Crystalline silicon cell and manufacturing method thereof

Abstract

The invention provides a crystalline silicon cell and a manufacturing method thereof, the crystalline silicon cell comprises an N-type silicon substrate, a tunneling oxide layer, an N + poly layer, AIOx / SiNx, a silver metal electrode, a P + layer and an aluminum metal electrode, and the manufacturing method of the crystalline silicon cell comprises the following operation steps: S1, double-sided cleaning and texturing: adopting an N-type silicon wafer with the size of 182.2 * 183.75, cleaning and texturing the surface of the silicon wafer with alkali, and cleaning and texturing the surface of the N-type silicon wafer with the size of 182.2 * 183.75; s2, phosphorus doping is carried out, an N + layer is formed, a thin oxide layer is deposited firstly, and then phosphorus doping is completed through a low-pressure diffusion furnace. According to the crystalline silicon cell and the manufacturing method thereof, the use amount of silver paste is reduced by about 35% through texturing, phosphorus doping, laser patterning, etching alkali polishing, boron diffusion, cleaning, atomic layer deposition, front and back anti-reflection layer preparation, silk-screen printing and laser-assisted sintering and through a cell back aluminum grid line laser induction process.

Description

Technical Field

[0001] This invention relates to the field of batteries, and more particularly to a crystalline silicon battery and its manufacturing method. Background Technology

[0002] Crystalline silicon cells are currently the most widely used type of solar cell in the photovoltaic industry. With high efficiency, mature production process and stable performance, the core of crystalline silicon cells is the pn junction.

[0003] Silver paste is a key material in photovoltaic cell manufacturing, especially since TOPCon cells use silver paste to prepare electrodes on both the front and back sides, making it a larger proportion of non-silicon costs than PERC cells. As a precious metal, silver's price fluctuates greatly and has remained high for a long time, directly affecting the price of silver paste, which in turn affects the production cost of the cells, resulting in higher production costs.

[0004] Therefore, it is necessary to provide a crystalline silicon solar cell and its manufacturing method to solve the above-mentioned technical problems. Summary of the Invention

[0005] This invention provides a crystalline silicon solar cell and its manufacturing method, which solves the problem of high production costs of current solar cells.

[0006] To solve the above-mentioned technical problems, the present invention provides a crystalline silicon solar cell and a method for manufacturing the same. The crystalline silicon solar cell includes an N-type silicon substrate, a tunneling oxide layer, an N+ poly layer, an AlOx / SiNx layer, a silver metal electrode, a P+ layer, and an aluminum metal electrode. The method for manufacturing the crystalline silicon solar cell includes the following steps:

[0007] S1: Double-sided cleaning and texturing: Using an N-type silicon wafer with a size of 182.2*183.75, the surface of the silicon wafer is cleaned and texturized with alkali to form a specific inverted pyramid structure, reducing light reflection;

[0008] S2: Phosphorus doping, forming an N+ layer. First, a thin oxide layer is deposited, and then phosphorus doping is completed using a low-pressure diffusion furnace.

[0009] S3: Laser patterning. Laser is used to pattern the grid area. Ultraviolet laser is used to form several N+poly lines on the front side. The number of lines is the same as the number of fine grids, and the width is greater than the printing width of the fine grids.

[0010] S4: Etching and alkaline polishing: Removes the residual oxide layer in the patterned area and polishes the back side. At the same time, texturing additives are added to the water tank after conventional alkaline polishing to form a micron-scale texturing structure on the tower base structure, which facilitates the subsequent diffusion of boron in the silicon base.

[0011] S5: Boron diffusion: A P+ layer is formed using a low-pressure, high-temperature boron diffusion furnace;

[0012] S6: Cleaning: Remove edge sludge and borosilicate glass;

[0013] S7: Atomic layer deposition: Deposit an aluminum oxide film of equal thickness on both the front and back sides, with an aluminum oxide thickness of 4-8 nm;

[0014] S8: Anti-reflective film preparation: Silicon nitride anti-reflective film is formed on the front and back sides. The film structure of silicon nitride on the front and back sides is different, and its overall film thickness / refractive index is also different.

[0015] S9: Electrode fabrication: The electrodes include main grids and fine grids. Both the main grids and fine grids on the front and back sides are printed in steps. Silver paste is used to print the back main grids first, followed by aluminum paste to print the back fine grid lines. Then, silver paste is used to print the front main grids in the patterned area. The width of the main grids is generally smaller than the patterned width. Finally, silver paste is used to print the front fine grids with a grid line width of 12-20μm. Finally, the electrodes undergo high-temperature sintering. Because the back side uses aluminum paste fine grid lines, the peak sintering temperature is 50-70℃ lower than that of a full silver paste cell, reducing the thermal damage to the silicon wafer caused by high temperature.

[0016] S10: While performing laser sintering on the back of the battery, the laser-induced sintering reduces the back contact resistance to below 1mΩ·cm, which can form a good ohmic contact. The laser scanning method is surface scanning, and the laser induction voltage is set to 15-20V with a power of 60-70W.

[0017] S11: After the battery is conveyed to one side between the two limiting devices by the conveying device, the conveying device stops. While the limiting device limits the battery, the battery is automatically detected by the probe. At the same time, one end of the cleaning device blows air to clean the surface of the battery, while the other end sucks up and collects the dust blown up.

[0018] Preferably, a support frame is fixedly installed on the top of the conveying device, and the limiting device is disposed inside the support frame. The limiting device includes two first telescopic members and two limiting plates. The two first telescopic members are fixedly installed on both sides of the support frame, and one side of each of the two limiting plates is fixedly installed on the output end of the two first telescopic members.

[0019] Preferably, each of the two limiting plates is provided with an adjustment device, and each of the two adjustment devices is fixedly installed with a probe.

[0020] Preferably, the adjusting device includes a sliding groove, a sliding block, and a fixing member. The sliding groove is formed inside the limiting plate, the sliding block is slidably connected to the inside of the sliding groove, and the fixing member is disposed inside the block.

[0021] Preferably, a cleaning device is provided on the top of the support frame. The cleaning device includes a collection box, a collection pipe, a filter screen, a fan, a conveying pipe, and an air outlet pipe. The collection box is fixedly installed on the top of the support frame. One end of the collection pipe is fixedly installed on one end of the collection box. The filter screen is fixedly installed inside the collection box. The fan is fixedly installed inside the collection box. One end of the conveying pipe is fixedly installed on one end of the collection box. The top of the air outlet pipe is fixedly installed on one end of the conveying pipe.

[0022] Preferably, the support frame is provided with a lifting device inside. The lifting device includes a moving slot, a moving frame, and a lifting component. The moving slot is opened inside the support frame, the moving frame is slidably connected to the inside of the moving slot, and the lifting component is fixedly installed on the top of the support frame.

[0023] Preferably, the movable frame is equipped with a cleaning device inside, the cleaning device including a cleaning roller and a rotating motor, the cleaning roller being rotatably connected to the inside of the movable frame, and the rotating motor being fixedly installed at one end of the movable frame.

[0024] Preferably, the conveying device has two moving devices inside. The output end of one moving device is fixedly installed with a storage rack, and the output end of the other moving device is fixedly installed with a moving plate. The two moving devices are used to drive the storage rack and the moving plate to move, respectively.

[0025] Preferably, a second telescopic member is fixedly installed on the top of the storage rack, and a clamping plate is fixedly installed on the output end of the second telescopic member.

[0026] Preferably, a guide device is provided on one side of the support frame. The guide device includes a guide rod and a guide block. The guide rod is fixedly installed on one side of the support frame, and the guide block is slidably connected to the surface of the guide rod.

[0027] Compared with related technologies, the crystalline silicon solar cell and its manufacturing method provided by the present invention have the following beneficial effects:

[0028] This invention provides a crystalline silicon solar cell and its manufacturing method. Through texturing, phosphorus doping, laser patterning, etching and alkaline polishing, boron diffusion, cleaning, atomic layer deposition, preparation of front and back anti-reflection layers, screen printing, and laser-assisted sintering, the amount of silver paste used is reduced by about 35% by laser-induced process on the aluminum grid lines on the back of the cell. Attached Figure Description

[0029] Figure 1 A schematic diagram of the structure of a first embodiment of a crystalline silicon solar cell and its manufacturing method provided by the present invention;

[0030] Figure 2for Figure 1 The diagram shows the structure of the limiting device.

[0031] Figure 3 for Figure 1 A cross-sectional structural diagram of the collection box shown;

[0032] Figure 4 for Figure 2 The enlarged schematic diagram of part A shown below;

[0033] Figure 5 A schematic diagram of the structure of a second embodiment of a crystalline silicon solar cell and its manufacturing method provided by the present invention;

[0034] Figure 6 This is a schematic diagram of a crystalline silicon solar cell.

[0035] The diagram labels are as follows: 1. Conveying device; 2. Support frame; 3. Limiting device; 31. First telescopic component; 32. Limiting plate; 4. Adjusting device; 41. Sliding groove; 42. Sliding block; 43. Fixing component; 5. Cleaning device; 51. Collection box; 52. Collection pipe; 53. Filter screen; 54. Fan; 55. Conveying pipe; 56. Air outlet pipe.

[0036] 6. Lifting device; 61. Moving trough; 62. Moving frame; 63. Lifting component; 7. Cleaning device; 71. Rotating motor; 72. Cleaning roller.

[0037] 8. Moving device; 10. Second telescopic component; 11. Clamping plate; 12. Moving plate; 13. Guiding device; 131. Guide rod; 132. Guide block; 14. Probe; 15. N-type silicon substrate; 16. Tunneling oxide layer; 17. N+ poly layer; 18. AIOx / SiNx; 19. Silver metal electrode; 20. P+ layer; 21. Aluminum metal electrode. Detailed Implementation

[0038] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0039] First Embodiment

[0040] Please refer to the following: Figure 1 , Figure 2 , Figure 3 and Figure 4 ,in, Figure 1 A schematic diagram of the structure of a first embodiment of a crystalline silicon solar cell and its manufacturing method provided by the present invention; Figure 2 for Figure 1 The diagram shows the structure of the limiting device. Figure 3 for Figure 1 A cross-sectional structural diagram of the collection box shown; Figure 4 for Figure 2The diagram shows an enlarged view of part A. A crystalline silicon solar cell and its manufacturing method are disclosed. The crystalline silicon solar cell includes an N-type silicon substrate 15, a tunneling oxide layer 16, an N+ poly layer 17, an AlOx / SiNx layer 18, a silver metal electrode 19, a P+ layer 20, and an aluminum metal electrode 21. The manufacturing method of the crystalline silicon solar cell includes the following steps:

[0041] S1: Double-sided cleaning and texturing: Using an N-type silicon wafer with a size of 182.2*183.75, the surface of the silicon wafer is cleaned and texturized with alkali to form a specific inverted pyramid structure, reducing light reflection;

[0042] S2: Phosphorus doping, forming an N+ layer. First, a thin oxide layer is deposited, and then phosphorus doping is completed using a low-pressure diffusion furnace.

[0043] S3: Laser patterning, using laser to pattern the grid area, using ultraviolet laser to form 172 N+poly lines on the front side, with a line width of 60±2μm;

[0044] S4: Etching and alkaline polishing: Removes the residual oxide layer in the patterned area and polishes the back side. At the same time, texturing additives are added to the water tank after conventional alkaline polishing to form a micron-scale texturing structure on the tower base structure, which facilitates the subsequent diffusion of boron in the silicon base.

[0045] S5: Boron diffusion: A P+ layer is formed using a low-pressure, high-temperature boron diffusion furnace;

[0046] S6: Cleaning: Remove edge sludge and borosilicate glass;

[0047] S7: Atomic layer deposition: Deposit an aluminum oxide film of equal thickness on both the front and back sides, with an aluminum oxide thickness of 4-8 nm;

[0048] S8: Anti-reflective film preparation: Silicon nitride anti-reflective film is formed on the front and back sides. The film structure of silicon nitride on the front and back sides is different, and its overall film thickness / refractive index is also different.

[0049] S9: Electrode fabrication: The electrodes include a main grid and a fine grid. Both the main grid and the fine grid on the front and back sides are printed in steps. Silver paste is used to print the back main grid first, followed by aluminum paste to print the back fine grid. Then, silver paste is used to print the front main grid in the patterned area. The width of the main grid is generally smaller than the patterned width. Then, silver paste is used to print the front fine grid with a grid line width of 12-20μm. Finally, it undergoes high-temperature sintering. Based on the aluminum paste fine grid line on the back side, the peak sintering temperature is 50-70℃ lower than that of a full silver paste cell, reducing the thermal damage to the silicon wafer caused by high temperature.

[0050] S10: While performing laser sintering on the back of the battery, the laser-induced sintering reduces the back contact resistance to below 1mΩ·cm, which can form a good ohmic contact. The laser scanning method is surface scanning, and the laser induction voltage is set to 15-20V with a power of 60-70W.

[0051] S11: After the battery is conveyed to one side between the two limiting devices by the conveying device, the conveying device stops. While the limiting device limits the battery, the battery is automatically detected by the probe. At the same time, one end of the cleaning device blows air to clean the surface of the battery, while the other end sucks up and collects the dust blown up.

[0052] The size of the nap should be controlled within 1-3μm.

[0053] The number of main grids can be 16, 18, or 20, with 16 in this example. Then, aluminum paste is used to print fine grid lines on the back, with 150-200 grid lines, with 200 in this example. The printing width of the fine grids is generally 60-80μm.

[0054] The battery consists of an N-type silicon substrate, a tunneling oxide layer, an N+ poly layer, an AIOx / SiNx layer, a silver metal electrode, a P+ layer, and an aluminum metal electrode.

[0055] The battery uses an N-type silicon substrate. The front side of the battery adopts a local N+poly form to reduce parasitic effects. Silver metal electrodes are printed at the local N+poly. On the back side of the battery, a P+ layer is formed by boron diffusion, and aluminum metal electrodes are printed on the back side. Then, effective contact is formed by laser-induced equipment.

[0056] The N+poly area on the front of the battery is composed of multiple designs with the same width, consistent with the number of silver grid lines. The width of the N+poly area is 50-80μm, the width of the silver grid lines is 12-20μm, and the number of lines is 140-180.

[0057] The width of the aluminum grid lines on the back of the battery is 60-80μm, and the number of lines is 150-200.

[0058] The laser-induced voltage is set to 15-20V, and the power is 60-70W.

[0059] By using a local N+poly design on the front side and a laser-induced process for aluminum grid lines on the back side, the amount of silver paste used can be reduced by about 35%, the process temperature can be reduced by 70°C, and the damage to the silicon wafer surface caused by high temperature can be reduced.

[0060] The conveying device 1 is a conveyor belt, which is used to move the products that have moved to the surface of the conveyor belt to one side after starting. After moving to the two limit plates 32, the conveyor belt automatically closes after a certain period of time and then moves and starts again to convey the next product to one side.

[0061] A support frame 2 is fixedly installed on the top of the conveying device 1. The limiting device 3 is disposed inside the support frame 2. The limiting device 3 includes two first telescopic members 31 and two limiting plates 32. The two first telescopic members 31 are fixedly installed on both sides of the support frame 2, and one side of each of the two limiting plates 32 is fixedly installed on the output end of the two first telescopic members 31.

[0062] The first telescopic component 31 consists of a cylinder, a hydraulic rod, and an electric push rod.

[0063] Both of the limiting plates 32 are equipped with adjustment devices 4 inside, and probes 14 are fixedly installed inside both of the adjustment devices 4.

[0064] The adjusting device 4 includes a sliding groove 41, a sliding block 42, and a fixing member 43. The sliding groove 41 is formed inside the limiting plate 32, the sliding block 42 is slidably connected to the inside of the sliding groove 41, and the fixing member 43 is disposed inside the block 42.

[0065] The probe 14 is fixedly installed inside the sliding block 42. By loosening the fixing piece 43, the sliding block 42 is moved to one side, thereby moving to one side inside the sliding groove 41 to adjust the position of the probe 14.

[0066] The fixing component 43 is a bolt, and the sliding block 42 has a threaded hole that matches the bolt inside. When the bolt is rotated to one side, the bolt moves inside the threaded hole. When one end of the bolt contacts the surface of the sliding groove 41, it limits the sliding block 42. When one end of the bolt separates from the inner wall of the sliding groove 41, it allows the sliding block 42 to move.

[0067] A cleaning device 5 is provided on the top of the support frame 2. The cleaning device 5 includes a collection box 51, a collection pipe 52, a filter screen 53, a fan 54, a conveying pipe 55, and an air outlet pipe 56. The collection box 51 is fixedly installed on the top of the support frame 2. One end of the collection pipe 52 is fixedly installed on one end of the collection box 51. The filter screen 53 is fixedly installed inside the collection box 51. The fan 54 is fixedly installed inside the collection box 51. One end of the conveying pipe 55 is fixedly installed on one end of the collection box 51. The top of the air outlet pipe 56 is fixedly installed on one end of the conveying pipe 55.

[0068] A suction head is fixedly installed at one end of the collection tube 52 for sucking up the blown dust.

[0069] The air outlet pipe 56 is fixedly installed on one side of the inner wall of the support frame 2. Multiple nozzles are fixedly installed on the surface of the air outlet pipe 56. The air blown by the fan 54 is transported into the air outlet pipe 56 through the conveying pipe 55 and sprayed out from the multiple nozzles to clean the surface of the product.

[0070] In use, after the product enters the conveying device 1, the conveying device 1 starts and moves the product to one side a certain distance. After the product moves between the two limiting plates 32, the two first telescopic members 31 are activated to move the two limiting plates 32 to one side, clamping the product while driving multiple probes 14 to contact the product for detection.

[0071] After the test is completed, the two first telescopic components 31 retract, causing the two limit plates 32 to reset.

[0072] At the same time, the blower 54 is started to blow air into the conveying pipe 55, so that the air outlet pipe 56 blows out more air to clean the surface of the product. Meanwhile, the collection pipe 52 generates suction to absorb the blown dust. The dust enters the inside of the collection box 51, and after being filtered by the filter screen 53, the air enters the inside of the conveying pipe 55 and is blown out through the air outlet pipe 56.

[0073] After the battery is conveyed to one side between the two limiting devices 3 by the conveying device 1, the conveying device 1 stops. While the limiting device 3 limits the battery, the probe 14 automatically detects the battery, thereby quickly and automatically detecting the battery and increasing work efficiency. At the same time, one end of the cleaning device 5 blows air to clean the surface of the battery, while the other end sucks up and collects the dust blown up.

[0074] The support frame 2 is equipped with a lifting device 6 inside. The lifting device 6 includes a moving groove 61, a moving frame 62, and a lifting component 63. The moving groove 61 is opened inside the support frame 2. The moving frame 62 is slidably connected to the inside of the moving groove 61. The lifting component 63 is fixedly installed on the top of the support frame 2.

[0075] The lifting component 63 is fixedly installed on the top of the support frame 2 and is used to push the movable frame 62 to move.

[0076] The lifting component 63 consists of a cylinder, a hydraulic rod, and an electric push rod.

[0077] The movable frame 62 is equipped with a cleaning device 7, which includes a cleaning roller 72 and a rotating motor 71. The cleaning roller 72 is rotatably connected to the inside of the movable frame 62, and the rotating motor 71 is fixedly installed at one end of the movable frame 62.

[0078] The rotating motor 71 is a servo motor, and its output end is connected to one end of the cleaning roller 72 via a coupling to rotate.

[0079] In use, the cleaning roller 72 is rotated to one side by starting the rotating motor 71 to clean the surface of the product.

[0080] By activating the lifting component 63, the moving frame 62 moves inside the moving groove 61, thereby adjusting the height of the cleaning roller 72.

[0081] The working principle of the crystalline silicon solar cell and its manufacturing method provided by this invention is as follows:

[0082] When using it, firstly, double-sided cleaning and texturing are performed: using an N-type silicon wafer with a size of 182.2*183.75, the surface of the silicon wafer is cleaned and texturized with alkali to form a specific groove structure to reduce light reflection;

[0083] Phosphorus doping forms an N+ layer by first depositing a thin oxide layer and then using a low-pressure diffusion furnace to complete the phosphorus doping.

[0084] Laser patterning: Laser is used to pattern the grid area. Ultraviolet laser is used to form several N+poly lines on the front side, the number of which is consistent with the number of fine grids.

[0085] Etching and alkaline polishing: Removes the residual oxide layer in the patterned area and polishes the back side. At the same time, texturing additives are added to the water tank after conventional alkaline polishing to form a micron-scale texturing structure on the tower base structure, which facilitates the subsequent diffusion of boron in the silicon base.

[0086] Boron diffusion: A P+ layer is formed using a low-pressure, high-temperature boron diffusion furnace;

[0087] Cleaning: Remove edge slack and borosilicate glass;

[0088] Atomic layer deposition: Depositing an aluminum oxide film of equal thickness on both the front and back sides, with an aluminum oxide thickness of 4-8 nm;

[0089] Anti-reflective coating preparation: Silicon nitride anti-reflective coatings are formed on the front and back sides. The film structures of the silicon nitride on the front and back sides are different, and their overall film thickness / refractive index is also different.

[0090] Electrode fabrication: The electrodes include a main grid and a fine grid. Both the main grid and the fine grid on the front and back sides are printed in steps. Silver paste is used to print the back main grid first, followed by aluminum paste to print the back fine grid. Then, silver paste is used to print the front main grid in the patterned area. The width of the main grid is generally smaller than the patterned width. Then, silver paste is used to print the front fine grid with a grid line width of 12-20μm. Finally, the electrodes undergo high-temperature sintering. Because the back side has aluminum paste fine grid lines, the peak sintering temperature is 50-70℃ lower than that of a full silver paste cell, reducing the thermal damage to the silicon wafer caused by high temperature.

[0091] While performing laser sintering on the back of the battery, the laser-induced sintering reduces the back contact resistance to below 1mΩ·cm, which can form a good ohmic contact. The laser scanning method is surface scanning, and the laser induction voltage is set to 15-20V and the power is 60-70W.

[0092] After the battery is conveyed to one side between the two limiting devices by the conveying device, the conveying device stops. While the limiting devices limit the battery, the battery is automatically detected by the probe. At the same time, one end of the cleaning device blows air to clean the surface of the battery, while the other end sucks up and collects the dust blown up.

[0093] Compared with related technologies, the crystalline silicon solar cell and its manufacturing method provided by the present invention have the following beneficial effects:

[0094] This invention provides a crystalline silicon solar cell and its manufacturing method. Through texturing, phosphorus doping, laser patterning, etching and alkaline polishing, boron diffusion, cleaning, atomic layer deposition, preparation of front and back anti-reflection layers, screen printing, and laser-assisted sintering, the method achieves a reduction of about 35% in silver paste usage and a reduction of 70°C in process temperature by using laser-induced process on the aluminum grid lines on the back of the cell, thereby reducing high-temperature damage to the silicon wafer surface.

[0095] Second Embodiment

[0096] Please refer to the following: Figure 5 Based on the crystalline silicon solar cell and its manufacturing method provided in the first embodiment of this application, the second embodiment of this application proposes another crystalline silicon solar cell and its manufacturing method. The second embodiment is merely a preferred embodiment of the first embodiment, and the implementation of the second embodiment will not affect the separate implementation of the first embodiment.

[0097] Specifically, the second embodiment of this application provides a crystalline silicon battery and its manufacturing method that differ in that, in the crystalline silicon battery and its manufacturing method, the conveying device 1 is provided with two moving devices 8 inside, the output end of the moving device 8 is fixedly installed with a storage rack 9, and the output end of the other moving device 8 is fixedly installed with a moving plate 12. The two moving devices 8 are respectively used to drive the storage rack 9 and the moving plate 12 to move.

[0098] The moving device 8 includes a rotating groove, which is opened inside the conveying device 1. A threaded rod is rotatably connected inside the rotating groove. A servo motor is fixedly installed on one side of the conveying device 1. The output end of the servo motor is connected to one end of the threaded rod through a coupling. A rotating block is threadedly connected to the surface of the threaded rod. The top of the rotating block is fixedly connected to one end of the bottom of the moving plate 12. This is used to drive the threaded rod to rotate to one side after the servo motor is started, so that the rotating block drives the moving plate 12 to move to one side.

[0099] The rotating groove is a rectangular groove, and the rotating block is a rectangular block that fits the rotating groove.

[0100] The moving device 8 can also be a hydraulic rod, an electric push rod, a cylinder, or a linear sliding module, used to activate the storage rack 9 and the moving plate 12 to move respectively.

[0101] A second telescopic member 10 is fixedly installed on the top of the storage rack 9, and a clamping plate 11 is fixedly installed on the output end of the second telescopic member 10.

[0102] The second telescopic component 10 is a hydraulic rod, an electric push rod, or a cylinder, which is used to push the clamping plate 11 downward after activation, thereby clamping the storage box placed inside the storage rack 9.

[0103] The storage box has multiple partitions fixedly installed inside to divide the interior into multiple layers, thus facilitating the storage of products.

[0104] A guide device 13 is provided on one side of the support frame 2. The guide device 13 includes a guide rod 131 and a guide block 132. The guide rod 131 is fixedly installed on one side of the support frame 2, and the guide block 132 is slidably connected to the surface of the guide rod 131.

[0105] The bottom of the guide block 132 is fixedly connected to the top of the movable plate 12. When the movable plate 12 moves to one side, it drives the guide block 132 to move to one side on the surface of the guide rod 131, thereby increasing the stability of the movable plate 12 when it moves.

[0106] The working principle of the crystalline silicon solar cell and its manufacturing method provided by this invention is as follows:

[0107] In use, after the product has been inspected, it is moved to one side of the moving plate 12. The moving device 8 is then activated to move the moving plate 12 to one side, thereby pushing the product to move to one side and into the storage box placed inside the storage rack 9 for storage. At this time, the moving device 8 drives the moving plate 12 to reset.

[0108] At the same time, another moving device 8 moves the storage rack 9 downwards by the distance of one product, so that the next product can be normally entered into the storage rack 9 for storage.

[0109] Compared with related technologies, the crystalline silicon solar cell and its manufacturing method provided by the present invention have the following beneficial effects:

[0110] This invention provides a crystalline silicon battery and its manufacturing method. By using a moving device 8 in conjunction with a storage rack 9 and a moving plate 12, the tested products are moved to one side and placed inside the storage frame inside the storage rack 9, thereby automatically storing the products.

[0111] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A crystalline silicon solar cell and its manufacturing method, characterized in that, The crystalline silicon solar cell comprises an N-type silicon substrate, a tunneling oxide layer, an N+ poly layer, an AIOx / SiNx layer, a silver metal electrode, a P+ layer, and an aluminum metal electrode. The manufacturing method of the crystalline silicon solar cell includes the following steps: S1: Double-sided cleaning and texturing: Using an N-type silicon wafer with a size of 182.2*183.75, the surface of the silicon wafer is cleaned and texturized with alkali to form a specific inverted pyramid structure, reducing light reflection; S2: Phosphorus doping, forming an N+ layer. First, a thin oxide layer is deposited, and then phosphorus doping is completed using a low-pressure diffusion furnace. S3: Laser patterning, using laser to pattern the grid area, using ultraviolet laser to form several N+poly lines on the front side, the number of which is consistent with the number of fine grids; S4: Etching and alkaline polishing: Removes the residual oxide layer in the patterned area and polishes the back side. At the same time, a texturing additive is added to the water tank after the conventional alkaline polishing to form a micron-scale texturing structure on the tower base structure, which facilitates the subsequent diffusion of boron into the silicon substrate. S5: Boron diffusion: A P+ layer is formed using a low-pressure, high-temperature boron diffusion furnace; S6: Cleaning: Remove edge sludge and borosilicate glass; S7: Atomic layer deposition: Deposit an aluminum oxide film of equal thickness on both the front and back sides, with an aluminum oxide thickness of 4-8 nm; S8: Anti-reflective film preparation: Silicon nitride anti-reflective film is formed on the front and back sides. The film structure of silicon nitride on the front and back sides is different, and its overall film thickness / refractive index is also different. S9: Electrode fabrication: The electrodes include main grids and fine grids. Both the main grids and fine grids on the front and back sides are printed in steps. Silver paste is used to print the back main grids first, followed by aluminum paste to print the back fine grid lines. Then, silver paste is used to print the front main grids in the patterned area. The width of the main grids is generally smaller than the patterned width. Then, silver paste is used to print the front fine grids with a grid line width of 12-20μm. Finally, the electrodes undergo high-temperature sintering. Since the back side uses aluminum paste fine grid lines, aluminum paste is easy to widen at high temperatures. The peak sintering temperature is 50-70℃ lower than that of all-silver paste cells, reducing the thermal damage to the silicon wafer caused by high temperatures. S10: While performing laser sintering on the back of the battery, the laser-induced sintering reduces the back contact resistance to below 1mΩ·cm, which can form a good ohmic contact. The laser scanning method is surface scanning, and the laser induction voltage is set to 15-20V with a power of 60-70W. S11: After the battery is conveyed to one side between the two limiting devices by the conveying device, the conveying device stops. While the limiting device limits the battery, the battery is automatically detected by the probe. At the same time, one end of the cleaning device blows air to clean the surface of the battery, while the other end sucks up and collects the dust blown up.

2. The crystalline silicon solar cell and its manufacturing method according to claim 1, characterized in that, A support frame is fixedly installed on the top of the conveying device. The limiting device is located inside the support frame. The limiting device includes two first telescopic members and two limiting plates. The two first telescopic members are fixedly installed on both sides of the support frame, and one side of each of the two limiting plates is fixedly installed on the output end of the two first telescopic members.

3. The crystalline silicon solar cell and its manufacturing method according to claim 2, characterized in that, Both of the limiting plates are equipped with adjustment devices inside, and probes are fixedly installed inside both adjustment devices.

4. The crystalline silicon solar cell and its manufacturing method according to claim 3, characterized in that, The adjusting device includes a sliding groove, a sliding block, and a fixing member. The sliding groove is formed inside the limiting plate, the sliding block is slidably connected to the inside of the sliding groove, and the fixing member is disposed inside the block.

5. A crystalline silicon solar cell and its manufacturing method according to claim 2, characterized in that, A cleaning device is provided on the top of the support frame. The cleaning device includes a collection box, a collection pipe, a filter screen, a fan, a conveying pipe, and an air outlet pipe. The collection box is fixedly installed on the top of the support frame. One end of the collection pipe is fixedly installed on one end of the collection box. The filter screen is fixedly installed inside the collection box. The fan is fixedly installed inside the collection box. One end of the conveying pipe is fixedly installed on one end of the collection box. The top of the air outlet pipe is fixedly installed on one end of the conveying pipe.

6. A crystalline silicon solar cell and its manufacturing method according to claim 5, characterized in that, The support frame is equipped with a lifting device, which includes a moving slot, a moving frame, and a lifting component. The moving slot is opened inside the support frame, the moving frame is slidably connected to the inside of the moving slot, and the lifting component is fixedly installed on the top of the support frame.

7. A crystalline silicon solar cell and its manufacturing method according to claim 6, characterized in that, The mobile frame is equipped with a cleaning device, which includes a cleaning roller and a rotating motor. The cleaning roller is rotatably connected to the inside of the mobile frame, and the rotating motor is fixedly installed at one end of the mobile frame.

8. A crystalline silicon solar cell and its manufacturing method according to claim 2, characterized in that, The conveying device has two moving devices inside. The output end of one moving device is fixedly installed with a storage rack, and the output end of the other moving device is fixedly installed with a moving plate. The two moving devices are used to drive the storage rack and the moving plate to move, respectively.

9. A crystalline silicon solar cell and its manufacturing method according to claim 8, characterized in that, A second telescopic component is fixedly installed on the top of the storage rack, and a clamping plate is fixedly installed on the output end of the second telescopic component.

10. A crystalline silicon solar cell and its manufacturing method according to claim 2, characterized in that, A guide device is provided on one side of the support frame. The guide device includes a guide rod and a guide block. The guide rod is fixedly installed on one side of the support frame, and the guide block is slidably connected to the surface of the guide rod.

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