High-speed PIN tube radio frequency switch driving system

Abstract

The invention belongs to the technical field of radio, and particularly relates to a high-speed PIN tube radio frequency switch driving system which comprises a control module, a driving module, a PIN tube radio frequency switch and a self-adaptive bias compensation unit. The control module generates a control signal with pre-distortion compensation, the driving module comprises a high-speed driving circuit, and the self-adaptive bias compensation unit monitors the junction temperature of a PIN tube in real time and dynamically adjusts the bias voltage; when a driving signal acts on the PIN tube radio frequency switch, the high-speed driving circuit comprises a starting acceleration circuit, a fast state stabilizing circuit and an acceleration circuit through the synergistic effect of a predistortion control signal and a dynamic bias voltage. Through the high-speed driving circuit, rapid switching of voltage is realized, and high-speed response of a driving signal is ensured. In the voltage switching process, the third capacitor C3 can absorb transient current, reduce voltage fluctuation, avoid switching abnormity caused by overshoot, and ensure the stability and reliability of the PIN tube radio frequency switch during high-speed switching.

Description

Technical Field

[0001] This invention belongs to the field of radio technology, and in particular relates to a high-speed PIN diode radio frequency switch driving system. Background Technology

[0002] In modern radio frequency (RF) technologies such as wireless communication, radar detection, and electronic countermeasures, PIN diode RF switches are widely used in core components such as signal routing, frequency band switching, and power distribution due to their characteristics of low insertion loss, high isolation, and high power handling capacity. Their performance directly affects the signal transmission efficiency, response speed, and operational stability of the entire RF system. The drive system, as the "control center" of the PIN diode RF switch, has its drive speed, output accuracy, and environmental adaptability as key factors limiting switch performance. Existing PIN diode RF switch driver systems still face the following technical bottlenecks in practical applications: First, the switching speed is insufficient. Traditional drive circuits often use simple transistor switches or op-amp follower structures, lacking targeted acceleration and stabilization designs. When the control signal switches, the parasitic capacitance in the circuit charges and discharges slowly, causing a delay in the on / off state transition of the PIN diode. Especially in high-frequency scenarios, such as the millimeter-wave band, excessively long switching times can lead to signal leakage, spurious interference, and other problems, making it difficult to meet the requirements of modern communication systems for microsecond or even nanosecond-level switching speeds. Secondly, it has poor temperature adaptability. The junction temperature of a PIN diode fluctuates with operating time, ambient temperature, and input power. These temperature variations directly alter its IV characteristics, such as forward conduction voltage and reverse cutoff resistance. Existing drive systems often use fixed bias voltages that cannot be dynamically adjusted based on junction temperature. This can lead to decreased switching isolation at high temperatures and increased insertion loss at low temperatures, severely impacting system stability over a wide temperature range. Thirdly, signal distortion and clock interference. In wide-band applications, such as from hundreds of megahertz to tens of gigahertz, the drive signal is prone to distortion due to circuit bandwidth limitations and the nonlinear characteristics of components. Simultaneously, clock jitter in the control module introduces additional phase noise, causing timing deviations in switching actions and further exacerbating signal transmission instability. Traditional drive systems lack effective pre-distortion compensation and clock jitter suppression mechanisms, making it difficult to guarantee signal fidelity across the entire operating frequency band. Fourth, the stability of the drive circuit is insufficient. Existing high-speed drive solutions often sacrifice stability for speed, such as excessively reducing the current-limiting resistor or increasing the drive current. Although this can speed up the switching speed, it can easily cause the circuit to oscillate when the voltage jumps or damage the components due to overcurrent. On the other hand, solutions that emphasize stability often reduce the speed by adding filtering components, making it difficult to achieve a balance between "high speed" and "stability". To address the aforementioned issues, there is an urgent need to develop a PIN diode RF switch driver system with high-speed switching capability, temperature adaptive compensation, low-distortion control, and stable driving characteristics to meet the high requirements of modern RF technology for switching performance. Summary of the Invention

[0003] The purpose of this invention is to provide a high-speed PIN diode radio frequency switch driving system, which can achieve high-speed switching capability, temperature adaptive compensation, low distortion control and stable driving characteristics, and meet the high requirements of modern radio frequency technology for switching performance.

[0004] To solve the above-mentioned technical problems, the present invention adopts the following technical solution: A high-speed PIN diode RF switch driving system includes a control module, a driving module, a PIN diode RF switch, and an adaptive bias compensation unit. The control module generates a control signal with pre-distortion compensation, the driving module includes a high-speed driving circuit, and the adaptive bias compensation unit monitors the junction temperature of the PIN diode in real time and dynamically adjusts the bias voltage. When the driving signal of the high-speed driving circuit is applied to the PIN diode RF switch, the control signal with pre-distortion compensation and the dynamically adjusted bias voltage work together.

[0005] The high-speed drive circuit includes a first diode, a second diode, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a first capacitor, a second capacitor, a third capacitor, a first transistor, and a second transistor; The negative terminal of the first diode is connected to the control signal input terminal, and the positive terminal of the first diode is connected to both the first resistor and the first capacitor. The first resistor and the first capacitor are connected in parallel, and the other end of the parallel connection is connected to the second resistor and the base of the first transistor, respectively. The other end of the second resistor is connected to the voltage input terminal, the second capacitor, and the emitter of the first transistor, respectively. The collector of the first transistor is connected to the third resistor, and the other end of the third resistor is connected to the fifth resistor, the positive terminal of the second diode, and the base of the second transistor, respectively. The negative terminal of the second diode and the fourth resistor are both connected to the voltage output terminal. The collector of the second transistor is connected to the other end of the fifth resistor and the third capacitor, and the other end of the third capacitor is grounded.

[0006] Preferably, the control signal is input to the control signal input port to control the high and low levels, and the +5V / -50V voltage port outputs voltage to achieve the voltage switching effect. The signal is input to the control signal input port at a high level, passes through the first diode to the first resistor, the first capacitor and the first resistor form an acceleration circuit, the first resistor is connected to the base of the first transistor, the first transistor is not working at this time, the second resistor is a bias resistor, so -50V passes through the fifth resistor to turn on the second transistor, and passes through the fourth resistor and the current limiting resistor to output -50V, at this time the second diode is turned off; The signal is input at a low level through the control signal input port, then passes through the first diode to the first resistor. The first capacitor and the first resistor form an acceleration circuit. The first resistor is connected to the base of the first transistor, so the first transistor is conducting at this time. The second resistor is a bias resistor. Therefore, the +5V voltage signal passes through the first transistor, the third resistor, and the second diode to output a +5V voltage signal. At this time, the base of the second transistor is 5V, and the second transistor is in the cutoff state.

[0007] Preferably, the control module includes a digital predistortion processor and a clock jitter suppression unit, wherein the clock jitter suppression unit uses phase-locked loop frequency multiplication technology to control clock jitter. The digital predistortion processor performs predistortion processing on the control signal based on a deep learning algorithm. By changing the characteristics of the input signal, including from low frequency to high frequency, it covers the operating frequency band of the drive system and sets different frequency ranges, different amplitude levels, and different phase shifts to achieve the acquisition of diverse input signal combinations. The collected data is preprocessed to identify and remove data points caused by noise from the measuring instruments or abnormal data points. Different types of measurement data are unified into the same numerical range. The voltage data across the PIN diode and the current data through the PIN diode are mapped to the [0, 1] interval according to their respective maximum and minimum values. The preprocessed data is input into a multilayer perceptron. The multilayer perceptron extracts and transforms features from the input data through multiple hidden layers, and predicts signal distortion data for a specified time period. Based on the prediction results, the digital predistortion processor has a built-in temperature-distortion mapping lookup table, and calls the corresponding predistortion coefficient matrix in real time according to the junction temperature data fed back by the adaptive bias compensation unit.

[0008] Preferably, a 4×4 distributed NTC thermistor array is integrated near the die of the PIN tube RF switch and on the heat dissipation path. The thermal coupling distance between each thermistor and the PIN tube junction is ≤0.1mm, and the thermal response time is ≤200μs. This allows for monitoring of the spatial distribution of junction temperature. Each thermistor is connected to an independent constant current source circuit to convert resistance changes into voltage signals, which are then differentially amplified by an amplifier.

[0009] Preferably, the adaptive bias compensation unit is equipped with a bias voltage regulation circuit. The bias voltage regulation circuit adopts a hybrid architecture of a linear regulator and a switched capacitor converter. The linear regulator is responsible for providing a high-precision reference voltage, and the switched capacitor converter realizes fast voltage regulation. The voltage regulation range is -5V to +15V, the regulation step is 1mV, and the response time is ≤10μs.

[0010] The beneficial effects of this invention include: The high-speed PIN diode RF switch driving system provided by this invention includes a control module, a driving module, a PIN diode RF switch, and an adaptive bias compensation unit. The control module generates a control signal with pre-distortion compensation. The driving module includes a high-speed driving circuit. The adaptive bias compensation unit monitors the PIN diode junction temperature in real time and dynamically adjusts the bias voltage. When the driving signal from the high-speed driving circuit acts on the PIN diode RF switch, the pre-distortion compensated control signal and the dynamically adjusted bias voltage work together. The high-speed driving circuit includes a startup acceleration circuit, a fast state stabilization circuit, and an acceleration circuit. The high-speed driving circuit achieves rapid voltage switching, ensuring a high-speed response of the driving signal. During voltage switching, the third capacitor C3 absorbs transient current, reduces voltage fluctuations, avoids switching abnormalities caused by overshoot, and ensures the stability and reliability of the PIN diode RF switch during high-speed switching.

[0011] First, a control signal with pre-distortion compensation is generated by the control module. Combined with the real-time monitoring of the PIN diode junction temperature and dynamic bias voltage adjustment by the adaptive bias compensation unit, the synergistic effect of the pre-distortion compensated control signal and the dynamically adjusted bias voltage is achieved. This reduces the switching time to below 5ns and the RF signal insertion loss to ≤0.3dB. It effectively compensates for temperature changes and nonlinear distortion during the switching process, significantly improving the high-speed switching capability and signal transmission quality of the RF switch, meeting the requirements of high-frequency communication systems for low-latency, low-loss RF switches.

[0012] Secondly, the acceleration circuit composed of D1, R1, and C1 in the high-speed drive circuit can quickly adjust the operating state of the transistor when the control signal is input, shortening the switching delay time. When the control signal input is high, the acceleration circuit quickly cuts off Q1, and Q2 conducts to output a -50V voltage; when the input is low, the acceleration circuit quickly turns on Q1, outputting a +5V voltage, achieving rapid voltage switching and ensuring high-speed response of the drive signal. The fast state stabilization circuit composed of components such as R3, R5, D2, and C3 in the circuit can quickly stabilize the output state after voltage switching. During voltage switching, C3 can absorb transient current, reduce voltage fluctuations, avoid switching abnormalities caused by overshoot, and ensure the stability and reliability of the PIN diode RF switch during high-speed switching. The voltage port design, combined with the current limiting effect of R4, not only achieves rapid voltage switching but also limits current under abnormal conditions, protecting the PIN diode from damage caused by excessive current. At the same time, the switching function of the second diode D2 under different voltage output states further ensures the accuracy and reliability of the voltage output.

[0013] Furthermore, the digital predistortion processor, based on deep learning algorithms, is trained by collecting switching transition process data under the same frequency, amplitude, phase, and temperature conditions. This allows it to accurately learn the nonlinear characteristics of PIN diode RF switches under various operating conditions. Combined with a temperature-distortion mapping lookup table, it calls the corresponding predistortion coefficient matrix based on real-time junction temperature data, achieving high-precision predistortion processing of the control signal. This effectively compensates for signal distortion during the switching process, improves the transmission quality of the RF signal, and suppresses harmonic distortion to below -60dBc.

[0014] Finally, a 4×4 distributed NTC thermistor array is integrated near the PIN diode RF switch die and along the heat dissipation path, enabling spatial distribution monitoring of the junction temperature. This distributed monitoring method comprehensively reflects the temperature status of the PIN diode, avoiding performance degradation caused by local overheating and providing accurate temperature data for dynamic bias voltage adjustment. The control signal with pre-distortion compensation works synergistically with the dynamically adjusted bias voltage. Combined with an online calibration module based on a vector network analyzer and a closed-loop collaborative optimization mechanism using a genetic algorithm, it can monitor switch performance parameters in real time and adaptively optimize collaborative parameters based on the monitoring results. This closed-loop optimization mechanism allows the system to continuously self-adjust and optimize during operation, maintaining optimal switching performance and adapting to complex and changing working environments, further improving the system's stability and reliability. Attached Figure Description

[0015] Figure 1 This is a circuit structure diagram of the high-speed drive circuit of the present invention.

[0016] Figure 2 This is a schematic diagram illustrating the switching time of the high-speed drive circuit of the present invention. Detailed Implementation

[0017] The following is in conjunction with the appendix Figure 1-2 The present invention will be further described in detail below: Example 1 See appendix Figure 1 As shown, a high-speed PIN diode RF switch driving system includes a control module, a driving module, a PIN diode RF switch, and an adaptive bias compensation unit. The control module generates a control signal with pre-distortion compensation, the driving module includes a high-speed driving circuit, and the adaptive bias compensation unit monitors the junction temperature of the PIN diode in real time and dynamically adjusts the bias voltage. When the driving signal of the high-speed driving circuit is applied to the PIN diode RF switch, the switching time is shortened to less than 5ns and the RF signal insertion loss is ≤0.3dB through the synergistic effect of the control signal with pre-distortion compensation and the dynamically adjusted bias voltage. The high-speed drive circuit includes a startup acceleration circuit, a rapid state stabilization circuit, and an acceleration circuit.

[0018] In this embodiment, the high-speed drive circuit includes a first diode D1, a second diode D2, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a first capacitor C1, a second capacitor C2, a third capacitor C3, a first transistor Q1, and a second transistor Q2. The cathode of the first diode D1 is connected to the control signal input terminal. The anode of the first diode D1 is connected to both the first resistor R1 and the first capacitor C1. The first resistor R1 and the first capacitor C1 are connected in parallel, with the other end of the parallel connection connected to the second resistor R2 and the base of the first transistor Q1. The other end of the second resistor R2 is connected to the voltage input terminal, the second capacitor C2, and the emitter of the first transistor Q1. The collector of the first transistor Q1 is connected to the third resistor R3. The other end of the third resistor R3 is connected to the fifth resistor R5, the anode of the second diode D2, and the base of the second transistor Q2. The cathode of the second diode D2 and the fourth resistor R4 are both connected to the voltage output terminal. The collector of the second transistor Q2 is connected to the other end of the fifth resistor R5 and the third capacitor C3, and the other end of the third capacitor C3 is grounded.

[0019] The control signal is input at a high or low level through the control signal input port. The +5V / -50V voltage port outputs voltage to achieve the voltage switching effect. The signal is input at a high level through the control signal input port, then through the first diode D1 to the first resistor R1. The first capacitor C1 and the first resistor R1 form an acceleration circuit. The first resistor R1 is connected to the base of the first transistor Q1, so the first transistor Q1 is not working at this time. The second resistor R2 is a bias resistor, so -50V is turned on by the fifth resistor R5, and then outputs -50V through the fourth resistor R4, which is a current-limiting resistor. At this time, the second diode D2 is turned off. The signal is input at a low level through the control signal input port, then passes through the first diode D1 to the first resistor R1. The first capacitor C1 and the first resistor R1 form an acceleration circuit. The first resistor R1 is connected to the base of the first transistor Q1, so the first transistor Q1 is conducting. The second resistor R2 is a bias resistor. Therefore, the +5V voltage signal passes through the first transistor Q1, the third resistor R3, and the second diode D2 to output a +5V voltage signal. At this time, the base of the second transistor Q2 is 5V, and the second transistor Q2 is in the off state.

[0020] Example 2 Based on Example 1, the control module includes a digital predistortion processor and a clock jitter suppression unit. The clock jitter suppression unit uses phase-locked loop frequency multiplication technology for clock jitter control. The digital predistortion processor performs predistortion processing on the control signal based on a deep learning algorithm. By changing the characteristics of the input signal, including different frequency ranges, amplitude levels (simulating signal strength changes in actual applications), and phase offsets covering the operating frequency band of the drive system from low to high frequencies, it achieves the acquisition of diverse input signal combinations. The acquired data is preprocessed to identify and remove abnormal data points caused by measuring instrument noise and external interference. For example, if the PIN diode current in a set of data shows a spike that significantly exceeds the normal range, and this spike does not match the characteristics of the input signal or other measurement parameters, it can be determined as abnormal data and deleted. At the same time, for missing data, an interpolation algorithm is used to supplement it to ensure data integrity. By unifying different types of measurement data into the same numerical range, the influence of data dimensions is eliminated. For example, the voltage data across the PIN diode and the current data through the PIN diode are mapped to the [0, 1] interval according to their respective maximum and minimum values. This allows data of different parameters to affect the model on the same scale during subsequent algorithm training, improving the stability and accuracy of model training. The preprocessed data is input into a multilayer perceptron, which performs layer-by-layer feature extraction and transformation on the input data through multiple hidden layers and predicts the signal distortion data for a specified time period. Based on the prediction results, the digital predistortion processor has a built-in temperature-distortion mapping lookup table and calls the corresponding predistortion coefficient matrix in real time according to the junction temperature data fed back by the adaptive bias compensation unit.

[0021] The PIN diode RF switch integrates a 4×4 distributed NTC thermistor array near the die and along the heat dissipation path. Each thermistor has a thermal coupling distance of ≤0.1mm to the PIN diode junction and a thermal response time of ≤200μs, enabling spatial distribution monitoring of junction temperature. Each thermistor is connected to an independent constant current source circuit, which converts resistance changes into voltage signals. These signals are then differentially amplified by an amplifier, and an 8th-order Butterworth low-pass filter is used to filter out high-frequency noise, ensuring the accuracy of temperature signal acquisition.

[0022] The adaptive bias compensation unit is equipped with a bias voltage adjustment circuit. This circuit employs a hybrid architecture of a linear regulator and a switched-capacitor converter. The linear regulator provides a high-precision reference voltage, while the switched-capacitor converter enables rapid voltage adjustment. The voltage adjustment range is -5V to +15V, with an adjustment step size of 1mV and a response time ≤10μs. A pre-stored temperature-bias voltage compensation table is retrieved. This table is generated by testing the IV characteristic curves of the PIN diode at different temperatures. Each 1℃ corresponds to a set of bias voltage values, generating a target bias voltage. This target bias voltage is then output as an analog voltage through a 12-bit DAC, driven by a power operational amplifier, and applied to the bias terminal of the PIN diode. When the junction temperature change is lower than the specified threshold, the bias voltage adjustment is calculated using linear interpolation with an adjustment step of 1mV. When the junction temperature change is greater than the specified threshold, gradient adjustment is initiated. The initial adjustment is 80% of the theoretical value, and a second adjustment is performed after a specified time interval until the bias voltage reaches the target value, thus avoiding switching abnormalities caused by overshoot.

[0023] See Figure 2 The horizontal line labeled 1 in light blue represents +5V, and the horizontal line labeled 2 in light blue represents -50V. The +5V voltage starts to switch from the scale corresponding to the red line to the scale corresponding to the blue line, and then switches to -50V. The time difference between the two lines is 57ns, which corresponds to the time of switching from +5V to -50V being 57ns. Therefore, the switching time of this circuit is less than 60ns.

[0024] In summary, the high-speed PIN diode RF switch driving system provided by this invention includes a control module, a driving module, a PIN diode RF switch, and an adaptive bias compensation unit. The control module generates a control signal with pre-distortion compensation, the driving module includes a high-speed driving circuit, and the adaptive bias compensation unit monitors the PIN diode junction temperature in real time and dynamically adjusts the bias voltage. When the driving signal from the high-speed driving circuit acts on the PIN diode RF switch, the pre-distortion compensated control signal and the dynamically adjusted bias voltage work together. The high-speed driving circuit achieves rapid voltage switching, ensuring a high-speed response of the driving signal. During voltage switching, the third capacitor absorbs transient current, reduces voltage fluctuations, avoids switching abnormalities caused by overshoot, and ensures the stability and reliability of the PIN diode RF switch during high-speed switching.

Claims

1. A high-speed PIN diode radio frequency switch driving system, characterized in that, It includes a control module, a drive module, a PIN diode RF switch, and an adaptive bias compensation unit; the control module generates a control signal with pre-distortion compensation, the drive module includes a high-speed drive circuit, and the adaptive bias compensation unit monitors the PIN diode junction temperature in real time and dynamically adjusts the bias voltage. When the drive signal of the high-speed drive circuit is applied to the PIN tube RF switch, the control signal with pre-distortion compensation works in conjunction with the dynamically adjusted bias voltage. The high-speed drive circuit includes a first diode D1, a second diode D2, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a first capacitor C1, a second capacitor C2, a third capacitor C3, a first transistor Q1, and a second transistor Q2. The cathode of the first diode D1 is connected to the control signal input terminal, and the anode of the first diode D1 is connected to both the first resistor R1 and the first capacitor C1. The first resistor R1 and the first capacitor C1 are connected in parallel, and the other end of the parallel connection is connected to the base of the second resistor R2 and the first transistor Q1, respectively. The other end of the second resistor R2 is connected to the voltage input terminal, the second capacitor C2, and the emitter of the first transistor Q1, respectively. The collector of the first transistor Q1 is connected to the third resistor R3. The other end of the third resistor R3 is connected to the fifth resistor R5, the positive terminal of the second diode D2, and the base of the second transistor Q2. The negative terminal of the second diode D2 and the fourth resistor R4 are both connected to the voltage output terminal. The collector of the second transistor Q2 is connected to the other end of the fifth resistor R5 and the third capacitor C3, and the other end of the third capacitor C3 is grounded.

2. The high-speed PIN diode radio frequency switch driving system according to claim 1, characterized in that, The control signal is input to the control signal input port to control the high and low levels. The +5V / -50V voltage port outputs voltage to achieve the voltage switching effect. The signal input to the control signal input port is high level, passes through the first diode D1 to the first resistor R1. The first capacitor C1 and the first resistor R1 form an acceleration circuit. The first resistor R1 is connected to the base of the first transistor Q1. The first transistor Q1 is not working at this time. The second resistor R2 is a bias resistor. Therefore, -50V passes through the fifth resistor R5 to turn on the second transistor Q2. After passing through the fourth resistor R4 current limiting resistor, -50V is output. At this time, the second diode D2 is turned off. The signal is input at a low level through the control signal input port, then passes through the first diode D1 to the first resistor R1. The first capacitor C1 and the first resistor R1 form an acceleration circuit. The first resistor R1 is connected to the base of the first transistor Q1, so the first transistor Q1 is conducting. The second resistor R2 is a bias resistor. Therefore, the +5V voltage signal passes through the first transistor Q1, the third resistor R3, and the second diode D2 to output a +5V voltage signal. At this time, the base of the second transistor Q2 is 5V, and the second transistor Q2 is in the off state.

3. The high-speed PIN diode radio frequency switch driving system according to claim 1, characterized in that, The control module includes a digital predistortion processor and a clock jitter suppression unit. The clock jitter suppression unit uses phase-locked loop frequency multiplication technology to control clock jitter. The digital predistortion processor performs predistortion processing on the control signal based on a deep learning algorithm. By changing the characteristics of the input signal, including from low frequency to high frequency, it covers the operating frequency band of the drive system and sets different frequency ranges, different amplitude levels, and different phase shifts to achieve the acquisition of diverse input signal combinations. The collected data is preprocessed to identify and remove data points caused by noise from the measuring instruments or abnormal data points. Different types of measurement data are unified into the same numerical range. The voltage data across the PIN diode and the current data through the PIN diode are mapped to the [0, 1] interval according to their respective maximum and minimum values. The preprocessed data is input into a multilayer perceptron. The multilayer perceptron extracts and transforms features from the input data through multiple hidden layers, and predicts signal distortion data for a specified time period. Based on the prediction results, the digital predistortion processor has a built-in temperature-distortion mapping lookup table, and calls the corresponding predistortion coefficient matrix in real time according to the junction temperature data fed back by the adaptive bias compensation unit.

4. The high-speed PIN diode radio frequency switch driving system according to claim 1, characterized in that, The PIN diode RF switch integrates a 4×4 distributed NTC thermistor array near the die and along the heat dissipation path. Each thermistor has a thermal coupling distance of ≤0.1mm from the PIN diode junction and a thermal response time of ≤200μs to monitor the spatial distribution of junction temperature. Each thermistor is connected to an independent constant current source circuit to convert resistance changes into voltage signals, which are then differentially amplified by an amplifier.

5. A high-speed PIN diode radio frequency switch driving system according to claim 4, characterized in that, The adaptive bias compensation unit is equipped with a bias voltage regulation circuit. The bias voltage regulation circuit adopts a hybrid architecture of linear regulator and switched capacitor converter. The linear regulator is responsible for providing the reference voltage, and the switched capacitor converter realizes the voltage regulation. The voltage regulation range is -5V to +15V, the regulation step is 1mV, and the response time is ≤10μs.

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