Method for evaluating measurement accuracy based on aoi system, defect standard wafer, device and medium

By designing defect standard pieces and accuracy evaluation methods, the problem of measurement accuracy evaluation in AOI systems when detecting LED chip misalignment defects was solved, realizing accurate evaluation of AOI system measurement accuracy, ensuring the reliability and consistency of detection results, and improving the stability and effectiveness of measurement accuracy.

CN120870152BActive Publication Date: 2026-01-13深圳市壹倍科技有限公司
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Patent Information

Application Number
CN202511397494.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-09-28
Publication Date
2026-01-13
Estimated Expiration
2045-09-28

AI Technical Summary

Technical Problem

Existing AOI systems lack unified quality control standards when detecting misalignment defects in LED chips, making it impossible to accurately assess measurement precision. This results in unreliable test results, affecting the quality and yield of LED chip manufacturing.

Method used

A defect standard sheet is designed, comprising a high-hardness quartz glass substrate and a light-shielding layer with alternating deposition of Cr material layer and AlN transition layer. Multiple rectangular array units are formed by etching to obtain the measurement deviation results of the AOI system. The deviation mapping map and deviation distribution histogram are used to evaluate the accuracy, determine the distribution conditions of Gaussian peaks, and ensure that the measurement accuracy meets the requirements.

Benefits of technology

It enables precise evaluation of the measurement accuracy of the AOI system, ensuring the reliability and consistency of the detection results, filling the gap in the detection accuracy of array target misalignment defects in the new display industry, and improving the stability and effectiveness of measurement accuracy.

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Abstract

The present application relates to the technical field of semiconductor defect detection, and particularly relates to a measurement accuracy evaluation method based on an AOI system, a defect standard wafer, equipment and a medium, measurement offset results obtained by acquiring a defect standard wafer detected by an AOI system, wherein the measurement offset results include an offset mapping diagram and an offset distribution histogram, the defect standard wafer includes a plurality of rectangular array units arranged according to a preset rule, and each rectangular array unit contains at least one preset position defect, the measured offset data in the offset mapping diagram is compared with preset target offset data to obtain a comparison result, and it is judged whether different offset amounts in the offset distribution histogram correspond to Gaussian peaks that satisfy a preset distribution condition to obtain a judgment result, and according to the comparison result and the judgment result, a precision evaluation result is determined, so that the measurement accuracy of the AOI system can be accurately evaluated to fill the blank of array target offset defect detection accuracy standards in the new display industry.
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Citation Information

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