Power module heat dissipation structure and manufacturing method thereof

Abstract

The application discloses a power module heat dissipation structure and a manufacturing method thereof, and belongs to the field of semiconductor devices. First, a fiber reinforced phase change layer is prepared through a gradient calendering process, then a low-thermal-resistance interface material is combined with a liquid cooling plate body, a uniform temperature film is combined with the low-thermal-resistance interface material using a coating device, a uniform temperature liquid cooling plate is obtained through a gradient hot pressing process, then the fiber reinforced phase change layer is installed on both sides of a chip, the uniform temperature liquid cooling plate and the chip layer are alternately stacked, a stacked structure with n layers of power chips and n+1 layers of uniform temperature liquid cooling plates (n>=1, and n is an integer) is obtained, then the whole device is pressurized and a fastening structure is installed, and finally, a liquid cooling pipeline is installed and applied. The heat dissipation structure prepared by the method has the characteristics of high space utilization and high heat dissipation efficiency. The method is simple in operation, high in production efficiency, and suitable for industrial production.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of semiconductor devices, and particularly relates to a power module heat dissipation structure and a manufacturing method thereof. BACKGROUND

[0002] With the increasing integration of electronic devices, the volume power density or area power density of electronic components and devices is greatly increased. If the internal heat cannot be effectively dissipated, the junction temperature of the components will rise sharply, and when the maximum allowable junction temperature is exceeded, the performance of the components will be reduced or even damaged. Therefore, efficient heat dissipation technology is needed to ensure the stable operation of the equipment. Traditionally, high-power electronic components use heat pipes, heat plates, and heat sinks for heat dissipation, which are usually installed directly above the components. However, when there are multiple heat sources in the system, the heat dissipation modules are scattered, the number of system fans increases, the heat dissipation efficiency is low, the effect is poor, there are local hot spots, and space is wasted, which cannot meet the requirements of modern electronic devices for miniaturization and high efficiency.

[0003] The present application designs a power module structure for double-sided integrated liquid cooling heat dissipation of multiple high-power chips, which improves the heat dissipation efficiency and saves space compared to the traditional single-sided heat dissipation structure. The present application introduces heat-conducting fibers into the high-thermal-conductivity phase change material through a unique process, which improves the mechanical properties and temperature shock resistance of the heat-conducting phase change material, reduces its thermal resistance, and effectively slows down the leakage of the phase change material. The present application also prepares a low-thermal-resistance and temperature-equalizing liquid cooling plate through a unique process, so that the heat generated by the heating elements can be quickly distributed and dissipated. The method provided by the present application also has the characteristics of simple process, low cost, and industrial production. SUMMARY

[0004] The technical problem to be solved by the present application is to overcome the shortcomings of the prior art, adopt a double-sided heat dissipation structure, and achieve efficient heat dissipation of the chips.

[0005] A manufacturing method of a power module heat dissipation structure, characterized in that the structure comprises: a first temperature-equalizing liquid cooling plate... an nth temperature-equalizing liquid cooling plate, an (n+1)th temperature-equalizing liquid cooling plate, a fiber-reinforced phase change layer, a first power chip layer... an (n-1)th power chip layer, an nth power chip layer, a fastening structure, and a liquid cooling pipe (n≥1, and n is an integer), and the manufacturing steps comprise:

[0006] S01, fiber-reinforced phase change layer preparation: obtain a gasket-shaped heat-conducting phase change material through mechanical stirring, centrifugal bubble removal, and calendering process, place a heat-conducting fiber cloth horizontally between the two gasket-shaped heat-conducting phase change material layers, and obtain a fiber-reinforced phase change layer through gradient calendering process;

[0007] S02, uniform temperature liquid cooling plate preparation: using a mounting process, screen printing process or dispensing process to composite low thermal resistance interface material with liquid cooling plate, then connecting the uniform temperature film with low thermal resistance interface material through roll-to-roll film coating equipment, placing the obtained structure as a whole in the press for gradient heat pressing, and obtaining the uniform temperature liquid cooling plate after pressure holding for a period of time, the material used before heat pressing is low thermal resistance interface material, the low thermal resistance interface material forms a low thermal resistance interface layer structure after heat pressing, the in-plane thermal conductivity of the film material used is greater than 200 W / (m·K), the thickness is less than 100 pm, and the film material contains one or more of metal, silicon carbide, diamond, carbon nanotube, graphene, graphite nanosheet, graphite, carbon fiber and ceramic fiber, and the thermal resistance of the low thermal resistance interface layer is less than 0.1℃·cm 2 / W (50 Psi pressure), the low thermal resistance interface material is one or more of a thermally conductive gel, a thermally conductive phase change material, a thermally conductive grease, and a thermally conductive gasket;

[0008] S03, first power chip layer installation: double-sided mounting the fiber-reinforced phase change layer obtained in S01 to the first power chip layer, and then mounting the obtained structure to the designed position on one side surface of the uniform temperature film of the first uniform temperature liquid cooling plate obtained in S02;

[0009] S04, second uniform temperature liquid cooling plate installation: installing the second uniform temperature liquid cooling plate prepared in S02 on one side of the fiber-reinforced phase change layer exposed on the first power chip layer obtained in S03;

[0010] S05, layer-by-layer stacking: repeating the steps of S03 and S04 to obtain a stacked structure with n layers of power chips and n+1 layers of uniform temperature liquid cooling plates;

[0011] S06, fastening structure installation: heating the structure obtained in S05 and applying pressure in a direction perpendicular to the chip surface, maintaining for a period of time, and then removing the pressure after mechanical fastening on the reserved position on the surface of the liquid cooling plate;

[0012] S07, flow channel connection: connecting the liquid cooling pipe with each layer of liquid cooling plates in the structure obtained in S06, and then introducing cooling liquid and working.

[0013] Further, the thermal conductivity of the gasket-shaped thermally conductive phase change material in the S01 step is greater than 6 W / (m·K) and the thermal resistance is less than 0.1℃·cm 2 / W (50 Psi pressure), insulation strength greater than 2 kV / mm, thickness less than 200 pm, including thermally conductive fillers and phase change materials, the thermally conductive fillers are graded powders of silver-coated copper powder and diamond powder, the particle size range of the silver-coated copper powder is 1-12 pm, the particle size range of the diamond powder is 0.01-2 pm, the phase change material has a phase change latent heat greater than 200 J / g, including one or more of paraffin, polyethylene glycol, silicone wax, polyethylene wax, polypropylene wax, Fischer-Tropsch wax, polyester wax, AMS wax, fatty acid, the thermally conductive fiber cloth of the S01 step is made of thermally conductive fibers, the thermal conductivity of which is greater than 20 W / (m·K), the fiber diameter range is 6-20 pm, the mesh number of the thermally conductive fiber cloth is 140-600 mesh, and the thickness range is 20-40 pm, the thermally conductive fiber contains one or more of carbon fiber, carbon nanotube, graphene, aluminum oxide, boron nitride, silicon carbide, silver, copper, and aluminum.

[0014] Further, characterized in that the gradient calendering process of the S01 step is divided into two, three or four sections, the calendering interval of the first section is 200-400 pm, the calendering interval of the last section is 60-140 pm, and the calendering interval of the intermediate section is between the first and last sections and gradually decreases, and the roll temperature of the calendering process is 70-120°C.

[0015] Further, characterized in that the liquid cooling plate of the S02 step includes a first liquid cooling plate... an n-th liquid cooling plate and an n+1-th liquid cooling plate, the first liquid cooling plate and the n+1-th liquid cooling plate are both single-sidedly compounded with an isothermal film, the liquid cooling plate between the first liquid cooling plate and the n+1-th liquid cooling plate is double-sidedly compounded with an isothermal film, n≥1, the liquid cooling plate is one or more of a blow-up liquid cooling plate, a punch-type liquid cooling plate, and an assembled liquid cooling plate, the connection method of the water inlet and outlet of the liquid cooling plate with the main body of the liquid cooling plate is one or more of welding, buckle connection, gasket sealing, screw connection, interference fit, and sealing glue filling, the welding method is preferably friction stir welding and brazing, the material used for the main body of the liquid cooling plate has a thermal conductivity greater than 20 W / (m·K) and contains one or more of copper alloy, aluminum alloy, copper-based composite material, aluminum-based composite material, graphite, thermally conductive plastic, alumina ceramic, aluminum nitride ceramic, silicon nitride ceramic, zirconium oxide ceramic, and boron nitride ceramic, and the thickness range is 0.1-50 mm.

[0016] Further, characterized in that the gradient hot pressing process of the S02 step is divided into two sections, the hot pressing pressure of the first section is 10-40 Psi, and the hot pressing pressure of the second section is greater than 50 Psi, and the temperature range of the two sections is 70-120°C.

[0017] Further, characterized in that the power chip of the S03, S04, S05 steps is one or more of a field effect tube, an insulated gate bipolar transistor, a triode, a thyristor, and a diode, and the chip has a heat dissipation power greater than 4 W and a side length of 0.5 mm to 50 mm.

[0018] Further, characterized in that the end temperature of the temperature rise in the S06 step is determined according to the melting point of the phase change material and the maximum temperature resistance of the chip, and the temperature range is 60 to 140 DEG C, the pressure in the S06 step is 10 to 110 Psi, and the pressure time is 1 to 20 min.

[0019] Further, characterized in that the fastening structure in the S07 step is made of one or more of metal, resin, ceramic fiber, and composite material, and has a tensile strength greater than 100 MPa and a temperature resistance greater than 150 DEG C.

[0020] A power module heat dissipation structure, characterized in that the heat dissipation structure is prepared by any one of the above methods, can meet the heat dissipation requirement of a total heat dissipation power greater than 60 W of the chip, and has the function of simultaneously performing double-sided liquid cooling heat dissipation on a multi-layer chip stacking structure.

[0021] (1) The heat dissipation structure prepared by the method can stack multiple chips and simultaneously perform double-sided liquid cooling heat dissipation, has the advantages of high space utilization and high heat dissipation efficiency;

[0022] (2) The heat dissipation structure prepared by the method introduces the heat-conductive fiber cloth into the heat-conductive phase change material through a unique gradient calendering process, improves the thermal conductivity and mechanical properties of the heat-conductive phase change material, effectively reduces the thickness of the phase change material, and prevents leakage of the phase change material;

[0023] (3) The heat dissipation structure prepared by the method composites the liquid cooling plate and the uniform temperature film through industrialized equipment and a unique gradient hot pressing process, introduces the uniform temperature film on the surface of the liquid cooling plate while reducing the interfacial thermal resistance therebetween, and has good uniform temperature effect and high heat dissipation efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0024] FIG. 1 is a flow chart of the overall manufacturing process of the present application. Figure 1

[0025] FIG. 3 is a three-dimensional structural schematic diagram of the present application. Figure 2

[0026] FIG. 5 is a side view of the present application, and the lower left corner is a local enlarged view. Figure 3

[0027] FIG. 7 is a schematic diagram of the chip numbers of the first chip layer and the second chip layer of the embodiment. Figure 4 FIG. 7 is a schematic diagram of the chip numbers of the first chip layer and the second chip layer of the embodiment.​​​

[0028] Figure 2 is a schematic diagram of the first chip layer of the first chip of the comparative example. Figure 5 Figure 3 is a schematic diagram of the first chip layer of the first chip of the example.

[0029] Figure 4 is a schematic diagram of the first chip layer of the second chip of the comparative example. Figure 6 Figure 5 is a schematic diagram of the first chip layer of the second chip of the example. DETAILED DESCRIPTION

[0030] In the following description, only certain exemplary embodiments are described in full detail. It should be apparent to those skilled in the art that the described embodiments can be modified in various different ways without departing from the spirit or scope of the application. The accompanying drawings and description are, therefore, to be taken as illustrative and not restrictive.

[0031] The preferred embodiments of the present application will be described hereinafter with reference to the accompanying drawings. It is to be noted that the preferred embodiments described herein are merely for the purpose of illustration and explanation and are not intended to limit the present application.

[0032] In the description of the present application, it is to be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "straight", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are merely for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second" are for the purpose of description only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.

[0033] The following disclosure provides many different embodiments, or examples, for implementing the present application. For purposes of explanation and non limitation, specific details are set forth in order to provide a thorough understanding of the present application. However, it will be apparent to one skilled in the art that the present application can be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known methods are omitted so as not to obscure the description of the present application with unnecessary detail. The various embodiments described herein are presented only by way of example and are not intended to limit the scope of the application. Furthermore, the described embodiments can be implemented in any number of ways, using a wide variety of programming techniques and computer languages.

[0034] EMBODIMENTS

[0035] The embodiment specifically illustrates the application of the manufacturing method of the power module heat dissipation structure in the heat dissipation of MOSFET chips.

[0036] When n = 2, the prepared heat dissipation structure has 2 layers of power chips and 3 layers of temperature equalization liquid cooling plates, as shown in Figure 2 and Figure 3 The power module heat dissipation structure mainly includes the following parts: a liquid cooling plate 101, a low thermal resistance interface layer 102, a temperature equalization film 103, a fiber-reinforced phase change layer 104, a first power chip layer 105, a second power chip layer 106, a liquid cooling pipe 107, and a fastening structure 108. The liquid cooling plate 101, the low thermal resistance interface layer 102, and the temperature equalization film 103 together constitute a temperature equalization liquid cooling plate, which is composed of a first temperature equalization liquid cooling plate, a second temperature equalization liquid cooling plate, and a third temperature equalization liquid cooling plate from bottom to top.

[0037] S01, fiber-reinforced phase change layer preparation: silver-coated copper powder, diamond powder, phase change material, and other components are prepared into a gasket-shaped heat-conducting phase change material through mechanical stirring, centrifugal bubble removal, and calendering process. The thermal conductivity of the obtained gasket-shaped heat-conducting phase change material is 14 W / (m·K), the thermal resistance is 0.06 ℃·cm 2 / (50 Psi pressure), the thickness is 180 µm, the insulation strength is 2.4 kV / mm, the particle size distribution of the silver-coated copper powder is 1~12 µm, the D50 is 7 µm, the particle size distribution of the diamond powder is 0.01~2 µm, the D50 is 1 µm, the phase change material is high-purity paraffin, the phase change latent heat is 256 J / g, the heat-conducting fiber cloth is horizontally placed in the middle of the two gasket-shaped heat-conducting phase change material layers, and the fiber-reinforced phase change layer 104 is obtained through gradient calendering process. The heat-conducting fiber used in the heat-conducting fiber cloth is silver wire with a purity of 99.9%, the thermal conductivity is greater than 400 W / (m·K), the fiber diameter is 10 µm, the mesh number of the fiber web is 200, and the thickness is 20 µm. The calendering process is divided into two sections. The first section of the calendering process has a front roller spacing of 220 µm and a temperature rise of 80 ℃. The second section of the calendering process has a front roller spacing of 70 µm and a temperature rise of 80 ℃. The calendering machine is a double-roller calendering machine.

[0038] S02, temperature equalization liquid cooling plate preparation: a low thermal resistance interface material is compounded with the liquid cooling plate 101 using a silk screen process, then a temperature equalization film is connected with the low thermal resistance interface material through a roll-to-roll film coating device, and finally the obtained structure is placed in a press for gradient hot pressing. After standing for a period of time, the temperature equalization liquid cooling plate is obtained. The material used before hot pressing is a low thermal resistance interface material, and the low thermal resistance interface material forms a low thermal resistance interface layer 102 after hot pressing. The low thermal resistance interface material is the heat-conducting phase change material prepared in S01. The thermal resistance of the low thermal resistance interface layer 102 is 0.06 ℃·cm 2W (50 Psi pressure), the uniform temperature film 103 is a pyrolytic graphite film with a transverse thermal conductivity of 1200 W / (m·K) and a thickness of 50 pm, n=2, the first and third uniform temperature liquid cooling plates are single-sided composite graphite films, and the second uniform temperature liquid cooling plate is double-sided composite graphite film, the liquid cooling plate used is an assembled liquid cooling plate, the water inlet and outlet are connected to the liquid cooling plate body through buckling and sealed with a sealing ring, the material used for the liquid cooling plate is 3003 aluminum alloy with a thermal conductivity of 193 W / (m·K) and a thickness of 30 mm, the gradient hot pressing process is divided into two stages, the first stage hot pressing process has a hot pressing pressure of 30 Psi and a hot pressing temperature of 90°C, and the second stage hot pressing process has a hot pressing pressure of 80 Psi and a hot pressing temperature of 90°C;

[0039] S03, first power chip layer installation: the first power chip layer 105 is attached to the fiber-reinforced phase change layer 104 obtained in S01, and then the obtained structure is installed at the designed position on one side surface of the uniform temperature film 103 of the first uniform temperature liquid cooling plate obtained in S02. The first power chip layer 105 is a MOSFET power chip, each chip has an average heat dissipation power of 28 W, and the size is 20x28 mm;

[0040] S04, second uniform temperature liquid cooling plate installation: the second uniform temperature liquid cooling plate obtained in S02 is installed on the exposed fiber-reinforced phase change layer 104 above the first power chip layer 105 obtained in S03, and the second power chip layer 106 is a MOSFET power chip, each chip has an average heat dissipation power of 28 W, and the size is 20x28 mm, and there are 6 chips in each layer;

[0041] S05, layer-by-layer stacking: repeat the steps of S03 and S04 to obtain a stacked structure of chip layers and liquid cooling plates with 2 layers of power chips and 3 layers of uniform temperature liquid cooling plates;

[0042] S06, fastening structure installation: the structure obtained in S05 is heated and pressurized in the direction perpendicular to the chip surface for a period of time, and then the pressure is removed after mechanical fastening is performed at the reserved position on the liquid cooling plate surface. The heating temperature is 90°C, the pressurizing pressure is 40 Psi, and the pressurizing time is 3 min. The fastening structure 108 is a bolt and nut fastening structure with a tensile strength of 110 MPa and a temperature resistance of 160°C.

[0043] S07, flow channel connection: connect the external liquid cooling pipeline 107 to each layer of liquid cooling plate in the structure obtained in S06, and then pass in the cooling liquid and work.

[0044] Comparative Example

[0045] The liquid cooling plate without composite uniform temperature film is used, and the single-layer chip is connected to the single-layer liquid cooling plate (first liquid cooling plate) through a commercial thermal conductive pad with a thermal conductivity of 4 W / (m·K) and dissipates heat.

[0046] S01, first power chip layer installation: the first power chip layer 105 is single-sided mounted with a commercial thermal pad with a thermal conductivity of 4 W / (m·K), and then the obtained structure is installed to the first liquid cooling plate surface design position, wherein the thermal pad is connected with the liquid cooling plate body, the first power chip layer 105 is a MOSFET power chip, the average heat dissipation power of each chip is 28 W, the size is 20*28 mm, the used liquid cooling plate is an assembled liquid cooling plate, the inlet and outlet are connected with the liquid cooling plate body through buckling and sealed with a sealing ring, the material of the liquid cooling plate is 3003 aluminum alloy, the thermal conductivity is 193 W / (m·K), and the thickness is 30 mm;

[0047] S02, fastening structure installation: the obtained structure in S01 is heated and pressurized in the direction perpendicular to the chip surface, and the pressure is removed after mechanical fastening in the reserved position on the surface of the liquid cooling plate, the heating temperature is 90℃, the pressure is 40Psi, and the pressure time is 3min, the fastening structure 108 is a bolt and nut fastening structure, the tensile strength is 110MPa, and the temperature resistance is 160℃;

[0048] S03, flow channel connection: the external liquid cooling pipeline 107 is connected with the liquid cooling plate in the structure obtained in S02, the cooling liquid is passed in and works.

[0049] Table 1 main parameters and test results in examples and comparative examples

[0050]

[0051] The above examples and comparative examples are tested, and the test parameters and results are shown in Table 1. When the average heat power dissipation of the chip is 28 W, the same type of liquid cooling plate is used for liquid cooling heat dissipation, the cooling liquid flow rate is 1 m / s, the chip numbers in the first power chip layer and the second power chip layer in the examples are shown in Table 1, and the chip numbers in the first power chip layer in the comparative examples are shown in Table 1. Figure 4 Figure 5 The junction temperature of each chip in the first chip layer of the power module heat dissipation structure manufactured in the example is reduced by 21.0℃ compared with the comparative example. The temperature-time change curves of the chip with the highest junction temperature and the chip with the lowest junction temperature in the first chip layer of the example and the comparative example are shown in Figure 6

[0052] ​​Comparative analysis is conducted on the embodiment and the comparative example: in the comparative example, the heat generated by the first power chip layer 105 is only transferred to the first liquid cooling plate body in the longitudinal direction through the commercial heat-conducting gasket with a heat conductivity of 4W / (m·K) and is taken away by the cooling liquid in a local area; in the embodiment, the heat generated by the first power chip layer 105 is transferred to the first and second uniform temperature liquid cooling plate bodies in the longitudinal direction through the fiber-reinforced phase change layer with low thermal resistance and is evenly distributed by the uniform temperature film quickly, and is finally taken out by the cooling liquid of the two-layer liquid cooling plate, in addition, the embodiment can also simultaneously perform double-sided liquid cooling heat dissipation on the stacked structure of the multilayer chip. Obviously, the heat dissipation path in the embodiment is more than that in the comparative example, and the embodiment has better heat dissipation capacity. In summary, the manufacturing method provided by the embodiment can be used to prepare the heat dissipation structure with high heat dissipation capacity.

[0053] Although the present application has been described with reference to typical embodiments, it is to be understood that the terms used are illustrative and not restrictive. Since the present application can be embodied in many different forms without departing from the spirit or essential characteristics thereof, it is understood that the above-described embodiments are not limited to any of the foregoing details but are susceptible to modification within the scope and spirit of the appended claims. Accordingly, all changes coming within the meaning and equivalency of the claims are intended to be embraced therein.

Claims

1. A manufacturing method of a power module heat dissipation structure, characterized by, The structure comprises: a first uniform temperature liquid cooling plate...an nth uniform temperature liquid cooling plate, an nth+1 uniform temperature liquid cooling plate, a fiber reinforced phase change layer, a first power chip layer...an nth-1 power chip layer, an nth power chip layer, a fastening structure, a liquid cooling pipeline, wherein n≥1, and n is an integer, and the manufacturing steps comprise: S01, fiber reinforced phase change layer preparation: obtain a gasket-shaped heat-conducting phase change material through mechanical stirring, centrifugal bubble removal and calendering process, place the heat-conducting fiber cloth horizontally between the two gasket-shaped heat-conducting phase change material layers, and obtain the fiber reinforced phase change layer through gradient calendering process; S02, the uniform temperature liquid cooling plate is prepared: using the mounting process, screen printing process or dispensing process to composite the low thermal resistance interface material with the liquid cooling plate, then connecting the uniform temperature film with the low thermal resistance interface material through the roll-to-roll film coating equipment, and placing the obtained structure as a whole in the press to perform gradient heat pressing, obtaining the uniform temperature liquid cooling plate after pressure maintaining for a period of time, the material used before heat pressing is the low thermal resistance interface material, the low thermal resistance interface material forms the low thermal resistance interface layer structure after heat pressing, the in-plane thermal conductivity of the film material used is greater than 200 W / (m·K), the thickness is less than 100 µm, and the film material contains one or more of metal, silicon carbide, diamond, carbon nanotube, graphene, graphite nanosheet, graphite, carbon fiber and ceramic fiber, and the thermal resistance of the low thermal resistance interface layer is lower than 0.1 ℃·cm under 50 Psi pressure 2 / W, the low thermal resistance interface material is one or more of the heat-conducting gel, the heat-conducting phase change material, the heat-conducting grease and the heat-conducting gasket; S03, first power chip layer installation: double-sided mount the first power chip layer on the fiber reinforced phase change layer obtained in S01, and then install the obtained structure to the designed position on one side surface of the uniform film of the first uniform temperature liquid cooling plate obtained in S02; S04, second uniform temperature liquid cooling plate installation: install the second uniform temperature liquid cooling plate prepared in S02 on one side of the fiber reinforced phase change layer exposed on the first power chip layer obtained in S03; S05, layer-by-layer stacking: repeat the steps S03 and S04 to obtain a stacked structure with n layers of power chips and n+1 layers of uniform temperature liquid cooling plates; S06, fastening structure installation: heat the structure obtained in S05 and press in the direction perpendicular to the chip surface, maintain for a period of time, and then remove the pressure after mechanical fastening is performed on the reserved position on the liquid cooling plate surface; S07, flow channel connection: connect the liquid cooling pipeline with each layer of liquid cooling plates in the structure obtained in S06, input cooling liquid and work, The liquid cooling plate of the S02 step comprises a first liquid cooling plate...an nth liquid cooling plate and an nth+1 liquid cooling plate, the first liquid cooling plate and the nth+1 liquid cooling plate are both single-sidedly compounded with a uniform film, the liquid cooling plates between the first liquid cooling plate and the nth+1 liquid cooling plate are both double-sidedly compounded with a uniform film, n≥1, the liquid cooling plate is one or more of a blow-molded liquid cooling plate, a stamping liquid cooling plate and an assembled liquid cooling plate, the connection method of the water inlet and the water outlet of the liquid cooling plate with the main body of the liquid cooling plate is one or more of welding, buckle connection, gasket sealing, screw connection, interference fit and sealant filling, the welding mode is friction stir welding or brazing, the thermal conductivity of the material used for the main body of the liquid cooling plate is greater than 20 W / (m·K), and the material comprises one or more of copper alloy, aluminum alloy, copper-based composite material, aluminum-based composite material, graphite, heat-conductive plastic, alumina ceramic, aluminum nitride ceramic, silicon nitride ceramic, zirconium oxide ceramic and boron nitride ceramic, and the thickness range is 0.1mm-50mm.

2. The production method according to claim 1, characterized by The thermal conductivity of the gasket-shaped heat-conducting phase change material of the S01 step is greater than 6 W / (m·K), and the thermal resistance is less than 0.1 ℃·cm under 50 Psi pressure 2 / W, the insulation strength is greater than 2 kV / mm, the thickness is less than 200 µm, and the heat-conducting filler is a graded powder of silver-coated copper powder and diamond powder, the particle size range of the silver-coated copper powder is 1~12 µm, the particle size range of the diamond powder is 0.01~2 µm, the phase change material has a phase change latent heat greater than 200 J / g, and includes one or more of paraffin, polyethylene glycol, silicone wax, polyethylene wax, polypropylene wax, Fischer-Tropsch wax, polyester wax, AMS wax, and fatty acid, the heat-conducting fiber cloth of the S01 step is made of heat-conducting fibers, the thermal conductivity of the heat-conducting fibers is greater than 20 W / (m·K), the fiber diameter range is 6~20 µm, the mesh number of the heat-conducting fiber cloth is 140~600 mesh, the thickness range is 20~40 µm, and the heat-conducting fibers include one or more of carbon fibers, carbon nanotubes, graphene, aluminum oxide, boron nitride, silicon carbide, silver, copper, and aluminum.

3. The production method according to claim 1, characterized by The gradient calendering process of the S01 step is divided into two, three or four sections, the calendering interval of the first section is 200-400μm, the calendering interval of the last section is 60-140μm, the calendering interval of the intermediate section is between the first section and the last section and gradually decreases, and the roller temperature range of the calendering process is 70-120℃.

4. The production method according to claim 1, characterized by The gradient hot pressing process of the S02 step is divided into two sections, the hot pressing pressure of the first section is 10-40Psi, the hot pressing pressure of the second section is greater than 50Psi, and the temperature range of the two sections is 70-120℃.

5. The production method according to claim 1, characterized by The power chip of the S03, S04, S05 steps is one or more of a field effect tube, an insulated gate bipolar transistor, a triode, a thyristor, and a diode, and the chip has a heat dissipation power greater than 4W and a side length of 0.5mm to 50mm.

6. The production method according to claim 1, characterized by The temperature range of the S06 step is 60 to 140℃, and the pressure of the S06 step is 10 to 110Psi, and the pressure time of the S06 step is 1 to 20min.

7. The production method according to claim 1, wherein The material of the fastening structure of the S07 step is one or more of metal, resin, ceramic fiber, and composite material, and has a tensile strength greater than 100MPa and a temperature resistance greater than 150℃.

8. A power module heat dissipation structure, characterized by, The heat dissipation structure is prepared by the method of any one of claims 1 to 7, can meet the heat dissipation requirement of a total heat dissipation power greater than 60W of the chip, and has the function of simultaneously performing double-sided liquid cooling heat dissipation on a multi-layer chip stacking structure.

Images