Semiconductor device
By introducing an insulating structure (IST) to surround the landing pads and conductive structures in semiconductor devices, the problem of deteriorated electrical characteristics under high integration density is solved, achieving higher electrical characteristics and production yield.
CN120857486APending Publication Date: 2025-10-28SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Application Number
- CN202411831460.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-04-25
- Filing Date
- 2024-12-12
- Publication Date
- 2025-10-28
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Figure CN120857486A_ABST
Abstract
A semiconductor device may include a substrate including a cell region and a peripheral region; an active pattern on the cell region of the substrate; a gate structure on the active pattern and extending in a first direction; a bit line structure electrically connected to the active pattern and extending in a second direction intersecting the first direction; a node contact electrically connected to the active pattern; a landing pad electrically connected to the node contact; a conductive structure on the peripheral region; a partition structure surrounding the landing pad, the partition structure including a first partition pattern on the bit line structure and a second partition pattern between the landing pad and the conductive structure; and an insulating structure on the second separation pattern.
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