table 1 and Table 2, it can be obtained that:

[0128] (1) The perovskite battery prepared in Examples 1-11 has high photoelectric conversion efficiency, high open circuit voltage, large short circuit current and high fill factor, and shows high performance retention rate in the lamination test and high stability in the stability test.

[0129] (2) It can be known from the comparison between Example 1 and Example 12 that when the SO atmosphere used for passivation of the perovskite layer is replaced by other reducing atmospheres, the photoelectric conversion efficiency of the perovskite battery becomes small, the open circuit voltage becomes small, the short circuit current remains unchanged, the fill factor becomes small, the performance retention rate becomes small, and the aging time becomes short, which is because SO plays a passivation role in addition to the reduction role of S in SO. x

[0130] (3) It can be known from the comparison between Example 1 and Example 13 that when the two-step vacuum method for preparing the perovskite layer is replaced by the one-step vacuum method for preparing the perovskite layer, the photoelectric conversion efficiency of the perovskite battery becomes poor, the open circuit voltage becomes low, the short circuit current becomes small, the fill factor becomes small, the performance retention rate becomes poor, and the aging time becomes short, which is because the two-step vacuum method for preparing the perovskite layer maximizes the quality of the perovskite thin film.

[0131] (4) It can be known from the comparison between Example 1 and Example 10 that when the CS2 atmosphere used for passivation of the perovskite layer is replaced by ammonia, the photoelectric conversion efficiency of the perovskite battery becomes low, the open circuit voltage becomes low, the short circuit current becomes low, the fill factor becomes small, the performance retention rate becomes poor, and the aging time becomes short, which is because S in CS2 plays a passivation effect.

[0132] (5) It can be known from the comparison between Example 1 and Examples 15 and 16 that the NiO x ​The temperature of the passivation reaction in the SO atmosphere during the passivation of the layer affects the performance of the perovskite battery; when the temperature of the passivation reaction is too low, the photoelectric conversion efficiency of the perovskite battery becomes low, the open circuit voltage becomes small, the short circuit current becomes low, the fill factor becomes low, the performance retention rate becomes low, and the aging time becomes short, which is due to the fact that the passivation reaction is not sufficient due to the too low temperature; when the temperature of the passivation reaction is too high, the photoelectric conversion efficiency of the perovskite battery becomes low, the open circuit voltage becomes low, the short circuit current becomes low, the fill factor becomes low, the performance retention rate becomes poor, and the aging time becomes short, which is due to the fact that the too high temperature is not friendly to the performance of the NiO x layer.

[0133] (6) It can be known from the comparison of Examples 1 and 17 and 18 that, in the two-step vacuum method for preparing the CsFAPbI3 layer in the application, the mass ratio of CsI to PbI2 in the composite layer of CsI and PbI2 prepared first will affect the performance of the perovskite battery; when the mass ratio of CsI to PbI2 in the composite layer of CsI and PbI2 is too low, the photoelectric conversion efficiency of the perovskite battery becomes low, the open circuit voltage becomes low, the short circuit current becomes high, the fill factor becomes small, the performance retention rate becomes poor, and the aging time becomes short, which is due to the fact that the content of Cs is reduced and the perovskite band gap is narrowed; when the mass ratio of CsI to PbI2 in the composite layer of CsI and PbI2 is too high, the photoelectric conversion efficiency of the perovskite battery becomes low, the open circuit voltage becomes large, the short circuit current becomes small, the fill factor becomes small, the performance retention rate becomes small, and the aging time becomes short, which is due to the fact that the perovskite band gap is widened.

[0134] (7) It can be known from the comparison of Examples 1 and 19 and 20 that, in the application, the temperature of the passivation reaction during the passivation of the perovskite layer will affect the performance of the perovskite battery; when the temperature of the passivation reaction is too low, the photoelectric conversion efficiency of the perovskite battery becomes small, the open circuit voltage becomes small, the short circuit current becomes low, the fill factor becomes low, the performance retention rate becomes poor, and the aging time becomes short, which is due to the fact that the passivation reaction is not sufficient; when the temperature of the passivation reaction is too high, the photoelectric conversion efficiency of the perovskite battery becomes poor, the open circuit voltage becomes low, the short circuit current becomes low, the fill factor becomes low, the performance retention rate becomes poor, and the aging time becomes short, which is due to the fact that the too high temperature of the passivation reaction will affect the crystallization of the perovskite.

[0135] (8) Through the comparison of Examples 1 and 21 and 22, it can be known that the temperature of the last step of heat treatment in the application will affect the performance of the perovskite battery; when the temperature of heat treatment is too low, it will cause the photoelectric conversion efficiency of the perovskite battery to be poor, the open circuit voltage to be low, the short circuit current to be low, the fill factor to be low, the performance retention rate to be poor and the aging time to be short, which is due to the fact that the temperature of heat treatment is too low, thereby causing incomplete crystallization. When the temperature of heat treatment is too high, it will cause the photoelectric conversion efficiency of the perovskite battery to be poor, the open circuit voltage to be low, the short circuit current to be poor, the fill factor to be low, the performance retention rate to be poor and the aging time to be short, which is due to the fact that the temperature of heat treatment is too high, thereby causing the crystallization to be destroyed.

[0136] (9) Through the comparison of Examples 1 and Comparative Examples 1 and 2, it can be known that the preparation method of the perovskite battery provided by the application all adopts dry process, which maximizes the continuity of the preparation process, so that the preparation efficiency of the preparation method is higher, thereby improving the yield of the perovskite battery; in addition, the preparation method adopts gas phase method to passivate the hole transport layer, reduces the redox reaction between the hole transport layer and the perovskite interface, adopts gas phase method to passivate the perovskite layer, and prevents the Pb 2+ further deterioration of defects, while improving the stability of the perovskite battery, the passivation efficiency is also improved, thereby further improving the preparation efficiency of the preparation method; again, the preparation method only performs heat treatment once, which improves the preparation efficiency, and also avoids damage to the perovskite battery caused by multiple heat treatments, thereby improving the stability of the perovskite battery.

[0137] The above only describes specific embodiments of the application, but the protection scope of the application is not limited thereto. It should be understood by those skilled in the art that any changes or replacements within the technical scope disclosed by the application can be easily thought of by those skilled in the art, and all fall within the protection scope and disclosure scope of the application.

Claims

1. A method for preparing a perovskite battery, characterized in that: The preparation method comprises: (1) performing first passivation on the surface of the hole transport layer by using a first gas to obtain a passivated hole transport layer; (2) preparing a perovskite layer on the passivated surface of the passivated hole transport layer obtained in step (1); (3) performing second passivation on the perovskite layer obtained in step (2) by using a second gas.

2. The production method according to claim 1, characterized by, The hole transport layer of step (1) comprises NiO x layer; Preferably, the thickness of the hole transport layer in step (1) is 15-25 nm, and the hole transport layer is prepared by magnetron sputtering.

3. The preparation method according to claim 1, characterized in that The first gas in step (1) comprises SO; Preferably, the first passivation in step (1) comprises: placing the hole transport layer in an SO atmosphere to perform a first passivation reaction. Preferably, the first passivation reaction is performed at a temperature of 80-120°C for 30-90 s.

4. The method of any one of claims 1, wherein, The method for preparing the perovskite layer in step (2) comprises a two-step vacuum method; The two-step vacuum method comprises: first preparing a PbI2 layer, and then using the PbI2 layer to prepare a CsFAPbI3 layer; or first preparing a composite layer of CsI and PbI2, and then using the composite layer to prepare a CsFAPbI3 layer; Preferably, the mass ratio of CsI to PbI2 in the composite layer of CsI and PbI2 is (3-15):

100.

5. The preparation method according to claim 1, characterized in that The second gas in step (3) comprises CS2; Preferably, the second passivation in step (3) comprises: placing the perovskite layer obtained in step (2) in a CS2 atmosphere to perform a second passivation reaction. Preferably, the second passivation reaction is performed at a temperature of 80-100°C for 2-10 min.

6. The method of making according to any one of claims 1, wherein, The preparation method further comprises, after step (3): preparing an electron transport layer on the surface of the passivated perovskite layer obtained in step (3); Preferably, the electron transport layer comprises C 60 a layer of Sn02, having a thickness of 20-40 nm, and the method of producing the electron transport layer comprises any one or a combination of at least two of atomic layer deposition, electron beam deposition or reactive plasma deposition.

7. The production method according to claim 6, characterized by, The preparation method further comprises: coating a carbon paste on the surface of the electron transport layer; Preferably, the coating is performed by screen printing.

8. The production method according to claim 7, characterized by, The preparation method further comprises: after preparing the electron transport layer or coating the carbon paste, performing heat treatment on the obtained structure; Preferably, the heat treatment is performed at a temperature of 100-150°C for 10-60 min.

9. The process according to any one of claims 1 to 8, characterized in that, The preparation method comprises: (1) A 15-25 nm thick NiO layer obtained by magnetron sputtering is placed in an SO atmosphere and subjected to a passivation reaction at 80-120°C for 30-90 s to obtain a passivated NiO layer x (2) A 15-25 nm thick NiO layer obtained by magnetron sputtering is placed in an SO atmosphere and subjected to a passivation reaction at 80-120°C for 30-90 s to obtain a passivated NiO layer x (3) A 15-25 nm thick NiO layer obtained by magnet (2) The passivated NiO layer obtained in step (1) x The passivated surface of the layer is first prepared with a PbI2 layer, and then the CsFAPbI3 layer is prepared using the PbI2 layer. or the passivated NiO obtained in step (1) x The passivated surface of the layer is prepared by first preparing a composite layer of CsI and PbI2 with a mass ratio of (3-15):100, and then using the composite layer to prepare a CsFAPbI3 layer. (3) placing the CsFAPbI3 layer obtained in step (2) in a CS2 atmosphere, and performing a passivation reaction at 80-100°C for 2-10 min to obtain a passivated CsFAPbI3 layer; (4) on the surface of the passivated CsFAPbI3 layer obtained in step (3), an electron transport layer with a thickness of 20-40 nm is prepared, the electron transport layer comprising C 60 layer and / or a SnO2 layer, and then a carbon paste is coated on the surface of the electron transport layer by means of screen printing; After preparing the electron transport layer or coating the carbon paste, the obtained structure is subjected to heat treatment at 100-150°C for 10-60 min to obtain a perovskite battery.

10. A perovskite cell, characterized in that, The perovskite battery is obtained by the preparation method of any one of claims 1-9.

Images