Wafer position adjusting method, rapid annealing system and semiconductor manufacturing equipment

Abstract

The invention provides a wafer position adjusting method, a rapid annealing system and semiconductor manufacturing equipment, and relates to the technical field of semiconductor manufacturing. Comprising the following steps: arranging a plurality of uniformly distributed monitoring points in an edge area of a wafer, and equally dividing the monitoring points into a plurality of monitoring intervals; measuring the monitoring points to obtain monitoring parameters; according to the monitoring parameters, the annealing temperature value of each monitoring point is calculated; carrying out difference value calculation on the annealing temperature values in different monitoring intervals to obtain corresponding annealing temperature difference values; calculating the adjustment amount of the wafer according to the annealing temperature difference value; and feeding back the adjustment amount to a rapid thermal annealing machine to complete automatic adjustment of the wafer position. According to the invention, the position of the wafer can be automatically and accurately adjusted, and the electrical performance and yield of the device are remarkably improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to wafer positioning methods, rapid annealing systems, and semiconductor manufacturing equipment. Background Technology

[0002] As electronic devices continue to miniaturize and increase in performance, the integration density of semiconductor devices continues to rise. This makes devices increasingly sensitive to heat, while the requirements for thermal budgets are gradually decreasing. In semiconductor manufacturing processes, rapid thermal annealing (RTP) has become a key process in device manufacturing due to its ability to rapidly heat and cool wafers. RTP processes are widely used in steps such as ion diffusion and activation in well and source / drain regions, metal silicide formation, and high-temperature annealing of metal layers.

[0003] However, the high-temperature annealing process for metal silicide formation and metal layers is extremely sensitive to temperature. To ensure process quality, the thermal annealing equipment needs to achieve extremely high temperature uniformity within the wafer, typically within ±2°C. During the RTP process, the wafer is usually placed at the center of the edge ring. However, as production scales up and the number of wafers increases, the wafer's position on the edge ring may shift. This shift significantly affects the temperature uniformity of the wafer edge region, severely impacting the device's electrical performance and yield.

[0004] Currently, the industry mainly relies on equipment engineers to manually adjust machine parameters based on experience during preventative maintenance to resolve offset issues. However, with the increasing number of wafers, especially during preventative maintenance, frequent manual adjustments not only consume a lot of manpower and time but are also susceptible to human factors, resulting in a significant chance that the wafers will still be in an offset position, affecting the electrical performance and yield of the devices. Summary of the Invention

[0005] This invention mainly provides a substrate thin film preparation method and preparation equipment to solve the technical problems mentioned in the background art, such as frequent manual adjustments not only consuming a lot of manpower and time, but also being easily affected by human factors, resulting in a high probability that the wafer is still in an off-center position, affecting the electrical performance and yield of the device.

[0006] The technical solution adopted by the present invention to solve the above-mentioned technical problems is as follows: This application provides a wafer position adjustment method, comprising the following steps: setting multiple uniformly distributed monitoring points in the edge region of the wafer, and dividing the monitoring points into multiple monitoring intervals; measuring the monitoring points to obtain monitoring parameters; calculating the annealing temperature value of each monitoring point based on the monitoring parameters; calculating the difference between the annealing temperature values ​​in different monitoring intervals to obtain the corresponding annealing temperature difference; calculating the adjustment amount of the wafer based on the annealing temperature difference; and feeding the adjustment amount back to a rapid thermal annealing machine to complete the automatic adjustment of the wafer position.

[0007] Optionally, the method for calculating the annealing temperature value of each monitoring point includes: obtaining the thickness data of the monitoring point and calculating the annealing temperature value from a first relational model based on the thickness data; or, obtaining the sheet resistance data of the monitoring point and calculating the annealing temperature value from a second relational model based on the sheet resistance data.

[0008] Optionally, the first relationship model is obtained through an established regression model; wherein, the formula of the first relationship model is: T=aM1+c; T is the annealing temperature value, M1 is the thickness data, a is a constant greater than 0, and c is a constant greater than 0; the second relationship model is obtained through an established regression model; wherein, the formula of the second relationship model is: T=bM2+c, T is the annealing temperature value, M2 is the sheet resistance data, b is a constant less than 0, and c is a constant greater than 0.

[0009] Optionally, the method for calculating the annealing temperature difference is as follows: calculate the average annealing temperature of each monitoring interval; calculate the difference between the average annealing temperatures of different monitoring intervals to obtain the corresponding annealing temperature difference; and calculate the adjustment direction and adjustment amount of the wafer based on the annealing temperature difference.

[0010] Optionally, the method for calculating the adjustment amount includes: establishing a third relationship model between the annealing temperature difference and the adjustment amount, with the formula: H=c∆T; where H is the adjustment amount, ∆T is the annealing temperature difference, and c is a constant greater than 0; and using the third relationship model, calculating the adjustment amount of the wafer position from the annealing temperature difference.

[0011] Optionally, setting multiple uniformly distributed monitoring points in the edge region of the wafer includes: uniformly distributing the monitoring points in an annular region 3-10 mm away from the edge of the wafer.

[0012] Optionally, the monitoring point is divided into multiple monitoring intervals, including: the monitoring intervals are divided symmetrically according to the center of the wafer, each monitoring interval contains at least 2 monitoring points, and the corresponding diagonal intervals are located at 180° symmetrical positions.

[0013] This application also provides a rapid annealing system, employing the wafer position adjustment method described above, comprising: an edge ring for supporting the wafer; a rapid annealing machine, wherein the edge ring is disposed within the rapid annealing machine, the rapid annealing machine being used to place the wafer on the edge ring and perform a rapid annealing process on the wafer; a thickness measuring instrument or a sheet resistance measuring instrument for acquiring monitoring parameters at each of the monitoring points; a temperature calculation module for calculating the annealing temperature value at each of the monitoring points based on the monitoring parameters; a data analysis module for comparing the annealing temperature values ​​and calculating the wafer adjustment amount; and an advanced process control module for receiving the adjustment amount and feeding it back to the rapid annealing machine, so that the rapid annealing machine automatically adjusts the wafer position.

[0014] Optionally, the fast annealing system further includes: a relational model database storing the first relational model, the second relational model, and the third relational model; and an automatic calibration module for periodically calibrating the first relational model, the second relational model, and the third relational model.

[0015] This application also provides a semiconductor manufacturing apparatus that integrates the above-mentioned rapid thermal annealing system for wafer positioning and wafer internal temperature uniformity control.

[0016] This application provides a wafer position adjustment method, a rapid annealing system, and semiconductor manufacturing equipment. By monitoring the annealing temperature value of the wafer edge region, calculating the annealing temperature difference, and determining the adjustment amount based on the annealing temperature difference, the wafer position can be automatically and accurately adjusted, significantly improving the electrical performance and yield of the device. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a flowchart illustrating the wafer positioning adjustment method of this application; Figure 2 This is a schematic diagram of the distribution structure of monitoring points and monitoring intervals in the wafer edge region of this application.

[0019] Icons: 100 - wafer; 200 - monitoring range; 300 - monitoring point.

[0020] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0022] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this invention are only used to explain the relative positional relationship and movement of the components in a specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0023] In this application, unless otherwise expressly specified and limited, the terms "connection," "fixed," etc., should be interpreted broadly. For example, "fixed" can mean a fixed connection, a detachable connection, or an integral part; it can mean a mechanical connection or an electrical connection; it can mean a direct connection or an indirect connection through an intermediate medium; it can mean the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0024] Furthermore, if the embodiments of this application involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the meaning of "and / or" throughout the text includes three parallel solutions; for example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed in this application.

[0025] In existing technologies, frequent manual adjustments not only consume significant manpower and time but are also susceptible to human error, resulting in a high probability that the wafer will remain misaligned, affecting the electrical performance and yield of the device. To address these issues, the embodiments of this application refer to... Figures 1 to 2 The following technical solutions are provided to overcome the above problems.

[0026] Please refer to Figures 1 to 2 This application provides a wafer position adjustment method, including the following steps: setting multiple uniformly distributed monitoring points 300 in the edge region of wafer 100, and dividing the monitoring points 300 into multiple monitoring intervals 200; measuring the monitoring points 300 to obtain monitoring parameters; calculating the annealing temperature value of each monitoring point 300 based on the monitoring parameters; calculating the difference between the annealing temperature values ​​in different monitoring intervals 200 to obtain the corresponding annealing temperature difference; calculating the adjustment amount of wafer 100 based on the annealing temperature difference; and feeding the adjustment amount back to a rapid thermal annealing machine to complete the automatic adjustment of the wafer 100 position.

[0027] Specifically, monitoring points 300 are evenly distributed in the edge region of wafer 100 and divided into multiple monitoring intervals 200. Monitoring parameters are obtained by measuring the monitoring points 300. The annealing temperature value of each monitoring point 300 is calculated based on the monitoring parameters. The annealing temperature difference is calculated by comparing the annealing temperature values ​​of different monitoring intervals 200. The adjustment amount of wafer 100 is calculated based on the difference and fed back to the rapid thermal annealing machine to automatically adjust the position of wafer 100.

[0028] Furthermore, 12 monitoring points 300 can be evenly distributed at a distance of 5 mm from the edge of wafer 100. These monitoring points 300 are evenly distributed to ensure comprehensive monitoring of the temperature at the edge of wafer 100. The 12 monitoring points 300 are divided into 6 monitoring intervals 200, each containing 2 monitoring points 300. The monitoring intervals 200 are symmetrically divided along the center of wafer 100, with corresponding diagonal intervals located at 180° symmetrical positions. The thickness data of each monitoring point 300 is measured using a thickness gauge. Based on the thickness data, the annealing temperature value of the monitoring point 300 is calculated, and the average annealing temperature value of each monitoring interval 200 is calculated. For example, monitoring interval 200A contains monitoring points 3001 and 3002, and its average temperature is (T1+T2) / 2=(20+22) / 2=21℃. The temperature values ​​of different monitoring intervals 200 are then compared to obtain the annealing temperature difference. For example, the temperature difference between monitoring intervals 200A and 200B is ΔT = 24 - 21 = 3℃. Further, an adjustment amount is calculated based on the annealing temperature difference and fed back to the advanced process control module of the rapid thermal annealing machine. Upon receiving the adjustment amount, the advanced process control module automatically moves wafer 100 in the opposite direction to monitoring interval 200B through the machine's mechanical adjustment system.

[0029] This application provides a wafer position adjustment method. By monitoring the annealing temperature value of the edge region of wafer 100, calculating the annealing temperature difference, and determining the adjustment amount based on the annealing temperature difference, the wafer 100 position can be automatically and accurately adjusted, significantly improving the electrical performance and yield of the device.

[0030] In one embodiment, the method for calculating the annealing temperature value of each of the monitoring points 300 includes: acquiring thickness data of the monitoring point 300, and calculating the annealing temperature value from a first relational model based on the thickness data; or, acquiring sheet resistance data of the monitoring point 300, and calculating the annealing temperature value from a second relational model based on the sheet resistance data.

[0031] Specifically, a high-precision thickness gauge was used to measure the thickness data at each monitoring point 300 in the edge region of wafer 100. The instrument was calibrated before measurement to ensure data accuracy. A first relationship model between thickness and annealing temperature was established, and the measured thickness data was substituted into the model to calculate the annealing temperature value at each monitoring point 300.

[0032] Alternatively, a sheet resistance meter can be used to measure the sheet resistance data at each monitoring point 300 in the edge region of wafer 100. The meter also needs to be calibrated to ensure measurement accuracy. Using the established second relationship model between sheet resistance and annealing temperature, the measured sheet resistance data is substituted into the model to calculate the annealing temperature value at each monitoring point 300.

[0033] Understandably, wafer 100 expands due to heat during annealing, causing a change in thickness. This thickness change is positively correlated with temperature change; the higher the temperature, the more pronounced the expansion of wafer 100 and the greater the increase in thickness. By measuring the thickness change of wafer 100, the annealing temperature can be indirectly reflected, establishing a linear relationship model between thickness and annealing temperature. Accurately measuring the thickness of wafer 100 at different annealing temperatures and using linear regression analysis to determine model parameters allows for the calculation of the annealing temperature from the thickness data.

[0034] Sheet resistance is a crucial electrical parameter of wafer 100 materials, closely related to carrier concentration and mobility. Temperature variations affect both carrier concentration and mobility in wafer 100 materials, consequently altering sheet resistance. Generally, increased temperature decreases carrier mobility, leading to increased sheet resistance; the two are inversely correlated. A linear relationship model between sheet resistance and annealing temperature was established. By accurately measuring the sheet resistance of wafer 100 at different annealing temperatures and using linear regression analysis to determine model parameters, the annealing temperature can be calculated from the sheet resistance data.

[0035] In one embodiment, the first relationship model is obtained through an established regression model; wherein, the formula of the first relationship model is: T=aM1+c; T is the annealing temperature value, M1 is the thickness data, a is a constant greater than 0, and c is a constant greater than 0; the second relationship model is obtained through an established regression model; wherein, the formula of the second relationship model is: T=bM2+c; T is the annealing temperature value, M2 is the sheet resistance data, b is a constant less than 0, and c is a constant greater than 0.

[0036] Specifically, wafers 100 of different thicknesses were measured at known annealing temperatures, and multiple sets of thickness data (M1) and their corresponding annealing temperature values ​​(T) were collected. Using the collected data, a linear regression method was used to establish a linear relationship model between thickness and annealing temperature, T=aM1+c, to obtain the model parameters a and c, where a and c are both constants greater than 0, thereby enabling the calculation of annealing temperature from thickness data.

[0037] Similarly, wafers 100 with different sheet resistances were measured at known annealing temperatures, and multiple sets of sheet resistance data (M2) and their corresponding annealing temperature values ​​(T) were collected. Using the collected data, a linear regression method was used to establish a linear relationship model between sheet resistance and annealing temperature, T=bM2+c, to obtain the model parameters b and c, where b is a constant less than 0 and c is a constant greater than 0, thus enabling the calculation of annealing temperature from sheet resistance data.

[0038] In one embodiment, the method for calculating the annealing temperature difference is as follows: calculate the average annealing temperature of each monitoring interval 200; calculate the difference between the average annealing temperatures of different monitoring intervals 200 to obtain the corresponding annealing temperature difference; and calculate the adjustment direction and adjustment amount of the wafer 100 based on the annealing temperature difference.

[0039] Specifically, the annealing temperature values ​​of each monitoring point 300 within each monitoring interval 200 are obtained. These temperature values ​​are calculated using thickness data or sheet resistance data from previous steps. The average annealing temperature of each monitoring interval 200 is obtained by averaging the annealing temperature values ​​within that monitoring interval 200. For example, if monitoring interval 200A includes monitoring points 3001 and 3002, with annealing temperatures T1 and T2 respectively, then the average temperature of interval A is (T1+T2) / 2.

[0040] Compare the average annealing temperature values ​​between different monitoring intervals (200°C) to identify temperature differences. For example, compare the average temperature values ​​of interval A and interval B. Calculate the temperature difference between different monitoring intervals (200°C). For example, if the average temperature of interval A is T... A The average temperature of interval B is T. BThen the temperature difference ΔT = TA − TB.

[0041] The direction of wafer 100's offset is determined based on the direction of the temperature difference. For example, if the temperature in monitoring zone 200A is higher than that in monitoring zone 200B, then wafer 100 will offset towards zone A. The specific amount of adjustment required for wafer 100 is calculated based on the magnitude of the temperature difference and a pre-defined relationship model.

[0042] It should be noted that, in an ideal annealing process, the temperature of all regions of wafer 100 should remain uniform, especially within the symmetrically distributed monitoring zones 200, where temperature differences should be minimal. When wafer 100 shifts position on the edge ring, it causes changes in the thermal environment of each monitoring zone 200, resulting in temperature differences. For example, if wafer 100 shifts to one side, the temperature of the monitoring zone 200 on that side will differ from the temperature of the zone on the opposite side.

[0043] In one embodiment, the method for calculating the adjustment amount includes: establishing a third relationship model between the annealing temperature difference and the adjustment amount, with the formula: H=c∆T; where H is the adjustment amount, ∆T is the annealing temperature difference, and c is a constant greater than 0; and using the third relationship model, calculating the adjustment amount at position 100 of the wafer from the annealing temperature difference.

[0044] Specifically, the value of the adjustment coefficient c is determined based on equipment and process experience. Typically, multiple sets of known temperature differences and corresponding adjustment values ​​need to be collected, and linear regression analysis is performed to determine the optimal value of c. First, the annealing temperature difference (ΔT) between different monitoring intervals of 200 is measured and calculated. The calculated temperature difference is then substituted into the third relationship model H=cΔT to calculate the adjustment amount (H) at position 100 on the wafer.

[0045] It should be noted that the larger the temperature difference, the greater the required adjustment, and the two are directly proportional. The adjustment coefficient c reflects the degree of influence of the temperature difference on the adjustment amount. It can be calibrated based on factors such as the mechanical response characteristics of the equipment, the thermal expansion coefficient of the wafer 100, and process parameters.

[0046] In one embodiment, setting multiple uniformly distributed monitoring points in the edge region of the wafer includes: uniformly distributing the monitoring points in an annular region 3-10 mm away from the edge of the wafer.

[0047] Specifically, the edge of wafer 100 is a critical area that is easily affected by the placement position, resulting in uneven temperature. By selecting an annular area of ​​appropriate width and evenly distributing monitoring points 300, the edge temperature changes can be captured comprehensively, and the monitoring data can be avoided from being too close to the edge or center of wafer 100, which would make the monitoring data inaccurate or insufficiently representative.

[0048] Understandably, a reasonable distribution of 300 monitoring points ensures that the measured data accurately reflects the temperature conditions of the wafer edge region, providing reliable information for adjustment calculations and improving the effectiveness of the entire adjustment method.

[0049] In one embodiment, the monitoring point is divided into multiple monitoring intervals, including: the monitoring interval 200 is divided symmetrically according to the center of the wafer 100, each monitoring interval 200 contains at least 2 monitoring points 300, and the corresponding diagonal intervals are located at 180° symmetrical positions.

[0050] Specifically, in the rapid thermal annealing process, to accurately monitor the temperature of wafer 100, monitoring intervals 200 are first divided according to the symmetry of the wafer 100 center. Each interval contains at least two monitoring points 300, and the diagonal intervals are at a 180° symmetrical position. In other words, the center of wafer 100 is first determined, and the surrounding area is divided into several monitoring intervals 200 with the center as the symmetrical point. The sum of the angles between the line connecting each monitoring interval 200 to the center and the line connecting the diagonal monitoring interval 200 to the center is 180°. Within each monitoring interval 200, at least two monitoring points 300 are evenly arranged according to the principle of equidistant spacing along the edge of wafer 100 to monitor the edge temperature from all directions.

[0051] It should be noted that when wafer 100 is heated in a rapid thermal annealing machine, the edge ring provides support and the heating source is usually centrally located. When wafer 100 is ideally positioned, the distances from each point to the heat source are symmetrical, resulting in a symmetrical temperature distribution. If wafer 100 is offset, the temperature difference at symmetrical positions is significant. By dividing the wafer into symmetrical intervals and placing multiple temperature measurement points along the center, we can accurately measure the edge temperature and determine the wafer 100 offset based on the temperature difference between intervals, thus determining the adjustment direction.

[0052] This application embodiment also provides a rapid annealing system, applying the wafer 100 position adjustment method described above, comprising: an edge ring for supporting the wafer 100; a rapid annealing machine, wherein the edge ring is disposed within the rapid annealing machine, the rapid annealing machine being used to place the wafer 100 on the edge ring and perform a rapid annealing process on the wafer 100; a thickness measuring instrument or a sheet resistance measuring instrument for acquiring monitoring parameters of each of the monitoring points 300; a temperature calculation module for calculating the annealing temperature value of each of the monitoring points 300 based on the monitoring parameters; a data analysis module for comparing the annealing temperature values ​​and calculating the adjustment amount of the wafer 100; and an advanced process control module for receiving the adjustment amount and feeding it back to the rapid annealing machine, so that the rapid annealing machine automatically adjusts the position of the wafer 100.

[0053] Specifically, the edge ring supports wafer 100, ensuring its stability during annealing. The rapid annealing machine places wafer 100 on the edge ring for rapid annealing. The machine has an internal heating system for rapid heating and cooling to achieve the annealing process. A thickness gauge or sheet resistance meter acquires thickness or sheet resistance data from monitoring points 300 on the edge of wafer 100, providing basic parameters for subsequent annealing temperature calculations. The temperature calculation module calculates the annealing temperature value for each monitoring point 300 based on the monitoring parameters, converting the parameters into temperature information. The data analysis module compares and analyzes the annealing temperature values ​​at each monitoring point 300, calculating the annealing temperature difference between different monitoring intervals 200 of wafer 100, further determining the adjustment amount for wafer 100, including the adjustment direction and magnitude.

[0054] Advanced process control module: Receives adjustment information from the data analysis module and feeds it back to the rapid annealing machine. The machine then automatically adjusts the position of wafer 100 to achieve precise correction of wafer 100 position.

[0055] In one embodiment, the fast annealing system further includes: a relational model database storing the first relational model, the second relational model, and the third relational model; and an automatic calibration module for periodically calibrating the first relational model, the second relational model, and the third relational model.

[0056] Specifically, the relational model database provides a reliable model foundation for the system, while the automatic calibration module ensures that these models can consistently and accurately reflect the physical and electrical properties during the wafer 100 annealing process. Regular calibration reduces model errors and improves the accuracy of annealing temperature and adjustment calculations, thereby enhancing the precision of wafer 100 positioning.

[0057] Furthermore, the automatic calibration module's periodic maintenance function enhances system reliability. Even during long-term operation, the system maintains stable performance, reducing production accidents and product quality issues caused by model deviations.

[0058] Understandably, semiconductor manufacturing processes are constantly evolving and changing. The combination of relational model databases and automatic calibration modules enables rapid annealing systems to better adapt to these changes. The system can update its models in a timely manner to meet the requirements of new processes and materials, extending the system's lifespan.

[0059] This application also provides a semiconductor manufacturing apparatus that integrates the above-mentioned rapid thermal annealing system for positioning wafer 100 and controlling the internal temperature uniformity of wafer 100.

[0060] Specifically, integrating the rapid thermal annealing system into the overall architecture of semiconductor manufacturing equipment allows it to automatically handle wafer positioning and temperature uniformity control during equipment operation, seamlessly connecting with other process stages to ensure efficient and high-quality manufacturing. This enhances the intelligence and automation of semiconductor manufacturing equipment, strengthens its high-precision temperature control capabilities, meets the increasingly stringent manufacturing requirements of semiconductor devices, and helps improve the equipment's market competitiveness and enterprise production efficiency.

[0061] The above description is merely a specific implementation of the embodiments of this application, but the protection scope of the embodiments of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the embodiments of this application should be covered within the protection scope of the embodiments of this application. Therefore, the protection scope of the embodiments of this application should be determined by the protection scope of the claims.

Claims

1. A wafer positioning adjustment method, characterized in that, Includes the following steps: Multiple evenly distributed monitoring points are set in the edge region of the wafer, and the monitoring points are equally divided into multiple monitoring intervals; The monitoring points are measured to obtain the monitoring parameters; Based on the monitoring parameters, calculate the annealing temperature value for each monitoring point; The difference between the annealing temperature values ​​in different monitoring intervals is calculated to obtain the corresponding annealing temperature difference. The adjustment amount of the wafer is calculated based on the annealing temperature difference; The adjustment amount is fed back to the rapid thermal annealing machine to complete the automatic adjustment of the wafer position.

2. The wafer position adjustment method according to claim 1, characterized in that, The method for calculating the annealing temperature value at each of the monitoring points includes: Obtain the thickness data of the monitoring point, and calculate the annealing temperature value from the first relationship model based on the thickness data; Alternatively, obtain the sheet resistance data of the monitoring point, and calculate the annealing temperature value from the second relationship model based on the sheet resistance data.

3. The wafer position adjustment method according to claim 2, characterized in that, The first relationship model was obtained through the established regression model; The formula for the first relational model is: T = aM1 + c; T is the annealing temperature value, M1 is the thickness data, a is a constant greater than 0, and c is a constant greater than 0. The second relationship model was obtained through the established regression model; The formula for the second relational model is: T = bM² + c; T is the annealing temperature value, M2 is the sheet resistance data, b is a constant less than 0, and c is a constant greater than 0.

4. The wafer position adjustment method according to claim 1, characterized in that, The method for calculating the annealing temperature difference is as follows: Calculate the average annealing temperature for each of the monitoring intervals; The difference between the average annealing temperatures of different monitoring intervals is calculated to obtain the corresponding annealing temperature difference. The adjustment direction and adjustment amount of the wafer are calculated based on the annealing temperature difference.

5. The wafer position adjustment method according to claim 4, characterized in that, The method for calculating the adjustment amount includes: The formula for establishing a third relationship model between the annealing temperature difference and the adjustment amount is: H = c∆T; H is the adjustment amount, ∆T is the annealing temperature difference, and c is a constant greater than 0; The adjustment amount of the wafer position is calculated from the annealing temperature difference using the third relationship model.

6. The wafer position adjustment method according to claim 1, characterized in that, The method of setting multiple evenly distributed monitoring points in the edge region of the wafer includes: The monitoring points are evenly distributed within a ring-shaped area 3-10 mm from the edge of the wafer.

7. The wafer position adjustment method according to claim 6, characterized in that, The monitoring points are divided into multiple monitoring intervals, including: The monitoring intervals are divided symmetrically according to the center of the wafer, and each monitoring interval contains at least two monitoring points, with the corresponding diagonal intervals located at 180° symmetrical positions.

8. A rapid annealing system, characterized in that, The wafer positioning adjustment method according to any one of claims 1-7 includes: Edge rings are used to support the wafers; A rapid annealing machine, wherein the edge ring is disposed within the rapid annealing machine, and the rapid annealing machine is used to place the wafer on the edge ring and perform a rapid annealing process on the wafer; A thickness measuring instrument or a sheet resistance measuring instrument is used to obtain the monitoring parameters of each of the monitoring points; A temperature calculation module is used to calculate the annealing temperature value of each monitoring point based on the monitoring parameters. The data analysis module is used to compare the annealing temperature values ​​and calculate the adjustment amount of the wafer. An advanced process control module is used to receive the adjustment amount and feed it back to the rapid annealing machine so that the rapid annealing machine can automatically adjust the wafer position.

9. The rapid annealing system according to claim 8, characterized in that, Also includes: A relational model database stores the first relational model, the second relational model, and the third relational model; An automatic calibration module is used to periodically calibrate the first relation model, the second relation model, and the third relation model.

10. Semiconductor manufacturing equipment, characterized in that, The system integrates the rapid thermal annealing system as described in claim 9, and is used for wafer positioning and control of temperature uniformity inside the wafer.

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