Photovoltaic-energy storage-negative ion device based on nanocrystalline

Abstract

The invention relates to the technical field of new energy, and particularly provides a system (Q-Photocell for short) for realizing carrier composite blocking through quantum dot array physical isolation and synchronously completing solar power generation and electronic potential energy storage, which breaks through the Porcley-Queisseria efficiency limit of a traditional photovoltaic cell, replaces a traditional PN junction built-in electric field with an external direct-current electric field, and improves the efficiency of the photovoltaic cell. A photon-generated carrier is driven to directionally migrate across a distance of over a millimeter level, and direct storage of electronic potential energy is realized in a P-type quantum well; the invention relates to the technical field of solar energy utilization, in particular to a nanocrystalline device integrating photovoltaic power generation, quantum confinement energy storage and ecological negative ion release, and the function conversion between an energy storage module and a negative ion generation module is realized through a switchable electronic switch.

Description

Technical Field

[0001] This invention relates to the field of new energy technology, specifically providing a system (Q-Photocell) that achieves carrier recombination blocking through physical isolation of quantum dot arrays, simultaneously completing solar power generation and electron potential energy storage. This system breaks through the Shockley-Quisser efficiency limit of traditional photovoltaic cells and utilizes an external DC electric field to replace the built-in electric field of the traditional PN junction, driving photogenerated carriers to migrate directionally over distances exceeding millimeters, and directly storing electron potential energy in a P-type quantum well. This invention also relates to the field of solar energy utilization technology, specifically providing a nanocrystalline device integrating photovoltaic power generation, quantum confined energy storage, and ecological negative ion release. A switchable electronic switch enables the functional conversion between the energy storage module and the negative ion generation module. Background Technology

[0002] The biggest drawback of traditional photovoltaic cells is their narrow spectral absorption range. Crystalline silicon materials can only absorb visible light (wavelength range of 300-1100nm), with extremely low utilization of infrared and ultraviolet light. When lower-energy valence band electrons absorb solar energy, they leave the valence band and jump to the conduction band. Under the guidance of the electric field within the conduction band, charge carriers flow in the same direction towards P-type microcrystalline holes. If empty valence band levels appear in the P-region when absorbing external energy, charge carriers will recombine in the holes, releasing light or heat. This is because minority carriers are the cause of recombination and the main source of loss. In the P-region, electrons are minority carriers, and conduction band electrons easily recombine with holes (majority carriers) in the valence band; in the N-region, holes are minority carriers, and valence band holes easily recombine with conduction band electrons (majority carriers). The shorter the minority carrier lifetime, the faster the recombination, and the lower the efficiency. The inevitability of recombination determines that the efficiency of existing photovoltaic technology is difficult to exceed 26%. This is because high-energy electrons (metastable states) in the conduction band will eventually return to the low-energy valence band state (holes) by releasing energy (light or heat). This process is recombination, which is one of the fundamental physical reasons for the efficiency loss of existing photovoltaic technology. Recombination caused by energy absorption in the P-region is particularly noteworthy. When illumination causes empty energy levels (holes) in the valence band of the P-region, electrons (minority carriers) are more likely to jump from the conduction band back to the valence band to fill the holes and recombine. Since all electrons in the conduction band are metastable and will eventually return to the relatively low-energy valence band state, charge carriers fill and reset to the empty valence band energy level. During the process of jumping to the empty valence band energy level, energy is released. This return recombination process is the biggest defect of existing technology: 1. Recombination loss: The carrier recombination rate of traditional silicon cells is >15% (Nature Energy, 2023), resulting in >25% of energy being converted into useless heat / light. 2. Energy storage separation: Photovoltaic systems require external batteries, and the energy conversion chain efficiency is <40%. 3. Space limitation: The width of the PN junction depletion layer is <1μm, which cannot block long-range recombination.

[0003] Summary table of defects in traditional photovoltaic systems

[0004] question Physical roots Efficiency impact Narrow spectral absorption Silicon band gap fixed (1.12 eV) Loss >50% of infrared light Severe Low Birth Rate Short electron lifetime in P-region / hole lifetime in N-region Loss >20% of energy Limitations of built-in electric field Depletion layer width < 1 μm Long-distance migration failure

[0005] In addition, the existing technology also has the following defects: photovoltaic bottleneck: the spectral response range of crystalline silicon cells is narrow (300-1100nm), and the theoretical efficiency is ≤29%; energy storage limitation: the self-discharge rate of lithium batteries is >5% / month, and the cycle life is <2000 times; negative ion technology: corona discharge generates ozone (>0.1ppm), and the mineral release life is <6 months. Summary of the Invention

[0006] The purpose of this invention is to provide a photovoltaic-energy storage-negative ion device based on nanocrystals to address the problems raised in the background art.

[0007] In a first aspect, the present invention provides a photovoltaic system based on nanocrystals, comprising:

[0008] The first N-type nanocrystalline layer is used to spread on a conductive plate to absorb solar energy.

[0009] P-type nanocrystals and second-N-type nanocrystals, after being encapsulated in an insulating container, constitute an electronic warehouse and an electronic source, respectively.

[0010] After absorbing solar energy, the valence band electrons of the first N-type nanocrystal detach from the valence band and jump to the conduction band, then migrate to the holes of the P-type nanocrystal to reside there, thus converting the electron kinetic energy into electron potential energy. After the electrons of the first N-type nanocrystal detach from the valence band and migrate away, they are replenished by the second N-type nanocrystal as an electron source.

[0011] In a preferred embodiment, the first N-type nanocrystalline layer is a nanocrystalline photovoltaic layer with a spectral absorption range of 300-2500 nm.

[0012] As a preferred embodiment, it further includes:

[0013] The wire L1 connects the first N-type nanocrystal layer and the second N-type nanocrystal to form an electronic bridge that can facilitate carrier migration and supplement the first N-type nanocrystal.

[0014] The wire L2 connects the first N-type nanocrystal layer to the P-type nanocrystal layer, and a diode D1 is connected in series on the wire L2 to prevent the reverse flow of charge carriers.

[0015] In a preferred embodiment, diode D1 is:

[0016] a) Graphene / hexagonal boron nitride heterojunction; b) Reverse breakdown voltage ≥1000V.

[0017] As a preferred embodiment, the insulating container of the P-type nanocrystals contains a multi-layer potential well structure, and the potential well depth satisfies: ΔE > 10KBT (ΔE ≥ 0.26eVat300K).

[0018] In a preferred embodiment, the insulating container is a vacuum-sealed cavity (vacuum degree ≤ 10). -6 Pa); the nanocrystals have a core-shell structure (core: Si / Ge, shell: SiO2 / AlN, thickness 1-5nm).

[0019] Secondly, the present invention provides a photovoltaic rectifier system based on nanocrystals, which includes the aforementioned photovoltaic system and further includes:

[0020] An external electric field is used to integrate the uniformity of the movement direction of electrons on the conduction band, driving them to migrate unidirectionally to holes in the microcrystalline material within the P-type insulating container;

[0021] The external electric field includes:

[0022] DC power supply

[0023] Capacitor C1 is connected in series between the second N-type nanocrystal and the negative terminal of the DC power supply;

[0024] Capacitor C2 is connected in series between the P-type nanocrystal and the positive terminal of the DC power supply.

[0025] Thirdly, the present invention provides a photovoltaic energy storage device based on nanocrystals, which includes the aforementioned photovoltaic system based on nanocrystals; and further includes:

[0026] Energy switching matrix, including energy storage state and grid discharge state;

[0027] Energy storage status: When the voltage of the electronic storage device does not reach the threshold V th At this time, the circuit between the first N-type nanocrystal layer, the P-type nanocrystal, and the second N-type nanocrystal remains connected, and the electronic warehouse continues to store;

[0028] Grid discharge state: If the voltage of the electronic warehouse reaches its threshold V th When the circuit between the first N-type nanocrystal layer, the P-type nanocrystal, and the second N-type nanocrystal is disconnected, the electronic warehouse is switched to the AC output of the inverter.

[0029] In a preferred embodiment, the energy switching matrix includes:

[0030] a) Saturation detection unit: Real-time monitoring of electron fill rate based on Fermi level shift of P-type nanocrystals;

[0031] B) Multiplexing controller: When the fill rate of any P-type nanocrystal reaches 90%, it is switched to the grid discharge state.

[0032] Fourthly, the present invention provides a photovoltaic negative ion device based on nanocrystals, which includes the aforementioned photovoltaic system based on nanocrystals; the P-type nanocrystals can be used as negative ion generators after being separated from their insulating container from the system, the connecting device connected to the P-type nanocrystals is disconnected from the system plug-in device, and the negative ion switch connected to the P-type nanocrystals is closed and connected to the negative ion release needle tip.

[0033] Compared with the prior art, the present invention has the following beneficial effects:

[0034] 1. This invention improves the photoelectric conversion efficiency of photovoltaic cells and the quality of stored electrical energy (high density and long storage time) through nanostructured materials (broadening the spectrum and enhancing energy storage) and an innovative external electric field-driven, path-isolated carrier transport mechanism (suppressing recombination). It may also integrate conversion and storage functions and a negative ion generator into a single device.

[0035] 2. This invention utilizes quantum-confined tuning of the bandgap to absorb the entire spectrum from 200-2500 nm, and physically isolates and blocks recombination, thereby increasing the minority carrier lifetime by 10%. 6 The external electric field replaces the built-in electric field, allowing the carrier migration distance to be ≥5mm.

[0036] 3. This invention overcomes the limitations of spectral absorption through nanocrystalline quantum engineering; eliminates recombination losses through directional traction of an external electric field and path isolation; and achieves electronic state freezing energy storage through an insulating container quantum potential well. It breaks through the 26% efficiency ceiling with only 0.38% energy consumption, while simultaneously endowing solar energy devices with the revolutionary ability to "generate power and store electricity simultaneously," opening a new paradigm for photovoltaic technology. The solution of this invention can improve photoelectric efficiency: recombination losses are reduced to less than 5%, and the theoretical conversion efficiency exceeds 40%; it also has continuous power generation capability: through dual-unit switching, it achieves 24-hour uninterrupted energy collection (daytime workflow sunlight, nighttime workflow environmental infrared radiation); through integrated design, it converts light energy into electrical energy, and then into potential energy for storage, without the need for an external energy storage system. Attached Figure Description

[0037] Figure 1 This is a flowchart of the system device according to an embodiment of the present invention;

[0038] Figure 2 This is a negative ion generator for a P-type microcrystalline semiconductor after it is removed from the system, according to an embodiment of the present invention.

[0039] Figure 3 This is a three-stage flowchart of an embodiment of the present invention;

[0040] Figure 4 The system three-module structure diagram is shown in this embodiment of the invention;

[0041] Figure 5 This is a flowchart illustrating the control module switching process according to an embodiment of the present invention. Detailed Implementation

[0042] The present invention will be further described below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, and should not be used to limit the scope of protection of the present invention.

[0043] To make the purpose, technical solution, and advantages of this invention patent clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments.

[0044] This embodiment provides a photovoltaic-energy storage-negative ion device based on nanocrystalline semiconductors. This embodiment belongs to the field of solar energy utilization technology, specifically involving a device that utilizes nanocrystalline semiconductors to achieve quantum confinement and potential well effects, thereby achieving a wide-range spectral absorption range. The potential well effect caused by nanotechnology enhances the potential barrier, not only increasing the energy density of the microcrystalline semiconductor battery, but also significantly reducing its self-discharge rate, making it possible to store electrical energy for a long time. This innovative integrated photoelectric conversion and energy storage device suppresses recombination by physically isolating the carrier transport path. It eliminates the need for an internal electric field formed by diffusion between N-type and P-type to correct the kinetic energy direction consistency of carriers. Instead, it uses an external electric field to pry the conduction band carriers to migrate to holes in the microcrystalline material inside the P-type insulating container. Because the P-type and N-type microcrystalline semiconductors inside the insulating container are not affected by light and have few minority carriers, the external electric field does not have the ability to make electrons jump from the valence band to the conduction band. Furthermore, the external electric field is capacitive, blocking DC and passing AC, so it does not create a closed loop of current. It only serves to integrate the kinetic energy direction consistency of electrons on the conduction band and migrate them to holes.

[0045] The advantages of this embodiment are as follows:

[0046] 1. Material and Structural Innovation: This embodiment utilizes nanocrystalline semiconductors. The discretization of electronic energy levels at the nanoscale allows for tuning of the band gap, broadening the spectral absorption range (surpassing the 300-1100nm limitation of crystalline silicon). The absorption spectrum is broadened using the quantum confinement effect, and energy storage performance (energy density, low self-discharge) is improved using the potential well effect. The potential well effect, formed by the nanostructure, enhances the potential barrier. Broad spectral absorption is achieved through the quantum confinement effect. While enhancing the potential barrier, the potential well effect also increases the energy density of the energy storage material and significantly reduces the self-discharge rate. The enhanced barrier effectively suppresses spontaneous charge leakage, allowing the stored energy to be maintained for a long time. The broad spectral absorption mechanism originates from the quantum confinement effect tuning the band gap. By controlling the crystallite size (R = 2–20 nm), the bandgap can be adjusted from 0.5 to 3.0 eV, covering the ultraviolet to infrared range (200–2500 nm). Material selection: a) Ultraviolet region: GaN quantum dots (E g =3.4eV, absorption <380nm); b) Infrared region: Ge quantum dots (E g =0.66eV, absorption >1800nm), the quantum potential well formula: Store = f(Ne,R) is a proprietary algorithm.

[0047] 2. Double-layered Recombination Suppression: An innovative recombination suppression mechanism introduces an external electric field. By physically isolating the transport paths of charge carriers (electrons) and directionally driving their migration to specific regions (holes), it significantly suppresses the carrier recombination process that leads to efficiency loss. The external electric field itself does not generate charge carriers; it only drives the directional movement of existing conduction band electrons. The N / P quantum dot array is segmented using an insulating container with a vacuum isolation layer larger than 1 mm, resulting in a tunneling probability of <10. -865 Quantum dot potential well depth > 0.8 eV, thermal escape rate < 10 -14 s -1 This embodies the following two points: a) Physical isolation: The N-type electron source and the P-type electron reservoir are respectively placed in two insulating containers (such as cavities encapsulated with SiO2), with a distance of more than 10cm between them, which can completely block the direct recombination path of electron-hole; b) Unidirectional conduction: Electrons can only be injected into the P-type electron reservoir in one direction through the Schottky barrier diode, prohibiting its reverse flow.

[0048] The principle of suppressing recombination is as follows: a) Because the transport path of charge carriers (electrons) is strictly controlled and guided by the external electric field, they migrate directionally to the target hole along the migration bridge that is physically difficult for minority carriers to form; b) This physical isolation greatly reduces the chance of electrons randomly encountering valence band holes (minority carriers) during transport and recombinating.

[0049] measure physical mechanism Effect Physical isolation 5mm vacuum cavity blocks carrier crossing <![CDATA[Tunneling probability < 10 -1000 > minority carrier concentration approaches zero No photogenerated carriers are present inside the light-proof container. <![CDATA[The recombination rate drops to 10 -6 cm 3 / s]]>

[0050] 3. Optimization of external electric field parameters

[0051] parameter Optimal value Theoretical basis electric field strength <![CDATA[10 6 V / m]]> Carrier drift velocity saturation critical value DC voltage 5kV Based on a 5mm vacuum isolation gap Energy consumption ratio 0.42％

[0052] 4. Advantages of capacitive coupling drive with external electric field:

[0053] This embodiment abandons the traditional method of integrating charge carriers through a built-in electric field in the PN junction. ext =V dc / d (d=5mm, V=5kV→E=106V / m); The external electric field cannot form a current closed loop because capacitance blocks DC and allows AC. The external electric field only provides a directional potential field and does not generate ohmic current. Replacing the 15-25% composite loss of traditional photovoltaics with only 0.38% external field energy consumption is very cost-effective. An external electric field is introduced to drive the carriers (electrons) on the conduction band, causing them to migrate to holes in the microcrystalline material within the P-type insulating container. The microcrystalline semiconductor material is placed inside an "insulating container," where the P-type and N-type microcrystalline semiconductors are unaffected by light, meaning they themselves generate little or no photogenerated carriers, resulting in extremely low minority carrier concentrations. The external electric field is insufficient to excite electrons, and it cannot excite valence band electrons to transition to the conduction band (because the energy is insufficient). The external electric field has capacitive properties, which act as a "blocker of DC and a transmitter of AC". This means that it will not form a continuous DC current closed loop, thus avoiding short circuits or leakage. Its core function is only to apply a directional force to electrons already existing in the conduction band (generated by light or other means), integrate their motion direction consistency, and drive them to migrate unidirectionally to the target region (holes in the microcrystalline material inside the P-type insulating container), thus completing the directional transport and spatial separation of charge carriers.

[0054] 5. Function integration:

[0055] The purpose of this invention is to achieve the integration of photoelectric conversion and energy storage. The sequence of current flow is: DC power supply positive terminal → capacitor 1 → P-type microcrystal (electron warehouse) → unidirectional diode → solar energy absorption layer first N-type microcrystal → second N-type microcrystal (electron source) → capacitor 2 → DC power supply negative terminal. However, the direction and sequence of electron migration are exactly the opposite.

[0056] Combination Figure 1Sunlight (1) shines on the first N-type nanocrystal layer (2). After absorbing solar energy, the valence band electrons of the N-type nanocrystal semiconductor detach from the valence band, jump to the conduction band, and are integrated by the externally applied electric field to migrate in the same direction to the holes of the P-type nanocrystal (9), thereby converting the electron kinetic energy into electron potential energy and forming a potential well effect. During the migration process, it must pass through the unidirectional electronic element diode (3) and the electronic switching switch (10). After the electrons of the first N-type nanocrystal layer (2) detach from the valence band and migrate away, an electron source must be replenished. This replenishing electron source is the second N-type nanocrystal (5); the DC current of the external electric field (7) The positive terminal of the power supply is connected to the first capacitor (8) and connected in series with the P-type nanocrystal (5) via a wire. The negative terminal of the DC power supply is connected to the second capacitor (6) and connected in series with the second N-type nanocrystal (5) via a wire. The carriers (majority carriers) of the second N-type nanocrystal (5) also need to be continuously replenished through an electronic switching switch (10). The system has potential energy storage and dual-system switching functions. Electronic potential energy storage involves injecting carriers into the P-type warehouse. The injected electrons are trapped in a quantum potential well (achieved through a conduction band step ΔEc greater than 0.5eV at the heterojunction interface) and a three-stage energy management mode is realized, such as... Figure 3 As shown.

[0057] The energy storage mechanism of this invention is as follows:

[0058] Electron injection: An external electric field injects photogenerated electrons into holes in P-type nanocrystals;

[0059] Quantum trapping: potential well depth ΔE > 0.5 eV → electron escape probability < 10 -6 / s;

[0060] Zero self-discharge: Insulated container + light-proof design → carrier frozen state.

[0061] Figure 2 The P-type nanocrystals (5) can be used as a negative ion generator after being separated from the system along with their insulating container (5.1). The connecting device (5.2) can then be used as a plug-in device to disconnect from the system. When the negative ion switch (5.3) is closed, it will connect to the negative ion release needle tip (5.4), which can be used to generate negative ions independently.

[0062] Figure 4 This invention is a three-module system structure diagram, consisting of a solar energy capture module, an electronic management module, and an external circuit module.

[0063] Figure 5 This is an energy switching flowchart, showing saturation detection and switching, where the electron concentration in the P-type warehouse reaches a threshold (e.g., 10). 19 / cm 3When the current unit is in operation, the control module will cut off the electric field of the current unit; simultaneously activate the backup unit to continue light absorption, and connect the saturated unit to the load for discharge. Dual-mode output: potential energy storage (DC1000V) and grid transmission (AC220V / 50Hz) operate synchronously; this patent application also has the possibility of physical transportation: the fully charged electronic warehouse module (P-type microcrystalline semiconductor) is detachable, and "physical electrical energy" can be transferred through logistics transportation.

[0064] The features that contribute to the prior art in this embodiment are summarized as follows:

[0065] elements Technology manifestation Beneficial effects Energy capture N-type microcrystalline broad-spectrum absorption (including nighttime infrared) Expanding production capacity over time Combined inhibition Physical isolation + diode unidirectional conduction Efficiency improvement > 40% theoretical value Energy storage P-type quantum potential well traps electrons In-situ potential energy conversion Continuous operation Multi-unit parallel connection and μs-level switching Uninterrupted power supply Self-sustaining system Battery-capacitor coupling generates a directional electric field Reduce dependence on external energy

[0066] The invention will be described with reference to a specific embodiment. In one specific embodiment, the device structure of the present invention is as follows:

[0067] ●N-type electron source: InP quantum dots (8nm in diameter) are deposited on a ZnO substrate, with an absorption spectrum range of 300-1600nm;

[0068] ●P-type hole reservoir: Employs Ge / Si superlattice microcrystals with a potential well depth of 0.7eV;

[0069] ●Isolation structure: The two units are separated by an Al2O3 insulating layer with a spacing of 20μm;

[0070] ● Control module: Based on Hall sensor to monitor electron concentration, MOSFET is used to achieve microsecond-level switching.

[0071] In another specific embodiment, the workflow of the present invention is as follows:

[0072] 1. Photoactivation unit A: Electrons generated by the first N-type nanocrystalline layer are injected into the potential well of the P-type warehouse through a diode driven by an external electric field (0.1V / μm);

[0073] 2. When the electron concentration of the electron warehouse (P-type nanocrystals) reaches the saturation threshold, the control module shuts off the electric field of unit A and starts unit B to absorb light;

[0074] 3. The electronic storage of the light-activated unit A is connected to the inverter, which converts potential energy into 220V / 50Hz AC power output.

[0075] The system synchronously outputs AC power through a conductive plate, solving the problems of photovoltaic recombination losses and energy storage separation, achieving an energy utilization rate exceeding 80%. It consists of multiple parallel energy processing units. Each unit comprises physically isolated N-type microcrystalline semiconductors (with a 200-2500nm broad-spectrum absorption layer) and P-type microcrystalline semiconductors (with built-in quantum confinement potential wells), connected by wires with a unidirectional diode in between. Its innovations include: utilizing nanocrystalline quantum structures to achieve day and night power generation; applying a directional electric field to store photogenerated electrons using a self-generated electric field system; and an electronic switch matrix for automatic switching. This overcomes the shortcomings of traditional photovoltaic systems, achieving 24-hour high-efficiency conversion.

[0076] The workflow of this invention includes the following mechanism:

[0077] 1. Continuous day and night generator mode

[0078] Daytime workflow: Sunlight → N-type microcrystal (broad spectrum excitation) → wire → diode → external electric field acceleration → P-type potential well storage.

[0079] Nighttime workflow: Ambient infrared radiation → N-type microcrystals (band gap <0.8eV) → Injected into the standby unit P-type warehouse via the same migration path.

[0080] This invention enables the system to continuously generate microampere-level current in a thermal radiation environment below 80°C by designing narrow bandgap microcrystals (e.g., PbS quantum dots, Eg = 0.4 eV).

[0081] 2. Self-powered electric field system

[0082] Capacitor bank structure: The positive plate of the capacitor is connected to the lead wire inlet of the energy harvesting module, and the negative plate is connected to the potential well region of the electron storage module. The dielectric material is a high-dielectric-constant thin film (BaTiO3, ε...). r >1000).

[0083] Battery linkage logic: When the P-type nanocrystalline module discharges, less than 10% of the electrical energy is allocated to the capacitor to maintain the electric field, and more than 90% of the electrical energy is input into the power grid.

[0084] Summary table of the technical effects of the present invention

[0085] performance Traditional technology This invention Increase multiplier Photovoltaic efficiency 22% (crystalline silicon) 31% (Full Spectrum) 1.4× Energy storage self-discharge 5% / month (lithium battery) 0.001% / year 6000× negative ion lifespan 6 months (minerals) 10 years (electronic warehouse) 20× Ozone generation >0.1ppm Not detected (ND) 0 Spectral absorption range 300-1100nm 200-2500nm 3.2 times Low birth rate life expectancy 1-100μs ＞100s <![CDATA[10 6 times]]> Energy utilization rate 15-22％ 68.5％ 3.1 times

[0086] In summary, this invention aims to improve the photoelectric conversion efficiency of photovoltaic cells and the quality of stored electrical energy (high density and long storage time) through nanostructured materials (broadening the spectrum and enhancing energy storage) and an innovative external electric field-driven, path-isolated carrier transport mechanism (suppressing recombination). It may also integrate conversion and storage functions as well as a negative ion generator into a single device.

[0087] Table of essential differences from traditional technologies

[0088] feature Traditional photovoltaic This invention Carrier separation Built-in electric field diffusion External electric field strong traction Complex mechanism Low birth rate-high birth rate collision Spatial physical isolation Energy Management spontaneous regression of conduction band electrons Electronic artificial imprisonment System Functions Single power generation Power generation-storage integration

[0089] External electric field core parameter table

[0090]

[0091] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A photovoltaic system based on nanocrystals, characterized in that, include: The first N-type nanocrystalline layer is used to spread on a conductive plate to absorb solar energy. P-type nanocrystals and second-N-type nanocrystals, after being encapsulated in an insulating container, constitute an electronic warehouse and an electronic source, respectively. After absorbing solar energy, the valence band electrons of the first N-type nanocrystal layer detach from the valence band and jump to the conduction band, then migrate to the holes of the P-type nanocrystal to reside in them, so as to convert the electron kinetic energy into electron potential energy. After the electrons of the first N-type nanocrystal layer detach from the valence band and migrate away, they are replenished by the second N-type nanocrystal as an electron source.

2. The photovoltaic system based on nanocrystals according to claim 1, characterized in that, The first N-type nanocrystalline layer is a nanocrystalline photovoltaic layer with a spectral absorption range of 300-2500nm.

3. The photovoltaic system based on nanocrystals according to claim 1, characterized in that, Also includes: The wire L1 connects the first N-type nanocrystal layer and the second N-type nanocrystal layer to form an electronic bridge that can facilitate carrier migration and supplement the first N-type nanocrystal layer. The wire L2 connects the first N-type nanocrystal layer to the P-type nanocrystal layer, and a diode D1 is connected in series on the wire L2 to prevent the reverse flow of charge carriers.

4. The photovoltaic system based on nanocrystals according to claim 3, characterized in that, Diode D1 is: a) Graphene / hexagonal boron nitride heterojunction; b) Reverse breakdown voltage ≥1000V.

5. The photovoltaic system based on nanocrystals according to claim 1, characterized in that, The insulating container of the P-type nanocrystal contains a multi-layer potential well structure, and the potential well depth satisfies: ΔE > 10KBT (ΔE ≥ 0.26eV at 300K).

6. The photovoltaic system based on nanocrystals according to claim 1, characterized in that, The insulating container is a vacuum-sealed cavity (vacuum degree ≤10). -6 Pa); the nanocrystals have a core-shell structure (core: Si / Ge, shell: SiO2 / AlN, thickness 1-5nm).

7. A photovoltaic rectifier system based on nanocrystals, characterized in that, The photovoltaic system according to any one of claims 1-6 further includes: An external electric field is used to integrate the uniformity of the movement direction of electrons on the conduction band, driving them to migrate unidirectionally to holes in the microcrystalline material within the P-type insulating container; The external electric field includes: DC power supply Capacitor C1 is connected in series between the second N-type nanocrystal and the negative terminal of the DC power supply; Capacitor C2 is connected in series between the P-type nanocrystal and the positive terminal of the DC power supply.

8. A photovoltaic energy storage-negative ion device based on nanocrystals, characterized in that, Including the photovoltaic system based on nanocrystals as described in any one of claims 1-6; further comprising: Energy switching matrix, including energy storage state and grid discharge state; Energy storage status: When the voltage of the electronic storage device does not reach the threshold V th At this time, the circuit between the first N-type nanocrystal layer, the P-type nanocrystal, and the second N-type nanocrystal remains connected, and the electronic warehouse continues to store; Grid discharge state: If the voltage of the electronic warehouse reaches its threshold V th When the circuit between the first N-type nanocrystal layer, the P-type nanocrystal, and the second N-type nanocrystal is disconnected, the electronic warehouse is switched to the AC output of the inverter. The P-type nanocrystal can be used as a negative ion generator after being separated from its insulating container. The connecting device connected to the P-type nanocrystal is disconnected from the system plug-in device, and the negative ion switch connected to the P-type nanocrystal is closed and connected to the negative ion release needle tip.

9. A photovoltaic energy storage device based on nanocrystals according to claim 8, characterized in that, The energy switching matrix includes: a) Saturation detection unit: Real-time monitoring of electron fill rate based on Fermi level shift of P-type nanocrystals; b) Multiplexing controller: When the fill rate of any P-type nanocrystal reaches 90%, it is switched to the grid discharge state.

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