Temperature control device and precursor containing device for semiconductor equipment
By utilizing the principle of thermal convection through a temperature control device, the problems of small heating range and slow speed in existing technologies have been solved, enabling rapid and uniform heating of the precursor and improving the production efficiency of semiconductor processes.
Patent Information
- Application Number
- CN202410525503.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-28
- Publication Date
- 2025-10-28
AI Technical Summary
In existing technologies, the heating method for precursors in semiconductor processes is mainly based on heat conduction, which results in a small heating range and slow speed, affecting production efficiency.
A temperature control device is used to form a flow channel through the first and second flow guiding bodies, and the temperature of the fluid is controlled by the principle of thermal convection, so as to achieve rapid and uniform heating of the precursor.
It improves the ability to control precursor temperature and the production efficiency of semiconductor processes, ensuring that the range and speed of temperature control meet the requirements of semiconductor processes.
Smart Images
Figure CN120844054A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor technology, and more specifically, to a temperature control device and a precursor container for semiconductor equipment. Background Technology
[0002] Precursors can serve as raw materials for chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes in semiconductor processes such as thin film fabrication. Precursors can be classified into gaseous, liquid, solid, and colloidal states according to their physical state. Liquid and solid precursors can be contained in a source bottle. In practical applications, the precursor is heated by heating the source bottle to generate saturated vapor. A carrier gas is then introduced into the source bottle to carry the saturated vapor of the precursor into the semiconductor process chamber to participate in the semiconductor process reaction.
[0003] In existing technologies, the source bottle is covered by a heating band containing a heating wire. The heat from the heating wire is conducted to the source bottle sequentially through the heating wire and the heating band. In other words, existing technologies heat the source bottle through heat conduction. However, there may be gaps between the heating band and the source bottle. Furthermore, as a form of heat transfer within a material and at its contact surface, the heat transfer rate of heat conduction depends primarily on the thermal conductivity and heat transfer area of the material. The choice of materials for heat conduction is relatively limited. Moreover, heat conduction is based on the microscopic movement of particles within an object, moving heat from a high-temperature region to a low-temperature region. This results in a short heat transfer distance and a slow heat transfer rate, leading to a small heating range for the heating band and a long time required to heat the precursor to the semiconductor process temperature. Consequently, the ability to heat the precursor is limited, and the production efficiency of the semiconductor process is low. Summary of the Invention
[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a temperature control device and a precursor holding device for semiconductor equipment, which can improve the ability to control the temperature of the precursor and improve the production efficiency of semiconductor processes.
[0005] To achieve the purpose of this invention, a temperature control device is provided for temperature control of a precursor container, comprising a first flow guiding body and a second flow guiding body, wherein the first flow guiding body is used to form a first flow guiding channel with the outer peripheral wall of the container, and the second flow guiding body is used to form a second flow guiding channel with the outer side of the bottom wall of the container;
[0006] The temperature control device further includes a first temperature regulating structure and a second temperature regulating structure corresponding to the first flow guiding body and the second flow guiding body, wherein the first temperature regulating structure is used to control the temperature of the fluid flowing into the first flow guiding channel, and the second temperature regulating structure is used to control the temperature of the fluid flowing into the second flow guiding channel.
[0007] Optionally, the temperature control device further includes at least one partition component, which is provided with a connecting hole. The partition component is disposed in the first flow channel and is used to divide the first flow channel into multiple interconnected flow cavities along the axial direction of the precursor holding body.
[0008] Optionally, the temperature control device further includes multiple flow guiding components, which are arranged one-to-one in multiple flow guiding cavities. The flow guiding components in two adjacent flow guiding cavities are arranged opposite each other in the radial direction of the first flow guiding channel. Each flow guiding component has a flow guiding inlet and a discharge hole. The flow guiding inlet of the flow guiding component in the uppermost flow guiding cavity serves as the fluid inlet of the first flow guiding channel. The flow guiding inlets of the other flow guiding components are connected to the communication hole. The discharge hole is used to discharge the fluid flowing in through the flow guiding inlet into the corresponding flow guiding cavity.
[0009] Optionally, the temperature control device further includes flow rate regulating components, the number of which is the same as the number of the connecting holes and they are arranged in a one-to-one correspondence. The flow rate regulating components are used to regulate the flow rate of the fluid flowing through the corresponding connecting hole.
[0010] Optionally, the flow rate regulating component includes interconnected regulating plates. The regulating plates penetrate the first flow guiding body and are inserted into the flow guiding cavity, covering the corresponding connecting hole and moving radially along the corresponding connecting hole to adjust the opening of the corresponding connecting hole.
[0011] Optionally, the temperature control device further includes a first pipeline, a second pipeline, and a heat insulation component. The first temperature regulating structure is connected to the fluid inlet of the first flow channel through the first pipeline, and the second temperature regulating structure is connected to the fluid inlet of the second flow channel through the second pipeline. At least one of the first pipeline and the second pipeline is covered with the heat insulation component.
[0012] Optionally, the temperature control device further includes a storage component, a manifold, and an output pipe. The storage component is connected to the fluid outlet of the first flow channel and the fluid outlet of the second flow channel through the manifold, respectively, for storing the fluid flowing out through the first flow channel and the second flow channel. The storage component is connected to the first temperature regulating structure and the second temperature regulating structure through the output pipe, respectively, for supplying the stored fluid to the first temperature regulating structure and the second temperature regulating structure through the output pipe.
[0013] Optionally, the temperature control device further includes a suction component, which is disposed on the manifold and is used to suction the fluid in the first flow channel and the second flow channel.
[0014] Optionally, the temperature control device further includes a flow regulating component, which is disposed on the output pipeline and is used to regulate the flow rate of the fluid flowing through the output pipeline.
[0015] Optionally, the temperature control device further includes a plurality of first temperature measuring components. At least one of the plurality of first temperature measuring components is configured to cooperate with the outer side of the bottom wall of the container body to detect the temperature of the bottom of the container body. One or more of the plurality of first temperature measuring components are configured to cooperate with the outer peripheral wall of the container body. One first temperature measuring component is configured to cooperate with the outer peripheral wall of the container body to detect the temperature of the container body. Alternatively, the plurality of first temperature measuring components are configured to cooperate with the outer peripheral wall of the container body at intervals along the axial direction to detect the temperature at multiple positions along the axial direction of the container body.
[0016] Optionally, at least one of the first and second flow guiding bodies includes a thermal insulation layer and a flame-retardant layer, the thermal insulation layer and the flame-retardant layer being stacked in the first flow guiding body in a direction from near the first flow guiding channel to away from the first flow guiding channel; and / or,
[0017] The thermal insulation layer and the flame retardant layer are stacked in the direction from near the second flow channel to away from the second flow channel of the second flow guide body.
[0018] The present invention also provides a precursor container for a semiconductor device, comprising a container body and the temperature control device described above. The container body is configured to be in continuous communication with the process chamber of the semiconductor device. The temperature control device is configured to cooperate with the container body and is used to control the temperature of the container body by controlling the temperature of the fluid through thermal convection.
[0019] The present invention has the following beneficial effects:
[0020] The temperature control device provided by this invention forms a first flow channel by connecting a first flow guiding body to the outer peripheral wall of the precursor container, and a second flow guiding body to the outer side of the bottom wall of the precursor container, forming a second flow guiding channel. Fluid can be introduced into both the first and second flow guiding channels. A first temperature regulating structure is provided corresponding to the first flow guiding body, and a second temperature regulating structure is provided corresponding to the second flow guiding body. The first temperature regulating structure controls the temperature of the fluid flowing into the first flow guiding channel, and the second temperature regulating structure controls the temperature of the fluid flowing into the second flow guiding channel. This temperature control of the fluids in the first and second flow guiding channels allows for heat convection between the fluids in these channels, which in turn affects the container and the precursor. Temperature control is achieved through thermal convection, which is based on the macroscopic movement of fluids. Relative displacement occurs between different parts of the fluid, and hot and cold fluids mix to achieve heat transfer. Heat transfer is accomplished through fluid flow. Therefore, the heat transfer distance of thermal convection is greater than that of thermal conduction, and the heat transfer rate of thermal convection is faster than that of thermal conduction. Furthermore, there are no gaps between the fluids in the first and second flow channels and the outer and bottom walls of the container. This improves the temperature control range of the temperature control device provided by this invention and reduces the time required for the temperature control device to bring the container and precursor to the temperature required for semiconductor processing. This enhances the ability to control the precursor temperature and improves the production efficiency of semiconductor processes.
[0021] The precursor container for semiconductor equipment provided by the present invention, by cooperating with the temperature control device provided by the present invention and the container body, can achieve temperature control of the container body through thermal convection by controlling the temperature of the fluid, thereby improving the ability to control the temperature of the precursor and improving the production efficiency of semiconductor process. Attached Figure Description
[0022] Figure 1 A schematic front view of the temperature control device and the precursor holding device for semiconductor equipment provided in an embodiment of the present invention;
[0023] Figure 2 A top view of the upper flow guiding cavity of the temperature control device and the precursor holding device for semiconductor equipment provided in the embodiments of the present invention;
[0024] Figure 3 A top view of the flow-guiding cavity in the temperature control device and the precursor container for semiconductor equipment provided in the embodiments of the present invention;
[0025] Figure 4A top view of the lower flow cavity of the temperature control device and the precursor container for semiconductor equipment provided in the embodiments of the present invention;
[0026] Figure 5 This is a schematic diagram of the flow guiding component provided in an embodiment of the present invention;
[0027] Figure 6 This is a schematic diagram of the structure of the first flow guiding body, the first temperature measuring component, and the holding body provided in an embodiment of the present invention;
[0028] Explanation of reference numerals in the attached figures:
[0029] 11-First flow guiding channel; 12-Second flow guiding channel; 13-First flow guiding body; 131-Fluid inlet of the first flow guiding channel; 132-Fluid outlet of the first flow guiding channel; 14-Second flow guiding body; 141-Fluid inlet of the second flow guiding channel; 142-Fluid outlet of the second flow guiding channel; 15-Separating component; 15a-Upper separating component; 15b-Lower separating component; 151-Connecting hole; 16-Flow guiding cavity; 16a-Upper flow guiding cavity; 16b-Middle flow guiding cavity; 16c-Lower flow guiding cavity; 17-Flow rate regulating component; 18-Flow guiding component; 181-Flow guiding pipe; 182-Flow guiding inlet; 183-Discharge hole; 191-Silicone rubber coated fiberglass cloth; 192-Foamed silicone rubber layer; 193-Insulation felt; 194-Outer shell; 21-First temperature measuring component; 21a-Upper first temperature measuring component; 21b-Middle first temperature measuring component; 21c-Lower first temperature measuring component; 21d-Bottom first temperature measuring component; 211-Temperature measuring element; 212-Electrical signal guide; 2121-First lead wire; 2122-Second lead wire; 2123-First plug; 2124-Second plug; 2125-Connection interface; 22-First temperature regulating structure; 23-Second temperature regulating structure; 24-First insulation component; 25-Second insulation component; 26-Storage component; 27-First flow regulating component; 28-Second flow regulating component; 29-Second temperature measuring component; 31-Suction component; 32-Replenishment component; 33-First output pipe section; 34-Second output pipe section; 35-Collection pipe; 100-Container body. Detailed Implementation
[0030] To enable those skilled in the art to better understand the technical solution of the present invention, the temperature control device and the precursor holding device for semiconductor equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.
[0031] In the process of using solid precursor sources as key process materials in thin film deposition technology, the sublimation properties of solid precursors are utilized to convert the source material into a gaseous phase and transport it into the reaction chamber of the system, thereby achieving the deposition of the target element. The amount of solid precursor entering the process chamber of semiconductor process equipment directly affects important indicators such as film thickness, film deposition rate, and process stability. A common challenge is that process chambers such as vapor deposition chambers cannot obtain a continuous and stable mixture of vapors from the solid source cylinder, leading to product process instability. The core of solving this problem is to ensure the stability of the continuous sublimation of the solid precursor. The amount of precursor sublimation is not only related to its own physicochemical properties but also to factors such as the heating temperature of the precursor carrier container and the transport method of the precursor, with the heating temperature being particularly important.
[0032] The currently common method involves completely encasing the source bottle in a heating band to provide heat energy, which is then transferred to the inside of the source bottle via heat conduction, indirectly heating the solid precursor source inside to meet the requirements of solid precursor source vapor for vapor deposition processes. However, this method is often limited by inherent shortcomings in heating band manufacturing technology. First, the gap between the source bottle and the heating device (heating band) can affect the heating effect to some extent. Second, the heating wire and thermocouple probe of the heating band are often embedded inside the encapsulation material, resulting in a difference between the set temperature and the actual measured temperature of the source bottle wall, making it difficult to achieve precise temperature control (for example, in ALD processes, some ALD processes require a temperature accuracy of <±1℃ for the source bottle). Furthermore, for some semiconductor processes, for example, ALD processes have special requirements for the temperature distribution inside the source bottle, such as requiring a stepped temperature increase from the bottom to the top of the source bottle. In view of such technical needs, this application proposes a temperature control device based on the principle of convective heat transfer and a precursor holding device for semiconductor equipment. While meeting the requirements of stepped temperature distribution, it improves temperature controllability, enhances the supply stability of solid precursors during mass production, and thus improves process repeatability.
[0033] like Figures 1-4 As shown, this embodiment of the invention provides a temperature control device for controlling the temperature of a precursor container 100. It includes a first flow guiding body 13 and a second flow guiding body 14. The first flow guiding body 13 forms a first flow guiding channel 11 with the outer peripheral wall of the container 100, and the second flow guiding body 14 forms a second flow guiding channel 12 with the outer side of the bottom wall of the container 100. The temperature control device also includes a first temperature regulating structure and a second temperature regulating structure corresponding to the first flow guiding body 13 and the second flow guiding body 14. The first temperature regulating structure controls the temperature of the fluid flowing into the first flow guiding channel 11, and the second temperature regulating structure controls the temperature of the fluid flowing into the second flow guiding channel 12.
[0034] The temperature control device provided in this embodiment of the invention forms a first flow channel 11 by a first flow guiding body 13 and the outer peripheral wall of the precursor holding body 100, and a second flow guiding body 14 and the outer side of the bottom wall of the precursor holding body 100 form a second flow guiding channel 12. Fluid can be introduced into the first flow guiding channel 11 and the second flow guiding channel 12. By setting a first temperature regulating structure corresponding to the first flow guiding body 13 and a second temperature regulating structure corresponding to the second flow guiding body 14, the temperature of the fluid flowing into the first flow guiding channel 11 can be controlled by the first temperature regulating structure, and the temperature of the fluid flowing into the second flow guiding channel 12 can be controlled by the second temperature regulating structure. In this way, by controlling the temperature of the fluid in the first flow guiding channel 11 and the second flow guiding channel 12, the heat generated by the fluid in the first flow guiding channel 11 and the second flow guiding channel 12 can be used to control the temperature. The flow control device controls the temperature of the container 100 and the precursor. Since heat convection is based on the macroscopic movement of the fluid, relative displacement occurs between different parts of the fluid, and hot and cold fluids mix to achieve heat transfer. Heat transfer is achieved through the flow of the fluid. Therefore, the heat transfer distance of heat convection is larger than that of heat conduction, and the heat transfer rate of heat convection is faster than that of heat conduction. Furthermore, there are no gaps between the fluid in the first guide channel 11 and the second guide channel 12 and the outer peripheral wall and bottom wall of the container 100. This improves the temperature control range of the temperature control device provided in this embodiment of the invention and reduces the time required for the temperature control device to control the temperature of the container 100 and the precursor to the temperature required for semiconductor processing. This improves the ability to control the temperature of the precursor and increases the production efficiency of semiconductor processing.
[0035] Optionally, the precursor contained in the precursor holding device can be a solid precursor or a liquid precursor.
[0036] Optionally, the fluid may include a gas.
[0037] Optionally, the gas may include air.
[0038] Optionally, the first flow guiding body 13 may be annular and may surround the outer peripheral wall of the holding body 100, and may form an annular first flow guiding channel 11 with the outer peripheral wall of the holding body 100.
[0039] In practical applications, the inner diameter of the first flow guiding body 13 can be larger than the outer diameter of the holding body 100. When the first flow guiding body 13 is fitted around the holding body 100, i.e., when the first flow guiding body 13 surrounds the outer peripheral wall of the holding body 100, an annular first flow guiding channel 11 can be formed between the inner peripheral wall of the first flow guiding body 13 and the outer peripheral wall of the holding body 100. By forming the annular first flow guiding channel 11, fluid can surround the outer peripheral wall of the holding body 100, thus enabling temperature control of the holding body 100 and the precursor from around the outer peripheral wall of the holding body 100. This improves the uniformity of temperature control, further enhances the ability to control the temperature of the precursor, and further improves the production efficiency of semiconductor processes.
[0040] Optionally, the first flow guide body 13 can be connected to the outer peripheral wall of the holding body 100.
[0041] Optionally, the radial cross-sectional shape of the first flow guiding body 13 can be the same as the radial cross-sectional shape of the holding body 100. For example, if the radial cross-section of the holding body 100 is circular, then the radial cross-section of the first flow guiding body 13 can also be circular.
[0042] Optionally, the second flow guiding body 14 can be bowl-shaped and can be disposed opposite to the outer side of the bottom wall of the holding body 100. In this way, after the second flow guiding body 14 is assembled with the outer side of the bottom wall of the holding body 100, a second flow guiding channel 12 can be formed between the bowl-shaped recess of the second flow guiding body 14 and the outer side of the bottom wall of the holding body 100.
[0043] Optionally, the second flow guide body 14 can be connected to the outer side of the bottom wall of the holding body 100.
[0044] Optionally, the radial cross-sectional shape of the second flow guiding body 14 can be the same as that of the container body 100. For example, if the radial cross-section of the container body 100 is circular, then the radial cross-section of the second flow guiding body 14 can also be circular.
[0045] like Figure 1 As shown, in one embodiment of the present invention, the temperature control device may further include at least one partition component 15. The partition component 15 is provided with a connecting hole 151. The partition component 15 is disposed in the first flow channel 11 and is used to divide the first flow channel 11 into a plurality of interconnected flow cavities 16 along the axial direction of the precursor holding body 100.
[0046] like Figure 1As shown, for example, there are two partition components 15, each partition component 15 is provided with a connecting hole 151, and each partition component 15 divides the first flow channel 11 into three interconnected flow cavities 16 along the axial direction of the precursor holding body 100. However, the number of partition components 15 is not limited to two, for example, the number of partition components 15 can also be one, three or more.
[0047] By providing a connecting hole 151 on each partition 15, two adjacent flow guiding cavities 16 can be connected through the connecting hole 151 on the partition 15 between them, thus allowing multiple flow guiding cavities 16 to be connected sequentially. By using the partition 15 to divide the first flow guiding channel 11 along the axial direction of the precursor holding body 100 into multiple interconnected flow guiding cavities 16, multiple regions along the axial direction of the holding body 100 can be corresponding one-to-one with multiple flow guiding cavities 16. Since thermal convection of fluid can be formed within each flow guiding cavity 16, temperature control can be achieved for multiple regions along the axial direction of the holding body 100 through the thermal convection of fluid formed within the multiple flow guiding cavities 16.
[0048] This allows for adjustment of the heat transfer rate of the fluid convection within each flow channel 16 by regulating the flow rate of the fluid in each flow channel 16. This enables different semiconductor processes to perform stepped heating or synchronous heating on different areas of the container 100, thereby meeting the multi-directional temperature requirements of the precursor. For example, by adjusting the flow rate of the fluid in the multiple guide cavities 16, the flow rate of the fluid in the multiple guide cavities 16 can be gradually increased from top to bottom or from bottom to top along the axial direction of the holding body 100. This can gradually increase the heat transfer rate of the fluid in the multiple guide cavities 16 along the axial direction of the holding body 100, thereby achieving a gradual increase in the temperature of the holding body 100 and the precursor along the axial direction of the holding body 100. As another example, by adjusting the flow rate of the fluid in the multiple guide cavities 16, the flow rate of the fluid in the multiple guide cavities 16 can be made equal along the axial direction of the holding body 100. This can make the heat transfer rate of the fluid in the multiple guide cavities 16 equal along the axial direction of the holding body 100, thereby achieving equal temperatures of the holding body 100 and the precursor along the axial direction of the holding body 100.
[0049] Specifically, the temperature control device provided in this embodiment of the invention controls the temperature of the container 100 and its precursor based on the heat transfer process between the moving fluid (the fluid flowing in the first guide channel 11 and the second guide channel 12) and the solid wall (the outer peripheral wall and the outer side of the bottom wall of the container 100). Therefore, it belongs to heat convection heat transfer and involves forced convection (forced laminar flow and forced turbulent flow). According to Reynolds' law, the flow state of a fluid changes with its velocity, becoming laminar or turbulent. In laminar flow, since there is no vortex motion or mixing, the heat transfer between the solid wall and the contacting fluid or between adjacent fluid layers is heat conduction. However, there is a temperature difference in the direction of fluid flow, and the flow state, such as velocity, has a significant impact on heat transfer. In turbulent flow, due to the vortex motion and mixing of fluid particles at different temperatures, the heat transfer rate is greater than that of laminar flow.
[0050] According to Newton's law of cooling, the rate of heat transfer via convection between a solid wall and a fluid is defined as follows:
[0051] q = hAΔt;
[0052] Where q is the heat transfer rate, h is the heat transfer coefficient, A is the heat transfer area, and Δt is the temperature difference between the solid wall and the fluid. The heat transfer coefficient h is solved using mathematical analysis. When the fluid flows laminarly over the solid wall and undergoes steady-state heat transfer, the average heat transfer coefficient h is... m The formula for calculation is:
[0053]
[0054] Where Pr is the Prandtl number of the fluid, Re m For laminar flow, Re m The formula for calculation is:
[0055]
[0056] Where L is the distance the fluid travels, u0 is the fluid velocity, and v is the fluid viscosity.
[0057] When heat is transferred in turbulent flow, the average convective heat transfer coefficient h n The formula for calculation is:
[0058]
[0059] The formula for calculating A is:
[0060]
[0061] Among them, Re n For laminar flow, Re nThe calculation formula and Re m The calculation formulas are the same.
[0062] From the above formula, it can be seen that regardless of whether the fluid flow is laminar or turbulent, the average heat transfer coefficient h is... m and h n Both are functions of fluid velocity. Increasing the fluid velocity can increase the heat transfer coefficient by convection, thereby increasing the heat transfer rate and consequently raising the temperature of the container 100 and the precursor.
[0063] Furthermore, by adjusting the flow rate of the fluid within each guide cavity 16, the heat transfer rate of the fluid convection within each guide cavity 16 can be adjusted. Compared with existing technologies, this improves the convenience, flexibility, and accuracy of temperature control for different regions of the container 100 and the precursor, thereby improving the stability of saturated vapor generation in the precursor, which in turn improves the stability and repeatability of the semiconductor process, and ultimately improves the semiconductor process results (e.g., improving the quality of thin films prepared by the semiconductor process). Specifically, in existing technologies, the heating effect of the heating belt on different regions of the container 100 and the precursor needs to be adjusted by adjusting the distribution of heating wires in the heating belt to meet different semiconductor process requirements. However, the distribution of heating wires needs to be adjusted before the heating belt is assembled, and cannot be adjusted according to the actual situation during the semiconductor process. This results in poor flexibility in adjusting the heating effect of the heating belt. Moreover, each adjustment of the heating wire distribution requires testing after the heating belt is assembled, and then adjustment based on the test structure and experience. This results in poor convenience in adjusting the heating effect of the heating belt. The temperature of two adjacent heating wires can easily affect each other, causing changes in the heating effect of the heating band. Moreover, temporary adjustments cannot be made when these changes occur, resulting in poor accuracy of the heating effect. However, the temperature control device provided in this embodiment of the invention can adjust the heat transfer rate of the fluid convection in each flow channel 16 by adjusting the flow rate of the fluid in each flow channel 16 according to the actual temperature of the container and the precursor in the semiconductor process. This adjusts the temperature control effect of the device and improves the convenience, flexibility, and accuracy of temperature control for different areas of the container 100 and the precursor.
[0064] like Figure 1-Figure 5As shown, in one embodiment of the present invention, the temperature control device may further include a plurality of flow guiding components 18, which are arranged one-to-one in a plurality of flow guiding cavities 16. The flow guiding components 18 in two adjacent flow guiding cavities 16 are arranged opposite each other in the radial direction of the first flow guiding channel 11. Each flow guiding component 18 has a flow guiding inlet 182 and a discharge hole 183. The flow guiding inlet 182 of the flow guiding component 18 in the uppermost flow guiding cavity 16 is used as the fluid inlet 131 of the first flow guiding channel 11. The flow guiding inlets 182 of the other flow guiding components 18 are connected to the connecting hole 151. The discharge hole 183 is used to discharge the fluid flowing in through the flow guiding inlet 182 into the corresponding flow guiding cavity 16.
[0065] In practical applications, fluid can enter the uppermost guide cavity 16 through the guide inlet 182 (i.e., the fluid inlet 131 of the first guide channel 11) of the guide component 18 in the uppermost guide cavity 16, and then be discharged into the uppermost guide cavity 16 through the discharge hole 183 of the guide component 18 in the uppermost guide cavity 16. Since the flow guiding components 18 in the two adjacent flow guiding cavities 16 are arranged opposite each other in the radial direction of the first flow guiding channel 11, and the flow inlets 182 of the other flow guiding components 18, except for the flow guiding component 18 in the uppermost flow guiding cavity 16, are connected to the connecting hole 151, the fluid entering the uppermost flow guiding cavity 16 can flow along the circumference of the uppermost flow guiding cavity 16 from both sides of its entry position. When it flows to the other side of the first flow guiding channel 11 opposite to its entry position, it passes through the connecting hole 151 and the flow inlet 182 of the flow guiding component 18 connected to the connecting hole 151, and enters the flow guiding component 18 in another flow guiding cavity 16 adjacent to the uppermost flow guiding cavity 16 and located below the uppermost flow guiding cavity 16. This allows the fluid to form thermal convection within the first flow channel 11, enabling temperature control of the container 100 and its precursor through the thermal convection of the fluid on the peripheral wall of the container 100. This allows for various temperature control requirements and improves the uneven distribution of fluid around the flow cavity 16, reducing the number of areas that the fluid cannot reach around the flow cavity 16, thereby further improving the uniformity of temperature control in the same area.
[0066] like Figure 1 and Figure 4 As shown, optionally, the lowest flow-guiding cavity 16 may be provided with a fluid outlet 132 serving as a first flow-guiding channel 11, and the fluid outlet 132 of the first flow-guiding channel 11 and the flow-guiding component 18 in the lowest flow-guiding cavity 16 are arranged opposite to each other in the radial direction of the first flow-guiding channel 11. The fluid outlet 132 of the first flow-guiding channel 11 is used to discharge the fluid in the lowest flow-guiding cavity 16.
[0067] This design allows the fluid discharged into the lowest-level guide cavity 16 through the discharge hole 183 of the guide component 18 in the lowest-level guide cavity 16 to flow circumferentially from both sides of the position where it enters the lowest-level guide cavity 16, and when it flows to the opposite side of the position where it enters the lowest-level guide cavity 16 in the radial direction of the first guide channel 11, it is discharged to the outside of the first guide channel 11 through the fluid outlet 132 of the first guide channel 11.
[0068] like Figure 5 As shown, optionally, the flow guiding component 18 may include a flow guiding pipe 181, the axial direction of which is parallel to the axial direction of the corresponding flow guiding cavity 16. The flow guiding pipe 181 has a flow guiding inlet 182 and a discharge hole 183, which is disposed on the peripheral wall of the flow guiding pipe 181.
[0069] This design allows the fluid discharged through the discharge hole 183 into the flow guide cavity 16 to enter the flow guide cavity 16 circumferentially, thereby enabling the fluid entering the flow guide cavity 16 to flow more smoothly along the circumferential direction of the flow guide cavity 16.
[0070] Optionally, the guide tube 181 can be made of aluminum alloy.
[0071] like Figure 5 As shown, optionally, the guide tube 181 may have multiple discharge hole groups, which are evenly spaced in the circumferential direction of the guide tube 181. Each discharge hole group may include multiple discharge holes 183, and the multiple discharge holes 183 in the same discharge hole group are evenly spaced in the axial direction of the guide tube 181.
[0072] This design can improve the uniformity of fluid distribution within the flow guiding cavity 16.
[0073] like Figure 1 As shown, in one embodiment of the present invention, the temperature control device may further include a flow rate regulating component 17. The number of flow rate regulating components 17 is the same as the number of connecting holes 151 and they are arranged in a one-to-one correspondence. The flow rate regulating component 17 is used to regulate the flow rate of the fluid flowing through the corresponding connecting hole 151.
[0074] By adjusting the flow rate of the fluid flowing through the corresponding connecting hole 151 using the flow rate adjustment component 17, the flow rate of the fluid entering the guide cavity 16 after flowing through the connecting hole 151 can be adjusted, thereby adjusting the flow rate of the fluid in each guide cavity 16.
[0075] like Figure 1As shown, in one embodiment of the present invention, the flow rate regulating component 17 may include an regulating plate connected to each other. The regulating plate is inserted into the flow guiding cavity 16 through the first flow guiding body 13 and can cover the corresponding connecting hole 151. It can also move radially along the corresponding connecting hole 151 to adjust the opening degree of the corresponding connecting hole 151.
[0076] By moving the adjusting plate covering the connecting hole 151 radially along the connecting hole 151, the area of the connecting hole 151 covered by the adjusting plate can be adjusted (i.e., the opening of the connecting hole 151 can be adjusted), thereby adjusting the flow rate of the fluid flowing through the connecting hole 151.
[0077] Optionally, the adjustment plate can be made of stainless steel.
[0078] like Figure 1 As shown, optionally, the second flow guiding body 14 is provided with a fluid inlet 141 of the second flow guiding channel 12 at the radial center of the second flow guiding channel 12, and the second flow guiding body 14 is provided with fluid outlets 142 of the second flow guiding channel 12 on opposite sides of the second flow guiding channel 12 in the radial direction.
[0079] In practical applications, fluid can enter the second guide channel 12 from its radial center through the fluid inlet 141. The fluid entering the second guide channel 12 can flow radially to opposite sides of the second guide channel 12 and then flow out from the fluid outlets 142 on opposite sides of the second guide channel 12. This allows the fluid to flow evenly through the entire second guide channel 12, thereby improving the uniformity of temperature control of the bottom wall of the container 100 and the bottom of the precursor.
[0080] like Figure 1 As shown, optionally, the first temperature regulating structure 22 can be connected to the fluid inlet 131 and the fluid outlet 132 of the first flow channel 11 respectively, and the second temperature regulating structure 23 can be connected to the fluid inlet 141 and the fluid outlet 142 of the second flow channel 12 respectively.
[0081] In practical applications, after the fluid enters the first guide channel 11 through the fluid inlet 131, it flows towards the fluid outlet 132 within the first guide channel 11. During the flow of the fluid from the fluid inlet 131 to the fluid outlet 132 within the first guide channel 11, it can exchange heat with the holding body 100 and the precursor in the form of thermal convection, thereby causing a change in the temperature of the fluid. After the fluid is discharged from the fluid outlet 132 of the first guide channel 11, it can enter the first temperature regulating structure 22. The first temperature regulating structure 22 can regulate the temperature of the fluid after the temperature change and transport the temperature-regulated fluid to the fluid inlet 131 of the first guide channel 11, thereby realizing temperature control of the fluid flowing into the first guide channel 11, so that the fluid can continuously exchange heat with the holding body 100 and the precursor. Similarly, after the fluid enters the second guide channel 12 through the fluid inlet 141, it flows towards the fluid outlet 142 within the second guide channel 12. During the flow of the fluid from the fluid inlet 141 to the fluid outlet 142 within the second guide channel 12, it can exchange heat with the holding body 100 and the precursor in the form of thermal convection, thereby causing the fluid temperature to decrease. After the fluid is discharged from the fluid outlet 142 of the second guide channel 12, it can enter the second temperature regulating structure 23. The second temperature regulating structure 23 can regulate the temperature of the fluid after the temperature change and transport the temperature-regulated fluid to the fluid inlet 141 of the second guide channel 12, thereby realizing temperature control of the fluid flowing into the second guide channel 12, so that the fluid can continuously exchange heat with the holding body 100 and the precursor.
[0082] Optionally, the first temperature control structure 22 may include a first heating element.
[0083] Optionally, the first heating element may include an air preheater.
[0084] Optionally, the second temperature control structure 23 may include a second heating element.
[0085] Optionally, the second heating element may include an air preheater.
[0086] In one embodiment of the present invention, the temperature control device may further include a first pipeline, a second pipeline and a heat insulation component. The first temperature regulating structure 22 is connected to the fluid inlet 131 of the first flow channel 11 through the first pipeline, and the second temperature regulating structure 23 is connected to the fluid inlet 141 of the second flow channel 12 through the second pipeline. At least one of the first pipeline and the second pipeline is covered with a heat insulation component.
[0087] like Figure 1As shown, optionally, both the first and second pipes can be covered with insulation components.
[0088] Specifically, the insulation component covering the first pipeline is the first insulation component 24, and the insulation component covering the second pipeline is the second insulation component 25. In practical applications, the first temperature-regulating structure 22 can transport the temperature-regulating fluid through the first pipeline to the fluid inlet 131 of the first flow channel 11, so that the temperature-regulating fluid enters the first flow channel 11. The second temperature-regulating structure 23 can transport the temperature-regulating fluid through the second pipeline to the fluid inlet 141 of the second flow channel 12, so that the temperature-regulating fluid enters the second flow channel 12.
[0089] By covering the first pipeline with a first insulation component 24, the temperature-controlled fluid flowing through the first pipeline can be kept warm, reducing the degree of temperature change of the temperature-controlled fluid during its flow through the first pipeline. This ensures that the fluid maintains a temperature close to its temperature after flowing through the first pipeline, thus ensuring that the fluid entering the first flow channel 11 has a temperature close to its temperature after temperature control. Similarly, by covering the second pipeline with a second insulation component 25, the temperature-controlled fluid flowing through the second pipeline can be kept warm, reducing the degree of temperature change of the temperature-controlled fluid during its flow through the second pipeline. This ensures that the fluid maintains a temperature close to its temperature after flowing through the second pipeline, thus ensuring that the fluid entering the second flow channel 12 has a temperature close to its temperature after temperature control.
[0090] Optionally, the insulation component may include insulation tape.
[0091] like Figure 1 As shown, in one embodiment of the present invention, the temperature control device may include a storage component 26, a manifold 35, and an output pipe. The storage component 26 is connected to the fluid outlet 132 of the first flow channel 11 and the fluid outlet 142 of the second flow channel 12 through the manifold 35, and is used to store the fluid flowing out of the first flow channel 11 and the second flow channel 12. The storage component 26 is connected to the first temperature regulating structure 22 and the second temperature regulating structure 23 through the output pipe, and is used to deliver the stored fluid to the first temperature regulating structure 22 and the second temperature regulating structure 23 through the output pipe.
[0092] In practical applications, the fluid discharged through the fluid outlet 132 of the first flow channel 11 and the fluid outlet 142 of the second flow channel 12 can first enter the collection pipe 35, and then flow through the collection pipe 35 to the storage component 26, where it is stored in a concentrated manner, and then transported to the first temperature regulating structure 22 and the second temperature regulating structure 23 respectively through the output pipe.
[0093] Optionally, storage component 26 may include a buffer container.
[0094] Optionally, the manifold 35 may include a first manifold branch pipe, a second manifold branch pipe, and a manifold main pipe. The first manifold branch pipe is connected to the fluid outlet 132 of the first flow channel 11, the second manifold branch pipe is connected to the fluid outlet 142 of the second flow channel 12, and the manifold main pipe is connected to the first manifold branch pipe, the second manifold branch pipe, and the storage component 26, respectively.
[0095] In practical applications, the fluid discharged through the fluid outlet 132 of the first flow channel 11 can first enter the first flow branch pipe, then flow through the first flow branch pipe to the flow main pipe, and then flow through the flow main pipe to the storage component 26. The fluid discharged through the fluid outlet 142 of the second flow channel 12 can first enter the second flow branch pipe, then flow through the second flow branch pipe to the flow main pipe, and then flow through the flow main pipe to the storage component 26.
[0096] like Figure 1 As shown, in one embodiment of the present invention, the temperature control device may further include a suction component 31, which is disposed on the manifold 35 and is used to suction the fluid in the first guide channel 11 and the second guide channel 12.
[0097] By using the suction component 31 to suction the fluid in the first guide channel 11 and the second guide channel 12, the fluid can flow more smoothly in the first guide channel 11 and the second guide channel 12, thereby improving the stability of temperature control of the holding body 100 and the precursor.
[0098] Optionally, the suction component 31 may include an air pump.
[0099] In one embodiment of the present invention, the temperature control device may further include a flow regulating component, which is disposed on the output pipeline and is used to regulate the flow rate of the fluid flowing through the output pipeline.
[0100] By adjusting the flow rate of the fluid flowing through the output pipe using the flow regulating component, the flow rate of the fluid being transported to the first temperature regulating structure 22 and the second temperature regulating structure 23 through the output pipe can be adjusted, thereby adjusting the flow velocity of the fluid entering the first flow guiding channel 11 and the second flow guiding channel 12, and further adjusting the heat transfer rate of the fluid convection in the first flow guiding channel 11 and the second flow guiding channel 12.
[0101] Optionally, the flow regulation component may include a mass flow controller (MFC).
[0102] like Figure 1As shown, optionally, the output pipeline may include a first output pipe section 33 and a second output pipe section 34, and the flow regulating component may include a first flow regulating component 27 and a second flow regulating component 28. The storage component 26 is connected to the first temperature regulating structure 22 through the first output pipe section 33 and to the second temperature regulating structure 23 through the second output pipe section 34. The first flow regulating component 27 is disposed on the first output pipe section 33 and is used to regulate the flow rate of the fluid flowing through the first output pipe section 33. The second flow regulating component 28 is disposed on the second output pipe section 34 and is used to regulate the flow rate of the fluid flowing through the second output pipe section 34.
[0103] like Figure 1 As shown, in one embodiment of the present invention, the temperature control device may further include a plurality of first temperature measuring components 21. At least one of the plurality of first temperature measuring components 21 is configured to cooperate with the outer side of the bottom wall of the holding body 100 to detect the temperature of the bottom of the holding body 100. One or more of the plurality of first temperature measuring components 21 are configured to cooperate with the outer peripheral wall of the holding body 100. One first temperature measuring component 21 is configured to cooperate with the outer peripheral wall of the holding body 100 to detect the temperature of the holding body 100. Alternatively, the plurality of first temperature measuring components 21 are configured to cooperate with the outer peripheral wall of the holding body 100 at intervals along the axial direction of the holding body 100 to detect the temperature at multiple positions along the axial direction of the holding body 100.
[0104] By means of a first temperature measuring component 21 that is fitted to the outer side of the bottom wall of the holding body 100, the temperature of the bottom of the holding body 100 can be detected, thereby allowing the understanding of the temperature of the precursor located at the bottom of the holding body 100. When there is only one first temperature measuring component 21 fitted to the outer peripheral wall of the holding body 100, the temperature of the region corresponding to the first temperature measuring component 21 along the axial direction of the holding body 100 can be detected, thereby allowing the understanding of the temperature of the precursor in the region corresponding to the first temperature measuring component 21. When there are multiple first temperature measuring components 21 fitted to the outer peripheral wall of the holding body 100, the multiple first temperature measuring components 21 can be fitted to the outer peripheral wall of the holding body 100 at intervals along the axial direction of the holding body 100, thereby allowing the detection of the temperature of multiple regions along the axial direction of the precursor.
[0105] In practical applications, the overall temperature state of the precursor can be determined by detecting the temperature at the bottom of the container 100 and the temperature of the area corresponding to the first temperature measuring component 21 along the axial direction of the container 100. This allows for adjustment of the fluid flow rate in the first and second flow channels 11 and 12, thereby adjusting the heat transfer rate of the fluid convection within these channels. Ultimately, this adjusts the temperature of the container 100 and the precursor to meet semiconductor process requirements. Furthermore, the fluid flow rate in each flow cavity 16 can be adjusted, thereby adjusting the heat transfer rate of the fluid convection within each cavity. This, in turn, adjusts the temperature at different axial positions of the container 100 and the precursor, ensuring that the temperatures at these positions all meet semiconductor process requirements.
[0106] In one embodiment of the present invention, at least one of the first flow guiding body 13 and the second flow guiding body 14 may include a heat insulation layer and a flame retardant layer. The heat insulation layer and the flame retardant layer of the first flow guiding body 13 are stacked in the direction of the first flow guiding body 13 from near the first flow guiding channel 11 to away from the first flow guiding channel 11; and / or, the heat insulation layer and the flame retardant layer are stacked in the direction of the second flow guiding body 14 from near the second flow guiding channel 12 to away from the second flow guiding channel 12.
[0107] like Figure 6 As shown, optionally, the flame retardant layer may include silicone rubber coated fiberglass cloth 191.
[0108] like Figure 6 As shown, optionally, the insulation layer may include a foamed silicone rubber layer 192 and / or a heat insulation felt 193.
[0109] like Figure 6 As shown, optionally, at least one of the first flow guiding body 13 and the second flow guiding body 14 may further include a shell 194. The shell 194, the insulation layer and the flame retardant layer are stacked in the first flow guiding body 13 in the direction from near the first flow guiding channel 11 to away from the first flow guiding channel 11, and the shell 194 is away from the first flow guiding channel 11 relative to the insulation layer and the flame retardant layer. The shell 194, the insulation layer and the flame retardant layer are stacked in the second flow guiding body 14 in the direction from near the second flow guiding channel 12 to away from the second flow guiding channel 12, and the shell 194 is away from the second flow guiding channel 12 relative to the insulation layer and the flame retardant layer.
[0110] Optionally, the casing 194 can be made of stainless steel.
[0111] like Figure 6As shown, optionally, in the direction from near the first flow channel 11 to away from the first flow channel 11, the first flow guiding body 13 may include a silicone rubber coated fiberglass cloth 191, a foamed silicone rubber layer 192, a heat insulation felt 193, a foamed silicone rubber layer 192, a silicone rubber coated fiberglass cloth 191, and a shell 194 stacked in sequence.
[0112] like Figure 6 As shown, optionally, the first temperature measuring component 21 may include a temperature measuring element 211 and an electrical signal guide 212. The temperature measuring element 211 is configured to cooperate with the holding body 100 and is used to detect the temperature of the holding body 100. The electrical signal guide 212 passes through the first flow guiding body 13 and the second flow guiding body 14. One end of the electrical signal guide 212 is electrically connected to the temperature measuring element 211, and the other end is used to be electrically connected to the signal processing component.
[0113] When the temperature measuring element 211 detects the temperature of the container 100, it generates an electrical signal. The electrical signal guide 212 is used to transmit the electrical signal generated by the temperature measuring element 211 to the signal processing unit. The signal processing unit processes the electrical signal generated by the temperature measuring element 211 and converts it into temperature.
[0114] Optionally, the temperature sensing element 211 may include a thermocouple.
[0115] like Figure 6 As shown, optionally, the electrical signal guide 212 may include a first lead 2121, a second lead 2122, a first plug 2123, a second plug 2124, and a connector 2125. One end of the first lead 2121 is electrically connected to the temperature measuring element 211, and the other end is electrically connected to the first plug 2123. The second lead 2122 is disposed through the first current guiding body 13, with one end electrically connected to the connector 2125 and the other end electrically connected to the second plug 2124. The connector 2125 is used for electrical connection of the first plug 2123, and the second plug 2124 is used for electrical connection of the signal processing component.
[0116] like Figure 6 As shown, optionally, a portion of the second lead 2122 can be disposed between the heat insulation felt 193 and a foamed silicone rubber layer 192 near the first flow channel 11, so that the second lead 2122 can penetrate the first flow body 13.
[0117] like Figure 6 As shown, optionally, the temperature measuring element 211 is used to fit tightly against the outer peripheral wall and bottom wall of the container body 100.
[0118] In existing technologies, the temperature measuring element is placed in the heating band, and the distance between the temperature measuring element and the holding body 100 is relatively large. Furthermore, the temperature measuring element is also covered by the heating band, resulting in a large error between the temperature detected by the temperature measuring element and the actual temperature of the holding body 100. This leads to poor accuracy in temperature control of the holding body 100 and the precursor based on the temperature detected by the temperature measuring element. However, the temperature control device provided in this embodiment of the invention reduces the error between the temperature detected by the temperature measuring element 211 and the actual temperature of the holding body 100 by closely attaching the temperature measuring element 211 to the peripheral wall and bottom wall of the holding body 100. This improves the accuracy of temperature control of the holding body 100 and the precursor based on the temperature detected by the temperature measuring element 211.
[0119] like Figure 1 As shown, optionally, the temperature control device may also include a second temperature measuring component 29, which is configured in conjunction with the output pipeline to detect the temperature of the fluid flowing from the storage component 26 to the output pipeline.
[0120] like Figure 1 As shown, optionally, the second output pipe section 34 can be connected to the storage component 26 through the first output pipe section 33. That is, the fluid in the storage component 26 can first enter the first output pipe section 33. Part of the fluid entering the first output pipe section 33 can enter the first temperature regulating structure 22 through the first output pipe section 33, and the other part can enter the second output pipe section 34. In this case, the second temperature measuring component 29 can be set in conjunction with the first output pipe section 33, so as to detect the temperature of the fluid flowing from the storage component 26 to the first output pipe section 33 and the second output pipe section 34.
[0121] Optionally, the second temperature measuring component 29 may include a temperature measuring probe.
[0122] like Figure 1 As shown, optionally, the storage component 26 can also be connected to the replenishment component 32, which is used to replenish the storage component 26 with cryogenic fluid.
[0123] In practical applications, when the temperature of the fluid flowing out of the storage component 26 detected by the second temperature measuring component 29 is higher than the lower of the temperature regulation temperature set by the first temperature regulation structure 22 and the second temperature regulation structure 23, the replenishing component 32 can replenish the storage component 26 with low-temperature fluid to lower the temperature of the fluid in the storage component 26. This allows the temperature of the fluid flowing out of the storage component 26 to be lower than the temperature regulation temperature set by the first temperature regulation structure 22 and the second temperature regulation structure 23, thereby ensuring that the temperature of the fluid flowing from the first temperature regulation structure 22 to the first flow channel 11 and the temperature of the fluid flowing from the second temperature regulation structure 23 to the second flow channel 12 meet the semiconductor process requirements.
[0124] The following describes a method for regulating the temperature of the holding body 100 and the precursor using a temperature control device provided in this embodiment of the invention, taking as an example that the temperature of the holding body 100 and the precursor gradually increases from bottom to top along the axial direction of the holding body 100. For instance, this method utilizes two separating components 15, three guiding cavities 16, and four first temperature measuring components 21. Figure 1 As shown, the two separating components 15 are the upper separating component 15a and the lower separating component 15b, the three guiding cavities 16 are the upper guiding cavity 16a, the middle guiding cavity 16b and the lower guiding cavity 16c, and the four first temperature measuring components 21 are the upper first temperature measuring component 21a, the middle first temperature measuring component 21b, the lower first temperature measuring component 21c and the bottom first temperature measuring component 21d, wherein the upper first temperature measuring component 21a, the middle first temperature measuring component 21b and the lower first temperature measuring component 21c correspond one-to-one with the upper guiding cavity 16a, the middle guiding cavity 16b and the lower guiding cavity 16c. Once the temperatures detected by the four first temperature measuring components 21 have stabilized, fine-tuning can be performed according to semiconductor process requirements. When the temperatures detected by the upper first temperature measuring component 21a and the lower first temperature measuring component 21d are too high, the flow rates of the first flow regulating component 27 and the second flow regulating component 28 can be reduced to decrease the flow rate and velocity of the fluid entering the upper guide cavity 16a. Alternatively, the temperature regulating temperatures set by the first temperature regulating structure 22 and the second temperature regulating structure 23 can be lowered to reduce the temperature of the fluid entering the upper guide cavity 16a, thereby reducing the temperature of the portion of the container body 100 and the precursor corresponding to the upper guide cavity 16a and the second guide channel 12, and vice versa. When the temperature detected by the middle first temperature measuring component 21b is too high, the flow rate of the fluid flowing through the communication hole 151 of the upper partition component 15a can be reduced by the flow rate regulating component 17 corresponding to the communication hole 151 of the upper partition component 15a, thereby reducing the temperature of the portion of the container body 100 and the precursor corresponding to the middle guide cavity 16b, and vice versa. When the temperature detected by the first temperature measuring component 21c is too high, the flow rate of the fluid flowing through the connecting hole 151 of the lower partition component 15b can be reduced by adjusting the flow rate of the fluid through the connecting hole 151 of the lower partition component 15b through the flow rate regulating component 17, thereby reducing the temperature of the portion of the holding body 100 and the precursor corresponding to the lower guide cavity 16c, and vice versa.
[0125] like Figure 1 As shown, this embodiment of the invention also provides a precursor holding device for semiconductor equipment, including a holding body 100 and a temperature control device provided in this embodiment of the invention. The holding body 100 is used to be connected to the process chamber of the semiconductor equipment in a way that can be switched on and off. The temperature control device is configured in conjunction with the holding body 100 and is used to control the temperature of the holding body 100 by controlling the temperature of the fluid through thermal convection.
[0126] The precursor container for semiconductor devices provided in this embodiment of the invention, in conjunction with the temperature control device provided in this embodiment of the invention and the container body 100, can control the temperature of the container body 100 through thermal convection by controlling the temperature of the fluid, thereby improving the ability to control the temperature of the precursor and improving the production efficiency of semiconductor processes.
[0127] Optionally, the container 100 may include a steel cylinder.
[0128] Optionally, the precursor may include pentapentan(dimethylamino)tantalum (PDMAT). Pentapentan(dimethylamino)tantalum can be used in atomic layer deposition processes to prepare tantalum nitride (TaN) thin films.
[0129] In summary, the temperature control device and precursor container for semiconductor equipment provided in the embodiments of the present invention can improve the ability to control the temperature of the precursor and improve the production efficiency of semiconductor processes.
[0130] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.
Claims
1. A temperature control device for controlling the temperature of a precursor container, characterized in that, It includes a first flow guiding body and a second flow guiding body. The first flow guiding body is used to form a first flow guiding channel with the outer peripheral wall of the holding body, and the second flow guiding body is used to form a second flow guiding channel with the outer side of the bottom wall of the holding body. The temperature control device further includes a first temperature regulating structure and a second temperature regulating structure corresponding to the first flow guiding body and the second flow guiding body, wherein the first temperature regulating structure is used to control the temperature of the fluid flowing into the first flow guiding channel, and the second temperature regulating structure is used to control the temperature of the fluid flowing into the second flow guiding channel.
2. The temperature control device according to claim 1, characterized in that, The temperature control device further includes at least one dividing component, which is provided with a connecting hole. The dividing component is disposed in the first flow channel and is used to divide the first flow channel into multiple interconnected flow cavities along the axial direction of the precursor holding body.
3. The temperature control device according to claim 2, characterized in that, The temperature control device further includes multiple flow guiding components, which are arranged one-to-one in multiple flow guiding cavities. The flow guiding components in two adjacent flow guiding cavities are arranged opposite each other in the radial direction of the first flow guiding channel. Each flow guiding component has a flow guiding inlet and a discharge hole. The flow guiding inlet of the flow guiding component in the uppermost flow guiding cavity serves as the fluid inlet of the first flow guiding channel. The flow guiding inlets of the other flow guiding components are connected to the communication hole. The discharge hole is used to discharge the fluid flowing in through the flow guiding inlet into the corresponding flow guiding cavity.
4. The temperature control device according to claim 2, characterized in that, The temperature control device also includes flow rate regulating components. The number of flow rate regulating components is the same as the number of the connecting holes and they are arranged in a one-to-one correspondence. The flow rate regulating components are used to regulate the flow rate of the fluid flowing through the corresponding connecting hole.
5. The temperature control device according to claim 4, characterized in that, The flow rate regulating component includes interconnected regulating plates. The regulating plates penetrate the first flow guiding body and are inserted into the flow guiding cavity, covering the corresponding connecting hole and moving radially along the corresponding connecting hole to adjust the opening degree of the corresponding connecting hole.
6. The temperature control device according to claim 1, characterized in that, The temperature control device further includes a first pipeline, a second pipeline, and a heat insulation component. The first temperature regulating structure is connected to the fluid inlet of the first flow channel through the first pipeline, and the second temperature regulating structure is connected to the fluid inlet of the second flow channel through the second pipeline. At least one of the first pipeline and the second pipeline is covered with the heat insulation component.
7. The temperature control device according to claim 1, characterized in that, The temperature control device further includes a storage component, a manifold, and an output pipe. The storage component is connected to the fluid outlet of the first flow channel and the fluid outlet of the second flow channel through the manifold, respectively, for storing the fluid flowing out through the first flow channel and the second flow channel. The storage component is connected to the first temperature regulating structure and the second temperature regulating structure through the output pipe, respectively, for supplying the stored fluid to the first temperature regulating structure and the second temperature regulating structure through the output pipe.
8. The temperature control device according to claim 7, characterized in that, The temperature control device also includes a suction component, which is disposed on the manifold and is used to suction the fluid in the first flow channel and the second flow channel.
9. The temperature control device according to claim 7, characterized in that, The temperature control device also includes a flow regulating component, which is disposed on the output pipeline and is used to regulate the flow rate of the fluid flowing through the output pipeline.
10. The temperature control device according to claim 1, characterized in that, The temperature control device further includes a plurality of first temperature measuring components. At least one of the plurality of first temperature measuring components is configured to cooperate with the outer side of the bottom wall of the container body to detect the temperature of the bottom of the container body. One or more of the plurality of first temperature measuring components are configured to cooperate with the outer peripheral wall of the container body. One first temperature measuring component is configured to cooperate with the outer peripheral wall of the container body to detect the temperature of the container body. Alternatively, the plurality of first temperature measuring components are configured to cooperate with the outer peripheral wall of the container body at intervals along the axial direction to detect the temperature at multiple positions along the axial direction of the container body.
11. The temperature control device according to claim 1, characterized in that, At least one of the first flow guiding body and the second flow guiding body includes a heat insulation layer and a flame retardant layer, and the heat insulation layer and the flame retardant layer are stacked in the direction of the first flow guiding body from the direction of proximity to the first flow guiding channel to the direction of distance from the first flow guiding channel; And / or, The thermal insulation layer and the flame retardant layer are stacked in the direction from near the second flow channel to away from the second flow channel of the second flow guide body.
12. A precursor container for semiconductor devices, characterized in that, The device includes a container and a temperature control device as described in any one of claims 1-11. The container is configured to be in continuous communication with the process chamber of a semiconductor device. The temperature control device is configured to cooperate with the container and is used to control the temperature of the container by controlling the temperature of the fluid through thermal convection.