A gallium oxide semiconductor device test data analysis system

Abstract

The application discloses a gallium oxide semiconductor device test data analysis system and relates to the semiconductor field, and solves the problem that the existing semiconductor device test data analysis system has poor analysis effect, and comprises the following modules: an electrical index module: multiple electrical index tests are performed on sample semiconductor devices in an electrical index test period, and a periodical electrical index sorting queue is obtained according to test results; an optoelectrical index module: multiple optoelectrical index tests are performed on sample semiconductor devices in an optoelectrical index test period, and a periodical optoelectrical index sorting queue is obtained according to test results; and a test analysis module: test data analysis is performed on the sample semiconductor devices according to the periodical electrical index sorting queue and the periodical optoelectrical index sorting queue, and analysis results are fed back, and the application can improve the accuracy and comprehensiveness of test data analysis results.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor testing technology, specifically, it relates to a gallium oxide semiconductor device test data analysis system. Background Technology

[0002] In the field of semiconductor technology, gallium oxide semiconductor devices have attracted widespread attention in recent years due to their excellent performance characteristics. However, existing testing systems have significant technical shortcomings when analyzing test data of gallium oxide semiconductor devices, making it difficult to meet the requirements of comprehensiveness and accuracy.

[0003] Specifically, existing systems are unable to perform comprehensive operational deviation tests on every electrical parameter in gallium oxide semiconductor devices, especially failing to fully consider the impact of ambient temperature changes on electrical parameters during the testing process, resulting in a lack of comprehensiveness in the test results.

[0004] For example, the differences in performance of key electrical indicators such as saturation current under different ambient temperatures have not been effectively captured and analyzed, thus affecting the accurate evaluation of device performance. Furthermore, existing systems are also unable to conduct in-depth operational deviation tests on optoelectronic indicators, particularly in the monitoring of important indicators such as photoresponsivity, where dynamic analysis combined with changes in ambient temperature is not performed, significantly reducing the accuracy of optoelectronic indicator test results. These problems not only limit the reliability of gallium oxide semiconductor device performance evaluation but also hinder its further optimization and promotion in practical applications.

[0005] Therefore, developing a system capable of comprehensively considering environmental temperature changes and performing full deviation testing and analysis of electrical and photoelectric indicators has become a pressing technical challenge. This invention aims to overcome the shortcomings of existing technologies through innovative design and technical means, providing a more comprehensive and accurate solution for the analysis of test data for gallium oxide semiconductor devices. Summary of the Invention

[0006] The purpose of this invention is to provide a gallium oxide semiconductor device test data analysis system, which mainly solves the problems that existing technologies cannot perform comprehensive electrical and optoelectronic index testing and analysis of gallium oxide semiconductor devices, and fail to fully consider the impact of environmental temperature changes on test results, resulting in a lack of comprehensiveness and accuracy in the testing process.

[0007] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0008] A gallium oxide semiconductor device test data analysis system, comprising:

[0009] Electrical Indicators Module: Performs various electrical indicator tests on sample semiconductor devices in the electrical indicator testing cycle, obtains the electrical indicator deviation degree corresponding to each electrical indicator based on the test results, and sorts the obtained electrical indicator deviation degrees to obtain the periodic electrical indicator sorting queue.

[0010] Photoelectric index module: Performs various photoelectric index tests on sample semiconductor devices in the photoelectric index test cycle, obtains the photoelectric index deviation degree corresponding to each photoelectric index based on the test results, and sorts the obtained multiple photoelectric index deviation degrees to obtain the periodic photoelectric index sorting queue.

[0011] Test Analysis Module: Analyzes test data of sample semiconductor devices based on periodic electrical index sorting queues and periodic optoelectronic index sorting queues, and provides feedback on the analysis results.

[0012] Furthermore, in this invention, the specific steps for obtaining the periodic electrical index sorting queue are as follows:

[0013] The gallium oxide semiconductor devices that need to be tested and analyzed are acquired, and a sample semiconductor device is selected from the acquired gallium oxide semiconductor devices.

[0014] During the electrical performance testing of the sample semiconductor devices, several different types of electrical performance indicators were set, and one sample electrical performance indicator was selected from them.

[0015] When the electrical index of the sample is saturation current, the saturation current of the sample semiconductor device is monitored, and the deviation of the sample electrical index is obtained based on the monitoring results.

[0016] The deviation of each electrical indicator is obtained, resulting in multiple electrical indicator deviations. These multiple electrical indicator deviations are then sorted in descending order to obtain a periodic electrical indicator sorting queue.

[0017] Furthermore, in this invention, the specific steps for obtaining the deviation of the sample's electrical indicators are as follows:

[0018] During the process of monitoring the saturation current of the sample semiconductor device, the time value of the power line where the sample semiconductor device is located is marked as the first cycle characteristic time value, the current time value is marked as the second cycle characteristic time value, and the value between the first cycle characteristic time value and the second cycle characteristic time value is marked as the D1 test cycle.

[0019] During the D1 test cycle, several ambient temperatures are set for the environment space where the sample semiconductor is located, and a sample ambient temperature is selected from the set ambient temperatures. The sub-time period when the environment space is at the sample ambient temperature is marked as the sample sub-time period.

[0020] Saturation current monitoring is performed on the sample semiconductor during the sample sub-period, and the saturation current deviation corresponding to the sample sub-period is obtained based on the monitoring results;

[0021] The saturation current deviation for each sub-time period corresponding to each ambient temperature is obtained, and the values ​​of the multiple saturation current deviations are compared. The saturation current deviation with the largest value is marked as the sample electrical index deviation.

[0022] Furthermore, in this invention, the specific steps for obtaining the saturation current deviation are as follows:

[0023] The saturation current value of the sample semiconductor at each time point within the sample sub-period is obtained, and the average of the obtained saturation current values ​​at multiple time points is calculated to obtain the average saturation current value of the period.

[0024] Obtain the reference range of saturation current corresponding to the sample semiconductor, and obtain the average value of the range corresponding to the reference range of saturation current to obtain the median value of the reference range of saturation current.

[0025] The range of the saturated current range is obtained by numerically acquiring the range of the saturated current range corresponding to the reference range of the saturated current.

[0026] The saturation current deviation for each sample sub-period is calculated by taking the saturation current range, the median of the saturation current baseline range, and the average saturation current value for each time period. The specific formula is as follows:

[0027] ;

[0028] in, This represents the saturation current deviation corresponding to the sample sub-time period. This is the midpoint of the saturation current reference range. This represents the average saturation current value over the time period. This represents the range of values ​​for the saturation current interval.

[0029] Furthermore, in this invention, the specific steps for obtaining the periodic photoelectric index sorting queue are as follows:

[0030] Acquire a sample semiconductor. During the photoelectric index testing of the sample semiconductor device, set several different types of photoelectric indices and select one sample photoelectric index from the set photoelectric indices.

[0031] When the photoelectric index of the sample is photoresponsivity, the photoresponsivity of the sample semiconductor device is monitored, and the deviation of the photoelectric index of the sample is obtained based on the monitoring results.

[0032] The photoelectric index deviation degree corresponding to each photoelectric index is obtained, resulting in multiple photoelectric index deviation degrees. The obtained multiple photoelectric index deviation degrees are then sorted in descending order to obtain a periodic photoelectric index sorting queue.

[0033] Furthermore, in this invention, the specific steps for obtaining the deviation of the sample photoelectric index are as follows:

[0034] During the photoresponsivity monitoring of the sample semiconductor device, a photoelectric test cycle is set.

[0035] During the photoelectric testing cycle, several photoelectric testing temperatures are set for the ambient space where the sample semiconductor is located, and a sample photoelectric testing temperature is selected from the set photoelectric testing temperatures. The sub-period when the ambient space is at the sample photoelectric testing temperature is marked as the sample sub-period.

[0036] Photoresponsivity monitoring is performed on the sample semiconductor during the sample sub-period, and the photoresponsivity deviation corresponding to the sample sub-period is obtained based on the monitoring results;

[0037] The light response deviation for each sub-time period corresponding to each ambient temperature is obtained, and the values ​​of the multiple light response deviations are compared. The light response deviation with the largest value is marked as the sample photoelectric index deviation.

[0038] Furthermore, in this invention, the specific steps for obtaining the optical response deviation are as follows:

[0039] The photoresponsivity value of the sample semiconductor at each time point within the sample sub-period is obtained, and the average of the obtained photoresponsivity values ​​at multiple time points is calculated to obtain the time-period average photoresponsivity.

[0040] Obtain the reference range of photoresponsivity corresponding to the sample semiconductor, and calculate the average value of the interval boundary corresponding to the reference range of photoresponsivity to obtain the median value of the reference range of photoresponsivity.

[0041] The range of light responsivity corresponding to the reference range is numerically obtained to obtain the range of light responsivity range.

[0042] The light response deviation corresponding to the sample sub-period is calculated by taking the light response range value, the median value of the light response baseline range, and the average light response of the time period; the specific formula is as follows:

[0043] ;

[0044] in, This represents the optical response deviation corresponding to the sample sub-time period. This is the midpoint of the reference range for optical responsivity. The average photoresponsivity over the time period. This represents the range of values ​​for the photoresponse.

[0045] Furthermore, in this invention, test data analysis is performed on the sample semiconductor device, and the analysis results are fed back. The specific steps are as follows:

[0046] Obtain the periodic electrical index sorting queue and the periodic photoelectric index sorting queue respectively;

[0047] The electrical performance of the sample semiconductor devices is analyzed based on the periodic electrical performance ranking queue, and the results of the electrical performance analysis are fed back.

[0048] The photoelectric index analysis of sample semiconductor devices is performed based on the periodic photoelectric index ranking queue, and the results of the photoelectric index analysis are fed back.

[0049] Furthermore, in this invention, the specific steps for analyzing the electrical test data of the sample semiconductor device are as follows:

[0050] In the periodic electrical index sorting queue, the deviation of the electrical index ranked first in the queue is marked as the first electrical index deviation, and the electrical index corresponding to the first electrical index deviation is marked as the first sequential electrical index. The deviation of the electrical index ranked pth in the queue is marked as the pth electrical index deviation, and the electrical index corresponding to the pth electrical index deviation is marked as the pth sequential electrical index.

[0051] Obtain the deviation benchmark range corresponding to the first-order electrical index. If the deviation of the first electrical index is within the deviation benchmark range, the analysis of the first-order electrical index is completed. If the deviation of the first electrical index is not within the deviation benchmark range, the sample semiconductor device is directly fed back to have an electrical index anomaly.

[0052] The electrical indicators from the second to the pth order are analyzed separately. If any electrical indicator is abnormal, the feedback is issued that the sample semiconductor device has an abnormal electrical indicator. If no electrical indicator is abnormal, the feedback is issued that the sample semiconductor device does not have an abnormal electrical indicator.

[0053] Furthermore, in this invention, the specific steps for analyzing photoelectric test data of the sample semiconductor device are as follows:

[0054] In the periodic photoelectric index sorting queue, the photoelectric index deviation at the first position in the queue is marked as the first photoelectric index deviation, and the photoelectric index corresponding to the first photoelectric index deviation is marked as the first sequential photoelectric index. The photoelectric index deviation at the qth position in the queue is marked as the qth photoelectric index deviation, and the photoelectric index corresponding to the qth photoelectric index deviation is marked as the qth sequential photoelectric index.

[0055] Obtain the deviation benchmark range corresponding to the first-order photoelectric index. If the deviation of the first photoelectric index is within the deviation benchmark range, the analysis of the first-order photoelectric index is completed. If the deviation of the first photoelectric index is not within the deviation benchmark range, the sample semiconductor device is directly fed back to have photoelectric index anomalies.

[0056] The photoelectric indicators from the second to the qth order are analyzed separately. If any photoelectric indicator is abnormal, the system will issue a report indicating that the sample semiconductor device has an abnormal photoelectric indicator. If no photoelectric indicator is abnormal, the system will issue a report indicating that the sample semiconductor device does not have an abnormal photoelectric indicator.

[0057] Compared with the prior art, the present invention has the following beneficial effects:

[0058] (1) This invention quantifies the performance fluctuation of devices under complex operating conditions by using dynamic temperature gradient testing (e.g., setting multiple ambient temperatures in the electrical index module during the D1 test cycle, and setting multiple photoelectric test temperatures in the photoelectric index module during the photoelectric test cycle) combined with a maximum deviation screening mechanism (selecting the maximum deviation of sub-periods at different temperatures as index characteristic values). For example, the saturation current deviation calculation effectively eliminates the influence of temperature interference on test accuracy by comparing the difference between the average saturation current of the time period and the median value of the reference interval, and normalizing it with the interval range value. This effectively reduces the test error of the electrical index deviation and significantly improves the data accuracy.

[0059] (2) This invention constructs a dual-index sorting queue fusion mechanism: the electrical index module sorts multiple electrical indices such as saturation current and on-resistance in descending order of their deviation, forming a periodic electrical index sorting queue; the photoelectric index module similarly generates a periodic photoelectric index sorting queue. The test analysis module further performs priority progressive analysis on the two types of queues (e.g., first verifying the first-priority index, and then checking the subsequent indices in turn), realizing a leap from "single index testing" to "multi-dimensional comprehensive evaluation". For example, when the saturation current deviation (electrical first priority) of a device is normal but the photoresponse deviation (photoelectric first priority) is abnormal, the system can accurately locate the photoelectric performance defect, avoiding the missed detection problem of traditional single index testing, and improving the comprehensiveness of the analysis.

[0060] (3) This invention provides R&D personnel with clear improvement directions through sorting queue visualization and rapid anomaly location (such as the periodic electrical / optoelectronic index sorting queue directly displaying the priority of index deviation). For example, if the on-resistance deviation of a certain device (the second priority in electrical aspects) is significantly higher than other indicators, R&D can prioritize the optimization of material doping processes; at the same time, the system achieves second-level judgment of abnormal indicators by comparing the deviation range with the historical normal data (such as whether the deviation of the first priority indicator is within the historical normal range), shortening the traditional manual analysis cycle from 24 hours to within 2 hours, effectively improving the efficiency of R&D iteration. In addition, the sorting queue mechanism concentrates resources on the optimization of indicators that have the greatest impact on device performance, reducing ineffective R&D costs. Attached Figure Description

[0061] Figure 1 This is an overall system block diagram of the present invention;

[0062] Figure 2 This is a schematic diagram of the periodic electrical index sorting queue of the present invention;

[0063] Figure 3 This is a schematic diagram of the periodic photoelectric index sorting queue of the present invention. Detailed Implementation

[0064] The present invention will be further described below with reference to the accompanying drawings and embodiments. The embodiments of the present invention include, but are not limited to, the following embodiments.

[0065] Please see Figure 1 The present invention provides a gallium oxide semiconductor device test data analysis system, including an electrical index module, an optoelectronic index module, a test analysis module and a server. The electrical index module, optoelectronic index module and test analysis module are respectively connected to the server, and the server controls the electrical index module, optoelectronic index module and test analysis module respectively.

[0066] The electrical index module sets an electrical index test cycle, performs various electrical index tests on sample semiconductor devices within the electrical index test cycle, obtains the electrical index deviation degree corresponding to each electrical index based on the test results, and sorts the obtained electrical index deviation degrees to obtain a periodic electrical index sorting queue.

[0067] The specific process is as follows:

[0068] The gallium oxide semiconductor devices that need to be tested and analyzed are acquired, and a sample semiconductor device is selected from the acquired gallium oxide semiconductor devices.

[0069] In this embodiment, the gallium oxide semiconductor devices involved are all gallium oxide semiconductor components that require electrical and photoelectric performance testing. These gallium oxide semiconductor components include, but are not limited to, photodiodes, light-emitting diodes, and laser diodes. During the electrical performance testing of the sample semiconductor devices, several different types of electrical parameters are set, and one sample electrical parameter is selected from these settings. In this embodiment, the electrical parameters involved include, but are not limited to, saturation current, on-resistance, and threshold voltage.

[0070] When the electrical index of the sample is saturation current, the saturation current of the sample semiconductor device is monitored, and the deviation of the sample electrical index is obtained based on the monitoring results.

[0071] The specific process is as follows:

[0072] During the saturation current monitoring of the sample semiconductor device, the time when the power line where the sample semiconductor device is located is energized is marked as the first cycle characteristic time value, the current time value is marked as the second cycle characteristic time value, and the value between the first cycle characteristic time value and the second cycle characteristic time value is marked as the D1 test cycle. In the D1 test cycle, several ambient temperatures are set for the environment space where the sample semiconductor is located, and one sample ambient temperature is selected from these set ambient temperatures. The sub-time period when the environment space is at the sample ambient temperature is marked as the sample sub-time period.

[0073] In this embodiment, all the ambient temperatures involved are within the rated ambient temperature range where the sample semiconductor can operate normally. Saturation current monitoring is performed on the sample semiconductor during the sample sub-period, and the saturation current deviation corresponding to the sample sub-period is obtained based on the monitoring results.

[0074] The specific process is as follows:

[0075] The saturation current value of the sample semiconductor at each time point within the sample sub-period is obtained, and the average of the obtained saturation current values ​​at multiple time points is calculated to obtain the average saturation current value of the period.

[0076] Obtain the reference range of saturated current corresponding to the sample semiconductor, and obtain the average value of the range corresponding to the reference range of saturated current to obtain the median value of the reference range of saturated current.

[0077] In this embodiment, the saturation current reference range referred to here is specifically the saturation current range set during the research and development design of the sample semiconductor.

[0078] The range of the saturated current range is obtained by numerically acquiring the range corresponding to the reference range of the saturated current.

[0079] The saturation current deviation for each sample sub-period is calculated by taking the saturation current range, the median of the saturation current baseline range, and the average saturation current over the time period. The specific formula is as follows:

[0080] ;

[0081] in, This represents the saturation current deviation corresponding to the sample sub-time period. This is the midpoint of the saturation current reference range. This represents the average saturation current value over the time period. This represents the range of values ​​for the saturation current interval.

[0082] Repeat the process of obtaining the saturation current deviation corresponding to the sample sub-time period, obtain the saturation current deviation corresponding to each ambient temperature sub-time period, and compare the numerical values ​​of the obtained multiple saturation current deviations. Mark the saturation current deviation with the largest value as the sample electrical index deviation.

[0083] Repeat the process of measuring the deviation of electrical indicators in the sample, obtain the deviation of electrical indicator for each electrical indicator, obtain multiple deviations of electrical indicators, and sort the multiple deviations of electrical indicators in descending order to obtain a periodic electrical indicator sorting queue.

[0084] The electrical performance module offers the following benefits:

[0085] The systematic testing process enables multi-dimensional and precise evaluation and optimization of semiconductor device performance: Firstly, by dynamically monitoring key electrical parameters (such as saturation current and on-resistance) under different ambient temperatures, combined with the deviation calculation of the reference range, the performance stability of the device under complex operating conditions can be quantified. In particular, by selecting the maximum deviation as the indicator feature value, the weakest link of the device can be effectively identified.

[0086] Secondly, the established periodic electrical index ranking queue provides R&D personnel with a visual priority for improvement, enabling resources to focus on optimizing the indexes that have the greatest impact on device performance, thus significantly improving R&D efficiency.

[0087] Third, the module's built-in standardized testing cycle and multi-parameter collaborative analysis mechanism not only ensure the comparability of test results, but also strengthen the environmental adaptability verification of the device through environmental temperature gradient design, ultimately forming a closed-loop quality control system from in-depth analysis of single indicators to comprehensive optimization of multiple parameters.

[0088] The photoelectric index module sets a photoelectric index test cycle, performs various photoelectric index tests on sample semiconductor devices within the photoelectric index test cycle, obtains the photoelectric index deviation degree corresponding to each photoelectric index based on the test results, and sorts the obtained multiple photoelectric index deviation degrees to obtain a periodic photoelectric index sorting queue.

[0089] The specific process is as follows:

[0090] To obtain a sample semiconductor, several different types of photoelectric indicators are set during the photoelectric index testing of the sample semiconductor device, and one sample photoelectric indicator is selected from the set photoelectric indicators.

[0091] In this embodiment, the photoelectric parameters involved include, but are not limited to, photoresponsivity, dark current, and photoelectric linearity.

[0092] When the photoelectric index of the sample is photoresponse, the photoresponse of the sample semiconductor device is monitored, and the deviation of the photoelectric index of the sample is obtained based on the monitoring results.

[0093] In this embodiment, the optical response specifically refers to the optical responsivity, which is an indicator of the efficiency of a device in converting optical signals into electrical signals. It is defined as the ratio of the output electrical signal (such as photocurrent) to the input optical power.

[0094] The specific process is as follows:

[0095] During the photoresponsivity monitoring of the sample semiconductor device, the time value of the power line where the sample semiconductor device is located is marked as the first cycle characteristic time value, the current time value is marked as the second cycle characteristic time value, and the value between the first cycle characteristic time value and the second cycle characteristic time value is marked as the photoelectric test cycle.

[0096] During the photoelectric testing cycle, several photoelectric testing temperatures are set for the ambient space where the sample semiconductor is located. One sample photoelectric testing temperature is selected from the set photoelectric testing temperatures, and the sub-time period when the ambient space is at the sample photoelectric testing temperature is marked as the sample sub-time period.

[0097] In this embodiment, the multiple photoelectric test temperatures involved are all within the rated ambient temperature range where the sample semiconductor can operate normally.

[0098] The photoresponsivity of the sample semiconductor in the sample sub-period is monitored, and the photoresponsivity deviation corresponding to the sample sub-period is obtained based on the monitoring results.

[0099] The specific process is as follows:

[0100] The photoresponsivity value of the sample semiconductor at each time point within the sample sub-period is obtained, and the average of the obtained photoresponsivity values ​​at multiple time points is calculated to obtain the average photoresponsivity of the time period.

[0101] Obtain the reference range of photoresponsivity corresponding to the sample semiconductor, and calculate the average value of the interval boundary corresponding to the reference range of photoresponsivity to obtain the median value of the reference range of photoresponsivity.

[0102] In this embodiment, the photoresponse reference range referred to here is specifically the photoresponse range set by the sample semiconductor during its research and development design.

[0103] The range of light responsivity corresponding to the reference range is numerically obtained to obtain the range value of light responsivity range.

[0104] The light response deviation corresponding to the sample sub-period is obtained by calculating the light response range value, the median value of the light response baseline range, and the average light response of the time period.

[0105] The optical response deviation corresponding to the sample sub-time period is calculated using the following formula:

[0106] ;

[0107] in, This represents the optical response deviation corresponding to the sample sub-time period. This is the midpoint of the reference range for optical responsivity. The average photoresponsivity over the time period. This represents the range of values ​​for the photoresponse.

[0108] Repeat the process of obtaining the light response deviation for each sample sub-time period, obtain the light response deviation for each ambient temperature sub-time period, compare the values ​​of the obtained light response deviations, and mark the light response deviation with the largest value as the sample photoelectric index deviation.

[0109] Repeat the sample photoelectric index deviation, obtain the photoelectric index deviation corresponding to each photoelectric index, obtain multiple photoelectric index deviations, and sort the multiple photoelectric index deviations in descending order to obtain a periodic photoelectric index sorting queue.

[0110] The test analysis module analyzes the test data of the sample semiconductor devices according to the periodic electrical index sorting queue and the periodic optoelectronic index sorting queue, and provides feedback on the analysis results.

[0111] The specific process is as follows:

[0112] Obtain the sorted queues for periodic electrical indices and periodic photoelectric indices, respectively. Please refer to [link / reference]. Figure 2 In the periodic electrical index sorting queue, the deviation of the electrical index ranked first in the queue is marked as the first electrical index deviation, and the electrical index corresponding to the first electrical index deviation is marked as the first-order electrical index. The deviation of the electrical index ranked second in the queue is marked as the second electrical index deviation, and the electrical index corresponding to the second electrical index deviation is marked as the second-order electrical index. And so on, the deviation of the electrical index ranked p in the queue is marked as the p-th electrical index deviation, and the electrical index corresponding to the p-th electrical index deviation is marked as the p-th-order electrical index.

[0113] In this embodiment, p refers to the number of electrical index deviations present in the periodic electrical index sorting queue.

[0114] Obtain the deviation benchmark range corresponding to the first-order electrical index. If the deviation of the first electrical index is within the deviation benchmark range, the analysis of the first-order electrical index is completed. If the deviation of the first electrical index is not within the deviation benchmark range, the sample semiconductor device is found to have an electrical index anomaly.

[0115] The deviation benchmark range corresponding to the first-order electrical index involved here is specifically the numerical range composed of the deviation of the first electrical index of historical gallium oxide semiconductor devices for which test data analysis has been completed and the analysis results are normal.

[0116] Repeat the process of analyzing the first-rank electrical indicators, and analyze the second-rank electrical indicators to the p-th-rank electrical indicators respectively. If any electrical indicator is abnormal, then publish feedback that the sample semiconductor device has an abnormal electrical indicator. If no electrical indicator is abnormal, then publish feedback that the sample semiconductor device does not have an abnormal electrical indicator.

[0117] The photoelectric index module has the following specific advantages:

[0118] The optoelectronic performance module and the testing and analysis module work together to construct a closed-loop optimization system for semiconductor device performance. The optoelectronic performance module dynamically monitors key optoelectronic parameters such as photoresponsivity under different ambient temperatures, quantitatively evaluates the stability of the device's photoelectric conversion efficiency by combining baseline deviation measurements, and establishes a priority ranking of indicators to provide clear improvement directions for R&D. The testing and analysis module further integrates the ranking results of electrical and optoelectronic indicators, uses a priority-based progressive analysis method to accurately locate primary abnormal indicators, and quickly identifies potential device defects by comparing them with historical normal data ranges, significantly shortening the testing feedback cycle. This system not only achieves comprehensive device performance diagnosis under multi-parameter collaboration but also enables R&D personnel to focus on optimizing key indicators through intelligent ranking and anomaly warning mechanisms, greatly improving the iteration efficiency and quality control accuracy of the integrated optoelectronic and electrical performance of semiconductor devices.

[0119] The photoelectric index analysis of sample semiconductor devices is performed based on the periodic photoelectric index ranking queue, and the analysis results are fed back.

[0120] The specific process is as follows:

[0121] Please see Figure 3 In the periodic photoelectric index sorting queue, the photoelectric index deviation at the first position in the queue is marked as the first photoelectric index deviation, and the photoelectric index corresponding to the first photoelectric index deviation is marked as the first sequential photoelectric index. The photoelectric index deviation at the second position in the queue is marked as the second photoelectric index deviation, and the photoelectric index corresponding to the second photoelectric index deviation is marked as the second sequential photoelectric index. And so on, the photoelectric index deviation at the qth position in the queue is marked as the qth photoelectric index deviation, and the photoelectric index corresponding to the qth photoelectric index deviation is marked as the qth sequential photoelectric index.

[0122] In this embodiment, q refers to the number of photoelectric index deviations existing in the periodic photoelectric index sorting queue.

[0123] Obtain the deviation benchmark range corresponding to the first-order photoelectric index. If the deviation of the first photoelectric index is within the deviation benchmark range, the analysis of the first-order photoelectric index is completed. If the deviation of the first photoelectric index is not within the deviation benchmark range, it is reported that the sample semiconductor device has photoelectric index anomalies.

[0124] The deviation benchmark range corresponding to the first-order photoelectric index involved here is specifically the numerical range composed of the deviation of the first photoelectric index of historical gallium oxide semiconductor devices for which test data analysis has been completed and the analysis results are normal.

[0125] Repeat the process of analyzing the first-ranked photoelectric index, and analyze the second-ranked to the qth-ranked photoelectric index respectively. If any photoelectric index is abnormal, then publish feedback that the sample semiconductor device has photoelectric index abnormalities. If no photoelectric index is abnormal, then publish feedback that the sample semiconductor device does not have photoelectric index abnormalities.

[0126] The photoelectric index analysis module has the following specific advantages:

[0127] The optoelectronic performance analysis module achieves efficient and accurate evaluation of semiconductor device optoelectronic performance by establishing a priority-driven anomaly detection mechanism. First, a priority analysis architecture based on a periodic optoelectronic performance ranking queue ensures that R&D resources are focused on the key indicators most significantly impacting device performance. Through a progressively advancing analysis logic, it significantly improves anomaly detection efficiency while ensuring comprehensive analysis. Second, a deviation benchmark range constructed from historical normal data serves as the evaluation standard, achieving objective quantitative evaluation of test results and effectively reducing false positives by adapting to the inherent differences in characteristics between different batches of devices through a dynamic range mechanism. Third, the established anomaly feedback mechanism, through item-by-item verification of optoelectronic performance indicators, accurately identifies performance bottlenecks, providing a clear direction for subsequent process optimization. Simultaneously, comprehensive indicator coverage analysis ensures the overall reliability verification of device optoelectronic performance. This closed-loop analysis system not only shortens the R&D iteration cycle but also significantly improves the performance optimization accuracy and quality control level of gallium oxide-based optoelectronic devices through a data-driven decision-making mechanism.

[0128] The above embodiments are merely one of the preferred embodiments of the present invention and should not be used to limit the scope of protection of the present invention. Any modifications or refinements made to the main design concept and spirit of the present invention that are not of substantial significance, but solve the same technical problem as the present invention, should be included within the scope of protection of the present invention.

Claims

1. A gallium oxide semiconductor device test data analysis system, comprising: Comprise: Electricity index module: a plurality of electrical indicators for testing the sample semiconductor devices in the electrical index test cycle, according to the test results of each electrical index corresponding to the electrical index deviation, and the obtained multiple electrical index deviation sorting, get cycle electrical index sorting queue; the sample electrical index deviation is obtained, when the sample electrical index is the saturation current, then the sample semiconductor device is monitored, according to the monitoring result, the sample electrical index deviation is obtained; the specific steps are as follows: In the process of monitoring the saturation current of the sample semiconductor device, the time value of the power line of the sample semiconductor device is marked as the first cycle characteristic time value, the time value of the current time is marked as the second cycle characteristic time value, and the value between the first cycle characteristic time value and the second cycle characteristic time value is marked as D1 test cycle; In D1 test cycle, a plurality of environmental temperatures are set for the environment space of the sample semiconductor, and a sample environmental temperature is selected from the plurality of environmental temperatures, and the sub period when the environment space is at the sample environmental temperature is marked as the sample sub period; The saturation current of the sample semiconductor in the sample sub period is monitored, and the saturation current deviation corresponding to the sample sub period is obtained according to the monitoring result; The saturation current deviation corresponding to each environmental temperature is obtained, and the numerical value of the obtained multiple saturation current deviation is compared, and the maximum saturation current deviation is marked as the sample electrical index deviation; Optoelectronic index module: a plurality of optoelectronic indicators for testing the sample semiconductor devices in the optoelectronic index test cycle, according to the test results of each optoelectronic indicator corresponding to the optoelectronic indicator deviation, and the obtained multiple optoelectronic indicator deviation sorting, get cycle optoelectronic index sorting queue; Test analysis module: according to the cycle electrical index sorting queue and the cycle optoelectronic index sorting queue, the sample semiconductor device is analyzed, and the analysis result is fed back.

2. The system for analyzing test data of a gallium oxide semiconductor device according to claim 1, wherein The specific steps of obtaining the cycle electrical index sorting queue are as follows: The gallium oxide semiconductor device needs to be tested and analyzed, and one sample semiconductor device is selected from the plurality of gallium oxide semiconductor devices; In the process of testing the electrical index of the sample semiconductor device, a plurality of different types of electrical index are set, and one sample electrical index is selected from them; the electrical index includes saturation current, on resistance and threshold voltage; The electrical index deviation corresponding to each electrical index is obtained, and the plurality of electrical index deviation is obtained, and the plurality of electrical index deviation is arranged in descending order, and the cycle electrical index sorting queue is obtained.

3. The system for analyzing test data of a gallium oxide semiconductor device according to claim 2, wherein The specific steps of obtaining the saturation current deviation are as follows: The time point saturation current value corresponding to each time point of the sample semiconductor in the sample sub period is obtained, and the plurality of time point saturation current values are calculated, and the time period average saturation current value is obtained. The saturation current reference interval corresponding to the sample semiconductor is obtained, and the interval average value corresponding to the saturation current reference interval is obtained to obtain a saturation current reference interval middle value; The interval range corresponding to the saturation current reference interval is obtained to obtain a saturation current interval range value; The saturation current interval range value, the saturation current reference interval middle value, and the time period average saturation current value are calculated to obtain a saturation current deviation degree corresponding to the sample sub-period; the specific formula is as follows: ； wherein, is a saturation current bias degree for a sample sub-period, is a saturation current reference interval middle value, is a period average saturation current value, is a saturation current interval range value.

4. The system for analyzing test data of a gallium oxide semiconductor device according to claim 3, wherein The specific steps of obtaining the periodic photoelectric index sorting queue are as follows: A sample semiconductor is obtained, and in the process of testing the sample semiconductor device, a plurality of different types of photoelectric indicators are set, and a sample photoelectric indicator is selected from the set photoelectric indicators; wherein the photoelectric indicators include photoresponsivity, dark current, and photoelectric linearity; When the sample photoelectric indicator is photoresponsivity, the sample semiconductor device is monitored for photoresponsivity, and the sample photoelectric indicator deviation degree is obtained according to the monitoring result; The photoelectric indicator deviation degree corresponding to each photoelectric indicator is obtained to obtain a plurality of photoelectric indicator deviation degrees, and the obtained plurality of photoelectric indicator deviation degrees are arranged in descending order to obtain a periodic photoelectric indicator sorting queue.

5. The system for analyzing test data of a gallium oxide semiconductor device according to claim 1, wherein The specific steps of obtaining the sample photoelectric indicator deviation degree are as follows: In the process of monitoring the sample semiconductor device for photoresponsivity, a photoelectric test period is set; In the photoelectric test period, a plurality of photoelectric test temperatures are set for the environment space in which the sample semiconductor is located, and a sample photoelectric test temperature is selected from the plurality of photoelectric test temperatures, and a sub-period in which the environment space is at the sample photoelectric test temperature is marked as a sample sub-period; The sample semiconductor in the sample sub-period is monitored for photoresponsivity, and the photoresponse deviation degree corresponding to the sample sub-period is obtained according to the monitoring result; The photoresponse deviation degree corresponding to each environment temperature is obtained, and the obtained plurality of photoresponse deviation degrees are compared in value to obtain the sample photoelectric indicator deviation degree.

6. The system for analyzing test data of a gallium oxide semiconductor device according to claim 5, wherein The specific steps of obtaining the photoresponse deviation degree are as follows: The time point photoresponsivity value corresponding to each time point of the sample semiconductor in the sample sub-period is obtained, and the obtained plurality of time point photoresponsivity values are averaged to obtain a time period average photoresponsivity; The photoresponsivity reference interval corresponding to the sample semiconductor is obtained, and the interval boundary corresponding to the photoresponsivity reference interval is averaged to obtain a photoresponsivity reference interval middle value; The interval range corresponding to the photoresponsivity reference interval is obtained to obtain a photoresponsivity interval range value; The photoresponsivity interval range value, the photoresponsivity reference interval middle value, and the time period average photoresponsivity are calculated to obtain a photoresponse deviation degree corresponding to the sample sub-period; the specific formula is as follows: ； wherein, is a light response deviation degree for a sample sub-period, is a light response reference interval middle value, is a period average light response degree, is a light response interval range value.

7. The system for analyzing test data of a gallium oxide semiconductor device according to claim 1, wherein The sample semiconductor device is tested and analyzed, and the analysis result is fed back, and the specific steps are as follows: The periodic electrical index sorting queue and the periodic photoelectric index sorting queue are obtained respectively; According to the periodic electrical index sorting queue, the sample semiconductor device is subjected to electrical index analysis, and the electrical index analysis result is fed back. According to the periodic photoelectric index sorting queue, the sample semiconductor device is subjected to photoelectric index analysis, and the photoelectric index analysis result is fed back.

8. The system for analyzing test data of a gallium oxide semiconductor device according to claim 7, wherein The specific steps of the electrical test data analysis of the sample semiconductor device are as follows: In the periodic electrical index sorting queue, the electrical index deviation degree at the first position of the queue is marked as the first electrical index deviation degree, and the electrical index corresponding to the first electrical index deviation degree is marked as the first order electrical index. The electrical index deviation degree at the pth position of the queue is marked as the pth electrical index deviation degree, and the electrical index corresponding to the pth electrical index deviation degree is marked as the pth order electrical index. The deviation degree reference interval corresponding to the first order electrical index is obtained. If the first electrical index deviation degree is in the deviation degree reference interval, the analysis of the first order electrical index is completed. If the first electrical index deviation degree is not in the deviation degree reference interval, it is directly fed back that the sample semiconductor device has an electrical index abnormality. The second order electrical index to the pth order electrical index are analyzed respectively. If any one of the electrical indexes has an abnormality, it is fed back that the sample semiconductor device has an electrical index abnormality. If none of the electrical indexes has an abnormality, it is fed back that the sample semiconductor device does not have an electrical index abnormality.

9. The system for analyzing test data of a gallium oxide semiconductor device according to claim 8, wherein The specific steps of the photoelectric test data analysis of the sample semiconductor device are as follows: In the periodic photoelectric index sorting queue, the photoelectric index deviation degree at the first position of the queue is marked as the first photoelectric index deviation degree, and the photoelectric index corresponding to the first photoelectric index deviation degree is marked as the first order photoelectric index. The photoelectric index deviation degree at the qth position of the queue is marked as the qth photoelectric index deviation degree, and the photoelectric index corresponding to the qth photoelectric index deviation degree is marked as the qth order photoelectric index. The deviation degree reference interval corresponding to the first order photoelectric index is obtained. If the first photoelectric index deviation degree is in the deviation degree reference interval, the analysis of the first order photoelectric index is completed. If the first photoelectric index deviation degree is not in the deviation degree reference interval, it is directly fed back that the sample semiconductor device has a photoelectric index abnormality. The second order photoelectric index to the qth order photoelectric index are analyzed respectively. If any one of the photoelectric indexes has an abnormality, it is fed back that the sample semiconductor device has a photoelectric index abnormality. If none of the photoelectric indexes has an abnormality, it is fed back that the sample semiconductor device does not have a photoelectric index abnormality.

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